JP6299369B2 - Manufacturing method of plate-like body - Google Patents

Manufacturing method of plate-like body Download PDF

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JP6299369B2
JP6299369B2 JP2014086477A JP2014086477A JP6299369B2 JP 6299369 B2 JP6299369 B2 JP 6299369B2 JP 2014086477 A JP2014086477 A JP 2014086477A JP 2014086477 A JP2014086477 A JP 2014086477A JP 6299369 B2 JP6299369 B2 JP 6299369B2
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plate
chamfered portion
grindstone
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glass substrate
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JP2015205364A (en
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高志 坂本
高志 坂本
丈彰 小野
丈彰 小野
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AGC Inc
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本発明は、板状体の製造方法、およびゴム砥石に関する。   The present invention relates to a method for producing a plate-like body and a rubber grindstone.

磁気記録媒体用ガラス基板などの板状体の製造方法は、板状体の端面に面取部および側面部を形成する面取工程と、面取部および側面部を回転ブラシで研磨する端面研磨工程とを有する(例えば特許文献1参照)。板状体の側面部は、板状体の主面に対して垂直とされてよい。   A method for producing a plate-like body such as a glass substrate for a magnetic recording medium includes a chamfering process for forming a chamfered portion and a side surface portion on an end surface of the plate-like body, and an end surface polishing for polishing the chamfered portion and the side surface portion with a rotating brush. (For example, refer patent document 1). The side surface portion of the plate-like body may be perpendicular to the main surface of the plate-like body.

特開2010−238302号公報JP 2010-238302 A

端面研磨工程では、研磨液を供給しながら面取部および側面部を回転ブラシで研磨することにより、面取部や側面部の加工変質層を除去する。加工変質層は、面取工程において生じるキズやクラックを含む層である。   In the end surface polishing step, the chamfered portion and the side surface portion are polished with a rotating brush while supplying the polishing liquid, thereby removing the work-affected layer on the chamfered portion and the side surface portion. The work-affected layer is a layer containing scratches and cracks generated in the chamfering process.

回転ブラシは、板状体の主面に対して垂直な回転軸、および回転軸の外周に取り付けられるブラシ毛で構成される。回転ブラシは、回転軸を中心に回転しながら、ブラシ毛で板状体の端面を研磨する。回転ブラシによる研磨部位には研磨液が供給される。   The rotating brush is composed of a rotating shaft perpendicular to the main surface of the plate-like body and brush hairs attached to the outer periphery of the rotating shaft. The rotating brush polishes the end surface of the plate-like body with brush bristles while rotating around the rotation axis. A polishing liquid is supplied to the polishing portion by the rotating brush.

板状体の側面部に比べて、板状体の面取部は、回転ブラシの回転軸から遠く、ブラシ毛が届きにくい部位であり、また、研磨材も届きにくい部位であるため、ブラシ毛で研磨されにくい。板状体の面取部のうち、板状体の主面との境界付近は、ブラシ毛や研磨材が特に届きにくい部位であり、研磨されにくい。この問題は、複数の板状体を積層してまとめてブラシ研磨を施す場合に顕著である。   Compared to the side surface of the plate-like body, the chamfered portion of the plate-like body is far from the rotation axis of the rotary brush and is a part where the brush hair is difficult to reach. It is hard to be polished. Of the chamfered portion of the plate-like body, the vicinity of the boundary with the main surface of the plate-like body is a portion where the brush hair and the abrasive are particularly difficult to reach and are not easily polished. This problem is remarkable when a plurality of plate-like bodies are laminated and subjected to brush polishing.

面取部の加工変質層を端面研磨工程で除去しようとすると、側面部の削り代が大きく、板状体の形状が崩れる。例えば、中央部に円孔を有する円盤状の磁気記録媒体用ガラス基板の場合、真円度や同心度が悪化する。   If it is attempted to remove the work-affected layer in the chamfered portion in the end surface polishing step, the machining allowance of the side surface portion is large, and the shape of the plate-like body is destroyed. For example, in the case of a disk-shaped glass substrate for a magnetic recording medium having a circular hole in the center, roundness and concentricity deteriorate.

本発明は、上記課題に鑑みてなされたものであって、面取工程において生じる加工変質層を除去でき、且つ、板状体の形状崩れを抑制できる、板状体の製造方法の提供を主な目的とする。   The present invention has been made in view of the above problems, and mainly provides a method for producing a plate-like body, which can remove a work-affected layer generated in a chamfering step and can suppress the deformation of the plate-like body. With a purpose.

上記課題を解決するために、本発明の一態様によれば、
第1主面と第2主面と端面とを備える板状体の前記端面に面取部および側面部を形成する面取工程と、前記面取部および前記側面部を回転ブラシで研磨する端面研磨工程とを有する、板状体の製造方法であって、
前記面取工程の後、前記端面研磨工程の前に、前記面取部をゴム砥石で加工する面取部加工工程を有し、
前記面取部は、前記第1主面側の第1面取部と前記第2主面側の第2面取部とを有し、
前記ゴム砥石は、複数の砥粒および該複数の砥粒を結合するゴムを有し、且つ、前記板状体と接触する第1加工面および第2加工面を有し、
前記面取部加工工程では、前記第1加工面が前記第1面取部に接すると共に前記第2加工面が前記第2面取部と接するように前記第1加工面と前記第2加工面との間に前記板状体を挿入し、前記第1加工面と前記第2加工面と前記側面部とで取り囲まれる空間が形成されるように前記第1加工面と前記第2加工面との間に形成される隙間を押し広げ、前記第1加工面で前記第1面取部を加工すると共に前記第2加工面で前記第2面取部を加工する、板状体の製造方法が提供される。

In order to solve the above problems, according to one aspect of the present invention,
A chamfering step of forming a chamfered portion and a side portion on the end face of the plate-like body and a first major surface and a second major surface and the end face, the end face is polished by a rotating brush the chamfered portion and the side portions A method for producing a plate-like body, comprising a polishing step,
After the chamfering step, before the end face polishing step, it has a chamfered portion processing step of processing the chamfered portion with a rubber grindstone,
The chamfered portion has a first chamfered portion on the first main surface side and a second chamfered portion on the second main surface side,
The rubber grindstone has a plurality of abrasive grains and a rubber that binds the plurality of abrasive grains, and has a first processing surface and a second processing surface that come into contact with the plate-like body,
In the chamfered portion processing step, the first processed surface and the second processed surface so that the first processed surface is in contact with the first chamfered portion and the second processed surface is in contact with the second chamfered portion. the plate-like body is inserted, said second working surface and said first work surface and the second processing surface and the side surface portion and the first processing surface before SL such that a space is formed which is surrounded by between And manufacturing the plate-like body by expanding the gap formed between the first processed surface and processing the first chamfered portion on the first processed surface and processing the second chamfered portion on the second processed surface. Is provided.

本発明の一態様によれば、面取工程において生じる加工変質層を除去でき、且つ、板状体の形状崩れを抑制できる、板状体の製造方法が提供される。   According to one aspect of the present invention, there is provided a method for producing a plate-like body, which can remove a work-affected layer generated in a chamfering step and can suppress the deformation of the plate-like body.

本発明の一実施形態による磁気記録媒体用ガラス基板の製造方法を示すフローチャートである。It is a flowchart which shows the manufacturing method of the glass substrate for magnetic recording media by one Embodiment of this invention. 本発明の一実施形態による面取砥石と板状体との接触前の状態を示す図である。It is a figure which shows the state before the contact with the chamfering grindstone and plate-shaped object by one Embodiment of this invention. 本発明の一実施形態による面取砥石と板状体との接触時の状態を示す図である。It is a figure which shows the state at the time of contact with the chamfering grindstone and plate-shaped object by one Embodiment of this invention. 本発明の一実施形態による面取砥石と板状体との接触後の状態を示す図である。It is a figure which shows the state after contact with the chamfering grindstone by one Embodiment of this invention, and a plate-shaped object. 本発明の一実施形態によるゴム砥石と板状体との接触前の状態を示す図である。It is a figure which shows the state before the contact with the rubber grindstone by one Embodiment of this invention, and a plate-shaped object. 本発明の一実施形態によるゴム砥石と板状体との接触時の状態を示す図である。It is a figure which shows the state at the time of the contact with the rubber grindstone by one Embodiment of this invention, and a plate-shaped object. 本発明の一実施形態による回転ブラシと板状体との接触時の状態を示す図である。It is a figure which shows the state at the time of contact with the rotating brush and plate-shaped object by one Embodiment of this invention. 本発明の一実施形態による面取砥石およびゴム砥石を含む砥石ユニットを示す図である。It is a figure which shows the grindstone unit containing the chamfering grindstone and rubber grindstone by one Embodiment of this invention.

以下、本発明を実施するための形態について図面を参照して説明する。各図面において、同一の又は対応する構成には、同一の又は対応する符号を付して説明を省略する。本明細書において、数値範囲を表す「〜」はその前後の数値を含む範囲を意味する。   Hereinafter, embodiments for carrying out the present invention will be described with reference to the drawings. In the drawings, the same or corresponding components are denoted by the same or corresponding reference numerals, and description thereof is omitted. In this specification, “to” representing a numerical range means a range including numerical values before and after the numerical range.

以下、板状体としての磁気記録媒体用ガラス基板の製造方法について説明するが、板状体の種類は多種多様であってよく、磁気記録媒体用以外の用途(例えばフラットパネルディスプレイ用、建築用、車両用など)のガラス板、セラミックス板、シリコンウエハなどでもよい。また、板状体は積層板であってもよく、例えばガラス板同士の間に金属膜、樹脂膜などを含んでもよい。   Hereinafter, although the manufacturing method of the glass substrate for magnetic recording media as a plate-shaped object is demonstrated, the kind of plate-shaped object may be various, and uses other than the object for magnetic recording media (For example, for flat panel displays and for buildings) Glass plate, ceramic plate, silicon wafer or the like. The plate-like body may be a laminated plate, and may include, for example, a metal film, a resin film, or the like between glass plates.

図1は、本発明の一実施形態による磁気記録媒体用ガラス基板の製造方法を示すフローチャートである。磁気記録媒体用ガラス基板は、円盤状であって、中央部に円孔を有する。磁気記録媒体用ガラス基板上に磁性層などを形成することにより、磁気記録媒体が得られる。   FIG. 1 is a flowchart showing a method for manufacturing a glass substrate for a magnetic recording medium according to an embodiment of the present invention. The glass substrate for magnetic recording media has a disc shape and has a circular hole in the center. A magnetic recording medium can be obtained by forming a magnetic layer or the like on a glass substrate for a magnetic recording medium.

図1に示すように、磁気記録媒体用ガラス基板の製造方法は、素板加工工程(ステップS11)、面取工程(ステップS12)、面取部加工工程(ステップS13)、端面研磨工程(ステップS14)、および主面研磨工程(ステップS15)などを有する。これらの工程の間や、これらの工程の後に、エッチング工程、洗浄工程、乾燥工程などが行われてもよい。   As shown in FIG. 1, the manufacturing method of the glass substrate for magnetic recording media includes a base plate processing step (step S11), a chamfering step (step S12), a chamfered portion processing step (step S13), and an end surface polishing step (step). S14), and a main surface polishing step (step S15). An etching process, a cleaning process, a drying process, etc. may be performed between these processes or after these processes.

素板加工工程(ステップS11)は、ガラス素板を加工することにより、中央部に円孔を有する円盤状のガラス基板を得る。ガラス素板は、例えばフロート法、フュージョン法、プレス成形法、ダウンドロー法、リドロー法などで成形される。   In the base plate processing step (step S11), a disk-shaped glass substrate having a circular hole in the center is obtained by processing the glass base plate. The glass base plate is formed by, for example, a float method, a fusion method, a press forming method, a down draw method, a redraw method, or the like.

面取工程(ステップS12)は、面取砥石でガラス基板の端面(内周端面および外周端面)を研削することにより、ガラス基板の端面に面取部および側面部を形成する。面取部はガラス基板の主面に対して斜めとされてよく、側面部はガラス基板の主面に対して垂直とされてよい。尚、面取部は平面でなくてもよく、丸みを帯びた曲面でもよい。   The chamfering step (step S12) forms a chamfered portion and a side surface portion on the end surface of the glass substrate by grinding the end surface (the inner peripheral end surface and the outer peripheral end surface) of the glass substrate with a chamfering grindstone. The chamfered portion may be inclined with respect to the main surface of the glass substrate, and the side surface portion may be perpendicular to the main surface of the glass substrate. Note that the chamfered portion may not be a flat surface, and may be a rounded curved surface.

面取部加工工程(ステップS13)は、ゴム砥石で面取部を加工することにより、面取部における加工変質層の厚みを低減する。加工変質層は、面取工程において生じるキズやクラックを含む層である。加工変質層は、面取部および側面部に形成される。   The chamfered portion machining step (step S13) reduces the thickness of the work-affected layer in the chamfered portion by processing the chamfered portion with a rubber grindstone. The work-affected layer is a layer containing scratches and cracks generated in the chamfering process. The work-affected layer is formed on the chamfered portion and the side surface portion.

端面研磨工程(ステップS14)は、研磨液を供給しながら回転ブラシで面取部および側面部を研磨することにより、面取部や側面部における加工変質層を除去する。回転ブラシによる研磨部位には研磨液が供給される。   The end surface polishing step (step S14) removes the work-affected layer in the chamfered portion and the side surface portion by polishing the chamfered portion and the side surface portion with a rotating brush while supplying the polishing liquid. A polishing liquid is supplied to the polishing portion by the rotating brush.

尚、複数の端面研磨工程が順次行われてもよく、回転ブラシだけで加工変質層を除去しなくてもよい。回転ブラシによるブラシ研磨の他に、スポンジ研磨、粘性流体研磨、磁性流体研磨などが行われてもよい。複数の端面研磨工程の間には、洗浄工程や乾燥工程が行われてよい。   Note that a plurality of end surface polishing steps may be sequentially performed, and the work-affected layer may not be removed with a rotating brush alone. In addition to brush polishing with a rotating brush, sponge polishing, viscous fluid polishing, magnetic fluid polishing, and the like may be performed. A cleaning process and a drying process may be performed between the plurality of end face polishing processes.

主面研磨工程(ステップS15)は、ガラス基板の主面(第1主面および第2主面)を研磨する。主面研磨工程では、ガラス基板の第1主面および第2主面を同時に研磨する両面研磨機が用いられてよい。両面研磨機は、複数のガラス基板を同時に研磨してよい。   In the main surface polishing step (step S15), the main surfaces (first main surface and second main surface) of the glass substrate are polished. In the main surface polishing step, a double-side polishing machine that simultaneously polishes the first main surface and the second main surface of the glass substrate may be used. The double-side polishing machine may polish a plurality of glass substrates simultaneously.

尚、複数の主面研磨工程が順次行われてもよい。複数の主面研磨工程は、研磨パットの種類や研磨液に含まれる砥粒の粒度を変えて行われる。複数の主面研磨工程の間には、洗浄工程や乾燥工程が行われてよい。   A plurality of main surface polishing steps may be performed sequentially. The plurality of main surface polishing steps are performed by changing the type of polishing pad and the particle size of the abrasive grains contained in the polishing liquid. A cleaning process and a drying process may be performed between the plurality of main surface polishing processes.

尚、図1に示す各工程の順序は、特に限定されない。例えば、主面研磨工程(ステップS15)の後に、端面研磨工程(ステップS14)が行われてもよい。また、図1に示す工程以外の工程が行われてもよい。例えば、主面研磨工程の前に、ガラス基板の主面のラップ(例えば遊離砥粒ラップ、固定砥粒ラップなど)が行われてよい。また、端面研磨工程や主面研磨工程の後、主平面研磨工程の間に、化学強化が行われてもよい。化学強化は、ガラス板の表面に含まれる小さなイオン半径のイオン(例えばLiイオンやNaイオン)を大きなイオン半径のイオン(例えばKイオン)に置換し、表面から所定の深さの強化層を形成する。強化層には圧縮応力が残留するため、傷が付きにくい。   In addition, the order of each process shown in FIG. 1 is not specifically limited. For example, the end surface polishing step (step S14) may be performed after the main surface polishing step (step S15). Moreover, processes other than the process shown in FIG. 1 may be performed. For example, the main surface of the glass substrate may be lapped (for example, free abrasive wrap, fixed abrasive wrap) before the main surface polishing step. Further, chemical strengthening may be performed between the main surface polishing step after the end surface polishing step and the main surface polishing step. Chemical strengthening replaces ions with a small ion radius (for example, Li ions and Na ions) contained on the surface of a glass plate with ions with a large ion radius (for example, K ions) to form a strengthened layer with a predetermined depth from the surface. To do. Since the compressive stress remains in the reinforcing layer, it is difficult to be damaged.

次に、図2〜図4を参照して面取工程について説明する。図2は、本発明の一実施形態による面取砥石と板状体との接触前の状態を示す図である。図3は、本発明の一実施形態による面取砥石と板状体との接触時の状態を示す図である。図4は、本発明の一実施形態による面取砥石と板状体との接触後の状態を示す図である。   Next, the chamfering process will be described with reference to FIGS. FIG. 2 is a view showing a state before contact between the chamfering grindstone and the plate-like body according to the embodiment of the present invention. FIG. 3 is a diagram showing a state at the time of contact between the chamfering grindstone and the plate-like body according to the embodiment of the present invention. FIG. 4 is a view showing a state after contact between the chamfering grindstone and the plate-like body according to the embodiment of the present invention.

面取工程では、面取砥石20でガラス基板10の内周端面を研削することにより、その内周端面に第1面取部11、第2面取部12および側面部13を形成する。尚、ガラス基板10の外周端面を研削して、その外周端面に面取部や側面部を形成する方法は同様であるので、説明を省略する。   In the chamfering step, the first chamfered portion 11, the second chamfered portion 12, and the side surface portion 13 are formed on the inner peripheral end surface by grinding the inner peripheral end surface of the glass substrate 10 with the chamfering grindstone 20. In addition, since the method of grinding the outer peripheral end surface of the glass substrate 10 and forming a chamfered part and a side part in the outer peripheral end surface is the same, description is abbreviate | omitted.

面取砥石20は、複数の砥粒および該複数の砥粒を結合する金属を有してよい。砥粒としては、ダイヤモンド砥粒、立方晶窒化ホウ素(CBN)砥粒、アルミナ砥粒、炭化珪素砥粒などが用いられる。面取砥石20は、砥粒をメッキで固定する電着砥石であってよい。尚、面取砥石20は、砥粒や金属粉末などを焼結してなるメタルボンド砥石でもよい。   The chamfering grindstone 20 may include a plurality of abrasive grains and a metal that bonds the plurality of abrasive grains. As the abrasive grains, diamond abrasive grains, cubic boron nitride (CBN) abrasive grains, alumina abrasive grains, silicon carbide abrasive grains and the like are used. The chamfering grindstone 20 may be an electrodeposition grindstone that fixes abrasive grains by plating. The chamfering grindstone 20 may be a metal bond grindstone formed by sintering abrasive grains or metal powder.

面取砥石20は、面取砥石20の中心線を中心に回転しながら、ガラス基板10の内周端面を研削する。ガラス基板10は、面取砥石20による研削時に、ガラス基板10の中心線を中心に回転させられてよい。面取砥石20の中心線と、ガラス基板10の中心線とは平行とされる。   The chamfering grindstone 20 grinds the inner peripheral end surface of the glass substrate 10 while rotating around the center line of the chamfering grindstone 20. The glass substrate 10 may be rotated around the center line of the glass substrate 10 when grinding with the chamfering grindstone 20. The center line of the chamfering grindstone 20 and the center line of the glass substrate 10 are parallel.

面取砥石20は、面取砥石20の外周に円環状の研削溝21を有し、研削溝21の壁面でガラス基板10の内周端面を研削することにより第1面取部11、第2面取部12および側面部13を形成する。研削溝21の断面形状は等脚台形状とされる。第1面取部11は第1主面15に対して斜めに接続され、第2面取部12は第2主面16に対して斜めに接続される。側面部13は、第1面取部11と第2面取部12との間に形成され、第1主面15および第2主面16に対して垂直とされてよい。   The chamfering grindstone 20 has an annular grinding groove 21 on the outer periphery of the chamfering grindstone 20, and the first chamfered portion 11, the second chamfering grindstone 20 by grinding the inner peripheral end surface of the glass substrate 10 with the wall surface of the grinding groove 21. A chamfered portion 12 and a side surface portion 13 are formed. The cross-sectional shape of the grinding groove 21 is an isosceles trapezoid. The first chamfered portion 11 is connected to the first main surface 15 at an angle, and the second chamfered portion 12 is connected to the second main surface 16 at an angle. The side surface portion 13 is formed between the first chamfered portion 11 and the second chamfered portion 12 and may be perpendicular to the first main surface 15 and the second main surface 16.

尚、本実施形態では、面取工程において、ガラス基板10の内周端面に第1面取部11と第2面取部12とを形成するが、面取部の数は1つでもよく、側面部13が第1主面15または第2主面16に対して垂直に接続されてもよい。ガラス基板10の外周端面について同様である。   In the present embodiment, in the chamfering step, the first chamfered portion 11 and the second chamfered portion 12 are formed on the inner peripheral end surface of the glass substrate 10, but the number of chamfered portions may be one, The side surface portion 13 may be connected perpendicularly to the first main surface 15 or the second main surface 16. The same applies to the outer peripheral end face of the glass substrate 10.

次に、説明の都合上、図7を参照して端面研磨工程について説明する。端面研磨工程の前に行われる面取部加工工程については後で説明する。   Next, for the sake of explanation, the end surface polishing step will be described with reference to FIG. The chamfered portion processing step performed before the end surface polishing step will be described later.

端面研磨工程では、回転ブラシ40でガラス基板10の内周端面を研磨する。尚、ガラス基板10の外周端面に形成される面取部や側面部を研磨する方法は同様であるので、説明を省略する。   In the end surface polishing step, the inner peripheral end surface of the glass substrate 10 is polished with the rotating brush 40. In addition, since the method of grind | polishing the chamfered part and side part formed in the outer peripheral end surface of the glass substrate 10 is the same, description is abbreviate | omitted.

回転ブラシ40は、ガラス基板10の第1主面15および第2主面16に対して垂直な回転軸41、および回転軸41の外周に取り付けられるブラシ毛42を有する。回転ブラシ40は、回転軸41を中心に回転しながら、ブラシ毛42で第1面取部11、第2面取部12、および側面部13を研磨する。   The rotating brush 40 has a rotating shaft 41 perpendicular to the first main surface 15 and the second main surface 16 of the glass substrate 10, and brush hairs 42 attached to the outer periphery of the rotating shaft 41. The rotating brush 40 polishes the first chamfered portion 11, the second chamfered portion 12, and the side surface portion 13 with the brush bristles 42 while rotating around the rotating shaft 41.

回転ブラシ40によるガラス基板10の研磨部位には、ノズルから研磨液が供給される。研磨液は研磨材を含み、研磨材としては例えば酸化セリウム砥粒などが用いられる。   A polishing liquid is supplied from the nozzle to the polishing portion of the glass substrate 10 by the rotating brush 40. The polishing liquid contains an abrasive, and for example, cerium oxide abrasive grains are used as the abrasive.

端面研磨工程では、複数のガラス基板10が積層され、まとめて研磨されてもよい。この場合、ガラス基板10同士の間にはスペーサが配設されてよい。回転ブラシ40は、回転軸41の中心線を中心に回転させられながら、ガラス基板10の積層方向(回転軸41の中心線と平行な方向)に揺動させられる。   In the end surface polishing step, a plurality of glass substrates 10 may be laminated and polished together. In this case, a spacer may be disposed between the glass substrates 10. The rotating brush 40 is swung in the stacking direction of the glass substrates 10 (direction parallel to the center line of the rotating shaft 41) while being rotated about the center line of the rotating shaft 41.

ガラス基板10の側面部13に比べて、ガラス基板10の第1面取部11および第2面取部12は、回転ブラシ40の回転軸41から遠く、ブラシ毛42で研磨されにくい。特に、第1面取部11のうち第1面取部11と第1主面15との境界17付近、および第2面取部12のうち第2面取部12と第2主面16との境界18付近は、回転ブラシ40の回転軸41から遠く、ブラシ毛42で研磨されにくい。そのため、側面部13の研磨量に比べて、第1面取部11や第2面取部12の研磨量は少ない。   Compared to the side surface portion 13 of the glass substrate 10, the first chamfered portion 11 and the second chamfered portion 12 of the glass substrate 10 are far from the rotation shaft 41 of the rotating brush 40 and are not easily polished by the brush bristles 42. In particular, the vicinity of the boundary 17 between the first chamfered portion 11 and the first main surface 15 in the first chamfered portion 11, and the second chamfered portion 12 and the second main surface 16 in the second chamfered portion 12. The vicinity of the boundary 18 is far from the rotation shaft 41 of the rotary brush 40 and is not easily polished by the brush bristles 42. Therefore, the polishing amount of the first chamfered portion 11 and the second chamfered portion 12 is smaller than the polishing amount of the side surface portion 13.

そこで、本実施形態では、面取工程の後、端面研磨工程の前に、面取部加工工程が行われる。以下、図5〜図6を参照して面取部加工工程について説明する。図5は、本発明の一実施形態によるゴム砥石と板状体との接触前の状態を示す図である。図6は、本発明の一実施形態によるゴム砥石と板状体との接触時の状態を示す図である。   Therefore, in this embodiment, the chamfered portion processing step is performed after the chamfering step and before the end surface polishing step. Hereinafter, the chamfered portion machining step will be described with reference to FIGS. FIG. 5 is a view showing a state before contact between the rubber grindstone and the plate-like body according to the embodiment of the present invention. FIG. 6 is a view showing a state at the time of contact between the rubber grindstone and the plate-like body according to the embodiment of the present invention.

面取部加工工程は、面取工程の後、端面研磨工程の前に、ガラス基板10の内周端面に形成された第1面取部11および第2面取部12をゴム砥石30で加工する。尚、ガラス基板10の外周端面に形成された面取部を加工する方法は同様であるので、説明を省略する。   In the chamfered portion processing step, the first chamfered portion 11 and the second chamfered portion 12 formed on the inner peripheral end surface of the glass substrate 10 are processed by the rubber grindstone 30 after the chamfering step and before the end surface polishing step. To do. In addition, since the method of processing the chamfered part formed in the outer peripheral end surface of the glass substrate 10 is the same, description is abbreviate | omitted.

端面研磨工程では、上述の如く、第1面取部11や第2面取部12の研磨量が側面部13の研磨量よりも少ない。そこで、端面研磨工程の前に、面取部加工工程によって、第1面取部11や第2面取部12における加工変質層の厚みを低減しておく。これにより、ガラス基板10の形状崩れを抑制しつつ、第1面取部11、第2面取部12および側面部13から加工変質層を除去できる。また、端面研磨工程の時間が短く、生産性が良い。端面研磨工程の時間が短いため、回転ブラシ40の摩耗が抑制できる。   In the end surface polishing step, the polishing amount of the first chamfered portion 11 and the second chamfered portion 12 is smaller than the polished amount of the side surface portion 13 as described above. Therefore, the thickness of the work-affected layer in the first chamfered portion 11 and the second chamfered portion 12 is reduced by the chamfered portion machining step before the end surface polishing step. Thereby, the work-affected layer can be removed from the first chamfered portion 11, the second chamfered portion 12, and the side surface portion 13 while suppressing the shape collapse of the glass substrate 10. Further, the time for the end face polishing step is short, and the productivity is good. Since the time of the end surface polishing process is short, the wear of the rotating brush 40 can be suppressed.

ガラス基板10の内周端面は、ガラス基板10の外周端面と異なり、回転チャックなどで保持されることがある。本実施形態によれば、ガラス基板10の内周端面の形状崩れが抑制できるため、回転基準面としての内周端面の精度が良い。また、本実施形態によれば、ガラス基板10の内周端面の加工変質層が除去できるため、チャッキングによるガラス基板10の割れが防止できる。   Unlike the outer peripheral end surface of the glass substrate 10, the inner peripheral end surface of the glass substrate 10 may be held by a rotary chuck or the like. According to this embodiment, since the shape collapse of the inner peripheral end surface of the glass substrate 10 can be suppressed, the accuracy of the inner peripheral end surface as the rotation reference surface is good. Moreover, according to this embodiment, since the work-affected layer on the inner peripheral end face of the glass substrate 10 can be removed, the glass substrate 10 can be prevented from cracking due to chucking.

面取部工程では、第1面取部11や第2面取部12における加工変質層が完全に除去されなくてもよいし、完全に除去されてもよい。尚、面取部工程では、第1面取部11や第2面取部12が側面部13よりも研磨されやすければよく、側面部13も研磨されてもよい。   In the chamfered part process, the work-affected layer in the first chamfered part 11 and the second chamfered part 12 may not be completely removed or may be completely removed. In the chamfering step, the first chamfered portion 11 and the second chamfered portion 12 need only be more easily polished than the side surface portion 13, and the side surface portion 13 may also be polished.

ゴム砥石30は、複数の砥粒および該複数の砥粒を結合するゴムを有する。ゴム砥石30は、第1面取部11と接触する第1加工面31、および第2面取部12と接触する第2加工面32を有する。ゴム砥石30は、第1加工面31と第2加工面32との組を複数組有してよい。   The rubber grindstone 30 has a plurality of abrasive grains and rubber that binds the plurality of abrasive grains. The rubber grindstone 30 has a first processed surface 31 that contacts the first chamfered portion 11 and a second processed surface 32 that contacts the second chamfered portion 12. The rubber grindstone 30 may have a plurality of sets of the first processed surface 31 and the second processed surface 32.

面取部加工工程では、第1加工面31と第2加工面32との間にガラス基板10を挿入して第1加工面31と第2加工面32との間に形成される隙間33を押し広げ、第1加工面31で第1面取部11を加工すると共に、第2加工面32で第2面取部12を加工する。この方法によれば、第1面取部11や第2面取部12が側面部13よりも研磨されやすい。また、この方法によれば、ゴム砥石30が摩耗した場合に、ガラス基板10をより深く挿入することで、第1加工面31で第1面取部11を加工すると共に、第2加工面32で第2面取部12を加工することができる。そのため、長時間の使用が可能である。   In the chamfered portion machining step, the glass substrate 10 is inserted between the first machining surface 31 and the second machining surface 32 to form a gap 33 formed between the first machining surface 31 and the second machining surface 32. The first chamfered portion 11 is processed with the first processed surface 31 and the second chamfered portion 12 is processed with the second processed surface 32. According to this method, the first chamfered portion 11 and the second chamfered portion 12 are more easily polished than the side surface portion 13. Further, according to this method, when the rubber grindstone 30 is worn, the first chamfered portion 11 is processed by the first processed surface 31 and the second processed surface 32 by inserting the glass substrate 10 deeper. Thus, the second chamfered portion 12 can be processed. Therefore, it can be used for a long time.

尚、ゴム砥石30の代わりに、レジンボンド砥石を用いる場合、長時間の使用が困難である。レジンボンド砥石は、結合材として熱硬化性樹脂を含むため、ゴム砥石と異なりほとんど弾性変形しない。レジンボンド砥石の外周には円環状の研削溝が形成され、研削溝の断面形状は等脚台形状とされる。ガラス基板の端面は研削溝の壁面の断面形状に研磨される。そのため、摩耗によって研削溝の壁面の断面形状が崩れると、ガラス基板の端面を目的の形状に加工することが困難となり、長時間の使用が困難である。   In addition, when using a resin bond grindstone instead of the rubber grindstone 30, long-time use is difficult. Since the resin bond grindstone includes a thermosetting resin as a binder, it hardly deforms elastically unlike a rubber grindstone. An annular grinding groove is formed on the outer periphery of the resin bond grindstone, and the cross-sectional shape of the grinding groove is an isosceles trapezoid. The end surface of the glass substrate is polished to the cross-sectional shape of the wall surface of the grinding groove. Therefore, when the cross-sectional shape of the wall surface of the grinding groove is broken due to wear, it is difficult to process the end surface of the glass substrate into a target shape, and it is difficult to use the glass substrate for a long time.

隙間33は、ガラス基板10の挿入前において、図5に示すようにゴム砥石30の外周(ガラス基板10の挿入口)から内側に向けて連続的に狭くなってよい。ガラス基板10の挿入をガイドすることができる。図5に示すように、隙間33の奥の方では、第1加工面31と第2加工面32とが接触してもよい。   Before the glass substrate 10 is inserted, the gap 33 may be continuously narrowed from the outer periphery of the rubber grindstone 30 (the insertion opening of the glass substrate 10) to the inside as shown in FIG. Insertion of the glass substrate 10 can be guided. As shown in FIG. 5, the first processed surface 31 and the second processed surface 32 may be in contact with each other at the back of the gap 33.

第1加工面31および第2加工面32には、ガラス基板10の挿入をガイドするガイドテーパ31a、32aが形成されてよい。ガイドテーパ31a、32a同士の間隔は、ガラス基板10の挿入前において、ゴム砥石30の外周から内側に向けて連続的に狭くなる。   Guide tapers 31 a and 32 a that guide the insertion of the glass substrate 10 may be formed on the first processed surface 31 and the second processed surface 32. The interval between the guide tapers 31a and 32a is continuously narrowed from the outer periphery to the inner side of the rubber grindstone 30 before the glass substrate 10 is inserted.

尚、本実施形態の隙間33は、ガラス基板10の挿入前において、図5に示すようにゴム砥石30の外周から内側に向けて連続的に狭くなるが、段階的に狭くなってもよい。   The gap 33 of the present embodiment continuously narrows from the outer periphery to the inner side of the rubber grindstone 30 as shown in FIG. 5 before the glass substrate 10 is inserted, but may be narrowed step by step.

隙間33の挿入口の間隔Sは、ガラス基板10の挿入前において、ガラス基板10の厚みTよりも小さくてよい。ガラス基板10の挿入時に、隙間33の挿入口が押し広げられるため、ゴム砥石30の弾性復元力が強く、第1加工面31が第1面取部11に密着し、第2加工面32が第2面取部12に密着する。   The interval S between the insertion openings of the gap 33 may be smaller than the thickness T of the glass substrate 10 before the glass substrate 10 is inserted. When the glass substrate 10 is inserted, the insertion opening of the gap 33 is pushed wide, so that the elastic restoring force of the rubber grindstone 30 is strong, the first processing surface 31 is in close contact with the first chamfered portion 11, and the second processing surface 32 is Close contact with the second chamfer 12.

尚、本実施形態の隙間33は、ガラス基板10の挿入前において、図5に示すようにゴム砥石30の外周(ガラス基板10の挿入口)から内側に向けて狭くなるが、一定でもよい。ガラス基板10の挿入前において、第1加工面31と第2加工面32とが全体的に接触してもよい。   Note that the gap 33 of the present embodiment narrows from the outer periphery of the rubber grindstone 30 (the insertion opening of the glass substrate 10) toward the inside before the glass substrate 10 is inserted, but may be constant. Before the glass substrate 10 is inserted, the first processed surface 31 and the second processed surface 32 may be in contact with each other.

ゴム砥石30のゴムは、天然ゴム、合成ゴムのいずれでもよい。天然ゴムは、例えばポリイソプレンを主成分とするゴムである。合成ゴムとしては、例えばブタジエンゴム、クロロプレンゴム、プロピレンゴム、ポリイソブチレンゴムなどが挙げられる。結合材がゴムであるゴム砥石30は結合材が熱硬化性樹脂であるレジンボンド砥石と異なり弾性変形できる。そのため、第1加工面31と第2加工面32との間にガラス基板10を挿入して隙間33を押し広げることができる。   The rubber of the rubber grindstone 30 may be either natural rubber or synthetic rubber. Natural rubber is rubber which has polyisoprene as a main ingredient, for example. Examples of the synthetic rubber include butadiene rubber, chloroprene rubber, propylene rubber, and polyisobutylene rubber. Unlike the resin bond grindstone in which the binder is a thermosetting resin, the rubber grindstone 30 in which the binder is rubber can be elastically deformed. Therefore, it is possible to insert the glass substrate 10 between the first processed surface 31 and the second processed surface 32 and to widen the gap 33.

ゴム砥石30のSHORE−D硬度(日本工業規格JIS K6253)は、例えば20〜90である。上記SHORE−D硬度は、ゴムのみの硬度ではなく、ゴムで砥粒を結合した物の硬度である。上記SHORE−D硬度が90以下であると、第1加工面31と第2加工面32との間にガラス基板10を挿入して隙間33を押し広げる際にゴム砥石30が弾性変形し易く、ゴム砥石30の破損が抑制できる。また、上記SHORE−D硬度が20以上であると、砥石自体の強度が良好であり、加工変質層の厚みが効率良く低減できる。上記SHORE−D硬度は、好ましくは20〜85、特に好ましくは20〜80である。   The SHORE-D hardness (Japanese Industrial Standard JIS K6253) of the rubber grindstone 30 is, for example, 20 to 90. The SHORE-D hardness is not the hardness of rubber alone, but the hardness of a product obtained by bonding abrasive grains with rubber. When the SHORE-D hardness is 90 or less, the rubber grindstone 30 is easily elastically deformed when the glass substrate 10 is inserted between the first processed surface 31 and the second processed surface 32 and the gap 33 is expanded, Damage to the rubber grindstone 30 can be suppressed. Further, when the SHORE-D hardness is 20 or more, the strength of the grindstone itself is good, and the thickness of the work-affected layer can be efficiently reduced. The SHORE-D hardness is preferably 20 to 85, particularly preferably 20 to 80.

ゴム砥石30の砥粒としては、ダイヤモンド砥粒、立方晶窒化ホウ素(CBN)砥粒、アルミナ砥粒、炭化珪素砥粒などが用いられる。   As abrasive grains of the rubber grindstone 30, diamond abrasive grains, cubic boron nitride (CBN) abrasive grains, alumina abrasive grains, silicon carbide abrasive grains, and the like are used.

ゴム砥石30の砥粒の平均粒径は、例えば18〜125μmである。ゴム砥石30の砥粒の平均粒径が18μm以上の場合、加工変質層の厚みを効率良く低減できる。ゴム砥石30の砥粒の平均粒径が125μm以下の場合、ゴム砥石30の砥粒による新たなキズやクラックの形成が抑制できる。砥粒の平均粒径は、個数平均径であって、電気抵抗法(コールター法)により測定できる。   The average particle diameter of the abrasive grains of the rubber grindstone 30 is, for example, 18 to 125 μm. When the average particle diameter of the abrasive grains of the rubber grindstone 30 is 18 μm or more, the thickness of the work-affected layer can be efficiently reduced. When the average particle diameter of the abrasive grains of the rubber grindstone 30 is 125 μm or less, the formation of new scratches and cracks due to the abrasive grains of the rubber grindstone 30 can be suppressed. The average particle diameter of the abrasive grains is the number average diameter and can be measured by an electric resistance method (Coulter method).

ゴム砥石30に占める砥粒の割合(砥粒とゴムの合計量を100体積%とした場合の砥粒の割合、以下、「砥粒の含有量」という)は、例えば12〜50体積%である。砥粒の含有量が50体積%以下の場合、ゴムによって砥粒を十分に結合できる。砥粒の含有量が12体積%以上の場合、加工変質層の厚みを効率良く低減できる。   The ratio of abrasive grains in the rubber grindstone 30 (ratio of abrasive grains when the total amount of abrasive grains and rubber is 100% by volume, hereinafter referred to as “abrasive grain content”) is, for example, 12 to 50% by volume. is there. When the content of abrasive grains is 50% by volume or less, the abrasive grains can be sufficiently bonded with rubber. When the content of abrasive grains is 12% by volume or more, the thickness of the work-affected layer can be efficiently reduced.

図8は、本発明の一実施形態による面取砥石およびゴム砥石を含む砥石ユニットを示す断面図である。   FIG. 8 is a cross-sectional view showing a grindstone unit including a chamfering grindstone and a rubber grindstone according to an embodiment of the present invention.

砥石ユニットは、面取砥石20とゴム砥石30とを含む。面取砥石20の中心線とゴム砥石30の中心線とは同一直線上に配設されてよい。面取砥石20とゴム砥石30とはそれぞれの中心線を中心に同時に回転される。砥石ユニットをその中心線を中心に回転させる機械を用いて、面取工程と面取部加工工程とを行うことができる。   The grindstone unit includes a chamfering grindstone 20 and a rubber grindstone 30. The center line of the chamfering grindstone 20 and the center line of the rubber grindstone 30 may be arranged on the same straight line. The chamfering grindstone 20 and the rubber grindstone 30 are simultaneously rotated around their respective center lines. A chamfering step and a chamfered portion machining step can be performed using a machine that rotates the grindstone unit about its center line.

面取砥石20は、1次面取砥石部23と2次面取砥石部24とを有してよい。1次面取砥石部23の外周には円環状の研削溝が複数形成され、同様に、2次面取砥石部24の外周には円環状の研削溝が複数形成される。   The chamfering grindstone 20 may have a primary chamfering grindstone portion 23 and a secondary chamfering grindstone portion 24. A plurality of annular grinding grooves are formed on the outer periphery of the primary chamfering grindstone portion 23, and similarly, a plurality of annular grinding grooves are formed on the outer periphery of the secondary chamfering grindstone portion 24.

ガラス基板10は、1次面取砥石部23の研削溝に挿入され当該研削溝の壁面で研削された後、2次面取砥石部24の研削溝に挿入され当該研削溝の壁面で研削される。2次面取砥石部24の砥粒の平均粒径は、1次面取砥石部23の砥粒の平均粒径よりも小さくてよい。   The glass substrate 10 is inserted into the grinding groove of the primary chamfering grindstone portion 23 and ground on the wall surface of the grinding groove, and then inserted into the grinding groove of the secondary chamfering grindstone portion 24 and ground on the wall surface of the grinding groove. The The average particle size of the abrasive grains of the secondary chamfering grindstone portion 24 may be smaller than the average particle size of the abrasive grains of the primary chamfering grindstone portion 23.

尚、面取砥石20は3次面取砥石部をさらに有してもよく、面取砥石部の数は限定されない。   The chamfering grindstone 20 may further include a tertiary chamfering grindstone portion, and the number of chamfering grindstone portions is not limited.

面取砥石20とゴム砥石30とは脱着自在とされてもよい。例えばゴム砥石30には雄ネジ39が形成され、面取砥石20には雌ネジ29が形成され、雄ネジ39と雌ネジ29との螺合によって面取砥石20とゴム砥石30とが連結される。尚、雄ネジと雌ネジの配置は逆でもよく、ゴム砥石30に雌ネジが形成され、面取砥石20に雄ネジが形成されてもよい。   The chamfering grindstone 20 and the rubber grindstone 30 may be detachable. For example, a male screw 39 is formed on the rubber grindstone 30, and a female screw 29 is formed on the chamfering grindstone 20. The The arrangement of the male screw and the female screw may be reversed, the female screw may be formed on the rubber grindstone 30, and the male screw may be formed on the chamfering grindstone 20.

[例1〜6]例1〜6では、それぞれ、中心部に円孔を有する円盤状のガラス基板を用意し、面取工程、面取部加工工程、端面研磨工程をこの順で行うことを100回繰り返し、100枚の磁気記録媒体用カラス基板を作製した。例1〜6では、表1に示す条件以外の条件は同じとした。   [Examples 1 to 6] In Examples 1 to 6, a disk-shaped glass substrate having a circular hole at the center is prepared, and the chamfering step, the chamfered portion processing step, and the end surface polishing step are performed in this order. Repeated 100 times, 100 crow substrates for magnetic recording media were produced. In Examples 1 to 6, conditions other than those shown in Table 1 were the same.

面取工程では、番手#325の電着ダイヤモンド砥石、および番手#600の電着ダイヤモンド砥石をこの順で用いてガラス基板の内周端面に第1面取部、第2面取部、および側面部を形成した。面取工程によって、板厚が0.9mm、内径が20mm、外径が65mm、面取長さL(図4参照)が0.18mm、面取角度θ(図4参照)が45°のガラス基板が得られた。面取工程後のガラス基板の形状、寸法は、各例において1枚目から100枚目まで安定していた。   In the chamfering step, the electrodeposited diamond grindstone of count # 325 and the electrodeposited diamond grindstone of count # 600 are used in this order in order to form the first chamfered portion, the second chamfered portion, and the side surface on the inner peripheral end surface of the glass substrate. Part was formed. Glass with a plate thickness of 0.9 mm, an inner diameter of 20 mm, an outer diameter of 65 mm, a chamfer length L (see FIG. 4) of 0.18 mm, and a chamfer angle θ (see FIG. 4) of 45 ° by the chamfering process. A substrate was obtained. The shape and dimensions of the glass substrate after the chamfering process were stable from the first sheet to the 100th sheet in each example.

面取部加工工程では、表1に示すように、例1〜4ではゴム砥石を用い、例5ではレジンボンド砥石を用い、例6ではビトリファイドボンド砥石を用いた。例1〜4では、図6に示すようにゴム砥石の第1加工面と第2加工面との間にガラス基板を挿入して第1加工面と第2加工面との間の隙間を押し広げ、第1加工面で第1面取部を、第2加工面で第2面取部を加工した。例5では、レジンボンド砥石の外周に形成される研削溝の壁面にガラス基板を押し付けて、第1面取部、第2面取部、および側面部を加工した。例6では、ビトリファイドボンド砥石の外周に形成される研削溝の壁面にガラス基板を押し付けて、第1面取部、第2面取部、および側面部を加工した。各例において、1枚目から100枚目まで、ゴム砥石など(レジンボンド砥石、ビトリファイドボンド砥石を含む)の回転中心と、ガラス基板の回転中心との距離は一定とした。   In the chamfered portion machining step, as shown in Table 1, rubber grindstones were used in Examples 1 to 4, resin bond grindstones were used in Example 5, and vitrified bond grindstones were used in Example 6. In Examples 1 to 4, as shown in FIG. 6, a glass substrate is inserted between the first processing surface and the second processing surface of the rubber grindstone to push the gap between the first processing surface and the second processing surface. The first chamfered portion was processed on the first processed surface and the second chamfered portion was processed on the second processed surface. In Example 5, the glass substrate was pressed against the wall surface of the grinding groove formed on the outer periphery of the resin bond grindstone to process the first chamfered portion, the second chamfered portion, and the side surface portion. In Example 6, the glass substrate was pressed against the wall surface of the grinding groove formed on the outer periphery of the vitrified bond grindstone to process the first chamfered portion, the second chamfered portion, and the side surface portion. In each example, the distance between the center of rotation of the glass substrate and the center of rotation of the glass substrate was constant from the 1st sheet to the 100th sheet, such as a rubber grindstone (including a resin bond grindstone and a vitrified bond grindstone).

ゴム砥石のSHORE−D硬度は、ゴム硬度計(Bareiss社製、デジテストII BS06)により測定した。測定条件は、JIS K6253に準拠した。レジンボンド砥石やビトリファイドボンド砥石は、硬すぎるため、硬度を測定できなかった。   The SHORE-D hardness of the rubber grindstone was measured with a rubber hardness meter (manufactured by Bareiss, Digitest II BS06). Measurement conditions were based on JIS K6253. The resin bond grindstone and the vitrified bond grindstone were too hard to measure the hardness.

ゴム砥石などの砥粒の平均粒子径は、粒度分布測定装置(Beckman Coulter社製、Multisizer3)を用いて測定した。   The average particle diameter of abrasive grains such as a rubber grindstone was measured using a particle size distribution measuring device (manufactured by Beckman Coulter, Multisizer 3).

面取部加工工程の後、端面研磨工程の前に、内径測定機(Keyence社製、VM8040)によりガラス基板の内径を測定し、1枚目と100枚目との内径差を内径変化として求めた。内径変化の評価では、1枚目と100枚目の内径差が4μm以下の場合を「A」、4μmよりも大きく8μmよりも小さい場合を「B」、8μm以上の場合を「C」とした。   After the chamfered part processing step and before the end surface polishing step, the inner diameter of the glass substrate is measured by an inner diameter measuring machine (manufactured by Keyence, VM8040), and the inner diameter difference between the first sheet and the 100th sheet is obtained as the inner diameter change. It was. In the evaluation of the inner diameter change, “A” is the case where the inner diameter difference between the first sheet and the 100th sheet is 4 μm or less, “B” when the difference is larger than 4 μm and smaller than 8 μm, and “C” when the difference is 8 μm or more. .

また、面取部加工工程の後、端面研磨工程の前に、第1面取部の表面粗さをレーザ顕微鏡(Olympus社製、LEXT OLS4000)により測定した。対物レンズの倍率は20倍、カットオフ値は0.08mmとした。尚、第1面取部の表面粗さと、第2面取部の表面粗さとは略同一であった。   Further, the surface roughness of the first chamfered portion was measured with a laser microscope (OLYmpus, LEXT OLS4000) after the chamfered portion processing step and before the end face polishing step. The magnification of the objective lens was 20 times, and the cutoff value was 0.08 mm. The surface roughness of the first chamfered portion and the surface roughness of the second chamfered portion were substantially the same.

端面研磨工程では、面取部加工後のガラス基板の内周端面を回転ブラシで研磨した。回転ブラシによる研磨部位には、酸化セリウムを含む研磨液を供給した。研磨量は13μmとした。端面研磨工程後、加工変質層の有無を評価した。   In the end surface polishing step, the inner peripheral end surface of the glass substrate after the chamfered portion processing was polished with a rotating brush. A polishing liquid containing cerium oxide was supplied to a polishing portion with a rotating brush. The polishing amount was 13 μm. After the end face polishing step, the presence or absence of a work-affected layer was evaluated.

加工変質層の有無は、端面研磨工程後のガラス基板を、フッ酸を含有する酸性溶液に浸漬して5μmエッチングすることにより調べた。加工変質層が残る場合、キズなどを中心に等方的にエッチングが進み、ディンプルが形成される。このディンプルの有無をレーザ顕微鏡で調べることにより、加工変質層の有無を調べた。加工変質層の有無の評価では、加工変質層が残る場合を「A」、残らない場合を「B」とした。   The presence or absence of the work-affected layer was examined by immersing the glass substrate after the end face polishing step in an acidic solution containing hydrofluoric acid and etching it by 5 μm. When the work-affected layer remains, etching progresses isotropically centering on scratches and the like, and dimples are formed. The presence or absence of the work-affected layer was examined by examining the presence or absence of the dimple with a laser microscope. In the evaluation of the presence or absence of the work-affected layer, the case where the work-affected layer remains was “A”, and the case where it did not remain was “B”.

試験結果を、試験条件と共に表1に示す。   The test results are shown in Table 1 together with the test conditions.

Figure 0006299369
表1から明らかなように、例1〜4では、面取部加工工程においてゴム砥石を用いたため、1枚目と100枚目とでガラス基板の内径差が小さく、面取部の表面粗さRaが0.3μm以下であり、端面研磨工程後に加工変質層が残らなかった。一方、例5では、面取部加工工程においてレジンボンド砥石を用いたため、砥石の摩耗によるガラス基板の形状変化が大きく、1枚目と100枚目とでガラス基板の内径差が大きかった。また、例6では、面取部加工工程においてビトリファイドボンド砥石を用いたため、砥石の摩耗によるガラス基板の形状変化が大きく、1枚目と100枚目とでガラス基板の内径差が大きかった。さらに例6では、ビトリファイドボンド砥石を用いたため、面取部の表面粗さが大きかった。
Figure 0006299369
As is clear from Table 1, in Examples 1 to 4, since the rubber grindstone was used in the chamfered portion processing step, the difference in the inner diameter of the glass substrate was small between the first and the 100th and the surface roughness of the chamfered portion. Ra was 0.3 μm or less, and no work-affected layer remained after the end face polishing step. On the other hand, in Example 5, since a resin bond grindstone was used in the chamfered portion machining step, the shape change of the glass substrate due to wear of the grindstone was large, and the inner diameter difference between the first and the 100th glass substrate was large. In Example 6, since a vitrified bond grindstone was used in the chamfered portion machining step, the shape change of the glass substrate due to wear of the grindstone was large, and the inner diameter difference between the first and the 100th glass substrate was large. Furthermore, in Example 6, since the vitrified bond grindstone was used, the surface roughness of the chamfered portion was large.

以上、板状体としての磁気記録媒体用ガラス基板の製造方法の実施形態などを説明したが、本発明は上記実施形態などに限定されず、特許請求の範囲に記載された本発明の要旨の範囲内において、種々の変形、改良が可能である。   As mentioned above, although embodiment of the manufacturing method of the glass substrate for magnetic recording media as a plate-shaped object was described, this invention is not limited to the said embodiment etc., The summary of this invention described in the claim Various modifications and improvements are possible within the range.

例えば、板状体としての磁気記録媒体用ガラス基板の製造方法は図1に示すように素板加工工程(ステップS11)および主面研磨工程(ステップS15)を有するが、板状体の種類によっては、素板加工工程および主面研磨工程がなくてもよい。   For example, the method of manufacturing a glass substrate for a magnetic recording medium as a plate has a base plate processing step (step S11) and a main surface polishing step (step S15) as shown in FIG. 1, depending on the type of plate. May not have a base plate processing step and a main surface polishing step.

10 ガラス基板
11 第1面取部
12 第2面取部
13 側面部
15 第1主面
16 第2主面
20 面取砥石
21 研削溝
30 ゴム砥石
31 第1加工面
32 第2加工面
33 隙間
40 回転ブラシ
41 回転軸
42 ブラシ毛
DESCRIPTION OF SYMBOLS 10 Glass substrate 11 1st chamfering part 12 2nd chamfering part 13 Side surface part 15 1st main surface 16 2nd main surface 20 Chamfering grindstone 21 Grinding groove 30 Rubber grindstone 31 1st process surface 32 2nd process surface 33 Crevice 40 Rotating brush 41 Rotating shaft 42 Brush hair

Claims (8)

第1主面と第2主面と端面とを備える板状体の前記端面に面取部および側面部を形成する面取工程と、前記面取部および前記側面部を回転ブラシで研磨する端面研磨工程とを有する、板状体の製造方法であって、
前記面取工程の後、前記端面研磨工程の前に、前記面取部をゴム砥石で加工する面取部加工工程を有し、
前記面取部は、前記第1主面側の第1面取部と前記第2主面側の第2面取部とを有し、
前記ゴム砥石は、複数の砥粒および該複数の砥粒を結合するゴムを有し、且つ、前記板状体と接触する第1加工面および第2加工面を有し、
前記面取部加工工程では、前記第1加工面が前記第1面取部に接すると共に前記第2加工面が前記第2面取部と接するように前記第1加工面と前記第2加工面との間に前記板状体を挿入し、前記第1加工面と前記第2加工面と前記側面部とで取り囲まれる空間が形成されるように前記第1加工面と前記第2加工面との間に形成される隙間を押し広げ、前記第1加工面で前記第1面取部を加工すると共に前記第2加工面で前記第2面取部を加工する、板状体の製造方法。
A chamfering step of forming a chamfered portion and a side portion on the end face of the plate-like body and a first major surface and a second major surface and the end face, the end face is polished by a rotating brush the chamfered portion and the side portions A method for producing a plate-like body, comprising a polishing step,
After the chamfering step, before the end face polishing step, it has a chamfered portion processing step of processing the chamfered portion with a rubber grindstone,
The chamfered portion has a first chamfered portion on the first main surface side and a second chamfered portion on the second main surface side,
The rubber grindstone has a plurality of abrasive grains and a rubber that binds the plurality of abrasive grains, and has a first processing surface and a second processing surface that come into contact with the plate-like body,
In the chamfered portion processing step, the first processed surface and the second processed surface so that the first processed surface is in contact with the first chamfered portion and the second processed surface is in contact with the second chamfered portion. the plate-like body is inserted, said second working surface and said first work surface and the second processing surface and the side surface portion and the first processing surface before SL such that a space is formed which is surrounded by between And manufacturing the plate-like body by expanding the gap formed between the first processed surface and processing the first chamfered portion on the first processed surface and processing the second chamfered portion on the second processed surface. .
前記隙間は、前記板状体の挿入前において前記ゴム砥石の外周から内側に向けて狭くなる、請求項1に記載の板状体の製造方法。   The said clearance gap is a manufacturing method of the plate-shaped object of Claim 1 which becomes narrow toward the inner side from the outer periphery of the said rubber grindstone before insertion of the said plate-shaped object. 前記隙間の挿入口の間隔は、前記板状体の挿入前において前記板状体の厚さよりも小さい、請求項1または2に記載の板状体の製造方法。   The plate-like body manufacturing method according to claim 1 or 2, wherein an interval between the insertion openings of the gap is smaller than a thickness of the plate-like body before the plate-like body is inserted. 前記ゴム砥石のSHORE−D硬度が20〜90である、請求項1〜3のいずれか1項に記載の板状体の製造方法。   The manufacturing method of the plate-shaped object of any one of Claims 1-3 whose SHORE-D hardness of the said rubber grindstone is 20-90. 前記ゴム砥石の前記砥粒の平均粒子径が18〜125μmである、請求項1〜4のいずれか1項に記載の板状体の製造方法。   The manufacturing method of the plate-shaped body of any one of Claims 1-4 whose average particle diameter of the said abrasive grain of the said rubber grindstone is 18-125 micrometers. 前記ゴム砥石に占める前記砥粒の割合が12〜50体積%である、請求項1〜5のいずれか1項に記載の板状体の製造方法。   The manufacturing method of the plate-shaped object of any one of Claims 1-5 whose ratio of the said abrasive grain which occupies for the said rubber grindstone is 12-50 volume%. 前記板状体はガラス板である、請求項1〜6のいずれか1項に記載の板状体の製造方法。   The said plate-shaped body is a manufacturing method of the plate-shaped body of any one of Claims 1-6 which is a glass plate. 前記端面研磨工程後、前記板状体に化学強化を実施する、請求項1〜7のいずれか1項に記載の板状体の製造方法。The manufacturing method of the plate-shaped object of any one of Claims 1-7 which implements chemical strengthening to the said plate-shaped object after the said end surface grinding | polishing process.
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