JP6090975B2 - 熱電半導体装置の熱電能向上方法および熱電能試験方法 - Google Patents
熱電半導体装置の熱電能向上方法および熱電能試験方法 Download PDFInfo
- Publication number
- JP6090975B2 JP6090975B2 JP2012196584A JP2012196584A JP6090975B2 JP 6090975 B2 JP6090975 B2 JP 6090975B2 JP 2012196584 A JP2012196584 A JP 2012196584A JP 2012196584 A JP2012196584 A JP 2012196584A JP 6090975 B2 JP6090975 B2 JP 6090975B2
- Authority
- JP
- Japan
- Prior art keywords
- thermoelectric
- thermoelectric power
- temperature difference
- semiconductor device
- thermoelectric semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 101
- 238000000034 method Methods 0.000 title claims description 18
- 238000010998 test method Methods 0.000 title claims description 16
- 238000012360 testing method Methods 0.000 claims description 56
- 239000011253 protective coating Substances 0.000 claims description 42
- 239000010408 film Substances 0.000 claims description 39
- 239000004642 Polyimide Substances 0.000 claims description 38
- 229920001721 polyimide Polymers 0.000 claims description 38
- 230000001681 protective effect Effects 0.000 claims description 36
- 239000010409 thin film Substances 0.000 claims description 35
- 239000000758 substrate Substances 0.000 claims description 27
- 238000000605 extraction Methods 0.000 claims description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 17
- 238000005259 measurement Methods 0.000 claims description 14
- 235000012239 silicon dioxide Nutrition 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 238000012951 Remeasurement Methods 0.000 claims description 7
- 229910052797 bismuth Inorganic materials 0.000 claims description 4
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 4
- 230000000694 effects Effects 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 3
- 230000005619 thermoelectricity Effects 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- 229910016339 Bi—Sb—Te Inorganic materials 0.000 description 40
- 230000005676 thermoelectric effect Effects 0.000 description 13
- 239000002184 metal Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 238000010248 power generation Methods 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- 239000000523 sample Substances 0.000 description 5
- 230000005678 Seebeck effect Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 239000011800 void material Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000001931 thermography Methods 0.000 description 2
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 230000002463 transducing effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Investigating Or Analyzing Materials Using Thermal Means (AREA)
Description
ここで、この発明の熱電半導体装置の熱電能試験方法において、前記絶縁性基板は二酸化シリコン(SiO2)被覆基板であり、前記保護被膜はポリイミド保護被膜とすることができる。
Claims (5)
- 絶縁性基板上に形成されたアンチモン(S b )を材料として含む熱電半導体と、該熱電半導体上に形成された保護被膜とを有する熱電半導体装置の熱電能向上方法であって、 前記熱電半導体の一端側を陰極側とし他の一端側を陽極側として所定の高密度電流を通電しエレクトロマイグレーションを導入することにより、熱電半導体装置の熱電能を向上させることを特徴とする熱電半導体装置の熱電能向上方法。
- 請求項1記載の熱電半導体装置の熱電能向上方法において、前記絶縁性基板は二酸化シリコン(SiO2)被覆基板であり、前記熱電半導体はビスマス−アンチモン−テルリウム(Bi−Sb−Te)薄膜であり、前記保護被膜はポリイミド保護被膜であることを特徴とする熱電半導体装置の熱電能向上方法。
- 絶縁性基板上に形成されたビスマス−アンチモン−テルリウム(Bi−Sb−Te)薄膜と、該Bi−Sb−Te薄膜上に形成された保護被膜とを有する熱電半導体装置の熱電能試験方法であって、
前記熱電半導体の引き出し電極間に所定の温度差を与える温度差付与ステップと、
前記熱電半導体の引き出し電極間の熱起電力を測定する熱起電力測定ステップと、
前記熱電半導体の引き出し電極間の温度差を測定する温度差測定ステップと、
前記熱起電力測定ステップで測定された熱起電力と前記温度差測定ステップで測定された温度差とに基づき、熱電能を求める熱電能取得ステップと、
前記熱電半導体の引き出し電極間に温度差を与えずに、該熱電半導体の一端側を陰極側とし他の一端側を陽極側として所定の高密度電流を通電してエレクトロマイグレーションを導入するエレクトロマイグレーション導入ステップと、
前記熱電半導体の引き出し電極間に所定の温度差を与える温度差再付与ステップと、
前記熱電半導体の引き出し電極間の熱起電力を再測定する熱電能起電力再測定ステップと、
前記熱電半導体の引き出し電極間の温度差を再測定する温度差再測定ステップと、
前記熱起電力再測定ステップで測定された熱起電力と前記温度差再測定ステップで測定された温度差とに基づき、エレクトロマイグレーション導入後の熱電能を求める熱電能再取得ステップと、
前記熱電能取得ステップで取得された熱電能と前記熱電能再取得ステップで取得されたエレクトロマイグレーション導入後の熱電能とを比較する熱電能比較ステップとを備えたことを特徴とする熱電半導体装置の熱電能試験方法。 - 請求項3記載の熱電半導体装置の熱電能試験方法において、前記保護被膜を有していない熱電半導体装置を用いて前記温度差付与ステップから前記熱電能再取得ステップまでを実行する保護被膜無し熱電能試験ステップと、
前記保護被膜を有する熱電半導体装置を用いた場合における前記熱電能取得ステップで取得された熱電能及び前記熱電能再取得ステップで取得されたエレクトロマイグレーション導入後の熱電能と、前記保護被膜無し熱電能試験ステップの熱電能取得ステップで取得された熱電能及び熱電能再取得ステップで取得されたエレクトロマイグレーション導入後の熱電能とを比較する保護被膜影響比較ステップとをさらに備えたことを特徴とする熱電半導体装置の熱電能試験方法。 - 請求項3又は4記載の熱電半導体装置の熱電能試験方法において、前記絶縁性基板は二酸化シリコン(SiO2)被覆基板であり、前記保護被膜はポリイミド保護被膜であることを特徴とする熱電半導体装置の熱電能試験方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012196584A JP6090975B2 (ja) | 2012-09-06 | 2012-09-06 | 熱電半導体装置の熱電能向上方法および熱電能試験方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012196584A JP6090975B2 (ja) | 2012-09-06 | 2012-09-06 | 熱電半導体装置の熱電能向上方法および熱電能試験方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014053432A JP2014053432A (ja) | 2014-03-20 |
JP6090975B2 true JP6090975B2 (ja) | 2017-03-08 |
Family
ID=50611648
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012196584A Active JP6090975B2 (ja) | 2012-09-06 | 2012-09-06 | 熱電半導体装置の熱電能向上方法および熱電能試験方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP6090975B2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101670773B1 (ko) * | 2014-11-27 | 2016-11-01 | 한국표준과학연구원 | 열전박막의 제백계수 측정장치 |
KR101662714B1 (ko) * | 2014-11-27 | 2016-10-07 | 한국표준과학연구원 | 열전박막의 수평 및 수직방향 제백계수 측정 센서 유닛 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06104494A (ja) * | 1992-09-18 | 1994-04-15 | Fujitsu Ltd | 薄膜熱電対素子とその製造方法 |
US20070137687A1 (en) * | 2005-12-15 | 2007-06-21 | The Boeing Company | Thermoelectric tunnelling device |
US20130199025A1 (en) * | 2010-10-05 | 2013-08-08 | Panco Gmbh | Stable thermoelectric devices |
-
2012
- 2012-09-06 JP JP2012196584A patent/JP6090975B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
JP2014053432A (ja) | 2014-03-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Wolgast et al. | Low-temperature surface conduction in the Kondo insulator SmB 6 | |
Liu et al. | Metal-insulator transition in SrTiO 3-x thin films induced by frozen-out carriers | |
Durkan et al. | Analysis of failure mechanisms in electrically stressed gold nanowires | |
Kato et al. | Effect of the crystallinity on the electromigration resistance of electroplated copper thin-film interconnections | |
Uchida et al. | Observation of the magneto-Thomson effect | |
Shvetsov et al. | Lateral Josephson effect on the surface of the magnetic Weyl semimetal Co 3 Sn 2 S 2 | |
JP6090975B2 (ja) | 熱電半導体装置の熱電能向上方法および熱電能試験方法 | |
Völklein et al. | Microchips for the investigation of thermal and electrical properties of individual nanowires | |
Otsuka et al. | Estimation of phonon and carrier thermal conductivities for bulk thermoelectric materials using transport properties | |
Liu et al. | Anomalous thermoelectricity in strained Bi2Te3 films | |
Delatorre et al. | Thermoelectric properties of electrodeposited CuNi alloys on Si | |
Beyne et al. | The first observation of p-type electromigration failure in full ruthenium interconnects | |
Rojo et al. | High electrical conductivity in out of plane direction of electrodeposited Bi2Te3 films | |
Hartman et al. | Electromigration in thin gold films | |
Kuge et al. | Electromigration characteristics of CuAl2 | |
Barati et al. | Thermoelectric characterization platform for electrochemically deposited materials | |
Chien et al. | Thermal conductivity of thermoelectric thick films prepared by electrodeposition | |
Fedotov et al. | Polycrystalline bismuth films: Correlation between grain structure and electron transport | |
Yang et al. | Thermal and electrical characterization of Cu/CoFe superlattices | |
Kim et al. | Structural dependence of grain boundary resistivity in copper nanowires | |
Yoon et al. | Observation of the spin Seebeck effect in Bi2Te3 topological insulator without an external magnetic field | |
Burkov et al. | Strongly nonlinear electronic transport in Cr-Si composite films | |
Draelos et al. | Subkelvin lateral thermal transport in diffusive graphene | |
Heremans et al. | Geometrical magnetothermopower in n-and p-type InSb | |
McCartan et al. | Fundamental aspects of conduction in charged ErMnO3 domain walls |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20150406 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20160118 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160223 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160420 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20161011 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20161207 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20170124 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20170206 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6090975 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |