JP6388934B2 - 放射線イメージング - Google Patents
放射線イメージング Download PDFInfo
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- JP6388934B2 JP6388934B2 JP2016524744A JP2016524744A JP6388934B2 JP 6388934 B2 JP6388934 B2 JP 6388934B2 JP 2016524744 A JP2016524744 A JP 2016524744A JP 2016524744 A JP2016524744 A JP 2016524744A JP 6388934 B2 JP6388934 B2 JP 6388934B2
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- 230000005855 radiation Effects 0.000 title claims description 75
- 238000003384 imaging method Methods 0.000 title claims description 12
- 239000004020 conductor Substances 0.000 claims description 84
- 239000004065 semiconductor Substances 0.000 claims description 44
- 238000000034 method Methods 0.000 claims description 18
- 230000008859 change Effects 0.000 claims description 12
- 230000035945 sensitivity Effects 0.000 claims description 10
- 210000004907 gland Anatomy 0.000 claims 1
- 230000003287 optical effect Effects 0.000 description 30
- 239000000758 substrate Substances 0.000 description 11
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- 229910052751 metal Inorganic materials 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000001960 triggered effect Effects 0.000 description 2
- 239000004986 Cholesteric liquid crystals (ChLC) Substances 0.000 description 1
- 230000009102 absorption Effects 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
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- 239000011159 matrix material Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
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- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B6/00—Apparatus or devices for radiation diagnosis; Apparatus or devices for radiation diagnosis combined with radiation therapy equipment
- A61B6/46—Arrangements for interfacing with the operator or the patient
- A61B6/461—Displaying means of special interest
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
- G01T1/242—Stacked detectors, e.g. for depth information
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136277—Active matrix addressed cells formed on a semiconductor substrate, e.g. of silicon
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/137—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering
- G02F1/139—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering based on orientation effects in which the liquid crystal remains transparent
- G02F1/1391—Bistable or multi-stable liquid crystal cells
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/165—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field
- G02F1/166—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect
- G02F1/167—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect by electrophoresis
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F3/00—Optical logic elements; Optical bistable devices
- G02F3/02—Optical bistable devices
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Molecular Biology (AREA)
- High Energy & Nuclear Physics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Nonlinear Science (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Medical Informatics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Human Computer Interaction (AREA)
- Pathology (AREA)
- Biomedical Technology (AREA)
- Heart & Thoracic Surgery (AREA)
- Surgery (AREA)
- Animal Behavior & Ethology (AREA)
- General Health & Medical Sciences (AREA)
- Public Health (AREA)
- Veterinary Medicine (AREA)
- Radiology & Medical Imaging (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Biophysics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Measurement Of Radiation (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Apparatus For Radiation Diagnosis (AREA)
Description
Claims (17)
- デバイスであって、ディスプレイコンポーネントと、各々が層スタック内で駆動導体へ、パターン化された導体層のペアの導体間に電気的に直列であるそれぞれの放射線感受性チャネルによって接続されるディスプレイピクセル導体のアレイを画定する層スタックを備える駆動コンポーネントとを備え、放射線感受性チャネルが暴露される放射線の強度変化は、放射腺感受性チャネルのコンダクタンスを変化させて、さらにそれぞれの前記ディスプレイピクセル導体における、前記駆動導体へ印加される駆動電圧に対する電位を変化させ、かつそれぞれの前記ディスプレイピクセル導体における電位の変化は、前記ディスプレイコンポーネントのそれぞれのピクセルエリアの表示を変化させる、デバイス。
- 前記放射線は、可視光である、請求項1に記載のデバイス。
- 各放射線感受性チャネルの領域内に一部分を含むシンチレータをさらに備え、前記シンチレータのそれぞれの部分は、第2の異なるタイプの放射線に暴露されると、前記放射線感受性チャネルの対応する1つの前記領域内に、第1のタイプの放射線を発生する、請求項2に記載のデバイス。
- 前記第1のタイプの放射線は、可視光および/または紫外線である、請求項3に記載のデバイス。
- 前記第2の、異なるタイプの放射線は、放射X線である、請求項3または請求項4に記載のデバイス。
- 前記ディスプレイコンポーネントは、双安定ディスプレイ媒体を備え、かつ、前記それぞれのディスプレイピクセル導体における、前記駆動導体へ印加される駆動電圧に対する前記電位の変化は、前記双安定ディスプレイ媒体の前記それぞれのピクセルエリアを、ある安定した表示状態から別の安定した表示状態へ変える、請求項1から請求項5までの任意の請求項に記載のデバイス。
- 前記層スタックは、前記放射線感受性チャネルと容量的に結合される1つまたは複数の導体をさらに備え、前記放射線感受性チャネルの感受性の程度は、1つまたは複数の同調電圧を前記1つまたは複数の導体へ印加することによって調整されることが可能である、請求項1から請求項6までの任意の請求項に記載のデバイス。
- 前記層スタックは、前記放射線感受性チャネルを介して放射線を反射し返すために前記放射線感受性チャネルと前記ディスプレイコンポーネントとの間に位置決めされる、1つまたは複数の反射エレメントを備える、請求項1から請求項7までの任意の請求項に記載のデバイス。
- 請求項1から請求項8までの任意の請求項に記載のデバイスを用いて不可視放射パターンの可視画像を表示する方法。
- 請求項1から請求項8までの任意の請求項に記載のデバイスを用いて不可視放射影の可視画像を表示する方法。
- X線源と、請求項5に記載のデバイスとを備える装置。
- 請求項11に記載の装置を用いて、人体または動物の体の1つまたは複数の内部を画像化する方法。
- 前記デバイスを不可視放射パターンまたは不可視放射影に暴露しながら、前記可視画像を表示することを含む、請求項9または10に記載の方法。
- 前記デバイスの不可視放射パターンまたは不可視放射影への暴露が終了した後、前記可視画像を表示し続けることをさらに含む、請求項13に記載の方法。
- 駆動導体から電源が外された後、前記可視画像を表示し続けることをさらに含む、請求項13または14に記載の方法。
- 前記パターン化された導体層のペアの導体が、駆動導体と浮動導体を含む、請求項1から請求項8までの任意の請求項に記載のデバイス。
- 前記浮動導体が、その電位が、駆動導体へ印加される駆動電圧および導体ペアを接続する半導体チャネルのコンダクタンスに依存するものである、請求項16に記載のデバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1312208.0 | 2013-07-08 | ||
GB1312208.0A GB2516034A (en) | 2013-07-08 | 2013-07-08 | Radiation imaging |
PCT/EP2014/064121 WO2015003981A1 (en) | 2013-07-08 | 2014-07-02 | Radiation imaging |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016533642A JP2016533642A (ja) | 2016-10-27 |
JP6388934B2 true JP6388934B2 (ja) | 2018-09-12 |
Family
ID=49033475
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016524744A Expired - Fee Related JP6388934B2 (ja) | 2013-07-08 | 2014-07-02 | 放射線イメージング |
Country Status (5)
Country | Link |
---|---|
US (1) | US10130319B2 (ja) |
JP (1) | JP6388934B2 (ja) |
CN (1) | CN105474043B (ja) |
GB (2) | GB2516034A (ja) |
WO (1) | WO2015003981A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2526316B (en) * | 2014-05-20 | 2018-10-31 | Flexenable Ltd | Production of transistor arrays |
US10126437B1 (en) * | 2017-05-15 | 2018-11-13 | Prismatic Sensors Ab | Detector for x-ray imaging |
WO2019181570A1 (ja) | 2018-03-19 | 2019-09-26 | 富士フイルム株式会社 | 放射線検出器、放射線画像撮影装置、及び製造方法 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SE449667B (sv) * | 1984-03-19 | 1987-05-11 | Asea Ab | Optoelektronisk anordning for avkenning, registrering, forflyttning, generering och logisk behandling av optisk information |
JP3673567B2 (ja) * | 1994-08-23 | 2005-07-20 | キヤノン株式会社 | 画像入出力装置 |
JPH09252433A (ja) * | 1996-03-15 | 1997-09-22 | Toshiba Corp | 撮像表示装置および撮像表示システム |
US5847499A (en) * | 1997-01-31 | 1998-12-08 | Sunnybrook Hospital | Apparatus for generating multiple X-ray images of an object from a single X-ray exposure |
US6791091B2 (en) * | 2001-06-19 | 2004-09-14 | Brian Rodricks | Wide dynamic range digital imaging system and method |
JP4335025B2 (ja) * | 2004-01-29 | 2009-09-30 | 浜松ホトニクス株式会社 | 放射線イメージセンサおよびその製造方法 |
US7282719B2 (en) * | 2004-09-30 | 2007-10-16 | Canon Kabushiki Kaisha | Image pickup apparatus and radiation image pickup apparatus |
US8063379B2 (en) * | 2006-06-21 | 2011-11-22 | Avraham Suhami | Radiation cameras |
US7608837B2 (en) * | 2006-11-24 | 2009-10-27 | Tower Semiconductor Ltd. | High resolution integrated X-ray CMOS image sensor |
JP2010080636A (ja) * | 2008-09-25 | 2010-04-08 | Fujifilm Corp | 放射線検出素子 |
US7928398B2 (en) * | 2008-12-16 | 2011-04-19 | Morpho Detection, Inc. | Radiation detecting pixel array signal routing |
US8461582B2 (en) * | 2009-03-05 | 2013-06-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
EP2419760A4 (en) * | 2009-04-15 | 2017-06-14 | Applied Materials, Inc. | X-ray imaging apparatus |
CN102099704B (zh) * | 2009-09-28 | 2013-07-03 | 上海奕瑞影像科技有限公司 | 一种x射线图像探测装置 |
US8080805B2 (en) * | 2010-03-09 | 2011-12-20 | International Business Machines Corporation | FET radiation monitor |
WO2012014543A1 (ja) * | 2010-07-30 | 2012-02-02 | 富士フイルム株式会社 | 放射線検出パネル |
EP2617188A4 (en) | 2010-09-13 | 2017-09-13 | Thunder Bay Regional Health Research Institute | Systems and methods for resetting photoconductive x-ray imaging detectors |
CN102401906B (zh) * | 2010-09-19 | 2014-03-12 | 同方威视技术股份有限公司 | 辐射探测器及其成像装置、电极结构和获取图像的方法 |
WO2012057759A1 (en) * | 2010-10-28 | 2012-05-03 | Analogic Corporation | Flat panel detector incorporating silk layer (s) |
US8530848B2 (en) * | 2011-08-22 | 2013-09-10 | Eastman Kodak Company | Radiation-sensitive substrate |
-
2013
- 2013-07-08 GB GB1312208.0A patent/GB2516034A/en not_active Withdrawn
-
2014
- 2014-07-02 US US14/902,870 patent/US10130319B2/en not_active Expired - Fee Related
- 2014-07-02 CN CN201480039050.9A patent/CN105474043B/zh not_active Expired - Fee Related
- 2014-07-02 JP JP2016524744A patent/JP6388934B2/ja not_active Expired - Fee Related
- 2014-07-02 WO PCT/EP2014/064121 patent/WO2015003981A1/en active Application Filing
- 2014-07-02 GB GB1600208.1A patent/GB2530691B/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
GB2530691A (en) | 2016-03-30 |
GB2516034A (en) | 2015-01-14 |
GB2530691B (en) | 2021-05-05 |
WO2015003981A1 (en) | 2015-01-15 |
CN105474043A (zh) | 2016-04-06 |
GB201312208D0 (en) | 2013-08-21 |
CN105474043B (zh) | 2020-01-07 |
US20160183895A1 (en) | 2016-06-30 |
GB201600208D0 (en) | 2016-02-17 |
US10130319B2 (en) | 2018-11-20 |
JP2016533642A (ja) | 2016-10-27 |
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