JP6270936B1 - Optical waveguide device - Google Patents

Abstract

Polarization separation is performed in a wide wavelength band. A first waveguide core, a second waveguide core, and a third waveguide core are provided. The first waveguide core is provided in parallel to an imaginary line segment L connecting the first point P1 and the second point P2. The second waveguide core and the third waveguide core are provided at a position sandwiching the first waveguide core, spaced apart from the first waveguide core and parallel to the first waveguide core. The first waveguide core includes a first tapered waveguide core 52 whose width becomes narrower from the first point side toward the second point side. The second waveguide core includes a second tapered waveguide core 62 that increases in width from the first point side toward the second point side. The third waveguide core includes a third tapered waveguide core 72 that increases in width from the first point side toward the second point side. [Selection] Figure 1

Description

  The present invention relates to an optical waveguide element that can be used as a polarization separation element.

  As the amount of information transmitted increases, optical wiring technology has attracted attention. In the optical wiring technology, using an optical device using an optical fiber or an optical waveguide element as a transmission medium, information transmission between elements in information processing equipment, between boards, or between chips is performed by an optical signal. As a result, it is possible to improve band limitation due to the use of electrical wiring, which is a bottleneck in information processing equipment that requires high-speed signal processing.

  The optical device includes an optical element such as an optical transmitter or an optical receiver. These optical elements can be spatially coupled to each other using a lens, for example, after performing complicated optical axis alignment for adjusting the center position (light receiving position or light emitting position) of each optical element to the design position.

  Here, as a means for coupling the optical elements, there is a technique using an optical waveguide element instead of a lens. When the optical waveguide element is used, light is confined in the optical waveguide and propagates, so that unlike the case where a lens is used, complicated optical axis alignment is not required. Therefore, the optical device is suitable for mass production because the assembly process is simplified.

As an optical waveguide element, there is a silicon (Si) waveguide using silicon as a material. In the Si waveguide, a waveguide core that substantially becomes a light transmission path is formed using Si as a material. Since the waveguide core made of Si has a very large refractive index difference from, for example, quartz (that is, silicon oxide (SiO ₂ )) cladding, light can be strongly confined in the waveguide core. As a result, a small curved waveguide with a bending radius reduced to, for example, about several μm can be realized, which is advantageous for downsizing the entire optical device.

  Further, when manufacturing an optical waveguide element including a Si waveguide, it is possible to use a manufacturing process of a semiconductor device such as a CMOS (Complementary Metal Oxide Semiconductor). Therefore, realization of photoelectric fusion (silicon photonics) in which electronic functional circuits and optical functional circuits are collectively formed on a chip is expected.

  Hitherto, optical circuits having various functions using Si waveguides have been provided. However, in general, many exhibit optimal performance in one polarization state. For this reason, for example, when a TM (Transverse Magnetic) mode is mixed in an element operating in the TE (Transverse Electric) mode, desired performance cannot be exhibited. Since polarization is mixed in the optical signal input from the outside to the optical circuit, various methods are used to separate the polarization.

  As an example of a polarization beam splitting element using a Si waveguide, there is one configured by a directional coupler including two Si waveguides arranged side by side (for example, see Patent Document 1). This directional coupler performs polarization separation using a difference in coupling action length between the TE polarization and the TM polarization.

JP 2009-244326 A

  Here, in the directional coupler disclosed in Patent Document 1 of the above-described conventional example, it is necessary to increase the coupling action length Lc in order to widen the use band.

  However, when the coupling action length Lc is increased, the tolerance for manufacturing error is lowered, for example, the interval between the two Si waveguides constituting the directional coupler fluctuates. As a result, there is a possibility that the TE polarization and the TM polarization may not be separated successfully.

  Further, for example, the optimum value of the interval between the Si waveguides depends on the wavelength. For this reason, for example, it is difficult to perform wavelength separation at a wavelength of 1300 nm in a configuration in which the interval between Si waveguides is optimized to a wavelength of 1550 nm.

  The present invention has been made in view of the above-described problems, and an object of the present invention is to provide an optical waveguide element that can be used as a polarization separation element and has a wide utilization band. There is.

  In order to achieve the above-described object, the optical waveguide device of the present invention includes a first waveguide core, a second waveguide core, and a third waveguide core. The first waveguide core is provided in parallel with a virtual line segment connecting the first point and the second point. The second waveguide core and the third waveguide core are provided at a position sandwiching the first waveguide core, spaced apart from the first waveguide core and parallel to the first waveguide core.

  The first waveguide core includes a first tapered waveguide core whose width becomes narrower from the first point side toward the second point side. The second waveguide core includes a second tapered waveguide core whose width increases from the first point side toward the second point side. The third waveguide core includes a third taper waveguide core that increases in width from the first point side toward the second point side.

  The width and thickness of the end on the first point side of the first tapered waveguide core satisfy the single mode condition for the TE polarized wave and the TM polarized wave. The thickness of the second waveguide core is smaller than the thickness of the first waveguide core, and the width of the end of the second taper waveguide core on the second point side is the first point side of the first taper waveguide core. Greater than edge width. The thickness of the third waveguide core is equal to the thickness of the first waveguide core, and the width of the end portion on the second point side of the third taper waveguide core is the first point of the first taper waveguide core. Equal to the width of the side edge.

  The position of the end portion on the first point side of the second tapered waveguide core is on the first point side with respect to the position of the end portion on the first point side of the third tapered waveguide core.

  According to a preferred embodiment of the optical waveguide device of the present invention, the first waveguide core includes a first uniform width waveguide core, the second waveguide core includes a second uniform width waveguide core, and a third The waveguide core includes a third equal width waveguide core.

  The first equal-width waveguide core is a waveguide core connected to the first point side end of the first tapered waveguide core. The width and thickness of the first uniform-width waveguide core satisfy the single mode condition for TE polarization and TM polarization.

  The second equal width waveguide core is a waveguide core connected to the second point side end of the second tapered waveguide core. The width and thickness of the second equal-width waveguide core satisfy the single mode condition for TE polarization.

  The third equal width waveguide core is a waveguide core connected to the second point side end of the third tapered waveguide core. The width and thickness of the third uniform-width waveguide core satisfy the single mode condition for TE polarization and TM polarization.

  According to another preferred embodiment of the optical waveguide device of the present invention, the second waveguide core is a waveguide core connected to an end portion on the first point side of the second tapered waveguide core, A sub-waveguide core having a width and a thickness equal to the width and thickness of the end portion on the first point side of the second tapered waveguide core is provided. The third waveguide core is a waveguide core connected to an end portion on the first point side of the third taper waveguide core, and the width and thickness of the third waveguide core are on the first point side of the third taper waveguide core. A sub-waveguide core equal to the width and thickness of the end of the substrate.

  According to the optical waveguide device of the present invention, TE polarized light propagating through the first tapered waveguide core from the first point side toward the second point side is transferred to the second tapered waveguide core having a small thickness. To do. Also, TM polarized light propagating through the first tapered waveguide core from the first point side toward the second point side cannot be transferred to the second tapered waveguide core, but is transferred to the third tapered waveguide core. To do.

  Further, the width of the first taper waveguide core becomes narrower from the first point side toward the second point side, and the second taper waveguide core and the third taper waveguide core are from the first point side to the second point side. The width becomes wider. For this reason, the first tapered waveguide core and the second and third tapered waveguide cores have a wide wavelength band in which the propagation constants coincide, that is, the utilization band is wide.

  Further, since the position of the end portion on the first point side of the second taper waveguide core is on the first point side with respect to the position of the end portion on the first point side of the third taper waveguide core, The TE polarized wave propagating through the taper waveguide core easily shifts to the second taper waveguide core and hardly shifts to the third taper waveguide core. For this reason, this optical waveguide device is excellent in polarization separation ability.

  Further, the arrangement of the second tapered waveguide core and the third tapered waveguide core with respect to the first tapered waveguide core makes the change in the refractive index distribution in the direction along the imaginary line segment gentle. As a result, when the light propagating through the first waveguide core shifts to the second waveguide core or the third waveguide core, reflection or scattering hardly occurs, and loss in the optical waveguide element can be reduced.

  When the Si waveguide core is formed by etching the Si layer, the tip of the waveguide core has a manufacturing error between the designed pattern and the manufactured pattern, such as a rounded corner. May be big. As a result, the optical waveguide element may not function as designed. On the other hand, when the sub-waveguide core is provided at the end of the second taper waveguide core and the third taper waveguide core on the first point side, even if a manufacturing error in the sub-waveguide core portion is large, For the second tapered waveguide core and the third tapered waveguide core, the manufacturing error is small.

It is the schematic which shows the optical waveguide element of this invention. (A) is a schematic plan view, and (B) is a schematic cross-sectional view. It is process drawing explaining the manufacturing method of an optical waveguide element. It is a figure which shows the result of having measured the polarization separation characteristic about TE polarization | polarized-light and TM polarization | polarized-light in a 1250nm-1600nm wavelength band.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the shape, size, and arrangement relationship of each component are merely schematically shown to the extent that the present invention can be understood. In the following, a preferred configuration example of the present invention will be described. However, the material and numerical conditions of each component are merely preferred examples. Therefore, the present invention is not limited to the following embodiments, and many changes or modifications that can achieve the effects of the present invention can be made without departing from the scope of the configuration of the present invention.

(Configuration of optical waveguide element)
With reference to FIG. 1, an embodiment of the optical waveguide device of the present invention will be described. FIG. 1A is a schematic plan view showing an optical waveguide device of the present invention. In FIG. 1A, only the waveguide core is shown, and the cladding layer and the like are omitted. FIG. 1B is a schematic cross-sectional view of the optical waveguide element shown in FIG.

  The optical waveguide device includes a support substrate 10, a lower clad 20, and a waveguide core 30. The support substrate 10 is composed of a flat plate made of, for example, single crystal Si.

The lower clad 20 is provided on the support substrate 10 and covers the upper surface 10 a of the support substrate 10. The lower cladding 20 is formed using, for example, SiO ₂ as a material.

  The waveguide core 30 includes first to third waveguide cores 50, 60 and 70. The first to third waveguide cores 50, 60 and 70 are made of a material (for example, Si) having a higher refractive index than that of the lower cladding 20. As a result, the first to third waveguide cores 50, 60, and 70 function as substantial light transmission paths, and the input light propagates in the propagation direction according to the planar shape. The first to third waveguide cores 50, 60 and 70 are separated from the support substrate 10 by a distance in the range of at least about 1 to 3 μm in order to prevent the propagating light from escaping to the support substrate 10. Preferably it is formed.

  On the lower clad 20, an upper clad 40 that covers the waveguide core 30 is provided. The upper clad 40 is made of a material having a lower refractive index than the waveguide core 30 such as silicon oxide or silicon nitride.

  Next, the shape of the waveguide core 30 will be described. The first waveguide core 50 is provided in parallel to an imaginary line segment L connecting the first point P1 and the second point P2. In addition, the second waveguide core 60 and the third waveguide core 70 are provided at a position sandwiching the first waveguide core 50, separated from the first waveguide core 50, and parallel to the first waveguide core 50. It has been.

  In the following description, the direction from the first point P1 to the second point P2 along the virtual line segment L is defined as the light propagation direction. The direction along the thickness of the support substrate 10 is defined as the thickness direction, and the direction along the light propagation direction is defined as the length direction. Moreover, let the direction orthogonal to a length direction and a thickness direction be a width direction.

  The first waveguide core 50 includes a first tapered waveguide core 52 and a first uniform width waveguide core 54. The first equal width waveguide core 54 is connected to the end of the first tapered waveguide core 52 on the first point side. The width of the first tapered waveguide core 52 decreases from the first point P1 side toward the second point P2 side. The width of the end of the first tapered waveguide core 52 on the first point P1 side is the same as the width of the first uniform-width waveguide core 54, and the single mode condition is set for the TE polarized wave and the TM polarized wave. Set to meet.

  The second waveguide core 60 includes a second tapered waveguide core 62 and a second uniform width waveguide core 64. The second equal width waveguide core 64 is connected to the end of the second tapered waveguide core 62 on the second point P2 side. The thickness of the second waveguide core 60 is smaller than the thickness of the first waveguide core 50. The thickness of the second waveguide core 60 is set so as to satisfy the single mode condition for the TE polarization and not satisfy the single mode condition for the TM polarization. Thereby, TE-polarized single mode light can propagate through the second waveguide core 60, but TM-polarized single mode light cannot propagate through the second waveguide core 60.

  The width of the second tapered waveguide core 62 increases from the first point P1 side toward the second point P2 side. The width of the end portion of the second tapered waveguide core 62 on the second point P2 side is the same as the width of the second uniform width waveguide core 64 and is larger than the width of the first uniform width waveguide core 54. The width of the second equal width waveguide core 64 is set so as to satisfy the single mode condition for the TE polarized wave. Since the thickness of the second waveguide core 60 is smaller than the thickness of the first waveguide core 50, if the width of the first uniform-width waveguide core 54 is equal to the width of the second uniform-width waveguide core 64, the second The cross-sectional area of the equal-width waveguide core 64 perpendicular to the light propagation direction is smaller than the cross-sectional area of the first equal-width waveguide core 54. For this reason, there is a risk of light loss due to the reduction in area. On the other hand, by making the width of the second uniform-width waveguide core 64 larger than the width of the first uniform-width waveguide core 54, the area of the cross section of the second uniform-width waveguide core 64 becomes the first etc. It becomes close to the cross-sectional area of the width waveguide core 54, and light loss can be reduced.

  The third waveguide core 70 includes a third tapered waveguide core 72 and a third equal width waveguide core 74. The third equal width waveguide core 74 is connected to the end of the third tapered waveguide core 72 on the second point P2 side. The thickness of the third waveguide core 70 is equal to the thickness of the first waveguide core 50. The width of the third uniform width waveguide core 74 is equal to the width of the first uniform width waveguide core 54. The width and thickness of the third uniform-width waveguide core 74 satisfy the single mode condition for both the TE polarized wave and the TM polarized wave.

  The width of the third taper waveguide core 72 increases from the first point P1 side toward the second point P2 side. The width of the end of the third tapered waveguide core 72 on the second point P2 side is the same as the width of the third constant-width waveguide core 74.

  According to the optical waveguide element described above, the TE-polarized light propagating through the first tapered waveguide core 52 from the first point P1 side toward the second point P2 side has a small thickness. 62. Also, TM polarized light propagating through the first taper waveguide core 52 from the first point P1 side to the second point P2 side cannot be transferred to the second taper waveguide core 62, and the third taper waveguide light is transmitted. Transition to the waveguide core 72.

  Further, the first taper waveguide core 52 becomes narrower from the first point P1 side to the second point P2 side, and the second taper waveguide core 62 and the third taper waveguide core 72 are at the first point P1. The width increases from the side toward the second point P2 side. For this reason, the first tapered waveguide core 52 and the second and third tapered waveguides 62 and 72 have a wide wavelength band in which propagation constants coincide, that is, a wide usage band.

  In this embodiment, the positions of the end portions of the second tapered waveguide core 62 and the third tapered waveguide core 72 on the first point P1 side are the end portions of the first tapered waveguide core 52 on the first point P1 side. And the position of the end on the second point P2 side. The position of the end portion on the second point P2 side of the first taper waveguide core 52 is the position of the end portion on the first point P1 side of the second taper waveguide core 62 and the third taper waveguide core 72. It is between the positions of the end portions on the second point P2 side. Furthermore, the position of the end of the second taper waveguide core 62 on the first point P1 side is closer to the first point P1 side than the position of the end of the third taper waveguide core 72 on the first point P1 side. is there. For this reason, the TE polarization propagating through the first taper waveguide core 52 easily shifts to the second taper waveguide core 62 and hardly shifts to the third taper waveguide core 72. As a result, this optical waveguide device is excellent in polarization separation ability.

  In addition, the position of the end portion on the first point P1 side of the second tapered waveguide core 62 is on the first point P1 side with respect to the position of the end portion on the first point P1 side of the third tapered waveguide core 72. As a result, compared to a configuration in which the position of the end portion on the first point P1 side of the second taper waveguide core 62 is equal to the position of the end portion on the first point P1 side of the third taper waveguide core 72, an imaginary line segment is obtained. The change in the refractive index distribution in the direction along the line becomes gentle. As a result, when light propagating through the first waveguide core shifts to the second waveguide core or the third waveguide core, light reflection or scattering hardly occurs, and loss in the optical waveguide element can be reduced.

  In the embodiment of the optical waveguide element, the second waveguide core 60 and the third waveguide core 70 include sub-waveguide cores 66 and 76, respectively.

  The sub-waveguide core 66 included in the second waveguide core 60 is connected to the end of the second taper waveguide core 62 on the first point side, and the width and thickness of the sub-waveguide core 66 are the second taper waveguide core 62. It is equal to the width and thickness of the end on the one point P1 side. The sub-waveguide core 76 included in the third waveguide core 70 is connected to the end of the third taper waveguide core 72 on the first point P1 side, and has a width and thickness of the third taper waveguide core. 72 equal to the width and thickness of the end portion on the first point P1 side.

  The sub-waveguide cores 66 and 76 are provided to reduce a difference between a designed pattern and a manufactured pattern, that is, a so-called manufacturing error. In the case where the Si waveguide is formed by etching the Si layer or the like, there may be a large manufacturing error such as a rounded corner at the tip of the waveguide.

  In the configuration without the sub-waveguide cores 66 and 76, a manufacturing error becomes large at the end of the second taper waveguide core and the third taper waveguide cores 62 and 72 on the first point P1 side. The device may not function as designed.

  On the other hand, when the sub-waveguide cores 66 and 76 are provided at the end of the second taper waveguide core and the third taper waveguide cores 62 and 72 on the first point P1 side, Even in the case where the manufacturing error is large, the manufacturing error is small especially for the second taper waveguide core and the third taper waveguide cores 62 and 72, so that the optical waveguide element can easily function as designed. If manufacturing errors due to etching are not a problem, the sub-waveguide core need not be provided.

(Method for manufacturing optical waveguide element)
The optical waveguide device of this embodiment can be easily manufactured by using an SOI (Silicon On Insulator) substrate.

  With reference to FIG. 2, an example of the manufacturing method of this optical waveguide device will be described. 2A to 2E are process diagrams for explaining a method of manufacturing an optical waveguide device, and are schematic end views of structures obtained in respective manufacturing stages. These end surfaces shown in FIGS. 2A to 2E correspond to the end surfaces shown in FIG.

First, the SOI substrate 100 in which the support substrate 10, the SiO ₂ layer 20, and the Si layer 32 are stacked in this order is prepared (FIG. 2A). Here, as the SOI substrate 100, a substrate in which the thickness of the Si layer 32 corresponds to the thickness of the waveguide core 30 to be formed is used. The SiO ₂ layer 20 becomes the lower clad.

  Next, a positive resist is applied onto the Si layer 32 by spin coating. Then, exposure and development are performed using a photomask corresponding to the planar shape of the first waveguide core 50 and the third waveguide core 70 to be formed. As a result, a resist layer 92 is formed on the Si layer 32 on the region including the formation region of the first waveguide core 50 and the third waveguide core 70 (FIG. 2B).

  Next, using the resist layer 92 as a mask, the Si layer 32 is etched by dry etching such as plasma etching until the thickness of the second waveguide core 60 to be formed is reached. As a result, the thickness before etching remains in the region where the resist layer 92 of the Si layer 34 is formed, and the other region becomes the thickness of the second waveguide core 60 to be formed (FIG. 2C )).

  Next, a positive resist is applied again on the Si layer 34 by spin coating. Then, exposure and development are performed using a photomask corresponding to the planar shapes of the first waveguide core 50, the second waveguide core 60, and the third waveguide core 70 to be formed. As a result, a resist layer 94 is formed on the Si layer 34 on the formation region of the first waveguide core 50, the second waveguide core 60, and the third waveguide core 70 (FIG. 2D).

  Next, the Si layer 34 is removed by, for example, plasma etching using the resist layer 94 as a mask. As a result, the first waveguide core 50, the second waveguide core 60, and the third waveguide core 70 are formed as the remaining Si layer (FIG. 2E).

Next, the structure obtained in FIG. 2E is covered with the first waveguide core 50, the second waveguide core 60, and the third waveguide core 70 by using, for example, a CVD (Chemical Vapor Deposition) method. SiO ₂ is deposited. Thereby, the upper clad 40 is formed. As a result, the optical waveguide element shown in FIG. 1 is formed.

  Thus, this optical waveguide element can be manufactured to the extent that a single photolithography process and a dry etching process are added to the process of manufacturing a conventional Si waveguide. That is, it is possible to easily manufacture a polarization separation element having a wide wavelength band without complicating the manufacturing process.

  Here, although the example in which the resist layer 92 is formed integrally on the region including the formation region of the first waveguide core 50 and the third waveguide core 70 has been described, the present invention is not limited to this. The resist layer 92 may be formed on the formation region of the first waveguide core 50 and the third waveguide core 70, respectively.

(Characteristic evaluation)
The inventor conducted an experiment for evaluating the characteristics of the optical waveguide element described above. Hereinafter, the conditions and results of this experiment will be described.

  The width W10 of the first uniform waveguide core and the width W30 of the third uniform waveguide core were 270 nm. The thickness t10 of the first uniform waveguide core and the thickness t30 of the third uniform waveguide core were 270 nm.

  On the other hand, the width W20 of the second uniform waveguide core and the thickness t20 of the second uniform waveguide core were set to 440 nm and 220 nm, respectively.

  Further, the lengths L11 to L31 of the first to third equal-width waveguide cores are set to 10 μm, and the lengths of the first to third tapered waveguide cores are set to 200 μm, 200 μm, and 175 μm, respectively. The length of each of the sub-waveguide cores included in the waveguide core was 25 μm.

  The center distance between the first waveguide core and the second waveguide core was 0.60 μm, and the center distance between the first waveguide core and the third waveguide core was 0.50 μm.

  In addition, the position of the end portion on the first point side of the second tapered waveguide core is provided on the first point side of 25 μm with respect to the position of the end portion on the first point side of the third taper waveguide core. The length in the direction along the imaginary line segment L of the region where the first tapered waveguide core and the second tapered waveguide core are provided in parallel is 145 μm. At this time, the length in the direction along the imaginary line segment of the region where the first taper waveguide core and the third taper waveguide core are provided in parallel is 120 μm.

  The waveguide core is made of silicon, and the lower clad and the upper clad are made of silicon oxide.

  FIG. 3 shows the results of measuring polarization separation characteristics for TE polarized waves and TM polarized waves in the wavelength band of 1250 nm to 1600 nm.

  Here, the end on the first point P1 side of the first uniform-width waveguide core 54 is used as an input port. The end of the bent waveguide core provided in the direction away from the third waveguide core 70 at the end on the second point P2 side of the second uniform width waveguide core 64 and connected to the second uniform width waveguide core 64 The end on the opposite side of the part is the TE output port. In addition, a bent waveguide core provided in the direction away from the second waveguide core 60 is connected to the third constant width waveguide core 74 at the end of the third uniform width waveguide core 74 on the second point P2 side. The end opposite to the end is defined as the TM output port.

  FIG. 3 shows the wavelength [unit: nm] on the horizontal axis and the transmittance [unit: dB] on the vertical axis.

  In FIG. 3, a curve I indicates the TE polarization output from the TE output port when TE polarization light is input to the input port. Curve II represents the TE polarization output from the TM output port when TE polarization light is input to the input port. A curve III indicates the TM polarization output from the TM output port when TM polarization light is input to the input port. A curve IV indicates the TM polarization output from the TE output port when TM polarization light is input to the input port.

  As shown by the curves I and II, when TE polarized light is input to the input port, the TE polarized light intensity output from the TE output port over the wide wavelength band of 1250 to 1600 nm is the TM output port. It can be seen that it is larger than the light intensity of the TE polarized light output from the.

  Further, as indicated by the curves III and IV, when TM polarized light is input to the input port, the TM polarized light intensity output from the TM output port is TE over a wide wavelength band of 1250 to 1600 nm. It can be seen that the intensity is higher than the TM polarized light intensity output from the output port. Thus, it has been confirmed that good polarization separation characteristics can be obtained over a wide wavelength band of 1250 to 1600 nm.

DESCRIPTION OF SYMBOLS 10 Support substrate 20 Lower clad 30 Waveguide core 32, 34 Si layer 40 Upper clad 50 1st waveguide core 52 1st taper waveguide core 54 1st equal width waveguide core 60 2nd waveguide core 62 2nd taper guide Waveguide core 64 Second uniform-width waveguide core 66, 76 Sub-waveguide core 70 Third waveguide core 72 Third taper waveguide core 74 Third uniform-width waveguide core 92, 94 Resist layer 100 SOI substrate

Claims (5)

A first waveguide core provided parallel to an imaginary line segment connecting the first point and the second point;
A second waveguide core and a third waveguide core are provided at positions sandwiching the first waveguide core, spaced apart from the first waveguide core and provided in parallel with the first waveguide core. ,
The first waveguide core includes a first tapered waveguide core whose width decreases from the first point side toward the second point side,
The second waveguide core includes a second tapered waveguide core whose width increases from the first point side toward the second point side,
The third waveguide core includes a third tapered waveguide core whose width increases from the first point side toward the second point side,
The width and thickness of the end on the first point side of the first tapered waveguide core satisfy a single mode condition with respect to TE polarization and TM polarization,
The thickness of the second waveguide core is smaller than the thickness of the first waveguide core, and the width of the end portion on the second point side of the second taper waveguide core is the width of the first taper waveguide core. Larger than the width of the end on the first point side,
The thickness of the third waveguide core is equal to the thickness of the first waveguide core;
The width of the end portion on the second point side of the third tapered waveguide core is equal to the width of the end portion on the first point side of the first tapered waveguide core;
Position of the end of the first point side of the second tapered waveguide core, with respect to the position of the end of the first point side of the third tapered waveguide core, Ri the first point side near ,
The TE polarization input to the first waveguide core transitions to the second waveguide core,
The TM polarization is input to the first waveguide core optical waveguide device which is characterized that you transition to the third waveguide core. The first waveguide core includes a first constant-width waveguide core connected to an end of the first tapered waveguide core on the first point side,
The second waveguide core includes a second equal-width waveguide core connected to an end of the second tapered waveguide core on the second point side,
The third waveguide core includes a third equal-width waveguide core connected to an end of the third tapered waveguide core on the second point side,
The width and thickness of the first equal-width waveguide core are equal to the width and thickness of the end on the first point side of the first tapered waveguide core,
The width and thickness of the second equal width waveguide core are equal to the width and thickness of the end of the second tapered waveguide core on the second point side,
2. The optical device according to claim 1, wherein a width and a thickness of the third equal-width waveguide core are equal to a width and a thickness of an end portion on the second point side of the third tapered waveguide core. Waveguide element. The second waveguide core includes a sub-waveguide core connected to an end of the second tapered waveguide core on the first point side,
The third waveguide core includes a sub-waveguide core connected to an end of the third tapered waveguide core on the first point side,
The width and thickness of the sub-waveguide core provided in the second waveguide core are equal to the width and thickness of the end portion on the first point side of the second tapered waveguide core,
The width and thickness of the sub-waveguide core included in the third waveguide core are equal to the width and thickness of the end portion on the first point side of the third taper waveguide core. 2. The optical waveguide device according to 2. Comprising silicon oxide and silicon sequentially laminated on a support substrate;
The silicon oxide constitutes the lower cladding;
The optical waveguide element according to any one of claims 1 to 3 , wherein the silicon constitutes the first to third waveguide cores. An upper clad covering the first to third waveguide cores is provided on the lower clad,
The optical waveguide device according to claim 4 , wherein the upper clad is made of silicon oxide or silicon nitride.

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