JP6268902B2 - Developing method and developing apparatus - Google Patents
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- 238000000034 method Methods 0.000 title claims description 66
- 238000011161 development Methods 0.000 claims description 121
- 239000000758 substrate Substances 0.000 claims description 33
- 238000012545 processing Methods 0.000 claims description 23
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- 238000005259 measurement Methods 0.000 claims description 9
- 230000002401 inhibitory effect Effects 0.000 claims description 4
- 230000001186 cumulative effect Effects 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 13
- 238000010894 electron beam technology Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 238000012937 correction Methods 0.000 description 2
- 238000007865 diluting Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000009034 developmental inhibition Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
Description
本発明は、フォトマスク製造方法に関するものであり、特に、現像工程におけるレジストパターン形成時に発生する現像ローディングを低減するための現像方法及び現像装置に関するものである。 The present invention relates to a photomask manufacturing method, and more particularly to a development method and a development apparatus for reducing development loading that occurs when a resist pattern is formed in a development process.
（フォトマスク製造における現像ローディングの説明）
半導体デバイスの製造プロセスなど微細加工が要求されるパターンの形成には、光学的にパターンを転写する方法（フォトリソグラフィ）が用いられていた。フォトリソグラフィでは、ステッパー等の露光装置を用い、原版となるフォトマスクに光を照射することにより、フォトマスクのパターンを対象物（ウェハなど）上に転写している。フォトマスクはパターン転写の原版であるため、高い寸法精度が求められる。フォトマスクのパターニングでは、その精度の高さと解像性の高さから、電子線描画機によるパターニングが主となっている。フォトマスクでは、密な領域と疎なパターン領域が混在する場合がある。そのため、フォトマスク作製のリソグラフィ工程における現像工程においては、パターンが密な領域で現像液が局所的に不足することにより、パターン寸法に細りが生じる現象（現像ローディング）が起こることが知られている。特に電子線用レジストでは、フォトレジストに比べて溶解速度が低く、現像ローディングの影響が大きいことが報告されている。現像ローディングによるパターン疎密の寸法差を最小限に抑えるためには、スプレー現像、パドル現像などの現像方式の最適化や、現像時間、現像レシピなどの現像条件の最適化が必要である。
(Explanation of development loading in photomask manufacturing)
An optical pattern transfer method (photolithography) has been used to form a pattern that requires fine processing, such as a semiconductor device manufacturing process. In photolithography, an exposure apparatus such as a stepper is used to irradiate light on a photomask serving as an original, thereby transferring a photomask pattern onto an object (such as a wafer). Since the photomask is an original for pattern transfer, high dimensional accuracy is required. In photomask patterning, patterning by an electron beam drawing machine is mainly used because of its high accuracy and high resolution. In a photomask, a dense area and a sparse pattern area may be mixed. Therefore, it is known that in the development process in the lithography process of photomask fabrication, a phenomenon (development loading) in which the pattern dimension is narrowed due to local shortage of the developer in a dense pattern region occurs. . In particular, it has been reported that an electron beam resist has a lower dissolution rate than a photoresist and is greatly affected by development loading. In order to minimize the difference in pattern density due to development loading, it is necessary to optimize development methods such as spray development and paddle development, and development conditions such as development time and development recipe.
（現像ローディングとフォギング現象の説明）
一方、電子線による露光の場合、パターンが密な領域ではフォギング（fogging）の現象が起こることが知られている。Foggingとは、描画機の電子銃より基板に打ち込まれた電子が、基板表面などで散乱、反射を起こし、一部の電子がレジスト面から飛び出していき、描画機チャンバーの内壁で更に反射して、再度レジストへ入射するものである。パターン密度が高いほどfoggingの影響は大きくなり、このfoggingの影響する領域は数十mmにも及ぶことが知られている。レジストはfoggingによる再入射電子のエネルギーによりうっすら感光し、foggingの影響を受けたパターン（現像での溶解部分）寸法では太りが生じる。このようなfoggingと現像ローディングの両方がパターン寸法に影響を与えており、foggingは描画機の補正機能により低減することができるが、現像ローディングを補正する機能については実用化がされていないためプロセス等で低減する必要がある。
(Explanation of development loading and fogging phenomenon)
On the other hand, in the case of exposure with an electron beam, it is known that a fogging phenomenon occurs in a dense pattern region. Fogging means that electrons struck onto the substrate from the electron gun of the drawing machine are scattered and reflected on the substrate surface, etc., and some of the electrons jump out of the resist surface and are further reflected by the inner wall of the drawing machine chamber. In this case, the light is incident on the resist again. It is known that the influence of fogging increases as the pattern density increases, and the area affected by fogging extends to several tens of millimeters. The resist is slightly sensitized by the energy of re-incidence electrons caused by fogging, and the pattern is affected by fogging (dissolved part in development) and becomes thick. Both fogging and development loading have an effect on pattern dimensions, and fogging can be reduced by the correction function of the drawing machine, but the function to correct development loading has not been put into practical use. It is necessary to reduce by such as.
このような問題を解決するために、現像ローディング成分のみを抽出する方法として、電子線露光と光露光を組み合わせた方法、また成分抽出用に発明されたパターンが提案されている。（特許文献１、２）また、現像時の現像阻害成分を取り除く、または低減するため様々な現像方式の発明が提案されている（特許文献３、４）。 In order to solve such a problem, as a method for extracting only the development loading component, a method combining electron beam exposure and light exposure and a pattern invented for component extraction have been proposed. (Patent Documents 1 and 2) In addition, inventions of various development methods have been proposed in order to remove or reduce development-inhibiting components during development (Patent Documents 3 and 4).
しかしながら、現像ローディング成分を抽出する方法で成分抽出を行い、現像方法の最適化を行っても、レジスト種によって特性が異なることなどにより、現像ローディング成分を無くすことは難しい。また、現像時の現像阻害成分を取り除く現像方式においては、現像液をマスク面に滞留させないようにするため、マスク面上に現像液に浸されていない部分が発生してしまうため、欠陥面でのマスク品質の低下を招いてしまう可能性が高い吐考えられる。 However, even if the component extraction is performed by the method of extracting the development loading component and the development method is optimized, it is difficult to eliminate the development loading component because the characteristics are different depending on the resist type. Further, in the development system that removes development-inhibiting components during development, in order to prevent the developer from staying on the mask surface, a portion that is not immersed in the developer occurs on the mask surface. It is considered that there is a high possibility that the mask quality will be degraded.
そこで、本発明は現像ローディング成分の抽出及び現像阻害成分を取り除く現像方式などの複雑な工程を必要とせず、実際にマスク面内の寸法を測定し、その結果をフィードバックさせて局所的にパターン面積密度に応じた追加現像処理を行うことで、マスク面内の寸法誤差を低減する現像方法及び現像装置を提供することを目的とする。 Therefore, the present invention does not require a complicated process such as extraction of a development loading component and a development method that removes a development inhibition component, and actually measures the dimension in the mask surface and feeds back the result to locally determine the pattern area. An object of the present invention is to provide a developing method and a developing apparatus that reduce the dimensional error in the mask surface by performing additional development processing according to the density.
請求項１に記載される本発明による現像方法は、
基板上に形成されたレジストパターンを現像する現像方法において、
現像後のレジストパターンの寸法測定を行い、
前記寸法測定の結果と実パターン面積密度に現像ローディングの影響距離が加味されたレジストパターンの領域に対して、追加現像処理を１回以上行い、
現像ローディングを低減してマスク基板の面内寸法誤差を低減することを特徴とする。
The developing method according to the present invention described in claim 1 comprises:
In a developing method for developing a resist pattern formed on a substrate,
Measure the dimensions of the resist pattern after development,
Additional development processing is performed at least once for the region of the resist pattern in which the influence distance of development loading is added to the result of the dimension measurement and the actual pattern area density,
It is characterized in that the development loading is reduced to reduce the in-plane dimensional error of the mask substrate.
請求項２に記載される本発明による現像方法は、
前記追加現像処理は、実パターンの面積密度と現像ローディングの影響距離を考慮して作成されたパターンの面積密度マップに基づいて、マスク面内の所望の領域における追加現像処理の積算現像回数が設定されることを特徴とする請求項１に記載の現像方法である。
The developing method according to the present invention as defined in claim 2 comprises:
In the additional development processing, the cumulative development number of additional development processing in a desired region in the mask plane is set based on the area density map of the pattern created in consideration of the area density of the actual pattern and the development loading influence distance. a developing method according to claim 1, characterized in that it is.
請求項３に記載の本発明は、
前記追加現像処理はインクジェット方式機構を搭載した現像ノズルによって現像液がレジストパターンに吐出されることを特徴とする請求項１または２に記載の現像方法である。
The present invention according to claim 3 provides:
3. The developing method according to claim 1, wherein in the additional development processing, a developer is discharged onto the resist pattern by a developing nozzle equipped with an ink jet type mechanism. 4.
請求項４に記載される本発明による現像方法は、
前記追加現像処理は追加現像処理が行われた後に純水を吐出して追加現像の反応を抑止させ、所望の寸法を得ることを特徴とする請求項１〜３のいずれかに記載の現像方法である。
The developing method according to the present invention described in claim 4 is:
Development according to the additional development process by inhibiting the reaction of the additional additional development process by ejecting pure water after performing development, any one of the preceding claims, characterized in that to obtain the desired size Is the method.
請求項５に記載の本発明は、
請求項１から４のいずれかに記載の現像方法を用いて、マスク基板を現像することを特徴とする現像装置である。
The present invention according to claim 5 provides:
A developing device for developing a mask substrate using the developing method according to claim 1.
本発明の現像方法及び現像装置は、前記のインクジェット方式機構を搭載した現像ノズルを有し、前記の追加現像方法により、現像ローディングによって生じたマスク基板面内の寸法差を低減し均一にすることができるという効果を有する。また、通常の現像工程後に適用している点から、適切なフィードバックが可能であり、且つ局所的な追加現像処理を行ったとしても、欠陥の原因となり得るレジスト溶解物は通常現像工程時の段階で大幅に消費されていることから、マスクの欠陥品質を低下させることなく、現像ローディングによって生じた寸法差を低減することができる。 The developing method and the developing apparatus of the present invention have a developing nozzle equipped with the ink jet system mechanism, and reduce and make uniform the dimensional difference in the mask substrate surface caused by the developing loading by the additional developing method. Has the effect of being able to. In addition, from the point of application after the normal development process, appropriate feedback is possible, and even if a local additional development process is performed, the resist solution that can cause defects is the stage during the normal development process. Therefore, the dimensional difference caused by the development loading can be reduced without deteriorating the defect quality of the mask.
以下、本発明に係る実施形態について、図面を参照しながら説明する。
まず、従来の現像方法について説明する。図１（ａ）〜（ｃ）は、従来の現像方法であるパドル現像方法を示している。図１（ａ）に示すように、現像ノズル５１はマスク現像処理用チャック５３上の、ガラス基板１１をレジスト３１で覆ったマスク基板１０１上の端に位置しており、図１（ｂ）に示すように端からマスク基板を横切るように移動することで、マスク基板１０１のレジスト３１上に現像液６１を盛って現像を行い、図１（ｃ）に示すような所望のレジストパターン３１ａを得る方法である。尚、符号２１は遮光膜である。
Hereinafter, embodiments according to the present invention will be described with reference to the drawings.
First, a conventional developing method will be described. 1A to 1C show a paddle developing method which is a conventional developing method. As shown in FIG. 1A, the developing nozzle 51 is located on the mask developing processing chuck 53 at the end on the mask substrate 101 in which the glass substrate 11 is covered with the resist 31, and in FIG. As shown, the developer 61 is moved on the resist 31 of the mask substrate 101 by moving across the mask substrate from the end, and development is performed, thereby obtaining a desired resist pattern 31a as shown in FIG. Is the method. Reference numeral 21 denotes a light shielding film.
次いで、本発明のフィードバック方法について図２のフロー図を用いて説明する。まず、上記従来の通常現像処理（Ｓ１）により得た現像後のレジスト寸法を測定する（Ｓ２）。その寸法測定の結果と実パターン面積密度に現像ローディングの影響距離が加味されたレジストパターン領域に対して、追加現像処理（Ｓ３）を行う。そして、追加現像後のレジスト寸法を測定し（Ｓ４）、現像ローディング成分が低減するまで繰り返しフィードバック成分計算（Ｓ５）が行われる。 Next, the feedback method of the present invention will be described with reference to the flowchart of FIG. First, the resist dimensions after development obtained by the conventional normal development process (S1) are measured (S2). An additional development process (S3) is performed on the resist pattern region in which the effect of development loading is added to the result of the dimension measurement and the actual pattern area density. Then, the resist dimension after the additional development is measured (S4), and the feedback component calculation (S5) is repeatedly performed until the development loading component is reduced.
次いで、本発明のフィードバック計算方法について説明する。図３に示す実パターン１０５に対して、パターンの面積密度を計算する。図３に示すパターンはそのパターン面積密度がＸ軸方向に０％（符号９１）→５０％（符号９２）→１００％（符号９３）のパターンを示しており、また符号１０７はメインパターンである。ここで本発明では面積密度が変化する境界部９４及び９５では境界部以外の領域と現像条件を変えて行う。 Next, the feedback calculation method of the present invention will be described. The area density of the pattern is calculated for the actual pattern 105 shown in FIG. The pattern shown in FIG. 3 has a pattern area density of 0% (reference numeral 91) → 50% (reference numeral 92) → 100% (reference numeral 93) in the X-axis direction, and reference numeral 107 is a main pattern. . Here, in the present invention, the boundary portions 94 and 95 where the area density changes are performed by changing the region other than the boundary portion and the development conditions.
さらに、現像ローディングの影響距離を加味して、その影響距離を１グリッドとして図４に示すような面積密度マップを作成する（図４では面積密度を０〜２０％、２０〜４０％、４０〜６０％、６０〜８０％、８０〜１００％の区切りで作成したマップを示す）。図４に示すマップは面積率が変化する境界におけるパターンの面積密度の変化の様子を２次元的に示す模式図である。続いてパターンの面積密度がそのマップのパターン面積密度に基づいて、図５に示すようにマスク面内の所望の領域における追加現像処理の積算現像回数を決定する。尚、現像ローディングの影響距離については、あらかじめ基礎データとして図６に示すような寸法測定箇所対寸法変化量のデータを取得しておき、この影響距離より小さい範囲内でグリッド単位を定義し面積密度マップを作成する。尚、符号８０は現像ローディングの成分の影響距離を示す。即ち符号８０の部分はパターン面積が０％と５０％の境界部において現像を同一処理で行った場合に寸法の変化が生じてしまうことを示している。本発明は、このパターン面積が変化する境界部とパターン面積５０％の部分の寸法の変化量をなくすことである。 Further, an area density map as shown in FIG. 4 is created by taking the influence distance of development loading into account and taking the influence distance as one grid (in FIG. 4, the area density is 0 to 20%, 20 to 40%, 40 to 40). (Shows maps created at 60%, 60-80%, 80-100% breaks). The map shown in FIG. 4 is a schematic diagram showing two-dimensionally how the area density of the pattern changes at the boundary where the area ratio changes. Subsequently, the area density of the pattern is determined based on the pattern area density of the map, as shown in FIG. 5, to determine the cumulative development number of additional development processing in a desired region in the mask surface. As for the influence distance of development loading, data of dimension measurement location vs. dimensional change amount as shown in FIG. 6 is acquired as basic data in advance, and the grid unit is defined within a range smaller than this influence distance, and the area density Create a map. Reference numeral 80 indicates the influence distance of the component of development loading. That is, the reference numeral 80 indicates that the dimensional change occurs when the development is performed in the same process at the boundary between the pattern areas of 0% and 50%. An object of the present invention is to eliminate the amount of change in the dimensions of the boundary portion where the pattern area changes and the portion where the pattern area is 50%.
次に、本発明の現像装置構成について説明する。図７（ａ）、（ｂ）は従来の現像装置及び現像方法を示す図で、図８（ｃ）、（ｄ）は、本発明の現像装置構成と現像方法を説明するための図である。図７（ａ）に示すように、マスク現像処理用チャック５３上の、ガラス基板１１をレジスト３１で覆ったマスク基板１０１上の端に現像ノズル５１が位置しており、図７（ｂ）に示すように基板１０１の端から矢印９６で示す方向にマスク基板を横切るように移動することで、マスク基板１０１のレジスト３１上に現像液６１を盛って現像処理を行う。図７（ａ）、（ｂ）に示される現像装置には、従来の現像装置であるパドル現像装置を用いることが出来る。 Next, the configuration of the developing device of the present invention will be described. 7A and 7B are diagrams showing a conventional developing device and a developing method, and FIGS. 8C and 8D are diagrams for explaining the developing device configuration and the developing method of the present invention. . As shown in FIG. 7A, the developing nozzle 51 is located on the edge of the mask substrate 101 where the glass substrate 11 is covered with the resist 31 on the mask developing processing chuck 53, and FIG. As shown in the figure, the developing solution 61 is deposited on the resist 31 of the mask substrate 101 to perform development processing by moving from the end of the substrate 101 in the direction indicated by the arrow 96 across the mask substrate. As the developing device shown in FIGS. 7A and 7B, a paddle developing device which is a conventional developing device can be used.
その後、上記フィードバック方法に基づき、図８（ａ）、（ｂ）に示す現像装置及び現像方法によって、現像ノズル５２から所望の領域に対し追加現像処理を行う。本発明では、現像ノズル５２はインクジェット方式機構を搭載した現像ノズルであって、図８（ａ）に示すようにマスク現像処理用チャック５３上のガラス基板１１上に形成されたレジストパターン３１ｂで覆ったマスク基板１０１上の端にインクジェット方式機構を搭載した現像ノズル５２が位置しており、図８（ｂ）に示すように矢印９７で示す方向に移動する。この場合現像ノズルにインクジェット方式機構を搭載したノズルを用いることによって、マスク基板１０１のレジストパターン３１ｂ上に現像液６２を少量供給することが出来、過剰な現像処理を行わないようにすることが可能となる。 Thereafter, based on the feedback method, an additional development process is performed on a desired region from the development nozzle 52 by the development device and the development method shown in FIGS. In the present invention, the developing nozzle 52 is a developing nozzle equipped with an inkjet mechanism, and is covered with a resist pattern 31b formed on the glass substrate 11 on the mask developing chuck 53 as shown in FIG. A developing nozzle 52 equipped with an ink jet type mechanism is located at the end of the mask substrate 101 and moves in the direction indicated by an arrow 97 as shown in FIG. In this case, a small amount of the developer 62 can be supplied onto the resist pattern 31b of the mask substrate 101 by using a nozzle equipped with an ink jet system mechanism as a developing nozzle, so that excessive development processing can be prevented. It becomes.
追加現像処理が完了したら、通常通り純水リンス及び回転乾燥処理を行い、再度レジスト寸法測定を行う。この追加現像処理による現像ローディング成分の補正が不足していた場合は、再度繰り返しフィードバック及び追加現像処理を行う。 When the additional development processing is completed, pure water rinsing and rotary drying are performed as usual, and the resist dimensions are measured again. If correction of the development loading component by this additional development processing is insufficient, feedback and additional development processing are repeated again.
以上より、図９（ａ）に示すパターン３１ｃの密部の出来上がり寸法７０と、図９（ｂ）に示すパターン３１ｄの疎部の出来上がり寸法７１の誤差をなくすことができる。且つ、現像液に溶けたレジスト溶解物によって引き起こされる欠陥の増加についても本方法により抑制できる。 As described above, it is possible to eliminate an error between the finished size 70 of the dense portion of the pattern 31c shown in FIG. 9A and the finished size 71 of the sparse portion of the pattern 31d shown in FIG. 9B. In addition, an increase in defects caused by the dissolved resist dissolved in the developer can also be suppressed by this method.
以下、本発明の現像装置及び現像方法の実施例を説明する。はじめにＣｒ（クロム）遮光膜付き６インチＱｚ（クオーツ）基板を準備し、この基板に化学増幅型ポジレジストを１５０ｎｍ膜厚にて塗布した。 Examples of the developing device and the developing method of the present invention will be described below. First, a 6-inch Qz (quartz) substrate with a Cr (chrome) light-shielding film was prepared, and a chemically amplified positive resist was applied to the substrate with a thickness of 150 nm.
次に、電子線描画機にて図１０に示す実パターン１１５を前記準備したレジスト塗布済み基板に描画した。パターンＡには１０００ｎｍのラインアンドスペースパターンを用いた。パターン密度は、０％と５０％になるように１０００ｎｍのラインアンドスペースパターンを用いた。 Next, an actual pattern 115 shown in FIG. 10 was drawn on the prepared resist-coated substrate with an electron beam drawing machine. As the pattern A, a 1000 nm line and space pattern was used. A 1000 nm line and space pattern was used so that the pattern density was 0% and 50%.
次に、描画後の基板に対しＰＥＢ処理（Ｐｏｓｔ Ｅｘｐｏｓｕｒｅ Ｂａｋｅ：露光後に行うベーキング処理）及び通常の（従来の）現像処理を行い、レジストパターンを形成する。そして、現像処理後のレジストパターンＡの寸法測定を走査型電子顕微鏡にて５０００倍の倍率により１ｍｍ間隔で測定した。寸法測定結果を図１１（この結果を比較例とする）に示す。 Next, a PEB process (Post Exposure Bake: baking process after exposure) and a normal (conventional) development process are performed on the substrate after drawing to form a resist pattern. And the dimension measurement of the resist pattern A after a development process was measured at 1 mm intervals with a magnification of 5000 times with a scanning electron microscope. The dimension measurement result is shown in FIG. 11 (this result is used as a comparative example).
次いで、図１０に示すパターンの面積密度を現像ローディングの影響距離から図１２に示すようなパターン面積密度分布マップを作成する。さらに、図１３に示すような各パターン面積密度領域に対する現像処理回数を設定する。以上より、パターン面積密度に対する現像処理回数を導出し、追加現像処理を行う。 Next, a pattern area density distribution map as shown in FIG. 12 is created from the area density of the pattern shown in FIG. 10 from the influence distance of development loading. Further, the number of development processes for each pattern area density region as shown in FIG. 13 is set. As described above, the number of times of development processing with respect to the pattern area density is derived, and additional development processing is performed.
追加現像処理後の寸法測定の結果、図１４の追加現像後１に示すように５０％密度部に発生していた現像ローディング成分が低減していることが確認できた。しかし、０％密度部との差がまだ見られているため、追加現像処理を再度行った。その結果、図１４の追加現像後２に示すように５０％密度部の寸法が０％密度部とほぼ同等になり、現像ローディング成分が低減できていることを確認した。 As a result of the dimension measurement after the additional development processing, it was confirmed that the development loading component generated in the 50% density portion was reduced as shown in 1 after the additional development in FIG. However, since the difference from the 0% density portion is still seen, the additional development processing was performed again. As a result, as shown in 2 after additional development in FIG. 14, the size of the 50% density portion was almost the same as that of the 0% density portion, and it was confirmed that the development loading component was reduced.
また本実施例においては、図１５（ａ）に示すように所望のパターン面積密度領域にインクジェット方式機構を搭載した現像ノズル５２によって現像液滴１３２を吐出し、レジスト３１上に現像液１３１を塗付し所望の現像時間が経過した後に、図１５（ｂ）に示すように追加現像と同様の方法でインクジェット方式機構を搭載した現像ノズル５２で純水液滴１３４を吐出して純水１３３を塗付し現像液を希釈（希釈された現像液を符号１３５で示す）することで、現像による反応を制御し、所望の寸法が得られた。 Further, in this embodiment, as shown in FIG. 15A, developer droplets 132 are ejected by a developing nozzle 52 equipped with an inkjet mechanism in a desired pattern area density region, and a developer 131 is applied onto the resist 31. Then, after a desired development time has elapsed, as shown in FIG. 15B, pure water droplets 134 are ejected by a developing nozzle 52 equipped with an ink jet system mechanism in the same manner as in the additional development, and pure water 133 is produced. By applying and diluting the developer (diluted developer is denoted by reference numeral 135), the reaction by development was controlled, and the desired dimensions were obtained.
以上のように本発明の現像方法及び現像装置によれば、フォトマスク製造における現像工程のレジストパターン形成時に発生する現像ローディングの影響を低減することが出来、マスク面内の寸法誤差を低減することが出来る。 As described above, according to the development method and the development apparatus of the present invention, it is possible to reduce the influence of development loading that occurs when forming a resist pattern in the development process in photomask manufacturing, and to reduce the dimensional error in the mask surface. I can do it.
１１・・・ガラス基板
２１・・・遮光膜
３１・・・レジスト
３１ａ、３１ｂ、３１ｃ・・・現像処理によって得られたレジストパターン
３２・・・露光部
３３・・・レジスト溶解物
５１・・・現像ノズル
５２・・・インクジェット方式搭載型現像ノズル
５３・・・マスク現像処理用チャック
６１・・・現像液
６２・・・現像液滴
７０・・・実レジストパターン
８０・・・現像ローディング成分の影響距離
８１・・・現像液滴
９１・・・面積密度が０％のパターン
９２・・・面積密度が５０％のパターン
９３・・・面積密度が１００％のパターン
９４・・・面積密度が変化する境界部
９５・・・面積密度が変化する境界部
９６・・・現像ノズルの移動方向
９７・・・現像ノズル（インクジェット機構のノズル）の移動方向
１０１・・・実パターンマスク基板
１０５・・・実パターン
１０６・・・パターン面積密度マップ
１０７・・・メインパターン
１１５・・・実施例１の実パターン
１１６・・・実施例１の実パターン面積密度マップ
１２０・・・実施例１の現像ローディング成分の改善
１３１・・・実施例１の現像液
１３２・・・実施例１の現像液滴
１３３・・・実施例１の純水
１３４・・・実施例１の純水液滴
１３５・・・実施例１の純水により希釈された現像液
DESCRIPTION OF SYMBOLS 11 ... Glass substrate 21 ... Light-shielding film 31 ... Resist 31a, 31b, 31c ... Resist pattern 32 obtained by development processing ... Exposure part 33 ... Resist melt 51 ... Developing nozzle 52... Ink jet type developing nozzle 53... Mask developing treatment chuck 61... Developer 62... Developing droplet 70. Distance 81 ... Development droplet 91 ... Pattern 92 with area density 0% ... Pattern 93 with area density 50% ... Pattern 94 with area density 100% ... Area density changes Boundary portion 95... Boundary portion 96 where the area density changes... Development nozzle movement direction 97... Development nozzle (inkjet mechanism nozzle) movement direction 101. Mask substrate 105 ... Actual pattern 106 ... Pattern area density map 107 ... Main pattern 115 ... Actual pattern 116 of Example 1 ... Actual pattern area density map 120 of Example 1 ... Implementation Improvement of developing loading component in Example 1 131 Developer 132 in Example 1 Developing droplet 133 in Example 1 Pure water 134 in Example 1 Pure water in Example 1 Drop 135... Developer diluted with pure water of Example 1
Claims (5)
現像後のレジストパターンの寸法測定を行い、
前記寸法測定の結果と実パターン面積密度に現像ローディングの影響距離が加味されたレジストパターンの領域に対して、追加現像処理を１回以上行い、
現像ローディングを低減してマスク基板の面内寸法誤差を低減することを特徴とする現像方法。 In a developing method for developing a resist pattern formed on a substrate,
Measure the dimensions of the resist pattern after development,
Additional development processing is performed at least once for the region of the resist pattern in which the influence distance of development loading is added to the result of the dimension measurement and the actual pattern area density,
A developing method comprising reducing development loading to reduce an in-plane dimensional error of a mask substrate.
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| JPH0263049A (en) * | 1988-08-30 | 1990-03-02 | Dainippon Printing Co Ltd | Substrate with mask pattern and its manufacture |
| JPH09218500A (en) * | 1996-02-14 | 1997-08-19 | Dainippon Printing Co Ltd | Manufacture of resist patterns |
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