JP6350983B2 - 電界印加による薄膜の作成方法とこれを用いた薄膜半導体装置 - Google Patents
電界印加による薄膜の作成方法とこれを用いた薄膜半導体装置 Download PDFInfo
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- JP6350983B2 JP6350983B2 JP2014086910A JP2014086910A JP6350983B2 JP 6350983 B2 JP6350983 B2 JP 6350983B2 JP 2014086910 A JP2014086910 A JP 2014086910A JP 2014086910 A JP2014086910 A JP 2014086910A JP 6350983 B2 JP6350983 B2 JP 6350983B2
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- electric field
- thin film
- graphene
- graphene oxide
- film
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- 230000005684 electric field Effects 0.000 title claims description 61
- 239000010409 thin film Substances 0.000 title claims description 27
- 238000004519 manufacturing process Methods 0.000 title description 23
- 239000004065 semiconductor Substances 0.000 title description 16
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 98
- 229910021389 graphene Inorganic materials 0.000 claims description 94
- 238000000034 method Methods 0.000 claims description 42
- 230000008569 process Effects 0.000 claims description 17
- 238000006722 reduction reaction Methods 0.000 claims description 7
- 230000009467 reduction Effects 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 5
- 239000002994 raw material Substances 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 238000002425 crystallisation Methods 0.000 claims 1
- 230000008025 crystallization Effects 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 33
- 239000010408 film Substances 0.000 description 31
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 12
- 238000000609 electron-beam lithography Methods 0.000 description 8
- 239000010931 gold Substances 0.000 description 8
- 239000000725 suspension Substances 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000003054 catalyst Substances 0.000 description 5
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 5
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 5
- 238000001237 Raman spectrum Methods 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 125000004432 carbon atom Chemical group C* 0.000 description 4
- 238000005566 electron beam evaporation Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 3
- 239000004926 polymethyl methacrylate Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
Landscapes
- Thin Film Transistor (AREA)
Description
1)スコッチテープを用いた剥離・転写法、
2)銅触媒とウェットエッチ法による転写法、
3)高価で特殊なSiC基板の還元・転写法、
4)プラズマCVD法によるメタン等からの分解生成法、
5)酸化グラフェンからの還元法、等による作成法の基礎検討が行われてきた。
12 グラフェン
13 ソースードレイン電極
14 ゲート絶縁膜
15 ゲート電極
16 配線
Claims (6)
- 極性(電気双極子)を有する原材料物質を用いて、乾燥、還元、結晶化のいずれか、あるいはその2つ、あるいはそのすべてを行う工程を有する薄膜形成プロセスにおいて、電界を二方向、または三方向から印加することを特徴とする薄膜形成方法。
- 原材料物質が電気双極子の方向と垂直方向に非対称性を有することを特徴とする請求項1に記載の薄膜形成方法。
- 電界を印加する方向の内、少なくとも一方向はステップ状に強度が変動する電界または交流電界であること特徴とする請求項1乃至2に記載の薄膜形成方法。
- 電界を印加する方向の内、少なくとも一方向には直流電界を印加し、少なくとも他の一方向から交流電界を印加することを特徴とする請求項1乃至3に記載の薄膜形成方法。
- 電界を印加する方向の内、少なくとも一方向は直流電界で、少なくとも他の一方向が交流電界であることにより、これらの合成電界がある方向を中心として首振り運動をすることを特徴とする請求項1乃至4に記載の薄膜形成方法。
- 原材料物質が酸化グラフェンであることを特徴とする請求項1乃至5に記載の薄膜形成方法。
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JP2014086910A JP6350983B2 (ja) | 2014-04-18 | 2014-04-18 | 電界印加による薄膜の作成方法とこれを用いた薄膜半導体装置 |
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JP2014086910A JP6350983B2 (ja) | 2014-04-18 | 2014-04-18 | 電界印加による薄膜の作成方法とこれを用いた薄膜半導体装置 |
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JP2015207643A JP2015207643A (ja) | 2015-11-19 |
JP6350983B2 true JP6350983B2 (ja) | 2018-07-04 |
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CN115818633A (zh) * | 2022-12-29 | 2023-03-21 | 常州富烯科技股份有限公司 | 定向氧化石墨烯膜及其制备方法 |
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US7619257B2 (en) * | 2006-02-16 | 2009-11-17 | Alcatel-Lucent Usa Inc. | Devices including graphene layers epitaxially grown on single crystal substrates |
JP5135825B2 (ja) * | 2007-02-21 | 2013-02-06 | 富士通株式会社 | グラフェントランジスタ及びその製造方法 |
JP6019640B2 (ja) * | 2011-03-23 | 2016-11-02 | 富士通株式会社 | 電子デバイス及びその製造方法 |
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