JP6029310B2 - Thermosetting resin composition for semiconductor bonding and semiconductor device - Google Patents

Description

  The present invention relates to a thermosetting resin composition for semiconductor bonding and a semiconductor device using the same.

  In a semiconductor device, a process of fixing a semiconductor element (hereinafter also referred to as a semiconductor chip) such as an LED, IC, LSI or the like to a predetermined portion on a thin metal plate (lead frame) is an important process that affects the reliability of the semiconductor device. one of. Conventionally, as this connection method, a method of using a paste-like resin composition in which a filler is dispersed in an organic material as an adhesive is known.

  The resin composition used in this bonding technique is required to have excellent adhesion between the semiconductor element and the lead frame, and to have a low elastic modulus to alleviate the difference in linear expansion coefficient between the semiconductor element and the lead frame. The use of a low-elasticity resin composition is a particularly important characteristic for improving the solder crack resistance characteristics of a semiconductor device.

  As a low elasticity paste-like composition, for example, one using a low-stress modified acrylate, rubber or the like is known (for example, Patent Document 1). However, these compositions have a problem that the adhesiveness is lowered at the same time as the stress reduction. For this reason, the resin composition which made low stress and high adhesion compatible is calculated | required.

JP 2007-131751 A

  The present invention has been made to meet the above requirements, and has a low elastic modulus and high adhesion thermosetting resin composition for semiconductor bonding, and resistance to heat using such a thermosetting resin composition for semiconductor bonding. It aims at providing the semiconductor device excellent in solder crack property.

（式中、Ｒ^１およびＲ^２はそれぞれ炭素数１〜２０の２価の有機残基を表し、Ｘ^１およびＸ^２はそれぞれラジカル重合性不飽和結合を有する１価の有機基を表し、Ｙ^１およびＹ^２はそれぞれ硫黄原子、窒素原子又はＮＨ基を表し、ｎは１〜３の整数、ｍは前記Ｙ^１が硫黄原子またはＮＨ基であるときは１を、窒素原子であるときは２を表し、ｏは前記Ｙ^２が硫黄原子またはＮＨ基であるときは１を、窒素原子であるときは２を表す。）および（Ｅ）充填剤を含有することを特徴としている。 The thermosetting resin composition for semiconductor adhesion of the present invention comprises (A) a hydrocarbon compound having a number average molecular weight of 500 or more and 30000 or less and having a double bond in the molecular skeleton, or a derivative thereof; Group-containing polymerizable monomer, (C) radical polymerization catalyst, (D) thiadiazolyl disulfide compound represented by the following general formula (1)

(Wherein R ¹ and R ² each represent a divalent organic residue having 1 to 20 carbon atoms, X ¹ and X ² each represent a monovalent organic group having a radical polymerizable unsaturated bond, Y ¹ and Y ² each represent a sulfur atom, a nitrogen atom or an NH group, n is an integer of 1 to 3, m is ¹ when the Y ¹ is a sulfur atom or an NH group, and 2 is a nitrogen atom. O represents 1 when Y ² is a sulfur atom or an NH group, and ² when Y ² is a nitrogen atom.) And (E) It contains a filler.

  A semiconductor device according to another embodiment of the present invention is characterized in that a semiconductor element is bonded onto a semiconductor element support member by the thermosetting resin composition for semiconductor bonding.

  According to one embodiment of the present invention, a thermosetting resin composition for semiconductor adhesion having a low elastic modulus and high adhesion can be obtained. According to another embodiment of the present invention, a semiconductor device having excellent solder crack resistance can be obtained.

It is sectional drawing which shows the semiconductor device of one Embodiment of this invention.

  Hereinafter, the present invention will be described in detail.

  The component (A) used in the thermosetting resin composition for semiconductor adhesion of the present invention is a hydrocarbon compound having a double bond in the molecular skeleton or a derivative thereof such as butyl rubber (BR), isoprene rubber ( IR), diene rubbers such as polybutadiene, or hydrogenated derivatives thereof, but are not limited thereto. In the present invention, in order to impart flexibility, the hydrocarbon compound or derivative thereof as component (A) has a number average molecular weight of 500 or more and 30000 or less, preferably 500 or more and 20000 or less, more preferably Is 500 or more and 15000 or less. When the number average molecular weight is less than 500, the flexibility is lowered and the heat resistance is also lowered. On the other hand, when it exceeds 30000, the workability during preparation of the composition and the coating workability during use tend to be poor. As the component (A), those which are liquid at room temperature and have at least one acrylic group or methacryl group in one molecule are particularly preferable. As the component (A), one type may be used alone, or two or more types may be mixed and used.

  The polymerizable monomer of the component (B) used in the thermosetting resin composition for semiconductor adhesion of the present invention has an ethylenically unsaturated group, such as alicyclic (meth) acrylic acid ester, fat Group (meth) acrylic acid ester, aromatic (meth) acrylic acid ester, and the like, but are not limited thereto. Specifically, for example, 1,6-hexanediol dimethacrylate, 1,9-nonanediol dimethacrylate, phenoxydiethylene glycol dimethacrylate, lauryl acrylate, stearyl acrylate, phenoxyethyl methacrylate and the like are used. As the component (B), one type may be used alone, or two or more types may be mixed and used.

  The blending amount of the component (B) is a range in which the ratio of the total mass of the component (A) and the component (B) is 10 to 90% by mass, that is, the mass ratio of the component (A) and the component (B). A range of 10:90 to 90:10 is preferred. When the proportion of the component (B) is less than 10% by mass, the viscosity of the thermosetting resin composition for semiconductor bonding is increased and workability is lowered. Moreover, when it exceeds 90 mass%, there exists a possibility that a problem may arise in adhesiveness. More preferably, the mass ratio of the component (A) to the component (B) is in the range of 20:80 to 80:20.

  The radical polymerization catalyst of component (C) used in the thermosetting resin composition for semiconductor adhesion of the present invention can be used without any particular limitation as long as it is a catalyst generally used for radical polymerization. Preferably, the decomposition temperature in the rapid heating test (decomposition start temperature when 1 g of the sample is placed on an electric heating plate and heated at 4 ° C./min) is 40 to 140 ° C. When the decomposition temperature is less than 40 ° C., the preservability at room temperature of the thermosetting resin composition for semiconductor bonding becomes poor, and when it exceeds 140 ° C., the curing time may become extremely long.

  Examples of the radical polymerization catalyst that satisfies the above conditions include 1,1-bis (t-butylperoxy) -2-methylcyclohexane, t-butylperoxyneodecanoate, dicumyl peroxide, and the like. . These may be used alone or in combination of two or more in order to control curability.

  In the present invention, a polymerization inhibitor may be added in advance before adding the radical polymerization catalyst, in order to prevent a decrease in storage stability of the thermosetting resin composition for semiconductor adhesion. Examples of such polymerization inhibitors include hydroquinone, methylhydroquinone, dibutylhydroxytoluene (BHT) and the like.

  0.1-10 mass parts is preferable with respect to 100 mass parts of total mass of (A) component and (B) component, and, as for the compounding quantity of this (C) component, 0.5-8 mass parts is more preferable. If the amount is less than 0.1 parts by mass, the curability may be remarkably reduced. If the amount exceeds 10 parts by mass, the change in the viscosity of the thermosetting resin composition for semiconductor bonding may increase with time, and the workability may decrease. is there.

（式中、Ｒ^１およびＲ^２はそれぞれ炭素数１〜２０の２価の有機残基を表し、Ｘ^１およびＸ^２はそれぞれラジカル重合性不飽和結合を有する１価の有機基を表し、Ｙ^１およびＹ^２はそれぞれ硫黄原子、窒素原子又はＮＨ基を表し、ｎは１〜３の整数、ｍは前記Ｙ^１が硫黄原子またはＮＨ基であるときは１を、窒素原子であるときは２を表し、ｏは前記Ｙ^２が硫黄原子またはＮＨ基であるときは１を、窒素原子であるときは２を表す。）であり、このような特定の構造を有する化合物を含有するプライマーまたは接着剤は、上記課題を解決するのに適し、金、銀、白金、パラジウム等の貴金属およびそれらの合金に対し、スズ電析や酸化処理等の煩雑な処理を施すことなく、強力かつ耐久的な接着性を発現できるだけでなく、優れた可とう性を有する。また、この（Ｄ）成分は上記（Ｂ）成分には含まれない。 The component (D) used in the thermosetting resin composition for semiconductor adhesion of the present invention is a thiadiazolyl disulfide compound represented by the following general formula (1)

(Wherein R ¹ and R ² each represent a divalent organic residue having 1 to 20 carbon atoms, X ¹ and X ² each represent a monovalent organic group having a radical polymerizable unsaturated bond, Y ¹ and Y ² each represent a sulfur atom, a nitrogen atom or an NH group, n is an integer of 1 to 3, m is ¹ when the Y ¹ is a sulfur atom or an NH group, and 2 is a nitrogen atom. O represents 1 when Y ² is a sulfur atom or an NH group, and ² when Y ² is a nitrogen atom.), And primer or adhesion containing a compound having such a specific structure The agent is suitable for solving the above-mentioned problems, and is powerful and durable without subjecting noble metals such as gold, silver, platinum, palladium and their alloys and complicated treatments such as tin electrodeposition and oxidation treatment. Not only can it exhibit adhesive properties, Having sex. The component (D) is not included in the component (B).

Here, R ¹ and R ² represent a divalent organic residue having 1 to 20 carbon atoms, specifically, a linear or branched alkylene group, or a main chain of the alkylene group. Examples thereof include an oxyalkylene group containing oxygen and a group containing a carboxyl group in the main chain of the alkylene group. More specifically, a group represented by the following chemical formula is exemplified.

（式中、ｈは１〜２０の整数、ｉは１〜９の整数、ｊは１〜５の整数、ｋは１〜４の整数、ｌは１〜４の整数をそれぞれ表す。）

(In the formula, h represents an integer of 1 to 20, i represents an integer of 1 to 9, j represents an integer of 1 to 5, k represents an integer of 1 to 4, and l represents an integer of 1 to 4.)

X ¹ and X ² represent a monovalent organic group having a radical polymerizable unsaturated bond, and specific examples include a methacryloyloxy group, an acryloyloxy group, and a 4-vinylbenzyloxy group.

  Specific examples of the thiadiazolyl disulfide compound that is the component (D) used in the present invention include the following compounds.

  As the component (D), a thiadiazolyl disulfide compound represented by the following general formula (2) is particularly preferably used in terms of adhesive strength, solubility, and ease of synthesis.

（式中、Ｗはメタクリロイルオキシ基、アクリロイルオキシ基、４−ビニルベンジルオキシ基を表し、ｐは６〜１１の整数を表す。）

(Wherein, W represents a methacryloyloxy group, an acryloyloxy group, and a 4-vinylbenzyloxy group, and p represents an integer of 6 to 11.)

  The compounding amount of the component (D) is preferably 0.01 to 20 parts by mass and more preferably 0.05 to 10 parts by mass with respect to 100 parts by mass of the total mass of the component (A) and the component (B). If the amount is less than 0.01 part by mass, sufficient adhesion may not be obtained. If the amount exceeds 20 parts by mass, the heat resistance of the cured product may be reduced. Moreover, this (D) component may be used individually by 1 type, and 2 or more types may be mixed and used for it.

In the present invention, for example, when Y ¹ and Y ² are sulfur, the thiadiazolyl disulfide is 3 containing a methanol solution of 2,5-dimercapto-1,3,4-thiadiazole under a nitrogen atmosphere. A methanol solution of sodium methoxide is slowly dropped into a necked flask at room temperature using a dropping funnel, and further, a radical polymerizable unsaturated bond is attached to the end of X ¹ -R ¹ -Br, X ² -R ² -Br, etc. A methanol solution of a halide having X (X ¹ , X ² , R ¹ , R ² is the same as above) was slowly added dropwise, heated to reflux for 3 hours, allowed to cool to room temperature, and then the reaction mixture Water is added to the reaction to stop the reaction, and methanol is distilled off from the reaction system under reduced pressure.

  The filler of the component (E) used in the thermosetting resin composition for semiconductor bonding of the present invention may be either inorganic or organic, and conventionally known fillers can be used. Examples of the inorganic filler include metal powder such as silver powder, gold powder, copper powder, aluminum powder, and nickel powder, and fused silica, crystalline silica, silicon nitride, alumina, aluminum nitride, calcium carbonate, and the like. Among these inorganic fillers, metal powder is mainly used for imparting conductivity and thermal conductivity. Examples of the organic filler include a silicone resin, a fluororesin such as polytetrafluoroethylene, an acrylic resin such as polymethyl methacrylate, a cross-linked product of benzoguanamine, melamine, and formaldehyde. Furthermore, a composite material of an organic compound and an inorganic compound, such as a composite material of silica and an acrylic resin, or a metal coating on the surface of an organic filler is used. These fillers may be surface-treated with a silane coupling material such as alkoxysilane, acyloxysilane, silazane, organoaminosilane, or the like in order to improve dispersibility and the like. These fillers may be used individually by 1 type, and 2 or more types may be mixed and used for them.

  As the filler of component (E), silver powder is particularly easily available for conductive use, has many types of shapes and particle sizes, has good conductivity, and changes in conductivity even when heated. This is preferable. For insulating applications, silica is particularly preferable from the viewpoint of availability and variety. These fillers preferably have a content of ionic impurities such as halogen ions and alkali metal ions of 10 ppm or less. Further, the shape of the filler is not particularly limited, and for example, a flake shape, a scale shape, a dendritic shape, a spherical shape, or the like is used. Further, the particle size is not particularly limited, and for example, a nanoscale particle having a particle size of about 1 to 100 nm is used.

  As for the compounding quantity of this (E) component, 1-300 mass parts is preferable with respect to 100 mass parts of total mass of (A) component and (B) component. By setting the blending amount to be 1 part by mass or more, it is possible to suppress the expansion coefficient of the cured product from becoming excessively large and improve the reliability of adhesion. Moreover, by setting it as 300 mass parts or less, it can suppress that a viscosity becomes large too much and can make workability | operativity favorable.

  In the thermosetting resin composition for semiconductor adhesion of the present invention, in addition to the above components, a curing accelerator, rubber or silicone generally blended in this type of composition as long as the effects of the present invention are not impaired. A low stress agent such as a coupling agent, an antifoaming agent, a surfactant, a colorant (pigment, dye), a flame retardant, and other various additives can be blended as necessary. Various solvents can also be appropriately blended as necessary. Each of these additives may be used alone or in combination of two or more.

  The thermosetting resin composition for semiconductor adhesion according to the present invention comprises the above components (A) to (E), and additives such as a coupling agent blended as necessary. It can be prepared by performing a kneading process using a Perth, a kneader, a three-roll mill or the like and then defoaming.

  The thermosetting resin composition for semiconductor bonding of the present invention has a low elastic modulus and excellent adhesion, and by using this, it is possible to obtain a semiconductor device having particularly improved solder crack resistance compared to the prior art. .

Next, the semiconductor device of the present invention will be described.
The semiconductor device of the present invention includes, for example, mounting a semiconductor element on a lead frame via the thermosetting resin composition for bonding semiconductors of the present invention, and heating and curing the thermosetting resin composition for bonding semiconductors. It can be manufactured by connecting the lead part of the frame and the electrode on the semiconductor element by wire bonding and then sealing them with a sealing resin. Examples of the bonding wire include a wire made of copper, gold, aluminum, gold alloy, aluminum-silicon, or the like. Moreover, the temperature at the time of hardening an electrically conductive paste is 150-250 degreeC normally, and it is preferable to heat about 0.5-2.

  FIG. 1 shows an example of the semiconductor device of the present invention obtained as described above. Between the lead frame 1 such as a copper frame and the semiconductor element 2, the thermosetting resin for semiconductor bonding of the present invention is shown. An adhesive layer 3 that is a cured product of the composition is interposed. Further, the electrode 4 on the semiconductor element 2 and the lead portion 5 of the lead frame 1 are connected by a bonding wire 6, and these are further sealed by a sealing resin 7. In addition, as thickness of the adhesive bond layer 3, about 10-30 micrometers is preferable.

  The semiconductor device of the present invention is excellent in solder crack resistance and high reliability because the semiconductor element is bonded and fixed by the thermosetting resin composition for semiconductor bonding having a low elastic modulus and excellent adhesion. It has.

  EXAMPLES Next, although an Example demonstrates this invention further in detail, this invention is not limited to these Examples at all.

Example 1
Under a nitrogen atmosphere, 40 ml of a methanol solution in which 1.5 g (10.0 mmol) of 2,5-dimercapto-1,3,4-thiadiazole was dissolved was placed in a 300 ml three-necked flask. 15 ml of a methanol solution in which 54 g (10.0 mmol) was dissolved was slowly added dropwise at room temperature using a dropping funnel. Subsequently, 15 ml of a methanol solution of 3.19 g (10.0 mmol) of 11-bromoundecyl methacrylate was slowly added dropwise. After completion of dropping, the mixture was heated to reflux for 3 hours. Then, it stood to cool to room temperature, water was added to the reaction mixture, and reaction was stopped. Methanol was distilled off from the reaction system under reduced pressure, the aqueous layer was extracted with ether, and the combined organic layer was washed with saturated brine. After drying over anhydrous magnesium sulfate and evaporating the solvent under reduced pressure, 3.56 g of 2- (11-methacryloyloxyundecylthio) -5-mercapto-1,3,4-thiadiazole was obtained as a pale yellow solid.

  A 300 ml three-necked flask contains 150 ml of a methanol solution in which 2.85 g (7.35 mmol) of 2- (11-methacryloyloxyundecylthio) -5-mercapto-1,3,4-thiadiazole obtained was dissolved. Then, 1.2 g (11.1 mmol) of 31% by mass hydrogen peroxide was slowly added dropwise using a dropping funnel. After completion of the dropwise addition, the mixture was stirred at room temperature for 1 hour. Thereafter, the solid precipitated from the reaction system was filtered. The obtained solid was washed with methanol and dried to obtain 1.85 g of a thiadiazolyl disulfide compound (hereinafter referred to as thiadiazolyl sulfide compound I) represented by the formula (A).

  1 part by mass of this thiadiazolyl sulfide compound I, 70 parts by mass of “MM-1000-80” (trade name, number average molecular weight 1000, manufactured by Nippon Petrochemical Co., Ltd.) as acrylic-modified polybutadiene, 2-methacryloyloxyethyl succinic acid As “light ester HO-MS” (trade name, manufactured by Kyoeisha Chemical Co., Ltd.) 30 parts by mass, as dicumyl peroxide “park mill D” (trade name, manufactured by NOF Corporation, decomposition temperature in rapid heating test 175 ° C.) 1 part by weight, 0.2 parts by weight of “KBM-403” (trade name, manufactured by Shin-Etsu Chemical Co., Ltd.) as alkoxysilane and 250 parts by weight of silver powder (particle size 0.1 to 30 μm, average particle size 3 μm, flake shape) Were mixed well and further kneaded with three rolls to prepare a thermosetting resin composition for semiconductor bonding.

(Example 2)
Example 1 except that 180 parts by mass of silica powder (average particle size 3 μm, maximum particle size 20 μm, spherical) was used instead of silver powder, and the amount of alkoxysilane “KBM-403” was 0.5 parts by mass. In the same manner as above, a thermosetting resin composition for semiconductor bonding was prepared.

Example 3
Semiconductor adhesion in the same manner as in Example 1, except that 70 parts by mass of acrylic-modified hydrogenated polybutadiene “TEAI-1000” (trade name, number average molecular weight 2250, manufactured by Nippon Soda Co., Ltd.) was used instead of acrylic-modified polybutadiene. A thermosetting resin composition was prepared.

Example 4
Thermosetting for semiconductor bonding in the same manner as in Example 1 except that 70 parts by mass of methacryl-modified polyisoprene “UC-102” (trade name, number average molecular weight 17000, manufactured by Kuraray Co., Ltd.) was used instead of acrylic-modified polybutadiene. A mold resin composition was prepared.

(Example 5)
In place of thiadiazolyl disulfide compound I, a semiconductor was prepared in the same manner as in Example 1, except that 1 part by mass of thiadiazolyl disulfide compound represented by formula (B) (hereinafter referred to as thiadiazolyl disulfide compound II) was used. A thermosetting resin composition for adhesion was prepared.

(Example 6)
A thermosetting resin composition for semiconductor adhesion was prepared in the same manner as in Example 1 except that the amount of the thiadiazolyl disulfide compound I was 5 parts by mass.

(Comparative Example 1)
A thermosetting resin composition for semiconductor adhesion was prepared in the same manner as in Example 1 except that the thiadiazolyl disulfide compound was not blended and the amount of alkoxysilane “KBM-403” was 0.5 parts by mass. .

(Comparative Example 2)
A thermosetting resin composition for semiconductor adhesion was prepared in the same manner as in Example 2 except that the thiadiazolyl disulfide compound was not blended and the amount of alkoxysilane "KBM-403" was 0.5 parts by mass. .

  About the thermosetting resin composition for semiconductor adhesion obtained in each of the above Examples and Comparative Examples, various characteristics were evaluated by the methods described below.

(1) Initial viscosity The viscosity of the thermosetting resin composition for semiconductor bonding immediately after the preparation is measured using an E-type viscometer (3 ° cone) manufactured by Toki Sangyo Co., Ltd. at 25 ° C. and 2.5 rpm. It was measured.

(2) Tensile elasticity modulus About the film-like test piece (20 mm x 4 mm x 0.1 mm) produced by heating and hardening the obtained thermosetting resin composition for semiconductor adhesion at 150 degreeC for 30 minutes, Seiko Instruments Inc. The tensile elastic modulus at 25 ° C. was measured using a dynamic viscoelasticity measuring device DMS6100 manufactured by KK). The measurement conditions are as follows.
Measurement temperature: -100 to 300 ° C
Temperature increase rate: 5 ° C / min Frequency: 10Hz
Load: 100mN

(3) Pot life The obtained thermosetting resin composition for semiconductor bonding was left in a thermostatic bath at 25 ° C., and the number of days until the viscosity increased to 1.5 times or more of the initial viscosity was examined.

(4) Adhesion strength during heating The obtained thermosetting resin composition for semiconductor adhesion was applied to a copper frame to a thickness of 20 μm, and a 2 mm × 2 mm semiconductor chip (silicon chip) was mounted thereon, at 200 ° C. A connection sample was prepared by heating and curing for 60 minutes. The connection sample was measured at 260 ° C. using a bond tester SS-100KP manufactured by Seishin Shoji Co., Ltd.

(5) Solder reflow resistance The obtained thermosetting resin composition for semiconductor bonding is applied to a copper frame to a thickness of 20 μm, and a 6 mm × 6 mm semiconductor chip (silicon chip, surface aluminum wiring only) is mounted thereon. And then cured by heating at 200 ° C. for 60 minutes, and then sealed with an epoxy resin sealing material (trade name: KE-G1200) manufactured by Kyocera Chemical Co., Ltd., and a semiconductor package (80 pQFP, 14 mm × 20 mm × 2 mm) ) Was produced. For sealing, first, transfer molding was performed under the conditions of 1 MPa at 175 ° C. for 2 minutes, and then post-curing was performed at 175 ° C. for 8 hours. This package was subjected to moisture absorption treatment at 85 ° C., 85% RH and 168 hours, followed by IR reflow treatment (260 ° C., 10 seconds), and the presence or absence of external cracks in the package (package surface cracks) was observed with a microscope ( (Magnification: 15 times) and the number of occurrences was examined. Further, the occurrence of internal cracks (chip cracks) in the package was observed with an ultrasonic microscope, and the number of occurrences was examined (n = 5).

These results are shown in Table 1 together with the composition of the thermosetting resin composition for semiconductor adhesion.

  As is clear from Table 1, the thermosetting resin composition for semiconductor bonding of the examples has a low elastic modulus and high adhesion, and a semiconductor device using the same has a solder reflow resistance. It was excellent in nature.

DESCRIPTION OF SYMBOLS 1 ... Lead frame, 2 ... Semiconductor element, 3 ... Adhesive layer, 4 ... Electrode, 5 ... Lead part, 6 ... Bonding wire, 7 ... Sealing resin

Claims (5)

(A) A hydrocarbon compound or derivative thereof that is liquid at room temperature, has at least one acryl group or methacryl group in one molecule, has a number average molecular weight of 500 to 30,000, and has a double bond in the molecular skeleton. , (B) a polymerizable monomer having an ethylenically unsaturated group, (C) a radical polymerization catalyst, (D) a thiadiazolyl disulfide compound represented by the following general formula (1)

(Wherein R ¹ and R ² each represent a divalent organic residue having 1 to 20 carbon atoms, X ¹ and X ² each represent a monovalent organic group having a radical polymerizable unsaturated bond, Y ¹ and Y ² each represent a sulfur atom, a nitrogen atom or an NH group, n is an integer of 1 to 3, m is ¹ when the Y ¹ is a sulfur atom or an NH group, and 2 is a nitrogen atom. And o represents 1 when Y ² is a sulfur atom or NH group, and ² when Y ² is a nitrogen atom.) And (E) a heat for bonding semiconductors, containing a filler A curable resin composition. 2. The thermosetting resin composition for semiconductor bonding according to claim 1 , wherein the mass ratio of the component (A) to the component (B) is 10:90 to 90:10. The heat | fever for semiconductor adhesion of Claim 1 or 2 containing 0.01-20 mass parts of said (D) component with respect to 100 mass parts of total amounts of said (A) component and (B) component. A curable resin composition. 0.1 to 10 parts by mass of the component (C) and 1 to 300 parts by mass of the component (E) with respect to 100 parts by mass of the total amount of the component (A) and the component (B) The thermosetting resin composition for semiconductor bonding according to claim 3 . 5. A semiconductor device comprising a semiconductor element bonded to a semiconductor element support member with the thermosetting resin composition for semiconductor bonding according to claim 1 .

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