JP6033251B2 - Manufacturing method of semiconductor device - Google Patents

Description

  The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method for manufacturing a semiconductor light emitting element that emits light from an end face.

  A process of forming a plurality of semiconductor elements on a main surface of a semiconductor wafer and dividing the semiconductor wafer into semiconductor chips on which the individual semiconductor elements are arranged by using a dicing method or cleavage of a single crystal constituting the semiconductor wafer. Widely used in the past. Here, the cleavage property means a property that the semiconductor wafer is easily broken along its crystal orientation.

  For example, a semiconductor light emitting device that emits light from an end face may affect the light emission characteristics if the end face is uneven. For this reason, it is preferable that the end surface of the semiconductor chip on which the semiconductor light emitting element is formed is a so-called mirror surface. Such a semiconductor light emitting device is usually separated into individual semiconductor chips by utilizing the cleavage property of a single crystal, and in this way, a semiconductor chip having a mirror end face can be obtained. In addition, when the semiconductor wafer is divided, the use of single crystal cleavage can improve the accuracy of the cutting position rather than using the dicing method. Can be controlled with high accuracy.

  A method for dividing a semiconductor wafer using the cleavage of a single crystal is as follows. First, a dummy pattern is formed on a main surface of a semiconductor wafer, particularly in a region away from a region where a regular semiconductor light emitting element is formed. Scratches are formed on the dummy pattern of the semiconductor wafer along a cleavage line that is a straight line having a single crystal cleavage property. Starting from this scratch, the semiconductor wafer is cleaved along a cleavage line which is its crystal plane. Therefore, if a pattern of a plurality of semiconductor light-emitting elements is formed in consideration of the cleavage line, each semiconductor light-emitting element has a highly accurate angle and position on the divided semiconductor chip by utilizing the cleavage property of the single crystal. Can be arranged to have.

  However, if the semiconductor wafer is divided by the above-described method using the cleavage property, a plurality of minute cracks extending in various directions are formed around the scratch that is the starting point of separation (cleavage). For this reason, the cleavage starting from the scratch may proceed in a direction different from the desired cleavage line (starting point deviation). This starting point deviation does not always continue in a direction different from the desired cleavage line as it is, and the cleavage position and direction may be corrected so as to be on the cleavage line parallel to the crystal orientation.

  Therefore, in order to correct the cleavage position and direction, for example, in Patent Document 1, a part of the cleavage line is formed in a dummy formation region separated from an element formation region in which a plurality of semiconductor element patterns are formed on the main surface of a semiconductor wafer. A dummy pattern is formed to include A cutout is formed in the dummy pattern. The cutout is opposed to sandwich a part of the cleavage line and extends in a direction along the cleavage line, and a cleavage line on the main surface. And a base extending from one of the pair of sides to the other of the pair of sides so as to intersect (orthogonally). In other words, the bottom of the notch intersects the cleavage line. In Patent Document 1, a scratch is formed at the bottom of the notch of the dummy pattern, and the semiconductor wafer is cleaved along the crystal plane (cleavage line) in the opening direction of the notch starting from the scratch. Thereby, even if the traveling direction of cleavage is shifted from the starting point, the traveling direction of cleavage is corrected along the dummy pattern.

JP 2009-105215 A

  The correction of the direction of progress of cleavage by the dummy pattern of Patent Document 1 is limited to a range of about several μm in the thickness direction from the main surface on which the dummy pattern of the semiconductor wafer is formed, and starts in a region deeper than that in the thickness direction. Cleavage proceeds in the shifted direction. For this reason, after passing the region where the dummy pattern is formed, most of the cleavage proceeds along the direction in which the entire region including the shallow region on the main surface side where the dummy pattern is formed is shifted again. That is, even if the method of Patent Document 1 is used, it can be said that the effect of correcting the cleavage direction is not sufficient.

  If the cleavage of the semiconductor wafer proceeds in a direction deviating from the cleavage line, the semiconductor light emitting element of the semiconductor chip formed by dividing the semiconductor wafer becomes a resonator length defect, and there is a variation in characteristics among individual semiconductor chips. In some cases, the size may increase or the characteristics may deteriorate. If the progress position and direction of cleavage greatly deviate from the position and direction to be originally cleaved, all the semiconductor chips formed by the cleavage in the cleavage direction have a cavity length defect, and the yield is greatly reduced. there is a possibility.

  The present invention has been made in view of the above-described problems, and the purpose thereof is to make the cleavage proceed in a position and direction closer to the cleavage line that should be originally cleaved even when the starting point is shifted during cleavage of the semiconductor wafer. It is an object of the present invention to provide a semiconductor device manufacturing method that can be corrected.

A manufacturing method of a semiconductor device according to an embodiment of the present invention includes the following steps.
First, a semiconductor wafer having a first main surface and a second main surface opposite to the first main surface is prepared. The semiconductor wafer includes an element formation region in which a plurality of semiconductor element patterns are formed, and a dummy formation region separated from the element formation region in plan view. A recess is formed on at least one of the first and second main surfaces in the dummy formation region so as to overlap with the cleavage line having the cleavage property of the semiconductor wafer. Scratches are formed on the first main surface. The semiconductor wafer is cleaved along the cleavage line starting from the scratch. Scratches are formed along a cleavage line in a part of the cleavage line where the recess is formed.

  According to the present invention, since the semiconductor substrate at the position where the recess is formed becomes thin due to the recess formed so as to overlap with the cleavage line, the semiconductor substrate is cleaved in the region where the recess is formed at or near the cleavage line. It becomes easy. For this reason, it can correct | amend so that the position and direction which the cleavage which the starting point shifted | deviated may approach the cleavage line which should be originally cleaved.

FIGS. 2A and 2B are a plan view (A) of a semiconductor wafer used in the method for manufacturing a semiconductor device and a side view (B) of the semiconductor wafer, showing a first step of the method for manufacturing a semiconductor device in Embodiment 1. FIG. 6 is a schematic cross sectional view showing a second step of the method for manufacturing the semiconductor device in the first embodiment. FIG. 6 is a schematic plan view showing a state of a semiconductor wafer in a third step of the method for manufacturing a semiconductor device in the first embodiment. FIG. 4 is a schematic plan view showing in detail a configuration of a region indicated by D1 in FIG. 3. FIG. 10 is a schematic cross sectional view showing a fourth step of the method for manufacturing the semiconductor device in the first embodiment. FIG. 10 is a schematic cross sectional view showing a fifth step of the method for manufacturing the semiconductor device in the first embodiment. It is a schematic plan view which shows the aspect in which the back surface recessed part formed in FIG. 6 is formed in a semiconductor wafer. It is a schematic plan view which shows in detail the structure of the area | region VIII enclosed with the dotted line in FIG. FIG. 9 is a schematic perspective view showing a sixth step of the method for manufacturing the semiconductor device in the first embodiment. 9 is a schematic cross-sectional view (A) along the XA-XA line in FIG. 9, a schematic cross-sectional view (B) along the XB-XB line in FIG. 9, and a schematic view along the XC-XC line in FIG. It is sectional drawing (C). It is a schematic plan view which shows the advancing direction of the cleavage line which should originally cleave, and the displacement cleavage line which cleaves the position shifted | deviated with respect to the cleavage line. FIG. 4 is a schematic plan view showing in detail a configuration formed in a region indicated by D1 in FIG. 3 in the second embodiment. FIG. 4 is a schematic plan view showing in detail a configuration formed in a region indicated by D1 in FIG. 3 in the third embodiment. FIG. 10 is a schematic plan view showing in detail a configuration formed in a region indicated by D1 in FIG. 3 in the fourth embodiment. FIG. 10 is a schematic plan view showing in detail a configuration formed in a region indicated by D1 in FIG. 3 in the fifth embodiment. In Embodiment 6, it is a schematic plan view which shows in detail the structure formed in the area | region shown by D1 in FIG. FIG. 10 is a schematic plan view showing in detail a configuration formed in a region indicated by D1 in FIG. 3 in the seventh embodiment. It is a schematic sectional drawing in the part which follows the XVIII-XVIII line of FIG. FIG. 29 is a schematic plan view showing a state of a semiconductor wafer in a first step of a method for manufacturing a semiconductor device in an eighth embodiment. FIG. 20 is a schematic plan view showing in detail the configuration of a region indicated by D2 in FIG. FIG. 29 is a schematic perspective view showing a second step of the method for manufacturing the semiconductor device in the eighth embodiment. 21 is a schematic cross-sectional view (A) in a portion along the line XXIIA-XXIIA in FIG. 21, a schematic cross-sectional view (B) in a portion along the line XXIIB-XXIIB in FIG. 21, and a schematic in a portion along the line XXIIC-XXIIC in FIG. It is sectional drawing (C). FIG. 20 is a schematic plan view showing in detail a configuration formed in a region indicated by D2 in FIG. 19 in the ninth embodiment. FIG. 20 is a schematic plan view showing in detail a configuration formed in a region indicated by D2 in FIG. 19 in the tenth embodiment. FIG. 20 is a schematic plan view showing in detail a configuration formed in a region indicated by D2 in FIG. 19 in the eleventh embodiment. FIG. 26 is a schematic cross-sectional view (A) in a portion along the line XXVIA-XXVIA in FIG. 25 and a schematic cross-sectional view (B) in a portion along the line XXVIB-XXVIB in FIG. FIG. 38 is a schematic plan view showing in detail a configuration formed in regions indicated by D1 and D2 in the twelfth embodiment. 27 is a schematic cross-sectional view (A) taken along the line XXVIIIA-XXVIIIA in FIG. 27, a schematic cross-sectional view (B) taken along the line XXVIIIB-XXVIIIB in FIG. 27, and a schematic view taken along the line XXVIIIC-XXVIIIC in FIG. It is sectional drawing (C).

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
(Embodiment 1)
A method of manufacturing a semiconductor chip on which a semiconductor light emitting element is formed according to the semiconductor device of the present embodiment will be described with reference to FIGS. In the following description, the cleavage of the semiconductor wafer in the cleavage line will be described as proceeding from the right side to the left side of the drawing (the semiconductor wafer is cleaved from the right side to the left side of the drawing).

  Referring to FIGS. 1A and 1B, first, a semiconductor wafer 11 made of, for example, a single crystal of silicon is prepared. The semiconductor wafer 11 has one (front side) main surface 11A (first main surface) and the other (back side) main surface 11B (second main surface) opposite to the one main surface 11A. Yes.

  Referring to FIG. 2, semiconductor wafer 11 includes an element formation region and a dummy formation region in plan view. The element formation region is a region where semiconductor light emitting elements 12 as a plurality of semiconductor element patterns are formed, and the dummy formation region is a region where a plurality of dummy patterns 13 are formed.

  The semiconductor light emitting element 12 is formed by a combination of a semiconductor layer, an insulating film layer, a metal layer, and the like, while the dummy pattern 13 is a process for forming a semiconductor layer, an insulating film layer, a metal layer, and the like constituting the semiconductor light emitting element 12. At the same time, the semiconductor light-emitting element 12 is preferably formed as the same layer as the semiconductor layer, the insulating film layer, the metal layer, and the like. In this case, as shown in FIG. 2, the dummy pattern 13 is formed simultaneously with the formation of the semiconductor layer and the like constituting the semiconductor light emitting element 12 by the normal photoengraving technique and etching using the photoresist PR as the photosensitive member. It may be formed. In this way, since the dummy pattern 13 can be formed using the process of forming the semiconductor light emitting element 12, the number of processes can be reduced.

  The dummy pattern 13 is formed on one main surface 11A of the semiconductor wafer 11 as a thin film such as a semiconductor layer. For this reason, the dummy pattern 13 is formed to have a step (thickness) with respect to the one main surface 11A.

  Referring to FIG. 3, for example, a rectangular element formation region is provided slightly to the left of the central portion of semiconductor wafer 11, and a dummy formation region is provided on the right side of the element formation region (near the right edge of semiconductor wafer 11). Provided. The dummy formation region is formed, for example, on one main surface 11A of the semiconductor wafer 11 at a position separated from the element formation region in plan view so as to be aligned with the element formation region. The dummy formation region is preferably formed in a region outside the element formation region and relatively close to the edge of the semiconductor wafer 11 in plan view.

  In the element formation region, a plurality of semiconductor light emitting elements 12 are formed, for example, arranged in a matrix. In the dummy formation region, a plurality of dummy patterns 13 are formed, for example, along either the row direction or the column direction in which the semiconductor light emitting elements 12 are arranged.

  The semiconductor wafer 11 has a cleavage line 15, which is a straight line extending in a direction that easily matches the crystal orientation and that is easy to cleave (indicating a direction that is easy to cleave). For example, in FIG. 3, the cleavage line 15 is assumed to extend parallel to the left-right direction of the semiconductor wafer 11. As the cleavage line 15, there are actually innumerable ones extending in the left-right direction of the semiconductor wafer 11, but in FIG. 3, several (four) of them are shown spaced apart from each other in the vertical direction of FIG. 3. Has been. In this specification, the cleavage line 15 focuses on the above-mentioned several lines, and is described as meaning a straight line that indicates a region that should be originally cleaved.

  The plurality of semiconductor light emitting elements 12 are formed on the semiconductor wafer 11 such that the row direction or the column direction in which the semiconductor light emitting elements 12 are arranged is substantially parallel or substantially perpendicular to the cleavage line 15. Therefore, the region between the pair of semiconductor light emitting elements 12 adjacent to each other in the vertical direction of FIG. 3 among the plurality of semiconductor light emitting elements 12 intersects with any of the plurality of semiconductor light emitting elements 12 arranged in the horizontal direction of FIG. One cleavage line 15 extends so that there is no. In other words, the semiconductor light-emitting element 12 disposed immediately above one cleavage line 15 in FIG. 3 and the semiconductor light-emitting element 12 disposed immediately below one cleavage line 15 in FIG. , Facing each other so as to sandwich the cleavage line 15.

  The same applies to the dummy pattern 13 so that the region between the pair of dummy patterns 13 adjacent to each other in the vertical direction in FIG. 3 does not intersect with any of the plurality of dummy patterns 13 arranged in the horizontal direction in FIG. In addition, one cleavage line 15 extends. In other words, the dummy pattern 13 disposed immediately above one cleavage line 15 in FIG. 3 and the dummy pattern 13 disposed immediately below one cleavage line 15 in FIG. It faces each other so as to sandwich the cleavage line 15.

  Referring to FIG. 4, a pair of dummy patterns 13 adjacent in the vertical direction in the region indicated by D <b> 1 in FIG. 3 are formed so as to face each other so as to sandwich cleavage line 15. The dummy pattern 13 in the present embodiment has, for example, a trapezoidal shape in a plan view, a pair of intersecting surface side edges 13b extending in a direction intersecting (substantially perpendicular) to the cleavage line 15 and the extension of the cleavage line 15. And a slope side 13c extending in a direction inclined so as to have an angle base in plan view with respect to the existing direction.

  The pair of dummy patterns 13 are formed so that the inclined side surfaces 13c face each other so as to sandwich the cleavage line 15 therebetween. Each slope side 13c has an interval between the sides 13b that is the end of the side (right side in FIG. 4) close to the starting point of cleavage, particularly with respect to the direction along the cleavage line 15 (left-right direction in FIG. 4). At the (first starting side end), it is wider than the opposite side (left side in FIG. 4), that is, the intersection side side 13b (first end side end) that is the end close to the end point of cleavage. It is formed as follows. As a result, the slope side 13 c has an angle α with respect to the cleavage line 15. In addition, not only the slope side 13c but also the first starting side and end side ends of the cleavage are referred to as side (crossing surface side 13b).

  The angle α of the slope side 13c with respect to the cleavage line 15 is preferably greater than 0 ° and less than 45 °. In the slope side 13c, the distance between the pair of dummy patterns 13 adjacent to each other in the vertical direction in FIG. 4 in the vertical direction in the figure becomes wider on the right side in the figure, that is, the starting side of the cleavage, and on the left side in the figure, that is, the end point of the cleavage. It is formed so as to narrow toward the side.

  5 and 6 show only the dummy formation region of FIG. Referring to FIG. 5, the other main surface 11 </ b> B of the semiconductor wafer 11 is ground to reduce the thickness of the semiconductor wafer 11. Referring to FIGS. 5 and 6, normal etching using hard mask HM formed on main surface 11B, for example, by a silicon insulating film as a processing mask, for the other main surface 11B after thinning is performed. Is made. When the semiconductor wafer 11 is partially removed from the main surface 11B toward the main surface 11A side and becomes thinner, a back surface recess 22 as a recess is formed in a part of the main surface 11B.

  Referring to FIGS. 7 and 8, back surface recess 22 has, for example, a rectangular planar shape, and at least a part of cleavage line 15 (particularly a part of the dummy formation region) extending between the pair of dummy patterns 13. And cleave line 15).

  Referring to FIG. 8, back surface recess 22 is formed in main surface 11 </ b> B so as to overlap with at least a part or the whole of a pair of dummy patterns 13 arranged in the vertical direction in a region indicated by D <b> 1 in FIG. 7 in plan view. Is formed. The back surface recess 22 is, for example, a pair of creeping side edges 22a extending along the extending direction of the cleavage line 15 and a pair of intersecting surface sides extending so as to intersect with the extending direction of the cleavage line 15. And a side 22b.

  The back surface concave portion 22 is formed in a region (at least part of) overlapping with a region between the pair of dummy patterns 13 (between the pair of dummy patterns 13) in plan view, particularly in the dummy formation region, The pair of dummy patterns 13 shown in FIG. 8 are preferably formed so as to overlap each of the inclined side surfaces 13c in plan view. In particular, each of the pair of dummy patterns 13 includes a region between the pair of dummy patterns 13 including a region sandwiched between the intersecting side edge 13b as the first starting side end. It is more preferable that the back surface concave portion 22 is formed so as to overlap with the region on the side (right side in the drawing) in plan view. However, in the present embodiment, the back surface recess 22 is formed in the entire region that overlaps the region sandwiched between the pair of dummy patterns 13 in plan view.

  Further, the back surface recess 22 is formed so as to straddle both the pair of dummy patterns 13 adjacent to each other in the vertical direction of FIG. 3, and at least partially overlaps the pair of dummy patterns 13 in plan view. It is preferable to be formed as follows. That is, in the present embodiment, the back surface recess 22 is formed so as to overlap at least a part of both the one slope side 13c and the other slope side 13c of the pair of dummy patterns 13. In other words, the back surface recess 22 has a dimension larger than the distance from one inclined side 13c to the other inclined side 13c of the pair of dummy patterns 13 in the direction intersecting the extending direction of the cleavage line 15. It has a width.

  Referring to FIG. 9, along cleavage line 15 (for example, cleavage line) along cleavage line 15 on one main surface 11 </ b> A (on the right side of the drawing serving as a starting point of cleavage) on cleavage line 15 in which back surface recess 22 is formed. Scratches 17 are formed so as to overlap (15). Here, the cleavage line 15 on one main surface 11A is substantially overlapped with the cleavage line 15 on the right side of FIG. 9, that is, on the cleavage starting point side of the dummy formation region and the region where the dummy pattern 13 and the back surface recess 22 are formed. A scratch 17 extending in the left-right direction in the figure is formed. The scratch 17 is formed, for example, by scribing along a desired cleavage line 15 using a diamond needle.

  As shown in FIG. 3, the semiconductor wafer 11 includes the scratch 17 using, for example, the blade 19, starting from the scratch 17 formed in the above manner and extending in the left-right direction in FIG. 3 (FIG. 9) along the cleavage line 15. Cleavage is performed along the cleavage line 15. Specifically, the blade 19 is pressed against the region indicated by D1 in FIG. 8 shown in FIG. 9, for example, from the other main surface 11B side. The blade 19 applies a load to the semiconductor wafer 11 from the other main surface 11B side toward the one main surface 11A side. Thereby, the semiconductor wafer 11 is cleaved along the cleavage line 15, which is a crystal orientation that is easy to cleave, starting from the scratch 17 in the region indicated by D 1. The cleavage of the semiconductor wafer 11 is performed in the direction along the main surfaces 11A and 11B from the right side to the left side of the semiconductor wafer 11 (region D1) in FIG. 9 and from the other main surface 11B side to the one main surface 11A side. It proceeds in both directions with the thickness direction. As a result, the semiconductor wafer 11 is divided into a plurality of semiconductor chips including the individual semiconductor light emitting elements 12.

Next, the effect of this Embodiment is demonstrated, referring FIGS. 9-11.
Referring to FIG. 10 (A), this is the left side of crack 17 in FIG. 9 (the direction in which cleavage progresses), but shows a cross-sectional aspect in the region on the right side of dummy pattern 13 and back surface recess 22. . Referring to FIG. 10B, this shows a cross-sectional aspect in the region where the dummy pattern 13 (slope side 13c) and back surface recess 22 (creeping side 22a) of FIG. 9 are formed. Referring to FIG. 10C, this shows a cross-sectional aspect in the region on the left side of the dummy pattern 13 and the back surface recess 22 in FIG. Therefore, the cleavage starting from the scratch 17 proceeds in the order of the region in FIG. 10A → the region in FIG. 10B → the region in FIG.

  Referring to FIGS. 10 and 11, if the cleavage proceeds along the cleavage line 15 from the scratch 17 (on the cleavage line 15 that overlaps the scratch 17), the cleavage is illustrated in FIGS. In any region of C), it proceeds linearly without departing from the cleavage line 15. In this case, the cleavage passes through the region between each of the pair of dummy patterns 13, and passes through the back surface recess 22 of the region, that is, the region where the semiconductor wafer 11 is thinned. Since the region where the semiconductor wafer 11 is thin is more easily cleaved than the thick region, the cleavage can easily proceed along the cleavage line 15 in the region where the back surface recess 22 and the cleavage line 15 overlap.

  Next, as in the case of the misaligned cleavage line 18 in FIG. 11, for example, the cleavage proceeds (shifts from the starting point) in a direction inclined with respect to the direction of the cleavage line 15 from the tip of the scratch 17 (left end portion in FIG. 11). think about. The shift cleavage line 18 slightly advances in a direction inclined with respect to the extending direction of the cleavage line 15 that overlaps with the tip of the scratch 17 (which should originally proceed), and then enters the cleavage line 15 in a direction parallel to the original cleavage line 15. On the other hand (for example, on the right side of FIG. 10A), a position shifted by several μm, for example, is advanced. The reason why the cleavage proceeds in the direction parallel to the cleavage line 15 in this way is that the cleavage line 15 traveling in the direction as described above exists innumerably in the entire region of the semiconductor wafer 11. FIG. 10A shows a shifted cleavage line 18 that runs parallel to the cleavage line 15 in this region.

  In the present embodiment, the intersection surface side 22b, which is the end (second start side end) near the starting point of cleavage of the back surface recess 22, is the first start side end of the dummy pattern 13. It exists on the origin side with respect to a certain crossing surface side 13b (see FIG. 9). For this reason, the shift cleavage line 18 reaches the back surface recess 22 before reaching the dummy pattern 13. However, even after reaching the back surface recess 22, the shift cleavage line 18 proceeds straight without changing the traveling direction.

  The distance between the cleavage line 15 and the shifted cleavage line 18 is smaller than the maximum distance (at the first starting side end) between each of the pair of dummy patterns 13 and the cleavage line 15 (which should originally proceed). In this case, the shift cleavage line 18 eventually reaches the slope side 13c of the dummy pattern 13. As described above, the dummy pattern 13 has a thickness with respect to the main surface 11A and is formed of a semiconductor layer, an insulating layer, and a metal layer that are difficult to cleave. For this reason, the displacement cleavage line 18 that has reached the slope side 13c has great resistance to ride on the dummy pattern 13 and proceed straight. Therefore, as shown in FIG. 9 and FIG. 10B, the entire shift direction of the semiconductor wafer 11 from the main surface 11A to the main surface 11B proceeds along the slope side 13c. Since the pair of slope side sides 13c are formed so that the distance between them becomes narrower as the cleavage progresses, the shifted cleavage line 18 approaches the cleavage line 15 by proceeding along the slope side 13c. Thus, the traveling direction is corrected.

  Referring to FIGS. 11 and 10C, in the region on the left side of the end of dummy pattern 13 on the end side, the shift cleavage line 18 is a cleavage that the entire semiconductor wafer 11 should proceed in the thickness direction. In a state where the traveling direction is corrected at a position close to the line 15, the traveling proceeds parallel to the cleavage line 15 without deviating in other directions. For this reason, the amount of displacement of the position of the displacement cleavage line 18 with respect to the cleavage line 15 is reduced, and the amount of displacement is within the range of dimensional errors allowed when the semiconductor light emitting element 12 is divided into individual chips (with the cleavage line 15 and (Within the distance in the vertical direction in the figure) with the first end side end.

  The shift cleavage line 18 with the corrected amount of shift can proceed straight and parallel to the cleavage line 15 without changing the traveling direction even after traveling to the end point side from the back surface recess 22.

  The effect of correcting the shift of the shift cleavage line 18 as described above is that, in particular, at least a part of a region overlapping in plan view with a region sandwiched between the pair of dummy patterns 13 (a region sandwiched between the pair of dummy patterns 13). Of particular note is that the back surface recess 22 is formed particularly in the region of the cleavage starting point. Further, the rear surface recess 22 is formed so as to straddle both of the pair of dummy patterns 13 so as to overlap with both of the pair of dummy patterns 13 in plan view. Since the semiconductor wafer 11 in the region overlapping 13c becomes thin, the shift cleavage line 18 can easily travel along the slope side 13c.

  In order to correct the shift cleavage line 18 so as to travel along the slope side 13c of the dummy pattern 13, and so that the shift cleavage line 18 travels within the region sandwiched between the pair of slope sides 13c. In particular, the back surface concave portion 22 (overlapping so as to straddle both the pair of dummy patterns 13) is formed so that the semiconductor wafer 11 in the region where the shift cleavage line 18 is desired to proceed, particularly on the starting side.

  In summary, the traveling direction of the misaligned cleavage line 18 can be corrected by the region where the dummy pattern 13 made of a material that is difficult to cleave is formed, and after the correction by the back surface concave portion 22 whose thickness is reduced so as to be easily cleaved. It is possible to further ensure that the cleavage proceeds in the traveling direction of the shift cleavage line 18.

  In order to make it possible to correct the traveling direction of the shift cleavage line 18 as described above, it is preferable to satisfy the following conditions. When the semiconductor wafer 11 is a (100) substrate, the cleavage lines 15 and 18 preferably travel in the [01-1] direction or [0-11] direction, and the crystal orientation is (0-1-1). It is preferable to be parallel to the surface. The thickness of the semiconductor wafer 11 in the thinned region where the back surface concave portion 22 is formed is 50 μm or less, and is substantially the same in the entire region where the back surface concave portion 22 is formed as shown by the thickness t2 in FIG. It is preferable. The dummy pattern 13 is preferably formed of any one of a semiconductor layer, an insulating layer, and a metal layer, but is particularly preferably formed of an oxide layer such as a silicon oxide film. The dummy pattern 13 is preferably larger in thickness t1 (see FIG. 10B) from the viewpoint of being more difficult to cleave, but more preferably has a thickness t1 of 0.1 μm or more and 20 μm or less.

(Embodiment 2)
Referring to FIG. 12, in the present embodiment, each of the pair of dummy patterns 13 indicated by D1 in FIG. 3 in the dummy formation region is a creeping surface as a pair of first side edges facing each other. It is formed so as to have a side 13a (first creeping side) and a slope side 13c (first slope side). The creeping side 13a means a surface (side) extending in a direction (almost parallel) along the cleavage line 15 in a plan view, and the slope side 13c is a direction in which the cleavage line 15 extends in a plan view. Means a surface (side) extending in an oblique direction.

  The slope side 13 c has an angle β with respect to the cleavage line 15. The angle β of the slope side 13c with respect to the cleavage line 15 is preferably greater than 0 ° and less than 90 °, more preferably greater than 0 ° and 45 ° or less.

  Each of the pair of creeping side edges 22 a and the pair of slope side edges 22 c is formed so as to be symmetric with respect to the cleavage line 15. Further, the slope side 13c is formed closer to the starting side of cleavage (the right side in the figure) than the creeping side 13a, and both are formed so as to be continuous with each other in the horizontal direction of the figure.

  Also in the present embodiment, the pair of dummy patterns 13 opposed so as to sandwich the cleavage line 15 are formed such that the distance between the first side edges is wider on the starting point side than on the ending point side. For this reason, the space | interval of a pair of slope side 13c is formed so that it may become narrow gradually toward the end point side from the starting point side. The pair of creeping side edges 13a extends in the left-right direction in the drawing so as to maintain the distance at the end point on the end point side of the pair of slope side edges 13c.

  In the present embodiment, the back surface concave portion 22 includes a region between a pair of intersection side sides 13b on a starting point side, in particular, a region overlapping a region sandwiched between the pair of dummy patterns 13 in a plan view. It is formed only in the region on the relatively starting point side. However, the back surface concave portion 22 (as in the first embodiment) may be formed in the entire region overlapping the region sandwiched between the pair of dummy patterns 13 in plan view. The back surface recess 22 has a rectangular planar shape.

  In addition, since the structure of this Embodiment other than this is as substantially the same as the structure of Embodiment 1, the same code | symbol is attached | subjected about the same element and the description is not repeated.

Next, the effect of this Embodiment is demonstrated.
Also in the present embodiment, as in the first embodiment, even if the shifted cleavage line 18 travels at a position shifted from the original cleavage line 15 as shown in FIG. It is difficult to progress. Therefore, the position is corrected so that the cleavage proceeds along the slope side 13c when it reaches the slope side 13c, which is the first side of the starting side of the pair of dummy patterns 13. This correction is facilitated by the fact that the semiconductor wafer 11 just below the slope side 13c is thinner by the back surface recess 22.

  For this reason, in the region sandwiched between the pair of creeping side sides 13a on the end point side from the slope side 13c, the region between the pair of creeping sides 13a that is narrower than the slope side 13c It is possible to proceed along the cleavage line 15. For this reason, the shifted cleavage line 18 travels parallel to the cleavage line 15 without deviating in the other direction at a position close to the original cleavage line 15, and is allowed when the semiconductor light emitting element 12 is divided into individual chips. It can be suppressed within the range of dimensional error.

  In the present embodiment, the back surface concave portion 22 is formed so as to overlap only the region on the starting point side of the dummy pattern 13 and does not overlap the region on the end point side of the dummy pattern 13. However, if the cleavage can proceed along the slope side 13c by the back side recess 22 directly below the slope side 13c of the dummy pattern 13 at least in the starting side region, the back side recess 22 is formed thereafter (end point side). Even if not, the cleavage can proceed along the slope side 13c of the dummy pattern 13 that is difficult to cleave.

(Embodiment 3)
Referring to FIG. 13, in the present embodiment, in each of the pair of dummy patterns 13 indicated by D <b> 1 in FIG. 3 in the dummy formation region, the creeping side as a pair of first side edges facing each other. A plurality of the sides 13a (first creeping side) and the crossing side 13b (first crossing side) are alternately arranged so as to form a step shape in plan view (in the horizontal direction in the figure). Formed. Here, the intersecting surface side 13b means a surface (side) extending in a direction intersecting (substantially perpendicular) to the cleavage line 15 in plan view. Therefore, the creeping side 13a and the intersecting side 13b are formed so as to be substantially orthogonal in a plan view.

  By forming in a staircase pattern, each dummy pattern 13 is formed to have a plurality of creeping side edges 13a and intersecting face side edges 13b. One and the other of the pair of dummy patterns 13 are formed so as to be symmetrical with respect to the cleavage line 15. For this reason, the lengths of all the creeping side edges 13a of one dummy pattern 13 and all the creeping side edges 13a of the other dummy pattern 13 are substantially equal, and all the intersecting face side edges 13b of one dummy pattern 13 are The lengths of all of the other dummy patterns 13 and the side surfaces 13b of the intersecting surfaces are substantially equal.

  The length of each creeping side 13a is preferably equal to or longer than the length of each intersecting side 13b. In this way, when the entire first side 13a, 13b having the staircase shape is approximated as a straight line macroscopically, the angle formed by the straight line with the cleavage line 15 is the angle α in the first and second embodiments. , Β can be greater than 0 ° and less than 45 °. For this reason, the effect which correct | amends the advancing direction of the misalignment cleavage line 18 similarly to Embodiment 1, 2 is heightened.

  Also in the present embodiment, the pair of dummy patterns 13 opposed so as to sandwich the cleavage line 15 are formed such that the distance between the first side edges is wider on the starting point side than on the ending point side.

  Further, in the present embodiment, as in the second embodiment, the back surface concave portion 22 is, in particular, at a pair of starting side end portions in a region overlapping the region sandwiched between the pair of dummy patterns 13 in plan view. It is formed in a region on the relatively starting point side including the region between the crossing surface side 13b. However, the back surface concave portion 22 (as in the first embodiment) may be formed in the entire region overlapping the region sandwiched between the pair of dummy patterns 13 in plan view.

  In addition, since the structure of this Embodiment other than this is as substantially the same as the structure of Embodiment 1, the same code | symbol is attached | subjected about the same element and the description is not repeated.

Next, the effect of this Embodiment is demonstrated.
Even in the case where the dummy pattern 13 has the stepped side edges 13a and 13b as in the present embodiment, the shift cleavage line 18 is a pair of dummy patterns, particularly by adjusting the respective lengths as described above. The position and direction of the travel can be corrected so as to travel in the region sandwiched by 13. This effect is enhanced by the presence of the back surface recess 22 as in the first and second embodiments.

(Embodiment 4)
Referring to FIG. 14, in the present embodiment, the width of back surface recess 22 in the direction (vertical direction in FIG. 14) intersecting the direction in which cleavage line 15 extends in plan view is close to the starting point. On the intersection surface side edge 22b (second origin side edge portion) that is the right end portion, the intersection surface side edge 22b (second endpoint side edge portion) that is on the opposite side, that is, the end portion near the end point of cleavage. ) To be wider.

  More specifically, the back surface recess 22 of the present embodiment is a pair of creeping sides 22a (second creeping sides) as a pair of second sides facing each other with the cleavage line 15 in between. And a pair of slope side edges 22c (second slope side edges). The creeping side 22a means a surface (side) extending in a direction (almost parallel) along the cleavage line 15 in a plan view, and the inclined side 22c is a direction in which the cleavage line 15 extends in a plan view. Means a surface (side) extending in an oblique direction.

  Each of the pair of creeping side edges 22 a and the pair of slope side edges 22 c is formed so as to be symmetric with respect to the cleavage line 15. Further, the slope side 22c is formed closer to the starting side of cleavage (the right side in the figure) than the creeping side 22a, and both are formed to be continuous with each other in the horizontal direction of the figure. The pair of slope side sides 13c are formed so as to be inclined so that their intervals (in the vertical direction in the figure) gradually decrease as they proceed from the starting point side to the ending point side.

  In FIG. 14, the creeping side 13a is short and the slope side 13c is long in the direction along the cleavage line 15 as compared with the second embodiment (FIG. 12). It is not restricted to such a form, You may form so that it may become the same planar shape as FIG.

  In FIG. 14, each of the pair of dummy patterns 13 in the region indicated by D1 in FIG. 3 is formed to have a pair of creeping side 13a and slope side 13c, as in the second embodiment. Is done. In addition, the first side sides 13 a and 13 c of the pair of dummy patterns 13 and the pair of second side sides 22 a and 22 c of the back surface recess 22 are illustrated to overlap each other. However, the present invention is not limited to this mode, and in the present embodiment, the back surface concave portion 22 is formed so as to overlap with both of the pair of dummy patterns 13 so as to straddle both of the pair of dummy patterns 13. The side edges 22a and 22c may be formed so as to overlap each other in the pair of dummy patterns 13. The pair of dummy patterns 13 is not limited to the dummy pattern 13 according to the second embodiment, and may have the same aspects as the dummy patterns 13 according to the first and third embodiments. In any case, it is preferable that the semiconductor wafer 11 immediately below the first side sides 13 a and 13 c of the pair of dummy patterns 13 is thinned by the back surface recess 22.

  In this respect, the present embodiment is different from the first to third embodiments in which the back surface recess 22 has a rectangular planar shape and the width in the vertical direction of the figure is constant. Since the configuration of the present embodiment other than this is substantially the same as the configuration of the first embodiment, the same elements are denoted by the same reference numerals, and the description thereof will not be repeated.

Next, the effect of this Embodiment is demonstrated.
Also in the present embodiment, the traveling direction of the shift cleavage line 18 is corrected by the inclined side 13c of the dummy pattern 13. This effect is enhanced by the back surface recess 22 in which the semiconductor wafer 11 just below the slope side 13c is thinned. Further, since the semiconductor wafer 11 directly below the creeping side edge 13a is also thinned by the back surface concave portion 22, the shift cleavage line 18 can travel in a direction along the creeping side edge 13a. For this reason, the shift cleavage line 18 can proceed on the extension line of the creeping side 13 a in parallel with the cleavage line 15 on the end point side (end point side relative to the first end point side end) from the creeping side edge 13 a. For this reason, the deviation | shift amount with respect to the cleavage line 15 of the displacement cleavage line 18 can be stored in the tolerance | permissible range (within the distance of the up-down direction of the figure of the cleavage line 15 and the creeping side 13a).

  In addition, since the width of the back surface recess 22 is formed to be wider at the second start side end than the second end side end, the width gradually decreases toward the end point. The traveling direction of the line 18 can be accommodated in the region of the back surface recess 22 whose width is narrowed.

(Embodiment 5)
Referring to FIG. 15, each of the pair of second side edges facing each other so as to sandwich the cleavage line 15 is a creeping side 22 a (second creeping side). And the intersecting surface side 22b (second intersecting surface side) are formed so as to alternately continue in a plan view (in the horizontal direction in the figure). The creeping side 22a means a surface (side) extending in a direction (almost parallel) along the cleavage line 15 in a plan view, and the intersecting side 22b extends the cleavage line 15 in a plan view. It means a surface (side) extending in a direction intersecting (orthogonal) with the direction.

  In FIG. 15, each of the pair of dummy patterns 13 in the region indicated by D <b> 1 in FIG. 3 is a creeping side 13 a (first creeping side) as the first side, as in the third embodiment. And the intersecting surface side 13b (first intersecting surface side) are formed to form a step shape in plan view. The first side sides 13a and 13b constituting the respective stepped shapes of the pair of dummy patterns 13 and the pair of second side sides 22a and 22b constituting the stepped shape of the back surface recess 22 are overlapped with each other. Is shown in FIG. However, the present invention is not limited to this mode, and in the present embodiment, the back surface concave portion 22 is formed so as to overlap with both of the pair of dummy patterns 13 so as to straddle both of the pair of dummy patterns 13. The side edges 22a and 22c may be formed so as to overlap each other in the pair of dummy patterns 13. The pair of dummy patterns 13 is not limited to the dummy pattern 13 according to the third embodiment, and may have the same aspects as the dummy patterns 13 according to the first and second embodiments. In any case, it is preferable that the semiconductor wafer 11 immediately below the first side sides 13 a and 13 b of the pair of dummy patterns 13 is thinned by the back surface recess 22.

  In addition, since the structure of this Embodiment other than this is as substantially the same as the structure of Embodiment 4, the same code | symbol is attached | subjected about the same element and the description is not repeated.

Next, the effect of this Embodiment is demonstrated.
Also in the present embodiment, the traveling direction of the shift cleavage line 18 is corrected by the creeping side 13a and the crossing side 13b, which are the first sides of the dummy pattern 13, and proceeds along the first side. . This effect is enhanced by the back surface recess 22 in which the semiconductor wafer 11 just below the slope side 13c is thinned. For this reason, the shifted cleavage line 18 is parallel to the cleavage line 15 on the end point side of the creeping side edge 13a (end point side of the first end point side edge), and proceeds on the extended line of the creeping side edge 13a closest to the endpoint. be able to. For this reason, the deviation | shift amount with respect to the cleavage line 15 of the displacement cleavage line 18 can be stored in the tolerance | permissible range (within the distance of the up-down direction of the figure of the cleavage line 15 and the creeping side 13a).

  Further, the width of the back surface concave portion 22 having a stepped planar shape is formed so as to be wider than the second end point side end portion at the second start point side end portion, so that the width gradually increases toward the end point side. Since it becomes narrow, the advancing direction of the shift cleavage line 18 can be accommodated in the area | region of the back surface recessed part 22 whose width | variety became narrow.

(Embodiment 6)
Referring to FIG. 16, in the present embodiment, as in the fourth embodiment, a pair of creeping side edges is used as a pair of second side faces facing each other so that back surface recess 22 sandwiches cleavage line 15. 22a (second creeping side) and a pair of slope side 22c (second slope side) are formed. However, in the present embodiment, the slope side 22c is formed on the cleaving end point side (left side in the drawing) with respect to the creeping side 22a, and the slope side 22c is cleaved with respect to the creeping side 22a. This is different from the fourth embodiment formed on the right side of the figure. Also in the present embodiment, the creeping side 22a and the slope side 22c are formed so as to be continuous with each other in the horizontal direction of the drawing.

  Further, in the present embodiment, the slope side 13c is also formed on the end point side (left side in the drawing) of the cleaved side 13a with respect to the creeping side 13a in the pair of dummy patterns 13 as in the case of the back surface recess 22. 13a and the slope side 13c are formed so as to be continuous with each other in the horizontal direction of the drawing. The pair of slope side sides 13c are formed so as to be inclined so that their intervals (in the vertical direction in the figure) gradually decrease as they proceed from the starting point side to the ending point side. For this reason, the pair of slope side sides 13c are formed to have a shape inclined in the direction in which the distance between them becomes smaller at the first end point side end portion (intersection of the pair of slope side sides 13c).

  With respect to the back surface recess 22, each of the pair of creeping side edges 22 a and the pair of slope side edges 22 c is formed to be symmetric with respect to the cleavage line 15. For this reason, it is preferable that the intersection of the pair of slope side sides 22c corresponding to the second end side end is formed on the cleavage line 15.

  Also in FIG. 16, as in FIGS. 14 and 15, the first sides 13 a and 13 c of the pair of dummy patterns 13 in the region indicated by D <b> 1 in FIG. 3 are the second sides 22 a and 22 c of the back surface recess 22. Are shown to overlap each other. However, the present invention is not limited to this mode, and in the present embodiment, the back surface recess 22 is formed so as to overlap with both of the pair of dummy patterns 13 so as to straddle both of the pair of dummy patterns 13. The side edges 22a and 22c may be formed so as to overlap each other in the pair of dummy patterns 13. The pair of dummy patterns 13 may have the same mode as the dummy patterns 13 of the first, second, and third embodiments. It is preferable that the semiconductor wafer 11 immediately below the first side edges 13 a and 13 c of the pair of dummy patterns 13 is thinned by the back surface recess 22.

  In addition, since the structure of this Embodiment other than this is as substantially the same as the structure of Embodiment 4, the same code | symbol is attached | subjected about the same element and the description is not repeated.

Next, the effect of this Embodiment is demonstrated.
Also in the present embodiment, the traveling direction of the shift cleavage line 18 is corrected by the creeping side 13 a of the dummy pattern 13. This effect is enhanced by the back surface recess 22 in which the semiconductor wafer 11 just below the creeping side 13a is thinned. Further, since the semiconductor wafer 11 directly below the first side sides 13a and 13c is also thinned by the back surface concave portion 22, the shift cleavage line 18 can travel along the side surface side 13a.

  Furthermore, the shift cleavage line 18 can be advanced along the inclined side 22 c of the back surface recess 22. This is because the thickness of the semiconductor wafer 11 is larger on the outside of the back surface recess 22 (slope side 22c) than on the inside, so that the resistance is large and the cleavage is difficult to proceed. In this case, if the misaligned cleavage line 18 reaches the second end side end of the slope side 22c, it is highly possible that the cleavage can proceed on the cleavage line 15 in a region closer to the end point. Become. This is formed so that the second end side end and the cleavage line 15 substantially intersect with each other, so that the shifted cleave line 18 that has advanced along the slope side 22c and reached the second end side end is the cleavage line. This is because it is relatively easy to change the traveling direction so as to travel on the 15th.

(Embodiment 7)
Referring to FIG. 17, in the present embodiment, each of the pair of dummy patterns 13 and the back surface recess 22 in the region indicated by D1 in FIG. Each is formed to have the same planar shape and arrangement. However, referring to FIG. 18, in the present embodiment, back surface recess bottom surface 22 d that generally faces main surfaces 11 </ b> A and 11 </ b> B of semiconductor wafer 11 that is a part of back surface recess 22 is inclined with respect to main surface 11 </ b> A. It is formed to have an angle γ.

  The thickness t2 (see FIG. 18) of the semiconductor wafer 11 in the thinned region where the back surface concave portion 22 is formed intersects with the vertical direction in FIG. 17 (left and right direction in FIG. 18), that is, the direction in which the cleavage line 15 extends in plan view. It is preferable that the distance is minimized at the center portion CT (see FIG. 18) of the back surface concave portion 22 with respect to the direction in which it is performed. That is, it is preferable that the distance in the vertical direction in FIG. 18 between the bottom surface 22 d of the back surface concave portion and the one main surface 11A of the semiconductor wafer 11 in the center portion CT is minimized. Then, as the distance from the central portion CT in the vertical direction in FIG. 17 (the horizontal direction in FIG. 18) increases, the distance (thickness t2) in the vertical direction in FIG. 18 between the back surface bottom surface 22d and the main surface 11A gradually increases. 22d is formed to have an angle γ inclined with respect to the main surfaces 11A and 11B.

  Here, a method of forming the back concave bottom surface 22d having an angle γ inclined with respect to the main surfaces 11A and 11B will be described. For example, after forming a normal (constant depth) back surface concave portion 22 on main surface 11B of semiconductor wafer 11 by the same processing as in FIGS. 5 and 6, for example, hydrochloric acid and phosphoric acid are mixed at a ratio of approximately 1: 5. Normal wet etching is performed with the mixed chemical. As a result, only the bottom surface of back surface recess 22, particularly the bottom surface facing main surface 11A, is selectively etched, and back surface recess bottom surface 22d is formed as an inclined surface having an inclination angle γ of, for example, about 35 ° with respect to main surface 11A.

  18 d of back surface recessed part bottom surfaces have the shape inclined so that thickness t2 which is distance with main surface 11A may become small toward the center part CT of FIG. 18, and it has two planes which use the center part CT as a boundary It is preferable to be formed. The pair of creeping side edges 22a of the back surface recess 22 and the two planes are formed so as to be symmetrical with respect to the center portion CT.

  However, the above-mentioned inclination angle γ is merely an example, and when the back surface concave bottom surface 22d is formed by the above-described wet etching, the angle γ is preferably 60 ° or less. For example, when the crystal orientation is parallel to the (111) plane, the angle γ is 57 °, and when the crystal orientation is parallel to the (211) plane, the angle γ is 35 ° and the crystal orientation is parallel to the (311) plane. In this case, the angle γ is preferably 25 °.

  In the present embodiment, the back surface recess bottom surface 22d is opposed so as to extend along the direction in which the main surfaces 11A and 11B of the semiconductor wafer 11 expand (for example, the thickness t2 of the back surface recess 22 in FIG. This is different from the first to sixth embodiments).

  In addition, since the structure of this Embodiment other than this is as substantially the same as the structure of Embodiment 2, the same code | symbol is attached | subjected about the same element and the description is not repeated.

Next, the effect of this Embodiment is demonstrated.
Also in the present embodiment, basically, as in each of the above embodiments, the dummy pattern 13 and the back surface recess 22 have an effect of correcting the direction in which the shift cleavage line 18 travels. In addition to this, in the present embodiment, the processing is performed so that the semiconductor wafer 11 becomes thinner than the other regions of the back surface recess bottom surface 22d, particularly in the central portion CT of the back surface recess bottom surface 22d. That is, the cleaving is more likely to occur in the central portion CT where the semiconductor wafer 11 is particularly thinnest. For this reason, the shift cleavage line 18 that travels in the back surface recess 22 that overlaps the region sandwiched between the pair of dummy patterns 13 travels on the central portion CT with a higher probability after traveling along the slope side 13c. Can be made.

  Here, the central portion CT of the bottom surface 22d of the back surface concave portion is substantially equal to the position of the cleavage line 15 that should be originally traveled. Therefore, the shifted cleavage line 18 that has traveled along the slope side 13c eventually reaches the central portion CT. After that, the possibility of traveling on the cleavage line 15 increases. In other words, on the end point side of the back surface concave portion 22, there is a high possibility that the cleavage can be performed so as to proceed on the cleavage line 15 that should be originally traveled. For this reason, in this embodiment, it can be expected to further improve the reliability of the dimensions of the semiconductor chip formed by cleavage.

(Embodiment 8)
Referring to FIG. 19, in the present embodiment, a surface recess 23 as a recess is formed instead of dummy pattern 13 on a part of one main surface 11 </ b> A in the dummy formation region. The front surface recess 23 is formed in the same manner as the back surface recess 22, for example, by the semiconductor wafer 11 being partially removed from the main surface 11A toward the main surface 11B side and thinned by, for example, a normal photoengraving technique using a photoresist and etching. Is done. A plurality of surface recesses 23 are formed, for example, along either the row direction or the column direction in which the semiconductor light emitting elements 12 are arranged.

  Also in the present embodiment, the semiconductor light emitting element 12 is formed in the element formation region as in the other embodiments described above. A region between the pair of semiconductor light emitting elements 12 adjacent to each other in the vertical direction of FIG. 1 among the plurality of semiconductor light emitting elements 12 does not intersect with any of the plurality of semiconductor light emitting elements 12 arranged in the horizontal direction of FIG. Thus, one cleave line 15 extends. The surface recess 23 is formed so that the region between the pair of semiconductor light emitting elements 12 overlaps at least a part of the cleavage line 15 (particularly the cleavage line 15 in a part of the dummy formation region) extending in the left-right direction in the drawing.

  Referring to FIG. 20, in the region indicated by D <b> 2 in FIG. 19 in the dummy formation region, front surface recess 23 has the same planar shape as back surface recess 22 in FIG. 16 (Embodiment 6), for example. That is, first, the surface recess 23 has a width with respect to a direction (vertical direction in FIG. 20) intersecting with the direction in which the cleavage line 15 extends in a plan view. The third end point side end portion (the intersection point of the pair of slope side sides 23c) that is the end portion on the opposite side, that is, the side close to the end point of cleavage is wider at (third start point side end portion). It is formed.

  Similarly to the back surface concave portion 22 in FIG. 16 (Embodiment 6), the front surface concave portion 23 is a pair of creeping side sides 23a (first side) as a pair of third side surfaces facing each other with the cleavage line 15 interposed therebetween. 3 creeping side edges) and a pair of slope side edges 23c (third slope side edges). The slope side edge 23c is formed on the end point side (left side in the drawing) of the cleavage with respect to the creeping side edge 23a, and the creeping side edge 23a and the slope side edge 23c are formed so as to be continuous with each other in the horizontal direction of the drawing.

  Here, the angle formed by the pair of inclined side surfaces 23c and the cleavage line 15 is preferably greater than 0 ° and less than 90 °, more preferably greater than 0 ° and 45 ° or less.

  Referring to FIG. 21, scratch 17 is formed in the semiconductor wafer 11 (including the region indicated by D <b> 2 in FIG. 19) in which the surface recess 23 is formed, in the same manner as in the process illustrated in FIG. 9. The wafer 11 is cleaved along the cleavage line 15 shown in FIG.

  Regarding the surface recess 23, each of the pair of creeping side edges 23 a and the pair of slope side edges 23 c is formed so as to be symmetric with respect to the cleavage line 15. For this reason, it is preferable that the intersection of the pair of slope side sides 23c corresponding to the third end side end is formed on the cleavage line 15.

  In addition, since the structure of this Embodiment other than this is as substantially the same as the structure of Embodiment 1, the same code | symbol is attached | subjected about the same element and the description is not repeated.

Next, the effect of this Embodiment is demonstrated, referring FIGS. 21-22.
Referring to FIG. 22 (A), this shows a mode of a cross section in a region on the left side of the scratch 17 in FIG. Referring to FIG. 22B, this shows a cross-sectional aspect in the region where the surface recess 23 (slope side 23c) of FIG. 21 is formed. Referring to FIG. 22C, this shows a cross-sectional aspect in a region on the left side of the surface recess 23 in FIG.

  As shown in FIG. 22 (A), the shifted cleaved line 18 that advances from the right side to the left side in FIG. 21 along the direction in which the cleaved line 15 extends is shifted from the cleaved line 15 (to the right side in the figure). Even after reaching 23, the vehicle travels straight without changing the traveling direction.

  However, when the shift cleavage line 18 reaches the slope side 23c of the surface recess 23, the traveling direction is corrected along the slope side 23c. This is because the thickness of the semiconductor wafer 11 is larger on the outer side of the slope side 23c (surface recess 23) than on the inner side, so that the displacement cleavage line 18 has a large resistance to go straight on the slope side 23c.

  The shift cleavage line 18 traveling along the pair of slope side edges 23c is compared with the cleavage line 15 intersecting with the intersection at the intersection of the pair of slope side edges 23c corresponding to the third end point side end. Can be easily mounted. For this reason, the shift cleavage line 18 can travel on the cleavage line 15 with a high probability on the end point side of the surface recess 23 as shown in FIG. (Almost completely) can be eliminated.

  In the present embodiment, only the front surface recess 23 is formed, and the back surface recess 22 is not formed. Even in this case, in order to allow the semiconductor wafer 11 to be cleaved without deviation from one main surface 11A to the other main surface 11B (that is, including the main surface 11B side which is the back surface side), it is necessary to perform misalignment cleavage. It is preferable to make the thickness of the semiconductor wafer 11 as small as possible in the region where the inclined side 23c for correcting the traveling direction of the line 18 is formed. In order to do this, the depth in the thickness direction of the semiconductor wafer 11, particularly the slope side edge 23 c of the surface recess 23, is 10 μm or more, and the slope of the slope side edge 23 c with respect to the extending direction of the main surfaces 11 A and 11 B The angle is preferably greater than 0 ° and less than 45 °. Furthermore, it is preferable that the width | variety of the up-down direction of FIG. 20 of the crossing surface side edge 23b which is a 3rd origin side edge part is 50 micrometers or less.

  Further, for example, in the first to seventh embodiments, if the slope side 13c of the dummy pattern 13 and the side of the back recess 22 coincide with each other so as to overlap each other, the slope side 13c is displaced and the traveling direction of the cleavage line 18 is changed. The correction effect is further enhanced. In the present embodiment, such a configuration in which the dummy pattern 13 and the back surface concave portion 22 overlap each other is not formed, and only the front surface concave portion 23 is formed. In other words, in this embodiment, the slope side 23c, which is one region, has the same function as when only one region is formed by overlapping the dummy pattern 13 and the side of the back recess 22 with each other. Further, the effect of correcting the traveling direction of the shift cleavage line 18 is further enhanced.

(Embodiment 9)
Referring to FIG. 23, in the present embodiment, front surface recess 23 formed in the region indicated by D2 in FIG. 19 in the dummy formation region is, for example, back surface recess 22 in FIG. 14 (Embodiment 4). It has the same planar shape. That is, the surface concave portion 23 is a pair of third side sides facing each other so as to sandwich the cleavage line 15, and a pair of creeping side sides 23a (third creeping side side) and a pair of slope side sides 23c (first side). 3 slope sides). The slope side edge 23c is formed closer to the starting side of cleavage (the right side in the drawing) than the creeping side edge 23a, and the creeping side edge 23a and the slope side edge 23c are formed to be continuous with each other in the horizontal direction of the drawing. Further, the third starting point side end portion and the third end point side end portion of the surface recess 23 are formed as a pair of intersecting surface side edges 23b.

  In addition, since the structure of this Embodiment other than this is as substantially the same as the structure of Embodiment 8, the same code | symbol is attached | subjected about the same element and the description is not repeated.

Next, the effect of this Embodiment is demonstrated.
Also in the present embodiment, as in the eighth embodiment, a shifted cleavage line that travels substantially parallel to the cleavage line 15 and reaches the creeping side 23a or the slope side 23c, which is the third side of the surface recess 23. 18, the traveling direction is corrected so as to follow the creeping side 23a or the slope side 23c. Since the width in the vertical direction in FIG. 23 at the third end point side end portion is narrower than the width at the third start side end portion, it proceeds along the third side of the surface recess 23. The traveling direction of the shift cleavage line 18 is corrected so as to travel near the cleavage line 15.

  For this reason, the shifted cleavage line 18 is also parallel to the cleavage line 15 on the end point side from the creeping side edge 23a (the end point side from the intersecting surface side edge 23b, which is the third end point side end), and the creeping line closest to the end point side. It is possible to proceed on the extension line of the side 23a. For this reason, the deviation | shift amount with respect to the cleavage line 15 of the deviation cleavage line 18 can be stored in a tolerance | permissible range (within the distance of the up-down direction of the figure between the cleavage line 15 and the creeping side 23a).

(Embodiment 10)
Referring to FIG. 24, in the present embodiment, front surface recess 23 formed in the region indicated by D2 in FIG. 19 in the dummy formation region is, for example, back surface recess 22 in FIG. 15 (Embodiment 5). It has the same planar shape. That is, each of the pair of third side edges facing each other so as to sandwich the cleavage line 15 is a surface side edge 23a (third surface side edge) and a cross surface side edge 23b (third intersection). Are formed in such a manner that a plurality of (side surfaces) are alternately arranged so as to form a step shape in a plan view (in the horizontal direction in the figure). Further, the third starting point side end portion and the third end point side end portion of the surface recess 23 are formed as a pair of intersecting surface side edges 23b.

  In addition, since the structure of this Embodiment other than this is as substantially the same as the structure of Embodiment 8, the same code | symbol is attached | subjected about the same element and the description is not repeated.

Next, the effect of this Embodiment is demonstrated.
Also in the present embodiment, the traveling direction of the shift cleavage line 18 is corrected by the creeping side 23a and the crossing side 23b, which are the third sides of the surface recess, and proceeds along the third side. Therefore, as in the other embodiments described above, the amount of displacement of the displacement cleavage line 18 relative to the cleavage line 15 is within an allowable range (within the vertical distance between the cleavage line 15 and the creeping side 23a). be able to.

(Embodiment 11)
Referring to FIG. 25, in the present embodiment, surface recesses 23 in the dummy formation region indicated by D2 in FIG. 19 have the same planar shape and arrangement as in FIG. 20 of the eighth embodiment. Formed to have. However, referring to FIG. 26, in the present embodiment, surface recess bottom surface 23d that generally faces main surfaces 11A and 11B of semiconductor wafer 11 that is part of surface recess 23 is inclined with respect to main surface 11B. It is formed to have an angle γ.

  The mode of the surface recess 23 having the surface recess bottom surface 23d is basically the same as the mode of the back surface recess 22 having the inclined back surface recess bottom surface 22d of the seventh embodiment. That is, the thickness t2 (see FIG. 26) of the semiconductor wafer 11 in the thinned region where the surface recess 23 is formed is in the vertical direction in FIG. 25 (left-right direction in FIG. 26), that is, in the direction in which the cleavage line 15 extends in plan view. It is preferable to be minimized at the center portion CT (see FIG. 18) of the surface recess 23 in the intersecting direction. Then, as the distance from the central portion CT in the vertical direction in FIG. 25 (the horizontal direction in FIG. 26) increases, the distance (thickness t2) in the vertical direction in FIG. 26 between the surface concave bottom surface 23d and the main surface 11B gradually increases. 23d is formed to have an angle γ inclined with respect to the main surfaces 11A and 11B.

The preferable condition for the angle γ is basically the same as the angle γ of the seventh embodiment.
26 d of surface recessed parts have the shape inclined so that thickness t2 which is the distance with the main surface 11B may become small toward the center part CT of FIG. 26, and it has two planes which use the center part CT as a boundary It is preferable to be formed. The pair of creeping side edges 23a of the surface recess 23 and the two planes are formed so as to be symmetric with respect to the central portion CT.

  The surface recess 23 having the surface recess bottom surface 23d of the present embodiment is formed by the same technique as the back surface recess 22 of the seventh embodiment.

  In addition, since the structure of this Embodiment other than this is as substantially the same as the structure of Embodiment 8, the same code | symbol is attached | subjected about the same element and the description is not repeated.

Next, the effect of this Embodiment is demonstrated.
In the present embodiment, the central portion CT in which the semiconductor wafer 11 is particularly (most) thinned among the surface recesses 23 and more easily cleaved is formed. For this reason, as in the seventh embodiment, the shift cleavage line 18 traveling in the surface recess 23 can travel on the central portion CT with a higher probability.

  Here, since the central portion CT of the bottom surface 23d of the surface recess is substantially equal to the position of the cleavage line 15 that should originally proceed, the shifted cleavage line 18 that has traveled along the slope side 23c eventually reaches the central portion CT. After that, the possibility of traveling on the cleavage line 15 increases. This is because it can be placed relatively easily on the cleavage line 15 that intersects the intersection at the intersection of the pair of slope side sides 23c corresponding to the third end side end.

  In the present embodiment, there is a high possibility that cleavage can be performed so as to proceed on the cleavage line 15 that should originally proceed, particularly in the region closer to the end point than the surface recess 23. For this reason, in this embodiment, it can be expected to further improve the reliability of the dimensions of the semiconductor chip formed by cleavage.

(Embodiment 12)
Referring to FIG. 27, in the present embodiment, dummy pattern 13 having the aspect of the second embodiment (FIG. 12) formed on the area indicated by D1 in FIG. 19 and the surface recess 23 having the aspect of the eighth embodiment (FIG. 20) formed in the region indicated by D2 in FIG. 19 is combined.

  In other words, in the present embodiment, the main surface 11A of the dummy formation region where the surface recess 23 is formed is cleaved in the same manner as in the second embodiment (FIG. 12) as in the eighth embodiment (FIG. 20). A pair of dummy patterns 13 is formed so as to sandwich the line 15, and a back surface recess 22 similar to that of the second embodiment (FIG. 12) is formed.

  Here, as in the second embodiment, the back surface recess 22 is formed so as to straddle both the pair of dummy patterns 13 adjacent to each other in the vertical direction of FIG. It is preferable that they are formed so as to partially overlap with each other.

  On the other hand, the surface recesses 23 are illustrated in FIG. 27 such that each of the pair of slope side sides 23 c overlaps each of the slope side sides 13 c of the pair of dummy patterns 13. However, the present invention is not limited thereto, and the surface recesses 23 are formed so as to overlap with both of the pair of dummy patterns 13 so as to straddle both of the pair of dummy patterns 13, and the third side edges 23a, 23c are It may be formed so as to overlap with the region in the pair of dummy patterns 13.

  As described above, in this embodiment, the semiconductor light emitting element 12 (see FIGS. 3 and 19), the front surface concave portion 23, the back surface concave portion 22, and the dummy pattern 13 are formed, but the order in which these are formed is not limited. . Further, for example, the semiconductor light emitting element 12 and the dummy pattern 13 may be formed at the same time, so that the number of processes can be reduced.

  Referring to FIG. 28 (A), this shows a cross-sectional aspect in a region on the right side of the region where the front surface concave portion 23 of FIG. 27 is formed and the rear surface concave portion 22 is formed. Referring to FIG. 28 (B), this shows an aspect of a cross section in a region where the front surface concave portion 23 and the rear surface concave portion 22 in FIG. 27 overlap and the dummy pattern 13 and the rear surface concave portion 22 overlap. Referring to FIG. 28C, this shows an aspect of a cross section in the region where the dummy pattern 13 is formed on the end point side with respect to the front surface concave portion 23 and the rear surface concave portion 22 in FIG.

  For example, in the region where the front surface recess 23 and the back surface recess 22 overlap each other as shown in FIG. 28 (B), by controlling the depth in the thickness direction of the semiconductor wafer 11 of each of the surface recess 23 and the back surface recess 22, Even in these overlapping regions, the thickness of the semiconductor wafer 11 can be ensured. In addition, it is preferable that the thickness of the semiconductor wafer 11 in the area | region in which at least any one of the surface recessed part 23 and the back surface recessed part 22 is formed is 50 micrometers or less.

  In addition, since the structure of this Embodiment other than this is as substantially the same as the structure of Embodiment 2, 8, the same code | symbol is attached | subjected about the same element and the description is not repeated.

Next, the effect of this Embodiment is demonstrated.
For example, in the second embodiment, for example, as shown in FIG. 28 (B), the shift cleavage line 18 is cleaved along the dummy pattern 13 so that the shift amount of the shift cleavage line 18 falls within an allowable range. Can be made smaller. However, there remains an amount of deviation of the creeping side 13a of the dummy pattern 13 and the cleavage line 15 by the distance in the vertical direction of FIG.

  However, in the present embodiment, in addition to the configuration of the second embodiment, the surface recess 23 (symmetric with respect to the cleavage line 15) of the eighth embodiment is formed. For this reason, as shown in FIG. 28 (B), the shift cleavage line 18 that travels along the pair of slope side edges 23c is at the intersection of the pair of slope side edges 23c corresponding to the third end point side end. Thus, it can be placed relatively easily on the cleavage line 15 that intersects the intersection. For this reason, the shift cleavage line 18 can be advanced on the cleavage line 15 with a high probability on the end point side of the surface recess 23 as shown in FIG. (Almost completely) can be eliminated.

  In other words, in this embodiment, the back surface recess 22 is formed in addition to the dummy pattern 13 and the surface recess 23. Therefore, for example, the thickness of the semiconductor wafer 11 in a partial region on the cleavage line 15 can be further reduced as compared with the case where only the surface recess 23 is formed (see FIG. 28B). For this reason, it can correct | amend so that the advancing direction of the cleavage cleavage line 18 may get on the cleavage line 15 more reliably compared with Embodiment 2,8.

  In the present embodiment, the example in which the front surface recess 23 of the eighth embodiment is combined with the dummy pattern 13 and the back surface recess 22 of the second embodiment has been described. However, the example of formation applicable in this embodiment However, the present invention is not limited to this, and the configurations of the other embodiments may be arbitrarily combined. For example, the front surface recess 23 of the tenth embodiment may be combined with the dummy pattern 13 and the back surface recess 22 of the third embodiment.

  The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

  DESCRIPTION OF SYMBOLS 11 Semiconductor wafer, 11A One main surface, 11B The other main surface, 12 Semiconductor light emitting element, 13 Dummy pattern, 13a, 22a, 23a Creeping side, 13b, 22b, 23b Crossing surface side, 13c, 22c, 23c Slope Side, 15 cleavage line, 17 scratch, 18 shift cleavage line, 19 blade, 22 back recess, 22d back recess bottom, 23 surface recess, 23d surface recess bottom, CT center, HM hard mask, PR photoresist.

Claims (18)

Providing a semiconductor wafer having a first main surface and a second main surface opposite to the first main surface;
The semiconductor wafer includes an element formation region in which a plurality of semiconductor element patterns are formed, and a dummy formation region separated from the element formation region in plan view, and further, the first or second in the dummy formation region Forming a recess on at least one of the main surfaces so as to overlap the cleavage line having the cleavage property of the semiconductor wafer;
Forming a scratch on the first main surface;
Cleaving the semiconductor wafer along the cleavage line starting from the scratch,
The method for manufacturing a semiconductor device, wherein the scratch is formed along a part of the cleavage line where the recess is formed, along the cleavage line. The recess includes a back recess formed in the second main surface,
Forming a pair of dummy patterns so as to sandwich the cleavage line in the dummy formation region of the first main surface;
In the step of forming the dummy pattern, a first side edge that exists in each of the one dummy pattern and the other dummy pattern in the pair of dummy patterns and faces the cleavage line therebetween. The dummy pattern is formed such that the distance between the first starting side end near the starting point is wider than the first end side end opposite to the first starting side end. The method of manufacturing a semiconductor device according to claim 1.   The method of manufacturing a semiconductor device according to claim 2, wherein the back surface recess is formed in at least a part of a region overlapping with the region sandwiched between the pair of dummy patterns in plan view.   4. The method of manufacturing a semiconductor device according to claim 2, wherein the back surface recess is formed so as to overlap both of the pair of dummy patterns in a plan view. 5.   In the step of forming the dummy pattern, the first side of the one dummy pattern and the first side of the other dummy pattern have a direction in which the cleavage line extends in a plan view. The dummy pattern is formed to include a first creeping side extending along the line and a first inclined side extending in an oblique direction with respect to a direction in which the cleavage line extends in a plan view. The manufacturing method of the semiconductor device of any one of Claims 2-4 formed.   In the step of forming the dummy pattern, the first side of the one dummy pattern and the first side of the other dummy pattern have a direction in which the cleavage line extends in a plan view. A first creeping side extending along the line and a first intersecting plane side extending in a direction intersecting with the direction in which the cleavage line extends in a plan view are formed stepwise. The manufacturing method of the semiconductor device of any one of Claims 2-4.   In the step of forming the concave portion, the width of the back surface concave portion with respect to the direction intersecting with the extending direction of the cleavage line in a plan view is the second starting side end near the starting point. 7. The method of manufacturing a semiconductor device according to claim 2, wherein the recess is formed to be wider than a second end side end on the opposite side to the start side end.   In the step of forming the recess, a pair of second side sides of the back surface recess facing each other across the cleavage line extend along a direction in which the cleavage line extends in a plan view. The back surface recess is formed so as to include a second creeping side and a second slope side extending in an oblique direction with respect to a direction in which the cleavage line extends in a plan view. 8. A method for producing a semiconductor device according to 7.   In the step of forming the recess, a pair of second side sides of the back surface recess facing each other across the cleavage line extend along a direction in which the cleavage line extends in a plan view. The back side so as to include a configuration in which the second creeping side and the second intersecting side extending in a direction intersecting with the direction in which the cleavage line extends in a plan view are formed stepwise. The method for manufacturing a semiconductor device according to claim 7, wherein the recess is formed. The back recess includes a bottom of a back recess facing the first or second main surface,
10. The method of manufacturing a semiconductor device according to claim 2, wherein the bottom surface of the back surface recess is formed to have an angle inclined with respect to the first main surface. 11.   The bottom surface of the back surface recess has a minimum distance from the first main surface at the center of the back surface recess in a direction intersecting the direction in which the cleavage line extends in plan view, and the first or second main surface. The method of manufacturing a semiconductor device according to claim 10, wherein the semiconductor device is formed so as to have an inclined angle with respect to the surface. The recess includes a surface recess formed in the first main surface,
The width of the surface recess in the direction intersecting with the direction in which the cleavage line extends in a plan view is such that the third start side end near the start point is the opposite of the third start side end. The method for manufacturing a semiconductor device according to claim 1, wherein the surface recess is formed so as to be wider than an end point side end portion of 3.   In the step of forming the concave portion, a pair of third side sides of the surface concave portion facing each other so as to sandwich the cleavage line extend along a direction in which the cleavage line extends in a plan view. The surface recess is formed so as to include a third creeping side and a third slope side extending in an oblique direction with respect to a direction in which the cleavage line extends in a plan view. 12. A method for manufacturing a semiconductor device according to 12.   In the step of forming the concave portion, a pair of third side sides of the surface concave portion facing each other so as to sandwich the cleavage line extend along a direction in which the cleavage line extends in a plan view. The surface so as to include a configuration in which a third creeping side and a third intersecting surface side extending in a direction intersecting with a direction in which the cleavage line extends in a plan view are formed stepwise. The method for manufacturing a semiconductor device according to claim 12, wherein the recess is formed. The surface recess includes a surface recess bottom surface facing the first or second main surface,
The method of manufacturing a semiconductor device according to claim 12, wherein the bottom surface of the surface recess is formed to have an angle inclined with respect to the second main surface.   The bottom surface of the surface recess has a minimum distance from the second main surface at a center portion of the surface recess in a direction intersecting the extending direction of the cleavage line in plan view, and the first or second main surface The method of manufacturing a semiconductor device according to claim 15, wherein the semiconductor device is formed to have an inclined angle with respect to the surface.   The method of manufacturing a semiconductor device according to claim 12, wherein the recess includes a back recess formed in the second main surface. Forming a pair of dummy patterns on the first main surface of the dummy formation region so as to sandwich the cleavage line;
The method of manufacturing a semiconductor device according to claim 17, wherein in the step of forming the recess, the back surface recess is formed so as to overlap at least a part of both of the pair of dummy patterns in a plan view.

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