JP6225243B2 - Microwave processing system and substrate processing method - Google Patents

Description

  The present invention relates to substrate / wafer processing, and more particularly to microwave resonator systems and methods for processing substrates and / or semiconductor wafers.

  This application is a continuation of US Patent Application No. 13/249560 (Attorney No. TEA-074) filed September 30, 2011 entitled “PLASMA TUNING RODS IN MICROWAVE RESONATOR PLASMA SOURCES”. . The contents of this application are incorporated herein by reference.

  In general, during semiconductor processing, a (dry) plasma etching process is used to remove or etch material along fine lines patterned on a semiconductor substrate or within a via or contact. A plasma etching process typically includes placing a semiconductor substrate with a patterned protective layer, such as a photoresist layer, overlying it in a process chamber.

Once the substrate is placed inside the chamber, an ionizable dissociated gas mixture is introduced into the chamber at a predetermined flow rate while the vacuum pump is throttled to achieve ambient process pressure. Thereafter, plasma is generated when some of the gas species present after collision with high energy electrons ionize. Moreover, the heated electrons function to dissociate some of the mixed gas species and generate reactive species (s) suitable for etching the exposed surface. Once the plasma is generated, any exposed surface of the substrate is etched by the plasma. The process is adjusted to achieve optimal conditions. Optimal conditions include an appropriate concentration of the desired reactants and ion distribution for etching various features (eg, trenches, vias, contacts, etc.) in the exposed areas of the substrate. Such substrate materials include, for example, silicon dioxide (SiO ₂ ), polycrystalline silicon, and silicon nitride if etching is required.

  Conventionally, as described above, various methods have been implemented to excite gas into plasma to process a substrate during semiconductor device manufacturing. In particular, ("parallel plates") capacitively coupled plasma (CCP) processing systems or inductively coupled plasma (ICP) processing systems have been widely used for plasma excitation, among other types of plasma sources, microwaves. There are plasma sources (including those that utilize electron cyclotron resonance (ECR)), surface wave plasma (SWP) sources, and helicon plasma sources.

It has become widely known that microwave resonator systems provide improved plasma processing performance—especially for etching processes—over CCP, ICP, and resonant heating systems. Microwave resonator systems produce large-scale ionization at relatively low Boltzmann electron temperatures (T _e ). In addition, SWP sources typically generate abundant plasma in electronically excited molecular species while reducing molecular dissociation. However, actual implementations of microwave resonator systems suffer from multiple deficiencies, including, for example, plasma stability and uniformity.

  The present invention relates to microwave resonator systems, and more particularly to a stable and / or uniform resonator subsystem in a microwave resonator system.

  According to an embodiment, a microwave processing system for processing a substrate includes a process chamber having a process space for processing the substrate therein, and a resonator assembly coupled to the process chamber by using an interface assembly. Have. The resonator assembly has an electromagnetic (EM) energy regulation space inside, and the interface assembly has a set of a plurality of isolation assemblies, and a set of a plurality of EM coupling regions is the EM energy. Set in the regulation space. A set of plasma control rods is coupled to the set of isolated assemblies, and the set of plasma control rods is configured to control plasma uniformity within the process space. And an EM control unit configured in the EM energy control space and coupled to at least one of the plurality of EM coupling regions. A resonator sensor is coupled to the EM energy conditioning space and configured to obtain resonator data. The controller is coupled to the first set of isolation assemblies and the resonator sensor. The controller controls the plurality of EM energy adjustment spaces in the EM energy adjustment space by controlling the plurality of plasma control rods by using the plurality of isolation assemblies and the resonator data. The set of coupling regions and the plasma uniformity within the process space are controlled.

1A-1C represent various exemplary views of a first microwave processing system according to an embodiment of the present invention. 2A-2C represent various exemplary views of a second microwave processing system according to an embodiment of the present invention. 3A-3C represent various exemplary views of a third microwave processing system according to an embodiment of the present invention. 4A-4C represent various exemplary views of a fourth microwave processing system according to an embodiment of the present invention. 5A-5D represent various exemplary views of exemplary plasma conditioning rods according to embodiments of the present invention. 6A-6D represent various exemplary views of other exemplary plasma conditioning rods according to embodiments of the present invention. 7A-7D represent various exemplary views of exemplary plasma conditioning rods according to embodiments of the present invention. Fig. 2 represents a flow diagram of an exemplary operation procedure according to an embodiment of the present invention. 1 illustrates a plasma processing system 900 according to an embodiment of the present invention. 10A shows a schematic top view of an embodiment of the microwave processing system of the present invention, and 10B shows a schematic perspective view of an embodiment of the microwave processing system of the present invention. 11A shows a top view, partially cut away, of another embodiment of the microwave processing system of the present invention. 11B shows a partially cut away perspective view of an embodiment of the microwave processing system of the present invention. FIG. 6 is a schematic top view of an alternative embodiment of the microwave processing system of the present invention. FIG. 6 is a schematic top view of an alternative embodiment of the microwave processing system of the present invention.

  Embodiments of the present invention will now be described by way of example only with reference to the accompanying schematic drawings. In the figure, corresponding reference numbers indicate corresponding parts.

  A microwave resonator source is disclosed in various embodiments. However, one of ordinary skill in the art appreciates that the various embodiments can be practiced without one or more specific details, or with other substitutions and / or additional methods, materials, or ingredients. . In other instances, well-known structures, materials, or operations have not been shown or described in detail to avoid obscuring aspects of various embodiments of the invention.

  Similarly, specific numerical values, materials, and configurations are given for illustrative purposes to provide a thorough understanding of the present invention. Nevertheless, the invention may be practiced without the specific details. Furthermore, it should be noted that the various embodiments shown in the figures are illustrative and are not necessarily drawn to scale.

  As used herein, “one embodiment” or “example” or variations thereof refers to a particular feature, structure, material, or characteristic described in connection with the embodiment of the present invention. It is meant to be included in at least one embodiment and does not mean that they are present in any embodiment. Thus, the phrases “in one embodiment” or “in an embodiment” appear in various places, but this does not necessarily refer to the same embodiment of the invention. Furthermore, particular features, structures, materials, or characteristics may be combined in any suitable manner in one or more embodiments.

  Nevertheless, although the nature of the invention as a general concept has been described, it should be noted that features belonging to the nature of the invention are also included in the detailed description of the invention.

  Referring now to the drawings, FIG. 1A represents a first microwave resonator system 100 according to an embodiment of the present invention. Throughout the drawings, like reference numerals designate identical or corresponding members. The first microwave resonator system 100 may be used in a dry plasma etching system or a plasma deposition system. The first microwave resonator system 100 can include a first resonator system 180 that can be coupled to the process chamber 110. Alternatively, the first microwave resonator system 100 may have a different configuration.

FIG. 1A shows a front view of the first microwave resonator system 100. The front view shows an xy plan view of a process chamber 110 that can be configured by using a first interface assembly 165a and a plurality of chamber walls 110 coupled to the first interface assembly 165a. Process space 115 may be configured within process chamber 110. For example, the chamber wall 112 may have a wall thickness (t), and the wall thickness (t) may vary between about 1 mm and about 5 mm. The first interface assembly 165a may have a first interface thickness (t _i1 ). The first interface thickness (t _i1 ) may vary from about 1 mm to about 10 mm. It should be noted that in this embodiment and all subsequent embodiments, the dimensions given may be different from those described. For example, the chamber wall and interface thickness can be up to 30 mm or more.

  The front view of the first resonator subsystem 180 may include a first resonator assembly 181 having a plurality of resonator walls (182a, 182b, 183, and 184) defining a first EM energy conditioning space 185 therein. An xy plan view is shown. For example, the resonator walls (182a, 182b, 183, and 184) may include a dielectric material such as quartz. In addition, one or more resonator sensors 106 may be coupled to the first EM energy conditioning space 185 to obtain first resonator data.

The resonator wall 182a may have a wall thickness (t _a ). The wall thickness _{(t a)} may vary from about 1mm~ about 5 mm. The resonator wall 182b may have a wall thickness (t _b ). The wall thickness (t _b ) may vary from about 1 mm to about 5 mm. The resonator wall 182 may have a wall thickness (t). The wall thickness (t) may vary from about 1 mm to about 5 mm. It should be noted that in this embodiment and all subsequent embodiments, the dimensions given may be different from those described. For example, the chamber wall and interface thickness can be up to 30 mm or more.

In some examples, the first interface assembly 165a may be used to removably couple the first resonator assembly 181 and the process chamber 110. The first interface assembly 165a may have a first interface thickness (t _i1 ). The wall thickness (t _i1 ) may vary from about 1 mm to about 10 mm. Alternatively, the first interface aggregate 165a may not be required or may have a different configuration. The first interface aggregate 165a may include one or more isolation aggregates (164a, 164b, and 164c). Each of the isolation assemblies (164a, 164b, and 164c) may be removably coupled to the lower resonator wall 183 and removably coupled to one or more first interface assemblies 165a. You can do it.

In addition, the second interface assembly 165b may be coupled to the first resonator assembly 181 by using the upper resonator wall 184. The second interface assembly 165b may have a second interface thickness (t _i2 ). The wall thickness (t _i2 ) may vary from about 1 mm to about 10 mm. Alternatively, the second interface aggregate 165b may not be required or may have a different configuration. The second interface aggregate 165b may include one or more control aggregates (160a, 160b, and 160c). Each of the control assemblies (160a, 160b, and 160c) may be removably coupled to the upper resonator wall 184 and removably coupled to the second interface assembly 165b. Alternatively, the control assemblies (160a, 160b, and 160c) may be coupled to the upper resonator wall 184, and the second interface assembly may be omitted.

  The first microwave resonator system 100 may be configured to generate a plasma in the process space 115 as the substrate holder 120 and the substrate move throughout the process space 115. The first microwave resonator system 100 may be configured to process 200 mm substrates, 300 mm substrates, or larger sized substrates. In addition, as will be appreciated by those skilled in the art, the first microwave resonator system 100 can be configured to process annular, square, or rectangular substrates, wafers, or LCDs regardless of size. As such, cylindrical, square, and / or rectangular chambers may be configured. Thus, although aspects of the invention have been described in connection with processing a semiconductor substrate, the invention is not so limited.

  In other embodiments, the first resonator subsystem 180 may have a plurality of resonant cavities (not shown) therein. In other embodiments, the first resonator subsystem 180 may include a plurality of resonator subsystems having one or more resonant cavities therein. In various systems, the first resonator subsystem 180 and the first EM energy conditioning space 185 may have a cylindrical shape, a rectangular shape, or a square shape.

  In some embodiments, the microwave source 150 may be coupled to the first resonator assembly 181. In addition, one or more RF sources (not shown) may be coupled to the first resonator subsystem 180. Microwave source 150 may be coupled to matching network 152. The matching network 152 may be coupled to the coupling network 154. Alternatively, multiple matching networks (not shown) or multiple coupling networks (not shown) may be coupled to the first resonator subsystem 180. The coupling network 154 may be removably coupled to the upper resonator wall 184 of the first resonator assembly 181 and may be used to provide microwave energy to the first EM energy conditioning space 185. Alternatively, other coupling configurations may be used.

The first plasma adjustment rods 170a and 175a may extend to enter the process space 115 at the first position (x _2a ), and the first EM energy at the first position (x _1a ). A first EM energy adjustment unit 175a that can extend so as to enter the adjustment space 185 may be provided. The first isolation assembly 164a sets the first plasma adjustment unit 170a at the first plasma adjustment distance 171a at the first position defined by using (x _2a ) in the process space 115 (first plasma). The first plasma adjustment unit 170a may be extended to the adjustment distance 171a). For example, the first plasma adjustment distance 171a may vary from about 10 mm to about 400 mm, and the first plasma adjustment distance 171a may be wavelength dependent and may vary from about (λ / 4) to about (10λ). It should be noted that in this embodiment and all subsequent embodiments, the dimensions given may be different from those described. For example, the distance may be 1 m or more and may be up to the entire length to the opposite side of the process space.

The first EM coupling region 162a may be set at a first EM coupling distance 176a from the upper resonator wall 184 in the first EM energy tuning space 185, and the first EM tuning unit 175a extends to enter the first EM coupling region 162a. obtain. The first EM adjustment unit 175a may obtain first adjustable microwave energy from the first EM coupling region 162a. The first microwave energy may be transferred to the process space 115 as the first plasma adjustment energy at the first position (x _2a ) by using the first plasma adjustment unit 170a. The first EM coupling region 162a may include an adjustable electric field region, an adjustable magnetic field region, a maximum field region, a maximum voltage region, a maximum energy region, or a maximum current region, or a combination thereof. For example, the first EM coupling distance 176a may vary from about 0.01 mm to about 10 mm, and the first EM coupling distance 176a may be wavelength dependent and vary from about (λ / 4) to about (10λ). It should be noted that in this embodiment and all subsequent embodiments, the dimensions given may be different from those described. For example, the distance may be a maximum of 20 mm or more.

  The first plasma conditioning slab 161a may be coupled to the first control assembly 160a, and the first control assembly 160a may be coupled to the first plasma regulation rod (170a, 175a) in the first EM energy regulation space 185. The first plasma adjustment slab 161a may be used to move the first EM adjustment distance 177a with respect to the 1EM adjustment unit 175a. The first control assembly 160a and the first plasma adjustment slab 161a are used to optimize the microwave energy coupled from the first EM coupling region 162a to the first EM adjustment unit 175a of the first plasma adjustment rod (170a, 175a). May be used. For example, the first EM adjustment distance 177a may be set between the first EM adjustment unit 175a and the first plasma adjustment slab 161a in the first EM energy adjustment space 185, and the first EM adjustment distance 177a may be about 0.01 mm to about 1.9 mm. It may vary between about 1 mm. It should be noted that in this embodiment and all subsequent embodiments, the dimensions given may be different from those described. For example, the distance may be up to 20 mm or more.

The first plasma control rod (170a, 175a) may have a first diameter (d _1a ). The first diameter (d _1a ) may vary from about 0.01 mm to about 40 mm. The first isolation assembly 164a may have a first diameter (D _1a ). The first diameter (D _1a ) may vary from about 1 mm to about 10 mm. It should be noted that in this embodiment and all subsequent embodiments, the dimensions given may be different from those described. For example, the plasma conditioning rod can have a diameter of up to 80 mm or more, and the isolation assembly can have a diameter of up to several hundred mm.

Adjustment rods that couple and distribute EM waves along the rod do not have a diameter limit to the most likely EM mode, eg, the HE ₁₁ mode. The diameter of the adjusting rod may be small enough to have only one mode (eg, HE ₁₁ ) —for example, less than 40 mm—or to have multiple types of EM wave modes supported by the adjusting rod. It can be very large.

The first EM adjustment unit 175a, the first EM coupling region 162a, the first control assembly 160a, and the first plasma adjustment slab 161a may have a first xy plane offset (x _1a ). For example, the first xy plane offset (x _1a ) may be set with respect to the resonator wall 182b and may vary from about (λ / 4) to about (10λ) depending on the wavelength. The first control assembly 160a may have a cylindrical configuration and a diameter (d _2a ) that can vary from about 1 mm to about 5 mm. The first plasma control slab 161a may have a diameter (D _2a ). The diameter (D _2a ) may vary from about 1 mm to about 10 mm. It should be noted that in this embodiment and all subsequent embodiments, the dimensions given may be different from those described. For example, the control assembly may have a diameter of 10 mm or more, and the slab may have a maximum diameter of 80 mm or more.

Second plasma adjusting rod (170b, 175b), the second plasma adjusting portion may extend so as to enter into the second position _{(x 2b)} in the process space 115 170b, and the 1EM energy at the second position _{(x 1b)} A second EM energy adjustment unit 175 b that can extend to enter the adjustment space 185 may be included. The second isolation assembly 164b is positioned at the second plasma adjustment distance 171b at the second position defined by using (x _2b ) in the process space 115 (second plasma). The first plasma adjustment unit 170b may be extended to the adjustment distance 171b). For example, the second plasma adjustment distance 171b may vary from about 10 mm to about 400 mm, and the second plasma adjustment distance 171b may be wavelength dependent and may vary from about (λ / 4) to about (10λ).

The second EM coupling region 162b may be set at a second EM coupling distance 176b from the lower resonator wall 183 in the first EM energy tuning space 185, and the second EM tuning unit 175b extends to enter the second EM coupling region 162b. obtain. The second EM adjustment unit 175b may obtain second adjustable microwave energy from the second EM coupling region 162b. The second microwave energy may be transferred to the process space 115 as the second plasma adjustment energy at the second position (x _2b ) by using the second plasma adjustment unit 170b. The second EM coupling region 162b may include an adjustable electric field region, an adjustable magnetic field region, a maximum field region, a maximum voltage region, a maximum energy region, or a maximum current region, or a combination thereof. For example, the second EM coupling distance 176b may vary from about 0.01 mm to about 10 mm, and the second EM coupling distance 176b may be wavelength dependent and vary from about (λ / 4) to about (10λ).

  The second plasma conditioning slab 161b may be coupled to the second control assembly 160b, and the second control assembly 160b is within the first EM energy regulation space 185 with respect to the second plasma regulation rod (170b, 175b). The second plasma adjustment slab 161b may be used to move with 163b by the second EM adjustment distance 177b. The second control assembly 160b and the second plasma regulation slab 161b are used to optimize the microwave energy coupled from the second EM coupling region 162b to the second EM regulation unit 175b of the second plasma regulation rod (170b, 175b). May be used. For example, the second EM adjustment distance 177b may be set between the second EM adjustment unit 175b and the second plasma adjustment slab 161b in the first EM energy adjustment space 185, and the second EM adjustment distance 177b may be about 0.01 mm to about 1.9 mm. It may vary between about 1 mm.

The second plasma control rod (170b, 175b) may have a second diameter (d _1b ). The second diameter (d _1b ) may vary from about 0.01 mm to about 1 mm. The second isolation assembly 164b may have a second diameter (D _1b ). The second diameter (D _1b ) may vary from about 1 mm to about 10 mm.

The second EM adjustment unit 175b, the second EM coupling region 162b, the second control assembly 160b, and the second plasma adjustment slab 161b may have a second xy plane offset (x _1b ). For example, the first xy plane offset (x _1b ) may be set with respect to the resonator wall 182b and may vary from about (λ / 4) to about (10λ) depending on the wavelength. The second control assembly 160b may have a cylindrical configuration and a diameter (d _2b ) that can vary from about 1 mm to about 5 mm. The second plasma control slab 161b may have a diameter (D _2b ). The diameter (D _2b ) may vary from about 1 mm to about 10 mm.

The third plasma adjustment rods 170c and 175c may extend to enter the process space 115 at the third position (x _2c ), and the first EM energy at the third position (x _1c ). A third EM energy adjustment unit 175c that can extend to enter the adjustment space 185 may be included. The third isolation assembly 164c has a third position defined by using (x _2c ) in the process space 115 and positions the third plasma adjustment unit 170c at the third plasma adjustment distance 171c (third plasma). The third plasma adjustment unit 170c may be extended to the adjustment distance 171c). For example, the third plasma adjustment distance 171c may vary from about 10 mm to about 400 mm, and the third plasma adjustment distance 171c may be wavelength dependent and may vary from about (λ / 4) to about (10λ).

The third EM coupling region 162c may be set at a third EM coupling distance 176c from the lower resonator wall 183 that defines the first EM energy tuning space 185, and the third EM tuning unit 175c may enter the third EM coupling region 162c. Can extend. The third EM adjustment unit 175c may obtain third adjustable microwave energy from the third EM coupling region 162c. The third microwave energy may be transferred to the process space 115 as the third plasma adjustment energy at the third position (x _2c ) by using the third plasma adjustment unit 170c. The third EM coupling region 162c may include an adjustable electric field region, an adjustable magnetic field region, a maximum field region, a maximum voltage region, a maximum energy region, or a maximum current region, or a combination thereof. For example, the third EM coupling distance 176c may vary from about 0.01 mm to about 10 mm, and the third EM coupling distance 176c may be wavelength dependent and vary from about (λ / 4) to about (10λ).

  The third plasma regulation slab 161c may be coupled to the third control assembly 160c, and the third control assembly 160c may be coupled to the third plasma regulation rod (170c, 175c) in the first EM energy regulation space 185. It may be used to move the third plasma adjustment slab 161c by the third EM adjustment distance 177c with respect to the 3EM adjustment unit 175c. The third control assembly 160c and the third plasma conditioning slab 161c may be used to optimize the microwave energy coupled from the third EM coupling region 162a to the third plasma conditioning rod (170c, 175c). For example, the third EM adjustment distance 177c may be set between the third EM adjustment unit 175c and the third plasma adjustment slab 161c in the first EM energy adjustment space 185, and the third EM adjustment distance 177c may be about 0.01 mm to about 1.9 mm. It may vary between about 1 mm.

The third plasma control rod (170c, 175c) may have a third diameter (d _1c ). The third diameter (d _1c ) may vary from about 0.01 mm to about 1 mm. The third isolation assembly 164c may have a first diameter (D _1c ). The third diameter (D _1c ) may vary from about 1 mm to about 10 mm.

The third EM adjustment unit 175c, the second EM coupling region 162c, the third control assembly 160c, and the third plasma adjustment slab 161c may have a third xy plane offset (x _1c ). For example, the third xy plane offset (x _1c ) may be set for the resonator wall 182b and may vary from about (λ / 4) to about (10λ) depending on the wavelength. The third control assembly 160c may have a cylindrical configuration and a diameter (d _2c ) that can vary from about 1 mm to about 5 mm. The third plasma control slab 161c may have a diameter (D _2c ). The diameter (D _2c ) may vary from about 1 mm to about 10 mm.

  The control aggregates (160a, 160b, and 160c) may be coupled to the controller 195 at 196. The controller 195 may control the uniformity of the plasma in the process space 115 by setting, controlling, and optimizing the EM adjustment distances (177a, 177b, and 177c). Controller 195 may be coupled to microwave source 150, matching network 152, and coupling network 154 at 196. The controller 195 uses process recipes to set, control, and optimize the microwave source 150, the matching network 152, and the coupling network 154 so that the EM coupling regions (162a, 162b, and 162c) in the EM energy conditioning space 185 are used. ) And the uniformity of the plasma in the process space 115 may be controlled. For example, the microwave source 150 may operate at a frequency between about 500 MHz and about 5000 MHz. In addition, controller 195 may be coupled to resonator sensor 106 and process sensor 107 at 196, and controller 195 sets, controls, and optimizes data from resonator sensor 106 and process sensor 107. By using the process recipe, the uniformity of the plasma in the EM coupling regions (162a, 162b, and 162c) in the EM energy adjustment space 185 and the process space 115 may be controlled.

The front surface of the first microwave resonator system 100 includes an xy plan view of the cavity control assembly 155 shown coupled to the front surface of the cavity conditioning slab 156. The cavity control assembly 155 may have a first diameter (d _1aa ). The first diameter (d _1aa ) may vary from about 0.01 mm to about 1 mm. The cavity conditioning slab 156 may have a second diameter (D _1aa ). The second diameter (D _1aa ) may vary from about 1 mm to about 10 mm. The cavity control assembly 155 and cavity adjustment slab 156 may have a first xy plane offset (y _1aa ). The first xy plane offset (y _1aa ) may vary from about 1 mm to about 10 mm.

  The cavity control assembly 155 may be used to move the cavity adjustment slab 156 by the cavity adjustment distance 158 within the first EM energy adjustment space 185. Controller 195 may be coupled to cavity control assembly 155 at 196. Controller 195 may control and maintain plasma uniformity in process space 115 in real time by using a process recipe that sets, controls, and optimizes cavity adjustment distance 158. For example, the cavity adjustment distance 158 may vary from about 0.01 mm to about 10 mm, and the cavity adjustment distance 158 may be wavelength dependent and vary from about (λ / 4) to about (10λ). It should be noted that in this embodiment and all subsequent embodiments, the dimensions given may be different from those described. For example, the diameter of the cavity control assembly and cavity conditioning slab may be 10 mm or more, and the diameter of the slab may be up to 80 mm or more.

  Still referring to FIG. 1A, a substrate holder 120 and a lower electrode 121 are shown. If present, the lower electrode 121 may be used to couple radio frequency (RF) power to the plasma in the process space 115. For example, the lower electrode 121 may be electrically biased with an RF voltage by transmitting RF power from the RF generator 130 to the lower electrode 121 via the impedance matching network 131 and the RF sensor 135. The RF bias can function to heat the electrodes to generate and / or maintain the plasma. A typical frequency for the RF bias may range from 1 MHz to 100 MHz and is preferably 13.56 MHz. Alternatively, RF power may be applied to the lower electrode 121 at multiple frequencies. Furthermore, the impedance matching network 131 may function to maximize the transfer of RF power to the plasma within the process chamber 110 by suppressing the reflected power. Various network structures and automatic control methods may be utilized. The RF sensor 135 may measure the power level and / or frequency associated with the fundamental signal, harmonic signal, and / or intermodulation signal. In addition, controller 195 is coupled 196 to RF generator 130, impedance matching network 131, and RF sensor 135, and controller 195 includes RF generator 130, impedance matching network 131, and RF sensor 135. EM coupling regions (162a, 162b, 162c) in the EM energy conditioning space 185 and plasma in the process space 115 by using process recipes to set, control and optimize data exchanged between Uniformity may be controlled.

  Within the first microwave resonator system 100 is a pressure control system 190 coupled to the process chamber 110 and configured to exhaust the process chamber 110 as well as control the pressure within the process chamber 110. And an exhaust port 191. Alternatively, the pressure control system 190 and / or the exhaust port 191 may not be required.

  As illustrated in FIG. 1A, the first microwave resonator system 100 may include a first gas supply system 140 coupled to the first supply element 141, and the first supply element 141 may be a process. It may be coupled to one or more first flow elements 142 that may be coupled to the chamber 110. The first flow element 142 is configured to introduce a first process gas into the process space 115 and may include a flow control and / or flow measurement device. In addition, the first microwave resonator system 100 may have a second gas supply system 145 coupled to the second supply element 146, and the second supply element 146 can be coupled to the process chamber 110. One or more second flow elements 147 may be coupled. The second flow element 147 is configured to introduce a second process gas into the process space 115 and may include a flow control and / or flow measurement device. Alternatively, the second gas supply system 145, the second gas supply element 146, and / or the second flow element 147 may not be required.

During dry plasma etching, the process gas may include an etchant, a passivant, or an inert gas, or a mixture thereof. For example, when plasma etching a dielectric film, such as silicon oxide (SiO _x ) or silicon nitride (Si _x N _y ), the plasma etching gas composition is typically a fluorocarbon-based chemical (C _x F _y ). - for example _{C 4 F 8, C 5 F} 8, C 3 F 6, C 4 F 6, CF 4 or the like - include, and / or a fluorohydrocarbon-based chemicals _{(C x H y F z)} - for example CHF ₃ , CH ₂ F _2, etc. and may contain at least one of an inert gas, oxygen, CO, or CO ₂ . In addition, for example, when etching polycrystalline silicon (polysilicon), the plasma etching gas composition typically contains a halogen-containing gas, such as HBr, Cl ₂ , NF ₃ , or SF ₆ , or mixtures thereof. And may contain a fluorohydrocarbon chemical (C _x H _y F _z ) —for example, CHF ₃ , CH ₂ F _2, etc.—and inert gas, oxygen, CO, or CO ₂ or these 2 It may have at least one of two or more mixtures. During plasma deposition, the process gas may include a film forming precursor, a reducing gas, or an inert gas, or a mixture of two or more thereof.

FIG. 1B represents the upper surface of the first resonator assembly according to an embodiment of the present invention. The first resonator subsystem 180 may have a total length (x _T1 ) and a total height (z _T1 ) in the xz plane. For example, the total length (x _T1 ) can vary from about 10 mm to about 500 mm, and the total height (z _T1 ) can vary from about 10 mm to about 1000 mm. It should be noted that in this embodiment and all subsequent embodiments, the dimensions given may be different from those described. For example, the resonator subsystem may have a maximum length of m, ie radius and height.

The upper surface of the first resonator subsystem 180 includes the xz plane of the first control assembly 160a, shown surrounded by the upper surface (dashed line) of the first plasma conditioning slab 161a. The first control assembly 160a may have a first diameter (d _2a ). The first diameter (d _2a ) may vary from about 0.01 mm to about 1 mm. The first plasma conditioning slab 161a may have a second diameter (D _2a ). The second diameter (D _2a ) may vary from about 1 mm to about 10 mm. The first control assembly 160a and the first plasma conditioning slab 161a may have a first xz plane offset (x _1a ). The first xz plane offset (x _1a ) may vary from about 1 mm to about 10 mm. Alternatively, the first control assembly 160a and the first plasma conditioning slab 161a may have different first xz plane offsets (x _1a ). The first control assembly 160a and the first plasma conditioning slab 161a may have a first xz plane offset (z _1a ). The first xz plane offset (z _1a ) may vary from about 1 mm to about 10 mm. Alternatively, the first control assembly 160a and the first plasma conditioning slab 161a may have different first xz plane offsets (z _1a ).

In addition, the top surface of the first resonator subsystem 180 includes the xz plane of the second control assembly 160b, shown surrounded by the top surface (dashed line) of the second plasma conditioning slab 161b. The second control assembly 160b may have a first diameter (d _2b ). The first diameter (d _2b ) may vary from about 0.01 mm to about 1 mm. The second plasma conditioning slab 161b may have a second diameter (D _2b ). The second diameter (D _2b ) may vary from about 1 mm to about 10 mm. The second control assembly 160b and the second plasma conditioning slab 161b may have a second xz plane offset (x _1b ). The second xz plane offset (x _1b ) may vary from about 1 mm to about 10 mm. Alternatively, the second control assembly 160b and the second plasma conditioning slab 161b may have different second xz plane offsets (x _1b ). The second control assembly 160b and the second plasma conditioning slab 161b may have a second xz plane offset (z _1b ). The second xz plane offset (z _1b ) may vary from about 1 mm to about 10 mm. Alternatively, the second control assembly 160b and the first plasma conditioning slab 161b may have different second xz plane offsets (z _1a ).

Furthermore, the upper surface of the first resonator subsystem 180 includes the xz plane of the third control assembly 160c shown surrounded by the upper surface (dashed line) of the third plasma conditioning slab 161c. The third control assembly 160c may have a first diameter (d _2c ). The first diameter (d _2c ) may vary from about 0.01 mm to about 1 mm. The third plasma conditioning slab 161c may have a second diameter (D _2c ). The second diameter (D _2a ) may vary from about 1 mm to about 10 mm. The third control assembly 160c and the third plasma conditioning slab 161c may have a third xz plane offset (x _1c ). The third xz plane offset (x _1c ) may vary from about 1 mm to about 10 mm. Alternatively, the third control assembly 160c and the third plasma conditioning slab 161c may have different third xz plane offsets (x _1c ). The third control assembly 160c and the third plasma conditioning slab 161c may have a third xz plane offset (z _1c ). The third xz plane offset (z _1c ) may vary from about 1 mm to about 10 mm. Alternatively, the third control assembly 160c and the third plasma conditioning slab 161c may have different third xz plane offsets (z _1c ).

FIG. 1B shows the top surface of the resonator walls (182a, 182b, 183, and 184). The resonator wall 182a may have a wall thickness (t _a ). The wall thickness _{(t a)} may vary from about 1mm~ about 5 mm. The resonator wall 182b may have a wall thickness (t _b ). The wall thickness (t _b ) may vary from about 1 mm to about 5 mm. The resonator walls (182a, 182b) may have a wall thickness (t). The wall thickness (t) may vary from about 1 mm to about 5 mm.

The upper surface of the first microwave resonator system 100 includes an xz plan view of the cavity control assembly 155 shown coupled to the upper surface of the cavity tuning slab 156. The cavity control assembly 155 may have a first diameter (d _1aa ). The first diameter (d _1aa ) may vary from about 0.01 mm to about 1 mm. The cavity conditioning slab 156 may have a second diameter (D _1aa ). The second diameter (D _1aa ) may vary from about 1 mm to about 10 mm. Cavity control assembly 155 and cavity adjustment slab 156 may have a first xz plane offset (z _1aa ). The first xz plane offset (z _1aa ) may vary from about 1 mm to about 10 mm.

FIG. 1C shows a side view of the first microwave resonator system 100. The side view shows a yz plan view of a process chamber 110 that can be configured by using a first interface assembly 165a and a plurality of chamber walls 112 coupled to the first interface assembly 165a. Process space 115 may be configured within process chamber 110. For example, the chamber wall 112 may have a wall thickness (t), and the wall thickness (t) may vary between about 1 mm and about 5 mm. The first interface assembly 165a may have a first interface thickness (t _i1 ). The first interface thickness (t _i1 ) may vary from about 1 mm to about 10 mm.

  The side view shows a yz plan view of a first resonator subsystem 180 that may include a first resonator assembly 181 that may be configured with a plurality of resonator walls (182a, 182b, 183, and 184). . For example, the resonator walls (182a, 182b, 183, and 184) may include a dielectric material, such as quartz, and may define a first EM energy conditioning space therein. In addition, one or more resonator sensors 106 may be coupled to the first EM energy conditioning space 185 to obtain first resonator data.

The resonator wall 182a may have a wall thickness (t _a ). The wall thickness _{(t a)} may vary from about 1mm~ about 5 mm. The resonator wall 182b may have a wall thickness (t _b ). The wall thickness (t _b ) may vary from about 1 mm to about 5 mm. The resonator wall 182 may have a wall thickness (t). The wall thickness (t) may vary from about 1 mm to about 5 mm.

In some examples, the first interface assembly 165a may be used to removably couple the first resonator assembly 181 and the process chamber 110. The first interface assembly 165a may have a first interface thickness (t _i1 ). The wall thickness (t _i1 ) may vary from about 1 mm to about 10 mm. Alternatively, the first interface aggregate 165a may not be required or may have a different configuration. The first interface aggregate 165a may include one or more isolation aggregates (164a, 164b, and 164c). Each of the isolation assemblies (164a, 164b, and 164c) may be removably coupled to the lower resonator wall 183 and removably coupled to one or more first interface assemblies 165a. You can do it.

In addition, the second interface assembly 165b may be coupled to the first resonator assembly 181 by using the upper resonator wall 184. The second interface assembly 165b may have a second interface thickness (t _i2 ). The wall thickness (t _i2 ) may vary from about 1 mm to about 10 mm. Alternatively, the second interface aggregate 165b may not be required or may have a different configuration. The second interface aggregate 165b may include one or more control aggregates (160a, 160b, and 160c). Each of the control assemblies (160a, 160b, and 160c) may be removably coupled to the upper resonator wall 184 and removably coupled to the second interface assembly 165b. Alternatively, the control assemblies (160a, 160b, and 160c) may be coupled to the upper resonator wall 184, and the second interface assembly may be omitted.

  The first microwave resonator system 100 may be configured to generate a plasma in the process space 115 as the substrate holder 120 and the substrate move throughout the process space 115. The first microwave resonator system 100 may be configured to process 200 mm substrates, 300 mm substrates, or larger sized substrates. In addition, as will be appreciated by those skilled in the art, the first microwave resonator system 100 can be configured to process annular, square, or rectangular substrates, wafers, or LCDs regardless of size. As such, cylindrical, square, and / or rectangular chambers may be configured. Thus, although aspects of the invention have been described in connection with processing a semiconductor substrate, the invention is not so limited.

  In other embodiments, the first resonator subsystem 180 may have a plurality of resonant cavities (not shown) therein. In other embodiments, the first resonator subsystem 180 may include a plurality of resonator subsystems having one or more resonant cavities therein. In various systems, the first resonator assembly 181 and the first EM energy adjustment space 185 may have a cylindrical shape, a rectangular shape, or a square shape.

  In FIG. 1C, the microwave source 150 is shown coupled to the first resonator assembly 181. Microwave source 150 may be coupled to matching network 152. The matching network 152 may be coupled to the coupling network 154. Alternatively, multiple matching networks (not shown) or multiple coupling networks (not shown) may be coupled to the first resonator subsystem 180. The coupling network 154 may be removably coupled to the upper resonator wall 184 of the first resonator assembly 181 and may be used to provide microwave energy to the first EM energy conditioning space 185. Alternatively, other coupling configurations may be used.

The side view includes a first set of first plasma regulators (170a, 170b, and 170c) that can extend into the process space 115 at a first yz plane position (z _2a-c ), and a second A first set of plasma adjustment rods (175a, 175b, and 175c) that may extend to enter the first EM energy adjustment space 185 at a z _- plane position (z _1a-c ) (170a, 175a), (170b, 175b), and (170c, 175c)) are included in the yz plan view. The first set of isolation assemblies (164a, 164b, and 164c) is a first position defined using (z _2a-c ) in the process space 115, and the plasma adjustment distances (171a, 171b, and 171c). Position the first set of plasma control units (170a, 170b, and 170c) to the first set of plasma control units (170a, 170b, and 170c) until the plasma control distance (171a, 171b, and 171c). It ’s good) For example, the plasma conditioning distances (171a, 171b, and 171c) may vary from about 10 mm to about 400 mm, and may be wavelength dependent and vary from about (λ / 4) to about (10λ).

The first set of EM coupling regions (162a, 162b, and 162c) are set by the first set of EM coupling distances (176a, 176b, and 176c) from the lower resonator wall 183 in the first EM energy adjustment space 185. Good and the first set of EM adjustments (175a, 175b, and 175c) may extend to enter the first set of EM coupling regions (162a, 162b, and 162c). The first set of EM adjusters (175a, 175b, and 175c) may obtain adjustable microwave energy from the first set of EM coupling regions (162a, 162b, and 162c). Adjustable microwave energy is transferred to the process space 115 as plasma control energy that can be controlled at the first z-plane position (x _2a-c ) by using the first set of plasma control units (170a, 170b, and 170c). Can be transported. The first set of EM coupling regions (162a, 162b, and 162c) includes an adjustable electric field region, an adjustable magnetic field region, a maximum field region, a maximum voltage region, a maximum energy region, or a maximum current region, or a combination thereof. May be included. For example, the first set of EM coupling distances (176a, 176b, and 176c) may vary from about 0.01 mm to about 10 mm, and the first set of EM coupling distances (176a, 176b, and 176c) is a wavelength. And can vary from about (λ / 4) to about (10λ).

  The first set of plasma conditioning slabs (161a, 161b, and 161c) are coupled to the first set of control assemblies (160a, 160b, and 160c) and the first set of control assemblies (160a, 160b, And 160c) in the first EM energy adjustment space 185, the first set of plasma adjustment slabs (161a, 161b, and 161c) is a first set with respect to the first set of EM adjustment units (175a, 175b, and 175c). EM adjustment distances (177a, 177b, and 177c). The first set of control aggregates (160a, 160b, and 160c) and the first set of plasma conditioning slabs (161a, 161b, and 161c) are moved from the first set of EM coupling regions (162a, 162b, and 162c). Microwave energy coupled to a first set of EM adjustments (175a, 175b, and 175c) of a set of plasma adjustment rods ((170a, 175a), (170b, 175b), and (170c, 175c)). Can be used to optimize. For example, the first set of EM adjustment distances (177a, 177b, and 177c) is equal to the first set of EM adjustment portions (175a, 175b, and 175c) in the first EM energy adjustment space 185 and the first set of plasma adjustment slabs. (161a, 161b, and 161c), and the first set of EM adjustment distances (177a, 177b, and 177c) may vary from about 0.01 mm to about 1 mm.

The first set of plasma conditioning rods ((170a, 175a), (170b, 175b), and (170c, 175c)) may include a dielectric material and may have a first diameter (d _1a ). . The first diameter (d _1a ) may vary from about 0.01 mm to about 1 mm. The first set of isolation assemblies (164a, 164b, and 164c) may have a first diameter (D _1a ). The first diameter (D _1a ) may vary from about 1 mm to about 10 mm.

A first set of EM adjusters (175a, 175b, and 175c), a first set of EM coupling regions (162a, 162b, and 162c), a first set of control aggregates (160a, 160b, and 160c), and first The set of plasma conditioning slabs (161a, 161b, and 161c) may have a z-plane offset (z _1a-c ). For example, the z-plane offset (z _1a-c ) may be set for the lower resonator wall 183 and may vary from about (λ / 4) to about (10λ) depending on the wavelength. The first set of control aggregates (160a, 160b, and 160c) may include a dielectric material and have a cylindrical configuration and a diameter (d _2a-c ) that can vary from about 1 mm to about 5 mm. Good. The first set of plasma conditioning slabs (161a, 161b, and 161c) may include a dielectric material and may have a diameter (D _2a-c ). The diameter (D _2a-c ) may vary from about 1 mm to about 10 mm.

  As illustrated in FIG. 1C, the control aggregates (160a, 160b, and 160c) may be coupled at 196 to the controller 195. The controller 195 sets, controls, and optimizes the EM adjustment distances (177a, 177b, and 177c) so that the EM coupling regions (162a, 162b, and 162c) and the process space 115 in the EM energy adjustment space 185 are set. The uniformity of the plasma inside may be controlled. Controller 195 may be coupled to microwave source 150, matching network 152, and coupling network 154 at 196. The controller 195 uses process recipes to set, control, and optimize the microwave source 150, the matching network 152, and the coupling network 154 so that the EM coupling regions (162a, 162b, and 162c) in the EM energy conditioning space 185 are used. ) And the uniformity of the plasma in the process space 115 may be controlled. For example, the microwave source 150 may operate at a frequency between about 500 MHz and about 5000 MHz. In addition, controller 195 may be coupled to resonator sensor 106 and process sensor 107 at 196, and controller 195 sets, controls, and optimizes data from resonator sensor 106 and process sensor 107. By using the process recipe, the uniformity of the plasma in the EM coupling regions (162a, 162b, and 162c) in the EM energy adjustment space 185 and the process space 115 may be controlled.

Sides of the first microwave resonator system 100 include a yz plan view of the cavity control assembly 155 and a yz plan view of the cavity tuning slab 156. The cavity control assembly 155 may have a first diameter (d _1aa ). The first diameter (d _1aa ) may vary from about 0.01 mm to about 1 mm. The cavity conditioning slab 156 may have a second diameter (D _1aa ). The second diameter (D _1aa ) may vary from about 1 mm to about 10 mm. The cavity control assembly 155 and cavity adjustment slab 156 may have a first xy plane offset (y _1aa ). The first xy plane offset (y _1aa ) may vary from about 1 mm to about 10 mm.

  Still referring to FIG. 1C, the side surfaces of the substrate holder 120 and the lower electrode 121 are shown. If present, the lower electrode 121 may be used to couple radio frequency (RF) power to the plasma in the process space 115. For example, the lower electrode 121 may be electrically biased with an RF voltage by transmitting RF power from the RF generator 130 to the lower electrode 121 via the impedance matching network 131 and the RF sensor 135. The RF bias can function to heat the electrodes to generate and / or maintain the plasma. A typical frequency for the RF bias may range from 1 MHz to 100 MHz and is preferably 13.56 MHz. Alternatively, RF power may be applied to the lower electrode 121 at multiple frequencies. Furthermore, the impedance matching network 131 may function to maximize the transfer of RF power to the plasma within the process chamber 110 by suppressing the reflected power. Various network structures and automatic control methods may be utilized. The RF sensor 135 may measure the power level and / or frequency associated with the fundamental signal, harmonic signal, and / or intermodulation signal. In addition, controller 195 is coupled 196 to RF generator 130, impedance matching network 131, and RF sensor 135, and controller 195 includes RF generator 130, impedance matching network 131, and RF sensor 135. EM coupling regions (162a, 162b, 162c) in the EM energy conditioning space 185 and plasma in the process space 115 by using process recipes to set, control and optimize data exchanged between Uniformity may be controlled.

  A side of the first microwave resonator system 100 is coupled to the process chamber 110 and configured not only to control the pressure in the process chamber 110 but also to evacuate the process chamber 110 and It may have a yz plane of the discharge port 191. Alternatively, the pressure control system 190 and / or the exhaust port 191 may not be required.

  As shown in FIG. 1C, the side surface may have a yz plane of the first gas supply system 140, the first supply element 141, the first flow element 142, and the process chamber 110. The first flow element 142 may be configured to introduce a first process gas into the process space 115 around the process space 115. In addition, the side surface may have a yz plane of the second gas supply system 145, the second supply element 146, and the second flow element 147. The second flow element 147 may be configured to introduce a second process gas into the process space 115 around the process space 115.

During dry plasma etching, the process gas may include an etchant, a passivant, or an inert gas, or a mixture thereof. For example, when plasma etching a dielectric film, such as silicon oxide (SiO _x ) or silicon nitride (Si _x N _y ), the plasma etching gas composition is typically a fluorocarbon-based chemical (C _x F _y ). - for example _{C 4 F 8, C 5 F} 8, C 3 F 6, C 4 F 6, CF 4 or the like - include, and / or a fluorohydrocarbon-based chemicals _{(C x H y F z)} - for example CHF ₃ , CH ₂ F _2, etc. and may contain at least one of an inert gas, oxygen, CO, or CO ₂ . In addition, for example, when etching polycrystalline silicon (polysilicon), the plasma etching gas composition typically contains a halogen-containing gas, such as HBr, Cl ₂ , NF ₃ , or SF ₆ , or mixtures thereof. And may contain a fluorohydrocarbon chemical (C _x H _y F _z ) —for example, CHF ₃ , CH ₂ F _2, etc.—and inert gas, oxygen, CO, or CO ₂ or these 2 It may have at least one of two or more mixtures. During plasma deposition, the process gas may include a film forming precursor, a reducing gas, or an inert gas, or a mixture of two or more thereof.

  FIG. 2A represents a second microwave resonator system 200 according to an embodiment of the present invention. The second microwave resonator system 200 may be used in a dry plasma etching system or a plasma deposition system. The second microwave resonator system 200 may include a “movable” resonator subsystem 280 that is coupled to the “variable” process space 215 using one or more baffle members 262. The “movable” resonator subsystem 280 may have a second resonator assembly 281 therein that is movable relative to the top of the process space 215. One or more displacement systems 286 may be coupled to the “movable” resonator subsystem 280 using one or more baffle assemblies 287. The displacement system 286 may be used to move the “movable” resonator subsystem 280 vertically by a displacement distance 289 relative to the top of the process space 215. For example, the displacement distance 289 may vary from about 1 mm (millimeters) to about 10 mm. Alternatively, the second microwave resonator system 200 may have a different configuration.

FIG. 2A shows a front view of the second microwave resonator system 200. The front view shows an xy plan view of a process chamber 210 that can be configured by using a first interface assembly 265a and a plurality of chamber walls 210 coupled to the first interface assembly 265a. Process space 215 may be configured within process chamber 210. For example, the chamber wall 212 may have a wall thickness (t), and the wall thickness (t) may vary between about 1 mm and about 5 mm. The first interface assembly 265a may have a first interface thickness (t _i1 ). The first interface thickness (t _i1 ) may vary from about 1 mm to about 10 mm.

  The front view of the second resonator subsystem 280 may include a second resonator assembly 281 having a plurality of resonator walls (282a, 282b, 283, and 284) defining a second EM energy conditioning space 285 therein. An xy plan view is shown. For example, the resonator walls (282a, 282b, 283, and 284) may include a dielectric material such as quartz. In addition, one or more resonator sensors 206 may be coupled to the second EM energy conditioning space 285 to obtain second resonator data.

The resonator wall 282a may have a wall thickness (t _a ). The wall thickness _{(t a)} may vary from about 1mm~ about 5 mm. The resonator wall 282b may have a wall thickness (t _b ). The wall thickness (t _b ) may vary from about 1 mm to about 5 mm. The resonator wall 283 may have a wall thickness (t). The wall thickness (t) may vary from about 1 mm to about 5 mm.

In some examples, the second interface assembly 265a may be used to removably couple the second resonator assembly 281 and the process chamber 210. The second interface assembly 265a may have a first interface thickness (t _i1 ). The wall thickness (t _i1 ) may vary from about 1 mm to about 10 mm. Alternatively, the second interface aggregate 265a may not be required or may have a different configuration. The second interface assembly 265a may include one or more isolation assemblies (264a, 264b, and 264c). Each of the isolation assemblies (264a, 264b, and 264c) may be removably coupled to the lower resonator wall 283 and removably coupled to one or more first interface assemblies. Good.

In addition, the second interface assembly 265b may be coupled to the second resonator assembly 281 by using the upper resonator wall 284. The second interface assembly 265b may have a second interface thickness (t _i2 ). The wall thickness (t _i2 ) may vary from about 1 mm to about 10 mm. Alternatively, the second interface aggregate 265b may not be required or may have a different configuration. The second interface aggregate 265b may include one or more control aggregates (260a, 260b, and 260c). Each of the control assemblies (260a, 260b, and 260c) may be removably coupled to the upper resonator wall 284 and removably coupled to the second interface assembly 265b. Alternatively, control assemblies 260a, 260b, and 260c) may be coupled to upper resonator wall 284, and the second interface assembly may be omitted.

  The second microwave resonator system 200 may be configured to generate plasma in the process space 215 as the substrate holder 220 and the substrate move throughout the process space 215. The second microwave resonator system 200 may be configured to process 200 mm substrates, 300 mm substrates, or larger sized substrates. In addition, as will be appreciated by those skilled in the art, the second microwave resonator system 200 can be configured to process annular, square, or rectangular substrates, wafers, or LCDs regardless of size. As such, cylindrical, square, and / or rectangular chambers may be configured. Thus, although aspects of the invention have been described in connection with processing a semiconductor substrate, the invention is not so limited.

  In other embodiments, the second resonator subsystem 280 may have a plurality of resonant cavities (not shown) therein. In other embodiments, the second resonator subsystem 280 may include a plurality of resonator subsystems having one or more resonant cavities therein. In various systems, the second resonator assembly 281 and the second EM energy conditioning space 285 may have a cylindrical shape, a rectangular shape, or a square shape.

  In some embodiments, the microwave source 250 may be coupled to the second resonator assembly 281. In addition, one or more RF sources (not shown) may be coupled to the second resonator subsystem 280. Microwave source 250 may be coupled to matching network 252. The matching network 252 may be coupled to the coupling network 254. Alternatively, multiple matching networks (not shown) or multiple coupling networks (not shown) may be coupled to the second resonator subsystem 280. The coupling network 254 may be removably coupled to the upper resonator wall 284 of the second resonator assembly 281 and may be used to provide microwave energy to the second EM energy conditioning space 285. Alternatively, other coupling configurations may be used.

The first plasma adjustment rod (270a, 275a) may extend to enter the process space 215 at the first position (x _2a ), and the second EM energy at the first position (x _1a ). A first EM energy adjustment unit 275a that may extend to enter the adjustment space 285 may be included. The first isolation assembly 264a is configured to position the first plasma adjustment unit 270a at the first plasma adjustment distance 271a at the first position defined using (x _2a ) in the process space 215 (first plasma). The first plasma adjustment unit 270a may be extended to the adjustment distance 271a). For example, the first plasma adjustment distance 271a may vary from about 10 mm to about 400 mm, and the first plasma adjustment distance 271a may be wavelength dependent and may vary from about (λ / 4) to about (10λ).

The first EM coupling region 262a may be set at a first EM coupling distance 276a from the lower resonator wall 283 in the second EM energy tuning space 285, and the first EM tuning unit 275a extends to enter the first EM coupling region 262a. obtain. The first EM adjustment unit 275a may obtain first adjustable microwave energy from the first EM coupling region 262a. The first microwave energy may be transferred to the process space 215 as the first plasma adjustment energy at the first position (x _2a ) by using the first plasma adjustment unit 270a. The first EM coupling region 262a may include an adjustable electric field region, an adjustable magnetic field region, a maximum field region, a maximum voltage region, a maximum energy region, or a maximum current region, or a combination thereof. For example, the first EM coupling distance 276a may vary from about 0.01 mm to about 10 mm, and the first EM coupling distance 276a may be wavelength dependent and vary from about (λ / 4) to about (10λ).

  The first plasma conditioning slab 261a may be coupled to the first control assembly 260a, and the first control assembly 260a may be coupled to the first plasma regulation rod (270a, 275a) in the second EM energy regulation space 285. It may be used to move the first plasma adjustment slab 261a by the first EM adjustment distance 277a with respect to the 1EM adjustment unit 275a. The first control assembly 260a and the first plasma regulation slab 261a are used to optimize the microwave energy coupled from the first EM coupling region 262a to the first EM regulation unit 275a of the first plasma regulation rod (270a, 275a). May be used. For example, the first EM adjustment distance 277a may be set between the first EM adjustment unit 275a and the first plasma adjustment slab 261a in the second EM energy adjustment space 285, and the first EM adjustment distance 277a may be about 0.01 mm to about 1.25 mm. It may vary between about 1 mm.

The first plasma control rod (270a, 275a) may have a first diameter (d _1a ). The first diameter (d _1a ) may vary from about 0.01 mm to about 1 mm. The first isolation assembly 264a may have a first diameter (D _1a ). The first diameter (D _1a ) may vary from about 1 mm to about 10 mm.

The first EM adjustment unit 275a, the first EM coupling region 262a, the first control assembly 260a, and the first plasma adjustment slab 261a may have a first x plane offset (x _1a ). For example, the first x-plane offset (x _1a ) may be set with respect to the resonator wall 282b and may vary from about (λ / 4) to about (10λ) depending on the wavelength. The first control assembly 260a may have a cylindrical configuration and a diameter (d _2a ) that can vary from about 1 mm to about 5 mm. The first plasma conditioning slab 261a may have a diameter (D _2a ). The diameter (D _2a ) may vary from about 1 mm to about 10 mm.

The second plasma adjustment rods (270b, 275b) may extend to enter the process space 215 at the second position (x _2b ), and the second EM energy at the second position (x _1b ). A second EM energy adjustment unit 275b that may extend to enter the adjustment space 285 may be included. The second isolation assembly 264b is positioned at the second plasma adjustment distance 271b at the second position defined by using (x _2b ) in the process space 215 (second plasma). The second plasma adjustment unit 270b may be extended to the adjustment distance 271b). For example, the second plasma adjustment distance 271b may vary from about 10 mm to about 400 mm, and the second plasma adjustment distance 271b may be wavelength dependent and may vary from about (λ / 4) to about (10λ).

The second EM coupling region 262b may be set at a second EM coupling distance 276b from the lower resonator wall 283 in the second EM energy tuning space 285, and the second EM tuning unit 275b extends to enter the second EM coupling region 262b. obtain. The second EM adjuster 275b may obtain second adjustable microwave energy from the second EM coupling region 262b. The second microwave energy may be transferred to the process space 215 as the second plasma adjustment energy at the second position (x _2b ) by using the second plasma adjustment unit 270b. The second EM coupling region 262b may include an adjustable electric field region, an adjustable magnetic field region, a maximum field region, a maximum voltage region, a maximum energy region, or a maximum current region, or a combination thereof. For example, the second EM coupling distance 276b may vary from about 0.01 mm to about 10 mm, and the second EM coupling distance 276b may be wavelength dependent and vary from about (λ / 4) to about (10λ).

  The second plasma conditioning slab 261b may be coupled to the second control assembly 260b, and the second control assembly 260b is within the second EM energy regulation space 285 relative to the second plasma regulation rod (270b, 275b). The second plasma adjustment slab 261b may be used to move the 263b by the second EM adjustment distance 277b. The second control assembly 260b and the second plasma regulation slab 261b are used to optimize the microwave energy coupled from the second EM coupling region 262b to the second EM regulation part 275b of the second plasma regulation rod (270b, 275b). May be used. For example, the second EM adjustment distance 277b may be set between the second EM adjustment unit 275b and the second plasma adjustment slab 261b in the second EM energy adjustment space 285, and the second EM adjustment distance 277b is about 0.01 mm to about 2.8 mm. It may vary between about 1 mm.

The second plasma control rod (270b, 275b) may have a second diameter (d _1b ). The second diameter (d _1b ) may vary from about 0.01 mm to about 1 mm. The second isolation assembly 264b may have a second diameter (D _1b ). The second diameter (D _1b ) may vary from about 1 mm to about 10 mm.

The second EM adjustment unit 275b, the second EM coupling region 262b, the second control assembly 260b, and the second plasma adjustment slab 261b may have a second x plane offset (x _1b ). For example, the first x-plane offset (x _1b ) may be set for the resonator wall 282b and may vary from about (λ / 4) to about (10λ) depending on the wavelength. The second control assembly 260b may have a cylindrical configuration and a diameter (d _2b ) that can vary from about 1 mm to about 5 mm. The second plasma conditioning slab 261b may have a diameter (D _2b ). The diameter (D _2b ) may vary from about 1 mm to about 10 mm.

The third plasma adjusting rod (270c, 275c), the third position _{(x 2c)} may extend so as to enter into the process space 215 in the third plasma adjusting portion 170c, and the second 2EM energy at a third position _{(x 1c)} A third EM energy adjustment unit 275c that may extend to enter the adjustment space 285 may be included. The third isolation assembly 264c has a third position defined by using (x _2c ) in the process space 215 and positions the third plasma adjustment unit 270c at the third plasma adjustment distance 271c (third plasma). The third plasma adjustment unit 270c may be extended to the adjustment distance 271c). For example, the third plasma adjustment distance 271c may vary from about 10 mm to about 400 mm, and the third plasma adjustment distance 271c may be wavelength dependent and may vary from about (λ / 4) to about (10λ).

The third EM coupling region 262c may be set at a third EM coupling distance 276c from the lower resonator wall 283 defining the second EM energy tuning space 285, and the third EM tuning unit 275c may enter the third EM coupling region 262c. Can extend. The third EM adjustment unit 275c may obtain third adjustable microwave energy from the third EM coupling region 262c. The third microwave energy may be transferred to the process space 215 as the third plasma adjustment energy at the third position (x _2c ) by using the third plasma adjustment unit 270c. The third EM coupling region 262c may include an adjustable electric field region, an adjustable magnetic field region, a maximum field region, a maximum voltage region, a maximum energy region, or a maximum current region, or a combination thereof. For example, the third EM coupling distance 276c may vary from about 0.01 mm to about 10 mm, and the third EM coupling distance 276c may be wavelength dependent and vary from about (λ / 4) to about (10λ).

  The third plasma conditioning slab 261c may be coupled to the third control assembly 260c, and the third control assembly 260c is within the second EM energy regulation space 285 relative to the third plasma regulation rod (270c, 275c). The third plasma adjustment slab 261c may be used to move the third EM adjustment distance 277c. The third control assembly 260c and the third plasma regulation slab 261c are used to optimize the microwave energy coupled from the third EM coupling region 262a to the third EM regulation part 275c of the third plasma regulation rod (270c, 275c). May be used. For example, the third EM adjustment distance 277c may be set between the third EM adjustment unit 275c and the third plasma adjustment slab 261c in the second EM energy adjustment space 285, and the third EM adjustment distance 277c may be about 0.01 mm to about 2.7 mm. It may vary between about 1 mm.

The third plasma control rod (270c, 275c) may have a third diameter (d _1c ). The third diameter (d _1c ) may vary from about 0.01 mm to about 1 mm. The third isolation assembly 264c may have a first diameter (D _1c ). The third diameter (D _1c ) may vary from about 1 mm to about 10 mm.

The third EM adjustment unit 275c, the second EM coupling region 262c, the third control assembly 260c, and the third plasma adjustment slab 261c may have a third x plane offset (x _1c ). For example, the third x-plane offset (x _1c ) may be set with respect to the resonator wall 282b and may vary from about (λ / 4) to about (10λ) depending on the wavelength. The third control assembly 260c may have a cylindrical configuration and a diameter (d _2c ) that can vary from about 1 mm to about 5 mm. The third plasma control slab 261c may have a diameter (D _2c ). The diameter (D _2c ) may vary from about 1 mm to about 10 mm.

  The control aggregates (260a, 260b, and 260c) may be coupled to the controller 295 at 296. The controller 295 sets, controls, and optimizes the EM adjustment distances (277a, 277b, and 277c) so that the EM coupling regions (262a, 262b, and 262c) and the process space within the EM energy adjustment space 285. The uniformity of the plasma within 215 may be controlled. Controller 295 may be coupled to microwave source 250, matching network 252, and coupling network 254 at 296. The controller 295 uses EM coupling regions (262a, 262b, and 262c) in the EM energy conditioning space 185 by using a process recipe that sets, controls, and optimizes the microwave source 250, matching network 252, and coupling network 254. ) And the uniformity of the plasma in the process space 215 may be controlled. For example, the microwave source 250 may operate at a frequency between about 500 MHz and about 5000 MHz. In addition, controller 295 may be coupled to resonator sensor 206 and process sensor 207 at 296, and controller 295 may set, control, and optimize data from resonator sensor 206 and process sensor 207. By using the process recipe, the EM coupling regions (262a, 262b, and 262c) in the EM energy conditioning space 285 and the plasma uniformity in the process space may be controlled.

The front surface of the second microwave resonator system 200 includes an xy plan view of the cavity control assembly 255 that is illustrated coupled to the front surface of the cavity conditioning slab 256. The cavity control assembly 255 may have a first diameter (d _1aa ). The first diameter (d _1aa ) may vary from about 0.01 mm to about 1 mm. The cavity conditioning slab 256 may have a second diameter (D _1aa ). The second diameter (D _1aa ) may vary from about 1 mm to about 10 mm. Cavity control assembly 255 and cavity conditioning slab 256 may have a y-plane offset (y _1aa ). The first xy plane offset (y _1aa ) may vary from about 1 mm to about 10 mm.

  The cavity control assembly 255 may be used to move the cavity conditioning slab 256 within the first EM energy conditioning space 285 by a second cavity accommodation distance 258. The controller 295 may be coupled to the cavity control assembly 255 at 296. The controller 295 may control and maintain plasma uniformity in the process space 215 in real time by using a process recipe that sets, controls, and optimizes the cavity adjustment distance 258. For example, the second cavity adjustment distance 258 may vary from about 0.01 mm to about 10 mm, and the second cavity adjustment distance 258 may be wavelength dependent and vary from about (λ / 4) to about (10λ). good.

  Still referring to FIG. 2A, a substrate holder 220 and a lower electrode 221 are shown. If present, the lower electrode 221 may be used to couple radio frequency (RF) power to the plasma in the process space 215. For example, the lower electrode 221 may be electrically biased with an RF voltage by transmitting RF power from the RF generator 230 to the lower electrode 221 via the impedance matching network 231 and the RF sensor 235. The RF bias can function to heat the electrodes to generate and / or maintain the plasma. A typical frequency for the RF bias may range from 1 MHz to 100 MHz and is preferably 13.56 MHz. Alternatively, RF power may be applied to the lower electrode 221 at multiple frequencies. Furthermore, the impedance matching network 231 may function to maximize the transfer of RF power to the plasma within the process chamber 210 by suppressing reflected power. Various network structures and automatic control methods may be utilized. The RF sensor 235 may measure the power level and / or frequency associated with the fundamental signal, harmonic signal, and / or intermodulation signal. In addition, controller 295 is coupled to RF generator 230, impedance matching network 231 and RF sensor 235 at 296, and controller 295 includes RF generator 230, impedance matching network 231 and RF sensor 235. By using a process recipe that sets, controls, and optimizes the data exchanged between the EM coupling regions (262a, 262b, 262c) in the EM energy conditioning space 285 and the uniformity of the plasma in the process space You can control sex.

  Some of the second microwave resonator systems 200 are coupled to the process chamber 210 and configured to exhaust the process chamber 210 as well as control the pressure within the process chamber 210. And a discharge port 291 may be provided. Alternatively, pressure control system 290 and / or exhaust port 291 may not be required.

  As shown in FIG. 2A, the second microwave resonator system 200 may include a first gas supply system 240 coupled to the first supply element 241 and the first supply element 241 may be a process. It may be coupled to one or more flow elements 242 that can be coupled to the chamber 210. The flow element 242 is configured to introduce a first process gas into the process space 215 and may include a flow control and / or flow measurement device. In addition, the second plasma processing system 200 may include a second gas supply system 245 coupled to the second supply element 246, and the second supply element 246 is one that can be coupled to the process chamber 210. It may be coupled to the second flow element 247 described above. Second flow element 247 is configured to introduce a second process gas into process space 215 and may include a flow control and / or flow measurement device. Alternatively, the second gas supply system 245, the second gas supply element 246, and / or the second flow element 247 may not be required.

During dry plasma etching, the process gas may include an etchant, a passivant, or an inert gas, or a mixture thereof. For example, when plasma etching a dielectric film, such as silicon oxide (SiO _x ) or silicon nitride (Si _x N _y ), the plasma etching gas composition is typically a fluorocarbon-based chemical (C _x F _y ). - for example _{C 4 F 8, C 5 F} 8, C 3 F 6, C 4 F 6, CF 4 or the like - include, and / or a fluorohydrocarbon-based chemicals _{(C x H y F z)} - for example CHF ₃ , CH ₂ F _2, etc. and may contain at least one of an inert gas, oxygen, CO, or CO ₂ . In addition, for example, when etching polycrystalline silicon (polysilicon), the plasma etching gas composition typically contains a halogen-containing gas, such as HBr, Cl ₂ , NF ₃ , or SF ₆ , or mixtures thereof. And may contain a fluorohydrocarbon chemical (C _x H _y F _z ) —for example, CHF ₃ , CH ₂ F _2, etc.—and inert gas, oxygen, CO, or CO ₂ or these 2 It may have at least one of two or more mixtures. During plasma deposition, the process gas may include a film forming precursor, a reducing gas, or an inert gas, or a mixture of two or more thereof.

FIG. 2B shows the upper surface of the second resonator assembly according to an embodiment of the present invention. The second resonator assembly 281 may have a total length (x _T1 ) and a total height (z _T1 ) in the xz plane. For example, the total length (x _T1 ) can vary from about 10 mm to about 500 mm, and the total height (z _T1 ) can vary from about 10 mm to about 1000 mm.

The top surface of the second resonator subsystem 280 includes the xz plane of the first control assembly 260a, shown surrounded by the top surface (dashed line) of the first plasma conditioning slab 261a. The first control assembly 260a may have a first diameter (d _2a ). The first diameter (d _2a ) may vary from about 0.01 mm to about 1 mm. The first plasma conditioning slab 261a may have a second diameter (D _2a ). The second diameter (D _2a ) may vary from about 1 mm to about 10 mm. The first control assembly 260a and the first plasma conditioning slab 261a may have a first x plane offset (x _1a ). The first x plane offset (x _1a ) may vary from about 1 mm to about 10 mm. Alternatively, the first control assembly 260a and the first plasma conditioning slab 261a may have different first x plane offsets (x _1a ). The first control assembly 260a and the first plasma conditioning slab 261a may have a first z-plane offset (z _1a ). The first z-plane offset (z _1a ) may vary from about 1 mm to about 10 mm. Alternatively, the first control assembly 260a and the first plasma conditioning slab 261a may have different first xz plane offsets (z _1a ).

In addition, the top surface of the second resonator subsystem 280 includes the xz plane of the second control aggregate 260b shown shown surrounded by the top surface (dashed line) of the second plasma conditioning slab 261b. The second control aggregate 260b may have a first diameter (d _2b ). The first diameter (d _2b ) may vary from about 0.01 mm to about 1 mm. The second plasma conditioning slab 261b may have a second diameter (D _2b ). The second diameter (D _2b ) may vary from about 1 mm to about 10 mm. The second control assembly 260b and the second plasma conditioning slab 261b may have a second x plane offset (x _1b ). The second x plane offset (x _1b ) may vary from about 1 mm to about 10 mm. Alternatively, the second control assembly 260b and the second plasma conditioning slab 261b may have different second x plane offsets (x _1b ). The second control assembly 260b and the second plasma conditioning slab 261b may have a second z-plane offset (z _1b ). The second z-plane offset (z _1b ) may vary from about 1 mm to about 10 mm. Alternatively, the second control assembly 260b and the first plasma conditioning slab 261b may have different second z-plane offsets (z _1a ).

Further, the top surface of the second resonator subsystem 280 includes the xz plane of the third control assembly 260c shown as surrounded by the top surface (dashed line) of the third plasma conditioning slab 261c. The third control assembly 260c may have a first diameter (d _2c ). The first diameter (d _2c ) may vary from about 0.01 mm to about 1 mm. The third plasma conditioning slab 261c may have a second diameter (D _2c ). The second diameter (D _2a ) may vary from about 1 mm to about 10 mm. The third control assembly 260c and the third plasma conditioning slab 261c may have a third x plane offset (x _1c ). The third x plane offset (x _1c ) may vary from about 1 mm to about 10 mm. Alternatively, the third control assembly 260c and the third plasma conditioning slab 261c may have different third x plane offsets (x _1c ). The third control assembly 260c and the third plasma conditioning slab 261c may have a third z-plane offset (z _1c ). The third z-plane offset (z _1c ) may vary from about 1 mm to about 10 mm. Alternatively, the third control assembly 260c and the third plasma conditioning slab 261c may have different third z-plane offsets (z _1c ).

FIG. 2B shows the top surface of the resonator walls (282a, 282b, 283, and 284). The resonator wall 282a may have a wall thickness (t _a ). The wall thickness _{(t a)} may vary from about 1mm~ about 5 mm. The resonator wall 282b may have a wall thickness (t _b ). The wall thickness (t _b ) may vary from about 1 mm to about 5 mm. The resonator walls (282a, 282b) may have a wall thickness (t). The wall thickness (t) may vary from about 1 mm to about 5 mm.

The top surface of the second microwave resonator system 200 includes an xz plan view of the cavity control assembly 255 that is illustrated coupled to the top surface of the cavity tuning slab 256. The cavity control assembly 255 may have a first diameter (d _1aa ). The first diameter (d _1aa ) may vary from about 0.01 mm to about 1 mm. The cavity conditioning slab 256 may have a second diameter (D _1aa ). The second diameter (D _1aa ) may vary from about 1 mm to about 10 mm. Cavity control assembly 255 and cavity adjustment slab 256 may have a first y-plane offset (y _1aa ). The first y plane offset (y _1aa ) may vary from about 1 mm to about 10 mm.

FIG. 2C shows a side view of the second microwave resonator system 200. The side view shows a yz plan view of a process chamber 210 that can be configured by using a first interface assembly 265a and a plurality of chamber walls 212 coupled to the first interface assembly 265a. Process space 215 may be configured within process chamber 210. For example, the chamber wall 212 may have a wall thickness (t), and the wall thickness (t) may vary between about 1 mm and about 5 mm. The first interface assembly 212a may have a first interface thickness (t _i1 ). The first interface thickness (t _i1 ) may vary from about 1 mm to about 10 mm.

  The side view shows a yz plan view of a second resonator subsystem 280 that may include a second resonator assembly 281 that may be configured with a plurality of resonator walls (282a, 282b, 283, and 284). . For example, the resonator walls (282a, 282b, 283, and 284) may include a dielectric material, such as quartz, and may define a second EM energy conditioning space therein. In addition, one or more resonator sensors 206 may be coupled to the first EM energy conditioning space 285 to obtain first resonator data.

The resonator wall 282a may have a wall thickness (t _a ). The wall thickness _{(t a)} may vary from about 1mm~ about 5 mm. The resonator wall 282b may have a wall thickness (t _b ). The wall thickness (t _b ) may vary from about 1 mm to about 5 mm. The resonator wall 282 may have a wall thickness (t). The wall thickness (t) may vary from about 1 mm to about 5 mm.

In some examples, the first interface assembly 265a may be used to removably couple the second resonator assembly 281 and the process chamber 210. The first interface assembly 265a may have a first interface thickness (t _i1 ). The wall thickness (t _i1 ) may vary from about 1 mm to about 10 mm. Alternatively, the first interface aggregate 265a may not be required or may have a different configuration. The first interface assembly 265a may include one or more isolation assemblies (264a, 264b, and 264c). Each of the isolation assemblies (264a, 264b, and 264c) may be removably coupled to the lower resonator wall 283 and removably coupled to one or more first interface assemblies. Good.

In addition, the second interface assembly 265b may be coupled to the first resonator assembly 281 by using the upper resonator wall 284. The second interface assembly 265b may have a second interface thickness (t _i2 ). The wall thickness (t _i2 ) may vary from about 1 mm to about 10 mm. Alternatively, the second interface aggregate 265b may not be required or may have a different configuration. The second interface aggregate 265b may include one or more control aggregates (260a, 260b, and 260c). Each of the control assemblies (260a, 260b, and 260c) may be removably coupled to the upper resonator wall 284 and removably coupled to the second interface assembly 265b. Alternatively, the control aggregates (260a, 260b, and 260c) may be coupled to the upper resonator wall 284 and the second interface aggregate may be omitted.

  The second microwave resonator system 200 may be configured to generate plasma in the process space 215 as the substrate holder 220 and the substrate move throughout the process space 215. The second microwave resonator system 200 may be configured to process 200 mm substrates, 300 mm substrates, or larger sized substrates. In addition, as will be appreciated by those skilled in the art, the second microwave resonator system 200 can be configured to process annular, square, or rectangular substrates, wafers, or LCDs regardless of size. As such, cylindrical, square, and / or rectangular chambers may be configured. Thus, although aspects of the invention have been described in connection with processing a semiconductor substrate, the invention is not so limited.

  In other embodiments, the second resonator subsystem 280 may have a plurality of resonant cavities (not shown) therein. In other embodiments, the second resonator subsystem 280 may include a plurality of resonator subsystems having one or more resonant cavities therein. In various systems, the second resonator assembly 281 and the second EM energy conditioning space 285 may have a cylindrical shape, a rectangular shape, or a square shape.

  In FIG. 2C, the microwave source 250 is shown coupled to the second resonator assembly 281. Microwave source 250 may be coupled to matching network 252. The matching network 252 may be coupled to the coupling network 254. Alternatively, multiple matching networks (not shown) or multiple coupling networks (not shown) may be coupled to the second resonator subsystem 280. The coupling network 254 may be removably coupled to the upper resonator wall 284 of the second resonator assembly 281 and may be used to provide microwave energy to the second EM energy conditioning space 285. Alternatively, other coupling configurations may be used.

The side view includes a first set of first plasma regulators (270a, 270b, and 270c) that can extend into the process space 215 at a first yz plane position (z _2a-c ), and a second A first set of plasma adjustment rods () that may have a first set of EM energy adjustments (275 a, 275 b, and 275 _c ) that may extend into the second EM energy adjustment space 285 at a z _- plane position (z _1a-c ). (270a, 275a), (270b, 275b), and (270c, 275c)) are included in the yz plan view. The first set of isolated aggregates (264a, 264b, and 264c) is a first position defined using (z _2a-c ) in the process space 215, and the first set of plasma modulation distances (271a, 271b). , 271c) and the first set of plasma control units 270a, 270b, and 270c up to (plasma control distances 271a, 271b, and 271c). And 270c) may be extended). For example, the plasma conditioning distances (271a, 271b, and 271c) can vary from about 10 mm to about 400 mm and can be wavelength dependent and can vary from about (λ / 4) to about (10λ).

The first set of EM coupling regions (262a, 262b, and 262c) are set by the first set of EM coupling distances (276a, 276b, and 276c) from the lower resonator wall 283 in the second EM energy adjustment space 285. Good and the first set of EM adjustments (275a, 275b, and 275c) may extend to enter the first set of EM coupling regions (262a, 262b, and 262c). The first set of EM adjusters (275a, 275b, and 275c) may obtain adjustable microwave energy from the first set of EM coupling regions (262a, 262b, and 262c). Adjustable microwave energy is transferred to the process space 215 as plasma control energy that can be controlled at the first z-plane position (x _2a-c ) by using the first set of plasma control units (270a, 270b, and 270c). Can be transported. The first set of EM coupling regions (262a, 262b, and 262c) includes an adjustable electric field region, an adjustable magnetic field region, a maximum field region, a maximum voltage region, a maximum energy region, or a maximum current region, or a combination thereof. May be included. For example, the first set of EM coupling distances (276a, 276b, and 276c) may vary from about 0.01 mm to about 10 mm, and the first set of EM coupling distances (276a, 276b, and 276c) And can vary from about (λ / 4) to about (10λ).

  The first set of plasma conditioning slabs (261a, 261b, and 261c) are coupled to the first set of control assemblies (260a, 260b, and 260c) and the first set of control assemblies (260a, 260b, And 260c), the first set of plasma adjustment slabs (261a, 261b, and 261c) in the second EM energy adjustment space 285 is first set with respect to the first set of EM adjustment units (275a, 275b, and 275c). EM adjustment distances (277a, 277b, and 277c). The first set of control aggregates (260a, 260b, and 260c) and the first set of plasma conditioning slabs (261a, 261b, and 261c) are coupled to the first set of EM coupling regions (262a, 262b, and 262c). Microwave energy coupled to a first set of EM adjustments (275a, 275b, and 275c) of a set of plasma adjustment rods ((270a, 275a), (270b, 275b), and (270c, 275c)). Can be used to optimize. For example, the first set of EM adjustment distances (277a, 277b, and 277c) is equal to the first set of EM adjustment portions (275a, 275b, and 275c) in the second EM energy adjustment space 285 and the first set of plasma adjustment slabs. (261a, 261b, and 261c), and the first set of EM adjustment distances (277a, 277b, and 277c) may vary from about 0.01 mm to about 1 mm.

The first set of plasma conditioning rods ((270a, 275a), (270b, 275b), and (270c, 275c)) may include a dielectric material and may have a first diameter (d _1a ). . The first diameter (d _1a ) may vary from about 0.01 mm to about 1 mm. The first set of isolation assemblies (264a, 264b, and 264c) may have a first diameter (D _1a ). The first diameter (D _1a ) may vary from about 1 mm to about 10 mm.

A first set of EM adjusters (275a, 275b, and 275c), a first set of EM coupling regions (262a, 262b, and 262c), a first set of control aggregates (260a, 260b, and 260c), and The set of plasma conditioning slabs (261a, 261b, and 261c) may have a z-plane offset (z _1a-c ). For example, the z-plane offset (z _1a-c ) may be set for the lower resonator wall 183 and may vary from about (λ / 4) to about (10λ) depending on the wavelength. The first set of control aggregates (260a, 260b, and 260c) may include a dielectric material and have a cylindrical configuration and a diameter (d _2a-c ) that can vary from about 1 mm to about 5 mm. Good. The first set of plasma conditioning slabs (261a, 261b, and 261c) may include a dielectric material and may have a diameter (D _2a-c ). The diameter (D _2a-c ) may vary from about 1 mm to about 10 mm.

  As illustrated in FIG. 2C, the control aggregates (260a, 260b, and 260c) may be coupled to the controller 295 at 296. The controller 295 sets, controls, and optimizes the EM adjustment distances (277a, 277b, and 277c) so that the EM coupling regions (262a, 262b, and 262c) and the process space 215 within the EM energy adjustment space 285. The uniformity of the plasma inside may be controlled. Controller 295 may be coupled to microwave source 250, matching network 252, and coupling network 254 at 296. Controller 295 uses EM coupling regions (262a, 262b, and 262c) in EM energy conditioning space 285 by using a process recipe that sets, controls, and optimizes microwave source 250, matching network 252 and coupling network 254. ) And the uniformity of the plasma in the process space 215 may be controlled. For example, the microwave source 250 may operate at a frequency between about 500 MHz and about 5000 MHz. In addition, controller 295 may be coupled to resonator sensor 206 and process sensor 207 at 296, and controller 295 may set, control, and optimize data from resonator sensor 206 and process sensor 207. The process recipe may be used to control the EM coupling regions (262a, 262b, and 262c) in the EM energy conditioning space 285 and the plasma uniformity in the process space 215.

The sides of the second microwave resonator system 200 include a yz plan view of the cavity control assembly 255 and a yz plan view of the cavity tuning slab 256. The cavity control assembly 255 may have a first diameter (d _1aa ). The first diameter (d _1aa ) may vary from about 0.01 mm to about 1 mm. The cavity conditioning slab 256 may have a second diameter (D _1aa ). The second diameter (D _1aa ) may vary from about 1 mm to about 10 mm. Cavity control assembly 255 and cavity adjustment slab 256 may have a first xy plane offset (y _1aa ). The first xy plane offset (y _1aa ) may vary from about 1 mm to about 10 mm.

  Still referring to FIG. 2C, the yz plane of the substrate holder 220 and the lower electrode 221 is shown. If present, the lower electrode 221 may be used to couple radio frequency (RF) power to the plasma in the process space 215. For example, the lower electrode 221 may be electrically biased with an RF voltage by transmitting RF power from the RF generator 230 to the lower electrode 221 via the impedance matching network 231 and the RF sensor 235. The RF bias can function to heat the electrodes to generate and / or maintain the plasma. A typical frequency for the RF bias may range from 1 MHz to 100 MHz and is preferably 13.56 MHz. Alternatively, RF power may be applied to the lower electrode 221 at multiple frequencies. Furthermore, the impedance matching network 231 may function to maximize the transfer of RF power to the plasma within the process chamber 210 by suppressing reflected power. Various network structures and automatic control methods may be utilized. The RF sensor 235 may measure the power level and / or frequency associated with the fundamental signal, harmonic signal, and / or intermodulation signal. In addition, controller 295 is coupled to RF generator 230, impedance matching network 231 and RF sensor 235 at 296, and controller 295 includes RF generator 230, impedance matching network 231 and RF sensor 235. By using a process recipe that sets, controls, and optimizes the data exchanged between the EM coupled regions (262a, 262b, 262c) in the EM energy conditioning space 285 and the plasma in the process space 215 Uniformity may be controlled.

  A side of the second microwave resonator system 200 is coupled to the process chamber 210 and configured to evacuate the process chamber 210 as well as to control the pressure in the process chamber 210 and It may have a yz plane of the discharge port 291. Alternatively, pressure control system 290 and / or exhaust port 291 may not be required.

  As shown in FIG. 2C, the side surface may have a yz plane of the first gas supply system 240, the first supply element 241, the first flow element 242, and the process chamber 210. The first flow element 242 may be configured to introduce a first process gas into the process space 215 around the process space 215. In addition, the side surface may have a yz plane of the second gas supply system 245, the second supply element 246, and the second flow element 247. The second flow element 247 may be configured to introduce a second process gas into the process space 215 around the process space 215.

During dry plasma etching, the process gas may include an etchant, a passivant, or an inert gas, or a mixture thereof. For example, when plasma etching a dielectric film, such as silicon oxide (SiO _x ) or silicon nitride (Si _x N _y ), the plasma etching gas composition is typically a fluorocarbon-based chemical (C _x F _y ). - for example _{C 4 F 8, C 5 F} 8, C 3 F 6, C 4 F 6, CF 4 or the like - include, and / or a fluorohydrocarbon-based chemicals _{(C x H y F z)} - for example CHF ₃ , CH ₂ F _2, etc. and may contain at least one of an inert gas, oxygen, CO, or CO ₂ . In addition, for example, when etching polycrystalline silicon (polysilicon), the plasma etching gas composition typically contains a halogen-containing gas, such as HBr, Cl ₂ , NF ₃ , or SF ₆ , or mixtures thereof. And may contain a fluorohydrocarbon chemical (C _x H _y F _z ) —for example, CHF ₃ , CH ₂ F _2, etc.—and inert gas, oxygen, CO, or CO ₂ or these 2 It may have at least one of two or more mixtures. During plasma deposition, the process gas may include a film forming precursor, a reducing gas, or an inert gas, or a mixture of two or more thereof.

  FIG. 3A illustrates a third microwave resonator system 300 according to an embodiment of the present invention. The third microwave resonator system 300 may be used in a dry plasma etching system or a plasma deposition system. The third microwave resonator system 300 may include a third resonator subsystem 380 that can be coupled to the process chamber 310. Alternatively, the third microwave resonator system 300 may have a different configuration.

FIG. 3A shows a front view of the third microwave resonator system 300. The front view shows an xy plan view of a process chamber 310 that can be configured by using a first interface assembly 365a and a plurality of chamber walls 365a coupled to the first interface assembly 365a. Process space 315 may be configured within process chamber 310. For example, the chamber wall 312 may have a wall thickness (t), and the wall thickness (t) may vary between about 1 mm and about 5 mm. The first interface assembly 365a may have a first interface thickness (t _i1 ). The first interface thickness (t _i1 ) may vary from about 1 mm to about 10 mm.

  The front view of the second resonator subsystem 380 may include a third resonator assembly 381 having a plurality of resonator walls (382a, 382b, 383, and 284) defining a third EM energy conditioning space 385 therein. An xy plan view is shown. For example, the resonator walls (382a, 382b, 383, and 284) may include a dielectric material such as quartz. In addition, one or more resonator sensors 206 may be coupled to the third EM energy conditioning space 385 to obtain second resonator data.

The resonator wall 382a may have a wall thickness (t _a ). The wall thickness _{(t a)} may vary from about 1mm~ about 5 mm. The resonator wall 382b may have a wall thickness (t _b ). The wall thickness (t _b ) may vary from about 1 mm to about 5 mm. The resonator wall 383 may have a wall thickness (t). The wall thickness (t) may vary from about 1 mm to about 5 mm.

In some examples, the first interface assembly 365a may be used to removably couple the third resonator assembly 381 and the process chamber 310. The first interface assembly 365a may have a first interface thickness (t _i1 ). The wall thickness (t _i1 ) may vary from about 1 mm to about 10 mm. Alternatively, the first interface aggregate 365a may not be required or may have a different configuration. The first interface assembly 365a may include one or more isolation assemblies (364a, 364b, and 364c). Each of the isolation assemblies (364a, 364b, and 364c) may be removably coupled to the lower resonator wall 383 and removably coupled to one or more first interface assemblies 365a. You can do it. The first protection assembly 372a may be combined with the first isolation assembly 364a. The first protection aggregate 372a may be disposed at the first position (x _2a ) in the process space 315. The first protection assembly 372a may have a first isolation protection space 373a and a first insertion length 374a therein. The second protection assembly 372b may be combined with the second isolation assembly 364b. The second protection aggregate 372 _b may be disposed at the second position (x _2b ) in the process space 315. The second protection assembly 372b may have a second isolation protection space 373b and a second insertion length 374b therein. The third protection assembly 372c may be combined with the third isolation assembly 364c. The third protection aggregate 372 _c may be disposed at a third position (x _2c ) in the process space 315. The third protection assembly 372c may have a third isolation protection space 373c and a third insertion length 374c therein. For example, the insertion length (374a, 374b, and 374c) may vary from about 1 mm to about 10 mm in the xy plane, and the first set of protective assemblies (372a, 372b, and 372c) is one or more. The dielectric material may be used.

In addition, the second interface assembly 365b may be coupled to the third resonator assembly 381 by using the upper resonator wall 384. The second interface assembly 365b may have a second interface thickness (t _i2 ). The wall thickness (t _i2 ) may vary from about 1 mm to about 10 mm. Alternatively, the second interface aggregate 365b may not be required or may have a different configuration. The second interface aggregate 365b may include one or more control aggregates (360a, 360b, and 360c). Each of the control assemblies (360a, 360b, and 360c) may be removably coupled to the upper resonator wall 384 and removably coupled to the second interface assembly 365b. Alternatively, the control assemblies 360a, 360b, and 360c) may be coupled to the upper resonator wall 384, and the second interface assembly 365b may be omitted.

  The third microwave resonator system 300 may be configured to generate plasma in the process space 315 as the substrate holder 320 and the substrate move throughout the process space 315. The third microwave resonator system 300 may be configured to process 200 mm substrates, 300 mm substrates, or larger sized substrates. In addition, as will be appreciated by those skilled in the art, the third microwave resonator system 300 can be configured to process an annular, square, or rectangular substrate, wafer, or LCD, regardless of size. As such, cylindrical, square, and / or rectangular chambers may be configured. Thus, although aspects of the invention have been described in connection with processing a semiconductor substrate, the invention is not so limited.

  In other embodiments, the second resonator subsystem 380 may have a plurality of resonant cavities (not shown) therein. In other embodiments, the second resonator subsystem 380 may include a plurality of resonator subsystems having one or more resonant cavities therein. In various systems, the third resonator assembly 381 and the third EM energy adjustment space 385 may have a cylindrical shape, a rectangular shape, or a square shape.

  In some embodiments, the microwave source 350 may be coupled to the third resonator assembly 381. In addition, one or more RF sources (not shown) may be coupled to the second resonator subsystem 380. Microwave source 350 may be coupled to matching network 352. Matching network 352 may be coupled to coupling network 354. Alternatively, multiple matching networks (not shown) or multiple coupling networks (not shown) may be coupled to the second resonator subsystem 380. The coupling network 354 may be removably coupled to the upper resonator wall 384 of the third resonator assembly 381 and may be used to provide microwave energy to the third EM energy conditioning space 385. Alternatively, other coupling configurations may be used.

First plasma adjusting rod (370a, 375a) includes a first may extend so as to enter into the inside process space 315 of the first position _{(x 2a)} in the first isolation protection space 373a is set to the first protection assembly in 372a One plasma adjustment unit 370a and a first EM energy adjustment unit 375a that can extend to enter the third EM energy adjustment space 385 at the first position (x _1a ) may be included. The first isolation assembly 364b positions the first plasma adjustment unit 370a at the first plasma adjustment distance 371a in the first isolation protection space 373a set in the first protection assembly 372a (first plasma The first plasma adjustment unit 370a may be extended to the adjustment distance 371a). For example, the first plasma adjustment distance 371a may vary from about 10 mm to about 400 mm, and the first plasma adjustment distance 371a may be wavelength dependent and may vary from about (λ / 4) to about (10λ).

The first EM coupling region 362a may be set at a first EM coupling distance 376a from the lower resonator wall 383 that defines the third EM energy tuning space 385, and the first EM tuning unit 375a may enter the first EM coupling region 362a. Can extend. The first EM adjuster 375a may obtain first adjustable microwave energy from the first EM coupling region 362a. The first microwave energy may be transferred to the process space 315 as the first plasma adjustment energy at the first position (x _2a ) by using the first plasma adjustment unit 370a. The first EM coupling region 362a may include an adjustable electric field region, an adjustable magnetic field region, a maximum field region, a maximum voltage region, a maximum energy region, or a maximum current region, or a combination thereof. For example, the first EM coupling distance 376a may vary from about 0.01 mm to about 10 mm, and the first EM coupling distance 376a may be wavelength dependent and vary from about (λ / 4) to about (10λ).

  The first plasma conditioning slab 361a may be coupled to the first control assembly 360a, and the first control assembly 360a may be coupled to the first plasma regulation rod (370a, 375a) in the third EM energy regulation space 385. The first plasma adjustment slab 361a may be used to move the first EM adjustment distance 377a with respect to the 1EM adjustment unit 375a. The first control assembly 360a and the first plasma regulation slab 361a are used to optimize the microwave energy coupled from the first EM coupling region 362a to the first EM regulation part 375a of the first plasma regulation rod (370a, 375a). May be used. For example, the first EM adjustment distance 377a may be set between the first EM adjustment unit 375a and the first plasma adjustment slab 361a in the third EM energy adjustment space 385, and the first EM adjustment distance 377a may be about 0.01 mm to about 3-1 mm. It may vary between about 1 mm.

The first plasma control rod (370a, 375a) may have a first diameter (d _1a ). The first diameter (d _1a ) may vary from about 0.01 mm to about 1 mm. The first isolation assembly 364b may have a first diameter (D _1a ). The first diameter (D _1a ) may vary from about 1 mm to about 10 mm.

The first EM adjustment unit 375a, the first EM coupling region 362a, the first control assembly 360a, and the first plasma adjustment slab 361a may have a first xy plane offset (x _1a ). For example, the first xy plane offset (x _1a ) may be set with respect to the resonator wall 382b and may vary from about (λ / 4) to about (10λ) depending on the wavelength. The first control assembly 360a may have a cylindrical configuration and a diameter (d _2a ) that can vary from about 1 mm to about 5 mm. The first plasma conditioning slab 361a may have a diameter (D _2a ). The diameter (D _2a ) may vary from about 1 mm to about 10 mm.

The second plasma control rod (370b, 375b) may extend to enter a second isolation protection space 373b set in the second protection assembly 372b at a second position (x _2a ) in the process space 315. There may be provided a second plasma adjustment unit 370b and a second EM energy adjustment unit 375b that can extend to enter the third EM energy adjustment space 385 at the second position (x _1b ). The second isolation assembly 364b positions the second plasma adjustment unit 370b at the second plasma adjustment distance 371b in the third isolation protection space 373c set in the third protection assembly 372c (second plasma The second plasma adjustment unit 370b may be extended to the adjustment distance 371b). For example, the second plasma adjustment distance 371b may vary from about 10 mm to about 400 mm, and the second plasma adjustment distance 371b may be wavelength dependent and may vary from about (λ / 4) to about (10λ).

The second EM coupling region 362b may be set at a second EM coupling distance 376b from the lower resonator wall 383 in the third EM energy regulation space 385, and the second EM tuning unit 375b extends to enter the second EM coupling region 362b. obtain. The second EM adjuster 375b may obtain second adjustable microwave energy from the second EM coupling region 362b. The second microwave energy may be transferred to the process space 315 as the second plasma adjustment energy at the second position (x _2b ) by using the second plasma adjustment unit 370b. The second EM coupling region 362b may include an adjustable electric field region, an adjustable magnetic field region, a maximum field region, a maximum voltage region, a maximum energy region, or a maximum current region, or a combination thereof. For example, the second EM coupling distance 376b may vary from about 0.01 mm to about 10 mm, and the second EM coupling distance 376b may be wavelength dependent and vary from about (λ / 4) to about (10λ).

  The second plasma conditioning slab 361b may be coupled to the second control assembly 360b, and the second control assembly 360b is within the third EM energy conditioning space 385 relative to the second plasma conditioning rod (370b, 375b). Then, the second plasma adjustment slab 361b may be used to move with 263b by the second EM adjustment distance 377b. The second control assembly 360b and the second plasma conditioning slab 361b are used to optimize the microwave energy coupled from the second EM coupling region 362b to the second EM tuning unit 375b of the second plasma tuning rod (370b, 375b). May be used. For example, the second EM adjustment distance 377b may be set between the second EM adjustment unit 375b and the second plasma adjustment slab 361b in the third EM energy adjustment space 385, and the second EM adjustment distance 377b is about 0.01 mm to It may vary between about 1 mm.

The second plasma control rod (370b, 375b) may have a second diameter (d _1b ). The second diameter (d _1b ) may vary from about 0.01 mm to about 1 mm. The second isolation assembly 364b may have a second diameter (D _1b ). The second diameter (D _1b ) may vary from about 1 mm to about 10 mm.

The second EM adjustment unit 375b, the second EM coupling region 362b, the second control assembly 360b, and the second plasma adjustment slab 361b may have a second x plane offset (x _1b ). For example, the first x-plane offset (x _1b ) may be set with respect to the resonator wall 382b and may vary from about (λ / 4) to about (10λ) depending on the wavelength. The second control assembly 360b may have a cylindrical configuration and a diameter (d _2b ) that can vary from about 1 mm to about 5 mm. The second plasma conditioning slab 361b may have a diameter (D _2b ). The diameter (D _2b ) may vary from about 1 mm to about 10 mm.

The third plasma adjusting rod (370c, 375c) is first may extend so as to enter into the third isolation protection space 373c of the third position in the process space 315 _{(x 2c)} is set to the third protection assembly within 372c 3 plasma adjusting unit 370c, and may have a first 3EM energy adjusting unit 375c that may extend as in the third position _{(x 1c)} entering the first 3EM energy control space 385. The third isolation assembly 364c positions the third plasma adjustment unit 370c at the third plasma adjustment distance 371c in the third isolation protection space 373c set in the third protection assembly 372c (third plasma The third plasma adjustment unit 370c may be extended to the adjustment distance 371c). For example, the third plasma adjustment distance 371c may vary from about 10 mm to about 400 mm, and the third plasma adjustment distance 371c may be wavelength dependent and may vary from about (λ / 4) to about (10λ).

The third EM coupling region 362c may be set at a third EM coupling distance 376c from the lower resonator wall 383 defining the third EM energy tuning space 385, and the third EM tuning unit 375c may enter the third EM coupling region 362c. Can extend. The third EM adjuster 375c may obtain third adjustable microwave energy from the third EM coupling region 362c. The third microwave energy may be transferred to the process space 315 as the third plasma adjustment energy at the third position (x _2c ) by using the third plasma adjustment unit 370c. The third EM coupling region 362c may include an adjustable electric field region, an adjustable magnetic field region, a maximum field region, a maximum voltage region, a maximum energy region, or a maximum current region, or a combination thereof. For example, the third EM coupling distance 376c may vary from about 0.01 mm to about 10 mm, and the third EM coupling distance 376c may be wavelength dependent and vary from about (λ / 4) to about (10λ).

  The third plasma conditioning slab 361c may be coupled to the third control assembly 360c, and the third control assembly 360c is within the third EM energy conditioning space 385 relative to the third plasma conditioning rod (370c, 375c). The third plasma adjustment slab 361c may be used to move the third EM adjustment distance 377c. The third control assembly 360c and the third plasma regulation slab 361c are used to optimize the microwave energy coupled from the third EM coupling region 362a to the third EM tuning unit 375c of the third plasma regulation rod (370c, 375c). May be used. For example, the third EM adjustment distance 377c may be set between the third EM adjustment unit 375c and the third plasma adjustment slab 361c in the third EM energy adjustment space 385, and the third EM adjustment distance 377c may be about 0.01 mm to about 3,000 mm. It may vary between about 1 mm.

The third plasma conditioning rod (370c, 375c) may have a third diameter (d _1c ). The third diameter (d _1c ) may vary from about 0.01 mm to about 1 mm. The third isolation assembly 364c may have a first diameter (D _1c ). The third diameter (D _1c ) may vary from about 1 mm to about 10 mm.

The third EM adjustment unit 375c, the second EM coupling region 362c, the third control assembly 360c, and the third plasma adjustment slab 361c may have a third xy plane offset (x _1c ). For example, the third xy plane offset (x _1c ) may be set for the resonator wall 382b and may vary from about (λ / 4) to about (10λ) depending on the wavelength. The third control assembly 360c may have a cylindrical configuration and a diameter (d _2c ) that can vary from about 1 mm to about 5 mm. The third plasma regulation slab 361c may have a diameter (D _2c ). The diameter (D _2c ) may vary from about 1 mm to about 10 mm.

  The control aggregates (360a, 360b, and 360c) may be coupled 396 to the controller 395. The controller 395 sets, controls, and optimizes the EM adjustment distances (377a, 377b, and 377c) so that the EM coupling regions (362a, 362b, and 362c) and the process space within the EM energy adjustment space 385. The uniformity of the plasma within 315 may be controlled. Controller 395 may be coupled to microwave source 350, matching network 352, and coupling network 354. Controller 395 uses EM coupling regions (362a, 362b, and 362c) in EM energy conditioning space 385 by using a process recipe that sets, controls, and optimizes microwave source 350, matching network 352, and coupling network 354. ) And the uniformity of the plasma in the process space 315 may be controlled. For example, the microwave source 350 may operate at a frequency between about 500 MHz and about 5000 MHz. In addition, the controller 395 may be coupled to the resonator sensor 306 and the process sensor 307, and the controller 395 is a process for setting, controlling, and optimizing data from the resonator sensor 306 and the process sensor 307. Using the recipe, the uniformity of the plasma in the EM coupling regions (362a, 362b, and 362c) in the EM energy conditioning space 385 and in the process space may be controlled.

The front surface of the third microwave resonator system 300 includes an xy plan view of the cavity control assembly 355 shown coupled to the front surface of the cavity tuning slab 356. The cavity control assembly 355 may have a first diameter (d _1aa ). The first diameter (d _1aa ) may vary from about 0.01 mm to about 1 mm. The cavity conditioning slab 356 may have a second diameter (D _1aa ). The second diameter (D _1aa ) may vary from about 1 mm to about 10 mm. Cavity control assembly 355 and cavity adjustment slab 356 may have a y-plane offset (y _1aa ). The first xy plane offset (y _1aa ) may vary from about 1 mm to about 10 mm.

  The cavity control assembly 355 may be used to move the cavity adjustment slab 356 by a cavity adjustment distance 358 within the third EM energy adjustment space 385. Controller 395 may be coupled to cavity control assembly 355 at 396. The controller 395 may control and maintain plasma uniformity in the process space 315 in real time by using a process recipe that sets, controls, and optimizes the cavity adjustment distance 358. For example, the second cavity adjustment distance 358 may vary from about 0.01 mm to about 10 mm, and the second cavity adjustment distance 358 may be wavelength dependent and vary from about (λ / 16) to about (10λ). good.

  Still referring to FIG. 3A, a substrate holder 320 and a lower electrode 321 are shown. If present, the lower electrode 321 may be used to couple radio frequency (RF) power to the plasma in the process space 315. For example, the lower electrode 321 may be electrically biased with an RF voltage by transmitting RF power from the RF generator 330 to the lower electrode 321 via the impedance matching network 331 and the RF sensor 335. The RF bias can function to heat the electrodes to generate and / or maintain the plasma. A typical frequency for the RF bias may range from 1 MHz to 100 MHz and is preferably 13.56 MHz. Alternatively, RF power may be applied to the lower electrode 321 at multiple frequencies. Furthermore, the impedance matching network 331 may function to maximize the transfer of RF power to the plasma within the process chamber 310 by suppressing reflected power. Various network structures and automatic control methods may be utilized. The RF sensor 335 may measure the power level and / or frequency associated with the fundamental signal, harmonic signal, and / or intermodulation signal. In addition, controller 395 is coupled 396 to RF generator 330, impedance matching network 331, and RF sensor 335, and controller 395 includes RF generator 330, impedance matching network 331, and RF sensor 335. By using a process recipe that sets, controls, and optimizes the data exchanged between them, the EM coupling regions (362a, 362b, 362c) in the EM energy conditioning space 385 and the uniformity of the plasma in the process space You can control sex.

  Within the third microwave resonator system 300 is a pressure control system 390 that is coupled to the process chamber 310 and configured to exhaust the process chamber 310 as well as control the pressure within the process chamber 310. And an exhaust port 391. Alternatively, pressure control system 390 and / or exhaust port 391 may not be required.

  As shown in FIG. 3A, the third microwave resonator system 300 may include a first gas supply system 340 coupled to the first supply element 341, and the first supply element 341 It may be coupled to one or more flow elements 342 that may be coupled to chamber 310. The flow element 342 is configured to introduce the first process gas into the process space 315 and may include a flow control and / or flow measurement device. In addition, the third microwave resonator system 300 may have a second gas supply system 345 coupled to the second supply element 346 and the second supply element 346 can be coupled to the process chamber 310. One or more second flow elements 347 may be coupled. The second flow element 347 is configured to introduce a second process gas into the process space 315 and may include a flow control and / or flow measurement device. Alternatively, the second gas supply system 345, the second gas supply element 346, and / or the second flow element 347 may not be required.

During dry plasma etching, the process gas may include an etchant, a passivant, or an inert gas, or a mixture thereof. For example, when plasma etching a dielectric film, such as silicon oxide (SiO _x ) or silicon nitride (Si _x N _y ), the plasma etching gas composition is typically a fluorocarbon-based chemical (C _x F _y ). - for example _{C 4 F 8, C 5 F} 8, C 3 F 6, C 4 F 6, CF 4 or the like - include, and / or a fluorohydrocarbon-based chemicals _{(C x H y F z)} - for example CHF ₃ , CH ₂ F _2, etc. and may contain at least one of an inert gas, oxygen, CO, or CO ₂ . In addition, for example, when etching polycrystalline silicon (polysilicon), the plasma etching gas composition typically contains a halogen-containing gas, such as HBr, Cl ₂ , NF ₃ , or SF ₆ , or mixtures thereof. And may contain a fluorohydrocarbon chemical (C _x H _y F _z ) —for example, CHF ₃ , CH ₂ F _2, etc.—and inert gas, oxygen, CO, or CO ₂ or these 2 It may have at least one of two or more mixtures. During plasma deposition, the process gas may include a film forming precursor, a reducing gas, or an inert gas, or a mixture of two or more thereof.

FIG. 3B shows the top surface of the third resonator assembly according to an embodiment of the present invention. The third resonator assembly 381 may have a total length (x _T1 ) and a total height (z _T1 ) in the xz plane. For example, the total length (x _T1 ) can vary from about 10 mm to about 500 mm, and the total height (z _T1 ) can vary from about 10 mm to about 1000 mm.

The top surface of the third resonator subsystem 380 includes the xz plane of the first control assembly 360a, shown surrounded by the top surface (dashed line) of the first plasma conditioning slab 361a. The first control aggregate 360a may have a first diameter (d _2a ). The first diameter (d _2a ) may vary from about 0.01 mm to about 1 mm. The first plasma conditioning slab 361a may have a second diameter (D _2a ). The second diameter (D _2a ) may vary from about 1 mm to about 10 mm. The first control assembly 360a and the first plasma conditioning slab 361a may have a first x plane offset (x _1a ). The first x plane offset (x _1a ) may vary from about 1 mm to about 10 mm. Alternatively, the first control assembly 360a and the first plasma conditioning slab 361a may have different first xz plane offsets (x _1a ). The first control assembly 360a and the first plasma conditioning slab 361a may have a first xz plane offset (z _1a ). The first z-plane offset (z _1a ) may vary from about 1 mm to about 10 mm. Alternatively, the first control assembly 360a and the first plasma conditioning slab 361a may have different first xz plane offsets (z _1a ).

In addition, the top surface of the third resonator subsystem 380 includes the xz plane of the second control assembly 360b shown shown surrounded by the top surface (dashed line) of the second plasma conditioning slab 361b. The second control aggregate 360b may have a first diameter (d _2b ). The first diameter (d _2b ) may vary from about 0.01 mm to about 1 mm. The second plasma conditioning slab 361b may have a second diameter (D _2b ). The second diameter (D _2b ) may vary from about 1 mm to about 10 mm. The second control aggregate 360b and the second plasma conditioning slab 361b may have a second xz plane offset (x _1b ). The second xz plane offset (x _1b ) may vary from about 1 mm to about 10 mm. Alternatively, the second control assembly 360b and the second plasma conditioning slab 361b may have different second xz plane offsets (x _1b ). The second control aggregate 360b and the second plasma conditioning slab 361b may have a second xz plane offset (z _1b ). The second xz plane offset (z _1b ) may vary from about 1 mm to about 10 mm. Alternatively, the second control assembly 360b and the first plasma conditioning slab 361b may have different second xz plane offsets (z _1a ).

Further, the top surface of the third resonator subsystem 380 includes the xz plane of the third control assembly 360c shown as surrounded by the top surface (dashed line) of the third plasma conditioning slab 361c. The third control aggregate 360c may have a first diameter (d _2c ). The first diameter (d _2c ) may vary from about 0.01 mm to about 1 mm. The third plasma conditioning slab 361c may have a second diameter (D _2c ). The second diameter (D _2a ) may vary from about 1 mm to about 10 mm. The third control assembly 360c and the third plasma conditioning slab 361c may have a third x plane offset (x _1c ). The third x plane offset (x _1c ) may vary from about 1 mm to about 10 mm. Alternatively, the third control assembly 360c and the third plasma conditioning slab 361c may have different third x plane offsets (x _1c ). The third control assembly 360c and the third plasma conditioning slab 361c may have a third z-plane offset (z _1c ). The third z-plane offset (z _1c ) may vary from about 1 mm to about 10 mm. Alternatively, the third control assembly 360c and the third plasma conditioning slab 361c may have different third z-plane offsets (z _1c ).

FIG. 3B shows the top surface of the resonator walls (382a, 382b, 383, and 384). The resonator wall 382a may have a wall thickness (t _a ). The wall thickness _{(t a)} may vary from about 1mm~ about 5 mm. The resonator wall 382b may have a wall thickness (t _b ). The wall thickness (t _b ) may vary from about 1 mm to about 5 mm. The resonator walls (382a, 382b) may have a wall thickness (t). The wall thickness (t) may vary from about 1 mm to about 5 mm.

The top surface of the third microwave resonator system 300 includes an xz plan view of the cavity control assembly 355 shown coupled to the top surface of the cavity tuning slab 356. The cavity control assembly 355 may have a first diameter (d _1aa ). The first diameter (d _1aa ) may vary from about 0.01 mm to about 1 mm. The cavity conditioning slab 356 may have a second diameter (D _1aa ). The second diameter (D _1aa ) may vary from about 1 mm to about 10 mm. Cavity control assembly 355 and cavity adjustment slab 356 may have a first xz plane offset (z _1aa ). The first xz plane offset (z _1aa ) may vary from about 1 mm to about 10 mm.

FIG. 3C shows a side view of the third microwave resonator system 300. The side view shows a yz plan view of a process chamber 310 that can be configured by using a first interface assembly 365a and a plurality of chamber walls 312 coupled to the first interface assembly 365a. Process space 315 may be configured within process chamber 310. For example, the chamber wall 312 may have a wall thickness (t), and the wall thickness (t) may vary between about 1 mm and about 5 mm. The first interface assembly 365a may have a first interface thickness (t _i1 ). The first interface thickness (t _i1 ) may vary from about 1 mm to about 10 mm.

  The side view shows a yz plan view of a third resonator subsystem 380 that may include a third resonator assembly 381 that may be configured with a plurality of resonator walls (382a, 382b, 383, and 384). . For example, the resonator walls (382a, 382b, 383, and 384) may include a dielectric material, such as quartz, and may define a third EM energy conditioning space 385 therein. In addition, one or more resonator sensors 306 may be coupled to the third EM energy conditioning space 385 to obtain first resonator data.

The resonator wall 382a may have a wall thickness (t _a ). The wall thickness _{(t a)} may vary from about 1mm~ about 5 mm. The resonator wall 382b may have a wall thickness (t _b ). The wall thickness (t _b ) may vary from about 1 mm to about 5 mm. The resonator wall 382 may have a wall thickness (t). The wall thickness (t) may vary from about 1 mm to about 5 mm.

In some examples, the first interface assembly 365a may be used to removably couple the third resonator assembly 381 and the process chamber 310. The first interface assembly 365a may have a first interface thickness (t _i1 ). The wall thickness (t _i1 ) may vary from about 1 mm to about 10 mm. Alternatively, the first interface aggregate 365a may not be required or may have a different configuration. The first interface assembly 365a may include one or more isolation assemblies (364b, 364b, and 364c). Each of the isolation assemblies (364b, 364b, and 364c) may be removably coupled to the lower resonator wall 383 and removably coupled to one or more first interface assemblies. Good.

In addition, the second interface assembly 365b may be coupled to the third resonator assembly 381 by using the upper resonator wall 384. The second interface assembly 365b may have a second interface thickness (t _i2 ). The wall thickness (t _i2 ) may vary from about 1 mm to about 10 mm. Alternatively, the second interface aggregate 365b may not be required or may have a different configuration. The second interface aggregate 365b may include one or more control aggregates (360a, 360b, and 360c). Each of the control assemblies (360a, 360b, and 360c) may be removably coupled to the upper resonator wall 384 and removably coupled to the second interface assembly 365b. Alternatively, the control aggregates (360a, 360b, and 360c) may be coupled to the upper resonator wall 384 and the second interface aggregate may be omitted.

  The third microwave resonator system 300 may be configured to generate plasma in the process space 315 as the substrate holder 320 and the substrate move throughout the process space 315. The third microwave resonator system 300 may be configured to process 200 mm substrates, 300 mm substrates, or larger sized substrates. In addition, as will be appreciated by those skilled in the art, the third microwave resonator system 300 can be configured to process an annular, square, or rectangular substrate, wafer, or LCD, regardless of size. As such, cylindrical, square, and / or rectangular chambers may be configured. Thus, although aspects of the invention have been described in connection with processing a semiconductor substrate, the invention is not so limited.

  In other embodiments, the third resonator subsystem 380 may have a plurality of resonant cavities (not shown) therein. In other embodiments, the third resonator subsystem 380 may include a plurality of resonator subsystems having one or more resonant cavities therein. In various systems, the third resonator assembly 381 and the third EM energy adjustment space 385 may have a cylindrical shape, a rectangular shape, or a square shape.

  In FIG. 3C, a side view of the microwave resonator system 300 is illustrated. Microwave source 350 may be coupled to matching network 352. Matching network 352 may be coupled to coupling network 354. Alternatively, multiple matching networks (not shown) or multiple coupling networks (not shown) may be coupled to the third resonator subsystem 380. The coupling network 354 may be removably coupled to the upper resonator wall 384 of the third resonator assembly 381 and may be used to provide microwave energy to the third EM energy conditioning space 385. Alternatively, other coupling configurations may be used.

The side view shows a first set of isolated protected spaces (373a, 373a, 372c, 372c) set in a first set of protected assemblies (372a, 372b, and 372c) at a first yz plane position (z _2a-c ) in the process space 315. 373b and 373c) a first set of first plasma conditioning portions (370a, 370b, and 370c) that can extend into the third EM energy conditioning space at a second yz plane position (z1a _-c ). A first set of plasma conditioning rods ((370a, 375a), (370b, 375b), and (370c) that may have a first set of EM energy adjustments (375a, 375b, and 375c) that may extend into 385. 375c)). The first set of isolated aggregates (364b, 364b, and 364c) is a first position defined using (z _2a-c ) in the process space 315, and the first set of plasma modulation distances (371a, 371b). , 371c) and the first set of plasma control units (370a, 370b, and 370c) are positioned (plasma control distances (371a, 371b, and 371c)). And 370c) may be extended). For example, the plasma conditioning distances (371a, 371b, and 371c) may vary from about 10 mm to about 400 mm, and may be wavelength dependent and vary from about (λ / 4) to about (10λ).

The first set of EM coupling regions (362a, 362b, and 362c) may be set at an EM coupling distance (376a, 376b, and 376c) from the lower resonator wall 383 in the third EM energy conditioning space 385, and The first set of EM adjustments (375a, 375b, and 375c) may extend to enter the first set of EM coupling regions (362a, 362b, and 362c). The first set of EM adjusters (375a, 375b, and 375c) may obtain adjustable microwave energy from the first set of EM coupling regions (362a, 362b, and 362c). Adjustable microwave energy is transferred to the process space 315 as plasma control energy controllable at the first z plane position (x _2a-c ) by using the first set of plasma control units (370a, 370b, and 370c). Can be transported. The first set of EM coupling regions (362a, 362b, and 362c) includes an adjustable electric field region, an adjustable magnetic field region, a maximum field region, a maximum voltage region, a maximum energy region, or a maximum current region, or a combination thereof. May be included. For example, the first set of EM coupling distances (376a, 376b, and 376c) may vary from about 0.01 mm to about 10 mm, and the first set of EM coupling distances (376a, 376b, and 376c) are wavelengths. And can vary from about (λ / 4) to about (10λ).

  The first set of plasma conditioning slabs (361a, 361b, and 361c) are coupled to the first set of control assemblies (360a, 360b, and 360c) and the first set of control assemblies (360a, 360b, And 360c) a first set of plasma adjustment slabs (361a, 361b, and 361c) in a third EM energy adjustment space 385 with respect to the first set of EM adjustment units (375a, 375b, and 375c). EM adjustment distances (377a, 377b, and 377c). The first set of control aggregates (360a, 360b, and 360c) and the first set of plasma conditioning slabs (361a, 361b, and 361c) are arranged from the first set of EM coupling regions (362a, 362b, and 362c). Microwave energy coupled to a first set of EM adjustments (375a, 375b, and 375c) of a set of plasma adjustment rods ((370a, 375a), (370b, 375b), and (370c, 375c)). Can be used to optimize. For example, the first set of EM adjustment distances (377a, 377b, and 377c) is equal to the first set of EM adjustment portions (375a, 375b, and 375c) in the third EM energy adjustment space 385 and the first set of plasma adjustment slabs. (361a, 361b, and 361c) and the first set of EM adjustment distances (377a, 377b, and 377c) may vary from about 0.01 mm to about 1 mm.

A first set of protection assemblies (372a, 372b, and 372c) may be coupled to the first set of isolation assemblies (364a, 364b, and 364c). The first set of protection aggregates (372a, 372b, and 372c) may be disposed at a first position (z _2a-c ) in the process space 315. The set of protection assemblies (372a, 372b, and 372c) has a first set of isolated protection spaces (373a, 373b, and 373c) inside, and has insertion lengths (374a, 374b, and 374c). May have. For example, the insertion length (374a, 374b, and 374c) may vary from about 1 mm to about 10 mm in the yz plane, and the protective assembly (372a, 372b, and 372c) includes one or more dielectric materials. It may be configured using.

The first set of plasma conditioning rods ((370a, 375a), (370b, 375b), and (370c, 375c)) may include a dielectric material and may have a first diameter (d _1a ). . The first diameter (d _1a ) may vary from about 0.01 mm to about 1 mm. The first set of isolation assemblies (364b, 364b, and 364c) and the first set of protection assemblies (372a, 372b, and 372c) may have a first diameter (D _1a ). The first diameter (D _1a ) may vary from about 1 mm to about 10 mm. Alternatively, the isolation assemblies (364a, 364b, and 364c) and the first set of protection assemblies (372a, 372b, and 372c) may have different diameters.

A first set of EM adjusters (375a, 375b, and 375c), a first set of EM coupling regions (362a, 362b, and 362c), a first set of control aggregates (360a, 360b, and 360c), and a first The set of plasma conditioning slabs (361a, 361b, and 361c) may have a z-plane offset (z _1a-c ). For example, the yz plane offset (z _1a-c ) may be set for the lower resonator wall 183 and may vary from about (λ / 4) to about (10λ) depending on the wavelength. The first set of control aggregates (360a, 360b, and 360c) may include a dielectric material and have a cylindrical configuration and a diameter (d _2a-c ) that can vary from about 1 mm to about 5 mm. Good. The first set of plasma conditioning slabs (361a, 361b, and 361c) may include a dielectric material and may have a diameter (D _2a-c ). The diameter (D _2a-c ) may vary from about 1 mm to about 10 mm.

  As illustrated in FIG. 3C, the control aggregates (360a, 360b, and 360c) may be coupled to the controller 395 at 396. The controller 395 may control the uniformity of the plasma within the process space 315 by setting, controlling, and optimizing the EM adjustment distances (377a, 377b, and 377c). Controller 395 may be coupled 396 to microwave source 350, matching network 352, and coupling network 354. Controller 395 uses EM coupling regions (362a, 362b, and 362c) in EM energy conditioning space 285 by using a process recipe that sets, controls, and optimizes microwave source 350, matching network 352, and coupling network 354. ) And the uniformity of the plasma in the process space 315 may be controlled. For example, the microwave source 350 may operate at a frequency between about 500 MHz and about 5000 MHz. In addition, controller 395 may be coupled to resonator sensor 306 and process sensor 307 at 396, and controller 395 may set, control, and optimize data from resonator sensor 306 and process sensor 307. The process recipe may be used to control the uniformity of the plasma in the EM coupling regions (362a, 362b, and 362c) in the EM energy conditioning space 385 and the process space 315.

Sides of the third microwave resonator system 300 include a yz plan view of the cavity control assembly 355 and a yz plan view of the cavity tuning slab 356. The cavity control assembly 355 may have a first diameter (d _1aa ). The first diameter (d _1aa ) may vary from about 0.01 mm to about 1 mm. The cavity conditioning slab 356 may have a second diameter (D _1aa ). The second diameter (D _1aa ) may vary from about 1 mm to about 10 mm. The cavity control aggregate 355 and cavity adjustment slab 356 may have a first yz plane offset (y _1aa ). The first yz plane offset (y _1aa ) may vary from about 1 mm to about 10 mm.

  Still referring to FIG. 3C, the yz plane of substrate holder 320 and lower electrode 321 is shown. If present, the lower electrode 321 may be used to couple radio frequency (RF) power to the plasma in the process space 315. For example, the lower electrode 321 may be electrically biased with an RF voltage by transmitting RF power from the RF generator 330 to the lower electrode 321 via the impedance matching network 331 and the RF sensor 335. The RF bias can function to heat the electrodes to generate and / or maintain the plasma. A typical frequency for the RF bias may range from 1 MHz to 100 MHz and is preferably 13.56 MHz. Alternatively, RF power may be applied to the lower electrode 321 at multiple frequencies. Furthermore, the impedance matching network 331 may function to maximize the transfer of RF power to the plasma within the process chamber 310 by suppressing reflected power. Various network structures and automatic control methods may be utilized. The RF sensor 335 may measure the power level and / or frequency associated with the fundamental signal, harmonic signal, and / or intermodulation signal. In addition, controller 395 is coupled 396 to RF generator 330, impedance matching network 331, and RF sensor 335, and controller 395 includes RF generator 330, impedance matching network 331, and RF sensor 335. By using process recipes to set, control and optimize data exchanged between the EM coupling regions (362a, 362b, 362c) in the EM energy conditioning space 385 and the plasma in the process space 315 Uniformity may be controlled.

  A side of the third microwave resonator system 300 is coupled to the process chamber 310 and is configured to evacuate the process chamber 310 as well as control the pressure in the process chamber 310 and It may have a yz plane of the discharge port 391. Alternatively, pressure control system 390 and / or exhaust port 391 may not be required.

  As illustrated in FIG. 3C, the side surface may have a yz plane of the first gas supply system 340, the first supply element 341, the first flow element 342, and the process chamber 310. The first flow element 342 may be configured to introduce a first process gas into the process space 315 around the process space 315. In addition, the side surface may include the yz plane of the second gas supply system 345, the second supply element 346, and the second flow element 347. The second flow element 347 may be configured to introduce a second process gas into the process space 315 around the process space 315.

During dry plasma etching, the process gas may include an etchant, a passivant, or an inert gas, or a mixture thereof. For example, when plasma etching a dielectric film, such as silicon oxide (SiO _x ) or silicon nitride (Si _x N _y ), the plasma etching gas composition is typically a fluorocarbon-based chemical (C _x F _y ). - for example _{C 4 F 8, C 5 F} 8, C 3 F 6, C 4 F 6, CF 4 or the like - include, and / or a fluorohydrocarbon-based chemicals _{(C x H y F z)} - for example CHF ₃ , CH ₂ F _2, etc. and may contain at least one of an inert gas, oxygen, CO, or CO ₂ . In addition, for example, when etching polycrystalline silicon (polysilicon), the plasma etching gas composition typically contains a halogen-containing gas, such as HBr, Cl ₂ , NF ₃ , or SF ₆ , or mixtures thereof. And may contain a fluorohydrocarbon chemical (C _x H _y F _z ) —for example, CHF ₃ , CH ₂ F _2, etc.—and inert gas, oxygen, CO, or CO ₂ or these 2 It may have at least one of two or more mixtures. During plasma deposition, the process gas may include a film forming precursor, a reducing gas, or an inert gas, or a mixture of two or more thereof.

FIG. 4A represents a fourth microwave resonator system 400. The front view shows an xy plan view of a process chamber 410 that can be configured by using a first interface assembly 465a and a plurality of chamber walls 465a coupled to the first interface assembly 465a. Process space 415 may be configured within process chamber 410. For example, the chamber wall 312 may have a wall thickness (t), and the wall thickness (t) may vary between about 1 mm and about 5 mm. The first interface assembly 465a may have a first interface thickness (t _i1 ). The first interface thickness (t _i1 ) may vary from about 1 mm to about 10 mm.

  The front view of the second resonator subsystem 380 may include a third resonator assembly 381 having a plurality of resonator walls (482a, 482b, 483, and 484) defining a fourth EM energy conditioning space 485 therein. An xy plan view is shown. For example, the resonator walls (482a, 482b, 483, and 484) may include a dielectric material such as quartz. In addition, one or more resonator sensors 406 may be coupled to the fourth EM energy conditioning space 485 to obtain second resonator data.

The resonator wall 482a may have a wall thickness (t _a ). The wall thickness _{(t a)} may vary from about 1mm~ about 5 mm. The resonator wall 482b may have a wall thickness (t _b ). The wall thickness (t _b ) may vary from about 1 mm to about 5 mm. The resonator wall 482 may have a wall thickness (t). The wall thickness (t) may vary from about 1 mm to about 5 mm.

In some examples, the first interface assembly 465a may be used to removably couple the fourth resonator assembly 481 and the process chamber 410. The second interface assembly 465a may have a first interface thickness (t _i1 ). The wall thickness (t _i1 ) may vary from about 1 mm to about 10 mm. Alternatively, the second interface aggregate 465a may not be required or may have a different configuration.

The first interface assembly 465a may include one or more isolation assemblies (464b, 464b, and 464c). Each of the isolation assemblies (464b, 464b, and 464c) may be removably coupled to the lower resonator wall 483 and may be removably coupled to the first interface assembly 465a. The first protection assembly 472a may be combined with the first isolation assembly 464a. The first protection aggregate 472a may be disposed at the first position (x _2a ) in the process space 415. The first protection assembly 472a may have a first isolation protection space 473a and a first insertion length 474a therein. The second protection assembly 472b may be combined with the second isolation assembly 464b. The second protection aggregate 472b may be disposed at the second position (x _2b ) in the process space 415. The second protection assembly 472b may have a second isolation protection space 473b and a second insertion length 474b therein. For example, the insertion length (474a, 474b, and 474c) may vary from about 1 mm to about 10 mm in the xy plane, and the first set of protective assemblies (472a, 472b, and 472c) is one or more. The dielectric material may be used.

The third protection assembly 472c may be coupled to the third isolation assembly 464c. The third protection assembly 472c may be disposed at the third position (y _2c ) in the process space 415. The third protection assembly 472c may have a third isolation protection space 473c inside and may have a third insertion length 474c. The fourth protection assembly 472d may be coupled to the fourth isolation assembly 464d. The fourth protection aggregate 472d may be disposed at the fourth position (y _2d ) in the process space 415. The fourth protection assembly 472d may have a fourth isolation protection space 473d inside, and may have a fourth insertion length 474d. For example, the insertion length (474c and 474d) may vary from about 1 mm to about 10 mm in the xy plane and the second set of protective assemblies (472c and 472d) uses one or more dielectric materials. May be configured.

In addition, the second interface assembly 465b may be coupled to the fourth resonator assembly 481 by using the upper resonator wall 484. The second interface assembly 465b may have a second interface thickness (t _i2 ). The wall thickness (t _i2 ) may vary from about 1 mm to about 10 mm. Alternatively, the second interface aggregate 465b may not be required or may have a different configuration. The second interface aggregate 465b may include one or more control aggregates (460a, 460b, and 460c). Each of the control assemblies (460a, 460b, and 460c) may be removably coupled to the top resonator wall 484 and removably coupled to the second interface assembly 465b. Alternatively, control assemblies 460a, 460b, and 460c) may be coupled to the upper resonator wall 484, and the second interface assembly 465b may be omitted.

  The fourth microwave resonator system 400 may be configured to generate plasma in the process space 415 as the substrate holder 420 and the substrate move throughout the process space 415. The fourth microwave resonator system 400 may be configured to process 200 mm substrates, 300 mm substrates, or larger sized substrates. In addition, as will be appreciated by those skilled in the art, the fourth microwave resonator system 400 can be configured to process an annular, square, or rectangular substrate, wafer, or LCD, regardless of size. As such, cylindrical, square, and / or rectangular chambers may be configured. Thus, although aspects of the invention have been described in connection with processing a semiconductor substrate, the invention is not so limited.

  In other embodiments, the fourth resonator subsystem 480 may have a plurality of resonant cavities (not shown) therein. In other embodiments, the fourth microwave resonator system 400 may include a plurality of resonator subsystems having one or more resonant cavities therein. In various systems, the fourth resonator assembly 481 and the fourth EM energy adjustment space 485 may have a cylindrical shape, a rectangular shape, or a square shape.

  In some embodiments, the microwave source 450 may be coupled to the fourth resonator assembly 481. In addition, one or more RF sources (not shown) may be coupled to the fourth resonator subsystem 480. Microwave source 450 may be coupled to matching network 452. Matching network 452 may be coupled to coupling network 454. Alternatively, multiple matching networks (not shown) or multiple coupling networks (not shown) may be coupled to the fourth resonator subsystem 480. The coupling network 454 may be removably coupled to the upper resonator wall 484 of the fourth resonator assembly 481 and may be used to provide microwave energy to the fourth EM energy conditioning space 485. Alternatively, other coupling configurations may be used.

First plasma adjusting rod (470a, 475a) includes a first may extend so as to enter into the inside process space 415 of the first position _{(x 2a)} in the first isolation protection space 473a is set to the first protection assembly in 472a One plasma adjustment unit 470a and a first EM energy adjustment unit 475a that can extend to enter the fourth EM energy adjustment space 485 at the first position (x _1a ) may be included. The first isolation assembly 464b positions the first plasma adjustment unit 470a at the first plasma adjustment distance 471a in the first isolation protection space 473a set in the first protection assembly 472a (first plasma The first plasma adjustment unit 470a may be extended to the adjustment distance 471a). For example, the first plasma adjustment distance 471a may vary from about 10 mm to about 400 mm, and the first plasma adjustment distance 471a may be wavelength dependent and may vary from about (λ / 4) to about (10λ).

The first EM coupling region 462a may be set at a first EM coupling distance 476a from the lower resonator wall 483 that defines the fourth EM energy tuning space 485, and the first EM tuning unit 475a may enter the first EM coupling region 462a. Can extend. The first EM adjustment unit 475a may obtain first adjustable microwave energy from the first EM coupling region 462a. The first microwave energy may be transferred to the process space 415 as the first plasma adjustment energy at the first position (x _2a ) by using the first plasma adjustment unit 470a. The first EM coupling region 462a may include an adjustable electric field region, an adjustable magnetic field region, a maximum field region, a maximum voltage region, a maximum energy region, or a maximum current region, or a combination thereof. For example, the first EM coupling distance 476a may vary from about 0.01 mm to about 10 mm, and the first EM coupling distance 476a may be wavelength dependent and vary from about (λ / 4) to about (10λ).

  The first plasma conditioning slab 461a may be coupled to the first control assembly 460a, and the first control assembly 460a may be coupled to the first plasma regulation rod (470a, 475a) in the fourth EM energy regulation space 485. It may be used to move the first plasma adjustment slab 461a by the first EM adjustment distance 477a with respect to the 1EM adjustment unit 475a. The first control assembly 460a and the first plasma adjustment slab 461a are used to optimize the microwave energy coupled from the first EM coupling region 462a to the first EM adjustment portion 475a of the first plasma adjustment rod (470a, 475a). May be used. For example, the first EM adjustment distance 477a may be set between the first EM adjustment unit 475a and the first plasma adjustment slab 461a in the fourth EM energy adjustment space 485, and the first EM adjustment distance 477a is about 0.01 mm to about mm. It may vary between about 1 mm.

The first plasma conditioning rod (470a, 475a) may have a first diameter (d _1a ). The first diameter (d _1a ) may vary from about 0.01 mm to about 1 mm. The first isolation assembly 464b may have a first diameter (D _1a ). The first diameter (D _1a ) may vary from about 1 mm to about 10 mm.

The first EM adjustment unit 475a, the first EM coupling region 462a, the first control assembly 460a, and the first plasma adjustment slab 461a may have a first xy plane offset (x _1a ). For example, the first xy plane offset (x _1a ) may be set for the resonator wall 482b and may vary from about (λ / 4) to about (10λ) depending on the wavelength. The first control assembly 460a may have a cylindrical configuration and a diameter (d _2a ) that can vary from about 1 mm to about 5 mm. The first plasma control slab 461a may have a diameter (D _2a ). The diameter (D _2a ) may vary from about 1 mm to about 10 mm.

Second plasma adjusting rod (470b, 475b) are first may extend so as to enter into the in-process space 415 of the 2 position _{(x 2a)} with second isolating protective space 473b set in the second protection assembly in 472b There may be provided a second plasma adjustment unit 470b and a second EM energy adjustment unit 475b that can extend to enter the fourth EM energy adjustment space 485 at the second xy plane position (x _1b ). The second isolation assembly 464b positions the second plasma adjustment unit 470b at the second plasma adjustment distance 471b in the third isolation protection space 473c set in the third protection assembly 472c (second plasma). The second plasma adjustment unit 470b may be extended to the adjustment distance 471b). For example, the second plasma adjustment distance 471b may vary from about 10 mm to about 400 mm, and the second plasma adjustment distance 471b may be wavelength dependent and may vary from about (λ / 4) to about (10λ).

The second EM coupling region 462b may be set at a second EM coupling distance 476b from the lower resonator wall 483 in the fourth EM energy tuning space 485, and the second EM tuning unit 475b extends to enter the second EM coupling region 462b. obtain. The second EM adjuster 475b may obtain second adjustable microwave energy from the second EM coupling region 462b. The second microwave energy may be transferred to the process space 415 as the second plasma adjustment energy at the second position (x _2b ) by using the second plasma adjustment unit 470b. The second EM coupling region 462b may include an adjustable electric field region, an adjustable magnetic field region, a maximum field region, a maximum voltage region, a maximum energy region, or a maximum current region, or a combination thereof. For example, the second EM coupling distance 476b may vary from about 0.01 mm to about 10 mm, and the second EM coupling distance 476b may be wavelength dependent and vary from about (λ / 4) to about (10λ).

  The second plasma conditioning slab 461b may be coupled to the second control assembly 460b, and the second control assembly 460b is within the fourth EM energy regulation space 485 relative to the second plasma regulation rod (470b, 475b). The second plasma adjustment slab 461b may be moved with the 263b by the second EM adjustment distance 477b. The second control assembly 460b and the second plasma adjustment slab 461b are used to optimize the microwave energy coupled from the second EM coupling region 462b to the second EM tuning part 475b of the second plasma tuning rod (470b, 475b). May be used. For example, the second EM adjustment distance 477b may be set between the second EM adjustment unit 475b and the second plasma adjustment slab 461b in the fourth EM energy adjustment space 485, and the second EM adjustment distance 477b may be about 0.01 mm to about 0.25 mm. It may vary between about 1 mm.

The second plasma control rod (470b, 475b) may have a second diameter (d _1b ). The second diameter (d _1b ) may vary from about 0.01 mm to about 1 mm. The second isolation assembly 464b may have a second diameter (D _1b ). The second diameter (D _1b ) may vary from about 1 mm to about 10 mm.

The second EM adjustment unit 475b, the second EM coupling region 462b, the second control assembly 460b, and the second plasma adjustment slab 461b may have a second x plane offset (x _1b ). For example, the first x-plane offset (x _1b ) may be set with respect to the resonator wall 482b and may vary from about (λ / 4) to about (10λ) depending on the wavelength. The second control assembly 460b may have a cylindrical configuration and a diameter (d _2b ) that can vary from about 1 mm to about 5 mm. The second plasma regulation slab 461b may have a diameter (D _2b ). The diameter (D _2b ) may vary from about 1 mm to about 10 mm.

The first resonator assembly 481c may be coupled to the first chamber wall 412a with a first xy plane offset (y _3c ) and may have a first height (y _4c ). For example, the first xy plane offset (y _3c ) may be set relative to the lower chamber wall 412 and may be wavelength dependent and vary from about (λ / 4) to about (100λ). In addition, the first height (y _4c ) may vary from about (λ / 4) to about (10λ).

  In some embodiments, the first EM source 435c may be coupled to the first resonator assembly 481c, and the first EM source 435c may operate at a frequency from about 500 MHz to about 5000 MHz. The controller 495 may be coupled to the first resonator assembly 481c and the first EM source 435c. The controller 495 uses a process recipe to set, control, and optimize the first resonator assembly 481c and the first EM source 435c, so that the third EM coupling region 462c and the process space within the third EM energy adjustment space 485c are used. The uniformity of the plasma within 415 may be controlled.

The third plasma adjusting rod (470c, 475c) extends so as to enter into the third isolation protection space 473c of the third position xy plane in process space 415 _{(x 2c)} is set to the third protection assembly within 472c A third plasma adjustment unit 470c may be provided, and a third EM energy adjustment unit 475c that may extend to enter the fourth EM energy adjustment space 485 at the third xy plane position (x _1c ). The third isolation assembly 464c positions the third plasma adjustment unit 470c at the third plasma adjustment distance 471c in the third isolation protection space 473c set in the third protection assembly 472c (third plasma The third plasma adjustment unit 470c may be extended to the adjustment distance 471c). For example, the third plasma adjustment distance 471c may vary from about 10 mm to about 400 mm, and the third plasma adjustment distance 471c may be wavelength dependent and may vary from about (λ / 4) to about (10λ).

The third EM coupling region 462c may be set at a third EM coupling distance 476c from at least one wall in the first resonant subset 481c that defines the fourth EM energy tuning space 485, and the third EM tuning unit 475c It can extend into the 3EM coupling region 462c. The third EM adjuster 475c may obtain third adjustable microwave energy from the third EM coupling region 462c. The third microwave energy may be transferred to the process space 415 as the third plasma adjustment energy at the third xy plane position (x _2c ) by using the third plasma adjustment unit 470c. The third EM coupling region 462c may include an adjustable electric field region, an adjustable magnetic field region, a maximum field region, a maximum voltage region, a maximum energy region, or a maximum current region, or a combination thereof. For example, the third EM coupling distance 476c may vary from about 0.01 mm to about 10 mm, and the third EM coupling distance 476c may be wavelength dependent and vary from about (λ / 4) to about (10λ).

  The third plasma adjustment slab 461c may be coupled to the third control assembly 460c, and the third control assembly 460c is in the fourth EM energy adjustment space 485 to the third plasma adjustment rod (470c, 475c). And may be used to move the third plasma adjustment slab 461c by the third EM adjustment distance 477c. The third control assembly 460c and the third plasma adjustment slab 461c are used to optimize the microwave energy coupled from the third EM coupling region 462a to the third EM adjustment portion 475c of the third plasma adjustment rod (470c, 475c). May be used. For example, the third EM adjustment distance 477c may be set between the third EM adjustment unit 475c and the third plasma adjustment slab 461c in the fourth EM energy adjustment space 485, and the third EM adjustment distance 477c may be about 0.01 mm to about 0.75 mm. It may vary between about 1 mm.

The third plasma control rod (470c, 475c) may have a third diameter (d _1c ). The third diameter (d _1c ) may vary from about 0.01 mm to about 1 mm. The third isolation assembly 464c may have a first diameter (D _1c ). The third diameter (D _1c ) may vary from about 1 mm to about 10 mm.

The third EM adjustment unit 475c, the third EM coupling region 462c, the third control assembly 460c, and the third plasma adjustment slab 461c may have a third xy plane offset (x _1c ). The third xy plane offset (x _1c ) may vary from about (λ / 4) to about (10λ) depending on the wavelength. The third control assembly 460c may have a cylindrical configuration and a diameter (d _2c ) that can vary from about 1 mm to about 5 mm. The third plasma regulation slab 461c may have a diameter (D _2c ). The diameter (D _2c ) may vary from about 1 mm to about 10 mm.

The second resonator subset 481d may be coupled to the second chamber wall 412b with a second xy plane offset (y _3d ) and have a second height (y _4d ). For example, the second xy plane offset (y _3d ) may be set for the lower chamber wall 412 and may vary from about (λ / 4) to about (100λ) depending on the wavelength. In addition, the second height (y _4d ) may vary from about (λ / 4) to about (10λ).

  In some embodiments, the second EM source 435d may be coupled to the second resonator subset 481d, and the second EM source 435d may operate at a frequency from about 500 MHz to about 5000 MHz. The controller 495 may be coupled to the second resonator assembly 481d and the second EM source 435d. The controller 495 uses a process recipe that sets, controls, and optimizes the second resonator assembly 481d and the second EM source 435d to provide a fourth EM coupling region 462d and a process space within the fourth EM energy conditioning space 485d. The uniformity of the plasma within 415 may be controlled.

The fourth plasma control rod (470d, 475d) may extend to enter the fourth isolation protection space 473d set in the fourth protection assembly 472d at the fourth xy plane position (y _2d ) in the process space 415. A fourth plasma adjustment unit 470d and a fourth EM adjustment unit 475d that may extend to enter the fourth EM energy adjustment space 485d at the fourth xy plane position (y _1c ) may be included. The fourth isolation assembly 464d positions the fourth plasma adjustment unit 470d at the fourth plasma adjustment distance 471d in the fourth isolation protection space 473d set in the fourth protection assembly 472d (fourth plasma adjustment distance). The fourth plasma adjustment unit 470d may be extended to 471d). For example, the fourth plasma adjustment distance 471d may vary from about 10 mm to about 400 mm, and the fourth plasma adjustment distance 471d may be wavelength dependent and may vary from about (λ / 4) to about (10λ).

The fourth EM coupling region 462d may be set to a fourth EM coupling distance 476d from at least one wall in the second resonator subset 481d that defines the fourth EM energy conditioning space 485d. The fourth EM adjustment unit 475d may extend to enter the fourth EM coupling region 462d. The fourth EM adjustment unit 475d may obtain fourth adjustable microwave energy from the fourth EM coupling region 462d. The fourth microwave energy may be transferred to the fourth xy plane position (y _2d ) of the process space as the fourth plasma adjustment energy by using the fourth plasma adjustment unit 470d. The fourth EM coupling region 462d may include an adjustable electric field region, an adjustable magnetic field region, a maximum field region, a maximum voltage region, a maximum energy region, or a maximum current region, or a combination thereof. For example, the fourth EM coupling distance 476d may vary from about 0.01 mm to about 10 mm, and the fourth EM coupling distance 476d may be wavelength dependent and vary from about (λ / 4) to about (10λ).

  The fourth plasma adjustment slab 461d may be coupled to the fourth control assembly 460d and may be coupled to the fourth EM adjustment unit 475d of the fourth plasma adjustment rod (470d, 475d) in the fourth EM energy adjustment space 485d. It may be used to move the fourth plasma conditioning slab 461 to 463 by 4EM adjustment distance 477d. The fourth control assembly 460d and the fourth plasma adjustment slab 461d are used to optimize the microwave energy coupled from the fourth EM coupling region 462d to the fourth EM adjustment portion 475d of the fourth plasma adjustment rod (470d, 475d). It ’s good. For example, the fourth EM adjustment distance 477d may be set between the fourth EM adjustment unit 475d and the fourth plasma adjustment slab 461d in the fourth EM energy adjustment space 485, and the fourth EM adjustment distance 477d may be about 0.01 mm to about mm. It can vary up to about 1 mm.

The fourth plasma conditioning rod (470d, 475d) may have a fourth diameter (d _1d ). The fourth diameter (d _1d ) may vary from about 0.01 mm to about 1 mm. The fourth isolation assembly 464d may have a fourth diameter (D _1d ). The fourth diameter (D _1d ) may vary from about 1 mm to about 10 mm.

The fourth EM adjustment unit 475d, the fourth EM coupling region 462d, the fourth control assembly 460d, and the fourth plasma adjustment slab 461d may have a fourth xy plane offset (y _1d ). The fourth xy plane offset (y _1d ) is wavelength dependent and may vary from about (λ / 4) to about (10λ). The fourth control assembly 460d may have a cylindrical configuration and a fourth diameter (d _1d ) that may vary from about 1 mm to about 5 mm. The fourth plasma conditioning slab 461d may have a fourth diameter (D _1d ). The fourth diameter (D _1d ) may vary from about 1 mm to about 5 mm.

  The control aggregates (460a, 460b, and 460c) may be coupled to the controller 495 at 496. The controller 495 sets, controls, and optimizes the EM adjustment distances (477a, 477b, 477c, and 477d) so that the EM coupling region (462a) within the EM energy adjustment space (485, 485c, and 485d). 462b, 462c, and 462d) and the plasma uniformity within the process space 415 may be controlled. Controller 495 may be coupled to microwave source 450, matching network 452, and coupling network 454. The controller 495 uses process recipes to set, control, and optimize the microwave source 450, the matching network 452, and the coupling network 454 so that the EM coupling regions (462a, 462b, 462c, 462d) and the uniformity of the plasma in the process space 415 may be controlled. For example, the microwave source 450 may operate at a frequency between about 500 MHz and about 5000 MHz. In addition, the controller 495 may be coupled to the resonator sensor 406 and the process sensor 407, and the controller 495 is a process for setting, controlling, and optimizing data from the resonator sensor 406 and the process sensor 407. The recipe may be used to control the uniformity of the plasma in the EM coupling regions (462a, 462b, 462c, and 462d) and process space in the EM energy conditioning space (485, 485c, and 485d).

The front surface of the fourth microwave resonator system 400 includes an xy plan view of the cavity control assembly 455 shown coupled to the front surface of the cavity tuning slab 455. The cavity control assembly 455 may have a first diameter (d _1aa ). The first diameter (d _1aa ) may vary from about 0.01 mm to about 1 mm. The cavity conditioning slab 455 may have a second diameter (D _1aa ). The second diameter (D _1aa ) may vary from about 1 mm to about 10 mm. Cavity control assembly 455 and cavity adjustment slab 455 may have a y-plane offset (y _1aa ). The first xy plane offset (y _1aa ) may vary from about 1 mm to about 10 mm.

  The cavity control assembly 455 may be used to move the cavity adjustment slab 455 by the second cavity adjustment distance 458 within the first EM energy adjustment space 285. Controller 495 may be coupled to cavity control assembly 455 at 496. Controller 495 may control and maintain plasma uniformity in process space 415 in real time by using a process recipe that sets, controls, and optimizes cavity adjustment distance 458. For example, the second cavity adjustment distance 458 may vary from about 0.01 mm to about 10 mm, and the second cavity adjustment distance 458 may be wavelength dependent and vary from about (λ / 16) to about (10λ). good.

  Still referring to FIG. 4A, a substrate holder 420 and a lower electrode 421 are shown. If present, the lower electrode 421 may be used to couple radio frequency (RF) power to the plasma in the process space 415. For example, the lower electrode 421 may be electrically biased with an RF voltage by transmitting RF power from the RF generator 430 to the lower electrode 421 via the impedance matching network 431 and the RF sensor 432. The RF bias can function to heat the electrodes to generate and / or maintain the plasma. A typical frequency for the RF bias may range from 1 MHz to 100 MHz, and is preferably 1455 MHz. Alternatively, RF power may be applied to the lower electrode 421 at multiple frequencies. Furthermore, the impedance matching network 431 may function to maximize the transfer of RF power to the plasma within the process chamber 410 by suppressing reflected power. Various network structures and automatic control methods may be utilized. The RF sensor 432 may measure the power level and / or frequency associated with the fundamental signal, harmonic signal, and / or intermodulation signal. In addition, controller 495 is coupled to RF generator 430, impedance matching network 431, and RF sensor 432 at 496, and controller 495 includes RF generator 430, impedance matching network 431, and RF sensor 432. EM coupling regions (462a, 462b, 462c, and 462d) within the EM energy conditioning space (485, 485c, and 485d) by using process recipes to set, control, and optimize data exchanged between ) And the uniformity of the plasma in the process space.

  Within the fourth microwave resonator system 400 is a pressure control system 490 that is coupled to the process chamber 410 and configured to exhaust the process chamber 410 as well as control the pressure within the process chamber 410. And an exhaust port 491 may be provided. Alternatively, pressure control system 490 and / or exhaust port 491 may not be required.

  As shown in FIG. 4A, the fourth microwave resonator system 400 may include a first gas supply system 440 coupled to the first supply element 441, and the first supply element 441 is a process chamber. 410 may be coupled. The first supply element 441 is configured to introduce a first process gas into the process space 415 and may include a flow control and / or flow measurement device. Alternatively, a second gas supply system and a second supply element may be required.

During dry plasma etching, the process gas may include an etchant, a passivant, or an inert gas, or a mixture thereof. For example, when plasma etching a dielectric film, such as silicon oxide (SiO _x ) or silicon nitride (Si _x N _y ), the plasma etching gas composition is typically a fluorocarbon-based chemical (C _x F _y ). - for example _{C 4 F 8, C 5 F} 8, C 3 F 6, C 4 F 6, CF 4 or the like - include, and / or a fluorohydrocarbon-based chemicals _{(C x H y F z)} - for example CHF ₃ , CH ₂ F _2, etc. and may contain at least one of an inert gas, oxygen, CO, or CO ₂ . In addition, for example, when etching polycrystalline silicon (polysilicon), the plasma etching gas composition typically contains a halogen-containing gas, such as HBr, Cl ₂ , NF ₃ , or SF ₆ , or mixtures thereof. And may contain a fluorohydrocarbon chemical (C _x H _y F _z ) —for example, CHF ₃ , CH ₂ F _2, etc.—and inert gas, oxygen, CO, or CO ₂ or these 2 It may have at least one of two or more mixtures. During plasma deposition, the process gas may include a film forming precursor, a reducing gas, or an inert gas, or a mixture of two or more thereof.

FIG. 4B represents the top surface of the fourth resonator assembly according to an embodiment of the present invention. The fourth resonator assembly 481 may have a total length (x _T1 ) and a total height (z _T1 ) in the xz plane. For example, the total length (x _T1 ) can vary from about 10 mm to about 500 mm, and the total height (z _T1 ) can vary from about 10 mm to about 1000 mm.

The top surface of the fourth resonator subsystem 480 includes the xz plane of the first control aggregate 460a, shown surrounded by the top surface (dashed line) of the first plasma conditioning slab 461a. The first control assembly 460a may have a first diameter (d _2a ). The first diameter (d _2a ) may vary from about 0.01 mm to about 1 mm. The first plasma conditioning slab 461a may have a second diameter (D _2a ). The second diameter (D _2a ) may vary from about 1 mm to about 10 mm. The first control assembly 460a and the first plasma conditioning slab 461a may have a first x plane offset (x _1a ). The first x plane offset (x _1a ) may vary from about 1 mm to about 10 mm. Alternatively, the first control assembly 460a and the first plasma conditioning slab 461a may have different first xz plane offsets (x _1a ). The first control assembly 460a and the first plasma conditioning slab 461a may have a first xz plane offset (z _1a ). The first z-plane offset (z _1a ) may vary from about 1 mm to about 10 mm. Alternatively, the first control assembly 460a and the first plasma conditioning slab 461a may have different first xz plane offsets (z _1a ).

In addition, the top surface of the fourth resonator subsystem 480 includes the xz plane of the second control assembly 460b shown shown surrounded by the top surface (dashed line) of the second plasma conditioning slab 461b. The second control aggregate 460b may have a first diameter (d _2b ). The first diameter (d _2b ) may vary from about 0.01 mm to about 1 mm. The second plasma conditioning slab 461b may have a second diameter (D _2b ). The second diameter (D _2b ) may vary from about 1 mm to about 10 mm. The second control aggregate 460b and the second plasma conditioning slab 461b may have a second xz plane offset (x _1b ). The second xz plane offset (x _1b ) may vary from about 1 mm to about 10 mm. Alternatively, the second control assembly 460b and the second plasma conditioning slab 461b may have different second xz plane offsets (x _1b ). The second control aggregate 460b and the second plasma conditioning slab 461b may have a second xz plane offset (z _1b ). The second xz plane offset (z _1b ) may vary from about 1 mm to about 10 mm. Alternatively, the second control assembly 460b and the second plasma conditioning slab 461b may have different second xz plane offsets (z _1a ).

FIG. 4B shows the top surface of the resonator walls (482a, 482b, 483, and 484). The resonator wall 482a may have a wall thickness (t _a ). The wall thickness _{(t a)} may vary from about 1mm~ about 5 mm. The resonator wall 482b may have a wall thickness (t _b ). The wall thickness (t _b ) may vary from about 1 mm to about 5 mm. The resonator walls (482a, 482b) may have a wall thickness (t). The wall thickness (t) may vary from about 1 mm to about 5 mm.

The top surface of the fourth microwave resonator assembly 481 includes an xz plan view of the cavity control assembly 455 shown coupled to the top surface of the cavity tuning slab 455. The cavity control assembly 455 may have a first diameter (d _1aa ). The first diameter (d _1aa ) may vary from about 0.01 mm to about 1 mm. The cavity conditioning slab 455 may have a second diameter (D _1aa ). The second diameter (D _1aa ) may vary from about 1 mm to about 10 mm. The cavity control assembly 455 and the cavity conditioning slab 455 may have a first xz plane offset (z _1aa ). The first xz plane offset (z _1aa ) may vary from about 1 mm to about 10 mm.

FIG. 4C shows a side view of the fourth microwave resonator system 400. The side view shows a yz plan view of a process chamber 410 that can be configured by using a first interface assembly 465a and a plurality of chamber walls 312 coupled to the first interface assembly 465a. Process space 415 may be configured within process chamber 410. For example, the chamber wall 312 may have a wall thickness (t), and the wall thickness (t) may vary between about 1 mm and about 5 mm. The first interface assembly 465a may have a first interface thickness (t _i1 ). The first interface thickness (t _i1 ) may vary from about 1 mm to about 10 mm.

  The side view shows a yz plan view of a fourth resonator subsystem 480 that may include a fourth resonator assembly 481 that may be configured with a plurality of resonator walls (482a, 482b, 483, and 484). . For example, the resonator walls (482a, 482b, 483, and 484) may include a dielectric material such as quartz and may define a fourth EM energy conditioning space 485 therein. In addition, one or more resonator sensors 406 may be coupled to the fourth EM energy conditioning space 485 to obtain first resonator data.

The resonator wall 482a may have a wall thickness (t _a ). The wall thickness _{(t a)} may vary from about 1mm~ about 5 mm. The resonator wall 482b may have a wall thickness (t _b ). The wall thickness (t _b ) may vary from about 1 mm to about 5 mm. The resonator wall 482 may have a wall thickness (t). The wall thickness (t) may vary from about 1 mm to about 5 mm.

In some examples, the first interface assembly 465a may be used to removably couple the fourth resonator assembly 481 and the process chamber 410. The first interface assembly 465a may have a first interface thickness (t _i1 ). The wall thickness (t _i1 ) may vary from about 1 mm to about 10 mm. Alternatively, the first interface aggregate 465a may not be required or may have a different configuration. The first interface assembly 465a may include one or more isolation assemblies (464a and 464b). Each of the isolation assemblies (464a and 464b) may be removably coupled to the lower resonator wall 483 and may be removably coupled to one or more first interface assemblies.

In addition, the second interface assembly 465b may be coupled to the fourth resonator assembly 481 by using the upper resonator wall 484. The second interface assembly 465b may have a second interface thickness (t _i2 ). The wall thickness (t _i2 ) may vary from about 1 mm to about 10 mm. Alternatively, the second interface aggregate 465b may not be required or may have a different configuration. The second interface aggregate 465b may include one or more control aggregates (460a and 460b). Each of the control assemblies (460a and 460b) may be removably coupled to the top resonator wall 484 and may be removably coupled to the second interface assembly 465b. Alternatively, the control assemblies (460a and 460b) may be coupled to the upper resonator wall 484, and the second interface assembly 465b may be omitted.

  The fourth microwave resonator system 400 may be configured to generate a plasma in the process space 415 as the substrate holder 420 and the substrate move throughout the process space 415. The fourth microwave resonator system 400 may be configured to process 200 mm substrates, 300 mm substrates, or larger sized substrates. In addition, as will be appreciated by those skilled in the art, the fourth microwave resonator system 400 can be configured to process an annular, square, or rectangular substrate, wafer, or LCD, regardless of size. As such, cylindrical, square, and / or rectangular chambers may be configured. Thus, although aspects of the invention have been described in connection with processing a semiconductor substrate, the invention is not so limited.

  In other embodiments, the fourth resonator assembly 481 may have a plurality of resonant cavities (not shown) therein. In other embodiments, the fourth resonator system 480 may include a plurality of resonator subsystems having one or more resonant cavities therein. In various systems, the fourth resonator assembly 481 and the fourth EM energy adjustment space 485 may have a cylindrical shape, a rectangular shape, or a square shape.

  In FIG. 4C, the microwave source 450 is shown coupled to the fourth resonator assembly 481. Microwave source 450 may be coupled to matching network 452. Matching network 452 may be coupled to coupling network 454. Alternatively, multiple matching networks (not shown) or multiple coupling networks (not shown) may be coupled to the fourth resonator subsystem 480. The coupling network 454 may be removably coupled to the upper resonator wall 484 of the fourth resonator assembly 481 and may be used to provide microwave energy to the fourth EM energy conditioning space 485. Alternatively, other coupling configurations may be used.

The side view is in a first set of isolated protection spaces (473a and 473b) set in a first set of protection assemblies (472a and 472b) at a first yz plane position (z2a _-c ) in the process space 415. A first set of first plasma modulators (470a and 470b) that can extend into the first EM energy adjustment space 485 at a second yz plane position (z _1a-c ). FIG. 4 includes a yz plan view of a first set of plasma conditioning rods ((470a, 475a) and (470b, 475b)) that may have a set of EM energy adjustments (475a and 475b). The first set of isolated aggregates (464a and 464b) is the first position defined using (z _2a-c ) in the process space 415, and the first set of isolated assemblies (464a and 464b) is One set of plasma regulators (470a and 470b) may be positioned (extending the first set of plasma regulators (470a and 470b) to the plasma regulation distance (471a and 471b)). For example, the plasma conditioning distances (471a and 471b) may vary from about 10 mm to about 400 mm, and may be wavelength dependent and vary from about (λ / 4) to about (10λ).

The first set of EM coupling regions (462a and 462b) may be set by the EM coupling distance (476a and 476b) from the lower resonator wall 483 in the fourth EM energy adjustment space 485, and the first set of EM adjustments. Portions (475a and 475b) may extend to enter the first set of EM coupling regions (462a and 462b). The first set of EM adjusters (475a and 475b) may obtain adjustable microwave energy from the first set of EM coupling regions (462a and 462b). Adjustable microwave energy is transferred to the process space 415 as plasma control energy controllable at the first z-plane position (x _2a-c ) by using the first set of plasma control units (470a and 470b). good. The first set of EM coupling regions (462a, 462b, and 462c) includes an adjustable electric field region, an adjustable magnetic field region, a maximum field region, a maximum voltage region, a maximum energy region, or a maximum current region, or a combination thereof. May be included. For example, the first set of EM coupling distances (476a and 476b) may vary from about 0.01 mm to about 10 mm, and the first set of EM coupling distances (476a and 476b) are wavelength dependent and about (λ / 4) to about (10λ).

  The first set of plasma conditioning slabs (461a and 461b) is coupled to the first set of control assemblies (460a and 460b), and the first set of control assemblies (460a and 460b) is a fourth EM energy adjustment. In the space 485, the first set of plasma adjustment slabs (461a, 461b, and 461c) are moved by the first set of EM adjustment distances (477a and 477b) relative to the first set of EM adjustment units (475a and 475b). May be used for The first set of control assemblies (460a and 460b) and the first set of plasma conditioning slabs (461a and 461b) are connected from the first set of EM coupling regions (462a and 462b) to the first set of plasma conditioning rods ((470a 475a) and (470b, 475b)) may be used to optimize the microwave energy coupled to the first set of EM adjustments (475a and 475b). For example, the first set of EM adjustment distances (477a and 477b) includes the first set of EM adjustment units (475a and 475b) and the first set of plasma adjustment slabs (461a and 461b) in the fourth EM energy adjustment space 485. And the first set of EM adjustment distances (477a and 477b) may vary from about 0.01 mm to about 1 mm.

A first set of protection assemblies (472a and 472b) may be coupled to the first set of isolation assemblies (464a and 464b). The first set of protection aggregates (472a and 472b) may be disposed at a first location (z _2a-c ) within the process space 415. The set of protection assemblies (472a, 472b, and 472c) has a first set of isolated protection spaces (473a and 473b) inside and may have an insertion length (474a and 474b). For example, the insertion length (474a and 474b) may vary from about 1 mm to about 10 mm in the yz plane, and the protective assembly (472a and 472b) and the isolation assembly (464a and 464b) may include one or more It may be configured using a dielectric material.

The first set of plasma conditioning rods ((470a, 475a) and (470b, 475b)) may include a dielectric material and may have a first diameter (d _1a ). The first diameter (d _1a ) may vary from about 0.01 mm to about 1 mm. The first set of isolation assemblies (464b and 464b) and the first set of protection assemblies (472a and 472b) may have a first diameter (D _1a ). The first diameter (D _1a ) may vary from about 1 mm to about 10 mm. Alternatively, the isolation assemblies (464a and 464b) and the first set of protection assemblies (472a and 472b) may each have a different diameter.

A first set of EM adjustments (475a and 475b), a first set of EM coupling regions (462a and 462b), a first set of control assemblies (460a and 460b), and a first set of plasma adjustment slabs (461a and 461a) 461b) may have a z-plane offset (z _1a-c ). For example, the yz plane offset (z _1a-c ) may be set for the lower resonator wall 483 and may vary from about (λ / 4) to about (10λ) depending on the wavelength. The first set of control aggregates (460a and 460b) may include a dielectric material and may have a cylindrical configuration and a diameter (d _2a-c ) that may vary from about 1 mm to about 5 mm. The first set of plasma conditioning slabs (461a and 461b) may include a dielectric material and have a diameter (D _2a-b ). The diameter (D _2a-b ) may vary from about 1 mm to about 10 mm.

The first resonator subset 481c may be coupled to the first chamber wall 412a with a first yz plane offset (y _3c ) and may have a first height (y _4c ). For example, the first yz plane offset (y _3c ) may be set with respect to the lower chamber wall 412 and may vary from about (λ / 4) to about (100λ) depending on the wavelength. In addition, the first height (y _4c ) may vary from about (λ / 4) to about (10λ).

  In some embodiments, the first EM source 435c may be coupled to the first resonator subset 481c, and the first EM source 435c may operate at a frequency from about 500 MHz to about 5000 MHz. The controller 495 may be coupled to the first resonator subset 481c and the first EM source 435c. The controller 495 uses the process recipe to set, control, and optimize the first resonator subset 481c and the first EM source 435c so that the EM coupling region in the EM adjustment space (485, 485c, and 485d). (462a, 462b, 462c, and 462d) and plasma uniformity within the process space 415 may be controlled.

The third plasma control rod (470c, 475c) may extend to enter the third isolation protection space 473c set at the third xy plane position (y _2c ) in the third protection assembly 472c in the process space 415. A third plasma adjustment unit 470c and a third EM adjustment unit 475c that can extend to enter the third EM energy adjustment space 485c at the third xy plane position (y _1c ) may be included. The third isolation assembly 464c positions the third plasma adjustment unit 470c at the third plasma adjustment distance 471c in the third isolation protection space 473c set in the third protection assembly 472c (third plasma adjustment unit 470c). To the third plasma adjustment distance 471c). For example, the third plasma adjustment distance 471c may vary from about 10 mm to about 400 mm, and the third plasma adjustment distance 471c may be wavelength dependent and may vary from about (λ / 4) to about (10λ).

The third EM coupling region 462c may be set at a third EM coupling distance 476c from at least one wall in the first resonant subset 481c that defines the third EM energy conditioning space 485c. The third EM adjuster 475c may extend to enter the third EM coupling region 462c. The third EM adjuster 475c may obtain third adjustable microwave energy from the third EM coupling region 462c. The third microwave energy may be transferred to the process space 415 as the third plasma adjustment energy at the third xy plane position (y _2c ) by using the third plasma adjustment unit 470c. The third EM coupling region 462c may include an adjustable electric field region, an adjustable magnetic field region, a maximum field region, a maximum voltage region, a maximum energy region, or a maximum current region, or a combination thereof. For example, the third EM coupling distance 476c may vary from about 0.01 mm to about 10 mm, and the third EM coupling distance 476c may be wavelength dependent and vary from about (λ / 4) to about (10λ).

  The third plasma adjustment slab 461c may be coupled to the third control assembly 460c, and the third control assembly 460c is in the fourth EM energy adjustment space 485 to the third plasma adjustment rod (470c, 475c). And may be used to move the third plasma adjustment slab 461c by the third EM adjustment distance 477c. The third control assembly 460c and the third plasma adjustment slab 461c are used to optimize the microwave energy coupled from the third EM coupling region 462a to the third EM adjustment portion 475c of the third plasma adjustment rod (470c, 475c). May be used. For example, the third EM adjustment distance 477c may be set between the third EM adjustment unit 475c and the third plasma adjustment slab 461c in the fourth EM energy adjustment space 485, and the third EM adjustment distance 477c may be about 0.01 mm to about 0.75 mm. It may vary between about 1 mm.

The third plasma control rod (470c, 475c) may have a third diameter (d _1c ). The third diameter (d _1c ) may vary from about 0.01 mm to about 1 mm. The third isolation assembly 464c may have a first diameter (D _1c ). The third diameter (D _1c ) may vary from about 1 mm to about 10 mm.

The third EM adjustment unit 475c, the third EM coupling region 462c, the third control assembly 460c, and the third plasma adjustment slab 461c may have a third xy plane offset (x _1c ). The third xy plane offset (x _1c ) may vary from about (λ / 4) to about (10λ) depending on the wavelength. The third control assembly 460c may have a cylindrical configuration and a third diameter (d _2c ) that can vary from about 1 mm to about 5 mm. The third plasma regulation slab 461c may have a diameter (D _2c ). The third diameter (D _2c ) may vary from about 1 mm to about 10 mm.

The second resonator subset 481d may be coupled to the second chamber wall 412b with a second xy plane offset (y _3d ) and have a second height (y _4d ). For example, the second xy plane offset (y _3d ) may be set for the lower chamber wall 412 and may vary from about (λ / 4) to about (100λ) depending on the wavelength. In addition, the second height (y _4d ) may vary from about (λ / 4) to about (10λ).

  In some embodiments, the second EM source 435d may be coupled to the second resonator subset 481d, and the second EM source 435d may operate at a frequency from about 500 MHz to about 5000 MHz. The controller 495 may be coupled to the second resonator assembly 481d and the second EM source 435d. The controller 495 uses the process recipe to set, control, and optimize the second resonator assembly 481d and the second EM source 435d, so that the second EM energy adjustment space (485, 485c, and 485d) The uniformity of the plasma within the 4EM coupling regions (462a, 462b, 462c, and 462d) and the process space 415 may be controlled.

The fourth plasma control rod (470d, 475d) may extend to enter the fourth isolation protection space 473d set in the fourth protection assembly 472d at the fourth xy plane position (y _2d ) in the process space 415. A fourth plasma adjustment unit 470d and a fourth EM adjustment unit 475d that may extend to enter the fourth EM energy adjustment space 485d at the fourth xy plane position (y _1c ) may be included. The fourth isolation assembly 464d positions the fourth plasma adjustment unit 470d at the fourth plasma adjustment distance 471d in the fourth isolation protection space 473d set in the fourth protection assembly 472d (fourth plasma adjustment distance). The fourth plasma adjustment unit 470d may be extended to 471d). For example, the fourth plasma adjustment distance 471d may vary from about 10 mm to about 400 mm, and the fourth plasma adjustment distance 471d may be wavelength dependent and may vary from about (λ / 4) to about (10λ).

The fourth EM coupling region 462d may be set to a fourth EM coupling distance 476d from at least one wall in the second resonator subset 481d that defines the fourth EM energy conditioning space 485d. The fourth EM adjustment unit 475d may extend to enter the fourth EM coupling region 462d. The fourth EM adjustment unit 475d may obtain fourth adjustable microwave energy from the fourth EM coupling region 462d. The fourth microwave energy may be transferred to the fourth xy plane position (y _2d ) of the process space as the fourth plasma adjustment energy by using the fourth plasma adjustment unit 470d. The fourth EM coupling region 462d may include an adjustable electric field region, an adjustable magnetic field region, a maximum field region, a maximum voltage region, a maximum energy region, or a maximum current region, or a combination thereof. For example, the fourth EM coupling distance 476d may vary from about 0.01 mm to about 10 mm, and the fourth EM coupling distance 476d may be wavelength dependent and vary from about (λ / 4) to about (10λ).

  The fourth plasma conditioning slab 461d may be coupled to the fourth control assembly 460d, and the third control assembly 460d is within the fourth EM energy regulation space 485d with respect to the fourth plasma regulation rod (470d, 475d). The fourth plasma adjustment slab 461d may be moved to 463d by the fourth EM adjustment distance 477d. The fourth control assembly 460d and the fourth plasma regulation slab 461d are used to optimize the microwave energy coupled from the fourth EM coupling region 462d to the fourth EM regulation unit 475d of the fourth plasma regulation rod (470d, 475d). May be used. For example, the fourth EM adjustment distance 477d may be set between the fourth EM adjustment unit 475d and the fourth plasma adjustment slab 461d in the fourth EM energy adjustment space 485, and the fourth EM adjustment distance 477d is about 0.01 mm to about mm. It may vary between about 1 mm.

The fourth plasma conditioning rod (470d, 475d) may have a fourth diameter (d _1d ). The fourth diameter (d _1d ) may vary from about 0.01 mm to about 1 mm. The fourth isolation assembly 464d may have a fourth diameter (D _1d ). The fourth diameter (D _1c ) may vary from about 1 mm to about 10 mm.

The fourth EM adjustment unit 475d, the fourth EM coupling region 462d, the fourth control assembly 460d, and the fourth plasma adjustment slab 461d may have a fourth xy plane offset (x _1d ). The fourth xy plane offset (x _1d ) may vary from about (λ / 4) to about (10λ) depending on the wavelength. The fourth control assembly 460d may have a cylindrical configuration and a diameter (d _2c ) that can vary from about 1 mm to about 5 mm. The fourth plasma conditioning slab 461d may have a diameter (D _1d ). The diameter (D _1d ) may vary from about 1 mm to about 10 mm.

  As illustrated in FIG. 4C, the control aggregates (460a and 460b) may be coupled 496 to the controller 495. The controller 495 may control the uniformity of the plasma in the process space 415 by setting, controlling, and optimizing the EM adjustment distances (477a and 477b). Controller 495 may be coupled 496 to microwave source 450, matching network 452, and coupling network 454. The controller 495 uses the process recipe to set, control, and optimize the microwave source 450, the matching network 452, and the coupling network 454 so that the EM coupling region in the EM energy conditioning space (485, 485c, and 485d). (462a and 462b) and the uniformity of the plasma in the process space 415 may be controlled. For example, the microwave source 450 may operate at a frequency between about 500 MHz and about 5000 MHz. In addition, controller 495 may be coupled to resonator sensor 406 and process sensor 407 at 496, and controller 495 may set, control, and optimize data from resonator sensor 406 and process sensor 407. The process recipe may be used to control the EM coupling regions (462a, 462b, 462c and 462d) in the EM energy conditioning space 285 and the plasma uniformity in the process space 415.

The sides of the fourth microwave resonator system 400 include a yz plan view of the cavity control assembly 455 and a yz plan view of the cavity tuning slab 456. The cavity control assembly 455 may have a first diameter (d _1aa ). The first diameter (d _1aa ) may vary from about 0.01 mm to about 1 mm. The cavity conditioning slab 456 may have a second diameter (D _1aa ). The second diameter (D _1aa ) may vary from about 1 mm to about 10 mm. Cavity control assembly 455 and cavity adjustment slab 456 may have a first yz plane offset (y _1aa ). The first yz plane offset (y _1aa ) may vary from about 1 mm to about 10 mm.

  Still referring to FIG. 4C, the yz plane of the substrate holder 420 and the lower electrode 421 is shown. If present, the lower electrode 421 may be used to couple radio frequency (RF) power to the plasma in the process space 415. For example, the lower electrode 421 may be electrically biased with an RF voltage by transmitting RF power from the RF generator 430 to the lower electrode 421 via the impedance matching network 431 and the RF sensor 432. The RF bias can function to heat the electrodes to generate and / or maintain the plasma. A typical frequency for the RF bias may range from 1 MHz to 100 MHz, and is preferably 1455 MHz. Alternatively, RF power may be applied to the lower electrode 421 at multiple frequencies. Furthermore, the impedance matching network 431 may function to maximize the transfer of RF power to the plasma in the process chamber 465a by suppressing the reflected power. Various network structures and automatic control methods may be utilized. The RF sensor 432 may measure the power level and / or frequency associated with the fundamental signal, harmonic signal, and / or intermodulation signal. In addition, controller 495 is coupled to RF generator 430, impedance matching network 431, and RF sensor 432 at 496, and controller 495 includes RF generator 430, impedance matching network 431, and RF sensor 432. EM coupling regions (462a, 462b, 462c, and 462d) within the EM energy conditioning space (485, 485c, and 485d) by using process recipes to set, control, and optimize data exchanged between ) And plasma uniformity within the process space 415 may be controlled.

  A side of the fourth microwave resonator system 400 is coupled to the process chamber 465a and configured not only to control the pressure in the process chamber 465a, but also to evacuate the process chamber 465a and There may be a yz plane of the discharge port 491. Alternatively, pressure control system 490 and / or exhaust port 491 may not be required.

  As illustrated in FIG. 4C, the side surface may have a yz plane of the gas supply system 440, the supply element 441, and the process chamber 410. The supply element 441 may be configured to introduce process gas into the process space 415 around the process space 415.

During dry plasma etching, the process gas may include an etchant, a passivant, or an inert gas, or a mixture thereof. For example, when plasma etching a dielectric film, such as silicon oxide (SiO _x ) or silicon nitride (Si _x N _y ), the plasma etching gas composition is typically a fluorocarbon-based chemical (C _x F _y ). - for example _{C 4 F 8, C 5 F} 8, C 3 F 6, C 4 F 6, CF 4 or the like - include, and / or a fluorohydrocarbon-based chemicals _{(C x H y F z)} - for example CHF ₃ , CH ₂ F _2, etc. and may contain at least one of an inert gas, oxygen, CO, or CO ₂ . In addition, for example, when etching polycrystalline silicon (polysilicon), the plasma etching gas composition typically contains a halogen-containing gas, such as HBr, Cl ₂ , NF ₃ , or SF ₆ , or mixtures thereof. And may contain a fluorohydrocarbon chemical (C _x H _y F _z ) —for example, CHF ₃ , CH ₂ F _2, etc.—and inert gas, oxygen, CO, or CO ₂ or these 2 It may have at least one of two or more mixtures. During plasma deposition, the process gas may include a film forming precursor, a reducing gas, or an inert gas, or a mixture of two or more thereof.

5A-5D show various views of an exemplary plasma conditioning rod according to an embodiment of the present invention. FIG. 5A shows the front and side of a first exemplary plasma conditioning rod (570a, 575a). The first plasma control unit 570a may have a first length (y ₁₁ ). The first length (y ₁₁ ) may vary from about 1 mm to about 400 mm. The first EM adjustment unit 575a may have a length (y ₁₂ ). The length (y ₁₂ ) may vary from about 1 mm to about 400 mm. The first plasma adjustment unit 570a and the first EM adjustment unit 575a may have a first height (x ₁ ). The first height (x ₁ ) may vary from about 0.1 mm to about 10 mm. The first plasma adjustment unit 570a and the first EM adjustment unit 575a may have a first width (z ₁ ). The first width (z ₁ ) may vary from about 0.1 mm to about 10 mm. For example, the first plasma control rod (570a, 575a) may include a dielectric material, be circular, and have a dense cross section.

FIG. 5B shows the front and side surfaces of a second exemplary plasma conditioning rod (570b, 575b). The second plasma control unit 570b may have a second length (y ₂₁ ). The second length (y ₂₁ ) may vary from about 1 mm to about 400 mm. The second EM adjustment unit 575b may have a length (y ₂₂ ). The length (y ₂₂ ) may vary from about 1 mm to about 400 mm. The second plasma adjustment unit 570b and the second EM adjustment unit 575b may have a second height (x ₂ ). The second height (x ₂ ) may vary from about 0.1 mm to about 10 mm. The second plasma adjustment unit 570b and the second EM adjustment unit 575b may have a second width (z ₂ ). The second width (z ₂ ) may vary from about 0.1 mm to about 10 mm. For example, the second plasma control rod (570b, 575b) may include a dielectric material, be circular, and have a dense cross section.

FIG. 5C shows the front and side surfaces of a third exemplary plasma conditioning rod (570c, 575c). The third plasma control unit 570c may have a third length (y ₃₁ ). The third length (y ₃₁ ) may vary from about 1 mm to about 400 mm. The third EM adjustment unit 575c may have a length (y ₃₂ ). The length (y ₃₂ ) may vary from about 1 mm to about 400 mm. The third plasma adjustment unit 570c and the third EM adjustment unit 575c may have a third height (x ₃ ). The third height (x ₃ ) may vary from about 0.1 mm to about 10 mm. The third plasma adjustment unit 570c and the third EM adjustment unit 575c may have a third width (z ₃ ). The third width (z ₃ ) may vary from about 0.1 mm to about 10 mm. For example, the third plasma conditioning rod (570c, 575c) may include a dielectric material, be circular, and have a dense cross section.

FIG. 5D shows the front and side of a fourth exemplary plasma conditioning rod (570d, 575d). The fourth plasma control unit 570d may have a fourth length (y ₄₁ ). The fourth length (y ₄₁ ) may vary from about 1 mm to about 400 mm. The fourth EM adjustment unit 575d may have a length (y ₄₂ ). The length (y ₄₂ ) may vary from about 1 mm to about 400 mm. The fourth plasma adjustment unit 570d and the fourth EM adjustment unit 575d may have a fourth height (x ₄ ). The fourth height (x ₄ ) may vary from about 0.1 mm to about 10 mm. The fourth plasma adjustment unit 570d and the fourth EM adjustment unit 575d may have a fourth width (z ₄ ). The fourth width (z ₄ ) may vary from about 0.1 mm to about 10 mm. For example, the fourth plasma conditioning rod (570d, 575d) may include a dielectric material, be circular, and have a dense cross section.

6A-6D show various views of an exemplary plasma conditioning rod according to an embodiment of the present invention. FIG. 6A shows the front and side of a first exemplary plasma conditioning rod (670a, 675a). The first plasma control unit 670a may have a first length (y ₁₁ ). The first length (y ₁₁ ) may vary from about 1 mm to about 400 mm. The first EM adjustment unit 675a may have a length (y ₁₂ ). The length (y ₁₂ ) may vary from about 1 mm to about 400 mm. The first plasma adjustment unit 670a and the first EM adjustment unit 675a may have a first height (x ₁ ). The first height (x ₁ ) may vary from about 0.1 mm to about 10 mm. The first plasma adjustment unit 670a and the first EM adjustment unit 675a may have a first width (z ₁ ). The first width (z ₁ ) may vary from about 0.1 mm to about 10 mm. The first plasma adjustment unit 670a and the first EM adjustment unit 675a may have a first thickness (t _z1 ). The first thickness (t _z1 ) may vary from about 0.1 mm to about 10 mm. For example, the first plasma conditioning rod (670a, 675a) may include a dielectric material, be circular, and have a hollow or partially hollow cross section.

FIG. 6B shows the front and side surfaces of a second exemplary plasma conditioning rod (670b, 675b). The second plasma control unit 670b may have a second length (y ₂₁ ). The second length (y ₂₁ ) may vary from about 1 mm to about 400 mm. The second EM adjustment unit 675b may have a length (y ₂₂ ). The length (y ₂₂ ) may vary from about 1 mm to about 400 mm. The second plasma adjustment unit 670b and the second EM adjustment unit 675b may have a second height (x ₂ ). The second height (x ₂ ) may vary from about 0.1 mm to about 10 mm. The second plasma adjustment unit 670b and the second EM adjustment unit 675b may have a second width (z ₂ ). The second width (z ₂ ) may vary from about 0.1 mm to about 10 mm. The second plasma adjustment unit 670b and the second EM adjustment unit 675b may have a second thickness (t _z2 ). The second thickness (t _z2 ) may vary from about 0.1 mm to about 10 mm. For example, the second plasma conditioning rod (670b, 675b) includes a dielectric material and may be elliptical and have a hollow or partially hollow cross section.

FIG. 6C shows the front and side surfaces of a third exemplary plasma conditioning rod (670c, 675c). The third plasma control unit 670c may have a third length (y ₃₁ ). The third length (y ₃₁ ) may vary from about 1 mm to about 400 mm. The third EM adjustment unit 675c may have a length (y ₃₂ ). The length (y ₃₂ ) may vary from about 1 mm to about 400 mm. The third plasma adjustment unit 670c and the third EM adjustment unit 675c may have a third height (x ₃ ). The third height (x ₃ ) may vary from about 0.1 mm to about 10 mm. The third plasma adjustment unit 670c and the third EM adjustment unit 675c may have a third width (z ₃ ). The third width (z ₃ ) may vary from about 0.1 mm to about 10 mm. The third plasma adjustment unit 670c and the third EM adjustment unit 675c may have a third thickness (t _z3 and t _x3 ). The third thickness (t _z3 and t _x3 ) may vary from about 0.1 mm to about 10 mm. For example, the third plasma conditioning rod (670c, 675c) may include a dielectric material, be square, and have a hollow or partially hollow cross section.

FIG. 6D shows the front and side of a fourth exemplary plasma conditioning rod (670d, 675d). The fourth plasma control unit 670d may have a fourth length (y ₄₁ ). The fourth length (y ₄₁ ) may vary from about 1 mm to about 400 mm. The fourth EM adjustment unit 675d may have a length (y ₄₂ ). The length (y ₄₂ ) may vary from about 1 mm to about 400 mm. The fourth plasma adjustment unit 670d and the fourth EM adjustment unit 675d may have a fourth height (x ₄ ). The fourth height (x ₄ ) may vary from about 0.1 mm to about 10 mm. The fourth plasma adjustment unit 670d and the fourth EM adjustment unit 675d may have a fourth width (z ₄ ). The fourth width (z ₄ ) may vary from about 0.1 mm to about 10 mm. The fourth plasma adjustment unit 670d and the fourth EM adjustment unit 675d may have a fourth thickness (t _z4 and t _x4 ). The fourth thickness (t _z4 and t _x4 ) may vary from about 0.1 mm to about 10 mm. For example, the fourth plasma conditioning rod (670d, 675d) includes a dielectric material, may be rectangular, and may have a hollow or partially hollow cross section.

7A-7D show various views of an exemplary plasma conditioning rod according to an embodiment of the present invention. FIG. 7A shows the front and sides of a first exemplary plasma conditioning rod (770a, 775a). The first plasma control unit 770a may have a first length (y ₁₁ ). The first length (y ₁₁ ) may vary from about 1 mm to about 400 mm. The first EM adjustment unit 775a may have a length (y ₁₂ ). The length (y ₁₂ ) may vary from about 1 mm to about 400 mm. The first plasma adjustment unit 770a and the first EM adjustment unit 775a may have a first height (x ₁ ). The first height (x ₁ ) may vary from about 0.1 mm to about 10 mm. The first plasma adjustment unit 770a and the first EM adjustment unit 775a may have a first width (z ₁ ). The first width (z ₁ ) may vary from about 0.1 mm to about 10 mm. The first temperature control loop 772a may be disposed within the first exemplary plasma conditioning rod (770a, 775a). For example, temperature control fluid and / or gas may flow through the first temperature control loop 772a to control the temperature of the first exemplary plasma conditioning rod (770a, 775a). The first temperature control loop 772a may have a first diameter (d _z1 ). The first diameter (d _z1 ) may vary from about 0.001 mm to about 0.001 mm. In addition, the first temperature control loop 772a may have a first offset (l _x11 and l _x12 ). The first offsets (l _x11 and l _x12 ) can vary from about 0.01 mm to about 0.1 mm. For example, the first plasma conditioning rod (770a, 775a) includes dielectric material to accommodate various configurations and / or shapes for the first temperature control loop 772a, is circular, and is hollow or partially hollow. It may have a cross section.

FIG. 7B shows the front and side surfaces of a second exemplary plasma conditioning rod (770b, 775b). The second plasma control unit 770b may have a second length (y ₂₁ ). The second length (y ₂₁ ) may vary from about 1 mm to about 400 mm. The second EM adjustment unit 775b may have a length (y ₂₂ ). The length (y ₂₂ ) may vary from about 1 mm to about 400 mm. The second plasma adjustment unit 770b and the second EM adjustment unit 775b may have a second height (x ₂ ). The second height (x ₂ ) may vary from about 0.1 mm to about 10 mm. The second plasma adjustment unit 770b and the second EM adjustment unit 775b may have a second width (z ₂ ). The second width (z ₂ ) may vary from about 0.1 mm to about 10 mm. The second temperature control loop 772b may be disposed in the second exemplary plasma conditioning rod (770b, 775b). For example, temperature control fluid and / or gas may flow through the second temperature control loop 772b to control the temperature of the second exemplary plasma regulation rod (770b, 775b). The second temperature control loop 772b may have a second diameter (d _z2 ). The second diameter (d _z2 ) may vary from about 0.001 mm to about 0.001 mm. In addition, the second temperature control loop 772b may have a second offset (l _x21 and l _x22 ). The second offset (l _x21 and l _x22 ) may vary from about 0.01 mm to about 0.1 mm. For example, the second plasma conditioning rod (770b, 775b) includes a dielectric material to accommodate various configurations and / or shapes for the second temperature control loop 772b, is circular, and is hollow or partially hollow. It may have a cross section. FIG. 7C shows the front and side surfaces of a third exemplary plasma conditioning rod (770c, 775c). The third plasma control unit 770c may have a third length (y ₃₁ ). The third length (y ₃₁ ) may vary from about 1 mm to about 400 mm. The third EM adjustment unit 775c may have a length (y ₃₂ ). The length (y ₃₂ ) may vary from about 1 mm to about 400 mm. The third plasma adjustment unit 770c and the third EM adjustment unit 775c may have a third height (x ₃ ). The third height (x ₃ ) may vary from about 0.1 mm to about 10 mm. The third plasma adjustment unit 770c and the third EM adjustment unit 775c may have a third width (z ₃ ). The third width (z ₃ ) may vary from about 0.1 mm to about 10 mm. The third temperature control loop 772c may be disposed within the third exemplary plasma conditioning rod (770c, 775c). For example, temperature control fluid and / or gas may flow through the third temperature control loop 772c to control the temperature of the third exemplary plasma conditioning rod (770c, 775c). The third temperature control loop 772c may have a third diameter (d _z3 ). The third diameter (d _z3 ) may vary from about 0.001 mm to about 0.001 mm. In addition, the third temperature control loop 772c may have a third offset (l _x31 and l _x32 ). The third offset (l _x31 and l _x32 ) may vary from about 0.01 mm to about 0.1 mm. For example, the third plasma conditioning rod (770c, 775c) includes dielectric material to accommodate various configurations and / or shapes for the third temperature control loop 772c, is circular, and is hollow or partially hollow. It may have a cross section.

FIG. 7D shows the front and side of a fourth exemplary plasma conditioning rod (770d, 775d). The fourth plasma control unit 770d may have a fourth length (y ₄₁ ). The fourth length (y ₄₁ ) may vary from about 1 mm to about 400 mm. The fourth EM adjustment unit 775d may have a length (y ₄₂ ). The length (y ₄₂ ) may vary from about 1 mm to about 400 mm. The fourth plasma adjustment unit 770d and the fourth EM adjustment unit 775d may have a fourth height (x ₄ ). The fourth height (x ₄ ) may vary from about 0.1 mm to about 10 mm. The fourth plasma adjustment unit 770d and the fourth EM adjustment unit 775d may have a fourth width (z ₄ ). The fourth width (z ₄ ) may vary from about 0.1 mm to about 10 mm. The fourth temperature control loop 772d may be disposed within a fourth exemplary plasma conditioning rod (770d, 775d). For example, temperature control fluid and / or gas may flow through the fourth temperature control loop 772d to control the temperature of the fourth exemplary plasma conditioning rod (770d, 775d). The fourth temperature control loop 772d may have a fourth diameter (d _z4 ). The fourth diameter (d _z4 ) may vary from about 0.001 mm to about 0.001 mm. In addition, the fourth temperature control loop 772d may have a fourth offset (l _x41 and l _x42 ). The fourth offset (l _x41 and l _x42 ) may vary from about 0.01 mm to about 0.1 mm. For example, the fourth plasma conditioning rod (770d, 775d) includes a dielectric material to accommodate various configurations and / or shapes for the fourth temperature control loop 772d, is rectangular, and is hollow or partially hollow. It may have a cross section.

  FIG. 8 depicts a flowchart of an exemplary operational procedure according to an embodiment of the present invention. A multi-step procedure 800 is shown in FIG. Alternatively, a different multi-step procedure may be used.

  In 810, a substrate (105-405) may be provided on a substrate holder (120-420) in a process chamber (110-410). The substrate (105-405) can be moved arbitrarily. The resonator assembly (181-481) may be coupled to the process chamber (110-410). In some embodiments, the resonator assembly (181-481) with the EM energy conditioning space (185-485) therein is used by using the first interface assembly (165a-465a) to form a process chamber (110- 410). Alternatively, other configurations may be used.

  At 820, a plurality of plasma conditioning rods are transferred from the EM energy conditioning space (185-485) to the process space (115-415) in the process chamber (110-410) via the first interface assembly (165a-465a). It may be configured to enter. Isolation assemblies (164a, 164c-464a, 464b) may be removably coupled to the first interface assembly (165a-465a) and from the EM energy conditioning space (185-485) to the process chamber ( 110-410) may be configured to isolate process spaces (115-415). Isolation assemblies (164a, 164c-464a, 464b) may be used to removably couple the plasma conditioning rod to the first interface assembly (165a-465a). For example, the plasma adjustment portion of the plasma adjustment rod may be disposed in the process space (115-415), and the EM energy adjustment portion may be disposed in the EM energy adjustment space (185-485).

At 830, process gas may be supplied around the plasma control rod in the process chamber. During dry plasma etching, the process gas may include an etchant, a passivator, or an inert gas, or a mixture thereof. For example, when plasma etching a dielectric film, such as silicon oxide (SiO _x ) or silicon nitride (Si _x N _y ), the plasma etching gas composition is typically a fluorocarbon-based chemical (C _x F _y ). - for example _{C 4 F 8, C 5 F} 8, C 3 F 6, C 4 F 6, CF 4 or the like - include, and / or a fluorohydrocarbon-based chemicals _{(C x H y F z)} - for example CHF ₃ , CH ₂ F _2, etc. and may contain at least one of an inert gas, oxygen, CO, or CO ₂ . In addition, for example, when etching polycrystalline silicon (polysilicon), the plasma etching gas composition typically contains a halogen-containing gas, such as HBr, Cl ₂ , NF ₃ , or SF ₆ , or mixtures thereof. And may contain a fluorohydrocarbon chemical (C _x H _y F _z ) —for example, CHF ₃ , CH ₂ F _2, etc.—and inert gas, oxygen, CO, or CO ₂ or these 2 It may have at least one of two or more mixtures. During plasma deposition, the process gas may include a film forming precursor, a reducing gas, or an inert gas, or a mixture of two or more thereof.

  At 840, a uniform microwave plasma may be generated by applying a tunable microwave signal to the plasma conditioning rod.

  In some systems, multiple EM coupling regions {(162a-162c, FIG. 1), (262a-262c, FIG. 2), (362a-362c, FIG. 3), or (462a-462c, FIG. 4)} 1 or more sets of EM coupling distances {(176a-176c, FIG. 1), (276a−) from the lower resonator wall (183-483) inside the resonator assembly (181-481). 276c, FIG. 2), (376a-376c, FIG. 3), or (476a-476c, FIG. 4)}. The EM adjuster {(175a-175c, FIG. 1), (275a-275c, FIG. 2), (375a-375c, FIG. 3), or (475a-475c, FIG. 4)} is the first set of EM coupling regions {(162a-162c, FIG. 1), (262a-262c, FIG. 2), (362a-362c, FIG. 3), or (462a-462c, FIG. 4)}. The EM adjustment unit may obtain different adjustable microwave signals (energy) from a plurality of sets of a plurality of EM coupling regions. Each different adjustable microwave signal (energy) is generated by the EM adjuster {(175a-175c, FIG. 1), (275a-275c, FIG. 2), (375a-375c, FIG. 3), or (475a-475c, 4)} may be transferred to the process chamber (115-415) at various locations as controllable plasma conditioning energy. A set of multiple EM coupling regions {(162a-162c, FIG. 1), (262a-262c, FIG. 2), (362a-362c, FIG. 3), or (462a-462c, FIG. 4)} Possible electric field regions, adjustable magnetic field regions, maximum field regions, maximum voltage regions, maximum energy regions, or maximum current regions, or combinations thereof may be included.

  The plurality of plasma control slabs {(161a-161c, FIG. 1), (261a-261c, FIG. 2), (361a-361c, FIG. 3), or (461a-461c, FIG. 4)} A control aggregate {(160a-160c, FIG. 1), (260a-260c, FIG. 2), (360a-360c, FIG. 3), or (460a-460c, FIG. 4)}, and The EM adjustment distance {(177a-177c, FIG. 1), (277a-277c, FIG. 2), (377a- 377c, FIG. 3), or (477a-477c, FIG. 4)} plasma control slab pairs {(163a-163c, FIG. 1), (263a-263c, FIG. 2), (363a-36] c, Figure 3), or it may be used to move the (463a-463c, Figure 4)}. The set of control assemblies and the set of plasma conditioning slabs adjust / optimize each different adjustable microwave signal (energy) coupled from the set of EM coupling regions to the set of EM adjustments associated with the set of plasma control rods. It can be used to

  The one or more control devices (195-495) may include a plurality of control devices {(160a-160c, FIG. 1), (260a-260c, FIG. 2), (360a-360c, FIG. 3), or (460a- 460c, FIG. 4)} and may be coupled to one or more sets of plasma slabs {(161a-161c, FIG. 1), (261a-261c, FIG. 2), (361a-361c, FIG. ) Or (461a-461c, FIG. 4)} sets of motion {(163a-163c, FIG. 1), (263a-263c, FIG. 2), (363a-363c, FIG. 3), or (463a- 463c, FIG. 4)} may be used to control / optimize. For example, one or more controllers (195-495) may be configured to adjust, maintain, and / or maintain a uniform microwave plasma within the process space (115-415) during substrate processing. 177a-177c, FIG. 1), (277a-277c, FIG. 2), (377a-377c, FIG. 3), or (477a-477c, FIG. 4)} used to control / optimize good.

  In addition, from a plurality of cavity control assemblies {(155a-155c, FIG. 1), (255a-255c, FIG. 2), (355a-355c, FIG. 3), or (455a-455c, FIG. 4)} One or more sets of cavities are defined as cavity adjustment distances {(158a-158c, FIG. 1), (258a-258c, FIG. 2), (358a-358c, FIG. 3) within the EM energy adjustment space (184-485), Or (458a-458c, FIG. 4)} sets of cavity adjustment slabs {(156a-156c, FIG. 1), (256a-256c, FIG. 2), (356a-356c, FIG. 3), or (456a- 456c, FIG. 4)} is moved to {(157a-157c, FIG. 1), (257a-257c, FIG. 2), (357a-357c, FIG. 3), or (457a-457c, FIG. 4)}. Though May need is in. One or more controllers (195-495) may be coupled to one or more cavity control assemblies (155-455). The controller may use a process recipe that sets, controls, and optimizes the cavity adjustment distance to control and maintain plasma uniformity in the process space in real time.

  In addition, one or more controllers (195-495) are coupled to the microwave source (150-450), the matching network (152-452), the coupling network (154-454), and the resonator assembly (181-481). May be good. At least one controller sets and controls the microwave source (150-450), matching network (152-452), and coupling network (154-454) to control plasma uniformity within the process space; As well as process recipes to optimize.

  At 850, the substrate is processed in a uniform microwave plasma. If the substrate holder is movable—for example, rotatable or vertically or laterally movable—the substrate can be processed by moving the substrate everywhere in a uniform microwave plasma.

  FIG. 9 illustrates a plasma processing system 900 according to an embodiment of the present invention. The plasma processing system 900 may include a dry plasma etching system or a plasma deposition system.

  The plasma processing system 900 includes a rectangular process chamber 910 having a plurality of chamber walls 912 and a coupled network (954a and 954b) configured to define a process space 915. The plasma processing system 900 includes a substrate holder 920 that is configured to support and / or move the substrate 905 to (and throughout) the process space 915. The plasma processing system 900 includes a process gas system 940 and a process gas shower plate 941 configured to provide process gas to the process space 915. The substrate 905 may be exposed to plasma or process chemicals in the process space 915. The plasma processing system 900 includes a first set of resonator assemblies (981a, 981b, and 981c) that can be coupled to the first coupling network 954a, and a second set of resonator assemblies that can be coupled to the second coupling network 954b. With bodies (981d, 981e, and 981f). In some embodiments, the first coupling network 954a can be coupled to a first matching network 952a that can be coupled to the first microwave source 950a, and the second coupling network 954b can be coupled to the second microwave source 950b. It may be coupled to the second matching network 952b. The plasma processing system 900 may be configured to generate plasma within the process space 915. For example, the resonator assemblies (981a, 981b, 981c, 981d, 981e, and 981f) may be configured using the microwave resonator system (100, 200, 300, or 400) described herein.

10A and 10B respectively show a partially cut top view and a perspective view of a microwave resonator system 1000 according to another embodiment of the present invention. The process chamber 1010 is a cylindrical chamber having a cylindrical side wall 1012. The interface assembly 1065 is provided at the top of the chamber to which the resonator assembly 1081 is removably coupled. A plurality of control assemblies 1060 are visible extending from the top of the resonator assembly and each is coupled to a corresponding plasma conditioning slab 1061. Additional features associated with the plurality of assemblies 1060 and the plasma conditioning slab 1061 are described with reference to the resonator systems 100, 200, 300, and 400, for example, a plasma conditioning rod, an isolation assembly, an EM energy conditioning space 1085, an isolation protection. Same or similar to those described above, such as space, protection assembly, etc. In addition, a plurality of additional resonator subsets [sub-assemblies] 1081a may be coupled to the sidewalls, for example, four additional resonator subsets 1081a as shown. However, any number may be provided. Each resonator subset 1081a has a single plasma conditioning rod 1070a and 1075a with an isolation assembly 1064a, an EM coupling region 1062a, a plasma conditioning slab 1061a, and a control assembly 1060a as shown. Good. Alternatively, a plurality of adjustment rods and attachment members may be provided in the EM energy adjustment space 1085a of the single resonator subset 1081a. Each resonator subset 1081a and resonator assembly 1081 may also include cavity conditioning slabs 1056a and 1056 coupled to cavity control assemblies 1055a and 1055. Thus, the plurality of plasma conditioning rod assemblies are spaced vertically along the top of the chamber and vertically into the chamber toward one or more substrates 1005 located on the substrate holder 1020 at the bottom (adjacent) of the chamber 1010 Protrusively. Optionally, a plurality of further plasma conditioning rod assemblies may be configured to extend horizontally to enter the process space above the substrate (s) 1005 around the chamber. The substrate holder 1020 may be a movable substrate holder that moves the substrate (s) 1005 throughout the uniform plasma generated by a stationary substrate holder or a plurality of plasma conditioning rods. For example, the substrate holder 1020 may support a plurality of substrates 1005 and rotate and / or translate within the process chamber 1010. For example, FIG. 10A schematically illustrates three substrates 1005 on a substrate holder 1020 that can rotate the substrate in a uniform plasma like a turntable.

  In another embodiment of the invention, FIGS. 11A and 11B represent a microwave resonator system 1100 that also has a cylindrical process chamber 1110. Instead of a cylindrical resonator assembly, the resonator system 1100 has a rectangular (or square) resonator assembly 1181 on the top surface of the cylindrical chamber 1110. Again, a plurality of control assemblies 1160 and corresponding plasma conditioning slabs 1161 are coupled to the isolation assembly and within resonator assembly 1181 comprising a plasma conditioning rod that extends vertically to enter process chamber 1110. Separate with. In addition, a single annular resonator assembly 1181a is provided around the sidewall 1112 of the chamber 1110, rather than a plurality of additional resonator subsets. The plurality of control assemblies 1160a and the corresponding plasma conditioning slabs 1161a are spaced around the chamber wall 1112 in the further resonator subset 1181a. Corresponding plasma conditioning rods 1170a and 1175a extend radially through the isolation assembly 1164a into the process chamber 1110. Any desired number of plasma conditioning rods and associated EM coupling regions 1162a may be provided in a single annular resonator subset 1181a. The system 1000 includes a plurality of plasma conditioning rods extending vertically from the top to enter the process chamber, and a plurality of plasma conditioning rods extending radially into the chamber 1110 from the side where plasma uniformity is increased. Have. As shown, a single substrate 1105 may be provided on a substrate holder 1120 in the process chamber 1110. Alternatively, a plurality of substrates 1105 may be provided as illustrated in FIG. 10A. Again, the substrate holder 1120 may be either a stationary type or a movable type that is rotatable or vertically movable. Cavity control assemblies 1155 and 1155a and associated cavity conditioning slabs 1156 and 1156a may be provided in resonator assembly 1181 and resonator subassembly 1181a, respectively.

  In another alternative embodiment shown in the schematic diagram of FIG. 12, the resonator system 1200 includes a plurality of rectangular aggregates 1281 that are spoke-like around the top of the cylindrical process chamber 1210. Each resonator assembly 1281 is coupled to an isolation assembly and includes a plurality of control assemblies 1260 with plasma conditioning rods extending vertically through the associated EM coupling region and upper surface into the process chamber 1210. And a plasma conditioning slab 1261 associated therewith. Similarly, as shown in the top schematic view of FIG. 13, a plurality of resonator assemblies 1381 may be provided in parallel across the diameter but above the cylindrical chamber 1310. The resonator system 1300 similarly includes a plurality of control assemblies 1360 and corresponding plasma conditioning slabs 1361 that are spaced within each resonator assembly 1381. Each resonator assembly has a corresponding EM coupling region and a corresponding plasma conditioning rod coupled to the isolation assembly and extending vertically to enter the process chamber 1310. In each of the resonator systems 1200 and 1300, one or more substrates 1205 and 1305 may be provided on the substrate holders 1220 and 1320. The substrate holders 1220 and 1320 may be stationary or movable and / or movable vertically.

  Even if only specific embodiments of the present invention have been described above, those skilled in the art will be able to make many modifications within the scope of the exemplary embodiments without substantially departing from the novel teachings and advantages of the present invention. Immediately come up with the mold. Accordingly, all such modifications are understood to be within the scope of the present invention.

Accordingly, this description does not limit the invention. The setup, operation, and behavior of the present invention are described with the understanding that modifications and variations of the embodiments are possible given the level of detail present herein. Accordingly, the foregoing detailed description is not intended to limit the invention in any way. The scope of the invention is defined by the claims, rather than by this detailed description.
Several aspects are described.
[Aspect 1]
A microwave processing system for processing a substrate:
A process chamber including a process space for processing the substrate therein;
A first interface assembly is coupled to the process chamber to have an electromagnetic (EM) energy conditioning space in which a first set of EM coupling regions are set, and the first set of isolation assemblies A first resonator assembly having;
A first plasma control unit configured to control uniformity of plasma in the process space in combination with the first set of isolation assemblies; and a first plasma control unit disposed in the EM energy control space. A first set of plasma conditioning rods having a first EM tuning portion coupled to at least one of the set of EM coupling regions;
A resonator sensor coupled to the EM energy conditioning space and configured to obtain resonator data; and
In combination with the first set of isolation assemblies and the resonator sensor, controlling the first set of plasma conditioning rods by using the first set of isolation sets and the resonator data, A controller configured to control uniformity of the first set of EM coupling regions within the first EM energy conditioning space and plasma within the process space;
A microwave processing system.
[Aspect 2]
A coupling network coupled to the first resonator assembly;
A matching network coupled to the coupled network;
A microwave source coupled to the matching network;
The microwave processing system according to aspect 1, further comprising:
The microwave source is configured to operate at a frequency of 500 MHz to 5000 MHz;
The controller is coupled to the microwave source, the matching network, and the coupling network to control the microwave source, the matching network, and / or the coupling network, and thereby within the EM energy regulation space. Configured to control plasma uniformity within the first set of EM coupling regions and the process space of
Microwave processing system.
[Aspect 3]
A plurality of control assemblies coupled to the first resonator assembly; and
A plurality of plasma conditioning slabs coupled to the control assembly disposed adjacent to at least one EM coupling region in the EM energy conditioning space;
The microwave processing system according to aspect 1, further comprising:
The control device is coupled to the control assembly and is set between the plasma adjustment slab in the first EM energy adjustment space and the first EM adjustment part of the first set of plasma adjustment rods. Configured to control uniformity of the plasma within the first set of EM coupling regions and the process space within the EM energy conditioning space by controlling an accommodation distance;
Microwave processing system.
[Aspect 4]
A plurality of flow elements coupled to the process chamber and configured to provide a process gas to the process space;
A plurality of supply elements coupled to the flow element; and
A gas supply system coupled to the supply element;
The microwave processing system according to aspect 1, further comprising:
The controller is coupled to the gas supply system and controls the gas supply system so that the first set of EM coupling regions in the EM energy regulation space and the plasma in the process space are uniform. Configured to control gender,
Microwave processing system.
[Aspect 5]
A cavity conditioning slab disposed in the first EM energy conditioning space within the first resonator assembly;
A first cavity control assembly coupled to the cavity conditioning slab;
The microwave processing system according to aspect 1, further comprising:
The cavity adjustment slab is provided at a cavity adjustment distance from a wall of the first cavity control assembly;
The controller is coupled to the first cavity control assembly and controls the cavity adjustment distance to control the first set of EM coupling regions in the EM energy adjustment space and the process space. Configured to control the uniformity of the plasma,
Microwave processing system.
[Aspect 6]
A lower electrode disposed in the substrate holder; and
A radio frequency (RF) generator coupled to the lower electrode;
The microwave processing system according to aspect 1, further comprising:
The controller is coupled to the RF generator and controls the RF generator so that the first set of EM coupling regions in the EM energy conditioning space and the plasma in the process space are uniform. Configured to control gender,
Microwave processing system.
[Aspect 7]
The microwave processing system of aspect 1, wherein the first resonator assembly is coupled to the process chamber by using one or more baffle members.
[Aspect 8]
A microwave processing system for processing a substrate:
A process chamber including a process space for processing the substrate therein;
One or more resonator assemblies each having a first electromagnetic (EM) energy conditioning space therein and coupled to an upper chamber wall of the process chamber;
A first set of EM coupling regions set in the first EM energy conditioning space, and a first set configured to couple to the upper chamber wall and isolate the first EM energy conditioning space from the process space. Isolated assembly of;
A first set of protection assemblies coupled to the first set of isolation assemblies and extending to enter the process space and having an isolation protection space therein;
A first set of plasma control rods coupled to the first set of isolation assemblies, the first set of plasma control rods being disposed in the isolation protection space, for plasma in the process space; A first plasma tuning unit configured to control uniformity and a first EM tuning unit disposed in the first EM energy tuning space and coupled to at least one of the first set of EM coupling regions; A first set of plasma conditioning rods;
A resonator sensor coupled to the EM energy conditioning space and configured to obtain resonator data;
In combination with the first set of isolation assemblies and the resonator sensor, controlling the first set of plasma conditioning rods by using the first set of isolation sets and the resonator data, A controller configured to control uniformity of the first set of EM coupling regions within the first EM energy conditioning space and plasma within the process space;
A microwave processing system.
[Aspect 9]
One or more coupling networks coupled to the one or more resonator assemblies;
A matching network coupled to each of the one or more coupled networks;
A microwave source coupled to the matching network;
The microwave processing system according to aspect 8, further comprising:
The microwave source is configured to operate in a frequency range of 500 MHz to 5000 MHz;
The controller is coupled to the microwave source, the matching network, and the one or more coupling networks, and controls the microwave source, the matching network, and / or the one or more coupling networks, Configured to control plasma uniformity in the first set of EM coupling regions in the first EM energy conditioning space and in the process space;
Microwave processing system.
[Aspect 10]
A first set of control assemblies coupled to the one or more resonator assemblies; and
A first set of plasma conditioning slabs coupled to the first set of control assemblies disposed adjacent to the first set of EM coupling regions in the EM energy conditioning space;
The microwave processing system according to aspect 8, further comprising:
The controller is coupled to the first set of control assemblies, and the first set of plasma adjustment slabs and the first set of plasma adjustment rods of the first set of plasma adjustment rods in the first EM energy adjustment space. Is configured to control the uniformity of the plasma in the first set of EM coupling regions in the EM energy conditioning space and in the process space. ,
Microwave processing system.
[Aspect 11]
A plurality of supply elements coupled to the process chamber and configured to provide process gas to the process space;
A gas supply system coupled to the supply element;
The microwave processing system according to aspect 8, further comprising:
The controller is coupled to the gas supply system and controls the gas supply system so that the first set of EM coupling regions in the EM energy regulation space and the plasma in the process space are uniform. Configured to control gender,
Microwave processing system.
[Aspect 12]
A cavity conditioning slab disposed within the first EM energy conditioning space within the one or more resonator assemblies;
A first cavity control assembly coupled to the cavity conditioning slab;
The microwave processing system according to aspect 8, further comprising:
The cavity adjusting slab is provided at a cavity adjusting distance from a wall of the one or more resonator assemblies;
The controller is coupled to the first cavity control assembly and controls the first cavity control assembly to control the first set of EM coupling regions and the process space in the EM energy regulation space. Configured to control the uniformity of the plasma within the
Microwave processing system.
[Aspect 13]
One or more resonator subsets, each coupled to a sidewall of the process chamber, each having a second EM energy conditioning space therein;
A second set of isolation assemblies coupled to the sidewalls and configured to isolate the second EM energy conditioning space from the process space;
A second set of protection assemblies coupled to the second set of isolation assemblies and extending into the process space and having a second isolation protection space therein; and
A second plasma control unit disposed in the second isolation protection space, coupled to the second set of isolation assemblies, and a second EM coupling region disposed in the second EM energy control space. A second set of plasma control rods having a 2EM control section;
The microwave processing system according to aspect 8, further comprising:
[Aspect 14]
The microwave processing system of aspect 13, further comprising one or more EM sources coupled to the one or more resonator subsets,
The EM source is configured to operate at a frequency of about 500 MHz to about 5000 MHz;
The controller is coupled to the one or more EM sources and controls the one or more EM sources to control the second set of EM coupling regions and the process in the second EM energy conditioning space. Configured to control the uniformity of the plasma in space,
Microwave processing system.
[Aspect 15]
A second set of control assemblies coupled to the one or more resonator subsets; and
A second set of plasma conditioning slabs coupled to the second set of control assemblies disposed adjacent to the second set of EM coupling regions in the second EM energy conditioning space;
The microwave processing system according to aspect 13, further comprising:
The control device is coupled to the second set of control assemblies, and the second set of plasma adjusting slabs and the second set of plasma adjusting rods of the second set of plasma adjusting rods in the second EM energy adjusting space. Is configured to control plasma uniformity in the second set of EM coupling regions in the second EM energy adjustment space and in the process space. The
Microwave processing system.
[Aspect 16]
The process chamber is cylindrical with cylindrical side chamber walls, and
The second set of plasma conditioning rods extends radially to enter the process space in the second isolation protective space;
The microwave processing system according to aspect 13.
[Aspect 17]
17. The microwave processing system of aspect 16, further comprising a rotatable or vertically movable substrate holder adjacent to the bottom chamber wall for placing one or more substrates on a surface in the process space. .
[Aspect 18]
9. The microwave processing system of aspect 8, further comprising a rotatable or vertically movable substrate holder adjacent to the bottom chamber wall for placing one or more substrates on a surface in the process space. .
[Aspect 19]
A method of processing a substrate by using a microwave processing system comprising:
Providing the substrate in a process space within a process chamber;
Coupling a resonator assembly to the process chamber by using an interface assembly, the resonator assembly having an electromagnetic (EM) energy conditioning space therein, the interface assembly having a plurality of isolations Including a set of aggregates, wherein an EM coupling region is set in the EM energy regulation space;
Combining a plurality of sets of plasma control rods to a set of a plurality of isolated assemblies, wherein the plurality of sets of plasma control rods includes a plasma control unit disposed in the process space; and Having an EM adjustment unit disposed in the EM energy adjustment space and coupled to at least one of a set of EM coupling regions;
Providing a process gas to the process space using a plurality of supply elements coupled to the process chamber, wherein a gas supply system is coupled to the plurality of supply elements;
Generating a uniform microwave plasma in the process space by applying adjustable microwave energy to the set of plasma control rods; and
Treating the substrate by exposing the substrate to the uniform microwave plasma;
Having a method.
[Aspect 20]
Coupling a plurality of control assemblies to the resonator assembly;
Coupling a plurality of plasma conditioning slabs to the control assembly disposed adjacent to at least one EM coupling region in the EM energy conditioning space; and
Coupling a control device to the control assembly,
The control device controls the EM energy by controlling an EM adjustment distance set between the plasma adjustment slab in the EM energy adjustment space and the EM adjustment unit including the plurality of plasma adjustment rods. Configured to control a set of the plurality of EM coupling regions in a conditioning space and a plasma uniformity in the process space;
The method according to embodiment 19, further comprising:

Claims (20)

A microwave processing system for processing a substrate:
A process chamber including a process space for processing the substrate therein;
A resonator assembly removably coupled to the process chamber using an interface assembly to define an electromagnetic (EM) energy conditioning space within which a set of EM coupling regions are set;
A set of plasma conditioning rods, the set of plasma conditioning rods permitting the process space within the process chamber to be coupled while allowing the set of plasma conditioning rods to be coupled to the interface assembly. Coupled to a set of isolation assemblies coupled to the interface assembly that is isolated from the EM energy conditioning space, the set of plasma conditioning rods controlling the uniformity of the plasma in the process space A plasma adjusting unit that is configured; and an EM adjusting unit that is disposed in the EM energy adjusting space and is coupled to at least one of the set of EM coupling regions, and the EM adjusting unit is interposed therebetween. The energy obtained from the microwaves in the coupling region is transferred to the process space through the plasma control unit, and a set of processes. Zuma adjustable rod;
A resonator sensor coupled to the EM energy conditioning space and configured to obtain resonator data from the EM energy conditioning space; and
The EM energy adjustment by controlling the set of plasma conditioning rods by using the set of isolation sets and the resonator data in combination with the set of isolation sets and the resonator sensor. A controller configured to control the set of EM coupling regions in space and the uniformity of plasma in the process space;
A microwave processing system. Microwave source;
A matching network coupled to the microwave source; and a coupling network coupled to provide microwave energy from the matching network to the resonator assembly;
The microwave processing system according to claim 1, further comprising:
The microwave source is configured to operate at a frequency of 500 MHz to 5000 MHz;
The controller is coupled to the microwave source, the matching network, and the coupling network to control the microwave source, the matching network, and / or the coupling network, and thereby within the EM energy regulation space. Configured to control plasma uniformity within the set of EM coupling regions and the process space of
Microwave processing system. A plurality of plasma control slabs, each plasma control slab being positioned at a variable distance from the EM control portion of the corresponding plasma control rod;
A plurality of slab control assemblies, each slab control assembly further comprising a plurality of slab control assemblies configured to vary the variable distance to adjust energy in a corresponding EM coupling region. The microwave processing system according to claim 1,
The plurality of plasma conditioning slabs are disposed proximate to corresponding EM coupling regions in the EM energy conditioning space;
The control device controls the distance between the plasma adjustment slab in the EM energy adjustment space and the EM adjustment unit of the set of plasma adjustment rods, thereby the set in the EM energy adjustment space. Configured to control plasma uniformity within the EM coupling region and the process space of
Microwave processing system. A gas supply means coupled to the process chamber and configured to provide process gas to the process space;
The microwave processing system according to claim 1, further comprising:
The controller is configured to control the gas supply means to control the set of EM coupling regions in the EM energy conditioning space and the uniformity of plasma in the process space.
Microwave processing system. A cavity adjustment slab positioned at a variable cavity adjustment distance in the EM energy adjustment space from a wall in the resonator assembly;
A cavity control assembly coupled to the cavity conditioning slab;
The microwave processing system according to claim 1, further comprising:
The controller is configured to control energy in the EM energy adjustment space by controlling the cavity adjustment distance via the cavity control assembly.
Microwave processing system. A lower electrode disposed in the substrate holder; and
A radio frequency (RF) generator coupled to the lower electrode;
The microwave processing system according to claim 1, further comprising:
The controller is coupled to the RF generator and controls the RF generator so that the set of EM coupling regions within the EM energy conditioning space and the plasma uniformity within the process space. Configured to control,
Microwave processing system.   The microwave processing system of claim 1, further comprising one or more baffle members that allow the resonator assembly to be movably coupled to the process chamber. A microwave processing system for processing a substrate:
A process chamber including a process space for processing the substrate therein;
1 for microwaves, each defining an electromagnetic (EM) energy conditioning space therein, a set of EM coupling regions are set in the EM energy conditioning space, and coupled to the upper chamber wall of the process chamber Two or more resonator assemblies;
A set of plasma conditioning rods coupled to the upper chamber wall and coupled to a set of isolation assemblies configured to isolate the EM energy conditioning space from the process space;
A set of protection assemblies that are coupled to the set of isolation assemblies and extend into the process space and have a protection space isolated from the plasma in the process space. A set of plasma conditioning rods are disposed in the isolated protective space and configured to control plasma uniformity in the process space; and in the EM energy conditioning space An EM adjustment unit disposed and coupled to at least one of the set of EM coupling regions, and energy obtained from the microwaves in the EM coupling region via the EM adjustment unit is A set of plasma control rods transferred to the process space via a control unit;
A resonator sensor coupled to the EM energy conditioning space and configured to obtain resonator data from the EM energy conditioning space;
The EM energy adjustment by controlling the set of plasma conditioning rods by using the set of isolation sets and the resonator data in combination with the set of isolation sets and the resonator sensor. A controller configured to control the set of EM coupling regions in space and the uniformity of plasma in the process space;
A microwave processing system. Microwave source;
One or more matching networks coupled to the microwave source; and a coupling network coupled to each matching network to provide microwave energy from the matching network to the resonator assembly;
The microwave processing system according to claim 8, further comprising:
The microwave source is configured to operate in a frequency range of 500 MHz to 5000 MHz;
The control device is coupled to the microwave source, the matching network, and the coupling network, and controls the microwave source, the matching network, and / or the coupling network, so Configured to control a set of EM coupling regions and plasma uniformity within the process space;
Microwave processing system. A set of plasma control slabs, each plasma control slab being positioned at a variable distance from the EM control portion of the corresponding plasma control rod;
A set of slab control assemblies, each slab control assembly further comprising a slab control assembly configured to vary the variable distance to adjust energy in a corresponding EM coupling region. The microwave processing system according to Item 8, wherein
The set of plasma conditioning slabs are disposed proximate to the set of EM coupling regions in the EM energy conditioning space, the controller is coupled to the set of control assemblies, and the EM Controlling the distance between the set of plasma control slabs in the energy control space and the EM control part of the set of plasma control rods, the set of EM coupling regions in the EM energy control space. And configured to control plasma uniformity within the process space;
Microwave processing system. A gas supply means coupled to the process chamber and configured to provide a process gas to the process space;
The microwave processing system according to claim 8, further comprising:
The controller is configured to control the gas supply means to control the set of EM coupling regions in the EM energy conditioning space and the uniformity of plasma in the process space.
Microwave processing system. A cavity adjustment slab disposed at a variable cavity adjustment distance in the EM energy adjustment space from a wall of the one or more resonator assemblies;
A cavity control assembly coupled to the cavity conditioning slab;
The microwave processing system according to claim 8, further comprising:
The controller is configured to control energy in the EM energy adjustment space by controlling the cavity adjustment distance via the cavity control assembly.
Microwave processing system. One or more microwave resonator sub-assemblies, each coupled to a sidewall of the process chamber, each defining a second EM energy conditioning space therein;
A second set of plasma conditioning rods coupled to the side wall and coupled to a second set of isolation assemblies configured to isolate the second EM energy conditioning space from the process space;
A second set of protective assemblies coupled to the second set of isolated assemblies and extending into the process space and having a second protective space therein isolated from the plasma in the process space; In addition,
The second set of plasma control rods includes a second plasma control unit disposed in the second protection space, and a second EM control unit disposed in a second EM coupling region in the second EM energy control space. Have
The energy obtained from the microwave in the second EM coupling region via the EM adjustment unit is transferred to the process space via the plasma adjustment unit,
The microwave processing system according to claim 8. The microwave processing system of claim 13, further comprising one or more EM sources coupled to the one or more resonator sub-assemblies,
The EM source is configured to operate at a frequency of about 500 MHz to about 5000 MHz;
The controller is coupled to the one or more EM sources and controls the one or more EM sources to control the second set of EM coupling regions and the process in the second EM energy conditioning space. Configured to control the uniformity of the plasma in space,
Microwave processing system. A second set of plasma conditioning slabs, each plasma conditioning slab being positioned at a variable distance from the EM tuning portion of the corresponding plasma conditioning rod;
A second set of slab control assemblies, each slab control assembly configured to vary the variable distance to adjust energy in a corresponding EM coupling region. When,
The microwave processing system according to claim 13, further comprising:
The second set of plasma conditioning slabs is disposed proximate to the second set of EM coupling regions in the second EM energy conditioning space, and the controller is coupled to the second set of control assemblies; And, the second EM energy adjustment space is controlled by controlling a distance between the second set of plasma adjustment slabs in the second EM energy adjustment space and the second EM adjustment part of the second set of plasma adjustment rods. Configured to control plasma uniformity within the second set of EM coupling regions and within the process space,
Microwave processing system. The process chamber is cylindrical with cylindrical side chamber walls, and
The second set of plasma conditioning rods extends radially to enter the process space in the second protective space;
The microwave processing system according to claim 13.   The microwave processing of claim 16, further comprising a rotatable or vertically movable substrate holder adjacent to the bottom chamber wall for placing one or more substrates on a surface in the process space. system.   The microwave processing of claim 8, further comprising a rotatable or vertically movable substrate holder adjacent to the bottom chamber wall for placing one or more substrates on a surface in the process space. system. A method of processing a substrate by using a microwave processing system comprising:
Providing the substrate in a process space within a process chamber;
Coupling a microwave resonator assembly to the process chamber by using an interface assembly, the resonator assembly defining an electromagnetic (EM) energy conditioning space therein, wherein an EM coupling region is Set in the EM energy regulation space;
Combining a plurality of sets of plasma control rods into a set of a plurality of isolation assemblies, the isolation assembly allowing the set of plasma control rods to be coupled to the interface assembly. A plurality of plasma conditioning rods coupled to the interface assembly that isolates the process space in the process chamber from the EM energy conditioning space, the plasma conditioning rod set disposed in the process space; and An EM adjustment unit disposed in the EM energy adjustment space and coupled to at least one of a set of a plurality of EM coupling regions, and obtained from the microwaves in the EM coupling region via the EM adjustment unit. Allowing the transferred energy to be transferred to the process space via the plasma regulator;
Providing a process gas from a gas supply system to the process space;
Generating a uniform microwave plasma in the process space by applying adjustable microwave energy to the set of plasma control rods; and
Treating the substrate by exposing the substrate to the uniform microwave plasma;
Having a method. Coupling a plurality of control assemblies to the resonator assembly;
Coupling a plurality of plasma conditioning slabs to the control assembly adjacent to at least one EM coupling region in the EM energy conditioning space, wherein the EM tuning unit of the corresponding plasma conditioning rod of the corresponding plasma conditioning slab A control assembly can be used to change the distance from the process; and
Coupling a control device to the control assembly, the control device comprising, via the control assembly, a set of the plasma regulation slab and the plurality of plasma regulation rods in the EM energy regulation space. By controlling the distance between the EM adjustment unit, the set of the plurality of EM coupling regions in the EM energy adjustment space and the uniformity of the plasma in the process space are configured. Process,
20. The method of claim 19, further comprising:

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