JP5874525B2 - 制御装置、記憶装置、記憶制御方法 - Google Patents

制御装置、記憶装置、記憶制御方法 Download PDF

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Publication number
JP5874525B2
JP5874525B2 JP2012109090A JP2012109090A JP5874525B2 JP 5874525 B2 JP5874525 B2 JP 5874525B2 JP 2012109090 A JP2012109090 A JP 2012109090A JP 2012109090 A JP2012109090 A JP 2012109090A JP 5874525 B2 JP5874525 B2 JP 5874525B2
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JP2013235531A (ja
JP2013235531A5 (enExample
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伸吾 麻生
伸吾 麻生
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Sony Corp
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Sony Corp
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Priority to JP2012109090A priority Critical patent/JP5874525B2/ja
Priority to US13/875,961 priority patent/US20130304972A1/en
Priority to CN2013101607888A priority patent/CN103389942A/zh
Publication of JP2013235531A publication Critical patent/JP2013235531A/ja
Publication of JP2013235531A5 publication Critical patent/JP2013235531A5/ja
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    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02Addressing or allocation; Relocation
    • G06F12/0223User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023Free address space management
    • G06F12/0238Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72Details relating to flash memory management
    • G06F2212/7201Logical to physical mapping or translation of blocks or pages

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Memory System (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
JP2012109090A 2012-05-11 2012-05-11 制御装置、記憶装置、記憶制御方法 Expired - Fee Related JP5874525B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2012109090A JP5874525B2 (ja) 2012-05-11 2012-05-11 制御装置、記憶装置、記憶制御方法
US13/875,961 US20130304972A1 (en) 2012-05-11 2013-05-02 Control device, storage device, and storage control method
CN2013101607888A CN103389942A (zh) 2012-05-11 2013-05-03 控制装置、存储装置及存储控制方法

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JP2012109090A JP5874525B2 (ja) 2012-05-11 2012-05-11 制御装置、記憶装置、記憶制御方法

Publications (3)

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JP2013235531A JP2013235531A (ja) 2013-11-21
JP2013235531A5 JP2013235531A5 (enExample) 2015-03-19
JP5874525B2 true JP5874525B2 (ja) 2016-03-02

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US (1) US20130304972A1 (enExample)
JP (1) JP5874525B2 (enExample)
CN (1) CN103389942A (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9904688B2 (en) 2014-09-30 2018-02-27 International Business Machines Corporation Buffering and replicating data written to a distributed storage system
US9916325B2 (en) 2014-09-30 2018-03-13 International Business Machines Corporation Quick initialization of data regions in a distributed storage system
TWI601011B (zh) * 2016-07-05 2017-10-01 慧榮科技股份有限公司 偵測使用中邏輯頁面之資料儲存裝置與資料儲存方法
US10977186B2 (en) * 2017-11-21 2021-04-13 Micron Technology, Inc. Last written page searching
KR102783889B1 (ko) 2018-11-16 2025-03-24 삼성전자주식회사 불휘발성 메모리 장치를 포함하는 스토리지 장치 및 이의 동작 방법
CN112988611A (zh) * 2019-12-17 2021-06-18 国民技术股份有限公司 非易失性存储器的数据写入方法、终端和可读存储介质
CN112988038B (zh) * 2019-12-17 2024-08-06 国民技术股份有限公司 非易失性存储器的数据写入方法、终端和可读存储介质
JP7621915B2 (ja) * 2021-09-06 2025-01-27 キオクシア株式会社 情報処理装置
CN116661704B (zh) * 2023-07-07 2024-03-08 深圳宏芯宇电子股份有限公司 存储装置数据读写方法、存储器存储装置及存储器控制器

Family Cites Families (11)

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Publication number Priority date Publication date Assignee Title
JPH07219720A (ja) * 1993-10-01 1995-08-18 Hitachi Maxell Ltd 半導体メモリ装置ならびにその制御方法
JP2005316793A (ja) * 2004-04-30 2005-11-10 Tdk Corp フラッシュメモリシステム及びフラッシュメモリの制御方法
JP2007164318A (ja) * 2005-12-12 2007-06-28 Renesas Technology Corp 記憶装置
KR100882740B1 (ko) * 2007-02-22 2009-02-09 삼성전자주식회사 맵 히스토리 기반의 불휘발성 메모리의 매핑 방법 및 저장장치
US7975109B2 (en) * 2007-05-30 2011-07-05 Schooner Information Technology, Inc. System including a fine-grained memory and a less-fine-grained memory
US8219776B2 (en) * 2009-09-23 2012-07-10 Lsi Corporation Logical-to-physical address translation for solid state disks
US8726126B2 (en) * 2010-03-23 2014-05-13 Apple Inc. Non-regular parity distribution detection via metadata tag
US8850160B2 (en) * 2010-08-23 2014-09-30 Apple Inc. Adaptive write behavior for a system having non-volatile memory
US8793429B1 (en) * 2011-06-03 2014-07-29 Western Digital Technologies, Inc. Solid-state drive with reduced power up time
US9104614B2 (en) * 2011-09-16 2015-08-11 Apple Inc. Handling unclean shutdowns for a system having non-volatile memory
US8819367B1 (en) * 2011-12-19 2014-08-26 Western Digital Technologies, Inc. Accelerated translation power recovery

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CN103389942A (zh) 2013-11-13
US20130304972A1 (en) 2013-11-14
JP2013235531A (ja) 2013-11-21

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