JP6028768B2 - Solid-state imaging device, manufacturing method of solid-state imaging device, and electronic apparatus - Google Patents

Description

  The present invention relates to a solid-state imaging device, a method for manufacturing a solid-state imaging device, and an electronic apparatus.

  A camera such as a digital video camera or a digital still camera includes a solid-state imaging device. For example, the solid-state imaging device includes a CMOS (Complementary Metal Oxide Semiconductor) type image sensor and a CCD (Charge Coupled Device) type image sensor.

  In a solid-state imaging device, an imaging region in which a plurality of pixels are formed is provided on the surface of a semiconductor substrate. In this imaging region, a plurality of photoelectric conversion units that receive light from the subject image and generate signal charges by photoelectrically converting the received light are formed so as to correspond to the plurality of pixels. For example, a photodiode is formed as the photoelectric conversion unit.

  Among the solid-state imaging devices, the CCD image sensor is provided with a vertical transfer register unit between a plurality of pixel rows arranged in the vertical direction. The vertical transfer register unit is provided with a plurality of transfer electrodes in the vertical transfer channel region so as to face each other through a gate insulating film, and the signal charge read from the photoelectric conversion unit by the charge reading unit is vertically transmitted. Forward. The horizontal transfer register unit sequentially transfers the signal charges transferred for each horizontal line (pixels in one row) by the vertical transfer register unit in the horizontal direction, and the output unit outputs the signal charges.

  In addition, among solid-state imaging devices, a CMOS image sensor has pixels configured to include a plurality of transistors in addition to the photoelectric conversion unit. The plurality of transistors are configured as pixel transistors so that the signal charges generated by the photoelectric conversion unit are read and output as electric signals to the signal lines. In addition, in the CMOS type image sensor, in order to reduce the pixel size, it has been proposed to configure the pixels so that a plurality of photoelectric conversion units share the pixel transistor. For example, a technique in which two or four photoelectric conversion units share one pixel transistor group has been proposed (see, for example, Patent Document 1).

  In a solid-state imaging device, a “surface irradiation type” is generally known in which a photoelectric conversion unit receives light incident from the surface side where circuit elements, wirings, and the like are provided on a semiconductor substrate. In the case of the “surface irradiation type”, it may be difficult to improve sensitivity because light incident on circuit elements or wirings is shielded or reflected. For this reason, a “backside illumination type” has been proposed in which a photoelectric conversion unit receives light incident from the back side opposite to the surface on which a circuit element or wiring is provided in a semiconductor substrate (for example, Patent Documents). 2).

  In the solid-state imaging device as described above, the cell size of each pixel is becoming smaller as the number of pixels increases. As a result, the amount of received light may be reduced per pixel.

  Therefore, a so-called on-chip lens is provided to increase the light collection efficiency and increase the amount of light received. That is, the microlens which condenses light to the light-receiving surface of a photoelectric conversion part is provided so that it may correspond to each pixel (for example, refer patent document 3, 4).

  In the microlens formation process, for example, a microlens material made of a photosensitive resin is patterned by a photolithography technique on a planarizing film (or an undercoat of the microlens) placed on a color filter. Thereafter, bleaching exposure is performed on the processed microlens material, and then a reflow process is performed to form a microlens (see, for example, Patent Documents 5, 7, and 8).

  In addition, the microlens is formed by forming a mask layer on the lens base material film and then performing an etching process on the lens base material film using the mask layer. Specifically, first, after forming a photosensitive resin film on the lens base material film, pattern processing is performed by photolithography so as to correspond to a region where a microlens is to be formed, thereby forming a resist pattern. Thereafter, a reflow process for heating and melting the resist pattern is performed, and the mask pattern is formed by deforming the resist pattern into a lens shape. Then, by etching back both the resist pattern deformed into the mask layer and the lens base material film, the lens base material film located under the mask layer is processed into a microlens (for example, a patent) Reference 9 and 10).

JP 2004-172950 A JP 2003-31785 A JP 2000-039503 A JP 2000-206310 A JP 2003-222705 A JP 2007-316153 A Japanese Patent Laid-Open No. 2007-294779 JP 2007-025383 A Japanese Patent No. 4186238 JP 2007-53318 A

  However, when a microlens is formed by performing the reflow process on the patterned lens base material film (the former manufacturing method), there are problems such as an increase in cost and difficulty in stable manufacturing. May occur. In particular, when various measures are taken to prevent the adjacent microlenses from being fused and deformed due to the reflow process, the occurrence of this problem becomes obvious. For example, an expensive photomask is required (Patent Document 6), and the cost may increase due to factors such as an increase in the number of processes and a need for new equipment investment. Moreover, it may be difficult to stably manufacture a product due to variations in material lots of new materials and variations in process conditions (see, for example, Patent Documents 4 to 7).

  In addition, when a microlens is formed by etching back a lens base material film using a mask layer processed into a lens shape (the latter manufacturing method), the same problem as described above may occur. In this manufacturing method, the effective area of the microlens can be easily enlarged. However, in the diagonal direction of the microlens, the distance between the lenses is longer than that in the side direction, and thus a long-time etch back is required. For this reason, degradation of dark current etc. is caused and the image quality of a captured image may fall (for example, refer patent documents 8-9).

  Thus, in the manufacture of microlenses, it may be difficult to form with high definition, and it may not be easy to improve the light collection efficiency. Furthermore, problems such as an increase in cost and a decrease in manufacturing efficiency may occur.

  Due to these, the image quality of the captured image may deteriorate. Specifically, in the case of the CCD type, there are cases where problems such as a decrease in sensitivity and occurrence of smear, shading, and color mixing occur.

  FIG. 25 is a diagram showing a result of optical simulation by FTDT. Here, in the CCD type solid-state imaging device, the results of sensitivity and smear characteristics when the pixel size is a square lattice of 1.55 μm and the film thickness of the microlens is changed are shown.

  As shown in FIG. 25, when the microlens is thickened, the sensitivity is increased, but the smear characteristic is deteriorated. For this reason, it has been difficult to improve the image quality by improving the characteristics of both.

  In the case of the CMOS type, there may be a problem such as a decrease in sensitivity and the occurrence of color mixing.

  In particular, in the case of the above-described “backside illumination type”, the occurrence of problems due to color mixture between adjacent pixels may be significant.

  As described above, it may be difficult to improve the image quality of the captured image.

  Therefore, according to the present invention, a solid-state imaging device, a manufacturing method of the solid-state imaging device, and an electronic apparatus that can improve the light collection efficiency by forming the microlens with high definition and can easily improve the image quality of the captured image. Provide a lens array.

According to the present invention, the image pickup surface of the substrate is arranged side by side in each of the first direction and the second direction orthogonal to the first direction, and according to the light received incident light on the light receiving surface. A plurality of photoelectric conversion units that generate signal charges, and on the incident light incident side of each light receiving surface of the plurality of photoelectric conversion units, are arranged at positions corresponding to the plurality of photoelectric conversion units, Provided in a region that separates between the plurality of microlenses that collect the incident light onto the light receiving surface and the adjacent photoelectric conversion unit on the imaging surface, and is connected to the corresponding photoelectric conversion unit, and the corresponding A plurality of pixel transistors including a transfer transistor, an amplification transistor, a selection transistor, and a reset transistor, respectively, which read out and output signal charges generated by the photoelectric conversion unit,
The transfer transistor constituting the pixel transistor is connected to the photoelectric conversion unit in the vicinity of the photoelectric conversion unit,
Transistors other than the transfer transistor constituting the pixel transistor are disposed in a transistor region at a position separated from a position where the transfer transistor is disposed,
It said plurality of microlenses each is a square shape including the segmented portions by the sides a planar shape in the imaging surface extending in the second direction and sides extending in the first direction, the light receiving It has a shape of a convex lens center is thicker than the edge in the depth direction from the surface in the photoelectric conversion unit, the photoelectric conversion unit that corresponds Te smell each of the first direction and the second direction It is arranged side by side so as to collect incident light,
The depth of the groove in the depth direction of the end portion of the microlens in the third direction inclined by 45 degrees with respect to the first direction and the second direction is determined by the microlens in the first direction and the second direction. Deeper than the depth of the groove in the depth direction at the end ,
The curvature of the lens surface at the end of the micro lens in the third direction is greater than the curvature of the lens surface of the micro lens in the first direction and the second direction ;
A solid-state imaging device is provided.

According to the present invention, a method for manufacturing the solid-state imaging device is provided.

  Preferably, the microlens forming step includes a lens base material film forming step for forming a lens base material film on the substrate, a resist pattern forming step for forming a resist pattern on the lens base material film, and the resist pattern. A lens base for patterning the lens base material film into the microlens by performing a heat reflow processing step for performing a heat reflow processing and an etch back processing for etching back the reflowed resist pattern and the lens base material film. Material film processing step.

Preferably, in the thermal reflow processing step, the plurality of photoelectric conversion portions on the imaging surface maintain a state where the resist patterns of the portions arranged without the transfer transistors are spaced apart, and in other portions A thermal reflow process is performed on the resist patterns so that the aligned resist patterns are fused to each other.

Further preferably, in the thermal reflow processing step, post-baking processing is performed a plurality of times as the thermal reflow processing, and post-baking processing to be performed later among the plurality of post-baking processing is performed before Each post-bake treatment is performed so that the heat treatment temperature is higher than the post-bake treatment to be performed.

According to the present invention, an electronic apparatus having the solid-state imaging device is provided.

  The present invention comprises a plurality of microlenses arranged side by side in each of a first direction and a second direction orthogonal to the first direction, and includes a microlens that collects incident light. The shape includes a portion defined by a side extending in the first direction and a side extending in the second direction, and a plurality of shapes are mutually in the first direction and the second direction. The plurality of microlenses are arranged in contact with each other, and the depth of the grooves between the microlenses arranged in the third direction inclined with respect to the first direction and the second direction is the first direction. And the curvature of the lens surface in the third direction is higher than the curvature of the lens surface in the first direction. Ren It is an array.

  Preferably, in the plurality of microlenses, a depth of a groove between the microlenses arranged in the second direction is deeper than a depth of the groove between the microlenses arranged in the first direction. In addition, the curvature of the lens surface in the second direction is formed to be higher than the curvature of the lens surface in the first direction.

  In the present invention, since the microlens has a high curvature in the diagonal direction (the lens thickness is thick), for example, the incident light can be effectively applied to the light receiving surface from the diagonal direction in which smear does not easily occur in the CCD type. Can be condensed. Together with this, the sensitivity can be improved.

  The present invention provides a solid-state imaging device, a manufacturing method of the solid-state imaging device, an electronic apparatus, and a lens that can improve the light collection efficiency by forming a microlens with high definition and can easily improve the image quality of the captured image. An array can be provided.

FIG. 1 is a configuration diagram showing a configuration of a camera 200 in Embodiment 1 according to the present invention. FIG. 2 is a plan view illustrating the outline of the overall configuration of the solid-state imaging device 1 according to the first embodiment of the present invention. FIG. 3 is a diagram illustrating a main part of the solid-state imaging device 1 according to the first embodiment of the present invention. FIG. 4 is a diagram showing the color filter 51 in the first embodiment according to the present invention. FIG. 5 is a diagram showing the microlens 61 in the first embodiment according to the present invention. FIG. 6 is a diagram showing the microlens 61 in the first embodiment according to the present invention. FIG. 7 is a diagram illustrating a main part provided in each step of the manufacturing method of the solid-state imaging device 1 in the first embodiment according to the present invention. FIG. 8 is a diagram illustrating a main part provided in each step of the manufacturing method of the solid-state imaging device 1 in the first embodiment according to the present invention. FIG. 9 is a diagram showing a photomask used in the formation process of the resist pattern RP in the first embodiment according to the present invention. FIG. 10 is a diagram illustrating a main part of the solid-state imaging device according to the second embodiment of the present invention. FIG. 11 is a diagram illustrating a main part provided in each step of the manufacturing method of the solid-state imaging device in the second embodiment according to the present invention. FIG. 12 is a view showing a photomask used in the formation process of the resist pattern RP in the second embodiment according to the present invention. FIG. 13 is a diagram illustrating a main part of the solid-state imaging device according to the third embodiment of the present invention. FIG. 14 is a diagram illustrating a main part provided in each step of the manufacturing method of the solid-state imaging device in the third embodiment according to the present invention. FIG. 15 is a diagram illustrating a main part of the solid-state imaging device according to the fourth embodiment of the present invention. FIG. 16 is a diagram illustrating a main part of the solid-state imaging device according to the fourth embodiment of the present invention. FIG. 17 is a diagram illustrating a main part of the solid-state imaging device according to the fourth embodiment of the present invention. FIG. 18 is a diagram showing the microlens 61 in the fourth embodiment according to the present invention. FIG. 19 is a diagram showing a microlens 61 in Embodiment 4 according to the present invention. FIG. 20 is a diagram illustrating a main part of the solid-state imaging device in the embodiment according to the invention. FIG. 21 is a diagram illustrating a main part of the solid-state imaging device in the embodiment according to the invention. FIG. 22 is a diagram illustrating a main part of the solid-state imaging device in the embodiment according to the invention. FIG. 23 is a diagram illustrating a main part of the solid-state imaging device in the embodiment according to the invention. FIG. 24 is a diagram illustrating a main part of the solid-state imaging device in the embodiment according to the invention. FIG. 25 is a diagram showing a result of optical simulation by FTDT.

  Embodiments of the present invention will be described below with reference to the drawings.

The description will be given in the following order.
1. Embodiment 1 (when the curvature in the diagonal direction of the OCL is higher than that in the horizontal direction in the CCD type)
2. Embodiment 2 (CCD type in which the OCL diagonal and vertical curvatures are higher than the horizontal direction)
3. Embodiment 3 (in the case of a CCD type, the OCL shape is a kamaboko shape)
4). Embodiment 4 (in the case of CMOS type)
5). Other

<1. Embodiment 1>
(A) Device Configuration (A-1) Main Configuration of Camera FIG. 1 is a configuration diagram showing a configuration of a camera 200 in Embodiment 1 according to the present invention.

  As shown in FIG. 1, the camera 200 includes a solid-state imaging device 1, an optical system 202, a drive circuit 203, and a signal processing circuit 204.

  The solid-state imaging device 1 is configured to output signal charges generated by imaging light (subject image) H incident through an optical system 202 on an imaging surface PS as raw data. A detailed configuration of the solid-state imaging device 1 will be described later.

  The optical system 202 includes, for example, an optical lens and a diaphragm, and forms incident light H on the imaging surface PS of the solid-state imaging device 1.

  The drive circuit 203 outputs various drive signals to the solid-state imaging device 1 and the signal processing circuit 204 to drive the solid-state imaging device 1 and the signal processing circuit 204, respectively.

The signal processing circuit 204 generates a digital image for the subject image by performing signal processing on the raw data output from the solid-state imaging device 1.
(A-2) Overall Configuration of Solid-State Imaging Device FIG. 2 is a plan view showing an outline of the overall configuration of the solid-state imaging device 1 in Embodiment 1 according to the present invention.

  As shown in FIG. 2, the solid-state imaging device 1 is, for example, an interline type CCD image sensor, and the subject image is captured in the imaging area PA.

  In the imaging area PA, as shown in FIG. 2, a pixel P, a charge readout unit RO, and a vertical transfer register unit VT are formed.

  As shown in FIG. 2, a plurality of pixels P are provided in the imaging area PA, and each of the pixels P is arranged in a matrix in the horizontal direction x and the vertical direction y. The pixel P includes a photoelectric conversion element, receives light at the light receiving surface JS, and generates a signal charge. In addition, around the plurality of pixels P, an element separation unit SS is provided so as to separate the pixels P from each other. The pixel P is configured to generate signal charges by receiving light from the subject image and performing photoelectric conversion on the light receiving surface JS.

  As shown in FIG. 2, a plurality of charge readout units RO are provided in the imaging area PA so as to correspond to the plurality of pixels P, and the signal charges generated by the pixels P are transferred to the vertical transfer register unit VT. It is configured to read.

  As shown in FIG. 2, the vertical transfer register unit VT extends in the vertical direction y so as to correspond to a plurality of pixels P arranged in the vertical direction y in the imaging area PA. Further, the vertical transfer register unit VT is arranged between columns of pixels P arranged in the vertical direction y. A plurality of vertical transfer register units VT are provided in the imaging area PA, and the plurality of vertical transfer register units VT are arranged in the horizontal direction x so as to correspond to each of the plurality of pixels P arranged in the horizontal direction x. Yes. The vertical transfer register unit VT is a so-called vertical transfer CCD, and the signal charge is read from the pixel P via the charge reading unit RO, and the signal charge is sequentially transferred in the vertical direction y. The vertical transfer register unit VT has a plurality of transfer electrodes (not shown) arranged in the vertical direction y, and sequentially supplies, for example, four-phase drive pulse signals to the transfer electrodes arranged in the vertical direction. Thus, the signal charge is transferred. That is, the vertical transfer register unit VT is provided for each column of the plurality of pixels P arranged in the vertical direction y among the plurality of pixels P, and transfers the signal charge generated in each pixel P in the vertical direction y. A transfer channel region is formed on the imaging surface.

  At the lower end of the imaging area PA, a horizontal transfer register HT is arranged as shown in FIG. The horizontal transfer register unit HT extends in the horizontal direction x, and each of the plurality of vertical transfer register units VT sequentially transfers the signal charges transferred in the vertical direction y in the horizontal direction x. In other words, the horizontal transfer register unit HT is a so-called horizontal transfer CCD, and is driven by, for example, a two-phase drive pulse signal to transfer the signal charge transferred for each horizontal line (one row of pixels). To do.

  As shown in FIG. 2, an output unit OUT is formed at the left end of the horizontal transfer register unit HT. The output unit OUT converts the signal charges horizontally transferred by the horizontal transfer register unit HT into a voltage. And output as an analog image signal.

  The imaging area PA corresponds to the imaging surface PS shown in FIG.

(A-3) Detailed Configuration of Solid-State Imaging Device A detailed configuration of the solid-state imaging device 1 will be described.

  FIG. 3 is a diagram illustrating a main part of the solid-state imaging device 1 according to the first embodiment of the present invention. Here, FIG. 3 shows a cross section of the main part.

  As shown in FIG. 3, the solid-state imaging device 1 includes a substrate 101. The substrate 101 is, for example, an n-type silicon semiconductor substrate. Inside the substrate 101, a photodiode 21, a charge readout channel region 22R, a charge transfer channel region 23T, and a channel stopper region 24C are provided. ing.

  On the surface of the substrate 101, as shown in FIG. 3, a transfer electrode 31, a metal light shielding film 41, an in-layer lens 45, a color filter 51, and a microlens 61 are provided.

  Each part which comprises the solid-state imaging device 1 is demonstrated sequentially.

(1) About Photodiode 21 The photodiode 21 is provided on the substrate 101 so as to correspond to the pixel P as shown in FIG. That is, a plurality are arranged side by side in the horizontal direction x and the vertical direction y orthogonal to the horizontal direction x on the imaging surface of the substrate 101. The photodiode 21 is configured to receive light at the light receiving surface JS and generate signal charges by performing photoelectric conversion.

  Specifically, the photodiode 21 is provided in a portion located on the front surface side inside the substrate 101. Although not shown, the photodiode 21 includes, for example, an n-type semiconductor region (n) (not shown) and a p-type on a p-type semiconductor well region (p) (not shown) formed in the substrate 101. A semiconductor region (p +) (not shown) is formed in sequence.

  Here, the n-type semiconductor region (n) functions as a signal charge storage region. The p-type semiconductor region (p +) functions as a hole accumulation region, and is configured to suppress dark current from occurring in the n-type semiconductor region (n) that is the signal charge accumulation region.

  In the photodiode 21, the inner lens 45, the color filter 51, the microlens 61, and the like are provided above the light receiving surface JS with a material that transmits light. For this reason, the photodiode 21 receives the light H incident through each of these portions in turn at the light receiving surface JS, and generates a signal charge.

(2) Charge Read Channel Region 22R As shown in FIG. 3, the charge read channel region 22R is provided so as to correspond to the charge read portion RO so as to read the signal charge generated by the photodiode 21. It is configured.

  Specifically, as shown in FIG. 3, the charge readout channel region 22 </ b> R is provided adjacent to the photodiode 21 in a portion located on the inner surface side of the substrate 101.

  Here, the charge readout channel region 22R is disposed on the left side of the photodiode 21 in the horizontal direction x. For example, the charge readout channel region 22R is configured as a p-type semiconductor region.

(3) Charge Transfer Channel Region 23T As shown in FIG. 3, the charge transfer channel region 23T is provided so as to correspond to the vertical transfer register unit VT, and is read from the photodiode 21 by the charge reading unit RO. The signal charges are transferred in the charge transfer channel region 23T.

  Specifically, as shown in FIG. 3, the charge transfer channel region 23T is provided adjacent to the charge read channel region 22R in a portion located on the inner surface side of the substrate 101.

  Here, the charge transfer channel region 23T is arranged on the left side of the charge readout channel region 22R in the horizontal direction x. For example, the charge transfer channel region 23T is configured by providing an n-type semiconductor region (n) (not shown) on a p-type semiconductor well region (p) (not shown) inside the substrate 101.

(4) Channel stopper region 24C The channel stopper region 24C is provided so as to correspond to the element isolation portion SS, as shown in FIG.

  Specifically, the channel stopper region 24C is provided in a portion located on the surface side inside the substrate 101 as shown in FIG.

  Here, in the horizontal direction x, the channel stopper region 24C is on the left side of the charge readout channel region 22R, as shown in FIG. 2, and the photodiodes 21 arranged in the column adjacent to the charge readout channel region 22R. Between the two. In addition, a channel stopper region 24C is provided so as to correspond to the element isolation portion SS between the two photodiodes 21 arranged in the vertical direction y (see FIG. 2).

  The channel stopper region 24C is configured, for example, by providing a p-type semiconductor region (p +) (not shown) on a p-type semiconductor well region (p) (not shown) inside the substrate 101. A barrier is formed to prevent signal charges from flowing in and out.

(5) Transfer Electrode 31 As shown in FIG. 3, the transfer electrode 31 is provided on the surface of the substrate 101 so as to face through the gate insulating film Gx. The transfer electrode 31 is made of a conductive material. For example, the transfer electrode 31 is formed using a conductive material such as polysilicon, and is provided on the gate insulating film Gx formed of, for example, a silicon oxide film.

(6) Metal Shading Film 41 The metal shading film 41 is formed on the surface of the substrate 101 above the charge reading channel region 22R and the charge transfer channel region 23T as shown in FIG. Light incident on the region 22R and the charge transfer channel region 23T is shielded. Further, as shown in FIG. 3, the metal light-shielding film 41 is provided so as to cover the transfer electrode 31 via the insulating film Sz.

  Here, the metal light shielding film 41 is formed above the substrate 101 in a region other than the region corresponding to the light receiving surface JS. Each of the metal light shielding films 41 is made of a light shielding material that shields light. For example, the metal light shielding film 41 is formed using a metal material such as tungsten or aluminum.

(7) Regarding In-Layer Lens As shown in FIG. 3, the in-layer lens 45 is provided above the surface of the substrate 101 so as to correspond to the light receiving surface JS. A plurality of intra-layer lenses 45 are arranged in the same shape so as to correspond to the plurality of pixels P arranged in the imaging area PA.

  Here, the inner lens 45 is a convex lens whose center is formed thicker than the edge in the direction from the light receiving surface JS toward the color filter 51, and collects incident light H at the center of the light receiving surface JS. It is configured to shine.

(8) Color Filter 51 As shown in FIG. 3, the color filter 51 is provided above the surface of the substrate 101 so as to face the light receiving surface JS via the intralayer lens 45. The color filter 51 is provided on the upper surface of the planarization film HT1 that planarizes the surface of the inner lens 45. Here, the color filter 51 is configured to color the incident light H and transmit it to the light receiving surface JS.

  FIG. 4 is a diagram showing the color filter 51 in the first embodiment according to the present invention. Here, FIG. 4 shows the top surface.

  As shown in FIG. 4, the color filter 51 includes a blue filter layer 51B in addition to the green filter layer 51G and the red filter layer 51R shown in FIG. A plurality of green filter layers 51G, red filter layers 51R, and blue filter layers 51B are arranged so as to correspond to the plurality of pixels P arranged in the imaging area PA. In the present embodiment, as shown in FIG. 4, the layers 51R, 51G, and 51B are arranged, for example, in a Bayer array.

  Each of the layers 51R, 51G, and 51B uses, for example, a coating liquid containing a dye corresponding to each color, a dispersion resin, a photopolymerization initiator, a polyfunctional photopolymerizable compound, a solvent, and other additives. After coating and drying, the pattern is formed by lithography.

(9) Microlens 61 As shown in FIG. 3, the microlens 61 is provided above the light receiving surfaces JS of the plurality of photodiodes 21 and on the color filter 51.

  5 and 6 are diagrams showing the microlens 61 in the first embodiment according to the present invention. Here, FIG. 5 shows a cross section, and FIG. 6 shows a top surface. Specifically, FIG. 5A shows a cross section (Y1-Y2 portion) in the vertical direction y shown in FIG. FIG. 5B shows a cross section (K1-K2 portion) in the diagonal direction k shown in FIG. Moreover, FIG. 3 mentioned above has shown the cross section (X1-X2 part) in the horizontal direction x shown in FIG.

  As shown in FIGS. 3 and 5, the microlens 61 is a convex lens whose center is formed thicker than the edge in the depth direction z from the light receiving surface JS toward the color filter 51. It is configured to condense H to the center of the light receiving surface JS.

  Also, as shown in FIG. 6, a plurality of microlenses 61 are arranged in each of the horizontal direction x and the vertical direction y. Each of the plurality of microlenses 61 is disposed so as to correspond to the plurality of pixels P arranged in the imaging area PA (see FIG. 2). That is, like the plurality of photodiodes 21, a plurality of microlenses 61 are arranged in each of the horizontal direction x and the vertical direction y, and constitute a lens array.

  As shown in FIG. 6, the microlens 61 has a shape in which the planar shape on the imaging surface includes a portion partitioned by a side extending in the horizontal direction x and a side extending in the vertical direction y. Is formed. That is, each microlens 61 is formed so that the planar shape is a square shape.

  As shown in FIGS. 3 and 6, a plurality of microlenses 61 are arranged in contact with each other in the horizontal direction x and the vertical direction y.

  Here, in the plurality of microlenses 61, the microlenses 61 arranged adjacent to each other in the horizontal direction x are formed so as to be in contact with each other at sides extending in the vertical direction y.

  In the plurality of microlenses 61, the microlenses 61 arranged adjacent to each other in the vertical direction y are in contact with each other at the sides extending in the horizontal direction x, as shown in FIGS. Is formed.

  The microlenses 61 arranged in each of the horizontal direction x and the vertical direction y are formed so that the lens surfaces thereof are the same as shown in FIGS. 3 and 5A. Specifically, each micro lens 61 is formed such that the curvature of the lens surface is the same in each cross section in the horizontal direction x and the vertical direction y. Further, the depths Dx and Dy of the grooves formed between the microlenses 61 are formed to be the same in the respective cross sections in the horizontal direction x and the vertical direction y.

  On the other hand, in the plurality of microlenses 61, the microlenses 61 arranged adjacent to each other in the diagonal direction k are perpendicular to the side extending in the horizontal direction x as shown in FIGS. 3 and 5B. They are formed so as to be in contact with each other at a portion where the side extending to y intersects.

  The lens surfaces of the microlenses 61 arranged in the diagonal direction k have different curvatures from the lens surfaces of the microlenses 61 in the horizontal direction x and the vertical direction y, as shown in FIG. 5B. Here, the lens surfaces of the micro lenses 61 arranged in the diagonal direction k are formed to have a higher curvature than the lens surfaces of the micro lenses 61 in the horizontal direction x and the vertical direction y.

  Further, the depth Dk of the groove formed between the microlenses 61 arranged in the diagonal direction k is the depth Dx of the groove formed between the microlenses 61 arranged in the horizontal direction x and the vertical direction y. It is formed to be deeper than Dy. The depths Dx, Dy, and Dk of the grooves formed between the plurality of microlenses 61 are defined by the distance between the lens center and the lens end in the depth direction z.

In the above, the depths Dx and Dy of the grooves formed between the microlenses 61 arranged in the horizontal direction x are preferably 150 nm or less.
If it is out of this range, the light is focused on the photodiode 21 at a high angle, which may cause a problem of smear deterioration.

Further, in the above, the relationship between the depth Dk of the groove formed between the microlenses 61 arranged in the diagonal direction k and the depth Dx of the groove formed between the microlenses 61 arranged in the horizontal direction x. Preferably satisfies the following formula (1).
When Dk is 3 times or less than Dx, sufficient sensitivity cannot be obtained due to insufficient curvature, and when it is 5 times or more, the curvature is too high and smear may deteriorate.
Dx: Dk = 1: 3-5 (1)

  Thus, in the present embodiment, the microlens 61 is formed to constitute an aspheric lens.

(B) Manufacturing Method A manufacturing method for manufacturing the solid-state imaging device 1 will be described.

  7 and 8 are diagrams showing the main part provided in each step of the manufacturing method of the solid-state imaging device 1 in the first embodiment according to the present invention. 7 and 8 show the steps of the method for manufacturing the solid-state imaging device 1 in the order of (a), (b), (c), and (d). 7 and 8, the left side portion shows the cross section (X1-X2 portion) in the horizontal direction x shown in FIG. 6, as in FIG. Together with this, in FIGS. 7 and 8, the right side portion shows the cross section (K1-K2 portion) in the diagonal direction k shown in FIG. 6, as in FIG. 5B. The cross section (Y1-Y2 portion) in the vertical direction y shown in FIG. 6 is the same as the left side portion of FIGS.

(1) Formation of Color Filter 51 First, the color filter 51 is formed as shown in FIG.

  Here, prior to the formation of the color filter 51, the photodiode 21, the charge readout channel region 22R, the charge transfer channel region 23T, and the channel stopper region 24C are provided on the substrate 101 as shown in FIG. . Then, after forming each part of the transfer electrode 31, the metal light shielding film 41, and the inner lens 45 on the surface of the substrate 101, the planarizing film HT1 is formed.

  Then, the color filter 51 is formed on the upper surface of the planarizing film HT1.

  Specifically, as shown in FIG. 4, the green filter layer 51G, the red filter layer 51R, and the blue filter layer 51B are provided so as to be arranged in a Bayer array.

  For example, a coating liquid containing a dye corresponding to each color, a dispersion resin, a photopolymerization initiator, a polyfunctional photopolymerizable compound, a solvent, and other additives is applied onto the planarizing film HT1. ,dry. Then, the layers 51R, 51G, and 51B are sequentially formed by patterning the coating film using a lithography technique.

(2) Formation of Lens Base Material Film 111z Next, as shown in FIG. 7B, the lens base material film 111z is formed.

  Here, a polystyrene resin is provided on the upper surface of the color filter 51 as the lens base material film 111z. For example, the lens base material film 111z is formed by spin coating so that the film thickness becomes 400 μm.

  The lens base material film 111z can be formed using various materials in addition to the polystyrene resin. For example, the lens base material film 111z may be formed using a material such as an acrylic resin, a polyimide resin, an epoxy resin, or a copolymer resin thereof.

(3) Formation of resist pattern RP Next, as shown in FIG. 8C, a resist pattern RP is formed.

  Here, a photoresist film (not shown) is provided by applying a coating liquid containing an i-line positive photosensitive resin such as a novolac resin on the upper surface of the lens base material film 111z and then drying. Thereafter, a resist pattern RP is formed on the upper surface of the lens base material film 111z by patterning the photoresist film using a photolithography technique. That is, after performing an exposure process for transferring a mask pattern image of a photomask (not shown) to a photoresist film, a development process is performed on the photoresist film on which the exposure process has been performed, thereby forming a resist pattern RP. . Thus, a resist pattern RP protruding in a convex shape is formed on the upper surface of the lens base material film 111z.

  Specifically, as shown in FIG. 8C, the central portion of the region for forming the microlens 61 shown in FIGS. 3 and 5 is thicker than the periphery of the central portion. A resist pattern RP is formed.

  In the present embodiment, as shown on the left side and the right side of FIG. 8C, the film thickness around the central portion of the region where the microlens 61 (see FIGS. 3 and 5) is formed is the horizontal direction x. The resist patterns RP are formed so as to be different from each other in the diagonal direction k. Here, the film is formed such that the film thickness Mx in the horizontal direction x is larger than the film thickness Mk in the diagonal direction k.

  For example, around the central portion of the region where the microlens 61 (see FIGS. 3 and 5) is formed, the film thickness Mk in the diagonal direction k (the right side portion in FIG. 8C) is set to 0, and the horizontal direction The film thickness Mx at x is made larger than this film thickness Mk. Although not shown in FIG. 8C, the resist pattern RP is formed so that the film thickness My in the vertical direction y is the same as the film thickness Mx in the horizontal direction x (that is, Mx = My).

  FIG. 9 is a diagram showing a photomask used in the formation process of the resist pattern RP in the first embodiment according to the present invention. In FIG. 9, the upper surface is shown.

  As shown in FIG. 9, a photomask PM in which a light shielding portion SK that shields exposure light in the exposure processing is provided as a mask pattern in a portion where a photoresist film is left to form a resist pattern RP.

  On the other hand, as shown in FIG. 9, the boundary line portion between the microlenses 61 (see FIG. 6) arranged in the horizontal direction x and the vertical direction y is half in order to leave a part of the photoresist film. A tone mask semi-transmission portion FT is provided. Further, as shown in FIG. 9, a transmissive portion TT is provided in order to remove the entire photoresist film at a portion between the microlenses 61 (see FIG. 6) formed to be aligned in the diagonal direction k. It has been.

  Then, after performing an exposure process on the photoresist film using the above-described photomask PM, a development process is performed so that the film thicknesses Mx and My in the horizontal direction x and the vertical direction y are the film thicknesses in the diagonal direction k. A resist pattern RP is formed so as to be thicker than Mk.

For example, the resist pattern RP is formed under the following conditions.
<Formation conditions of resist pattern RP>
Photoresist material: i-line positive resist Photoresist film thickness: 400 nm
-Pre-baking conditions: 80 ° C for 90 seconds (on hot plate)
・ Exposure conditions: 1/4 reduction exposure equipment (NA 0.5, σ 0.7)
・ Bake condition after exposure: None ・ Development condition: Developer TMAH 2.38%, Development time 60 seconds x 2 paddle development

  In the above description, the case where the exposure process is performed using a halftone mask has been described. However, the present invention is not limited to this. For example, underexposure (0.3 μm or more) may be performed using a photomask in which a line width pattern of an i-line resolution level is formed. Further, the above-described exposure process may be performed using a photomask on which a line width pattern having an i-line resolution or less is formed.

(4) Processing the resist pattern RP into a lens shape Next, as shown in FIG. 8D, the resist pattern RP is processed into a lens shape.

  Here, the resist pattern RP formed above is processed into a lens shape by performing a thermal reflow process.

  In the thermal reflow processing step of the present embodiment, the resist patterns arranged adjacent to each other in the diagonal direction k on the imaging surface are kept spaced apart, and the resist patterns arranged in the horizontal direction x are fused to each other. This thermal reflow process is performed.

  Specifically, as the thermal reflow process, for example, a post-bake process is performed twice. For example, the thermal reflow process is performed so that the temperature condition of the second post-baking process performed for the second time is higher than the temperature condition of the first post-baking process performed for the first time.

For example, this step is performed under the following reflow processing conditions.
・ First post-bake treatment conditions: 140-150 ° C., 120 seconds (on hot plate)
・ Second post-bake treatment conditions: 170-180 ° C., 120 seconds (on hot plate)

  As a result, as shown in FIG. 8D, the surface becomes a curved surface, and the resist pattern RP is processed into a lens shape.

  In the present embodiment, as shown on the left side in FIG. 8D, the boundary line portion between the micro lenses 61 (see FIGS. 3 and 5) arranged in the horizontal direction x is formed by a lens-shaped resist pattern RP. It is formed so as to be fused to each other. Although not shown, the lens-shaped resist patterns RP are formed so as to be fused to each other also at the boundary line portion between the microlenses 61 arranged in the vertical direction y. That is, in this portion, the lens-shaped resist pattern RP is formed so as to cover the lens base material film 111z.

  On the other hand, as shown in the right side portion in FIG. 8D, the portion between the micro lenses 61 (see FIGS. 3 and 5) aligned in the diagonal direction k has a lens-shaped resist pattern RP. It is formed to be spaced apart. That is, in this portion, the lens-shaped resist pattern RP is formed so that the surface of the lens base material film 111z is exposed.

  For this reason, as shown in FIG. 8, the lens-shaped resist pattern RP is such that the film thickness of the portion between the plurality of microlenses 61 is thicker in the diagonal direction k than in the horizontal direction x and the vertical direction y. It is formed. Furthermore, since the lens-shaped resist pattern RP is fused in the horizontal direction x and the vertical direction y, the lens-shaped resist pattern RP has a lower curvature in the diagonal direction k than in the horizontal direction x and the vertical direction y. Formed to be. That is, the resist pattern RP is formed in a lens shape so as to correspond to the curvature of the lens surface of the microlens 61 to be formed.

(5) Formation of Micro Lens 61 Next, as shown in FIGS. 3, 5, and 6, the micro lens 61 is formed.

  Here, the entire surface of the lens base material film 111z is etched back using the lens-shaped resist pattern RP as a mask. That is, the lens base material film 111z is processed into the microlens 61 so that the lens-shaped pattern of the resist pattern RP is transferred to the lens base material film 111z.

  Thereby, the resist pattern RP and the lens base material film 111z are removed, and the lens base material film 111z is patterned into the microlens 61 as shown in FIGS.

  In the present embodiment, as shown in FIGS. 3 and 6, each microlens 61 is formed such that microlenses 61 arranged adjacent to each other in the horizontal direction x are in contact with each other at sides extending in the vertical direction y. To do. Further, as shown in FIGS. 5A and 6, each microlens 61 is formed such that microlenses 61 arranged adjacent to each other in the vertical direction y are in contact with each other at sides extending in the horizontal direction x. To do. Furthermore, the lens surface of the microlens 61 has the same curvature in each cross section in the horizontal direction x and the vertical direction y, and the depths Dx and Dy of the grooves formed between the microlenses 61 are the same. Thus, each microlens 61 is formed.

  At the same time, as shown in FIGS. 3 and 5B, the microlens 61 arranged adjacent to each other in the diagonal direction k intersects the side extending in the horizontal direction x and the side extending in the vertical direction y. The microlenses 61 are formed so as to be in contact with each other at the portions to be processed. Then, each microlens 61 is formed such that the lens surfaces of the microlenses 61 arranged in the diagonal direction k have a higher curvature than the lens surfaces of the microlenses 61 in the horizontal direction x and the vertical direction y. Further, the depth Dk of the groove formed between the microlenses 61 arranged in the diagonal direction k is the depth Dx of the groove formed between the microlenses 61 arranged in the horizontal direction x and the vertical direction y. Each microlens 61 is formed so as to be deeper than Dy.

For example, the above-described etch-back process is performed under the following conditions to form each microlens 61.
<Etching conditions>
・ Etch back device: Magnetron RIE device ・ Etching gas: CF4 = 155 ccm
・ High frequency power: 1.8W / cm2
Etching chamber pressure: 6.65 Pa
-Lower electrode temperature (chiller temperature): 0 ° C
・ Etching amount: 2.4 μm (in terms of styrene resist)

  Thus, the depth Dx of the groove formed between the microlenses 61 arranged in the horizontal direction x is formed to be 150 nm or less. Further, the relationship between the depth Dk of the groove formed between the microlenses 61 arranged in the diagonal direction k and the depth Dx of the groove formed between the microlenses 61 arranged in the horizontal direction x is described above. It is formed so as to satisfy the formula (1). That is, the microlens 61 is formed as an aspheric lens.

As an etch back device, various etch back devices can be used in addition to the magnetron RIE device. For example, the following etch back apparatus can be used.
・ Parallel plate type RIE equipment ・ High pressure narrow gap type plasma etching equipment ・ ECR type etching equipment ・ Microwave plasma type etching equipment ・ Transformer coupled plasma type etching equipment ・ Inductively coupled plasma type etching equipment ・ helicon wave plasma type etching equipment

(C) Summary As described above, in the present embodiment, the microlens 61 has a portion in which the planar shape of the imaging surface is defined by a side extending in the horizontal direction x and a side extending in the vertical direction y. It is a shape to include. A plurality of microlenses 61 are arranged in contact with each other in the horizontal direction x and the vertical direction y. In addition, the plurality of microlenses 61 have a groove depth between the microlenses 61 arranged in the diagonal direction k inclined with respect to the horizontal direction x and the vertical direction y on the imaging surface. It is formed to be deeper than the depth of the groove between the lenses 61. In addition, the plurality of microlenses 61 are formed so that the curvature of the lens surface in the diagonal direction k is higher than the curvature of the lens surface in the horizontal direction x.

  Further, in the plurality of microlenses 61, the groove depth D1 between the microlenses 61 arranged in the horizontal direction x and the groove depth D3 between the microlenses arranged in the diagonal direction k are D1: D3 = It is formed to have a relationship of 1: 3-5.

  In addition, the plurality of microlenses 61 are formed so that the groove depth D1 between the microlenses 61 arranged in the horizontal direction x has a relationship of D1 ≦ 150 nm.

  As described above, when the curvature of the microlens 61 is high (when the lens layer thickness is thick), the sensitivity is generally improved. In the CCD type solid-state imaging device, since the sensor shape is a square shape such as a square / rectangular shape, smear is likely to occur in the horizontal direction x and is most unlikely to occur in the diagonal direction k. .

  In the present embodiment, since the curvature in the diagonal direction k is higher than the curvature in the horizontal direction x, the microlens 61 effectively collects incident light on the light receiving surface from the diagonal direction k where smear is unlikely to occur. I can do this. That is, in the horizontal direction x, since the curvature of the microlens 61 is low (lens thickness is thin), it is possible to prevent light from entering the vertical transfer unit, which causes smear. Along with this, in the diagonal direction k, the curvature of the microlens 61 is high (the lens thickness is thick), so that the sensitivity can be improved. For this reason, this embodiment can implement | achieve both improvement in a sensitivity and prevention of generation | occurrence | production of a smear effectively.

  Specifically, it has been confirmed that the solid-state imaging device of the present embodiment has an improvement in sensitivity of 4% and a smear of 0.4 dB over the conventional structure.

  Therefore, in this embodiment, the microlens 61 can be formed with high definition to improve the light collection efficiency, and the image quality of the captured image can be easily improved.

<2. Second Embodiment>
(A) Device Configuration, etc. FIG. 10 is a diagram illustrating a main part of a solid-state imaging device in Embodiment 2 according to the present invention.

  Here, FIG. 10 shows a portion where the microlens 61 is formed, and shows a cross section (Y1-Y2 portion) in the vertical direction y, as in FIG.

  As shown in FIG. 10, the microlens 61 is different from the first embodiment in the present embodiment. Except for this point and points related thereto, the present embodiment is the same as the first embodiment. For this reason, description is abbreviate | omitted about the overlapping part.

  In the first embodiment, each microlens 61 is formed such that the curvature of the lens surface is the same in each cross section in the horizontal direction x and the vertical direction y. Further, the depths Dx and Dy of the grooves formed between the microlenses 61 are the same in the cross sections in the horizontal direction x and the vertical direction y, respectively.

  However, in the present embodiment, as shown in FIG. 10, each microlens 61 is formed so that the curvatures of the lens surfaces are different from each other in each cross section in the horizontal direction x and the vertical direction y. Further, the depths Dx and Dy of the grooves formed between the microlenses 61 are different from each other in the cross sections in the horizontal direction x and the vertical direction y.

  Specifically, each microlens 61 is formed such that the curvature of the lens surface in the cross section in the vertical direction y is higher than the curvature of the lens surface in the cross section in the horizontal direction x. Each microlens 61 is formed such that the groove depth Dy between the microlenses 61 in the cross section in the vertical direction y is deeper than the groove depth Dx between the microlenses 61 in the cross section in the horizontal direction x. ing.

  Each microlens 61 is formed in the same manner as in the first embodiment with respect to the cross section in the diagonal direction k.

(B) Manufacturing Method A manufacturing method for manufacturing the solid-state imaging device of the present embodiment will be described.

  FIG. 11 is a diagram illustrating a main part provided in each step of the manufacturing method of the solid-state imaging device in the second embodiment according to the present invention. In FIG. 11, the steps of the method for manufacturing the solid-state imaging device are shown in the order of (a) and (b). In FIG. 11, the left side portion shows a cross section (X1-X2 portion) in the horizontal direction x shown in FIG. In FIG. 11, the right side portion shows the cross section (the K1-K2 portion) in the diagonal direction k shown in FIG. 6, as in FIG. 5B. In FIG. 11, the central portion shows the cross section (Y1-Y2 portion) in the vertical direction y shown in FIG. 6, similarly to FIG.

(1) Formation of resist pattern RP First, as shown in FIG. 11A, a resist pattern RP is formed.

  Here, prior to the formation of the resist pattern RP, the color filter 51 and the lens base material film 111z are sequentially formed in the same manner as in the first embodiment.

  Then, similarly to the first embodiment, after providing a photoresist film (not shown) on the upper surface of the lens base material film 111z, the photoresist film is subjected to pattern processing to form a resist pattern RP.

  In the present embodiment, as shown on the left side and the right side of FIG. 11A, the resist pattern RP is formed for each cross section in the horizontal direction x and the diagonal direction k, as in the first embodiment.

  However, as shown in the central part of FIG. 11A, the resist pattern RP is formed in the cross section in the vertical direction y, unlike the first embodiment.

  Specifically, as shown in FIG. 11A, the film thickness around the central portion of the region where the micro lens 61 (see FIGS. 3 and 5) is formed is between the horizontal direction x and the vertical direction y. The resist patterns RP are formed so as to be different from each other. Here, the film is formed such that the film thickness My in the vertical direction y is smaller than the film thickness Mx in the horizontal direction x.

  For example, similarly to the cross section in the diagonal direction k, the resist pattern RP is formed so that the surface of the lens base material film 111z is exposed at the boundary portion of the portion where the microlens 61 (see FIGS. 3 and 5) is formed. To do.

  FIG. 12 is a view showing a photomask used in the formation process of the resist pattern RP in the second embodiment according to the present invention. In FIG. 12, the upper surface is shown.

  As shown in FIG. 12, similarly to the first embodiment, a light shielding portion SK for shielding exposure light is provided as a mask pattern in a portion where the photoresist pattern is left and the resist pattern RP is formed. Along with this, a translucent portion FT of a halftone mask is provided in order to leave a part of the photoresist film at a boundary portion between the micro lenses 61 (see FIG. 6) arranged in the horizontal direction x. Yes.

  However, in the present embodiment, unlike the first embodiment, a portion between the microlenses 61 (see FIG. 6) arranged in the vertical direction y and the diagonal direction k is transmitted in order to remove the entire photoresist film. A photomask PM provided with a portion TT is used.

  Then, after performing an exposure process on the photoresist film using the photomask PM described above, a development process is performed to form the resist pattern RP described above.

  In the above description, the case where the exposure process is performed using a halftone mask has been described. However, the present invention is not limited to this. Similarly to the first embodiment, for example, underexposure (0.3 μm or more) may be performed using a photomask in which a line width pattern of an i-line resolution level is formed. Further, the above-described exposure process may be performed using a photomask on which a line width pattern having an i-line resolution or less is formed.

(2) Processing the resist pattern RP into a lens shape Next, as shown in FIG. 11B, the resist pattern RP is processed into a lens shape.

  Here, as in the case of the first embodiment, the resist pattern RP formed above is processed into a lens shape by performing a thermal reflow process.

  In the present embodiment, as shown in the left part of FIG. 11B, the boundary line portion between the micro lenses 61 (see FIGS. 3 and 5) arranged in the horizontal direction x is the same as in the case of the first embodiment. In addition, the lens-shaped resist patterns RP are formed so as to be fused to each other. That is, in this portion, the lens-shaped resist pattern RP is formed so as to cover the lens base material film 111z.

  Further, as shown in the right part of FIG. 11B, the portion between the microlenses 61 (see FIGS. 3 and 5) arranged in the diagonal direction k has a lens shape as in the first embodiment. Resist patterns RP are formed to be spaced apart. That is, in this portion, the lens-shaped resist pattern RP is formed so that the surface of the lens base material film 111z is exposed.

  On the other hand, as shown in the center portion in FIG. 11B, the boundary line portion between the microlenses 61 arranged in the vertical direction y (see FIG. 10) is different from the first embodiment in the lens shape. The resist patterns RP are formed so as to be spaced apart from each other. That is, the lens-shaped resist pattern RP is formed in this portion so that the surface of the lens base material film 111z is exposed.

  For this reason, as shown in FIG. 11, the lens-shaped resist pattern RP is such that the film thickness of the portion between the plurality of microlenses 61 is thicker in the vertical direction y and the diagonal direction k than in the horizontal direction x. It is formed. Further, since the lens-shaped resist pattern RP is fused in the horizontal direction x, the curvature of each of the lens-shaped resist patterns RP is lower in the vertical direction y and the diagonal direction k than in the horizontal direction x. It is formed. That is, the resist pattern RP is formed in a lens shape so as to correspond to the curvature of the lens surface of the microlens 61 to be formed.

(3) Formation of Micro Lens 61 Next, as shown in FIGS. 3, 5B, and 10, the micro lens 61 is formed.

  Here, as in the case of the first embodiment, the entire surface of the lens base material film 111z is etched back using the lens-shaped resist pattern RP as a mask. That is, the lens base material film 111z is processed into the microlens 61 so that the lens-shaped pattern of the resist pattern RP is transferred to the lens base material film 111z.

  In the present embodiment, unlike the first embodiment, each microlens 61 is formed such that the curvature of the lens surface in the cross section in the vertical direction y is higher than the curvature of the lens surface in the cross section in the horizontal direction x. Each microlens 61 is formed such that the groove depth Dy between the microlenses 61 in the cross section in the vertical direction y is deeper than the groove depth Dx between the microlenses 61 in the cross section in the horizontal direction x. The

(C) Summary As described above, in the present embodiment, as in the first embodiment, the plurality of microlenses 61 has a groove depth between the microlenses 61 arranged in the diagonal direction k on the imaging surface. It is formed so as to be deeper than the depth of the groove between the microlenses 61 arranged in the horizontal direction x. In addition, the plurality of microlenses 61 are formed so that the curvature of the lens surface in the diagonal direction k is higher than the curvature of the lens surface in the horizontal direction x.

  In the present embodiment, as in the first embodiment, the microlens 61 has a low curvature (the lens thickness is thin) in the horizontal direction x, and therefore the light to the vertical transfer unit that causes smearing. Can be prevented.

  At the same time, in the present embodiment, in the plurality of microlenses 61, the depth of the grooves between the microlenses 61 arranged in the vertical direction y is deeper than the depth of the grooves between the microlenses 61 arranged in the horizontal direction x. It is formed as follows. Further, the curvature of the lens surface in the vertical direction y is formed to be higher than the curvature of the lens surface in the horizontal direction x. As described above, in the present embodiment, in the vertical direction y, similarly to the diagonal direction k, the curvature of the microlens 61 is higher than that in the horizontal direction x (the lens thickness is thick), so that the sensitivity can be further improved. it can. For this reason, this embodiment can implement | achieve both improvement in a sensitivity and prevention of generation | occurrence | production of a smear effectively.

  Therefore, in this embodiment, the microlens 61 can be formed with high definition to improve the light collection efficiency, and the image quality of the captured image can be easily improved.

<3. Embodiment 3>
(A) Device Configuration, etc. FIG. 13 is a diagram showing the main part of a solid-state imaging device in Embodiment 3 according to the present invention.

  Here, FIG. 13 shows a portion where the microlens 61 is formed. In FIG. 13, (A) shows a cross section (X1-X2 portion) in the horizontal direction x. And (B) has shown the cross section (Y1-Y2 part) in the perpendicular direction y.

  As shown in FIG. 13, in the present embodiment, the microlens 61 is different from the first embodiment. Except for this point and points related thereto, the present embodiment is the same as the first embodiment. For this reason, description is abbreviate | omitted about the overlapping part.

  As shown in FIG. 13A, the microlens 61 is provided so that the upper surface portion is along the horizontal direction x in the cross section in the horizontal direction x.

  On the other hand, in the cross section in the vertical direction y, the microlens 61 is configured as a convex lens in which the upper surface portion is a curved surface and the center is thicker than the edge.

  That is, in the present embodiment, the microlens 61 is formed so that the cross section in the vertical direction y has a lens shape and has a “kamaboko shape” that extends linearly in the horizontal direction x.

(B) Manufacturing Method A manufacturing method for manufacturing the solid-state imaging device of the present embodiment will be described.

  FIG. 14 is a diagram illustrating a main part provided in each step of the manufacturing method of the solid-state imaging device in the third embodiment according to the present invention. In FIG. 14, each step of the method for manufacturing the solid-state imaging device is shown in the order of (a) and (b). In FIG. 14, the left side portion shows a cross section (X1-X2 portion) in the horizontal direction x, as in FIG. In FIG. 14, the right side portion shows the cross section (Y1-Y2 portion) in the vertical direction y, as in FIG. 13B.

(1) Formation of resist pattern RP First, as shown in FIG. 14A, a resist pattern RP is formed.

  Here, prior to the formation of the resist pattern RP, the color filter 51 and the lens base material film 111z are sequentially formed in the same manner as in the first embodiment.

  Then, similarly to the first embodiment, after providing a photoresist film (not shown) on the upper surface of the lens base material film 111z, the photoresist film is subjected to pattern processing to form a resist pattern RP. Specifically, a resist pattern RP is formed by performing a development process after performing an exposure process for exposing a pattern image to the photoresist film.

  In the present embodiment, as shown in the left part of FIG. 14A, the resist pattern is maintained so that the horizontal cross section in the horizontal direction x is kept flat without extending the horizontal direction x. RP is formed.

  On the other hand, as shown in the right portion of FIG. 14A, the resist pattern RP is formed so that the portion in the vertical direction y is opened while the microlens 61 is formed. That is, for this portion, the resist pattern RP is formed so that the surface of the lens base material film 111z is exposed.

(2) Processing the resist pattern RP into a lens shape Next, as shown in FIG. 14B, the resist pattern RP is processed into a lens shape.

  Here, as in the case of the first embodiment, the resist pattern RP formed above is processed into a lens shape by performing a thermal reflow process.

  In the present embodiment, as shown in the left part of FIG. 14B, the horizontal section x is not provided with an opening, so that the flat section extends in the horizontal direction x. .

  On the other hand, as shown in the right side portion of FIG. 14B, the cross section in the vertical direction y is open in the portion between the microlenses 61, so that the resist pattern RP is melted and the lens Processed into shape.

(3) Formation of Micro Lens 61 Next, as shown in FIG. 13, the micro lens 61 is formed.

  Here, as in the case of the first embodiment, the entire surface of the lens base material film 111z is etched back using the lens-shaped resist pattern RP as a mask. That is, the lens base material film 111z is processed into the microlens 61 so that the lens-shaped pattern of the resist pattern RP is transferred to the lens base material film 111z.

  In the present embodiment, unlike the first embodiment, each microlens 61 has a lens shape in cross section in the vertical direction y and is formed in a “kamaboko shape” extending linearly in the horizontal direction x.

(C) Summary As described above, in the present embodiment, the microlens 61 is formed such that the lens surface on which the incident light H is incident is a curved surface in the vertical direction y and flat in the horizontal direction x. Yes. That is, as described above, it is formed in a “kamaboko shape”.

  In this embodiment, since the upper surface of the microlens 61 is flat in the horizontal direction x, the curvature of the lens surface is low as in the first embodiment, so that the vertical transfer that causes smearing occurs. The incidence of light on the part can be prevented. Along with this, in the vertical direction y, the curvature of the lens surface of the microlens 61 is high and the light collection efficiency is high, so that the sensitivity can be improved. For this reason, this embodiment can implement | achieve both improvement in a sensitivity and prevention of generation | occurrence | production of a smear effectively.

  Therefore, the present embodiment can easily improve the image quality of the captured image.

<4. Embodiment 4>
(A) Device Configuration, etc. (A-1) Main Part Configuration of Solid-State Imaging Device FIG. 15 is a diagram showing the main part of a solid-state imaging device in Embodiment 4 according to the present invention.

  The solid-state imaging device of the present embodiment is a CMOS type image sensor and is different from the first embodiment. Except for this point and points related thereto, the present embodiment is the same as the first embodiment. For this reason, description is abbreviate | omitted about the overlapping part.

  As shown in FIG. 15, the solid-state imaging device of this embodiment includes a substrate 101. The substrate 101 is a semiconductor substrate made of, for example, silicon, and an imaging area PA and a peripheral area SA are provided on the surface of the substrate 101.

  As shown in FIG. 15, the imaging area PA has a rectangular shape, and a plurality of pixels P are arranged in each of the horizontal direction x and the vertical direction y. That is, the pixels P are arranged in a matrix. In the imaging area PA, the center is arranged so as to correspond to the optical axis of the optical system 42 shown in FIG. The imaging area PA corresponds to the imaging surface PS shown in FIG.

  In the imaging area PA, the pixel P receives incident light and generates a signal charge. Then, the generated signal charge is read out and output by the pixel transistor. A detailed configuration of the pixel P will be described later.

  As shown in FIG. 15, the peripheral area SA is located around the imaging area PA. In the peripheral area SA, peripheral circuits are provided.

  Specifically, as shown in FIG. 15, a vertical drive circuit 13, a column circuit 14, a horizontal drive circuit 15, an external output circuit 17, a timing generator (TG) 18, and a shutter drive circuit 19 are It is provided as a peripheral circuit.

  As shown in FIG. 15, the vertical drive circuit 13 is provided on the side of the imaging area PA in the peripheral area SA, and is configured to select and drive the pixels P of the imaging area PA in units of rows. Yes.

  As shown in FIG. 15, the column circuit 14 is provided at the lower end of the imaging area PA in the peripheral area SA, and performs signal processing on signals output from the pixels P in units of columns. Here, the column circuit 14 includes a CDS (Correlated Double Sampling) circuit (not shown), and performs signal processing to remove fixed pattern noise.

  As shown in FIG. 15, the horizontal drive circuit 15 is electrically connected to the column circuit 14. The horizontal drive circuit 15 includes, for example, a shift register, and sequentially outputs a signal held in the column circuit 14 for each column of pixels P to the external output circuit 17.

  As shown in FIG. 15, the external output circuit 17 is electrically connected to the column circuit 14, performs signal processing on the signal output from the column circuit 14, and then outputs the signal to the outside. The external output circuit 17 includes an AGC (Automatic Gain Control) circuit 17a and an ADC circuit 17b. In the external output circuit 17, after the AGC circuit 17a applies a gain to the signal, the ADC circuit 17b converts the analog signal into a digital signal and outputs it to the outside.

  As shown in FIG. 15, the timing generator 18 is electrically connected to each of the vertical drive circuit 13, the column circuit 14, the horizontal drive circuit 15, the external output circuit 17, and the shutter drive circuit 19. The timing generator 18 generates various timing signals and outputs them to the vertical drive circuit 13, the column circuit 14, the horizontal drive circuit 15, the external output circuit 17, and the shutter drive circuit 19, thereby performing drive control for each part.

  The shutter drive circuit 19 is configured to select the pixels P in units of rows and adjust the exposure time in the pixels P.

(A-2) Detailed Configuration of Solid-State Imaging Device Detailed contents of the solid-state imaging device according to the present embodiment will be described.

  FIGS. 16 and 17 are diagrams showing the main part of the solid-state imaging device according to the fourth embodiment of the present invention.

  Here, FIG. 16 shows an upper surface of the imaging area PA. FIG. 17 shows a circuit configuration of the pixel P provided in the imaging area PA.

  As illustrated in FIGS. 16 and 17, the solid-state imaging device 1 includes a photodiode 21 and a pixel transistor PTr. Here, as shown in FIG. 17, the pixel transistor PTr includes a transfer transistor 22, an amplification transistor 23, a selection transistor 24, and a reset transistor 25, and is configured to read a signal charge from the photodiode 21. Yes.

  Each part which comprises a solid-state imaging device is demonstrated sequentially.

(1) Photodiode 21 In the solid-state imaging device 1, a plurality of photodiodes 21 are arranged so as to correspond to each of the plurality of pixels P as shown in FIG. The plurality of photodiodes 21 are provided side by side in the horizontal direction x and the vertical direction y orthogonal to the horizontal direction x on the imaging surface (xy plane).

  Each photodiode 21 is configured to generate and accumulate signal charges by receiving incident light (subject image) and performing photoelectric conversion. For example, the photodiode 21 is configured by forming an n-type charge storage region in a p-type semiconductor region provided in a substrate 101 that is an n-type silicon semiconductor. Each photodiode 21 is configured such that the accumulated signal charge is transferred to the read drain FD by the transfer transistor 22, as shown in FIG.

  In the present embodiment, as shown in FIGS. 16 and 17, each of the photodiodes 21 is provided with a pair of transfer transistors 22. For example, a pair of four transfer transistors 22 (22A_1, 22A_2, 22B_1, 22B_2) is provided corresponding to the four photodiodes 21 (21A_1, 21A_2, 21B_1, 21B_2).

  As shown in FIGS. 16 and 17, the plurality of photodiodes 21 are configured to share one readout drain FD. In the present embodiment, as shown in FIG. 16, two photodiodes 21 (21A_1 and 21A_2, or 21B_1, 21B_2) arranged in the diagonal direction k share one read drain FD (FDA or FDB). It is provided to do.

  As shown in FIGS. 16 and 17, the set of the plurality of photodiodes 21 is configured to share the amplification transistor 23, the selection transistor 24, and the reset transistor 25 in the plurality of sets. For example, as shown in FIG. 17, for each set of four photodiodes 21 (21A_1, 21A_2, 21B_1, 21B_2), one amplification transistor 23, one selection transistor 24, and one reset transistor 25 are provided. It has been.

(2) Pixel Transistor PTr In the solid-state imaging device 1, the pixel transistor PTr is provided between the plurality of pixels P on the imaging surface (xy surface) as shown in FIG. Each of the pixel transistors PTr has an activation region (not shown) formed in a region separating the pixels P in the substrate 101, and each gate electrode is formed using, for example, polysilicon.

  In the pixel transistor PTr, a plurality of transfer transistors 22 are formed so as to correspond to each of the plurality of pixels P as shown in FIGS.

  Here, as shown in FIG. 16, in the transfer transistor 22, the transfer gate is provided on the surface of the substrate 101 via a gate insulating film. In the transfer transistor 22, the transfer gate is provided adjacent to the read drain FD (floating diffusion) provided on the surface of the substrate 101.

  As shown in FIG. 17, the transfer transistor 22 is configured to output the signal charge generated by the photodiode 21 to the gate of the amplification transistor 23 as an electric signal. Specifically, the transfer transistor 22 transfers a signal charge accumulated in the photodiode 21 as an output signal to the read drain FD when a transfer signal is applied from the transfer line 26 to the gate.

  In the present embodiment, each transfer transistor 22 is provided corresponding to each photodiode 21 as shown in FIG.

  For example, as shown in FIG. 16, each transfer transistor 22 is provided between a plurality of pixels P arranged in a diagonal direction k inclined with respect to the horizontal direction x and the vertical direction y on the imaging surface (xy plane). The read drain FD is formed so that the two transfer transistors 22 sandwich the read drain FD.

  Specifically, as shown in FIG. 16, two transfer transistors 22A_1 and 22A_2 are provided so as to sandwich a read drain FDA provided between two photodiodes 21A_1 and 21A_2 arranged in the tilt direction. Further, two transfer transistors 22B_1 and 22B_2 are provided so as to sandwich a read drain FDB provided between two photodiodes 21B_1 and 21B_2 arranged in the tilt direction.

  In the pixel transistor PTr, the amplification transistor 23 is configured to amplify and output the electrical signal output from the transfer transistor 22, as shown in FIG.

  Specifically, the amplification transistor 23 has a gate connected to the read drain FD. The amplification transistor 23 has a drain connected to the power supply potential supply line Vdd and a source connected to the selection transistor 24. When the selection transistor 24 is selected to be turned on, the amplification transistor 23 is supplied with a constant current from a constant current source (not shown) and operates as a source follower. For this reason, in the amplification transistor 23, the selection signal is supplied to the selection transistor 24, whereby the output signal output from the read drain FD is amplified.

  In the pixel transistor PTr, as shown in FIG. 17, the selection transistor 24 is configured to output the electrical signal output from the amplification transistor 23 to the vertical signal line 27 when a selection signal is input. .

  Specifically, as shown in FIG. 17, the selection transistor 24 has a gate connected to an address line 28 to which a selection signal is supplied. The selection transistor 24 is turned on when the selection signal is supplied, and outputs the output signal amplified by the amplification transistor 23 to the vertical signal line 27 as described above.

  In the pixel transistor PTr, the reset transistor 25 is configured to reset the gate potential of the amplification transistor 23 as shown in FIG.

  Specifically, as shown in FIG. 17, the gate of the reset transistor 25 is connected to a reset line 29 to which a reset signal is supplied. The reset transistor 25 has a drain connected to the power supply potential supply line Vdd and a source connected to the read drain FD. The reset transistor 25 resets the gate potential of the amplification transistor 23 to the power supply potential via the read drain FD when a reset signal is supplied from the reset line 29 to the gate.

  In the present embodiment, each of the amplifying transistor 23, the selection transistor 24, and the reset transistor 25 is configured to be shared by a set of a plurality of photodiodes 21, as shown in FIG.

  For example, as shown in FIG. 16, for each set of four photodiodes 21 (21A_1, 21A_2, 21B_1, 21B_2), one amplification transistor 23, one selection transistor 24, and one reset transistor 25 are provided. It has been.

  For example, each of amplification transistor 23, selection transistor 24, and reset transistor 25 is provided in transistor region TR shown in FIG.

(3) Others Although not shown in FIG. 16, a wiring layer (not shown) is provided on the surface of the substrate 101. In this wiring layer, wiring (not shown) electrically connected to each element is formed in an insulating layer (not shown). Each wiring is formed so as to function as wiring such as the transfer line 26, the address line 28, the vertical signal line 27, and the reset line 29 shown in FIG.

  In addition, the substrate 101 is provided with optical members such as color filters and microlenses corresponding to the pixels P. Although not shown, the color filter is provided with filter layers of each color in a Bayer arrangement, for example, as in the first embodiment.

  18 and 19 are diagrams showing the microlens 61 in the fourth embodiment according to the present invention. Here, FIG. 18 shows the top surface as in FIG. 16, and FIG. 19 shows the cross section of the Y1-Y2 portion of FIG. In FIG. 18, a portion with a high curvature on the lens surface of the microlens is shown with hatching.

  As shown in FIGS. 18 and 19, the microlens 61 is a convex lens having a center formed thicker than the edge, as in the first embodiment, and condenses incident light on the light receiving surface of the photodiode. It is configured as follows.

  Here, as shown in FIG. 18, each microlens 61 is formed so as to have a square planar shape, as in the first embodiment.

  As shown in FIGS. 18 and 19, each microlens 61 is formed such that the side portion corresponding to the transistor region TR has a smaller curvature than the other portions. In the side portion corresponding to the transistor region TR, the groove depth Da formed between the microlenses 61 is formed to be shallower than the groove depth Db of the other portion.

  Each microlens 61 can be formed by performing an etch-back process on the lens base material film after the resist pattern is formed into the lens shape as described above in the same manner as in the first embodiment.

(C) Summary As described above, the plurality of microlenses 61 correspond to the portion where the plurality of photodiodes 21 are arranged on the imaging surface (xy plane) without interposing the transfer transistors constituting the pixel transistors PTr. The depth Db of the groove between is deeper than the depth Da of the groove between the microlenses 61 in other portions. At the same time, the curvature of the lens surface on the side where the plurality of photodiodes 21 are arranged without the transfer transistor constituting the pixel transistor PTr is higher than the curvature of the lens surface in other portions. (See FIGS. 18 and 19).
In other words, the microlens that collects the incident light on the photoelectric conversion unit at a position where the interval between the adjacent photoelectric conversion units is narrow has the depth of the groove at the end of the other microlens where the interval between the adjacent photoelectric conversion units is wide. A microlens that condenses incident light on a photoelectric conversion unit at a position deeper than the depth of the groove at the end and where the interval between the adjacent photoelectric conversion units is narrow, the curvature of the lens surface at the end is adjacent to the photoelectric conversion unit Is wider than the curvature of the lens surface at the other end .

Thus, in this embodiment, the curvature of the lens surface of the microlens 61 is on the transistor region TR provided with the amplification transistor 23, the selection transistor 24, and the reset transistor 25 that constitute the pixel transistor PTr excluding the transfer transistor 22. Since it is small, it is possible to prevent the occurrence of uneven sensitivity and to suppress the influence of reflection from the gate electrodes of these transistors . In addition, since the curvature of the lens surface of the microlens 61 is large between the photodiodes 21 other than on the transistor region TR, color mixing can be prevented and sensitivity can be improved.

In other words, regardless of the arrangement of the wiring layer, the charge accumulated in the photodiode 21 is different between the adjacent photodiodes 21 in the portion where the transfer transistor constituting the pixel transistor PTr is not provided. leaky to a pixel, but the arrangement, it is possible to prevent the occurrence of defects.

  Therefore, the present embodiment can easily improve the image quality of the captured image.

<5. Other>
In carrying out the present invention, the present invention is not limited to the above-described embodiment, and various modifications can be employed.

  20-24 is a figure which shows the principal part of a solid-state imaging device in embodiment concerning this invention. Here, in each figure, (A) shows the upper surface of the solid-state imaging device excluding the microlens and the like, as in FIG. 14, and (B) shows the upper surface of the solid-state imaging device including the microlens. ing. Note that, in (B), as in FIG. 16, a portion where the curvature of the lens surface of the microlens is high is indicated by hatching.

  FIG. 20 shows a case where a shared pixel transistor is provided in the transistor region TR for four pixels P arranged in the vertical direction y (longitudinal direction).

  21 and 22 show a case where a shared pixel transistor is provided in the transistor region TR for two pixels P arranged in the vertical direction y (vertical direction). These configurations are described in Japanese Patent Application Laid-Open No. 2007-81015.

  FIG. 23 shows a case where a shared pixel transistor is provided in the transistor region TR for two pixels P arranged in the horizontal direction x (lateral direction).

  FIG. 24 shows a case where a pixel transistor is provided in the transistor region TR for each pixel P.

  In each of the above drawings, as in the fourth embodiment, since the curvature of the lens surface of the microlens 61 is small on the transistor region TR, the occurrence of sensitivity unevenness is prevented and the influence of reflection from the gate electrode is suppressed. Is possible. In addition, since the curvature of the lens surface of the microlens 61 is large between the photodiodes 21 other than on the transistor region TR, color mixing can be prevented and sensitivity can be improved.

  In the above-described embodiment, the case of the so-called “surface irradiation type” has been described. However, the present invention is not limited to this. The present invention can also be applied to the “backside illumination type”. In the “backside illumination type”, in particular, there is a problem such as the occurrence of color mixing between adjacent pixels. However, by applying the present invention, the occurrence of color mixing can be effectively prevented.

  In the above embodiment, the solid-state imaging device 1 corresponds to the solid-state imaging device of the present invention. Moreover, in said embodiment, the photodiode 21 is corresponded to the photoelectric conversion part of this invention. In the above embodiment, the charge transfer channel region 23T corresponds to the transfer channel region of the present invention. In the above embodiment, the vertical transfer register unit VT corresponds to the transfer unit of the present invention. In the above embodiment, the microlens 61 corresponds to the microlens of the present invention. In the above embodiment, the substrate 101 corresponds to the substrate of the present invention. In the above embodiment, the lens base material film 111z corresponds to the lens base material film of the present invention. In the above embodiment, the camera 200 corresponds to the electronic apparatus of the present invention. In the above embodiment, the light receiving surface JS corresponds to the light receiving surface of the present invention. In the above embodiment, the pixel P corresponds to the pixel of the present invention. In the above embodiment, the imaging surface PS corresponds to the imaging surface of the present invention. In the above embodiment, the pixel transistor PTr corresponds to the pixel transistor of the present invention. In the above embodiment, the resist pattern RP corresponds to the resist pattern of the present invention. In the above embodiment, the diagonal direction k corresponds to the third direction of the present invention. In the above embodiment, the horizontal direction x corresponds to the first direction of the present invention. In the above embodiment, the vertical direction y corresponds to the second direction of the present invention.

1: solid-state imaging device, 13: vertical drive circuit, 14: column circuit, 15: horizontal drive circuit, 17: external output circuit, 17a: AGC circuit, 17b: ADC circuit, 18: timing generator, 19: shutter drive circuit, 21: photodiode, 22R: charge readout channel region, 22: transfer transistor, 23T: charge transfer channel region, 23: amplification transistor, 24C: channel stopper region, 24: selection transistor, 25: reset transistor, 26: transfer line, 27: Vertical signal line, 28: Address line, 29: Reset line, 31: Transfer electrode, 41: Metal light shielding film, 42: Optical system, 45: In-layer lens, 51: Color filter, 51B: Blue filter layer, 51G : Green filter layer, 51R: Red filter layer, 61: Micro lens 101: substrate, 111z: lens base material film, 200: camera, 202: optical system, 203: drive circuit, 204: signal processing circuit, FD: readout drain, Gx: gate insulating film, H: incident light, HT: horizontal Transfer register unit, FT: transflective unit, HT1: planarizing film, JS: light receiving surface, P: pixel, A: imaging region, PM: photomask, PS: imaging surface, PTr: pixel transistor, RO: charge readout unit , RP: resist pattern, SA: peripheral area, SK: light shielding part, SS: element isolation part, Sz: insulating film, TR: transistor area, TT: transmission part, VT: vertical transfer register part, Vdd: power supply potential supply line , K: diagonal direction, x: horizontal direction, y: vertical direction, z: depth direction s

Claims (6)

Arranged side by side in a first direction and a second direction orthogonal to the first direction on the imaging surface of the substrate, and generates a signal charge corresponding to the light received incident light on the light receiving surface. A plurality of photoelectric conversion units;
A plurality of photoelectric conversion units disposed at positions corresponding to the plurality of photoelectric conversion units on the incident light incident side of the light receiving surfaces of the plurality of photoelectric conversion units, and collecting the incident light on the light receiving surfaces. A microlens,
It is provided in a region that separates adjacent photoelectric conversion units on the imaging surface, is connected to the corresponding photoelectric conversion unit, and reads and outputs the signal charge generated by the corresponding photoelectric conversion unit. Each of which includes a plurality of pixel transistors including a transfer transistor, an amplification transistor, a selection transistor, and a reset transistor,
The transfer transistor constituting the pixel transistor is connected to the photoelectric conversion unit in the vicinity of the photoelectric conversion unit,
Transistors other than the transfer transistor constituting the pixel transistor are disposed in a transistor region at a position separated from a position where the transfer transistor is disposed,
It said plurality of microlenses each is a square shape including the segmented portions by the sides a planar shape in the imaging surface extending in the second direction and sides extending in the first direction, the light receiving It has a shape of a convex lens center is thicker than the edge in the depth direction from the surface in the photoelectric conversion unit, the photoelectric conversion unit that corresponds Te smell each of the first direction and the second direction It is arranged side by side so as to collect incident light,
The depth of the groove in the depth direction of the end portion of the microlens in the third direction inclined by 45 degrees with respect to the first direction and the second direction is determined by the microlens in the first direction and the second direction. Deeper than the depth of the groove in the depth direction at the end ,
The curvature of the lens surface at the end of the micro lens in the third direction is greater than the curvature of the lens surface of the micro lens in the first direction and the second direction ;
Solid-state imaging device. A plurality of photoelectric conversion units that receive incident light at the light receiving surface and generate signal charges are arranged in a first direction and a second direction orthogonal to the first direction on the imaging surface of the substrate. A photoelectric conversion part forming step;
Read and output the signal charge generated in the photoelectric conversion unit, each of which includes a plurality of pixel transistors including a transfer transistor, an amplification transistor, a selection transistor, and a reset transistor, and the transfer transistor includes the photoelectric conversion The imaging surface is arranged such that transistors other than the transfer transistor that constitutes the pixel transistor are connected to a photoelectric conversion unit in the vicinity of the unit, and are disposed in a transistor region that is spaced apart from a position where the transfer transistor is disposed. A pixel transistor forming step provided between the plurality of photoelectric conversion units;
Microlenses that condense the incident light onto the light receiving surface are formed so that a plurality of microlenses are arranged in the first direction and the second direction above the light receiving surfaces of the plurality of photoelectric conversion units, respectively. Forming process, and
In the microlens forming step, each of the plurality of micro lenses, the portion partitioned by the side planar shape extending in the second direction and sides extending in the first direction in the imaging plane a rectangular shape including in the shape of convex lens center in the depth direction toward the photoelectric conversion unit from the light receiving surface is formed thicker than the edge, each of said first direction and said second direction incident light to a photoelectric conversion unit that corresponds Te odor to collect light, thereby forming a plurality of microlenses so arranged in contact with each other, inclined 45 degrees with respect to the first direction and the second direction the depth of the depth direction of the groove of the end of the microlens in the third direction, deeper than the depth of the depth direction of the groove of the end of the micro lenses in the first direction and the second direction, Curvature of the lens surface of the end portion of the microlenses in the serial third direction is larger than the curvature of the lens surface of the microlenses in the first direction and the second direction to form,
Manufacturing method of solid-state imaging device. The microlens formation step includes
A lens base material film forming step for forming a lens base material film on the substrate;
A resist pattern forming step for forming a resist pattern on the lens base material film; and a thermal reflow processing step for performing a thermal reflow processing on the resist pattern;
A lens base material film processing step of patterning the lens base material film into the microlens by performing an etch back process for etching back the reflowed resist pattern and the lens base material film.
A method for manufacturing a solid-state imaging device according to claim 2. In the thermal reflow processing step, the resist pattern of the portion where the plurality of photoelectric conversion units are arranged without the transfer transistor being spaced apart from each other on the imaging surface is maintained, and the resist pattern is arranged in another portion A thermal reflow process is performed on the resist pattern so that they are fused to each other.
A method for manufacturing the solid-state imaging device according to claim 3. In the thermal reflow treatment step, as the thermal reflow treatment, post-baking is performed a plurality of times, and among the plurality of post-baking processes, the post-baking performed later is performed before the post-baking. Implement each post-bake treatment so that the heat treatment temperature is higher than the treatment,
The manufacturing method of the solid-state imaging device of Claim 4. They are arranged in each direction of the second direction perpendicular to the first direction as the first direction in the imaging plane of the substrate, to generate a signal charge corresponding to received light to incident light by the light receiving surface A plurality of photoelectric conversion units;
A plurality of photoelectric conversion units disposed at positions corresponding to the plurality of photoelectric conversion units on the incident light incident side of the light receiving surfaces of the plurality of photoelectric conversion units, and collecting the incident light on the light receiving surfaces. A microlens,
It is provided in a region that separates adjacent photoelectric conversion units on the imaging surface, is connected to the corresponding photoelectric conversion unit, and reads and outputs the signal charge generated by the corresponding photoelectric conversion unit. Each of which includes a plurality of pixel transistors including a transfer transistor, an amplification transistor, a selection transistor, and a reset transistor,
The transfer transistor constituting the pixel transistor is connected to the photoelectric conversion unit in the vicinity of the photoelectric conversion unit,
Transistors other than the transfer transistor constituting the pixel transistor are disposed in a transistor region at a position separated from a position where the transfer transistor is disposed,
It said plurality of microlenses each is a square shape including the segmented portions by the sides a planar shape in the imaging surface extending in the second direction and sides extending in the first direction, the light receiving It has a shape of a convex lens center is thicker than the edge in the depth direction from the surface in the photoelectric conversion unit, the photoelectric conversion unit that corresponds Te smell each of the first direction and the second direction It is arranged side by side so as to collect incident light,
The depth of the groove in the depth direction of the end portion of the microlens in the third direction inclined by 45 degrees with respect to the first direction and the second direction is determined by the microlens in the first direction and the second direction. Deeper than the depth of the groove in the depth direction at the end ,
The curvature of the lens surface at the end of the micro lens in the third direction is larger than the curvature of the lens surface of the micro lens in the first direction and the second direction .
Electronics.

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