JP6188145B2 - 基板処理装置、半導体装置の製造方法及びプログラム - Google Patents

基板処理装置、半導体装置の製造方法及びプログラム Download PDF

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Publication number
JP6188145B2
JP6188145B2 JP2013201659A JP2013201659A JP6188145B2 JP 6188145 B2 JP6188145 B2 JP 6188145B2 JP 2013201659 A JP2013201659 A JP 2013201659A JP 2013201659 A JP2013201659 A JP 2013201659A JP 6188145 B2 JP6188145 B2 JP 6188145B2
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substrate
temperature
power
electromagnetic wave
maximum power
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JP2015070045A (ja
JP2015070045A5 (enExample
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徳信 赤尾
徳信 赤尾
信二 八島
信二 八島
祐樹 平
祐樹 平
純史 梅川
純史 梅川
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Kokusai Denki Electric Inc
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Hitachi Kokusai Electric Inc
Kokusai Denki Electric Inc
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JP2013201659A 2013-09-27 2013-09-27 基板処理装置、半導体装置の製造方法及びプログラム Active JP6188145B2 (ja)

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JP2013201659A JP6188145B2 (ja) 2013-09-27 2013-09-27 基板処理装置、半導体装置の製造方法及びプログラム

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JP2015070045A JP2015070045A (ja) 2015-04-13
JP2015070045A5 JP2015070045A5 (enExample) 2016-10-20
JP6188145B2 true JP6188145B2 (ja) 2017-08-30

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Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6748720B2 (ja) * 2016-08-31 2020-09-02 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法およびプログラム
WO2018055730A1 (ja) 2016-09-23 2018-03-29 株式会社日立国際電気 基板処理装置、半導体装置の製造方法および記録媒体
KR102259316B1 (ko) 2017-03-09 2021-06-01 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 반도체 장치의 제조 방법 및 프로그램
KR102311459B1 (ko) 2017-03-14 2021-10-13 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 반도체 장치의 제조 방법, 및 프로그램
WO2018173197A1 (ja) 2017-03-23 2018-09-27 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 発熱体、基板処理装置および半導体装置の製造方法
KR102294007B1 (ko) 2017-03-28 2021-08-25 가부시키가이샤 코쿠사이 엘렉트릭 반도체 장치의 제조 방법, 기판 처리 장치 및 기록 매체
WO2019043919A1 (ja) * 2017-09-01 2019-03-07 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法およびプログラム
JP6838010B2 (ja) 2018-03-22 2021-03-03 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法およびプログラム
TWI793744B (zh) * 2020-09-09 2023-02-21 日商國際電氣股份有限公司 基板處理裝置、半導體裝置之製造方法及程式
JP7361005B2 (ja) 2020-09-18 2023-10-13 株式会社Kokusai Electric 基板処理装置、基板保持具、半導体装置の製造方法、及び、プログラム
JP2022182381A (ja) 2021-05-28 2022-12-08 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法、基板処理方法およびプログラム
JP2024167450A (ja) 2021-09-24 2024-12-04 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法およびプログラム
JP7571073B2 (ja) 2022-03-24 2024-10-22 株式会社Kokusai Electric 半導体装置の製造方法、基板処理方法、プログラム、及び基板処理装置
TWI878802B (zh) 2022-03-24 2025-04-01 日商國際電氣股份有限公司 基板處理裝置，半導體裝置的製造方法及程式
JP7719759B2 (ja) 2022-09-21 2025-08-06 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法、基板処理方法およびプログラム
JP2024099858A (ja) 2023-01-13 2024-07-26 株式会社Kokusai Electric 基板処理装置、基板処理方法、半導体装置の製造方法およびプログラム
JP2025005515A (ja) 2023-06-28 2025-01-17 株式会社Kokusai Electric 基板処理装置、基板処理方法、半導体装置の製造方法およびプログラム

Family Cites Families (7)

* Cited by examiner, † Cited by third party
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JPS594059A (ja) * 1982-06-30 1984-01-10 Fujitsu Ltd 半導体装置の製造方法
JPH0669027B2 (ja) * 1983-02-21 1994-08-31 株式会社日立製作所 半導体ウエハの薄膜形成方法
JPS6154184A (ja) * 1984-08-22 1986-03-18 株式会社チノー 加熱処理装置
JPS61251126A (ja) * 1985-04-30 1986-11-08 Toshiba Mach Co Ltd 気相成長方法
JPH01236628A (ja) * 1988-03-17 1989-09-21 Tel Sagami Ltd プラズマ処理装置
JP2009295905A (ja) * 2008-06-09 2009-12-17 Hitachi Kokusai Electric Inc 基板処理装置
JP2012109429A (ja) * 2010-11-18 2012-06-07 Hitachi Kokusai Electric Inc 半導体装置の製造方法、及び基板処理装置

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