JP6139211B2 - Cutting inserts and cutting tools - Google Patents
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- JP6139211B2 JP6139211B2 JP2013069248A JP2013069248A JP6139211B2 JP 6139211 B2 JP6139211 B2 JP 6139211B2 JP 2013069248 A JP2013069248 A JP 2013069248A JP 2013069248 A JP2013069248 A JP 2013069248A JP 6139211 B2 JP6139211 B2 JP 6139211B2
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- 239000010410 layer Substances 0.000 claims description 104
- 239000013078 crystal Substances 0.000 claims description 45
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 13
- 239000001257 hydrogen Substances 0.000 description 13
- 229910052739 hydrogen Inorganic materials 0.000 description 13
- 150000002431 hydrogen Chemical class 0.000 description 11
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 11
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 10
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- 241000755266 Kathetostoma giganteum Species 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
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- 238000005229 chemical vapour deposition Methods 0.000 description 3
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- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 2
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- 239000010941 cobalt Substances 0.000 description 2
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Description
本発明は、ホルダの先端に設けられたインサートポケットに取り付けられ、基体の表面に被覆層を設けた切削インサートおよび切削工具に関する。 The present invention relates to a cutting insert and a cutting tool which are attached to an insert pocket provided at the tip of a holder and which are provided with a coating layer on the surface of a substrate.
切削インサートとして、超硬合金やサーメット等の基体の表面に被覆層を成膜して、耐摩耗性、摺動性、耐欠損性を向上させたコーティング超硬合金が広く使われている。 As a cutting insert, a coated cemented carbide having a coating layer formed on the surface of a substrate such as cemented carbide or cermet to improve wear resistance, slidability, and fracture resistance is widely used.
例えば、特許文献１では、角型または台形形状の粒子からなるＴｉＣ層を成膜し、その表面にＡｌ２Ｏ３層を積層することによって、Ａｌ２Ｏ３層の密着力が向上することが開示されている。また、特許文献２では、基体と被覆層との界面の表面粗さＲｚを、すくい面で０．５〜５μｍ、逃げ面で１〜３０μｍとして、被覆層の密着性が高くかつ被削材の溶着を抑制できることが開示されている。 For example, in Patent Document 1, the adhesion of the Al 2 O 3 layer can be improved by forming a TiC layer made of square or trapezoidal particles and laminating the Al 2 O 3 layer on the surface thereof. It is disclosed. Further, in Patent Document 2, the surface roughness Rz of the interface between the substrate and the coating layer is set to 0.5 to 5 μm on the rake face and 1 to 30 μm on the flank face, so that the adhesion of the coating layer is high and the work material is It is disclosed that welding can be suppressed.
しかしながら、特許文献１、２の構成では、被覆層の密着性は向上するものの、被覆層の表面は平滑であり、切削加工する使用する際に、切削インサートの拘束力が不十分でびびりが発生し、切刃のチッピングや欠損が発生したり、切削の衝撃でインサートの拘束が緩み、切削中にインサートが動いてしまってインサートの載地面や拘束面が欠損してしまう等の問題があった。 However, in the configurations of Patent Documents 1 and 2, the adhesion of the coating layer is improved, but the surface of the coating layer is smooth, and when the cutting process is used, the cutting insert is not sufficiently restrained and chatter occurs. However, there are problems such as chipping and chipping of the cutting blade, loosening of the insert restraint due to the impact of cutting, and movement of the insert during cutting, leading to chipping of the insert ground surface and restraint surface. .
本発明は、上記課題に対して、ホルダに対して良好な拘束力を有し、安定した切削が可能な切削インサートおよび切削工具を提供することを目的とする。 In view of the above problems, an object of the present invention is to provide a cutting insert and a cutting tool that have a good restraining force on a holder and can perform stable cutting.
一態様の切削インサートは、基体と、該基体の表面に設けられた被覆層とを有し、すくい面及び逃げ面を備えたものであって、前記被覆層は、前記逃げ面に位置するＴｉ（Ｃ １
−ｘ Ｎ ｘ ）（０≦ｘ≦１）層を有し、該Ｔｉ（Ｃ １−ｘ Ｎ ｘ ）層の表面が、上方に向かって複数の尖形結晶が集合した凝集部と、該凝集部間に位置して前記凝集部を囲む谷部とを有し、前記すくい面における前記被覆層の表面粗さが、前記逃げ面における前記被覆層の表面粗さよりも小さいものである。
The cutting insert of one embodiment includes a substrate and a coating layer provided on a surface of the substrate, there is provided with a rake face and flank face, the covering layer is positioned on the flank Ti (C 1
-X N x) (having a 0 ≦ x ≦ 1) layer, the surface of the Ti (C 1-x N x ) layer, and a cohesive unit in which a plurality of cusps Katachiyui crystal upward direction has been set, located between the aggregated portion has a trough surrounding the agglomeration section, surface roughness of the covering layer in the rake face, is smaller than the surface roughness of the covering layer in the flank.
本発明の切削インサートによれば、逃げ面における最上層が、前記被覆層の表面に対して上方に向かって尖形のＴｉＮ結晶が集合した凝集部と、該凝集部間の谷部からなるとともに、すくい面における最上層の表面粗さが逃げ面における最上層の表面粗さよりも小さい。そのために、逃げ面に存在する最上層がホルダの拘束面に食い込んで、切削インサートがホルダに強固に拘束されるので、ホルダに対して良好な拘束力を有し、安定した切削が可能である。また、すくい面においては、被削材が溶着することを抑制して、切屑の流れがスムーズな切削インサートとなる。 According to the cutting insert of the present invention, the uppermost layer on the flank surface is composed of an agglomerated portion in which pointed TiN crystals are gathered upward with respect to the surface of the coating layer, and a valley between the agglomerated portions. The surface roughness of the uppermost layer on the rake face is smaller than the surface roughness of the uppermost layer on the flank face. Therefore, the uppermost layer present on the flank bites into the restraining surface of the holder, and the cutting insert is firmly restrained by the holder, so that the holder has a good restraining force and stable cutting is possible. . Further, on the rake face, welding of the work material is suppressed, and a cutting insert with a smooth chip flow is obtained.
図１の切削工具１は、ホルダ２の先端に設けられたインサートポケット３に、切削インサート（以下、インサートと略す場合がある。）４を装着したものである。インサート４は、図２（ａ）に示すように、すくい面５と逃げ面６との交差稜線部が切刃７を構成しており、板状で主面が概略正方形形状（ＣＮＭＡ／ＣＮＭＧ）からなる。そして、図２（ｂ）の模式断面図に示すように、インサート４は、基体８の表面に、最上層９がＴｉ（Ｃ１−ｘＮｘ）（０≦ｘ≦１）層からなる被覆層１０が設けられている。 The cutting tool 1 of FIG. 1 is a tool in which a cutting insert (hereinafter sometimes abbreviated as an insert) 4 is mounted in an insert pocket 3 provided at the tip of a holder 2. In the insert 4, as shown in FIG. 2 (a), the intersecting ridge line portion of the rake face 5 and the flank face 6 constitutes a cutting edge 7, which is plate-like and has a substantially square main surface (CNMA / CNMG). Consists of. Then, as shown in the schematic cross-sectional view of FIG. 2B, the insert 4 is a coating on the surface of the base 8 in which the uppermost layer 9 is a Ti (C 1-x N x ) (0 ≦ x ≦ 1) layer. Layer 10 is provided.
また、本実施態様によれば、図２（ｂ）に示すように、被覆層１０は、Ｔｉの炭化物、窒化物、炭窒化物、炭酸化物、窒酸化物および炭窒酸化物のうちの１層以上と、Ａｌ２Ｏ３層１１と、Ｔｉ（Ｃ１−ｘＮｘ）（０≦ｘ≦１）からなる最上層９とが順に積層されている。逃げ面６における最上層９は、図３の金属顕微鏡写真および走査型顕微鏡（ＳＥＭ）写真に示すように、被覆層１０の表面から上方に向かって尖形のＴｉ（Ｃ１−ｘＮｘ）（０≦ｘ≦１）結晶（以下、最上層結晶と称する場合がある。）１６が集合した凝集部１７と、凝集部１７間の谷部１８とからなる。一方、すくい面５における被覆層１０の表面粗さは逃げ面６の表面粗さよりも小さい。 Further, according to the present embodiment, as shown in FIG. 2B, the coating layer 10 is made of one of Ti carbide, nitride, carbonitride, carbonate, nitride oxide, and oxynitride. The Al 2 O 3 layer 11 and the uppermost layer 9 made of Ti (C 1-x N x ) (0 ≦ x ≦ 1) are sequentially stacked. As shown in the metal micrograph and scanning microscope (SEM) photograph of FIG. 3, the uppermost layer 9 on the flank 6 is pointed Ti (C 1-x N x ) upward from the surface of the coating layer 10. (0 ≦ x ≦ 1) crystal (hereinafter, sometimes referred to as the uppermost layer crystal) 16 is composed of agglomerated portions 17 and valleys 18 between the agglomerated portions 17. On the other hand, the surface roughness of the coating layer 10 on the rake face 5 is smaller than the surface roughness of the flank face 6.
これによって、逃げ面６に存在する最上層９がホルダ２の拘束面に食い込んで、インサート４がホルダ２に強固に拘束されるので、ホルダ２に対して良好な拘束力を有し、びびりの発生もなく、安定した切削が可能である。また、すくい面５においては、最上層９を構成する最上層結晶（図示せず）は、平頭形であり、被削材が溶着することを抑制して、切屑の流れがスムーズで、摩耗の進行が遅くなる。 As a result, the uppermost layer 9 existing on the flank 6 bites into the restraining surface of the holder 2, and the insert 4 is firmly restrained by the holder 2. There is no occurrence and stable cutting is possible. Further, on the rake face 5, the uppermost layer crystal (not shown) constituting the uppermost layer 9 has a flat head shape, suppresses the welding of the work material, the flow of chips is smooth, and the wear is reduced. Progress is slow.
本発明において、最上層結晶１６が前記被覆層の表面に対して上方に向かって尖形（以下、単に尖形という場合がある）であるかどうかを判断するには、まず、被覆層１０の断面写真から各結晶の上方側の形状をトレースし、図４の模式図に示すように、最も上方の位置を先端とし、先端における曲率半径Ｒと先端から下側に向かう尾根部の長いほうの直線長さＬとの比（曲率半径Ｒ／直線長さＬ）を算出する。この比（Ｒ／Ｌ）が０．３以下、かつ、前記結晶の頂角が１２０°以下の形状を尖形結晶と定義し、写真で観察される領域の全結晶のうちの尖形結晶の割合が５０％以上の場合に、最上層結晶１６が尖形という。尖形でない最上層結晶１６は平頭形と定義する。また、本発明における凝集部１７を確認するには、まず、被覆層１０を、粒径が１−３μｍのダイヤモンド砥粒を用いて磨いた表面状態を観察して確認する。具体例としては、粒度１−３μｍの市販品のダイヤモンド砥粒とオリーブオイルとを、２５質量％と７５質量％との割合で混ぜた砥粒液を作製する。そして、回転台の上に台紙を敷いて前記砥粒液を塗り、その上にインサート４の逃げ面６またはすくい面５を台紙に押し付けるように載せ、さらにその上に重さ３ｋｇの重しを載せてから回転台を回転させ、３０秒研磨する。この条件で磨いた被覆層１０の表面を顕
微鏡にて図５のような組織を観察する。このとき、前記磨き加工で平面となった部分を凝集部１７と定義する。谷部１８は、凝集部１７の間の部分を指す。
In the present invention, in order to determine whether or not the uppermost crystal 16 has a cusp shape (hereinafter sometimes simply referred to as a cusp) with respect to the surface of the coating layer, first, The upper shape of each crystal is traced from the cross-sectional photograph, and as shown in the schematic diagram of FIG. 4, the uppermost position is the tip, the radius of curvature R at the tip and the longer ridge portion from the tip to the lower side The ratio (curvature radius R / straight line length L) with the straight line length L is calculated. A shape having this ratio (R / L) of 0.3 or less and an apex angle of the crystal of 120 ° or less is defined as a pointed crystal, and the shape of the pointed crystal out of all the crystals in the region observed in the photograph is When the ratio is 50% or more, the top layer crystal 16 is called a pointed shape. The top layer crystal 16 that is not pointed is defined as a flat head. Moreover, in order to confirm the aggregation part 17 in this invention, first, the coating layer 10 is confirmed by observing the surface state which polished the diamond abrasive grain with a particle size of 1-3 micrometers. As a specific example, an abrasive liquid is prepared by mixing commercially available diamond abrasive grains having a particle size of 1 to 3 μm and olive oil at a ratio of 25 mass% and 75 mass%. Then, lay a mount on the rotating table and apply the abrasive liquid, place the flank 6 or rake surface 5 of the insert 4 on the mount so as to press it, and further put a weight of 3 kg on it. After loading, rotate the turntable and polish for 30 seconds. The structure as shown in FIG. 5 is observed with a microscope on the surface of the coating layer 10 polished under these conditions. At this time, the portion that has become flat by the polishing process is defined as agglomerated portion 17. The valley portion 18 indicates a portion between the aggregation portions 17.
本実施態様によれば、図１に示すように、インサート４をホルダ２に装着するために、ホルダ２にクランプ金具２１を設けている。そして、クランプ金具２１をねじ部材２２等の押圧手段により押圧して、インサート４をインサートポケット３の壁面３ａ側に引き込むようにクランプ金具２１を変位させている。この方法によって、逃げ面６の最上層９の尖形の最上層結晶１６の先端が、ホルダ２のインサートポケット３の側面に食い込んで装着されている。これによって、インサート４はホルダ２に対してより強固に拘束される。この形態であれば、インサート４をホルダ２から外したときに、インサートポケット３の側面の一部が剥ぎ取られて逃げ面６の最上層９の表面にホルダ２の成分が付着した状態となる。 According to this embodiment, as shown in FIG. 1, the clamp 2 is provided on the holder 2 in order to attach the insert 4 to the holder 2. Then, the clamp fitting 21 is pressed by a pressing means such as a screw member 22 to displace the clamp fitting 21 so as to draw the insert 4 toward the wall surface 3 a of the insert pocket 3. By this method, the tip of the pointed top layer crystal 16 of the top layer 9 of the flank 6 is fitted into the side surface of the insert pocket 3 of the holder 2. Thereby, the insert 4 is more firmly restrained with respect to the holder 2. In this form, when the insert 4 is removed from the holder 2, a part of the side surface of the insert pocket 3 is peeled off, and the component of the holder 2 is attached to the surface of the uppermost layer 9 of the flank 6. .
なお、図１によれば、ホルダ２のインサートポケット３にはシート部材２３がねじ部材２４によって装着されており、インサート４がシート部材２３上に載置されている。また、本実施態様では、インサート４をクランプ金具２１にてインサートポケット３の壁面３ａ側に引き込むようにして固定するものであったが、本発明はこれに限定されるものではなく、インサート４の中央に設けられた貫通孔２６内にネジ部材（図示せず）を挿入して、このネジ部材の先端をシート部材２３またはホルダ２に螺合して固定するものであってもよい。ホルダ２はインサート４の最上層９よりも低硬度の材質からなり、本実施態様では合金鋼または焼き入れ鋼からなる。 According to FIG. 1, the sheet member 23 is attached to the insert pocket 3 of the holder 2 by the screw member 24, and the insert 4 is placed on the sheet member 23. Further, in this embodiment, the insert 4 is fixed by being pulled to the wall surface 3a side of the insert pocket 3 by the clamp fitting 21, but the present invention is not limited to this. A screw member (not shown) may be inserted into the through-hole 26 provided in the center, and the tip of this screw member may be screwed and fixed to the sheet member 23 or the holder 2. The holder 2 is made of a material having a hardness lower than that of the uppermost layer 9 of the insert 4. In this embodiment, the holder 2 is made of alloy steel or hardened steel.
ここで、本実施態様では、逃げ面６において、凝集部１７を円に換算したときの平均直径が１〜１０μｍ、特に、２〜６μｍである。これによって、逃げ面６における最上層９がホルダ２の拘束面４に強固に固定される。また、凝集部１７と谷部１８との面積比（凝集部１７／谷部１８）は０．４以下、特に０．１〜０．３である。 Here, in this embodiment, the average diameter of the flank 6 when the agglomerated portion 17 is converted into a circle is 1 to 10 μm, particularly 2 to 6 μm. As a result, the uppermost layer 9 on the flank 6 is firmly fixed to the restraining surface 4 of the holder 2. Moreover, the area ratio (aggregation part 17 / valley part 18) of the aggregation part 17 and the trough part 18 is 0.4 or less, especially 0.1-0.3.
また、本実施態様によれば、すくい面５においては、最上層９が研磨されている。なお、本実施態様によれば、最上層９は残存しているが、最上層９が消失してその下層が露出していてもよい。 Further, according to this embodiment, the uppermost layer 9 is polished on the rake face 5. In addition, according to this embodiment, although the uppermost layer 9 remains, the uppermost layer 9 may lose | disappear and the lower layer may be exposed.
ここで、本実施態様によれば、最上層９の下層が複数層設けられている。Ａｌ２Ｏ３層１１はα型結晶構造のＡｌ２Ｏ３結晶からなり、かつ基体８の表面に対して垂直な方向から見た平均結晶幅が０．０５〜２μｍである。これによって、耐摩耗性が向上する。 Here, according to this embodiment, a plurality of lower layers of the uppermost layer 9 are provided. The Al 2 O 3 layer 11 is made of an Al 2 O 3 crystal having an α-type crystal structure, and has an average crystal width of 0.05 to 2 μm as viewed from a direction perpendicular to the surface of the substrate 8. This improves wear resistance.
また、Ａｌ２Ｏ３層１１の基体８側に形成される被覆層は、ＴｉＣ、ＴｉＮ、ＴｉＣＮ、ＴｉＣＮＯ、ＴｉＣＯ、ＴｉＮＯの群から選ばれる１層以上が好適に用いられ、耐摩耗性および耐欠損性が向上する。本実施態様によれば、具体的な構成として、基体８の直上には第１層としてＴｉＮ層１２が形成され、第２層としてＴｉＣＮ層（第２ＴｉＣＮ層と称す場合がある。）１３−１５が形成されている。ＴｉＣＮ層１３−１５としては、アセトニトリル（ＣＨ３ＣＮ）ガスを原料として含み成膜温度が７８０〜９００℃と比較的低温で成膜した柱状結晶からなる、いわゆるＭＴ−ＴｉＣＮ層１３，１４と、成膜温度が９５０〜１１００℃と高温で成膜した、いわゆるＨＴ−ＴｉＣＮ層１５とが順に成膜された構成であることが望ましい。さらに、ＭＴ−ＴｉＣＮ層１３，１４は、平均結晶幅が０．５μｍ未満と微細な微細柱状結晶からなる微細ＭＴ−ＴｉＣＮ層１３と、平均結晶幅が０．５〜２μｍと比較的大きい粗大柱状結晶からなる粗大ＭＴ−ＴｉＣＮ層１４との積層からなることが望ましい。これによって、その上層との密着力が高まり、被覆層１０の剥離やチッピングを抑えることができる。 In addition, as the coating layer formed on the base 8 side of the Al 2 O 3 layer 11, one or more layers selected from the group of TiC, TiN, TiCN, TiCNO, TiCO, and TiNO are preferably used. The deficiency is improved. According to this embodiment, as a specific configuration, a TiN layer 12 is formed as a first layer immediately above the substrate 8, and a TiCN layer (sometimes referred to as a second TiCN layer) 13-15 as a second layer. Is formed. As the TiCN layer 13-15, so-called MT-TiCN layers 13 and 14 composed of columnar crystals formed using a acetonitrile (CH 3 CN) gas as a raw material and formed at a relatively low film formation temperature of 780 to 900 ° C., It is desirable that the so-called HT-TiCN layer 15 formed at a high film formation temperature of 950 to 1100 ° C. is sequentially formed. Further, the MT-TiCN layers 13 and 14 include a fine MT-TiCN layer 13 made of fine fine columnar crystals having an average crystal width of less than 0.5 μm, and a coarse columnar shape having a relatively large average crystal width of 0.5 to 2 μm. It is desirable to be composed of a laminate with a coarse MT-TiCN layer 14 made of crystals. Thereby, the adhesive force with the upper layer increases, and peeling and chipping of the coating layer 10 can be suppressed.
なお、本発明において、被覆層１０を構成する結晶が粒状であるとは、被覆層１０を構
成する結晶の任意１０個について最長長さとそれに直交する長さとの比であるアスペクト比を各結晶ごとに求めて、その平均値が１．５未満のものを指す。このアスペクト比が１．５以上の場合には、被覆層１０を構成する結晶が柱状であるという。
In the present invention, the crystals constituting the coating layer 10 are granular, and the aspect ratio, which is the ratio of the longest length to the length orthogonal to the arbitrary length of 10 crystals constituting the coating layer 10, for each crystal. And the average value is less than 1.5. When the aspect ratio is 1.5 or more, it is said that the crystals constituting the coating layer 10 are columnar.
また、本実施態様によれば、ＨＴ−ＴｉＣＮ層１５とＡｌ２Ｏ３層１１との間には、ＴｉＣＮＯからなる厚み０．０５〜０．５μｍの中間層１９が設けられている。これによって、Ａｌ２Ｏ３層１１を構成する結晶を、平均粒径０．０５〜２μｍのα型結晶構造のＡｌ２Ｏ３結晶とすることができ、耐摩耗性を向上させることができる。 Further, according to this embodiment, the intermediate layer 19 made of TiCNO and having a thickness of 0.05 to 0.5 μm is provided between the HT-TiCN layer 15 and the Al 2 O 3 layer 11. Thus, the crystal constituting the the Al 2 O 3 layer 11, can be Al 2 O 3 crystals of the α-type crystal structure having an average particle diameter of 0.05 to 2 [mu] m, it is possible to improve the wear resistance.
なお、各層の厚みおよび各層を構成する結晶の性状は、インサート１の断面における電子顕微鏡写真（走査型電子顕微鏡（ＳＥＭ）写真または透過電子顕微鏡（ＴＥＭ）写真）を観察することにより、測定することが可能である。 The thickness of each layer and the properties of the crystals constituting each layer should be measured by observing an electron micrograph (scanning electron microscope (SEM) photograph or transmission electron microscope (TEM) photograph) in the cross section of the insert 1. Is possible.
一方、インサート１の基体８は、炭化タングステン（ＷＣ）と、所望により周期表第４、５、６族金属の炭化物、窒化物、炭窒化物の群から選ばれる少なくとも１種と、からなる硬質相を、コバルト（Ｃｏ）やニッケル（Ｎｉ）等の鉄属金属からなる結合相にて結合させた超硬合金やＴｉ基サーメット、またはＳｉ３Ｎ４、Ａｌ２Ｏ３、ダイヤモンド、立方晶窒化ホウ素（ｃＢＮ）等のセラミックスのいずれかが好適に使用できる。中でも、インサート４を切削工具として用いる場合には、基体８は、超硬合金またはサーメットからなることが耐欠損性および耐摩耗性の点で望ましい。また、用途によっては、基体８は炭素鋼、高速度鋼、合金鋼等の金属からなるものであっても良い。 On the other hand, the base 8 of the insert 1 is a hard material composed of tungsten carbide (WC) and, if desired, at least one selected from the group consisting of carbides, nitrides, and carbonitrides of Group 4, 5, and 6 metals of the periodic table. Cemented carbide, Ti-based cermet, or Si 3 N 4 , Al 2 O 3 , diamond, cubic nitridation in which phases are bonded with a binder phase composed of an iron group metal such as cobalt (Co) or nickel (Ni) Any ceramic such as boron (cBN) can be suitably used. In particular, when the insert 4 is used as a cutting tool, the base 8 is preferably made of cemented carbide or cermet in terms of fracture resistance and wear resistance. Further, depending on the application, the substrate 8 may be made of a metal such as carbon steel, high speed steel, or alloy steel.
（製造方法）
また、本実施形態のインサートの製造方法の一実施形態について説明する。
(Production method)
Moreover, one Embodiment of the manufacturing method of the insert of this embodiment is described.
まず、上述した硬質合金を焼成によって形成しうる金属炭化物、窒化物、炭窒化物、酸化物等の無機物粉末に、金属粉末、カーボン粉末等を適宜添加、混合し、プレス成形、鋳込成形、押出成形、冷間静水圧プレス成形等の公知の成形方法によって所定の工具形状に成形する。その後、得られた成形体を真空中または非酸化性雰囲気中にて焼成することによって上述した硬質合金からなる基体を作製する。そして、上記基体の表面に所望によって研磨加工や切刃部のホーニング加工を施す。 First, metal powder, carbon powder, etc. are appropriately added to and mixed with inorganic powders such as metal carbides, nitrides, carbonitrides, and oxides that can be formed by firing the hard alloy described above, press molding, cast molding, A predetermined tool shape is formed by a known forming method such as extrusion molding or cold isostatic pressing. Thereafter, the obtained molded body is fired in a vacuum or in a non-oxidizing atmosphere to produce a substrate made of the hard alloy described above. Then, polishing or honing of the cutting edge portion is performed on the surface of the base as desired.
次に、得られた基体８の表面に化学気相蒸着（ＣＶＤ）法によって被覆層を形成する。まず、基体の直上に第１層としてＴｉＮ層を形成する。ＴｉＮ層の成膜条件としては、混合ガス組成として四塩化チタン（ＴｉＣｌ４）ガスを０．５〜１０体積％、窒素（Ｎ２）ガスを１０〜６０体積％の割合で含み、残りが水素（Ｈ２）ガスからなる混合ガスを用い、成膜温度を８００〜９４０℃、圧力を８〜５０ｋＰａにて成膜される。 Next, a coating layer is formed on the surface of the obtained substrate 8 by chemical vapor deposition (CVD). First, a TiN layer is formed as a first layer directly on the substrate. The conditions for forming the TiN layer include, as a mixed gas composition, titanium tetrachloride (TiCl 4 ) gas in a ratio of 0.5 to 10% by volume and nitrogen (N 2 ) gas in a ratio of 10 to 60% by volume, with the remainder being hydrogen. Using a mixed gas composed of (H 2 ) gas, the film is formed at a film forming temperature of 800 to 940 ° C. and a pressure of 8 to 50 kPa.
次に、第２層としてＴｉＣＮ層を形成する。ここでは、ＴｉＣＮ層が、平均結晶幅が小さい微細柱状結晶層と、この層よりも平均結晶幅が大きい粗柱状結晶層とのＭＴ−ＴｉＣＮ層と、ＨＴ−ＴｉＣＮ層との３層にて構成する場合の成膜条件について説明する。 Next, a TiCN layer is formed as a second layer. Here, the TiCN layer is composed of three layers of an MT-TiCN layer of a fine columnar crystal layer having a small average crystal width, a coarse columnar crystal layer having a larger average crystal width than this layer, and an HT-TiCN layer. The film forming conditions for this will be described.
ＭＴ−ＴｉＣＮ層のうちの微細柱状結晶層の成膜条件は、四塩化チタン（ＴｉＣｌ４）ガスを０．５〜１０体積％、窒素（Ｎ２）ガスを１０〜６０体積％、アセトニトリル（ＣＨ３ＣＮ）ガスを０．１〜０．４体積％の割合で含み、残りが水素（Ｈ２）ガスからなる混合ガスを用い、成膜温度を７８０〜９００℃、圧力を５〜２５ｋＰａとする。ＭＴ−ＴｉＣＮ層のうちの粗柱状結晶層の成膜条件は、四塩化チタン（ＴｉＣｌ４）ガスを０．５〜４．０体積％、窒素（Ｎ２）ガスを５〜４０体積％、アセトニトリル（ＣＨ３ＣＮ）ガスを０．４〜２．０体積％の割合で含み、残りが水素（Ｈ２）ガスからなる混合ガスを用い、成膜温度を７８０〜９００℃、圧力を５〜２５ｋＰａとする。 The film formation conditions of the fine columnar crystal layer in the MT-TiCN layer are as follows: titanium tetrachloride (TiCl 4 ) gas is 0.5 to 10% by volume, nitrogen (N 2 ) gas is 10 to 60% by volume, acetonitrile (CH 3 CN) gas in a ratio of 0.1 to 0.4% by volume, and the remaining gas is a hydrogen (H 2 ) gas, the film forming temperature is 780 to 900 ° C., and the pressure is 5 to 25 kPa. . The film forming conditions of the coarse columnar crystal layer in the MT-TiCN layer are as follows: titanium tetrachloride (TiCl 4 ) gas is 0.5 to 4.0% by volume, nitrogen (N 2 ) gas is 5 to 40% by volume, acetonitrile (CH 3 CN) gas is contained at a ratio of 0.4 to 2.0% by volume, and the remaining gas is a hydrogen (H 2 ) gas mixed gas, the film forming temperature is 780 to 900 ° C., and the pressure is 5 to 25 kPa. And
ＨＴ−ＴｉＣＮ層の成膜条件は、四塩化チタン（ＴｉＣｌ４）ガスを０．１〜５体積％、メタン（ＣＨ４）ガスを０．１〜１０体積％、窒素（Ｎ２）ガスを５〜３０体積％の割合で含み、残りが水素（Ｈ２）ガスからなる混合ガスを用い、成膜温度を９５０〜１１００℃、圧力を５〜４０ｋＰａとして成膜する。 The film forming conditions of the HT-TiCN layer are as follows: titanium tetrachloride (TiCl 4 ) gas is 0.1 to 5% by volume, methane (CH 4 ) gas is 0.1 to 10% by volume, and nitrogen (N 2 ) gas is 5%. Film formation is performed at a film forming temperature of 950 to 1100 ° C. and a pressure of 5 to 40 kPa, using a mixed gas containing hydrogen (H 2 ) gas in a ratio of ˜30% by volume.
そして、チャンバ内を９５０〜１１００℃、５〜４０ｋＰａとし、四塩化チタン（ＴｉＣｌ４）ガスを１〜５体積％、メタン（ＣＨ４）ガスを４〜１０体積％、窒素（Ｎ２）ガスを１０〜３０体積％、一酸化炭素（ＣＯ）ガスを４〜８体積％、残りが水素（Ｈ２）ガスからなる混合ガスを調整してチャンバ内に１０〜６０分導入して成膜した後、続いて、成膜温度を９５０〜１１００℃、５〜４０ｋＰａにて、二酸化炭素（ＣＯ２）ガスを０．５〜１０体積％、残りが窒素（Ｎ２）ガスからなる混合ガスをチャンバ内に１０〜６０分導入することによって、中間層を成膜する。なお、このＣＯ２ガスを含む混合ガスを流す工程を経ることなく中間層を形成することもできるが、α型Ａｌ２Ｏ３層を構成する結晶を微細なものとするためには、ＣＯ２ガスを含む混合ガスを流す工程を経ることが望ましい。 The chamber is 950 to 1100 ° C. and 5 to 40 kPa, titanium tetrachloride (TiCl 4 ) gas is 1 to 5% by volume, methane (CH 4 ) gas is 4 to 10% by volume, and nitrogen (N 2 ) gas is After forming a film by adjusting a mixed gas consisting of 10 to 30% by volume, 4 to 8% by volume of carbon monoxide (CO) gas, and the remainder consisting of hydrogen (H 2 ) gas, and introducing it into the chamber for 10 to 60 minutes Subsequently, at a film forming temperature of 950 to 1100 ° C. and 5 to 40 kPa, a mixed gas consisting of 0.5 to 10% by volume of carbon dioxide (CO 2 ) gas and the balance of nitrogen (N 2 ) gas is placed in the chamber. Is introduced for 10 to 60 minutes to form an intermediate layer. Note that the intermediate layer can be formed without passing the mixed gas containing CO 2 gas, but in order to make the crystals constituting the α-type Al 2 O 3 layer fine, CO 2 It is desirable to go through a process of flowing a mixed gas containing gas.
そして、引き続き、Ａｌ２Ｏ３層を形成する。Ａｌ２Ｏ３層の成膜条件の一例としては、三塩化アルミニウム（ＡｌＣｌ３）ガスを０．５〜５．０体積％、塩化水素（ＨＣｌ）ガスを０．５〜３．５体積％、二酸化炭素（ＣＯ２）ガスを０．５〜５．０体積％、硫化水素（Ｈ２Ｓ）ガスを０〜０．５体積％、残りが水素（Ｈ２）ガスからなる混合ガスをチャンバ内に導入し、成膜温度を９５０〜１１００℃、圧力を５〜１０ｋＰａとして成膜する。 Subsequently, an Al 2 O 3 layer is formed. As an example of film formation conditions for the Al 2 O 3 layer, aluminum trichloride (AlCl 3 ) gas is 0.5 to 5.0% by volume, hydrogen chloride (HCl) gas is 0.5 to 3.5% by volume, A mixed gas consisting of 0.5 to 5.0% by volume of carbon dioxide (CO 2 ) gas, 0 to 0.5% by volume of hydrogen sulfide (H 2 S) gas, and the remaining hydrogen (H 2 ) gas is contained in the chamber. The film is formed at a film forming temperature of 950 to 1100 ° C. and a pressure of 5 to 10 kPa.
さらに、Ａｌ２Ｏ３層の上層に最表層を成膜する。成膜条件としては、四塩化チタン（ＴｉＣｌ４）ガスを１〜１０体積％、メタン（ＣＨ４）ガスを０〜１０体積％、窒素（Ｎ２）ガスを０〜６０体積％の割合で含み、残りが水素（Ｈ２）ガスからなる混合ガスをチャンバ内に導入し、成膜温度を９６０〜１１００℃、圧力を１０〜８５ｋＰａとして、成膜時間を１０〜６０分の間で成膜する。その後、チャンバ内を成膜温度よりも５０〜１００℃高い温度に上昇させて、１０〜３０分間保持する。この成膜条件によって、被覆層の表面に対して上方に向かって尖形の結晶が集合した凝集部と、該凝集部間の谷部からなるＴｉ（Ｃ１−ｘＮｘ）（０≦ｘ≦１）層となる。 Further, an outermost layer is formed on the Al 2 O 3 layer. Film formation conditions include titanium tetrachloride (TiCl 4 ) gas in a proportion of 1 to 10% by volume, methane (CH 4 ) gas in a proportion of 0 to 10% by volume, and nitrogen (N 2 ) gas in a proportion of 0 to 60% by volume. Then, a mixed gas consisting of the remaining hydrogen (H 2 ) gas is introduced into the chamber, the film formation temperature is set to 960 to 1100 ° C., the pressure is set to 10 to 85 kPa, and the film formation time is set to 10 to 60 minutes. . Thereafter, the inside of the chamber is raised to a temperature 50 to 100 ° C. higher than the film forming temperature and held for 10 to 30 minutes. Depending on the film forming conditions, Ti (C 1-x N x ) (0 ≦ x) composed of an agglomerated portion in which point-like crystals gather upward with respect to the surface of the coating layer and a valley between the agglomerated portions. ≦ 1) layer.
その後、すくい面における被覆層の表面を研磨して、すくい面における被覆層の表面粗さが逃げ面における被覆層の表面粗さよりも小さくなるように調整する。この研磨加工によって、すくい面に成膜された被覆層の表面の尖形の結晶は、先端が研磨されて平頭形の結晶となる。 Thereafter, the surface of the coating layer on the rake face is polished, and the surface roughness of the coating layer on the rake face is adjusted to be smaller than the surface roughness of the coating layer on the flank face. By this polishing process, the pointed crystals on the surface of the coating layer formed on the rake face are polished to form flat-headed crystals.
平均粒径１．５μｍの炭化タングステン（ＷＣ）粉末に対して、平均粒径１．２μｍの金属コバルト（Ｃｏ）粉末を６質量％の割合で添加、混合して、プレス成形により切削工具形状（ＣＮＭＧ１２０４１２）に成形した。得られた成形体について、脱バインダ処理を施し、０．５〜１００Ｐａの真空中、１４００℃で１時間焼成して超硬合金を作製した。さらに、作製した超硬合金に対して、ブラシ加工にてすくい面側について刃先処理（Ｒホーニング）を施した。 A metal cobalt (Co) powder with an average particle diameter of 1.2 μm is added to and mixed with tungsten carbide (WC) powder with an average particle diameter of 1.5 μm at a ratio of 6% by mass, and the cutting tool shape ( CNMG120412). The obtained compact was subjected to a binder removal treatment and fired at 1400 ° C. for 1 hour in a vacuum of 0.5 to 100 Pa to produce a cemented carbide. Furthermore, the cutting edge processing (R honing) was performed on the rake face side by brush processing on the manufactured cemented carbide.
そして、上記超硬合金をＣＶＤ装置内にセットし、以下の順序で被覆層を成膜した。まず、四塩化チタン（ＴｉＣｌ４）ガスを２．０体積％、窒素（Ｎ２）ガスを３３体積％、残りが水素（Ｈ２）ガスからなる混合ガスを用い、成膜温度を８８０℃、ガス圧を１６ｋＰａにてＴｉＮ層を成膜した。次に、四塩化チタン（ＴｉＣｌ４）ガスを２．５体積％、
窒素（Ｎ２）ガスを２５体積％、アセトニトリル（ＣＨ３ＣＮ）ガスを０．２体積％の割合で含み、残りが水素（Ｈ２）ガスからなる混合ガスを用い、成膜温度を８６５℃、圧力を１５ｋＰａとして、ＴｉＣＮ層の下側のＭＴ−ＴｉＣＮ層を成膜した。そして、四塩化チタン（ＴｉＣｌ４）ガスを２．５体積％、窒素（Ｎ２）ガスを２５体積％、アセトニトリル（ＣＨ３ＣＮ）ガスを０．５体積％の割合で含み、残りが水素（Ｈ２）ガスからなる混合ガスを用い、成膜温度を８６５℃、圧力を９ｋＰａとして、ＴｉＣＮ層の上側のＭＴ−ＴｉＣＮ層を成膜した。その後、四塩化チタン（ＴｉＣｌ４）ガスを３．５体積％、メタン（ＣＨ４）ガスを７体積％、窒素（Ｎ２）ガスを２５体積％の割合で含み、残りが水素（Ｈ２）ガスからなる混合ガスを用い、成膜温度を１０１０℃、圧力を２０ｋＰａとして、ＨＴ−ＴｉＣＮ層を成膜した。
Then, the cemented carbide was set in a CVD apparatus, and a coating layer was formed in the following order. First, using a mixed gas composed of 2.0% by volume of titanium tetrachloride (TiCl 4 ) gas, 33% by volume of nitrogen (N 2 ) gas, and the remainder of hydrogen (H 2 ) gas, the film forming temperature was 880 ° C. A TiN layer was formed at a gas pressure of 16 kPa. Next, 2.5% by volume of titanium tetrachloride (TiCl 4 ) gas,
Using a mixed gas containing 25% by volume of nitrogen (N 2 ) gas and 0.2% by volume of acetonitrile (CH 3 CN) gas, with the remainder being hydrogen (H 2 ) gas, the film forming temperature was 865 ° C. The MT-TiCN layer below the TiCN layer was formed at a pressure of 15 kPa. And it contains 2.5% by volume of titanium tetrachloride (TiCl 4 ) gas, 25% by volume of nitrogen (N 2 ) gas and 0.5% by volume of acetonitrile (CH 3 CN) gas, with the remainder being hydrogen ( An MT-TiCN layer on the upper side of the TiCN layer was formed at a film forming temperature of 865 ° C. and a pressure of 9 kPa using a mixed gas of H 2 ) gas. Then, titanium tetrachloride (TiCl 4 ) gas is contained in a volume of 3.5% by volume, methane (CH 4 ) gas is contained in 7% by volume, nitrogen (N 2 ) gas is contained in a proportion of 25% by volume, and the remainder is hydrogen (H 2 ) An HT-TiCN layer was formed at a film forming temperature of 1010 ° C. and a pressure of 20 kPa using a gas mixture.
そして、チャンバ内を１０００℃、３０ｋＰａとし、四塩化チタン（ＴｉＣｌ４）ガスを２体積％、メタン（ＣＨ４）ガスを８体積％、窒素（Ｎ２）ガスを２０体積％、一酸化炭素（ＣＯ）ガスを６体積％、残りが水素（Ｈ２）ガスからなる混合ガスを調整してチャンバ内に２０分導入して成膜した後、成膜温度を１０００℃、２０ｋＰａにて、二酸化炭素（ＣＯ２）ガスを５体積％、残りが窒素（Ｎ２）ガスからなる混合ガスをチャンバ内に２０分導入して、ＴｉＣＮＯからなる中間層を成膜した。 Then, the inside of the chamber is set to 1000 ° C. and 30 kPa, titanium tetrachloride (TiCl 4 ) gas is 2% by volume, methane (CH 4 ) gas is 8% by volume, nitrogen (N 2 ) gas is 20% by volume, carbon monoxide ( A mixed gas consisting of 6% by volume of CO) gas and the remaining hydrogen (H 2 ) gas was prepared and introduced into the chamber for 20 minutes to form a film, and then carbon dioxide was formed at a film formation temperature of 1000 ° C. and 20 kPa. A mixed gas composed of 5% by volume of (CO 2 ) gas and the remaining nitrogen (N 2 ) gas was introduced into the chamber for 20 minutes to form an intermediate layer composed of TiCNO.
次に、三塩化アルミニウム（ＡｌＣｌ３）ガスを１．５体積％、塩化水素（ＨＣｌ）ガスを２．０体積％、二酸化炭素（ＣＯ２）ガスを４．０体積％、硫化水素（Ｈ２Ｓ）ガスを０．３体積％、残りが水素（Ｈ２）ガスからなる混合ガスを用いて、成膜温度を１００５℃、圧力を９ｋＰａとして、Ａｌ２Ｏ３層を成膜した。 Next, aluminum trichloride (AlCl 3 ) gas is 1.5% by volume, hydrogen chloride (HCl) gas is 2.0% by volume, carbon dioxide (CO 2 ) gas is 4.0% by volume, hydrogen sulfide (H 2 S) An Al 2 O 3 layer was formed at a film forming temperature of 1005 ° C. and a pressure of 9 kPa using a mixed gas composed of 0.3% by volume of gas and the remaining hydrogen (H 2 ) gas.
その後、Ａｌ２Ｏ３層の上層に、各種の被覆層を表１に示す成膜条件、および表２に示す層構成にて成膜し、試料Ｎｏ．６を除く試料についてはすくい面を研磨加工してインサートを作製した。 Thereafter, various coating layers were formed on the Al 2 O 3 layer under the film formation conditions shown in Table 1 and the layer structure shown in Table 2. For the samples other than 6, inserts were prepared by polishing the rake face.
得られたインサートについて、回転台の上に台紙を敷いて、ダイヤモンド砥粒（トーメイダイヤ社製、品名：IRM、規格：０−３）とオリーブオイルとを、２５質量％と７５質
量％との割合で混ぜた砥粒液を塗り、その上にインサートの逃げ面またはすくい面を台紙に押し付けるように載せ、さらにその上に重さ３ｋｇの重しを載せてから回転台を回転させ、３０秒程度磨いた後、磨いた被覆層を金属顕微鏡および走査型電子顕微鏡で観察を行い、画像解析法にて、凝集部を円に換算した時の直径を算出した。また、被覆層の断面を走査型電子顕微鏡で観察し、最表層を構成する結晶が尖形か平頭形かを判定するとともに、最表層の厚みを確認した。なお、厚みは観察領域で確認できる厚みを被覆層表面の任意１０か所で測定し、その平均値とした。結果は表２に示した。
About the obtained insert, a mount is laid on a turntable, and diamond abrasive grains (product name: IRM, standard: 0-3) and olive oil are mixed with 25% by mass and 75% by mass. Apply the abrasive liquid mixed at a ratio, place the flank or rake face of the insert on the mount, and place a 3 kg weight on it, then rotate the turntable for 30 seconds. After polishing to some extent, the polished coating layer was observed with a metal microscope and a scanning electron microscope, and the diameter when the aggregated portion was converted into a circle was calculated by an image analysis method. Moreover, the cross section of the coating layer was observed with a scanning electron microscope to determine whether the crystals constituting the outermost layer were pointed or flat-headed, and the thickness of the outermost layer was confirmed. In addition, thickness measured the thickness which can be confirmed in an observation area | region in 10 arbitrary places on the surface of a coating layer, and made it the average value. The results are shown in Table 2.
また、すくい面および逃げ面における表面粗さを触針式の表面粗さ計で測定した。
次に、このインサートを用いて、図１の構成からなる切削工具に装着し、以下の切削条件にて切削試験を行った。なお、ホルダは、材質：SCM440 焼入れ（硬度：ＨＲＣ４５）を
用いた。結果は表３に示した。
切削方法：外形加工
被削材 ：Ｓ４５Ｃ（φ２００ 幅３０ｍｍ溝６本入り）
切削速度：２００ｍ／分
送り ：０．５ｍｍ／ｒｅｖ
切り込み：２．０ｍｍ
切削状態：乾式
評価方法：各試料１０個ずつ５分間切削を行った後、インサートの欠損の有無および欠損した位置を確認し、欠損が発生していたインサートの個数を評価した。また、切刃の状態を確認した。
The surface roughness on the rake face and flank face was measured with a stylus type surface roughness meter.
Next, using this insert, it was mounted on a cutting tool having the configuration of FIG. 1 and a cutting test was performed under the following cutting conditions. The holder used was material: SCM440 quenching (hardness: HRC45). The results are shown in Table 3.
Cutting method: Externally processed work material: S45C (φ200, 30 mm wide, 6 grooves)
Cutting speed: 200 m / min Feed: 0.5 mm / rev
Cutting depth: 2.0mm
Cutting state: Dry evaluation method: After cutting each sample for 10 minutes for 5 minutes, the presence or absence and the position of the defect of the insert were confirmed, and the number of inserts in which the defect occurred was evaluated. Moreover, the state of the cutting blade was confirmed.
表１〜３に示される結果から、逃げ面が尖形の結晶が集合した凝集部と谷部からなるＴｉ（Ｃ１−ｘＮｘ）（０≦ｘ≦１）層からなり、すくい面における被覆層の表面粗さが逃げ面における被覆層の表面粗さよりも小さい試料Ｎｏ．１〜４では、インサートの拘束力が強く、強断続切削を行なってもビビリやインサートの拘束力が緩むことがなく、インサートの欠損が発生しなかった。一方、本発明の範囲外である試料Ｎｏ．５〜８では、インサートの拘束力が不十分であったため、切刃、載置面および拘束面において欠損が発生し
てしまった。
From the results shown in Tables 1 to 3, the flank is composed of a Ti (C 1-x N x ) (0 ≦ x ≦ 1) layer composed of agglomerated portions and valleys in which sharp crystals are gathered. Sample No. 2 in which the surface roughness of the coating layer is smaller than the surface roughness of the coating layer on the flank face. In Nos. 1 to 4, the insert restraining force was strong, and even when hard interrupted cutting was performed, the chatter and insert restraining force did not loosen, and the insert was not damaged. On the other hand, Sample No. which is outside the scope of the present invention. In 5-8, since the restraint force of insert was insufficient, the chip | tip generate | occur | produced in the cutting blade, the mounting surface, and the restraint surface.
４ 切削インサート（インサート）
９ 最上層
１１ Ａｌ２Ｏ３層
１６ 尖形のＴｉ（Ｃ１−ｘＮｘ）（０≦ｘ≦１）結晶
１７ 凝集部
１８ 谷部
4 Cutting insert (insert)
9 Top layer 11 Al 2 O 3 layer 16 Pointed Ti (C 1-x N x ) (0 ≦ x ≦ 1) crystal 17 Aggregation portion 18 Valley portion
Claims (6)
前記被覆層は、前記逃げ面に位置するＴｉ（Ｃ １−ｘ Ｎ ｘ ）（０≦ｘ≦１）層を有し、
該Ｔｉ（Ｃ １−ｘ Ｎ ｘ ）層の表面が、上方に向かって複数の尖形結晶が集合した凝集部と、該凝集部間に位置して前記凝集部を囲む谷部とを有し、
前記すくい面における前記被覆層の表面粗さが、前記逃げ面における前記被覆層の表面粗さよりも小さい切削インサート。 Includes a substrate and a coating layer provided on a surface of the substrate, a cutting insert having a rake face and flank face,
The covering layer has a Ti (C 1-x N x ) (0 ≦ x ≦ 1) layer located on the flank face ,
The surface of the Ti (C 1-x N x ) layer, and a cohesive unit that sets a plurality of cusps Katachiyui crystal is upward direction, the valleys surrounding the agglomeration section is located between the aggregated portion Have
The surface roughness of the coating layer on the rake face is smaller cutting insert than the surface roughness of the covering layer in the flank.
前記インサートポケットに位置する、請求項１乃至３のいずれか記載の切削インサートとを備えた切削工具。 A holder having an insert pocket on the tip side;
The cutting tool provided with the cutting insert in any one of Claims 1 thru | or 3 located in the said insert pocket .
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