JP6272285B2 - Semiconductor device control method - Google Patents

Description

  The present invention relates to a method for controlling a semiconductor device.

  In general, there is a semiconductor device for monitoring and controlling a plurality of batteries connected in series. As such a semiconductor device, for example, a battery monitoring IC (Integral Circuit) for monitoring and controlling a battery mounted on a vehicle or the like is known. For example, Patent Document 1 describes a power storage device that controls a plurality of high-energy capacitors connected in series used as a storage battery for an electric vehicle or a hybrid electric vehicle, and a control method therefor.

JP 2003-70179 A

  An example of a schematic configuration of a conventional battery monitoring IC is shown in FIG. A conventional battery monitoring IC 100 for monitoring and controlling the battery 114 shown in FIG. 9 includes a cell selection SW 118 and an analog level shifter 122.

  The battery 114 includes five battery cells Vc1 to Vc5 connected in series, and the negative electrode of the battery cell Vc1 is connected to GND (ground). Further, the positive electrode of the battery cell Vc5 is connected to the power supply VCC of the battery monitoring IC 100. Both-end voltages V0 to V5 of the battery 114 are connected to inputs of the cell selection SW 118 of the battery monitoring IC 100 via respective LPFs (low pass filters) 116. The output of the cell selection SW 118 is connected to the analog level shifter 122. The analog level shifter 122 includes detection resistors R1 to R4, an amplifier 136, and dummy switches SWA and SWB. The dummy switches SWA and SWB are dummy switching elements having the same on-resistance as the switching elements SW0 to SW5 included in the cell selection SW 118, and are always on. In addition, dummy resistors RD1 and RD2 are connected to the analog level shifter 122 of the present embodiment. The dummy resistors RD1 and RD2 are dummy resistor elements for canceling errors generated in the resistors Rf01 to Rf51 of the LPF 116, and are resistor elements having the same resistance value as the resistors Rf0 to Rf5 of the LPF 116.

  Measurement of the battery voltage of the battery 114 by the conventional battery monitoring IC 100 will be described with reference to FIGS. When measuring the voltage value of the battery cell Vc5, the switching elements SW5 and SW4_1 of the cell selection SW118 are turned on, and the other switching elements are turned off. When the resistance values of the detection resistors R1 to R4 are the same (R1 = R2 = R3 = R4) and the on-resistances of the switching elements SW5, SW4_1, SWA, and SWB are RSW, the voltage Vc5 = V5-V4 of the battery cell Vc5 is an analog level shifter The voltage is converted by 122, Vout = Vc5, and converted to a GND reference voltage.

  Similarly, when measuring the voltage of the battery cell Vc4, the switching elements SW4_2 and SW3_1 of the cell selection SW118 are turned on, the other switching elements are turned off, and voltage conversion is performed by the analog level shifter 122, so that Vout = Vc4. When measuring the voltage of the battery cell Vc3, the switching elements SW3_2 and SW2_1 of the cell selection SW118 are turned on, the other switching elements are turned off, and the voltage is converted by the analog level shifter 122, so that Vout = Vc3. . When measuring the voltage of the battery cell Vc2, the switching elements SW2_2 and SW1_1 of the cell selection SW118 are turned on, the other switching elements are turned off, and voltage conversion is performed by the analog level shifter 122, so that Vout = Vc2. When measuring the voltage of the battery cell Vc1, the switching elements SW1_2 and SW0 of the cell selection SW118 are turned on, the other switching elements are turned off, and the voltage is converted by the analog level shifter 122, so that Vout = Vc1.

  Since the switching elements SW0 to SW5 of the cell selection SW118 are composed of MOS transistors, parasitic capacitances C0 to C5 are generated between the switching elements SW0 to SW5 to GND. Therefore, as shown in FIG. 11, the charge of the capacitor Cf5 of the LPF 116 moves to the parasitic capacitances C41 and C5 immediately after the switching elements SW5 and SW4_1 are turned on when measuring the voltage value of the battery cell Vc5. Accordingly, the voltages V41, V51, and Vout drop. When the parasitic capacitance of the cell selection SW 118 is large, the amount of moving charges increases, so that the voltage drop increases.

  Further, immediately after the switching elements SW5 and SW4_1 are turned on when the voltage value of the battery cell Vc5 is measured, the currents flowing through the detection resistors R1 to R4 of the analog level shifter 122 are the resistors Rf0 to Rf5 of the LPF 116 and the capacitors Cf1 to Cf5. Is supplied from the battery cells Vc1 to Vc5 through the battery (see FIG. 10, thick line), and the voltage further drops. In particular, when the resistance values of the resistors Rf0 to Rf5 of the LPF 116 are large, the voltage drop is large.

  Since the voltage that has dropped in this way is restored by the time constant of the LPF 116, it takes time until the output voltage Vout is stabilized. The larger the time constant of the LPF 116, the longer it takes to stabilize.

  As described above, in the measurement of the battery voltage by the conventional battery monitoring IC 100, it takes time until the output of the analog level shifter 122 is stabilized.

  The present invention has been proposed to solve the above-described problems, and an object of the present invention is to provide a method for controlling a semiconductor device capable of shortening the battery voltage measurement time.

In order to achieve the above object, a method for controlling a semiconductor device according to the present invention includes: inputting a potential at one end and a potential at the other end of each of a plurality of battery cells connected in series; A semiconductor device control method for detecting a voltage of the selected battery cell based on a difference between a potential at one end and a potential at the other end, wherein the first method is connected to one end of each of the plurality of battery cells. A battery cell for detecting a voltage is selected by outputting a potential of one end of the battery cell selected by the cell selection switch to the first buffer amplifier, and a battery cell connected to the other end of each of the plurality of battery cells is selected. the other end of the potential of the battery cell selected by the second cell selection switches to select the battery cell for detecting the by Ri before SL voltage to be output to the second buffer amplifier, connected to the series with a plurality of batteries Supplied from the cell When the power supply voltage is lower than the voltage value for operating the first transistor included in the first buffer amplifier in the saturation region, the power supply voltage is used, and the first transistor operates in the saturation region. A voltage value for boosting is boosted by a boosting means and supplied to the first buffer amplifier, and a power supply voltage supplied from the plurality of battery cells connected in series is provided in the second buffer amplifier. When the voltage is lower than the voltage value for operating the transistor in the saturation region, the power supply voltage is boosted by the boosting means to the voltage value for operating the second transistor in the saturation region. The first voltage supplied to the non-inverting terminal via the first buffer amplifier and the first voltage inputted to the inverting terminal via the second buffer amplifier. The method comprising outputting from the analog level shifter to the output terminal of the difference between the voltage of the voltage of the selected battery cell, among the plurality of battery cells, battery cells potential is connected to the ground of the other end selected The difference between the first voltage input to the non-inverting terminal via the first buffer amplifier and the second voltage input to the inverting terminal via the second buffer amplifier. The voltage at the other end is output from the analog level shifter to the output terminal as the voltage of the battery cell connected to the ground, and the voltage detected as that of the selected battery cell is output from the analog level shifter by the switching element. switch to the potential of the one end from the voltage of the battery cell potential of the other end of which is connected to ground, directly without the second buffer amplifier, said It said one end of the battery cell potential end is connected to ground connects to the output terminal.

  According to the present invention, there is an effect that the measurement time of the battery voltage can be shortened.

1 is a circuit diagram illustrating an example of a schematic configuration of a semiconductor device according to a first embodiment. It is a circuit diagram which shows a specific example of schematic structure of a cell selection switch. It is a circuit diagram which shows a specific example of schematic structure of a buffer amplifier. It is explanatory drawing for demonstrating the current pathway in the case of measuring the voltage of the battery cell Vc5 with the semiconductor device which concerns on 1st Embodiment. It is a wave form diagram which shows an example of the voltage measurement waveform in the case of measuring the voltage of the battery cell Vc5 with the semiconductor device which concerns on 1st Embodiment. It is a circuit diagram which shows an example of schematic structure of the semiconductor device which concerns on 2nd Embodiment. It is a circuit diagram which shows an example of schematic structure of the semiconductor device which concerns on 3rd Embodiment. It is a circuit diagram which shows an example of schematic structure of the semiconductor device which concerns on 4th Embodiment. It is a circuit diagram which shows an example of schematic structure of the conventional semiconductor device. It is explanatory drawing for demonstrating the current pathway in the case of measuring the voltage of the battery cell Vc5 with the conventional semiconductor device. It is a wave form diagram which shows an example of the voltage measurement waveform in the case of measuring the voltage of the battery cell Vc5 with the conventional semiconductor device.

  [First Embodiment]

  The battery monitoring semiconductor device according to the first embodiment of the present invention will be described below in detail with reference to the drawings.

  FIG. 1 shows a circuit diagram of an example of a schematic configuration of a semiconductor device (battery monitoring IC) of the present embodiment. The battery monitoring IC 10 of this embodiment includes a cell selection SW 18, a buffer amplifier 20, and an analog level shifter 22. The buffer amplifier 20 includes a buffer amplifier 30 and a buffer amplifier 32, and the analog level shifter 22 forms a differential amplifier circuit by the detection resistors R1, R2, R3, R4 and the amplifier 36.

  The battery 14 includes five battery cells Vc1 to Vc5 connected in series, and the negative electrode of the battery cell Vc1 is connected to GND. Further, the positive electrode of the battery cell Vc5 is connected to the power source of the battery monitoring IC 10. The switching elements of the cell selection SW 18 of the battery monitoring IC 10 are connected to both ends of each of the battery cells Vc1 to Vc5 through an LPF 16 including capacitors Cf1 to Cf5 and resistors Rf0 to Rf5 so that the voltages V0 to V5 are input to both ends. It is connected to SW0 to SW5.

  The cell selection SW18 includes switching elements SW0 to SW5 for selecting the battery cells Vc1 to Vc5. In the present embodiment, the switching elements SW0 to SW5 all have the same structure, and are constituted by high breakdown voltage MOS transistors. FIG. 2 shows a circuit diagram of a specific example of the switching elements SW0 to SW5 of the present embodiment. The switching elements SW0 to SW5 of the present embodiment are configured to include an NMOS transistor 70, a PMOS transistor 72, and a logic negation circuit 74. When the control signal input to the logic negation circuit 74 is at a high level, the NMOS transistor 70 and the PMOS transistor 72 are turned on, and a voltage is output from the LPF 16 to the buffer amplifier 20. On the other hand, when the control signal input to the logic negation circuit 74 is at a low level, the NMOS transistor 70 and the PMOS transistor 72 are turned off, and no voltage is output from the LPF 16 to the buffer amplifier 20. Note that the switching elements SW0 to SW5 are not limited to this as long as they are configured with high-breakdown-voltage transistors, and may have other configurations.

  The output of the cell selection SW 18 is connected to the non-inverting terminal of the buffer amplifier 20. In the present embodiment, the switching elements SW0, SW1_1, SW2_1, SW3_1, and SW4_1 of the cell selection SW18 are connected to the non-inverting input terminal of the buffer amplifier 32, and the switching elements SW1_2, SW2_2, SW3_2, SW4_2, and SW5 are the buffer amplifiers. It is connected to 30 non-inverting input terminals. The outputs are connected (negative feedback) to the inverting terminals of the buffer amplifiers 30 and 32, respectively.

  In the present embodiment, the buffer amplifiers 30 and 32 have the same structure and are composed of high breakdown voltage MOS transistors. FIG. 3 shows a circuit diagram of a specific example of the buffer amplifiers 30 and 32 of the present embodiment. The buffer amplifiers 30 and 32 of this embodiment include PMOS transistors 80, 82, 84, and 86, a capacitor 88, and NMOS transistors 90, 92, and 94. In the present embodiment, voltages Vx1 and Vy1 (Vx = Vx1, Vy = Vy1) having the same voltage value as the voltages Vx and Vy input from the non-inverting terminal are output from the output terminal. The buffer amplifiers 30 and 32 are not limited to this as long as they are configured by high voltage transistors, and may have other configurations.

  The output of the buffer amplifier 20 is connected to the analog level shifter 22. In the present embodiment, the output (Vx1) of the buffer amplifier 30 is connected to the non-inverting terminal of the amplifier 36 via the detection resistor R1, and the output (Vy1) of the buffer amplifier 32 is connected to the inverting terminal of the amplifier 36. It is connected.

  The analog level shifter 22 outputs the difference between the voltage values of the both end voltages of the battery cell selected by the cell selection SW 18 to the outside of the battery monitoring IC 10 as Vout. As a specific example of the analog level shifter 22 of the present embodiment, an amplifier 36 having the same structure (see FIG. 3) as the buffer amplifiers 30 and 32, and detection resistors R1 to R4 (R1 = R2) having the same resistance value = R3 = R4).

  Measurement of the battery voltage of the battery cells Vc1 to Vc5 by the battery monitoring IC 10 of the present embodiment will be described with reference to FIGS. When measuring the voltage value (V5−V4 = Vc5) of the battery cell Vc5, the switching elements SW5 and SW4_1 of the cell selection SW18 are turned on, and the other switching elements are turned off. Since the input impedances of the buffer amplifiers 30 and 32 are high, there is no voltage drop due to the resistors Rf4 and Rf5 and the cell selection SW18 (switching elements SW4_1 and SW5) due to current, so that the voltage Vx = V5 and the voltage Vy = V4. Therefore, the output Vout of the analog level shifter 22 becomes V5−V4 = Vc5, and is converted to a ground reference voltage and output to the outside.

  Similarly, when measuring the voltage of the battery cell Vc4, the switching elements SW4_2 and SW3_1 of the cell selection SW18 are turned on, the other switching elements are turned off, and Vout = Vc4 is output from the analog level shifter 22. The When measuring the voltage of the battery cell Vc3, the switching elements SW3_2 and SW2_1 of the cell selection SW18 are turned on, the other switching elements are turned off, and Vout = Vc3 is output from the analog level shifter 22. When the voltage of the battery cell Vc2 is measured, the switching elements SW2_2 and SW1_1 of the cell selection SW18 are turned on, the other switching elements are turned off, and Vout = Vc2 is output from the analog level shifter 22. When the voltage of the battery cell Vc1 is measured, the switching elements SW1_2 and SW0 of the cell selection SW18 are turned on, the other switching elements are turned off, and Vout = Vc1 is output from the analog level shifter 22.

  By measuring the voltage value of the output voltage Vout output from the battery monitoring IC 10 as described above, the battery voltages of the battery cells Vc1 to Vc5 are measured. For example, it is used for measurement of a battery (such as an electric vehicle or a storage battery for a hybrid electric vehicle) mounted on a car or the like.

  In this embodiment, since the buffer amplifiers 30 and 32 having high input impedance are connected to the output of the cell selection SW 18, when the battery voltage of the battery cell Vc5 is measured, a current flows as shown by a thick line in FIG. . Thus, in the present embodiment, as can be seen from comparison with FIG. 10 showing the flow of current when the battery voltage is measured by the conventional battery monitoring IC 100, the resistors Rf0 to Rf3 and the capacitors of the LPF 16 from the battery cells Vc1 to Vc4. Suppresses the flow of current through Cf1 to Cf4. Therefore, in the present embodiment, the amount of current flowing through the switching elements SW4_1 and SW5 of the cell selection SW18 is reduced as compared with the prior art. Therefore, the MOS transistors that constitute the switching elements SW4_1 and SW5 can be reduced in size. In the present embodiment, as a specific example, the gate width and the gate length of the MOS transistor are reduced to reduce the size. Since the MOS transistor is physically downsized, the parasitic capacitances C41 and C5 of the switching elements SW4_1 and SW5 are reduced.

  When the parasitic capacitance is reduced, the amount of charge transferred from the capacitor Cf5 immediately after the cell selection SW 18 is turned on to the parasitic capacitance is reduced. Also, as shown in FIG. 4, the current flowing through the detection resistors R1 to R4 is supplied from the buffer amplifiers 30 and 32. That is, unlike the conventional case, no current is supplied from the battery cells Vc1 to Vc5 via the resistors Rf0 to Rf5 of the LPF 16 and the capacitors Cf1 to Cf5. Therefore, as shown in FIG. 5, since the voltage drop at the time of measuring the battery cell voltage is small, even when the output voltage Vout is not stable, the measurement can be performed accurately (accuracy satisfying the standard).

  As a specific example, when the ON voltage of the switching elements SW4_1 and SW5 is 60V and the OFF voltage is 0V, the drop of the voltages V51 and V41 is 3mV, and the drop of the output voltage Vout is 6mV. The voltage measurement time is 500 μs.

  Here, the case where the battery voltage of the battery cell Vc5 is measured has been described in detail. However, when the battery voltages of the other battery cells Vc1 to Vc4 are measured, the switching of the cell selection SW 18 is performed for the same reason as described above. Since the elements SW0 to SW4_2 can be reduced, the parasitic capacitance can be reduced. Therefore, since the voltage drop at the time of measuring the battery cell voltage is small, the output voltage Vout is shortened to a time that can be measured within the standard. Can do.

  As described above, according to the battery monitoring IC 10 of the present embodiment, the voltage on the positive side of the battery cell selected by the switching elements SW0 to SW5 of the cell selection SW18 is the non-inverting terminal of the buffer amplifier 30 of the buffer amplifier 20. The voltage Vx1 output from the buffer amplifier 30 is input to the non-inverting terminal of the amplifier 36 of the analog level shifter 22. Further, the voltage on the negative side of the selected battery is input to the non-inverting terminal of the buffer amplifier 32, and the voltage Vy <b> 1 output from the buffer amplifier 32 is input to the inverting terminal of the amplifier 36. The analog level shifter 22 outputs the difference between the voltage values of the voltage Vx1 and the voltage Vy1 as Vout. Therefore, the difference between the two voltages of the battery voltage is output from the analog level shifter 22 as Vout.

  As described above, in the present embodiment, since the voltage is input from the cell selection SW18 to the analog level shifter 22 via the buffer amplifiers 30 and 32 having high input impedance, the current flowing through the switching elements SW0 to SW5 of the cell selection SW18 is suppressed. In addition, since the amount of current can be made smaller than before, the physical size of the MOS transistors constituting the switching elements SW0 to SW5 can be reduced. Thereby, the parasitic capacitances C0 to C5 of the cell selection SW 18 can be reduced.

  Therefore, since the drop of the voltage Vout output from the analog level shifter 22 when measuring the battery voltages of the battery cells Vc1 to Vc5 can be reduced, the output voltage Vout can be shortened to a time that can be measured within the standard.

  In the present embodiment, the power supply voltage VCC is supplied from the positive electrode of the battery cell Vc5 of the battery 14 as the drive power for the buffer amplifiers 30 and 32 of the buffer amplifier 20 and the amplifier 36 of the analog level shifter 22. Thereby, since it is not necessary to use a configuration including a new power source for driving the buffer amplifiers 30 and 32, an increase in the chip area of the battery monitoring IC 10 can be suppressed.

  [Second Embodiment]

  Hereinafter, a battery monitoring IC which is a semiconductor device according to a second embodiment of the present invention will be described in detail with reference to the drawings. FIG. 6 shows a circuit diagram of an example of a schematic configuration of the semiconductor device (battery monitoring IC) of the present embodiment. Since the battery monitoring IC 40 of this embodiment has substantially the same configuration as the battery monitoring IC 10 of the first embodiment, the same parts are denoted by the same reference numerals and detailed description thereof is omitted.

  The battery monitoring IC 40 according to the present embodiment includes a booster circuit 42. The booster circuit 42 boosts the power supply voltage VCC supplied from the positive electrode of the battery cell Vc5 of the battery 14 to a predetermined voltage VCC1 (VCC <VCC1), and drives the boosted voltage VCC1 to the buffer amplifiers 30 and 32 of the buffer amplifier 20. Supply as power supply voltage.

  In the battery monitoring IC 10 of the first embodiment, when measuring the battery voltage of the battery cell Vc5, the input voltage Vx of the buffer amplifier 30 connected to the positive electrode side of the battery cell Vc5 is Vx = V5 = VCC. As described above, the voltage value of the input voltage of the buffer amplifier 30 and the voltage value of the power supply voltage of the buffer amplifier 30 become the same voltage VCC, so that the MOS transistor in the buffer amplifier 30 operates in the non-saturated region. The output offset voltage increases. The measurement accuracy of the battery voltage by the output voltage Vout may decrease due to the influence of the offset voltage.

  In the present embodiment, the voltage VCC is boosted by the booster circuit 42 to the voltage VCC1 that allows the MOS transistor in the buffer amplifier 30 to operate in the saturation region, and the boosted VCC1 is supplied as the drive power supply voltage for the buffer amplifiers 30 and 32. . As a result, since the MOS transistors constituting the buffer amplifiers 30 and 32 operate in the saturation region, there is no offset voltage in the output voltages of the buffer amplifiers 30 and 32, and the battery voltage is measured by the output voltage Vout output from the analog level shifter 22. Accuracy is improved.

  As described above, according to the battery monitoring IC 40 of the present embodiment, the booster circuit 42 boosts the voltage VCC to the voltage VCC1 that allows the MOS transistors constituting the buffer amplifiers 30 and 32 to operate in the saturation region. Since the buffer amplifiers 30 and 32 are driven by the voltage VCC1, the measurement accuracy of the battery voltage by the output voltage Vout output from the analog level shifter 22 can be improved.

  The voltage VCC may be boosted by the booster circuit 42 to the voltage VCC1 that allows the MOS transistors constituting the buffer amplifiers 30 and 32 to operate in the saturation region. As a specific example, the voltage VCC = 60V. Yes, when the voltage value is outside the saturation region of the MOS transistor, the voltage VCC1 = 65 V that is operated in the saturation region may be boosted. A specific voltage value may be determined according to the specification of the MOS transistor.

  In addition, when the voltage VCC is a voltage value that allows the MOS transistors of the buffer amplifiers 30 and 32 to operate in the saturation region, the voltage VCC may be used as the power supply voltage without being boosted.

  In the present embodiment, the voltage VCC is boosted to the voltage VCC1 by the booster circuit 42 and supplied to the buffer amplifiers 30 and 32. However, the voltage VCC1 satisfying VCC <VCC1 is supplied from the external power supply. May be. Moreover, you may comprise so that the power supply voltage supplied to the buffer amplifiers 30 and 32 may be switched with the voltage VCC and the voltage VCC1 as needed.

  [Third Embodiment]

  Hereinafter, a battery monitoring IC which is a semiconductor device according to a third embodiment of the present invention will be described in detail with reference to the drawings. FIG. 7 shows a circuit diagram of an example of a schematic configuration of the semiconductor device (battery monitoring IC) of the present embodiment. The battery monitoring IC 50 according to the present embodiment has substantially the same configuration as the battery monitoring IC 10 according to the first embodiment and the battery monitoring IC 40 according to the second embodiment. The detailed explanation is omitted.

  The battery monitoring IC 50 according to the present embodiment includes a switching element SWK. The switching element SWK has a function of switching the output voltage Vout output from the battery monitoring IC 50 between the voltage output from the analog level shifter 22 and the voltage Vx.

  In the battery monitoring IC 10 of the first embodiment and the battery monitoring IC 40 of the second embodiment, when measuring the battery voltage of the battery cell Vc1, the buffer amplifier 32 connected to the negative electrode side of the battery cell Vc1 The input voltage Vy is the input voltage Vy = GND because the negative electrode side of the battery cell Vc1 is connected to GND. Thus, since the voltage value (GND) of the input voltage of the buffer amplifier 32 and the GND of the buffer amplifier 32 are the same, the MOS transistor in the buffer amplifier 32 operates in the non-saturated region, and the output offset voltage of the buffer amplifier 32 Becomes larger. The measurement accuracy of the battery voltage by the output voltage Vout may decrease due to the influence of the offset voltage.

  In the present embodiment, when measuring the battery voltage of the battery cell Vc1, the switching elements SW0 and SW1-2 of the cell selection SW18 are turned on, and the output voltage output to the outside of the battery monitoring IC 50 by the switching element SWK. Vout is switched from the voltage output from the analog level shifter 22 via the buffer amplifier 32 to the voltage Vx. As a result, since the positive side of the battery cell Vc1 is directly connected to the output terminal from which the output voltage Vout is output without using the buffer amplifier 32 that operates in the non-saturated region, the measurement accuracy of the battery voltage by the output voltage Vout Will improve.

  As described above, according to the battery monitoring IC 50 of the present embodiment, when the battery voltage of the battery cell Vc1 is measured, the output voltage Vout is directly output from the positive electrode side of the battery cell Vc1 by the switching element SWK. Since it is connected to the output terminal, the measurement accuracy of the battery voltage by the output voltage Vout can be improved.

  In this embodiment, when the battery cell Vc1 is measured, the output voltage Vout is output without passing through the buffer amplifier 20 and the analog level shifter 22, but the positive voltage V1 of the battery cell Vc1 is set to GND. Therefore, there is no need to convert the voltage to the GND reference voltage by the analog level shifter 22, so that no problem occurs. Further, since a high impedance circuit is connected to the subsequent stage (external) of the battery monitoring IC 50, a voltage drop due to the resistance Rf of the LPF 16 does not occur, and therefore no error due to the LPF 16 occurs.

  [Fourth Embodiment]

  Hereinafter, a battery monitoring IC which is a semiconductor device according to a fourth embodiment of the present invention will be described in detail with reference to the drawings. FIG. 8 shows a circuit diagram of an example of a schematic configuration of the semiconductor device (battery monitoring IC) of the present embodiment. The battery monitoring IC 60 according to the present embodiment has substantially the same configuration as the battery monitoring IC 10 according to the first embodiment, the battery monitoring IC 40 according to the second embodiment, and the battery monitoring IC 50 according to the third embodiment. The same parts are denoted by the same reference numerals, and detailed description thereof is omitted.

  The battery monitoring IC 60 according to the present embodiment includes short SWs 62 and 64 for connecting the output terminals and the input terminals of the buffer amplifiers 30 and 32. The short SWs 62 and 64 have a function of short-circuiting the buffer amplifiers 30 and 32 and turning off the buffer amplifiers 30 and 32, respectively.

  Since the output of the cell selection SW 18 is connected to the analog level shifter 22 via the buffer amplifiers 30 and 32, the output voltage Vout is appropriate when the buffer amplifiers 30 and 32 are not operating normally (abnormal). There is a case where the measurement accuracy of the battery voltage is lowered without being a voltage value.

  In the present embodiment, the switching elements SWP and SWN of the short SWs 62 and 64 are turned off, and the battery voltages of normal battery cells Vc1 to Vc5 through the buffer amplifiers 30 and 32 are measured. Further, the switching elements SWP and SWN of the short SWs 62 and 64 are turned on, and the battery voltages of the battery cells Vc1 to Vc5 are measured without passing through the buffer amplifiers 30 and 32. If both measurement results are compared and the measured values match (including a case where the measured values are within a predetermined allowable error range), it can be considered that the buffer amplifier 30 and the buffer amplifier 32 are operating normally. On the other hand, if they do not match, it can be regarded as abnormal. In this way, the operation of the buffer amplifiers 30 and 32 can be determined by itself.

  As described above, according to the battery monitoring IC 60 of the present embodiment, the output voltage of the analog level shifter 22 not passing through the buffer amplifiers 30 and 32 by turning on the switching elements SWP and SWK of the short SWs 62 and 64. By comparing Vout and the output voltage Vout of the analog level shifter 22 via the buffer amplifiers 30 and 32, it is possible to determine whether or not the buffer amplifiers 30 and 32 are normal, so that the measurement accuracy of the battery voltage decreases. Can be prevented.

  In the first to fourth embodiments, the dummy switches SWA and SWB and the Tammy resistors RD1 and RD2 provided in the conventional battery monitoring IC 100 (see FIG. 9) are not provided. In the first to fourth embodiments, however, the resistances Rf0 to Rf5 of the LPF 16 and the on-resistance of the cell selection SW 18 are passed through the buffer amplifiers 30 and 32 having a high input impedance. The error due to the voltage drop can be canceled. That is, since the buffer amplifiers 30 and 32 have the same functions as the conventional dummy switches SWA and SWB and the Tammy resistors RD1 and RD2, the buffer amplifiers 30 and 32 can be configured without them.

  Moreover, although the said 1st Embodiment-4th Embodiment demonstrated the case where the battery 14 was equipped with five battery cells (battery cell Vc1-Vc5), it is not restricted to this, A several battery cell is provided. The number is not particularly limited as long as they are connected in series.

  Moreover, although the said 1st Embodiment-4th Embodiment demonstrated the case where the structure of LPF16 was comprised by the (pi) type which connects the capacitor | condensers Cf1-Cf5 between the battery cells Vc1-Vc5, it does not restrict to this. Instead, for example, the capacitors Cf1 to Cf5 may be configured as a ground type that is connected between the positive electrode side of the battery cells Vc1 to Vc5 and the GND.

10, 40, 50, 60 Battery monitoring IC
14 Battery 16 LPF
18 Cell selection SW
20 Buffer amplifier 22 Analog level shifter 30, 32 Buffer amplifier 36 Amplifier 42 Booster circuit 62, 64 Short SW
Vc1, Vc2, Vc3, Vc4, Vc5 Battery cell SWK Switching element

Claims (2)

A potential at one end and a potential at the other end of each of the plurality of battery cells connected in series are input, and the selection is made based on the difference between the potential at the one end and the potential at the other end of the selected battery cell. A method of controlling a semiconductor device for detecting a voltage of a battery cell,
Selecting a battery cell for detecting a voltage by outputting a potential of one end of the battery cell selected by a first cell selection switch connected to one end of each of the plurality of battery cells to a first buffer amplifier;
Detecting the respective other end and connected by Ri before SL voltage to the potential of the other end of the battery cell selected by the second cell selection switch output to the second buffer amplifier of the plurality of battery cells Select the battery cell,
When the power supply voltage supplied from the plurality of battery cells connected in series is lower than the voltage value for operating the first transistor provided in the first buffer amplifier in the saturation region, the power supply voltage Is boosted by a boosting means to a voltage value for operating the first transistor in the saturation region, and supplied to the first buffer amplifier,
When the power supply voltage supplied from the plurality of battery cells connected in series is lower than the voltage value for operating the second transistor provided in the second buffer amplifier in the saturation region, the power supply voltage is , The voltage boosted to the voltage value for operating the second transistor in the saturation region by the boosting means, and supplied to the second buffer amplifier,
The difference between the first voltage input to the non-inverting terminal via the first buffer amplifier and the second voltage input to the inverting terminal via the second buffer amplifier is the selected battery. Including outputting from the analog level shifter to the output terminal as the voltage of the cell,
Among the plurality of battery cells, when a battery cell in which the potential of the other end is connected to the ground is selected,
The difference between the first voltage input to the non-inverting terminal via the first buffer amplifier and the second voltage input to the inverting terminal via the second buffer amplifier is the potential at the other end. Is output from the analog level shifter to the output terminal as the voltage of the battery cell connected to the ground,
The voltage detected as that of the selected battery cell is switched by the switching element from the voltage of the battery cell connected to the ground to the potential of the other end output from the analog level shifter ,
Directly connecting the one end of the battery cell to which the potential of the other end is connected to the ground without going through the second buffer amplifier, to the output terminal;
A method for controlling a semiconductor device. In the state where the input terminal and the output terminal of the first buffer amplifier are not connected by the first switch element and the input terminal and the output terminal of the second buffer amplifier are not connected by the second switch element. A first differential voltage between the first voltage and the second voltage output from a level shifter and an input terminal and an output terminal of the first buffer amplifier are connected by the first switch element; A second differential voltage between the first voltage and the second voltage output from the analog level shifter in a state where an input terminal and an output terminal of the second buffer amplifier are connected by the second switch element; Compare, and
When the first differential voltage and the second differential voltage match, it is determined that the first buffer amplifier and the second buffer amplifier are operating normally, and the first differential voltage The control method according to claim 1, further comprising: determining that the first buffer amplifier and the second buffer amplifier are abnormal when the second differential voltage does not match the second differential voltage.

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