JP6429525B2 - 撮像装置、撮像システムおよび撮像装置の製造方法 - Google Patents

撮像装置、撮像システムおよび撮像装置の製造方法 Download PDF

Info

Publication number
JP6429525B2
JP6429525B2 JP2014156787A JP2014156787A JP6429525B2 JP 6429525 B2 JP6429525 B2 JP 6429525B2 JP 2014156787 A JP2014156787 A JP 2014156787A JP 2014156787 A JP2014156787 A JP 2014156787A JP 6429525 B2 JP6429525 B2 JP 6429525B2
Authority
JP
Japan
Prior art keywords
pixel electrode
photoelectric conversion
pixel
film
imaging device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2014156787A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016033979A5 (enExample
JP2016033979A (ja
Inventor
雄基 川原
雄基 川原
小林　広明
広明 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2014156787A priority Critical patent/JP6429525B2/ja
Priority to US14/810,285 priority patent/US9825086B2/en
Publication of JP2016033979A publication Critical patent/JP2016033979A/ja
Publication of JP2016033979A5 publication Critical patent/JP2016033979A5/ja
Application granted granted Critical
Publication of JP6429525B2 publication Critical patent/JP6429525B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2014156787A 2014-07-31 2014-07-31 撮像装置、撮像システムおよび撮像装置の製造方法 Expired - Fee Related JP6429525B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2014156787A JP6429525B2 (ja) 2014-07-31 2014-07-31 撮像装置、撮像システムおよび撮像装置の製造方法
US14/810,285 US9825086B2 (en) 2014-07-31 2015-07-27 Image pickup apparatus, image pickup system, and method for manufacturing image pickup apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014156787A JP6429525B2 (ja) 2014-07-31 2014-07-31 撮像装置、撮像システムおよび撮像装置の製造方法

Publications (3)

Publication Number Publication Date
JP2016033979A JP2016033979A (ja) 2016-03-10
JP2016033979A5 JP2016033979A5 (enExample) 2017-09-07
JP6429525B2 true JP6429525B2 (ja) 2018-11-28

Family

ID=55180850

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014156787A Expired - Fee Related JP6429525B2 (ja) 2014-07-31 2014-07-31 撮像装置、撮像システムおよび撮像装置の製造方法

Country Status (2)

Country Link
US (1) US9825086B2 (enExample)
JP (1) JP6429525B2 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6303803B2 (ja) 2013-07-03 2018-04-04 ソニー株式会社 固体撮像装置およびその製造方法
US11437418B2 (en) * 2016-02-29 2022-09-06 Sony Corporation Solid-state image pickup device
CN115332277A (zh) * 2017-06-21 2022-11-11 索尼半导体解决方案公司 成像元件、层叠式成像元件和固态成像装置
JP7099073B2 (ja) * 2017-06-21 2022-07-12 ソニーグループ株式会社 撮像素子、積層型撮像素子及び固体撮像装置
US10705347B2 (en) * 2018-05-30 2020-07-07 Apple Inc. Wafer-level high aspect ratio beam shaping
US10700780B2 (en) 2018-05-30 2020-06-30 Apple Inc. Systems and methods for adjusting movable lenses in directional free-space optical communication systems for portable electronic devices
US11303355B2 (en) 2018-05-30 2022-04-12 Apple Inc. Optical structures in directional free-space optical communication systems for portable electronic devices
US11549799B2 (en) 2019-07-01 2023-01-10 Apple Inc. Self-mixing interference device for sensing applications
FR3098996A1 (fr) * 2019-07-16 2021-01-22 Isorg Capteur d'images
JP7660285B2 (ja) * 2020-01-23 2025-04-11 パナソニックＩｐマネジメント株式会社 撮像装置
US11843022B2 (en) * 2020-12-03 2023-12-12 Sharp Kabushiki Kaisha X-ray imaging panel and method of manufacturing X-ray imaging panel
US11916094B2 (en) * 2021-08-02 2024-02-27 Sharp Display Technology Corporation Photoelectric conversion panel and method for manufacturing photoelectric conversion panel
US12413043B2 (en) 2021-09-21 2025-09-09 Apple Inc. Self-mixing interference device with tunable microelectromechanical system

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6292365A (ja) * 1985-10-18 1987-04-27 Fuji Photo Film Co Ltd 半導体装置およびその製造方法
JPS62117367A (ja) * 1985-11-18 1987-05-28 Toshiba Corp 固体撮像装置
JPS62122268A (ja) * 1985-11-22 1987-06-03 Fuji Photo Film Co Ltd 固体撮像素子
JPH03278458A (ja) * 1990-03-08 1991-12-10 Sharp Corp 薄膜受光装置
US7875949B2 (en) * 2008-02-28 2011-01-25 Visera Technologies Company Limited Image sensor device with submicron structure
JP5365221B2 (ja) * 2009-01-29 2013-12-11 ソニー株式会社 固体撮像装置、その製造方法および撮像装置
JP5677890B2 (ja) * 2010-09-30 2015-02-25 富士フイルム株式会社 光電変換素子、光電変換素子の製造方法、及び撮像素子
JP5694840B2 (ja) * 2011-04-20 2015-04-01 富士フイルム株式会社 有機撮像素子および有機撮像素子の製造方法
WO2014027588A1 (ja) * 2012-08-14 2014-02-20 ソニー株式会社 固体撮像装置および電子機器

Also Published As

Publication number Publication date
US20160035768A1 (en) 2016-02-04
US9825086B2 (en) 2017-11-21
JP2016033979A (ja) 2016-03-10

Similar Documents

Publication Publication Date Title
JP6429525B2 (ja) 撮像装置、撮像システムおよび撮像装置の製造方法
US20220190022A1 (en) Image sensors
US10903279B2 (en) Solid state image sensor pixel electrode below a photoelectric conversion film
US10707254B2 (en) Semiconductor devices
US11233087B2 (en) Image sensor
US9991305B2 (en) Stacked type solid state imaging apparatus and imaging system
KR102730554B1 (ko) 고체 촬상 소자, 제조 방법 및 전자 기기
US11393854B2 (en) Image sensor with photoelectric part and transfer gate on opposite sides of the substrate
US11322530B2 (en) Image sensor
US10964734B2 (en) Image sensor
US20160301882A1 (en) Solid-state imaging device and method of manufacturing the solid-state imaging device
US10269849B2 (en) Imaging device including photoelectric conversion film for continuously covering electrodes having a distance between a counter electrode and a pixel electrode or an intermediate electrode is smaller than a distance between the counter electrode and an insulating member
US20200395397A1 (en) Image sensor and image-capturing device
US20210202547A1 (en) Image sensor and method of fabricating the same
US9086577B2 (en) Solid-state imaging apparatus and imaging system
US11843020B2 (en) Image sensor
JP2010045083A (ja) 固体撮像素子
US20140110771A1 (en) Solid-state imaging device and semiconductor device
US9305950B2 (en) Solid-state imaging apparatus and imaging system
US20250374698A1 (en) Image sensor and method of fabricating the same

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170728

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20170728

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20180807

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180913

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20181002

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20181030

R151 Written notification of patent or utility model registration

Ref document number: 6429525

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151

LAPS Cancellation because of no payment of annual fees