JP6291710B2 - High frequency amplifier - Google Patents

Description

  The present invention relates to an amplifier, and more particularly to a high-frequency amplifier including a detection circuit that attenuates higher harmonics and accurately detects a high-frequency signal.

  In recent years, data communication using a wireless LAN has been generalized, and the importance of wireless communication devices has been increasing. A high-frequency amplifier has a function of amplifying an input signal with a transistor and transmitting the amplified signal to the outside. The high-frequency amplifier is also incorporated in a mobile communication device such as a mobile phone and is widely used in a wireless communication device.

  Here, the detection circuit in the wireless communication apparatus is used to automatically control the gain of the amplifier and mixer of the reception system according to the intensity of the reception signal input from the antenna, or to detect the output signal level of the high-frequency amplifier to transmit the signal. It is used to automatically control the gain of the high frequency amplifier, and is an important circuit for the high frequency amplifier.

  For example, Patent Document 1 below discloses a detection circuit configured with a mean-square circuit using a transistor smaller than an amplifying transistor.

  When the output matching circuit of a high frequency amplifier is configured on a semiconductor integrated circuit board in a transmitter of a wireless communication device, the output matching circuit cannot be adjusted and a chip inductor or chip capacitor having a high Q value is used. It is impossible to reduce transmission loss. For this reason, the output matching circuit of the high-power amplifier is configured on the semiconductor mounting substrate, not on the semiconductor integrated circuit substrate. In recent years, since the miniaturization has progressed, it is the mainstream to configure the detection circuit on a semiconductor integrated circuit substrate.

  In addition, WiMAX, which is a high-speed wireless communication standard, uses an OFDM (Orthogonal Frequency Division Multiplexing) system, and the transmission power of the slave unit is as high as 200 mW, so the power consumption of the transmitter is reduced. Harmonics are generated from the reduced amplifier.

  FIG. 10 will be described as a conventional example. A power amplifier 101, a detector circuit 102, a harmonic attenuator circuit 105, and a capacitor 106 are formed on the semiconductor integrated circuit board 107. The output side of the power amplifier 101 and the input side of the output matching circuit 103 are connected to the connecting member 104. The output side of the power amplifying unit 101 is connected to the input side of the harmonic attenuation circuit 105 via the capacitor 106, and the output side of the harmonic attenuation circuit 105 is the input of the detection circuit 102. Connected to the side.

  A high-frequency signal including harmonics generated in the power amplification unit 101 is branched to the connection member 104 and the capacitor 106. The high-frequency signal including one of the branched harmonics is input to the input side of the output matching circuit 103 via the connecting member 104, and the harmonics are attenuated by the output matching circuit 103 having a function of attenuating the harmonics. The fundamental wave is output to the output side of the output matching circuit while changing the impedance.

  Therefore, the high frequency signal output from the output matching circuit 103 is a high frequency signal with the harmonics attenuated.

  The high-frequency signal including the other branched harmonic is input to the input side of the harmonic attenuation circuit 105 via the capacitor 106, and becomes a high-frequency signal in which the harmonic is attenuated by the harmonic attenuation circuit 105. .

  As described above, the detection circuit 102 detects a high-frequency signal in which a harmonic equivalent to the high-frequency signal output from the output matching circuit 103 is attenuated, so that a detection voltage error due to the harmonic is reduced. The harmonics referred to in the present invention are high-order frequency components that are integer multiples of the fundamental wave.

JP 2010-41233 A

  However, when the harmonic attenuation circuit configured on the semiconductor integrated circuit substrate is reduced for miniaturization, a high-frequency signal including harmonics is input to the detection circuit, and the detection voltage becomes a voltage including harmonics. Therefore, since the high-frequency signal output from the output matching circuit is a high-frequency signal that does not include harmonics, an error occurs in the detection voltage. Furthermore, it is necessary to configure the harmonic attenuation circuit on the semiconductor integrated circuit substrate, and it is difficult to reduce the size.

  The present invention has been made in view of the above problems, and an object of the present invention is to provide a high-frequency amplifier including a detection circuit that can reduce the detection voltage error and reduce the size by harmonic attenuation.

  In order to achieve the above object, a high-frequency amplifier according to the present invention includes a power amplifying unit, a first connection pad provided on the output side of the power amplifying unit, a detection circuit that detects an output signal of the power amplifying unit, and a detection circuit A semiconductor integrated circuit board having a third connection pad provided via a capacitor on the input side, and a semiconductor mounting board having a second connection pad provided on the input side of the output matching circuit and the output matching circuit; Are electrically connected by the first connection member between the first connection pad of the semiconductor integrated circuit substrate and the second connection pad of the semiconductor integrated circuit substrate, and the second connection member of the semiconductor integrated circuit substrate. The first feature is that the third connection pad and the second connection pad of the semiconductor mounting substrate are electrically connected.

  According to the high frequency amplifier having the above characteristics, it is possible to input a signal obtained by attenuating the harmonic signal to the detection circuit without forming a harmonic attenuation circuit that reflects the harmonic on the semiconductor integrated circuit substrate, and to match the matching circuit. By detecting a signal equivalent to the high-frequency signal output from, an error in the detection voltage can be reduced.

  Further, since a harmonic attenuation circuit that reflects harmonics is not required on the semiconductor integrated circuit substrate, the size of the semiconductor integrated circuit substrate can be reduced.

  Furthermore, the high-frequency amplifier according to the present invention has a second feature that the first and second connecting members are bonding wires.

  According to the high frequency amplifier having the above characteristics, when the bonding wire is connected so that the inductance component of the bonding wire and the capacitance component of the capacitor between the third connection pad and the detection circuit resonate at the fundamental frequency. Due to the resonance effect, only the fundamental wave signal can pass and the harmonics can be reflected.

  The third feature of the high-frequency amplifier according to the present invention is that the first and second connecting members are flip-chip mounting in which bumps are used.

  According to the high-frequency amplifier having the above characteristics, the mounting area can be reduced by flip-chip mounting than when a bonding wire is used for the connection member.

  The high-frequency amplifier according to the present invention further includes a series resonant circuit that is short-circuited at a frequency of the second harmonic in the output matching circuit provided on the semiconductor mounting substrate, and one side of the series resonant circuit is connected to the second connection pad. In addition, it is confirmed that the other side of the series resonant circuit is connected to GND, and the phase of the second harmonic on the output matching circuit side in the second connection pad provided on the semiconductor mounting substrate is -30 to +60 degrees. 4 features.

  According to the high frequency amplifier having the above characteristics, by providing a series resonance circuit in the output matching circuit and setting the phase of the second harmonic to -30 to +60 degrees, the second harmonic is higher than the output power of the fundamental frequency. When the output power of −5 dBc is generated, the error of the detection voltage due to the influence of the second harmonic can be set to 0.2 V or less.

  Furthermore, in the high frequency amplifier according to the present invention, a low pass filter is connected in the output matching circuit, and the second harmonic phase on the output matching circuit side in the second connection pad provided on the semiconductor mounting substrate is -20 to +30 degrees. It is a fifth feature.

  According to the high frequency amplifier having the above characteristics, a low-pass filter is formed in the output matching circuit to attenuate higher harmonics of the second harmonic and higher, and the phase of the second harmonic in the connection pad is set to -20 to +30 degrees. Even if the output power of the second harmonic wave is -5 dBc with respect to the output power of the frequency, the error of the detection voltage due to the influence of the second harmonic can be suppressed to within ± 0.2V.

  ADVANTAGE OF THE INVENTION According to this invention, the high frequency amplifier provided with the detection circuit which can reduce a detection voltage error and can be reduced in size by attenuation | damping of a harmonic can be provided.

1 is a block diagram of a high-frequency amplifier according to a first embodiment. It is a schematic diagram of the high frequency amplifier by 2nd Embodiment. It is a schematic diagram of the high frequency amplifier by 3rd Embodiment. It is a block diagram of the high frequency amplifier by 4th Embodiment. It is a characteristic view which shows the passage characteristic of the high frequency amplifier by 4th Embodiment. It is a characteristic view which shows a detection voltage when changing the phase of the 2nd harmonic by 4th Embodiment. It is a block diagram of the high frequency amplifier by 5th Embodiment. It is a characteristic view which shows the passage characteristic of the high frequency amplifier by 5th Embodiment. It is a characteristic view which shows a detection voltage when changing the phase of the 2nd harmonic by 5th Embodiment. It is a block diagram which shows the conventional circuit structure. It is an example of the circuit diagram of the detection circuit provided by this invention.

  Preferred embodiments for carrying out the present invention will be described in detail with reference to the drawings. The present invention is not limited by the contents described in the following embodiments. The constituent elements described below include those that can be easily assumed by those skilled in the art, those that are substantially the same, and those that are equivalent. Furthermore, the constituent elements described below can be appropriately combined. In addition, various omissions, substitutions, or changes of components can be made without departing from the scope of the present invention.

(First embodiment)
FIG. 1 is a block diagram showing the overall configuration of the high-frequency amplifier according to the first embodiment. A power amplifier 1, a first connection pad 9, a third connection pad 11, a capacitor 6, and a detection circuit 2 are configured on a semiconductor integrated circuit substrate 7, and an output matching circuit 3 is formed on the semiconductor mounting substrate 8. A second connection pad 10 is configured.

  The first connection pad 9 is connected to the output side of the power amplifier 1, and the first connection pad 9 is connected to the second connection pad 10 via the first connection member 4. The second connection pad 10 is connected to the input side of the output matching circuit 3, and the second connection pad 10 is also connected to the third connection pad 11 via the second connection member 5. The third connection pad 11 is connected to the input side of the detection circuit 2 via the capacitor 6.

  In the present embodiment, the power amplifying unit 1 outputs a high-frequency signal including harmonics, and the high-frequency signal is input to the output matching circuit 3 and the second connection member 5 through the first connection member 4. The output matching circuit 3 is composed of a circuit that reflects harmonics and a matching circuit that matches fundamental waves. When the impedance of the harmonic frequency viewed from the connection pad 10 on the output matching circuit 3 side is short-circuited or low impedance, Harmonics are reflected to the power amplifier 1 without being transmitted to the second connecting member 5.

  Here, the case where a harmonic is limited to a 2nd harmonic is demonstrated. The impedance at the second harmonic frequency when the output matching circuit 3 is viewed from the second connection pad 10 is Zm, and is twice that when the detection circuit 2 side is viewed from the second connection pad 10 through the second connection member 5. The impedance at the wave frequency is Zd.

The combined impedance of the second harmonic frequency of the second connection pad 10 from the output side of the first connection member 4 is expressed by Equation (1).
(Zm * Zd) / (Zm + Zd) (1)

  When Zm is sufficiently smaller than Zd, the combined impedance is approximated to Zm.

  Therefore, the second harmonic signal generated in the power amplifying unit 1 is reflected by the impedance of Zm at the second connection pad 10 and is not transmitted to the detection circuit 2 but reflected by the power amplifying unit 1. .

  Here, the harmonic is limited to the second harmonic, but is not limited to the second harmonic, and the present invention can be applied to the n-th harmonic and gives the same result. Therefore, without configuring a harmonic attenuation circuit that reflects harmonics on the semiconductor integrated circuit substrate, a signal obtained by attenuating the harmonic signal can be input to the detection circuit, and the high-frequency signal output from the matching circuit and By detecting an equivalent signal, an error in the detection voltage can be reduced.

  Although the power amplifying unit 1 is a single high-frequency amplifier, a multi-stage high-frequency amplifier may be used in the present invention. The first connecting member 4 and the second connecting member 5 are for electrically connecting the semiconductor integrated circuit substrate 7 constituting the high-frequency amplifier and the output matching circuit 3, and may be, for example, a bonding wire. The circuit for attenuating harmonics configured in the output matching circuit 3 may be any circuit that can attenuate harmonics, and may be, for example, a series resonance circuit.

  In the embodiment of the present invention, the semiconductor mounting substrate 8 is a substrate composed of at least one conductor layer on which the semiconductor integrated circuit substrate 7 can be mounted. As a material, for example, FR-4, LTCC, alumina or the like may be used.

(Second Embodiment)
FIG. 2 is a schematic diagram of a high-frequency amplifier according to a second embodiment of the present invention. The difference from the high-frequency amplifier according to the first embodiment shown in FIG. 1 is that a first bonding wire 12 and a second bonding wire 13 are used as connection members. The power amplifying unit 1 configured on the semiconductor integrated circuit board 7 that amplifies the input high frequency signal and the output matching circuit 3 configured on the semiconductor mounting board 8 are connected to the semiconductor integrated circuit board 7 by the first bonding wires 12. The first connection pad 9 configured in the above and the second connection pad 10 configured on the semiconductor mounting substrate 8 are connected to each other and configured on the semiconductor integrated circuit substrate 7 connected through the capacitor 6. The output matching circuit 3 configured on the detection circuit 2 and the semiconductor mounting substrate 8 is configured on the second connection pads 10 and the semiconductor integrated circuit substrate 7 configured on the semiconductor mounting substrate 8 by the second bonding wires 13. The third connection pad 11 is connected.

  In this embodiment, when the connection is made with a bonding wire, the inductance component of the bonding wire and the capacitance component due to the capacitor between the third connection pad 11 and the detection circuit 2 are adjusted so as to resonate at the fundamental frequency. It becomes a circuit, and only the fundamental frequency passes through the detection circuit 2 and it becomes possible to reflect harmonics.

  In addition, since the inductance component can be adjusted by changing the length of the bonding wire, matching can be adjusted in the case of variations in the semiconductor integrated circuit substrate during manufacture.

(Third embodiment)
FIG. 3 is a schematic diagram of a high-frequency amplifier according to a third embodiment of the present invention. The difference from the high-frequency amplifier according to the first embodiment shown in FIG. 1 is that bumps are used as connecting members, and the first bump 14 and the second bump 15 are used for flip chip mounting. Is a point. The power amplifying unit 1 configured on the semiconductor integrated circuit substrate 7 that amplifies the input high-frequency signal and the output matching circuit 3 configured on the semiconductor mounting substrate 8 are connected by the first bump 14 and are connected via the capacitor 6. The detection circuit 2 and the output matching circuit 3 configured on the semiconductor integrated circuit substrate 7 connected to each other are connected by the second bump 15. Since it is flip chip mounting, the first connection pad 9, the third connection pad 11 provided on the semiconductor integrated circuit substrate 7, and the second connection pad 10 configured on the semiconductor mounting substrate 8 face each other, The first connection pad 9 and the second connection pad 10 are electrically connected by the first bump 14, and the third connection pad 11 and the second connection pad 10 are electrically connected by the second bump 15. To do.

  In this embodiment, since the pads are overlapped when connected by the bump electrodes, the distance between the pads as in the case of connecting by the bonding wires is not required, and the mounting area can be reduced.

(Fourth embodiment)
FIG. 4 is a block diagram of a high frequency amplifier according to a fourth embodiment of the present invention. The difference from the high-frequency amplifier according to the first embodiment shown in FIG. 1 is that the output matching circuit 3 configured on the semiconductor mounting substrate 8 is short-circuited at a frequency of the second harmonic, and the matching circuit 16 and the series resonance circuit 17. In this configuration, one side of the series resonant circuit 17 is connected to the input side of the matching circuit 16, and the other side of the series resonant circuit is connected to GND. As a result, the error in the detection voltage can be further reduced.

  Hereinafter, specific characteristic results of the present invention will be described with reference to a characteristic diagram shown in FIG. FIG. 5 is a characteristic diagram showing pass characteristics of the high-frequency amplifier according to FIG. 4 according to the present invention. As an example, the case of WiMAX is assumed. The frequency bands in WiMAX are 2.3 to 2.4 GHz and 2.496 to 2.69 GHz. Therefore, a case where the fundamental wave is 2.5 GHz and the second harmonic wave is 5 GHz will be described. The passing characteristic from the output of the power amplifying unit 1 through the connecting member 4 to the output of the output matching circuit 3 is defined as an output matching circuit side attenuation 201, and the connecting member 4 passes from the output of the power amplifying unit 1 through the connecting member 4. The pass characteristic from 5 to the input of the capacitor 6 and the detection circuit 2 is defined as a detection circuit side attenuation 202. The amount of attenuation when the series resonance circuit 17 that is short-circuited at the frequency of the second harmonic is not provided is indicated by a broken line, and the amount of attenuation when the series resonance circuit 17 that is short-circuited at the frequency of the second harmonic is provided. It is shown with a solid line.

  Further, by comparing the solid line and the broken line of the detection circuit side attenuation amount 202 in FIG. 4, although there is no resonance circuit that reflects the harmonic signal on the semiconductor integrated circuit substrate 7, the harmonic of 5 GHz which is a second harmonic is obtained. It can be seen that the wave signal is attenuated. As an example, the case of WiMAX was examined, but it is not specialized for WiMAX. In the case of W-CDMA (Wideband Code Division Multiple Access), which is another communication standard, the frequency band is 1.920 to 1.980 GHz, and the fundamental wave is 1.95 GHz and harmonics. Even when the second harmonic is set to 3.9 GHz, the same result is obtained when the value of the horizontal axis in FIG. 5 is replaced from 2.5 GHz to 1.95 GHz and from 5 GHz to 3.9 GHz.

  Further, FIG. 6 is a characteristic diagram showing the relationship between the power of the second harmonic wave and the detection voltage according to FIG. 4 according to the present invention. The high frequency signal output from the power amplifying unit 1 has a fundamental wave of 2.5 GHz, a second harmonic wave of 5 GHz, and a fundamental wave power of 23 dBm. The horizontal axis represents the double wave power output from the power amplifier 1. The vertical axis indicates the difference between the detection voltage and the reference voltage when the fundamental wave and the second harmonic wave are output, with the detection voltage when only the fundamental wave is output from the power amplifier 1 with the power of 23 dBm. (ΔVdet [V]). In other words, the vertical axis represents a detection voltage due to the influence of only the second harmonic.

  Here, although the power of the fundamental wave is 23 dBm, the WiMAX communication standard defines the maximum transmission output of the transmitter as 23 dBm, the antenna gain as a maximum of 2 dBi, and the maximum final output from the antenna as 25 dBm. From this, the transmission power from the power amplifying unit 1 to the antenna is considered, and the power of the fundamental wave in the power amplifying unit 1 is set to 23 dBm.

  On the other hand, in the W-CDMA communication standard, the maximum transmission output of the transmitter in Power Class 3 is 24 dBm, and the allowable range is defined as +1 dB to -3 dB. In the case of W-CDMA, the same result can be obtained by calculating the power of the fundamental wave in the power amplifier 1 as 22 dBm in consideration of the transmission loss from the power amplifier 1 to the antenna.

  Here, when the second harmonic of the impedance characteristic on the second connection pad 10 side from the first connecting member 4 is a short circuit, the phase of the second harmonic is 0 degree on the Smith chart (not shown), FIG. 6 shows the result of calculating the detection voltage value at the second harmonic phase that is open when the second harmonic phase is 90 degrees or −90 degrees.

  Therefore, it can be seen from the characteristic diagram of FIG. 6 that an error occurs in the detection voltage when the phase of the second harmonic wave when the second connection pad 10 is viewed from the first connection member 4 deviates from 0 degrees. It can also be seen that the detection voltage error increases as the power of the second harmonic signal increases.

  In general, when an OFDM signal is amplified, the power of the second harmonic wave is generated about -5 dBc with respect to the fundamental wave. That is, when the fundamental wave power is 23 dBm, 18 dBm is output as the double wave power.

  Further, when the output power of the power amplifying unit 1 is set to a range of 23 dBm ± 2 dB, the detection voltage range of a commonly used voltage doubler detection circuit is within ± 0.2V. Here, the allowable range of output power is set to ± 2 dB. However, the WiMAX communication standard defines the maximum transmission output of the transmitter as 23 dBm, the antenna gain as a maximum of 2 dBi, and the maximum final output from the antenna as 25 dBm. Since the maximum antenna gain is 2 dBi, the allowable upper limit of the transmission output of the transmitter is set to +2 dB. When the transmission output of the transmitter is reduced, the communication distance is shortened. Therefore, the allowable lower limit of the transmission output of the transmitter is required to be −2 dB.

  Furthermore, in the W-CDMA communication standard, the maximum transmission output of the transmitter in Power Class 3 is 24 dBm, and the allowable range is defined as +1 dB to -3 dB. Therefore, when the allowable range of the transmission output is ± 2 dB, the range of the detection voltage is similarly within ± 0.2V.

  According to the present embodiment, when the second harmonic output power is -5 dBc relative to the output power of the fundamental frequency by setting the phase of the second harmonic to -30 to +60 degrees, the phase is 20 degrees. As shown in the detection voltage at the time of, the detection voltage at the phase of 60 degrees, and the detection voltage at the phase of -30 degrees, the error of the detection voltage due to the influence of the double wave can be 0.2 V or less.

(Fifth embodiment)
FIG. 7 is a block diagram of a high-frequency amplifier according to a fifth embodiment of the present invention. The difference from the high-frequency amplifier according to the first embodiment shown in FIG. 1 is that the output matching circuit 3 configured on the semiconductor mounting substrate 8 includes a low-pass filter 18 and a matching circuit 16. The low-pass filter 18 preferably passes the fundamental wave, has a low impedance at a frequency of the second harmonic, and has a function of attenuating harmonics. As a result, the error in the detection voltage can be further reduced.

  Hereinafter, specific characteristic results of the present invention will be described with reference to a characteristic diagram shown in FIG. FIG. 8 is a characteristic diagram showing pass characteristics of the high-frequency amplifier according to FIG. 7 according to the present invention. As an example, a case where the fundamental wave is 2.5 GHz and the second harmonic wave is 5 GHz will be described. The passing characteristic from the output of the power amplifying unit 1 through the connecting member 4 to the output of the output matching circuit 3 is defined as the output matching circuit side attenuation 203, and the connecting member is connected from the output of the power amplifying unit 1 through the connecting member 4. The pass characteristic from 5 to the input of the capacitor 6 and the detection circuit 2 is defined as the attenuation amount 204 on the detection circuit side. The amount of attenuation when the low-pass filter 18 having low impedance at the second harmonic frequency is not provided is indicated by a broken line, and the amount of attenuation when the low-pass filter 18 having low impedance at the second harmonic frequency is provided. It is shown with a solid line.

  Further, by comparing the solid line and the broken line of the detection circuit-side attenuation amount 204, the low-pass filter 18 is provided by providing the low-pass filter 18 even though there is no resonance circuit that reflects the harmonic signal on the semiconductor integrated circuit substrate 7 in FIG. It can be seen that the harmonic signal higher than the harmonic wave is attenuated.

  Further, FIG. 9 is a characteristic diagram showing the relationship between the power of the second harmonic wave and the detection voltage according to FIG. 7 according to the present invention. The high frequency signal output from the power amplifying unit 1 has a fundamental wave of 2.5 GHz, a second harmonic wave of 5 GHz, and a fundamental wave power of 23 dBm. The horizontal axis represents the double wave power output from the power amplifier 1. The vertical axis indicates the difference between the detection voltage and the reference voltage when the fundamental wave and the second harmonic wave are output, with the detection voltage when only the fundamental wave is output from the power amplifier 1 with the power of 23 dBm. (ΔVdet [V]). In other words, the vertical axis represents a detection voltage due to the influence of only the second harmonic.

  Here, when the second harmonic of the impedance characteristic on the second connection pad 10 side from the first connection member 4 is a short circuit, the phase of the second harmonic is 0 degree on the Smith chart (not shown), FIG. 9 shows the result of calculating the detection voltage value in the second harmonic phase that is open when the second harmonic phase is 90 degrees or −90 degrees.

  Therefore, it can be seen from the characteristic diagram of FIG. 9 that an error occurs in the detected voltage when the phase of the second harmonic wave when the second connection pad 10 is viewed from the first connection member 4 is shifted from 0 degrees. It can also be seen that the detection voltage error increases as the power of the second harmonic signal increases.

  In general, when an OFDM signal is amplified, the power of the second harmonic wave is generated about -5 dBc with respect to the fundamental wave. That is, when the fundamental wave power is 23 dBm, 18 dBm is output as the double wave power.

  When the output power of the amplifier is in the range of 23 dBm ± 2 dB, the detection voltage range of the commonly used voltage doubler detection circuit is within ± 0.2V. According to the present embodiment, the low-pass filter 18 is formed in the output matching circuit 3 to attenuate the harmonics higher than the second harmonic and the phase of the second harmonic in the connection pad is set to -20 to +30 degrees to thereby increase the fundamental frequency. When the output power of the second harmonic is -5 dBc with respect to the output power of, the detection voltage when the phase is -20 degrees, the detection voltage when the phase is 0 degrees, and the detection voltage when the phase is 30 degrees As shown in FIG. 5, the error of the detection voltage due to the influence of the second harmonic can be within ± 0.2V.

  FIG. 11 is an example of a circuit diagram of a detection circuit provided in the present invention according to the present invention. A resistor 112 is provided on the output side of the power supply terminal 111, a resistor 113 is provided on the input side of the second diode 110, connected to the input side of the first diode 109, and a resistor 114 is provided on the output side of the first diode 109. And a capacitor 115 are connected in parallel.

  As described above, the high-frequency amplifier according to the present invention can be used for a device (for example, a mobile phone terminal) using an amplifying element for transmitting and receiving a high-frequency signal, and particularly when detecting at a high output as in the OFDM method. It is suitable for cases that are susceptible to harmonics.

DESCRIPTION OF SYMBOLS 1,101 Power amplification part 2,102 Detection circuit 3,103 Output matching circuit 4 1st connection member 5 2nd connection member 6,106,115 Capacitor 7,107 Semiconductor integrated circuit board 8,108 Semiconductor mounting board 9 1st One connection pad 10 Second connection pad 11 Third connection pad 12 First bonding wire 13 Second bonding wire 14 First bump 15 Second bump 16 Matching circuit 17 Series resonance circuit 18 Low-pass filter 104 Connection Member 105 Harmonic attenuation circuit 109 First diode 110 Second diode 111 Power supply terminal 112, 113, 114 Resistance 201, 203 Output matching circuit side attenuation 202, 204 Detection circuit side attenuation

Claims (4)

A power amplifying unit; a first connection pad provided on the output side of the power amplifying unit; a detection circuit for detecting an output signal of the power amplifying unit; and a third provided on the input side of the detection circuit via a capacitor. A semiconductor integrated circuit board having a connection pad of
An output matching circuit and a semiconductor mounting substrate having a second connection pad provided on the input side of the output matching circuit;
The first connection pad and the second connection pad are electrically connected by the first connection member,
The third connection pad and the second connection pad are electrically connected by a second connection member,
A high-frequency amplifier, wherein an inductor component of the first connection member and the second connection member and a capacitance component due to the capacitor form an LC series resonance circuit that resonates at a fundamental frequency of the output signal.   2. The high frequency amplifier according to claim 1, wherein the first and second connecting members are bonding wires. The output matching circuit provided on the semiconductor mounting substrate includes a series resonance circuit that is short-circuited at a frequency of a second harmonic, and one side of the series resonance circuit is connected to the second connection pad,
The other of the series resonant circuits is connected to GND, and the phase of the second harmonic on the output matching circuit side in the second connection pad provided on the semiconductor mounting substrate is -30 to +60 degrees. A high-frequency amplifier according to claim 1 or 2 . A low pass filter is connected in the output matching circuit, and the phase of the second harmonic wave on the output matching circuit side in the second connection pad provided on the semiconductor mounting substrate is -20 to +30 degrees. The high frequency amplifier according to claim 1 or 2 .

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