JP6230986B2 - Plasma processing equipment - Google Patents

Description

  Various aspects and embodiments of the present invention relate to a plasma processing apparatus.

  Conventionally, a plasma CVD (Chemical Vapor Deposition) method is known as a method for forming a thin film on a substrate. A plasma processing apparatus (hereinafter referred to as “plasma CVD apparatus”) using a plasma CVD method generates, for example, plasma of a processing gas using high-frequency power and reacts active species in the plasma to form a reaction film on a substrate. Is deposited.

  By the way, in the plasma CVD apparatus, unnecessary active species are generated due to excessive radical reaction in the plasma. Therefore, in order to suppress the generation of unnecessary active species, a plurality of spaces having different plasma densities in the processing vessel are used. Techniques for forming are known. For example, the electrode is passed through the through hole of the ground plate attached in the processing container, and a space having a relatively high plasma density is formed between the outer peripheral surface of the electrode and the inner peripheral surface of the through hole. There is a technique for forming a space having a relatively low plasma density between the tip and a susceptor in the processing container.

International Publication No. 2013/136656

  However, the prior art does not take into account the appropriate control of the plasma density for each type of processing gas without any structural limitations.

  In other words, in the prior art, the plasma density is controlled for each type of processing gas supplied to each space by adjusting the distance between the spaces in advance, so that the control of the plasma density may be structurally limited. .

  A plasma processing apparatus according to an aspect of the present invention is provided in a processing container, a mounting table provided inside the processing container, on which a substrate is mounted, and attached to the processing container so as to face the mounting table. A ground plate in which a plurality of through holes are formed; a plurality of gas supply pipes that are respectively inserted into the plurality of through holes of the ground board; and an outer peripheral surface of each of the plurality of gas supply pipes; A plurality of gas supply pipes for supplying a processing gas to a space formed between the inner peripheral surfaces of each of the through holes, and the plurality of gas supply pipes, and each of the plurality of gas supply pipes is classified by type. And a power supply member that converts the processing gas into plasma in the space by supplying different high-frequency power corresponding to the type of the processing gas to a gas supply pipe that supplies the processing gas with different space to the space.

  According to various aspects and embodiments of the present invention, a plasma processing apparatus capable of appropriately controlling the plasma density for each type of processing gas without being restricted in structure is realized.

FIG. 1 is a longitudinal sectional view showing the outline of the configuration of the plasma processing apparatus according to the first embodiment. FIG. 2 is a cross-sectional plan view of the ground plate shown in FIG. 3 is an enlarged cross-sectional view of the blocking member shown in FIG. 4 is an exploded perspective view of the power supply member shown in FIG. FIG. 5 is a longitudinal sectional view showing an outline of the configuration of the plasma processing apparatus according to the second embodiment. 6 is an enlarged plan view showing a part of the ground plate shown in FIG.

  In one embodiment, the disclosed plasma processing apparatus is provided with a processing container, a mounting table on which the substrate is mounted, a mounting table on which the substrate is mounted, and a plasma processing apparatus attached to the processing container so as to face the mounting table. A ground plate in which through holes are formed, and a plurality of gas supply pipes respectively inserted into the plurality of through holes of the ground plate, each outer peripheral surface of the plurality of gas supply pipes, and each of the plurality of through holes A plurality of gas supply pipes for supplying a processing gas to a space formed between the inner peripheral surface of the gas supply pipe and a plurality of gas supply pipes. A power supply member that converts the processing gas into plasma in a space by supplying different high-frequency power corresponding to the type of the processing gas to the gas supply pipe to be supplied.

  In one embodiment of the disclosed plasma processing apparatus, the power supply member supplies the same high-frequency power to the gas supply pipe that supplies the processing gas of the same type among the plurality of gas supply pipes to the space.

  In one embodiment of the disclosed plasma processing apparatus, the power supply member is a conductor pattern that supplies first high-frequency power to a gas supply pipe that supplies a first type of processing gas among a plurality of gas supply pipes. And a conductor pattern for supplying a second high-frequency power different from the first high-frequency power to a gas supply pipe for supplying a second type of processing gas among the plurality of gas supply pipes. And a second insulating layer stacked on the first insulating layer.

  In one embodiment of the disclosed plasma processing apparatus, the power supply member further includes an insulating film inserted between the first insulating layer and the second insulating layer, and the second insulating layer includes: And laminated on the first insulating layer via an insulating film.

  In one embodiment, the disclosed plasma processing apparatus blocks high-frequency power on a surface of the first insulating layer and the second insulating layer opposite to the surface on which the conductor pattern is formed. A shield layer is formed.

  In one embodiment of the disclosed plasma processing apparatus, the power supply member corresponds to the type of the processing gas with respect to the gas supply pipe that supplies the processing gas having a different type to the space among the plurality of gas supply pipes. Supply high frequency power with different frequency.

  In one embodiment, the disclosed plasma processing apparatus further includes a gas introduction member in which a buffer chamber for introducing a processing gas into each inlet of the plurality of gas supply pipes is formed. Are connected to the respective inlets of the plurality of gas supply pipes via a blocking member for blocking high-frequency power.

  In one embodiment of the disclosed plasma processing apparatus, the blocking member is formed of a material having higher resistance than each of the plurality of gas supply pipes.

  In addition, in one embodiment, the disclosed plasma processing apparatus further includes a cooling jacket provided on the outer peripheral surface of the gas introduction member and having a flow path for allowing a refrigerant to flow inside.

  Hereinafter, various embodiments will be described in detail with reference to the drawings. In the drawings, the same or corresponding parts are denoted by the same reference numerals.

(First embodiment)
FIG. 1 is a longitudinal sectional view showing the outline of the configuration of the plasma processing apparatus according to the first embodiment. FIG. 2 is a cross-sectional plan view of the ground plate shown in FIG.

  As shown in FIG. 1, the plasma processing apparatus 1 is connected to a processing container 10, a mounting table 2, a ground plate 32, a plurality of gas supply pipes 34, a gas introduction member 36, and an external high-frequency power source (not shown). The power supply member 38 is provided.

  The processing container 10 is a bottomed cylindrical chamber formed of a metal such as aluminum or stainless steel. The processing container 10 is grounded. An upper end portion of the side wall of the processing container 10 forms an opening.

  A gate valve 12 for opening and closing the loading / unloading port 11 for the substrate S is attached to the side wall of the processing container 10. An exhaust pipe 13 is provided on the side wall of the processing container 10. An exhaust device (not shown) is connected to the downstream side of the exhaust pipe 13. The exhaust device has a vacuum pump and depressurizes the inside of the processing container 10 to a predetermined degree of vacuum.

  A mounting table 2 is provided inside the processing container 10. On the mounting table 2, a substrate S to be deposited is placed. The transfer of the substrate S between the transfer mechanism outside the processing container 10 and the mounting table 2 is performed using the lift pins 22. The elevating pins 22 are configured to be movable up and down by an elevating mechanism 25 via an elevating plate 24. The periphery of the elevating pin 22 is covered with a bellows 23.

  A temperature adjusting unit 21 made of, for example, a resistance heating element is embedded in the mounting table 2. The temperature adjustment unit 21 generates heat by power supplied from a power supply unit (not shown), and can adjust the substrate S to a temperature of, for example, 200 ° C. to 300 ° C. via the upper surface of the mounting table 2. The temperature adjusting unit 21 is not limited to the one that heats the substrate S, and may be one that cools the substrate S and adjusts it to a predetermined temperature according to the process conditions. In this case, for example, a Peltier element or the like can be adopted as the temperature adjustment unit 21.

  The ground plate 32 is attached to the processing container 10 so as to face the mounting table 2. The opening at the upper end of the side wall of the processing container 10 is closed by the ground plate 32. The ground plate 32 is attached to the upper end part of the side wall of the processing container 10 through an O-ring, for example. The ground plate 32 is formed in a disc shape by a conductor such as metal. The ground plate 32 is grounded.

  An insulator 33 is provided on the surface of the ground plate 32 opposite to the surface facing the mounting table 2. The insulator 33 is made of alumina (Al 2 O 3), for example, and insulates the ground plate 32 and a member (for example, the power supply member 38) located above the ground plate 32.

  The ground plate 32 is formed with a plurality of through holes 32a as shown in FIGS. A plurality of gas supply pipes 34 are respectively inserted into the plurality of through holes 32a. A space 35 is formed between the outer peripheral surface of each of the plurality of gas supply pipes 34 and the inner peripheral surface of each of the plurality of through holes 32a.

  The plurality of gas supply pipes 34 extend from the gas introduction member 36 and are inserted into the plurality of through holes 32 a of the ground plate 32 while penetrating the power supply member 38 and the insulator 33. The plurality of gas supply pipes 34 supplies a processing gas to a space 35 formed between the outer peripheral surface of each of the plurality of gas supply pipes 34 and the inner peripheral surface of each of the plurality of through holes 32a. Specifically, each gas supply pipe 34 is a pipe whose tip is blocked, and is processed into a space 35 from a hole 34-1 formed in a pipe wall facing the inner peripheral surface of each of the plurality of through holes 32a. Supply gas. A plurality of holes 34-1 may be formed on the tube wall of each gas supply pipe 34 facing the inner peripheral surface of each of the plurality of through holes 32a. Moreover, when the several hole 34-1 is formed, it is preferable that the several hole 34-1 is arranged in the position which has symmetry.

  The plurality of gas supply pipes 34 includes a first gas supply pipe 34a, a second gas supply pipe 34b, and a third gas supply pipe 34c. The first gas supply pipe 34 a is connected to a first buffer chamber 37 a of a gas introduction member 36 to be described later, and supplies a first type of processing gas introduced from the first buffer chamber 37 a to the space 35. To do. The second gas supply pipe 34b is connected to a second buffer chamber 37b of a gas introduction member 36, which will be described later, and supplies a second type of processing gas introduced from the second buffer chamber 37b to the space 35. To do. The third gas supply pipe 34c is connected to a third buffer chamber 37c of a gas introduction member 36, which will be described later, and supplies a third type of processing gas introduced from the third buffer chamber 37c to the space 35. To do. The first gas supply pipe 34 a, the second gas supply pipe 34 b, and the third gas supply pipe 34 c are gas supply pipes that supply different types of processing gases to the space 35 among the plurality of gas supply pipes 34. It corresponds to an example. Further, each of the first gas supply pipe 34 a, the second gas supply pipe 34 b, and the third gas supply pipe 34 c supplies the processing gas having the same type among the plurality of gas supply pipes 34 to the space 35. This corresponds to an example of a gas supply pipe.

  The gas introduction member 36 is connected to a gas supply source (not shown), and a disk for introducing a processing gas from the gas supply source into each inlet of the plurality of gas supply pipes 34 inside the gas introduction member 36. A shaped buffer chamber 37 is formed. The buffer chamber 37 has three buffer chambers formed separately from each other in the vertical direction. In the example of FIG. 1, the three buffer chambers are shown as a first buffer chamber 37a, a second buffer chamber 37b, and a third buffer chamber 37c in order from the top.

  Processing gases of different types are supplied to each of the buffer chambers 37a, 37b, and 37c from a gas supply source (not shown). Specifically, the first type of processing gas is supplied to the first buffer chamber 37a, the second type of processing gas is supplied to the second buffer chamber 37b, and the third buffer chamber is supplied. 37c is supplied with a third type of processing gas.

  Each buffer chamber 37a, 37b, 37c is connected to each inlet of a plurality of gas supply pipes 34. Specifically, the inlet of the first gas supply pipe 34a is connected to the first buffer chamber 37a, and the inlet of the second gas supply pipe 34b is connected to the second buffer chamber 37b. The third buffer chamber 37c is connected to the inlet of the third gas supply pipe 34c. The second buffer chamber 37b is formed to avoid the first gas supply pipe 34a extending from the first buffer chamber 37a disposed above the second buffer chamber 37b. The third buffer chamber 37c includes a first gas supply pipe 34a and a second gas supply extending from the first buffer chamber 37a and the second buffer chamber 37b disposed above the third buffer chamber 37c. It is formed in a shape that avoids the tube 34b.

  In this way, by connecting the respective inlets of the plurality of gas supply pipes 34 to the respective buffer chambers 37a, 37b, 37c, process gases having different types are supplied to the space 35. That is, the first type of processing gas supplied to the first buffer chamber 37a is introduced into the first gas supply pipe 34a, and then supplied to the space 35 from the first gas supply pipe 34a. In addition, the second type of processing gas supplied to the second buffer chamber 37b is introduced into the second gas supply pipe 34b and then supplied to the space 35 from the second gas supply pipe 34b. Further, the third type of processing gas supplied to the third buffer chamber 37c is introduced into the third gas supply pipe 34c, and then supplied to the space 35 from the third gas supply pipe 34c.

  In addition, each buffer chamber 37a, 37b, 37c is connected to an inlet of each of a plurality of gas supply pipes 34 via a blocking member 36a that blocks high-frequency power. The blocking member 36a is formed of a material having higher resistance than each of the plurality of gas supply pipes 34.

  3 is an enlarged cross-sectional view of the blocking member shown in FIG. In FIG. 3, as an example, a state in which the first gas supply pipe 34a among the plurality of gas supply pipes 34 is connected to the first buffer chamber 37a via the blocking member 36a is shown. As shown in FIG. 3, the blocking member 36a is formed in a cylindrical shape. The in-cylinder space of the first gas supply pipe 34a communicates with the in-cylinder space of the blocking member 36a. The blocking member 36a is formed in a cylindrical shape from a material having a higher resistance than the first gas supply pipe 34a. As a result, the blocking member 36a introduces the first type of processing gas into the first gas supply pipe 34a, while the high frequency power supplied to the first gas supply pipe 34a is directed to the first buffer chamber 37a. Propagation to can be prevented.

  Note that the gas supply pipe 34 and the blocking member 36a may be joined to each other as long as the gas supply pipe 34 and the blocking member 36a are joined so as not to leak gas, such as screw fitting with a sealing material sandwiched in addition to brazing or welding.

  Please refer to FIG. 1 again. A cylindrical cooling jacket 42 is provided on the outer peripheral surface of the gas introduction member 36. The cooling jacket 42 has a flow passage 42a through which a refrigerant can flow, and cools the gas introduction member 36 by the flow of the refrigerant. The cooling jacket 42 has conductivity. The lower end portion of the side wall of the cooling jacket 42 is attached to the upper surface of the ground plate 32 via an O-ring, for example. The upper end portion of the side wall of the cooling jacket 42 forms an opening, and the opening at the upper end portion of the side wall of the cooling jacket 42 is closed by the top plate 44. The top plate 44 is attached to the upper end portion of the side wall of the cooling jacket 42 via, for example, an O-ring.

  The power supply member 38 is provided in the plurality of gas supply pipes 34. Specifically, the power supply member 38 is a sheet-like member interposed between the insulator 33 and the gas introduction member 36, and a plurality of gas supply pipes 34 penetrate the power supply member 38 in a plurality of states. The gas supply pipe 34 is attached.

  The power supply member 38 supplies different high-frequency powers corresponding to the types of the processing gases to the gas supply tubes that supply the processing gases of different types to the space 35 among the plurality of gas supply tubes 34. For example, since the first gas supply pipe 34a supplies the first type of processing gas to the space 35, the power supply member 38 corresponds to the first type of processing gas with respect to the first gas supply pipe 34a. The high frequency power P1 to be supplied is supplied. Further, for example, in the power supply member 38, the second gas supply pipe 34 b supplies the second type of processing gas to the space 35, so that the second type of processing gas is supplied to the second gas supply pipe 34 b. The high frequency power P2 corresponding to is supplied. Further, for example, since the third gas supply pipe 34c supplies the third type of processing gas to the space 35, the power supply member 38 has a third type of processing gas with respect to the third gas supply pipe 34c. The high frequency power P3 corresponding to is supplied. As a result, the power supply member 38 converts the processing gases supplied from the gas supply pipes of different types into plasma in the space 35.

  The power supply member 38 supplies the same high-frequency power to the gas supply pipe that supplies the processing gas of the same type among the plurality of gas supply pipes 34 to the space 35. For example, since the first gas supply pipe 34a supplies the first type of processing gas to the space 35, the power supply member 38 supplies the same high-frequency power P1 to all the first gas supply pipes 34a. To do. Further, for example, since the second gas supply pipe 34b supplies the second type of processing gas to the space 35, the power supply member 38 has the same high-frequency power P2 for all the second gas supply pipes 34b. Supply. Further, for example, since the third gas supply pipe 34c supplies the third type of processing gas to the space 35, the power supply member 38 has the same high-frequency power P3 for all the third gas supply pipes 34c. Supply. As a result, the power supply member 38 plasmifies the processing gas of the same type supplied from the gas supply pipe in the space 35.

  4 is an exploded perspective view of the power supply member shown in FIG. In FIG. 4, for convenience of explanation, only one first gas supply pipe 34a and one second gas supply pipe 34b are shown, and other first gas supply pipes 34a and other second gas supply pipes 34b are shown. The gas supply pipe 34b and the third gas supply pipe 34c are not shown.

  As shown in FIG. 4, the power supply member 38 includes a first insulating layer 52, an insulating film 54, and a second insulating layer 56 laminated on the first insulating layer 52 via the insulating film 54. .

  The first insulating layer 52 is formed in a sheet shape from an insulator, and has a through hole through which the first gas supply pipe 34a and the second gas supply pipe 34b pass. A conductor pattern 62 is formed on the upper surface 52 a of the first insulating layer 52. The conductor pattern 62 is formed of, for example, a copper foil having a thickness of 35 μm. The width of the conductor pattern 62 is preferably about 1 cm when the temperature rise is 10 ° C. One end of the conductor pattern 62 is connected to a high frequency power supply RF1 that outputs a high frequency power P1, and the other end of the conductor pattern 62 is connected to a first gas supply pipe 34a that supplies a first type of processing gas. The conductor pattern 62 supplies the high frequency power P1 from the high frequency power supply RF1 to the first gas supply pipe 34a.

  Further, the upper surface 52a of the first insulating layer 52 on the side where the conductor pattern 62 is formed and the second gas supply pipe 34b penetrating the through hole of the first insulating layer 52 may be orthogonal to each other. preferable. Thereby, interference of electromagnetic waves between the conductor pattern 62 and the second gas supply pipe 34b can be suppressed.

  A shield layer 64 that blocks high-frequency power is formed on the lower surface 52b of the first insulating layer 52 opposite to the upper surface 52a on the side where the conductor pattern 62 is formed. Thereby, capacitive coupling generated between the first insulating layer 52 and another insulating layer due to the high-frequency power P1 propagating through the conductor pattern 62 can be suppressed.

  The insulating film 54 is interposed between the first insulating layer 52 and the second insulating layer 56. The insulating film 54 is formed in a sheet shape with an insulator, and has a through hole through which the first gas supply pipe 34a and the second gas supply pipe 34b pass. The first shield layer 52b, the insulating layer 52, and the conductor pattern 62 are insulated from the second shield layer 56b, the insulating layer 56, and the conductor pattern 66 by the insulating film 54.

  The second insulating layer 56 is formed in a sheet shape from an insulator, and has a through hole through which the first gas supply pipe 34a and the second gas supply pipe 34b pass. A conductor pattern 66 is formed on the upper surface 56 a of the second insulating layer 56. One end of the conductor pattern 66 is connected to a high frequency power source RF2 that outputs a high frequency power P2 different from the high frequency power P1, and the other end of the conductor pattern 66 is a second gas supply pipe that supplies a second type of processing gas. 34b. The conductor pattern 66 supplies the high frequency power P2 from the high frequency power supply RF2 to the second gas supply pipe 34b.

  Further, the upper surface 56a of the second insulating layer 56 on the side where the conductor pattern 66 is formed and the first gas supply pipe 34a penetrating the through hole of the second insulating layer 56 may be orthogonal to each other. preferable. Thereby, interference of electromagnetic waves between the conductor pattern 66 and the first gas supply pipe 34a can be suppressed.

  A shield layer 68 for blocking high-frequency power is formed on the lower surface 56b of the second insulating layer 56 on the side opposite to the upper surface 56a on the side where the conductor pattern 66 is formed. Thereby, the capacitive coupling which generate | occur | produces between the 2nd insulating layer 56 and another insulating layer resulting from the high frequency electric power P2 which propagates the conductor pattern 66 can be suppressed.

  Although not shown in FIG. 4, the conductor pattern 62 branches from the other end connected to the high frequency power supply RF1 and is also connected to another first gas supply pipe 34a (not shown). . The conductor pattern 62 supplies the high frequency power P1 from the high frequency power supply RF1 to the other first gas supply pipe 34a.

  Although not shown in FIG. 4, the conductor pattern 66 branches from the other end connected to the high frequency power supply RF2, and is also connected to another second gas supply pipe 34b (not shown). . The conductor pattern 66 supplies the high frequency power P2 from the high frequency power supply RF2 to the other second gas supply pipe 34b.

  Although not shown in FIG. 4, the power supply member 38 further includes a third insulating layer stacked on the second insulating layer 56 with the insulating film 54 interposed therebetween. Similar to the first insulating layer 52 and the second insulating layer 56, the third insulating layer is formed in a sheet shape from an insulator and has a through hole through which the gas supply pipe passes. A conductor pattern is formed on the upper surface of the third insulating layer. One end of the conductor pattern is connected to a high-frequency power source that outputs high-frequency power P3, and the other end of the conductor pattern is connected to a third gas supply pipe 34c that supplies a third type of processing gas. The conductor pattern supplies high frequency power P3 from a high frequency power source to the third gas supply pipe 34c.

  As described above, according to the plasma processing apparatus 1 of the first embodiment, the plurality of gas supply pipes 34 are respectively inserted into the plurality of through holes 32a of the ground plate 32, and the gas supply pipes that supply different types of processing gases are used. Different high frequency power is supplied according to the type of processing gas. As a result, according to the first embodiment, it is possible to appropriately control the plasma density for each type of processing gas without being restricted in structure.

  Here, the electrode is passed through the through hole of the ground plate attached in the processing container, and a space is formed between the outer peripheral surface of the electrode and the inner peripheral surface of the through hole. A conventional power supply structure in which a space is formed between the susceptor and the susceptor can be considered. In a conventional plasma processing apparatus using a power feeding structure, a space formed between the outer peripheral surface of the electrode and the inner peripheral surface of the through hole, the tip of the electrode, and the susceptor in the processing container are formed. Process gases of different types are supplied to each space, and plasma of the process gas is generated in each space. For this reason, in a plasma processing apparatus using a conventional power supply structure, when the plasma density is controlled for each type of processing gas supplied to each space, the distance between the spaces is adjusted in advance according to the type of processing gas. Work occurs. Therefore, in a plasma processing apparatus using a conventional power supply structure, control of plasma density may be subject to structural limitations.

  On the other hand, in the plasma processing apparatus 1 of the first embodiment, a plurality of gas supply pipes 34 are respectively inserted into the plurality of through holes 32a of the ground plate 32, and gas supply pipes for supplying different types of processing gases. Different high-frequency power is supplied depending on the type of processing gas. Therefore, according to the first embodiment, in the space 35 formed between the outer peripheral surfaces of the plurality of gas supply pipes 34 and the inner peripheral surfaces of the plurality of through holes 32a, the types are mutually different. Different process gas plasmas can be generated. As a result, according to the first embodiment, it is possible to reduce the work of adjusting the distance of the space 35 in advance, so that it is possible to appropriately control the plasma density for each type of processing gas without being restricted in structure. Can be done.

  In the plasma processing apparatus 1 of the first embodiment, the power supply member 38 supplies the same high frequency power to the gas supply pipe that supplies the processing gas of the same type to the space 35. As a result, according to the first embodiment, the plasma density can be uniformly controlled between the spaces 35 to which the processing gases of the same type are supplied.

  In the plasma processing apparatus 1 of the first embodiment, the power supply member 38 includes the first insulating layer 52 in which the conductor pattern 62 that supplies the high-frequency power P1 to the first gas supply pipe 34a is formed, and the second The gas supply pipe 34b is formed by laminating a second insulating layer 56 on which a conductor pattern 66 for supplying high-frequency power P2 is formed. As a result, according to the first embodiment, it is possible to appropriately control the plasma density for each type of processing gas, and to prevent interference between different high-frequency powers depending on the type of processing gas.

(Second Embodiment)
Next, a second embodiment will be described. The plasma processing apparatus according to the second embodiment has the same configuration as the plasma processing apparatus 1 according to the first embodiment except for the internal structure of the ground plate 32. Therefore, in the second embodiment, the same reference numerals are used for components common to the first embodiment, and detailed description thereof is omitted.

  In the plasma processing apparatus 1 according to the first embodiment, the plasma density is controlled for each type of processing gas. However, the longer the residence time of the gas molecules supplied in the plasma, the more gas molecules are excited. Therefore, there is a possibility that the generated radical species may vary. Such variations in radical species reduce the uniformity of the plasma density distribution, and as a result, reduce the in-plane uniformity of the substrate S.

  Therefore, in the plasma processing apparatus according to the second embodiment, the variation of the radical species is suppressed. FIG. 5 is a longitudinal sectional view showing an outline of the configuration of the plasma processing apparatus according to the second embodiment.

  As shown in FIG. 5, an exhaust passage 32 b is formed inside the ground plate 32. The exhaust passage 32 b is formed in a shape that avoids the plurality of through holes 32 a inside the ground plate 32. The exhaust passage 32 b is connected to an exhaust device 52 outside the processing container 10 via an exhaust pipe 51. The exhaust device 52 includes a vacuum pump, and depressurizes the exhaust passage 32b to a predetermined degree of vacuum.

  An exhaust hole 32 c is formed in the ground plate 32. The exhaust hole 32c allows the space G sandwiched between the ground plate 32 and the mounting table 2 to communicate with the exhaust flow path 32b. The exhaust hole 32c exhausts the processing gas supplied from each of the plurality of gas supply pipes 34 to the space 35 and flowing into the space G into the exhaust passage 32b.

  Before and after the start of the process, the inside of the processing vessel 10 is exhausted through the exhaust pipe 13 in order to exhaust the atmosphere and residual gas at high speed. In this case, during the process, a valve (not shown) provided between the exhaust pipe 13 and the exhaust device may be closed, or the exhaust pipe 13 is so effective that exhaust from the exhaust hole 32c is mainly effective. Conductance may be reduced.

  6 is an enlarged plan view showing a part of the ground plate shown in FIG. As shown in FIG. 6, the exhaust hole 32 c is formed on the circumference C of a circle centered on the central axis A when the ground plate 32 is viewed from the direction along the central axis A of each of the plurality of gas supply pipes 34. Is arranged. In the example of FIG. 6, the plurality of exhaust holes 32 c are arranged on the circumference C at equal intervals.

  Further, the exhaust hole 32c is configured so that each of the three gas supply pipes adjacent to each other among the plurality of gas supply pipes 34 when the ground plate 32 is viewed from the direction along the central axis A of each of the plurality of gas supply pipes 34. The central axis A and the central axis of the exhaust hole 32c are arranged at the same distance. That is, if the distance between the central axis A of each of the three adjacent gas supply pipes and the central axis of the exhaust hole 32c is L1, L2, and L3, L1 = 2 = L3 is established.

  As described above, according to the plasma processing apparatus 1 of the second embodiment, the ground plate 32 has the exhaust flow path 32b and the exhaust hole 32c. The exhaust passage 32 b is formed inside the ground plate 32. The exhaust hole 32c allows the space G sandwiched between the ground plate 32 and the mounting table 2 to communicate with the exhaust flow path 32b, and exhausts the processing gas supplied to the space 35 and flowing into the space G into the exhaust flow path 32b. For this reason, exhaust is performed in the vicinity of the space 35 to which the processing gas is supplied. Thereby, the residence time of the gas molecule supplied in plasma is shortened, and the dispersion | variation in the radical species produced | generated is suppressed. Therefore, the uniformity of the plasma density distribution is improved. As a result, the in-plane uniformity of the substrate S can be improved.

  In the first and second embodiments, the power supply member 38 has a high-frequency power having a different size depending on the type of the processing gas with respect to the gas supply pipe that supplies the processing gas having a different type to the space 35. However, the disclosed technology is not limited to this. For example, the power supply member 38 may supply high-frequency power having a different frequency according to the type of the processing gas to the gas supply pipe that supplies the processing gas having a different type to the space 35. As a result, the plasma density can be controlled more appropriately for each type of processing gas.

DESCRIPTION OF SYMBOLS 1 Plasma processing apparatus 2 Mounting base 10 Processing container 32 Ground plate 32a Through-hole 33 Insulator 34 Gas supply pipe 34a First gas supply pipe 34b Second gas supply pipe 34c Third gas supply pipe 35 Space 36 Gas introduction member 36a Block member 37 Buffer chamber 37a First buffer chamber 37b Second buffer chamber 37c Third buffer chamber 38 Power supply member 52 First insulating layer 54 Insulating film 56 Second insulating layers 62 and 66 Conductive patterns 64 and 68 Shield layer

Claims (11)

A processing vessel;
A mounting table provided inside the processing container and on which a substrate is mounted;
A ground plate that is attached to the processing container so as to face the mounting table, and has a plurality of through holes,
A plurality of gas supply pipes respectively inserted into the plurality of through-holes of the ground plate, each being between an outer peripheral surface of each of the plurality of gas supply pipes and an inner peripheral surface of each of the plurality of through-holes; A plurality of gas supply pipes for supplying a processing gas to the space formed in
Wherein provided in a plurality of gas supply pipes, for the mutually type is different from the processing gas out of the plurality of gas supply pipes to a gas supply pipe for supplying to said space, RF power having different frequencies according to the type of the process gas A plasma processing apparatus comprising: a power supply member that converts the processing gas into plasma in the space by supplying The power supply member further includes
The plasma processing apparatus according to claim 1, wherein the same high frequency power is supplied to a gas supply pipe that supplies the processing gas of the same type among the plurality of gas supply pipes to the space. The power supply member is
A plurality of insulating layers stacked on each other, wherein different high-frequency electric power corresponding to the type of the processing gas is supplied to a gas supply pipe that supplies a processing gas having a different type to the space among the plurality of gas supply pipes The plasma processing apparatus according to claim 1, further comprising a plurality of insulating layers each having a conductor pattern formed thereon. The power supply member is
The plasma processing apparatus according to claim 3, further comprising an insulating film interposed between the plurality of insulating layers.   5. The shield layer for blocking high-frequency power is formed on a surface of each of the plurality of insulating layers opposite to a surface on which the conductor pattern is formed. 6. Plasma processing equipment. A gas introduction member having a buffer chamber formed therein for introducing a processing gas into each of the gas supply pipes;
In the buffer chamber via a shut-off member for blocking a high-frequency power, plasma of any one of claims 1 to 5 in which the inlet of each of the plurality of gas supply pipe, characterized in that it is connected Processing equipment. The plasma processing apparatus according to claim 6 , wherein the blocking member is made of a material having higher resistance than each of the plurality of gas supply pipes. The plasma processing apparatus according to claim 6 , further comprising a cooling jacket provided on an outer peripheral surface of the gas introduction member and having a flow path for allowing a refrigerant to flow inside. A processing vessel;
A mounting table provided inside the processing container and on which a substrate is mounted;
A ground plate that is attached to the processing container so as to face the mounting table, and has a plurality of through holes,
A plurality of gas supply pipes respectively inserted into the plurality of through-holes of the ground plate, each being between an outer peripheral surface of each of the plurality of gas supply pipes and an inner peripheral surface of each of the plurality of through-holes; A plurality of gas supply pipes for supplying a processing gas to the space formed in
Wherein provided in a plurality of gas supply pipes, for the mutually type is different from the processing gas out of the plurality of gas supply pipes to a gas supply pipe for supplying to said space, RF power having different frequencies according to the type of the process gas A power supply member that converts the processing gas into plasma in the space by supplying
The ground plate is
An exhaust passage formed inside the ground plate;
An exhaust hole for communicating another space sandwiched between the ground plate and the mounting table to the exhaust passage and exhausting the processing gas supplied to the space and flowing into the other space into the exhaust passage. And a plasma processing apparatus. The exhaust hole is
According to claim 9, characterized in the ground plate when viewed from a direction along the central axis of each of the plurality of gas supply pipes, to be arranged on the circumference of a circle around the central axis Plasma processing equipment. The exhaust hole is
When the ground plate is viewed from the direction along the central axis of each of the plurality of gas supply pipes, the central axis of each of the three gas supply pipes adjacent to each other among the plurality of gas supply pipes, and the exhaust The plasma processing apparatus according to claim 9 , wherein the plasma processing apparatus is disposed at a position where the distance from the central axis of the hole is equal.

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