JP6450402B2 - カウンターウエイトを用いたスパッタリングシステム及びスパッタリング方法 - Google Patents
カウンターウエイトを用いたスパッタリングシステム及びスパッタリング方法 Download PDFInfo
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- JP6450402B2 JP6450402B2 JP2016570913A JP2016570913A JP6450402B2 JP 6450402 B2 JP6450402 B2 JP 6450402B2 JP 2016570913 A JP2016570913 A JP 2016570913A JP 2016570913 A JP2016570913 A JP 2016570913A JP 6450402 B2 JP6450402 B2 JP 6450402B2
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
- H01J37/32761—Continuous moving
- H01J37/32779—Continuous moving of batches of workpieces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3435—Target holders (includes backing plates and endblocks)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
- H01J37/3455—Movable magnets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3464—Operating strategies
- H01J37/347—Thickness uniformity of coated layers or desired profile of target erosion
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
本願は、2012年11月2日に出願の「線走査スパッタリングシステム及び線走査スパッタリング方法」という発明の名称である米国特許出願第13/667,976号の一部継続出願であり、該米国特許出願は2011年11月4日に出願の米国仮特許出願第61/556,154号の優先権を主張しており、それらの開示全体が言及により本明細書に組み込まれる。
本願は、集積回路、太陽電池、フラットパネルディスプレイ等の製造時に薄膜を基板に堆積させるために使用されるスパッタリングシステムなどの、スパッタリングシステムに関する。
Claims (16)
- 材料をターゲットから基板に堆積させるためのシステムであって、
処理チャンバと、
長さLであって、その前面にスパッタリング材料を備えたスパッタリングターゲットと、
前記ターゲットの背面近くで前記長さLを往復して走査するように動作可能な磁石と、
前記磁石と同じ速度だが反対方向に往復して走査するように動作可能なカウンターウエイトと、
前記磁石と前記カウンターウエイトとが機械的に連結された動力素子と、
前記動力素子と連結されたモータと、
前記モータを動作させる信号を送信するように構成されたコントローラと、を含み、
前記コントローラは前記モータに信号を送信して、前記ターゲットの反対の端部における転向帯域で前記磁石の方向を反転させるように構成され、前記転向帯域のそれぞれにおける後続の反転は異なる位置でおこなわれる、システム。 - 前記磁石と前記カウンターウエイトとが連結された直線軌道をさらに含み、前記磁石と前記カウンターウエイトとは前記直線軌道に沿って自在に摺動可能である、請求項1に記載のシステム。
- 前記動力素子は可変張力素子を含む、請求項1に記載のシステム。
- 前記動力素子はベルト、タイミングベルト、又はチェーンのうちの1つを含む、請求項1に記載のシステム。
- 前記コントローラは前記モータに信号を送信して、連続的な走査における上流又は下流への進行方向に沿って漸増的に移動する位置で方向を反転させることで、前記磁石を前記長さLに沿って走査させるように構成される、請求項1に記載のシステム。
- 前記コントローラは前記モータに信号を送信して、前記磁石について、
上流方向に距離Xの走査をおこない、次に方向を反転して、下流方向に距離Yの走査をおこない、これらを繰り返すことと、
前記ターゲットの端部に達すると、下流方向に距離Xの走査をおこない、次に方向を反転して、上流方向に距離Yの走査をおこない、これらを繰り返すこととによって、
前記長さLに沿って繰り返して走査させるように構成され、
XはYより長く、XはLより短い、請求項1に記載のシステム。 - XとYとの少なくとも1つは定数である、請求項6に記載のシステム。
- 距離|X|−|Y|は一定に保たれる、請求項6に記載のシステム。
- ピッチPで配列された少なくとも1列の基板を搬送するように構成されたコンベアベルトをさらに含み、LはPよりも数倍長い、請求項1に記載のシステム。
- 前記コンベアベルトは、前記磁石が前記長さLに沿って繰り返して走査される間、連続的に動作する、請求項9に記載のシステム。
- 前記磁石は、200mm/秒を超える平均速度で前記長さLを往復して走査されるように動作可能である、請求項1に記載のシステム。
- 前記磁石は、少なくとも4gの減速度及び加速度で前記長さLを往復して走査されるように動作可能である、請求項1に記載のシステム。
- 前記減速度の大きさは前記加速度の大きさと異なる、請求項12に記載のシステム。
- 前記コントローラは、前記磁石の上流への走査時と下流への走査時とで、前記ターゲットに異なる電力レベルを印加する、請求項1に記載のシステム。
- 前記ターゲットに、前記下流への走査全体で送達される全電力は、前記上流への走査全体で前記ターゲットに送達される全電力と等しい、請求項14に記載のシステム。
- 前記コンベアは、連続する複数列をなした複数の前記基板を搬送する、請求項10に記載のシステム。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/185,867 US20140332376A1 (en) | 2011-11-04 | 2014-02-20 | Sputtering system and method using counterweight |
US14/185,867 | 2014-02-20 | ||
PCT/US2015/016611 WO2015127074A1 (en) | 2014-02-20 | 2015-02-19 | Sputtering system and method using counterweight |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017510714A JP2017510714A (ja) | 2017-04-13 |
JP6450402B2 true JP6450402B2 (ja) | 2019-01-09 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2016570913A Expired - Fee Related JP6450402B2 (ja) | 2014-02-20 | 2015-02-19 | カウンターウエイトを用いたスパッタリングシステム及びスパッタリング方法 |
Country Status (8)
Country | Link |
---|---|
EP (1) | EP3108028B1 (ja) |
JP (1) | JP6450402B2 (ja) |
KR (1) | KR102327285B1 (ja) |
CN (1) | CN107087418B (ja) |
MY (1) | MY192713A (ja) |
SG (1) | SG11201606928VA (ja) |
TW (1) | TW201546308A (ja) |
WO (1) | WO2015127074A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10106883B2 (en) | 2011-11-04 | 2018-10-23 | Intevac, Inc. | Sputtering system and method using direction-dependent scan speed or power |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59103757U (ja) * | 1982-12-27 | 1984-07-12 | 株式会社徳田製作所 | スパツタリング装置 |
JPS6134177A (ja) * | 1984-07-25 | 1986-02-18 | Tokuda Seisakusho Ltd | マグネツト駆動装置 |
JP3514488B2 (ja) * | 1993-06-30 | 2004-03-31 | 株式会社アルバック | マグネトロンスパッタ方法及び装置 |
US6464841B1 (en) * | 1997-03-04 | 2002-10-15 | Tokyo Electron Limited | Cathode having variable magnet configuration |
US6485616B1 (en) * | 1999-12-29 | 2002-11-26 | Deposition Sciences, Inc. | System and method for coating substrates with improved capacity and uniformity |
WO2002047110A1 (en) * | 2000-12-05 | 2002-06-13 | Trikon Holdings Limited | Magnetron sputtering apparatus |
EP1486824A1 (en) * | 2003-06-11 | 2004-12-15 | ASML Netherlands B.V. | A movable stage system for in a lithographic projection apparatus, lithographic projection apparatus and device manufacturing method |
JP4384109B2 (ja) * | 2005-01-05 | 2009-12-16 | 三星モバイルディスプレイ株式會社 | 蒸着システム用蒸着源の駆動軸及びこれを具備した蒸着システム |
JP4657183B2 (ja) * | 2006-09-28 | 2011-03-23 | 株式会社アルバック | スパッタリング装置、スパッタリング方法 |
DE502006008952D1 (de) * | 2006-11-14 | 2011-04-07 | Applied Materials Inc | Magnetron-Sputterquelle, Sputter-Beschichtungsanlage und Verfahren zur Beschichtung eines Substrats |
US20100294649A1 (en) * | 2008-01-21 | 2010-11-25 | Ulvac, Inc. | Sputtering film forming method and sputtering film forming apparatus |
CN101570274B (zh) * | 2008-04-30 | 2011-04-13 | 中国恩菲工程技术有限公司 | 带式输送机 |
CN101988189B (zh) * | 2009-08-07 | 2012-10-10 | 鸿富锦精密工业(深圳)有限公司 | 磁控溅射靶及采用该磁控溅射靶的磁控溅射装置 |
TWI589717B (zh) * | 2011-11-03 | 2017-07-01 | 海帝斯科技公司 | 使用濺射裝置的濺射方法 |
US20140332376A1 (en) * | 2011-11-04 | 2014-11-13 | Intevac, Inc. | Sputtering system and method using counterweight |
WO2013109333A2 (en) * | 2011-11-04 | 2013-07-25 | Intevac, Inc. | Linear scanning sputtering system and method |
US9093252B2 (en) * | 2012-02-16 | 2015-07-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Rotation plus vibration magnet for magnetron sputtering apparatus |
-
2015
- 2015-02-19 JP JP2016570913A patent/JP6450402B2/ja not_active Expired - Fee Related
- 2015-02-19 EP EP15752686.4A patent/EP3108028B1/en active Active
- 2015-02-19 KR KR1020167025335A patent/KR102327285B1/ko active IP Right Grant
- 2015-02-19 WO PCT/US2015/016611 patent/WO2015127074A1/en active Application Filing
- 2015-02-19 MY MYPI2016703036A patent/MY192713A/en unknown
- 2015-02-19 SG SG11201606928VA patent/SG11201606928VA/en unknown
- 2015-02-19 CN CN201580017460.8A patent/CN107087418B/zh active Active
- 2015-02-24 TW TW104105773A patent/TW201546308A/zh unknown
Also Published As
Publication number | Publication date |
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EP3108028A4 (en) | 2017-08-23 |
JP2017510714A (ja) | 2017-04-13 |
WO2015127074A1 (en) | 2015-08-27 |
TW201546308A (zh) | 2015-12-16 |
CN107087418A (zh) | 2017-08-22 |
SG11201606928VA (en) | 2016-09-29 |
EP3108028B1 (en) | 2020-04-08 |
KR20160142287A (ko) | 2016-12-12 |
KR102327285B1 (ko) | 2021-11-16 |
MY192713A (en) | 2022-09-05 |
EP3108028A1 (en) | 2016-12-28 |
CN107087418B (zh) | 2020-09-29 |
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