JP6388953B2 - Organic light emitting device and anode material - Google Patents

Description

  The present invention relates to an organic light-emitting device having an anode made of a graphene film and an anode material thereof.

  The organic light emitting element utilizes a phenomenon (organic electroluminescence) in which an electric current is injected into an organic material to emit light. The organic light emitting device has a basic structure in which an anode, an organic layer, and a cathode are stacked. The anode is composed of a transparent conductive film provided on a transparent substrate. The organic layer includes a light emitting layer made of an organic light emitting material. The cathode is composed of a metal film. Conventionally, indium tin oxide (ITO) has been used for a transparent electrode (anode) used in an organic light emitting device. From the viewpoint of flexibility, there is a demand for a new electrode material that replaces ITO.

  Graphene composed of only carbon and having a honeycomb structure is a material having high mobility, high flexibility, and high thermal conductivity, and thus is expected as an electrode material that solves the above problems. Further, the anode of the organic light emitting device is required to have low resistance and high transmittance. In response to these requirements, research aimed at improving the quality of graphene films has been actively pursued (Patent Document 1, Patent Document 2, and Non-Patent Document 1).

  On the other hand, in order to increase the brightness of organic light-emitting elements using graphene and to drive at a low voltage, the work function of graphene has been increased and the resistance has been reduced mainly by using chemical doping materials. However, the chemical doping material is not very stable in the atmosphere, and the doping material may agglomerate into particles, and the agglomerated particles may cause a leakage current. For this reason, there is a demand for higher brightness and lower voltage driving of organic light-emitting elements without using chemical doping materials.

  In general organic light emitting devices, a conductive polymer such as a mixture of polyethylenedioxythiophene and polysulfonic acid (PEDOT: PSS) is inserted as a hole injection layer between the anode and the organic light emitting material to improve the hole injection efficiency. Has improved. This insertion of the hole injection layer is considered to be applicable when a graphene film is used for the anode. When providing a hole injection layer on a graphene film, it is necessary to coat | cover a hole injection layer uniformly on a graphene film.

In Patent Document 3, in an organic light-emitting device composed of an anode (transparent electrode), an organic film (hole transport layer + organic light-emitting layer), and a cathode, a carbon film is provided between the anode and the organic film. Therefore, it has been proposed to suppress the dark spots generated at the interface between the anode and the organic film and improve the light emission characteristics. Then, it shows a Raman spectrum having a peak near 1550 cm ^-1 and near 1350 cm ^-1 in Raman spectroscopy, the ratio of the relative intensity of the area strength of the low frequency side with respect to the integrated intensity of the high frequency side is 1.0 to 3.0 The following amorphous carbon is used as this carbon film.

JP 2012-162442 A Japanese Patent Application No. 2014-117773 JP 2001-167890 A

2014 61st JSAP Spring Meeting, 20a-2E-12

  Until now, research on a graphene film having a low resistance and a high transmittance has been advanced as a material to replace the ITO transparent electrode. It has been found that a graphene film having a D band intensity smaller than that of a G band in a Raman spectrum is a high-quality graphene film with good crystallinity that satisfies this requirement (see Non-Patent Document 1). However, it has been found that the higher the quality of the graphene film, the lower the work function, and the surface state of the graphene changes, which may deteriorate the hole injection efficiency of the organic light emitting device.

  The present invention has been made in view of the current situation, and aims to provide a graphene film having a low resistance and a high work function without a chemical doping material in an organic light emitting device using a graphene film as a transparent conductive film. To do.

  As a result of intensive studies to achieve the above object, the inventors of the present invention superimpose a second graphene film whose D band intensity is higher than that of the G band in the Raman spectrum on the conventional high quality graphene. Thus, it was found that the work function of graphene can be increased while maintaining the low resistance of the graphene film itself.

The present invention has been completed based on these findings, and the following inventions are provided.
[1] An organic light emitting device having a transparent substrate, an anode, a hole injection layer, an organic light emitting layer, and a cathode, wherein the anode, the hole injection layer, the organic light emitting layer, and the cathode are transparent. Laminated on the base material in this order, the anode is composed of a graphene film, the graphene film includes a first graphene film and a second graphene film formed on the first graphene film, An organic light emitting device in which the sheet carrier density of the second graphene film is larger than the sheet carrier density of the first graphene film.

[2] An organic light emitting device having a transparent substrate, an anode, a hole injection layer, an organic light emitting layer, and a cathode, wherein the anode, the hole injection layer, the organic light emitting layer, and the cathode are transparent. Laminated on the base material in this order, the anode is composed of a graphene film, the graphene film includes a first graphene film and a second graphene film formed on the first graphene film, An organic light-emitting element in which the work function of the second graphene film is larger than that of the first graphene film.

[3] In the above [1] or [2], the first graphene film has a D-band intensity smaller than the G-band intensity in the Raman spectrum, and the second graphene film has a D-band intensity in the Raman spectrum. An organic light emitting device having an intensity greater than that of the G band.

[4] An anode material for an organic light emitting device having a transparent substrate, an anode, a hole injection layer, an organic light emitting layer, and a cathode, comprising a graphene film, and the graphene film is formed of a first graphene film An anode material for an organic light-emitting element in which a second graphene film is stacked and a sheet carrier density of the second graphene film is larger than a sheet carrier density of the first graphene film.

[5] An anode material for an organic light emitting device having a transparent substrate, an anode, a hole injection layer, an organic light emitting layer, and a cathode, comprising a graphene film, and the graphene film is formed of a first graphene film An anode material of an organic light-emitting element in which a second graphene film is stacked and a work function of the second graphene film is larger than that of the first graphene film.

[6] In the above [4] or [5], the first graphene film has a D band intensity smaller than the G band intensity in the Raman spectrum, and the second graphene film has a D band intensity in the Raman spectrum. An anode material for an organic light emitting device having an intensity greater than that of the G band.

  According to the present invention, the luminance of the organic light emitting device is increased. Since a graphene film with many carbon atoms missing (lattice defects) or a film with a small graphene domain size is formed as a functional graphite film on the graphite film, the work function of the transparent electrode of the organic light emitting device is increased. It is considered that the hole injection layer was uniformly applied.

Sectional drawing which shows the structure of the organic light emitting element of this invention typically. The figure which shows the Raman spectrum of the high quality graphene film obtained in the Example. The figure which shows the Raman spectrum of the functional graphene film obtained in the Example. The figure which shows the transfer method of the graphene film to the transparent substrate. The figure which shows the luminance-voltage measurement result of the organic light emitting element obtained in the Example. The figure which shows the luminance-voltage measurement result of the organic light emitting element obtained by the comparative example. The figure which shows the ratio of D band intensity with respect to G band intensity of a graphene film, and the relationship of a sheet carrier density.

  Hereinafter, the organic light-emitting device and the anode material of the present invention will be described based on embodiments and examples. In addition, duplication description is abbreviate | omitted suitably. In addition, when “˜” is described between two numerical values to represent a numerical range, these two numerical values are also included in the numerical range.

FIG. 1 shows a cross section of an organic light emitting device according to an embodiment of the present invention. As shown in FIG. 1, the organic light-emitting device of this embodiment includes a transparent substrate 101, an anode, a hole injection layer 104, an organic light-emitting layer 105, and a cathode 106 in order from the bottom. By applying a voltage between the anode and the cathode 106, positive electrode or colleagues holes, from the cathode 106 to emit light by injecting electrons into the organic light-emitting layer 105. The anode is made of a graphene film, and includes a first graphene film (hereinafter sometimes referred to as “high-quality graphene film”) 102 and a second graphene film (hereinafter referred to as “the graphene film”) formed on the first graphene film 102. 103) (sometimes referred to as “functional graphene film”).

  The sheet carrier density of the second graphene film 103 is larger than the sheet carrier density of the first graphene film 102. Instead of or in combination with this, the work function of the second graphene film 103 may be larger than the work function of the first graphene film 102. Further, in the present embodiment, the first graphene film 102 has a D-band intensity smaller than the G-band intensity in the Raman spectrum, and the second graphene film 103 has a D-band intensity in the Raman spectrum of the G-band intensity. Greater than.

  The high-quality graphene film 102 is manufactured by the following method using plasma treatment (see Patent Document 2). That is, while heating the substrate, the carbon component in the substrate is activated by the energy of charged particles and electrons generated by the plasma, and graphene is generated using a carbon source existing in the substrate and the surroundings. Carbon sources include copper, iridium, platinum, which are metals that are difficult to dissolve carbon, or carbon components contained in substrates made of carbon alloys with these metals, trace amounts of carbon components attached to the reaction vessel, or plasma. The trace amount carbon component contained in the gas used for a process is mentioned.

  According to this method, it is possible to form graphene in a shorter time compared with the conventional thermal CVD method and resin carbonization method. The carbon content of the metal substrate is desirably 4 ppm to 10000 ppm, and the surface roughness Ra of the substrate is desirably 200 nm to 0.095 nm. Furthermore, it is desirable to heat the substrate at 900 ° C. or lower.

  On the other hand, the functional graphene film 103 is manufactured by the following method using a plasma CVD synthesis apparatus (see Patent Document 1). That is, plasma treatment is performed in a state where the temperature of the substrate is lowered using a carbon-containing gas or a mixed gas of a carbon-containing gas and an inert gas as a source gas. Examples of the carbon-containing gas include methane, ethylene, acetylene, ethanol, acetone, or methanol. Examples of the inert gas include helium, neon, and argon. The substrate temperature at the time of CVD processing is 500 degrees C or less, for example, Preferably it is 200 to 450 degreeC.

  Note that there is no particular limitation on the method for manufacturing the high-quality graphene film 102 as long as a graphene film with a lower D-band intensity than a G-band intensity is obtained in the Raman spectrum. There is no particular limitation on the method for manufacturing the functional graphene film 103 as long as a graphene film with a higher D band intensity than a G band intensity is obtained in the Raman spectrum. As another method for producing high-quality graphene, for example, a thermal CVD method can be given. Another method for producing functional graphene is, for example, a thermal CVD method at a low temperature.

FIG. 2A shows the Raman spectrum of the high-quality graphene film obtained in the examples described later. FIG. 2B shows the Raman spectrum of the functional graphene film obtained in the examples described later. In the Raman spectroscopic measurement, a laser beam having a wavelength of 638 nm was used. In FIG. 2A, the intensity (ID) of the D band (˜1350 cm ⁻¹ ) is smaller than the intensity (IG) of the G band (˜1585 cm ⁻¹ ) (ID <IG), and a strong 2D peak appears. is there. On the other hand, in FIG. 2B, the intensity of the D band is greater than the intensity of the G band (ID> IG). Although the 2D band is small, the strength of the 2D band is not limited in the present invention.

The D band is thought to reflect the number of lattice defects, the domain size, or the graphene edge structure. In particular, ID / IG is used to estimate the domain size of graphene. The calculation formula for estimating the domain size is given by La (nm) = (2.4 × 10 ⁻¹⁰ ) λ ⁴ (ID / IG) ⁻¹ , where λ is the wavelength of the laser beam used for Raman spectroscopic measurement. (APL 88, 163106 (2006)). In the case of ID / IG = 1, the domain size is about 40 nm. From these estimates, it can be said that the high-quality graphene film is a film in which flakes having an average domain size of 40 nm or more are collected. In other words, the functional graphene film is a film in which flakes having an average domain size of 40 nm or less are collected.

  In the present invention, the increase in the work function of the functional graphene film is considered to be due to the increase in the sheet carrier density. If there are a large number of defects in the graphene film, there are a large number of unbonded bonds (dangling bonds), and many carriers are generated due to the bonds. The presence of a large number of carriers changes the ideal Fermi level of graphene. In addition to the increase in the work function of the functional graphene film, the organic light emitting device of the present embodiment may have improved organic light emitting characteristics due to the following factors. First, a surface plasmon effect due to a functional graphene film having a domain size of several tens of nanometers or less and a diffused light reflection effect due to this structure can be considered. It is also conceivable that the use of the functional graphene film improves the wettability of the anode surface and improves the film thickness uniformity of the hole injection layer.

  EXAMPLES Hereinafter, although this invention is demonstrated based on an Example, this invention is not limited to this Example.

(Manufacture of high quality graphene film)
First, a copper foil having a thickness of about 10 μm was prepared as a catalyst metal and set in a surface wave plasma CVD chamber. Next, the copper foil was irradiated with plasma in a hydrogen (200 sccm) atmosphere for 45 seconds while maintaining the temperature of the copper foil at about 900 ° C. by energization heating to obtain a high-quality graphene film. FIG. 2A shows a Raman spectrum of the obtained high quality graphene film.

(Manufacture of functional graphene film)
The manufacturing method of the functional graphene film is as follows.
First, a copper foil was prepared as a catalyst metal and set in a surface wave plasma CVD chamber. Next, the copper foil was irradiated with plasma in an atmosphere of hydrogen helium (H ₂ / He = 50 sccm / 10 sccm) for 20 minutes to clean the surface of the copper foil. Then, helium methane hydrogen (CH ₄ / H ₂ / He = 50 sccm / 10 sccm / 20 sccm) was introduced, and plasma was irradiated to the copper foil for 2 minutes to obtain a functional graphene film. Intentional heating is not performed. FIG. 2B shows a Raman spectrum of the obtained functional graphene film.

(Manufacture of organic light emitting devices)
A 40 mm × 40 mm PET substrate was prepared as a transparent substrate, and a high-quality graphene film and a functional graphene film were peeled and transferred onto the PET substrate as follows. FIG. 3 shows a procedure for peeling the graphene film from the copper foil and transferring it to the transparent substrate. First, as shown in FIG. 3A, the high-quality graphene film 102 formed on the copper foil 107 was bonded to a heat release sheet 108 (manufactured by Nitto Denko Corporation, Riba Alpha). Next, after etching the copper foil 107 with 0.5 mol / L ammonium persulfate, the copper foil 107 was washed with running water to obtain a high-quality graphene film-attached thermal release sheet. Similarly, as shown in FIG.3 (b), the thermal peeling sheet | seat with a functional graphene film was obtained. Then, after the surface of the high quality graphene film of the high quality graphene film-attached heat release sheet is attached to the transparent substrate 101, the heat release sheet is peeled off by heating, and as shown in FIG. A high quality graphene film 102 was formed thereon.

  Further, in the same manner, a heat release sheet with a functional graphene film was stacked on the high-quality graphene film 102. Then, as shown in FIG. 3 (d), by removing the thermal release sheet, a transparent conductive film in which two types of graphene films 102 and 103 were laminated on the transparent substrate 101 was produced. The sheet resistance of the obtained transparent conductive film was measured by 4-terminal measurement. The average value of the sheet resistance when measuring four places was about 1000Ω. Note that the high-quality graphene film 102 and the functional graphene film 103 may be attached in advance. A stacked body in which the high-quality graphene film 102 and the functional graphene film 103 are bonded can be distributed as an anode material of the organic light-emitting element.

  And in order to improve the wettability with respect to a hole injection layer, UV ozone was irradiated to the transparent conductive film for 20 minutes using UV ozone processing apparatus (made by Filgen). In another experiment, the sheet resistance of the transparent conductive film and the sheet resistance after irradiating the transparent conductive film with UV ozone for 20 minutes were measured, but the sheet resistance hardly changed. After the UV ozone treatment was performed on the transparent conductive film, materials related to the organic light emitting device were laminated. First, PEDOT: PSS, which is a material for the hole injection layer, was applied by spin coating, and then the hole injection layer 104 was formed by pre-baking.

  Next, after spin-coating a toluene solution of an organic light emitting material (manufactured by MERCK, SUPER YELLOW), the organic light emitting layer 105 was formed by pre-baking. Then, using a vacuum deposition apparatus, LiF / Al was deposited on the organic light emitting layer 105 to form the cathode 106. Next, the organic light emitting device was sealed so that the organic light emitting material was not deteriorated as much as possible. That is, after placing a desiccant (SAES Getters, Dry Paste) on the cathode 106, the organic light-emitting element is made of a fluororesin tape (manufactured by Nitto Denko Corporation, Teflon tape so that moisture does not enter the organic light-emitting element from the surroundings. ).

(Current-voltage measurement and brightness measurement)
Using a source meter (manufactured by Keithley, 2400), current-voltage measurements of five organic light emitting devices were performed. Moreover, the luminance measurement of these five organic light emitting elements was performed using the luminance meter (Topcon company make, BM9). FIG. 4A shows the luminance-voltage measurement results based on these measurements. As shown in FIG. 4A, when a voltage is applied to the 15V, it indicates the luminance of ^{250cd / m 2 ~550cd / m 2} .

(Comparative example)
In order to confirm the usefulness of the functional graphene film, an organic light-emitting device in which the anode is composed of only a high-quality graphene film, that is, the functional graphene film is not provided on the anode, was manufactured as a comparative example. The production procedure and evaluation items of the organic light emitting device of the comparative example are substantially the same as those of the organic light emitting device of the example. The sheet resistance of the transparent conductive film of the comparative example was about 1000Ω, which was the same value as the sheet resistance of the transparent conductive film of the example. The brightness-voltage measurement results of the five organic light emitting devices of the comparative examples are shown in FIG. 4B. When a voltage of 15 V was applied, the luminance was 75 cd / m ^{2 to} 150 cd / m ² . From the evaluation results of the examples and comparative examples, it was shown that the luminance of the organic light-emitting element can be increased several times by using a functional graphene film for the anode.

(Measurement of sheet carrier density)
The sheet carrier density of graphene reflects the work function (Fermi level). Therefore, the sheet carrier density of high-quality graphene film and functional graphene film was estimated by Hall effect measurement. For the measurement, a graphene device (van der Pauw element) manufactured using photolithography was used. In addition, Raman spectroscopic measurement of the same device was performed, the intensity ratio of the D band and G band was obtained, and the quality of graphene was evaluated. The high-quality graphene film and functional graphene film used for the measurement are the same as the above-mentioned `` manufacturing high-quality graphene film '' and `` manufacturing functional graphene film ''. Made by changing.

FIG. 5 shows the relationship between the ratio of the intensity of the D band to the intensity of the G band and the sheet carrier density. In the high quality graphene film, the ratio of the intensity of the D band to the intensity of the G band is 0.6 or less, and the sheet carrier density is 0.5 × 10 ¹² 1 / cm ^{2 to} 1.5 × 10 ¹³ 1 / cm ² . there were. On the other hand, in the functional graphene film, the ratio of the intensity of the D band to the intensity of the G band is 1.0 or more, and the sheet carrier density is 2.5 × 10 ¹³ 1 / cm ^{2 to} 4.4 × 10 ¹³ 1 / cm. ² . High-quality graphene has a low ratio of the intensity of the D band to the intensity of the G band and tends to have a low carrier density. On the other hand, the functional graphene film has a high ratio of D band intensity to G band intensity and a high sheet carrier density. According to this result, it is presumed that the work function of the functional graphene film is higher than the work function of the high-quality graphene film.

  According to the present invention, an anode whose sheet carrier density and work function can be freely changed can be formed in an organic light emitting device by selecting a high-quality graphene film and a functional graphene film, respectively. For this reason, this invention is useful for manufacture of an organic light emitting element.

Claims (6)

An organic light emitting device having a transparent substrate, an anode, a hole injection layer, an organic light emitting layer, and a cathode,
And the anode, and the hole injection layer, and the organic light emitting layer, and the cathode are laminated in this order on the transparent substrate,
The anode comprises a graphene film;
The graphene film includes a first graphene film and a second graphene film formed on the first graphene film,
The second graphene film is a graphene film in which flakes having an average domain size of 40 nm or less are collected,
An organic light emitting device in which a sheet carrier density of the second graphene film is larger than a sheet carrier density of the first graphene film. An organic light emitting device having a transparent substrate, an anode, a hole injection layer, an organic light emitting layer, and a cathode,
And the anode, and the hole injection layer, and the organic light emitting layer, and the cathode are laminated in this order on the transparent substrate,
The anode comprises a graphene film;
The graphene film includes a first graphene film and a second graphene film formed on the first graphene film,
The second graphene film is a graphene film in which flakes having an average domain size of 40 nm or less are collected,
An organic light emitting device in which a work function of the second graphene film is larger than a work function of the first graphene film. In claim 1 or 2,
In the Raman spectrum, the first graphene film has a D band intensity smaller than a G band intensity,
The organic light-emitting element in which the second graphene film has a D-band intensity greater than a G-band intensity in a Raman spectrum. An anode material of an organic light emitting device having a transparent substrate, an anode, a hole injection layer, an organic light emitting layer, and a cathode,
Made of graphene film,
The graphene film is formed by laminating a first graphene film and a second graphene film,
The second graphene film is a graphene film in which flakes having an average domain size of 40 nm or less are collected,
An anode material for an organic light emitting device, wherein a sheet carrier density of the second graphene film is larger than a sheet carrier density of the first graphene film. An anode material of an organic light emitting device having a transparent substrate, an anode, a hole injection layer, an organic light emitting layer, and a cathode,
Made of graphene film,
The graphene film is formed by laminating a first graphene film and a second graphene film,
The second graphene film is a graphene film in which flakes having an average domain size of 40 nm or less are collected,
An anode material of an organic light emitting element, wherein a work function of the second graphene film is larger than a work function of the first graphene film. In claim 4 or 5,
In the Raman spectrum, the first graphene film has a D band intensity smaller than a G band intensity,
The second graphene film is an anode material for an organic light-emitting element in which the intensity of the D band is greater than the intensity of the G band in the Raman spectrum.

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