JP6437844B2 - Channel member, heat exchanger using the same, and semiconductor manufacturing apparatus - Google Patents

Description

  The present invention relates to a flow path member, a heat exchanger using the same, and a semiconductor manufacturing apparatus.

  Conventionally, a channel member having a channel inside has been proposed as a member for performing heat exchange. In such a flow path member, by flowing a fluid through the flow path, heat exchange is performed between the flow path member and another member that is in contact with the flow path member or a medium around the flow path member, and is in contact with the flow path member. The temperature of the medium around other members and flow path members can be adjusted.

  As such a flow path member, for example, Patent Document 1 discloses a flow path member having unevenness extending along a direction in which a fluid flows in a part of a surface forming a flow path.

JP2013-48204A

  At present, there are various demands on the flow path member, such as those having a complicated flow path shape and a larger flow path member, but any flow path member is required to improve heat exchange performance.

  Therefore, an object of the present invention is to provide a flow path member having a simpler configuration and improved heat exchange performance, a heat exchanger using the same, and a semiconductor manufacturing apparatus.

The flow path member of the present invention is a flow path member made of ceramics, having a lid part, a bottom plate part, a side wall part, and a partition part, and a space surrounded by each part serves as a fluid flow path. In addition, a barrier portion is provided on at least one of the one end and the other end of the partition portion .
Further, the flow path member of the present invention is made of ceramics, has a lid part, a side wall part, a bottom plate part, and a partition part, and a flow path member in which a space surrounded by each part serves as a fluid flow path. The channel is a folded channel structure, and a barrier portion is provided at an end of the partition wall adjacent to the folded portion.

  The heat exchanger of the present invention is characterized in that a metal member is provided on the surface or inside of the lid portion of the flow path member having the above configuration.

  Furthermore, the semiconductor manufacturing apparatus of the present invention includes a heat exchanger in which a metal member is provided inside the lid portion of the flow path member having the above configuration.

  The flow path member of the present invention can be a flow path member with improved heat exchange performance. Furthermore, by providing this flow path member, it is possible to provide a heat exchanger and a semiconductor manufacturing apparatus with improved heat exchange performance.

(A) which shows an example of the flow-path member of this embodiment is a perspective view, (b) is AA sectional drawing shown by (a). It is sectional drawing which shows another example of the flow-path member of this embodiment. It is a perspective view which shows an example of the heat exchanger of this embodiment. It is the schematic which shows an example of the whole system configuration | structure of a semiconductor manufacturing apparatus provided with the heat exchanger of this embodiment.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

  1A and 1B show an example of a flow path member of the present embodiment, in which FIG. 1A is a perspective view and FIG. 1B is a cross-sectional view taken along line AA shown in FIG. In the following description, the same components are described using the same reference numerals.

  A flow path member 1 of the present embodiment shown in FIG. 1 is made of ceramics, has a lid part 2, a side wall part 3, a bottom plate part 4, and a partition wall part 7, and a space surrounded by each part is a fluid. It becomes a flow path. In addition, although it is preferable that the upper end in the partition part 7 is connected to the cover body part 2, and the lower end is connected to the baseplate part 4, it is not necessarily the limitation.

  In addition, in the flow path member 1 shown in FIG. 1A, an example in which the fluid inlet 5 and the outlet 6 are provided in the lid body 2 and the inlet 5 is provided on the corner side is shown. However, the locations of the inlet 5 and the outlet 6 are not limited to this.

  Here, the flow path provided in the flow path member 1 shown in FIG. 1 includes an inlet-side flow path 10 that is a flow path on the inlet 5 side, an outlet-side flow path 11 that is a flow path on the outlet 6 side, and these And a connecting flow path 9 delimited by the partition wall 7.

  In the flow path member 1 shown in FIG. 1, the fluid flows from the inlet 5 so as to spread through the inlet-side flow path 10 in the width direction of the flow path member 1. Subsequently, the fluid that has flowed through the inlet-side flow path 10 flows along the longitudinal direction of the flow path member 1 through each connection flow path 9 partitioned by the partition wall portion 7, and the fluid that has flowed through each connection flow path 9 is After flowing into the outlet-side channel 11, it is discharged to the outside from the outlet 6.

  And in the flow-path member 1 of this embodiment, the barrier part 8 is provided in the change area | region C where the flow direction of a fluid changes, as shown with a broken line in FIG.1 (b). Here, the change region C is a portion where the flow direction changes by abutting against the side wall portion 3 in the fluid flow direction.

  The flow path member having the lid body part 2, the side wall part 3, the bottom plate part 4, and the partition wall part 7 and in which the space surrounded by each part serves as a fluid flow path does not have the barrier part 8. In this case, there is a problem that the fluid tends to stay in the change region C. However, as in the flow path member 1 of the present embodiment shown in FIG. 1, the barrier region 8 is provided in the change region C where the fluid flow direction changes. Since the fluid stays in the change region C can be suppressed, the flow path member 1 with improved heat exchange performance can be obtained.

  This is specifically described below. First, on the inflow port 5 side, the inflow port 5 is provided at a position on the upper side of the flow path member 1 having the configuration shown in FIG. Although there is a possibility that the fluid stays in C1, the provision of the attached barrier portion 8b makes it easier for the fluid to flow, and the stay in the change region C1 can be suppressed. In addition, in the flow path member 1 having the configuration shown in FIG. 1B, an example in which one end of the partition wall portion 7 farthest from the inflow port 5 protrudes toward the inlet side flow channel 10 side than one end of the other partition wall portion 7. However, it is not always necessary to project, and the positions of one end of all the partition walls 7 may be the same position.

In addition, on the outlet 6 side, the outlet 6 is provided in the central portion in the width direction of the flow path member 1, so that there is a possibility that fluid stays in the change region C corresponding to both corners on the outlet side flow path 11 side. However, in one change region C2, the retention of the fluid in the change region C2 of the outlet side channel 11 can be suppressed by including the independent barrier portion 8a. Moreover, in the other change area C3, the retention of the fluid in the change area C3 of the outlet side flow path 11 can be suppressed by providing the attached barrier portion 8b.

  The independent barrier portion 8 a is located in the vicinity of the side wall portion 3 and the partition wall portion 7 but is not in contact with the side wall portion 3 and the partition wall portion 7. The attached barrier portion 8b is a portion that is attached to the end portion of the partition wall portion 7 and swells. Furthermore, when the shape of the partition wall portion 7 is not only a straight line as shown in FIG. 1B, but is bent in the change region C, the bent portion corresponds to the end portion of the partition wall portion 7.

  Further, in order to efficiently flow the fluid to the change region C, it is preferable that the barrier portion 8 has a curved portion in a cross-sectional view parallel to the main surface of the lid body portion 2, and is particularly circular. Is preferred. In addition, a curved part is a site | part which hits the side surface of the barrier part 8, and when the barrier part 8 has a curved part, there is little stress when a fluid spreads along a side surface, and the fluid in the change area C is Since it becomes easier to flow, the retention of fluid in the change region C can be further suppressed. Moreover, when the barrier part 8 has a curved part, even if the pressure (water pressure) of the fluid is high, the pressure can be efficiently reduced, and the damage to the barrier part 8 is suppressed. be able to.

  Further, from the viewpoint of suppressing this breakage, since the pressure of the fluid in the vicinity of the inlet 5 is the highest, the barrier portion 8 can be provided at one end of the partition wall portion 7 at the position closest to the inlet 5. Thereby, since the pressure can be relieved at one end of the partition wall portion 7 to which pressure is most applied, the flow path member 1 with improved reliability can be obtained.

  Further, as will be described later, when the partition wall portion 7 having the attached barrier portion 8b at the end portion is formed of a ceramic laminate, the bonding area of each layer can be increased, so that the bonding of each layer is strengthened. be able to.

  Furthermore, according to the position where the inflow port 5 or the outflow port 6 is provided, the interval between the partition walls 7 can be appropriately adjusted. For example, when the inflow port 5 and the outflow port 6 are provided on one end side in the width direction of the flow path member 1, the interval between the partition wall portions 7 on the inflow port 5 side and the outflow port 6 side is narrowed. The interval between the partition walls 7 on the other end side in the width direction can be increased. Thereby, the amount of fluid flowing at a position far from the inlet 5 and the outlet 6 where the stagnation tends to occur can be increased, and the stagnation can be suppressed.

  By the way, in the flow path member having a plurality of partition walls 7, when the barrier section 8 is provided at one end or the other end of the adjacent partition walls 7, the width of the flow path between the barrier sections 8 is shortened, thereby causing pressure loss. May occur, and the flow of fluid may deteriorate.

  Therefore, in the flow path member including the plurality of partition walls 7, when the barrier portion 8 is provided on the partition wall 7, when the length of the partition wall 7 including the barrier portion 8 is the same, the barrier portion 8 is provided at one end. It can be set as the structure which arranges the partition part 7 which has and the partition part 7 which has the barrier part 8 in an other end alternately. Further, the length of the partition wall portion 7 including the barrier portion 8 may be varied, and the position of the barrier portion 8 may be shifted as a configuration in which long and short portions are alternately arranged.

  In setting the barrier portion 8, the size and shape of the barrier portion 8 may be taken into consideration, and the barrier portion 8 may be set appropriately in consideration of the effect of pressure loss due to a reduction in the width of the flow path between the barrier portions 8.

  FIG. 2 is a cross-sectional view showing another example of the flow path member of the present embodiment.

  The flow path member 12 shown in FIG. 2A and the flow path member 13 shown in FIG. 2B are different from the flow path member 1 shown in FIG. 1 in that the flow path has a folded structure. .

  In the flow path members 12 and 13 having such a folded flow path structure, the folded portion of the flow path is a portion where the fluid tends to stay in the change region, but the partition wall portion close to the folded portion. Since the attached barrier portion 8b is provided at the end of 7, the fluid can easily flow, the retention of the fluid in the change region can be suppressed, and the heat exchange performance can be improved. In addition, the partition part 7 is not restricted to a linear thing as shown to Fig.2 (a), You may curve as shown to FIG.2 (b).

  Up to this point, the flow channel member 1 having the configuration shown in FIG. 1, the flow channel member 12 having the configuration shown in FIG. 2A, and the flow channel member 13 having the configuration shown in FIG. 2B have been shown. For the sake of simplicity, this will be described as “channel member 1”.

  The ceramic material constituting the flow path member 1 may be alumina, zirconia, mullite, silicon carbide, boron carbide, cordierite, silicon nitride, aluminum nitride, or a composite material thereof. A semiconductor device having improved heat exchange performance by forming the lid portion 2 from a ceramic material, forming a metal member such as a wiring conductor on the surface of the lid portion 2 and mounting an electronic component on the metal member. Can be configured.

  Hereinafter, an example of a method for manufacturing the flow path member 1 of the present embodiment will be described.

First, when the flow path member 1 is made of alumina, aluminum oxide (Al ₂ O ₃ ) powder having an average particle diameter of about 1.4 to 1.8 μm, silicon oxide (SiO ₂ ) powder, and oxidation A calcium (CaO) powder and a magnesium oxide (MgO) powder are prepared. Each powder is, for example, 100% by mass of aluminum oxide powder, 0.5% by mass to 2.5% by mass of silicon oxide powder, and 0.1% by mass to 0.00% of calcium oxide powder. 6% by mass or less and magnesium oxide powder are weighed and mixed so as to be 0.5% by mass or more and 1.5% by mass or less.

  Next, together with this mixed powder, a binder such as polyethylene glycol, polyvinyl alcohol, polyethylene glycol, acrylic resin or butyral resin, water, and a dispersing agent are put in a ball mill, a rotating mill, a vibration mill, a bead mill, etc. Mix with pure alumina balls to obtain a slurry. Here, the amount of the binder added may be such that the strength and flexibility of the molded product are good and that the binder is not sufficiently degreased during firing.

  When the flow path member 1 is made of silicon carbide, a silicon carbide powder having a purity of 90% or more and an average particle size of 0.5 μm or more and 2 μm or less, and boron carbide and carboxylate powder are used. prepare. Each powder is, for example, 0.12 to 1.4% by mass of boron carbide powder and 1 to 3.4% of carboxylate powder with respect to 100% by mass of silicon carbide powder. Weigh and mix so as to be less than mass%.

  Next, together with this mixed powder, a binder such as polyvinyl alcohol, polyethylene glycol, acrylic resin or butyral resin, water, and a dispersing agent are put in a ball mill, a rotating mill, a vibration mill, a bead mill or the like and mixed to obtain a slurry. obtain. Here, the amount of the binder added may be such that the strength and flexibility of the molded product are good and that the binder is not sufficiently degreased during firing.

And the obtained slurry is spray-dried by a spray granulation method (spray dry method) and granulated to obtain a granule raw material.

  Next, a method for obtaining a molded body by an isostatic press molding method (rubber press method) will be described. An organic member having the shape of the flow path formed in each flow path member 1 while the primary raw material that has been spray-dried and granulated is charged into a rubber mold having a predetermined shape, while all the primary raw materials are being charged. Then, the raw material for granules is added, and the rubber mold is sealed. Here, as a material of the organic member, for example, acrylic or α-methylstyrene having good thermal decomposability can be used. And it shape | molds by an isostatic press molding method, Then, it removes from a rubber type | mold and obtains the molded object which included the organic member.

  In addition, after obtaining the bulk-shaped molded body by the hydrostatic pressure press molding method, the molded body having a desired shape is formed by cutting so that the side wall portion 3, the bottom plate portion 4, and the partition wall portion 7 are formed. You may join the molded object used as the cover part 2 obtained by the isostatic pressing method using a slurry. Moreover, what is necessary is just to process the inflow port 5 and the outflow port 6 using a drill.

  And the degreased body is obtained by heat-treating the obtained molded body at a temperature of 400 ° C. or higher and 550 ° C. or lower for degreasing. Here, when the organic member is included in the molded body, it is preferable to perform degreasing after forming a hole connected to the organic member in order to promote thermal decomposition of the organic member. In addition, the inflow port 5 and the outflow port 6 may be sufficient as the hole connected to an organic member.

  Then, for example, if the degreased body is put in a known pusher type or roller type continuous tunnel furnace and the material of the degreased body is alumina, it is fired in an oxidizing atmosphere at a temperature range of about 1410 to 1650 ° C. for 1 to 20 hours, If the material of the degreased body is silicon carbide, it is held in a temperature range of 1800 to 2200 ° C. for 10 minutes to 10 hours in an inert gas atmosphere or a vacuum atmosphere, and further in a temperature range of 2200 to 2350 ° C. for 10 minutes to By baking for 20 hours, the flow path member 1 of this embodiment can be produced.

  Moreover, when producing the flow path member 1 of this embodiment with a laminated body, the following method is employable.

  First, a green sheet is formed by a doctor blade method, which is a general ceramic forming method, using a slurry obtained by the same production method as described above. Alternatively, the slurry is spray-dried by a spray granulation method (spray dry method) to obtain a granulated raw material, and then a green sheet is formed by a dry pressure molding method or a powder rolling method.

  Then, the obtained green sheet is subjected to laser processing or press working with a mold. Note that the green sheet is processed so as to have a desired flow path after lamination. For the inflow port 5 and the outflow port 6, for example, when obtaining a green sheet to be the lid body 2, a through hole may be formed in addition to the outer shape. And the position in the height or thickness direction of a flow path and the partition part 7 is freely set by changing the thickness of each green sheet as needed, or changing the number of the green sheets to laminate | stack. be able to.

  Next, the same slurry as that used for producing the green sheet is applied as a bonding agent to the bonding surface of each green sheet. And each green sheet is stacked, a pressure of about 0.5 MPa is applied through a flat plate-like pressurizer, and then dried at room temperature of about 50 to 70 ° C. for about 10 to 15 hours to form a laminated molded body And

In particular, when the attached barrier portion 8b is provided at the end of the partition wall portion 7, the area in contact with the lid portion 2 and the bottom plate portion 4 is increased by the amount provided with the attached barrier portion 8b. As a result, the area to be increased increases, the members can be firmly bonded to each other, and the reliability can be improved.

  In addition, when providing the attached barrier part 8b in the end of the partition part 7 connected with the side wall part 3, the green sheet processed so that the side wall part 3, the partition part 7, and the attached barrier part 8b may be left by laser processing or pressing. However, when the independent barrier portion 8a is provided, after obtaining the molded body that becomes the independent barrier portion 8a by the powder press molding method using the granule raw material described above, it can be placed at a desired position during lamination. Good.

  And the flow-path member 1 of this embodiment can be obtained by baking a laminated molded object on the baking conditions as mentioned above.

  FIG. 3 is a perspective view showing an example of the heat exchanger of the present embodiment. In the heat exchanger 14 of this embodiment shown in FIG. 3, the example which has provided the metal member in the surface of the cover body part 2 in the flow-path member 1 of this embodiment is shown.

  Thus, since the heat exchanger 14 of the present embodiment is provided with the metal member 15 on the surface of the lid portion 2 of the flow path member 1 of the present embodiment, the heat exchanger 14 having high heat exchange performance and can do. Although not shown, the metal member 15 can be provided inside the lid portion 2.

  Here, as a method of forming the metal member 15 on the surface of the lid body portion 2 of the flow path member 1 of the present embodiment, a paste containing tungsten, molybdenum, silver, copper or aluminum is formed by a known printing method. It may be formed by printing on the surface 2 and heat-treating, or joining the above-described metal component plate-like members using an active metal method or a brazing method.

  Further, as a method of forming the metal member 15 inside the lid body portion 2, when forming the lid body portion 2, a space is formed inside, and the formed space is filled with the paste containing the metal component described above. It may be formed by heat treatment.

  Next, the case where the heat exchanger 14 of the present embodiment having the above configuration is used in the semiconductor manufacturing apparatus 16 will be described below. For example, an electronic component that generates heat such as an LED element or a power semiconductor is disposed as a heating element. This is particularly effective when a semiconductor device is used.

  FIG. 4 is a schematic diagram illustrating an example of an overall system configuration of a semiconductor manufacturing apparatus using the heat exchanger of the present embodiment.

  The semiconductor manufacturing apparatus 16 of this embodiment shown in FIG. 4 includes a heat exchanger 14 in which a metal member 15 is provided on the lid 2 of the flow path member 1 of this embodiment, and the metal member 15 is a wafer 17. It is an electrode for adsorbing. In addition, in the flow path member 1 shown in FIG. 4, the example in which the inflow port 5 and the outflow port 6 which flow a fluid to the baseplate part 4 are provided is shown. Then, a pipe 19 is connected to each of the inlet 5 and the outlet 6 so that the wafer 17 can be heated or cooled by feeding and discharging a fluid such as a high-temperature or low-temperature gas or liquid to the flow path member 1. Is connected.

  The semiconductor manufacturing apparatus 16 is a plasma processing apparatus for a wafer 17, and the wafer 17 is placed on a heat exchanger 14 in which a metal member 15 is provided on the lid body portion 2 of the flow path member 1 of the present embodiment. An example is shown.

Further, an upper electrode 20 for generating plasma is provided above the wafer 17, and the metal member 15 can be used as a lower electrode for generating plasma. By applying a voltage between the electrode 20 and the electrode 20, plasma generated between the metal member 15 as the lower electrode and the upper electrode 20 can be applied to the wafer 17. And since the heat exchanger 14 is provided with the flow path member 1 of this embodiment, the metal member 15 as the lower electrode that becomes high temperature during plasma processing can be maintained at a stable temperature. Further, since the temperature of the wafer 17 is also controlled, processing with high dimensional accuracy can be performed.

  Although FIG. 4 shows an example in which the metal member 15 is used as a lower electrode for plasma generation, if the metal member 15 is heated by flowing an electric current, the temperature of the fluid can be adjusted. Furthermore, if the lid 2 is formed of a dielectric material, the metal member 15 is used as an electrode for electrostatic attraction, and a voltage is applied to the metal member 15, the clone force generated between the wafer 17 and the dielectric layer. Alternatively, the wafer 17 can be attracted and held by electrostatic attraction such as Johnson or Johnson-Rahbek force.

  In addition to the plasma processing apparatus, the semiconductor manufacturing apparatus 16 of the present embodiment can be used as a sputtering apparatus, a resist coating apparatus, a CVD apparatus, or an etching processing apparatus.

  Although the present invention has been described in detail above, the present invention is not limited to the above-described embodiments, and various modifications and improvements can be made without departing from the scope of the present invention. .

  For example, in the above-described flow path member 1, when the partition wall portion 7 is viewed in a cross section (longitudinal cross section) perpendicular to the fluid flow direction, it has a stepped shape from the bottom plate portion 4 to the lid body portion 2 (lid body). It is also possible to form a shape that is narrow on the portion 2 side, or a tapered shape (narrow on the lid portion 2 side) from the bottom plate portion 4 to the lid portion 2.

  Moreover, in the above-mentioned flow path member 1, although demonstrated using the example which has two or more partition parts 7, the number of the partition parts 7 is not specifically limited, For example, one may be sufficient. .

DESCRIPTION OF SYMBOLS 1, 12, 13: Channel member 2: Lid body part 3: Side wall part 4: Bottom plate part 7: Partition part 8: Barrier part 8a: Independent barrier part 8b: Attached barrier part 14: Heat exchanger 16: Semiconductor manufacturing apparatus C: Change area

Claims (7)

A flow path member made of ceramics, having a lid part, a side wall part, a bottom plate part, and a partition wall part, a space surrounded by each part being a fluid flow path, wherein one end of the partition wall part and A flow path member comprising a barrier portion in at least one of the other ends. A flow path member made of ceramics, having a lid part, a side wall part, a bottom plate part, and a partition part, and a space surrounded by each part is a fluid flow path, wherein the flow path is folded back A flow path member having a flow path structure, comprising a barrier portion at an end of the partition wall adjacent to the folded portion. The flow path member according to claim 1 or 2 , wherein the barrier portion has a curved portion in a cross-sectional view parallel to the main surface of the lid portion. 2. The flow path member according to claim 1, wherein the flow path has a folded flow path structure, and the barrier portion is provided at an end of the partition wall adjacent to the folded portion.   The flow path member according to any one of claims 1 to 4, wherein the barrier portion is provided at one end of the partition wall adjacent to the inlet of the fluid.   A heat exchanger, wherein a metal member is provided on the surface or inside of the lid portion of the flow path member according to any one of claims 1 to 5.   A semiconductor manufacturing apparatus comprising a heat exchanger in which a metal member is provided on the lid portion of the flow path member according to claim 1.

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