JP6022949B2 - Photoelectric conversion module - Google Patents

Description

  The present invention relates to a photoelectric conversion module in which a photoelectric conversion part is sealed with a sealing material.

  In recent years, photovoltaic power generation that converts light energy into electric energy has attracted attention as energy problems and environmental problems become more serious.

  There are various types of photoelectric conversion modules used for photovoltaic power generation. Among them, those using compound semiconductor thin films such as CIS (copper indium selenide) and CIGS (copper indium gallium selenide) and thin film semiconductor layers such as amorphous silicon thin films are relatively low. Research and development are being promoted because a large-area photoelectric conversion module can be easily manufactured at low cost.

  In this thin film photoelectric conversion module, a photoelectric conversion unit in which a lower electrode layer, a semiconductor layer, and an upper electrode layer are laminated on a first substrate such as a glass substrate is provided. One end portions of wiring conductors such as lead wires are connected to the positive electrode and the negative electrode of the photoelectric conversion portion, respectively, and the other end portions of these wiring conductors are led to a terminal box disposed on the back surface of the first substrate. ing. Then, a sealing material such as ethylene vinyl acetate copolymer (hereinafter referred to as EVA) is provided on the first substrate so as to cover these photoelectric conversion parts and wiring conductors, and further white reinforcement is provided on this sealing material. A second substrate made of glass or the like is provided.

  Moreover, in such a photoelectric conversion module, when moisture permeates from the outside, the photoelectric conversion unit may deteriorate and the photoelectric conversion efficiency may decrease. Therefore, in such a photoelectric conversion module, a sealing material for blocking moisture is arranged so as to cover the outer peripheral surface of the sealing material (see, for example, Patent Document 1).

JP 2011-231309 A

  The photoelectric conversion module is always required to improve moisture resistance. In the said photoelectric conversion module, the penetration | invasion of a water | moisture content to a photoelectric conversion part cannot fully be suppressed, and the further improvement in moisture resistance is desired.

  This invention is made | formed in view of the said subject, and aims at the improvement of the moisture resistance of a photoelectric conversion module.

The photoelectric conversion module which concerns on one Embodiment of this invention is a board | substrate which has the 1st main surface and 2nd main surface which oppose, the photoelectric conversion part distribute | arranged on the center part of the said 1st main surface, The said 1st A connection electrode disposed on an outer edge portion of the main surface and electrically connected to the photoelectric conversion portion, and one end portion connected to the connection electrode and the other end portion of the substrate 2 a wiring conductor led out to the main surface side, a sealing material that seals the photoelectric conversion unit on a central portion of the first main surface, and an outer surface of the sealing material and the first main surface And a sealing material that seals the wiring conductor on the outer edge portion. The substrate has a quadrangular shape, and the wiring conductor extends along a first portion along a first side of the four sides of the substrate and a second side adjacent to the first side. A second portion and a third portion along a third side adjacent to the second side.
A photoelectric conversion module according to another embodiment of the present invention includes a substrate having opposing first main surface and second main surface, a photoelectric conversion unit disposed on a central portion of the first main surface, and the first A connection electrode disposed on an outer edge of one main surface and electrically connected to the photoelectric conversion unit; one end connected to the connection electrode and the other end of the substrate; A wiring conductor led out to the second main surface side, a sealing material that seals the photoelectric conversion unit on a central portion of the first main surface, an outer surface of the sealing material and the first main surface And a sealing material for sealing the wiring conductor on the outer edge portion of the surface. Further, a linear metal member is arranged along the outer periphery of the photoelectric conversion portion on the outer edge portion of the first main surface, and the sealing material also seals the metal member.

  According to the photoelectric conversion module according to one embodiment of the present invention, the moisture resistance reliability of the photoelectric conversion module is improved.

It is a principal part expansion perspective view which shows the photoelectric conversion part in the photoelectric conversion module which concerns on one Embodiment. It is sectional drawing of the photoelectric conversion part of FIG. It is a perspective view showing the whole photoelectric conversion module concerning one embodiment. It is sectional drawing of the photoelectric conversion module of FIG. It is a top view of the photoelectric conversion module of FIG. It is a top view of the photoelectric conversion module which concerns on a 1st modification. It is a top view of the photoelectric conversion module which concerns on a 2nd modification. It is a top view of the photoelectric conversion module which concerns on a 3rd modification. It is a top view of the photoelectric conversion module which concerns on a 4th modification.

  Hereinafter, a photoelectric conversion module according to an embodiment of the present invention will be described in detail with reference to the drawings. In the drawings, parts having the same configuration and function are denoted by the same reference numerals, and redundant description is omitted in the following description. Further, the drawings are schematically shown, and the sizes, positional relationships, and the like of various structures in the drawings are not accurately illustrated. 1 to 9 also have right-handed XYZ coordinates with the X-axis being the alignment direction of photoelectric conversion cells described later. First, a photoelectric conversion unit that is a part of the photoelectric conversion module will be described.

<Configuration of photoelectric conversion unit>
FIG. 1 is an enlarged perspective view of a main part of the photoelectric conversion unit 11, and FIG. 2 is an XZ sectional view thereof. The photoelectric conversion unit 11 is an aggregate of a plurality of photoelectric conversion cells 10 provided so as to be arranged along the X-axis direction on the main surface of the first substrate 1. The photoelectric conversion cell 10 includes a lower electrode layer 2, a first semiconductor layer 3 having a first conductivity type, a second semiconductor layer 4 having a second conductivity type different from the first conductivity type, The upper electrode layer 5 is laminated in order. For example, if the first conductivity type is p-type, the second conductivity type is n-type, and vice versa. These first semiconductor layer 3 and second semiconductor layer 4 form a photoelectric conversion layer capable of separating charges well.

  In the photoelectric conversion unit 11, the upper electrode layer 5 of one adjacent photoelectric conversion cell 10 and the lower electrode layer 2 of the other photoelectric conversion cell 10 are electrically connected via a connection conductor 6. With such a configuration, adjacent photoelectric conversion cells 10 are connected in series. And the connection electrode 2a electrically connected with one electrode of the photoelectric conversion cell 10 connected in series is provided in the edge part of the photoelectric conversion part 11, and the photoelectric conversion part 11 is provided in this connection electrode 2a. A wiring conductor 13a for electrical connection with the outside is connected. Similarly, a connection electrode 2b electrically connected to the other electrode of the photoelectric conversion cell 10 connected in series is provided at the opposite end of the photoelectric conversion unit 11, and the connection electrode 2b A wiring conductor 13b for electrical connection to the outside of the photoelectric conversion unit 11 is connected.

  1 and 2, only two photoelectric conversion cells 10 are shown for convenience of illustration. However, in the actual photoelectric conversion unit 11, the X-axis direction in the drawing, or further the Y-axis direction in the drawing. In addition, a large number of photoelectric conversion cells 10 are arranged in a plane (two-dimensionally).

The 1st board | substrate 1 is flat form which has the 1st main surface and 2nd main surface which oppose, and is supporting the photoelectric conversion part on the 1st main surface. Examples of the material used for the first substrate 1 include glass, ceramics, resin, and metal. As the first substrate 1, for example, blue plate glass (soda lime glass) having a thickness of about 1 to 3 mm may be used.

  The lower electrode layer 2 (lower electrode layers 2 a to 2 d) is a conductor such as Mo, Al, Ti, or Au provided on the first substrate 1. The lower electrode layer 2 is formed to a thickness of about 0.2 μm to 1 μm using a known thin film forming method such as sputtering or vapor deposition.

  The first semiconductor layer 3 is a semiconductor layer having the first conductivity type. The first semiconductor layer 3 has a thickness of about 1 μm to 3 μm, for example. The material of the first semiconductor layer 3 is not particularly limited, and a thin film semiconductor layer such as a compound semiconductor thin film or an amorphous silicon thin film can be used. From the viewpoint of having a relatively high photoelectric conversion efficiency, for example, an I-III-VI group compound, an I-II-IV-VI group compound, an II-VI group compound or the like is used as the first semiconductor layer 3. Also good.

An I-III-VI group compound is a group consisting of a group IB element (also referred to as a group 11 element), a group III-B element (also referred to as a group 13 element), and a group VI-B element (also referred to as a group 16 element). A compound. Examples of the I-III-VI group compound include CuInSe ₂ (also referred to as copper indium selenide, CIS), Cu (In, Ga) Se ₂ (also referred to as copper indium selenide / gallium, CIGS), Cu ( In, Ga) (Se, S) ₂ (also referred to as diselene, copper indium sulphide, gallium, or CIGSS). Alternatively, the first semiconductor layer 3 may be composed of a multi-component compound semiconductor thin film such as copper indium selenide / gallium having a thin film of selenite / copper indium sulfide / gallium layer as a surface layer. The I-III-VI group compound has a relatively high light absorption coefficient, and good photoelectric conversion efficiency can be obtained even if the first semiconductor layer 3 is thin.

The I-II-IV-VI group compound includes an IB group element, an II-B group element (also referred to as a group 12 element), an IV-B group element (also referred to as a group 14 element), and a VI-B group element. It is a compound semiconductor. Examples of the I-II-IV-VI group compound include Cu ₂ ZnSnS ₄ (also referred to as CZTS) and Cu ₂ ZnSnS _4-x Se _x (also referred to as CZTSSe. Note that x is a number greater than 0 and smaller than 4. And Cu ₂ ZnSnSe ₄ (also referred to as CZTSe).

  The II-VI group compound is a compound semiconductor of a II-B group element and a VI-B group element. CdTe etc. are mentioned as a II-VI group compound.

  The second semiconductor layer 4 is a semiconductor layer having a second conductivity type different from that of the first semiconductor layer 3. The second semiconductor layer 4 may be formed by stacking a material different from that of the first semiconductor layer 3 on the first semiconductor layer 3, or the surface portion of the first semiconductor layer 3 may be other than the first semiconductor layer 3. It may be modified by elemental doping.

The second semiconductor layer 4 includes CdS, ZnS, ZnO, In ₂ S ₃ , In ₂ Se ₃ , In (OH, S), (Zn, In) (Se, OH), and (Zn, Mg) O. Etc. In this case, the second semiconductor layer 4 is formed with a thickness of 10 to 200 nm by, for example, a chemical bath deposition (CBD) method. In (OH, S) refers to a compound mainly containing In, OH, and S. (Zn, In) (Se, OH) refers to a compound mainly containing Zn, In, Se, and OH. (Zn, Mg) O refers to a compound mainly containing Zn, Mg and O.

As shown in FIGS. 1 and 2, an upper electrode layer 5 may be further provided on the second semiconductor layer 4. The upper electrode layer 5 is a layer having a lower resistivity than the second semiconductor layer 4, and carriers generated in the first semiconductor layer 3 and the second semiconductor layer 4 are extracted well. From the viewpoint of increasing the photoelectric conversion efficiency, the resistivity of the upper electrode layer 5 is less than 1 Ω · cm and the sheet resistance is 50 Ω / cm.
□ It may be the following.

  The upper electrode layer 5 is a 0.05 to 3 μm transparent conductive film such as ITO or ZnO. In order to improve translucency and conductivity, the upper electrode layer 5 may be composed of a semiconductor having the same conductivity type as the second semiconductor layer 4. The upper electrode layer 5 can be formed by sputtering, vapor deposition, chemical vapor deposition (CVD), or the like.

  Further, as shown in FIGS. 1 and 2, a collecting electrode 7 may be further formed on the upper electrode layer 5. The current collecting electrode 7 is for taking out the carriers generated in the first semiconductor layer 3 and the second semiconductor layer 4 more satisfactorily. For example, as shown in FIG. 1, the collector electrode 7 is formed in a linear shape from one end of the photoelectric conversion cell 10 to the connection conductor 6. As a result, the current generated in the first semiconductor layer 3 and the fourth semiconductor layer 4 is collected by the current collecting electrode 7 via the upper electrode layer 5, and is supplied to the adjacent photoelectric conversion cell 10 via the connection conductor 6. Good conductivity.

  The collector electrode 7 may have a width of 50 to 400 μm from the viewpoint of increasing the light transmittance to the first semiconductor layer 3 and having good conductivity. The current collecting electrode 7 may have a plurality of branched portions.

  The collector electrode 7 is formed, for example, by printing a metal paste in which a metal powder such as Ag is dispersed in a resin binder or the like in a pattern and curing it.

  In FIGS. 1 and 2, the connection conductor 6 is a conductor provided in a groove that penetrates (divides) the first semiconductor layer 3, the second semiconductor layer 4, and the second electrode layer 5. The connection conductor 6 can be made of metal, conductive paste, or the like. In FIG. 1 and FIG. 2, the collector electrode 7 is extended to form the connection conductor 6, but the present invention is not limited to this. For example, the upper electrode layer 5 may be stretched.

<Configuration of photoelectric conversion module>
Next, the photoelectric conversion module will be described in detail. FIG. 3 is a perspective view showing the entire photoelectric conversion module 200 according to one embodiment, and FIG. 4 is a cross-sectional view thereof. FIG. 5 is a plan view of the photoelectric conversion module 200 viewed from above with the second substrate removed.

  As shown in FIGS. 3 and 4, the photoelectric conversion module 200 includes a translucent second substrate 12 on a first substrate 1 with a translucent sealing material 20 and a sealing material 21 interposed therebetween. . Further, as shown in FIG. 5, the sealing material 20 seals the photoelectric conversion unit 11 on the central portion of the first main surface of the first substrate. Furthermore, the sealing material 21 covers the outer surface of the sealing material 20 and seals the wiring conductor 13a and the wiring conductor 13b on the outer edge portion of the first main surface of the first substrate.

  With such a configuration, the moisture resistance reliability of the photoelectric conversion module 200 is improved. That is, in the conventional photoelectric conversion module, moisture enters the photoelectric conversion unit 11 through the interface between the wiring conductor and the sealing material, and the photoelectric conversion unit 11 tends to be deteriorated by the penetrated moisture. On the other hand, in the photoelectric conversion module 200 of the above embodiment, since the wiring conductors 13a and 13b that are likely to become moisture infiltration paths are well sealed with the sealing material 21, the infiltration of moisture into the photoelectric conversion unit 11 is greatly increased. Reduced. In particular, the connection portion between the wiring conductor 13a and the connection electrode 2a and the connection portion between the wiring conductor 13b and the connection electrode 2b are sealed with the sealing material 21, so that the wiring conductors 13a and 13b and the connection electrode are sealed. Connection reliability with 2a and 2b becomes higher.

The sealing material 20 is for protecting the photoelectric conversion cell 10 and is provided from the photoelectric conversion cell 10 to the first substrate 1. Further, the sealing material 20 has a light-transmitting property with respect to light used for photoelectric conversion of the photoelectric conversion unit 11. Examples of such a sealing material 20 include a resin mainly composed of ethylene vinyl acetate copolymer (EVA) and a resin mainly composed of polyvinyl butyral.

  The sealing material 21 is provided in close contact with the outer peripheral surface of the sealing material 20 so as to surround the sealing material 20. The sealing material 21 is for reducing moisture from entering the photoelectric conversion cell 10, and a member having a moisture permeability lower than that of the sealing material 20 is used. As such a sealing material 21, a resin such as polyethylene, an elastic body made of rubber such as butyl rubber or ethylene propylene rubber, or a mixture of the above-described resin and rubber can be used.

Further, as the sealing material 21, a polymer material in which an adsorbent is dispersed may be used. As such an adsorbent, those having the property of chemically adsorbing moisture may be used, or those having the property of physically adsorbing moisture may be used. The adsorbent that chemically adsorbs moisture has a property of chemically adsorbing with moisture and chemical reaction. For example, calcium oxide (CaO), sodium oxide (Na ₂ O), magnesium oxide (MgO), chloride calcium (CaCl _2), anhydrous sodium sulfate _(Na 2 _SO 4), and the like copper sulfate anhydrous salt (CuSO ₄₎ or calcium sulfate (CaSO _4). An adsorbent that physically adsorbs moisture adsorbs moisture by van der Waals force generated between the surface of the adsorbent and moisture. For example, molecular sieves such as zeolite, silica gel (SiO ₂ .nH ₂ O), inorganic materials having a porous surface such as alumina, allophane or activated carbon.

Further, from the viewpoint of further restricting the expansion and contraction of the sealing material 20 and further improving the sealing reliability, the thermal expansion coefficient of the sealing material 21 may be smaller than the thermal expansion coefficient of the sealing material 20. For example, the linear expansion coefficient of the sealing material 21 may be 0.05 to 0.9 times the linear expansion coefficient of the sealing material 20.

  The wiring conductors 13a and 13b are electrically connected to the connection electrode portions 2a and 2b on the photoelectric conversion unit 11, respectively. Further, as shown in FIG. 3, the other ends of the wiring conductors 13a and 13b are led out to the back surface (second main surface) through a hole 1a penetrating the first substrate 1 in the vertical direction, and are subjected to photoelectric conversion. The module 200 is connected to a terminal box arranged on the second main surface. Then, the electric power generated by the photoelectric conversion module 200 is output to an external circuit through this terminal box. Note that the derivation of the wiring conductors 13a and 13b to the second main surface of the first substrate 1 is not limited to the configuration through the hole 1a as shown in FIG. 3, and the second main surface passes through the side surface of the first substrate 1. The configuration derived in (1) may be used.

  For the wiring conductors 13a and 13b, for example, a metal foil such as copper (Cu) having a thickness of about 0.1 to 0.5 mm and a width of about 1 to 7 mm is used. Also. The surface of the metal foil may be coated with tin, nickel, aluminum, solder, or the like by plating or the like in order to improve electrical connection with the connection electrode portions 2a and 2b.

  When the first substrate 1 has a quadrangular shape such as a rectangular shape as shown in FIG. 5, the wiring conductor 13 a is one of the four sides of the first substrate 1 (the + Y side in FIG. 5 is the first side). A first portion 13-1a along the first side) and a second portion 13-2a along the side adjacent to the first side (the side on the + X side in FIG. 5 is the second side). You may do it. Similarly, the wiring conductor 13b includes a first portion 13-1b along one side (first side) of four sides of the quadrangular shape, and a side adjacent to the first side (on the −X side in FIG. 5). And the second portion 13-2b along the fourth side). In this case, the wiring conductor 13a made of metal is to allow the moisture that has penetrated into the sealing material 21 from the first side and the second side or the first side and the fourth side to further penetrate into the photoelectric conversion unit 11 side. Or it can reduce effectively by the wiring conductor 13b, and humidity resistance reliability improves more.

<First Modification of Photoelectric Conversion Module>
Next, a modification of the photoelectric conversion module of the present invention will be described. FIG. 6 is a cross-sectional view showing a first modification of the photoelectric conversion module. In the photoelectric conversion module 300 shown in FIG. 6, the same reference numerals as those in FIG. 5 are given to portions having the same configuration and functions as those of the photoelectric conversion module 200 shown in FIG. 5 described above. In the photoelectric conversion module 300, the wiring conductor 33a includes a first portion 33-1a and a second side (side on the + X side in FIG. 6) along the first side (the side on the + Y side in FIG. 6 is the first side). In addition to the second portion 33-2a along the second side), and the third portion 33 along the side adjacent to the second side (the side on the -Y side in FIG. 6 is taken as the third side). -3a. Similarly, the wiring conductor 33b is connected to the first part 33-1b along the first side and the second part 33-2a along the fourth side (the side on the -X side in FIG. 6 is the fourth side). In addition, it further has a third portion 33-3b along the third side adjacent to the fourth side.

  With such a configuration, it is more effective in the wiring conductor 33a or the wiring conductor 33b made of metal that the moisture that has penetrated into the sealing material 21 from the first side to the fourth side further penetrates into the photoelectric conversion unit 11 side. The humidity resistance reliability is further improved.

<Second Modification of Photoelectric Conversion Module>
FIG. 7 is a cross-sectional view showing a second modification of the photoelectric conversion module. In the photoelectric conversion module 400 shown in FIG. 7, the same reference numerals as those in FIG. 5 are given to parts having the same configuration and functions as those of the photoelectric conversion module 200 shown in FIG. 5 described above. The photoelectric conversion module 400 includes a first portion 43-1a and a second side (the side on the + X side in FIG. 7) along which the wiring conductor 43a is along the first side (the side on the + Y side in FIG. 7 is the first side). The second part 43-2a along the second side), and in the vicinity of the connection part 43-12a of the first part 43-1a and the second part 43-2a, the first part 43-1a And the 2nd site | part 43-2a is thicker than another site | part. Similarly, the wiring conductor 43b has a first part 43-1b along the first side and a second part 43-2b along the fourth side (the side on the -X side in FIG. 7 is the fourth side). In the vicinity of the connection part 43-12b of the first part 43-1b and the second part 43-2b, the first part 43-1b and the second part 43-2b are thicker than the other parts. .

  With such a configuration, in the rectangular connection part 43-12a or the connection part 43-12b where stress tends to concentrate due to thermal expansion or the like, the contact area with the sealing material 21 is increased. As a result, it is possible to more effectively reduce the occurrence of peeling at the interface between the sealing material 21 and the wiring conductors 43a and 43b and providing a moisture intrusion path.

<Third Modification of Photoelectric Conversion Module>
FIG. 8 is a cross-sectional view showing a third modification of the photoelectric conversion module. In the photoelectric conversion module 500 shown in FIG. 8, the same reference numerals as those in FIG. 5 are given to parts having the same configuration and function as the photoelectric conversion module 200 shown in FIG. 5 described above. In the photoelectric conversion module 500, the first conductor 53-1a and the second side (the side on the + X side in FIG. 8) are arranged along the first side (the side on the + Y side in FIG. 8 is the first side) of the wiring conductor 53a. In addition to the second part 53-2a along the second side), it has a third part 53-3a along the third side (the side on the -Y side in FIG. 8 is taken as the third side). In the vicinity of the connection portion 53-23a between the second part 53-2a and the third part 53-3a, the second part 53-2a and the third part 53-3a are thicker than the other parts. Similarly, the wiring conductor 53b is added to the first part 53-1b along the first side and the second part 53-2b along the fourth side (the side on the −X side in FIG. 8 is the fourth side). And has a third part 53-3b along the third side, in the vicinity of the connection part 53-23b of the second part 53-2b and the third part 53-3b. The 3 part 53-3b is thicker than the other parts.

  With such a configuration, in the rectangular connection part 53-23a or the connection part 53-23b where stress is likely to be concentrated due to thermal expansion or the like, the contact area with the sealing material 21 is increased. As a result, it is possible to more effectively reduce the occurrence of separation at the interface between the sealing material 21 and the wiring conductors 53a and 53b and forming a moisture infiltration path.

  Further, as shown in FIG. 8, the photoelectric conversion module 500 further includes the first part 53-in the vicinity of the connection part 53-12 a of the first part 53-1 a and the second part 53-2 a. 1a and the 2nd site | part 53-2a may be thicker than another site | part. Similarly, in the vicinity of the connection part 53-12b of the first part 53-1b and the second part 53-2b, the first part 53-1b and the second part 53-2b are thicker than the other parts. It may be. Thereby, also in the connection part 53-23a or the connection part 53-23b, the contact | adherence area with the sealing material 21 becomes high, and the penetration | invasion of the water | moisture content to the photoelectric conversion part 11 can be reduced more.

<Fourth Modification of Photoelectric Conversion Module>
FIG. 9 is a cross-sectional view showing a fourth modification of the photoelectric conversion module. In the photoelectric conversion module 600 shown in FIG. 9, the same reference numerals as those in FIG. 5 are given to portions having the same configuration and functions as those of the photoelectric conversion module 200 shown in FIG. 5 described above. In the photoelectric conversion module 600, a linear metal member 60 is further arranged on the outer edge portion of the first main surface of the first substrate 1 along the outer periphery of the photoelectric conversion unit 11, and the sealing material 21 is the metal member 60. Is also sealed. With such a configuration, the metal member 60 can effectively reduce the moisture that has penetrated into the sealing material 21 from the outside and further penetrates into the photoelectric conversion unit 11 side, and the moisture resistance reliability is further improved. In addition, as the metal member 60, copper, aluminum, etc. can be used, for example.

  Note that the present invention is not limited to the above-described embodiment, and various modifications may be made without departing from the scope of the present invention. For example, in any of the photoelectric conversion modules 200, 300, 400, 500, and 600, the wiring conductors 13a, 13b, 33a, 33b, 43a, 43b, 53a, and 53b may have a branch portion. In the case where the wiring conductors are arranged in parallel by the branching portion, it is possible to more effectively reduce the moisture that has penetrated into the sealing material 21 from further penetrating into the photoelectric conversion unit 11 side.

1: First substrate 2: Lower electrode layer 2a, 2b: Connection electrode 3: First semiconductor layer 4: Second semiconductor layer 5: Upper electrode layer 10: Photoelectric conversion cell 11: Photoelectric conversion unit 12: Second Substrate 13a, 13b, 33a, 33b, 43a, 43b, 53a, 53b: Wiring conductor 60: Metal member 20: Sealing material 21: Sealing material 200, 300, 400, 500, 600: Photoelectric conversion module

Claims (4)

A substrate having opposing first and second major surfaces;
A photoelectric conversion unit disposed on a central portion of the first main surface;
A connection electrode disposed on the outer edge of the first main surface and electrically connected to the photoelectric conversion unit;
A wiring conductor having one end connected to the connection electrode and the other end led to the second main surface of the substrate;
A sealing material that seals the photoelectric conversion unit on a central portion of the first main surface;
A sealing material that covers the outer surface of the sealing material and seals the wiring conductor on the outer edge of the first main surface ;
The substrate has a quadrangular shape, and the wiring conductor includes a first part along a first side of four sides of the substrate and a second side along a second side adjacent to the first side. A photoelectric conversion module having two parts and a third part along a third side adjacent to the second side . In the vicinity of the first portion and the second portion of the connecting portion, the first portion and the second portion is thicker than the other portions, the photoelectric conversion module of claim 1. In the vicinity of the second portion and the connecting portion of the third portion, said second portion and said third portion is made thicker than other portions, the photoelectric conversion module according to claim 1 or 2. A substrate having opposing first and second major surfaces;
A photoelectric conversion unit disposed on a central portion of the first main surface;
A connection electrode disposed on the outer edge of the first main surface and electrically connected to the photoelectric conversion unit;
A wiring conductor having one end connected to the connection electrode and the other end led to the second main surface of the substrate;
A sealing material that seals the photoelectric conversion unit on a central portion of the first main surface;
A sealing material that covers the outer surface of the sealing material and seals the wiring conductor on the outer edge of the first main surface;
Wherein with the first main surface outer edge portion further linear metal member is disposed along the outer periphery of the photoelectric conversion unit, photoelectric conversion module the sealing material that have seals also seal the metal member.

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