JP6088310B2 - Luminescent body holding substrate and manufacturing method thereof - Google Patents

Description

The present invention relates to a substrate used for lighting equipment, an ultraviolet irradiation device, an exposure light source device, and the like, and relates to a substrate having high light reflectivity by efficiently conducting heat from a heating element or a light emitting body to a heat radiating portion.

  An illumination device, an ultraviolet irradiation device, an exposure light source device, and the like are devices that generate visible light, ultraviolet light, and other various wavelengths of light (collectively referred to as “light” hereinafter).

  As a method of generating such light, a method of exciting a light emitting element with electric energy is most often used.

  In particular, devices that generate large amounts of light tend to be used in recent years, and they have a structure in which light-emitting elements that convert large electric energy and elements are concentratedly arranged in a circuit. At this time, not only when there is a space in the installation location, but also when a light emitting element that converts large electrical energy into a relatively small circuit or when the elements are arranged in a concentrated manner, heat generated during light emission is reduced. It becomes a problem.

  For example, when replacing a conventional mercury lamp with LED illumination, it is necessary to concentrate and arrange many LED elements in a space similar to the space where the mercury lamp is housed. Not only LEDs, but light emitting elements convert electrical energy into light, and heat is generated during the conversion. Therefore, the substrate on which the element is arranged not only has sufficient light reflection, but also requires a mechanism for efficiently releasing heat from the element. If the heat release is not efficient, the device's service temperature will be exceeded, the electrical resistivity of the device will rise abnormally, and other parts of the device will deteriorate or ignite due to overheating. Note that “reflection of light” here is not limited to parallel reflection that reflects an image as it is like a mirror, but the reflected object itself does not absorb light and reduces the amount of light received. It refers to the reflection that diffuses to the surroundings.

  For this reason, the light emitting device that generates such a large amount of heat generation includes a heat sink or a heat radiating plate that releases the heat of the heating element to the outside, and releases the heat of the heating element.

However, heat sinks and heat sinks are generally made of a metal such as copper or aluminum because of their high thermal conductivity, but light emitting elements and circuits cannot be mounted thereon because they are conductive. In addition, since they absorb a certain amount of light, they cannot reflect light with a certain reflectance (for example, 80% or more).

  Patent Document 1 discloses a heat radiating unit having an intermediate body interposed between a heat sink, a heat radiating plate, and a heating element in an illumination device, an electronic device, a transportation device, and a manufacturing device including an electronic component or a mechanical component that serves as a heating element. An LED package including the heat sink used has been proposed.

Patent Document 2 proposes a heat dissipation unit in which AlN, cBN, hBN, Al ₂ O ₃ , MgO, diamond and graphite are dispersed as fillers in an inorganic material formed by hydrolysis and dehydration polymerization of a metal alkoxide. .

Japanese National Patent Publication No. 11-346029 JP 2013-4822 A

  Patent Document 1 discloses a technique for releasing heat from a semiconductor laser chip by connecting the structure of the semiconductor laser chip to a heat sink and a high thermal conductivity state. However, Patent Document 1 has a complicated semiconductor laser chip and peripheral structure, and is not suitable for heat dissipation of a device on which many heating elements are mounted.

The technique of Patent Document 2 can select TiO ₂ , ZrO ₂ , Al ₂ O ₃ , MgO or the like having a high light reflectivity, and can obtain a reflective film that does not require a large manufacturing cost. Further, by selecting AlN or the like, a reflective film having sufficiently high heat dissipation can be obtained.

However, even if the filler has a high whiteness such as MgO, if the refractive index of the filler is not so high (refractive index of about 1.73 for the wavelength of 550 nm of MgO), the light received in the crystal is attenuated. Therefore, it is difficult to keep the reflected light quantity constant at, for example, 80% or more with respect to the received light quantity. TiO ₂ (refractive index of about 2.6 with respect to a wavelength of 550 nm), ZrO ₂ (2.03 of the same), Y ₂ O ₃ (about 1.87 of the same) and the like are fillers having a high degree of whiteness and a high refractive index. Can be mentioned. These are not very high in thermal conductivity, but are very high in light reflectivity.

However, even when these fillers are used, if the thickness of the film is not sufficiently thick, for example, not less than 100 μm, a part of the light is transmitted and the reflectance is lowered. On the other hand, if the reflective film is made thicker than 100 μm, heat conduction is not sufficient, and overheating of elements on the substrate becomes a problem.

In the present invention, by using the technique of the above-mentioned Patent Document 2, the reflective film is formed of two or more layers instead of one layer, and a film using a filler having a higher reflectivity on the surface is provided, and a film having a higher thermal conductivity is provided inside. A substrate having a reflective film having both reflectivity and thermal conductivity was obtained.

The present invention provides a light-emitting body holding substrate that has a sufficiently high light reflectivity and a sufficiently high heat dissipation property and can mount a light-emitting body that generates heat on the substrate.

Schematic diagram of one embodiment of the light emitter holding substrate of the present invention

The present invention
On the base, there is a first film from the side closer to the base, a second film overlapping the first film, a circuit and a light emitter.
The first film has a thickness of 20 to 200 μm and a composition in which a first filler is dispersed in a first organopolysiloxane component,
The first filler includes particles having a single thermal conductivity of 50 W / m · K or more,
The second film has a thickness of 5 to 100 μm, and has a composition in which a second filler is dispersed in a second organopolysiloxane component,
The second filler is a light emitter holding substrate including particles having a refractive index of 1.75 or more.

As a specific filler, as the first filler, one or more of AlN (aluminum nitride), SiC (silicon carbide), c-BN (cubic boron nitride), and diamond is used as the second filler. As ZrO ₂ (zirconium oxide), Y ₂ O ₃ (yttrium oxide), h-BN (hexagonal boron nitride), TiO ₂ (titanium oxide), or Nb ₂ O ₅ (niobium oxide) The above is mentioned.

  The “light emitter” refers to a member that generates visible light, ultraviolet light, extreme ultraviolet light, laser light, and the like. The light emitter is fixed on the substrate directly or via a circuit or other member. The light-emitting body requires a circuit for supplying power, and at least a part of the circuit is provided on the substrate.

  A part of the light generated from the light emitter is directed to the irradiation target by being reflected on the substrate. Therefore, it is necessary to use a material having a high light reflectance for the surface portion of the substrate. In the case of a material having a low reflectance, light is not reflected but is absorbed in the material, and the amount of light received by the irradiation target is reduced with respect to the amount of light emitted from the light emitter. This is not only power efficient but also causes the light emitter to overheat.

Therefore, in the present invention, a second filler having a high whiteness and a high refractive index is used in the second film. The second filler may comprise a _{ZrO 2, Al 2 O 3,} Y 2 O 3, h-BN, TiO 2, Nb 2 any one or more _{O 5} particles. These ceramic particles not only have high whiteness but also a high refractive index. Due to the high whiteness, a wide wavelength centered on visible light can be reflected without being absorbed. Moreover, when light is an ultraviolet ray, h-BN or ZrO ₂ is particularly effective. Further, since the refractive index is high, the attenuation of light inside the particles is small, and the difference between the received light amount and the reflected light amount is small. That is, the reflection efficiency is high. Preferably, 90% by volume or more of the second filler, more preferably all of the second filler is occupied by one or more of the components.

  The second film is formed further on the first film formed on the substrate (in this case, “above” means the side opposite to the base when viewed from the first film, Does not mean).

  Considering only the reflectance of the second film, it is more effective to make it thicker. Further, for example, when only the second film is formed with a thickness of 5 μm on the metal base, a part of the light is transmitted and reaches the base. This is because the second filler is dispersed in the organopolysiloxane, and it is difficult to achieve a particle concentration of a certain level or more in consideration of the application to be applied.

  The second film has a higher thermal conductivity than a resin or the like, but is considerably lower than a metal such as aluminum. Therefore, if the second film is made too thick, the efficiency of releasing the heat generated from the light emitter to the base is deteriorated. The thickness of the second film satisfying both of these is 5 to 100 μm. If it is thinner than 5 μm, light transmission will increase. If it is thicker than 100 μm, it is difficult for heat generated from the element to escape to the base.

  In the present invention, the first film is necessarily provided between the second film and the base.

  The first film has a high thermal conductivity. For example, the first film is a film in which a first filler containing any one of particles such as AlN, SiC, c-BN, and diamond is dispersed in organopolysiloxane. The first filler used for the first film is characterized by high thermal conductivity. Since it has high heat conduction, the heat of the second film can be easily released toward the base.

  The particles used for the first filler are not particularly high in whiteness, but have a very high refractive index. For this purpose, most of the light transmitted through the second film is reflected back in the second filler direction without escaping in the base direction.

  Since the first film has the properties described above, the second film does not need to be formed thick enough to be completely reflected. Therefore, the thickness of the second film may be 100 μm or less, which is an allowable range from the viewpoint of heat conduction.

  With the combination of the first film and the second film described above, the heat generated from the light emitter can be efficiently released in the base direction, and the light emitter holding substrate having a sufficiently high light reflectance can be obtained.

  The wiring and the light emitter are formed or provided on the second film. Since the second film has a high reflectance as described above, it is desirable to make the area as small as possible when a wiring or a light emitter is provided on the second film. Desirably, 85% or more of the surface area of the second film is exposed without being blocked by the wiring or the light emitter. The wiring and the light emitter may be provided directly on the second film, or may be provided between them via a white or transparent coating agent.

  Also, if the first film and the second film are too thin, the dielectric breakdown voltage will not increase, and dielectric breakdown will occur readily when a large voltage is applied. For this reason, there is a concern that an electric circuit may not be established because current is passed through the first film and the second film between the base and the element.

  The first film and the second film will be described.

  The first film and the second film have a composition in which an inorganic filler containing ceramic or diamond particles is dispersed in organopolysiloxane.

  The organopolysiloxane component has heat resistance at the use temperature, is sufficiently transparent, and has high weather resistance.

  Among the organopolysiloxanes, organoalkoxysilane dehydrated condensates can be particularly easily produced.

This organoalkoxysilane has a molecular formula R ¹ mSi (OR ² ) _4-m (where R ¹ is an organic group having 1 to 8 carbon atoms, R ² is an alkyl group having 1 to 5 carbon atoms, and m is an integer of 0 to 2). )
It is an organic silicon represented by

As the “organic group having 1 to 8 carbon atoms” for R ^{1 in} the formula, a linear alkyl group such as methyl, ethyl, n-propyl, n-butyl, n-pentyl, hexyl, heptyl, octyl; Branched alkyl groups such as propyl, iso-butyl, sec-butyl, tert-butyl, iso-pentyl, tert-pentyl, neo-pentyl, methylhexyl, dimethylhexyl, ethylhexyl, methylheptyl; vinyl, allyl, iso- Propenyl, butenyl, pentenyl, hexenyl, heptenyl, octenyl, etc .; linear alkenyl groups such as ethynyl, propynyl, butynyl, pentynyl, hexynyl, heptynyl, octynyl, butazinyl, pentazinyl, hexazinyl, heptazinyl, octadinyl, etc .; methylpentenyl, Echi Rupentenyl, dimethylpentenyl, methylhexenyl, ethylhexenyl, dimethylhexenyl, methylheptenyl, etc .; branched alkenyl groups or alkynyl groups such as methylpentynyl, ethylpentynyl, dimethylpentynyl, methylhexynyl, ethylhexynyl, dimethylhexynyl, methylheptynyl; phenyl And aryl groups such as tolyl and xylyl; substituted linear alkyl groups such as γ-chloropropyl, γ-methacryloyloxypropyl, and γ-mercaptopropyl. Of these, methyl, ethyl, n-propyl, iso-propyl, n-butyl, vinyl, phenyl, γ-methacryloyloxypropyl, γ-mercaptopropyl and the like are preferable.

Examples of the “alkyl group having 1 to 5 carbon atoms” of the substituent R ² of Formula 1 include linear alkyl groups such as methyl, ethyl, n-propyl, n-butyl, n-pentyl; iso-propyl, iso- Examples thereof include branched alkyl groups such as butyl, sec-butyl, tert-butyl, iso-pentyl, tert-pentyl and neo-pentyl.

  As specific examples of organoalkoxysilane, when m is 0, tetramethoxysilane, tetraethoxysilane, tetra-n-propoxysilane, tetraisopropoxysilane, tetra-n-butoxysilane, etc .; Trimethoxysilane, methyltriethoxysilane, methyltri-n-propoxysilane, methyltriisopropoxysilane, methyltri-n-butoxysilane, ethyltrimethoxysilane, ethyltriethoxysilane, n-propyltrimethoxysilane, n-propyltri Ethoxysilane, phenyltrimethoxysilane, phenyltriethoxysilane, vinyltrimethoxysilane, γ-methacryloyloxypropyltrimethoxysilane, γ-mercaptopropyltrimethoxysilane, etc .; when m is 2, dimethyl Examples include dimethoxysilane, dimethyldiethoxysilane, diethyldimethoxysilane, diphenyldimethoxysilane, and diphenyldiethoxysilane. These organoalkoxysilanes can be used alone or in combination of two or more, and among them, a group consisting of tetramethoxysilane, tetraethoxysilane, methyltrimethoxysilane, methyltriethoxysilane It is preferable that at least one selected from

  What added 20-75% of the volume fraction as a filler in the organopolysiloxane described above is called "paint".

  When a dehydration condensate of organoalkoxysilane is used as organopolysiloxane, 0.05 to 10 mol of water is added to 1 mol of organoalkoxysilane and hydrolyzed at 20 to 80 ° C. Is added to obtain a liquid organopolysiloxane composition in which a filler is dispersed. The amount of filler is suitably 20 to 75% in terms of volume fraction, and the balance is the organopolysiloxane component.

In the case where an organoalkoxysilane dehydration condensate is used, different paints having various characteristics can be produced by changing the types and values of R ¹ , R ² and m in the above-mentioned formula of the organoalkoxysilane.

As the filler, particles having extremely high thermal conductivity such as AlN, diamond, SiC, and c-BN are added as the first filler to form the first film with respect to the organopolysiloxane. This is called the first paint. Similarly, for the second film, particles having high whiteness and high reflectance such as ZrO ₂ , Al ₂ O ₃ , Y ₂ O ₃ , h-BN, TiO ₂ , and Nb ₂ O ₅ are used as the second film. Add as a filler. This is called the second paint.

  For both the first filler and the second filler, the preferred range of the filler particle size is about 0.1 to 50 μm. The particle diameter that can be easily obtained to some extent and can be uniformly dispersed in the film is within this range.

  The mixing of the organopolysiloxane and the filler is not limited as long as an apparatus and a method are used as long as a mixer capable of mixing uniformly is used with little mixing of impurities. For example, a ball mill, attritor, star mill, rakai machine, food mixer, etc. may be selected. The mixing time is about 20 minutes to 24 hours.

  As described above, the first paint and the second paint are obtained as a mixture of the organopolysiloxane and the filler.

  If the first paint and the second paint exhibit substantially the same shrinkage, a problem such as cracking or peeling of the film due to the difference in shrinkage between the two during heat treatment curing does not occur, so the first paint and the second paint are used. The organopolysiloxane component desirably undergoes similar shrinkage during the heat treatment described below.

  More desirably, the organopolysiloxane component used in the first paint and the second paint is the same component.

The organoalkoxysilane that is the starting material of the organopolysiloxane may be of the same type or numerical value as those described above for R ¹ , R ² , and m, but it is more preferable to use the same one. Moreover, it is preferable that the molar ratio of water added in the hydrolysis is as close as possible. If organoalkoxysilanes having the same types and values of R ¹ , R ² , and m are used as raw materials and the molar ratio of water to be hydrolyzed is constant, the main chain portion of the generated organopolysiloxane is the first paint and the second paint. This is because it is the same as or similar to the paint, and the two films exhibit substantially the same shrinkage in the heat treatment curing after application described later.

  The obtained paint is applied to the base constituting the luminous body holding base in the order of the first paint and the second paint, and is heat-treated in air at a temperature of 150 to 300 ° C. to be cured on the base surface. . Thus, a film can be formed on the surface of the base in the order of the first film and the second film. The atmosphere may be any of air, a reducing atmosphere, and a vacuum atmosphere.

  There is also a method in which the first coating is applied first and cured, and then the second coating is applied and cured. However, it is preferable to perform the curing after both are applied. This is because shrinkage occurs during the curing process, and if the second paint shrinks on the already shrunk first film, it causes cracking. Further, if heat treatment curing is performed in a state where the resin components of the first paint and the second paint are in contact with each other, the organopolysiloxane components are cured while taking up the structure of the other party at the interface between the two. If the organopolysiloxane component used for the first paint and the organopolysiloxane component used for the second paint are the same component, this function becomes the highest.

  Since the two films thus obtained have high bonding strength, they are almost as strong as when a single paint is used, and there is no fear of peeling from the interface between them. In addition, since the bonding is performed to such an extent that there is virtually no interface, the interface does not hinder heat conduction, and the thermal conductivity between the first film and the second film does not decrease.

  The circuit and the light emitter are formed on the film after the second film is formed. These may be provided so as to be in direct contact with the second film, or may be provided further on the second film via some highly translucent processing layer. Further, the place where the circuit and the light emitter are provided may be on the first film. At this time, since the second film cannot be overlaid, it is necessary to use a mask or the like when forming the second film.

The base may have a certain degree of flatness and may be any material having high thermal conductivity that can form a film, a circuit, a light emitter, and the like. Specific examples include a copper plate, an aluminum plate, a carbon plate, a carbon fiber plate, and a tungsten plate.

(Manufacturing method of the first paint)
As starting materials, 1 (mol) of methyltriethoxysilane, 0.1 (mol) of water and a small amount of acetic acid as a pH adjuster were mixed and stirred at room temperature for 1 hour.

  Subsequently, hydrolysis was performed at 30 ° C. for 24 hours to obtain a solution.

Furthermore, AlN (aluminum nitride) particles having an average particle diameter of 2 μm were mixed so as to be 40% by volume with respect to the solution, and further mixed for 10 hours at a room temperature using a mechanical machine. The resulting solution is designated as Paint No. 1.
(Manufacturing method of the second paint)
As starting materials, 1 (mol) of methyltriethoxysilane, 0.1 (mol) of water and a small amount of acetic acid as a pH adjuster were mixed and stirred at room temperature for 1 hour.

  Then, a condensation reaction treatment was performed at 80 ° C. for 100 hours to obtain a solution.

Furthermore, TiO ₂ (titanium oxide) particles having an average particle diameter of 2 μm were mixed so as to be 40% by volume with respect to the solution, and further mixed for 10 hours at room temperature using a mechanical machine. The resulting solution is designated as Paint No. 2.

(Coating on base)
A plate-like aluminum alloy was selected as the base for holding the light emitter and the circuit. Aluminum alloys have extremely high thermal conductivity, are inexpensive, hardly corrode, and are easy to process.

  Paint No. 1 was applied to the aluminum base with a thickness of about 100 μm using a squeegee.

  Paint No. 1 was dried at room temperature for 24 hours, and then further dried at 120 ° C. in the atmosphere for 10 minutes.

  The coating No. 2 was applied to a thickness of about 100 μm so as to overlap the coating surface of the coating No. 1 after drying. The paint No. 2 was dried at room temperature for 1 day, and further dried in the atmosphere at 120 ° C. for 10 minutes.

After drying, it was heated to 300 ° C. in an oven in an air atmosphere and held for 30 minutes. By this heating, the condensation polymerization in Paint No. 1 and Paint No. 2 was completely completed, and a two-phase cured film was obtained on the base surface. Due to complete drying and condensation polymerization, both the first film of the paint No. 1 part and the second film of the paint No. 2 part contracted from the time of application. The thicknesses of the first film and the second film were both about 80 μm. Methyltriethoxysilane was converted to methylpolysiloxane, an organopolysiloxane, by the above treatment.

(Circuit pattern and luminous body mounting)
A circuit pattern made of silver is printed on the substrate having the first film and the second film obtained as described above, as shown in FIG. 1, and an LED (light emitting diode) element is selected as a light emitter, and a circuit is formed. It was provided in the energization path on the pattern. The LED element has one pole on the circuit pattern, and the other pole is connected to another part of the circuit by bonding. This circuit was connected to a power source to cause the LED element to emit light.

(Evaluation of board performance)
The obtained substrate was evaluated by performing the following tests.
1. Reflectance measurement Light reflectance was measured using an integrating sphere on the substrate. As a result, the substrate showed a reflectance of 92% with respect to the entire visible light region.
2. Thermal conductivity test A total of 10 W / hr of electric power was applied to the device, and the temperature of the LED device was measured when the temperature of the LED device, the substrate, and the surroundings was not changed.

As a result, the temperature of the LED element was stable at 56 ° C. This temperature is a temperature that does not adversely affect the device even when the LED device is continuously lit for several tens of thousands of hours.

(Other examples and their evaluation)
As described above, an embodiment of the present invention has been shown as an example.

  Next, the same test was conducted by changing the composition and thickness of the film within the scope of the present invention. In addition, the thing with an average particle diameter of 1-10 micrometers was used for the 1st filler and the 2nd filler.

  Table 1 shows, from the left, the composition of the first film, the thickness of the first film, the composition of the second film, and the thickness of the second film (the same applies to Table 3 described later).

  Table 2 shows the reflectance of the substrate obtained in Table 1 with respect to the entire visible light range and the temperature of the LED element (the same applies to Table 4 described later). Experimental conditions not described are the same as in the above test.

From these results, it was found that the light emitter holding substrate of the present invention has a sufficiently high reflectance with respect to visible light. Further, the temperature rise of the element was about 60 ° C. at the maximum, and it was found that the element could be sufficiently used.

(Comparative sample and its evaluation)
Samples outside the scope of the present invention were subjected to similar tests for comparison.

As comparative samples: (1) Thicknesses of film materials similar to those of the first film and the second film of the present invention are changed (Comparative Samples 11 to 14)
(2) Thickness of 200 μm formed with a single paint (Comparative Samples 21 and 22)
(3) Those using generally used epoxy resin instead of the paint used in the present invention (Comparative Samples 31, 32)
It was performed about three ways.

  Table 3 shows the membrane, and Table 4 shows the evaluation results.

  In addition, the test for which the element temperature shown in Table 4 reached 99 ° C. was terminated at that time.

The samples listed in Table 3 are comparative samples outside the scope of the present invention.

The samples listed in Table 4 are comparative samples outside the scope of the present invention.

  In Comparative Example 11 and Comparative Example 13, since the first film or the second film was too thick, the heat dissipation decreased and the element temperature increased to 80 to 95 ° C. For this reason, the lifetime of the element, which is a semiconductor, is reduced, and there is a risk of burns or ignition by contact with the human body.

  In Comparative Example 12, the dielectric strength was not sufficient, and light emission became unstable at an early stage. This is because the first film having a high dielectric strength is too thin. Moreover, since the 1st film | membrane was too thin, the reflectance was not enough.

  In Comparative Example 14, since the second film was too thin, sufficient white light could not be obtained, and the visible light reflectance did not increase.

Comparative Example 21 is a comparative sample in which only the first film whose filler is AlN is provided with a thickness of 150 μm. Further, Comparative Example 22 is a comparative sample in which only the second film whose filler is ZrO ₂ is similarly provided with a thickness of 150 μm.

  Although the comparative example 21 had sufficient heat dissipation, the reflectance and whiteness were significantly inferior compared with the samples 1-10.

  On the other hand, in Comparative Example 22, the reflectance and whiteness were sufficient, but sufficient heat dissipation was not obtained.

Comparative Example 31 and Comparative Example 32 are not the first film and the second film used in the present invention, but comparative samples in which a film made of an epoxy resin is coated by 100 μm and 200 μm, respectively. The visible light reflectivity showed a certain performance, but the heat dissipation was not sufficient and the element temperature rose immediately after use. Further, since the withstand voltage is low, the operation is unstable and cannot be used.

(Other examples)
On the base of the copper plate, the first filler of Samples 1 to 10 was replaced with AlN, the second filler was replaced with h-BN, and the other phosphor-supporting substrates were obtained under the same conditions. h-BN has a very high reflectivity for all ultraviolet rays.

  A vacuum ultraviolet ray generator and circuit were provided on the obtained substrate, and the reflectance and thermal conductivity were measured.

The luminous body holding substrate of the present invention had a maximum temperature rise of 70 ° C. and a reflectance of more than 85%, and no defect occurred after 1000 hours of continuous use.

1 Base 2 First film 3 Second film 4 Light emitter 5 Wiring pattern 6 To power supply

Claims (8)

On the base, the first film from the side closer to the base, the second film overlapping the first film, the circuit and the light emitter,
The first film has a thickness of 20 to 200 μm and a composition in which a first filler is dispersed in a first organopolysiloxane component,
The first filler includes particles having a single thermal conductivity of 50 W / m · K or more,
The second film has a thickness of 5 to 100 μm, and has a composition in which a second filler is dispersed in a second organopolysiloxane component,
The light emitting element holding substrate, wherein the second filler includes particles having a refractive index of 1.75 or more.   The light emitter holding substrate according to claim 1, wherein the first filler contains one or more of AlN, diamond, SiC, and c-BN. The second filler according to _{ZrO 2, Y 2 O 3,} h-BN, any one of claim 1 or claim 2 comprising any one or more of TiO 2, _Nb 2 _{O 5} Emitter holding substrate.   The light emitter holding substrate according to any one of claims 1 to 3, wherein the first organopolysiloxane component and the second organopolysiloxane component are the same organopolysiloxane component.   The light emitter holding substrate according to claim 1, wherein the organopolysiloxane component is a dehydration condensate of an organoalkoxysilane.   The light emitter holding substrate according to any one of claims 1 to 5, wherein the light emitter is generated centering on either visible light or ultraviolet light. at least,
A step of applying and drying a liquid paint in which particles having a thermal conductivity of 50 W / m · K or more as a single substance in the first resin component are dispersed on a plate-like base having high thermal conductivity;
A step of applying and drying a liquid paint in which particles having a refractive index of 1.75 or more as a filler are dispersed in the second resin component, overlaid on the dried paint;
A step of heat-treating the two-layer paint in a range of 150 to 300 ° C;
A method for manufacturing a light emitter holding substrate, comprising: forming or mounting a circuit and a light emitter. Organopolysiloxane obtained by hydrolyzing and condensing organoalkoxysilane as the first resin component,
The manufacturing method of the light-emitting body holding | maintenance board | substrate of Claim 7 whose said 2nd resin component is the organopolysiloxane obtained by hydrolyzing and condensing organoalkoxysilane.

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