JP6199581B2 - 金属酸化物膜、及び半導体装置 - Google Patents

金属酸化物膜、及び半導体装置 Download PDF

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Publication number
JP6199581B2
JP6199581B2 JP2013046299A JP2013046299A JP6199581B2 JP 6199581 B2 JP6199581 B2 JP 6199581B2 JP 2013046299 A JP2013046299 A JP 2013046299A JP 2013046299 A JP2013046299 A JP 2013046299A JP 6199581 B2 JP6199581 B2 JP 6199581B2
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Japan
Prior art keywords
film
layer
oxide semiconductor
transistor
oxide
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Expired - Fee Related
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JP2013046299A
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Japanese (ja)
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JP2014175446A5 (enExample
JP2014175446A (ja
Inventor
高橋　正弘
正弘 高橋
拓也 廣橋
拓也 廣橋
将志 津吹
将志 津吹
将志 太田
将志 太田
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2013046299A priority Critical patent/JP6199581B2/ja
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Publication of JP2014175446A5 publication Critical patent/JP2014175446A5/ja
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Publication of JP6199581B2 publication Critical patent/JP6199581B2/ja
Expired - Fee Related legal-status Critical Current
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  • Physical Vapour Deposition (AREA)
  • Thin Film Transistor (AREA)
JP2013046299A 2013-03-08 2013-03-08 金属酸化物膜、及び半導体装置 Expired - Fee Related JP6199581B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013046299A JP6199581B2 (ja) 2013-03-08 2013-03-08 金属酸化物膜、及び半導体装置

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JP2013046299A JP6199581B2 (ja) 2013-03-08 2013-03-08 金属酸化物膜、及び半導体装置

Related Child Applications (1)

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JP2017160954A Division JP6392955B2 (ja) 2017-08-24 2017-08-24 金属酸化物膜

Publications (3)

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JP2014175446A JP2014175446A (ja) 2014-09-22
JP2014175446A5 JP2014175446A5 (enExample) 2016-03-31
JP6199581B2 true JP6199581B2 (ja) 2017-09-20

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JP2013046299A Expired - Fee Related JP6199581B2 (ja) 2013-03-08 2013-03-08 金属酸化物膜、及び半導体装置

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JP (1) JP6199581B2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017037564A1 (en) * 2015-08-28 2017-03-09 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor, transistor, and semiconductor device
JP6668455B2 (ja) * 2016-04-01 2020-03-18 株式会社半導体エネルギー研究所 酸化物半導体膜の作製方法
US10388738B2 (en) * 2016-04-01 2019-08-20 Semiconductor Energy Laboratory Co., Ltd. Composite oxide semiconductor and method for manufacturing the same
KR102851714B1 (ko) * 2016-05-19 2025-08-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 복합 산화물 반도체 및 트랜지스터
US10043659B2 (en) * 2016-05-20 2018-08-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device or display device including the same
JP6800092B2 (ja) * 2016-06-24 2020-12-16 株式会社半導体エネルギー研究所 トランジスタ及び表示装置
US20170373195A1 (en) * 2016-06-27 2017-12-28 Semiconductor Energy Laboratory Co., Ltd. Transistor and semiconductor device
US20170373194A1 (en) * 2016-06-27 2017-12-28 Semiconductor Energy Laboratory Co., Ltd. Transistor
TW202224189A (zh) * 2016-10-21 2022-06-16 日商半導體能源研究所股份有限公司 複合氧化物及電晶體

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101980505B1 (ko) * 2009-10-08 2019-05-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체층, 반도체 장치 및 그 제조 방법
KR102505248B1 (ko) * 2010-12-03 2023-03-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막 및 반도체 장치

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JP2014175446A (ja) 2014-09-22

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