JP5935352B2 - Manufacturing method of physical quantity sensor having SON structure. - Google Patents
Manufacturing method of physical quantity sensor having SON structure. Download PDFInfo
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
- G01L9/0045—Diaphragm associated with a buried cavity
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
- G01L9/0048—Details about the mounting of the diaphragm to its support or about the diaphragm edges, e.g. notches, round shapes for stress relief
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/12—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
- G01P15/123—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance by piezo-resistive elements, e.g. semiconductor strain gauges
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
- G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
- G01P2015/084—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass the mass being suspended at more than one of its sides, e.g. membrane-type suspension, so as to permit multi-axis movement of the mass
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/925—Bridge rectifier module
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- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Description
この発明は、圧力センサや加速度センサなどのＳＯＮ構造を有する物理量センサおよびその製造方法に関する。 The present invention relates to a physical quantity sensor having a SON structure such as a pressure sensor and an acceleration sensor, and a manufacturing method thereof.
図７は、一般的な圧力センサ６００の全体の模式図である。圧力センサ６００は、パッケージ８０と、このパッケージ８０内の凹部８０ａに固定される半導体チップ８５と、半導体チップ８５と図示しない外部回路をボンディングワイヤ８２を介して接続し、パッケージ８０の一部である外部導出端子８１と、半導体チップ８５を被覆するゲル８３を備える。また、半導体チップ８５とパッケージ８０は接着剤８４で固定される。流体などの圧力（被測定圧力Ｆ）はゲル８３を介して半導体チップ８５に印加されて圧力測定が行なわれる。 FIG. 7 is a schematic diagram of an entire general pressure sensor 600. The pressure sensor 600 is a part of the package 80, which connects the package 80, the semiconductor chip 85 fixed to the recess 80 a in the package 80, the semiconductor chip 85 and an external circuit (not shown) via the bonding wire 82. An external lead-out terminal 81 and a gel 83 covering the semiconductor chip 85 are provided. The semiconductor chip 85 and the package 80 are fixed with an adhesive 84. Pressure such as fluid (measured pressure F) is applied to the semiconductor chip 85 via the gel 83 to perform pressure measurement.
また、特許文献１，３では、ダイアフラムの周囲に溝を形成し、応力のダイアフラムへの伝達を制御することが記載されている。
また、特許文献２では、円形状のダイアフラム１を支持させたフレームに窪みを形成し、また窪みからフレームの端部にわたる取出し部７を凹設する。窪み６の外周域のフレーム上面には取出し部に切れ目を有する円環状の封止溝を凹設する。封止溝及び取出し部には上端面がフレームより高くなった封止部をフッ素系樹脂などにより形成する。このフレーム上面にカバー３を重ね、陽極接合法により接合して圧力センサを作成する。カバーの内面に設けた接続配線は封止部に埋入され、封止部とカバーとは隙間なく圧着される。これによって、圧力室の気密性を高めることができることがすることが記載されている。この発明ではダイアフラムの周囲に形成される封止溝は環状に形成されている。
Patent Documents 1 and 3 describe that a groove is formed around the diaphragm to control transmission of stress to the diaphragm.
Moreover, in patent document 2, a hollow is formed in the flame | frame which supported the circular diaphragm 1, and the extraction part 7 ranging from a hollow to the edge part of a flame | frame is recessedly provided. An annular sealing groove having a cut in the take-out portion is formed in the upper surface of the frame in the outer peripheral area of the recess 6. In the sealing groove and the extraction portion, a sealing portion whose upper end surface is higher than the frame is formed of a fluorine-based resin or the like. The cover 3 is overlapped on the upper surface of the frame and bonded by an anodic bonding method to create a pressure sensor. The connection wiring provided on the inner surface of the cover is embedded in the sealing portion, and the sealing portion and the cover are crimped without a gap. It is described that the airtightness of the pressure chamber can be increased thereby. In the present invention, the sealing groove formed around the diaphragm is formed in an annular shape.
また、特許文献４では、シリコン等の半導体のセンサ素子のダイヤフラムの周囲に、厚肉部を介して、このダイヤフラムを囲むように薄肉部を一体に形成する。薄肉部の外側に、センサ素子の脚部が形成され、このセンサ素子が取り付けられる取付面に，脚部が接合されている。こうすることで、脚部からの応力が薄肉部に集中してダイアフラムに伝達されず、高精度な圧力センサにできることが記載されている。 Further, in Patent Document 4, a thin portion is integrally formed around a diaphragm of a semiconductor sensor element such as silicon so as to surround the diaphragm via a thick portion. A leg portion of the sensor element is formed outside the thin portion, and the leg portion is joined to a mounting surface to which the sensor element is attached. By doing so, it is described that the stress from the leg portion concentrates on the thin wall portion and is not transmitted to the diaphragm, and can be a highly accurate pressure sensor.
また、特許文献５では、ＳＯＮ構造を用いて、半導体基板表面にダイアフラム等の圧力検出部を形成するのと同時に基準圧力室を形成して、製造工程が簡略化でき、低コスト化が可能で、機械的強度が強く、高精度の測定が可能な半導体センサ及びその製造方法を実現できることが記載されている。 Further, in Patent Document 5, the manufacturing process can be simplified and the cost can be reduced by forming a reference pressure chamber at the same time as forming a pressure detection unit such as a diaphragm on the surface of the semiconductor substrate using the SON structure. In addition, it is described that a semiconductor sensor having a high mechanical strength and capable of measuring with high accuracy and a manufacturing method thereof can be realized.
また、特許文献６では、マイクロマシンセンサを製造する方法及びこの方法により製造されるセンサにおいて、半導体基板に複数の開口を設けることが提案される。これらの開口を半導体基板内に設けた後に熱処理が行われ、この熱処理では、基板の深部に設けられた中空室への開口が転移せしめたＳＯＮ構造で圧力センサを形成することが記載されている。 Patent Document 6 proposes a method of manufacturing a micromachine sensor and a sensor manufactured by this method, in which a plurality of openings are provided in a semiconductor substrate. It is described that after these openings are provided in the semiconductor substrate, heat treatment is performed, and in this heat treatment, the pressure sensor is formed with an SON structure in which the openings to the hollow chambers provided in the deep part of the substrate are transferred. .
また、特許文献７では、バンプを形成する圧力センサにおいて、応力緩和のために、バンプに対応する領域に空洞を形成することが記載されている。 Patent Document 7 describes that in a pressure sensor for forming a bump, a cavity is formed in a region corresponding to the bump for stress relaxation.
しかし、特許文献１〜４では、ダイアフラムはＳＯＮ構造で形成されていない。また、特許文献５,６ではＳＯＮ構造の外周部に応力緩和領域は形成されていない。さらに、特許文献７では、第２のＳＯＮ構造上に形成されるバンプからの機械的応力はダイアフラムに伝達するため、第２のＳＯＮ構造は応力緩和領域としての働きは小さい。 However, in Patent Documents 1 to 4, the diaphragm is not formed with the SON structure. In Patent Documents 5 and 6, no stress relaxation region is formed in the outer periphery of the SON structure. Further, in Patent Document 7, since the mechanical stress from the bump formed on the second SON structure is transmitted to the diaphragm, the second SON structure has a small function as a stress relaxation region.
前記の特許文献１〜７では、ダイアフラムをＳＯＮ構造で形成し、このダイアフラムの外周部に応力緩和領域となるトレンチ溝やＳＯＮ構造を設けて圧力センサの精度を高めることについては記載されていない。 In the above Patent Documents 1 to 7, there is no description about increasing the accuracy of the pressure sensor by forming a diaphragm with a SON structure and providing a trench groove or SON structure as a stress relaxation region on the outer periphery of the diaphragm.
この発明の目的は、前記の課題を解決して、ＳＯＮ構造のダイアフラムの外周部からの熱応力を緩和し、安価で高精度の物理量センサおよびその製造方法を提供することにある。 SUMMARY OF THE INVENTION An object of the present invention is to solve the above-described problems and to provide a low-cost and high-precision physical quantity sensor and a method for manufacturing the same, by relieving thermal stress from the outer peripheral portion of the SON structure diaphragm.
前記の目的を達成するために、特許請求の範囲の請求項１に記載の発明によれば、半導体基板の表面層に配置され基準圧力室となるＳＯＮ（ｓｉｌｉｃｏｎ Ｏｎ Ｎｏｔｈｉｎｇ）構造を構成する空洞と、該空洞上の前記ＳＯＮ構造を構成する半導体層からなるダイアフラムと、前記半導体基板の前記ダイアフラムの外周部に該ダイアフラムと離れて配置される圧力緩和領域と、前記ダイアフラムに配置されるホイートストンブリッジと、前記圧力緩和領域の外周部に配置される電子回路と、前記ホイートストンブリッジと前記電子回路を接続する接続配線とを具備し、
前記圧力緩和領域が、トレンチ溝であり、該トレンチ溝の平面形状が一部切れた箇所がある環状で、該一部切れた箇所上に前記ホイートストンブリッジと前記電子回路とを接続する前記接続配線を配置するＳＯＮ構造を有する物理量センサの製造方法において、
半導体ウェハの表面層にトレンチホール群と、該トレンチホール群の外周部に前記トレンチホール群と離して平面形状が一部切れた箇所がある前記環状のトレンチ溝を形成する工程と、
アニールを施して、前記トレンチホール群のトレンチホールを変形させて、一つの大きな空洞を形成しＳＯＮ構造とする工程と、
アニールを施して、前記トレンチ溝を開口が塞がらない程度に変形させる工程と、
前記空洞上のダイアフラムとなる半導体層にホイートストンブリッジを形成し、前記トレンチ溝の外周部に電子回路を形成し、前記ホイートンブリッジと前記電子回路を接続する配線を前記環状の一部切れた前記箇所上に形成する工程と、
を含む構成とする。
In order to achieve the above object, according to the first aspect of the present invention, a cavity that constitutes a SON (silicon on nothing) structure that is disposed in a surface layer of a semiconductor substrate and serves as a reference pressure chamber, A diaphragm made of a semiconductor layer constituting the SON structure on the cavity, a pressure relaxation region disposed on the outer peripheral portion of the diaphragm of the semiconductor substrate apart from the diaphragm, and a Wheatstone bridge disposed on the diaphragm. An electronic circuit disposed on the outer periphery of the pressure relaxation region, and a connection wiring connecting the Wheatstone bridge and the electronic circuit ,
The pressure relaxation region is a trench groove, and the connection wiring that connects the Wheatstone bridge and the electronic circuit on the part of the part where the planar shape of the trench groove is partly cut in an annular shape. In a manufacturing method of a physical quantity sensor having a SON structure in which
Forming a trench hole group in the surface layer of the semiconductor wafer, and forming the annular trench groove having a portion where the planar shape is partially cut away from the trench hole group on the outer periphery of the trench hole group;
Applying annealing to deform the trench holes of the trench hole group to form one large cavity to form a SON structure;
Annealing to deform the trench groove so that the opening is not blocked;
A Wheatstone bridge is formed in a semiconductor layer serving as a diaphragm on the cavity, an electronic circuit is formed in an outer peripheral portion of the trench groove, and a wiring for connecting the Wheaton bridge and the electronic circuit is partially cut off in the annular shape Forming on the location;
It is set as the structure containing .
また、特許請求の範囲の請求項２記載の発明によれば、請求項１に記載の発明において、前記トレンチホール群と前記トレンチ溝を同時に形成する構成とする。
According to the second aspect of the present invention, the trench hole group and the trench groove are formed at the same time in the first aspect.
また、特許請求の範囲の請求項３記載の発明によれば、半導体基板の表面層に配置され基準圧力室となるＳＯＮ（ｓｉｌｉｃｏｎ Ｏｎ Ｎｏｔｈｉｎｇ）構造を構成する空洞と、該空洞上の前記ＳＯＮ構造を構成する半導体層からなるダイアフラムと、前記半導体基板の前記ダイアフラムの外周部に該ダイアフラムと離れて配置される圧力緩和領域と、前記ダイアフラムに配置されるホイートストンブリッジと、前記圧力緩和領域の外周部に配置される電子回路と、前記ホイートストンブリッジと前記電子回路を接続する接続配線とを具備し、
前記圧力緩和領域が、前記ＳＯＮ構造を第１ＳＯＮ構造とし該第１ＳＯＮ構造の外周部に配置される平面形状が、環状もしくは一部切れた箇所がある環状の第２ＳＯＮ構造である物理量センサの製造方法において、
半導体ウェハの表面層に第１トレンチホール群と、該第１トレンチホール群の外周部に前記第１トレンチホール群と離して平面形状が環状もしくは一部切れた箇所がある環状の第２トレンチホール群を形成する工程と、
アニールを施して、前記第１トレンチホール群の第１トレンチホールおよび前記第２トレンチホール群の第２トレンチホールを変形させて、前記第１ＳＯＮ構造を構成する第１空洞および前記第２ＳＯＮ構造を構成する第２空洞をそれぞれ形成する工程と、
前記第１空洞上のダイアフラムとなる半導体層にホイートストンブリッジを形成し、前記第２空洞の外周部に電子回路を形成し、前記ホイートンブリッジと前記電子回路を接続する配線を前記第２空洞上もしくは前記第２空洞が切れた前記箇所上を横切って形成する工程と、
を含む構成とする。
According to the third aspect of the present invention, a cavity that constitutes a SON (silicon on nothing) structure that is disposed on a surface layer of a semiconductor substrate and serves as a reference pressure chamber, and the SON structure on the cavity. A diaphragm made of a semiconductor layer constituting the semiconductor substrate, a pressure relaxation region disposed on the outer peripheral portion of the diaphragm of the semiconductor substrate and spaced from the diaphragm, a Wheatstone bridge disposed on the diaphragm, and an outer peripheral portion of the pressure relaxation region An electronic circuit disposed on the wiring board, and a connection wiring connecting the Wheatstone bridge and the electronic circuit,
Method for manufacturing a physical quantity sensor in which the pressure relaxation region is an annular second SON structure in which the SON structure is the first SON structure and the planar shape disposed on the outer peripheral portion of the first SON structure is an annular or partially cut portion In
A first trench hole group on the surface layer of the semiconductor wafer, and an annular second trench hole in which the planar shape is annular or partially cut away from the first trench hole group on the outer periphery of the first trench hole group Forming a group;
Annealing is performed to deform the first trench hole of the first trench hole group and the second trench hole of the second trench hole group to form the first cavity and the second SON structure constituting the first SON structure Forming each second cavity to be
A Wheatstone bridge is formed in a semiconductor layer serving as a diaphragm on the first cavity, an electronic circuit is formed on an outer peripheral portion of the second cavity, and a wiring connecting the Wheaton bridge and the electronic circuit is formed on the second cavity. Or forming across the portion where the second cavity is cut;
It is set as the structure containing .
また、特許請求の範囲の請求項４に記載の発明によれば、請求項３に記載の発明において、前記第１トレンチホール群と前記第２トレンチホール群を同時に形成する構成とする。
According to a fourth aspect of the present invention, in the third aspect, the first trench hole group and the second trench hole group are formed simultaneously .
この発明によれば、ＳＯＮ構造のダイアフラムの外周部に応力緩和領域を設けることで、パッケージとチップとの線膨張係数差によって発生する熱応力がダイアフラムへ伝わることを緩和する効果と、被測定圧力Ｆによって発生する機械的応力を外周部に配置された電子回路へ伝わることを緩和することができる。その結果、高精度な物理量センサとすることができる。 According to the present invention, by providing a stress relaxation region on the outer periphery of the SON structure diaphragm, the effect of relaxing the thermal stress generated by the difference in linear expansion coefficient between the package and the chip to the diaphragm, and the pressure to be measured The transmission of the mechanical stress generated by F to the electronic circuit disposed on the outer peripheral portion can be reduced. As a result, a highly accurate physical quantity sensor can be obtained.
前記圧力緩和領域をトレンチ溝もしくは第２のＳＯＮ構造とすることで、ＳＯＮ構造の形成と同時に形成できるようになり、低コストで物理量センサを形成できる。 By forming the pressure relaxation region as a trench groove or a second SON structure, it can be formed simultaneously with the formation of the SON structure, and a physical quantity sensor can be formed at low cost.
図８は、ＳＯＮ構造を用いた圧力センサ５００であり、同図（ａ）は完成品の要部断面図、同図（ｂ）はＳＯＮ構造を形成する前の要部平面図、同図（ｃ）はＳＯＮ構造を形成した後の要部平面図である。図１（ａ）は支持基板は示されていない。 8A and 8B show a pressure sensor 500 using a SON structure, where FIG. 8A is a cross-sectional view of the main part of the finished product, FIG. 8B is a plan view of the main part before the SON structure is formed, and FIG. c) is a plan view of the main part after the SON structure is formed. FIG. 1A does not show the support substrate.
この圧力センサ５００は、半導体基板５１の表面層に形成される基準圧力準室となる空洞５４と、空洞５４上のダイアフラム５７となるｐ−半導体層５６と、このダイアフラム５７に形成されるホイートストンブリッジ５８（ｐ−層のゲージ抵抗５８ａで構成される）を備える。このダイアフラム５７の外周部に配置される電子回路６１と、前記ホイートストンブリッジ５８と前記電子回路６１を接続する配線６２を備える。また、図８では示さないが、図７に示すパッケージ８０と、外部導出端子８１と、ボンディングワイヤ８２とおよびゲル８３を備える。 The pressure sensor 500 includes a cavity 54 that is a reference pressure quasi-chamber formed in the surface layer of the semiconductor substrate 51, a p - semiconductor layer 56 that is a diaphragm 57 on the cavity 54, and a Wheatstone bridge formed in the diaphragm 57. 58 (consisting of a p - layer gauge resistor 58a). An electronic circuit 61 disposed on the outer periphery of the diaphragm 57 and a wiring 62 for connecting the Wheatstone bridge 58 and the electronic circuit 61 are provided. Although not shown in FIG. 8, the package 80 shown in FIG. 7, the external lead-out terminal 81, the bonding wire 82, and the gel 83 are provided.
前記の空洞５４上の半導体層５６と空洞５４および空洞５４下の半導体基板５１で図８に示すＳＯＮ構造７２を構成する。
尚、図中の符号で、６３はｐ−層であるゲージ抵抗５８ａを形成するｎウェル領域、６４は電子回路６１を構成するｐチャネルＭＯＳＦＥＴ５９が形成されるｎウェル領域、６５はｎチャネルＭＯＳＦＥＴ６０が形成されるｐウェル領域、６６はＬＯＣＯＳ、６７、６８はゲート電極、６９はソース領域およびドレイン領域となるｐ＋領域、７０はソース領域およびドレイン領域となるｎ＋領域、また、半導体層５６は空洞５４上に形成される図示しない薄い半導体層上に形成した同一の導電型（ｐ型）のエピタキシャル層も合せた層である。
The SON structure 72 shown in FIG. 8 is composed of the semiconductor layer 56 on the cavity 54, the cavity 54, and the semiconductor substrate 51 below the cavity 54.
In the figure, 63 is an n-well region for forming a p - layer gauge resistor 58a, 64 is an n-well region in which a p-channel MOSFET 59 constituting an electronic circuit 61 is formed, and 65 is an n-channel MOSFET 60. The p-well region to be formed, 66 is LOCOS, 67 and 68 are gate electrodes, 69 is a p + region serving as a source region and a drain region, 70 is an n + region serving as a source region and a drain region, and the semiconductor layer 56 is This is also a layer including an epitaxial layer of the same conductivity type (p-type) formed on a thin semiconductor layer (not shown) formed on the cavity 54.
図９は、図８の圧力センサの製造方法であり、同図（ａ）〜同図（ｃ）は工程順に示した要部製造工程図である。
まず、同図（ａ）において、ｐ−半導体ウェハ５１ａにトレンチホール群５２のトレンチホール５２ａを形成する。
FIG. 9 is a manufacturing method of the pressure sensor of FIG. 8, and FIGS. 9A to 9C are main part manufacturing process diagrams shown in the order of processes.
First, in FIG. 2A, trench holes 52a of a trench hole group 52 are formed in a p − semiconductor wafer 51a.
つぎに、同図（ｂ）において、水素アニールを施すことでによりトレンチホール群５２のトレンチホール５２ａが変形し、半導体ウェハ５１ａ内に空洞５４が形成されＳＯＮ構造７２が出来上がる。空洞５４上の半導体層５６がダイアフラム５７となる。 Next, in FIG. 6B, by performing hydrogen annealing, the trench holes 52a of the trench hole group 52 are deformed, and the cavities 54 are formed in the semiconductor wafer 51a, and the SON structure 72 is completed. The semiconductor layer 56 on the cavity 54 becomes the diaphragm 57.
つぎに、同図（ｃ）において、ダイアフラム７にホイートストンブリッジ５８のゲージ抵抗５８ａをｐ−層で形成し、空洞５４以外の半導体ウェハ５１上にＩＣ製造工程で、例えばＭＯＳトランジスタ（例えば、ｐチャネルＭＯＳＦＥＴ５９、ｎチャネルＭＯＳＦＥＴ１０）で構成される電子回路６１を形成する。また、ホイートストンブリッジ５８と電子回路６１を配線６２で接続する。続いて、半導体ウェハ５１ａを切断して半導体チップ７７とし、図７に示すパッケージ８０に半導体チップ７７を固着して圧力センサ５００は完成する。図９（ｃ）では電子回路６１を構成する横型のＭＯＳトランジスタのみを示した。 Next, in FIG. 3C, the gauge resistor 58a of the Wheatstone bridge 58 is formed on the diaphragm 7 as a p - layer, and an IC manufacturing process is performed on the semiconductor wafer 51 other than the cavity 54, for example, a MOS transistor (for example, a p-channel). An electronic circuit 61 composed of a MOSFET 59 and an n-channel MOSFET 10) is formed. Further, the Wheatstone bridge 58 and the electronic circuit 61 are connected by a wiring 62. Subsequently, the semiconductor wafer 51a is cut into semiconductor chips 77, and the semiconductor chips 77 are fixed to the package 80 shown in FIG. 7 to complete the pressure sensor 500. FIG. 9C shows only the lateral MOS transistor constituting the electronic circuit 61.
図８の圧力センサ５００において、前記の空洞５４を基準圧力室とし、空洞５４上にダイアフラム５７を配置することで、半導体チップ７７に印加される圧力（気体や液体による圧力）に応じてダイアフラム５７に変形が発生する。 In the pressure sensor 500 of FIG. 8, the cavity 54 is used as a reference pressure chamber, and the diaphragm 57 is disposed on the cavity 54, so that the diaphragm 57 is applied according to the pressure (pressure due to gas or liquid) applied to the semiconductor chip 77. Deformation occurs.
この変形により、ダイアフラム５７に機械的な応力が発生する。この機械的応力により、ダイアフラム５７に配置されたホイーストンブリッジ５８のゲージ抵抗５８ａの抵抗値が変動する（ピエゾ抵抗効果）。 Due to this deformation, mechanical stress is generated in the diaphragm 57. Due to this mechanical stress, the resistance value of the gauge resistor 58a of the Wheatstone bridge 58 arranged in the diaphragm 57 varies (piezoresistive effect).
このホイートストンブリッジ５８を構成するゲージ抵抗５８ａにより、抵抗変化を電気信号へ変換される。
この電気信号を、ＭＯＳトランジスタ等によって構成された電子回路６１である信号増幅器や調整回路にて増幅・特性トリミングした後、圧力センサ出力として外部へ出力する。
The change in resistance is converted into an electric signal by the gauge resistor 58a constituting the Wheatstone bridge 58.
This electric signal is amplified and characteristic trimmed by a signal amplifier or adjustment circuit which is an electronic circuit 61 composed of a MOS transistor or the like, and then output to the outside as a pressure sensor output.
しかし、図８の圧力センサ５００では、半導体チップ７７をパッケージ８０に接着剤８４で固着した際、パッケージ８０（例えばＰＰＳ（ｐｏｌｙ ｐｈｅｎｙｌｅｎｅ ｓｕｌｆｉｄｅ）、ＰＢＴ（ｐｏｌｙ ｂｕｔｈｙｌｅｎｅ ｔｅｒｅｐｈｔｈａｌｅｔｅ）などの樹脂やセラミックやリン青銅など）と、半導体チップ７７（シリコン）とで線膨張係数に差が生じる。そのため、接着時の温度を基準に半導体チップ７７とパッケージ８０の間に機械的な応力が発生してしまう。 However, in the pressure sensor 500 of FIG. 8, when the semiconductor chip 77 is fixed to the package 80 with the adhesive 84, a resin such as the package 80 (for example, polyphenylene sulfide (PPS), PBT (polybutylene terephthalate)), ceramic, phosphor bronze, or the like. And the semiconductor chip 77 (silicon) have a difference in linear expansion coefficient. Therefore, mechanical stress is generated between the semiconductor chip 77 and the package 80 based on the temperature at the time of bonding.
具体的に接着時の温度より低い温度環境下においては、半導体チップ７７よりパッケージ８０の熱膨張係数が大きいため、半導体チップ７７よりパッケージ８０が大きく縮む。そのためのチップ６５裏面には圧縮応力が発生し、一方半導体チップ７７表面には引張り応力が発生する。 Specifically, under a temperature environment lower than the temperature at the time of bonding, the package 80 has a larger thermal expansion coefficient than the semiconductor chip 77, so that the package 80 contracts more greatly than the semiconductor chip 77. Therefore, compressive stress is generated on the back surface of the chip 65, while tensile stress is generated on the surface of the semiconductor chip 77.
図１０は、半導体チップ表面７７ａでの引張り応力分布を示す図である。図８の圧力センサ５００では、この引張り応力が半導体チップ７７の中心部にて極大となるような形になり、その結果、半導体チップ７７の中心部に配置されたセンサ部（半導体チップ７７）に応力が加わり、これが圧力センサ５００の誤差となって現れる。つまり、被測定圧力以外の要因で発生する機械的な応力は外乱要素であるが、図８の圧力センサ５００ではこれを誤信号として検出してしまう構造になっている。 FIG. 10 is a diagram showing a tensile stress distribution on the semiconductor chip surface 77a. In the pressure sensor 500 of FIG. 8, the tensile stress is maximized at the central portion of the semiconductor chip 77, and as a result, the sensor portion (semiconductor chip 77) disposed at the central portion of the semiconductor chip 77. Stress is applied, and this appears as an error of the pressure sensor 500. That is, the mechanical stress generated by factors other than the pressure to be measured is a disturbance factor, but the pressure sensor 500 in FIG. 8 has a structure that detects this as an erroneous signal.
図１１は、ガスや流体からダイアフラムが被測定圧力Ｆを受けたときのチップ表面の応力分布を示す図である。図１１から分かるように、この被測定圧力Ｆによる引張り応力は空洞５４の端部で極大となり、その外側ではその引張り応力は緩やかに小さくなる。そのため、被測定圧力Ｆはダイアフラム５７の周囲で広い領域に影響を及ぼす。そのため、電子回路６１を形成する領域をダイアフラム５７から離さなくてはいけない。そうするとチップサイズが大きくなる。 FIG. 11 is a diagram showing the stress distribution on the chip surface when the diaphragm receives the pressure F to be measured from gas or fluid. As can be seen from FIG. 11, the tensile stress due to the measured pressure F becomes maximum at the end of the cavity 54, and the tensile stress gradually decreases outside the cavity 54. Therefore, the pressure F to be measured affects a wide area around the diaphragm 57. Therefore, the region where the electronic circuit 61 is formed must be separated from the diaphragm 57. This increases the chip size.
この発明のポイントは、ダイアフラムの周囲に圧力緩和領域を設けて、外周からダイアフラムが受ける圧力の外乱要因を排除し、またダイアフラムから外周の電子回路が被測定圧力から受ける影響を小さくして高精度の圧力センサを提供することである。実施の形態を以下に説明する。
＜実施の形態１＞
図１は、この発明の第１の実施の形態である圧力センサ１００の構成図であり、同図（ａ）は完成品の要部断面図、同図（ｂ）はＳＯＮ構造２２を形成する前のトレンチホール群とトレンチ溝を形成した平面図、同図（ｃ）はＳＯＮ構造を形成した後の要部平面図である。図１（ａ）は図２（ｃ）に相当し、図１（ｂ）は図２（ａ）に相当し、図１（ｃ）は図２（ｂ）に相当する。
The point of the present invention is that a pressure relaxation region is provided around the diaphragm to eliminate the disturbance factor of the pressure that the diaphragm receives from the outer periphery, and the influence that the electronic circuit of the outer periphery from the diaphragm receives from the pressure to be measured is reduced to high accuracy. A pressure sensor is provided. Embodiments will be described below.
<Embodiment 1>
1A and 1B are configuration diagrams of a pressure sensor 100 according to a first embodiment of the present invention. FIG. 1A is a sectional view of a principal part of a finished product, and FIG. A plan view in which the previous trench hole group and trench grooves are formed, and FIG. 8C is a plan view of the main part after the SON structure is formed. 1 (a) corresponds to FIG. 2 (c), FIG. 1 (b) corresponds to FIG. 2 (a), and FIG. 1 (c) corresponds to FIG. 2 (b).
この圧力センサ１００は、半導体基板１の表面層に形成される基準圧力準室となる空洞４と、空洞４上のｐ−半導体層６からなるダイアフラム７と、このダイアフラム７に形成されるホイートストンブリッジ８（ｐ−層のゲージ抵抗８ａで構成される）を備える。このダイアフラム７の外周部に配置される圧力緩和領域であるトレンチ溝５と、このトレンチ溝５の外周部に配置される電子回路１１と、前記ホイートストンブリッジ８と前記電子回路１１を接続する配線１２を備える。また、図１では示さないが、図７に示すパッケージ８０と、外部導出端子８１と、ボンディングワイヤ８２とおよびゲル８３を備える。 The pressure sensor 100 includes a cavity 4 that is a reference pressure quasi-chamber formed in a surface layer of a semiconductor substrate 1, a diaphragm 7 that includes a p - semiconductor layer 6 on the cavity 4, and a Wheatstone bridge formed in the diaphragm 7. 8 (consisting of a p - layer gauge resistor 8a). A trench groove 5 which is a pressure relaxation region disposed on the outer peripheral portion of the diaphragm 7, an electronic circuit 11 disposed on the outer peripheral portion of the trench groove 5, and a wiring 12 connecting the Wheatstone bridge 8 and the electronic circuit 11. Is provided. Although not shown in FIG. 1, the package 80 shown in FIG. 7, an external lead-out terminal 81, a bonding wire 82, and a gel 83 are provided.
トレンチ溝５は平面形状が４箇所で切られた環状でありダイアフラム７を取り囲むように配置され、この切られた箇所２１上に前記配線１２が形成される。ここでは４箇所で切られた例を示したが、切られた箇所は１箇所以上あればよく、１箇所で切られて、その箇所に配線１２を集中して配置する場合もある。このように配線１２をトレンチ溝５が切れている箇所２１（平坦面）に形成する理由は、トレンチ溝５の段差の影響により、配線１２を形成する為のレジストが塗布や露光がうまく行えずにパターン崩れが発生したり、配線１２の厚さが段差部で局所的に薄くなる事を防止するためのものである。また、ホイートストンブリッジ８は４個のゲージ抵抗８ａで構成される。 The trench groove 5 has an annular shape in which the planar shape is cut at four places, and is arranged so as to surround the diaphragm 7, and the wiring 12 is formed on the cut place 21. Here, an example of cutting at four places is shown, but it is sufficient that the number of cut places is one or more, and there is a case where the wiring 12 is concentrated and arranged at one place. The reason why the wiring 12 is formed in the portion 21 (flat surface) where the trench groove 5 is cut in this way is that the resist for forming the wiring 12 cannot be applied or exposed well due to the step difference of the trench groove 5. This is to prevent pattern collapse or the thickness of the wiring 12 from being locally reduced at the stepped portion. The Wheatstone bridge 8 is composed of four gauge resistors 8a.
前記の空洞４上の半導体層６と空洞４および空洞４下の半導体基板１で図２（ｂ）に示すようにＳＯＮ構造２２を構成する。また、ここでは電子回路１１はその構成要素であるｐチャネルＭＯＳＦＥＴ９とｎチャネルＭＯＳＦＥＴ１０のみを示した。 The semiconductor layer 6 on the cavity 4 and the cavity 4 and the semiconductor substrate 1 below the cavity 4 constitute an SON structure 22 as shown in FIG. Here, the electronic circuit 11 shows only the p-channel MOSFET 9 and the n-channel MOSFET 10 which are its components.
尚、図中の符号で、１３はｎウェル領域、１４は電子回路１１を構成するｐチャネルＭＯＳＦＥＴ９が形成されるｎウェル領域、１５はｎチャネルＭＯＳＦＥＴ１０が形成されるｐウェル領域、１６はＬＯＣＯＳ、１７、１８はゲート電極、１９はソース領域およびドレイン領域となるｐ＋領域、２０はソース領域およびドレイン領域となるｎ＋領域、また、半導体層６は後述のアニール処理によりＳＯＮ構造を形成する際に空洞４上に形成される薄い半導体層（例えば、１μｍ程度の厚さ）と、その薄い半導体層の上に形成した同一の導電型（ｐ型）のエピタキシャル層（例えば、５μｍ〜１５μｍ程度の厚さ）を合せた層である。半導体層６は、このエピタキシャル層を形成しないで薄い半導体層のみを利用する場合もある。 In the figure, reference numeral 13 denotes an n-well region, 14 denotes an n-well region in which the p-channel MOSFET 9 constituting the electronic circuit 11 is formed, 15 denotes a p-well region in which the n-channel MOSFET 10 is formed, 16 denotes LOCOS, Reference numerals 17 and 18 denote gate electrodes, 19 denotes a p + region serving as a source region and a drain region, 20 denotes an n + region serving as a source region and a drain region, and the semiconductor layer 6 forms an SON structure by an annealing process described later. A thin semiconductor layer (for example, about 1 μm thick) formed on the cavity 4 and an epitaxial layer (for example, about 5 μm to 15 μm) of the same conductivity type (p-type) formed on the thin semiconductor layer. (Thickness). The semiconductor layer 6 may use only a thin semiconductor layer without forming this epitaxial layer.
図５は、組立後の圧力センサ１００の半導体チップ２７の表面２７ａに発生する引張り応力分布を示す図である。この図は、パッケージ８０に半導体チップ２７を１００〜１５０℃の高温で接着した後、室温状態に戻したときの半導体チップ２７とパッケージ８０の間に発生する機械的応力の面内分布を示す。 FIG. 5 is a diagram showing a distribution of tensile stress generated on the surface 27a of the semiconductor chip 27 of the pressure sensor 100 after assembly. This figure shows the in-plane distribution of mechanical stress generated between the semiconductor chip 27 and the package 80 when the semiconductor chip 27 is bonded to the package 80 at a high temperature of 100 to 150 ° C. and then returned to room temperature.
応力は剛性が低い箇所（空洞４など）や段差がついている箇所に集中するという性質がある。そのため、ダイアフラム７の周辺にトレンチ溝５による段差を設けることで、図８の構造ではダイアフラム７で極大となっていた応力を、トレンチ溝５の箇所で極大となるように変化させる。その結果、ダイアフラム７上に発生する応力を大幅に低減することができる。 The stress has a property of being concentrated at a portion having low rigidity (such as the cavity 4) or a portion having a step. Therefore, by providing a step due to the trench groove 5 around the diaphragm 7, the stress that is maximal in the diaphragm 7 in the structure of FIG. 8 is changed so as to be maximal at the location of the trench groove 5. As a result, the stress generated on the diaphragm 7 can be greatly reduced.
前記したように、圧力緩和領域であるトレンチ溝５をダイアフラム７の周囲に配置することで、ダイアフラム７が周囲から受ける圧力の影響（外乱）を緩和できる。その結果、高精度の圧力センサ１００を製作できる。 As described above, the influence (disturbance) of the pressure that the diaphragm 7 receives from the periphery can be relaxed by arranging the trench groove 5 that is the pressure relaxation region around the diaphragm 7. As a result, a highly accurate pressure sensor 100 can be manufactured.
つまり、トレンチ溝５を設けることで、ダイアフラム７に対し、パッケージ８０との線膨張係数差による応力（特にゲージ抵抗８ａが形成される半導体基板１の表面層の引張り応力）の影響が小さくなり、被測定圧力Ｆ以外の外乱要素である圧力が低減されて圧力センサ１００の精度を向上することができる。 That is, by providing the trench groove 5, the influence of the stress due to the difference in linear expansion coefficient from the package 80 (particularly, the tensile stress of the surface layer of the semiconductor substrate 1 on which the gauge resistor 8a is formed) on the diaphragm 7 is reduced. The pressure, which is a disturbance element other than the measured pressure F, is reduced, and the accuracy of the pressure sensor 100 can be improved.
図６は、被測定圧力Ｆをダイアフラム７が受けた場合の応力分布を示す図である。被測定圧力Ｆはトレンチ溝５が防波堤となり電子回路１１へ伝達される機械的応力は小さくなる。その結果、圧力センサ１００の精度を向上することができる。 FIG. 6 is a diagram showing a stress distribution when the diaphragm 7 receives the pressure F to be measured. With the measured pressure F, the trench groove 5 serves as a breakwater, and the mechanical stress transmitted to the electronic circuit 11 is reduced. As a result, the accuracy of the pressure sensor 100 can be improved.
前記したように、トレンチ溝５を設けることで、前記したように、外周からダイアフラム７が受ける圧力の影響およびダイアフラムから電子回路１１が受ける圧力の影響を小さくできるため、電子回路１１とダイアフラム５の間の距離Ｌ１を図８の構造に比べより短縮することができて、チップサイズを小型化できる。
＜実施の形態２＞
図２は、この発明の第２の実施の形態である圧力センサ１００の製造方法であり、同図（ａ）〜同図（ｃ）は工程順に示した要部製造工程図である。
As described above, by providing the trench groove 5, as described above, the influence of the pressure received by the diaphragm 7 from the outer periphery and the pressure received by the electronic circuit 11 from the diaphragm can be reduced, so that the electronic circuit 11 and the diaphragm 5 can be reduced. The distance L1 between them can be shortened compared to the structure of FIG. 8, and the chip size can be reduced.
<Embodiment 2>
FIG. 2 shows a manufacturing method of the pressure sensor 100 according to the second embodiment of the present invention. FIGS. 2A to 2C are principal part manufacturing process diagrams shown in the order of processes.
まず、同図（ａ）において、ｐ−半導体ウェハ１ａにトレンチホール群２とこれと離してトレンチ溝３を同時に形成する。トレンチ溝３の開口部の幅Ｗはトレンチホール群２のトレンチホール２ａの開口部の直径Ｄ１（例えば、０．５μｍ程度）より大きくして、つぎの工程の水素アニールなどのアニール処理により空洞が形成されないようにする。また、トレンチ溝３の深さＴ２はトレンチホール２ａの深さＴ１以上であることが望ましい。トレンチホール群２とトレンチ溝３は同時に形成することができる。トレンチホール群２とトレンチ溝３の間の距離Ｌ１ａは、つぎの空洞２を形成する工程で、空洞２とトレンチ溝５が接しない範囲でできるだけ小さくするとチップサイズを小さくする上で好ましい。 First, in FIG. 2A, a trench hole group 2 and a trench groove 3 are simultaneously formed in a p − semiconductor wafer 1a apart from the trench hole group 2. The width W of the opening of the trench 3 is larger than the diameter D1 (for example, about 0.5 μm) of the opening of the trench hole 2a of the trench hole group 2, and the cavity is formed by an annealing process such as hydrogen annealing in the next step. Avoid formation. The depth T2 of the trench groove 3 is preferably equal to or greater than the depth T1 of the trench hole 2a. The trench hole group 2 and the trench groove 3 can be formed simultaneously. The distance L1a between the trench hole group 2 and the trench groove 3 is preferably as small as possible within the range where the cavity 2 and the trench groove 5 are not in contact with each other in the step of forming the next cavity 2 in order to reduce the chip size.
つぎに、同図（ｂ）において、水素アニールなどのアニール処理を施すことでによりトレンチホール群２が変形し、半導体ウェハ１内に空洞４が形成されＳＯＮ構造２２が出来上がる。このとき、トレンチ溝３も変形するが開口部は塞がらず空洞は形成されずトレンチ溝５となる。空洞４上には薄い半導体層が形成され、その上にエピタキシャル層を形成することで半導体層６が形成されダイアフラム７とすることができる。エピタキシャル層を形成せずにアニール処理により形成される空洞４上の薄い半導体層のみをダイアフラム７とすることもできる。また、トレンチ溝３が変形してトレンチ溝５となり、このトレンチ溝５が圧力緩和領域となる。 Next, in FIG. 2B, by performing an annealing process such as hydrogen annealing, the trench hole group 2 is deformed, and the cavity 4 is formed in the semiconductor wafer 1 to complete the SON structure 22. At this time, the trench groove 3 is also deformed, but the opening is not blocked and a cavity is not formed, so that the trench groove 5 is formed. A thin semiconductor layer is formed on the cavity 4, and an epitaxial layer is formed thereon to form a semiconductor layer 6, thereby forming a diaphragm 7. Only the thin semiconductor layer on the cavity 4 formed by annealing without forming the epitaxial layer can be used as the diaphragm 7. Further, the trench groove 3 is deformed to become a trench groove 5, and this trench groove 5 becomes a pressure relaxation region.
つぎに、同図（ｃ）において、ダイアフラム７にホイートストンブリッジ８のゲージ抵抗８ａをｐ−層で形成し、空洞４以外の半導体ウェハ１ａ上にＩＣ製造工程で、例えばＭＯＳトランジスタ（例えば、ｐチャネルＭＯＳＦＥＴ９、ｎチャネルＭＯＳＦＥＴ１０）で構成される電子回路１１を形成する。また、ホイートストンブリッジ８と電子回路１１を接続する配線１２（Ａｌ配線など）はトレンチ溝５が形成されない領域に形成する。続いて、半導体ウェハ１ａを切断して半導体チップ２７とし、図７に示すパッケージ８０に半導体チップ２７の裏面を接着剤などにより固着して圧力センサ１００が完成する。
＜実施の形態３＞
図３は、この発明の第３の実施の形態である圧力センサ２００の構成図であり、同図（ａ）は完成品の要部断面図、同図（ｂ）はＳＯＮ構造２２，２５を形成する前の第１、第２トレンチホール群２，２３を形成した平面図、同図（ｃ）はＳＯＮ構造を２２，２５形成した後の要部平面図である。図３（ａ）は図４（ｃ）に相当し、図３（ｂ）は図４（ａ）に相当し、図３（ｃ）は図４（ｂ）に相当する。
Next, in FIG. 3C, the gauge resistor 8a of the Wheatstone bridge 8 is formed on the diaphragm 7 as a p - layer, and an IC manufacturing process is performed on the semiconductor wafer 1a other than the cavity 4, for example, a MOS transistor (for example, p-channel). An electronic circuit 11 composed of a MOSFET 9 and an n-channel MOSFET 10) is formed. Further, the wiring 12 (Al wiring or the like) connecting the Wheatstone bridge 8 and the electronic circuit 11 is formed in a region where the trench groove 5 is not formed. Subsequently, the semiconductor wafer 1a is cut to form the semiconductor chip 27, and the back surface of the semiconductor chip 27 is fixed to the package 80 shown in FIG.
<Embodiment 3>
FIGS. 3A and 3B are configuration diagrams of a pressure sensor 200 according to a third embodiment of the present invention. FIG. 3A is a cross-sectional view of the main part of the finished product, and FIG. A plan view in which the first and second trench hole groups 2 and 23 are formed before the formation, and FIG. 10C is a plan view of a main part after the SON structures 22 and 25 are formed. 3 (a) corresponds to FIG. 4 (c), FIG. 3 (b) corresponds to FIG. 4 (a), and FIG. 3 (c) corresponds to FIG. 4 (b).
この圧力センサ２００は、半導体基板１の表面層に形成される基準圧力準室となる第１空洞４（図１の空洞４と同じ）と、この第１空洞４の外周部に第１空洞４と離して配置され圧力緩和領域となる第２空洞２４と、第１空洞４上の半導体層６からなるダイアフラム７と、第２空洞２４の外周部に配置される電子回路１１と、前記ホイートストンブリッジ８と前記電子回路１１を接続する配線１２を備える。また、図３では示さないが、図７に示すパッケージ８０と、外部導出端子８１と、ボンディングワイヤ８２とおよびゲル８３を備える。 The pressure sensor 200 includes a first cavity 4 (same as the cavity 4 in FIG. 1) that serves as a reference pressure quasi-chamber formed in the surface layer of the semiconductor substrate 1, and a first cavity 4 on the outer periphery of the first cavity 4. A second cavity 24 which is disposed apart from the first cavity 4 and serves as a pressure relaxation region, a diaphragm 7 made of the semiconductor layer 6 on the first cavity 4, an electronic circuit 11 disposed on the outer periphery of the second cavity 24, and the Wheatstone bridge 8 and wiring 12 for connecting the electronic circuit 11 to each other. Moreover, although not shown in FIG. 3, the package 80 shown in FIG. 7, the external derivation | leading-out terminal 81, the bonding wire 82, and the gel 83 are provided.
第２空洞２４の平面形状は第１空洞４の周囲を取り囲む環状とする。勿論、環状でなく一部切られた箇所を有する形状でも構わない。ダイアフラム７にはホイートストンブリッジ８を構成するゲージ抵抗８ａが形成されている。前記の第１空洞４が形成された領域が図１のＳＯＮ構造２２と同じであり、ここでは同一符号を付して第１ＳＯＮ構造２２と呼ぶことにする。また第２空洞２４が形成された領域が第２ＳＯＮ構造２５である。 The planar shape of the second cavity 24 is an annular shape surrounding the first cavity 4. Of course, it may be a shape having a part cut out instead of being annular. The diaphragm 7 is formed with a gauge resistor 8 a that constitutes a Wheatstone bridge 8. The region where the first cavity 4 is formed is the same as that of the SON structure 22 of FIG. 1, and here, the same reference numeral is given and referred to as the first SON structure 22. The region where the second cavity 24 is formed is the second SON structure 25.
圧力緩和領域である第２空洞２４（第２ＳＯＮ構造２５の構成要素）をダイアフラム７の周囲に配置することで、図５と同様に、応力を圧力緩和領域である第２ＳＯＮ構造２５で極大となるように変化させることができダイアフラム７が周囲から受ける応力を緩和できる。つまり、第２ＳＯＮ構造２５を設けることで、ダイアフラム７に対して、線膨張係数差による応力の影響が小さくなり、被測定圧力Ｆ以外の外乱要素である圧力が低減されて圧力センサ２００の精度を向上することができる。 By arranging the second cavity 24 (component of the second SON structure 25) that is the pressure relaxation region around the diaphragm 7, the stress is maximized in the second SON structure 25 that is the pressure relaxation region, as in FIG. The stress which the diaphragm 7 receives from the periphery can be relieved. In other words, by providing the second SON structure 25, the influence of the stress due to the difference in the linear expansion coefficient on the diaphragm 7 is reduced, and the pressure that is a disturbance element other than the pressure F to be measured is reduced, thereby improving the accuracy of the pressure sensor 200. Can be improved.
また、被測定圧力Ｆは第２ＳＯＮ構造２５が防波堤となり電子回路１１へ伝達される機械的応力は小さくなる。その結果、圧力センサ２００の精度を向上することができる。
前記したように、第２ＳＯＮ構造２５を設けることで、前記したように、外周からダイアフラム７が受ける圧力の影響およびダイアフラム７から電子回路１１が受ける圧力の影響を小さくできるため、電子回路１１とダイアフラム７の間の距離を図８の構造に比べより短縮することができて、チップサイズを小型化できる。
＜実施の形態４＞
図４は、この発明の第４の実施の形態である圧力センサ２００の製造方法であり、同図（ａ）〜同図（ｃ）は工程順に示した要部製造工程図である。
Further, the measured pressure F is such that the second SON structure 25 becomes a breakwater and mechanical stress transmitted to the electronic circuit 11 is reduced. As a result, the accuracy of the pressure sensor 200 can be improved.
As described above, since the second SON structure 25 is provided, as described above, the influence of the pressure applied to the diaphragm 7 from the outer periphery and the influence of the pressure applied to the electronic circuit 11 from the diaphragm 7 can be reduced. The distance between 7 can be shortened compared to the structure of FIG. 8, and the chip size can be reduced.
<Embodiment 4>
FIG. 4 shows a manufacturing method of a pressure sensor 200 according to the fourth embodiment of the present invention. FIGS. 4A to 4C are main part manufacturing process diagrams shown in the order of processes.
まず、同図（ａ）において、ｐ−半導体ウェハ１ａに第１トレンチホール群２とこれと離して第１トレンチホール群２の周囲を取り囲むように環状の第２トレンチホール群２３を同時に形成する。第２トレンチホール群２３を構成する第２トレンチホール２３ａの開口部の直径Ｄ２と深さＴ３は第１トレンチホール群２を構成する第１トレンチホール２ａの開口部の直径Ｄ１（例えば、０．５μｍ程度）と深さＴ１（例えば、７μｍ〜１０μｍ程度）と同じにする。また、第１トレンチホール群２と第２トレンチホール群２３との距離Ｌ２ａは、後で施される水素アニールによりそれぞれの空洞４，２４がつながらないような距離（例えば数μｍ程度）に配置する。 First, in FIG. 2A, an annular second trench hole group 23 is formed simultaneously on the p − semiconductor wafer 1a so as to surround the first trench hole group 2 apart from the first trench hole group 2. . The diameter D2 and the depth T3 of the opening of the second trench hole 23a constituting the second trench hole group 23 are the diameter D1 of the opening of the first trench hole 2a constituting the first trench hole group 2 (for example, 0. About 5 μm) and the depth T1 (for example, about 7 μm to 10 μm). Further, the distance L2a between the first trench hole group 2 and the second trench hole group 23 is arranged such that the respective cavities 4 and 24 are not connected by hydrogen annealing performed later (for example, about several μm).
つぎに、同図（ｂ）において、水素アニールなどのアニール処理を施すことでにより第１、第２トレンチホール群２，２３が変形し、半導体基板内に第１、第２空洞４，２４が形成され第１、第２ＳＯＮ構造２２，２５が出来上がる。第１空洞４上の半導体層６がダイアフラム７となり、第２ＳＯＮ構造２５が圧力緩和領域となる。但し、半導体層６は薄い半導体層とその上に形成されるエピタキシャル層で構成されることが多い。 Next, in FIG. 4B, by performing an annealing process such as hydrogen annealing, the first and second trench hole groups 2 and 23 are deformed, and the first and second cavities 4 and 24 are formed in the semiconductor substrate. The first and second SON structures 22 and 25 are formed. The semiconductor layer 6 on the first cavity 4 becomes the diaphragm 7, and the second SON structure 25 becomes the pressure relaxation region. However, the semiconductor layer 6 is often composed of a thin semiconductor layer and an epitaxial layer formed thereon.
つぎに、同図（ｃ）において、ダイアフラム７にホイートストンブリッジ８のゲージ抵抗８ａをｐ−層で形成し、空洞４以外の半導体ウェハ１ａ上にＩＣ製造工程で、例えばＭＯＳトランジスタ（例えば、ｐチャネルＭＯＳＦＥＴ９、ｎチャネルＭＯＳＦＥＴ１０）で構成される電子回路１１を形成する。また、ホイーストンブリッジ８と電子回路１１を接続する配線１２を形成する。続いて、半導体ウェハ１ａを切断して半導体チップ２７とし、図７に示すパッケージ８０に半導体チップ２７を接着剤により固着して圧力センサ２００は完成する。 Next, in FIG. 3C, the gauge resistor 8a of the Wheatstone bridge 8 is formed on the diaphragm 7 as a p - layer, and an IC manufacturing process is performed on the semiconductor wafer 1a other than the cavity 4, for example, a MOS transistor (for example, a p-channel). An electronic circuit 11 composed of a MOSFET 9 and an n-channel MOSFET 10) is formed. Further, a wiring 12 connecting the Wheatstone bridge 8 and the electronic circuit 11 is formed. Subsequently, the semiconductor wafer 1a is cut into semiconductor chips 27, and the semiconductor chips 27 are fixed to the package 80 shown in FIG. 7 with an adhesive, whereby the pressure sensor 200 is completed.
ＳＯＮ化した箇所はトレンチ溝５と比較して表面が平坦であるため、電子回路１１を形成するためのＩＣ製造工程内でのレジスト塗布や除去、配線１２（Ａｌ配線など）の配置が非常に容易になる。また、配線１２（幅や厚さおよび配置）に関する設計自由度はトレンチ溝５の場合に比べて非常に高くなる。 Since the surface where the SON is formed is flat compared to the trench groove 5, the resist coating and removal in the IC manufacturing process for forming the electronic circuit 11 and the arrangement of the wiring 12 (Al wiring, etc.) are very It becomes easy. In addition, the degree of freedom in design related to the wiring 12 (width, thickness, and arrangement) is much higher than that of the trench groove 5.
尚、前記実施の形態１〜実施の形態４では物理量センサとして圧力センサ１００．２００を例に挙げて説明したが、これに限るものではなく加速度センサなどにも本発明は適用できる。 In the first to fourth embodiments, the pressure sensor 100.200 is described as an example of the physical quantity sensor. However, the present invention is not limited to this, and the present invention can also be applied to an acceleration sensor or the like.
１ 半導体基板
１ａ ｐ−半導体ウェハ
２ トレンチホール群／第１トレンチホール群
２ａ ホール／第１ホール
３ トレンチ溝（水素アニール前）
４ 空洞／第１空洞
５ トレンチ溝（水素アニール後）
６ 半導体層
７ ダイアフラム
８ ホイーストンブリッジ
８ａ ゲージ抵抗
９ ｐチャネルＭＯＳＦＥＴ
１０ ｎチャネルＭＯＳＦＥＴ
１１ 電子回路
１２ 配線
１３，１４ ｎウェル領域
１５ ｐウェル領域
１６ ＬＯＣＯＳ
１７，１８ ゲート電極
１９ ｎ＋領域
２０ ｐ＋領域
２１ 箇所
２２ ＳＯＮ構造／第１ＳＯＮ構造
２３ 第２トレンチホール群
２３ａ 第２ホール
２４ 第２空洞
２５ 第２ＳＯＮ構造
８０ パッケージ
Ｌ１，Ｌ２，Ｌ１ａ，Ｌ２ａ 距離
Ｄ１ ホールの直径／第１ホールの直径
Ｄ２ 第２ホールの直径
Ｗ トレンチ溝の開口部の幅
Ｔ１ ホールの深さ／第１ホールの深さ
Ｔ２ トレンチの深さ
Ｔ３ 第２ホールの深さ
1 semiconductor substrate 1a p - semiconductor wafer 2 trench hole group / first trench hole group 2a Hall / first hole 3 trenches (hydrogen annealing before)
4 cavity / first cavity 5 trench groove (after hydrogen annealing)
6 Semiconductor layer 7 Diaphragm 8 Wheatstone bridge 8a Gauge resistance 9 p-channel MOSFET
10 n-channel MOSFET
DESCRIPTION OF SYMBOLS 11 Electronic circuit 12 Wiring 13,14 n well area | region 15 p well area | region 16 LOCOS
17, 18 Gate electrode 19 n + region 20 p + region 21 places 22 SON structure / first SON structure 23 second trench hole group 23a second hole 24 second cavity 25 second SON structure 80 Package L1, L2, L1a, L2a Distance D1 Diameter of hole / diameter of first hole D2 Diameter of second hole W Width of opening of trench groove T1 Depth of hole / depth of first hole T2 Depth of trench
T3 depth of the second hole
Claims (4)
前記圧力緩和領域が、トレンチ溝であり、該トレンチ溝の平面形状が一部切れた箇所がある環状で、該一部切れた箇所上に前記ホイートストンブリッジと前記電子回路とを接続する前記接続配線を配置するＳＯＮ構造を有する物理量センサの製造方法において、
半導体ウェハの表面層にトレンチホール群と、該トレンチホール群の外周部に前記トレンチホール群と離して平面形状が一部切れた箇所がある環状の前記トレンチ溝を形成する工程と、
アニールを施して、前記トレンチホール群のトレンチホールを変形させて、一つの大きな空洞を形成しＳＯＮ構造とする工程と、
アニールを施して、前記トレンチ溝を開口が塞がらない程度に変形させる工程と、
前記空洞上のダイアフラムとなる半導体層にホイートストンブリッジを形成し、前記トレンチ溝の外周部に電子回路を形成し、前記ホイートンブリッジと前記電子回路を接続する配線を前記環状の一部切れた前記箇所上に形成する工程と、
を含むことを特徴とするＳＯＮ構造を有する物理量センサの製造方法。 A cavity that forms a SON (silicon on nothing) structure that is disposed on a surface layer of a semiconductor substrate and serves as a reference pressure chamber; a diaphragm that includes the semiconductor layer that forms the SON structure on the cavity; and the diaphragm of the semiconductor substrate A pressure relaxation region disposed on the outer periphery of the diaphragm, a Wheatstone bridge disposed on the diaphragm, an electronic circuit disposed on the outer periphery of the pressure relaxation region, and the Wheatstone bridge and the electronic circuit connected to each other. ; and a connection wiring,
The pressure relaxation region is a trench groove, and the connection wiring that connects the Wheatstone bridge and the electronic circuit on the part of the part where the planar shape of the trench groove is partly cut in an annular shape. In a manufacturing method of a physical quantity sensor having a SON structure in which
Forming a trench hole group in the surface layer of the semiconductor wafer, and forming the annular trench groove having a portion where the planar shape is partially cut away from the trench hole group on the outer periphery of the trench hole group;
Applying annealing to deform the trench holes of the trench hole group to form one large cavity to form a SON structure;
Annealing to deform the trench groove so that the opening is not blocked;
A Wheatstone bridge is formed in a semiconductor layer serving as a diaphragm on the cavity, an electronic circuit is formed in an outer peripheral portion of the trench groove, and a wiring for connecting the Wheaton bridge and the electronic circuit is partially cut off in the annular shape Forming on the location;
A method of manufacturing a physical quantity sensor having a SON structure .
前記圧力緩和領域が、前記ＳＯＮ構造を第１ＳＯＮ構造とし該第１ＳＯＮ構造の外周部に配置される平面形状が、環状もしくは一部切れた箇所がある環状の第２ＳＯＮ構造である物理量センサの製造方法において、
半導体ウェハの表面層に第１トレンチホール群と、該第１トレンチホール群の外周部に前記第１トレンチホール群と離して平面形状が環状もしくは一部切れた箇所がある環状の第２トレンチホール群を形成する工程と、
アニールを施して、前記第１トレンチホール群の第１トレンチホールおよび前記第２トレンチホール群の第２トレンチホールを変形させて、前記第１ＳＯＮ構造を構成する第１空洞および前記第２ＳＯＮ構造を構成する第２空洞をそれぞれ形成する工程と、
前記第１空洞上のダイアフラムとなる半導体層にホイートストンブリッジを形成し、前記第２空洞の外周部に電子回路を形成し、前記ホイートンブリッジと前記電子回路を接続する配線を前記第２空洞上もしくは前記第２空洞が切れた前記箇所上を横切って形成する工程と、
を含むことを特徴とするＳＯＮ構造を有する物理量センサの製造方法。 A cavity that forms a SON (silicon on nothing) structure that is disposed on a surface layer of a semiconductor substrate and serves as a reference pressure chamber; a diaphragm that includes the semiconductor layer that forms the SON structure on the cavity; and the diaphragm of the semiconductor substrate A pressure relaxation region disposed on the outer periphery of the diaphragm, a Wheatstone bridge disposed on the diaphragm, an electronic circuit disposed on the outer periphery of the pressure relaxation region, and the Wheatstone bridge and the electronic circuit connected to each other. Connecting wiring to be
Method for manufacturing a physical quantity sensor in which the pressure relaxation region is an annular second SON structure in which the SON structure is the first SON structure and the planar shape disposed on the outer peripheral portion of the first SON structure is an annular or partially cut portion In
A first trench hole group on the surface layer of the semiconductor wafer, and an annular second trench hole in which the planar shape is annular or partially cut away from the first trench hole group on the outer periphery of the first trench hole group Forming a group;
Annealing is performed to deform the first trench hole of the first trench hole group and the second trench hole of the second trench hole group to form the first cavity and the second SON structure constituting the first SON structure Forming each second cavity to be
A Wheatstone bridge is formed in a semiconductor layer serving as a diaphragm on the first cavity, an electronic circuit is formed on an outer peripheral portion of the second cavity, and a wiring connecting the Wheaton bridge and the electronic circuit is formed on the second cavity. Or forming across the portion where the second cavity is cut;
A method of manufacturing a physical quantity sensor having a SON structure .
4. The method of manufacturing a physical quantity sensor having a SON structure according to claim 3, wherein the first trench hole group and the second trench hole group are formed simultaneously .
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| JP2012015141A JP5935352B2 (en) | 2012-01-27 | 2012-01-27 | Manufacturing method of physical quantity sensor having SON structure. |
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Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9250146B2 (en) * | 2013-02-12 | 2016-02-02 | Western New England University | Multidimensional strain gage |
| WO2014188817A1 (en) * | 2013-05-24 | 2014-11-27 | 日立金属株式会社 | Pressure sensor, and mass flow meter and mass flow controller using same |
| JP5783297B2 (en) * | 2013-08-06 | 2015-09-24 | 株式会社デンソー | Mechanical quantity sensor |
| DE102015209889B4 (en) * | 2015-05-29 | 2018-12-06 | Siltronic Ag | Structured semiconductor wafer and method for its production |
| KR102163052B1 (en) * | 2015-06-30 | 2020-10-08 | 삼성전기주식회사 | Pressure sensor element and method for manufacturing same |
| DE102016115334B4 (en) | 2016-08-18 | 2023-11-09 | Infineon Technologies Ag | SOI island in a power semiconductor component and a method for its production |
| DE102016119799B4 (en) * | 2016-10-18 | 2020-08-06 | Infineon Technologies Ag | INTEGRATED CIRCUIT CONTAINING A CURVED CAVE AND PRODUCTION METHOD |
| TWI609468B (en) | 2017-01-16 | 2017-12-21 | 欣興電子股份有限公司 | Package device and manufacturing method thereof |
| DE102017203919A1 (en) | 2017-03-09 | 2018-09-13 | Robert Bosch Gmbh | Method for producing a MEMS device for a micromechanical pressure sensor |
| JP6881056B2 (en) * | 2017-06-14 | 2021-06-02 | 富士電機株式会社 | How to manufacture pressure sensor and pressure sensor |
| JP7365974B2 (en) * | 2020-07-07 | 2023-10-20 | 三菱電機株式会社 | Semiconductor pressure sensor and its manufacturing method |
| DE102021211561A1 (en) * | 2020-11-19 | 2022-05-19 | Vitesco Technologies USA, LLC | MEMS PRESSURE SENSING ELEMENT WITH VOLTAGE ADJUSTERS |
| US11764258B2 (en) * | 2020-12-01 | 2023-09-19 | Globalfoundries U.S. Inc. | Airgap isolation structures |
| US11692895B2 (en) * | 2021-03-30 | 2023-07-04 | Rosemount Aerospace Inc. | Differential pressure sensor |
| US11881506B2 (en) | 2021-07-27 | 2024-01-23 | Globalfoundries U.S. Inc. | Gate structures with air gap isolation features |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63122925A (en) | 1986-11-13 | 1988-05-26 | Yokogawa Electric Corp | Semiconductor pressure sensor |
| JP2862060B2 (en) | 1993-06-23 | 1999-02-24 | 三菱電機株式会社 | Numerical control unit |
| JPH07280679A (en) | 1994-04-06 | 1995-10-27 | Hokuriku Electric Ind Co Ltd | Pressure sensor |
| US20010001550A1 (en) | 1998-11-12 | 2001-05-24 | Janusz Bryzek | Integral stress isolation apparatus and technique for semiconductor devices |
| JP4074051B2 (en) * | 1999-08-31 | 2008-04-09 | 株式会社東芝 | Semiconductor substrate and manufacturing method thereof |
| JP3629185B2 (en) * | 2000-06-15 | 2005-03-16 | 株式会社日立製作所 | Semiconductor sensor and manufacturing method thereof |
| DE10114036A1 (en) | 2001-03-22 | 2002-10-02 | Bosch Gmbh Robert | Process for the production of micromechanical sensors and sensors produced therewith |
| DE102004006201B4 (en) * | 2004-02-09 | 2011-12-08 | Robert Bosch Gmbh | Pressure sensor with silicon chip on a steel diaphragm |
| DE102005053861A1 (en) * | 2005-11-11 | 2007-05-16 | Bosch Gmbh Robert | Sensor arrangement and method for producing a sensor arrangement |
| EP1975587A1 (en) * | 2006-01-19 | 2008-10-01 | Fujikura Ltd. | Pressure sensor package and electronic part |
| JP5291979B2 (en) | 2008-04-24 | 2013-09-18 | 株式会社フジクラ | Pressure sensor, manufacturing method thereof, and electronic component including the pressure sensor |
| JP2009265012A (en) * | 2008-04-28 | 2009-11-12 | Fujikura Ltd | Semiconductor sensor |
| US8215176B2 (en) * | 2009-05-27 | 2012-07-10 | Continental Automotive Systems, Inc. | Pressure sensor for harsh media sensing and flexible packaging |
| WO2011148973A1 (en) * | 2010-05-25 | 2011-12-01 | ローム株式会社 | Pressure sensor and method for manufacturing pressure sensor |
-
2012
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