JP6349903B2 - Semiconductor device - Google Patents

Description

  The present invention relates to a semiconductor device having high reliability even at high temperature operation.

  In recent years, semiconductor package materials are required to have heat resistance excellent in stability and reliability under high temperature and high humidity. For example, in hybrid vehicles, electric vehicles, electric railways, and distributed power supplies, power semiconductors are often used for inverters, but the power density is remarkably improved, and the package material is exposed to high temperatures. In addition, electronics control units (ECUs) that use ordinary semiconductor chips used in the car electronics field have also been installed in the vehicle compartment until now, but they are in the direction of being installed in more severe engine rooms. High heat resistance is required. Furthermore, silicon carbide (SiC) semiconductors are beginning to be applied, and it is expected that the number of uses for operating at 200 ° C. or higher will increase in the future.

  It is important that the reliability of the power semiconductor device is not impaired even under such use conditions. In particular, it is important to ensure heat dissipation from the semiconductor chip, connection reliability of the chip bonding material, and the like. For this reason, the semiconductor which improved the heat dissipation of a silicon semiconductor chip and the reliability with respect to the thermal fatigue of a joining material by sealing the whole board | substrate containing a semiconductor chip, a wire, etc. with a transfer mold resin as shown in patent document 1 A device has been proposed.

JP 2004-165281 A

  However, since deterioration due to decomposition of the resin is likely to proceed at 200 ° C. or higher, there is a concern about deterioration of mechanical properties such as a sealing material (hereinafter referred to as “encapsulated resin cured product”). In addition, since the adhesive force tends to decrease at high temperatures, there is a concern that the encapsulated resin cured product may peel from the semiconductor element, the lead frame, or the like.

  Moreover, solder is widely used as a bonding material for semiconductor elements, but solder is easily deteriorated due to the formation of intermetallic compounds or the like when exposed to a high temperature for a long time even at a temperature below the melting temperature. Therefore, there is a concern about solder connection reliability in a high temperature environment of 200 ° C. or higher.

  In view of the above, an object of the present invention is to solve these problems and provide a highly reliable semiconductor device in a high temperature environment.

The present invention is as follows.
[1] A semiconductor element, a lead frame bonded to the semiconductor element, a bonding material for bonding the semiconductor element and the lead frame, and a seal for sealing the semiconductor element, the bonding material, and a part of the lead frame. A cured resin, wherein the bonding material includes a silver particle sintered body, and the glass transition temperature of the encapsulated resin cured product is 200 ° C. or higher, and the elastic modulus at 50 ° C. is 10 to 10. 20 GPa, a semiconductor device whose linear expansion coefficient in a glass region is 9 × 10 ^{−6 to} 24 × 10 ⁻⁶ / ° C.
[2] The semiconductor device according to Item 1, wherein the density of the bonding material including the silver particle sintered body is 50 to 100%.
[3] The semiconductor device according to Item 1 or 2, wherein the thickness of the bonding material including the silver particle sintered body is 5 to 50 μm.
[4] The semiconductor device according to any one of Items 1 to 3, wherein the encapsulated resin cured product is a cured product of a thermosetting resin containing an epoxy resin and an inorganic filler.
[5] The semiconductor device according to any one of Items 1 to 4, wherein the cured sealing resin is sealed by a transfer molding process.
[6] The semiconductor device according to any one of Items 1 to 5, wherein the semiconductor device further includes a primer resin, and the primer resin is formed on a surface opposite to a bonding surface of the semiconductor element with the lead frame. apparatus.
[7] The semiconductor device according to any one of Items 1 to 6, wherein the primer resin has a glass transition temperature of 200 ° C. or higher.
[8] The semiconductor device according to any one of Items 1 to 7, wherein the primer resin has a thickness of 0.1 to 20 μm.
[9] The semiconductor device according to any one of Items 1 to 8, wherein the primer resin is a polyamide resin or a polyamideimide resin.
[10] The semiconductor device according to any one of Items 1 to 9, wherein the primer resin is a thermoplastic resin.

  ADVANTAGE OF THE INVENTION According to this invention, the semiconductor device excellent in the reliability in a high temperature environment can be provided.

It is a cross-sectional schematic diagram of the Si p / n diode package according to the present invention. It is a cross-sectional schematic diagram of the Si TEG package according to the present invention.

In this specification, the term “process” is not limited to an independent process, and is included in the term if the intended purpose of the process is achieved even when it cannot be clearly distinguished from other processes. .
In the present specification, “to” indicates a range including the numerical values described before and after the values as a minimum value and a maximum value, respectively.
Furthermore, in this specification, the amount of each component in the composition is the total amount of the plurality of substances present in the composition unless there is a specific indication when there are a plurality of substances corresponding to each component in the composition. means.

  Hereinafter, examples of embodiments of the present invention will be described.

  In the present embodiment, the heat block and the outer lead that are part of the lead frame are made of a metal such as Cu. The heat block and the outer lead may be plated with Ni, Ag, or the like in order to prevent oxidation and improve the adhesive force with the bonding material. Further, a part of the heat block or the outer lead may be plated, for example, Ni plating is performed on the entire surface, but Ag plating may be performed only on the joining portion. Since the joining of the semiconductor element and the lead frame in the present invention utilizes the sintering phenomenon of silver particles, it is better to apply the Ag plating to the joining portion of the heat block than to the case of Ni plating or Cu. However, the adhesive strength of the bonding material can be improved. Moreover, since a part of heat block and an outer lead are sealed, you may select the kind of plating for the purpose of the adhesive force improvement with sealing resin hardened | cured material.

The semiconductor element is bonded to a heat block that is a part of the lead frame. The bonding material of the present invention includes a sintered silver bonding material including a silver particle sintered body produced by utilizing the sintering phenomenon of the silver particle adhesive composition (hereinafter sometimes simply referred to as “bonding material”). Is used. Usually bonded by solder, but by using a sintered silver bonding material with higher heat resistance than solder, high connection even when the semiconductor element operates at high temperature or the environment where the semiconductor device is exposed to high temperature Reliability is obtained. Furthermore, since the sintered silver bonding material is mainly composed of silver, it has higher thermal conductivity and higher electrical conductivity than solder. As a result, a semiconductor device in which semiconductor elements are bonded with a sintered silver bonding material is easier to dissipate the heat of the semiconductor element than a solder-bonded semiconductor device when the same current is applied, and the forward voltage is reduced. To do. As a result, heat dissipation is high and the amount of Joule heat generated around the chip is reduced, so that the maximum junction temperature (T _jmax ) reached by the semiconductor element is lowered.

  The method for forming the silver particle adhesive composition layer on the heat block may be formed by a normal printing method such as screen printing, or may be formed by a coating method such as spraying, and the solvent is dried in advance. Aggregated silver particles may be provided. Sintered silver containing a silver particle sintered body by placing a semiconductor element on this silver particle adhesive composition layer and sintering the silver particle adhesive composition by heating in a pressurized or non-pressurized state. A bonding material can be obtained.

  In the present invention, a sintered silver bonding material heated in a pressurized state is described as an example, but the pressure condition is in the range of 0.1 to 30 MPa and the temperature condition is in the range of 150 to 300 ° C. A bonding material can be obtained. Furthermore, the higher the pressurization pressure and the higher the heating temperature, the higher the density of the sintered silver, that is, the total volume of residual voids in the bonding material decreases. The density of the obtained sintered silver bonding material is preferably in the range of 50 to 100%, more preferably in the range of 60 to 99%, further preferably in the range of 65 to 99%, and particularly preferably in the range of 70 to 98%. . When the density of the sintered silver bonding material is lower than this range, it is considered that the mechanical strength of the sintered silver bonding material becomes too low and the connection reliability is lowered. Further, when the density of the sintered silver bonding material is higher than this range, higher temperature and higher pressure are required for bonding, and there is a concern about deterioration of the semiconductor element and mechanical damage.

  The density of the sintered silver bonding material can be evaluated by observing a cross section of the bonding material. First, the package is cut and the cross section is mirror-polished. Furthermore, it is desirable to perform cross-section processing using an FIB (Focused Ion Beam, FB-2000A manufactured by Hitachi, Ltd.) apparatus, a CP (Cross Section Polisher) apparatus, or an ion milling apparatus. By these processes, it is possible to obtain a smooth and cross-section free from processing distortion and sagging. Thereafter, by observing the cross section of the bonding material by SEM (Scanning Electron Microscope) or SIM (Scanning Ion Microscope), it is possible to observe the distribution of voids (residual voids) remaining in the bonding material during the sintering process. it can. In the image observed by SEM or SIM, residual voids were painted black with image processing software, the sintered silver portion was painted white, and the image was binarized. The area ratio of the white part (sintered silver part) to the binarized bonding material part was evaluated as the density of the sintered silver.

  The thickness of the sintered silver bonding material is preferably in the range of 5 to 50 μm, more preferably in the range of 8 to 50 μm, further preferably in the range of 10 to 40 μm or less, and particularly preferably in the range of 15 to 40 μm. When the sintered silver bonding material is thinner than this range, the stress and plastic strain of the sintered silver bonding material tend to increase, and the sintered silver bonding material tends to deteriorate. Moreover, in order to obtain a sintered silver bonding material thicker than this range, it becomes difficult to form a thick silver particle adhesive composition layer by printing or the like. Therefore, when the sintered silver bonding material is thicker than this range, the method for forming the silver particle adhesive composition layer is restricted, which is not preferable.

  A wiring material is connected to the surface of the semiconductor element opposite to the bonding surface with the heat block (a part of the lead frame) by wire bonding or ribbon bonding. Alternatively, the outer leads may be connected by a bonding material such as solder. A metal such as Al or Cu is usually used for the wire and ribbon, but it is not particularly limited as long as it is a method of connecting a wiring material without damaging the semiconductor element.

The semiconductor element, the sintered silver bonding material, the wiring material, a part of the heat block, and a part of the outer lead are sealed with a cured sealing resin. The semiconductor element is often Si, and its linear expansion coefficient is as small as about 3 × 10 ⁻⁶ / ° C. On the other hand, lead frames and wiring materials are often Cu and Al, and the coefficient of linear expansion is as large as 17 × 10 ⁻⁶ / ° C. for Cu and 24 × 10 ⁻⁶ / ° C. for Al. Due to the thermal stress generated by the difference between these linear expansion coefficients, the deterioration of the bonding material, the wiring material connecting portion, and the semiconductor element occur. The encapsulated resin cured product has an effect of suppressing thermal deformation of a material having a large linear expansion coefficient such as a wiring material or a heat block, and further facilitating thermal deformation of a material having a small linear expansion coefficient such as a semiconductor element. As a result, the thermal stress caused by the linear expansion coefficient is reduced, and deterioration of the bonding material, the wiring material connecting portion, and the semiconductor element is suppressed, so that the reliability of the semiconductor device can be improved.

  When the sintered silver bonding material which is the bonding material of the present invention is used, the elastic modulus (sometimes referred to as “E”) and linear expansion coefficient (“may be referred to as“ E ”) that can improve the high temperature reliability of the semiconductor device. CTE ”))). The elastic modulus at 50 ° C. is preferably in the range of 10 to 20 GPa, more preferably in the range of 10 to 19 GPa, further preferably in the range of 11 to 18 GPa, and particularly preferably in the range of 12 to 17 GPa. If the elastic modulus is lower than this range, it is insufficient to suppress the thermal deformation of the members other than the cured cured resin. If the elastic modulus is higher than this range, the stress on the bonding material is too high. It is thought that deterioration is likely to proceed.

The glass transition temperature or lower of the cured resin resin, that is, the linear expansion coefficient in the glass region is preferably in the range of 9 × 10 ^{−6 to} 24 × 10 ⁻⁶ / ° C., and 9 × 10 ^{−6 to} 22 × 10 ^−6. The range of 10 ° C./° C. is more preferable, the range of 10 × 10 ^{−6 to} 20 × 10 ⁻⁶ / ° C. is more preferable, and the range of 11 × 10 ⁻⁶ to 18 × 10 ⁻⁶ / ° C. is particularly preferable. If the linear expansion coefficient is lower than this range, the difference between the linear expansion coefficient of the metal material such as the lead frame and the wire and the linear expansion coefficient of the cured resin product becomes too large, and for example, deterioration of the wire connection portion easily proceeds. Also, if the linear expansion coefficient is larger than this range, the difference between the linear expansion coefficient of the semiconductor element and the cured resin resin becomes too large, and the deterioration of the semiconductor element or the bonding material is likely to progress, thereby reducing the reliability of the semiconductor device. There is a tendency to make it.

  The glass transition temperature (sometimes referred to as “Tg”) of the encapsulated resin cured product is preferably 195 ° C. or higher, more preferably 200 ° C. or higher, further preferably 205 ° C. or higher, and particularly preferably 210 ° C. or higher. A glass transition temperature lower than this range is not preferable because a decrease in elastic modulus or an increase in linear expansion coefficient occurs in a temperature environment exceeding 200 ° C., which tends to deviate from the above-mentioned preferable range.

  The encapsulated resin cured product may be a cured product of a thermosetting resin (encapsulating resin) containing an epoxy resin and an inorganic filler.

  Examples of the epoxy resin used for the sealing resin include bisphenol A type, bisphenol F type, bisphenol S type, naphthalene type, phenol novolak type, cresol novolak type, dihydroxybenzene novolak type, phenol aralkyl type, biphenyl type, dicyclopentadiene. Type, glycidyl ester type, glycidyl amine type, hydantoin type, isocyanurate type, and trisphenol methane type epoxy resin. These epoxy resins can be used alone or in combination of two or more.

  Examples of the inorganic filler used for the sealing resin include fused silica, crystalline silica, glass, alumina, calcium carbonate, zirconium silicate, calcium silicate, silicon nitride, aluminum nitride, boron nitride, beryllia, zirconia, zircon, fosterite, steer. Fine powder such as tight, spinel, mullite, titania, talc, clay, mica, etc., aluminum hydroxide, magnesium hydroxide, composite metal hydroxide such as magnesium hydroxide and zinc composite hydroxide, zinc borate, zinc molybdate etc. Can be used. The content of the inorganic filler is preferably set in the range of 50 to 95% by weight of the entire epoxy resin composition. If it is less than 50% by weight, it tends to be difficult to obtain desirable physical properties, and if it exceeds 95% by weight, the fluidity tends to decrease and the moldability tends to decrease.

  In addition to the epoxy resin and the inorganic filler, a curing agent, a curing accelerator, a flame retardant, a release agent, an adhesion imparting agent, and the like may be added to the sealing resin as necessary.

  The curing agent used for the sealing resin has an effect as a curing agent for the epoxy resin, and is not particularly limited. Monomers, oligomers, polymers in general having two or more phenolic hydroxyl groups in one molecule, There are acid anhydrides. For example, phenols such as phenol, cresol, resorcinol, catechol, bisphenol A, bisphenol F, phenylphenol, aminophenol and / or naphthols such as α-naphthol, β-naphthol, dihydroxynaphthalene, and formaldehyde, benzaldehyde, salicylaldehyde Novolak-type phenolic resin obtained by condensation or cocondensation with a compound having an aldehyde group such as an acid catalyst; synthesized from phenols and / or naphthols and dimethoxyparaxylene or bis (methoxymethyl) biphenyl Aralkyl type phenol resins such as phenol aralkyl resins, biphenylene type phenol aralkyl resins, naphthol aralkyl resins; phenols and / or naphthols and dicyclo Dicyclopentadiene-type phenolic resins such as dicyclopentadiene-type phenol novolak resins and dicyclopentadiene-type naphthol novolak resins synthesized by copolymerization with pentadiene; triphenylmethane-type phenol resins; terpene-modified phenol resins; paraxylylene and / or metaxylylene Modified phenol resins; melamine modified phenol resins; cyclopentadiene modified phenol resins; phenol resins obtained by copolymerizing two or more of these, naphthalenediol aralkyl resins, and the like can be used.

  As the curing agent accelerator used for the sealing resin, 1,8-diazabicyclo [5.4.0] undecene-7, 1,5-diazabicyclo [4.3.0] nonene-5, 5,6-dibutylamino Cycloamidine compounds such as -1,8-diazabicyclo [5.4.0] undecene-7 and these compounds include maleic anhydride, 1,4-benzoquinone, 2,5-toluquinone, 1,4-naphthoquinone, 2, Quinone compounds such as 3-dimethylbenzoquinone, 2,6-dimethylbenzoquinone, 2,3-dimethoxy-5-methyl-1,4benzoquinone, 2,3-dimethoxy-1,4-benzoquinone, and phenyl-1,4-benzoquinone A compound having intramolecular polarization formed by adding a compound having a π bond such as diazophenylmethane or phenol resin; benzyldimethylamine, trie Tertiary amines such as noramine, dimethylaminoethanol, tris (dimethylaminomethyl) phenol and derivatives thereof; 2-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 2-heptadecylimidazole, etc. Imidazoles and derivatives thereof; organic phosphines such as tributylphosphine, methyldiphenylphosphine, triphenylphosphine, tris (4-methylphenyl) phosphine, tris (4-butylphenyl) phosphine, diphenylphosphine, phenylphosphine and the like, and phosphines thereof Phosphorus compounds having intramolecular polarization formed by adding a compound having a π bond, such as maleic anhydride, the above quinone compound, diazophenylmethane, phenol resin, etc .; tetraphenylphospho Um tetraphenylborate, triphenyl phosphine tetraphenyl borate, 2-ethyl-4-methylimidazole tetraphenyl borate, tetraphenyl boron salts and derivatives thereof such as N- methylmorpholine tetraphenylborate; and the like. Even if these 1 type is used independently, it can be used in combination of 2 or more types.

  Examples of various additives used for the sealing resin include flame retardants, mold release agents, and adhesion imparting agents.

  Examples of the flame retardant used for the sealing resin include known organic or inorganic compounds and metal hydroxides containing a halogen atom, an antimony atom, a nitrogen atom or a phosphorus atom. These may be used alone or in combination of two or more.

  Examples of the mold release agent used for the sealing resin include carnauba wax, higher fatty acids such as montanic acid and stearic acid, higher fatty acid metal salts, ester waxes such as montanic acid esters, and polyolefin waxes such as polyethylene oxide and non-oxidized polyethylene. Even if these 1 type is used independently, 2 or more types can be used in combination.

  The adhesion-imparting agent used in the sealing resin is not particularly limited, and various silane coupling agents can be used. Various silane compounds such as epoxy silane, mercapto silane, amino silane, alkyl silane, ureido silane, and vinyl silane. Well-known coupling agents such as titanium compounds, aluminum chelates, and aluminum / zirconium compounds can be used alone or in combination of two or more.

  As a method for forming the cured sealing resin, a method of sealing the sealing resin by a transfer molding process can be used.

  By forming the primer resin for a cured cured resin of the present invention on a semiconductor element, a bonding material, a wiring material, a part of a heat block, and a part of an outer lead, the adhesive force with the cured cured resin can be increased. Can be improved. By maintaining adhesion between the cured sealing resin and the semiconductor element, the effect of increasing the thermal deformation of the semiconductor element is maintained, deterioration of the semiconductor element and the bonding material is suppressed, and the reliability of the semiconductor device can be improved. Further, by maintaining the adhesion between the cured resin resin and the heat block, the effect of restraining the heat deformation of the heat block by the cured resin resin is maintained, and the deterioration of the semiconductor element and the bonding material is suppressed. Can improve the reliability. By maintaining the adhesion between the cured sealing resin and the wiring material, the effect of suppressing the thermal deformation of the wiring material can be maintained, and deterioration of the connection portion of the wiring material to the semiconductor element can be suppressed.

  Formation of the primer resin for the encapsulated resin cured product can be performed by a known coating method such as screen printing, dispensing coating, brush coating, or the like. The thickness after drying the solvent is preferably from 0.1 to 20 μm, more preferably from 0.2 to 15 μm, still more preferably from 0.3 to 10 μm, particularly preferably from 0.5 to 7 μm. If it is thinner than this range, the adhesive force tends to decrease, which is not preferable because the effect of maintaining the adhesion between the encapsulated resin cured product and the semiconductor element and other members tends to decrease. When the thickness is larger than this range, the solvent is difficult to dry, and the solvent is likely to remain in the formed primer resin layer, which is not preferable because the adhesion reliability of the cured sealing resin in the reliability test is likely to be lowered.

  The glass transition temperature of the primer resin for cured sealing resin is preferably 200 ° C. or higher, more preferably 210 ° C. or higher, further preferably 220 ° C. or higher, and particularly preferably 230 ° C. or higher. If the glass transition temperature is lower than this range, the adhesive force tends to be lowered in a temperature environment exceeding 200 ° C., and the effect of maintaining the adhesion between the cured resin product and the semiconductor element and other members tends to be lowered.

  Examples of the primer resin having a glass transition temperature of 200 ° C. or higher include polyimide resins, polyamideimide resins, polyamide resins, and modified products thereof. A polyimide resin, polyamideimide resin, polyamide resin, or a modified product thereof used for a surface protective material or an interlayer insulating film of a semiconductor element can be suitably used as a primer resin for a cured cured resin of the present invention. . However, polyimide resin needs to be imidized after being formed on a semiconductor element or the like with an appropriate thickness. As a result, since the polyimide resin is cured at a high temperature of 300 ° C. or higher, problems such as thermal deterioration of semiconductor elements and bonding materials and oxidation of heat blocks and the like are likely to occur. Therefore, a polyamide resin or a polyamideimide resin that can be cured at 300 ° C. or lower can be more preferably used as the primer resin. Furthermore, the use of a thermoplastic polyamide resin or polyamideimide resin eliminates the need for a curing step at a high temperature, and the primer resin can be formed only by a solvent drying step at 200 ° C. or lower. Examples of such a thermoplastic primer resin include HIMAL ("HIMAL" is a registered trademark) manufactured by Hitachi Chemical Co., Ltd., and can be suitably used.

  Note that silicon (Si), silicon carbide (SiC), and gallium nitride (GaN) can be used for the semiconductor element without any particular limitation. Further, the semiconductor elements are particularly limited from memory-type and logic-type ICs to power semiconductors such as diodes, Insulated Gate Bipolar Transistors (IGBTs), Metal-Oxide-Semiconductor Field-Effect-Transistors (MOS-FETs). It can be used without. In particular, since power semiconductors are easily exposed to high temperature environments, they can be suitably used as the semiconductor element of the present invention.

  The shape and the like of the semiconductor device of the present invention are not particularly limited. For example, when a power semiconductor element is used, it can be used as a package called a discrete package or a power module.

  EXAMPLES Hereinafter, although an Example demonstrates this invention in detail, this invention is not restrict | limited by this.

[Example 1]
(Preparation of silver particle adhesive composition)
A silver particle adhesive composition was prepared by the following steps. First, 12 parts by mass of DPMA (manufactured by Daicel Industries, Ltd., dipropylene glycol methyl ether acetate), 12 parts by mass of MTPH (manufactured by Nippon Terpene Chemical Co., Ltd., isobornylcyclohexanol), and 0.88 parts by mass of stearic acid The mixture was kneaded for 10 minutes with a paddle to obtain a liquid component. To this liquid component, 44 parts by mass of flaky silver particles (Fukuda Metal Foil Powder Co., Ltd., AgC-239) and 44 parts by mass of spherical silver particles (Metal Technology Co., Ltd., K-0082P) can be added. The mixture was kneaded for 15 minutes to obtain a silver particle adhesive composition.

(Formation of silver particle adhesive composition layer)
As a lead frame, a Cu lead frame on which 4 μm thick Ag plating was formed was prepared. A metal mask with a gap of 40 μm is placed on the heat block of the Cu lead frame (length 24 mm × width 19 mm × thickness 3 mm), and sintered silver paste (silver particle adhesive composition) is in the range of 10.5 mm length × 8 mm width Screen printed. Next, the Cu lead frame was heated on a hot plate at 160 ° C. for 180 seconds to form a silver particle adhesive composition layer.

(Joint process with silver particle adhesive composition layer)
A negative electrode side of a Si p / n diode chip (length 8.5 mm × width 6 mm × thickness 0.6 mm, anode outermost surface: Al, cathode outermost surface: Au), which is a semiconductor element, and a silver particle adhesive composition layer A Si p / n diode chip was placed on the silver particle adhesive composition layer so as to make contact, and a sample for pressure bonding was prepared. Here, the Si p / n diode chip refers to a pn junction diode using Si. Hereinafter, the “Sip / n diode chip” may be simply referred to as “chip”. The crimping sample was pressurized at 20 MPa for 10 minutes with a stainless steel stage and a stainless steel head heated to 300 ° C., and the Si p / n diode chip was joined to a heat block that is a part of the Cu lead frame. This bonding material is referred to as “sintered silver bonding material”. A Teflon sheet (thickness: 1 mm, “Teflon” is a registered trademark) was sandwiched between the anode surface of the Si p / n diode chip and the stainless steel head during pressurization to protect the Si p / n diode chip.

(Wire bonding)
The anode surface (surface opposite to the bonding surface with the lead frame) of the Si p / n diode chip and the positive outer lead were connected by 18 Al wires having a diameter of 400 μm. The Al wire was connected by pressing the Al wire against the Al anode of the Si p / n diode chip while applying ultrasonic waves with a wire bonder.

(Formation of primer resin)
In the sample after bonding, a primer resin was formed on all exposed surfaces of the Si p / n diode chip and the Al wire and on the portion where the heat block and the outer lead were sealed. HIMAL (HL-1210-H0001, glass transition temperature 260 ° C., N-methyl-2-pyrrolidone 40% by mass of polyamidoimide resin / 60% by mass of ethylene glycol monobutyl ether) was used as the primer resin coating solution. Solvent solution) and applied by brush. Then, it heated on a 100 degreeC hotplate for 5 minutes, and also heated on a 200 degreeC hotplate for 1 hour, the solvent was dried from the coating film, and 5 micrometer-thick primer resin was formed.

(Preparation of sealing resin)
100 parts by mass of epoxy resin (1032H60) manufactured by Mitsubishi Chemical Corporation (former Japan Epoxy Resin Co., Ltd.) as the epoxy resin, and phenol resin (SN-395) manufactured by Nippon Steel Chemical Co., Ltd. (former Toto Kasei Co., Ltd.) as the phenol resin A ) As an antioxidant, 5 parts by weight of a hindered phenolic antioxidant (manufactured by ADEKA, AO-60), and an addition reaction product of triphenylphosphine and 1,4-benzoquinone as a curing accelerator 2 parts by mass, 1023 parts by mass of spherical fused silica having an average particle size (D50) of 17.5 μm and a specific surface area of 3.8 m ² / g as an inorganic filler, and epoxysilane (γ-glycidoxypropyltrimethoxy as a coupling agent 11 parts by mass of silane and carbon black as a colorant (manufactured by Mitsubishi Chemical Corporation, trade name “MA-1”) 0 ") and 2.6 parts by weight of carnauba wax (manufactured by Celerica NODA Co., Ltd.) as a release agent, and a kneading temperature of 80 ° C and a kneading time of 15 minutes. Sealing resin A was produced.

(Evaluation of glass transition temperature of cured encapsulated resin)
Using a mold for molding a test piece of length 80 mm × width 10 mm × thickness 3 mm, sealing is performed using a ton-laser mold apparatus, mold temperature 180 ° C., molding pressure 6.9 MPa, curing heating time In 90 seconds, a test piece of the cured encapsulated resin was molded and further after-cured at 200 ° C. for 6 hours. Next, the test piece was cut into a length of 50 mm, a width of 5 mm, and a thickness of 3 mm using a diamond cutter, and a viscoelasticity measuring device RSA3 (manufactured by TA Instruments Co., Ltd.) was used. The measurement was performed under the conditions of minute and frequency of 6.28 rad / sec. The temperature at which tan δ was maximized was evaluated as the glass transition temperature, and is shown in Table 1.

(Evaluation of elastic modulus of cured cured resin)
A sample produced in the same manner as the measurement sample of the glass transition temperature was used as the elastic modulus measurement sample. This sample was measured using a viscoelasticity measuring device RSA3 (TA Instruments Co., Ltd.) in a three-point bending mode under conditions of a temperature rising rate of 5 ° C./min and a frequency of 6.28 rad / sec. The evaluation results of the elastic modulus (E) at 50 ° C. are shown in Table 1.

(Evaluation of linear expansion coefficient of cured encapsulated resin)
A sample prepared in the same manner as the measurement sample of the glass transition temperature was used except that a mold for molding a test piece of length 20 mm × width 3 mm × thickness 3 mm was used. Measured by thermal mechanical analysis (TMA) (manufactured by Seiko Instruments Inc., EXSTAR TMA / SS6000) at a heating rate of 5 ° C./min in compression mode, the TMA curve obtained was 40-60 ° C. (below the glass transition temperature) The linear expansion coefficient was calculated from the slope at (temperature). The obtained results are shown in Table 1.

(Package sealing process)
In the sample after forming the primer resin, the entire surface of the Si p / n diode chip and the Al wire, and the portion where the heat block and the outer lead primer resin were formed were sealed with the sealing resin A. Sealing was performed by using a ton-laser mold apparatus at a mold temperature of 180 ° C., a molding pressure of 6.9 MPa, and a curing heating time of 90 seconds. Then, hardening of sealing resin was completed by heating the sample after sealing for 6 hours in 200 degreeC oven. Finally, the outer lead was cut, and a Si p / n diode package in which the outer shape of the encapsulated resin cured product was 50 mm long × 30 mm wide × 9 mm thick was produced. By repeating the above steps, two Si p / n diode packages were produced. FIG. 1 shows a schematic cross-sectional view of a Si p / n diode package 1 (hereinafter simply referred to as “package”) which is a manufactured semiconductor device.

(Dense density evaluation of sintered silver bonding material)
After cutting the first Sip / n package and polishing the cross section to a mirror surface, the periphery of the sintered silver bonding material is processed by FIB (Focused Ion Beam, FB-2000A manufactured by Hitachi, Ltd.) The cross section was observed with a SIM (Scanning Ion Microscope) of the same apparatus. In the cross-sectional image of the obtained sintered silver bonding material, residual voids were painted black by image processing software, and the image was binarized. The area ratio of the white part of the binarized image of the sintered silver bonding material part was evaluated as the density of the sintered silver. The density of the obtained sintered silver bonding material is shown in Table 1.

(Evaluation of temperature dependence of package on minute voltage)
Put The second Si p / n diode package in a constant temperature bath, a small current I _C is energized 1A, 1 sec, the + side and the lead frame - to measure minute voltage V _j to be generated between the side lead frame. V _j was measured at each temperature of 25 ° C., 50 ° C., 100 ° C., 150 ° C., and 200 ° C., and the temperature dependence of V _j was determined.

(Evaluation of initial package characteristics)
To a copper cooling block (length 100 mm × width 100 mm × thickness 20 mm) adjusted in temperature by cooling water at 25 ° C., a heat radiation sheet (TC-100TXS, manufactured by Shin-Etsu Chemical Co., Ltd., thermal conductivity 5 Wm ⁻¹ K ⁻¹ , A Si p / n diode package was placed so that the exposed surface of the heat block of the Si p / n diode package was in contact with the heat dissipation sheet. A glass epoxy plate (length 80 mm × width 20 mm × thickness 1 mm) was placed on the top surface of the Si p / n diode package, and the glass epoxy plate and the copper cooling block were sandwiched by clips to fix the Si p / n diode package.

+ From the side outer lead - is 220A energizing current _{I ON} in the side outer leads, the conduction is stopped after 1.1 seconds. At that time, the voltage generated on both sides of the positive outer lead and the negative outer lead was measured with an oscilloscope. Average voltage during the energization time was evaluated as the forward voltage V _ON. Also, the minute current I _C and 1A energized immediately after energization and immediately before energization of I _ON, + side outer leads and - to measure the minute voltage V _j to be generated on both sides of the side outer leads an oscilloscope. Using the temperature dependence of V _j, determine the minimum junction temperature _{T jmin} from 10 ms before _{V j} of the start of energization to determine the minimum junction temperature _{T jmax} from _{V j} after 1 millisecond from the energization stopped. V _ON was divided by a temperature difference ΔT _j obtained by subtracting T _jmin from T _jmax to obtain a thermal resistance _RT . The initial characteristics of these Si p / n diode packages are shown in Table 1. The forward resistance was obtained by dividing V _ON by I _ON .

(Package power cycle test)
The Si p / n diode package was fixed as in the initial characteristic evaluation. + From the side outer lead - the current _{I ON} in the side outer leads 220A, energized 1.7 seconds, then de-energized for 13 seconds. This was one power cycle, and the start and stop of energization were repeated until the lifetime was reached under the above conditions. While continuing the power cycle test, the power cycle 100 th the _{T jmax} and results of measurement of _{T jmin} when the were about 200 ° C. and about 40 ° C., respectively. The number of power cycles when T _jmax measured while continuing this power cycle test exceeded 220 ° C. was evaluated as the power cycle life. The obtained power cycle life (PC life) is shown in Table 1.

[Example 2]
A Si p / n diode package was produced in the same manner as in Example 1 except that the pressurizing pressure was changed to 15 MPa in the joining step using the silver particle adhesive composition layer of Example 1. Further, as in Example 1, the density of the sintered silver bonding material, the initial characteristics of the package, and the power cycle life were evaluated, and the results are shown in Table 1.

[Example 3]
A Si p / n diode package was produced in the same manner as in Example 1 except that the pressurizing pressure was changed to 10 MPa in the joining step using the silver particle adhesive composition layer of Example 1. Further, as in Example 1, the density of the sintered silver bonding material, the initial characteristics of the package, and the power cycle life were evaluated, and the results are shown in Table 1.

[Example 4]
A Si p / n diode package was produced in the same manner as in Example 1 except that the pressurizing pressure was changed to 5 MPa in the joining step using the silver particle adhesive composition layer of Example 1. Further, as in Example 1, the density of the sintered silver bonding material, the initial characteristics of the package, and the power cycle life were evaluated, and the results are shown in Table 1.

[Example 5]
A Si p / n diode package was produced in the same manner as in Example 1 except that the pressurizing pressure was changed to 3 MPa in the joining step using the silver particle adhesive composition layer of Example 1. Further, as in Example 1, the density of the sintered silver bonding material, the initial characteristics of the package, and the power cycle life were evaluated, and the results are shown in Table 1.

[Example 6]
A Si p / n diode package was produced in the same manner as in Example 1 except that the pressurizing pressure was changed to 1 MPa in the joining step using the silver particle adhesive composition layer of Example 1. Further, as in Example 1, the density of the sintered silver bonding material, the initial characteristics of the package, and the power cycle life were evaluated, and the results are shown in Table 1.

[Example 7]
Si p / n diode package in the same manner as in Example 1 except that, in the joining process using the silver particle adhesive composition layer of Example 1, the pressure was changed to 15 MPa and the formation of the primer resin was omitted. Was made. Further, as in Example 1, the density of the sintered silver bonding material, the initial characteristics of the package, and the power cycle life were evaluated, and the results are shown in Table 1.

[Comparative Example 1]
Except that the production of the silver particle adhesive composition of Example 1, the formation of the silver particle adhesive composition layer, and the joining process using the silver particle adhesive composition layer were changed to the solder joining process shown below. In the same manner as in Example 1, a Si p / n diode package was produced.

(Solder joining process)
A Cu lead frame on which a 4 μm thick Ni plating was formed was prepared. Carbon mask (length 15 mm x width 15 mm x thickness) having an opening (length 8.7 mm x width 6.2 mm) in the center on a part of the heat block (length 24 mm x width 19 mm x thickness 3 mm) of the Cu lead frame 1.5mm), and a high-temperature solder sheet (95% by mass Pb-3.5% by mass Sn-1.5% by mass Ag, 8.5 mm long × 6 mm wide × 130 μm thick) at the opening of the carbon mask. And a semiconductor element, a Si p / n diode chip (length 8.5 mm × width 6 mm × thickness 0.6 mm, anode outermost surface: Al, cathode outermost surface: Au) on a high-temperature solder sheet The side and the high temperature solder were placed in contact.

  The high temperature solder was melted in the formic acid reflow furnace by the following process. First, the sample was placed on a heater in the furnace, and the inside of the furnace was evacuated to 13 Pa. Next, nitrogen saturated with formic acid gas was introduced from the formic acid container into the furnace at 8 L / min while introducing nitrogen into the formic acid container and bubbling. After the furnace pressure reached 80000 Pa, the introduction of nitrogen saturated with formic acid gas was stopped, and the vacuum displacement was adjusted so that the furnace pressure was maintained at 80000 Pa. The heater was heated from room temperature to 350 ° C. at 15 ° C./min. Evacuation was started at 230 ° C. in the temperature raising process, and evacuated to 13 Pa or less. After reaching 350 ° C., the temperature was maintained at 350 ° C., and after 5 minutes from the holding, nitrogen was introduced into the furnace at 10 L / min. After the furnace pressure reached atmospheric pressure, the heater was cooled from 350 ° C. to 50 ° C. at 20 ° C./min. Then, the sample was taken out from the furnace and the soldering process was completed.

Further, as in Example 1, the density evaluation of the sintered silver bonding material and the initial characteristic evaluation of the package were performed, and the results are shown in Table 1. Table Further, in the power cycle test Si p / n diode package, except that the 1.1 seconds I _ON energizing time, similarly evaluate the life in packaging a power cycle test as in Example 1, the results It was shown in 1. In the package power cycle test, T _jmax and T _jmin at the 100th power cycle were measured while continuing the package power cycle test. As a result, the results were about 200 ° C. and about 40 ° C. as in Example 1. Met.

  Table 1 shows the initial characteristics and power cycle test results of the Si p / n diode package. “Sintered silver” in Table 1 is “sintered silver bonding material” in each example, and “high temperature solder” is “95 mass% Pb-3.5 mass% Sn-1.5 mass% in Comparative Example 1. “High-temperature solder of Ag”, “Primer” is “Primer resin” in each Example and Comparative Example, “Sealing material” is “Sealing resin” in each Example and Comparative Example 1, “Initial characteristics” is “Initial characteristics of package” in each example and comparative example 1, “PC life” of “reliability” is life in “power cycle test of package” of each example and comparative example 1, “Tg” is “ “Glass transition temperature”, “E” represents “elastic modulus”, and “CTE” represents “linear expansion coefficient”.

From the initial characteristics shown in Table 1, when the Si p / n diode package was operated at the same current, the thermal resistance and electrical resistance (forward resistance) of the sintered silver bonding material were lower than that of the high-temperature solder. As a result, heat easily escapes from the Si p / n diode chip, and Joule heat generated around the Si p / n diode chip is reduced. Therefore, the sintered silver bonding material was able to reduce T _jmax by about 30 ° C. than the high temperature solder. In general, it is said that the lifetime of a semiconductor element is doubled when the temperature is lowered by 10 ° C. Therefore, in a normal Si p / n diode package operating environment, the use of sintered silver bonding material is expected to extend the life several times that of high temperature solder.

From the power cycle life values shown in Table 1, even in power cycle tests where the initial T _jmax is _set to the same condition (200 ° C.), the sintered silver joint material has a life that is up to about twice that of high-temperature solder. Extended. It was also found that the power cycle life was improved by the primer treatment (treatment for forming the primer resin) and the improvement in the density of the sintered silver bonding material.

[Example 8]
(Preparation of silver particle adhesive composition)
A silver particle adhesive composition was prepared by the following steps. First, 12 parts by mass of DPMA (manufactured by Daicel Industries, Ltd., dipropylene glycol methyl ether acetate), 12 parts by mass of MTPH (manufactured by Nippon Terpene Chemical Co., Ltd., isobornylcyclohexanol), and 0.88 parts by mass of stearic acid The mixture was kneaded for 10 minutes with a paddle to obtain a liquid component. To this liquid component, 88 parts by mass of flaky silver particles (AgC-239, manufactured by Fukuda Metal Foil Powder Co., Ltd.) was added and kneaded for 15 minutes with a coarse machine to obtain a silver particle adhesive composition.

(Formation of silver particle adhesive composition layer)
A Cu lead frame on which 4 μm thick Ag plating was formed was prepared. A metal mask with a gap of 40 μm was placed on a Cu block (length 24 mm × width 19 mm × thickness 3 mm), and a sintered silver paste (silver particle adhesive composition) was screen-printed in a range of length 10 mm × width 6 mm. Next, the copper lead frame was heated on a hot plate at 160 ° C. for 180 seconds to form a silver particle adhesive composition layer.

(Joint process with silver particle adhesive composition layer)
The Si particle chip (8 mm long × 4 mm wide × 0.3 mm thick, front surface: Al film, back surface: Ag film), which is a semiconductor element, is in contact with the Ag film side and the silver particle adhesive composition layer. A chip was placed on the silver particle adhesive composition layer, and a sample for pressure bonding was prepared. Here, the Si dummy chip means a test TEG (test element group) chip using Si. Hereinafter, the “Si dummy chip” may be simply referred to as “chip”. The sample for pressure bonding was pressurized at 15 MPa for 10 minutes with a stainless steel stage and a stainless steel head heated to 300 ° C., and the chip was bonded to the heat block. This bonding material is called “sintered silver bonding material”. During pressurization, a carbon sheet (thickness 3 mm) was sandwiched between the anode surface of the Si p / n diode chip and the stainless steel head to protect the Si dummy chip.

(Formation of primer resin)
In the sample after bonding, a primer resin was formed on all exposed surfaces of the Si dummy chip and the portion where the heat block was sealed. HIMAL (HL-1210-H0001, glass transition temperature 260 ° C., diethylene glycol dimethyl ether solution of polyamideimide resin) manufactured by Hitachi Chemical Co., Ltd. was used as the primer resin coating solution, and was applied by brush. Then, it heated on the 100 degreeC hotplate for 5 minutes, and also heated on the 200 degreeC hotplate for 1 hour, and dried the solvent from the coating film, and formed 2 micrometer-thick primer resin.

(Package sealing process)
In the sample after the formation of the primer resin, the portion where the Si dummy chip and the Cu block primer resin were formed was sealed with a sealing resin. As the sealing resin, a solid sealing material manufactured by Hitachi Chemical Co., Ltd. (CEL-420HFC, glass transition temperature 211 ° C., inorganic filler-containing epoxy resin, elastic modulus 14.2 GPa, linear expansion coefficient 11.9 × 10 ⁻⁶ / ° C) was used. Sealing was performed by using a ton-laser mold apparatus at a mold temperature of 180 ° C., a molding pressure of 6.9 MPa, and a curing heating time of 90 seconds. Thereafter, the sealed sample is heated in an oven at 200 ° C. for 6 hours to complete the curing of the sealing resin, and the Si TEG in which the outer shape of the cured resin is 50 mm long × 30 mm wide × 9 mm thick A package was produced. The above steps were repeated to produce two Si TEG packages. FIG. 2 shows a schematic cross-sectional view of a Si TEG package 8 (hereinafter sometimes simply referred to as “package”) which is a manufactured semiconductor device.

  The glass transition temperature, elastic modulus, and linear expansion coefficient of the cured resin product were evaluated in the same manner as in Example 1. The results are shown in Table 2.

(Dense density evaluation of sintered silver bonding material)
After cutting the first package and polishing the cross section to a mirror surface, the periphery of the bonding material is processed by FIB (Focused Ion Beam, FB-2000A manufactured by Hitachi, Ltd.), and the SIM (Scanning Ion Microscope) of the apparatus ) Was used for cross-sectional observation. In the cross-sectional image of the obtained sintered silver bonding material, residual voids were painted black by image processing software, and the image was binarized. The area ratio of the white part of the binarized image of the sintered silver bonding material part was evaluated as the density of the sintered silver. The density of the obtained sintered silver bonding material is shown in Table 1.

(Evaluation of adhesion area ratio of sintered silver bonding material)
The second of Si TEG package was observed by SAM (Scanning Acoustic Microscope), it was evaluated the adhesion area ratio _{S 0} before the temperature cycle test in the following manner. First, a 15 MHz ultrasonic wave was irradiated from the Cu block side of the Si TEG package, the ultrasonic wave reflected by the bonding material was measured, and a SAM image was observed. Next, the SAM image of the bonding material was similarly observed after 400 temperature cycles. Than SAM image before the temperature cycle test was evaluated area S _A of the portion where the contrast becomes brighter. Dividing the S _A in the area _{S DB} of the bonding material was evaluated the adhesion area ratio _{S 400} of the bonding material (%). Next, the SAM image of the bonding material was similarly observed after 1000 temperature cycles. Than SAM image before the temperature cycle test was evaluated area S _A of the portion where the contrast becomes brighter. Dividing the S _A in the area _{S DB} of the bonding material was evaluated the adhesion area ratio _{S 1000} (%) of the bonding material. The obtained results are shown in Table 2.

(Package temperature cycle test)
A temperature cycle test of the second Si TEG package was performed. Within the test chamber, the package was subjected to a temperature cycle by hot and cold air. First, warm air was blown for 15 minutes so that the temperature in the test tank was maintained at 200 ° C. ± 5 ° C. for 5 minutes or more. Next, cold air was blown for 15 minutes so that the temperature in the test tank was maintained at −40 ° C. ± 5 ° C. for 5 minutes or more. This was regarded as one temperature cycle, and the temperature cycle test was conducted up to 1000 times. SAM observation was performed at the time of 400 temperature cycles and 1000 times, and the adhesion area ratio of the bonding material was evaluated.

[Example 9]
In the package sealing process, a solid sealing material made by Hitachi Chemical (CEL-420HFB (V6), glass transition temperature 210 ° C., inorganic filler-containing epoxy resin, elastic modulus 15.1 GPa, linear expansion) A Si TEG package was produced in the same manner as in Example 8 except that the coefficient was 11.8 × 10 ⁻⁶ / ° C.). The glass transition temperature, elastic modulus, and linear expansion coefficient of the cured sealing resin were evaluated in the same manner as in Example 1, and the results are shown in Table 2. Further, in the same manner as in Example 8, the adhesion area ratio evaluation of the bonding material of the package and the temperature cycle test of the package were performed, and the results are shown in Table 2.

[Example 10]
In the package sealing step, the sealing resin B (glass transition temperature 217 ° C., inorganic filler-containing epoxy resin, elastic modulus 17.9 GPa, coefficient of linear expansion 17.4 × A Si TEG package was produced in the same manner as in Example 8 except that 10 ⁻⁶ / ° C. was used. The glass transition temperature, elastic modulus, and linear expansion coefficient of the cured sealing resin were evaluated in the same manner as in Example 1, and the results are shown in Table 2. Further, in the same manner as in Example 8, the adhesion area ratio evaluation of the sintered silver bonding material of the package and the temperature cycle test of the package were performed, and the results are shown in Table 2.

(Preparation of sealing resin)
As an epoxy resin, 100 parts by mass of trisphenolmethane type epoxy resin (Mitsubishi Chemical Corporation (former Japan Epoxy Resin Co., Ltd.), 1032H60) and phenol resin A made by Nippon Steel Chemical Co., Ltd. (former Toto Kasei Co., Ltd.) 59 parts by mass of phenol resin (SN-375), as an antioxidant, 5 parts by mass of hindered phenolic antioxidant (manufactured by ADEKA, AO-60), triphenylphosphine and 1,4- 2 parts by mass of an addition reaction product of benzoquinone, 1023 parts by mass of spherical fused silica having an average particle diameter (D50) of 17.5 μm and a specific surface area of 3.8 m ² / g as an inorganic filler, and epoxysilane (γ- 11 parts by weight of glycidoxypropyltrimethoxysilane and carbon black as a colorant (Mitsubishi Chemical) A product of a commercial company, trade name "MA-100") 2.6 parts by mass, and 1 part by mass of carnauba wax (manufactured by Celerica NODA Co., Ltd.) as a release agent, kneading temperature 80 ° C, kneading time 15 minutes The sealing resin B was produced by roll kneading under the conditions described above.

[Example 11]
In the package sealing process, the solid resin (GE-5000, glass transition temperature 217 ° C., inorganic filler-containing epoxy resin, elastic modulus 17.1 GPa, linear expansion coefficient 12) manufactured by Hitachi Chemical Co., Ltd. .8 × 10 ⁻⁶ / ° C.) and a Si TEG package was produced in the same manner as in Example 8 except that the sealing resin was cured at 175 ° C. for 6 hours. The glass transition temperature, elastic modulus, and linear expansion coefficient of the cured sealing resin were evaluated in the same manner as in Example 1, and the results are shown in Table 2. Further, in the same manner as in Example 8, the adhesion area ratio evaluation of the bonding material of the package and the temperature cycle test of the package were performed, and the results are shown in Table 2.

[Example 12]
In the package sealing process, a solid sealing material manufactured by Hitachi Chemical Co., Ltd. (CEL-400ZHF16, glass transition temperature 204 ° C., inorganic filler-containing epoxy resin, elastic modulus 17.1 GPa, linear expansion coefficient 10) .2 × 10 ⁻⁶ / ° C.) and a Si TEG package was produced in the same manner as in Example 8 except that the sealing resin was cured at 175 ° C. for 6 hours. The glass transition temperature, elastic modulus, and linear expansion coefficient of the cured sealing resin were evaluated in the same manner as in Example 1, and the results are shown in Table 2. Further, in the same manner as in Example 8, the adhesion area ratio evaluation of the bonding material of the package and the temperature cycle test of the package were performed, and the results are shown in Table 2.

[Example 13]
A Si TEG package was produced in the same manner as in Example 8 except that a metal mask having a gap of 20 μm was used in the step of forming the silver particle adhesive composition layer. The glass transition temperature, elastic modulus, and linear expansion coefficient of the cured sealing resin were evaluated in the same manner as in Example 1, and the results are shown in Table 2. Further, in the same manner as in Example 8, the adhesion area ratio evaluation of the bonding material of the package and the temperature cycle test of the package were performed, and the results are shown in Table 2.

[Example 14]
A Si TEG package was produced in the same manner as in Example 8 except that a metal mask having a gap of 70 μm was used in the step of forming the silver particle adhesive composition layer. The glass transition temperature, elastic modulus, and linear expansion coefficient of the cured sealing resin were evaluated in the same manner as in Example 1, and the results are shown in Table 2. Further, in the same manner as in Example 8, the adhesion area ratio evaluation of the bonding material of the package and the temperature cycle test of the package were performed, and the results are shown in Table 2.

[Example 15]
Except that a metal mask having a gap of 70 μm was used in the formation process of the silver particle adhesive composition layer and that the pressure was applied at 5 MPa in the bonding process of the silver particle adhesive composition layer, the same as in Example 8. Thus, a Si TEG package was produced. The glass transition temperature, elastic modulus, and linear expansion coefficient of the cured sealing resin were evaluated in the same manner as in Example 1, and the results are shown in Table 2. Further, in the same manner as in Example 8, the adhesion area ratio evaluation of the bonding material of the package and the temperature cycle test of the package were performed, and the results are shown in Table 2.

[Example 16]
Example except that HIMAL (HL-1210, glass transition temperature 220 ° C., diethylene glycol dimethyl ether solution of polyamide-imide resin) manufactured by Hitachi Chemical Co., Ltd. was used as the primer resin coating solution in the primer resin forming step. In the same manner as in Example 8, a Si TEG package was produced. The glass transition temperature, elastic modulus, and linear expansion coefficient of the cured sealing resin were evaluated in the same manner as in Example 1, and the results are shown in Table 2. Further, in the same manner as in Example 8, the adhesion area ratio evaluation of the bonding material of the package and the temperature cycle test of the package were performed, and the results are shown in Table 2.

[Example 17]
A Si TEG package was produced in the same manner as in Example 8 except that the step of forming the primer resin was omitted. The glass transition temperature, elastic modulus, and linear expansion coefficient of the cured sealing resin were evaluated in the same manner as in Example 1, and the results are shown in Table 2. Further, in the same manner as in Example 8, the adhesion area ratio evaluation of the bonding material of the package and the temperature cycle test of the package were performed, and the results are shown in Table 2.

[Example 18]
In the process of forming the primer resin, and in the package sealing process, the sealing resin includes a solid sealing material manufactured by Hitachi Chemical Co., Ltd. (CEL-420HFB (V6), glass transition temperature 210 ° C., containing inorganic filler) A Si TEG package was produced in the same manner as in Example 8 except that an epoxy resin, an elastic modulus of 15.1 GPa, and a linear expansion coefficient of 11.8 × 10 ⁻⁶ / ° C. were used. The glass transition temperature, elastic modulus, and linear expansion coefficient of the cured sealing resin were evaluated in the same manner as in Example 1, and the results are shown in Table 2. Further, in the same manner as in Example 8, the adhesion area ratio evaluation of the bonding material of the package and the temperature cycle test of the package were performed, and the results are shown in Table 2.

[Example 19]
The sealing resin B (glass transition temperature 217 ° C., inorganic filler-containing epoxy resin, elastic modulus 17.9 GPa, linear expansion coefficient 17.4 × in the step of forming the primer resin and in the package sealing step) A Si TEG package was produced in the same manner as in Example 8 except that 10 ⁻⁶ / ° C. was used. The glass transition temperature, elastic modulus, and linear expansion coefficient of the cured sealing resin were evaluated in the same manner as in Example 1, and the results are shown in Table 2. Further, in the same manner as in Example 8, the adhesion area ratio evaluation of the bonding material of the package and the temperature cycle test of the package were performed, and the results are shown in Table 2.

[Example 20]
In the process of forming the primer resin and in the package sealing process, a solid sealing material manufactured by Hitachi Chemical Co., Ltd. (GE-5000, glass transition temperature 217 ° C., inorganic filler-containing epoxy resin) , Elastic modulus 17.1 GPa, linear expansion coefficient 12.8 × 10 ⁻⁶ / ° C.) and sealing resin was cured at 175 ° C. for 6 hours in the same manner as in Example 8. A Si TEG package was produced. The glass transition temperature, elastic modulus, and linear expansion coefficient of the cured sealing resin were evaluated in the same manner as in Example 1, and the results are shown in Table 2. Further, in the same manner as in Example 8, the adhesion area ratio evaluation of the bonding material of the package and the temperature cycle test of the package were performed, and the results are shown in Table 2.

[Example 21]
In the process of forming the primer resin and in the package sealing process, a solid sealing material (CEL-400ZHF16, glass transition temperature 204 ° C., inorganic filler-containing epoxy resin manufactured by Hitachi Chemical Co., Ltd.) is used as the sealing resin. , Elastic modulus 17.1 GPa, linear expansion coefficient 10.2 × 10 ⁻⁶ / ° C.), and sealing resin was cured under conditions of 175 ° C. for 6 hours. A Si TEG package was produced. The glass transition temperature, elastic modulus, and linear expansion coefficient of the cured sealing resin were evaluated in the same manner as in Example 1, and the results are shown in Table 2. Further, in the same manner as in Example 8, the adhesion area ratio evaluation of the bonding material of the package and the temperature cycle test of the package were performed, and the results are shown in Table 2.

[Comparative Example 2]
In the process of forming the primer resin, and in the package sealing process, the sealing resin is a solid sealing material manufactured by Hitachi Chemical Co., Ltd. (CEL-20CF, glass transition temperature 190 ° C., inorganic filler-containing epoxy resin) , Elastic modulus 13.5 GPa, linear expansion coefficient 12.0 × 10 ⁻⁶ / ° C.), and the sealing resin was cured at 175 ° C. for 6 hours in the same manner as in Example 8. A Si TEG package was produced. The glass transition temperature, elastic modulus, and linear expansion coefficient of the cured sealing resin were evaluated in the same manner as in Example 1, and the results are shown in Table 2. Further, in the same manner as in Example 8, the adhesion area ratio evaluation of the bonding material of the package and the temperature cycle test of the package were performed, and the results are shown in Table 2.

[Comparative Example 3]
In the process of forming the primer resin, and in the package sealing process, the sealing resin includes a solid sealing material made by Hitachi Chemical Co., Ltd. (CEL-420HFB (V7), glass transition temperature 221 ° C., inorganic filler contained) A Si TEG package was produced in the same manner as in Example 8 except that an epoxy resin, an elastic modulus of 21.8 GPa, and a linear expansion coefficient of 8.0 × 10 −6 / ° C. were used. The glass transition temperature, elastic modulus, and linear expansion coefficient of the cured sealing resin were evaluated in the same manner as in Example 1, and the results are shown in Table 2. Further, in the same manner as in Example 8, the adhesion area ratio evaluation of the bonding material of the package and the temperature cycle test of the package were performed, and the results are shown in Table 2.

[Comparative Example 4]
A Si TEG package was produced in the same manner as in Example 8 except that the primer resin forming step and the package sealing step were omitted. The glass transition temperature, elastic modulus, and linear expansion coefficient of the cured sealing resin were evaluated in the same manner as in Example 1, and the results are shown in Table 2. Further, in the same manner as in Example 8, the adhesion area ratio evaluation of the bonding material of the package and the temperature cycle test of the package were performed, and the results are shown in Table 2.

  Table 2 shows the reliability test results of the Si TEG package. In Table 2, “sintered silver” is “sintered silver bonding material” in each example and each comparative example, “primer” is “primer resin” in each example, and “sealing material” is in each example. And “sealing resin” in each comparative example, “bonding area ratio” of “reliability” is “adhesion area ratio of sintered silver bonding material” in the temperature cycle test of each example and each comparative example, “Tg” “Glass transition temperature”, “E” represents “elastic modulus”, and “CTE” represents “linear expansion coefficient”.

According to Table 2, in order to improve the temperature cycle resistance of the bonding material in the package (the adhesion area ratio of the sintered silver bonding material at each temperature cycle in the temperature cycle test), it is sealed with a cured resin product. The glass transition temperature of the encapsulated resin cured product is 200 ° C. or more, the elastic modulus of the encapsulated resin cured product is 20 GPa or less, and the linear expansion coefficient is 10 × 10 ⁻⁶ / ° C. or more. It was effective.

  Furthermore, forming the primer resin, increasing the glass transition temperature of the primer resin, and increasing the thickness of the silver particle sintered body were effective for improving the temperature cycle resistance of the bonding material in the package.

  The semiconductor device of the present invention is industrially useful because it can provide a semiconductor device with excellent reliability in a high temperature environment.

1. 1. Semiconductor device or Si p / n diode package 2. Semiconductor element, Si p / n diode chip, or Si dummy chip Lead frame or Cu lead frame or Cu block 3a. + Side outer frame 3b. -Side outer frame 3c. Heat block 4. 4. Bonding material 5. Sealed resin cured product Primer resin7. 7. Al wire Semiconductor device or Si TEG package

Claims (9)

Semiconductor element, lead frame bonded to the semiconductor element, bonding material for bonding the semiconductor element and the lead frame, and sealing resin curing for sealing the semiconductor element, the bonding material, and a part of the lead frame The bonding material includes a silver particle sintered body, and the glass transition temperature of the encapsulated resin cured product is 195 ° C. or higher, and the elastic modulus at 50 ° C. is 10 GPa or more and 20 GPa or less. A semiconductor device having a linear expansion coefficient in the glass region of 9 × 10 ⁻⁶ / ° C. or more and 24 × 10 ⁻⁶ / ° C. or less . The semiconductor device according to claim 1, wherein a density of the bonding material including the silver particle sintered body is 50 % or more and 100% or less . 3. The semiconductor device according to claim 1, wherein a thickness of the bonding material including the silver particle sintered body is 5 μm or more and 50 μm or less .   The semiconductor device as described in any one of Claims 1-3 whose sealing resin hardened | cured material is a hardened | cured material of the thermosetting resin containing an epoxy resin and an inorganic filler. A semiconductor device further comprising a primer resin, the semiconductor device according to any one of claims 1 to 4, a primer resin on the surface of the opposite side is formed to the bonding surface of the lead frame of the semiconductor device. The glass transition temperature of the primer resin is 200 ° C. or higher, the semiconductor device according to any one of claims 1-5. The thickness of the primer resin is 0.1 [mu] m or more 20μm or less, the semiconductor device according to any one of claims 1-6. Primer resin is a polyamide resin or a polyamide-imide resin, the semiconductor device according to any one of claims 1-7. Primer resin is a thermoplastic resin, the semiconductor device according to any one of claims 1-8.

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