JP6151828B2 - Semiconductor chip - Google Patents

Description

  The present invention relates to a semiconductor chip intended to suppress an increase in resistance of a wiring connecting a solar battery and a secondary battery, and particularly relates to a semiconductor chip characterized by the layout of external connection terminals provided on the semiconductor chip.

  Patent Document 1 discloses a solar battery, a secondary battery, and a wiring for electrically connecting the solar battery and the secondary battery as a charge control system having a function of controlling charging from the solar battery to the secondary battery. And what was provided with the backflow prevention part which is provided on this wiring and prevents the backflow of the electric current from a secondary battery to a solar cell is disclosed.

JP-A-8-251818

  Here, when the charge control system recalled particularly from FIG. 1 of Patent Document 1 is examined, it is considered that the configuration shown in FIG. 4 is obtained. The charge control system shown in FIG. 4 includes a solar cell 1, a secondary battery 2, and a semiconductor chip 3, and the semiconductor chip 3 is a first terminal electrically connected to the solar cell 1. 4, a second terminal 5 that is electrically connected to the secondary battery 2, a wiring 6 that electrically connects the first terminal 4 and the second terminal 5, and a wiring 6. And a backflow prevention unit 7 that prevents backflow of current from the secondary battery 2 to the solar battery 1.

  However, as shown in FIG. 4, in recent years, in addition to the backflow prevention unit 7, a circuit having various functions and the like are mixedly mounted on the semiconductor chip 3 used in the charge control system. The case has become commonplace.

  Therefore, like the semiconductor chip 3 used in the conventional charge control system shown in FIG. 4, the wiring 6 that electrically connects the solar cell 1 and the secondary battery 2 extends from one side of the semiconductor chip 3 to the one side. If the configuration extends to the opposite side, the wiring 6 becomes redundant depending on the size of the internal circuit 8 and the wiring resistance increases accordingly, so that the solar cell 1 to the secondary battery 2 are increased. There is a risk of electrical loss when charging.

  Therefore, in the present invention, the length of the wiring that electrically connects the solar battery and the secondary battery is not easily affected by other internal circuits, and the electrical loss when charging from the solar battery to the secondary battery is performed. A semiconductor chip capable of reducing the above is provided.

  A semiconductor chip according to the present invention is a semiconductor chip which is formed into a rectangle with four sides, and is formed along one side of the four sides and is electrically connected to a solar cell; A second terminal formed along the one side and electrically connected to the secondary battery, a wiring electrically connecting the first terminal and the second terminal, and an electrical connection to the wiring Connected to the first terminal and the second terminal, and disposed outside a region surrounded by the wiring and discharging power supplied from the solar cell And a third terminal that is formed outside the region and along the one side and electrically connects the discharge part and a ground potential. , The length of the line segment connecting the first terminal and the third terminal is Characterized in that it is formed a terminal and the third terminal to the shorter position than the length of a line connecting.

  In addition, a semiconductor chip according to the present invention is a semiconductor chip which is formed into a rectangle with four sides, and is formed along one side of the four sides and electrically connected to the solar cell. A terminal, a second terminal formed along the other side adjacent to the one side and electrically connected to the secondary battery, and the first terminal and the second terminal are electrically connected. The wiring is electrically connected to the wiring and is disposed in a region surrounded by the one side, the other side, and a line segment connecting the first terminal and the second terminal, And a discharge unit that discharges electric power supplied from the solar cell.

  According to the semiconductor chip of the present invention, both the first terminal electrically connected to the solar cell and the second terminal electrically connected to the secondary battery are formed in a rectangular shape. The first terminal is formed along one side of the four sides of the semiconductor chip, or the first terminal is formed on one side and the second terminal is formed on the other side adjacent to the one side. The wiring for electrically connecting the two terminals does not extend from one side of the semiconductor chip to the other side facing the one side. For this reason, the length of the wiring that electrically connects the solar battery and the secondary battery is not easily affected by other internal circuits, and reduces electrical loss when charging the solar battery to the secondary battery. be able to.

1 is a diagram showing a configuration of a semiconductor chip 10 according to a first embodiment of the present invention. FIG. 3 is a detailed circuit diagram of a discharge unit 70 formed in the semiconductor chip 10 according to the first embodiment of the present invention. It is a figure which shows the structure of the semiconductor chip 10 concerning the 2nd Embodiment of this invention. It is a figure for demonstrating the subject in the charge control system recalled from FIG. 1 disclosed by patent document 1. FIG.

A semiconductor chip according to the present invention will be described in detail below with reference to the drawings.
(First embodiment)

  FIG. 1 shows a charge control system including a semiconductor chip 10 according to the first embodiment of the present invention, and is composed of a semiconductor chip 10, a solar cell 11, and a secondary battery 12.

  The semiconductor chip 10 is formed in a rectangular shape by being bordered by the sides 20a, 20b, 20c, and 20d as four sides. The semiconductor chip 10 is formed along the side 20a as one of the four sides and is electrically connected to the solar battery 11, and the semiconductor chip 10 is formed along the side 20a to form the secondary battery 12. It has the 2nd terminal 40 electrically connected, and the wiring 50 which electrically connects the 1st terminal 30 and the 2nd terminal 40. Charging from the solar cell 11 to the secondary battery 12 is performed via the first terminal 30, the wiring 50, and the second terminal 40.

  The first terminal 30 is formed at the closest position along the side 20a among the sides 20a to 20d. The first terminal 30 is connected to the solar cell 11 and serves as a window where the semiconductor chip 10 receives power supplied from the solar cell 11.

  The second terminal 40 is formed at the closest position along the side 20a among the sides 20a to 20d. The second terminal 40 is connected to the secondary battery 12 and serves as a window for transferring power supplied from the solar battery 11 and output from the semiconductor chip 10 to the secondary battery 12. Note that the second terminal 40 is formed adjacent to the first terminal 30.

  The wiring 50 is a wiring that electrically connects the first terminal 30 and the second terminal 40. The wiring 50 plays a role of transmitting the power of the solar cell 11 input from the first terminal 30 to the second terminal 40 when charging from the solar cell 11 to the secondary battery 12.

  The backflow prevention unit 60 is provided on the wiring 50. The backflow prevention unit 60 serves to prevent the voltage of the secondary battery 12 from flowing back toward the solar cell 11 as a result of the voltage of the solar cell 11 being lowered, and is configured by, for example, a switch element. When the backflow prevention unit 60 is configured by a switch element, when charging from the solar cell 11 to the secondary battery 12, the switch element is turned on, and the voltage of the solar cell 11 is the voltage of the secondary battery 12. If lower, the switch element may be turned off to prevent back flow from the secondary battery 12 to the solar battery 11. In addition, the backflow prevention unit 60 may be simply a diode instead of a switch element, or may be a combination of both, and is not limited thereto.

  The discharge unit 70 is connected to the wiring 50 at the connection point 55. The discharge part 70 is provided in order to prevent the overcharge from the solar cell 11 to the secondary battery 12, and when the voltage stored in the secondary battery 12 becomes equal to or higher than a predetermined value, the solar cell 11 changes to the secondary battery. In order to prevent overcharging to 12, it serves to discharge the power supplied from the solar cell 11 to the wiring 50.

  The discharge unit 70 is formed between the wiring 50 and a side different from the side 20a among the four sides of the semiconductor chip 10, that is, at least one side of the side 20b, the side 20c, or the side 20d. It is preferable. Since the discharge part 70 is formed between the wiring 50 and any one of the sides 20b to 20d, the semiconductor chip 10 and the line segment 100 connecting the first terminal 30 and the second terminal 40 and the wiring 50, the discharge portion 70 is formed outside the region 110 and is not formed inside the region 110. Therefore, the discharge portion 70 does not depend on the formation area of the discharge portion 70. A wiring layout of the wiring 50 is possible. As described above, since the degree of freedom in the layout of the wiring 50 is improved, the wiring 50 can be formed shorter than in the case where the discharge portion 70 is formed in the region 110. The wiring resistance can be further reduced.

  The third terminal 80 is a terminal to which the ground potential GND is supplied from the outside of the semiconductor chip, and is connected to the discharge unit 70. The current supplied from the solar cell 11 flowing through the wiring 50 is used when the overcharge from the solar cell 11 to the secondary battery 12 needs to be prevented, and the discharge unit 70 and the third terminal 80 connected to the wiring 50. To ground potential GND.

  The internal circuit 90 is formed in the semiconductor chip 10 according to various design matters. The internal circuit 90 is, for example, a circuit that monitors the voltage stored in the secondary battery 12 and performs predetermined control on the discharge unit 70 when the voltage of the secondary battery 12 exceeds a predetermined value. Alternatively, for example, a circuit having a function of controlling the switch element used in the backflow prevention unit 60 may be used, and the present invention is not limited to this, and various circuits may be formed.

  FIG. 2 is a circuit diagram of the discharge unit 70 formed in the semiconductor chip 10 according to the present invention. The first terminal 30, the second terminal 40, the wiring 50, the backflow prevention unit 60, the discharge unit 70, The circuit configuration of the third terminal 80 and the internal circuit 90 is shown. In FIG. 2, the same components as those in FIG. 1 are denoted by the same reference numerals and description thereof is omitted. Further, FIG. 2 merely shows a circuit configuration, and does not show each arrangement in the semiconductor chip 10.

  The discharge unit 70 includes a discharge transistor unit 45 in which a plurality of discharge transistors Q1, Q2,..., Qn, which are N-type transistors, are formed, and the discharge transistors Q1, Q2 formed in the discharge transistor unit 45. ,..., Qn, each drain D is connected to the wiring 50 at a connection point 55 on the wiring 50. The sources S of the discharge transistors Q1, Q2,..., Qn are connected to the third terminal 80. The gates G of the discharge transistors Q1, Q2,..., Qn are, for example, current mirror connected to a discharge transistor control unit 95 formed as an internal circuit 90 connected to the wiring 50. ON / OFF of Q1, Q2,..., Qn is controlled by the discharge transistor control unit 95. The discharge transistors Q1, Q2,..., Qn may be P-type transistors.

  The discharge part 70 is used in order to prevent the overcharge from the solar cell 11 to the secondary battery 12 as mentioned above. Hereinafter, an example of the discharge operation of the discharge unit 70 will be described. Hereinafter, an N-type transistor is used as the discharge transistor.

  First, when the voltage of the secondary battery 12 is equal to or lower than a predetermined value, 0 V is supplied from the discharge transistor control unit 95 to the gates of the discharge transistors Q1, Q2,. Each of Q1, Q2,..., Qn is off. Next, when the voltage of the secondary battery 12 exceeds a predetermined value, the discharge transistor control unit 95 detects this, and each of the discharge transistors Q1, Q2,..., Qn is detected from the discharge transistor control unit 95. A predetermined voltage is applied to the gates of the transistors Q1, Q2,..., Qn. When the discharge transistors Q1, Q2,..., Qn are turned on, the current supplied from the solar cell 11 to the wiring 50 via the first terminal 30 starts to flow to the discharge unit 70 side. That is, the current flowing from the solar cell 11 to the secondary battery 12 decreases. With the above operation, overcharge from the solar battery 11 to the secondary battery 12 is prevented.

  Here, the discharge characteristic of the discharge part 70 is demonstrated. The discharge characteristics of the discharge part 70 represent the degree to which the current flowing through the wiring 50 flows to the discharge part 70 side when the discharge transistors Q1, Q2,..., Qn are turned on. Accordingly, the current flowing through the wiring 50 can be more attracted to the discharge unit 70, and overcharge from the solar cell 11 to the secondary battery 12 can be suppressed. Note that the discharge characteristics of the discharge unit 70 in the semiconductor chip 10 depend on the magnitude of the wiring resistance from the first terminal 30 to the third terminal 80. Therefore, by reducing the wiring resistance from the first terminal 30 to the third terminal 80, higher discharge characteristics can be obtained, that is, the current flowing through the wiring 50 to the second terminal 40 can be obtained. Thus, it can be drawn closer to the discharge unit 70 side.

  Hereinafter, the arrangement of the discharge unit 70 in the semiconductor chip 10 that can obtain higher discharge characteristics of the discharge unit 70 will be described with reference to FIG. 1 again.

  As shown in FIG. 1, the discharge unit 70 is preferably connected between the first terminal 30 and the backflow prevention unit 60 on the wiring 50. In other words, the discharge unit 70 is preferably connected to the wiring 50 at a position on the wiring 50 that is closer to the first terminal 30 than the backflow prevention unit 60. Thereby, compared with the case where the discharge part 70 is connected between the 2nd terminal 40 and the backflow prevention part 60 on the wiring 50, the wiring length from the 1st terminal 30 to the discharge part 70 is shortened. Since the wiring resistance can be reduced, the discharge characteristics of the discharge unit 70 can be further improved.

  Moreover, it is preferable that the wiring resistance in the wiring 50 from the first terminal 30 to the discharge unit 70 is smaller than the wiring resistance in the wiring 50 from the second terminal 40 to the discharge unit 70. As an example of this, the length of the wiring 50 from the first terminal 30 to the discharge unit 70 is shorter than the length of the wiring 50 from the second terminal 40 to the discharge unit 70.

  In addition, the third terminal 80 is preferably formed along the side closest to the place where the discharge unit 70 is disposed, among the four sides of the semiconductor chip 10. Since the third terminal 80 is formed along the side closest to the place where the discharge unit 70 is disposed, the discharge unit 70 is compared to the case where the third terminal 80 is formed on the other side. Since the length of the wiring connecting the first terminal 80 and the third terminal 80 can be made the shortest and the wiring resistance of the wiring can be made the smallest, the discharge characteristics of the discharge unit 70 can be made higher. In the semiconductor chip 10 shown in FIG. 1, the third terminal 80 is preferably formed at the closest position along the side 20 a among the sides 20 a to 20 d.

  Although FIG. 1 shows the case where the first terminal 30 and the second terminal 40 are formed adjacent to each other along the side 20a, the present invention is not limited to this, and the first terminal 30 and the second terminal are not limited thereto. 40 may be formed with another external terminal. Even if another external terminal is formed between the first terminal 30 and the second terminal 40, in the first embodiment of the present invention, the first terminal 30 and the second terminal 40 are This is because the wiring resistance of the wiring 50 can be suppressed at that time because they are not formed on the sides facing each other. However, no other external terminal is formed between the first terminal 30 and the second terminal 40, and the first terminal 30 and the second terminal 40 are formed adjacent to each other. preferable. This is because, when another external terminal is formed between the first terminal 30 and the second terminal 40, the layout of the wiring 50 needs to avoid the other external terminal. Therefore, the wiring length of the wiring 50 may be determined depending on the arrangement of other external terminals, which may cause a reduction in the degree of freedom of the layout of the wiring 50. Since the second terminal 40 is formed adjacently, the wiring length of the wiring 50 can be determined without depending on the arrangement of the other external terminals, so that the flexibility of the layout of the wiring 50 is not reduced. This is because an increase in wiring resistance of the wiring 50 can be further suppressed.

  As described above, according to the semiconductor chip 10 according to the first embodiment of the present invention, firstly, the first terminal 30 electrically connected to the solar cell 11 and the secondary battery 12 are electrically connected. Since each of the second terminals 40 is formed along the side 20a of the semiconductor chip 10 formed in a rectangular shape, the first terminal 30 and the second terminal 40 are electrically connected to each other. The wiring 50 to be connected does not extend from one side of the semiconductor chip 10 to the other side opposite to the one side. For this reason, when the length of the wiring 50 which electrically connects the solar cell 11 and the secondary battery 12 becomes difficult to be influenced by the other internal circuit 90, and the secondary battery 12 is charged from the solar cell 11 The electrical loss can be reduced.

  Second, the discharge unit 70 is between the wiring 50 and a side different from the side 20a of the four sides of the semiconductor chip 10, that is, between at least one side of the side 20b, side 20c, or side 20d. By being formed, the wiring layout of the wiring 50 independent of the formation area of the discharge part 70 becomes possible, and the wiring resistance of the wiring 50 can be further reduced.

  Third, the discharge unit 70 is connected between the first terminal 30 and the backflow prevention unit 60 on the wiring 50, so that the discharge unit 70 is connected to the second terminal 40 on the wiring 50. Compared with the case where it is connected between the backflow prevention part 60, the wiring length from the 1st terminal 30 to the discharge part 70 can be shortened, and wiring resistance can be reduced.

  Fourthly, the third terminal 80 is formed along the side closest to the place where the discharge unit 70 is disposed, among the four sides of the semiconductor chip 10, so that the third terminal 80 is the other side. Compared with the case where the wiring is formed on the side, the length of the wiring connecting the discharge portion 70 and the third terminal 80 can be made the shortest, and the wiring resistance of the wiring can be made the smallest.

Fifth, since the first terminal 30 and the second terminal 40 are formed adjacent to each other along the side 20a, the degree of freedom in layout of the wiring 50 due to other external terminals can be increased. Since no reduction is caused, an increase in the wiring resistance of the wiring 50 can be suppressed.
(Second Embodiment)

  FIG. 3 shows a charge control system including a semiconductor chip 10 according to the second embodiment of the present invention, and is composed of a semiconductor chip 10, a solar cell 11, and a secondary battery 12. In addition, about the structure same as the charge control system as described in the 1st Embodiment of this invention, the same number is attached | subjected and the description is abbreviate | omitted.

  The semiconductor chip 10 is formed in a rectangular shape by being bordered by the sides 20a, 20b, 20c, and 20d as four sides. The semiconductor chip 10 is formed along the side 20a as one side of the four sides, and is along the first terminal 30 electrically connected to the solar cell 11 and the side 20b as the other side adjacent to the side 20a. A second terminal 40 that is electrically connected to the secondary battery 12 and a wiring 50 that electrically connects the first terminal 30 and the second terminal 40.

  In the charge control system according to the second embodiment of the present invention, the second terminal 40 is formed along the side 20b adjacent to the side 20a when compared with the charge control system according to the first embodiment. Is different.

  The second terminal 40 is formed at the closest position along the side 20b among the sides 20a to 20d. The second terminal 40 is connected to the secondary battery 12 and plays a role as a window for transferring the power supplied from the solar battery 11 output from the semiconductor chip 10 to the secondary battery 12. Note that the second terminal 40 is formed adjacent to the first terminal 30.

  The discharge part 70 is preferably formed between the wiring 50 and a side different from the side 20a and the side 20b of the four sides of the semiconductor chip 10, that is, any one side of the side 20c or the side 20d. . Since the discharge part 70 is formed between the wiring 50 and one of the side 20c and the side 20d, the semiconductor chip 10 and the line segment 100a connecting the first terminal 30 and the second terminal 40 and the wiring 50, the discharge portion 70 is formed outside the region 110a and is not formed inside the region 110a. Therefore, the discharge portion 70 does not depend on the formation area of the discharge portion 70. The wiring layout of the wiring 50 becomes possible, the wiring 50 can be formed shorter than the case where the discharge part 70 is formed in the region 110a, and the wiring resistance of the wiring 50 can be further reduced.

  In the semiconductor chip 10 according to the second embodiment, the discharge part 70 is preferably formed in a region 110b surrounded by the side 20a, the side 20b, and the line segment 100a. For example, when the wiring 50 is formed on the shortest path between the first terminal 30 and the second terminal 40 in order to suppress an increase in wiring resistance, that is, the wiring 50 is shortest, the region 110b is It may become an unused area. In this case, in order to effectively use the region 110b, it is more preferable to form the discharge part 70 in the region 110b. Further, even when the wiring 50 is not formed so as to be the shortest, it is preferable to arrange the discharge portion 70 in the region 110b and effectively use the region 110b.

  Further, the discharge unit 70 is preferably connected between the first terminal 30 and the backflow prevention unit 60 on the wiring 50. In other words, the discharge unit 70 is preferably connected to the wiring 50 at a position on the wiring 50 that is closer to the first terminal 30 than the backflow prevention unit 60. Thereby, compared with the case where the discharge part 70 is connected between the 2nd terminal 40 and the backflow prevention part 60 on the wiring 50, the wiring length from the 1st terminal 30 to the discharge part 70 is shortened. Since the wiring resistance can be reduced, the discharge characteristics of the discharge unit 70 can be further improved.

  The magnitude of the wiring resistance in the wiring 50 from the first terminal 30 to the discharge part 70 is preferably smaller than the wiring resistance in the wiring 50 from the second terminal 40 to the discharge part 70. As an example of this, the length of the wiring 50 from the first terminal 30 to the discharge unit 70 is shorter than the length of the wiring 50 from the second terminal 40 to the discharge unit 70.

  In addition, the third terminal 80 is preferably formed along the side closest to the place where the discharge unit 70 is disposed, among the four sides of the semiconductor chip 10. Since the third terminal 80 is formed along the side closest to the place where the discharge unit 70 is disposed, the discharge unit 70 is compared to the case where the third terminal 80 is formed on the other side. Since the length of the wiring connecting the first terminal 80 and the third terminal 80 can be made the shortest and the wiring resistance of the wiring can be made the smallest, the discharge characteristics of the discharge unit 70 can be made higher. In the semiconductor chip 10 shown in FIG. 3, the third terminal 80 is preferably formed at a position close to and along the side 20 a among the sides 20 a to 20 d.

  FIG. 3 shows the case where the first terminal 30 and the second terminal 40 are formed adjacent to each other. However, the present invention is not limited to this, and the gap between the first terminal 30 and the second terminal 40 is not limited thereto. Other external terminals may be formed. Even if another external terminal is formed between the first terminal 30 and the second terminal 40, in the second embodiment of the present invention, the first terminal 30 and the second terminal 40 are This is because the increase in the wiring resistance of the wiring 50 can be suppressed at that time because they are not formed on opposite sides. However, no other external terminal is formed between the first terminal 30 and the second terminal 40, and the first terminal 30 and the second terminal 40 are formed adjacent to each other. preferable. This is because, when another external terminal is formed between the first terminal 30 and the second terminal 40, the layout of the wiring 50 needs to avoid the other external terminal. Therefore, the wiring length of the wiring 50 may be determined depending on the arrangement of other external terminals, which may cause a reduction in the degree of freedom of the layout of the wiring 50. Since the second terminal 40 is formed adjacently, the wiring length of the wiring 50 can be determined without depending on the arrangement of the other external terminals, so that the flexibility of the layout of the wiring 50 is not reduced. This is because an increase in wiring resistance of the wiring 50 can be further suppressed.

  As described above, according to the semiconductor chip 10 according to the second embodiment of the present invention, first, the side of the semiconductor chip 10 in which the first terminal 30 electrically connected to the solar cell 11 is formed in a rectangular shape. The second terminal 40 formed along the side 20a and electrically connected to the secondary battery 12 is formed along the side 20b adjacent to the side 20a. The wiring 50 that electrically connects the terminal 40 is not formed extending from one side of the semiconductor chip 10 to the other side facing the one side. For this reason, when the length of the wiring 50 which electrically connects the solar cell 11 and the secondary battery 12 becomes difficult to be influenced by the other internal circuit 90, and the secondary battery 12 is charged from the solar cell 11 The electrical loss can be reduced.

  Second, the discharge part 70 is formed between the wiring 50 and a side different from the side 20a and the side 20b of the semiconductor chip 10, that is, any one side of the side 20c or the side 20d. Thus, the wiring layout of the wiring 50 independent of the formation area of the discharge part 70 becomes possible, and the increase in wiring resistance can be suppressed to a smaller level.

  Third, the discharge unit 70 is connected between the first terminal 30 and the backflow prevention unit 60 on the wiring 50, so that the discharge unit 70 is connected to the second terminal 40 on the wiring 50. Compared with the case where it is connected between the backflow prevention part 60, the wiring length from the 1st terminal 30 to the discharge part 70 can be shortened, and wiring resistance can be reduced.

  Fourthly, the third terminal 80 is formed along the side closest to the place where the discharge unit 70 is disposed, among the four sides of the semiconductor chip 10, so that the third terminal 80 is the other side. Compared with the case where the wiring is formed on the side, the length of the wiring connecting the discharge portion 70 and the third terminal 80 can be made the shortest, and the wiring resistance of the wiring can be made the smallest.

  Fifth, since the first terminal 30 and the second terminal 40 are formed adjacent to each other, the layout flexibility of the wiring 50 may be reduced due to other external terminals. Therefore, an increase in wiring resistance of the wiring 50 can be suppressed.

DESCRIPTION OF SYMBOLS 10 Semiconductor chip 20a-20d Side 30 1st terminal 40 2nd terminal 50 Wiring 60 Backflow prevention part 70 Discharge part 80 3rd terminal 90 Internal circuit

Claims (3)

It is a semiconductor chip formed into a rectangle with four sides,
A first terminal formed along one of the four sides and electrically connected to the solar cell;
A second terminal formed along the one side and electrically connected to the secondary battery;
Wiring for electrically connecting the first terminal and the second terminal;
It is electrically connected to the wiring, and is disposed outside a region surrounded by the line segment connecting the first terminal and the second terminal and the wiring, and is supplied from the solar cell. A discharge part for discharging the electric power,
A third terminal formed on the outside of the region and along the one side and electrically connecting the discharge part and a ground potential;
Have
The third terminal is a position where a length of a line segment connecting the first terminal and the third terminal is shorter than a length of a line segment connecting the second terminal and the third terminal. A semiconductor chip characterized in that it is formed. It is a semiconductor chip formed into a rectangle with four sides,
A first terminal formed along one of the four sides and electrically connected to the solar cell;
A second terminal formed along the other side adjacent to the one side and electrically connected to the secondary battery;
Wiring for electrically connecting the first terminal and the second terminal;
The solar cell is electrically connected to the wiring and is disposed in a region surrounded by the one side, the other side, and a line segment connecting the first terminal and the second terminal. A discharge unit for discharging the power supplied from
A semiconductor chip comprising: The discharge unit is electrically connected to a third terminal connected to a ground potential;
The third terminal is outside a region surrounded by a line segment connecting the first terminal and the second terminal and the wiring, and along a side closest to the discharge portion. The semiconductor chip according to claim 2, formed.

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