JP6070924B2 - Semiconductor elements and electronic equipment - Google Patents

Description

  The present invention relates to a semiconductor element and an electronic device.

In recent years, for example, silicon MEMS (Micro Electro Mechanical)
A technique for realizing a small-sized semiconductor element by using a (System) technique has attracted attention.

  The semiconductor element is used, for example, as a physical quantity sensor element that detects a physical quantity such as acceleration or angular velocity based on the capacitance between the fixed electrode and the movable electrode. Such a semiconductor element includes, for example, a contact portion that enables electrical connection between a wiring and a fixed electrode.

  For example, Patent Document 1 discloses using metal bumps formed of solder as a member that enables electrical connection.

JP 2009-74979 A

  However, since the technique described in Patent Document 1 uses metal bumps formed of solder, the resistance may increase due to, for example, oxidation of the metal bumps. This may reduce the reliability of the semiconductor element. In a semiconductor element, electrical connection is desired to have a low resistance.

  An object of some aspects of the present invention is to provide a semiconductor device that can have high reliability. Another object of some embodiments of the present invention is to provide an electronic device including the semiconductor element.

  SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following aspects or application examples.

[Application Example 1]
The semiconductor element according to this application example is
An insulating substrate provided with a groove,
A contact portion provided in the groove and electrically connected to the silicon body;
A silicide layer provided between the silicon body and the contact portion and connecting the silicon body and the contact portion;
including.

  According to such a semiconductor element, the silicon body and the contact portion are electrically connected with low resistance by the silicide layer. As a result, such a semiconductor element can have high reliability.

[Application Example 2]
In the semiconductor element according to this application example,
The silicide layer may be formed by a reaction between silicon constituting the silicon body and a substance constituting the contact portion.

  According to such a semiconductor element, since the silicon in the silicon body and the substance in the contact portion are chemically bonded to form a silicide layer, the silicon body and the silicon body The contact portion can be electrically connected with high strength.

[Application Example 3]
In the semiconductor element according to this application example,
The contact portion may be made of platinum.

  According to such a semiconductor element, the contact portion is not easily oxidized, and the silicon body and the contact portion are more reliably electrically connected with low resistance. In addition, for example, the process of removing the oxide film formed on the contact portion is not necessary, so that the process can be simplified.

[Application Example 4]
In the semiconductor element according to this application example,
Including wiring provided in the groove,
The wiring may be electrically connected to the silicon body via the contact portion and the silicide layer.

  Such a semiconductor element can have high reliability.

[Application Example 5]
In the semiconductor element according to this application example,
Provided in the groove portion, disposed between the contact portion and the wiring, including a connection metal using gold or aluminum,
The wiring may be electrically connected to the silicon body via the connection metal.

  According to such a semiconductor element, the insulating substrate and the silicon substrate to be a silicon body can be bonded (for example, anodic bonding) while crushing the connection portion. Therefore, it is possible to more reliably join the insulating substrate and the silicon body while securing the electrical connection between the contact portion and the silicon body.

[Application Example 6]
In the semiconductor element according to this application example,
A convex portion is provided integrally with the insulating substrate in the groove portion,
The height of the convex part is smaller than the depth of the groove part,
The contact portion may be provided between the silicon body and the convex portion.

  According to such a semiconductor element, the insulating substrate and the silicon substrate can be more reliably bonded (for example, anodic bonding) while ensuring electrical connection between the contact portion and the silicon body.

[Application Example 7]
The semiconductor element according to this application example is
An insulating substrate in which wiring is provided in the groove,
A silicon body provided across the groove,
A convex portion provided integrally with the insulating substrate in the groove portion and having a height smaller than the depth of the groove portion,
The wiring extends to the top surface of the convex portion and is provided between the silicon body and the convex portion,
A silicide layer is provided at the interface between the silicon body and the wiring.

  According to such a semiconductor element, the silicon body and the wiring are electrically connected with low resistance by the silicide layer. As a result, such a semiconductor element can have high reliability.

[Application Example 8]
In the semiconductor element according to this application example,
The material of the wiring may be platinum.

  According to such a semiconductor element, the wiring is not easily oxidized, and the silicon body and the wiring are more reliably electrically connected with low resistance. Further, for example, the process of removing the oxide film formed on the wiring becomes unnecessary, so that the process can be simplified.

[Application Example 9]
In the semiconductor element according to this application example,
An insulating layer provided between the insulating substrate and the silicon body may be included.

  According to such a semiconductor element, the insulating substrate and the silicon substrate can be more reliably bonded (for example, anodic bonding) while ensuring electrical connection between the contact portion and the silicon body.

[Application Example 10]
In the semiconductor element according to this application example,
The silicon body is
Moving parts;
A movable electrode portion provided on the movable portion;
And a fixed electrode portion provided on the insulating substrate and disposed to face the movable electrode portion.

  Such a semiconductor element can have high reliability.

[Application Example 11]
The electronic device according to this application example is
The semiconductor device according to this application example is included.

  According to such an electronic device, since the semiconductor element according to the application example is included, high reliability can be obtained.

The top view which shows typically the semiconductor element which concerns on 1st Embodiment. FIG. 3 is a cross-sectional view schematically showing the semiconductor element according to the first embodiment. FIG. 3 is a cross-sectional view schematically showing the semiconductor element according to the first embodiment. FIG. 3 is a cross-sectional view schematically showing the semiconductor element according to the first embodiment. Sectional drawing which shows typically the manufacturing process of the semiconductor element which concerns on 1st Embodiment. Sectional drawing which shows typically the manufacturing process of the semiconductor element which concerns on 1st Embodiment. Sectional drawing which shows typically the manufacturing process of the semiconductor element which concerns on 1st Embodiment. Sectional drawing which shows typically the manufacturing process of the semiconductor element which concerns on 1st Embodiment. Sectional drawing which shows typically the semiconductor element which concerns on the 1st modification of 1st Embodiment. Sectional drawing which shows typically the semiconductor element which concerns on the 2nd modification of 1st Embodiment. Sectional drawing which shows typically the semiconductor element which concerns on 2nd Embodiment. Sectional drawing which shows typically the semiconductor element which concerns on the modification of 2nd Embodiment. Sectional drawing which shows typically the manufacturing process of the semiconductor element which concerns on the modification of 2nd Embodiment. The perspective view which shows typically the electronic device which concerns on 3rd Embodiment. The perspective view which shows typically the electronic device which concerns on 3rd Embodiment. The perspective view which shows typically the electronic device which concerns on 3rd Embodiment.

  DESCRIPTION OF EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. The embodiments described below do not unduly limit the contents of the present invention described in the claims. In addition, not all of the configurations described below are essential constituent requirements of the present invention.

1. 1. First embodiment 1.1. Semiconductor Device First, the semiconductor device according to the first embodiment will be described with reference to the drawings. FIG. 1 is a plan view schematically showing the semiconductor element 100 according to the first embodiment. 2 is a cross-sectional view taken along line II-II in FIG. 1 schematically showing the semiconductor element 100 according to the first embodiment. 3 is a cross-sectional view taken along the line II-II in FIG. 1 schematically showing the semiconductor element 100 according to the first embodiment, and is an enlarged view of a region A surrounded by a broken line in FIG. 4 is a cross-sectional view taken along the line IV-IV in FIG. 1 schematically showing the semiconductor element 100 according to the first embodiment.

  For convenience, in FIG. 1, the lid body 60 is seen through and the insulating layer 40 is omitted. In FIG. 2, the adhesion layer 32, the silicide layer 34, and the insulating layer 40 are omitted. 1 to 4 and FIGS. 5 to 13 shown below, the X axis, the Y axis, and the Z axis are illustrated as three axes orthogonal to each other.

  Hereinafter, a case where the semiconductor element 100 is an acceleration sensor element (capacitive MEMS acceleration sensor element) that detects acceleration in the horizontal direction (X-axis direction) will be described.

  As shown in FIGS. 1 to 4, the semiconductor element 100 includes an insulating substrate 10, a contact portion 30, a silicide layer 34, and a silicon body 80. The silicon body 80 can have fixed portions 81 and 82, connecting portions 84 and 85, a movable portion 86, a movable electrode portion 87, and fixed electrode portions 88 and 89. Further, the semiconductor element 100 can include wirings 20, 22, 24, an adhesion layer 32, an insulating layer 40, connection terminals 50, 52, 54, and a lid body 60.

  The material of the insulating substrate 10 is, for example, glass. As shown in FIG. 2, the insulating substrate 10 has a first surface (specifically, an upper surface) 11 and a second surface (specifically, a lower surface) 12 opposite to the first surface 11. Yes. In the illustrated example, the first surface 11 faces the + Z axis direction, and the second surface 12 faces the −Z axis direction. A recess 13 is provided in the first surface 11. The first surface 11 is further provided with groove portions 14, 15 and 16.

A movable portion 86 and a movable electrode portion 87 of the silicon body 80 are arranged above the recess 13 (+ Z axis direction side). The concave portion 13 allows the movable portion 86 and the movable electrode portion 87 to move in a desired direction without being obstructed by the insulating substrate 10. The planar shape of the recess 13 (the shape when viewed from the Z-axis direction) is not particularly limited, but is rectangular in the example shown in FIG.

  As shown in FIG. 1, the groove 14 is provided along the outer periphery of the recess 13 in a plan view (as viewed from the Z-axis direction). The groove 14 extends from the inside to the outside of the cavity 62 surrounded by the insulating substrate 10 and the lid body 60. The groove part 14 has a planar shape corresponding to the planar shape of the wiring 20 and the connection terminal 50, for example.

  The groove 15 is provided along the outer periphery of the recess 13 in plan view. In the example shown in FIG. 1, the groove portion 15 is provided outside the groove portion 14 and is provided so as to surround the groove portion 14. The groove portion 15 extends from the inside to the outside of the cavity 62. For example, the groove 15 has a planar shape corresponding to the planar shapes of the wiring 22 and the connection terminal 52.

  The groove portion 16 extends from the inside to the outside of the cavity 62. The groove portion 16 has, for example, a planar shape corresponding to the planar shapes of the wiring 24 and the connection terminal 54.

  The wiring 20 is provided in the groove 14. More specifically, the wiring 20 is provided on the bottom surface (the surface of the insulating substrate 10 that defines the groove portion 14) 14 a of the groove portion 14. As shown in FIG. 3, the wiring 20 is electrically connected to the first fixed electrode portion 88 of the silicon body 80 via the adhesion layer 32, the contact portion 30, and the silicide layer 34.

  The wiring 22 is provided in the groove 15. More specifically, the wiring 22 is provided on the bottom surface 15 a of the groove portion 15. The wiring 22 is electrically connected to the second fixed electrode portion 89 of the silicon body 80 through the adhesion layer 32, the contact portion 30, and the silicide layer 34.

  The wiring 24 is provided in the groove 16. More specifically, the wiring 24 is provided on the bottom surface 16 a of the groove 16. As shown in FIG. 4, the wiring 24 is electrically connected to the first fixing portion 81 of the silicon body 80 via the adhesion layer 32, the contact portion 30, and the silicide layer 34.

  The thickness (size in the Z-axis direction) of the wirings 20, 22, and 24 is, for example, 10 nm or more and 1 μm or less. The materials of the wirings 20, 22, and 24 are, for example, ITO (Indium Tin Oxide), FTO (Fluorine-doped Tin Oxide), zinc oxide doped with gallium, aluminum, gold, platinum, titanium, tungsten, chromium, and the like. . When a transparent electrode material such as ITO is used as the wirings 20, 22, and 24, when the insulating substrate 10 is transparent, for example, inspection of foreign matters that may occur on the wirings 20, 22, and 24 is performed. By observing from the 2nd surface 12 side of the insulated substrate 10, it can carry out simply. When a transparent electrode material such as ITO is not used as the wirings 20, 22, and 24, the inside of the groove portions 14, 15, and 16 cannot be observed, and it may be difficult to ensure quality.

  The contact part 30 is provided in the groove parts 14, 15 and 16 in a plan view. In the illustrated example, the contact portion 30 is provided in the groove portions 14, 15, and 16 and is electrically connected to the silicon body 80. The contact part 30 is provided on the wirings 20, 22, 24 via the adhesion layer 32. More specifically, the contact part 30 is provided between the wiring 20 and the first fixed electrode part 88, between the wiring 22 and the second fixed electrode part 89, and between the wiring 24 and the first fixed part 81. It has been. The material of the contact part 30 is, for example, platinum. The contact part 30 is, for example, a platinum bump. The thickness of the contact part 30 is, for example, 10 nm or more and 1 μm or less.

  The adhesion layer 32 is provided between the wirings 20, 22, 24 and the contact part 30. The material of the adhesion layer 32 is, for example, titanium, titanium nitride, titanium tungsten, or the like. The thickness of the adhesion layer 32 is, for example, about 10 nm. The adhesion layer 32 can increase the adhesion between the wiring 20, 22, 24 and the contact portion 30.

  The silicide layer 34 is provided between the silicon body 80 and the contact portion 30, and connects the silicon body 80 and the contact portion 30. More specifically, the silicide layer 34 is formed between the first fixed electrode portion 88 and the contact portion 30, between the second fixed electrode portion 89 and the contact portion 30, and between the first fixed portion 81 and the contact portion 30. It is provided between.

  The silicide layer 34 is formed by the reaction of silicon of the silicon body 80 (silicon of the silicon substrate 80a to be the silicon body 80) and the substance of the contact portion 30. More specifically, when the silicon substrate 80a (see FIG. 8) to be the silicon body 80 and the insulating substrate 10 are anodic bonded, the silicon of the silicon substrate 80a reacts with the platinum of the contact portion 30 to thereby form silicide. Layer 34 is formed. As the silicide layer 34, a platinum silicide layer can be used. The thickness of the silicide layer 34 is not particularly limited, and is appropriately determined depending on the thickness of the contact layer 30 and the conditions (temperature, time) of anodic bonding, and is, for example, 1 nm or more and 1 μm or less.

  The insulating layer 40 is provided so as to cover a part of the wiring 20, 22, 24. More specifically, the insulating layer 40 is provided so as to avoid the regions of the wirings 20, 22, and 24 where the contact portions 30 are formed. As shown in FIG. 4, when the connection terminals 50, 52, 54 are formed on the wirings 20, 22, 24, the insulating layer 40 is provided to avoid the region where the connection terminals 50, 52, 54 are formed. It has been. The material of the insulating layer 40 is, for example, silicon oxide. The thickness of the insulating layer 40 is, for example, not less than 10 nm and not more than 200 nm.

  The connection terminals 50, 52, and 54 are provided in the groove portions 14, 15, and 16, respectively. The connection terminals 50, 52, and 54 are connected to the wirings 20, 22, and 24, respectively. Therefore, the connection terminal 50 is electrically connected to the first fixed electrode portion 88. The connection terminal 52 is electrically connected to the second fixed electrode portion 89. The connection terminal 54 is electrically connected to the first fixing portion 81.

  The connection terminals 50, 52, and 54 are provided at positions that do not overlap the lid body 60 in plan view (outside the cavity 62). The material of the connection terminals 50, 52, and 54 is the same as that of the wirings 20, 22, and 24, for example.

  The lid 60 is placed (joined) on the insulating substrate 10 (on the first surface 11). The lid 60 has a container shape, and can be formed with a cavity 62 by being joined to the insulating substrate 10. For example, the gap (the gap in the groove 16) 2 between the insulating layer 40 and the lid 60 shown in FIG. 4 may be filled with an adhesive member (not shown) or the like. May be sealed in an inert gas (for example, nitrogen gas) atmosphere.

  The material of the lid 60 is, for example, silicon or glass. A method for joining the lid 60 and the insulating substrate 10 is not particularly limited. For example, when the material of the insulating substrate 10 is glass and the material of the lid 60 is silicon, the insulating substrate 10 and the lid 60 are Can be anodically bonded.

  The silicon body 80 is supported on the insulating substrate 10 (on the first surface 11). The silicon body 80 is accommodated in the cavity 62. The material of the silicon body 80 is silicon imparted with conductivity by being doped with impurities such as phosphorus and boron.

  The movable portion 86 of the silicon body 80 is displaced in the X-axis direction (+ X-axis direction or −X-axis direction) while elastically deforming the connecting portions 84 and 85 according to the change in acceleration in the X-axis direction. With such a displacement, the size of the gap between the movable electrode portion 87 and the first fixed electrode portion 88 and the size of the gap between the movable electrode portion 87 and the second fixed electrode portion 89 change. That is, with such a displacement, the capacitance between the movable electrode portion 87 and the first fixed electrode portion 88 and the capacitance between the movable electrode portion 87 and the second fixed electrode portion 89 are increased. Changes. Based on these changes in capacitance, the semiconductor element 100 can detect acceleration in the X-axis direction.

  The first fixing portion 81 and the second fixing portion 82 are joined to the first surface 11 of the insulating substrate 10. In the example shown in FIG. 1, the fixing portions 81 and 82 are provided so as to straddle the outer peripheral edge of the recess 13 in plan view. The planar shape of the fixing portions 81 and 82 is, for example, a rectangle.

  The first fixing portion 81 is provided across the groove portion 16. In the example shown in FIG. 1, a part of the first fixing portion 81 overlaps the groove portion 16. As shown in FIG. 4, the first fixing portion 81 is electrically connected to the connection terminal 54 via the silicide layer 34, the contact portion 30, the adhesion layer 32, and the wiring 24.

  As shown in FIG. 1, the movable portion 86 is provided between the first fixed portion 81 and the second fixed portion 82. In the example illustrated in FIG. 1, the planar shape of the movable portion 86 is a rectangle having a long side along the X axis.

  The connecting portions 84 and 85 connect the movable portion 86 and the fixed portions 81 and 82. More specifically, the first connecting portion 84 connects the movable portion 86 and the first fixed portion 81, and the second connecting portion 85 connects the movable portion 86 and the second fixed portion 82. The connecting portions 84 and 85 have a desired spring constant and are configured to be able to displace the movable portion 86 in the X-axis direction. In the example shown in FIG. 1, the first connecting portion 84 is configured by two beams 84 a and 84 b having a shape extending in the X-axis direction while reciprocating in the Y-axis direction. Similarly, the 2nd connection part 85 is comprised by two beams 85a and 85b which make the shape extended in a X-axis direction, reciprocating in a Y-axis direction.

  The movable electrode portion 87 is connected to the movable portion 86. The movable electrode portion 87 is provided on the movable portion 86. A plurality of movable electrode portions 87 are provided. The movable electrode portion 87 protrudes from the movable portion 86 in the + Y axis direction and the −Y axis direction, and is arranged in the X axis direction so as to form a comb shape.

  The fixed electrode portions 88 and 89 are provided on the insulating substrate 10 and are disposed to face the movable electrode portion 87. The fixed electrode portions 88 and 89 have one end joined to the first surface 11 of the insulating substrate 10 as a fixed end, and the other end extended to the movable portion 86 side as a free end. A plurality of fixed electrode portions 88 and 89 are provided. The fixed electrode portions 88 and 89 are alternately arranged in the X-axis direction so as to form a comb shape. The fixed electrode portions 88 and 89 are provided to face the movable electrode portion 87 with a space therebetween. In the example shown in FIG. 1, the first fixed electrode portion 88 is disposed on one side (−X axis direction side) of the movable electrode portion 87, and the second fixed electrode portion 89 is disposed on the other side (+ X axis direction side). Has been placed. For example, the area of the first fixed electrode portion 88 facing the movable electrode portion 87 is the same as the area of the second fixed electrode portion 89 facing the movable electrode portion 87.

  The first fixed electrode portion 88 is provided across the groove portions 14 and 15. In the example shown in FIG. 1, the first fixed electrode portion 88 intersects the groove portions 14 and 15. The first fixed electrode portion 88 is electrically connected to the connection terminal 50 via the silicide layer 34, the contact portion 30, the adhesion layer 32, and the wiring 20.

The second fixed electrode portion 89 is provided across the groove portions 14 and 15. In the example shown in FIG.
The second fixed electrode portion 89 intersects the groove portions 14 and 15. The second fixed electrode portion 89 is electrically connected to the connection terminal 52 via the silicide layer 34, the contact portion 30, the adhesion layer 32, and the wiring 22. The second fixed electrode portion 89 is electrically separated from the first fixed electrode portion 88.

  The fixed portions 81 and 82, the connecting portions 84 and 85, the movable portion 86, and the movable electrode portion 87 are integrally provided. A method for joining the fixed portions 81 and 82 and the fixed electrode portions 88 and 89 to the insulating substrate 10 is not particularly limited. For example, when the material of the insulating substrate 10 is glass, the fixed portions 81 and 82 and the fixed electrode portion are used. 88 and 89 and the insulating substrate 10 are joined by anodic bonding.

  In the semiconductor element 100, the capacitance between the movable electrode portion 87 and the first fixed electrode portion 88 can be measured by using the connection terminals 50 and 54. Furthermore, in the semiconductor element 100, the capacitance between the movable electrode portion 87 and the second fixed electrode portion 89 can be measured by using the connection terminals 52 and 54. As described above, in the semiconductor element 100, the capacitance between the movable electrode portion 87 and the first fixed electrode portion 88 and the capacitance between the movable electrode portion 87 and the second fixed electrode portion 89 are separately measured. In addition, the physical quantity (acceleration) can be detected with high accuracy based on the measurement results.

  More specifically, the electrostatic capacitance between the movable electrode portion 87 and the first fixed electrode portion 88 and the electrostatic capacitance between the movable electrode portion 87 and the second fixed electrode portion 89 are monitored. By detecting the differential, acceleration can be detected with high accuracy.

  Although the semiconductor element 100 has been described above as an acceleration sensor element that detects acceleration in the X-axis direction, the semiconductor element according to the present invention may be an acceleration sensor element that detects acceleration in the Y-axis direction. Alternatively, an acceleration sensor element that detects acceleration in the vertical direction (Z-axis direction) may be used. Further, the semiconductor element according to the present invention is not limited to an acceleration sensor element, and may be a gyro sensor element that detects angular velocity, for example.

  The semiconductor device 100 according to the first embodiment has, for example, the following characteristics.

  According to the semiconductor element 100, the silicide element 34 is provided between the silicon body 80 and the contact portion 30 and connects the silicon body 80 and the contact portion 30. Therefore, the silicon body 80 and the contact part 30 are electrically connected with low resistance. Thereby, the semiconductor element 100 can have high reliability.

  According to the semiconductor device 100, the silicide layer 34 is formed by the reaction between the silicon of the silicon body 80 and the material of the contact portion 30. That is, in the semiconductor element 100, since the silicon of the silicon body 80 and the substance of the contact portion 30 are chemically bonded to form the silicide layer 34, the silicon body is compared with the case where the silicon body 80 is merely in physical contact. 80 and the contact part 30 can be electrically connected with high strength. As a result, the semiconductor element 100 can have higher reliability.

  According to the semiconductor element 100, the material of the contact part 30 is platinum. Therefore, the contact part 30 is not easily oxidized, and the silicon body 80 and the contact part 30 are more reliably electrically connected with low resistance. Further, for example, before the silicon substrate 80a (see FIG. 8) and the contact portion 30 are electrically connected, a step of removing the oxide film formed on the contact portion is not necessary. As a result, the process can be simplified. For example, when the material of the contact portion is solder, the contact portion may be oxidized to increase the resistance. In addition, a process for removing the oxide film formed on the contact portion may be required.

  According to the semiconductor element 100, the material of the insulating substrate 10 is glass. Therefore, the insulating substrate 10 and the silicon body 80 (a silicon substrate that becomes the silicon body 80) can be anodically bonded. Furthermore, at the time of the anodic bonding, the silicide layer 34 can be formed by reacting the silicon of the silicon body 80 with the substance of the contact portion 30.

  According to the semiconductor element 100, the insulating layer 40 is provided so as to avoid a region of the wiring 20, 22, 24 where the contact part 30 is formed. Therefore, for example, foreign matter adheres on the wiring 20 and the wiring 20 and the second fixed electrode portion 89 are short-circuited, or foreign matter adheres on the wiring 22 and the wiring 22 and the first fixed electrode portion 88 are short-circuited. Can be prevented. As a result, the semiconductor element 100 can have higher reliability.

1.2. Semiconductor Device Manufacturing Method Next, a semiconductor device manufacturing method according to the first embodiment will be described with reference to the drawings. 5 to 8 are cross-sectional views schematically showing the manufacturing process of the semiconductor element 100 according to the first embodiment, and correspond to FIG.

  As shown in FIG. 5, an insulating substrate 10 provided with grooves 14, 15, 16 and recesses 13 (see FIGS. 2 and 4) is prepared. The concave portion 13 and the groove portions 14, 15, and 16 are formed by, for example, a photolithography technique and an etching technique.

  As shown in FIG. 6, wirings 20, 22, and 24 are formed in the groove portions 14, 15, and 16, respectively. The wirings 20, 22, and 24 are formed by, for example, film formation by a sputtering method, a CVD (Chemical Vapor Deposition) method, or the like, and patterning by a photolithography technique and an etching technique.

  Next, avoiding the region where the contact part 30 is formed (the region where the adhesion layer 32 is formed) and the region where the connection terminals 50, 52, 54 are formed, so as to cover the wirings 20, 22, 24, An insulating layer 40 is formed. The insulating layer 40 is formed by film formation by a CVD method and patterning by a photolithography technique and an etching technique.

  Next, connection terminals 50, 52, and 54 (see FIG. 1) are formed on the wirings 20, 22, and 24, respectively. 50, 52, and 54 are formed by the same method as the wirings 20, 22, and 24, for example.

  As shown in FIG. 7, an adhesion layer 32 is formed on the wirings 20, 22, and 24. The adhesion layer 32 is formed by, for example, the same method as the wirings 20, 22, and 24.

  Next, the contact part 30 is formed on the adhesion layer 32. The contact portion 30 is formed by, for example, film formation by sputtering, and patterning by photolithography technology and etching technology. The contact portion 30 is formed so as to have a protruding portion 31 that protrudes upward (+ Z-axis direction side) from the first surface 11 of the insulating substrate 10. That is, the contact portion 30 is formed so that the total T of the thickness of the wiring 20, the thickness of the adhesion layer 32, and the thickness of the contact portion 30 is larger than the depth D of the groove portion 14. Similarly, the contact portion 30 is formed so that the sum of the thickness of the wiring 22, the thickness of the adhesion layer 32, and the thickness of the contact portion 30 is larger than the depth of the groove portion 15. Further, the contact portion 30 is formed so that the total of the thickness of the wiring 24, the thickness of the adhesion layer 32, and the thickness of the contact portion 30 is larger than the depth of the groove portion 16. Although not shown, the contact portion 30 may be formed on the silicon substrate 80a (see FIG. 8).

  As shown in FIG. 8, a silicon substrate 80a is prepared, and the silicon substrate 80a is placed on the insulating substrate 10 so that the contact portion 30 and the silicon substrate 80a are in contact with each other. Next, the insulating substrate 10 and the silicon substrate 80a are bonded. More specifically, the first surface 11 of the insulating substrate 10 and the third surface 80b (surface facing the −Z axis direction in the illustrated example) 80b of the silicon substrate 80a are anodically bonded. During the anodic bonding, the silicon of the silicon substrate 80a diffuses into the contact portion 30, and the substance of the contact portion 30 (specifically, platinum) diffuses into the silicon substrate 80a. Then, the silicon of the silicon substrate 80a and the platinum of the contact portion 30 react to form a silicide layer (platinum silicide layer) 34.

  As shown in FIGS. 2 and 3, the silicon substrate 80a is ground by, for example, a grinding machine to form a thin film, and then patterned into a desired shape to form a silicon body 80. The patterning is performed by a photolithography technique and an etching technique (dry etching), and a Bosch method can be used as a more specific etching technique. In this step, the fixed portions 81 and 82, the connecting portions 84 and 85, the movable portion 86, and the movable electrode portion 87 can be integrally formed by patterning (etching) the silicon substrate 80a.

  As shown in FIG. 2, the lid body 60 is bonded to the insulating substrate 10, and the silicon body 80 is accommodated in the cavity 62 formed by the insulating substrate 10 and the lid body 60. Joining of the insulating substrate 10 and the lid 60 is performed using, for example, anodic bonding or an adhesive. By performing this step in an inert gas atmosphere, the cavity 62 can be filled with an inert gas.

  Through the above steps, the semiconductor element 100 according to the first embodiment can be manufactured.

  According to the method for manufacturing the semiconductor element 100, when the insulating substrate 10 and the silicon substrate 80a are anodic bonded, the silicon of the silicon substrate 80a reacts with the substance of the contact portion 30 to form the silicide layer 34. it can. Therefore, the process can be simplified as compared with the case where the step of bonding the insulating substrate and the silicon substrate and the step of forming the silicide layer are performed separately.

  According to the method for manufacturing the semiconductor element 100, the contact portion 30 is formed so as to have the protruding portion 31 protruding upward from the first surface 11 of the insulating substrate 10. Therefore, the silicon substrate 80a and the contact part 30 can be reliably brought into contact with each other, and the silicon of the silicon substrate 80a and the substance of the contact part 30 can be reacted.

1.3. First Modification Example of Semiconductor Element Next, a semiconductor element according to a first modification example of the first embodiment will be described with reference to the drawings. FIG. 9 is a cross-sectional view schematically showing a semiconductor element 200 according to a first modification of the first embodiment, and corresponds to FIG. Hereinafter, in the semiconductor element 200 according to the first modification of the first embodiment, differences from the example of the semiconductor element 100 according to the first embodiment will be described, and description of similar points will be omitted.

  In the semiconductor element 100, as shown in FIG. 3, the contact portion 30 made of, for example, platinum is formed on the adhesion layer 32.

On the other hand, in the semiconductor element 200, as shown in FIG. 9, the connection metal 36 is provided on the adhesion layer 32, and the contact portion 30 is provided on the connection metal 36. The material of the connection metal 36 is, for example, gold or aluminum. As for the Young's modulus of the connection metal 36, the Young's modulus of the contact part 30 is also small. The connection metal 36 may be a bump. The connection metal 36 is formed by, for example, a plating method or a sputtering method. The wirings 20, 22, and 24 are electrically connected to the silicon body 80 through the adhesion layer 32, the connection metal 36, the contact portion 30, and the silicide layer 34.

  According to the semiconductor element 200, the Young's modulus of the connection metal 36 is smaller than the Young's modulus of the contact portion 30, and the connection metal 36 is easily deformed. Therefore, while the connection metal 36 is crushed, the insulating substrate 10 and the silicon substrate 80a Can be anodically bonded (see FIG. 8). That is, even when the thickness of the protruding portion 31 of the contact portion 30 is large (see FIG. 7), the connection metal 36 is crushed, so that the eleventh surface of the insulating substrate 10 and the third surface of the silicon body 80 (the first surface of the silicon substrate 80a (3 side) The insulating substrate 10 and the silicon body 80 (silicon substrate 80a) can be anodically bonded without forming a gap between them. Therefore, it is possible to anodic-bond the insulating substrate 10 and the silicon body 80 more reliably while ensuring the electrical connection between the contact portion 30 and the silicon body 80.

1.4. Second Modification Example of Semiconductor Element Next, a semiconductor element according to a second modification example of the first embodiment will be described with reference to the drawings. FIG. 10 is a cross-sectional view schematically showing a semiconductor element 300 according to the second modification of the first embodiment, and corresponds to FIG. Hereinafter, in the semiconductor element 300 according to the second modified example of the first embodiment, differences from the example of the semiconductor element 100 according to the first embodiment will be described, and description of similar points will be omitted.

  In the semiconductor element 100, as shown in FIG. 3, the insulating layer 40 is provided in the groove portions 14, 15, and 16.

  On the other hand, in the semiconductor element 300, as shown in FIG. 10, the insulating layer 40 is provided in the groove portions 14, 15, 16 and on the first surface 11 of the insulating substrate 10. That is, the insulating layer 40 is provided between the insulating substrate 10 and the silicon body 80. The fourth surface (surface facing the + Z axis direction) 41 of the insulating layer 40 is in contact with the third surface 80 b of the silicon body 80.

  According to the semiconductor element 300, even when the protrusion 31 of the contact portion 30 is thick, the insulating layer 40 causes the first surface 11 of the insulating substrate 10 and the third surface of the silicon body 80 (the third surface of the silicon substrate 80a). The insulating substrate 10 and the silicon body 80 (silicon substrate 80a) can be anodically bonded without forming a gap between the surface 80b. Therefore, it is possible to anodic-bond the insulating substrate 10 and the silicon body 80 more reliably while ensuring the electrical connection between the contact portion 30 and the silicon body 80. If the thickness of the insulating layer 40 is 200 nm or less, the insulating substrate 10 and the silicon body 80 can be anodically bonded even if the insulating layer 40 is provided between the insulating substrate 10 and the silicon body 80. . Further, in a state before bonding the insulating substrate 10 and the silicon substrate 80a, for example, the contact portion 30 protruding upward (+ Z-axis direction) from the fourth surface 41 of the insulating layer 40 depending on the thickness of the insulating layer 40. The thickness can be adjusted.

2. Second Embodiment 2.1. Semiconductor Device Next, a semiconductor device according to a second embodiment will be described with reference to the drawings. FIG. 11 is a cross-sectional view schematically showing the semiconductor element 400 according to the second embodiment, and corresponds to FIG. Hereinafter, in the semiconductor element 400 according to the second embodiment, points different from the example of the semiconductor element 100 according to the first embodiment will be described, and description of similar points will be omitted.

  In the semiconductor element 100, as shown in FIGS. 3 and 4, the portions of the bottom surfaces 14a, 15a, and 16a that overlap the silicon body 80 are flat surfaces.

  On the other hand, in the semiconductor element 400, as shown in FIG. 11, the convex portions 17 are provided on the bottom surfaces 14a, 15a, and 16a, respectively.

  As shown in FIG. 11, the convex part 17 is provided in the groove part 14 at a position overlapping the first fixed electrode part 88. Further, the convex portion 17 is provided in the groove portion 15 at a position overlapping the second fixed electrode portion 89. Further, the convex portion 17 is provided in the groove portion 16 at a position overlapping the first fixing portion 81.

  The height H of the convex part 17 is smaller than the depth D of the groove part 14, as shown in FIG. Similarly, the height of the convex portion 17 is smaller than the depth of the groove portions 15 and 16. The convex portion 17 is provided integrally with the insulating substrate 10.

  In the semiconductor element 400, the adhesion layer 32 is provided on the bottom surfaces 14a, 15a, and 16a. The adhesion layer 32 can increase the adhesion between the wiring 20, 22, 24 and the insulating substrate 10.

  The wiring 20 is provided on the adhesion layer 32 as shown in FIG. The wiring 20 extends to the top surface (upper surface) 17 a of the convex portion 17 and is provided between the silicon body 80 and the convex portion 17. A silicide layer 34 is provided at the interface between the silicon body 80 and the wiring 20. The wiring 20 is provided integrally with the contact portion 30. A portion of the wiring 20 provided above the convex portion 17 is a contact portion 30. That is, the contact portion 30 is provided between the silicon body 80 (more specifically, the first fixed electrode portion 88) and the convex portion 17. By providing the contact portion 30 above the convex portion 17, the wiring 20 can be electrically connected to the first fixed electrode portion 88 through the silicide layer 34. The material of the wiring 20 is, for example, platinum.

  Similarly, the wirings 22 and 24 are provided on the adhesion layer 32. The wirings 22 and 24 extend to the top surface (upper surface) 17 a of the convex portion 17 and are provided between the silicon body 80 and the convex portion 17. A silicide layer 34 is provided at the interface between the silicon body 80 and the wirings 22 and 24. The wirings 22 and 24 are provided integrally with the contact part 30. Of the wirings 22 and 24, the portions provided above the convex portions 17 are contact portions 30. That is, the contact part 30 is provided between the first fixed electrode part 88 and the convex part 17 and between the first fixed part 81 and the convex part 17. Since the contact portion 30 is provided above the convex portion 17, the wirings 22 and 24 can be electrically connected to the silicon body 80 via the silicide layer 34. The material of the wirings 22 and 24 is, for example, platinum.

  According to the semiconductor element 400, the silicon body 80 and the wirings 20, 22, and 24 are electrically connected with low resistance by the silicide layer 34. As a result, the semiconductor element 400 can have high reliability.

  According to the semiconductor element 400, the material of the wirings 20, 22, and 24 is platinum. Therefore, the wirings 20, 22, and 24 are not easily oxidized, and the silicon body 80 and the wirings 20, 22, and 24 are more reliably electrically connected with low resistance. Further, for example, the process of removing the oxide film formed on the wiring becomes unnecessary, so that the process can be simplified.

According to the semiconductor element 400, the position of the contact part 30 can be determined by the position of the convex part 17. The convex portion 17 can be easily formed with high positional accuracy by a photolithography technique and an etching technique as will be described later. Therefore, for example, the contact portion 30 of the semiconductor element 400 can have higher positional accuracy than a case where a contact portion is separately formed between the wiring and the silicon body without forming the convex portion.

  According to the semiconductor element 400, the height of the convex portion 17 is smaller than the depth of the groove portions 14, 15, and 16. Therefore, a gap is provided between the first surface 11 of the insulating substrate 10 and the third surface of the silicon body 80 (the third surface of the silicon substrate 80a) 80b while ensuring electrical connection between the contact portion 30 and the silicon body 80. Can be prevented from being formed. Thereby, the insulating substrate 10 and the silicon body 80 (silicon substrate 80a) can be anodically bonded more reliably. For example, when the height of the convex portion is equal to or greater than the depth of the groove portion, a gap is formed between the first surface of the insulating substrate and the third surface of the silicon body depending on the thickness of the contact portion, and the insulating substrate and silicon The body may not be anodically bonded.

  According to the semiconductor element 400, the convex portion 17 is provided integrally with the insulating substrate 10. Therefore, as will be described later, in the step of forming the groove portions 14, 15, 16, the convex portions 17 can be simultaneously formed. As a result, the process can be simplified.

2.2. Semiconductor Device Manufacturing Method Next, a semiconductor device manufacturing method according to the second embodiment will be described with reference to the drawings. Hereinafter, in the method for manufacturing the semiconductor element 400 according to the second embodiment, points different from the example of the method for manufacturing the semiconductor element 100 according to the first embodiment will be described, and description of similar points will be omitted.

  As shown in FIG. 11, the recessed part 13, the groove parts 14, 15, and 16 and the convex part 17 are formed. The concave portion 13, the groove portions 14, 15, 16, and the convex portion 17 are formed by, for example, a photolithography technique and an etching technique. More specifically, although not shown in the figure, first, depressions that become the grooves 14, 15, and 16 are formed, and a mask layer is formed on the bottom surface of the depressions. Next, by etching using the mask layer as a mask, the groove portions 14, 15, and 16 provided with the convex portions 17 can be formed.

  Next, the adhesion layer 32 is formed on the bottom surfaces 14 a, 15 a, and 16 a, and the wirings 20, 22, and 24 having the contact portions 30 are formed on the adhesion layer 32.

  The subsequent steps are basically the same as the example of the method for manufacturing the semiconductor element 100 according to the first embodiment.

2.3. Modified Example of Semiconductor Element Next, a semiconductor element according to a modified example of the second embodiment will be described with reference to the drawings. FIG. 12 is a cross-sectional view schematically showing a semiconductor element 500 according to a modification of the second embodiment, and corresponds to FIG. Hereinafter, in the semiconductor element 500 according to the modified example of the second embodiment, differences from the example of the semiconductor element 400 according to the second embodiment will be described, and description of similar points will be omitted.

  In the semiconductor element 400, as shown in FIG. 11, the height of the convex portion 17 was smaller than the depth of the groove portions 14, 15, and 16.

  On the other hand, in the semiconductor element 500, the height H of the convex portion 17 is the same as the depth D of the groove portion 14, as shown in FIG. Similarly, the height of the convex portion 17 is the same as the depth of the groove portions 15 and 16.

In the semiconductor element 500, as shown in FIG. 12, the insulating layer 40 is provided in the groove portions 14, 15, 16 and on the first surface 11 of the insulating substrate 10. That is, the insulating layer 40 is provided between the insulating substrate 10 and the silicon body 80. The fourth surface (surface facing the + Z axis direction) 41 of the insulating layer 40 is in contact with the third surface 80 b of the silicon body 80.

  Here, FIG. 13 is a cross-sectional view schematically showing the manufacturing process of the semiconductor element 500, and is a cross-sectional view showing a state before the silicon substrate 80 a (see FIG. 8) is bonded to the insulating substrate 10.

  According to the semiconductor element 500, as described above, the height of the convex portion 17 is the same as the depth of the groove portions 14, 15, and 16. Therefore, as shown in FIG. 13, in the state before the silicon substrate 80 a is bonded to the insulating substrate 10, the entire contact portion 30 protrudes upward (+ Z axis direction) from the first surface 11 of the insulating substrate 10. It becomes the protrusion part 31. Thereby, the silicon substrate 80a and the contact part 30 can be brought into contact with each other more reliably, and the silicon of the silicon substrate 80a, the contact part 30 and the substance can be reacted.

  Further, in the semiconductor element 500, the gap between the first surface 11 of the insulating substrate 10 and the third surface of the silicon body 80 (the third surface of the silicon substrate 80a) 80b is controlled by controlling the thickness of the insulating layer 40. Can be prevented from being formed. Thereby, the insulating substrate 10 and the silicon body 80 (silicon substrate 80a) can be anodically bonded more reliably.

  As shown in FIG. 12, the insulating substrate 510 may be configured by the insulating substrate 10 and the insulating layer 40, and the contact portion 30 may be provided in a groove 514 provided in the insulating substrate 510.

3. Third Embodiment Next, an electronic apparatus according to a third embodiment will be described with reference to the drawings. An electronic apparatus according to the third embodiment includes a semiconductor element according to the present invention. Below, the electronic device containing the semiconductor element 100 is demonstrated as a semiconductor element which concerns on this invention.

  FIG. 14 is a perspective view schematically showing a mobile (or notebook) personal computer 1100 as an electronic apparatus according to the third embodiment.

  As shown in FIG. 14, a personal computer 1100 includes a main body portion 1104 having a keyboard 1102 and a display unit 1106 having a display portion 1108. The display unit 1106 has a hinge structure portion with respect to the main body portion 1104. It is supported so that rotation is possible.

  Such a personal computer 1100 incorporates a semiconductor element 100.

  FIG. 15 is a perspective view schematically showing a mobile phone (including PHS) 1200 as an electronic apparatus according to the third embodiment.

  As shown in FIG. 15, the cellular phone 1200 includes a plurality of operation buttons 1202, an earpiece 1204, and a mouthpiece 1206, and a display unit 1208 is disposed between the operation buttons 1202 and the earpiece 1204. .

  Such a cellular phone 1200 incorporates the semiconductor element 100.

  FIG. 16 is a perspective view schematically showing a digital still camera 1300 as an electronic apparatus according to the third embodiment. In addition, in FIG. 16, the connection with an external apparatus is also shown simply.

  Here, a normal camera sensitizes a silver halide photographic film with a light image of a subject, whereas a digital still camera 1300 photoelectrically converts a light image of a subject with an image sensor such as a CCD (Charge Coupled Device). An imaging signal (image signal) is generated.

  A display unit 1310 is provided on the back of a case (body) 1302 in the digital still camera 1300, and is configured to display based on an imaging signal from the CCD. The display unit 1310 displays an object as an electronic image. Functions as a viewfinder.

  A light receiving unit 1304 including an optical lens (imaging optical system), a CCD, and the like is provided on the front side (the back side in the drawing) of the case 1302.

  When the photographer confirms the subject image displayed on the display unit 1310 and presses the shutter button 1306, the CCD image pickup signal at that time is transferred and stored in the memory 1308.

  In the digital still camera 1300, a video signal output terminal 1312 and an input / output terminal 1314 for data communication are provided on the side surface of the case 1302. A television monitor 1430 is connected to the video signal output terminal 1312 and a personal computer 1440 is connected to the input / output terminal 1314 for data communication, if necessary. Further, the imaging signal stored in the memory 1308 is output to the television monitor 1430 or the personal computer 1440 by a predetermined operation.

  Such a digital still camera 1300 incorporates a semiconductor element 100.

  Since the electronic devices 1100, 1200, and 1300 as described above include the semiconductor element 100, they can have high reliability.

  Note that the electronic device including the semiconductor element 100 includes, for example, an ink jet type discharge in addition to the personal computer (mobile personal computer) shown in FIG. 14, the mobile phone shown in FIG. 15, and the digital still camera shown in FIG. Devices (for example, inkjet printers), laptop personal computers, televisions, video cameras, video tape recorders, various navigation devices, pagers, electronic notebooks (including those with communication functions), electronic dictionaries, calculators, electronic game machines, head-mounted displays , Word processor, workstation, video phone, security TV monitor, electronic binoculars, POS terminal, medical equipment (eg, electronic thermometer, blood pressure monitor, blood glucose meter, electrocardiogram measuring device, ultrasonic diagnostic device, electronic endoscope), fish school Machine Various measuring instruments, gauges (e.g., vehicles, aircraft, rockets, instruments and a ship), attitude control such as a robot or a human body, can be applied to a flight simulator.

  The above-described embodiments and modifications are merely examples, and the present invention is not limited to these. For example, it is possible to appropriately combine each embodiment and each modification.

The present invention includes configurations that are substantially the same as the configurations described in the embodiments (for example, configurations that have the same functions, methods, and results, or configurations that have the same objects and effects). In addition, the invention includes a configuration in which a non-essential part of the configuration described in the embodiment is replaced. In addition, the invention includes a configuration that achieves the same effect as the configuration described in the embodiment or a configuration that can achieve the same object. Further, the invention includes a configuration in which a known technique is added to the configuration described in the embodiment.

DESCRIPTION OF SYMBOLS 2 ... Air gap, 10 ... Insulating substrate, 11 ... 1st surface, 12 ... 2nd surface, 13 ... Recessed part, 14 ... Groove part, 14a ... Bottom surface, 15 ... Groove part, 15a ... Bottom surface, 16 ... Groove part, 16a ... Bottom surface, 17 ... convex part, 17a ... top surface, 20, 22, 24 ... wiring, 30 ... contact part, 31 ... projecting part, 32 ... adhesion layer, 34 ... silicide layer, 36 ... connecting metal, 40 ... insulating layer, 41st Four surfaces, 50, 52, 54 ... connection terminal, 60 ... lid, 62 ... cavity, 80 ... silicon body, 80a ... silicon substrate, 80b ... third surface, 81 ... first fixing portion, 82 ... second fixing , 84 ... connecting part, 84 a and 84 b ... beam, 85 ... connecting part, 85 a and 85 b ... beam, 86 ... movable part, 87 ... movable electrode part, 88 ... first fixed electrode part, 89 ... second fixed electrode part , 100, 200, 300, 400, 500 ... semiconductor element, 510 ... insulation Plate, 514 ... Groove, 1100 ... Personal computer, 1102 ... Keyboard, 1104 ... Main body, 1106 ... Display unit, 1108 ... Display unit, 1200 ... Mobile phone, 1202 ... Operation buttons, 1204 ... Earpiece, 1206 ... Mouthpiece DESCRIPTION OF SYMBOLS 1208 ... Display part, 1300 ... Digital still camera, 1302 ... Case, 1304 ... Light receiving unit, 1306 ... Shutter button, 1308 ... Memory, 1310 ... Display part, 1312 ... Video signal output terminal, 1314 ... Input / output terminal, 1430 ... TV monitor, 1440 ... Personal computer

Claims (10)

An insulating substrate provided with a groove,
A contact portion provided in the groove and electrically connected to the silicon body;
A silicide layer provided between the silicon body and the contact portion and connecting the silicon body and the contact portion;
Only including,
A convex portion is provided integrally with the insulating substrate in the groove portion,
The height of the convex part is smaller than the depth of the groove part,
The contact portion is a semiconductor element provided between the silicon body and the convex portion . In claim 1,
The silicide layer is formed by a reaction between silicon constituting the silicon body and a substance constituting the contact portion. In claim 1 or 2,
A semiconductor element, wherein the contact portion is made of platinum. In any one of Claims 1 thru | or 3,
Including wiring provided in the groove,
The semiconductor element, wherein the wiring is electrically connected to the silicon body via the contact portion and the silicide layer. In claim 4,
Provided in the groove portion, disposed between the contact portion and the wiring, including a connection metal using gold or aluminum,
The semiconductor device, wherein the wiring is electrically connected to the silicon body via the connection metal. An insulating substrate in which wiring is provided in the groove,
A silicon body provided across the groove,
A convex portion provided integrally with the insulating substrate in the groove portion and having a height smaller than the depth of the groove portion,
The wiring extends to the top surface of the convex portion and is provided between the silicon body and the convex portion,
A semiconductor element, wherein a silicide layer is provided at an interface between the silicon body and the wiring. In claim 6 ,
A semiconductor element, wherein the wiring material is platinum. In any one of Claims 1 thru | or 7 ,
A semiconductor element comprising an insulating layer provided between the insulating substrate and the silicon body. In any one of Claims 1 thru | or 8 ,
The silicon body is
Moving parts;
A movable electrode portion provided on the movable portion;
And a fixed electrode portion provided on the insulating substrate and disposed to face the movable electrode portion. It claims 1 to comprising a semiconductor device according to any one of 9, electronic apparatus.