JP5899931B2 - Nanoimprint template and manufacturing method thereof - Google Patents

Description

  The present invention relates to a template for nanoimprint and a manufacturing method thereof. The present invention also relates to a method for manufacturing a semiconductor device and a magnetic recording medium based on the template.

  In recent years, with the miniaturization of semiconductor devices, problems in the photolithography process used in the semiconductor device manufacturing process are becoming prominent. In other words, the design rules of the most advanced semiconductor devices at present are miniaturized to about several tens of nanometers at half pitch (hp), and resolution is insufficient in conventional lithography using reduced pattern transfer using light. It is difficult to form. Therefore, in recent years, nanoimprint technology has been proposed instead of such lithography.

  The nanoimprint technology is a pattern formation technology that uses a mold member (referred to as a template) in which a fine concavo-convex pattern is formed on the surface of a substrate, and transfers the concavo-convex pattern to a workpiece to transfer the fine structure at an equal magnification. As a template manufacturing method that can cope with the miniaturization of about several tens of nanometers by hp as described above, a film is formed on the side wall of an uneven pattern that is made of an organic resist material and serves as a core material. There is known a method (so-called side wall method) in which a core material is removed so as to leave a film and a fine pattern is formed using the film (see, for example, Patent Document 1).

JP 2010-239209 A

  However, in the conventional side wall method described in Patent Document 1, no study has been made on a technique for assuring the accuracy of the size and shape of the concavo-convex pattern serving as the core material. The present invention has been made in view of such circumstances, and a main object of the present invention is to provide a technique for producing a pattern with guaranteed accuracy.

  In the conventional side wall method, it is a usual method to form a concavo-convex pattern as a core material with a resist made of an organic material. However, before or after film formation on the sidewall of the concavo-convex pattern made of an organic material, a scanning electron microscope or the like is used to try to inspect whether the concavo-convex pattern has been processed as desired. When the appearance was measured, it was found that the concavo-convex pattern as a resist was irradiated with an electron beam, and the concavo-convex pattern fluctuated due to the influence of the electron beam. The present invention has been created based on the above findings. The present invention includes the following inventions.

  The manufacturing method of the template for nanoimprint which concerns on one Embodiment of this invention is a 1st base material preparation process which prepares the 1st base material in which the 1st layer which consists of inorganic materials was formed in the single side | surface, and the said 1st layer Etching the substrate to produce a concavo-convex structure including a bottom wall and a side wall; An inspection step, a first film forming step of forming a first film on the concavo-convex structure, and a plurality of layers disposed on the side walls of the concavo-convex structure by performing anisotropic etching on the first film. And a concave portion forming step of etching the concave-convex structure to form a concave portion having the structural body disposed on the first base as a side wall. And

  The nanoimprint template manufacturing method according to an embodiment of the present invention includes a first base material preparation step in which a concavo-convex structure including a bottom wall and a side wall is formed on one side and a first base material made of an inorganic material is prepared. An inspection process for inspecting the appearance of the concavo-convex structure by irradiating the concavo-convex structure with an electron beam and detecting electrons generated from the concavo-convex structure; and a first film is formed on one surface of the first substrate. 1 film forming step, anisotropic etching is performed on the first film, and a plurality of structures are formed on the sidewalls of the concavo-convex structure, and the structure is used as a mask. Etching the first base material, a first recess having a first depth that includes the structure in a part of the side wall, and more than the first depth including the structure in at least a part of the side wall. Recess formation to form a second recess having a shallow second depth Characterized in that it comprises a degree, the.

  The nanoimprint template manufacturing method according to an embodiment of the present invention includes a first base material preparation step in which a concavo-convex structure including a bottom wall and a side wall is formed on one side and a first base material made of an inorganic material is prepared. An inspection process for inspecting the appearance of the concavo-convex structure by irradiating the concavo-convex structure with an electron beam and detecting electrons generated from the concavo-convex structure; and a first film is formed on one surface of the first substrate. 1 film forming step, anisotropic etching is performed on the first film, and a plurality of structures are formed on the sidewalls of the concavo-convex structure, and the structure is used as a mask. The first base material is etched, and then the structure is removed to form a first recess having a first depth and a second recess having a second depth shallower than the first depth. And a recess forming step for forming the substrate.

Moreover, the nanoimprint template according to an embodiment of the present invention includes a first recess having a first depth on one side and a second recess having a second depth shallower than the first depth. And a plurality of structures that are disposed on one side of the first base and constitute at least part of the side wall of the first recess or the side wall of the second recess. has a body, a material of the structure, Unlike the material of the first base material, when the one surface side of the first substrate upwardly, the part of at least the structure first It is above 1 base material, It is characterized by the above-mentioned.

  According to the present invention, it is possible to provide a pattern manufacturing technique with guaranteed accuracy.

It is a schematic plan view of the template for nanoimprint which concerns on one Embodiment of this invention. It is a fragmentary sectional view of the template for nanoimprinting concerning one embodiment of the present invention. It is a flowchart explaining the manufacturing method of the template for nanoimprint which concerns on one Embodiment of this invention. It is process sectional drawing explaining the manufacturing method of the template for nanoimprint which concerns on one Embodiment of this invention. It is process sectional drawing explaining the manufacturing method of the template for nanoimprint which concerns on one Embodiment of this invention. It is a flowchart explaining the manufacturing method of the template for nanoimprint which concerns on one Embodiment of this invention. It is process sectional drawing explaining the manufacturing method of the template for nanoimprint which concerns on one Embodiment of this invention. It is process sectional drawing explaining the manufacturing method of the replica template which concerns on one Embodiment of this invention. It is a schematic diagram explaining the manufacturing method of the semiconductor device which concerns on one Embodiment of this invention. It is a schematic diagram explaining the manufacturing method of the semiconductor device which concerns on one Embodiment of this invention. It is a schematic diagram explaining the manufacturing method of the magnetic-recording medium based on one Embodiment of this invention.

  The present invention will be described below with reference to the drawings. However, the present invention can be implemented in many different modes and should not be construed as being limited to the description of the embodiments described below. Note that in the drawings referred to in this embodiment, the same portions or portions having similar functions are denoted by the same reference numerals, and repeated description thereof may be omitted.

<Template for nanoimprint>
First, a nanoimprint template according to the present invention will be described with reference to FIGS. FIG. 1 is a schematic plan view of a nanoimprint template according to an embodiment of the present invention. The template 1000 has a pattern region X that includes the concavo-convex structure and a non-pattern region Y that exists around the pattern region X. In the pattern region X, a pattern to be transferred is mainly formed. In the drawing, the outer shape of the template 1000 is a rectangle, but is not limited to this, and may be an arbitrary shape such as a circle. Further, the pattern region X may be a so-called mesa structure that has a convex structure with respect to the non-pattern region Y, and the number of steps of the mesa structure can be appropriately set to 1 or more. The template 1000 includes templates 100 to 400 described below.

FIG. 2 is a partial cross-sectional view of the nanoimprint template according to the embodiment of the present invention, and is a cross-sectional view taken along line II of FIG. FIG. 2A is a diagram illustrating an embodiment of a template, and the template 100 includes a plurality of structures 20 disposed on one side of the first base material 10. A recess 12 is present between the plurality of structures 20. In the present specification, the expression “concave portion” is used to describe a portion that is concave with respect to the surface of the pattern region. The structure 20 is made of a material different from that of the first base material 10.

  FIG. 2B is a diagram showing another embodiment of the template for nanoimprinting. The template 200 includes a first recess 12a having a first depth on one side and a second shallower than the first depth. A first base material 10 having a second concave portion 12b having a depth of 1 mm, and a part of the side wall of the first concave portion 12a or the second concave portion 12b. And a plurality of structures 20 constituting all of the side walls. The structure 20 is made of a material different from that of the first base material 10.

  FIG. 2C is a diagram showing another embodiment of the template for nanoimprinting. The template 300 includes a first recess 12a having a first depth on one side and a second shallower than the first depth. A first base material 10 having a second recess 12b having a depth of 1 mm, and a part of a side wall of the first recess 12a, or a portion of the second recess 12b. A plurality of structures 20 constituting a part of the side wall. The structure 20 is made of a material different from that of the first base material 10.

  FIG. 2D is a diagram showing another embodiment of the template for nanoimprinting. The template 400 includes a first recess 12a having a first depth on one side and a second shallower than the first depth. And a second recess 12b having a depth of 1 mm. In the template 300, the structure 20 is removed.

  The nanoimprint templates shown in FIGS. 2B to 2D have a plurality of types of recesses having different depths. Since the first recess 12a is deeper than the second recess 12b, the capillary force that draws the transfer material into the interior during imprinting becomes relatively large, and as a result, bubbles contained in the transfer material are removed. It becomes easy to draw into the recess. Therefore, transfer defects due to bubbles can be reduced. The first depth is preferably set to 1.2 to 4 times the second depth in order to make it easier to draw bubbles by capillary force due to the first recess.

  The material of the first base material 10 is, for example, a glass such as quartz, soda lime glass, borosilicate glass, a semiconductor such as silicon, gallium arsenide, or gallium nitride, a metal substrate, or a composite made of any combination of these materials. It may be a material substrate. When the template is used for the optical imprint method, the first base material is made of a light-transmitting material, and typically quartz can be used. The thickness of the first base material can be set in consideration of the shape of the concavo-convex structure, the material strength, the suitability for handling, and the like, and can be set as appropriate within a range of 300 μm to 10 mm, for example.

  The structure 20 is preferably made of a material different from that of the first base material 10. In consideration of the manufacturing process described later, it is preferable to select a material having higher etching resistance than that of the first base material 10 and may be appropriately selected according to the material of the first base material and the etchant used for manufacturing. For example, when the first substrate 10 is made of quartz, metals such as Cr, Ta, Ti, and Mo, or oxides, nitrides, and oxynitrides thereof can be used. Since the above material can also function as a light-shielding film, when the first base material 10 is a transparent base material, the light transmittance with respect to the first base material 10 is low, and it is not directly under the structure 20. The imprint residual film removal process can be facilitated by generating a cured or undercured portion. The dimension of the structure 20 in plan view corresponds to the wiring width of a semiconductor device, which will be described later, the bit dimension of a recording bit of a magnetic recording medium, etc., and is preferably as fine as possible. It may be the following.

<Template manufacturing method>
With reference to FIGS. 3-7, the manufacturing method of the template for nanoimprint which concerns on this invention is demonstrated. 3 and 6 are flowcharts for explaining a method of manufacturing a nanoimprint template according to an embodiment of the present invention. 4 to 5 and 7 are process cross-sectional views illustrating a method for manufacturing a nanoimprint template according to an embodiment of the present invention.

(Manufacturing method of template 100)
With reference to FIG.3 and FIG.4, the manufacturing method of the template 100 which concerns on one Embodiment of this invention is demonstrated.

  The first base material preparation step in S11 is a step of preparing a first base material made of an inorganic material and having an uneven structure serving as a core material on one side. The uneven structure can be formed by a known lithography method. For example, the first layer 35 made of an inorganic material is formed on one surface of the first base material 10 (see FIG. 4A). The material of the first layer 35 is not limited as long as it is an inorganic material, but specifically, a metal such as Ni, a semiconductor such as silicon, glass, or the like may be used. In particular, the first layer 35 may be selected from materials having lower etching resistance than the first base material 10 and a structure to be described later. The first layer may contain a small amount of an organic material to the extent that the effects of the present invention are not impaired, and does not completely exclude the organic material. The first layer 35 can be formed by a known method such as an evaporation method, a sputtering method, or a CVD method depending on the material. For example, when the first substrate is made of quartz, polycrystalline silicon or the like may be selected as the first layer.

  Thereafter, a resist (not shown) is applied onto the first layer 35, and after patterning the resist, the first layer 35 is etched using the resist as a mask to form the concavo-convex structure 30a, 30b including the bottom wall and the side wall. Can be manufactured (see FIG. 4B). The concavo-convex structure 30a, 30b has an arbitrary shape such as a line shape, a pillar shape, or a hole shape in plan view. The resist patterning can be performed by lithography using radiation exposure such as an electron beam or EUV light, or imprint lithography using a master template. The side walls of the concavo-convex structure 30a, 30b may be perpendicular to one surface of the first base material 10, or may have a tapered shape in which the side walls are inclined. In consideration of easiness of film formation on the side wall of the concavo-convex structure described later, a tapered shape is preferable. More preferably, the taper angle, which is the angle formed by one side of the first base material 10 and the side walls of the concavo-convex structures 30a and 30b, is in the range of 85 ° to 89 °. For example, when the side walls of the concavo-convex structures 30a and 30b are curved surfaces, an angle formed by a tangent line having the greatest inclination among the tangent lines and one surface of the first base material 10 is defined as a taper angle.

  The inspection step in S12 is a step of inspecting the appearance of the concavo-convex structure by irradiating the concavo-convex structure with an electron beam to detect secondary electrons and reflected electrons generated from the concavo-convex structure. Typically, this can be done with a scanning electron microscope. In the conventional side wall method, since the concavo-convex structure as a core material is a resist made of an organic material, pattern fluctuation occurs when an electron beam is irradiated during inspection. This pattern variation is considered to be caused by various factors such as progress of cross-linking of the polymer, decomposition of the polymer, and cleavage of the side chain of the polymer due to electron beam irradiation. In the present invention, since the concavo-convex structure is composed of an inorganic material, there is no possibility that the above-mentioned problem occurs due to the electron beam irradiation, so that the occurrence of pattern fluctuation can be suppressed even when the electron beam is irradiated during the inspection. In the present invention, since the concavo-convex structure inspection process which becomes the core material is performed, the pattern accuracy can be guaranteed.

  The determination step in S13 is a step of determining whether the result is within an allowable range from the result of the inspection step and determining whether a correction step is necessary. For example, the shape of the concavo-convex structure may be measured, and when there is a protrusion or a large roughness in the design, it may be determined that it is outside the allowable range, and it may be determined that a correction process is necessary. Further, for example, when the dimension of the concavo-convex structure is measured and there is a large deviation from the design value, it may be determined that it is out of the allowable range, and it may be determined that a correction process is necessary. Further, for example, the surface of the concavo-convex structure may be measured, and when a foreign substance is present, it may be determined that it is out of the allowable range and a correction process is necessary. As a result of the inspection, if it is determined that correction is unnecessary, the process proceeds to S14 described later.

  The correction process in S13-1 is a process of correcting the concavo-convex structure when it is determined as “necessary correction” in the determination process. Examples of means for correcting the concavo-convex structure include correction using a focused ion beam. The ion beam is focused on a place where correction is required, and unnecessary portions are physically removed. Further, the correcting means is not limited to the above, and in the case of removing foreign matter, it may be physically removed using a fine probe.

  If necessary, the first substrate is washed after the correction step. In the conventional side wall method, since the concavo-convex structure as a core material is a resist made of an organic material, the cleaning resistance is low, and the erosion structure may be eroded by the cleaning liquid. In the present invention, since the concavo-convex structure is made of an inorganic material, the cleaning resistance is high and the risk of erosion by the cleaning liquid is reduced.

  When the correction process is performed, it is determined again in S13-2 whether the inspection process is necessary. If it is determined that the inspection is necessary, the inspection process (S12) is performed again to inspect whether or not the intended correction has been performed. If it is determined that the inspection is unnecessary, the process proceeds to the next S14. The re-inspection after correction can improve the accuracy of guarantee.

  The first film forming step in S14 is a step of forming the first film 40 on the concavo-convex structures 30a and 30b serving as core materials (see FIG. 4C). The first film 40 can be formed by vapor deposition, sputtering, CVD, or the like depending on the material. Among these, a sputtering method is preferably used in order to obtain a denser film. Since the sputtering method has high rectilinearity of the particles, it is preferable that the side wall of the concavo-convex structure is tapered or the first substrate is inclined to form a film. The first film 40 may be selected from materials having higher etching resistance than the concavo-convex structures 30a and 30b. For example, when the first substrate is made of quartz and the concavo-convex structures 30a and 30b are made of polycrystalline silicon, the first film 40 is Cr, Ta, Ti, Mo or the like, or oxides, nitrides, and acids thereof. It may be selected from nitrides.

  The structure manufacturing step in S15 is a step of performing anisotropic etching on the first film 40 to manufacture a plurality of structures 20 arranged on the side walls of the concavo-convex structures 30a and 30b (FIG. 4D). reference). By performing anisotropic etching on the first film 40, the first films on the top and bottom surfaces of the concavo-convex structures 30a, 30b are selectively removed, and the first film is removed from the concavo-convex structure 30a, It can remain on the side wall of 30b.

  The recess forming step in S16 is a step of etching the concavo-convex structures 30a and 30b to form the recesses 12 disposed on the first base material 10 and having the plurality of structures 20 as side walls (see FIG. 4E). . As described above, the template 100 having a finer pattern than the concavo-convex structure 30 on one surface of the first base material 10 can be produced.

(Manufacturing method of template 200)
With reference to FIG.3 and FIG.5, the manufacturing method of the template 200 which concerns on one Embodiment of this invention is demonstrated. Many parts of the manufacturing process are common to the manufacturing process of the template 100, and redundant description is omitted. The manufacturing method of the template 200 is characterized in that a part of the first base material is used for an uneven structure serving as a core material.

  In the first base material preparation step (S11), the first base material 10 made of an inorganic material and having the concavo-convex structure 30 formed thereon is prepared (see FIG. 5A). The first base material 10 may be formed by applying a resist (not shown) on the first base material, patterning the resist, and then etching the first base material using the resist as a mask to produce the concavo-convex structure 30. it can. The resist patterning can be performed by lithography using radiation exposure such as an electron beam or EUV light, or imprint lithography using a master template. The side wall of the concavo-convex structure 30 may be perpendicular to one side of the first base material 10 or may have a tapered shape. In consideration of easiness of film formation on the side wall of the concavo-convex structure described later, a tapered shape is preferable. More preferably, the taper angle, which is the angle formed by one side of the first base material 10 and the side wall of the concavo-convex structure 30, may be in the range of 91 ° to 95 °. For example, when the side wall of the concavo-convex structure 30 is a curved surface, an angle formed by a tangent line having the largest inclination among the tangent lines and one surface of the first base material 10 is defined as a taper angle. Note that the first base material 10 may contain a small amount of an organic material to the extent that the effects of the present invention are not impaired, and does not completely exclude the inclusion of the organic material.

  As described above, the inspection process (S12), the determination process (S13), and the correction process (S13-1) are performed on the first base material as necessary. For example, when the first substrate is a quartz substrate commonly used in a photomask, a photomask inspection device and a defect correction device may be used.

  When the correction process is performed, it is determined again in S13-2 whether the inspection process is necessary. If it is determined that the inspection is necessary, the inspection process (S12) is performed again to inspect whether or not the intended correction has been performed. If it is determined that the inspection is unnecessary, the process proceeds to the next S14. The re-inspection after correction can improve the accuracy of guarantee.

  In the first film formation step (S14), the first film 40 is formed on the concavo-convex structure 30 serving as a core material (see FIG. 5B). The material of the first film 40 is preferably made of an inorganic material and a material having high etching resistance with respect to the first base material 10. When the first substrate 10 is made of quartz, the first film 40 may be selected from Cr, Ta, Ti, Mo, or the like, or oxides, nitrides, and oxynitrides thereof.

  In the structure manufacturing step (S15), anisotropic etching is performed on the first film 40 to manufacture a plurality of structures 20 arranged on the sidewalls of the concavo-convex structure 30 (see FIG. 5C). By performing anisotropic etching on the first film 40, the first film on the top and bottom surfaces of the concavo-convex structure 30 is selectively removed, and the first film is formed on the side walls of the concavo-convex structure 30. It can be left.

  In the recess forming step (S16), the first base material 10 is etched using the plurality of structures 20 as a mask, and the first depth is arranged on the first base material 10 and has the plurality of structures 20 as side walls. A first recess 12a having the second recess 12b having a second depth shallower than the first depth is formed (see FIG. 5D). As described above, the template 200 can be manufactured.

(Manufacturing method of template 300)
With reference to FIG.3 and FIG.5, the manufacturing method of the template 300 which concerns on one Embodiment of this invention is demonstrated. Prior to the recess forming step (S16) of the manufacturing process, it is common to the manufacturing process of the template 200, and redundant description is omitted.

  In S16, using the plurality of structures 20 as a mask, the concavo-convex structure 30 formed of a part of the first base material 10 is etched, and the first structure having the plurality of structures 20 disposed on the first base material 10 as the side walls is etched. A first recess 12a having a depth and a second recess 12b having a second depth shallower than the first depth are formed (see FIG. 5E). Thus, the template 300 can be manufactured. In the side wall of the first recess 12 a of the template 300, the upper end portion (template top surface side) in the drawing is made of the structure 20, while the lower end portion is made of the first base material 10.

(Manufacturing method of template 400)
With reference to FIGS. 5-7, the manufacturing method of the template 400 which concerns on one Embodiment of this invention is demonstrated. FIG. 6 is a flowchart illustrating a method for manufacturing a nanoimprint template according to an embodiment of the present invention. S21 to S26 and S11 to S16 in the flowchart shown in FIG. Detailed description will be given. Prior to S26, which is a recess forming process of the manufacturing process, is common to the manufacturing process of the template 300.

  FIG. 7 is a process cross-sectional view illustrating a method for producing a nanoimprint template according to an embodiment of the present invention, and FIG. 7A shows a state in which the first substrate is etched using the structure as a mask. Before reaching FIG. 7A, a first substrate preparation step (S21) in which a concavo-convex structure as a core material is formed on one side and a first base material made of an inorganic material is prepared, and an electron beam is applied to the concavo-convex structure. The inspection process (S22) which inspects the appearance of the concavo-convex structure by detecting electrons generated from the concavo-convex structure, the determination process (S23) and the correction process (S23-1) as necessary, the first substrate A first film forming step (S24) for forming a first film on one side, a structure in which anisotropic etching is performed on the first film to produce a plurality of structures disposed on the side walls of the concavo-convex structure Through the body manufacturing step (S25). Refer to FIGS. 5A to 5E for these process cross-sectional views.

  In S26, the structure is removed from the first base material 10, the first recess 12a having the first depth on one side of the first base material 10, and the second depth shallower than the first depth. A template 400 having the second concave portion 12b having the structure is manufactured (see FIG. 7B). The structure removing means can be selected depending on the material, and can be performed by dry etching or wet etching.

<Manufacturing method of replica template>
Next, a method for producing a replica template using the templates 100 to 400 described above will be described with reference to FIG. For convenience of explanation, an example in which the template 200 is used as a template is shown, but the templates 100, 300, and 400 may be used. In the following, an embodiment in which a replica template is produced by an optical imprint method is shown, but a thermal imprint method may be used.

  A second substrate 510 which is a substrate on the transfer side is prepared. The material of the second base material 510 is not limited, glass such as quartz, soda lime glass, borosilicate glass, semiconductor such as silicon, gallium arsenide, gallium nitride, resin substrate such as polycarbonate, polypropylene, polyethylene, metal substrate, or A composite material substrate made of any combination of these materials may be used. When performing the optical imprint method, it is preferable to select a material having optical transparency for at least one of the template and the second substrate. The thickness of the second base material 510 can be set in consideration of material strength, handling suitability, and the like, and can be set as appropriate within a range of 300 μm to 10 mm, for example.

  A transfer material 522 is supplied onto the second base material 510 by a known coating method such as an ink jet method or a spin coating method. The material to be transferred is a photocurable resin. The template and the second substrate are arranged to face each other, the distance between them is reduced, and the template 200 and the material to be transferred 522 are brought into contact with each other. With the contact, the transfer material 522 develops in the surface direction of the template 200 and enters the first recess 12a and the second recess 12b. Since the first recess 12a is a recess deeper than the second recess 12b, the capillary force that draws the material to be transferred into the recess at the time of contact is relatively large. As a result, the bubbles contained in the material to be transferred are easily drawn into the recess as the material to be transferred moves. The height of the material to be transferred formed by the first recess 12a is higher than that of the second recess 12b. By making the height of the material to be transferred molded by the first recess 12a higher than the height required after molding (equal to the depth of the second recess 12b), the inside of the first recess 12a Even if bubbles are drawn in, there is a low possibility of a transfer defect. Therefore, transfer defects can be reduced.

  The curing step is a step of curing the material to be transferred with the material to be transferred interposed between the template and the second base material (see FIG. 8A). After the first concave portion 12a and the second concave portion 12b are filled with the material to be transferred 522, the material to be transferred 522 is irradiated with light to cure the material to be transferred 522. The transfer material 522 may be irradiated with light from either the template side or the second substrate side. When light irradiation is performed from the template side, the structure is made of a light-shielding material such as Cr, Ta, Ti, Mo, or their oxides, nitrides, oxynitrides, etc. Hardening of the part does not proceed sufficiently and it becomes easy to remove by etching.

  The mold release step is a step of separating the template and the cured transfer material to form a transfer layer on the second substrate (see FIG. 8B). When the template 200 is separated from the material to be transferred 522, a transfer layer 524 including a first recess and a portion having a different height corresponding to the second recess is formed on the second substrate 510.

  The remaining film of the transfer layer 524 in the mold release step is removed by etching to expose a part of the second base material 510 (see FIG. 8C). The remaining film of the transfer layer 524 can be removed, for example, by etching with oxygen plasma.

  The duplicate pattern forming step is a step of etching the exposed second base material to form a duplicate pattern having a uniform depth (see FIG. 8D). The second substrate 510 is etched using the transfer layer 524 from which the remaining film has been removed as a mask to form a replication pattern 530 on the second substrate 510. As described above, the replica template 500 can be manufactured.

<Method for Manufacturing Semiconductor Device>
Next, a method for manufacturing a semiconductor device using any of the templates 100 to 400 and the replica template 500 described above will be described with reference to FIGS. In addition, although the aspect applied to the typical manufacturing process of a semiconductor device below is demonstrated, it is not limited to this.

(Pattern of gate electrode)
This embodiment relates to a method for manufacturing a semiconductor device, including a step of patterning a gate electrode by nanoimprint lithography. FIG. 9 is a schematic diagram for explaining a method of manufacturing a semiconductor device according to an embodiment of the present invention, and shows a mode in which nanoimprint lithography is performed using the template or the replica mold for patterning a gate electrode. A semiconductor substrate 710 in which a source electrode 712 and a drain electrode 714 are formed by implanting impurities is prepared. A conductive layer 730 such as polycrystalline silicon is formed over the semiconductor substrate 710 with an insulating layer 720 such as SiO ₂ (see FIG. 9A). A resist (not shown) is applied on the conductive layer 730, and the resist is patterned with a template or a replica template to form a resist pattern (not shown). Based on the resist pattern, the conductive layer 730 is etched to form a gate electrode 732 (see FIG. 9B). A semiconductor device is manufactured through the above steps.

(Formation of conductive vias)
The present embodiment relates to a method for manufacturing a semiconductor device, including a step of patterning an insulating layer by nanoimprint lithography and a step of disposing a conductive material on the insulating layer by a damascene method. FIG. 10 is a schematic diagram for explaining a method of manufacturing a semiconductor device according to an embodiment of the present invention, and shows a mode in which imprinting using the template or the replica mold is performed to form a conductive via for interlayer connection. A semiconductor substrate 810 in which a wiring layer 830 and insulating layers 822 and 824 are stacked is prepared. The uppermost insulating layer 824 is patterned with a template or a replica template to form through holes 824a and 824b (see FIG. 10B). The through holes 824a and 824b are filled with a conductive material by a damascene method to form conductive vias 832a and 832b (see FIG. 10C). A semiconductor device is manufactured through the above steps.

<Method of manufacturing magnetic recording medium>
Next, a method for manufacturing a magnetic recording medium using any of the templates 100 to 400 and the replica template 500 described above will be described with reference to FIG. In addition, although the aspect applied to the typical manufacturing process of a magnetic recording medium is demonstrated below, it is not limited to this.

  The present aspect relates to a method for manufacturing a magnetic recording medium, including a step of patterning a magnetic layer through a patterned resist and disposing a magnetic separation material on the patterned magnetic layer. FIG. 11 is a schematic diagram illustrating a method for manufacturing a magnetic recording medium according to an embodiment of the present invention. A disk substrate 910 provided with a magnetic layer 920 is prepared (see FIG. 11A). A resist (not shown) is applied on the magnetic layer 920, and the resist is patterned with a template or a replica template to create a resist pattern (not shown). Based on this resist pattern, the magnetic layer 920 is etched to form recesses 920a to 920d (see FIG. 11B). Recording bits 930a to 930d are manufactured by filling the concave portions 920a to 920d with a magnetic separation material (see FIG. 11C). A magnetic recording medium is manufactured through the above steps.

100, 200, 300, 400, 1000 ... template, 10 ... first substrate, 12 ... recess, 12a ... first recess, 12b ... second recess, 20 ... structure, 30, 30a, 30b ... uneven structure 35 ... first layer, 510 ... second substrate, 522 ... transfer material, 524 ... transfer layer, 530 ... replicated pattern, 710 ... semiconductor substrate, 712 ... source electrode, 714 ... drain electrode, 720 ... insulating layer, 730 ... conductive layer, 732 ... gate electrode, 810 ... semiconductor substrate, 822, 824 ... insulating layer, 824a, 824b ... through hole, 830 ... wiring layer, 832a, 832b ... conductive via, 910 ... disk substrate, 920 ... magnetic layer , 920a, 920b, 920c, 920d ... concave portion, 930a, 930b, 930c, 930d ... recording bit

Claims (16)

A first base material preparation step of preparing a first base material on which a first layer made of an inorganic material is formed on one side;
A concavo-convex structure preparation step of etching the first layer to prepare a concavo-convex structure including a bottom wall and a side wall;
An inspection step of irradiating the concavo-convex structure with an electron beam to detect electrons generated from the concavo-convex structure, and inspecting the appearance of the concavo-convex structure;
A first film forming step of forming a first film on the uneven structure;
A structure manufacturing step of performing anisotropic etching on the first film and manufacturing a plurality of structures disposed on the sidewalls of the concavo-convex structure;
Etching the concavo-convex structure to form a recess having a side wall of the structure disposed on the first base material; and
The manufacturing method of the template for nanoimprint characterized by including these. A first base material preparation step in which a concavo-convex structure including a bottom wall and a side wall is formed on one side and a first base material made of an inorganic material is prepared;
An inspection step of irradiating the concavo-convex structure with an electron beam to detect electrons generated from the concavo-convex structure, and inspecting the appearance of the concavo-convex structure;
A first film forming step of forming a first film on one side of the first substrate;
A structure manufacturing step of performing anisotropic etching on the first film and manufacturing a plurality of structures disposed on the sidewalls of the concavo-convex structure;
Etching the first substrate using the structure as a mask, including a first recess having a first depth including the structure in a part of a side wall, and including the structure in at least a part of the side wall. A recess forming step of forming a second recess having a second depth shallower than the first depth;
The manufacturing method of the template for nanoimprint characterized by including these. After the inspection process,
The method for producing a nanoimprint template according to claim 1, further comprising a correcting step of correcting the uneven structure.   The method for producing a nanoimprint template according to any one of claims 1 to 3, wherein the structure has low light transmittance with respect to the first base material. The material of the first substrate is quartz,
5. The method for producing a template for nanoimprint according to claim 1, wherein the material of the structure is a compound containing at least one of Cr, Ta, Ti, and Mo. A first base material preparation step in which a concavo-convex structure including a bottom wall and a side wall is formed on one side and a first base material made of an inorganic material is prepared;
An inspection step of irradiating the concavo-convex structure with an electron beam to detect electrons generated from the concavo-convex structure, and inspecting the appearance of the concavo-convex structure;
A first film forming step of forming a first film on one side of the first substrate;
A structure manufacturing step of performing anisotropic etching on the first film and manufacturing a plurality of structures disposed on the sidewalls of the concavo-convex structure;
The first base material is etched using the structure as a mask, and then the structure is removed to form a first recess having a first depth, and a second depth shallower than the first depth. A recess forming step of forming a second recess having:
The manufacturing method of the template for nanoimprint characterized by including these. After the inspection process,
The method for manufacturing a nanoimprint template according to claim 6, further comprising a correction step of correcting the uneven structure. A method for producing a replica template using a template produced by the method according to claim 1,
A curing step of curing the material to be transferred with the material to be transferred interposed between the template and the second base material;
A mold release step of separating the template and the material to be transferred after the curing step, and forming a transfer layer including a portion having a height corresponding to the concave portion of the template on the second base material;
A replication pattern forming step of etching the transfer layer to expose a part of the second base material and etching the exposed second base material to form a replication pattern. To manufacture a replica template. Prior to the curing step,
The replica template manufacturing method according to claim 8, further comprising an imprinting step of supplying the material to be transferred onto the second substrate and bringing the material to be transferred into contact with the template.   A method for manufacturing a semiconductor device, comprising a step of performing nanoimprint lithography using the template manufactured by the method according to claim 1.   A method for producing a magnetic recording medium, comprising a step of performing nanoimprint lithography using a template produced by the method according to claim 1.   A method for manufacturing a semiconductor device, comprising a step of performing nanoimprint lithography using the replica template manufactured by the method according to claim 8.   A method for producing a magnetic recording medium, comprising a step of performing nanoimprint lithography using the replica template produced by the method according to claim 8. A first base material having a first recess having a first depth and a second recess having a second depth shallower than the first depth on one side;
A plurality of structures disposed on one side of the first base material and constituting a part of the side wall of the first recess or at least a part of the side wall of the second recess;
The material of the structure, Unlike the material of the first substrate,
A nanoimprint template , wherein at least a part of the structure is above the first substrate when one side of the first substrate is turned upward .   The nanoimprint template according to claim 14, wherein the structure has low light transmittance with respect to the first base material. The material of the first substrate is quartz,
The nanoimprint template according to claim 14 or 15, wherein the material of the structure is a compound containing at least one of Cr, Ta, Ti, and Mo.

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