JP5852541B2 - 磁気抵抗センサーのための磁気バイアス構造 - Google Patents

磁気抵抗センサーのための磁気バイアス構造 Download PDF

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JP5852541B2
JP5852541B2 JP2012224695A JP2012224695A JP5852541B2 JP 5852541 B2 JP5852541 B2 JP 5852541B2 JP 2012224695 A JP2012224695 A JP 2012224695A JP 2012224695 A JP2012224695 A JP 2012224695A JP 5852541 B2 JP5852541 B2 JP 5852541B2
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magnetic
sensor
lower layer
layer
stack
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JP2013084338A (ja
JP2013084338A5 (enExample
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淡河　紀宏
紀宏 淡河
浩二 阪本
浩二 阪本
岡崎　幸司
幸司 岡崎
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エイチジーエスティーネザーランドビーブイ
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3929—Disposition of magnetic thin films not used for directly coupling magnetic flux from the track to the MR film or for shielding
    • G11B5/3932—Magnetic biasing films
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Magnetic Heads (AREA)
  • Hall/Mr Elements (AREA)
JP2012224695A 2011-10-11 2012-10-10 磁気抵抗センサーのための磁気バイアス構造 Active JP5852541B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/271,015 2011-10-11
US13/271,015 US8339753B1 (en) 2011-10-11 2011-10-11 Magnetic bias structure for magnetoresistive sensor

Publications (3)

Publication Number Publication Date
JP2013084338A JP2013084338A (ja) 2013-05-09
JP2013084338A5 JP2013084338A5 (enExample) 2015-11-26
JP5852541B2 true JP5852541B2 (ja) 2016-02-03

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JP2012224695A Active JP5852541B2 (ja) 2011-10-11 2012-10-10 磁気抵抗センサーのための磁気バイアス構造

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US (1) US8339753B1 (enExample)
JP (1) JP5852541B2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8964336B2 (en) * 2012-09-06 2015-02-24 HGST Netherlands B.V. Easy axis hard bias structure
JP2014204853A (ja) * 2013-04-12 2014-10-30 株式会社ユニバーサルエンターテインメント 遊技機
JP2014204858A (ja) * 2013-04-12 2014-10-30 株式会社ユニバーサルエンターテインメント 遊技機
JP2014204855A (ja) * 2013-04-12 2014-10-30 株式会社ユニバーサルエンターテインメント 遊技機
JP2014204859A (ja) * 2013-04-12 2014-10-30 株式会社ユニバーサルエンターテインメント 遊技機
JP2014204856A (ja) * 2013-04-12 2014-10-30 株式会社ユニバーサルエンターテインメント 遊技機
US9030786B2 (en) 2013-07-23 2015-05-12 HGST Netherlands B.V. Magnetic head having a soft magnetic layer with a close-packed plane thereof being parallel or oblique to an air bearing surface
US10777222B1 (en) * 2020-02-14 2020-09-15 Western Digital Technologies, Inc. Two-dimensional magnetic recording (TDMR) read head structure with different stacked sensors and disk drive incorporating the structure

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7116527B1 (en) 1996-09-30 2006-10-03 Kabushiki Kaisha Toshiba Magnetoresistance effect device having hard magnetic film structural body
US6185081B1 (en) 1999-06-30 2001-02-06 Read-Rite Corporation Bias layers which are formed on underlayers promoting in-plane alignment of the c-axis of cobalt used in magnetoresistive transducers
US6888706B2 (en) 2001-08-08 2005-05-03 Alps Electric Co., Ltd. Magnetic sensing element having hard bias layer formed on bias underlayer and process for manufacturing the same
JP2004079058A (ja) 2002-08-14 2004-03-11 Toshiba Corp 垂直磁気記録媒体及び磁気記録再生装置
US6876525B2 (en) 2002-08-27 2005-04-05 International Business Machines Corporation Giant magnetoresistance sensor with stitched longitudinal bias stacks and its fabrication process
JP4284049B2 (ja) 2002-09-25 2009-06-24 株式会社日立グローバルストレージテクノロジーズ 磁気抵抗効果センサー及び磁気抵抗効果型ヘッド及びその製造方法
US7111385B2 (en) * 2003-09-30 2006-09-26 Hitachi Global Storage Technologies Method for improving hard bias properties of layers in a magnetoresistive sensor
US7342752B1 (en) * 2004-01-31 2008-03-11 Western Digital (Fremont), Llc Magnetoresistive read head having a bias structure with at least one dusting layer
US7639457B1 (en) * 2004-02-27 2009-12-29 Western Digital (Fremont), Llc Magnetic sensor with underlayers promoting high-coercivity, in-plane bias layers
US7440242B2 (en) 2004-06-30 2008-10-21 Hitachi Global Storage Technologies Netherlands B.V. Methods and apparatus for improved read sensors of the CPP type using a multi-layered seed layer structure having a nitrogenated nickel-tantalum layer
US7397640B2 (en) 2004-06-30 2008-07-08 Hitachi Global Storage Technologies Netherlands B.V. Methods and apparatus for improved read sensors using a multi-layered seed layer structure having a nitrogenated nickel-tantalum layer
US7428129B2 (en) 2004-06-30 2008-09-23 Hitachi Global Storage Technologies Amsterdam Methods and apparatus for improved hard magnet properties in magnetoresistive read heads using a multi-layered seed layer structure
US7259941B2 (en) 2004-10-27 2007-08-21 Hitachi Global Storage Technologies Netherlands B.V. Magnetoresistive sensor having a high coercivity hard bias structure
US7502209B2 (en) 2005-10-24 2009-03-10 Hitachi Global Storage Technologies Netherlands B.V. Read sensors having nitrogenated hard bias layers and method of making the same
US7440243B2 (en) 2005-10-24 2008-10-21 Hitachi Global Storage Technologies Read sensors of the CPP type having nitrogenated hard bias layers and method of making the same
US7773348B2 (en) * 2006-03-02 2010-08-10 Hitachi Global Storage Technologies Netherlands B.V. High coercivity hard magnetic seedlayer
US20080137237A1 (en) * 2006-12-12 2008-06-12 Hitachi Global Storage Technologies Magnetoresistive sensor having a hard bias buffer layer, seed layer structure providing exceptionally high magnetic orientation ratio
US7848065B2 (en) * 2006-12-22 2010-12-07 Hitachi Global Storage Technologies Netherlands B.V. Magnetoresistive sensor having an anisotropic hard bias with high coercivity
JP2008243289A (ja) 2007-03-27 2008-10-09 Tdk Corp 磁気検出素子
US8749925B2 (en) 2007-12-27 2014-06-10 HGST Netherlands, B.V. Protecting hard bias magnets during a CMP process using a sacrificial layer
US9034149B2 (en) * 2009-05-01 2015-05-19 Headway Technologies, Inc. Method for fabricating a high coercivity hard bias structure for magnetoresistive sensor
US8507113B2 (en) * 2009-06-09 2013-08-13 Canon Anelva Corporation Magnetic sensor stack body, method of forming the same, film formation control program, and recording medium

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JP2013084338A (ja) 2013-05-09
US8339753B1 (en) 2012-12-25

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