JP6430740B2 - ソリッドステートメモリシステムにおけるレイテンシーベースのデータ再利用のシステム及び方法 - Google Patents

ソリッドステートメモリシステムにおけるレイテンシーベースのデータ再利用のシステム及び方法 Download PDF

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JP6430740B2
JP6430740B2 JP2014148529A JP2014148529A JP6430740B2 JP 6430740 B2 JP6430740 B2 JP 6430740B2 JP 2014148529 A JP2014148529 A JP 2014148529A JP 2014148529 A JP2014148529 A JP 2014148529A JP 6430740 B2 JP6430740 B2 JP 6430740B2
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data
access
threshold
iteration
memory device
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JP2015111388A (ja
JP2015111388A5 (enExample
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ユ,カイ
ユンクシアン,ウー
ニン,チェン
エンリヒ,ハラッシュ
ゼンガン,チェン
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LSI Corp
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LSI Logic Corp
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JP2014148529A 2013-11-05 2014-07-22 ソリッドステートメモリシステムにおけるレイテンシーベースのデータ再利用のシステム及び方法 Expired - Fee Related JP6430740B2 (ja)

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US14/072,530 US9424179B2 (en) 2013-10-17 2013-11-05 Systems and methods for latency based data recycling in a solid state memory system
US14/072530 2013-11-05

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JP2015111388A JP2015111388A (ja) 2015-06-18
JP2015111388A5 JP2015111388A5 (enExample) 2017-03-02
JP6430740B2 true JP6430740B2 (ja) 2018-11-28

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CN (1) CN105279129B (enExample)

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KR102618699B1 (ko) * 2016-09-28 2024-01-02 삼성전자주식회사 호스트에 의해 제어되는 스토리지 장치를 포함하는 컴퓨팅 시스템

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JP4791912B2 (ja) * 2006-08-31 2011-10-12 株式会社東芝 不揮発性半導体記憶装置及び不揮発性記憶システム
US8914804B2 (en) * 2007-09-12 2014-12-16 Red Hat, Inc. Handling queues associated with web services of business processes
US8959280B2 (en) * 2008-06-18 2015-02-17 Super Talent Technology, Corp. Super-endurance solid-state drive with endurance translation layer (ETL) and diversion of temp files for reduced flash wear
US7808831B2 (en) * 2008-06-30 2010-10-05 Sandisk Corporation Read disturb mitigation in non-volatile memory
US7859932B2 (en) * 2008-12-18 2010-12-28 Sandisk Corporation Data refresh for non-volatile storage
WO2012042444A1 (en) * 2010-09-29 2012-04-05 International Business Machines Corporation Decoding in solid state memory devices
JP2012133642A (ja) * 2010-12-22 2012-07-12 Sony Corp メモリ装置、メモリ制御方法、およびプログラム
CN103176752A (zh) * 2012-07-02 2013-06-26 晶天电子(深圳)有限公司 带有耐用转换层及临时文件转移功能从而实现闪速存储器磨损降低的超耐用固态驱动器

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CN105279129B (zh) 2018-02-06
CN105279129A (zh) 2016-01-27

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