JP6142586B2 - Method for manufacturing piezoelectric film, method for manufacturing piezoelectric element - Google Patents

Description

The present invention relates to a process for producing a piezoelectric film, it relates to the production how the piezoelectric element.

  2. Description of the Related Art Conventionally, a piezoelectric material has a characteristic of converting an electric signal and displacement or pressure, so that it is used in various devices including sensors and actuators. For example, PZT is used as the piezoelectric material.

  A sol-gel method (CSD method), a sputtering method, a CVD method, or the like is used as a method for producing a PZT crystal film that is a piezoelectric film. In particular, the sol-gel method is widely adopted as a very effective film formation method because it has the advantage of uniformly covering a large area at a low cost with a composition as designed with a multi-component oxide compared to other methods. ing.

  By the way, in order to fabricate a PZT crystal film, for example, an uncrystallized PZT film formed on a substrate is externally heated with an electric furnace, an RTA (Rapid Thermal Annealing) device, or the like, so that the temperature is 600 ° C. or higher for a certain time or longer. Annealing process is performed. In the annealing process, in order to avoid heating the entire substrate, for example, crystallization is performed by irradiating only the PZT film with a laser.

  As an example of such a method, it is disclosed that an amorphous PZT film formed by a sputtering method is crystallized by irradiating a XeCl pulse laser (see, for example, Patent Document 1). The crystallized PZT film is mainly the (111) plane.

  As another example, an uncrystallized PZT film is formed on an LNO / Si substrate by a sol-gel method, and a PZT (100) film is formed by irradiation with a pulsed excimer laser while heating at 500 ° C. (For example, refer nonpatent literature 1).

  As another example, a non-crystallized PZT film coated on a Pt / Ti / quartz substrate by a sol-gel method is heat-treated at 120 ° C. for 5 minutes and at 350 ° C. for 30 minutes. Thereafter, it is disclosed that a PZT (100) film is formed by continuous wave green laser irradiation (see, for example, Non-Patent Document 2).

  However, the PZT film having the main orientation direction (100) shown in Non-Patent Document 1 and Non-Patent Document 2 has a large displacement, but the piezoelectric constant changes greatly depending on the electric field strength. There are problems in terms of stability and controllability.

  On the other hand, in Patent Document 1, amorphous PZT formed by a sputtering method is irradiated with a XeCl pulse laser to crystallize a PZT film having a main orientation direction of (111). A PZT film whose main orientation direction is the (111) direction is excellent in stability and controllability. However, when a sol-gel solution is used, the orientation and crystal quality of the formed crystal film differ depending on the amorphization conditions of the substrate and coating film, and the main orientation direction of the crystallized PZT film is always (111). It is not always the direction.

  This invention is made | formed in view of said point, and makes it a subject to provide the manufacturing method etc. of the piezoelectric film whose main orientation direction using a sol-gel liquid is a (111) direction.

The method for manufacturing a piezoelectric film is a method for manufacturing a piezoelectric film mainly composed of a composite oxide containing lead (Pb), titanium (Ti), and zirconium (Zr). A step of forming a coating film; a step of heat-treating the coating film to form an amorphous film; and a step of heat-treating the amorphous film to crystallize to form the piezoelectric film. In the forming step, the coating film is heat-treated at a temperature of 280 ° C. or lower, and in the step of forming the piezoelectric film, a laser beam that passes through the amorphous film is irradiated to the object to be processed through the amorphous film. It is a requirement to heat the object to be processed and to transfer the heat of the object to be processed to the amorphous film to crystallize the amorphous film .

  According to the disclosed technology, it is possible to provide a method for manufacturing a piezoelectric film using a sol-gel solution whose main orientation direction is the (111) direction.

It is a figure for demonstrating the manufacturing method of the piezoelectric film which concerns on 1st Embodiment. It is a figure which illustrates the X-ray-diffraction result of a PZT film | membrane. It is sectional drawing which illustrates the piezoelectric element which concerns on 2nd Embodiment. It is a graph which illustrates the PE hysteresis curve of the piezoelectric element which concerns on 2nd Embodiment. It is sectional drawing which illustrates the droplet discharge head which concerns on 3rd Embodiment. FIG. 6 is a cross-sectional view showing an example in which a plurality of droplet discharge heads of FIG. It is a perspective view which illustrates an inkjet recording device. It is a side view which illustrates the mechanism part of an inkjet recording device.

  Hereinafter, embodiments for carrying out the invention will be described with reference to the drawings. In the drawings, the same components are denoted by the same reference numerals, and redundant description may be omitted.

<First Embodiment>
First, a method for manufacturing a piezoelectric film will be described. The piezoelectric film according to the present embodiment includes a composite oxide containing lead (Pb), titanium (Ti), and zirconium (Zr) as a main component.

FIG. 1 is a diagram for explaining a method of manufacturing a piezoelectric film according to the first embodiment. First, in the step shown in FIG. 1A, a base substrate for forming a PZT (111) piezoelectric film is prepared. As the base substrate, for example, a silicon substrate 11 (Si substrate), a silicon oxide film 12 (SiO ₂ film), a titanium oxide film 13 (TiOx film), and a platinum film 14 (Pt film) are sequentially stacked. The body can be used.

  The thickness of the silicon substrate 11 can be set to about 650 μm, for example. The thickness of the silicon oxide film 12 can be set to about 600 nm, for example. The thickness of the titanium oxide film 13 can be about 50 nm, for example. The thickness of the platinum film 14 can be about 100 nm, for example.

  Next, in the step shown in FIG. 1B, an amorphous PZT film 15 is formed on the platinum film 14. Specifically, first, for example, lead acetate, a zirconium alkoxide compound, and a titanium alkoxide compound are used as starting materials, and dissolved in methoxyethanol (for example, 2-methoxyethanol) as a common solvent (main solvent). Make it. This homogeneous solvent is referred to as PZT sol-gel solution or PZT precursor solution. In addition, it is also possible to use 1-butanol, 2-butoxyethanol, etc. as a common solvent (main solvent).

The composite oxide solid content concentration of the PZT sol-gel solution can be set to 0.1 to 0.5 mol / liter, for example. The mixing amount of lead acetate, zirconium alkoxide compound, and titanium alkoxide compound can be appropriately selected by those skilled in the art according to the desired composition of PZT (ratio of PbZrO ₃ and PbTiO ₃ ). For example, the aforementioned PZT (53/47) can be used.

Note that PZT is a composite oxide containing lead (Pb), titanium (Ti), and zirconium (Zr). More specifically, it is a solid solution of lead zirconate (PbZrO ₃ ) and lead titanate (PbTiO ₃ ), and the characteristics of PZT differ depending on the ratio of PbZrO ₃ and PbTiO ₃ . For example, the ratio of PbZrO ₃ and PbTiO ₃ is 53:47, and the chemical formula indicates Pb (Zr _0.53 , Ti _0.47 ) O ₃ , PZT generally indicated as PZT (53/47), etc. Can be used.

  Next, a PZT sol-gel solution is applied onto the platinum film 14 that is the object to be processed by, for example, a spin coating method to form a coating film. Then, the coating film is heat-treated for about 1 minute on a hot plate at about 120 ° C., for example. Thereafter, the coating film is further thermally decomposed by a hot plate having a boiling point temperature of methoxyethanol (124 ° C.) to 280 ° C. (preferably a temperature of 250 ° C. or less) for about 1 to 10 minutes. An amorphous PZT film 15 is formed on the film 14. The film thickness of the amorphous PZT film 15 can be about 30 to 80 nm, for example.

  The temperature at which the coating film of the PZT sol-gel solution used in the present embodiment can be thermally decomposed is 124 ° C. or higher at the boiling point of methoxyethanol, which is the main solvent. Therefore, in this embodiment, the amorphous PZT film 15 is formed by heat treatment at a temperature of 124 ° C. or higher and 280 ° C. or lower. The technical significance of heat-treating the coating film at a temperature of 280 ° C. or lower (preferably a temperature of 250 ° C. or lower) when forming the amorphous PZT film 15 will be described later.

  Even when a sol-gel liquid other than methoxyethanol is used as the main solvent, the heat treatment temperature of the coating film is a temperature not lower than the boiling point of the main solvent and not higher than 280 ° C. (preferably a temperature not higher than 250 ° C.). For example, when 1-butanol is the main solvent, the treatment temperature of the coating film is 117 ° C. or higher and 280 ° C. or lower (preferably 250 ° C. or lower), which is the boiling point of 1-butanol. When 2-butoxyethanol is the main solvent, the treatment temperature of the coating film is a temperature of 171 ° C. or higher and 280 ° C. or lower (preferably a temperature of 250 ° C. or lower) which is the boiling point of 2-butoxyethanol.

  Next, in the process shown in FIG. 1C, the amorphous PZT film 15 is crystallized by heat treatment to form a PZT film 16 that is a piezoelectric film. Specifically, for example, the base substrate on which the amorphous PZT film 15 is formed is placed on the stage 500, and the amorphous PZT film 15 is irradiated from the laser irradiation apparatus 600 while moving the stage 500.

  Note that the stage 500 is, for example, an XY stage, and is configured to be able to change the relative positional relationship with the laser irradiation apparatus 600. The laser irradiation apparatus 600 is an apparatus that can irradiate laser light 600x that is continuous wave laser light having a wavelength of about 980 nm, for example. The spot shape of the laser beam 600x can be, for example, a substantially rectangular shape.

The laser beam 600x near the wavelength of 980 nm is hardly absorbed by the amorphous PZT film 15 and therefore reaches the platinum film 14 which is the lower layer of the amorphous PZT film 15. On the other hand, the platinum film 14 has a very large absorption coefficient in the vicinity of a wavelength of 980 nm, which is approximately 7 × 10 ⁵ cm ⁻¹ . Further, for example, in the platinum film 14 having a film thickness of 100 nm, the light transmittance in the vicinity of the wavelength of 980 nm is 1% or less. Accordingly, the platinum film 14 absorbs almost all of the light energy of the laser beam 600x having a wavelength of about 980 nm irradiated to the platinum film 14.

  The light energy of the laser beam 600x absorbed by the platinum film 14 changes to heat and heats the platinum film 14. The heat of the platinum film 14 is transmitted (diffused) to the amorphous PZT film 15 formed on the platinum film 14, and the amorphous PZT film 15 is crystallized to become the PZT film 16. The thickness of the PZT film 16 can be set to about 30 to 80 nm, for example. By repeatedly executing the steps shown in FIGS. 1B and 1C, a plurality of crystallized PZT films 16 having a thickness of about 30 to 80 nm can be stacked.

In general, the crystallization temperature of an amorphous PZT film is about 600 ° C. to 850 ° C., which is considerably lower than the melting point of platinum (1768 ° C.). Therefore, the amorphous PZT film 15 can be heated and crystallized without damaging the platinum film 14 by controlling the energy density and irradiation time of the laser beam 600x incident on the platinum film 14. The energy density of the laser beam 600x can be set to, for example, about 100 to 1000 W / cm ² . The irradiation time of the laser beam 600x can be set to about 1 ms to 200 ms, for example.

  Here, in the process shown in FIG. 1B, when forming the amorphous PZT film 15, the technical significance of heat-treating the coating film at a temperature of 280 ° C. or lower (preferably a temperature of 250 ° C. or lower) is as follows. This will be described based on the experimental results.

  First, by repeating the steps shown in FIGS. 1B and 1C three times, a plurality of crystallized three-layer PZT films were produced. Specifically, the temperature (thermal decomposition temperature) for heat-treating the coating film when forming the amorphous PZT film 15 in the step shown in FIG. 1B was set to a predetermined temperature in the range of 200 ° C. to 450 ° C.

  Then, the amorphous PZT film 15 formed by heat-treating the coating film at a predetermined temperature is repeatedly executed three times in the process shown in FIG. 1 (c), thereby forming a crystallized three-layer PZT film. Several types were produced. In one PZT film, the predetermined temperature is the same for all three times. Thereafter, X-ray diffraction was performed on each of the plurality of types of PZT films (three layers) produced. However, the three-layer PZT film is an example, and a multilayer PZT film may be further laminated.

  FIG. 2 is a diagram illustrating an X-ray diffraction result of the PZT film. In FIG. 2, the vertical axis represents (111) Lotgering Factor, and the horizontal axis represents the thermal decomposition temperature (heat treatment temperature).

  Here, the Lotgering factor represents the ratio of each orientation when the sum of the peak intensities of each orientation obtained by X-ray diffraction is 1, the denominator is the sum of the peak intensities of each orientation, and the numerator is arbitrary. It is an average orientation degree when it is set as the peak intensity of orientation. In the present embodiment, the molecules are (111) oriented. Here, the Lotgering factor when the molecule is in the (111) orientation is referred to as (111) Lotgering factor.

  As shown in FIG. 2, when the temperature (thermal decomposition temperature) when the amorphous PZT film 15 is formed by heat-treating the coating film is 280 ° C. or less, (111) lots of the crystallized PZT film are subsequently formed. The Gering factor is 0.5 or more (50% or more). That is, the main orientation direction of the crystallized PZT film is the (111) direction. In the present application, “the main orientation direction is the (111) direction” means that the (111) Lotgering factor is 50% or more.

  When the temperature (thermal decomposition temperature) when forming the amorphous PZT film 15 by heat-treating the coating film is 250 ° C. or less, the (111) Lotgering factor of the subsequently crystallized PZT film is 0. 9 or more (90% or more), which is more preferable. That is, the (111) orientation degree of the crystallized PZT film becomes strong, which is more preferable.

  As described above, in the first embodiment, the coating film formed from the sol-gel liquid is heat-treated at a temperature of 280 ° C. or lower (preferably a temperature of 250 ° C. or lower) to form an amorphous film, and further the laser is applied to the amorphous film. Irradiate light and heat locally. Thereby, a piezoelectric film (PZT crystal film) having a main orientation direction of (111) can be produced. A piezoelectric film (PZT crystal film) having an orientation direction of (111) has an easily controllable characteristic, so that it is suitable to be applied to a sensor, an actuator, or the like, and particularly suitable to a micro device in which precise control is performed.

  In addition, since the amorphous PZT film is locally heated and is not heated to other members (other structures, elements, etc.) that do not require heat treatment, it is difficult to cause dimensional accuracy shift due to thermal damage or thermal stress. Performance degradation can be avoided. Also in this respect, it is preferable to apply to a sensor, an actuator, or the like, which is a device having a structure, element, or the like that does not require heat treatment, and particularly to a micro device in which precise control is performed.

  Further, it is also preferable in that an arbitrary piezoelectric film pattern can be formed by directly scanning a laser beam with a predetermined position on the substrate.

  In the above description, the amorphous PZT film 15 is irradiated with the continuous wave laser beam 600x. However, instead of the continuous wave laser beam 600x, a pulsed laser beam may be irradiated. Further, the wavelength of the laser beam 600x may be other than around 980 nm.

In the above description, PZT is used as the piezoelectric material, but Pb (Zr _x , Ti _1-x ) O ₃ is the main component, and at least of La, Nb, Mn, Fe, Ca, Gd, Sr, and Ge. A piezoelectric material including one may be used. In the above description, the surface of the base substrate is the platinum film 14, but instead of the platinum film 14, for example, a metal film or metal oxide containing at least one metal of Ir, Rh, Ru, Pd, and Ti. A film may be used. In the above description, the PZT film 16 is formed directly on the platinum film 14. However, an oxide film seed layer or the like may be provided between the PZT film 16 and the platinum film 14.

<Second Embodiment>
In the second embodiment, an example of a piezoelectric element is shown. In the second embodiment, the description of the same components as those of the already described embodiments is omitted.

FIG. 3 is a cross-sectional view illustrating a piezoelectric element according to the second embodiment. Referring to FIG. 3, in the piezoelectric element 1 according to the second embodiment, on a silicon substrate 11 (Si substrate), a silicon oxide film 12 (SiO ₂ film), a titanium oxide film 13 (TiOx film), platinum A film 14 (Pt film), a PZT film 16, and a platinum film 17 (Pt film) are sequentially stacked.

The silicon substrate 11 (Si substrate), silicon oxide film 12 (SiO ₂ film), titanium oxide film 13 (TiOx film), platinum film 14 (Pt film), and PZT film 16 will be described in the first embodiment. That's right. In the piezoelectric element 1, the platinum film 14 functions as a lower electrode, and the platinum film 17 functions as an upper electrode.

  The PZT film 16 is formed with a film thickness of about 150 nm in the process described in the first embodiment. In other words, the PZT film 16 repeats the necessary number of steps of heat-treating a coating film formed from a sol-gel solution at a temperature of 280 ° C. or lower to form an amorphous film, and further irradiating the amorphous film with laser light to locally heat it. Thus, the film thickness is about 150 nm. The PZT film 16 is patterned into a predetermined shape.

  The platinum film 17 functioning as the upper electrode can be formed on the PZT film 16 by, for example, sputtering. The film thickness of the platinum film 17 can be about 100 nm, for example. The platinum film 14 is a typical example of the first electrode film according to the present invention, and the platinum film 17 is a typical example of the second electrode film according to the present invention.

Next, the electrical characteristics and electromechanical conversion ability (piezoelectric constant) of the piezoelectric element 1 were evaluated. First, it was confirmed by X-ray analysis that the main orientation direction of the PZT film 16 of the piezoelectric element 1 was the (111) direction. The electromechanical conversion film had a relative dielectric constant of 1200, a dielectric loss of 0.078, a remanent polarization of 61 μC / cm ² , and a coercive electric field of 207.6 kV / cm. This is a characteristic equivalent to that of a piezoelectric element manufactured by a conventional manufacturing process. FIG. 4 is a graph illustrating a PE hysteresis curve of the piezoelectric element according to the second embodiment. In addition, it was confirmed that the piezoelectric constant d33 of the PZT film 16 measured with an AFM (atomic force microscope) was the same value as the PZT film produced in the conventional manufacturing process.

  Thus, in the second embodiment, the piezoelectric element having the piezoelectric film manufactured in the process described in the first embodiment can obtain the same characteristics as the piezoelectric element manufactured in the conventional manufacturing process. It was confirmed.

<Third Embodiment>
In the third embodiment, an example of a droplet discharge head using a piezoelectric element is shown. In the third embodiment, the description of the same components as those of the already described embodiments is omitted.

  FIG. 5 is a cross-sectional view illustrating a droplet discharge head according to the third embodiment. Referring to FIG. 5, the droplet discharge head 2 includes a nozzle plate 20, a pressure chamber substrate 30, a vibration plate 40, and a piezoelectric element 50. The nozzle plate 20 is formed with nozzles 21 that eject ink droplets.

  The nozzle plate 20 can be formed by, for example, Ni electroforming. The nozzle plate 20, the pressure chamber substrate 30, and the vibration plate 40 may be referred to as a pressure chamber 31 (an ink channel, a pressurized liquid chamber, a pressurized chamber, a discharge chamber, a liquid chamber, or the like) that communicates with the nozzle 21. ) Is formed. The diaphragm 40 forms part of the wall surface of the ink flow path. In other words, the pressure chamber 31 is formed by the nozzle 21 communicating with each other, and is divided by the pressure chamber substrate 30 (which constitutes the side surface), the nozzle plate 20 (which constitutes the lower surface), and the vibration plate 40 (which constitutes the upper surface).

  The pressure chamber 31 can be produced, for example, by processing a silicon single crystal substrate using etching. As the etching in this case, it is preferable to use anisotropic etching. Anisotropic etching utilizes the property that the etching rate differs with respect to the plane orientation of the crystal structure. For example, in anisotropic etching immersed in an alkaline solution such as KOH, the (111) plane has an etching rate of about 1/400 compared to the (100) plane. Thereafter, the nozzle plate 20 having the nozzles 21 is joined. In FIG. 5, descriptions of liquid supply means, flow paths, fluid resistance, and the like are omitted.

The piezoelectric element 50 includes an adhesion layer 51, a lower electrode 52 (lower electrode film), a piezoelectric film 53, and an upper electrode 54 (upper electrode film), and pressurizes ink in the pressure chamber 31. Have The adhesion layer 51 is a layer made of, for example, Ti, TiO ₂ , TiN, Ta, Ta ₂ O ₅ , Ta ₃ N _{5, and the} like, and has a function of improving the adhesion between the lower electrode 52 and the diaphragm 40. However, the adhesion layer 51 is not an essential component of the piezoelectric element 50.

  The piezoelectric film 53 is formed in the process described in the first embodiment. That is, the piezoelectric film 53 repeats a necessary number of steps of heat-treating a coating film formed from a sol-gel solution at a temperature of 280 ° C. or lower to form an amorphous film, and further irradiating the amorphous film with laser light to locally heat it. Thus, a predetermined film thickness is formed.

  In the piezoelectric element 50, when a voltage is applied between the lower electrode 52 and the upper electrode 54, the piezoelectric film 53 is mechanically displaced. Along with the mechanical displacement of the piezoelectric film 53, the vibration plate 40 is deformed and displaced, for example, in the lateral direction (d31 direction), and pressurizes the ink in the pressure chamber 31. Thereby, ink droplets can be ejected from the nozzle 21.

  As shown in FIG. 6, a plurality of droplet discharge heads 2 can be arranged in parallel to form the droplet discharge head 3.

<Fourth embodiment>
In the fourth embodiment, an ink jet recording apparatus is exemplified as an example of a liquid droplet ejection apparatus including the liquid droplet ejection head 3 (see FIG. 6). FIG. 7 is a perspective view illustrating an ink jet recording apparatus. FIG. 8 is a side view illustrating a mechanism unit of the ink jet recording apparatus.

  Referring to FIGS. 7 and 8, the inkjet recording apparatus 4 is an inkjet that is an embodiment of a droplet 93 that is movable in the main scanning direction inside the recording apparatus main body 81 and the droplet discharge head 3 mounted on the carriage 93. The recording head 94 is accommodated. Further, the ink jet recording apparatus 4 houses a printing mechanism portion 82 and the like that are configured by an ink cartridge 95 that supplies ink to the ink jet recording head 94 and the like.

  A paper feed cassette 84 (or a paper feed tray) on which a large number of sheets 83 can be stacked can be detachably attached to the lower portion of the recording apparatus main body 81. Further, the manual feed tray 85 for manually feeding the paper 83 can be turned over. The paper 83 fed from the paper feed cassette 84 or the manual feed tray 85 is taken in, and after a required image is recorded by the printing mechanism unit 82, the paper is discharged to a paper discharge tray 86 mounted on the rear side.

  The printing mechanism 82 holds the carriage 93 slidably in the main scanning direction with a main guide rod 91 and a sub guide rod 92 which are guide members horizontally mounted on left and right side plates (not shown). An ink jet recording head 94 is mounted on the carriage 93 such that a plurality of ink discharge ports (nozzles) are arranged in a direction intersecting the main scanning direction and the ink droplet discharge direction is directed downward. The inkjet recording head 94 ejects ink droplets of each color of yellow (Y), cyan (C), magenta (M), and black (Bk). Further, the carriage 93 is mounted with replaceable ink cartridges 95 for supplying ink of each color to the ink jet recording head 94.

  The ink cartridge 95 has an air port (not shown) that communicates with the atmosphere above, an air port (not shown) that supplies ink to the ink jet recording head 94 below, and a porous body (not shown) filled with ink inside. ing. The ink supplied to the inkjet recording head 94 is maintained at a slight negative pressure by the capillary force of the porous body. Further, although the respective color heads are used here as the ink jet recording head 94, one head having nozzles for ejecting ink droplets of each color may be used.

  The carriage 93 is slidably fitted to the main guide rod 91 on the downstream side in the paper conveyance direction, and is slidably mounted on the sub guide rod 92 on the upstream side in the paper conveyance direction. In order to move and scan the carriage 93 in the main scanning direction, a timing belt 100 is stretched between a driving pulley 98 and a driven pulley 99 that are rotationally driven by the main scanning motor 97, so that the main scanning motor 97 is forward / reverse. The carriage 93 is reciprocated by the rotation. The timing belt 100 is fixed to the carriage 93.

  Further, the inkjet recording apparatus 4 conveys the fed sheet 83 by reversing the sheet feeding roller 101 for separating and feeding the sheet 83 from the sheet feeding cassette 84, the friction pad 102, the guide member 103 for guiding the sheet 83, and the like. A conveying roller 104 is provided. Further, the inkjet recording apparatus 4 is provided with a conveyance roller 105 that is pressed against the peripheral surface of the conveyance roller 104 and a leading end roller 106 that defines the feeding angle of the paper 83 from the conveyance roller 104. Thus, the paper 83 set in the paper feed cassette 84 is conveyed to the lower side of the ink jet recording head 94. The transport roller 104 is rotationally driven by a sub-scanning motor 107 through a gear train.

  The printing receiving member 109 which is a paper guide member guides the paper 83 sent out from the conveying roller 104 corresponding to the movement range of the carriage 93 in the main scanning direction on the lower side of the ink jet recording head 94. On the downstream side of the printing receiving member 109 in the sheet conveyance direction, a conveyance roller 111 and a spur 112 that are rotationally driven to send out the sheet 83 in the sheet discharge direction are provided. Further, a paper discharge roller 113 and a spur 114 for sending the paper 83 to the paper discharge tray 86, and guide members 115 and 116 for forming a paper discharge path are provided.

  During image recording, the inkjet recording head 94 is driven in accordance with the image signal while moving the carriage 93, thereby ejecting ink onto the stopped paper 83 to record one line and transporting the paper 83 by a predetermined amount. After that, the next line is recorded. Upon receiving a recording end signal or a signal that the trailing end of the paper 83 reaches the recording area, the recording operation is terminated and the paper 83 is discharged.

  A recovery device 117 for recovering defective ejection of the inkjet recording head 94 is provided at a position outside the recording area on the right end side in the movement direction of the carriage 93. The recovery device 117 includes a cap unit, a suction unit, and a cleaning unit. The carriage 93 is moved to the recovery device 117 side during printing standby, and the ink jet recording head 94 is capped by the capping unit, and the ejection port portion is kept in a wet state to prevent ejection failure due to ink drying. Further, by ejecting ink not related to recording during recording or the like, the ink viscosity of all the ejection ports is made constant, and stable ejection performance is maintained.

  When ejection failure occurs, the ejection port of the ink jet recording head 94 is sealed with a capping unit, and bubbles and the like are sucked out from the ejection port with the suction unit through the tube. Also, ink or dust adhering to the ejection port surface is removed by the cleaning means, and the ejection failure is recovered. Further, the sucked ink is discharged to a waste ink reservoir (not shown) installed at the lower part of the main body and absorbed and held by an ink absorber inside the waste ink reservoir.

  As described above, the ink jet recording apparatus 4 includes the ink jet recording head 94 which is an embodiment of the droplet discharge head 3. Therefore, there is no ink droplet ejection failure due to vibration plate driving failure, stable ink droplet ejection characteristics can be obtained, and image quality can be improved.

  The preferred embodiment has been described in detail above. However, the present invention is not limited to the above-described embodiment, and various modifications and replacements are made to the above-described embodiment without departing from the scope described in the claims. Can be added.

  For example, as described above, the piezoelectric element according to the present embodiment can be used as a component of a droplet discharge head used in an inkjet recording apparatus or the like, but is not limited thereto. The piezoelectric element according to the present embodiment may be used as a component such as a micro pump, an ultrasonic motor, an acceleration sensor, a two-axis scanner for a projector, an infusion pump, or the like.

  Alternatively, the amorphous PZT film may be crystallized by using a method other than laser light irradiation. For example, the amorphous PZT film may be crystallized by light irradiation from a flash lamp or the like. Alternatively, the amorphous PZT film may be crystallized using an oven or the like.

DESCRIPTION OF SYMBOLS 1 Piezoelectric element 2, 3 Droplet discharge head 11 Silicon substrate 12 Silicon oxide film 13 Titanium oxide film 14, 17 Platinum film 15 Amorphous PZT film 16 PZT film 20 Nozzle plate 21 Nozzle 30 Pressure chamber substrate 31 Pressure chamber 40 Vibration plate 50 Piezoelectric Element 51 Adhesive layer 52 Lower electrode 53 Piezoelectric film 54 Upper electrode 81 Recording device main body 82 Printing mechanism 83 Paper 84 Paper feed cassette 85 Manual feed tray 86 Paper discharge tray 91 Main guide rod 92 Subordinate guide rod 93 Carriage 94 Inkjet recording head 95 Ink Cartridge 97 Main scanning motor 98 Drive pulley 99 Driven pulley 100 Timing belt 101 Paper feed roller 102 Friction pad 103 Guide member 104 Transport roller 105 Transport roller 106 Front roller 107 Sub scanning motor 09 marked copy receiving member 111 transport roller 112 spur 113 paper discharge roller 114 spur 115, 116 guide member 117 recovery device 500 Stage 600 laser irradiation apparatus 600x laser beam

Japanese Patent Laid-Open No. 9-221366

"Low-temperature crystallization of CSD-derived PZT thin film with laser assisted annealing", Journal of the Ceramic Society of Japan, 117, 950 (2009) "Ferroelectric properties of Lead Zirconate Titanate thin film on glass substrate crystallized by continuous-wave green laser annealing", Japanese Journal of Applied Physics, 49, 04DH14 (2010)

Claims (8)

A method for manufacturing a piezoelectric film having as a main component a composite oxide containing lead (Pb), titanium (Ti), and zirconium (Zr),
Forming a coating film from a sol-gel solution on the object to be treated;
Heat-treating the coating film to form an amorphous film;
A step of crystallizing the amorphous film by heat treatment, and forming the piezoelectric film.
In the step of forming the amorphous film, the coating film is heat-treated at a temperature of 280 ° C. or lower ,
In the step of forming the piezoelectric film, a laser beam that passes through the amorphous film is irradiated to the object to be processed through the amorphous film to heat the object to be processed, and heat of the object to be processed is transferred to the amorphous film. And producing the piezoelectric film by crystallizing the amorphous film .   2. The method of manufacturing a piezoelectric film according to claim 1, wherein in the step of forming the amorphous film, the coating film is heat-treated at a temperature of 250 [deg.] C. or less. The piezoelectric film manufacturing method according to claim 1 or 2 , wherein, in the step of forming the coating film and the step of forming the amorphous film, a temperature of the object to be processed including the coating film is maintained at 280 ° C or lower. Method. Wherein in the step of forming the amorphous film, method for manufacturing a piezoelectric film according to any one of claims 1 to 3, characterized in that heat-treating the coating film in the main solvent temperature above the boiling point of the sol-gel liquid. 5. The method of manufacturing a piezoelectric film according to claim 4 , wherein a main solvent of the sol-gel solution is methoxyethanol, and the boiling point is 124.degree. 5. The method of manufacturing a piezoelectric film according to claim 4 , wherein a main solvent of the sol-gel liquid is 1-butanol and the boiling point is 117.degree. 5. The method for manufacturing a piezoelectric film according to claim 4 , wherein a main solvent of the sol-gel solution is 2-butoxyethanol, and the boiling point is 171.degree. Forming a piezoelectric film on the first electrode film;
Forming a second electrode film on the piezoelectric film,
Wherein in the step of forming the piezoelectric film, method for manufacturing a piezoelectric element characterized by forming the piezoelectric film by the method of manufacturing a piezoelectric film according to any one of claims 1 to 7.

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