JP6356243B2 - ポリシリコン製造装置 - Google Patents
ポリシリコン製造装置 Download PDFInfo
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- JP6356243B2 JP6356243B2 JP2016533122A JP2016533122A JP6356243B2 JP 6356243 B2 JP6356243 B2 JP 6356243B2 JP 2016533122 A JP2016533122 A JP 2016533122A JP 2016533122 A JP2016533122 A JP 2016533122A JP 6356243 B2 JP6356243 B2 JP 6356243B2
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims description 89
- 229920005591 polysilicon Polymers 0.000 title claims description 88
- 238000004519 manufacturing process Methods 0.000 title claims description 68
- 239000000758 substrate Substances 0.000 claims description 44
- 238000006243 chemical reaction Methods 0.000 claims description 15
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 12
- 229910002804 graphite Inorganic materials 0.000 claims description 12
- 239000010439 graphite Substances 0.000 claims description 12
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 10
- 239000003575 carbonaceous material Substances 0.000 claims description 9
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 5
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 claims description 5
- 239000005350 fused silica glass Substances 0.000 claims description 5
- 229910052863 mullite Inorganic materials 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 238000000926 separation method Methods 0.000 claims description 3
- 238000002955 isolation Methods 0.000 claims 2
- 230000002093 peripheral effect Effects 0.000 claims 2
- 238000000034 method Methods 0.000 description 9
- 239000007789 gas Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000012423 maintenance Methods 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229920006015 heat resistant resin Polymers 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/24—Stationary reactors without moving elements inside
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J19/087—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/04—Hydrides of silicon
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J2219/0803—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
- B01J2219/0805—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges
- B01J2219/0807—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges involving electrodes
- B01J2219/0809—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges involving electrodes employing two or more electrodes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J2219/0803—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
- B01J2219/0805—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges
- B01J2219/0807—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges involving electrodes
- B01J2219/0815—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges involving electrodes involving stationary electrodes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J2219/0803—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
- B01J2219/0805—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges
- B01J2219/0807—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges involving electrodes
- B01J2219/0824—Details relating to the shape of the electrodes
- B01J2219/0826—Details relating to the shape of the electrodes essentially linear
- B01J2219/0828—Wires
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J2219/0803—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
- B01J2219/0805—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges
- B01J2219/0807—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges involving electrodes
- B01J2219/0837—Details relating to the material of the electrodes
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Silicon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
Description
10…反応チャンバー
11…基板
12…反応器カバー
20…電極
30…フィラメント
40…カバー組立体
41…電極カバー
45、45a、45b…カバーシールド
51…ブッシング
52…スペースリング
60a、60b、60c、60d…電極チャック
Claims (18)
- 基板と反応器カバーを含む反応チャンバーと、
絶縁部材を媒介として前記基板に貫通設置され、電源に連結される少なくとも一対の電極と、
電極チャックにより前記一対の電極のそれぞれに結合し、上端が互いに連結される少なくとも一対のフィラメントと、
前記基板上で前記一対の電極のそれぞれの上面と側面を囲む電極カバー、および前記電極カバーの上面を覆うカバーシールドを備えたカバー組立体と、
を含み、
前記カバーシールドは、黒鉛を含む炭素系物質で形成されるポリシリコン製造装置。 - 前記電極は、前記電極チャックにかみ合わさる突出部を上面に形成し、
前記電極カバーは、前記突出部を収容する開口部を形成し、前記電極の上面の上に配置される水平カバーと、水平カバーの周縁で水平カバーと垂直に連結される垂直カバーとを含む、請求項1に記載のポリシリコン製造装置。 - 前記水平カバーと前記垂直カバーは、個別交換が可能な分離型で構成される、請求項2に記載のポリシリコン製造装置。
- 前記電極カバーは、溶融シリカ(fused silica、SiO2)、窒化ケイ素(Si3N4)、アルミナ(Al2O3)、ジルコニア(ZrO2)、マグネシア(MgO)、およびムライト(3Al2O3・2SiO2)からなる群より選択されたいずれか一つを含む、請求項2に記載のポリシリコン製造装置。
- 前記カバーシールドは、前記突出部を収容する開口部を形成し、前記水平カバーより大きい直径を有する円板形状で形成される、請求項2に記載のポリシリコン製造装置。
- 前記カバーシールドは、前記突出部を収容する開口部を形成し、前記水平カバーの上面を覆う第1シールドと、第1シールドの周縁と連結され、前記垂直カバーの外面を覆う第2シールドとを含む、請求項2に記載のポリシリコン製造装置。
- 前記第1シールドと前記第2シールドは、個別交換が可能な分離型で構成される、請求項6に記載のポリシリコン製造装置。
- 前記カバーシールドは、ポリシリコンの製造後に新品に交換されるか、またはポリシリコン蒸着に影響を与えない限度内で反復使用される、請求項1に記載のポリシリコン製造装置。
- 基板と反応器カバーを含む反応チャンバーと、
絶縁部材を媒介として前記基板に貫通設置され、電源に連結される少なくとも一対の電極と、
電極チャックにより前記一対の電極のそれぞれに結合し、上端が互いに連結される少なくとも一対のフィラメントと、
前記基板上で前記電極の上面と側面を囲む電極カバーと、
を含み、
前記電極チャックは、前記電極カバーの上面を覆う下側端部を含み、
前記電極チャックは、黒鉛を含む炭素系物質で形成されるポリシリコン製造装置。 - 前記電極は、前記電極チャックにかみ合わさる突出部を上面に形成し、
前記電極カバーは、前記突出部を収容する開口部を形成し、前記電極の上面の上に配置される水平カバーと、水平カバーの周縁で水平カバーと垂直に連結される垂直カバーとを含む、請求項9に記載のポリシリコン製造装置。 - 前記水平カバーと前記垂直カバーは、個別交換が可能な分離型で構成される、請求項10に記載のポリシリコン製造装置。
- 前記電極カバーは、溶融シリカ(fused silica、SiO2)、窒化ケイ素(Si3N4)、アルミナ(Al2O3)、ジルコニア(ZrO2)、マグネシア(MgO)、およびムライト(3Al2O3・2SiO2)からなる群より選択されたいずれか一つを含む、請求項10に記載のポリシリコン製造装置。
- 前記電極チャックは、前記フィラメントの端部を固定させるチャックパートと、チャックパートの下に連結されるシールドパートとを含み、
前記シールドパートの直径は、前記チャックパートの最大直径より大きく、前記電極カバーの直径と同一であるかまたはこれより大きい、請求項10乃至12のいずれか一項に記載のポリシリコン製造装置。 - 前記シールドパートの周縁で前記シールドパートと垂直に連結され、前記垂直カバーの外面を覆う補助シールドをさらに含む、請求項13に記載のポリシリコン製造装置。
- 前記補助シールドは、黒鉛を含む炭素系物質で形成され、
前記補助シールドは、前記シールドパートに着脱可能な方式で組み立てられる、請求項14に記載のポリシリコン製造装置。 - 前記電極チャックは、前記フィラメントを固定させる上側端部と、上側端部と前記下側端部を連結する単一傾斜の側面とを含み、
前記下側端部の直径は、前記電極カバーの直径と同一であるかまたはこれより大きい、請求項10乃至12のいずれか一項に記載のポリシリコン製造装置。 - 前記下側端部の周縁で前記下側端部と垂直に連結され、前記垂直カバーの外面を覆う補助シールドをさらに含む、請求項16に記載のポリシリコン製造装置。
- 前記補助シールドは、黒鉛を含む炭素系物質で形成され、
前記補助シールドは、前記下側端部に着脱可能な方式で組み立てられる、請求項17に記載のポリシリコン製造装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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KR1020130141533A KR101590607B1 (ko) | 2013-11-20 | 2013-11-20 | 폴리실리콘 제조 장치 |
KR10-2013-0141533 | 2013-11-20 | ||
PCT/KR2014/011142 WO2015076564A1 (en) | 2013-11-20 | 2014-11-19 | Apparatus for manufacturing polysilicon |
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JP2017501301A JP2017501301A (ja) | 2017-01-12 |
JP6356243B2 true JP6356243B2 (ja) | 2018-07-11 |
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US (1) | US20160280556A1 (ja) |
EP (1) | EP3071322B1 (ja) |
JP (1) | JP6356243B2 (ja) |
KR (1) | KR101590607B1 (ja) |
CN (1) | CN105848774B (ja) |
MY (1) | MY176792A (ja) |
TW (1) | TWI542743B (ja) |
WO (1) | WO2015076564A1 (ja) |
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KR101895538B1 (ko) | 2015-09-08 | 2018-09-05 | 한화케미칼 주식회사 | 폴리실리콘 제조 장치 |
DE102015220127A1 (de) * | 2015-10-15 | 2017-04-20 | Wacker Chemie Ag | Vorrichtung zur Isolierung und Abdichtung von Elektrodenhalterungen in CVD Reaktoren |
JP7106469B2 (ja) * | 2019-02-20 | 2022-07-26 | 信越化学工業株式会社 | 多結晶シリコン製造装置 |
US11702728B2 (en) | 2019-05-28 | 2023-07-18 | Rolls-Royce Corporation | Post deposition heat treatment of coating on ceramic or ceramic matrix composite substrate |
US20210017090A1 (en) * | 2019-07-19 | 2021-01-21 | Rolls-Royce Corporation | Thermal spray deposited coating |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI458854B (zh) * | 2008-06-23 | 2014-11-01 | Gtat Corp | 在化學氣相沉積反應器中用於管絲的夾頭及電橋之連接點 |
US20100101494A1 (en) * | 2008-10-28 | 2010-04-29 | Hsieh Jui Hai Harry | Electrode and chemical vapor deposition apparatus employing the electrode |
US20100147219A1 (en) * | 2008-12-12 | 2010-06-17 | Jui Hai Hsieh | High temperature and high voltage electrode assembly design |
US8399072B2 (en) * | 2009-04-24 | 2013-03-19 | Savi Research, Inc. | Process for improved chemcial vapor deposition of polysilicon |
DE102009021825B3 (de) * | 2009-05-18 | 2010-08-05 | Kgt Graphit Technologie Gmbh | Aufnahmekegel für Silizium-Anzuchtstäbe |
DE102010013043B4 (de) * | 2010-03-26 | 2013-05-29 | Centrotherm Sitec Gmbh | Elektrodenanordnung und CVD-Reaktor oder Hochtemperatur-Gasumwandler mit einer Elektrodenanordnung |
CN102234761A (zh) * | 2010-04-26 | 2011-11-09 | 华东师范大学 | 一种物理气相沉积设备的电接入装置的防护结构 |
DE102011078727A1 (de) * | 2011-07-06 | 2013-01-10 | Wacker Chemie Ag | Schutzvorrichtung für Elektrodenhalterungen in CVD Reaktoren |
JP2013018675A (ja) * | 2011-07-11 | 2013-01-31 | Shin-Etsu Chemical Co Ltd | 多結晶シリコン製造装置 |
KR20130016740A (ko) * | 2011-08-08 | 2013-02-19 | (주)세미머티리얼즈 | 폴리실리콘 제조장치 |
KR101435875B1 (ko) * | 2012-03-12 | 2014-09-01 | (주)아폴로테크 | 폴리실리콘 제조용 흑연척 재활용 방법 |
KR101420338B1 (ko) * | 2012-03-12 | 2014-07-16 | 한국실리콘주식회사 | 씨브이디 반응장치용 절연 슬리브 및 그 절연 슬리브가 구비된 씨브이디 반응장치 |
DE102013204926A1 (de) * | 2013-03-20 | 2014-09-25 | Wacker Chemie Ag | Vorrichtung zum Schutz einer Elektrodendichtung in einem Reaktor zur Abscheidung von polykristallinem Silicium |
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2013
- 2013-11-20 KR KR1020130141533A patent/KR101590607B1/ko active IP Right Grant
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2014
- 2014-11-19 US US15/038,146 patent/US20160280556A1/en not_active Abandoned
- 2014-11-19 WO PCT/KR2014/011142 patent/WO2015076564A1/en active Application Filing
- 2014-11-19 EP EP14864374.5A patent/EP3071322B1/en active Active
- 2014-11-19 MY MYPI2016701830A patent/MY176792A/en unknown
- 2014-11-19 JP JP2016533122A patent/JP6356243B2/ja active Active
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Publication number | Publication date |
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JP2017501301A (ja) | 2017-01-12 |
TWI542743B (zh) | 2016-07-21 |
CN105848774A (zh) | 2016-08-10 |
MY176792A (en) | 2020-08-21 |
KR101590607B1 (ko) | 2016-02-01 |
CN105848774B (zh) | 2018-04-10 |
EP3071322A1 (en) | 2016-09-28 |
US20160280556A1 (en) | 2016-09-29 |
KR20150057768A (ko) | 2015-05-28 |
TW201525207A (zh) | 2015-07-01 |
EP3071322B1 (en) | 2020-09-23 |
EP3071322A4 (en) | 2017-05-24 |
WO2015076564A1 (en) | 2015-05-28 |
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