JP5873661B2 - Solid-state imaging device and electronic information device - Google Patents

Description

  The present invention, in combination with a liquid crystal cell, is a solid-state image sensor for a particularly high pixel, high sensitivity, high smear characteristic composed of a semiconductor element that photoelectrically converts image light from a subject and images the solid-state image sensor. Digital cameras such as digital video cameras and digital still cameras used as image input devices as image input devices, image input cameras, scanner devices, facsimile devices, DSCs, surveillance cameras, television telephone devices, mobile phone devices with cameras, etc. It relates to electronic information equipment.

  As a conventional solid-state image pickup device, a CCD solid-state image pickup device that obtains an image pickup signal by amplifying each signal charge generated by photoelectric conversion for each pixel portion after charge transfer in a predetermined direction by a charge transfer portion, and photoelectric conversion for each pixel portion. There is a CMOS solid-state imaging device that amplifies each signal charge generated by conversion and reads out a signal as an imaging signal.

  The configuration of this CCD solid-state imaging device is disclosed in Patent Document 1, and normally, when the solid-state imaging device is vertically transferred, the vertical transfer portion needs to be shielded from light by a light-shielding film.

  FIG. 11 is a plan view showing a configuration example of a main part of a unit pixel portion of a conventional CCD solid-state imaging device disclosed in Patent Document 1. In FIG.

  In FIG. 11, a unit pixel portion of a conventional CCD solid-state imaging device 100 includes an opening portion 102 of a light shielding film on a light receiving portion 101 that photoelectrically converts image light from a subject to generate a signal charge, and below the opening portion 102. Element transfer between the vertical transfer unit 103 for transferring signal charges read from the light receiving unit 101 in a predetermined direction, the channel unit 104 between the light receiving unit 101 and the vertical transfer unit 103, and adjacent pixels. It can be divided into an element isolation region 105 for the purpose.

  FIG. 12 is a cross-sectional view of the conventional CCD solid-state imaging device of FIG. 11 taken along line AB.

  As shown in FIG. 12, the unit pixel portion of this conventional CCD solid-state imaging device 100 includes an N-type light receiving portion 101 and a vertical transfer portion 103 in a first P-type well region 112 on an N-type silicon substrate 111. Are formed, and a P-type channel stopper region 114 constituting the element isolation region 105 on the outer peripheral side is formed. In addition, a P-type positive charge accumulation region 115 is formed on the surface side of the light receiving unit 101, and a second P-type well region 116 is formed immediately below the vertical register 113.

  A transfer electrode 118 made of a polycrystalline silicon layer is selectively formed on the vertical register 113 via a gate insulating film 117, and an Al light shielding film 120 is formed on the transfer electrode 118 via an interlayer insulating film 119. A surface protective layer 121 made of, for example, a plasma SiN film is formed on the entire surface including the light shielding film 120 to constitute the CCD solid-state imaging device 100. The P-type region between the light receiving unit 101 and the vertical register 113 constitutes a channel unit 104 that is a read gate.

  The Al light shielding film 120 is selectively etched away on the light receiving portion 101, and the light L enters the light receiving portion 101 through the opening 102 on the light receiving portion 101 formed by this etching removal. It has become. At this time, a part of the Al light shielding film 120 remains on the periphery of the light receiving unit 101.

  In the Al light shielding film 120, the upper part of the Al light shielding film 120 on the periphery of the light receiving portion 101 is formed in an inclined shape 120a.

  In the above-mentioned patent document 1, as the unit pixel unit 100 is miniaturized, the aperture ratio of the aperture 102 decreases and the light receiving sensitivity characteristic deteriorates. Therefore, in order to increase the aperture ratio of the aperture 102, the aperture of the aperture 102 When the size is increased, oblique light enters the charge transfer portion 103 side shielded by the light shielding film 120 from the opening portion 102 and appears as vertical stripes on the display screen, and the smear characteristic is deteriorated.

  On the other hand, it is possible to suppress the deterioration of the light receiving sensitivity characteristic and the smear characteristic due to the miniaturization of the pixel portion, simplify the manufacturing without the formation process of the light shielding film, and eliminate the signal readout control. A solid-state imaging device that can be used is proposed in Patent Document 2.

  FIG. 13 is a plan view showing a configuration example of a main part of a conventional solid-state imaging device disclosed in Patent Document 2, and FIG. 14 is a vertical cross-sectional view of the solid-state imaging device in FIG.

  13 and 14, in the conventional solid-state imaging device 200, a vertical P-type injection region 202 and an N-type injection region 203 constituting each light receiving unit are alternately formed on a semiconductor substrate 201 (or a semiconductor layer). It is arranged in the horizontal direction. On these P-type injection region 202 and N-type injection region 203, horizontal single-layer transparent electrodes 204 to 209 for driving charge transfer are repeatedly arranged in this order in the vertical direction. Furthermore, a polarizing plate 210 that transmits laterally polarized light, a lower transparent electrode 211 for liquid crystal control, a liquid crystal layer 212 made of a twisted nematic (TN) or super twisted nematic (STN) liquid crystal material, The upper transparent electrode 213 for liquid crystal control and the polarizing plate 214 that passes the polarized light in the vertical direction are laminated in this order.

  The polarizing plate 210, the transparent electrode 211, the liquid crystal layer 212, the transparent electrode 213, and the polarizing plate 214 constitute a liquid crystal cell that is a liquid crystal means as an incident light transmission / light shielding control means. In combination with this liquid crystal cell, A solid-state imaging device 200 that captures an image by photoelectrically converting image light from a subject is configured. This liquid crystal cell functions to transmit incident light during exposure and to block incident light during charge transfer.

  Further, a controller (charge transfer control means) (not shown) that can sequentially apply a charge transfer driving voltage to the transparent electrodes 204 to 209 is provided, and in the state where the liquid crystal cell controls the transmission of incident light during exposure, The high and low voltages of the charge transfer drive voltages (for example, “0 V” and “5 V”) output from the controller are applied to the plurality of charge transfer drive transparent electrodes 204 to 209 of the transparent electrodes 204 to 209. By a predetermined voltage application pattern alternately applied to one or a plurality of pixels, the vertical potential type regions 202 in the vertical P-type implantation region 202 and N-type implantation region 203 under the charge transfer driving transparent electrodes 204 to 209 are changed pixel by pixel ( The signal charge for each light receiving part) is accumulated. At the time of the next charge transfer, the high voltage and the low voltage of the charge transfer driving voltages (for example, “0 V” and “5 V”) are set to one of the transparent electrodes 204 to 209 while the liquid crystal cell is controlled to block the incident light. By shifting a plurality of alternating application positions sequentially in a predetermined direction, each pixel unit has a deep potential potential region in the vertical P-type implantation region 202 and N-type implantation region 203 under the charge transfer driving transparent electrodes 204 to 209. The signal charge is held and transferred in a predetermined direction.

With the above configuration, incident light incident from above passes through the upper polarizing plate 214 and is polarized through the vertically polarized light. The polarization in the vertical direction is controlled by a control signal applied to the transparent electrodes 211 and 213 by the switching characteristics of the liquid crystal layer 212 and reaches the lower polarizing plate 210. Since the polarization directions of the polarizing plates 214 and 210 are different from each other by 90 degrees, the switching drive y of the liquid crystal layer 212 causes the light receiving portions (P-type injection region 202 and N-type injection region 203) of the solid-state imaging device 200 to be switched. The incident light can be transmitted and blocked. This eliminates the need to provide a vertical transfer region that is shielded by the light shielding layer. That is, it is not necessary to separately provide a light shielding layer and a vertical transfer region.
Next, as shown in FIG. 14, incident light that has passed through the polarizing plate 214 passes from the transparent electrode 213 through the liquid crystal layer 212, passes through the transparent electrode 211, the polarizing plate 210, and the transparent electrode 209, and remains as it is. To the respective light receiving portions (P-type implantation region 202 and N-type implantation region 203). Each light receiving portion of the solid-state imaging device 200 is provided with a P-type injection region 202 and an N-type injection region 203 in the vertical direction. Here, the photoelectrically converted electrons are N having a lower potential from the P-type injection region 202. Collected and accumulated on the mold injection region 203 side. Note that the N-type implantation region 203 is separated by the P-type implantation region 202. However, the present invention is not limited to this. Even in the same N-type implantation region 203, impurities can be implanted once and the potential potential can be reduced. If peaks and valleys are formed, even in the same N-type injection region 203, the adjacent charge portions can be separated from each other so that signal charges do not mix with each other.

  Finally, with respect to the charge transfer method, electrons (each signal charge) can be transferred by sequentially transferring transfer drive voltages for vertical charge transfer of the transparent electrodes 204 to 209 arranged in the horizontal direction. As described above, since the transparent electrodes 204 to 209 in the horizontal direction are used, charge transfer through a single layer wiring is possible.

  Note that a cholesteric liquid crystal material can be used for the liquid crystal layer 212 in addition to the twisted nematic (TN) or super twisted nematic (STN) liquid crystal material. This cholesteric liquid crystal material has a memory property that can maintain the orientation of liquid crystal molecules semi-permanently even when the drive voltage is cut off, because the helical axis of the liquid crystal molecules is stable in the vertical or horizontal direction. Ultra-low power consumption using the can be realized. Further, the display screen once displayed does not flicker because no drive voltage is applied except for changing the display screen by applying a drive voltage. In addition, since the cholesteric liquid crystal material is used, the polarizing plates 210 and 214 and the color filter (not shown) are not required, so that a thin, light, and bright liquid crystal device (liquid crystal cell; densi paper) like paper is provided. Can be realized. As described above, by using the cholesteric liquid crystal material, the amount of transmitted light can be effectively used, and the light receiving sensitivity can be greatly improved.

JP-A-6-45568 JP 2008-280459 A

  In the conventional solid-state imaging device 200 disclosed in Patent Document 2, since light can be shielded by the liquid crystal layer 212 during charge transfer, it is not necessary to provide a vertical transfer region together with the light shielding layer, and one pixel is formed using a transparent electrode. The area per contact can be increased, the deterioration of the light receiving sensitivity characteristic and the smear characteristic due to the miniaturization of the pixel portion can be suppressed, the manufacturing process can be simplified without the formation process of the light shielding film, and Although signal readout control can be eliminated, one color can be detected by one pixel (predetermined color arrangement of either RGB for each liquid crystal cell) using a cholesteric liquid crystal material instead of a color filter. In reality, it is difficult to capture full-color images of still images and moving images in particular because of the slow response of cholesteric liquid crystals. I had a problem.

  The present invention solves the above-described conventional problems, and suppresses deterioration of light receiving sensitivity characteristics and smear characteristics due to miniaturization of the pixel portion, and simplifies the manufacturing process by eliminating a light shielding film forming process. On the premise that it is possible to eliminate the signal readout control, a plurality of color signals are simultaneously detected by a single pixel unit by a plurality of layers of light-receiving units in place of the cholesteric liquid crystal. A solid-state image sensor that can obtain a clear full-color image of either a still image or a moving image, and a camera using the solid-state image sensor as an image input device in an imaging unit, for example, It is an object of the present invention to provide an electronic information device such as a mobile phone device with a telephone.

  The solid-state imaging device of the present invention is a one-conductivity-type injection region and another-conductivity-type injection region that are alternately arranged adjacent to a semiconductor layer or a semiconductor substrate in one direction, and includes a plurality of layers that photoelectrically convert image light from a subject. One-conductivity-type injection region and other-conductivity type, wherein the photoelectric conversion part is laminated with a transparent layer having a different band gap from that of the photoelectric conversion part, and is disposed in the other direction orthogonal to the one direction. An injection region, a plurality of one-direction transparent electrodes for driving the charge transfer provided on the one-conductivity type injection region and the other-conductivity-type injection region, and the plurality of transparent electrodes for driving the charge transfer, or the Provided on one conductivity type injection region and the other conductivity type injection region and having incident light transmission / light shielding control means for transmitting or shielding incident light, thereby achieving the above object. The

  Preferably, the band gap of the transparent layer in the solid-state imaging device of the present invention is larger than the band gap of the semiconductor layer of the plurality of photoelectric conversion units, and the photoelectric conversion unit is sandwiched between the lower and upper transparent layers. Thus, each signal charge photoelectrically converted by the plurality of photoelectric conversion units is confined for each photoelectric conversion unit.

  Further preferably, from the difference in absorption coefficient depending on the wavelength of light according to the depth of the photoelectric conversion units of the plurality of layers in the solid-state imaging device of the present invention, the plurality of color signals for each pixel unit are converted into the photoelectric conversion of the plurality of layers. It can be calculated based on each signal charge from the unit.

  Furthermore, preferably, when the plurality of layers of photoelectric conversion units in the solid-state imaging device of the present invention has a three-layer structure of the first light receiving unit to the third light receiving unit, the one direction of the first light receiving unit is configured. The photoelectric conversion unit in the conductive type injection region and the other conductive type injection region mainly absorbs blue light having the shortest wavelength of light to perform photoelectric conversion, and constitutes the second light receiving unit in one direction. The photoelectric conversion unit in the other conductivity type injection region mainly absorbs green light having an intermediate wavelength of light and performs photoelectric conversion, and the unidirectional one conductivity type injection region and the other conductivity type constituting the third light receiving unit The photoelectric conversion unit in the injection region mainly absorbs red light having the longest light wavelength and performs photoelectric conversion.

  Further, preferably, when the plurality of layers of photoelectric conversion units in the solid-state imaging device of the present invention have a four-layer structure of the first light receiving unit to the fourth light receiving unit, the one direction of the first light receiving unit is configured. The photoelectric conversion unit in the conductive type injection region and the other conductive type injection region mainly absorbs blue light having the shortest wavelength of light to perform photoelectric conversion, and constitutes the second light receiving unit in one direction. The photoelectric conversion unit in the other conductivity type injection region mainly absorbs green light having an intermediate wavelength of light and performs photoelectric conversion, and the unidirectional one conductivity type injection region and the other conductivity type constituting the third light receiving unit The photoelectric conversion unit in the injection region mainly absorbs red light having a long wavelength of light and performs photoelectric conversion, and photoelectric conversion in the one-direction one-conduction type injection region and the other-conduction type injection region constituting the fourth light receiving unit. The unit absorbs near-infrared light having the longest wavelength of light and performs photoelectric conversion.

  Further preferably, in the solid-state imaging device of the present invention, the semiconductor layer or the semiconductor substrate is a semiconductor having a band gap capable of receiving visible light or near-infrared light, and the transparent layer is a band gap that transmits visible light. have.

  Furthermore, preferably, the plurality of photoelectric conversions are performed by adjusting the number of adjacent high-voltage applied electrodes among the high voltage and the low voltage applied to the plurality of charge transfer driving transparent electrodes in the solid-state imaging device of the present invention. The pixel capacitance can be varied by changing the pixel exposure size in plan view.

  Further, preferably, the photodiode capacitance can be varied by adjusting the film thicknesses of the plurality of photoelectric conversion units in the solid-state imaging device of the present invention.

  Further preferably, the incident light transmission / shielding control means in the solid-state imaging device of the present invention is configured by a liquid crystal means that transmits the incident light during exposure and shields the incident light during charge transfer.

  Further preferably, the liquid crystal means in the solid-state imaging device of the present invention is a polarizing plate that transmits one polarized light in one direction and the other direction orthogonal thereto, a lower transparent electrode for liquid crystal control, a liquid crystal layer, and for liquid crystal control A transparent electrode on the upper side of the first polarizing plate and a polarizing plate through which the other polarized light in one direction and the other direction orthogonal thereto are passed in this order.

  Further preferably, in the solid-state imaging device of the present invention, further provided is a charge transfer control means that can sequentially apply a charge transfer driving voltage to the plurality of charge transfer driving transparent electrodes in one direction. By alternately applying the high voltage and the low voltage of the charge transfer driving voltage to each of the transparent electrodes for driving the charge transfer while the liquid crystal means controls the transmission of incident light, The signal charge for each pixel portion is held in the deep potential potential region in the one-conductivity type injection region in the other direction and the other-conductivity type injection region under the transparent electrode for driving the charge transfer.

  Further preferably, in the solid-state imaging device according to the present invention, a charge transfer control unit is further provided which can sequentially apply a charge transfer driving voltage to the plurality of charge transfer driving transparent electrodes in one direction, In the state where the liquid crystal means is controlled to block incident light, the high voltage and the low voltage of the charge transfer driving voltage are sequentially applied to one or more alternating application positions of the charge transfer driving transparent electrode in a predetermined direction. By shifting to a predetermined potential, the signal charge for each pixel portion is held in the one-potential type injection region in the other direction below the transparent electrode for driving the charge transfer and the deep potential potential region in the other-conductivity type injection region. Charge transfer.

  Further preferably, in the solid-state imaging device of the present invention, the pixel size for holding the signal charge for each of the pixel portions by applying one or a plurality of application positions of the high-voltage transparent electrode for driving the charge transfer. The pixel size of the one-direction implantation region in the other direction or n columns (n is a natural number) of the other-conduction type implantation region and the transparent electrode for driving the charge transfer in the one direction The adjacent semiconductor regions of m (m is a natural number) rows are combined as one pixel portion.

  Further preferably, the high voltage in the solid-state imaging device of the present invention has a plurality of high voltages, and the semiconductor layer or the semiconductor substrate has a high potential so that a potential potential of the semiconductor layer or the semiconductor substrate becomes deep in a charge transfer direction. Apply voltage.

  Further, preferably, the semiconductor layer or the semiconductor substrate in the solid-state imaging device of the present invention has at least one of an N-type semiconductor, a P-type semiconductor, and an intrinsic semiconductor as a conductivity type.

  The electronic information device of the present invention uses the solid-state imaging device of the present invention as an image input device in an imaging unit, and thereby achieves the above object.

  With the above configuration, the operation of the present invention will be described below.

  In the present invention, a multi-layer photoelectric conversion unit that photoelectrically converts image light from a subject, which is a one-conductivity-type injection region and another-conductivity-type injection region that are alternately arranged in one direction on a semiconductor layer or a semiconductor substrate. However, this photoelectric conversion part is laminated with a transparent layer having a different band gap interposed between them, and one conductivity type injection region and another conductivity type injection region respectively disposed in other directions orthogonal to one direction, A plurality of unidirectional charge transfer drive transparent electrodes provided on the one conductivity type injection region and the other conductivity type injection region, and a plurality of charge transfer drive transparent electrodes, which transmit incident light or Incident light transmission / light shielding control means for controlling the light shielding.

  As a result, by providing incident light transmission / light shielding control means for transmitting or shielding incident light, it is possible to suppress deterioration of light receiving sensitivity characteristics and smear characteristics due to miniaturization of the pixel portion and to form a light shielding film. A multi-layer photoelectric conversion unit that photoelectrically converts image light from a subject is a band, assuming that there is no process and manufacturing can be simplified and signal readout control can be eliminated. Since transparent layers having different gaps are stacked between each other, one pixel in which a plurality of color signals are simultaneously detected by a single pixel unit by a plurality of layers of light receiving units instead of cholesteric liquid crystals In addition to obtaining from the signal charges of each layer for each part, it is possible to realize clear full-color imaging for both still images and moving images.

  As described above, according to the present invention, since the incident light transmission / shielding control means for controlling the transmission or shielding of the incident light is provided, the deterioration of the light receiving sensitivity characteristic and the smear characteristic due to the miniaturization of the pixel portion are suppressed, and On the premise that there is no process for forming a light-shielding film, manufacturing can be simplified, and signal readout control can also be eliminated, a multi-layer photoelectric conversion unit that photoelectrically converts image light from a subject is photoelectrically converted. Since a transparent layer having a different band gap is interposed between each layer, a plurality of color signals are simultaneously received by a single pixel unit by a plurality of layers of light receiving units instead of cholesteric liquid crystals. It can be obtained from the detected signal charges of each layer for each pixel portion, and clear full-color imaging can be realized for both still images and moving images.

It is a top view which shows the principal part structural example of the solid-state image sensor in Embodiment 1 of this invention. It is the AB sectional view taken on the line of the solid-state image sensor of FIG. (A)-(c) is a top view which shows typically a charge transfer pattern in case there is much light which enters into the solid-state image sensor of FIG. (A)-(c) is sectional drawing shown typically about each case of a bonding SOI wafer. (A) And (b) is sectional drawing which shows typically the example 1 of the manufacturing method of a bonding SOI wafer. (A) And (b) is sectional drawing which shows typically the example 2 of the manufacturing method of a bonding SOI wafer. FIG. 7 is a plan view showing a configuration example of a main part of a solid-state imaging device according to Embodiment 2 of the present invention. FIG. 8 is a vertical cross-sectional view of the solid-state imaging device in FIG. 7 taken along line AB. (A)-(c) is a top view which shows the CCD transfer example at the time of extending a light reception area | region to 2 columns 3 rows in the solid-state image sensor of FIG. As a fourth embodiment of the present invention, a block diagram illustrating a schematic configuration example of an electronic information device using a solid-state imaging device that performs signal processing of an imaging signal from the solid-state imaging device 1 or 1A according to the first to third embodiments of the present invention as an imaging unit. FIG. It is a top view which shows the principal part structural example of the unit pixel part of the conventional CCD solid-state image sensor currently disclosed by patent document 1. FIG. FIG. 12 is a cross-sectional view of the conventional CCD solid-state imaging device in FIG. 11 taken along line AB. It is a top view which shows the example of a principal part structure of the conventional solid-state image sensor currently disclosed by patent document 2. FIG. FIG. 14 is a longitudinal sectional view taken along line AB of the solid-state imaging device in FIG. 13. It is sectional drawing which shows the principal part structural example of the solid-state image sensor in Embodiment 3 of this invention.

Embodiments 1 and 2 of the solid-state imaging device of the present invention, and implementation of electronic information equipment such as a mobile phone device with a camera using the embodiments 1 and 2 of the solid-state imaging device as image input devices in an imaging unit are described below The third embodiment will be described in detail with reference to the drawings.
(Embodiment 1)
FIG. 1 is a plan view illustrating a configuration example of a main part of a solid-state imaging device according to Embodiment 1 of the present invention, and FIG. 2 is a longitudinal sectional view taken along line AB of the solid-state imaging device in FIG.

1 and 2, the solid-state imaging device 1 according to the first embodiment includes a vertical direction that constitutes a third light receiving unit on a semiconductor substrate 2 (or a semiconductor layer) via a SiO ₂ film 3d that is a transparent insulating layer. P-type implantation regions 4c and N-type implantation regions 5c are alternately arranged adjacent to each other in the lateral direction. The P-type implantation region 4b and the N-type implantation region 5b in the vertical direction constituting the second light receiving part are interposed on the P-type implantation region 4c and the N-type implantation region 5c via the SiO ₂ film 3c, which is a transparent insulating layer. Are alternately arranged in the horizontal direction. The P-type implantation regions 4c and 4b and the N-type implantation regions 5c and 5b are arranged above and below with the SiO ₂ film 3c interposed therebetween. The P-type implantation region 4a and the N-type implantation region 5a in the vertical direction constituting the first light receiving part are interposed on the P-type implantation region 4b and the N-type implantation region 5b via the SiO ₂ film 3b which is a transparent insulating layer. Are alternately arranged in the horizontal direction. These P-type implantation regions 4b and 4a and N-type implantation regions 5b and 5a are arranged vertically with an SiO ₂ film 3b interposed therebetween. These P-type implantation regions 4a to 4c and N-type implantation regions 5a to 5c are arranged so as to coincide with the vertical direction in plan view.

Through the SiO ₂ film 3a is a transparent insulating layer on these P-type implanted region 4a and the N-type implanted regions on 5a, the transparent electrode 6 to 11 lateral monolayer for driving the charge transfer in the vertical direction in this order Arrange them repeatedly. Single-layer transparent electrodes 6 to 11 are arranged in the horizontal direction via the SiO ₂ film 3a on the P-type injection region 4a and the N-type injection region 5a arranged in the vertical direction in plan view. Furthermore, a polarizing plate 12 that transmits polarized light in the horizontal direction, a lower transparent electrode 13 for liquid crystal control, a liquid crystal layer 14 made of a twisted nematic (TN) or super twisted nematic (STN) liquid crystal material, and the like. The upper transparent electrode 15 for controlling the liquid crystal and the polarizing plate 16 that passes the polarized light in the vertical direction are laminated in this order. As the liquid crystal material, a liquid crystal material that is used for a shutter function other than Twist Nematic (TN) or Super Twist Nematic (STN) without using the polarizing plates 12 and 16 and has a high operating speed is used. It can also be selected and used. In this way, a shutter mechanism using a liquid crystal cell is introduced on the upper part of the three-layered structure of Si layers composed of the first light receiving part to the third light receiving part for receiving incident light, and charge transfer is performed by the transparent electrodes 6 to 11. As a result, the opening sizes of the first light receiving portion to the third light receiving portion can be increased as compared with the opening size of the conventional light shielding film, and the light receiving sensitivity characteristic and the smear characteristic can be improved.

  Single-layer transparent electrodes 6 to 11 for charge transfer and three layers of P-type injection regions 4a to 4c and N-type injection regions 5a to 5c thereunder are repeatedly arranged, and a plurality of signal charges for each pixel are arranged. Are transferred in the vertical direction, and then, in the horizontal direction, single-layer transparent electrodes 6 to 11 for charge transfer and three layers of P-type injection regions 4a to 4c and N-type injection regions 5a to 5c thereunder are repeated. The charge is transferred in the horizontal direction. Thereafter, the charge is detected by the charge detector of the three layers, and the signal charge for the three layers is amplified and output as an imaging signal. As will be described in detail later, each of the imaging signals for the three layers is subjected to signal processing by a signal processing unit, and an RGB signal for each pixel can be obtained.

Here, the first light receiving part to the third light receiving part constituted by the P-type injection region 4 and the N-type injection region 5 have a three-layer multilayer structure through respective SiO ₂ films that are transparent insulating layers. Yes. In order to realize a color filter-less image pickup device, this three-layer multilayer structure has three layers of Si layers (P-type injection region and N-type injection region) constituting each light receiving portion (photodiode portion). _In this structure, the _two films 3a to 3d are sandwiched between upper and lower transparent films. Since the band gaps of the SiO ₂ films 3a to 3d are larger than those of the Si layer, the signal charges photoelectrically converted into the three Si layers can be confined. As described above, the transparent layer (here, SiO ₂ film and Si layer) having different band gaps is combined to form three layers of the first light receiving unit to the third light receiving unit (photoelectric conversion unit). In other words, the one-conductivity-type injection region and the other-conductivity-type injection region are each a transparent layer having a band gap different from that of the photoelectric conversion unit between a plurality of photoelectric conversion units each composed of a P-type injection region and an N-type injection region. It has a multilayer laminated structure (three layers here) in which (SiO ₂ films) are combined.

The advantage from the CMOS multi-layer PD when there is no SiO ₂ film between Si layers will be described. The potential difference (between PNs) by ion implantation is about 2-3 eV. If SiO ₂ films are used as the upper and lower films of the light receiving part, the band gap (Band Gap) is 8-9 eV, which is advantageous for securing the Vpd capacity. Since the potential step can be clarified in the vertical space, it works advantageously for securing the capacity in the vertical direction.

On the other hand, the SiO ₂ films 3a to 3d and the three Si layers transmit visible light, and the three Si layers are different in absorption coefficient depending on the wavelength of light according to the depth thereof. It can be set as the light-receiving part (diode part) of each color. For example, the P-type injection region 4a and the N-type injection region 5a in the vertical direction constituting the first light receiving unit mainly absorb blue light (B) having the shortest light wavelength and photoelectrically convert the first light receiving unit. The P-type injection region 4b and the N-type injection region 5b in the vertical direction constituting the two light receiving portions are intermediate layers and mainly absorb green light (G) having an intermediate wavelength of light, and perform photoelectric conversion to obtain a third light reception. The vertical P-type injection region 4c and N-type injection region 5c constituting the part mainly absorb red light (R) having the longest light wavelength and photoelectrically convert it. In this way, full-color imaging of multi-primary colors (in this case, three primary colors RGB) by multilayering the first to third light-receiving portions, which are photoelectric conversion portions, can be performed simultaneously for each pixel.

  The polarizing plate 12, the transparent electrode 13, the liquid crystal layer 14, the transparent electrode 15 and the polarizing plate 16 constitute a liquid crystal cell as liquid crystal means as incident light transmission / light shielding control means. In combination with this liquid crystal cell, A solid-state imaging device 1 having a three-layer stacked structure of a first light receiving portion to a third light receiving portion that captures an image by photoelectrically converting image light from a subject is configured. Due to its switching characteristics, this liquid crystal cell functions to transmit incident light during exposure and to block incident light during charge transfer. This eliminates the need for the conventional element isolation region and the vertical transfer unit, and the light receiving area can be increased correspondingly. Therefore, the deterioration of the light receiving sensitivity characteristic and the smear characteristic due to the miniaturization of the pixel part are suppressed. Further, the manufacturing process can be simplified without the formation process of the light shielding film, and the signal readout control can be eliminated.

  Further, a controller (charge transfer control means) (not shown) that can sequentially apply a charge transfer driving voltage to the transparent electrodes 6 to 11 is provided, and in the state where the liquid crystal cell controls the transmission of incident light during exposure, The high and low voltages of the charge transfer driving voltages (for example, “0V” and “5V”) output from the controller are applied to the plurality of transparent electrodes 6 to 11 for driving the charge transfer. Pixels are formed in the deep potential potential regions of the vertical P-type injection regions 4a to 4c and the N-type injection regions 5a to 5c below the transparent electrodes 6 to 11 for driving charge transfer by a predetermined pattern applied alternately to one or a plurality. The signal charge is accumulated every time (each light receiving portion). At the time of the next charge transfer, with the liquid crystal cell of the liquid crystal layer 14 controlled to block incident light, the high voltage and the low voltage of the charge transfer drive voltage (for example, “0V” and “5V”) are applied to the transparent electrodes 6 to 6. 11. By sequentially shifting one or a plurality of alternating application positions in a predetermined direction, three layers of P-type implantation regions 4a to 4c in the vertical direction below the transparent electrodes 6 to 11 for driving charge transfer and three layers of N-type The signal charge for each pixel portion is held in the deep potential potential region of the injection regions 5a to 5c, and the charge is transferred in a predetermined direction. Thus, the three-layer laminated structure of the first light receiving portion to the third light receiving portion that receives the incident light can sequentially transfer each signal charge in a state where the liquid crystal cell is shielded, and has smear characteristics. Deterioration can be suppressed.

  In this case, by applying one or a plurality of application positions of the high-voltage transparent electrodes 6 to 11, the pixel size in plan view of the three-layer stacked structure of the first light receiving part to the third light receiving part that receives incident light ( Photodiode capacity) can also be controlled. In addition, the photodiode capacitance can be controlled by the multilayer film thickness of the photoelectric conversion unit having a three-layer structure of the first light receiving unit to the third light receiving unit.

With the above configuration, incident light incident from above passes through the upper polarizing plate 16 and is polarized through the vertical polarizing plate 16. The polarization in the longitudinal direction is controlled by a control signal applied to the transparent electrodes 13 and 15 by the switching characteristics of the liquid crystal layer 14, and reaches the lower polarizing plate 12. Since the polarization directions of the polarizing plates 16 and 12 are different from each other by 90 degrees, the incident light to the three-layer laminated structure of the first light receiving part to the third light receiving part of the solid-state imaging device 1 is switched by switching the liquid crystal layer 14. It can be transmitted and blocked.
Next, the incident light that has passed through the polarizing plate 16 passes through the transparent electrode 15, the liquid crystal layer 14, the transparent electrode 13, the polarizing plate 12, and the transparent electrode 11 through the SiO ₂ film 3 a. The first light receiving portion to the third light receiving portion (P-type injection region and N-type injection region) are sequentially reached. Each light-receiving unit of the solid-state imaging device 1 is provided with a three-layer stacked structure of P-type injection regions 4a to 4c and N-type injection regions 5a to 5c in the vertical direction. together are accumulated gathered lower N-type implanted region 4 side, for the band gap of the SiO ₂ film 3 a to 3 d is larger than the Si layer, the first light receiving portion of the third layer by the SiO ₂ film 3 a to 3 d ~ Signal charges photoelectrically converted can be confined in the third light receiving section (each Si layer).

A plurality of N type implantation regions 5a to 5c are separated in the lateral direction by P type implantation regions 4a to 4c. Even in the N-type implantation regions 5a to 5c of the same layer in the vertical direction, the impurity is implanted once or several times (impurity concentration (N-type or P-type) is, for example, 1 × 10 ^18. cm ⁻³ ), and by applying a voltage to the transparent electrodes 6 to 11 to create peaks and troughs of the potential potential, the signal charge is vertical in the vertical direction (column direction) even in the N-type injection regions 5 of the same layer. ) In each of the three layers of the first light receiving part to the third light receiving part (P-type injection region and N-type injection region) in the vertical direction that are adjacent to each other in the vertical direction. The injection regions 5 can be separated from each other.

  Finally, with respect to the charge transfer method, electrons (each signal charge) can be transferred by sequentially transferring transfer drive voltages for vertical charge transfer of the transparent electrodes 6 to 11 arranged in the horizontal direction. As described above, since the transparent electrodes 6 to 11 in the horizontal direction are used, it is possible to transfer charges through a single layer wiring.

In short, light incident from above passes through the polarizing plate 16 and is converted into longitudinally polarized light. The direction of polarization of the vertically polarized light is controlled by the switching characteristics of the liquid crystal layer 14 and reaches the polarizing plate 12. Since the polarization directions of the polarizing plates 16 and 12 are different, the incident light to the first light receiving portion to the third light receiving portion of the solid-state imaging device 1 can be controlled to be exposed or blocked by switching the liquid crystal layer 14. As a result, there is no need to provide a vertical transfer region shielded by the light shielding film as in the prior art.
The light passing through the lower polarizing plate 12 reaches the first light receiving part to the third light receiving part of the solid-state imaging device 1 as it is because the transparent electrodes 6 to 11 are adopted as the electrodes. The first light receiving part to the third light receiving part of the solid-state imaging device 1 are provided with a P-type injection region 4 and an N-type injection region 5 in a vertical direction in a plan view. Here, the photoelectrically converted electrons (signal charges) are The P-type injection region 4 gathers on the N-type injection region 5 side where the potential is low, and imaging is performed for each pixel.
At this time, each of the first to third light receiving portions (each photodiode portion) having a three-layer structure has an absorption coefficient different depending on the wavelength of light depending on the depth direction, and thus each of the photodiodes optimally multilayered In the unit, it is possible to image each color (RGB here) in each layer, and as a result, it is possible to perform multicolor imaging (three primary color imaging) with one pixel. In this case, in the first light receiving part to the third light receiving part having the three-layer structure, although the colors are mixed, it is possible to obtain the R honor, G signal and B signal by signal processing. The signal processing will be described later in detail.

  Finally, with regard to the charge transfer method, each signal charge for each pixel can be transferred by transferring the drive voltage for the transparent electrodes 6 to 11 in the horizontal direction arranged in sequence in the vertical direction in the vertical direction. . In this case, since the transparent electrodes 6 to 11 are used, it is possible to transfer with one-layer wiring.

  Here, an example of the charge transfer method of the solid-state imaging device 1 according to the first embodiment will be described in detail with reference to FIGS. 3 (a) to 3 (c).

  FIGS. 3A to 3C are plan views schematically showing charge transfer patterns in the case where there is a lot of light entering the solid-state imaging device 1 of FIG. Here, the low voltage applied to the transparent electrodes 6 to 11 is “0 V”, and the high voltage is “5 V”.

  First, as indicated by “Time 1” in FIG. 3A, the P-type implantation region 4 and the N-type implantation region 5 are provided in the vertical direction, and are used for charge transfer in the uppermost first row (row R1). When the drive voltage “0V” is applied to the transparent electrode 6 in the horizontal direction, the potential potential of the P-type implantation region 4 is “0V” and the potential potential of the N-type implantation region 5 is “5V”. It has become. At this time, since the drive voltage “5V” is applied to the transparent electrodes 7 and 8 for charge transfer in the second and third rows (rows R2 and 3) from the top, the potential potential of the P-type implantation region 4 is “5V”. Thus, the potential potential of the N-type implantation region 5 becomes “10 V” and becomes deeper and signal charges can be accumulated. Therefore, signal charges are accumulated and held in the N-type injection region 5 (N-type injection regions 5a to 5c) under the deepest "10V" transparent electrodes 7 and 8.

    Next, as shown in “Time 2” of FIG. 3B, the drive voltage “0 V” is applied to the transparent electrodes 6 and 7 for charge transfer in the first and second rows (rows R1 and 2). The potential potential of the P-type implantation region 4 is “0V” and the potential potential of the N-type implantation region 5 is “5V”. At this time, the drive voltage “5V” is applied to the charge transfer transparent electrode 8 in the third row (row R3) from the top, the potential potential of the P-type implantation region 4 is “5V”, and the N-type implantation region 5 The potential potential is “10V”. Further, the drive voltage “0V” is applied to the transparent electrodes 9 and 10 for charge transfer in the fourth and fifth rows (rows R4 and 5) from the top, and the potential potential of the P-type implantation region 4 is “0V”. The potential potential of the N-type implantation region 5 is “5V”. Further, a driving voltage “5V” is applied to the transparent electrode 11 for charge transfer in the sixth row (row R6) from the top, the potential potential of the P-type implantation region 4 is “5V”, and the potential of the N-type implantation region 5 The potential is “10V”.

  Thereafter, in “Time 3” of FIG. 3C, the drive voltage “5 V” is applied to the transparent electrode 6 for charge transfer in the uppermost row (row R1), and the potential potential of the P-type injection region 4 is At “5 V”, the potential potential of the N-type implantation region 5 becomes “10 V”. At this time, the drive voltage “0V” is applied to the transparent electrode 7 for charge transfer in the second row (row R2) from the top, the potential potential of the P-type implantation region 4 is “0V”, and the N-type implantation region 5 The potential potential is “5V”. Further, the driving voltage “5V” is applied to the charge transfer transparent electrodes 8 and 9 in the third and fourth rows (rows R3 and 4) from the top, and the potential potential of the P-type implantation region 4 is “5V”. The potential potential of the N-type implantation region 5 becomes “10 V” and becomes deeper.

  As a result, the signal charge held in the N-type injection region 5 under the transparent electrodes 7 and 8 by “Time 1” is transferred to the N-type injection region 5 under the transparent electrodes 8 and 9 in “Time 3”, and the vertical direction One charge is transferred to each other. This charge transfer is performed in the vertical direction by the first light receiving unit to the third light receiving unit in the entire imaging region, and this is repeated, and then the signal charge transferred in the vertical direction is then transferred in the horizontal direction. become.

  3A to 3C are charge transfer patterns in the case where there is a large amount of incident light, and the application patterns of the drive voltages “0 V” and “5 V” to the respective transparent electrodes are sequentially arranged in the vertical direction. Although the case where the signal charges held in the N-type injection regions 5 under the two rows of transparent electrodes 7 and 8 are sequentially transferred in the vertical direction by shifting the timing is described, the present invention is not limited to this. By sequentially shifting the application patterns of the drive voltages “0V” and “5V” to the respective transparent electrodes in the vertical direction, as a charge transfer pattern in the case where the incident light is small, “Time 1” has three rows with a larger pixel area. The signal charges held in the N-type injection region 5 below the transparent electrodes 7 to 9 may be sequentially transferred in the vertical direction, and four rows of transparent electrodes having a larger pixel area with “Time 1”. 7-10 down May be sequentially charge transfer signal charges held in the mold injection region 5 in the vertical direction.

  Next, the manufacturing method of the solid-state image sensor 1 which combined the liquid crystal cell is demonstrated.

  FIG. 4A to FIG. 4C are cross-sectional views schematically showing each example of a bonded SOI wafer. FIGS. 5A and 5B are cross-sectional views schematically showing Example 1 of the method for manufacturing a bonded SOI wafer.

As shown in FIG. 5A, the surface of the semiconductor substrate 21 (or semiconductor layer) is thermally oxidized to form a SiO ₂ film 22 as a transparent insulating layer, and an Si layer (device layer) 23a is bonded thereon. As shown in FIG. 5B, the bonded Si layer 23 a is polished to a predetermined thickness to form the Si layer 23. As shown in FIG. 4A, P-type impurities and N-type impurities are ion-implanted into the Si layer 23 in a predetermined pattern to a predetermined impurity concentration, thereby forming the above-described third light receiving unit. Directional P-type implantation regions 4c and N-type implantation regions 5c are alternately arranged in the lateral direction.

Similarly, the SiO ₂ film 22 is formed by thermal oxidation on the surfaces of the P-type implantation region 4c and the N-type implantation region 5c in the vertical direction, and a Si layer (device layer) 23a is laminated thereon, and the bonded Si The layer 23a is polished to a predetermined thickness to form the Si layer 23. As shown in FIG. 4B, the Si layer 23 is positioned so as to be aligned with the patterns of the P-type implantation region 4c and the N-type implantation region 5c in the lower vertical direction. P-type impurities and N-type impurities are each ion-implanted at a predetermined impurity concentration, and the above-described vertical P-type implantation regions 4b and N-type implantation regions 5b constituting the second light receiving portion are alternately arranged in the lateral direction. Let

Further, similarly, the SiO ₂ film 22 is formed by thermal oxidation on the surfaces of the P-type implantation region 4b and the N-type implantation region 5b in the vertical direction, and a Si layer (device layer) 23a is laminated thereon, and the bonded Si The layer 23a is polished to a predetermined thickness to form the Si layer 23. As shown in FIG. 4C, the Si layer 23 is positioned so that the positions of the P-type implantation region 4b and the N-type implantation region 5b in the lower vertical direction are aligned, and a predetermined pattern is obtained. Then, the P-type impurity and the N-type impurity are ion-implanted at a predetermined impurity concentration, and the vertical P-type implantation region 4a and the N-type implantation region 5a constituting the first light receiving portion described above are alternately laterally arranged. Arrange.

Next, the SiO ₂ film 3a is formed on the surfaces of the P-type implantation region 4a and the N-type implantation region 5a in the vertical direction constituting the first light receiving portion described above by thermal oxidation, and each of them is formed by using a photolithography technique. The transparent electrodes 6 to 11 in the horizontal direction are continuously formed.

  Further thereon, a liquid crystal cell, which is a liquid crystal means as an incident light transmission / light shielding control means, composed of a polarizing plate 12, a transparent electrode 13, a liquid crystal layer 14, a transparent electrode 15, and a polarizing plate 16 is bonded. As a result, the solid-state imaging device 1 of Embodiment 1 combined with a liquid crystal cell can be manufactured.

5A and 5B, the surface of the semiconductor substrate 21 (or semiconductor layer) is thermally oxidized to form a SiO ₂ film 22 as a transparent insulating layer, and an Si layer (device layer) is formed thereon. On the contrary, as shown in FIGS. 6A and 6B, the surface of the Si layer (device layer) 23a is thermally oxidized to form a SiO ₂ film that is a transparent insulating layer. 22 may be formed, and a semiconductor substrate 21 (or a semiconductor layer) may be bonded thereto.

  Here, in the first light receiving part to the third light receiving part having a three-layer structure, although the colors are mixed, it is possible to obtain the R honor, G signal, and B signal by signal processing. The signal processing in this case will be described in detail below.

In the first to third light receiving portions having a three-layer structure, the first light receiving portion to the third light receiving portion are arranged from the top, the film thickness of the first light receiving portion is x1, and the film thickness of the second light receiving portion is x2. The film thickness of the third light receiving portion is x3. Incident visible light

Is the composition of R, G, B, and the initial value of each

, Absorption coefficient

Each light quantity at depth x when

Then, the following formula (1) is established.

  Now, assuming that the signal amount of each layer is J, the following equation (2) is established.

  Therefore, the signal amount of the first layer is expressed by the following equation (3).

  The signal amount of the second layer is expressed by the following equation (4).

  The signal amount of the third layer is expressed by the following equation (5).

  Here, Ji is obtained as a signal of each layer. From this information, the signal amount of incident light Ii (R, G, B) is obtained.

  In the above equation, since the absorption coefficient of each wavelength and the film thickness of each layer are known, all the coefficients of Ii are obtained.

  Here, the layer number is i, and is replaced by the following formula (6).

  The above formulas (3) to (5) become formula (7).

  The matrix A is represented by the following formula (8).

  Thus, when the matrix A is expressed by the following equation (8) and the vector is represented in brackets, the following equation (9) is obtained.

  Therefore, Expression (10) is obtained.

  Here, when generalization (N-dimensionalization) with respect to multilayering is performed, when a signal is obtained in a layer matched to each wavelength, when layer No is i and wavelength is λ, the above formulas (1) and (2) are The following equations (1 ′) and (2 ′) are obtained.

  The above formula (6) becomes the following formula (6 ′) when C is redefined as the amount of each wavelength λ absorbed in the layer i by the following formula.

  At this time, the component of the matrix A handles the continuous wavelength λ as a discrete amount (determines λ corresponding to the layer i). The above equation (8) becomes the following equation (8 ').

At this time, Formula (9) and Formula (10) do not lose generality in the case of N dimensions. Therefore, according to Equation (10), the λ component of incident visible light

Is obtained. Thereby, RGB signals can be obtained by signal processing from the respective imaging signals for each pixel from the first light receiving unit to the third light receiving unit.

As described above, according to the first embodiment, the P-type injection region 4 and the N-type injection region 5 alternately adjacent to the semiconductor layer or the semiconductor substrate in one direction, and photoelectrically convert the image light from the subject. A plurality of photoelectric conversion portions (three layers of P-type injection regions 4a to 4c and N-type injection regions 5a to 5c) are formed of transparent layers (SiO ₂ films 3a to 3d) having different band gaps from the photoelectric conversion portions. Provided on three layers of P-type implantation region 4 and N-type implantation region 5, which are stacked in an intervening manner and arranged in the other direction orthogonal to one direction, and P-type implantation region 4 and N-type implantation region 5. A plurality of charge transfer driving transparent electrodes 6 to 11 in one direction and a plurality of charge transfer driving transparent electrodes 6 to 11 for transmitting or blocking incident light. Means.

  As a result, the following effects (1) to (8) can be obtained.

  (1) The on-chip (OnChip) process for forming a color filter and a lens thereon is unnecessary because of the structure of the multilayer photodiode section (first light receiving section to third light receiving section). Multi-primary color imaging is possible for each pixel. The capacity of each color can be changed by voltage application control to the transparent electrodes 6 to 11 and the semiconductor layer thickness.

  (2) In the conventional configuration (FIGS. 11 and 12), the PD unit, the vertical transfer unit, and the pixel separation region are necessary. However, in the first embodiment, the vertical transfer unit and the pixel separation region are not necessary. As a result, the opening efficiency on the light receiving portion is improved and the sensitivity characteristics are improved.

  (3) The switching characteristic of the liquid crystal layer 14 allows light to be transmitted or blocked, and the photodiode portion (first light receiving portion to third light receiving portion) and the vertical transfer portion are integrated, and in principle, smear does not occur. .

  (4) Use of the transparent electrodes 6 to 11 enables charge transfer with a single-layer electrode.

  (5) Since the impurity ion implantation process necessary for the pixel portion of the solid-state imaging device 1 is integrated in the vertical direction and is simple, defects such as white defects can be reduced, and high yield can be expected.

  (6) It is unnecessary to move (read out) the signal charge to the vertical transfer unit, and as a result, at least two reference voltages (high voltage and low voltage) are required for the transparent electrodes 6 to 11. Low power consumption can be realized by lowering the voltage.

  (7) Since the applied voltage pattern to the transparent electrodes 6 to 11 is variable, the pixel size can be freely changed.

  (8) Imaging can be performed without a lens.

  Therefore, since the incident light transmission / shielding control means for transmitting or shielding the incident light is provided, the deterioration of the light receiving sensitivity characteristic and the smear characteristic due to the miniaturization of the pixel portion is suppressed, and there is no process for forming the light shielding film. A multi-layer photoelectric conversion unit that photoelectrically converts image light from a subject has a band gap different from that of the photoelectric conversion unit on the premise that manufacturing can be simplified and signal readout control can be eliminated. Since a transparent layer is interposed between each layer, a plurality of color signals are simultaneously detected in one pixel unit by a plurality of layers of light-receiving units instead of cholesteric liquid crystal, and are detected for each pixel unit. While obtaining from the signal charges of each layer, it is possible to realize clear full-color imaging for both still images and moving images.

(Embodiment 2)
In the second embodiment, even when it is darker than in the first embodiment, the planar view area of one pixel unit is increased and the near infrared is detected, so that clear full-color imaging is possible for both still images and moving images. A case will be described as an example.

  FIG. 7 is a plan view showing a configuration example of a main part of a solid-state imaging device according to Embodiment 2 of the present invention. FIG. 8 is a longitudinal sectional view taken along line AB of the solid-state imaging device of FIG. 7 and 8, the same reference numerals are given to the constituent members having the same effects as the constituent members of FIGS. 1 and 2, and the description thereof is omitted.

  7 and 8, the solid-state imaging device 1A according to the second embodiment is different from the solid-state imaging device 1 according to the first embodiment in that one column of the N-type injection region 5 in FIG. In the solid-state imaging device 1A, two rows of N-type injection regions 5 and 5 are formed, and the left and right widths are wide as viewed from above, and a fourth light receiving portion is further provided to form a four-layer stacked structure. Is different. In this case, a thin N-type diffusion layer is formed between the two rows of N-type implantation regions 5 and 5. P-type implantation regions 4 and two rows of N-type implantation regions 5 and 5 are alternately arranged adjacent to one direction in the semiconductor layer. The P-type implantation regions 4 on both sides can separate the two N-type regions 5 and 5 therebetween. As described above, when the object to be imaged is darker, two columns of N-type injection regions 5 and 5 and, for example, three rows of N-type injection regions 5 and 5 under the transparent electrode are combined as one pixel portion in plan view to form a pixel. Large size can be taken. In short, if the voltage is applied by enlarging the N-type region (widening the left and right widths when viewed from above) and increasing the number of transparent electrodes from 2 to 3 rows (or 4 rows or more), a plane is obtained. The viewing pixel size can be made larger.

That is, the vertical P-type injection region 4d and the two rows of N-type injection regions 5d constituting the fourth light receiving portion are disposed on the semiconductor substrate 2 (or the semiconductor layer) via the SiO ₂ film 3e which is a transparent insulating layer. Are alternately arranged in the horizontal direction. A vertical P-type implantation region 4c constituting the third light-receiving portion and two rows are arranged on the P-type implantation region 4d and the two rows of N-type implantation regions 5d via the SiO ₂ film 3d which is a transparent insulating layer. N-type implantation regions 5c are alternately arranged in the lateral direction. These P-type implantation regions 4c and 4d and the two rows of N-type implantation regions 5c and 5d are arranged above and below via the SiO ₂ film 3d. A vertical P-type injection region 4b constituting the second light receiving part and two rows of N-type injections are formed on the P-type injection region 4c and the N-type injection region 5c via the SiO ₂ film 3c which is a transparent insulating layer. The regions 5b are alternately arranged adjacent to each other in the horizontal direction. These P-type implantation regions 4b and 4c and the two rows of N-type implantation regions 5b and 5c are arranged vertically with an SiO ₂ film 3c interposed therebetween. A vertical P-type injection region 4a constituting the first light-receiving portion and two rows of N-type injections are formed on the P-type injection region 4b and the N-type injection region 5b via the SiO ₂ film 3b which is a transparent insulating layer. The regions 5a are alternately arranged adjacent to each other in the horizontal direction. These P-type implantation regions 4a and 4b and the two rows of N-type implantation regions 5a and 5b are arranged above and below with an SiO ₂ film 3b interposed therebetween. These P-type implantation regions 4a to 4d and two rows of N-type implantation regions 5a to 5d are arranged so as to coincide with each other in the vertical direction in plan view.

The first light receiving portion to the fourth light receiving portion configured by the P-type injection region 4 and the N-type injection region 5 each have a four-layer multilayer structure through respective SiO ₂ films that are transparent insulating layers. In order to realize the color filter-less imaging device, this four-layer multi-layer structure has four Si layers (P-type injection region and N-type injection region) constituting each light receiving portion (photodiode portion). _In this structure, the _two films 3a to 3e are sandwiched between upper and lower transparent films. Since the band gap of the SiO ₂ films 3a to 3e is larger than that of the Si layer, the signal charges photoelectrically converted in each of the four Si layers can be confined. As described above, the transparent layer (here, SiO ₂ film and Si layer) having different band gaps is combined to form four layers of the first light receiving part to the fourth light receiving part (photoelectric conversion part). In other words, the one-conductivity-type injection region and the other-conductivity-type injection region are each composed of a plurality of layers (here, four layers) of photoelectric conversion units each composed of a P-type injection region and an N-type injection region. Has a multilayer laminated structure in which transparent layers (SiO ₂ films) having different band gaps are interposed.

The SiO ₂ films 3a to 3e and the four Si layers transmit visible light, and the four Si layers have different absorption coefficients depending on the wavelength of light according to their depths. It can be set as a light receiving part (diode part). For example, the vertical P-type injection region 4a and the two rows of N-type injection regions 5a constituting the first light receiving portion are mainly the uppermost layer and absorb blue light (B) having the shortest wavelength of light to perform photoelectric conversion. The vertical P-type injection region 4b and the two rows of N-type injection regions 5b constituting the second light receiving unit are intermediate layers, and mainly absorb green light (G) having an intermediate wavelength of light, and photoelectrically The vertical P-type injection region 4c and the two rows of N-type injection regions 5c constituting the third light receiving portion are converted into photoelectric layers by mainly absorbing red light (R), which is the lowest layer and has a long wavelength of light. The photoelectric conversion units in the unidirectional P-type injection region 4d and the two rows of N-type injection regions 5d constituting the fourth light receiving unit absorb and absorb near-infrared light having the longest wavelength of light to perform photoelectric conversion. It is like that. As described above, full-color imaging of multi-primary colors (in this case, the three primary colors RGB and near-infrared) by multilayering the first to fourth light-receiving units, which are photoelectric conversion units, can be simultaneously performed for each pixel at once. it can.

  The polarizing plate 12, the transparent electrode 13, the liquid crystal layer 14, the transparent electrode 15 and the polarizing plate 16 of FIG. 8 constitute a liquid crystal cell as liquid crystal means as incident light transmission / light shielding control means, and combined with this liquid crystal cell. A solid-state imaging device 1A having a four-layer stacked structure of a first light receiving portion to a fourth light receiving portion that captures an image by photoelectrically converting image light from a subject is configured. Due to its switching characteristics, this liquid crystal cell functions to transmit incident light during exposure and to block incident light during charge transfer.

  Here, an example of the charge transfer method of the solid-state imaging device 1A of the second embodiment will be described in detail with reference to FIGS. 9A to 9C.

  FIG. 9A to FIG. 9C are plan views showing CCD transfer examples in the case where the light receiving area is expanded to 2 columns and 3 rows in the solid-state imaging device 1A of FIG. Here, the low voltage applied to the transparent electrodes 6 to 11 is “0 V”, and the high voltage is “5 V”.

  As shown in “Time 1” of FIG. 9A, a P-type implantation region 4 and two columns of N-type implantation regions 5 are provided in the vertical direction, and the horizontal direction for charge transfer in the uppermost row R1 is provided. When the drive voltage “0V” is applied to the transparent electrode 6 (R1), the potential potential of the P-type implantation region 4 in the uppermost row R1 is “0V”, and the potential potential of the N-type implantation regions 5 in the two columns Becomes “5V” and deepens. At this time, since the drive voltage “5 V” is applied to the transparent electrodes 7 to 9 for charge transfer in the second to fourth rows (R2 to R4) from the top, the second to fourth rows (R2 to R4) from the top When the potential potential of the P-type implantation region 4 is “5V” and the potential potential of the two rows of N-type implantation regions 5 becomes “10V”, the signal charge can be further deepened and accumulated. Therefore, signal charges are accumulated and held in the two rows of N-type injection regions 5 below the deepest “10 V” transparent electrodes 7 to 9.

  Next, as shown in “Time 2” of FIG. 9B, the driving voltage “0 V” is applied to the transparent electrodes 6 and 7 for charge transfer in the uppermost row R1 and the second row R2, The potential potential of the P-type implantation region 4 in the upper row R1 and the second row R2 is “0V”, and the potential potential of the N-type implantation region 5 in two columns is “5V”. At this time, the drive voltage “5V” is applied to the charge transfer transparent electrodes 8 and 9 in the third and fourth rows R3 and 4 from the top, and the P-type in the third and fourth rows R3 and 4 from the top. The potential potential of the implantation region 4 is “5V”, and the potential potential of the two rows of N-type implantation regions 5 is “10V”. Further, the drive voltage “0 V” is applied to the charge transfer transparent electrodes 10 and 11 in the fifth and sixth rows R5 and R6 from the top, and the P-type in the rows R5 and R6 in the fifth and sixth rows from the top. The potential potential of the implantation region 4 is “0V”, and the potential potential of the two rows of N-type implantation regions 5 is “5V”.

  Thereafter, as shown in “Time 3” of FIG. 9C, the drive voltage “5 V” is applied to the transparent electrode 6 for charge transfer in the uppermost row R1, and the P-type injection region 4 in the uppermost row R1. The potential potential of the N-type implantation regions 5 in the two rows is “10V”. At this time, the drive voltage “0 V” is applied to the transparent electrode 7 for charge transfer in the second row (R2) from the top, and the potential potential of the P-type injection region 4 in the second row R2 from the top is “0 V”. Thus, the potential potential of the two rows of N-type implantation regions 5 is “5V”. Further, a drive voltage “5V” is applied to the charge transfer transparent electrodes 8 to 10 in the third to fifth rows R3 to R5 from the top, so that the P type of the third to fifth rows R3 to R5 is applied. The potential potential of the implantation region 4 is “5V”, and the potential potential of the two rows of N-type implantation regions 5 is “10V”, which is deeper. Therefore, the signal charges held in the two rows of the N-type injection regions 5 under the transparent electrodes 8 to 10 are held in the two rows of the N-type injection regions 5 under the transparent electrodes 8 to 10 and one frame in the vertical direction. Charges are transferred. This charge transfer is performed in the vertical direction on the entire surface of the imaging region, and this is repeated, so that the signal charge transferred in the vertical direction is transferred in the horizontal direction.

  Single-layer transparent electrodes 6 to 11 for charge transfer and four layers of P-type injection regions 4a to 4d and N-type injection regions 5a to 5d thereunder are repeatedly arranged, and a plurality of signal charges for each pixel are arranged. Are transferred in the vertical direction, and then, in the horizontal direction, single-layer transparent electrodes 6 to 11 for charge transfer and four layers of P-type injection regions 4a to 4d and N-type injection regions 5a to 5d thereunder are repeated. The charge is transferred in the horizontal direction. Thereafter, charges are detected by the charge detection units corresponding to the four layers, and the signal charges for the four layers are amplified and output as image pickup signals. As described above, the image signals for the four layers are subjected to signal processing by a predetermined signal processing unit, and RGB signals and near-infrared signals for each pixel can be obtained.

  As described above, according to the second embodiment, the same effect as in the first embodiment can be obtained.

  In particular, according to the second embodiment, even when the image is darker than in the first embodiment, the planar view area of one pixel unit is increased and the near infrared is detected, and either a still image or a moving image is detected. Clear full-color imaging can be realized.

(Embodiment 3)
In the third embodiment, a case of backside illumination in which a transparent electrode for charge transfer exists on the side opposite to the irradiated surface side will be described.

  FIG. 15 is a cross-sectional view illustrating a configuration example of a main part of a solid-state imaging device according to Embodiment 3 of the present invention. In FIG. 15, the same reference numerals are given to the constituent members having the same effects as the constituent members in FIG. 2, and the description thereof is omitted.

As shown in FIG. 15, the back-illuminated solid-state imaging device 1B includes P-type injection regions 4 and N-type injection regions 5 that are alternately arranged adjacent to a semiconductor layer (or a semiconductor substrate) in one direction. A plurality of layers (here, three layers) of photoelectric conversion portions that photoelectrically convert the image light are laminated with transparent layers (SiO ₂ films 3a to 3e) having different band gaps from the photoelectric conversion portions. And three layers of P-type implantation regions 4a to 4c and N-type implantation regions 5a to 5c respectively disposed in the other direction orthogonal to one direction, and a transparent layer on the P-type implantation region 4c and the N-type implantation region 5c ( A transparent layer (SiO ₂ film 3a) is formed on the plurality of unidirectional charge transfer driving transparent electrodes 6 to 11 provided via the SiO ₂ film 3e) and the P-type injection region 4a and the N-type injection region 5a. Controls transmission or blocking of incident light via And a liquid crystal cell as Shako transmission / light shielding control unit.

  The liquid crystal cell includes a polarizing plate 12 that transmits laterally polarized light, a lower transparent electrode 13 for liquid crystal control, a liquid crystal layer 14 made of a twisted nematic (TN) or super twisted nematic (STN) liquid crystal material, and the like. The upper transparent electrode 15 for control and the polarizing plate 16 that passes the polarized light in the vertical direction are laminated in this order. As the liquid crystal material, a liquid crystal material that is used for a shutter function other than Twist Nematic (TN) or Super Twist Nematic (STN) without using the polarizing plates 12 and 16 and has a high operating speed is used. It can also be selected and used. In this way, a shutter mechanism using a liquid crystal cell is introduced on the upper part of the three-layered structure of the Si layer composed of the first light receiving part to the third light receiving part for receiving incident light, and the transparent electrodes 6 to 11 for charge transfer are provided. By the backside irradiation existing on the side opposite to the irradiation surface side, the opening size of the first light receiving part to the third light receiving part is remarkably improved as compared with the opening size of the conventional light shielding film, and the light receiving sensitivity characteristic is improved and smear is achieved. It is possible to improve the characteristics. In this case, the transparent electrodes 6 to 11 may block incident light or may not be transparent electrodes.

  According to the solid-state imaging device 1B of the third embodiment, since the charge transfer transparent electrodes 6 to 11 exist on the opposite side to the irradiation surface side, light is incident on the P-type injection region 4a and the N-type injection region 5a. However, the incident light that has passed through the liquid crystal cell does not need to pass through the transparent electrodes 6 to 11 as in the first and second embodiments, and the use efficiency of the incident light is improved accordingly.

Although not specifically described in the third embodiment, a method of manufacturing three layers of P-type implantation regions 4a to 4c and N-type implantation regions 5a to 5c with an SiO ₂ film interposed therebetween, and transparent electrodes 6 to 11 The charge transfer method is the same as in the first and second embodiments. In short, the present embodiment is the same as Embodiments 1 and 2 except that the transparent electrodes 6 to 11 for charge transfer are located on the opposite side of the irradiation surface side of the P-type injection region 4 and the N-type injection region 5.

(Embodiment 4)
FIG. 10 shows a schematic configuration of an electronic information device using, as an imaging unit, a solid-state imaging device that performs signal processing on an imaging signal from the solid-state imaging device 1 or 1A according to Embodiments 1 to 3 of the present invention as Embodiment 4 of the present invention. It is a block diagram which shows an example.

  In FIG. 10, the electronic information device 90 according to the fourth embodiment performs predetermined signal processing on the imaging signal from any one of the solid-state imaging devices 1, 1 </ b> A, and 1 </ b> B according to the first to third embodiments to obtain a color image signal. A solid-state image pickup device 91 that obtains the image, a memory unit 92 such as a recording medium that can record data after a predetermined signal processing is performed on the color image signal from the solid-state image pickup device 91, and the color from the solid-state image pickup device 91 A display unit 93 such as a liquid crystal display device that can display an image signal on a display screen such as a liquid crystal display screen after performing predetermined signal processing for display, and a color image signal from the solid-state imaging device 91 for communication. After performing the predetermined print signal processing for printing the color image signal from the solid-state imaging device 91 and the communication unit 94 such as a transmission / reception device that can perform communication processing after the signal processing of And an image output unit 95 such as a printer which allows printing process. The electronic information device 90 is not limited to this, but in addition to the solid-state imaging device 91, at least one of a memory unit 92, a display unit 93, a communication unit 94, and an image output unit 95 such as a printer. You may have.

  As described above, the electronic information device 90 includes, for example, a digital camera such as a digital video camera and a digital still camera, an in-vehicle camera such as a surveillance camera, a door phone camera, and an in-vehicle rear surveillance camera, and a video phone camera. An electronic device having an image input device such as an image input camera, a scanner device, a facsimile device, a camera-equipped mobile phone device, and a portable terminal device (PDA) is conceivable.

  Therefore, according to the fourth embodiment, on the basis of the color image signal from the solid-state imaging device 91, the image is displayed on the display screen, or the image is output by the image output unit 95 on the paper. (Printing), communicating this as communication data in a wired or wireless manner, performing a predetermined data compression process in the memory unit 92 and storing it in a good manner, or performing various data processings satisfactorily Can do.

  In the first to third embodiments, the case where the semiconductor layer (or semiconductor substrate) constituting the photoelectric conversion unit is a silicon layer (or silicon substrate) and the transparent layer is a silicon dioxide layer has been described. The semiconductor layer (or semiconductor substrate) constituting the photoelectric conversion unit is not limited to a germanium layer (or germanium substrate), and the transparent layer may be a silicon dioxide layer. In short, a semiconductor layer (or a semiconductor substrate) is a semiconductor (for example, silicon or germanium) having a band gap that can receive visible light or near infrared, and a transparent layer has a band gap that transmits visible light. It is.

  Although not described in detail in Embodiments 1 to 3, by applying one or a plurality of application positions of the transparent electrodes 6 to 11 for high-voltage charge transfer driving, The planar pixel exposure size for holding the signal charge in each photoelectric conversion unit can be controlled, and the pixel exposure size is one-conductivity type injection region in another direction or n (n is a natural number) column in the other conductivity type injection region. The adjacent semiconductor regions of m (m is a natural number) rows of transparent electrodes for driving charge transfer in one direction are combined as one pixel portion. The high voltage may include a plurality of high voltages, and the high voltage may be applied to the semiconductor layer or the semiconductor substrate so that the potential of the semiconductor layer or the semiconductor substrate is gradually deepened in the charge transfer direction. In this case, the semiconductor layer or the semiconductor substrate is at least one of an N-type semiconductor, a P-type semiconductor, and an intrinsic semiconductor.

  As mentioned above, although this invention has been illustrated using preferable Embodiment 1-4 of this invention, this invention should not be limited and limited to this Embodiment 1-4. It is understood that the scope of the present invention should be construed only by the claims. It is understood that those skilled in the art can implement an equivalent range from the description of specific preferred embodiments 1 to 4 of the present invention based on the description of the present invention and the common general technical knowledge. Patents, patent applications, and documents cited herein should be incorporated by reference in their entirety, as if the contents themselves were specifically described herein. Understood.

  The present invention, in combination with a liquid crystal cell, is a solid-state image sensor for a particularly high pixel, high sensitivity, high smear characteristic composed of a semiconductor element that photoelectrically converts image light from a subject and images the solid-state image sensor. Digital cameras such as digital video cameras and digital still cameras used as image input devices as image input devices, image input cameras, scanner devices, facsimile devices, DSCs, surveillance cameras, television telephone devices, mobile phone devices with cameras, etc. In the field of electronic information equipment, since incident light transmission / shielding control means for transmitting or shielding incident light is provided, it is possible to suppress deterioration of light receiving sensitivity characteristics and smear characteristics due to miniaturization of the pixel portion, and to prevent light shielding film Manufacturing process can be simplified, and signal readout control can be eliminated. As a premise, multiple layers of photoelectric conversion units that photoelectrically convert image light from the subject are stacked with a transparent layer having a band gap different from that of the photoelectric conversion unit. Instead, a plurality of color signals are obtained from the signal charges of each layer for each pixel unit detected simultaneously by a single pixel unit by a multi-layered light receiving unit, and can be either a still image or a moving image. Clear full-color imaging can be realized.

1, 1A, 1B Solid-state imaging device 2 Semiconductor substrate (or semiconductor layer)
3a-3e SiO ₂ film (transparent layer)
4, 4a to 4d P-type injection region 5, 5a to 5d N-type injection region 6 to 11 Transparent electrode 12 Polarizing plate 13 Transparent electrode 14 Liquid crystal layer 15 Transparent electrode 16 Polarizing plate 21 Semiconductor substrate (or semiconductor layer)
22 SiO ₂ film 23a, 23 Si layer 90 Electronic information device 91 Solid-state imaging device 92 Memory unit 93 Display unit 94 Communication unit 95 Image output unit

Claims (16)

A solid-state imaging device including a photoelectric conversion region formed on a semiconductor layer or a semiconductor substrate ,
Photoelectric conversion region, chromatic photoelectric conversion unit of the plurality of layers for photoelectrically converting an image light from an object, a stacked structure stacked by interposing a transparent layer having different band gaps between the respective the photoelectric conversion portion And
Each of the photoelectric conversion portions of the plurality of layers is
Alternately in one direction are arranged adjacent to, has one conductivity type implanted regions and other conductive type implanted region extending along each of the respective laminated structure in another direction perpendicular to said one direction,
The solid-state image sensor is
The photoelectric conversion region, and the electrode of the charge transfer driving of several provided to extend in the one direction on the surface opposite to the irradiated surface of the image light is incident,
A solid-state imaging device having incident light transmission / shielding control means that is provided on the irradiation surface of the photoelectric conversion region and controls transmission or shielding of the image light. The larger than the band gap of the semiconductor layer of the photoelectric conversion portion of the band gap of the transparent layer the plurality of layers, the photoelectric conversion portion is sandwiched on the transparent layer of the lower layer and the upper layer, the photoelectric conversion unit of the plurality several layers The solid-state imaging device according to claim 1, wherein each signal charge obtained by photoelectric conversion is confined for each photoelectric conversion unit.   From the difference in absorption coefficient depending on the wavelength of light according to the depth of the multiple layers of photoelectric conversion units, multiple color signals for each pixel unit can be calculated based on each signal charge from the multiple layers of photoelectric conversion units The solid-state imaging device according to claim 1. The photoelectric conversion region, have a three-layer structure in which the photoelectric conversion unit are three-layer, the first photoelectric conversion unit in the photoelectric conversion region of the three-layer structure, the wavelength of light is the shortest blue light the mainly absorbed by photoelectric conversion, a second photoelectric conversion unit in the photoelectric conversion region of the three-layer structure, when the wavelength of the light is mainly absorbed intermediate green light to photoelectric conversion, the 3-layer The solid-state imaging device according to claim 3 , wherein the third photoelectric conversion unit constituting the photoelectric conversion region of the structure mainly absorbs red light having the longest wavelength of light and performs photoelectric conversion. The photoelectric conversion area is, have a four-layer structure wherein the photoelectric conversion unit are stacked four layers, a first photoelectric conversion unit in the photoelectric conversion region of the four-layer structure, the wavelength of light is the shortest blue photoelectrically converted mainly absorb light, second photoelectric conversion unit in the photoelectric conversion region of the four-layer structure, when the wavelength of the light is mainly absorbed intermediate green light to photoelectric conversion, the 4 third photoelectric conversion unit in the photoelectric conversion region of the layer structure, when the wavelength of the light is mainly absorbed long red light to photoelectric conversion, a fourth photoelectric included in the photoelectric conversion region of the four-layer structure conversion The solid-state imaging device according to claim 3, wherein the unit photoelectrically converts near-infrared light having the longest light wavelength. The photoelectric conversion region formed in the semiconductor layer or the semiconductor substrate has a band gap that can receive visible light or near infrared light, and the transparent layer has a band gap that transmits visible light. Solid-state image sensor. The multiple charge transfer control means is further provided for enabling sequentially applied to the charge transfer drive voltage to the electrodes of the charge transfer driving, using the charge transfer control means, the electrode for charge transfer driving the plurality of By adjusting the number of adjacent electrodes to be applied between the high voltage and the low voltage to be applied, the pixel exposure size in plan view of the plurality of photoelectric conversion units is changed , and the adjacent one-conductivity-type injection region and the adjacent ones The solid-state imaging device according to claim 1, wherein a photodiode capacitance that is a junction capacitance with another conductivity type injection region can be changed . The film thickness before Symbol plurality of photoelectric conversion portions, according to claim 1 which is one of the factors that determine the photodiode capacitance is the junction capacitance between the one conductivity type implantation region adjacent to the other conductivity type implanted region Solid-state image sensor. 2. The solid-state imaging device according to claim 1, wherein the incident light transmission / shielding control unit is configured by a liquid crystal unit that transmits the image light during exposure and shields the image light during charge transfer. Said liquid crystal means, a second direction one pass polarization polarizing plate orthogonal to the first direction and the first direction, the lower side of the transparent electrode for liquid crystal control, the liquid crystal layer, the upper liquid crystal control transparent electrode, the first one-way and the solid-state imaging device according to claim 9 having the other of passing polarized light formed by laminating a polarizing plate in this order of the second direction. Charge transfer control means for sequentially applying a charge transfer drive voltage to the plurality of charge transfer drive electrodes is further provided, and the charge transfer is performed while the liquid crystal means controls transmission of the image light during exposure. by applying a high voltage alternating low voltage to one or more each of the charge transfer driving electrode of the driving voltage, prior Symbol one conductivity type on the electrodes for driving the charge transfer implanted region and the The solid-state imaging device according to claim 9, wherein signal charges for each pixel unit are held in a deep potential potential region in the other conductivity type injection region. Charge transfer control means for sequentially applying a charge transfer drive voltage to the plurality of charge transfer drive electrodes in one direction is further provided, and the liquid crystal means controls the image light to be blocked during the charge transfer. The one or more alternating application positions of the high voltage and the low voltage of the charge transfer drive voltage are sequentially shifted in a predetermined direction on the charge transfer drive electrode. the solid-state imaging device according to claim 9 or 11, pre-Symbol holds one conductivity type implantation region and the other conductivity type implantation among deep potential level area to the pixel unit every signal charge area charge transfer in a predetermined direction. By adjusting the position of the charge transfer driving electrode the high voltage is applied, the provided pixels sized to hold the signal charges of each pixel portion is controllable, the pixel size, the other (n is a natural number) n of the one conductivity type implanted region or the other conductivity type implantation region extending in a direction and columns, m of the charge transfer driving electrodes extending in the one direction (m is a natural number) and a row intersect The solid-state imaging device according to claim 11, wherein the region is controlled with one pixel unit. As the high voltage, a plurality of different high voltage potentials is, the solid-state imaging device according to claim 13 in which the potential level of the photoelectric conversion region Ru is granted to the photoelectric conversion region to be deeper in the direction of charge transfer. Wherein the semiconductor layer or the semiconductor substrate for forming the photoelectric conversion region, N-type semiconductor, solid-state imaging according to the semiconductor layer or the claims 1 semiconductor substrate that is used consists of at least one of P-type semiconductor and an intrinsic semiconductor element.   An electronic information device using the solid-state imaging device according to claim 1 as an image input device in an imaging unit.

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