JP5945416B2 - 上塗りフォトレジストと共に使用するためのコーティング組成物 - Google Patents
上塗りフォトレジストと共に使用するためのコーティング組成物 Download PDFInfo
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- JP5945416B2 JP5945416B2 JP2012000226A JP2012000226A JP5945416B2 JP 5945416 B2 JP5945416 B2 JP 5945416B2 JP 2012000226 A JP2012000226 A JP 2012000226A JP 2012000226 A JP2012000226 A JP 2012000226A JP 5945416 B2 JP5945416 B2 JP 5945416B2
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- photoresist
- coating composition
- resin
- uracil
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- 229920002120 photoresistant polymer Polymers 0.000 title claims description 72
- 239000008199 coating composition Substances 0.000 title claims description 56
- 239000000203 mixture Substances 0.000 claims description 78
- 229920005989 resin Polymers 0.000 claims description 62
- 239000011347 resin Substances 0.000 claims description 62
- ISAKRJDGNUQOIC-UHFFFAOYSA-N Uracil Chemical group O=C1C=CNC(=O)N1 ISAKRJDGNUQOIC-UHFFFAOYSA-N 0.000 claims description 51
- 239000000758 substrate Substances 0.000 claims description 35
- 230000005855 radiation Effects 0.000 claims description 23
- 229940035893 uracil Drugs 0.000 claims description 18
- 230000003667 anti-reflective effect Effects 0.000 claims description 17
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 14
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims description 10
- 229920000728 polyester Polymers 0.000 claims description 10
- 239000001257 hydrogen Substances 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 6
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical group OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 claims description 4
- 125000005577 anthracene group Chemical group 0.000 claims description 3
- 239000003431 cross linking reagent Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 26
- 229920000642 polymer Polymers 0.000 description 24
- 150000001875 compounds Chemical class 0.000 description 20
- 239000002253 acid Substances 0.000 description 19
- -1 benzoguanamine compound Chemical class 0.000 description 19
- 239000011247 coating layer Substances 0.000 description 17
- 238000006243 chemical reaction Methods 0.000 description 14
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 12
- 239000000463 material Substances 0.000 description 12
- 239000002904 solvent Substances 0.000 description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 12
- 239000004971 Cross linker Substances 0.000 description 11
- 239000007787 solid Substances 0.000 description 11
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 9
- 239000000178 monomer Substances 0.000 description 9
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 8
- 230000003213 activating effect Effects 0.000 description 8
- 125000003118 aryl group Chemical group 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 8
- 125000004432 carbon atom Chemical group C* 0.000 description 8
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 8
- 125000001624 naphthyl group Chemical group 0.000 description 8
- 238000003786 synthesis reaction Methods 0.000 description 8
- 125000000217 alkyl group Chemical group 0.000 description 7
- 239000002585 base Substances 0.000 description 7
- 239000011230 binding agent Substances 0.000 description 7
- JESXATFQYMPTNL-UHFFFAOYSA-N 2-ethenylphenol Chemical group OC1=CC=CC=C1C=C JESXATFQYMPTNL-UHFFFAOYSA-N 0.000 description 6
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 6
- 229920000877 Melamine resin Polymers 0.000 description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 239000000654 additive Substances 0.000 description 6
- 150000002148 esters Chemical class 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 description 6
- 229920003270 Cymel® Polymers 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 125000005250 alkyl acrylate group Chemical group 0.000 description 5
- 150000001412 amines Chemical class 0.000 description 5
- 238000004132 cross linking Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 5
- 239000003921 oil Substances 0.000 description 5
- 229920005862 polyol Polymers 0.000 description 5
- 150000003077 polyols Chemical class 0.000 description 5
- GZVHEAJQGPRDLQ-UHFFFAOYSA-N 6-phenyl-1,3,5-triazine-2,4-diamine Chemical compound NC1=NC(N)=NC(C=2C=CC=CC=2)=N1 GZVHEAJQGPRDLQ-UHFFFAOYSA-N 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 4
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 4
- 150000001454 anthracenes Chemical class 0.000 description 4
- 239000006117 anti-reflective coating Substances 0.000 description 4
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 4
- 125000001153 fluoro group Chemical group F* 0.000 description 4
- 238000003384 imaging method Methods 0.000 description 4
- 229920001568 phenolic resin Polymers 0.000 description 4
- 239000005011 phenolic resin Substances 0.000 description 4
- 238000006116 polymerization reaction Methods 0.000 description 4
- 238000006467 substitution reaction Methods 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Natural products OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- DHKHKXVYLBGOIT-UHFFFAOYSA-N acetaldehyde Diethyl Acetal Natural products CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 description 3
- 150000001241 acetals Chemical class 0.000 description 3
- 150000008065 acid anhydrides Chemical group 0.000 description 3
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Natural products C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 3
- 239000003153 chemical reaction reagent Substances 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 229920001577 copolymer Polymers 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 125000000524 functional group Chemical group 0.000 description 3
- VPVSTMAPERLKKM-UHFFFAOYSA-N glycoluril Chemical compound N1C(=O)NC2NC(=O)NC21 VPVSTMAPERLKKM-UHFFFAOYSA-N 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 239000004615 ingredient Substances 0.000 description 3
- 238000004377 microelectronic Methods 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical class OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 3
- 229920006009 resin backbone Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 3
- GQRTVVANIGOXRF-UHFFFAOYSA-N (2-methyl-1-adamantyl) prop-2-enoate Chemical compound C1C(C2)CC3CC1C(C)C2(OC(=O)C=C)C3 GQRTVVANIGOXRF-UHFFFAOYSA-N 0.000 description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 2
- XLLIQLLCWZCATF-UHFFFAOYSA-N 2-methoxyethyl acetate Chemical compound COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 2
- CJYIWYPDACFXDQ-UHFFFAOYSA-N 3,3-dimethylbutanoic acid 5-fluoro-1H-pyrimidine-2,4-dione Chemical compound CC(C)(C)CC(=O)O.C1=C(C(=O)NC(=O)N1)F CJYIWYPDACFXDQ-UHFFFAOYSA-N 0.000 description 2
- OFNISBHGPNMTMS-UHFFFAOYSA-N 3-methylideneoxolane-2,5-dione Chemical group C=C1CC(=O)OC1=O OFNISBHGPNMTMS-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical group CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- NIQCNGHVCWTJSM-UHFFFAOYSA-N Dimethyl phthalate Chemical compound COC(=O)C1=CC=CC=C1C(=O)OC NIQCNGHVCWTJSM-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- BZLVMXJERCGZMT-UHFFFAOYSA-N Methyl tert-butyl ether Chemical compound COC(C)(C)C BZLVMXJERCGZMT-UHFFFAOYSA-N 0.000 description 2
- XYVQFUJDGOBPQI-UHFFFAOYSA-N Methyl-2-hydoxyisobutyric acid Chemical compound COC(=O)C(C)(C)O XYVQFUJDGOBPQI-UHFFFAOYSA-N 0.000 description 2
- JGFZNNIVVJXRND-UHFFFAOYSA-N N,N-Diisopropylethylamine (DIPEA) Chemical compound CCN(C(C)C)C(C)C JGFZNNIVVJXRND-UHFFFAOYSA-N 0.000 description 2
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- ORILYTVJVMAKLC-UHFFFAOYSA-N adamantane Chemical group C1C(C2)CC3CC1CC2C3 ORILYTVJVMAKLC-UHFFFAOYSA-N 0.000 description 2
- 125000005073 adamantyl group Chemical group C12(CC3CC(CC(C1)C3)C2)* 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical compound COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- FLJPGEWQYJVDPF-UHFFFAOYSA-L caesium sulfate Chemical compound [Cs+].[Cs+].[O-]S([O-])(=O)=O FLJPGEWQYJVDPF-UHFFFAOYSA-L 0.000 description 2
- 239000004202 carbamide Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 125000001309 chloro group Chemical group Cl* 0.000 description 2
- FLKPEMZONWLCSK-UHFFFAOYSA-N diethyl phthalate Chemical compound CCOC(=O)C1=CC=CC=C1C(=O)OCC FLKPEMZONWLCSK-UHFFFAOYSA-N 0.000 description 2
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 2
- 150000002009 diols Chemical class 0.000 description 2
- 239000000975 dye Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000005227 gel permeation chromatography Methods 0.000 description 2
- 125000005843 halogen group Chemical group 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 238000000671 immersion lithography Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 2
- 125000003518 norbornenyl group Chemical class C12(C=CC(CC1)C2)* 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229920001225 polyester resin Polymers 0.000 description 2
- 239000004645 polyester resin Substances 0.000 description 2
- YPFDHNVEDLHUCE-UHFFFAOYSA-N propane-1,3-diol Chemical compound OCCCO YPFDHNVEDLHUCE-UHFFFAOYSA-N 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 239000011541 reaction mixture Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052938 sodium sulfate Inorganic materials 0.000 description 2
- 235000011152 sodium sulphate Nutrition 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- BNWCETAHAJSBFG-UHFFFAOYSA-N tert-butyl 2-bromoacetate Chemical compound CC(C)(C)OC(=O)CBr BNWCETAHAJSBFG-UHFFFAOYSA-N 0.000 description 2
- SJMYWORNLPSJQO-UHFFFAOYSA-N tert-butyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC(C)(C)C SJMYWORNLPSJQO-UHFFFAOYSA-N 0.000 description 2
- ISXSCDLOGDJUNJ-UHFFFAOYSA-N tert-butyl prop-2-enoate Chemical compound CC(C)(C)OC(=O)C=C ISXSCDLOGDJUNJ-UHFFFAOYSA-N 0.000 description 2
- GCIYMCNGLUNWNR-UHFFFAOYSA-N (2,4-dinitrophenyl)methyl 4-methylbenzenesulfonate Chemical compound C1=CC(C)=CC=C1S(=O)(=O)OCC1=CC=C([N+]([O-])=O)C=C1[N+]([O-])=O GCIYMCNGLUNWNR-UHFFFAOYSA-N 0.000 description 1
- MCJPJAJHPRCILL-UHFFFAOYSA-N (2,6-dinitrophenyl)methyl 4-methylbenzenesulfonate Chemical class C1=CC(C)=CC=C1S(=O)(=O)OCC1=C([N+]([O-])=O)C=CC=C1[N+]([O-])=O MCJPJAJHPRCILL-UHFFFAOYSA-N 0.000 description 1
- MCVVDMSWCQUKEV-UHFFFAOYSA-N (2-nitrophenyl)methyl 4-methylbenzenesulfonate Chemical compound C1=CC(C)=CC=C1S(=O)(=O)OCC1=CC=CC=C1[N+]([O-])=O MCVVDMSWCQUKEV-UHFFFAOYSA-N 0.000 description 1
- MSLTZKLJPHUCPU-WNQIDUERSA-M (2s)-2-hydroxypropanoate;tetrabutylazanium Chemical compound C[C@H](O)C([O-])=O.CCCC[N+](CCCC)(CCCC)CCCC MSLTZKLJPHUCPU-WNQIDUERSA-M 0.000 description 1
- 125000000027 (C1-C10) alkoxy group Chemical group 0.000 description 1
- LJHFIVQEAFAURQ-ZPUQHVIOSA-N (NE)-N-[(2E)-2-hydroxyiminoethylidene]hydroxylamine Chemical class O\N=C\C=N\O LJHFIVQEAFAURQ-ZPUQHVIOSA-N 0.000 description 1
- DSSYKIVIOFKYAU-XCBNKYQSSA-N (R)-camphor Chemical group C1C[C@@]2(C)C(=O)C[C@@H]1C2(C)C DSSYKIVIOFKYAU-XCBNKYQSSA-N 0.000 description 1
- 0 *C(C(N1*)=O)=CN(*)C1=O Chemical compound *C(C(N1*)=O)=CN(*)C1=O 0.000 description 1
- JGTNAGYHADQMCM-UHFFFAOYSA-M 1,1,2,2,3,3,4,4,4-nonafluorobutane-1-sulfonate Chemical compound [O-]S(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F JGTNAGYHADQMCM-UHFFFAOYSA-M 0.000 description 1
- XGQJGMGAMHFMAO-UHFFFAOYSA-N 1,3,4,6-tetrakis(methoxymethyl)-3a,6a-dihydroimidazo[4,5-d]imidazole-2,5-dione Chemical compound COCN1C(=O)N(COC)C2C1N(COC)C(=O)N2COC XGQJGMGAMHFMAO-UHFFFAOYSA-N 0.000 description 1
- BPXVHIRIPLPOPT-UHFFFAOYSA-N 1,3,5-tris(2-hydroxyethyl)-1,3,5-triazinane-2,4,6-trione Chemical compound OCCN1C(=O)N(CCO)C(=O)N(CCO)C1=O BPXVHIRIPLPOPT-UHFFFAOYSA-N 0.000 description 1
- GYQQFWWMZYBCIB-UHFFFAOYSA-N 1-[diazo-(4-methylphenyl)sulfonylmethyl]sulfonyl-4-methylbenzene Chemical compound C1=CC(C)=CC=C1S(=O)(=O)C(=[N+]=[N-])S(=O)(=O)C1=CC=C(C)C=C1 GYQQFWWMZYBCIB-UHFFFAOYSA-N 0.000 description 1
- HMNZROFMBSUMAB-UHFFFAOYSA-N 1-ethoxybutan-1-ol Chemical group CCCC(O)OCC HMNZROFMBSUMAB-UHFFFAOYSA-N 0.000 description 1
- JLBXCKSMESLGTJ-UHFFFAOYSA-N 1-ethoxypropan-1-ol Chemical group CCOC(O)CC JLBXCKSMESLGTJ-UHFFFAOYSA-N 0.000 description 1
- HHVCCCZZVQMAMT-UHFFFAOYSA-N 1-hydroxy-3-phenylpyrrole-2,5-dione Chemical compound O=C1N(O)C(=O)C=C1C1=CC=CC=C1 HHVCCCZZVQMAMT-UHFFFAOYSA-N 0.000 description 1
- FFKFRQVYUILJCW-UHFFFAOYSA-N 1-hydroxypyrrolidine-2,5-dione;methanesulfonic acid Chemical class CS(O)(=O)=O.ON1C(=O)CCC1=O FFKFRQVYUILJCW-UHFFFAOYSA-N 0.000 description 1
- QPAWHGVDCJWYRJ-UHFFFAOYSA-N 1-hydroxypyrrolidine-2,5-dione;trifluoromethanesulfonic acid Chemical class ON1C(=O)CCC1=O.OS(=O)(=O)C(F)(F)F QPAWHGVDCJWYRJ-UHFFFAOYSA-N 0.000 description 1
- LHENQXAPVKABON-UHFFFAOYSA-N 1-methoxypropan-1-ol Chemical group CCC(O)OC LHENQXAPVKABON-UHFFFAOYSA-N 0.000 description 1
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 1
- DRLRGHZJOQGQEC-UHFFFAOYSA-N 2-(2-methoxypropoxy)propyl acetate Chemical compound COC(C)COC(C)COC(C)=O DRLRGHZJOQGQEC-UHFFFAOYSA-N 0.000 description 1
- FVNIIPIYHHEXQA-UHFFFAOYSA-N 2-(4-methoxynaphthalen-1-yl)-4,6-bis(trichloromethyl)-1,3,5-triazine Chemical compound C12=CC=CC=C2C(OC)=CC=C1C1=NC(C(Cl)(Cl)Cl)=NC(C(Cl)(Cl)Cl)=N1 FVNIIPIYHHEXQA-UHFFFAOYSA-N 0.000 description 1
- QRHHZFRCJDAUNA-UHFFFAOYSA-N 2-(4-methoxyphenyl)-4,6-bis(trichloromethyl)-1,3,5-triazine Chemical compound C1=CC(OC)=CC=C1C1=NC(C(Cl)(Cl)Cl)=NC(C(Cl)(Cl)Cl)=N1 QRHHZFRCJDAUNA-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- KBKNKFIRGXQLDB-UHFFFAOYSA-N 2-fluoroethenylbenzene Chemical class FC=CC1=CC=CC=C1 KBKNKFIRGXQLDB-UHFFFAOYSA-N 0.000 description 1
- BWLBGMIXKSTLSX-UHFFFAOYSA-M 2-hydroxyisobutyrate Chemical compound CC(C)(O)C([O-])=O BWLBGMIXKSTLSX-UHFFFAOYSA-M 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- IIXCWLRHCUOAFI-UHFFFAOYSA-N 3,3-dimethylbutanoic acid 5-nitro-1H-pyrimidine-2,4-dione Chemical compound CC(C)(C)CC(=O)O.C1=C(C(=O)NC(=O)N1)[N+](=O)[O-] IIXCWLRHCUOAFI-UHFFFAOYSA-N 0.000 description 1
- QDFXRVAOBHEBGJ-UHFFFAOYSA-N 3-(cyclononen-1-yl)-4,5,6,7,8,9-hexahydro-1h-diazonine Chemical compound C1CCCCCCC=C1C1=NNCCCCCC1 QDFXRVAOBHEBGJ-UHFFFAOYSA-N 0.000 description 1
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- JSGVZVOGOQILFM-UHFFFAOYSA-N 3-methoxy-1-butanol Chemical group COC(C)CCO JSGVZVOGOQILFM-UHFFFAOYSA-N 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/322—Aqueous alkaline compositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31786—Of polyester [e.g., alkyd, etc.]
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Description
さらなる形態においては、本明細書において開示される反応したウラシル型モノマーを含む樹脂が提供される。
本発明のコーティング組成物の好ましい樹脂は1以上のポリエステル連鎖を含むことができる。好ましい樹脂はウラシル基に加えて、シアヌラート基のような基も含むことができる。
さらなる形態においては、本明細書に開示された樹脂を含む反射防止組成物が提供される。下地反射防止コーティング組成物の好ましい追加の成分には、架橋性官能基もしくは材料が挙げられる。好ましい下地コーティング組成物は、マイクロエレクトロニクスウェハのような所望の基体へのスピンオン適用のための有機溶媒組成物として配合される。
本発明者は、上塗りフォトレジスト層と併用されるのに特に有用な新規の有機コーティング組成物を提供する。本発明の好ましいコーティング組成物はスピンコーティングにより適用されることができ(スピンオン組成物)、溶媒組成物として配合されうる。本発明のコーティング組成物は、上塗りフォトレジストのための反射防止組成物として、および/または上塗りフォトレジスト組成物塗膜層のための平坦化またはビアフィル組成物として特に有用である。
各R1は同じであるかまたは異なっており、かつ水素、化学結合(例えば、ウラシル部分が樹脂鎖のメンバーとして連結されている場合)、または非水素置換基、例えば、Rについて上で特定したような置換基を表しうる。
上述のように、好ましい樹脂には、1以上のウラシル部分、例えば上記式(I)の構造の基を含む樹脂が挙げられる。適切には、この1以上のウラシル部分は樹脂骨格に対してペンダントであることができ、あるいは、例えば、ウラシル基の各環窒素で連結される樹脂骨格連鎖であってもよい。
ポジ型およびネガ型光酸発生組成物のような様々なフォトレジスト組成物が本発明のコーティング組成物と共に使用されうる。本発明の反射防止組成物と共に使用されるフォトレジストは、典型的には、樹脂バインダーおよび光活性成分、典型的には光酸発生剤化合物を含む。好ましくは、フォトレジスト樹脂バインダーは、像形成されるレジスト組成物に水性アルカリ現像可能性を付与する官能基を有する。
1)248nmでの像形成に特に好適な化学増幅ポジ型レジストを提供できる酸不安定基を含むフェノール系樹脂。この種の特に好ましい樹脂には以下のものが挙げられる:i)ビニルフェノールおよびアクリル酸アルキルの重合単位を含むポリマーであって、重合されたアクリル酸アルキル単位が光酸の存在下でデブロッキング反応を受けうるポリマー。光酸誘起デブロッキング反応を受けうる代表的なアクリル酸アルキルには、例えば、アクリル酸t−ブチル、メタクリル酸t−ブチル、アクリル酸メチルアダマンチル、メタクリル酸メチルアダマンチル、および光酸誘起反応を受けうる他の非環式アルキルおよび脂環式アクリラートが挙げられ、例えば、米国特許第6,042,997号および第5,492,793号におけるポリマーが挙げられる;ii)ヒドロキシまたはカルボキシ環置換基を含まない、場合によって置換されたビニルフェニル(例えば、スチレン)、ビニルフェノール、および上記ポリマーi)について記載されるデブロッキング基のようなアクリル酸アルキルの重合単位を含むポリマー、例えば、米国特許第6,042,997号に記載されるポリマー;並びに、iii)光酸と反応できるアセタールまたはケタール部分を含む繰り返し単位を含み、および場合によってフェニルまたはフェノール性基のような芳香族繰り返し単位を含むポリマー;このようなポリマーは米国特許第5,929,176号および第6,090,526号に記載されている:
2)フェニルまたは他の芳香族基を実質的にまたは完全に含まず、サブ200nmの波長、例えば、193nmでの像形成に特に好適な化学増幅ポジ型レジストを提供できる樹脂。特に好ましいこの種の樹脂には次のものが挙げられる:i)非芳香族環式オレフィン(環内二重結合)、例えば、場合によって置換されたノルボルネンの重合単位を含むポリマー、例えば、米国特許第5,843,624号および第6,048,664号に記載されたポリマー;ii)アクリル酸アルキル単位、例えば、アクリル酸t−ブチル、メタクリル酸t−ブチル、アクリル酸メチルアダマンチル、メタクリル酸メチルアダマンチル、および他の非環式アルキルおよび脂環式アクリラートを含むポリマー;このようなポリマーは米国特許第6,057,083号;欧州特許出願公開第EP01008913A1号およびEP00930542A1号;および米国特許出願第09/143,462号に記載されている;並びに、iii)重合された酸無水物単位、特に重合された無水マレイン酸および/または無水イタコン酸単位を含むポリマー、例えば、欧州特許出願公開第EP01008913A1号および米国特許第6,048,662号に開示されるポリマー:
3)ヘテロ原子、特に酸素および/または硫黄を含む繰り返し単位(ただし、酸無水物は除く、すなわち、この単位はケト環原子を含まない)を含み、かつ望ましくは実質的にまたは完全に芳香族単位を含まない樹脂。好ましくは、ヘテロ脂環式単位はこの樹脂骨格に縮合されており、さらに好ましいのは、樹脂が、ノルボルネン基の重合により提供されるような縮合炭素脂環式単位、および/または無水マレイン酸もしくは無水イタコン酸の重合により提供されるような酸無水物単位を含むものである。このような樹脂は国際出願第PCT/US01/14914号および米国特許出願番号第09/567,634号に開示されている:
4)フッ素置換を含む樹脂(フルオロポリマー)、例えば、テトラフルオロエチレン、フッ素化芳香族群、例えば、フルオロ−スチレン化合物などの重合により提供されうる樹脂。このような樹脂の例は、例えば、国際出願第PCT/US99/21912号に開示されている。
使用において、本発明のコーティング組成物は、スピンコーティングのような様々な方法のいずれかによって、コーティング層として基体に適用される。コーティング組成物は一般に、約0.02〜0.5μmの乾燥層厚で、好ましくは、約0.04〜0.20μmの乾燥層厚で基体上に適用される。基体は好適には、フォトレジストに関連する方法において使用されるあらゆる基体である。例えば、基体はケイ素、二酸化ケイ素、またはアルミニウム−酸化アルミニウムマイクロエレクトロニクスウェハであることができる。ガリウムヒ素、炭化ケイ素、セラミック、石英または銅基体も使用されうる。液晶ディスプレイまたは他のフラットパネルディスプレイ用途のための基体、例えば、ガラス基体、インジウムスズ酸化物被覆基体なども好適に使用される。光学デバイスおよび光電子デバイス(例えば、導波路)のための基体も使用されうる。
3.237gの実施例3からのポリマー、5.768gのテトラメトキシメチルグリコールウリル、0.371gのアンモニア化されたパラ−トルエンスルホン酸、および490.624gのメチル−2−ヒドロキシイソブチラートを含む反射防止キャスティング溶液が混合され、0.2μテフロン(登録商標)フィルタでろ過される。
この配合されたウラシル樹脂含有コーティング組成物がシリコンマイクロチップウェハ上にスピンコートされ、そして210℃で60秒間真空ホットプレート上で硬化させられて、硬化塗膜層を提供する。
Claims (18)
- (a)1以上のウラシル部分を含む成分をコーティング組成物が含む、基体上の前記コーティング組成物の層、および
(b)前記コーティング組成物層上のフォトレジスト層、
を含むコーティングされた基体。 - 1以上のウラシル部分を含む成分が樹脂である請求項1または2に記載の基体。
- 前記樹脂がポリエステル連鎖を含む請求項3に記載の基体。
- 前記樹脂が1以上のシアヌラート基をさらに含む請求項3または4に記載の基体。
- 前記コーティング組成物がフェニルもしくはアントラセン基を含む、請求項1〜5のいずれか1項に記載の基体。
- (a)1以上のウラシル部分を含む成分を含むコーティング組成物を基体上に適用し;
(b)前記コーティング組成物層上にフォトレジスト組成物を適用し;並びに
(c)前記フォトレジスト層を露光し、現像して、レジストレリーフ像を提供する;
ことを含む、フォトレジストレリーフ像を形成する方法。 - 1以上のウラシル部分を含む成分が樹脂である請求項7または8に記載の方法。
- 前記樹脂がポリエステル連鎖を含む請求項9に記載の方法。
- フェニルもしくはアントラセン基を含む成分を前記コーティング組成物が含む、請求項7〜10のいずれか1項に記載の方法。
- フォトレジストが193nm放射線で露光される、請求項7〜11のいずれか1項に記載の方法。
- 適用された前記コーティング組成物が、フォトレジスト組成物を適用する前に架橋される、請求項7〜12のいずれか1項に記載の方法。
- 上塗りフォトレジスト組成物と共に使用するための反射防止組成物であって、1以上のウラシル連結を含む樹脂を含む反射防止組成物。
- 前記樹脂がポリエステル連鎖を含む請求項14または15に記載の反射防止組成物。
- 前記樹脂がフェニル基を含む、請求項14〜16のいずれか1項に記載の反射防止組成物。
- 組成物が架橋剤成分を含む、請求項14〜17のいずれか1項に記載の反射防止組成物。
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EP (1) | EP2472329B1 (ja) |
JP (1) | JP5945416B2 (ja) |
KR (1) | KR101862044B1 (ja) |
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Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW591341B (en) * | 2001-09-26 | 2004-06-11 | Shipley Co Llc | Coating compositions for use with an overcoated photoresist |
JP5112733B2 (ja) | 2006-04-11 | 2013-01-09 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | フォトリソグラフィ用コーティング組成物 |
EP2472329B1 (en) * | 2010-12-31 | 2013-06-05 | Rohm and Haas Electronic Materials LLC | Coating compositions for use with an overcoated photoresist |
US11092894B2 (en) | 2014-12-31 | 2021-08-17 | Rohm And Haas Electronic Materials Korea Ltd. | Method for forming pattern using anti-reflective coating composition comprising photoacid generator |
US10203602B2 (en) | 2016-09-30 | 2019-02-12 | Rohm And Haas Electronic Materials Korea Ltd. | Coating compositions for use with an overcoated photoresist |
US20180364575A1 (en) * | 2017-06-15 | 2018-12-20 | Rohm And Haas Electronic Materials Korea Ltd. | Coating compositions for use with an overcoated photoresist |
Family Cites Families (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4491628A (en) | 1982-08-23 | 1985-01-01 | International Business Machines Corporation | Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone |
DE3584316D1 (de) | 1984-06-01 | 1991-11-14 | Rohm & Haas | Lichtempfindliche beschichtungszusammensetzung, aus diesem hergestellte thermisch stabile beschichtungen und verfahren zur herstellung von thermisch stabilen polymerbildern. |
CA1307695C (en) | 1986-01-13 | 1992-09-22 | Wayne Edmund Feely | Photosensitive compounds and thermally stable and aqueous developablenegative images |
US4968581A (en) | 1986-02-24 | 1990-11-06 | Hoechst Celanese Corporation | High resolution photoresist of imide containing polymers |
US4810613A (en) | 1987-05-22 | 1989-03-07 | Hoechst Celanese Corporation | Blocked monomer and polymers therefrom for use as photoresists |
DE3721741A1 (de) | 1987-07-01 | 1989-01-12 | Basf Ag | Strahlungsempfindliches gemisch fuer lichtempfindliche beschichtungsmaterialien |
US5128232A (en) | 1989-05-22 | 1992-07-07 | Shiply Company Inc. | Photoresist composition with copolymer binder having a major proportion of phenolic units and a minor proportion of non-aromatic cyclic alcoholic units |
US5221482A (en) | 1989-10-16 | 1993-06-22 | Daicel Chemical Industries, Ltd. | Polyparabanic acid membrane for selective separation |
US6165697A (en) | 1991-11-15 | 2000-12-26 | Shipley Company, L.L.C. | Antihalation compositions |
DE69322946T2 (de) | 1992-11-03 | 1999-08-12 | Ibm | Photolackzusammensetzung |
US5843624A (en) | 1996-03-08 | 1998-12-01 | Lucent Technologies Inc. | Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material |
US5861231A (en) | 1996-06-11 | 1999-01-19 | Shipley Company, L.L.C. | Copolymers and photoresist compositions comprising copolymer resin binder component |
US6090526A (en) | 1996-09-13 | 2000-07-18 | Shipley Company, L.L.C. | Polymers and photoresist compositions |
KR100220951B1 (ko) | 1996-12-20 | 1999-09-15 | 김영환 | 비닐 4-테트라히드로피라닐옥시벤잘-비닐 4-히드록시벤잘-비닐 테트라히드로피라닐에테르-비닐 아세테이트 공중합체, 비닐 4-테트라히드로피라닐옥시벤잘-비닐 테트라히드로피라닐에테르-비닐 아세테이트 공중합체 및 그들의 제조방법 |
US5939236A (en) | 1997-02-07 | 1999-08-17 | Shipley Company, L.L.C. | Antireflective coating compositions comprising photoacid generators |
US5929173A (en) | 1997-05-12 | 1999-07-27 | The Procter & Gamble Company | Toughened grafted polymers |
US6057083A (en) | 1997-11-04 | 2000-05-02 | Shipley Company, L.L.C. | Polymers and photoresist compositions |
US6165674A (en) | 1998-01-15 | 2000-12-26 | Shipley Company, L.L.C. | Polymers and photoresist compositions for short wavelength imaging |
KR20010023776A (ko) * | 1998-07-10 | 2001-03-26 | 잔디해머,한스루돌프하우스 | 저면 반사 방지막용 조성물 및 이에 사용하기 위한 신규중합체 염료 |
US6136501A (en) | 1998-08-28 | 2000-10-24 | Shipley Company, L.L.C. | Polymers and photoresist compositions comprising same |
IL141803A0 (en) | 1998-09-23 | 2002-03-10 | Du Pont | Photoresists, polymers and processes for microlithography |
KR20000047909A (ko) | 1998-12-10 | 2000-07-25 | 마티네즈 길러모 | 이타콘산 무수물 중합체 및 이를 함유하는 포토레지스트조성물 |
US6048662A (en) | 1998-12-15 | 2000-04-11 | Bruhnke; John D. | Antireflective coatings comprising poly(oxyalkylene) colorants |
US6048664A (en) | 1999-03-12 | 2000-04-11 | Lucent Technologies, Inc. | Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material |
GB9918023D0 (en) | 1999-07-30 | 1999-09-29 | Unilever Plc | Skin care composition |
US6306554B1 (en) | 2000-05-09 | 2001-10-23 | Shipley Company, L.L.C. | Polymers containing oxygen and sulfur alicyclic units and photoresist compositions comprising same |
TW591341B (en) | 2001-09-26 | 2004-06-11 | Shipley Co Llc | Coating compositions for use with an overcoated photoresist |
JP4247643B2 (ja) | 2004-03-16 | 2009-04-02 | 日産化学工業株式会社 | 硫黄原子を含有する反射防止膜 |
US7790356B2 (en) * | 2004-04-09 | 2010-09-07 | Nissan Chemical Industries, Ltd. | Condensation type polymer-containing anti-reflective coating for semiconductor |
WO2006040921A1 (ja) * | 2004-10-12 | 2006-04-20 | Nissan Chemical Industries, Ltd. | 硫黄原子を含むリソグラフィー用反射防止膜形成組成物 |
WO2006066263A1 (en) | 2004-12-17 | 2006-06-22 | Entelos, Inc. | Assessing insulin resistance using biomarkers |
SG175580A1 (en) | 2006-10-03 | 2011-11-28 | Radius Health Inc | Method of drug delivery for bone anabolic protein |
JP4993139B2 (ja) * | 2007-09-28 | 2012-08-08 | 信越化学工業株式会社 | 反射防止膜形成材料、反射防止膜及びこれを用いたパターン形成方法 |
US8329387B2 (en) * | 2008-07-08 | 2012-12-11 | Az Electronic Materials Usa Corp. | Antireflective coating compositions |
US10437150B2 (en) | 2008-11-27 | 2019-10-08 | Nissan Chemical Industries, Ltd. | Composition for forming resist underlayer film with reduced outgassing |
EP2472329B1 (en) * | 2010-12-31 | 2013-06-05 | Rohm and Haas Electronic Materials LLC | Coating compositions for use with an overcoated photoresist |
US9921912B1 (en) | 2015-09-30 | 2018-03-20 | EMC IP Holding Company LLC | Using spare disk drives to overprovision raid groups |
-
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- 2011-12-31 CN CN201110463317.5A patent/CN102621813B/zh active Active
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2012
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- 2012-01-04 JP JP2012000226A patent/JP5945416B2/ja active Active
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2015
- 2015-03-02 US US14/635,553 patent/US10481494B1/en active Active
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2019
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TWI454849B (zh) | 2014-10-01 |
JP2012189988A (ja) | 2012-10-04 |
US10365562B2 (en) | 2019-07-30 |
TW201241570A (en) | 2012-10-16 |
CN102621813A (zh) | 2012-08-01 |
US10481494B1 (en) | 2019-11-19 |
US8968981B2 (en) | 2015-03-03 |
EP2472329A1 (en) | 2012-07-04 |
US20130004893A1 (en) | 2013-01-03 |
CN102621813B (zh) | 2016-08-31 |
EP2472329B1 (en) | 2013-06-05 |
KR101862044B1 (ko) | 2018-05-29 |
KR20120078670A (ko) | 2012-07-10 |
US20190354015A1 (en) | 2019-11-21 |
US20130004901A1 (en) | 2013-01-03 |
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