JP5825415B2 - Sensor package and manufacturing method thereof - Google Patents

Description

  The present invention relates to a sensor package, and more particularly to a sensor package having a protective material on the active surface side of a sensor and a method for easily manufacturing the sensor package.

  Conventionally, image sensors such as CCD and CMOS, and sensors such as acceleration sensors have been used for various purposes. For example, in an image sensor, one surface of a semiconductor chip is an active surface on which a light receiving element that performs photoelectric conversion is disposed. Such a sensor is mounted on a wiring board or the like, and connected to the wiring board via connection means such as wire bonding in order to output a signal from the sensor to a signal processing system. An image sensor or the like is configured by providing and sealing a protective material, for example, an infrared cut filter, so as to be provided (Patent Document 1).

JP-A-8-88339

However, the conventional image pickup device easily contaminates the active surface of the sensor in a series of manufacturing processes such as a mounting process and a sealing process, which hinders improvement in yield.
Further, since wire bonding is performed at the time of mounting, it is necessary to expand the surface direction. For this reason, there is a limit to miniaturization, and there is a limit to the efficiency of manufacturing.
The present invention has been made in view of the above circumstances, and an object thereof is to provide a small and highly reliable sensor package and a manufacturing method for easily manufacturing such a sensor package. .

In order to solve such a problem, the sensor package of the present invention includes an image sensor and an epoxy having a predetermined height on the surface of the image sensor so as to face the active surface of the surface of the image sensor via a gap. In a protective material made of glass having a thickness of 400 μm to 1000 μm fixed by a resin-containing sealing member, a wiring containing Cu respectively disposed on the front surface and the back surface of the image sensor, and a region outside the active surface A plurality of front and back conductive vias penetrating the image sensor and connected to the desired wiring on both sides, the back wiring has external terminals, and the back wiring, the front and back conductive vias, and the external terminals a structure that is integral to the external terminal comprises a solder made of the external terminals projecting member positioned in a region corresponding to the back surface of said active surface, The gap between the active surface of the image sensor and the protective material is set by the sealing member, and the sealing member is located outside the front and back conductive vias with respect to the active surface. The front and back conductive vias are tapered such that the opening diameter on the back side is wider than the opening diameter on the front side, and the titanium thin film layer is interposed between the external terminal and the external terminal convex member. .
As another aspect of the present invention, the gap has a thickness in the range of 1 to 20 μm.
As another aspect of the present invention, the protective material is an infrared cut filter.

The method for manufacturing a sensor package according to the present invention includes a step of partitioning a wafer into multiple impositions, producing an image sensor for each imposition, and Cu containing in an area outside the active surface of the image sensor surface for each imposition. A plurality of fine through holes having a tapered shape in which the opening diameter on the back surface side of the image sensor is wider than the opening diameter on the front surface side so as to correspond to a desired position of the wiring , and then the conductive material containing Cu The front and back conductive vias are connected to the fine through-holes with the material, the wiring is connected to the front and back conductive vias on the back of the image sensor, and the external terminals are connected to the wiring. Forming a titanium thin film layer on the external terminal on the back surface of the image sensor for each imposition so as to be located in a region corresponding to the back surface of the active surface; A step of forming an external terminal convex member using a solder on the thin film layer, and a glass protective material having a wafer size of 400 μm to 1000 μm so as to face the active surface of the multi-sided image sensor, For each imposition, the sealing is performed between the active surface of the image sensor and the protective material by fixing the active surface to an epoxy resin-containing sealing member disposed outside the front and back conductive vias. The structure includes a step of forming a predetermined gap set by the height of the stop member, and a step of dicing the wafer with multiple faces and the protective material.
As another aspect of the present invention, in a state where a gap of a predetermined size is secured between the protective member and the active surface of the image sensor by pressing the protective material against the semi-cured sealing member. The sealing member is cured to fix the protective material and the sealing member.

Since the sensor package of the present invention includes the external terminal convex member, it can be easily mounted on the wiring board, does not require wire bonding, suppresses the spread in the surface direction, and reduces the size of the device. It is possible to increase the manufacturing efficiency. In addition, when the active surface of the sensor is prevented from being contaminated by the protective material, and the sensor package is contaminated during the mounting process, the sensor package in a good state can be obtained simply by cleaning the protective material surface, and the production yield can be obtained. Will improve.
In the sensor package manufacturing method of the present invention, it is possible to perform assembly at the wafer level to manufacture the sensor and fix the protective material, and then dice to obtain the sensor package, so that it is not necessary to assemble each sensor package. Therefore, the process management is easy and the manufacturing cost can be reduced.

It is a schematic sectional drawing which shows one Embodiment of the sensor package of this invention. It is a schematic sectional drawing which shows other embodiment of the sensor package of this invention. It is a schematic sectional drawing which shows other embodiment of the sensor package of this invention. It is a schematic sectional drawing which shows other embodiment of the sensor package of this invention. It is a schematic sectional drawing which shows other embodiment of the sensor package of this invention. It is a schematic sectional drawing which shows other embodiment of the sensor package of this invention. It is a schematic sectional drawing which shows other embodiment of the sensor package of this invention. It is process drawing which shows one Embodiment of the manufacturing method of the sensor package of this invention. It is process drawing which shows one Embodiment of the manufacturing method of the sensor package of this invention.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
[Sensor package]
FIG. 1 is a schematic cross-sectional view showing an embodiment of a sensor package of the present invention. In FIG. 1, a sensor package 1 of the present invention includes a sensor 11, a protective material 31 fixed to a front surface 11a of the sensor 11 by a sealing member 32, and wirings disposed on the front surface 11a and the back surface 11b of the sensor 11, respectively. 13 and 17 and a plurality of front and back conductive vias 16 penetrating the sensor 11 and connected to desired wirings 13 and 17 on both sides, and the wiring 17 on the back surface 11b has an external terminal 18, and the external terminal 18 Includes an external terminal convex member 21.

The sensor 11 constituting the sensor package 1 of the present invention has an active surface 12 on the surface 11a, and the active surface 12 is connected to a desired wiring 13 disposed on the surface 11a in the outer region. ing. The sensor 11 is not particularly limited, and may be an image sensor such as a CCD or CMOS, or various MEMS (Micro Electromechanical System) sensors such as an acceleration sensor, a pressure sensor, or a gyro sensor. The active surface 12 means a region that exhibits a desired detection function of the sensor, such as a region where light receiving elements that perform photoelectric conversion are arranged to form a plurality of pixels.
The front and back conductive vias 16 are disposed in the plurality of fine through holes 14 provided in the sensor 11 in a region outside the active 12 via an insulating layer 15. The front and back conductive vias 16 are connected to the wiring 13 disposed on the front surface 11a of the sensor 11 and the wiring 17 disposed on the back surface 11b. The fine through hole 14 is filled with an insulating material to form an insulating material layer 19. The insulating material layer 19 covers the wiring 17 and has an opening through which the external terminal 18 is exposed. Have.

The wiring 17 disposed on the back surface 11 b of the sensor 11 has an external terminal 18, and the external terminal is projected on the external terminal 18 via a stress relaxation conductive layer 22, a conductive layer 23, and a barrier metal layer 24. A member 21 is provided.
As the protective material 31 constituting the sensor package 1 of the present invention, for example, a material such as glass, polyimide, or polycarbonate can be used, and a material having an infrared absorption function is also used as an infrared cut filter. May be. The thickness of the protective material 31 can be set, for example, in the range of 400 to 1000 μm in consideration of the material, light transmittance, and the like. Further, the thickness of the gap 33 existing between the protective material 31 and the active surface 12 of the sensor 11 can be set in the range of 1 to 20 μm, for example.

For example, a silicone resin, an epoxy resin, an acrylic resin, or the like can be used as the sealing member 32 for fixing the protective material 31 as described above to the surface 11a of the sensor 11 via a predetermined gap 33.
The wirings 13 and 17, the front and back conductive vias 16, and the external terminals 18 included in the sensor package 1 may be conductive materials such as Cu, Ag, Au, and Sn.
The plurality of fine through holes 14 of the sensor 11 have an opening diameter of 1 to 50 μm, preferably about 5 to 30 μm. The shape of the fine through hole 14 is a taper shape with a wide opening diameter on the back surface 11b side in the illustrated example, but is not limited thereto, and is a straight shape having a substantially constant inner diameter in the thickness direction, and substantially in the thickness direction. It may be a shape having an inner diameter that is narrow at the center.

The insulating layer 15 disposed on the inner wall surface of the fine through-hole 14 can be a single layer film such as a silicon dioxide film, a silicon nitride film, a titanium nitride film, or an insulating layer such as a polyimide resin thin film. 15 may be a laminate of a metal thin film such as titanium as a base conductive thin film.
The insulating material layer 19 filled in the fine through-holes 14 and disposed so as to cover the wiring 17 is, for example, an organic material such as polybenzoxazole resin, epoxy resin, benzocyclobutene resin, cardo resin, or polyimide resin. It can be a material or the like.
The external terminal convex member 21 disposed on the external terminal 18 is for mounting the sensor package 1 on a wiring board or the like, and may be made of a material such as solder, Au, or Ag. Although the shape and dimensions of the external terminal convex member 21 are not particularly limited, for example, the height can be set in the range of 70 to 150 μm.

The stress relaxation conductive layer 22 interposed between the external terminal 18 and the external terminal convex member 21 has a stress caused by the difference in thermal contraction between the sensor package 1 mounted on the wiring board and the like and the external terminal convex member 21. This is intended to prevent damage due to concentration. Such a stress relaxation conductive layer 22 can be formed by dispersing conductive particles in, for example, synthetic rubber, resin, or the like. Specifically, it can be formed using a silicone Ag paste, an epoxy Ag paste, a urethane Ag paste, or the like. The thickness of the stress relaxation conductive layer 22 can be appropriately set according to the material used, the area, and the like, and can be set, for example, in the range of 10 to 50 μm.
For the conductive layer 23 interposed between the external terminal 18 and the external terminal convex member 21, for example, Cu can be used. The barrier metal layer 24 can be, for example, a laminated film of a Ni layer and an Au layer, a laminated film of a Ti layer and a Cr layer, or the like from the conductive layer 23 side.

Since the sensor package 1 of the present invention as described above is provided with the external terminal convex member 21, it is easy to mount on the wiring board, wire bonding is unnecessary, and the spread in the surface direction is suppressed, The apparatus can be miniaturized and the manufacturing efficiency can be increased. Further, when the protective surface 31 prevents the active surface 12 of the sensor 11 from being contaminated and the sensor package 1 is contaminated during the mounting process or the like, the sensor package 1 in a good state can be obtained simply by cleaning the protective material 31. As a result, the manufacturing yield is improved.
The sensor package of the present invention is not limited to the above-described embodiment. For example, as shown in FIG. 2, a configuration in which a notch 18 a exists in the center of the external terminal 18 and the stress relaxation conductive layer 22 is fixed to the insulating layer 15 together with the external terminal 18 may be employed. By setting it as such a structure, the adhesiveness of the stress relaxation conductive layer 22 can be made higher.

Further, as shown in FIG. 3, one insulating material layer 19 ′ may be further disposed on the insulating material layer 19. With such a structure, the conductive layer 23 and the barrier metal layer 24 interposed between the external terminal 18 and the external terminal convex member 21 are protected, and the reliability becomes higher. Such an insulating material layer 19 ′ may be made of the material mentioned in the above-described insulating resin layer 19, and the thickness can be appropriately set within a range of 10 to 50 μm, for example.
Further, as shown in FIG. 4, the external terminal convex member 21 may be disposed by interposing only the barrier metal layer 24 without interposing the stress relaxation conductive layer 22 and the conductive layer 23.

Further, as shown in FIG. 5, the external terminal convex member 21 may be disposed without the stress relaxation conductive layer 22, the conductive layer 23, and the barrier metal layer 24, but with the titanium thin film layer 25 instead. Good. The titanium thin film layer 25 can improve the adhesion between the external terminal 18 and the external terminal convex member 21, and a highly reliable sensor package is possible. A chromium thin film or the like can be used in place of the titanium thin film layer 25.
Further, as shown in FIG. 6, a conductive layer 26 may be interposed between the titanium thin film layer 25 and the external terminal convex member 21. For example, the conductive layer 26 may be made of Cu, Ni, or the like.

Further, as shown in FIG. 7, a conductive material layer 16 ′ may be formed by filling a fine through hole 14 provided with front and back conductive vias 16 with a conductive material. As the conductive material, metals such as Cu, Au, and Ag, conductive paste, and the like can be used. An insulating material layer 19 is disposed so as to cover the surface of the conductive material layer 16 ′ and the wiring 17.
The sensor package of the present invention described above is an example, and the present invention is not limited to these embodiments. For example, a transparent protective film may be provided so as to cover the active surface 12 and the wiring 13. As this transparent protective film, for example, a thin film having a thickness of about 0.1 to 10 μm made of silicon oxide, silicon nitride or the like can be used.

[Method for manufacturing sensor package]
Next, the manufacturing method of the sensor package of this invention is demonstrated.
FIG. 8 and FIG. 9 are process diagrams showing an embodiment of the sensor package manufacturing method of the present invention, taking the sensor package 1 shown in FIG. 1 as an example.
First, a silicon wafer 51 having a silicon oxide film 52 formed on one surface is partitioned into multiple surfaces, and the sensor 11 is produced for each surface 51A (FIG. 8A). The sensor 11 is manufactured using, for example, a MEMS (Micro Electromechanical System) method.

  Next, a transparent protective film 53 is formed so as to cover the active surface 12 and the wiring 13 of the sensor 11, and thereafter, for each imposition 51 </ b> A, from the back surface side of the sensor 11, a portion (wiring) outside the active surface 12. A plurality of fine holes 14 ′ are formed in a portion where 13 is disposed (FIG. 8B). The wiring 13 is exposed in the fine hole 14 'thus formed. The transparent protective film 53 can be, for example, a thin film such as silicon oxide or silicon nitride formed by a vacuum film formation method such as a sputtering method. The fine holes 14 ′ are formed, for example, by forming a mask pattern on the silicon wafer 51 and applying ICP-RIE (Inductively Coupled Plasma-Reactive Ion Etching), which is a dry etching method using plasma to the exposed portion. : Inductively coupled plasma-reactive ion etching) method. Alternatively, the fine holes 14 'can be formed by a sandblasting method, a wet etching method, or a femtosecond laser method. The opening diameter of the fine hole 14 ′ can be set in the range of 1 to 50 μm, preferably 5 to 30 μm.

  Next, the insulating layer 15 is formed on the back surface of the silicon wafer 51 including the inner wall surface of the fine through hole 14. Thereafter, for each imposition 51A, the transparent protective film 53 at a position corresponding to the fine hole 14 ′ is removed by etching by the RIE method from the surface (active surface 12) side of the sensor 11, and further, the wiring 13 Are removed by wet etching, and the insulating layer 15 is etched away by RIE to form fine through holes 14 (FIG. 8C). The insulating layer 15 can be a silicon dioxide film, a silicon nitride film, a titanium nitride film, or the like formed by a vacuum film forming method such as a plasma CVD method, a coating method using a silicon oxide precursor solution, or the like.

  Next, the front and back conductive vias 16 are formed on the insulating layer 15 in the fine through hole 14, and the wiring 17 and the external terminal 18 are formed on the insulating layer 15 on the back surface of the silicon wafer 51 (FIG. 8D). The formation of the front and back conductive vias 16, the wirings 17 and the external terminals 18 is performed when the insulating layer 15 is made of a material that is difficult to apply a catalyst for electroless plating, such as a silicon dioxide film. A thin film such as a TiN thin film or a Cu thin film is formed by MOCVD (Metal Organic-Chemical Vapor Deposition) method or the like to form a base conductive thin film, and then patterning for forming the wiring 17 and the external terminal 18 is performed on the base conductive thin film. Apply. Next, a conductive layer is formed by electrolytic plating using the base conductive thin film as a power feeding layer, and front and back conductive vias 16, wirings 17 and external terminals 18 are formed. Further, when the insulating layer 15 is made of a material other than the silicon dioxide film, a base conductive thin film is formed by electroless plating, and then the front and back conductive vias 16 and wiring are formed by patterning and electrolytic plating in the same manner as described above. 17 and the external terminal 18 are formed.

Next, a resist pattern (insulating material layer 19) is formed so as to fill the inside of the fine through hole 14, cover the wiring 17, and expose only the external terminal 18 (FIG. 9A). The resist pattern is formed by, for example, applying photosensitive polybenzoxazole resin, epoxy resin, benzocyclobutene resin, cardo resin, polyimide resin or the like to the back surface of the silicon wafer 51, and then exposing so that the external terminals 18 are exposed. It can be formed by developing.
Next, a conductive paste (silicone Ag paste, epoxy Ag paste, urethane Ag paste, etc.) having stress relaxation properties is applied on the exposed external terminals 18 by screen printing or the like to form the stress relaxation conductive layer 22. (FIG. 9B).

Next, a conductive layer 23 is formed on the stress relaxation conductive layer 22 by electrolytic plating, a barrier metal layer 24 is formed so as to cover the conductive layer 23, and then the external terminal convex member 21 is formed (FIG. 9). (C)). The barrier metal layer 24 can be formed by an electrolytic plating method, a vacuum film forming method, or the like. The external terminal convex member 21 can be formed by, for example, a method of performing reflow after performing paste printing, ball mounting, electrolysis or electroless plating.
Thereafter, the protective material 31 is fixed to the active surface 12 side of the silicon wafer 51 by the sealing member 32 through the predetermined gap 33 so as to face the active surface 12 (FIG. 9D). For example, a silicone resin, an epoxy resin, an acrylic resin, or the like can be used as the sealing member 32. The sealing member 32 is formed so as to surround the active surface 12 and the wiring 13, and the protective material 31 is pressed to form a gap. It is possible to fix the sealing member 32 by curing the sealing member 32 in a state in which 33 is secured.
Then, the sensor package 1 as shown in FIG. 1 is obtained by dicing the multi-sided silicon wafer 51 and the protective material 31.

  In addition, in the method for manufacturing the sensor package as shown in FIG. 2, the notched portion 18 a may be formed at the center of the external terminal 18 when the external terminal 18 is formed. It is the same.

  Further, in the method of manufacturing the sensor package as shown in FIG. 3, after forming the stress relaxation conductive layer 22, the conductive layer 23, and the barrier metal layer 24 on the external terminal 18, the insulating material layer 19 is covered. Photosensitive polybenzoxazole resin, epoxy resin, benzocyclobutene resin, cardo resin, polyimide resin or the like is applied to the back surface, and then exposed and developed so that the barrier metal layer 24 is exposed, thereby forming the insulating material layer 19 ′. The manufacturing method of the sensor package 1 is the same as that described above except that the external terminal convex member 21 is formed after that.

The method for manufacturing the sensor package as shown in FIG. 4 is basically the same as the method for manufacturing the sensor package 1 except that the stress relaxation conductive layer 22 is not formed.
Further, the manufacturing method of the sensor package as shown in FIG. 5 forms only the titanium thin film layer 25 on the external electrode 18 without forming the stress relaxation conductive layer 22, the conductive layer 23, and the barrier metal layer 24, The manufacturing method of the sensor package 1 is the same as that described above except that the external terminal convex member 21 is formed on the titanium thin film layer 25.

Further, in the method of manufacturing the sensor package as shown in FIG. 6, the titanium thin film layer 25 and the conductive layer 26 are formed on the external electrode 18 without forming the stress relaxation conductive layer 22, the conductive layer 23, and the barrier metal layer 24. The manufacturing method of the sensor package 1 is the same as that described above except that the external terminal convex member 21 is formed on the titanium thin film layer 25 and the conductive layer 26.
Further, in the method of manufacturing the sensor package as shown in FIG. 7, after the front and back conductive vias 16 are formed, a resist pattern having an opening at the position of the fine through hole 14 is formed on the back surface of the silicon wafer 51. The manufacturing method of the sensor package 1 is the same as that described above except that the front and back conductive vias 16 and the wirings 17 are used as a power feeding layer, and the conductive material layer 16 ′ is formed by filling the fine through-holes 14 by electrolytic plating. It is.

In the sensor package manufacturing method of the present invention as described above, batch assembly is possible in which a sensor is manufactured and a protective material is fixed at a wafer level. Thereafter, dicing is performed to obtain a sensor package. Assembly is unnecessary, process management is easy, and manufacturing costs can be reduced.
In addition, the manufacturing method of the sensor package of the above-mentioned this invention is an illustration, and this invention is not limited to these embodiment. For example, the external terminal convex member 21 may be formed after the protective material 31 is fixed, or the external terminal convex member 21 may be formed after dicing.

Next, the present invention will be described in more detail with specific examples.
First, a silicon wafer having a thickness of 625 μm was prepared, and was divided into multiple faces with a square having a side of 5 mm. The thermal expansion coefficient of the above silicon wafer in the XY direction (a plane parallel to the surface of the silicon wafer) was 3 ppm.
Next, a silicon oxide film (thickness 5 μm) was formed on one surface of the silicon wafer by plasma CVD. Next, for each imposition, a sensor (active surface dimension: 4000 μm × 4000 μm) is produced on the silicon oxide film by a conventional method, and then back-grinding is performed from the back surface of the silicon wafer to a thickness of 200 μm. . Around the active surface, wirings having pads were disposed, and the pads had a diameter of 100 μm and a total of 100 pads.
Next, a silicon oxide film (thickness: 5 μm) was formed by plasma CVD on the active surface side of the sensor to form a transparent protective film covering the active surface and the wiring.

Next, a silicon nitride film (thickness 5 μm) was formed by plasma CVD on the surface opposite to the active surface of the sensor. Next, a positive photoresist (OFPR-800 manufactured by Tokyo Ohka Kogyo Co., Ltd.) is applied to the entire surface of the silicon nitride film, and exposed and developed through a photomask for forming fine through holes, thereby forming a resist pattern. Formed. Next, the silicon nitride film exposed from the resist pattern was dry-etched using CF ₄ as an etching gas, and then the resist pattern was peeled off to form a mask pattern made of silicon nitride. In the mask pattern, 100 circular openings each having a diameter of 10 μm were formed in a region outside the sensor at a pitch of 100 μm for each imposition. Each circular opening was located at a position corresponding to 100 aluminum pads arranged around the active surface through a silicon wafer.

Next, the silicon wafer exposed from the mask pattern on the surface opposite to the active surface of the sensor was dry-etched using an ICP-RIE apparatus using SF ₆ as an etching gas until the surface aluminum pad was exposed. Thereby, micropores were formed, and the micropores were tapered with an opening diameter of 15 μm and an internal diameter of 10 μm.
Next, a silicon oxide film was formed by plasma CVD on the surface opposite to the active surface of the sensor (including the inside of the microhole) to form an insulating layer. This insulating layer was 2 μm on the silicon wafer surface and 1 μm on the inner wall surface of the fine holes.

Next, for each imposition, from the active surface side, the transparent protective film at a position corresponding to the fine hole is removed by etching by RIE, the aluminum pad is removed by wet etching, and the insulating layer is further removed. Etching was removed by RIE, thereby exposing the fine holes and forming fine through holes.
Thereafter, a base conductive thin film having a thickness of 0.3 μm was formed from one surface of the silicon wafer (a side surface opposite to the active surface of the sensor) by Ti—Cu in this order. Next, a dry film resist (APR manufactured by Asahi Kasei Co., Ltd.) was laminated on the underlying conductive thin film. Next, the resist pattern (thickness 15 μm) was formed by exposure and development through a photomask for forming front and back conductive vias and wiring / external terminals. Using this resist pattern as a mask, electrolytic Cu plating is performed using the above-mentioned underlying conductive thin film as a power feeding layer, forming front and back conductive vias in the fine through holes, and wiring on the silicon wafer surface (the side opposite to the active surface of the sensor) And external terminals (diameter 500 μm) were formed.

Next, the resist pattern and the underlying conductive thin film are removed, and then a photosensitive solder resist (CR-8600 manufactured by Sumitomo Bakelite Co., Ltd.) containing polybenzoxazole resin on the silicon wafer surface (the side opposite to the active surface of the sensor). ), And exposure and development through a desired mask to form an insulating material layer in which only the external terminals are exposed.
Next, a silicone Ag paste (AGX manufactured by Toray Dow Corning Silicone Co., Ltd.) is applied by screen printing on the external terminal exposed in the opening (diameter 250 μm) of the insulating material layer, and cured. A stress relaxation conductive layer having a thickness of 40 μm was formed.
Next, a conductive layer having a thickness of 10 μm is formed on the stress relaxation conductive layer by electrolytic Cu plating, and an Ni layer (thickness of 3 μm) and an Au layer (thickness of 0.2 μm) are formed on the conductive layer by electrolytic plating. A barrier metal layer was formed.

Next, a solder ball having a diameter of 300 μm was mounted on the barrier metal layer by a ball mounting method to form an external terminal convex member.
Next, on the active surface side of the silicon wafer, a resin composition for a sealing member (World Rock manufactured by Kyoritsu Chemical Industry Co., Ltd.) is 60 μm wide and 20 μm high on each imposition boundary. It was applied and semi-cured. In this state, a glass substrate having a thickness of 500 μm was pressed against the sealing member so that a gap of 14 μm was formed between the active surface of the sensor, and the protective member was sealed by curing the sealing member.
As a result, a sensor package was fabricated at the wafer level.
Next, the multi-sided sensor package was diced to obtain the sensor package of the present invention. This sensor package had a size of 5 mm × 5 mm and a height of about 1 mm (including solder balls).

  The present invention can be applied in various fields where a small and highly reliable sensor is required.

DESCRIPTION OF SYMBOLS 1 ... Sensor package 11 ... Sensor 12 ... Active surface 13, 17 ... Wiring 14 ... Fine through-hole 15 ... Insulating layer 16 ... Front and back conduction via 16 '... Conductive material layer 18 ... External terminal 19, 19' ... Insulating material layer 21 ... External terminal convex member 22 ... Stress relaxation conductive layer 23 ... Conductive layer 24 ... Barrier metal layer 51 ... Silicon wafer

Claims (5)

Glass having a thickness of 400 μm to 1000 μm fixed to the image sensor surface by an epoxy resin-containing sealing member having a predetermined height so as to face the active surface of the image sensor surface through a gap. A plurality of front and back surfaces that pass through the image sensor in a region outside the active surface and are connected to the desired wiring on both sides. A conductive via, and a wiring on the back surface has an external terminal, and the wiring on the back surface, the front and back conductive vias and the external terminal are integrated, and the external terminal has a back surface of the active surface. The external terminal convex member made of solder located in a region corresponding to the above, and the gap between the active surface of the image sensor and the protective material The portion is set by the sealing member, and the sealing member is located in a region outside the front and back conductive vias with respect to the active surface, and the front and back conductive vias have an opening diameter on the back side. A sensor package having a taper shape wider than the opening diameter on the side, and a titanium thin film layer interposed between the external terminal and the external terminal convex member.   The sensor package according to claim 1, wherein the gap has a thickness in a range of 1 to 20 μm.   The sensor package according to claim 1, wherein the protective material is an infrared cut filter. Dividing the wafer into multiple impositions and producing an image sensor for each imposition;
For each imposition, a Cu-containing wiring is formed in a region outside the active surface of the image sensor surface, and a plurality of fine through-holes having a tapered shape in which the opening diameter on the back side of the image sensor is wider than the opening diameter on the surface side. The wiring is formed so as to correspond to a desired position of the wiring, and then a front and back conductive via is connected to the fine through hole with a conductive material containing Cu, and the front and back conductive via is connected to the back of the image sensor. A step of integrally forming an external terminal so as to connect the wiring to the wiring ;
For each imposition, a titanium thin film layer is formed on the external terminal on the back surface of the image sensor so as to be located in a region corresponding to the back surface of the active surface, and an external terminal convex member using solder on the titanium thin film layer Forming a step;
A glass protective material having a wafer size of 400 μm to 1000 μm in thickness so as to face the active surface of the multi-surface image sensor is placed outside the front and back conductive vias with respect to the active surface for each surface mounting. Adhering to the disposed epoxy resin-containing sealing member, and forming a predetermined gap set by the height of the sealing member between the active surface of the image sensor and the protective material;
A method of manufacturing a sensor package, comprising the step of dicing the wafer having multiple faces and the protective material.   The sealing member is cured by pressing the protective material against the semi-cured sealing member and a gap of a predetermined size is secured between the sealing member and the active surface of the image sensor. The method for manufacturing a sensor package according to claim 4, wherein a protective material and the sealing member are fixed.

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