JP5865986B2 - Pressure sensor and microphone - Google Patents

Description

  Embodiments described herein relate generally to a pressure sensor and a microphone.

  In a capacitive microphone that converts sound into an electric signal by changing the capacitance, the entire diaphragm becomes a part of the electrode. Therefore, when the microphone is downsized, the area of the electrode is reduced together with the diaphragm, and the sensitivity is deteriorated.

JP 2007-180201 A

  Embodiments of the present invention provide a highly sensitive pressure sensor and microphone.

According to the embodiment of the present invention, there is provided a pressure sensor including a base, a first sensor unit provided on the base, and a processing circuit. The first sensor unit is provided on a flexible first transducer thin film having a first film surface, and on the first film surface at a position different from the center of gravity of the first film surface. A first strain sensing element including: a second magnetic layer; a nonmagnetic first intermediate layer provided between the first magnetic layer and the second magnetic layer; and the first film surface. And provided at a position that is separated from the first strain sensing element and different from the center of gravity, and is provided between the third magnetic layer, the fourth magnetic layer, and the third magnetic layer and the fourth magnetic layer. A second strain sensing element including a nonmagnetic second intermediate layer. The first magnetic layer, the first intermediate layer, and the second magnetic layer are arranged in a direction perpendicular to the first film surface. The third magnetic layer, the second intermediate layer, and the fourth magnetic layer are arranged in a direction perpendicular to the first film surface. The magnetization direction of the third magnetic layer is along one of the magnetization direction of the first magnetic layer and the magnetization direction of the second magnetic layer. The magnetization direction of the fourth magnetic layer is along the other of the magnetization direction of the first magnetic layer and the magnetization direction of the second magnetic layer. The second strain sensing element is aligned with the first strain sensing element along an edge of the first film surface. A straight line connecting the first strain sensing element and the center of gravity is inclined with respect to a straight line connecting the second strain sensing element and the center of gravity. The processing circuit weights and adds the first signal obtained from the first strain sensing element and the second signal obtained from the second strain sensing element.

It is a typical perspective view showing the pressure sensor concerning a 1st embodiment. It is a typical top view showing a part of pressure sensor concerning a 1st embodiment. FIG. 3A to FIG. 3D are schematic plan views showing a part of the pressure sensor according to the first embodiment. It is a typical perspective view showing some pressure sensors concerning a 1st embodiment. Fig.5 (a)-FIG.5 (c) are typical perspective views which show operation | movement of the pressure sensor which concerns on 1st Embodiment. FIG. 6A and FIG. 6B are schematic perspective views showing a part of the pressure sensor according to the first embodiment. FIG. 7A and FIG. 7B are schematic views showing the operation of the pressure sensor according to the first embodiment. It is a typical top view which shows the pressure sensor which concerns on 2nd Embodiment. It is a typical top view showing another pressure sensor concerning a 2nd embodiment. It is a typical top view showing another pressure sensor concerning a 3rd embodiment. It is a typical top view showing another pressure sensor concerning a 3rd embodiment. It is a typical top view showing another pressure sensor concerning a 3rd embodiment. It is a typical top view showing the pressure sensor concerning a 4th embodiment. It is a flowchart figure which shows the manufacturing method of the pressure sensor which concerns on 5th Embodiment. FIG. 15A to FIG. 15D are schematic perspective views in order of steps showing the method for manufacturing the pressure sensor according to the fifth embodiment. It is a typical perspective view which illustrates the pressure sensor concerning a 6th embodiment. FIG. 17A to FIG. 17C are schematic views showing a pressure sensor according to the sixth embodiment. FIG. 18A and FIG. 18B are schematic views showing a method for manufacturing a pressure sensor according to the seventh embodiment. FIG. 19A and FIG. 19B are schematic views showing a method for manufacturing a pressure sensor according to the seventh embodiment. FIG. 20A and FIG. 20B are schematic views showing a method for manufacturing a pressure sensor according to the seventh embodiment. FIG. 21A and FIG. 21B are schematic views showing a method for manufacturing a pressure sensor according to the seventh embodiment. FIG. 22A and FIG. 22B are schematic views showing a method for manufacturing a pressure sensor according to the seventh embodiment. FIG. 23A and FIG. 23B are schematic views showing a method for manufacturing a pressure sensor according to the seventh embodiment. FIG. 24A and FIG. 24B are schematic views showing a method for manufacturing a pressure sensor according to the seventh embodiment. FIG. 25A and FIG. 25B are schematic views showing a method for manufacturing a pressure sensor according to the seventh embodiment. FIG. 26A and FIG. 26B are schematic views showing a manufacturing method of the pressure sensor according to the seventh embodiment. FIG. 27A and FIG. 27B are schematic views showing a method for manufacturing a pressure sensor according to the seventh embodiment. FIG. 28A and FIG. 28B are schematic views showing a method for manufacturing a pressure sensor according to the seventh embodiment. FIG. 29A and FIG. 29B are schematic views showing a method for manufacturing a pressure sensor according to the seventh embodiment. It is a flowchart figure which shows the manufacturing method of the pressure sensor which concerns on 7th Embodiment. It is a schematic diagram which shows the microphone which concerns on 8th Embodiment.

Each embodiment will be described below with reference to the drawings.
Note that the drawings are schematic or conceptual, and the size ratio between the parts is not necessarily the same as the actual one. Further, even when the same part is represented, the dimensions and ratios may be represented differently depending on the drawings.
Note that, in the present specification and each drawing, the same elements as those described above with reference to the previous drawings are denoted by the same reference numerals, and detailed description thereof is omitted as appropriate.

(First embodiment)
FIG. 1 is a schematic perspective view illustrating the configuration of the pressure sensor according to the first embodiment.
In FIG. 1, in order to make the drawing easier to see, the insulating portion is omitted and the conductive portion is mainly drawn.
FIG. 2 is a schematic plan view illustrating the configuration of a part of the pressure sensor according to the first embodiment.

  As shown in FIG. 1, the pressure sensor 310 according to the present embodiment includes a base 71a and a sensor unit 72 (first sensor unit 72A). The sensor unit 72 is provided on the base 71a. The sensor unit 72 (first sensor unit 72A) includes a first transducer thin film 64A, a first fixing unit 67A, and a first strain sensing element 50A. The first transducer thin film 64A has a film surface 64a (first film surface). The first transducer thin film 64A is flexible. The first transducer thin film 64A has a function of bending when pressure is applied from the outside and transducing the strain sensing element 50 formed thereon as a strain. The external pressure includes not only the pressure itself but also a pressure generated by sound waves or ultrasonic waves. In the case of sound waves or ultrasonic waves, the pressure sensor will function as a microphone.

  The thin film that becomes the transducer thin film 64 may be continuously formed outside the portion bent by the external pressure. In the present specification, a portion surrounded by a fixed end, having a certain thickness and being thinner than the fixed end and being bent by an external pressure is called a transducer thin film.

  The first fixing portion 67A fixes the first transducer thin film 64A to the base 71a. The first strain sensing element 50A is provided on the first film surface. The configuration of the first strain sensing element 50A will be described later.

  A hollow portion 70 is formed in the base 71a. A portion of the base 71 a other than the cavity 70 corresponds to the non-cavity 71. The non-hollow part 71 is juxtaposed with the hollow part 70.

  The cavity portion 70 is a portion where the material forming the non-cavity portion 71 is not provided. The cavity 70 may be in a vacuum (a low pressure state lower than 1 atm), and the cavity 70 may be filled with a gas such as air or an inert gas. Further, the hollow portion 70 may be filled with a liquid. A deformable substance may be disposed in the cavity 70 so that the first transducer thin film 64A can be bent.

  When pressure (including sound, ultrasonic waves, etc.) is applied to the first transducer thin film 64A from the outside, the first transducer thin film 64A bends. As a result, strain is generated in the strain sensor (sensor unit 72) disposed on the first transducer thin film 64A. In this way, the first transducing thin film 64A transmits (transduces) the pressure signal to the sensor unit 72, and the pressure signal is converted into a distortion signal in the sensor unit 72.

  The first transducer thin film 64A is disposed above the cavity 70, and the first transducer thin film 64A is fixed to the base 71a by the first fixing portion 67A.

  Here, a plane parallel to the film surface 64a (first film surface) is defined as an XY plane. When the film surface 64a cannot be obtained as a flat surface, the plane including the edge 64eg of the film surface 64a is defined as an XY plane. A direction perpendicular to the XY plane is taken as a Z-axis direction.

  As shown in FIGS. 1 and 2, in the pressure sensor 310, the base 71a, the transducer thin film 64 (first transducer thin film 64A), the first fixing portion 67A (fixing portions 67a to 67d), the first strain sensing element. 50A, a first wiring 57 (wirings 57a to 57d) and a second wiring 58 (wirings 58a to 58d) are provided. In this example, a plurality of strain sensing elements 50 (strain sensing elements 50a to 50d) are provided. The first strain sensing element 50A is one of the plurality of strain sensing elements 50. For example, the strain sensing element 50a is used as the first strain sensing element 50A. However, in the embodiment, one strain sensing element 50 (first strain sensing element 50A) may be provided.

  That is, the sensor unit 72 (first sensor unit 72A) further includes a second strain sensing element 50B. The second strain sensing element 50B is provided on the film surface 64a. For example, a strain sensing element 50b is used as the second strain sensing element 50B. In this example, a straight line passing through the first strain sensing element 50A and the second strain sensing element 50B passes through the center of gravity 64b of the film surface 64a. Specifically, a straight line passing through the center of gravity of the first strain sensing element 50A and the center of gravity of the second strain sensing element 50B passes through the center of gravity 64b.

  In this example, four strain sensing elements 50 (strain sensing elements 50a to 50d) are provided. The strain sensing elements 50a to 50d are arranged on the film surface 64a along the portion on the −X axis direction side from the center (corresponding to the center of gravity 64b) of the straight line 64d. The strain sensing element 50 is disposed at a position different from the position of the center of gravity 64b of the film surface 64a of the transducer thin film 64.

FIG. 3A to FIG. 3D are schematic plan views illustrating the configuration of part of the pressure sensor according to the first embodiment.
These drawings illustrate the shape of the film surface 64 a of the transducer thin film 64.
As shown in FIGS. 3A to 3D, the shape of the film surface 64a (flexible portion) of the transducer thin film 64 is a circle, a flat circle (including an ellipse), a square, a rectangle, or the like. . In such a case, the center of gravity of the film surface 64a is the center of a circle, the center of an ellipse, the center of a square diagonal line, or the center of a rectangular diagonal line, respectively.

  The transducer thin film 64 is formed of, for example, an insulating layer. Alternatively, the transducer thin film 64 is formed of, for example, a metal material. The transducer thin film 64 includes, for example, silicon oxide or silicon nitride. The thickness of the transducer thin film 64 is, for example, not less than 200 nm and not more than 3 μm. Preferably, it is 300 nm or more and 1.5 μm or less. The diameter of the transducer thin film 64 is not less than 1 μm and not more than 600 μm, for example. More preferably, it is 60 μm or more and 600 μm or less. For example, the transducer thin film 64 is flexible in the Z-axis direction perpendicular to the film surface 64a.

In this example, the first fixing portion 67A includes fixing portions 67a to 67d.
As shown in FIG. 2, in this example, the fixing parts 67 a and 67 c are arranged at the intersections of the straight line 64 c and the edge part 64 eg of the transducer thin film 64. The straight line 64c passes through the center of gravity 64b of the film surface 64a of the transducer thin film 64 and is parallel to the Y-axis direction. The fixing part 67b and the fixing part 67d are arranged at the intersection of the straight line 64d and the edge part 64eg of the transducer thin film 64. The straight line 64d passes through the center of gravity 64b of the film surface 64a of the transducer thin film 64 and is parallel to the X-axis direction. The fixing parts 67a to 67d fix the transducer thin film 64 to the non-hollow part 71 (base 71a).
The fixing portions 67a to 67d include, for example, silicon that is a part of the substrate material, the same material as the transducer thin film formed on the substrate material, and the like. The fixing portions 67a to 67d are portions formed with a thickness larger than that of the transducer thin film 64 so that they are not easily bent even when an external pressure is applied.

  One end of each of the strain sensing elements 50a to 50d is connected to each of the first wirings 57 (for example, the wirings 57a to 57d). The other ends of the strain sensing elements 50a to 50d are connected to the second wirings 58 (for example, 58a to 58d).

  The first wiring 57 and the second wiring 58 extend from the strain sensing element 50 toward the base 71a through the fixing portion 67 or through the fixing portion 67.

FIG. 4 is a schematic perspective view illustrating the configuration of a part of the pressure sensor according to the first embodiment.
FIG. 4 shows an example of the configuration of the strain sensing element 50. As illustrated in FIG. 3, the strain resistance change unit 50 s (the strain detection element 50 and the first strain detection element 50 </ b> A) includes, for example, the first magnetic layer 10, the second magnetic layer 20, and the first magnetic layer. 10 and an intermediate layer 30 (first intermediate layer) provided between the first magnetic layer 20 and the second magnetic layer 20. The intermediate layer 30 is a nonmagnetic layer. The configuration of each of the plurality of strain sensing elements 50 is the same as described above. For example, the second strain sensing element 50B includes a third magnetic layer 10B, a fourth magnetic layer 20B, and a nonmagnetic second intermediate layer 30B provided between the third magnetic layer 10B and the fourth magnetic layer 20B. And including. The configuration of the third magnetic layer 10 </ b> B is the same as the configuration of the first magnetic layer 10. The configuration of the fourth magnetic layer 20B is the same as the configuration of the second magnetic layer 20. The configuration of the second intermediate layer 30B is the same as the configuration of the first intermediate layer 30. The configurations of the first magnetic layer 10, the second magnetic layer 20, and the intermediate layer 30 described below can be applied to the configurations of the third magnetic layer 10B, the fourth magnetic layer 20B, and the second intermediate layer 30B.

  In this example, the first magnetic layer 10 is a magnetization free layer. The second magnetic layer 20 is, for example, a magnetization fixed layer or a magnetization free layer.

  Hereinafter, an example of the operation of the strain sensing element 50 will be described in the case where the second magnetic layer 20 is a magnetization fixed layer and the first magnetic layer 10 is a magnetization free layer. In the strain sensing element 50, the “inverse magnetostriction effect” possessed by the ferromagnetic material and the “MR effect” manifested in the strain resistance change unit 50s are utilized.

  The “MR effect” is a phenomenon in which, in a laminated film having a magnetic material, when an external magnetic field is applied, the value of the electric resistance of the laminated film changes due to a change in magnetization of the magnetic material. The MR effect includes, for example, a GMR (Giant magnetoresistance) effect or a TMR (Tunneling magnetoresistance) effect. By flowing a current through the strain resistance changing portion 50s, the MR effect is manifested by reading the change in the relative angle of the magnetization direction as a change in electrical resistance. For example, a tensile stress is applied to the strain resistance change unit 50 s based on the stress applied to the strain sensing element 50. When the magnetization direction of the first magnetic layer 10 (magnetization free layer) and the direction of the tensile stress applied to the second magnetic layer 20 are different, the MR effect is manifested by the inverse magnetostriction effect. ΔR / R is referred to as “MR change rate”, where R is the resistance in the low resistance state and ΔR is the amount of change in electrical resistance that changes due to the MR effect.

FIG. 5A to FIG. 5C are schematic perspective views illustrating the operation of the pressure sensor according to the first embodiment.
These drawings illustrate the state of the strain sensing element 50. These drawings illustrate the relationship between the magnetization direction in the strain sensing element 50 and the direction of tensile stress.

  FIG. 5A shows a state where no tensile stress is applied. At this time, in this example, the magnetization direction of the second magnetic layer 20 (magnetization fixed layer) is the same as the magnetization direction of the first magnetic layer 10 (magnetization free layer).

  FIG. 5B shows a state where tensile stress is applied. In this example, tensile stress is applied along the X-axis direction. For example, due to the deformation of the transducer thin film 64, for example, a tensile stress along the X-axis direction is applied. That is, the tensile stress is applied in a direction orthogonal to the magnetization directions (Y-axis direction in this example) of the second magnetic layer 20 (magnetization fixed layer) and the first magnetic layer 10 (magnetization free layer). At this time, the magnetization of the first magnetic layer 10 (magnetization free layer) rotates so as to be in the same direction as the direction of the tensile stress. This is called “reverse magnetostriction effect”. At this time, the magnetization of the second magnetic layer 20 (magnetization fixed layer) is fixed. Accordingly, the magnetization of the first magnetic layer 10 (magnetization free layer) and the magnetization direction of the second magnetic layer 20 (magnetization fixed layer) and the magnetization direction of the first magnetic layer 10 (magnetization free layer) are rotated. And the relative angle changes.

  In this figure, the magnetization direction of the second magnetic layer 20 (magnetization fixed layer) is shown as an example, and the magnetization direction may not be the direction shown in this figure.

  In the inverse magnetostriction effect, the easy axis of magnetization changes depending on the sign of the magnetostriction constant of the ferromagnetic material. Many materials exhibiting a large inverse magnetostrictive effect have a positive sign for the magnetostriction constant. When the magnetostriction constant has a positive sign, the direction in which tensile stress is applied as described above is the easy axis of magnetization. At this time, as described above, the magnetization of the first magnetic layer 10 (magnetization free layer) rotates in the direction of the easy axis of magnetization.

  For example, when the magnetostriction constant of the first magnetic layer 10 (magnetization free layer) is positive, the magnetization direction of the first magnetic layer 10 (magnetization free layer) is set to a direction different from the direction in which tensile stress is applied. . On the other hand, when the magnetostriction constant is negative, the direction perpendicular to the direction in which the tensile stress is applied becomes the easy axis of magnetization.

  FIG. 5C illustrates a state where the magnetostriction constant is negative. In this case, the magnetization direction of the first magnetic layer 10 (magnetization free layer) is set to a direction different from the direction perpendicular to the direction in which the tensile stress is applied (X-axis direction in this example).

  In this figure, the magnetization direction of the second magnetic layer 20 (magnetization fixed layer) is shown as an example, and the magnetization direction may not be the direction shown in this figure.

  Depending on the angle between the magnetization of the first magnetic layer 10 and the magnetization of the second magnetic layer 20, the electrical resistance of the strain sensing element 50 (strain resistance changing unit 50s) changes due to, for example, the MR effect.

  The magnetostriction constant (λs) indicates the magnitude of the shape change when an external magnetic field is applied and the ferromagnetic layer is saturated and magnetized in a certain direction. If the length is L in the absence of an external magnetic field and changes by ΔL when an external magnetic field is applied, the magnetostriction constant λs is expressed by ΔL / L. Although the amount of change varies depending on the magnitude of the magnetic field, the magnetostriction constant λs is expressed as ΔL / L in a state where a sufficient magnetic field is applied and magnetization is saturated.

  For example, when the second magnetic layer 20 is a magnetization fixed layer, Fe, Co, Ni, or an alloy material thereof is used for the second magnetic layer 20. The second magnetic layer 20 is made of a material obtained by adding an additive element to the above material. For the second magnetic layer 20, for example, a CoFe alloy, a CoFeB alloy, a NiFe alloy, or the like can be used. The thickness of the second magnetic layer 20 is, for example, not less than 2 nanometers (nm) and not more than 6 nm.

A metal or an insulator can be used for the intermediate layer 30. For example, Cu, Au, Ag, or the like can be used as the metal. In the case of metal, the thickness of the intermediate layer 30 is, for example, 1 nm or more and 7 nm or less. As the insulator, for example, magnesium oxide (such as MgO), aluminum oxide (such as Al ₂ O ₃ ), titanium oxide (such as TiO), and zinc oxide (such as ZnO) can be used. In the case of an insulator, the thickness of the intermediate layer 30 is, for example, 1 nm or more and 3 nm or less.

  When the first magnetic layer 10 is a magnetization free layer, for example, at least one of Fe, Co, and Ni, or an alloy material containing at least one of them is used for the first magnetic layer 10. A material obtained by adding an additive element to the above material is used.

A material having a large magnetostriction is used for the first magnetic layer 10. Specifically, a material having an absolute value of magnetostriction larger than 10 ⁻⁵ is used. As a result, the magnetization changes sensitively with respect to strain. For the first magnetic layer 10, a material having a positive magnetostriction may be used, or a material having a negative magnetostriction may be used.

For the first magnetic layer 10, for example, an FeCo alloy, a NiFe alloy, or the like can be used. In addition, the first magnetic layer 10 includes an Fe—Co—Si—B alloy, a Tb—M—Fe alloy exhibiting λs> 100 ppm (M is Sm, Eu, Gd, Dy, Ho, Er), Tb— M1-Fe-M2 alloy (M1 is Sm, Eu, Gd, Dy, Ho, Er, M2 is Ti, Cr, Mn, Co, Cu, Nb, Mo, W, Ta), Fe-M3-M4- B alloy (M3 is Ti, Cr, Mn, Co, Cu, Nb, Mo, W, Ta, M4 is Ce, Pr, Nd, Sm, Tb, Dy, Er), Ni, Al-Fe and ferrite ( Fe ₃ O ₄ , (FeCo) ₃ O ₄ ) and the like can be used. The thickness of the first magnetic layer 10 is, for example, 2 nm or more.

The first magnetic layer 10 may have a two-layer structure. In this case, the first magnetic layer 10 may include an FeCo alloy layer and the following layers stacked with the FeCo alloy layer. Stacked with the FeCo alloy layer is an Fe—Co—Si—B alloy, a Tb—M—Fe alloy (M is Sm, Eu, Gd, Dy, Ho, Er), Tb— M1-Fe-M2 alloy (M1 is Sm, Eu, Gd, Dy, Ho, Er, M2 is Ti, Cr, Mn, Co, Cu, Nb, Mo, W, Ta), Fe-M3-M4- B alloy (M3 is Ti, Cr, Mn, Co, Cu, Nb, Mo, W, Ta, M4 is Ce, Pr, Nd, Sm, Tb, Dy, Er), Ni, Al-Fe and ferrite ( Fe ₃ O ₄ , (FeCo) ₃ O ₄ ), etc.).

  For example, when the intermediate layer 30 is a metal, the GMR effect appears. When the intermediate layer 30 is an insulator, a TMR effect appears. For example, in the strain sensing element 50, for example, a CPP (Current Perpendicular to Plane) -GMR effect in which a current flows along the stacking direction of the strain resistance change unit 50s is used.

  Further, as the intermediate layer 30, a CCP (Current-Confined-Path) spacer layer in which a plurality of metal current paths having a width (for example, a diameter) of about 1 nm to about 5 nm are formed through a part of the insulating layer in the film thickness direction. Can be used. Again, the CCP-GMR effect is used.

  Thus, in this embodiment, the inverse magnetostriction phenomenon in the strain sensing element 50 is used. Thereby, highly sensitive detection becomes possible. When the inverse magnetostriction effect is used, for example, the magnetization direction of at least one of the first magnetic layer 10 and the second magnetic layer 20 changes with respect to a strain applied from the outside. The relative angles of the magnetizations of the two magnetic layers change depending on the strain (existence / absence and degree thereof) applied from the outside. Since the electrical resistance changes due to externally applied strain, the strain sensing element 50 functions as a pressure sensor.

FIG. 6A and FIG. 6B are schematic perspective views illustrating a partial configuration of the pressure sensor according to the first embodiment.
As shown in FIG. 6A, the strain sensing element 50 includes, for example, a first electrode 51 and a second electrode 52. A strain resistance changing portion 50 s is provided between the first electrode 51 and the second electrode 52. In this example, in the strain resistance changing unit 50 s, there is a case where the buffer layer 41 (also serves as a seed layer) from the first electrode 51 side toward the second electrode 52. The thickness is, for example, 1 nm or more and 10 nm or less. Specifically, an amorphous layer containing Ta or Ti is used, or a layer such as Ru or NiFe serving as a seed layer for promoting crystal orientation is used (a laminated film of these may be used). Antiferromagnetic layer 42 (for example, thickness 5 nm or more and 10 nm or less), magnetic layer 43 (for example, thickness 2 nm or more and 6 nm or less), Ru layer 44, second magnetic layer 20 (for example, thickness 2 nm or more and 5 nm or less), intermediate layer 30 (For example, a thickness of 1 nm to 3 nm), a first magnetic layer 10 (for example, a thickness of 2 nm to 5 nm) and a cap layer 45 (for example, a thickness of 1 nm to 5 nm) are provided in this order. To have.

  For example, a magnetic multilayer film is used for the second magnetic layer 20. The first magnetic layer 10 includes a magnetic laminated film 10a (for example, a thickness of 1 nm or more and 3 nm or less. For example, an alloy containing CoFe or CoFe is used), a magnetic laminated film 10a, and a cap layer 45. High magnetostrictive magnetic film 10b (for example, 1 nm or more and 5 nm or less).

For the first electrode 51 and the second electrode 52, for example, a non-magnetic material such as Au, Cu, Ta, or Al can be used. By using a soft magnetic material as the first electrode 51 and the second electrode 52, it is possible to reduce external magnetic noise that affects the strain resistance changing portion 50s. For example, permalloy (NiFe alloy) or silicon steel (FeSi alloy) can be used as the soft magnetic material. The strain sensing element 50 is covered with an insulator such as aluminum oxide (for example, Al ₂ O ₃ ) or silicon oxide (for example, SiO ₂ ) so that no leak current flows around it.

The magnetization direction of at least one of the first magnetic layer 10 and the second magnetic layer 20 changes according to the stress. The absolute value of the magnetostriction constant of at least one of the magnetic layers (magnetic layer whose magnetization direction changes according to stress) is preferably set to 10 ⁻⁵ or more, for example. Thereby, the magnetization direction changes according to the strain applied from the outside by the inverse magnetostriction effect. For example, at least one of the first magnetic layer 10 and the second magnetic layer 20 is made of a metal such as Fe, Co, Ni, or an alloy containing them. The magnetostriction constant is set to be large depending on the element used and the additive element. The absolute value of the magnetostriction constant is preferably large. Considering materials that can be used as realistic devices, the absolute value of the magnetostriction constant is practically about 10 ⁻² or less.

For example, an oxide such as MgO is used for the intermediate layer 30. The magnetic layer on the MgO layer generally has a positive magnetostriction constant. For example, when the first magnetic layer 10 is formed on the intermediate layer 30, a magnetization free layer having a laminated structure of CoFeB / CoFe / NiFe is used as the first magnetic layer 10. When the uppermost NiFe layer is Ni-rich, the magnetostriction constant of the NiFe layer is negative and its absolute value increases. In order to suppress the cancellation of the positive magnetostriction on the oxide layer, the Ni composition of the uppermost NiFe layer is not made Ni rich as compared with the permalloy composition of Ni ₈₁ Fe ₁₉ which is generally used. Specifically, the Ni ratio in the uppermost NiFe layer is preferably less than 80 atomic percent (atomic%). When the first magnetic layer 10 is a magnetization free layer, the thickness of the first magnetic layer 10 is preferably, for example, 1 nm or more and 20 nm or less.

  In the case where the first magnetic layer 10 is a magnetization free layer, the second magnetic layer 20 may be a magnetization fixed layer or a magnetization free layer. When the second magnetic layer 20 is a fixed magnetization layer, the magnetization direction of the second magnetic layer 20 does not substantially change even when strain is applied from the outside. The electrical resistance changes depending on the relative magnetization angle between the first magnetic layer 10 and the second magnetic layer 20. The presence or absence of distortion is detected by the difference in electrical resistance.

  When both the first magnetic layer 10 and the second magnetic layer 20 are magnetization free layers, for example, the magnetostriction constant of the first magnetic layer 10 is set to be different from the magnetostriction constant of the second magnetic layer 20. The

  Whether the second magnetic layer 20 is a magnetization fixed layer or a magnetization free layer, the thickness of the second magnetic layer 20 is preferably, for example, 1 nm or more and 20 nm or less.

  For example, when the second magnetic layer 20 is a magnetization fixed layer, for example, a synthetic AF structure using a laminated structure of a diamagnetic layer / magnetic layer / Ru layer / magnetic layer is used for the second magnetic layer 20. Can do. For example, IrMn is used for the diamagnetic layer. Further, as will be described later, a hard bias layer may be provided.

  In the strain sensing element 50, the spin of the magnetic layer is used. A very small size is sufficient for the area required for the strain sensing element 50. For example, when the strain sensing element 50 is considered to be a square size, the length of one side only needs to be 10 nm × 10 nm to 20 nm × 20 nm or more.

  The area of the strain sensing element 50 is made sufficiently smaller than the area of the transducer thin film 64 that is bent by pressure. Here, the transducer thin film is a portion surrounded by the fixed end as described above, and having a certain thickness and being thinner than the fixed end and being bent by external pressure. Specifically, the area of the strain sensing element 50 is 1/5 or less of the area in the substrate surface of the transducer thin film 64. In general, the size of the transducer thin film 64 is about 60 μm or more and 600 μm or less as described above. When the diameter of the transducer thin film 64 is as small as about 60 μm, the length of one side of the strain sensing element 50 is, for example, 12 μm or less. When the diameter of the transducer thin film is 600 μm, the length of one side of the strain sensing element 50 is 120 μm or less. This value is the upper limit of the size of the strain sensing element 50, for example.

  Compared with the upper limit value, the above-mentioned size having a side length of 10 nm to 20 nm is extremely small. For this reason, in consideration of the processing accuracy of the element, the necessity of making the strain sensing element 50 too small does not occur. Therefore, it is practically preferable that the size of one side of the strain sensing element 50 is, for example, about 0.5 μm to 20 μm. If the element size is extremely small, the magnitude of the demagnetizing field generated in the strain sensing element 50 becomes large, which causes problems such as difficulty in bias control of the strain sensing element 50. When the element size is increased, the problem of demagnetizing field does not occur, so that it is easy to handle from an engineering point of view. From this viewpoint, as described above, a preferable size is 0.5 μm or more and 20 μm or less.

  For example, the length along the X-axis direction of the strain sensing element 50 is 20 nm or more and 10 μm or less. The length of the strain sensing element 50 along the X-axis direction is preferably 200 nm or more and 5 μm or less.

  For example, the length of the strain sensing element 50 along the Y-axis direction (a direction perpendicular to the X-axis direction and parallel to the XY plane) is 20 nm or more and 10 μm or less. The length along the Y-axis direction of the strain sensing element 50 is preferably 200 nm or more and 5 μm or less.

  For example, the length along the Z-axis direction (direction perpendicular to the XY plane) of the strain sensing element 50 is 20 nm or more and 100 nm or less.

  The length of the strain sensing element 50 along the X-axis direction may be the same as or different from the length of the strain sensing element 50 along the Y-axis direction. Shape magnetic anisotropy occurs when the length of the strain sensing element 50 along the X-axis direction is different from the length of the strain sensing element 50 along the Y-axis direction. Thereby, the same effect as that obtained in the hard bias layer can be obtained.

  The direction of the current flowing in the strain sensing element 50 may be the direction from the first magnetic layer 10 toward the second magnetic layer 20 or the direction from the second magnetic layer 20 toward the first magnetic layer 10.

FIG. 6B illustrates another configuration of a part of the pressure sensor according to the first embodiment.
As shown in FIG. 6B, the strain sensing element 50 may include bias layers 55a and 55b (hard bias layer). The bias layers 55a and 55b are provided to face the strain resistance change unit 50s.

  In this example, the second magnetic layer 20 is a magnetization fixed layer. The bias layers 55 a and 55 b are juxtaposed with the second magnetic layer 20. Between the bias layers 55a and 55b, the strain resistance changing unit 50s is disposed. An insulating layer 54a is provided between the bias layer 55a and the strain resistance changing portion 50s. An insulating layer 54b is provided between the bias layer 55b and the strain resistance changing portion 50s.

  The bias layers 55 a and 55 b apply a bias magnetic field to the first magnetic layer 10. Thereby, the magnetization direction of the first magnetic layer 10 can be biased to an appropriate position, and a single magnetic domain can be formed.

  Each of the bias layers 55a and 55b (in this example, the length along the Y-axis direction) is, for example, not less than 100 nm and not more than 10 μm.

  The size of each of the insulating layers 54a and 54b (in this example, the length along the Y-axis direction) is, for example, 1 nm or more and 5 nm or less.

Next, an example of the operation of this embodiment will be described.
FIG. 7A and FIG. 7B are schematic views illustrating the operation of the pressure sensor according to the first embodiment.
FIG. 7A is a schematic cross-sectional view taken along the straight line 64d in FIG. FIG. 6B is a schematic view illustrating the operation of the pressure sensor.

  As shown in FIG. 7A, in the pressure sensor 310 according to this embodiment, the transducer thin film 64 bends by receiving stress 80 from a medium such as air. For example, stress 81 (for example, tensile stress) is applied to the transducer thin film 64 by bending the transducer thin film 64 so that the film surface 64a is convex. At this time, the stress 81 is also applied to the strain sensing element 50 provided on the film surface 64a of the transducer thin film 64 to cause distortion. Thereby, in the strain sensing element 50, the electrical resistance between the one end and the other end of the strain sensing element 50 changes according to the change in the strain amount due to the inverse magnetostrictive effect. When the transducer thin film 64 bends so that the film surface 64 a is concave, compressive stress is applied to the transducer thin film 64.

  As shown in FIG. 7B, a signal 50 sg corresponding to the stress can be obtained from each of the plurality of strain sensing elements 50. For example, the first signal sg1 is obtained from the first strain sensing element 50A. A second signal sg2 is obtained from the second strain sensing element 50B. The plurality of signals 50sg are processed by the processing circuit 113. For example, a plurality of signals 50sg obtained from each of the strain sensing elements 50 are subjected to addition processing.

  At this time, not only the signals are simply added, but addition processing is performed with a weight added to each position. This makes it possible to obtain a pressure signal that is favorable for application.

  For example, the stress sensor according to the embodiment can be applied to an acoustic microphone or an ultrasonic microphone that acquires sound waves. At this time, even when the signal obtained from each of the strain sensing elements 50 is weak, it is possible to obtain a signal suitable for the subsequent amplification process by adding the signals from the plurality of strain sensing elements 50. It becomes possible.

  Further, it is possible to improve frequency characteristics by processing signals from the plurality of strain sensing elements 50. In addition to addition processing, multiplication, subtraction, differential signal processing, or the like may be performed. Thereby, a signal more suitable for the subsequent amplification processing can be obtained.

  In the embodiment, it is easy to reduce the size of the strain sensing element 50, and thus it is possible to easily provide a plurality of strain sensing elements 50 on the transducer thin film 64. Then, by arranging the plurality of strain sensing elements 50 on one common transducer thin film 64, signals obtained from the plurality of strain sensing elements 50 can be complementary to each other. As will be described later, for example, by arranging a plurality of strain sensing elements 50 at symmetrical positions, signals obtained from the plurality of strain sensing elements 50 can have complementary characteristics. In such a configuration, for example, a signal having a desired characteristic can be easily obtained without performing complicated signal processing, or by simply performing a relatively simple addition process on the outputs of the plurality of strain sensing elements 50. it can. Thereby, for example, highly sensitive sound waves can be easily detected in a wide frequency band.

  Such a detection signal suitable for processing is difficult to obtain with a capacitance change type MEMS microphone, and is only possible when the configuration according to the embodiment is used.

  In the strain sensing element 50 of the pressure sensor 310 according to the present embodiment, the inverse magnetostrictive effect and the MR effect are used. Since a change in resistance caused by a change in magnetization is sensed, deterioration in sensitivity when miniaturized can be suppressed.

  On the other hand, in a capacitive pressure sensor, for example, when the strain sensing element is miniaturized, the area between the electrodes decreases, so that the sensitivity is greatly deteriorated. Also in the resistance type pressure sensor, when the strain sensing element is miniaturized, the current of the resistance element is decreased, so that the sensitivity is greatly deteriorated. Therefore, it is difficult to miniaturize the strain sensing element in capacitive and resistance type pressure sensors.

  In the pressure sensor 310 according to the embodiment, deterioration of sensitivity is suppressed even if the strain sensing element is miniaturized. That is, a highly sensitive stress sensor can be provided.

  Furthermore, in the embodiment, since the deterioration of sensitivity is suppressed even if the size is reduced, for example, a plurality of strain sensing elements 50 can be disposed on the transducer thin film 64. Thereby, the accuracy of pressure measurement can be improved.

  For example, each of the strain sensing elements 50a to 50d is on a straight line 64d passing through the center of gravity 64b, and the distance from the center of gravity 64b is different. The amount of strain of the transducer thin film 64 at each position of the strain sensing elements 50a to 50d is different from each other. For example, by adding a plurality of signals 50sg obtained from each of the strain sensing elements 50a to 50d, the strain sensing element 50 can respond to the vibration of the transducer thin film 64 in a wide frequency range.

  Furthermore, the frequency characteristics can be corrected by processing the signal 50sg obtained from the plurality of strain sensing elements 50a to 50d.

As will be described later, the strain sensing element 50 may be formed above the substrate on which the transistor is formed. As a result, the pressure sensor can be reduced in size, and the strain can be detected with high sensitivity in a minute region.
When the transducer thin film 64 is provided above the transistor 112, a practically obtained movable range (distance along the Z-axis direction) is 10 μm or less. In practice, a smaller movable range is easier to form. In order to accurately measure the strain even in such a small movable range, a very sensitive pressure sensor is required. Further, it is desirable that the area of the transducer thin film is small in order to accurately measure the pressure even in a minute point contact state. If the transducer thin film becomes small, the amount of deflection becomes small unless the thickness of the transducer thin film is reduced, and measurement with high sensitivity is impossible. In order to be used as a pressure sensor in a state that is not easily broken in the external environment, the thickness of the transducer thin film cannot be reduced too much. Therefore, if the transducer thin film diameter is reduced, the sensitivity of the pressure sensor also deteriorates.

  As described above, a strain sensor having high sensitivity is desired to achieve the two situations of the transducing thin film having a small vertical movable range and the use of the transducing thin film with a small diameter. It is. This is possible because the strain sensing element 50 according to the embodiment satisfies this requirement.

  In the strain sensing element 50 according to the embodiment, a high strain sensitivity α can be realized even with a small element area without substantially depending on the size of the element. The strain sensitivity α is expressed by, for example, α = (ΔR / Rmin) / ε. Rmin is a resistance in a low state, and ΔR is a resistance change amount. ε is strain and is expressed by Δl / l. Here, l is an initial length, and Δl is a displacement amount.

For example, in the case of a piezoresistive strain sensor using Si, the strain sensitivity α is determined by the material used. For example, the strain sensitivity α is about 130. In the case of a piezoresistive strain sensor using Si, an element area of about 100 μm per side is required. The strain sensitivity α per unit area is, for example, 130/100 μm ² and is about 10 ¹⁰ .

On the other hand, in the case of the strain sensing element 50 (spin strain sensor) according to the present embodiment, there is no upper limit on the strain sensitivity α, and a strain sensitivity of about 1000 can be easily realized. The element area necessary for realizing the strain sensitivity α is about 20 nm on a side. For this reason, for example, the strain sensitivity α per unit area is about 10 ¹⁷ . As described above, in the embodiment, the sensitivity per unit area can be improved by about 7 digits as compared with the pressure sensor of the conventional MEMS structure (Si-MEMS: Micro Electro Mechanical Systems) using Si. Become.

(Second Embodiment)
FIG. 8 is a schematic plan view illustrating the configuration of the pressure sensor according to the second embodiment.
As shown in FIG. 8, the sensor unit 72 (first sensor unit 72 </ b> A) is also provided in the pressure sensor 320 according to the present embodiment. The sensor unit 72 is provided on the base 71a (omitted in FIG. 8). Also in this example, the sensor part 72 includes a first transducer thin film 64A, a first fixing part 67A, and a first strain sensing element 50A. Also in this example, a plurality of strain sensing elements 50 (strain sensing elements 50a to 50d) are provided.

  In the present embodiment, the arrangement of the strain sensing elements 50a to 50d is different from the arrangement in the first embodiment. Other than this, the configuration is the same as in the first embodiment, and a description thereof is omitted.

  Although omitted in FIG. 8 for the sake of clarity, the first wiring 57 and the second wiring 58 connected to each of the plurality of strain sensing elements 50 are provided. Also in this case, these wirings extend from the strain sensing element 50 toward the base 71a through the fixing portion 67 or the inside of the fixing portion 67. Also in various pressure sensors according to the embodiments described below, the first wiring 57 and the second wiring 58 are provided, but illustration thereof is omitted.

  In the present embodiment, the plurality of strain sensing elements 50 a to 50 d are arranged along the edge 64 eg of the transducer thin film 64.

  In the pressure sensor 320, a plurality of strain sensing elements 50 are arranged at a position equidistant from the position of the center of gravity 64b of the transducer thin film 64. Thereby, the magnitude | size of the distortion in the some distortion detection element 50 resulting from the bending of the transducer thin film 64 becomes the same. However, in the embodiment, even if the plurality of strain sensing elements 50 are arranged at positions equidistant from the center of gravity 64b, the direction of magnetization change differs depending on each position. For this reason, the phase response in each of the strain sensing elements 50 is different, and as a result, the signals obtained are also different. Therefore, by adding the signals from the plurality of strain sensing elements 50 that exhibit different phase responses, the specific effects according to the embodiment can be exhibited.

  As described above, in the pressure sensor 320, the first sensor portion 72A further includes the second strain sensing element 50B provided on the film surface 64a (first film surface). Also in this case, the second strain sensing element 50B includes the third magnetic layer 10B, the fourth magnetic layer 20B, and the nonmagnetic second intermediate layer provided between the third magnetic layer 10B and the fourth magnetic layer 20B. Layer 30B. The second strain sensing element 50B is arranged along the edge 64eg of the film surface 64a with the first strain sensing element 50A. The distance between the first strain sensing element 50A and the center of gravity 64b is the same as the distance between the second strain sensing element 50B and the center of gravity 64b. Here, the distance between the first strain sensing element 50A and the center of gravity 64b is the distance between the center of gravity of the first strain sensing element 50A and the center of gravity 64b of the film surface 64a. The distance between the second strain sensing element 50B and the center of gravity 64b is the distance between the center of gravity of the second strain sensing element 50B and the center of gravity 64b of the film surface 64a.

  For example, the magnetization direction of the third magnetic layer 10B of the second strain sensing element 50B is along one of the magnetization direction of the first magnetic layer 10 and the magnetization direction of the second magnetic layer 20 of the first strain sensing element 50A. The magnetization direction of the fourth magnetic layer 20B of the strain sensing element 50B is along the other of the magnetization direction of the first magnetic layer 10 and the magnetization direction of the second magnetic layer 20 of the first strain sensing element 50A.

  In this example, the strain sensing elements 50a to 50d are arranged along an edge 64eg on the film surface 64a surrounded by a portion on the + X direction side from the center of gravity 64b and a portion on the + Y direction side from the center of gravity 64b. ing. The magnetization directions of the first magnetic layer 10 and the second magnetic layer 20 in each of the strain sensing elements 50a to 50d are one common direction. For example, the magnetization direction of the first magnetic layer 10 and the magnetization direction of the second magnetic layer 20 are both + X directions.

  The fixing parts 67a and 67c are arranged at the intersection of the straight line 64c and the edge part 64eg of the transducer thin film 64. The fixing part 67b and the fixing part 67d are arranged at the intersection of the straight line 64d and the edge part 64eg of the transducer thin film 64. As described above, the fixing portion fixes a portion located on a straight line passing through the first strain detecting element 72A and the second strain detecting element 72B in the edge portion 65eg of the transducer thin film 64 to the base body 71a.

  In this example, the number of fixing portions 67 is the same as the number of strain sensing elements 50. The first wiring 57 and the second wiring 58 connected to the strain sensing element 50 extend toward the base 71a on or through the fixing portion 67 corresponding to each of the strain sensing elements 50. .

  In the pressure sensor 320, the angle between the magnetization direction of the first magnetic layer 10 and the second magnetic layer 20 in the strain sensing element 50a and the direction of the stress 81 is the first magnetic layer 10 and the second magnetic layer in the strain sensing element 50b. The angle between the magnetization direction of the magnetic layer 20 and the direction of the stress 81 is different.

  FIG. 9 is a schematic plan view illustrating the configuration of another pressure sensor according to the second embodiment. As shown in FIG. 9, also in the pressure sensor 321, the plurality of strain sensing elements 50 are arranged along the edge 64eg of the transducer thin film. In this example, the distances from the center of gravity 64b to each of the strain sensing elements 50 are substantially equal. For example, the magnetization direction 11 of the first magnetic layer 10 and the magnetization direction 21 of the second magnetic layer 20 in each of the strain sensing elements 50a to 50d when the stress 81 is not applied to the transducer thin film 64 have a common direction. It is suitable. For example, the magnetization direction 11 of the first magnetic layer 10 and the magnetization direction 21 of the second magnetic layer 20 are both in the + X direction. In this example, the shape of the fixing portion 67 is a ring shape, and the fixing portion 67 fixes the transducer thin film 64 along the edge portion 64eg of the transducer thin film 64. The edge 64eg of the transducer thin film 64 is continuously fixed.

  The amount of deflection of the transducer thin film 64 depends on the distance from the center of gravity 64b. In the transducer thin film 64, stresses 81 in different directions (stress direction 63) are applied along the edge 64eg of the transducer thin film 64.

  The strain sensing element 50a is disposed on the + X direction side from the center of gravity 64b. The magnetization direction 21 of the second magnetic layer 20 in the strain sensing element 50 a is the same as the direction 63 of the stress 81. In the strain sensing element 50 a, the magnetization direction 22 of the second magnetic layer does not change even when the stress 81 is applied, and remains the initial magnetization direction 21. In this case, the angle between the magnetization direction 11 of the first magnetic layer 10 and the magnetization direction 22 (magnetization direction 21) of the second magnetic layer 20 in the strain sensing element 50a is 0 degree.

  The strain detection element 50b is disposed at a position rotated, for example, by an angle θ (for example, 22.5 degrees) from the X axis direction about the center of gravity 64b with respect to the strain detection element 50a. The angle between the magnetization direction 21 of the second magnetic layer 20 and the direction 63 of the stress 81 in the strain sensing element 50b is, for example, an angle θ. In this case, the magnetization direction 22 of the second magnetic layer 20 when the stress is applied rotates from the initial magnetization direction 21 by, for example, an angle θ to become the magnetization direction 22. An angle between the magnetization direction 11 of the first magnetic layer 10 and the magnetization direction 22 of the second magnetic layer 20 in the strain sensing element 50b is, for example, an angle θ.

  Similarly, the magnetization direction 11 of the first magnetic layer 10 in the plurality of strain sensing elements 50 arranged along the edge 64eg of the transducer thin film 64, the magnetization direction 22 of the second magnetic layer 20 when stress is applied, The angle between varies depending on the direction 63 of the stress 81. The phases of the respective signals 50sg obtained from the respective strain sensing elements 50 are different from each other. Each signal 50 sg changes depending on the angle between the magnetization direction 11 of the first magnetic layer 10 and the magnetization direction 22 of the second magnetic layer 20.

  For example, as described with reference to FIG. 7B, the signal 50sg (the first signal sg1, the second signal sg2, etc.) obtained from the plurality of strain sensing elements 50a to 50d is added by the processing circuit 113, for example. .

  Also in this example, addition processing may be performed with weighting depending on each position. This makes it possible to obtain a pressure signal that is favorable for application.

  For example, even when the signal obtained from each of the strain sensing elements 50 is weak, it is possible to obtain a signal suitable for the subsequent amplification process by adding the signals from the plurality of strain sensing elements 50. It becomes.

  It is also possible to improve frequency characteristics. In addition to addition processing, multiplication, subtraction, differential signal processing, or the like may be performed. Thereby, a signal more suitable for the subsequent amplification processing can be obtained.

  In the embodiment, by providing a plurality of strain sensing elements 50 on one common transducer thin film 64, for example, a signal having a desired characteristic can be easily obtained without performing complicated signal processing. it can. Thereby, for example, highly sensitive sound waves can be easily detected in a wide frequency band.

  According to the pressure sensors 320 and 321, it is possible to perform filter processing using the phase difference between the plurality of strain sensing elements 50. Thereby, the controllability of the frequency characteristic can be enhanced.

  In addition, since the shape and structure of the transducer thin film are directly related to the frequency response, in general, when obtaining high sensitivity in a wide frequency band, the transducer thin film structure may become very complicated.

  On the other hand, in the pressure sensors 320 and 321 according to the embodiment, a wide frequency characteristic can be improved by using a simple structure of the transducer thin film without complicating the shape of the transducer thin film. .

  In the embodiment, since the sensitivity per area in the strain sensing element 50 is high, a plurality of strain sensing elements 50 can be provided on one transducer thin film 64, and the strain sensing elements 50 can be freely arranged. It is a unique effect obtained by high degree.

(Third embodiment)
FIG. 10 is a schematic plan view illustrating the configuration of another pressure sensor according to the third embodiment.
As shown in FIG. 10, in the pressure sensor 330, the plurality of strain sensing elements 50 are arranged at substantially equal intervals along the straight line 64c and the straight line 64d. For example, four strain sensing elements 50 are arranged on both sides of the center of the straight line 64c (corresponding to the center of gravity 64b). Four strain sensing elements 50 are arranged on both sides of the center of the straight line 64d (corresponding to the center of gravity 64b). In this example, the strain sensing element 50 is disposed at a substantially symmetric position with respect to the center of gravity 64b.

  That is, the pressure sensor 330 according to this embodiment is also provided with a plurality of strain sensing elements 50. For example, the sensor unit 72 (first sensor unit 72A) further includes a second strain sensing element 50B in addition to the first strain sensing element 50A.

  For example, the first strain sensing element 50A is a strain sensing element 50a, and the second strain sensing element 50B is a strain sensing element 50b. The second strain sensing element 50B is aligned with the first strain sensing element 50A and along the edge eg of the film surface 64a.

  For example, the first strain sensing element 50A is a strain sensing element 50a, and the second strain sensing element 50B is a strain sensing element 50c. A straight line (straight line 64d) connecting the first strain sensing element 50A (strain sensing element 50a) and the second strain sensing element 50B (strain sensing element 50c) passes through the center of gravity 64b.

  On the other hand, in the pressure sensor 330 according to the embodiment, a plurality of strain sensing elements that react differently to strain are provided. Thereby, the frequency characteristic can be corrected.

  For example, in the strain sensing elements 50a to 50d that are symmetric with respect to the center of gravity 64b of the transducer thin film 64, the first magnetic layer 10 and the second magnetic layer 20 of the strain sensing elements 50a to 50d before the stress is applied. Let the magnetization direction of X be the X-axis direction, for example. When stress is applied to the transducer thin film 64, stress 81 (for example, tensile stress) is generated in the direction from the center of gravity 64b of the film surface 64a of the transducer thin film 64 toward the edge 64eg. In the strain sensing elements 50a to 50d, the angles of the magnetization direction and the direction 63 of the stress 81 are different from each other. For example, in this example, the angles between the magnetization direction and the stress 63 direction 63 in the strain sensing elements 50a to 50d are 0 degree, 90 degrees, 180 degrees, and 90 degrees, respectively. These signals are added in the processing circuit. Thereby, a wide frequency characteristic can be obtained.

  In the pressure sensor 330, the fixing portions 67a and 67c are disposed at the intersections of the straight line 64c and the edge portion 64eg of the transducer thin film 64. The fixing part 67b and the fixing part 67d are arranged at the intersection of the straight line 64d and the edge part 64eg of the transducer thin film 64.

FIG. 11 is a schematic plan view illustrating the configuration of another pressure sensor according to the third embodiment.
As shown in FIG. 11, in the pressure sensor 331 according to the present embodiment, the shape of the fixing portion 67 is a ring shape. The fixing portion 67 extends along the edge portion 64eg of the transducer thin film 64. The fixing portion 67 continuously fixes the edge portion 64eg of the transducer thin film 64. Since the edge 64eg of the transducer thin film 64 is continuously fixed, the amount of deflection of the transducer thin film 64 can depend on the distance from the center of gravity 64b.

FIG. 12 is a schematic plan view illustrating the configuration of another pressure sensor according to the third embodiment.
As shown in FIG. 12, in another pressure sensor 332 according to the present embodiment, the plurality of strain sensing elements 50 are arranged at substantially equal intervals along the straight line 64c and the straight line 64d. Four strain sensing elements 50 are arranged on both sides of the centroid 64b in the straight line 64c, and four strain sensing elements 50 are arranged on both sides of the centroid 64b in the straight line 64d.

  The plurality of strain sensing elements 50 are arranged at substantially equal intervals along the straight line 64e and the straight line 64f. Four strain sensing elements 50 are disposed on both sides of the center (corresponding to the center of gravity 64b) in the straight line 64e, and four strain sensing elements 50 are disposed on both sides of the center (corresponding to the center of gravity 64b) in the straight line 64f. Has been. The strain sensing element 50 is disposed at a symmetrical position with respect to the center of gravity 64b.

(Fourth embodiment)
FIG. 13 is a schematic plan view illustrating the configuration of the pressure sensor according to the fourth embodiment.
As illustrated in FIG. 13, the pressure sensor 340 includes a plurality of sensor units 72. For example, the pressure sensor 340 further includes a second sensor unit 72B in addition to the base 71a and the first sensor unit 72A.

  As already described, the first sensor portion 72A includes the first transducer thin film 64A, the first fixing portion 67A, and the first strain sensing element 50A. In this example, the first sensor unit 72A further includes a second strain sensing element 50B. These configurations are as described above.

  The second sensor unit 72B is provided on the base 71a. The second sensor part 72B further includes a second transducer thin film 64B, a second fixing part 67B, and a third strain sensing element 50C. The second transducer thin film 64B has a second film surface 64Ba and is flexible. The second fixing portion 67B fixes the second transducer thin film 64B to the base 71a. The third strain sensing element 50C is provided on the second film surface 64Ba.

  The configuration of the third strain sensing element 50C is the same as the configuration of the first strain sensing element 50A, for example. That is, as illustrated in FIG. 3, the third strain sensing element 50C is provided between the fifth magnetic layer 10C, the sixth magnetic layer 20C, and the fifth magnetic layer 10C and the sixth magnetic layer 20C. And a nonmagnetic third intermediate layer 30C.

  The width w2 of the second transducer thin film 64 along the direction parallel to the second membrane surface 64Ba through the center of gravity 64Bb of the second membrane surface 64Ba of the second transducer thin film 64B is the first transducer thin film (transducer). It differs from the width w1 of the first transducer thin film 64 along the direction parallel to the first film surface through the center of gravity 64b of the film surface 64a (first film surface) of the thin film 64). In this example, the width w2 is wider than the width w1.

  Thus, in the pressure sensor 340, a plurality of transducer thin films 64 having different diameters are arranged in an array. Different diameters have different resonant frequencies. Thereby, the sensitivity can be improved at a plurality of resonance frequencies.

(Fifth embodiment)
The present embodiment relates to a method for manufacturing a pressure sensor (for example, a pressure sensor according to the first to fourth embodiments).
FIG. 14 is a flowchart illustrating the method for manufacturing the pressure sensor according to the fifth embodiment.
FIG. 15A to FIG. 15D are schematic perspective views in order of the processes, illustrating the method for manufacturing the pressure sensor according to the fifth embodiment.
These drawings are examples of a manufacturing method of the pressure sensor 310. In FIG. 14A to FIG. 14D, the shape and size of each element are appropriately changed from those in FIG.

As shown in FIG. 14, a transducer film is formed (step S101).
For example, as shown in FIG. 15A, a transducer film 64fm to be the transducer thin film 64 is formed on the substrate 70s. For example, a silicon substrate is used as the substrate 70s. For example, a silicon oxide film is used for the transducer film 64fm. In the case where a fixing portion 67 (for example, fixing portions 67a to 67d) that intermittently holds the edge 64eg of the transducer thin film 64 is formed, the transducer film 64fm is processed in this step to become the fixing portion 67. A portion may be formed.

As shown in FIG. 14, the first conductive layer is formed (step S102).
For example, as shown in FIG. 15B, a conductive film is formed on the transducer film 64fm (or the transducer thin film 64), and the conductive film is processed into a predetermined shape to form the first conductive layer. (Conductive layer 61f) is formed. This conductive layer can be at least a part of the first wiring 57, for example.

As shown in FIG. 14, the strain sensing element 50 is formed (step S103).
For example, as shown in FIG. 15C, a laminated film that becomes the strain sensing element 50 is formed on a part of the conductive layer 61f. This laminated film is, for example, a buffer layer, a seed layer, an antiferromagnetic layer, a magnetic layer, a magnetic coupling layer, a magnetic layer, an intermediate layer, a magnetic layer, a high magnetostrictive film, and a cap film laminated in this order. including. The laminated film is processed into a predetermined shape to form the strain sensing element 50 (for example, the strain sensing elements 50a to 50d).

As shown in FIG. 14, the second conductive layer is formed (step S104).
For example, as shown in FIG. 15D, an insulating film (not shown) is formed so as to cover the strain sensing element 50, and a part of the insulating film is removed to expose the upper surface of the strain sensing element 50. A conductive film is formed thereon and processed into a predetermined shape to obtain a second conductive layer (conductive layer 62f).

  As shown in FIG. 14, a wiring (for example, the first wiring 57) connected to the first conductive layer and a wiring (for example, the second wiring 58) connected to the second conductive layer are formed (step S105). . The wiring may be formed by at least one of the formation of the first conductive layer and the formation of the second conductive layer. That is, at least a part of the process for processing the wiring may be performed simultaneously with at least a part of the formation of the first conductive layer, the formation of the second conductive layer, and the formation of the strain sensing element. That is, at least a part of steps S102 to S105 may be performed simultaneously within the technically possible range, and the order may be changed.

As shown in FIG. 14, etching is performed from the back surface (lower surface) of the substrate 70s (step S106). For this processing, for example, Deep-RIE is used. At this time, a Bosch process may be performed.
As a result, as shown in FIG. 15D, the cavity 70 is formed in the substrate 70s. A portion where the cavity portion 70 is not formed becomes a non-cavity portion 71. Thereby, the transducer thin film 64 is formed.

  In addition, when forming the fixing | fixed part 67 (for example, pressure sensor 321 etc.) which hold | maintains the edge part 64eg of the transducing thin film 64 continuously, etching from the back surface of the board | substrate 70s is performed simultaneously with the transducing thin film 64. A fixing portion 67 is formed.

  As described above, in this manufacturing method, a film to be the transducer thin film 64 (transducer film 64fm) is formed on the semiconductor substrate, and a film to be the strain sensing element 50 (strain resistance changing portion) is formed thereon. Then, it is patterned into the shape of the element. According to the present embodiment, after the element is formed and energization is enabled, etching is performed from the back surface of the substrate to the transducer film 64fm to form the transducer thin film 64, a highly sensitive pressure sensor can be manufactured.

(Sixth embodiment)
FIG. 16 is a schematic perspective view illustrating a pressure sensor according to the sixth embodiment.
As shown in FIG. 16, the pressure sensor 360 according to the present embodiment includes a semiconductor circuit unit 110 in addition to the base 71 a and the sensor unit 72 (first sensor unit 72 </ b> A). A base 71a is provided on the semiconductor circuit part 110, and a sensor part 72 is provided on the base 71a.

  The semiconductor circuit unit 110 includes, for example, a semiconductor substrate 111 and a transistor 112.

  The semiconductor substrate 111 includes a main surface 111 a of the semiconductor substrate 111. The semiconductor substrate 111 includes an element region 111b provided on the main surface 111a. The transistor 112 is provided in the element region 111b.

  The semiconductor circuit unit 110 may include a processing circuit 113. The processing circuit 113 may be provided in the element region 111b or may be provided in other regions. The processing circuit 113 is provided at an arbitrary location in the semiconductor circuit unit 110. The processing circuit 113 may include a transistor 112 provided in the element region 111b.

  The base 71a is provided above the semiconductor circuit unit 110, for example. A hollow portion 70 is formed in the base 71a. The cavity 70 is formed above the transistor 112. The cavity 70 is formed at least above the element region 111b. A portion other than the hollow portion 70 in the base body 71 a is a non-hollow portion 71. Non-hollow part 71 is juxtaposed with cavity part 70 in a plane parallel to main surface 111a.

  In this example, the strain sensing element 50 is formed above the substrate on which the transistor 112 is formed. The transistor 112 and the strain sensing element 50 are connected not by a wire used in the mounting process but by a wiring layer formed consistently in the wafer manufacturing process. As a result, the pressure sensor can be reduced in size, and the strain can be detected with high sensitivity in a minute region.

  By forming the transistor 112 and the strain sensing element 50 on a common substrate, for example, a circuit (processing circuit 113 or the like) that processes information obtained by the sensor such as an arithmetic circuit, an amplifier circuit, or a communication circuit is distorted. It can be formed on the same substrate as the sensing element 50. By forming the high-sensitivity sensor integrally with the arithmetic circuit, it is possible to reduce the size of the system as a whole. Further, low power consumption can be realized.

  In the present embodiment, for example, a high-sensitivity sensor is used, and a circuit that performs arithmetic processing on a signal obtained by the sensor is realized as a system-on-chip on a common substrate.

  However, as already described, the semiconductor circuit unit 110 may be provided separately from the base 71a and the sensor unit 72. In this case, for example, in the packaging process, the base 71a, the sensor unit 72, and the semiconductor circuit unit 110 are arranged in one package.

FIG. 17A to FIG. 17C are schematic views illustrating the configuration of a pressure sensor according to the sixth embodiment.
FIG. 17A is a schematic perspective view, and FIG. 17B and FIG. 17C are block diagrams illustrating pressure sensors.

  As illustrated in FIG. 17A, the pressure sensor 361 according to the present embodiment further includes an antenna 115 and an electrical wiring 116 in addition to the base 71 a, the sensor unit 72, and the semiconductor circuit unit 110. The antenna 115 is connected to the semiconductor circuit unit 110 via the electrical wiring 116. The sensor unit 72 of the pressure sensor 361 has, for example, the same configuration as the sensor unit 72 in the pressure sensor 310 illustrated in FIGS. 1 and 2. That is, for example, the base 71a and the first sensor unit 72A are provided. The first sensor unit 72A includes a first transducer thin film 64A, a first fixing unit 67A, and a first strain sensing element 50A. In this example, the first sensor unit 72A further includes a second strain sensing element 50B. These configurations are as described above.

  As shown in FIG. 17B, the transmission circuit 117 is provided in the pressure sensor 361. The transmission circuit 117 wirelessly transmits data based on the electrical signal flowing through the strain sensing element 50. At least a part of the transmission circuit 117 can be provided in the semiconductor circuit portion 110. The semiconductor circuit unit 110 can include a transmission circuit 117 that wirelessly transmits data based on an electrical signal flowing through the strain sensing element 50.

As illustrated in FIG. 17C, the electronic device 118 d used in combination with the pressure sensor 361 is provided with a receiving unit 118. For example, an electronic device such as a portable terminal is used as the electronic device 118d.
For example, it becomes more convenient to use a pressure sensor 361 including the transmission circuit 117 and an electronic device 118d including the reception unit 118 in combination.

  In this example, as shown in FIG. 17B, the pressure sensor 361 is provided with a receiving circuit 117r that receives a control signal from the electronic device 118d. For example, at least a part of the reception circuit 117r can be provided in the semiconductor circuit unit 110. By providing the receiving circuit 117r, for example, the operation of the pressure sensor 361 can be controlled by operating the electronic device 118d.

  As illustrated in FIG. 17B, in this example, the pressure sensor 361 includes, for example, an AD converter 117 a connected to the strain sensing element 50 and a Manchester encoding unit 117 b as the transmission circuit 117. It is done. Further, a switching unit 117c is provided to switch between transmission and reception. This switching is controlled by the timing controller 117d. As the reception circuit 117r, a data correction unit 117e, a synchronization unit 117f, and a determination unit 117g are provided. Further, a voltage controlled oscillator 117h (VCO) is provided.

  On the other hand, as shown in FIG. 17C, the electronic device 118d includes a Manchester encoding unit 117b, a switching unit 117c, a timing controller 117d, a data correction unit 117e, a synchronization unit 117f, a determination unit 117g, and a voltage controlled oscillator 117h. And a storage unit 118a and a central processing unit 118b (CPU).

(Seventh embodiment)
The present embodiment relates to a method for manufacturing a pressure sensor according to the embodiment. Below, the manufacturing method of the pressure sensor 360 is demonstrated as one example.

  18 (a), 18 (b), 19 (a), 19 (b), 20 (a), 20 (b), 21 (a), 21 (b), 22 (A), 22 (b), 23 (a), 23 (b), 24 (a), 24 (b), 25 (a), 25 (b), 26 (a) ), FIG. 26 (b), FIG. 27 (a), FIG. 27 (b), FIG. 28 (a), FIG. 28 (b), FIG. 29 (a), and FIG. It is a schematic diagram which illustrates the manufacturing method of the pressure sensor which concerns on.

  FIGS. 18A to 29A are schematic plan views, and FIGS. 18B to 29B are schematic cross-sectional views.

  As shown in FIGS. 18A and 18B, the semiconductor layer 112 </ b> M is provided on the surface portion of the semiconductor substrate 111. An element isolation insulating layer 112I is formed on the upper surface of the semiconductor layer 112M. A gate 112G is formed on the semiconductor layer 112M via an insulating layer (not shown). A source 112S and a drain 112D are formed on both sides of the gate 112G, and the transistor 112 is formed. An interlayer insulating film 114a is formed thereon, and an interlayer insulating film 114b is further formed.

  In the region to be the non-cavity 71, a trench and a hole are formed in a part of the interlayer insulating films 114a and 114b. The connection pillars 114c to 114e are formed by embedding a conductive material in the holes. In this example, the connection pillar 114c is connected to the source 112S of one transistor, and the connection pillar 114d is connected to the drain 112D. The connection pillar 114e is connected to the source 112S of another transistor. A conductive material is embedded in the trench to form the wiring part 114f and the wiring part 114g. The wiring part 114f is connected to the connection pillar 114c and the connection pillar 114d. The wiring part 114g is connected to the connection pillar 114e. An interlayer insulating film 114h is formed on the interlayer insulating film 114b.

As shown in FIGS. 19A and 19B, SiO ₂ to be the interlayer insulating film 114i is formed on the interlayer insulating film 114h by, for example, CVD. A hole is formed in a predetermined position of the interlayer insulating film 114i, a conductive material (metal material) is embedded, and the upper surface is planarized by CMP. Thereby, the connection pillar 114j connected to the wiring part 114f and the connection pillar 114k connected to the wiring part 114g are formed.

  As shown in FIGS. 20A and 20B, a recess is formed in a region to be the cavity 70 of the interlayer insulating film 114i, and a sacrificial layer 114l is embedded in the recess. For example, SiGe is used for the sacrificial layer 114l. A material that can be formed at a low temperature is used for the sacrificial layer 114l.

As shown in FIGS. 21A and 21B, an insulating film 61bf (SiO ₂ or the like) to be the transducer thin film 64 is formed on the interlayer insulating film 114i and the sacrificial layer 114l. A hole is provided in the insulating film 61bf, and a conductive material (metal) is embedded in the hole to form the connection pillar 61fa and the connection pillar 62fa. The connection pillar 61fa is connected to the connection pillar 114k, and the connection pillar 62fa is connected to the connection pillar 114j.

  As shown in FIGS. 22A and 22B, a conductive layer 61f to be the first wiring layer 61 is formed on the insulating film 61bf, the connection pillar 61fa, and the connection pillar 62fa.

  As shown in FIGS. 23A and 23B, a laminated film 50f to be the strain sensing element 50 is formed on the conductive layer 61f.

As shown in FIGS. 24A and 24B, the laminated film 50f is processed into a predetermined shape, and an insulating film 65f (SiO ₂ or the like) to be the insulating layer 65 is formed thereon.

  As shown in FIGS. 25A and 25B, a part of the insulating film 65f is removed, and the conductive layer 61f is processed into a predetermined shape. Thereby, the shape of the first wiring layer 61 is formed. At this time, a part of the conductive layer 61f becomes the connection pillar 62fb connected to the connection pillar 62fa. Further, an insulating film 66f to be the insulating layer 66 is formed thereon.

  As shown in FIGS. 26A and 26B, an opening 66p is formed in the insulating film 66f. Thereby, the connection pillar 62fb is exposed.

  As shown in FIGS. 27A and 27B, a conductive layer 62f to be the second wiring layer 62 is formed thereon. A part of the conductive layer 62f is connected to the connection pillar 62fb.

  As shown in FIGS. 28A and 28B, the conductive layer 62f is processed into a predetermined shape. Thereby, the second wiring layer 62 is formed. The second wiring layer 62 is connected to the connection pillar 62fb.

As shown in FIGS. 29A and 29B, an opening 66o having a predetermined shape is formed in the insulating film 66f. The insulating film 61bf is processed through the opening 66o, and the sacrificial layer 114l is removed. Thereby, the cavity part 70 is formed. In removing the sacrificial layer 114l, for example, the sacrificial layer 114l is removed (for example, etched) from the upper surface of the sacrificial layer 114l (the surface of the sacrificial layer 114l opposite to the semiconductor substrate 111).
Thereby, the pressure sensor 360 concerning this embodiment can be formed.

  In order to form the ring-shaped fixing portion 67, for example, the space between the edge of the non-cavity portion 71 and the transducer thin film 64 above the cavity portion 70 is filled with an insulating film.

FIG. 30 is a flowchart illustrating the method for manufacturing the pressure sensor according to the seventh embodiment.
As shown in FIG. 30, in the method for manufacturing the pressure sensor according to the present embodiment, the transistor 112 is formed on the semiconductor substrate 111 (step S110). For example, the processing described with reference to FIGS. 18A and 18B is performed.

  In this manufacturing method, an interlayer insulating layer is formed on the semiconductor substrate 111, and a sacrificial layer 114l is formed on the transistor 112 (step S120). For example, the processing described with reference to FIGS. 19A to 20B is performed. This interlayer insulating layer includes, for example, an interlayer insulating film 114i.

  A thin film (for example, a transducer film 64f) to be the transducer thin film 64 is formed on the interlayer insulating layer (for example, the interlayer insulating film 114i) and the sacrificial layer 114l (step S121). In some cases, the following first conductive layer may also serve as the transducer thin film 64. In this case, step S121 is omitted.

  Then, a first conductive layer (conductive layer 61f) to be the first wiring layer 61 is formed (step S130). For example, the processing described with reference to FIGS. 22B and 22B is performed.

  The strain sensing element 50 including the first magnetic layer 10 is formed on the first conductive layer (conductive layer 61f) on the sacrificial layer 114l (step S140). For example, the processing described with reference to FIGS. 23A to 24B is performed.

  A second conductive layer (conductive layer 62f) to be the second wiring layer 62 is formed on the strain sensing element 50 (step S150). For example, the processing described with reference to FIGS. 27A to 28B is performed.

  In the interlayer insulating layer, a first wiring 61c that electrically connects the first conductive layer (conductive layer 61f) to the semiconductor substrate 111, and a second conductive layer (conductive layer 62f) that is electrically connected to the semiconductor substrate 111. The second wiring 62c to be formed is formed (step S160). For example, with respect to FIGS. 18 (a), 18 (b), 19 (a), 19 (b), 21 (a), 21 (b), 25 (a), and 25 (b). Perform the process described. For example, step S160 is performed once or by a plurality of processes in at least one of the steps S110 to S150 and after step S150.

Then, the sacrificial layer 114l is removed (step S170). For example, the processing described with reference to FIGS. 29A and 29B is performed.
According to this embodiment, a method for manufacturing a highly sensitive pressure sensor can be provided.

  In the step of removing the sacrificial layer 114l (step S170), for example, the sacrificial layer 114l is removed (for example, etched) from the upper surface of the sacrificial layer 114l (the surface of the sacrificial layer 114l opposite to the semiconductor substrate 111). Including.

(Eighth embodiment)
FIG. 31 is a schematic view illustrating the configuration of a microphone according to the eighth embodiment.
As shown in FIG. 31, the microphone 410 according to the present embodiment includes an arbitrary pressure sensor according to the embodiment and a pressure sensor of a modification thereof. In this example, a pressure sensor 310 is used. Microphone 410 is incorporated at the end of portable information terminal 510. For example, the transducer thin film 64 in the pressure sensor 360 inside the microphone 410 is substantially parallel to the surface of the portable information terminal 510 on which the display unit 420 is provided. However, the embodiment is not limited to this, and the arrangement of the transducer thin film 64 is arbitrary.

  According to the present embodiment, the microphone 410 is highly sensitive to a wide range of frequencies.

  The microphone 410 is incorporated in the portable information terminal 510, but the embodiment is not limited thereto. The microphone 410 may be incorporated into, for example, an IC recorder or a pin microphone.

  According to the embodiment, a highly sensitive pressure sensor and microphone can be provided.

  The embodiments of the present invention have been described above with reference to specific examples. However, embodiments of the present invention are not limited to these specific examples. For example, regarding a specific configuration of each element such as a base, a sensor unit, a transducer thin film, a fixed unit, a strain sensing element, a magnetic layer, an intermediate layer, and a processing circuit included in a pressure sensor and a microphone, those skilled in the art The present invention is similarly implemented by appropriately selecting from known ranges, and is included in the scope of the present invention as long as similar effects can be obtained.

  Moreover, what combined any two or more elements of each specific example in the technically possible range is also included in the scope of the present invention as long as the gist of the present invention is included.

  In addition, all pressure sensors and microphones that can be implemented by those skilled in the art based on the pressure sensors and microphones described above as embodiments of the present invention are also included in the present invention as long as they include the gist of the present invention. Belongs to the range.

  In addition, in the category of the idea of the present invention, those skilled in the art can conceive of various changes and modifications, and it is understood that these changes and modifications also belong to the scope of the present invention. .

  As mentioned above, although some embodiment of this invention was described, these embodiment is shown as an example and is not intending limiting the range of invention. These novel embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the scope of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are included in the scope of the invention described in the claims and the equivalents thereof. Further, the above-described embodiments can be implemented in combination with each other.

  DESCRIPTION OF SYMBOLS 10 ... 1st magnetic layer, 10B ... 3rd magnetic layer, 10C ... 5th magnetic layer, 10a ... Magnetic laminated film, 10b ... High magnetostrictive magnetic film, 11 ... Magnetization direction, 20 ... 2nd magnetic layer, 20B ... 4th Magnetic layer, 20C ... sixth magnetic layer, 21, 22 ... magnetization direction, 30 ... intermediate layer (first intermediate layer), 30B ... second intermediate layer, 30C ... third intermediate layer, 41 ... buffer layer, 42 ... anti Ferromagnetic layer, 43 ... magnetic layer, 44 ... Ru layer, 45 ... cap layer, 50, 50a to 50d ... strain sensing element, 50A ... first strain sensing element, 50B ... second strain sensing element, 50C ... third strain Detecting element, 50f ... laminated film, 50s ... strain resistance changing part, 50sg ... signal, 51 ... first electrode, 52 ... second electrode, 54a, 54b ... insulating layer, 55a, 55b ... bias layer, 57 ... first wiring 57a-57d ... wiring 58 ... second wiring, 58a to 58d ... wiring, 61 ... first wiring layer, 61bf ... insulating film, 61f ... conductive layer, 61fa ... connection pillar, 62 ... second wiring layer, 62f ... conductive layer, 62fa, 62fb ... Connection pillar, 63 ... direction, 64 ... transduced thin film, 64A ... first transduced thin film, 64B ... second transduced thin film, 64Ba ... second film surface, 64Bb ... center of gravity, 64a ... film surface (first film surface) 64b ... centroid, 64c, 64d, 64e, 64f ... straight line, 64eg ... edge, 64fm ... transducer film, 65 ... insulating layer, 65f ... insulating film, 66 ... insulating layer, 66f ... insulating film, 66o, 66p ... Opening, 67, 67a to 67d ... fixing part, 67A ... first fixing part, 67B ... second fixing part, 70 ... hollow part, 70s ... base 71 ... Non-hollow part, 71a ... Base, 72 ... Sensor part, 72A ... First sensor part, 72B ... Second sensor part, 80, 81 ... Stress, 110 ... Semiconductor circuit part, 111 ... Semiconductor substrate, 111a ... Main 111b ... element region 112 ... transistor 112D ... drain 112G ... gate 112I ... element isolation insulating layer 112M ... semiconductor layer 112S ... source 113 ... processing circuit 114a, 114b, 114h, 114i ... interlayer insulation 114c, 114d, 114e, 114j, 114k ... connection pillar, 114f, 114g ... wiring part, 114l ... sacrificial film, 115 ... antenna, 116 ... electrical wiring, 117 ... transmission circuit, 117a ... AD converter, 117b ... Manchester code Conversion unit, 117c... Switching unit, 117 ... timing controller, 117e ... data correction unit, 117f ... synchronization unit, 117g ... determination unit, 117h ... voltage controlled oscillator, 117r ... reception circuit, 118 ... reception unit, 118a ... storage unit, 118b ... central processing unit, 118d ... electronic Equipment 310, 320, 321, 330, 331, 332, 340, 360, 361 ... pressure sensor, 410 ... microphone, 420 ... display unit, 510 ... portable information terminal, sg1, sg2 ... first and second signals, w1 , W2 ... width

Claims (6)

A substrate;
A first sensor unit provided on the substrate;
A processing circuit;
With
The first sensor unit includes:
A flexible first transducer thin film having a first membrane surface;
Provided on the first film surface at a position different from the center of gravity of the first film surface, and provided between the first magnetic layer, the second magnetic layer, and the first magnetic layer and the second magnetic layer. A first non-magnetic first intermediate layer, and a first strain sensing element,
The third magnetic layer, the fourth magnetic layer, the third magnetic layer, and the fourth magnetic layer are provided on a position different from the center of gravity and spaced from the first strain sensing element on the first film surface. A second non-magnetic second intermediate layer provided between the second strain sensing element,
Including
The first magnetic layer, the first intermediate layer, and the second magnetic layer are arranged in a direction perpendicular to the first film surface,
The third magnetic layer, the second intermediate layer, and the fourth magnetic layer are arranged in a direction perpendicular to the first film surface,
The magnetization direction of the third magnetic layer is along one of the magnetization direction of the first magnetic layer and the magnetization direction of the second magnetic layer,
The magnetization direction of the fourth magnetic layer is along the other of the magnetization direction of the first magnetic layer and the magnetization direction of the second magnetic layer,
The second strain sensing elements are arranged along an edge of the first strain sensing element and the first film surface,
A straight line connecting the first strain sensing element and the center of gravity is inclined with respect to a straight line connecting the second strain sensing element and the center of gravity;
The processing circuit is a pressure sensor that weights and adds a first signal obtained from the first strain sensing element and a second signal obtained from the second strain sensing element.   2. The pressure sensor according to claim 1, wherein the first sensor unit further includes a fixing unit that is connected to an edge of the first transducer thin film and fixes the edge to the base. 3.   3. The pressure sensor according to claim 2, wherein the fixing portion fixes a plurality of symmetrical portions with respect to the center of gravity of the edge portion of the first transducer thin film to the base body.   The pressure sensor according to claim 2, wherein the fixing portion continuously fixes an edge portion of the first transducer thin film to the base. A second sensor unit provided on the base at a position different from the first sensor unit;
The second sensor unit is
A flexible second transducer thin film having a second membrane surface;
A fifth magnetic layer, a sixth magnetic layer, and a nonmagnetic third intermediate layer provided between the fifth magnetic layer and the sixth magnetic layer, provided on the second film surface; A third strain sensing element including:
Including
The fifth magnetic layer, the third intermediate layer, and the sixth magnetic layer are arranged in a direction perpendicular to the second film surface,
The width of the second transducer thin film along the direction parallel to the second film surface passing through the center of gravity of the second film surface of the second transducer thin film is the first width of the first transducer thin film. 5. The pressure sensor according to claim 1, wherein the first transducer thin film has a width different from a width of the first transducer thin film along a direction parallel to the first film surface through the center of gravity of the film surface.   A microphone provided with the pressure sensor according to claim 1.

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