JP6312792B2 - 無線周波数集積回路（ｒｆｉｃ）帯電デバイスモデル（ｃｄｍ）保護 - Google Patents

無線周波数集積回路（ｒｆｉｃ）帯電デバイスモデル（ｃｄｍ）保護 Download PDF

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Publication number
JP6312792B2
JP6312792B2 JP2016501078A JP2016501078A JP6312792B2 JP 6312792 B2 JP6312792 B2 JP 6312792B2 JP 2016501078 A JP2016501078 A JP 2016501078A JP 2016501078 A JP2016501078 A JP 2016501078A JP 6312792 B2 JP6312792 B2 JP 6312792B2
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channel transistor
coupled
diode
voltage
circuit
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Japanese (ja)
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JP2016513886A (ja
JP2016513886A5 (https=
Inventor
グデム、プラサド・スリニバサ・シバ
クハトリ、ヒマンシュ
ゴッドボール、デバブラータ・ブイ
ウォーリー、ユージーン・ロベルト
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Qualcomm Inc
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Qualcomm Inc
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
    • H02H9/046—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere responsive to excess voltage appearing at terminals of integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52—Circuit arrangements for protecting such amplifiers
    • H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/489—A coil being added in the source circuit of a common source stage, e.g. as degeneration means

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
JP2016501078A 2013-03-15 2014-03-10 無線周波数集積回路（ｒｆｉｃ）帯電デバイスモデル（ｃｄｍ）保護 Active JP6312792B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/841,239 US9929698B2 (en) 2013-03-15 2013-03-15 Radio frequency integrated circuit (RFIC) charged-device model (CDM) protection
US13/841,239 2013-03-15
PCT/US2014/022816 WO2014150280A1 (en) 2013-03-15 2014-03-10 Radio frequency integrated circuit (rfic) charged-device model (cdm) protection

Publications (3)

Publication Number Publication Date
JP2016513886A JP2016513886A (ja) 2016-05-16
JP2016513886A5 JP2016513886A5 (https=) 2017-03-23
JP6312792B2 true JP6312792B2 (ja) 2018-04-18

Family

ID=50390294

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016501078A Active JP6312792B2 (ja) 2013-03-15 2014-03-10 無線周波数集積回路（ｒｆｉｃ）帯電デバイスモデル（ｃｄｍ）保護

Country Status (6)

Country Link
US (2) US9929698B2 (https=)
EP (1) EP2973704B1 (https=)
JP (1) JP6312792B2 (https=)
KR (1) KR20150132335A (https=)
CN (1) CN105190886B (https=)
WO (1) WO2014150280A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12170440B2 (en) 2021-12-17 2024-12-17 Kioxia Corporation Surge protection in semiconductor integrated circuit and semiconductor memory device

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US9780738B2 (en) * 2011-08-22 2017-10-03 Renesas Electronics Corporation Semiconductor device
EP2741330A1 (en) * 2012-12-06 2014-06-11 Nxp B.V. ESD protection
US9929698B2 (en) * 2013-03-15 2018-03-27 Qualcomm Incorporated Radio frequency integrated circuit (RFIC) charged-device model (CDM) protection
US9608437B2 (en) * 2013-09-12 2017-03-28 Qualcomm Incorporated Electro-static discharge protection for integrated circuits
US9899961B2 (en) * 2015-02-15 2018-02-20 Skyworks Solutions, Inc. Enhanced amplifier efficiency through cascode current steering
US9559640B2 (en) * 2015-02-26 2017-01-31 Qualcomm Incorporated Electrostatic discharge protection for CMOS amplifier
US9882531B1 (en) 2016-09-16 2018-01-30 Peregrine Semiconductor Corporation Body tie optimization for stacked transistor amplifier
JP6761374B2 (ja) * 2017-05-25 2020-09-23 株式会社東芝 半導体装置
KR102066008B1 (ko) * 2018-07-16 2020-01-14 주식회사 다이얼로그 세미컨덕터 코리아 최대 정격 성능이 개선된 lna
CN109193971A (zh) * 2018-10-25 2019-01-11 叶宝华 储能脉冲装置
EP4072028B1 (en) * 2019-12-05 2024-07-24 Wenjing Wu Micro-energy collection apparatus and method
US11462904B2 (en) * 2021-01-20 2022-10-04 Hangzhou Geo-Chip Technology Co., Ltd. Apparatus for protection against electrostatic discharge and method of manufacturing the same
US12439702B2 (en) * 2022-05-09 2025-10-07 Nxp B.V. Electrostatic discharge protection for wireless device

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JPS5825264A (ja) * 1981-08-07 1983-02-15 Hitachi Ltd 絶縁ゲート型半導体装置
US5119162A (en) * 1989-02-10 1992-06-02 Texas Instruments Incorporated Integrated power DMOS circuit with protection diode
US5276350A (en) 1991-02-07 1994-01-04 National Semiconductor Corporation Low reverse junction breakdown voltage zener diode for electrostatic discharge protection of integrated circuits
US5917220A (en) * 1996-12-31 1999-06-29 Stmicroelectronics, Inc. Integrated circuit with improved overvoltage protection
US6268242B1 (en) * 1997-12-31 2001-07-31 Richard K. Williams Method of forming vertical mosfet device having voltage clamped gate and self-aligned contact
US6413822B2 (en) * 1999-04-22 2002-07-02 Advanced Analogic Technologies, Inc. Super-self-aligned fabrication process of trench-gate DMOS with overlying device layer
US6404269B1 (en) * 1999-09-17 2002-06-11 International Business Machines Corporation Low power SOI ESD buffer driver networks having dynamic threshold MOSFETS
JP3633880B2 (ja) 2000-05-15 2005-03-30 Ｎｅｃエレクトロニクス株式会社 Ｅｓｄ保護装置及びその製造方法
US20010043449A1 (en) 2000-05-15 2001-11-22 Nec Corporation ESD protection apparatus and method for fabricating the same
US6507471B2 (en) * 2000-12-07 2003-01-14 Koninklijke Philips Electronics N.V. ESD protection devices
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JP2007531284A (ja) 2004-03-23 2007-11-01 サーノフ コーポレーション ソース／バルク・ポンピングを使用してゲート酸化膜を保護するための方法および装置
US7443225B2 (en) * 2006-06-30 2008-10-28 Alpha & Omega Semiconductor, Ltd. Thermally stable semiconductor power device
US8053808B2 (en) * 2007-05-21 2011-11-08 Alpha & Omega Semiconductor, Ltd. Layouts for multiple-stage ESD protection circuits for integrating with semiconductor power device
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JP2009253699A (ja) * 2008-04-07 2009-10-29 Toyota Motor Corp 半導体素子の駆動回路
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US9929698B2 (en) * 2013-03-15 2018-03-27 Qualcomm Incorporated Radio frequency integrated circuit (RFIC) charged-device model (CDM) protection
US20140268446A1 (en) * 2013-03-15 2014-09-18 Qualcomm Incorporated Radio frequency integrated circuit (rfic) charged-device model (cdm) protection

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12170440B2 (en) 2021-12-17 2024-12-17 Kioxia Corporation Surge protection in semiconductor integrated circuit and semiconductor memory device

Also Published As

Publication number Publication date
US20180175803A1 (en) 2018-06-21
US20140268447A1 (en) 2014-09-18
JP2016513886A (ja) 2016-05-16
US9929698B2 (en) 2018-03-27
WO2014150280A1 (en) 2014-09-25
CN105190886A (zh) 2015-12-23
KR20150132335A (ko) 2015-11-25
EP2973704B1 (en) 2019-05-08
CN105190886B (zh) 2019-09-10
EP2973704A1 (en) 2016-01-20

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