JP6231241B2 - Flow measuring device - Google Patents

Flow measuring device Download PDF

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JP6231241B2
JP6231241B2 JP2017140538A JP2017140538A JP6231241B2 JP 6231241 B2 JP6231241 B2 JP 6231241B2 JP 2017140538 A JP2017140538 A JP 2017140538A JP 2017140538 A JP2017140538 A JP 2017140538A JP 6231241 B2 JP6231241 B2 JP 6231241B2
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protective film
organic protective
pad
heating resistor
sealing material
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JP2017187512A (en
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保夫 小野瀬
保夫 小野瀬
中野 洋
洋 中野
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Hitachi Astemo Ltd
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Hitachi Automotive Systems Ltd
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本発明は、流体の流量を測定する流量測定装置に係り、特に、内燃機関の空気流量を測定する流量測定装置に関する。   The present invention relates to a flow rate measuring device that measures a flow rate of a fluid, and more particularly to a flow rate measuring device that measures an air flow rate of an internal combustion engine.

本技術分野の背景技術として、特開2001−12987号公報(特許文献1)がある
。特許文献1には、積層基板に窪みを設けそこに半導体センサ素子を配置する構造では段差ができないため、印刷法で所定の位置に再現性よく樹脂封止膜を形成することが可能である。と記載されている。特に、センサ自身が小さい半導体センサ素子では、センサ近傍に形成された樹脂封止膜の形状がばらつくと、それが直接出力特性のばらつきに繋がるため重要である。このような構造をとることにより、精度向上や高信頼性の熱式空気流量センサを提供できるとしている。
As a background art in this technical field, there is JP-A-2001-12987 (Patent Document 1). In Patent Document 1, since a step is not formed in a structure in which a depression is provided in a laminated substrate and a semiconductor sensor element is disposed there, a resin sealing film can be formed at a predetermined position with high reproducibility by a printing method. It is described. In particular, in a semiconductor sensor element having a small sensor itself, if the shape of the resin sealing film formed in the vicinity of the sensor varies, it is important because it directly leads to variations in output characteristics. By adopting such a structure, it is said that a thermal air flow sensor with improved accuracy and high reliability can be provided.

特開2001−12987号公報Japanese Patent Laid-Open No. 2001-12987

半導体センサ素子は、空気通路中にむき出しに配置されるため、腐食性ガスやガソリン、エジンオイル等に直接さらされる環境下におかれる。そのため、ボンディングパッドおよび、接続ワイヤをシール材で腐食から保護する必要がある。シール材の形状がばらつくとそれ自体が直接出力特性のばらつきとなるため、形状、位置を高精度に決める必要がある。特許文献1によれば、積層基板の窪みに半導体センサ素子を配置することでシール材に相当する樹脂封止膜所定の位置に再現性よく形成することが可能とある。しかし、一般的にシール材として用いられるエポキシ樹脂、フッ素樹脂、ゲル等は、熱硬化を必要とする。例えば、エポキシ樹脂の粘度の温度依存性を見ると、硬化シーケンス中に粘度が大きく低下することが知られている。このため、位置決めを精度良く行っても、シール材が流動してしまい、結果として意図した位置、形状が得られず流量測定装置の特性のばらつきを低減するのが困難であった。       Since the semiconductor sensor element is exposed in the air passage, the semiconductor sensor element is placed in an environment where it is directly exposed to corrosive gas, gasoline, engine oil, or the like. Therefore, it is necessary to protect the bonding pad and the connecting wire from corrosion with a sealing material. If the shape of the sealing material varies, it itself causes variations in output characteristics, so it is necessary to determine the shape and position with high accuracy. According to Patent Literature 1, it is possible to form a resin sealing film corresponding to a sealing material at a predetermined position with good reproducibility by disposing a semiconductor sensor element in a depression of a laminated substrate. However, epoxy resins, fluororesins, gels and the like that are generally used as sealing materials require thermosetting. For example, looking at the temperature dependence of the viscosity of the epoxy resin, it is known that the viscosity is greatly reduced during the curing sequence. For this reason, even if positioning is performed with high accuracy, the sealing material flows, and as a result, the intended position and shape cannot be obtained, and it is difficult to reduce variations in the characteristics of the flow rate measuring device.

本発明の目的は、特性ばらつきの少ない高精度の流量測定装置を提供することである。       An object of the present invention is to provide a highly accurate flow rate measuring apparatus with little characteristic variation.

上記課題を解決するために、例えば特許請求の範囲に記載の構成を採用する。   In order to solve the above problems, for example, the configuration described in the claims is adopted.

本願は上記課題を解決する手段を複数含んでいるが、その一例を挙げるならば、前記有機保護膜は、前記ダイアフラムと前記パッドとの間に、前記有機保護膜を形成しない領域を設けることにより、前記ダイアフラム側に形成される第一の有機保護膜と、前記パッド側に形成される第二の有機保護膜とに分離されており、前記第一の有機保護膜の前記パッド側の端部は、前記発熱抵抗体から所定の距離離れており、前記シール材の発熱抵抗体側の端部は、前記第一の有機保護膜の前記パッド側の端部から、前記第二の有機保護膜の前記パッド側の端部の間にある。   The present application includes a plurality of means for solving the above-described problems. For example, the organic protective film is formed by providing a region in which the organic protective film is not formed between the diaphragm and the pad. , Separated into a first organic protective film formed on the diaphragm side and a second organic protective film formed on the pad side, and an end of the first organic protective film on the pad side Is a predetermined distance away from the heating resistor, and the end of the sealing material on the side of the heating resistor is the end of the second organic protective film from the end of the first organic protective film on the pad side. Between the pad side ends.

本発明によれば、特性ばらつきの少ない高精度の流量測定装置を提供できる。   According to the present invention, it is possible to provide a highly accurate flow rate measuring device with little characteristic variation.

本発明による流量測定装置の実装基板の断面図の例である。It is an example of sectional drawing of the mounting board | substrate of the flow measuring device by this invention. 本発明による流量測定装置の流量検出素子の平面図の例である。It is an example of the top view of the flow volume detection element of the flow volume measuring apparatus by this invention. 本発明の流量検出素子の断面図の他の実施例である。It is another Example of sectional drawing of the flow volume detection element of this invention. 本発明の流量検出素子の断面図の他の実施例である。It is another Example of sectional drawing of the flow volume detection element of this invention. 本発明の流量検出素子の断面図の他の実施例である。It is another Example of sectional drawing of the flow volume detection element of this invention.

以下、発明を実施するための形態について図1乃至5を用いて説明する。   Hereinafter, embodiments for carrying out the invention will be described with reference to FIGS.

まず初めに本発明の一実施例である実施例1について説明する。   First, Embodiment 1 which is an embodiment of the present invention will be described.

図1に示されるように、実装基板101に窪み107が設けられ、ダイアフラム106上に設けられた発熱抵抗体を持つ流量検出素子108と制御回路素子104が実装されている。流量検出素子108の信号は、実装基板上配線部102に例えば、金ワイヤ105aで接続される。また、実装基板上配線102と制御回路素子104が例えば、金ワイヤ105bで接続されて信号処理を行い、出力信号としてパッド103から出力端子へ接続され出力される。   As shown in FIG. 1, a depression 107 is provided on the mounting substrate 101, and a flow rate detection element 108 and a control circuit element 104 having a heating resistor provided on a diaphragm 106 are mounted. The signal of the flow rate detection element 108 is connected to the wiring part 102 on the mounting substrate by, for example, a gold wire 105a. Further, the wiring 102 on the mounting substrate and the control circuit element 104 are connected by, for example, a gold wire 105b to perform signal processing, and are output from the pad 103 to the output terminal as an output signal.

流量検出素子実装部Aは、外部に直接さらされるため、腐食性ガスやガソリン、エンジンオイル等からアルミパッド部や金ワイヤ105aを保護する必要がある。本実施例では
、シール材110をポッティング塗布し、アルミパッド部および金ワイヤ105aを保護している。このような実装構成の場合、シール材110の位置、形状が重要となる。
Since the flow rate detecting element mounting portion A is directly exposed to the outside, it is necessary to protect the aluminum pad portion and the gold wire 105a from corrosive gas, gasoline, engine oil, and the like. In this embodiment, the sealing material 110 is potted to protect the aluminum pad portion and the gold wire 105a. In the case of such a mounting configuration, the position and shape of the sealing material 110 are important.

流量検出素子108とシール材110の線膨張係数の違いによる応力や、シール材110の残留応力によって、抵抗値が変化するためである。線膨張係数の違いによる応力この影響は、温度特性に現れる。例えば、常温で、出力特性を調整しても、周囲温度変化によって流量検出素子108にかかる応力が変わるため特性が変化する。   This is because the resistance value varies depending on the stress due to the difference in linear expansion coefficient between the flow rate detection element 108 and the sealing material 110 and the residual stress of the sealing material 110. Stress due to difference in linear expansion coefficient This effect appears in the temperature characteristics. For example, even if the output characteristics are adjusted at room temperature, the characteristics change because the stress applied to the flow rate detection element 108 changes due to a change in the ambient temperature.

また、シール材110の残留応力の影響は、耐久特性変化として現れる。高温環境や、熱サイクルによって、シール材110物性値が変動し、特性が変化する。これらの影響は
、当然ながら、シール材110が発熱抵抗体106に近いほど大きくなる。従って、シール材110とダイアフラム106上に設けられた発熱抵抗体201は一定の距離を保つ必要がある。
Moreover, the influence of the residual stress of the sealing material 110 appears as a change in durability characteristics. The physical property value of the sealing material 110 varies depending on the high temperature environment and the thermal cycle, and the characteristics change. Naturally, these effects become larger as the sealing material 110 is closer to the heating resistor 106. Therefore, the heating resistor 201 provided on the sealing material 110 and the diaphragm 106 needs to maintain a certain distance.

ところが、シール材110が熱硬化中に粘度が低下し、精度良くシール材110を塗布しても、硬化シーケンス中に形状が変化し、ダイアフラム106上に設けられた発熱抵抗体との距離がばらつき、距離を保てなく場合が発生する問題がある。   However, the viscosity of the sealing material 110 decreases during thermal curing, and even when the sealing material 110 is applied with high accuracy, the shape changes during the curing sequence and the distance from the heating resistor provided on the diaphragm 106 varies. If you cannot keep the distance, there is a problem that occurs.

図2に流量検出素子108の平面図を示す。ダイアフラム106には、発熱抵抗体201(詳細パターンは図示していない)が形成されており、引き出し線202とアルミパッド203に接続されている(配線パターンは図示していない)。本実施例では、発熱抵抗
体106から一定の距離に、撥水性有機膜109を設けている。撥水性有機膜109によって、硬化シーケンス中にシール材110の粘度低下による形状変化が発生しても、発熱抵抗体201側に流れることがなくなり、特性変化を防ぐことができる。そのため、撥水性有機膜109はシール材110が塗布される近傍に設けられている。
FIG. 2 shows a plan view of the flow rate detecting element 108. A heating resistor 201 (detail pattern is not shown) is formed on the diaphragm 106, and is connected to the lead wire 202 and the aluminum pad 203 (wiring pattern is not shown). In this embodiment, the water repellent organic film 109 is provided at a certain distance from the heating resistor 106. With the water repellent organic film 109, even if a shape change due to a decrease in the viscosity of the sealing material 110 occurs during the curing sequence, the water repellent organic film 109 does not flow toward the heating resistor 201 and can prevent characteristic changes. Therefore, the water repellent organic film 109 is provided in the vicinity where the sealing material 110 is applied.

また、撥水性有機膜109として、ポリイミドシリコーンを用いれば、通常、半導体製造プロセスで保護膜として使用されている材料であり、流量検出素子108製造時に同時に形成することができ、低コスト化を図れる。   Further, if polyimide silicone is used as the water-repellent organic film 109, it is a material usually used as a protective film in the semiconductor manufacturing process, and can be formed at the same time as the flow rate detecting element 108 is manufactured, thereby reducing the cost. .

図3は、実施例2における流量測定装置の流量検出素子108の平面図を示す。本実施例では、シール材が塗布される領域以外に撥水性有機膜109を形成している。これによって、流量検出素子108に衝突するダストから、流量検出素子108を保護することができ、耐ダスト耐性が向上する。   FIG. 3 is a plan view of the flow rate detecting element 108 of the flow rate measuring device according to the second embodiment. In this embodiment, the water repellent organic film 109 is formed in a region other than the region where the sealing material is applied. Thereby, the flow rate detecting element 108 can be protected from dust colliding with the flow rate detecting element 108, and the dust resistance is improved.

図4は、実施例3における流量測定装置の流量検出素子108の平面図を示す。本実施例では、シール材が塗布される領域および、ダイアフラム106内の発熱抵抗体201以外に撥水性有機膜109bを形成している。ダイアフラム106内の発熱抵抗体201上には撥水性有機膜を形成していないため、熱伝達の悪化による感度低下が起こらず、ダイアフラム106内の発熱抵抗体201以外のダストによる表面の損傷を防止することができる。   FIG. 4 is a plan view of the flow rate detecting element 108 of the flow rate measuring device according to the third embodiment. In this embodiment, the water-repellent organic film 109 b is formed in addition to the region where the sealing material is applied and the heating resistor 201 in the diaphragm 106. Since the water repellent organic film is not formed on the heating resistor 201 in the diaphragm 106, the sensitivity is not lowered due to the deterioration of heat transfer, and the surface damage due to dust other than the heating resistor 201 in the diaphragm 106 is prevented. can do.

また、撥水性有機膜109aを撥水性有機膜109bと分離して形成している。これによって、製造工程中に、シール材端部の位置検出が容易になる。例えば、シール材で覆う必要がある位置が、撥水性有機膜109の下端部(アルミパッド202側)であり、シール材と発熱抵抗体201の必要距離が撥水性有機膜109の下端部(アルミパッド202側)の位置とすれば、シール材端部位置は、撥水性有機膜109aの下端部から撥水性有機膜109bの下端部の領域にあればよく、自動検査でパターン検出が可能になる。 Further, the water repellent organic film 109a is formed separately from the water repellent organic film 109b. This facilitates position detection of the seal material end during the manufacturing process. For example, it is necessary to cover a sealing material position is, the lower end of the water-repellent organic film 109 a is (aluminum pads 202 side), the lower end portion of the required distance between the sealant heating resistor 201 is water-repellent organic film 109 b If the position is on the (aluminum pad 202 side), the end position of the sealing material only needs to be in the region from the lower end of the water repellent organic film 109a to the lower end of the water repellent organic film 109b, and pattern detection can be performed by automatic inspection. become.

本実施例では、撥水性有機膜は、2つに分離した例を示したが、必要であれば2つ以上に分離しても良い。図5に示すように中抜きパターンとしても良い。これにより、パターンが分離されていないので、膜の剥がれが起こり難くなる。   In the present embodiment, an example in which the water-repellent organic film is separated into two is shown, but it may be separated into two or more if necessary. A hollow pattern may be used as shown in FIG. Thereby, since the patterns are not separated, the film is hardly peeled off.

101…実装基板
102…実装基板上配線
104…制御回路素子
105a,b…金ワイヤ
106…ダイアフラム
107…窪み
108…流量検出素子
109、109a、109b…撥水性有機膜
201…発熱抵抗体
202…引き出し線
203…アルミパッド
DESCRIPTION OF SYMBOLS 101 ... Mounting board 102 ... Wiring on mounting board 104 ... Control circuit element 105a, b ... Gold wire 106 ... Diaphragm 107 ... Indentation 108 ... Flow rate detection element 109, 109a, 109b ... Water-repellent organic film 201 ... Heating resistor 202 ... Drawer Line 203 ... Aluminum pad

Claims (5)

ダイアフラムに設けられた発熱抵抗体と、
金属製のワイヤによって外部と電気的に接続するためのパッドと、
該パッドと該発熱抵抗体とを電気的に接続する配線と、を有する半導体センサ素子であって、
前記半導体センサ素子は、
前記発熱抵抗体が形成される側の表面であって、前記ダイアフラムと前記パッドとの間に、少なくとも第一の有機保護膜と第二の有機保護膜とを有しており、
前記第一の有機保護膜と前記第二の有機保護膜は、有機保護膜が形成されない領域によって分離されており、
前記第一の有機保護膜は、前記有機保護膜が形成されない領域より前記ダイアフラム側に形成され、
前記第二の有機保護膜は、前記有機保護膜が形成されない領域より前記パッド側に形成され、
前記第一の有機保護膜の前記パッド側の端部は、前記発熱抵抗体から所定の距離離れており、
前記シール材の端部は、前記第一の有機保護膜の前記パッド側の端部から、前記第二の有機保護膜の前記パッド側の端部の間にある半導体センサ素子。
A heating resistor provided on the diaphragm;
Pads for electrical connection with the outside by metal wires;
A semiconductor sensor element comprising: a wiring for electrically connecting the pad and the heating resistor;
The semiconductor sensor element is:
It is a surface on the side where the heating resistor is formed, and has at least a first organic protective film and a second organic protective film between the diaphragm and the pad,
The first organic protective film and the second organic protective film are separated by a region where the organic protective film is not formed,
The first organic protective film is formed on the diaphragm side from a region where the organic protective film is not formed,
The second organic protective film is formed on the pad side from a region where the organic protective film is not formed,
The pad-side end of the first organic protective film is separated from the heating resistor by a predetermined distance,
The end of the sealing material is a semiconductor sensor element located between the pad-side end of the first organic protective film and the pad-side end of the second organic protective film.
前記第一の有機保護膜は、前記発熱抵抗体にかからない請求項1に記載の半導体センサ素子。   The semiconductor sensor element according to claim 1, wherein the first organic protective film does not cover the heating resistor. 前記第一の有機保護膜は、前記ダイアフラムの端部を覆う請求項2に記載の半導体センサ素子。   The semiconductor sensor element according to claim 2, wherein the first organic protective film covers an end portion of the diaphragm. 前記第一の有機保護膜または前記第二の有機保護膜は、ポリイミドシリコーンである請求項2または3に記載の半導体センサ素子。   The semiconductor sensor element according to claim 2, wherein the first organic protective film or the second organic protective film is polyimide silicone. 前記パッドおよび前記ワイヤはシール材によって保護される請求項1ないし4に記載の半導体センサ素子。   The semiconductor sensor element according to claim 1, wherein the pad and the wire are protected by a sealing material.
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JP2784286B2 (en) * 1991-12-09 1998-08-06 三菱電機株式会社 Method for manufacturing semiconductor sensor device
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