JP6091393B2 - Semiconductor device - Google Patents

Description

  The present invention relates to a semiconductor device such as an IPM (Intelligent Power Module), and more particularly to a semiconductor device whose device type can be identified.

  Semiconductor devices such as power modules, which are power semiconductor devices, are mass-produced in small quantities and various types, and there are many types with different internal circuit configurations even if the package is the same. For this reason, an electronic component that is different from the final specification is completed due to a mounting mistake in one electronic component. Therefore, it is checked whether there is a component error before assembly.

  In such a small quantity, high-mix production semiconductor device, a product identification (discrimination) technique is indispensable, and it is necessary to detect a defect in the process when erroneous mounting occurs. Therefore, as a prior art, a semiconductor device is used which has a dummy resistor irrelevant to a circuit having a preset resistance value mounted on a thick film substrate and determines the product type by measuring the resistance value of the dummy resistor. Has been. An example of such a semiconductor device is a semiconductor device disclosed in Patent Document 1.

Japanese Patent Laid-Open No. 1-143979

  However, in the semiconductor device related to the conventional technique described in Patent Document 1, it is necessary to provide at least one external connection terminal in order to enable measurement of the resistance value of the dummy resistor irrelevant to the circuit from the outside. Therefore, an external terminal that is not involved in product operation is provided. As a result, there has been a problem that miniaturization of the semiconductor device at the completion stage is hindered.

  The present invention has been made to solve the above-described problems, and an object thereof is to obtain a semiconductor device capable of discriminating a product type from the outside without providing an extra external terminal.

According to a first aspect of the present invention, there is provided a semiconductor device comprising: a switching unit having a semiconductor element that performs a switching operation; and a control unit that controls the operation of the semiconductor element, the power supply voltage being applied to the control unit. A first external power supply terminal; a second external power supply terminal to which a reference potential is set; an external detection terminal; and the power supply voltage applied from the first external power supply terminal as an operating voltage; An abnormality detection circuit having an abnormality output circuit that outputs an abnormality output signal that indicates an abnormal state from the external detection terminal and that electrically opens the external detection terminal when not in an abnormal state; The output circuit includes a determination element that is interposed between one of the first and second external power supply terminals and the external detection terminal and has an electrical characteristic value. for The child is provided in a connection form in which the electrical characteristic value or the characteristic value for determination which is a value determined by the electrical characteristic value is recognized by the measurement method using the power supply terminal for determination and the external detection terminal. It is characterized by being able to.

  The abnormality output circuit in the semiconductor device of the present invention according to claim 1 includes a determination element having the above-mentioned characteristics inside, thereby enabling a measurement method using a determination power supply terminal and an external detection terminal at the completion stage of the device, The characteristic value for discrimination can be recognized.

  Therefore, by setting the electrical characteristic value of the discrimination element so as to obtain the discrimination characteristic value in association with the type of semiconductor device, the type of the semiconductor device can be accurately discriminated by the measurement method. Can do. At this time, since the discrimination power supply terminal and the external detection terminal are indispensable terminals for the abnormality detection circuit, it is not necessary to add a new external terminal for the discrimination element.

  As a result, a semiconductor device with a reduced product size can be obtained by reliably avoiding the complication of the device configuration accompanying the increase in the number of external terminals.

It is a circuit diagram which shows the FO output circuit in IPM which is Embodiment 1 of this invention, and its periphery. It is a block diagram which shows typically the whole structure of IPM. It is a circuit diagram which shows the FO output circuit in IPM which is Embodiment 2 of this invention, and its periphery. It is a circuit diagram which shows the FO output circuit in IPM which is Embodiment 3 of this invention, and its periphery. It is a circuit diagram which shows the FO output circuit in IPM which is Embodiment 4 of this invention, and its periphery. It is a circuit diagram which shows the circuit structure of the conventional FO output circuit provided in the protection circuit of a general IPM.

<Embodiment 1>
FIG. 1 is a circuit diagram showing an FO (False Out) output circuit and its periphery in an IPM according to Embodiment 1 of the present invention. FIG. 2 is a block diagram schematically showing the overall configuration of the IPM.

  As shown in FIG. 2, the IPM 1 includes a control unit 2 and a power switching unit 10. The power switching unit 10 includes an IGBT 6 that is a semiconductor element (power switching element) that performs a switching operation and a free wheel diode D1.

  A freewheel diode D1 is connected in antiparallel between the main terminals of the IGBT6. That is, the anode of the free wheel diode D1 is connected to the emitter of the IGBT 6, and the cathode of the free wheel diode D1 is connected to the collector of the IGBT 6. The collector of the IGBT 6 is connected to the external power section collector terminal P21, and the emitter is connected to the power section emitter terminal P22.

  On the other hand, the control unit 2 includes a control circuit 3, a protection circuit 4, a drive circuit 5, and a gate resistor R1 as main components, and the protection circuit 4 that is an abnormality detection circuit is an FO that is a feature of the present invention. An output circuit 40 (generic name for the FO output circuits 41 to 44) is provided inside. That is, in the first embodiment, the FO output circuit 41 shown in FIG. 1 is provided as the FO output circuit 40 provided in the protection circuit 4 of FIG.

  A power supply voltage VD and a ground potential GND (reference potential) are applied to the control circuit 3, the protection circuit 4, and the drive circuit 5 through external terminals P11 and P14 (first and second external power supply terminals). Each of the circuits 3 to 5 operates by receiving the power supply voltage VD as an operating voltage. The external terminal P14 and the power unit emitter terminal P22 are electrically connected.

  The control circuit 3 outputs a control signal S3 to the drive circuit 5 based on the input voltage IN received via the external terminal P12 and the protection circuit output signal EN received from the protection circuit 4.

  The drive circuit 5 applies a drive signal S5 for driving (conducting or blocking) the IGBT 6 to the gate electrode of the IGBT 6 in the power switching unit 10 via the gate resistor R1 based on the control signal S3. The drive signal S5 is a signal that has been subjected to power amplification sufficient to operate the power switching unit 10 (IGBT 6). The resistance value of the gate resistor R1 is appropriately adjusted and selected in order to adjust the switching speed of the IGBT 6 in accordance with the rating and specifications of the IGBT 6 that is a power switching element.

  The protection circuit 4 which is an abnormality detection circuit receives detection signals S41 to S43 instructing the presence or absence of abnormality detection of the IPM1 (mainly IGBT 6), and detects the presence or absence of an abnormal state (error state) of the IPM1 based on the detection signals S41 to S43. When the abnormal state is detected, the protection circuit output signal EN of “H” (power supply voltage VD level) indicating the abnormal state and the abnormal output signal FO of “L” (ground level) are output.

  The protection circuit output signal EN is output to the internal control circuit 3, and the abnormal output signal FO is output to the outside via the external terminal P13. When the protection circuit 4 does not detect an abnormal state, the protection circuit 4 outputs a protection circuit output signal EN of “L” and makes the external terminal P13 open (floating).

  Hereinafter, the detection signals S41 to S43 will be described in detail. The detection signals S41 to S43 are all set to “L” at the normal time when no abnormal state is detected.

  The temperature detection signal S41 is a detection signal for heating protection (OT: Over Temperature protection), and when the temperature detected by a temperature detection circuit (not shown) mounted in the vicinity of the IGBT 6 of the IPM 1 exceeds a set value. “H” state.

  The current detection signal S42 is a detection signal for short circuit protection (SC), and is in an “H” state when a current exceeding a set value flows through the IGBT 6 due to a load short circuit or the like.

  The power supply detection signal S43 is a detection signal for the control power supply voltage drop protection (UV: Under Voltage), and the power supply voltage VD applied to the control unit 2 (more precisely, the potential difference between the power supply voltage VD and the ground potential GND) is set. When the value falls below the value, the state becomes “H”.

  The protection circuit 4 outputs a protection circuit output signal EN of “H” when at least one of the detection signals S41 to S43 is in the “H” state. Upon receiving the “H” protection circuit output signal EN, the control circuit 3 applies the control signal S3 for turning off the IGBT 6 to the drive circuit 5, thereby forcibly turning off the IGBT 6 from the drive circuit 5 (cut-off state). The drive signal S5 to be output can be output, and the IGBT 6 can be turned off.

  In this way, the protection circuit 4 inputs information on the operating environment in the IPM 1 as the detection signals S41 to S43, and when abnormality is detected by the detection signals S41 to S43, the IGBT 6 is forcibly turned off. The “H” protection circuit output signal EN is output to the control circuit 3 and the “L” abnormal output signal FO for notifying the abnormal state of the IPM 1 is output to the outside via the external terminal P13. As described above, the main protection function by the protection circuit 4 includes an abnormality detection function for the purpose of heating protection (OT), short circuit protection (SC), and control power supply voltage drop protection (UV).

  Returning to FIG. 1, the FO output circuit 41 of the first embodiment (formed as the FO output circuit 40 in the IPM 1 of FIG. 2) will be described.

  The FO output circuit 41 provided in the protection circuit 4 includes an FO detection (bipolar) transistor Q2, an FO resistor R2, and a (model) discrimination resistor R11.

  An FO resistor R2 and an FO detection transistor Q2 are inserted in series between the external terminals P13 and P14. That is, one end of the FO resistor R2 is connected to the external terminal P13, the other end is connected to the collector of the FO detection transistor Q2, and the emitter of the FO detection transistor Q2 is connected to the external terminal P14. The resistance value of the FO resistor R2 is set to about several kΩ.

  Further, a determination resistor R11 is interposed between the external terminals P13 and P14 in parallel with the FO resistor R2 and the FO detection transistor Q2. In addition, the external terminal P11 to which the power supply voltage VD is applied is supplied as an operation power supply for various ICs constituting the FO output circuit 49.

  The FO detection transistor Q2 receives the switching control signal S40 at its base. The switching control signal S40 turns on the FO detection transistor Q2 when at least one of the detection signals S41 to S43 described above is in the “H” state, and the detection signals S41 to S43 are all in the “L” state. A control signal for turning off the FO detection transistor Q2 at a normal time, for example, a mode in which the protection circuit output signal EN is used as the switching control signal S40 is conceivable.

  On the other hand, the photocoupler 30 includes a light emitting diode D30 and a phototransistor Q30. When the light emitting diode D30 emits light with an intensity equal to or higher than a reference value, the phototransistor Q30 is turned on. The on / off state of the phototransistor Q30 can be recognized from the terminals P31 and P32.

  The external terminal P13 of the FO output circuit 41 is an open collector (a configuration in which the FO detection transistor Q2 is connected to the ground potential GND when the FO detection transistor Q2 is on and is open (floating) when the FO detection transistor Q2 is off). As shown in FIG. 1, the photocoupler 30 is electrically connected.

  The FO output circuit 41 configured as described above is configured so that the FO detection transistor Q2 is turned on by the switching control signal S40 when at least one of the detection signals S41 to S43 is in the “H” state. P13 and the external terminal P14 are electrically connected through the FO resistor R2 and the FO detection transistor Q2. As a result, the external terminal P13 (abnormal output signal FO thereof) is set to “L”, and a potential difference capable of light emission is generated between the anode and the cathode, so that the light emitting diode D30 emits light with an intensity higher than the reference value. As described above, the abnormal output signal FO functions as a signal for instructing an abnormal state of the IPM 1 (mainly IGBT 6).

  The external terminal P13, which is an external detection terminal that outputs an abnormal output signal FO, sends information ("L" abnormal output signal FO) that stopped driving the IGBT 6 when an IPM1 abnormality is detected to an external circuit such as a host microcomputer. It is provided for the purpose of communication, and is an indispensable external terminal when the protection circuit 4 is provided.

  As described above, the resistance value of the gate resistor R1 is set for each specification of the IPM1, but if a defective IPM1 is manufactured by erroneously mounting the gate resistor R1 having a resistance value different from the specification, in the final inspection stage It is difficult to reject (remove) a defective IPM 1.

  This is because the resistance value of the gate resistor R1 cannot be measured from the outside after the device is completed. If the resistance value of the gate resistor R1 is significantly different depending on the type of IPM1, the switching time of the IGBT 6 changes greatly. Therefore, it is possible to reject the final inspection process after completion of the device by measuring the switching time. It is. However, when the resistance value of the gate resistance R1 is about several Ω, the difference cannot be detected from the outside, so that the defective IPM1 cannot be rejected as described above.

  As shown in FIG. 1, the FO output circuit 41 according to the first embodiment discriminates between an external terminal P13 that is an abnormal output signal FO terminal and an external terminal P14 that is an external power supply terminal for setting a ground potential GND. A resistor R11 is inserted.

  By associating the resistance value of the discrimination resistor R11 (electrical characteristic value and discrimination characteristic value) with the resistance value of the gate resistor R1 in a predetermined relationship, the resistance value of the discrimination resistor R11 is used to determine the type of IPM1 ( The resistance value of the gate resistor R1 can be determined.

  Therefore, by measuring the resistance value of the discrimination resistor R11 by the measurement method using the external terminals P13 and P14 at the time of the final inspection described above to determine the resistance value of the gate resistor R1, the IPM1 due to erroneous mounting of the gate resistor R1. It is possible to easily detect the presence or absence of defects.

(Setting example of resistance value of discrimination resistor R11)
The resistance value of the discrimination resistor R11 is set so that the path current (IFO (when the abnormal output signal FO is not output)) flowing through the external terminal P13 is less than the product standard value.

  For example, consider a case where the IFO (when FO is not output) max value which is a product standard value is 0.1 mA. The IFOmax value satisfies the condition (1) “the light emitting diode D30 of the photocoupler 30 does not emit light” or the condition (2) “the phototransistor Q30 does not turn on even when the light emitting diode D30 emits light”. Means the maximum value of the forward current flowing through the light emitting diode D30.

  When the IFOmax value is 0.1 mA, assuming that the power supply voltage VD is 15 V and the voltage drop VF due to the light emitting diode D30 on the photocoupler 30 side is 1.5 V, the discrimination resistor R11 is expressed by the following equation (1). The minimum resistance value Rmin = 135 [kΩ].

0.1 [mA] = (15-1.5) [V] / Rmin [kΩ]… (1)
Therefore, for example, a product (IPM1) having a resistance value 100 [Ω] of the gate resistor R1 is associated with a resistance value 150 [kΩ] of the discrimination resistor R11 which is a discrimination characteristic value, and further, the resistance of the gate resistor R1 A product having a value of 150 [Ω] is associated with a resistance value 180 [kΩ] of the discrimination resistor R11, and a resistance value of the plurality of types of gate resistors R1 and a resistance value of the plurality of types of discrimination resistors R11. Correspondence (hereinafter may be abbreviated as “correspondence between the gate resistance R1 and the discrimination resistor R11”) may be performed. As a result, the resistance value of the gate resistor R1, that is, the plurality of types of products of the IPM 1, can be determined from the resistance value of the determination resistor R11.

  When the gate resistor R1 and the discrimination resistor R11 are associated with each other, it is necessary to set the resistance values of a plurality of types of discrimination resistors R11 in consideration of the tolerance of the discrimination resistor R11 (manufacturing error). It is. Specifically, it is necessary to set so that the minimum value of the difference values between the resistance values of the plurality of types of discrimination resistors R11 sufficiently exceeds the tolerance. In addition, it is necessary to note that the minimum resistance value Rmin of the discrimination resistor R11 varies depending on the IFOmax value as described above.

(Effects etc.)
The FO output circuit 41 provided in the protection circuit 4 of the control unit 2 in the IPM 1 according to the first embodiment includes a discrimination resistor R11 having a resistance value as an impedance component as a discrimination element.

  For this reason, when the IPM 1 is completed, the external terminal P14, which is an external power supply terminal set to the ground potential GND, is used as a discrimination power supply terminal, and between the discrimination power supply terminal and the external terminal P13, which is an external detection terminal. The resistance value of the discrimination resistor R11 that is the discrimination characteristic value can be recognized by a relatively simple measurement method such as supplying a constant current to the external terminal P14 and measuring the voltage between the external terminals P13 and P14. That is, the discrimination resistor R11 is provided in the FO output circuit 41 in a connection form in which the resistance value is recognized as the discrimination characteristic value by the measurement method using the external terminals P13 and P14.

  Therefore, by performing the above-described correspondence between the gate resistance R1 and the discrimination resistor R11, the type of the IPM 1 can be accurately discriminated from the outside by a relatively simple operation using the measurement method or the like.

  FIG. 6 is a circuit diagram showing a circuit configuration of a conventional FO output circuit 49 provided in a general IPM protection circuit.

  As shown in the figure, the FO output circuit 49 includes the FO detection transistor Q2 and the FO resistor R2. However, unlike the FO output circuit 41 of the first embodiment, the FO output circuit 49 does not have the discrimination resistor R11.

  Similar to the FO output circuit 41, the FO output circuit 49 includes an FO resistor R2 and an FO detection transistor Q2 interposed in series between the external terminals P13 and P14. In addition, the external terminal P11 to which the power supply voltage VD is applied is supplied as an operation power supply for various ICs constituting the FO output circuit 49. Other configurations are the same as those of the FO output circuit 41 shown in FIG.

  Thus, at least the external terminals P11, P13, and P14 are necessary external terminals even in the conventional FO output circuit 49 provided in a general IPM protection circuit.

  As described above, since the external terminal P13 and the external terminal P14 are indispensable external terminals for the IPM having the protection circuit 4 (corresponding circuit), it is necessary to add a new external terminal for the discrimination resistor R11. Absent.

  As a result, it is possible to obtain the IPM 1 having the FO output circuit 41 in which the size of the product is reduced by reliably avoiding the complication of the device configuration accompanying the increase in the number of external terminals.

  That is, by measuring the resistance value of the discrimination resistor R11 using the external terminals P13 and P14 already provided in the conventional configuration employing the FO output circuit 49 shown in FIG. It is possible to discriminate various types of IPM1 from the outside without performing downsizing inhibition, and it is possible to reject a defective IPM1 recognized as an erroneously mounted product in the final inspection process. As a result, the yield of the final product in the IPM 1 can be improved.

  Further, a discrimination resistor R11 is provided between an external terminal P14 (discrimination power supply terminal) that is an external power supply terminal to which the ground potential GND is applied and an external terminal P13 (external detection terminal) that is normally open. Therefore, the main total loss of power during the normal operation of the IPM 1 is not affected.

<Embodiment 2>
FIG. 3 is a circuit diagram showing the FO output circuit 42 and its periphery in the IPM according to the second embodiment of the present invention. The overall configuration of the IPM 1 is the same as that shown in FIG. 2. In the second embodiment, the FO output circuit 42 shown in FIG. 3 is provided as the FO output circuit 40 provided in the protection circuit 4 of FIG. is there.

  As shown in FIG. 3, a (model) discrimination capacitor C11 is provided as a discrimination element between the external terminals P13 and P14. The FO output circuit 42 according to the second embodiment has the same configuration as that of the FO output circuit 41 shown in FIG. 1 except that the discrimination capacitor C11 described above is provided instead of the discrimination resistor R11. The same reference numerals are given and the description is omitted.

  As shown in FIG. 3, the FO output circuit 42 of the second embodiment includes an external terminal P13 (external terminal for detection) that is an abnormal output signal FO terminal and an external terminal P14 (external terminal P14 that is a power supply terminal for setting the ground potential GND). A discrimination capacitor C11 is interposed between the discriminating power supply terminal).

  The capacitance value (electrical characteristic value and determination characteristic value) of the determination capacitor C11 can be associated with the resistance value of the gate resistor R1 in a predetermined relationship. That is, the correspondence between the resistance values of the plurality of types of gate resistors R1 and the capacitance values of the plurality of types of discrimination capacitors C11 (hereinafter, may be abbreviated as “correspondence between the gate resistance R1 and the discrimination capacitor C11”). It can be performed.

  By associating the gate resistor R1 with the determination capacitor C11, the type of IPM1 (resistance value of the gate resistor R1) can be determined from the capacitance value of the determination capacitor C11.

  Therefore, by measuring the capacitance value of the discrimination capacitor C11 by the measurement method using the external terminals P13 and P14 at the final inspection and discriminating the resistance value of the gate resistor R1, the IPM1 due to erroneous mounting of the gate resistor R1. It is possible to easily detect the presence or absence of defects.

(Effects etc.)
The FO output circuit 42 provided in the protection circuit 4 of the control unit 2 in the IPM 1 according to the second embodiment includes a discrimination capacitor C11 having a capacitance value as an impedance component as a discrimination element.

  Therefore, when the IPM 1 is completed, the external terminal P14, which is an external power supply terminal to which the ground potential GND is set, is used as a discrimination power supply terminal, and between the discrimination power supply terminal and the external terminal P13, which is an external detection terminal. The capacitance value of the discrimination capacitor C11 can be recognized by a relatively simple measurement method such as supplying a constant current to the capacitor and measuring the time for the voltage between the external terminals P13 and P14 to reach a constant voltage.

  Hereinafter, a measurement method (first and second measurement methods) of the capacitance value of the discrimination capacitor C11 using the external terminals P13 and P14 will be described.

  The first measurement method is “Connect an RC oscillation circuit with a fixed resistance value R to the external terminals P13 and P14 to measure the oscillation frequency F, and F, R (fixed resistance value), C (capacitance value). The electrostatic capacitance value C of the discrimination capacitor C11 is calculated based on the relational expression ”.

  The second measuring method is “the capacitance value of the discrimination capacitor C11 by measuring the time (charge time t) until the constant voltage V1 can be applied when the constant current I is passed between the external terminals P13 and P14. C is calculated ". Specifically, the capacitance value C of the discrimination capacitor C11 can be calculated using the following formula (2).

Constant current I (A) x charging time t (s) = constant voltage V1 (V) x capacitance value C (F) (2)
Therefore, after the above-described association between the gate resistor R1 and the discrimination capacitor C11 is performed in advance, the type of the IPM 1 is accurately discriminated from the outside by executing the measurement method (first and second measurement methods). Can do.

  Further, since the external terminal P13 and the external terminal P14 are indispensable external terminals for the IPM having the protection circuit 4, the product can be obtained without adding a new external terminal for the discrimination capacitor C11 as in the first embodiment. As a result, the IPM 1 having the FO output circuit 42 can be obtained.

  In addition, in the FO output circuit 42 of the second embodiment, since only the discrimination capacitor C11 is inserted between the external terminals P13 and P14, the leakage current flowing between the external terminals P13 and P14 during the operation of the IPM1 increases. Never do.

<Embodiment 3>
FIG. 4 is a circuit diagram showing the FO output circuit 43 and its periphery in the IPM according to the third embodiment of the present invention. The overall configuration of the IPM 1 is the same as that shown in FIG. 2. In the third embodiment, the FO output circuit 43 shown in FIG. 4 is provided as the FO output circuit 40 provided in the protection circuit 4 of FIG. is there.

  As shown in FIG. 4, between the external terminals P13 and P14, a (model) discrimination resistor R12 and a (model) discrimination capacitor C12 are provided in parallel as discrimination elements. The FO output circuit 43 of the third embodiment is the same as the FO output circuit 41 shown in FIG. 1 except that the discrimination resistor R12 and the discrimination capacitor C12 are provided in parallel instead of the discrimination resistor R11. Therefore, the same reference numerals are given as appropriate, and description thereof is omitted.

  As shown in FIG. 4, the FO output circuit 43 of the third embodiment includes an external terminal P13 (detection external terminal) that is an abnormal output signal FO terminal and an external terminal P14 (a power supply terminal for setting the ground potential GND). A discrimination resistor R12 and a discrimination capacitor C12 are interposed in parallel with the discrimination power supply terminal.

  The discrimination resistor R12 and the discrimination capacitor C12 have a resistance value and a capacitance value as electrical characteristic values. Therefore, the combination of the resistance value and the capacitance value (characteristic value for discrimination) and the resistance value of the gate resistor R1 can be associated with each other in a predetermined relationship. That is, the correspondence between the resistance values of the plurality of types of gate resistors R1 and the combinations of the resistance values of the plurality of types of discrimination resistors R12 and the capacitance values of the discrimination capacitors C12 (hereinafter referred to as “gate resistance R1, characteristic value”). Abbreviated as “association between combinations”).

  By associating the gate resistance R1 and the characteristic value combination, the type of IPM1 (resistance value of the gate resistor R1) can be determined from the combination of the resistance value of the determination resistor R12 and the capacitance value of the determination capacitor C12. .

  Therefore, the resistance value of the discrimination resistor R12 and the capacitance value of the discrimination capacitor C12 are measured by the measurement method using the external terminals P13 and P14 at the final inspection, and the combination of the measured resistance value and capacitance value is determined. By determining the resistance value of the gate resistor R1, it is possible to easily detect whether or not the IPM 1 is defective due to erroneous mounting of the gate resistor R1.

(Effects etc.)
The FO output circuit 43 provided in the protection circuit 4 of the control unit 2 in the IPM 1 according to the third embodiment uses a discrimination resistor R12 and a discrimination capacitor C12 having a resistance value and a capacitance value as electrical characteristic values for discrimination. It is provided inside as an element.

  Therefore, in the completion stage of the IPM 1, the combination of the resistance value of the discrimination resistor R12 and the capacitance value of the discrimination capacitor C12 is determined by the measurement method using the external terminals P13 and P14 described in detail later. Can be recognized as.

  Hereinafter, a method for measuring the resistance value of the discrimination resistor R12 and the capacitance value of the discrimination capacitor C12 using the external terminals P13 and P14 will be described. The following steps (a) to (c) are executed as the measurement method of the third embodiment.

  Step (a): After the discrimination capacitor C12 is fully charged by applying a DC voltage between the external terminals P13 and P14 so that no current flows through the discrimination capacitor C12, the voltage is determined between the external terminals P13 and P14. The resistance value r12 of the discrimination resistor R12 is measured by supplying a current and measuring the voltage between the external terminals P13 and P14.

  Step (b): Discharging the discrimination capacitor C12 after full charge and observing the voltage change between the external terminals P13 and P14, thereby determining the resistance value r12 of the discrimination resistor R12 and the capacitance of the discrimination capacitor C12. The RC time constant τ12 determined by the value c12 is measured.

  Step (c): The capacitance value c12 of the discrimination capacitor C12 is calculated from the resistance value r12 obtained in step (a) and the RC time constant t12 obtained in step (b).

  Therefore, after the above-described association between the gate resistance R1 and the characteristic value combination, the type of the IPM 1 can be accurately determined from the outside by the above-described measurement method using the external terminals P13 and P14.

  Further, in the FO output circuit 43 according to the third embodiment, as a determination characteristic value associated with the resistance value of the gate resistor R1, a combination of the resistance value of the determination resistor R12 and the capacitance value of the determination capacitor C12 (characteristic) By using the value combination), the total number that can be associated with the type of IPM 1 can be increased more than that of the FO output circuit 41 and the FO output circuit 42 of the first and second embodiments, and the corresponding variation can be increased. Play.

  Since the external terminal P13 and the external terminal P14 are indispensable external terminals for the IPM having the protection circuit 4, as in the first and second embodiments, a new one is used for the discrimination resistor R12 and the discrimination capacitor C12. Thus, it is possible to obtain the IPM 1 having the FO output circuit 43 in which the size of the product is reduced without adding an external terminal.

  Furthermore, by inserting a discrimination resistor R12 between the external terminal P14, which is an external power supply terminal to which the ground potential GND is applied, and the external terminal P13, the main total loss of power during the normal operation of the IPM 1 is affected. Never give.

<Embodiment 4>
FIG. 5 is a circuit diagram showing the FO output circuit 44 and its peripheral circuits in the IPM according to the fourth embodiment of the present invention. The overall configuration of the IPM 1 is the same as that shown in FIG. 2. In the fourth embodiment, the FO output circuit 44 shown in FIG. 5 is provided as the FO output circuit 40 provided in the protection circuit 4 of FIG. is there.

  As shown in FIG. 5, a distinguishing resistor R13 and a distinguishing capacitor C13 are provided in series between the external terminals P13 and P14 as distinguishing elements. The FO output circuit 44 of the fourth embodiment is the same as the FO output circuit 41 shown in FIG. 1 except that the discrimination resistor R13 and the discrimination capacitor C13 described above are provided in series instead of the discrimination resistor R11. Therefore, the same reference numerals are given as appropriate, and description thereof is omitted.

  As shown in FIG. 5, the FO output circuit 44 of the fourth embodiment includes an external terminal P13 (detection external terminal) that is an abnormal output signal FO terminal and an external terminal P14 (a power supply terminal for setting the ground potential GND). A (model) discrimination resistor R13 and a (model) discrimination capacitor C13 are inserted in series with the discrimination power supply terminal.

  The discrimination resistor R13 and the discrimination capacitor C13 have a resistance value and a capacitance value as electrical characteristic values. Therefore, the time constant τ13 determined by the resistance value and the capacitance value can be associated with the resistance value of the gate resistor R1 in a predetermined relationship as the characteristic value for discrimination. That is, it is possible to associate the resistance values of the plurality of types of gate resistors R1 with the plurality of types of time constants τ13 (hereinafter, sometimes abbreviated as “correspondence between the gate resistance R1 and the time constant τ13”).

  By associating the gate resistance R1 with the time constant τ13, the type of IPM1 (resistance value of the gate resistance R1) can be determined from the time constant τ13.

  Therefore, by measuring the time constant τ13 determined by the resistance value of the discrimination resistor R13 and the capacitance value of the discrimination capacitor C13 during the final inspection, and determining the resistance value of the gate resistor R1 from the measured time constant τ13, The presence / absence of defective IPM 1 due to erroneous mounting of the gate resistor R1 can be easily detected.

(Effects etc.)
The FO output circuit 44 provided in the protection circuit 4 of the control unit 2 in the IPM 1 according to the fourth embodiment uses a discrimination resistor R13 and a discrimination capacitor C13 having a resistance value and a capacitance value as electrical characteristic values. It is provided inside as an element.

  For this reason, when the IPM 1 is completed, the time constant τ13 determined from the resistance value of the discrimination resistor R13 and the capacitance value of the discrimination capacitor C13 is recognized by a measurement method using the external terminals P13 and P14 described later. Can do.

  Hereinafter, a method for measuring the time constant τ13 using the external terminals P13 and P14 will be described. The time constant τ13 can be measured by applying a DC voltage between the external terminals P13 and P14, charging the fully-discharging state determination capacitor C13, and observing the voltage between the external terminals P13 and P14.

  Therefore, after the above-described association between the gate resistance R1 and the time constant τ13, the type of the IPM 1 can be accurately determined from the outside by a relatively simple operation by the measurement method.

  Further, in the FO output circuit 44 according to the fourth embodiment, the time constant τ13 is used for the correspondence with the resistance value of the gate resistor R1, so that the total number that can be associated with the type of IPM1 is the first embodiment and the first embodiment. The number of corresponding variations can be increased as much as the number of the FO output circuits 41 and FO output circuits 42 can be increased.

  Further, since the external terminal P13 and the external terminal P14 are indispensable external terminals for the IPM having the protection circuit 4, as in the first to third embodiments, a new one is provided for the discrimination resistor R13 and the discrimination capacitor C13. Thus, it is possible to obtain the IPM 1 having the FO output circuit 44, which is reduced in size without adding an external terminal.

<Others>
In the FO output circuits 41 to 44 of the first to fourth embodiments described above, the resistance value of the gate resistor R1 is given as a parameter for determining the product type of the IPM1, but the product type of the IPM1 is determined by other parameters. It may be the case. For example, when the abnormality detection threshold values of various protection functions in the protection circuit 4 are different for each product, in the first embodiment, the resistance values of a plurality of types of discrimination resistors R11 and the plurality of types of abnormality detection threshold values , It is possible to determine the product type of the IPM 1 classified by the abnormality detection threshold value from the resistance value of the determination resistor R11.

  Regarding the above-mentioned “resistance values of the plurality of types of discrimination resistors R11”, “capacitance value of discrimination capacitor C11” in the case of the second embodiment and “resistance values of the discrimination resistor R12” in the case of the third embodiment. The combination of the resistance value and the capacitance value of the discrimination capacitor C12 ”is replaced with“ time constant τ13 ”in the case of the fourth embodiment.

  Further, for example, in the FO output circuit 41 of the first embodiment, as shown by a broken line in FIG. 1, instead of the configuration (first mode) in which the determination resistor R11 is provided between the external terminals P13 and P14, the power supply voltage A configuration in which an external terminal P11, which is an external power supply terminal for supplying operating power to which VD is applied, is used as a discrimination power supply terminal, and a discrimination resistor R21 is provided between the discrimination power supply terminal and the external terminal P13 (second mode) ) May be adopted.

  Similarly, between the external terminals P11 and P13, the discrimination capacitor C11 equivalent (Embodiment 2), the discrimination resistor R12 and the discrimination capacitor C12 equivalent parallel insertion (Embodiment 3), the discrimination resistor R13 and A series insertion (Embodiment 4) corresponding to the determination capacitor C13 may be employed as the second mode. In this case, the configuration shown in FIGS. 3 to 5 is the first mode in the second to fourth embodiments.

  In the case of the second mode, at the completion of the IPM 1, for example, in the case of the FO output circuit 41 of the first embodiment, the external terminal P11 that is the external power supply terminal to which the power supply voltage VD is applied and the external that is the external detection terminal. The resistance value of the discrimination resistor R21 is determined by a relatively simple measurement method using the external terminals P11 and P13, such as supplying a constant current to the terminal P13 and measuring the voltage between the external terminals P11 and P13. can do.

  In the FO output circuits 42 to 44 according to the second to fourth embodiments, the measurement method using the external terminals P11 and P13 is used in the same manner as the measurement method using the external terminals P13 and P14. Yes.

  As described above, in each of the first to fourth embodiments, by adopting the second mode, the variation of installation of the discrimination elements (discrimination resistors R11 (R21) to R13, discrimination capacitors C11 to C13). Can be increased. For example, in the FO output circuit 41 of the first embodiment, by adopting the first and second modes in combination, a discrimination resistor R11 that is a first discrimination element is provided between the external terminals P13 and P14, Furthermore, a discrimination resistor R21, which is a second discrimination element, can be provided between the external terminals P11 and P13.

  A semiconductor device that can be discriminated by the above measuring method by adopting the combination of the first and second modes described above and setting the combination of the resistance values of the discrimination resistors R11 and R21 in association with the type of IPM1. The total number of types can be increased.

  However, in the case of the first embodiment and the third embodiment, the determination resistor R21 (resistance corresponding to R13) is provided between the external terminal P11 to which the power supply voltage VD is supplied and the external terminal P13. There is a concern about power loss due to current flowing through the discrimination resistor R21 during the operation of the IPM1.

  In the case of the second to fourth embodiments, the determination capacitor C11 (to C13) is provided between the external terminal P11 to which the power supply voltage VD is supplied and the external terminal P13. Although there is a concern that the photocoupler 30 malfunctions when the capacitor C11 is discharged, the above-described concern can be surely avoided by setting the capacitance value of the determination capacitor C11 to a sufficiently small value of about several pF.

  In the first to fourth embodiments, at least one of a resistor and a capacitor is used as a discriminating element, and the external terminals P13 and P14 (P11) are connected in the connection mode shown in FIGS. The configuration provided between them is shown. However, in addition to the connection forms shown in the first to fourth embodiments, the resistance value, the capacitance value (and combinations thereof), etc., which are electrical characteristic values, are determined by the measurement method using the external terminals P13 and P14. In addition, the present invention can be applied to any configuration provided with a connection form in which a discrimination characteristic value including a time constant determined by a resistance value and a capacitance value is recognized.

  It should be noted that the present invention can be freely combined with each other within the scope of the invention, and each embodiment can be appropriately modified or omitted.

  DESCRIPTION OF SYMBOLS 1 IPM, 2 control part, 3 control circuit, 4 protection circuit, 5 drive circuit, 6 IGBT, 10 power switching part, 30 photocoupler, 40-44 FO output circuit, C11-C13 discrimination capacitor, Q2 FO detection transistor, R1 gate resistance, R2 FO resistance, R11 to R13, R21 discrimination resistance.

Claims (7)

A switching unit having a semiconductor element for performing a switching operation;
A control unit for controlling the operation of the semiconductor element,
The controller is
A first external power supply terminal to which a power supply voltage is applied;
A second external power supply terminal to which a reference potential is set;
An external detection terminal;
The power supply voltage applied from the first external power supply terminal is received as an operating voltage, and an abnormal output signal that indicates an abnormal state of the apparatus is output from the external detection terminal. An abnormality detection circuit having an abnormality output circuit that electrically opens
The abnormal output circuit is:
A discriminating element having an electrical characteristic value, interposed between one discriminating power source terminal of the first and second external power terminals and the external detection terminal;
The discriminating element is a connection in which a discriminating characteristic value which is a value determined by the electric characteristic value or the electric characteristic value is recognized by a measuring method using the discriminating power supply terminal and the external detecting terminal. It is provided in the form,
Semiconductor device. The semiconductor device according to claim 1,
The determination power supply terminal is the second external power supply terminal.
Semiconductor device. A semiconductor device according to claim 1 Symbol placement,
The determination power supply terminal is the first external power supply terminal.
Semiconductor device. It is a semiconductor device given in any 1 paragraph among Claims 1-3,
The discrimination element is a discrimination resistor, and both the electrical characteristic value and the discrimination characteristic value are resistance values of the discrimination resistor.
Semiconductor device. It is a semiconductor device given in any 1 paragraph among Claims 1-3,
The determination element is a determination capacitor, and both the electrical characteristic value and the determination characteristic value are capacitance values of the determination capacitor.
Semiconductor device. It is a semiconductor device given in any 1 paragraph among Claims 1-3,
The discrimination element is a discrimination resistor and a discrimination capacitor inserted in parallel between the discrimination power supply terminal and the external detection terminal,
The electrical characteristic value is a resistance value of the discrimination resistor and a capacitance value of the discrimination capacitor, and the discrimination characteristic value is a combination of the resistance value and the capacitance value.
Semiconductor device. It is a semiconductor device given in any 1 paragraph among Claims 1-3,
The discrimination element is a discrimination resistor and a discrimination capacitor inserted in series between the discrimination power supply terminal and the external detection terminal,
The electrical characteristic value is a resistance value of the discrimination resistor and a capacitance value of the discrimination capacitor, and the discrimination characteristic value is a time constant determined by the resistance value and the capacitance value.
Semiconductor device.

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