JP5803560B2 - Semiconductor device - Google Patents

Description

  The present invention relates to a semiconductor device in which a cooler and a semiconductor element are stacked. More specifically, the present invention relates to a semiconductor device having a semiconductor element that exchanges current with an electric device such as a motor and a cooler that prevents heat generated by the current of the semiconductor element.

  Conventionally, a semiconductor element such as an inverter is used to control a current supplied to a power consuming device such as a motor. A semiconductor element is also used to control current from a device that generates electric power, such as a generator. Semiconductor devices that handle these currents generally generate a large amount of heat during use. Therefore, the semiconductor element and the cooler may be used in contact with each other. For example, in a hybrid vehicle, a device in which a large number of inverters and a large number of coolers are stacked is used for current control of a motor that generates power and generates power.

  Furthermore, there are cases where two or more power consuming devices or power generating devices are used together in one device. For example, a so-called two-motor type hybrid vehicle has a first motor that performs regenerative power generation by engine rotation and a second motor that is a power source for driving wheels. In such a case, the current levels of the two motors (power consuming device or power generating device) are not always the same. In the case of a two-motor hybrid vehicle, if the current level of the second motor is 10, the current level of the first motor is approximately 1 to 3.5. Naturally, if the current level is different, the amount of heat generated by the corresponding inverter (semiconductor element) is also different.

  In such a case, if each inverter (semiconductor element) is evenly cooled, a temperature difference occurs between the inverters. Due to this temperature difference, there may be a negative effect such as a difference in the progress of life between the two inverters, or a thermal stress in the cooler. As a conventional technique for overcoming this problem, there is a technique described in Patent Document 1. In the technology of this document, a difference is provided in the cooling capacity depending on the portion of the tube (cooler). An electronic component (semiconductor element) having a high heat generation amount is held in a portion of the tube having a high cooling capacity, and an electronic component having a low heat generation amount is held in a portion having a low cooling capacity. In this way, temperature differences between electronic components are eliminated.

Japanese Patent No. 4265510

  However, the conventional techniques described above have the following problems. When there is a difference in the amount of heat generated between the semiconductor elements as described above, it is necessary to ensure a considerably high cooling performance for the semiconductor element having the larger amount of generated heat. For this reason, not only the cooling performance of the cooler but also the heat dissipation of the semiconductor element itself is usually increased. And the cooling capacity of the part which hold | maintains the semiconductor element with the smaller calorific value among coolers is made small.

  Specific methods for increasing the heat dissipation performance of the semiconductor element itself include securing a sufficiently large heat dissipation area and decreasing the size of each semiconductor element and increasing the number instead. However, in terms of size, it cannot actually be reduced in size. This is because a certain size is required for the arrangement of block electrodes and control wiring, and for securing electrical characteristics such as withstand voltage and breakdown resistance. Therefore, a double-sided cooling type is adopted in order to increase the area of the heat radiation surface.

  However, the double-sided cooling type semiconductor device has a problem that it requires a large number of parts and processes. This is because it is necessary to remove the resin on both sides after the resin sealing, and an insulating plate is required on both sides when inserted into the cooler. Therefore, manufacturing is complicated and cost is high. On the other hand, partially reducing the cooling capacity of the cooler does not cause a reduction in the number of processes and costs.

  The present invention has been made to solve the above-described problems of the prior art. That is, the problem is that in a semiconductor device provided with a plurality of semiconductor elements having different heat generation amounts together with a cooler, both proper cooling performance according to the heat generation amount for each semiconductor element and reduction in the number of processes and costs are achieved. There is.

The semiconductor device of the present invention, which has been made for the purpose of solving this problem, is a circuit in which a cooler through which a refrigerant is passed and a semiconductor element are laminated, and a circuit that generates a large amount of heat during operation as a semiconductor element. In addition, a double-sided heat-dissipating semiconductor element in which both sides are heat-dissipating surfaces and both heat-dissipating surfaces are in contact with the cooler, and a circuit that generates a small amount of heat during operation, surface has its heat radiating surface is a heat radiating surface and a plurality of single-sided heat radiation semiconductor elements arranged in contact with the cooler, both single-sided heat dissipation semiconductor devices, also non-radiating surface of the radiating face opposite Arranged to contact the cooler .

  This semiconductor device is used by being connected to a large current load and a small current load. The circuit connected to the high current load generates a large amount of heat during operation, and the circuit connected to the small current load generates a small amount of heat during operation. Therefore, in the semiconductor device of the present invention, a double-sided heat-dissipating semiconductor element is arranged in a part connected to a high-current load, and a single-sided heat-dissipating semiconductor element is arranged in a part connected to a small-current load. Circuit. As a result, the structure is simplified while the necessary cooling performance is ensured as compared with the case where the entire apparatus is composed of double-sided heat dissipation semiconductor elements. In the present invention, the heat dissipation surface of the semiconductor element is in contact with the cooler is not limited to the case where the heat dissipation surface and the cooler are in direct contact with each other, but includes the case where the intermediate member such as an insulating member is sandwiched between them. .

A semiconductor device according to another aspect of the present invention is formed by laminating a cooler through which a refrigerant passes and a semiconductor element. The semiconductor element constitutes a circuit that generates a large amount of heat during operation. A double-sided heat-dissipating semiconductor element that is arranged so that both sides are heat-dissipating surfaces and both heat-dissipating surfaces are in contact with the cooler, and a circuit that generates a small amount of heat during operation, and one surface is the heat-dissipating surface by a plurality of single-sided heat radiation semiconductor elements whose radiating surface is placed in contact with the cooler, what part of the single-sided heat radiation semiconductor elements, among the one-side radiating semiconductor element and double-sided heat dissipation semiconductor devices in and endmost, the heat dissipation surface is in contact with the cooler with facing the other single-sided heat radiation semiconductor elements and the double-sided radiator semiconductor element, that the other surface are disposed so as not to contact the other of the cooler . This can reduce the number of required coolers. Furthermore, the remaining single-sided heat-dissipating semiconductor elements are such that both surfaces are in contact with the cooler and that the heat-dissipating surface is oriented in the same direction as the heat-dissipating surface of the single-sided heat-dissipating semiconductor element located at the end. It is desirable to be arranged in. Thereby, the burden of the cooler of the circuit part comprised by the single-sided heat dissipation semiconductor element is equalized.

  And it is desirable to have not only a single-sided heat dissipation semiconductor element but also a plurality of double-sided heat dissipation semiconductor elements, and the single-sided heat dissipation semiconductor elements and the double-sided heat dissipation semiconductor elements are alternately arranged. Thereby, the burden on the cooler can be made uniform as a whole semiconductor device.

According to still another aspect of the present invention , a semiconductor device is formed by laminating a cooler through which a refrigerant is passed and a semiconductor element. The semiconductor element forms a circuit that generates a large amount of heat during operation. , A double-sided heat-dissipating semiconductor element that is arranged so that both sides are heat-dissipating surfaces and both heat-dissipating surfaces are in contact with the cooler, and a circuit that generates a small amount of heat during operation, and one surface is a heat-dissipating surface and by a plurality of single-sided heat radiation semiconductor elements whose radiating surface is placed in contact with the cooler, a plurality of single-sided heat dissipating semiconductor devices, the heat radiation surfaces in contact with each cooler, the other surface Ru der what each other are placed in contact with each other. As a result, the inductance is reduced in the circuit portion constituted by the single-sided heat dissipation semiconductor element. This is because the thickness of two single-side heat dissipation semiconductor elements is reduced by the absence of a cooler between the “other surfaces” of the single-side heat dissipation semiconductor elements.

According to still another aspect of the present invention, a semiconductor device is formed by laminating a cooler through which a refrigerant is passed and a semiconductor element. The semiconductor element forms a circuit that generates a large amount of heat during operation. The double-sided heat-dissipating semiconductor element is arranged so that both sides are in contact with the cooler, and the circuit generates a small amount of heat during operation, and only one side is placed in contact with the cooler. and a plurality of single-sided heat radiation semiconductor elements are a plurality of one-side radiating semiconductor element, in which Cascade is sandwiched between the cooler and the cooler.

  The “single-side heat dissipation semiconductor element” in this semiconductor device is a semiconductor element arranged so that one surface is in contact with the cooler and the other surface is not in contact with the cooler. As a structure of the semiconductor element itself, both surfaces may be configured like a heat dissipation surface. Similar to the semiconductor device of [0010], this semiconductor device also achieves a simplified structure while ensuring the necessary cooling performance, compared to the case where the entire device is composed of double-sided heat dissipation semiconductor elements. Have special technical features.

Further semiconductor equipment of another embodiment of the present invention constitutes a cooler through the refrigerant therein, there is formed by laminating a semiconductor element, a semiconductor element, a circuit calorific value is large at the time of operation In addition, a double-sided heat-dissipating semiconductor element that is arranged so that both sides are in contact with the cooler and a circuit that generates a small amount of heat during operation are configured, and only one side is placed in contact with the cooler. and a plurality of single-sided heat radiation semiconductor elements are a plurality of single-sided heat dissipation semiconductor devices, in which one side of each of which is arranged so as to contact with each condenser between the other surface is in contact with each other There is . Thus, even if the semiconductor element is structurally configured to have a heat radiating surface, the semiconductor element is substantially used as a single-sided heat radiating semiconductor element. In addition, the number of coolers and inductance can be reduced.

[0017] As an inventive concept that further limits the semiconductor device of [0017], the following can be cited.
[Invention concept 1]
[0017] In the semiconductor device according to [0017],
A part of the plurality of single-sided heat dissipation semiconductor elements is used to interrupt conduction between the high-side line of the power source and the load-side terminal,
The remaining ones of the plurality of single-sided heat dissipation semiconductor elements are for continuity of conduction between the load-side terminal and the low-side line of the power source,
The one surface of the plurality of single-sided heat dissipation semiconductor elements is a connection surface with a high-side line of a power source and a connection surface with a low-side line of a power source,
Each of the other surfaces of the plurality of single-sided heat dissipation semiconductor elements is a connection surface with a load side terminal,
The semiconductor device, wherein the other surfaces of the plurality of single-sided heat dissipation semiconductor elements are in direct contact with each other.

Or the following can be considered.
[Invention concept 2]
[0017] In the semiconductor device according to [0017],
A part of the plurality of single-sided heat dissipation semiconductor elements is used to interrupt conduction between the high-side line of the power source and the load-side terminal,
The remaining ones of the plurality of single-sided heat dissipation semiconductor elements are for continuity of conduction between the load-side terminal and the low-side line of the power source,
Each of the one surface of the plurality of single-sided heat dissipation semiconductor elements is a connection surface with a load side terminal,
The other surface of the plurality of single-sided heat dissipation semiconductor elements is a connection surface with a high-side line of a power supply and a connection surface with a low-side line of a power supply,
2. The semiconductor device according to claim 1, wherein the other surfaces of the plurality of single-sided heat dissipation semiconductor elements are in contact with each other with an insulating member interposed therebetween.

  In the semiconductor device according to the present invention described in [0010] to [0019], the double-sided heat dissipation semiconductor element constitutes a power motor drive circuit that controls a supply current from a power source in a vehicle to a power generation responsible motor, It is desirable that the single-sided heat dissipation semiconductor element constitutes a generator motor drive circuit that controls the regeneration current from the motor in charge of regenerative power generation to the power source in the vehicle. In general, in electric vehicles such as two-motor hybrid vehicles and electric vehicles, the current of the motor in charge of regenerative power generation is about one third of the current supplied to the motor in charge of power generation, and the amount of heat generated by the drive circuit is commensurate with that There is a difference. Therefore, by applying the present invention, the structure can be simplified while ensuring the necessary cooling performance.

  In the semiconductor device described in [0015] or [0017], the double-sided heat dissipation semiconductor element forms a load driving circuit that controls a current between the power supply and the load, and the single-sided heat dissipation semiconductor element is connected to the power supply and the power supply. It is also desirable to configure a step-up / step-down circuit that raises and lowers the voltage with the load. In general, in a step-up / step-down circuit, only one of the upper and lower arms operates, so that the amount of heat generated is less than that of the load drive circuit.

[0021] Examples of the inventive concept further limiting the one described in [0021] include the following.
[Invention concept 3]
[0021] In the semiconductor device described in [0021],
A part of the plurality of single-sided heat dissipation semiconductor elements is for continuity of conduction between a high level line and a middle level line of the buck-boost circuit;
The remainder of the plurality of single-sided heat-dissipating semiconductor elements is for continuity of conduction between the middle line and the lower line of the step-up / down circuit;
The one surface of the plurality of single-sided heat dissipation semiconductor elements is a connection surface with the high level line and a connection surface with the low level line,
Each of the other surfaces of the plurality of one-side heat dissipation semiconductor elements is a connection surface with the middle line,
The semiconductor device, wherein the other surfaces of the plurality of single-sided heat dissipation semiconductor elements are in direct contact with each other.

[Invention concept 4]
[0021] In the semiconductor device described in [0021],
A part of the plurality of single-sided heat dissipation semiconductor elements is for continuity of conduction between a high level line and a middle level line of the buck-boost circuit;
The remainder of the plurality of single-sided heat-dissipating semiconductor elements is for continuity of conduction between the middle line and the lower line of the step-up / down circuit;
Each of the one surface of the plurality of single-sided heat dissipation semiconductor elements is a connection surface with the intermediate line,
The other surface of the plurality of single-sided heat dissipation semiconductor elements is a connection surface with the high level line and a connection surface with the low level line,
2. The semiconductor device according to claim 1, wherein the other surfaces of the plurality of single-sided heat dissipation semiconductor elements are in contact with each other with an insulating member interposed therebetween.

[Invention concept 5]
[0021] In the semiconductor device described in [0021],
Each of the plurality of single-sided heat dissipation semiconductor elements performs continuity between the high-level line and the middle-level line of the step-up / down circuit and continuity between the middle-level line and the low-level line. ,
Each of the one surface of the plurality of single-side heat dissipation semiconductor elements is a surface including a connection region with the high level line and a connection region with the low level line,
Each of the other surfaces of the plurality of one-side heat dissipation semiconductor elements is a connection surface with the middle line,
The semiconductor device, wherein the other surfaces of the plurality of single-sided heat dissipation semiconductor elements are in direct contact with each other.

[Invention concept 6]
[0021] In the semiconductor device described in [0021],
Each of the plurality of single-sided heat dissipation semiconductor elements performs continuity between the high-level line and the middle-level line of the step-up / down circuit and continuity between the middle-level line and the low-level line. ,
Each of the one surface of the plurality of single-sided heat dissipation semiconductor elements is a connection surface with the intermediate line,
Each of the other surfaces of the plurality of single-sided heat dissipation semiconductor elements is a surface including a connection region with the high level line and a connection region with the low level line,
The other surfaces of the plurality of single-sided heat dissipation semiconductor elements are in contact with each other so that a connection region with the high-level line and a connection region with the low-level line face each other with an insulating member interposed therebetween. A featured semiconductor device.

  According to the present invention, in a semiconductor device provided with a plurality of semiconductor elements having different calorific values together with a cooler, it is possible to achieve both an appropriate cooling performance according to the calorific value of each semiconductor element and a reduction in the number of processes and costs. ing.

1 is a circuit diagram of a hybrid system according to an embodiment. It is a perspective view which shows the laminated cooler which consists of the part of the motor drive circuit in FIG. 1, and a cooling tube. It is a disassembled perspective view which decomposes | disassembles and shows the lamination | stacking cooler of FIG. 2 to a component. It is a cross-sectional view which shows the structure of a cooling tube. It is a longitudinal cross-sectional view which shows the structure of a cooling tube. It is a longitudinal cross-sectional view of a 1 in 1 double-sided cooling power card. It is a cross-sectional view of a 1 in 1 double-sided cooling power card. It is an external appearance perspective view of a 1 in 1 double-sided cooling type power card. It is sectional drawing of the double-sided cooling type | mold power card which has an insulating sheet. It is sectional drawing of a 1 in 1 single-sided cooling type power card. It is sectional drawing which shows the structure of the laminated cooler of a 1st form. It is sectional drawing which shows the structure of the lamination | stacking cooler of the reference form corresponding to a 1st form. It is sectional drawing which shows the structure of the laminated cooler of a 2nd form. It is sectional drawing which shows the structure of the lamination | stacking cooler of a 3rd form. It is a graph which shows distribution of the load of the cooling tube in the laminated cooler of FIGS. It is a cross-sectional view of a U-shaped 2-in-1 double-sided cooling power card. It is a cross-sectional view of an N-shaped 2 in 1 double-sided cooling power card. It is a cross-sectional view of a 2-in-1 single-sided cooling power card. It is sectional drawing which shows the structure of the lamination | stacking cooler of a 4th form. It is sectional drawing which shows the structure of the laminated cooler of a 5th form. It is sectional drawing which shows the structure of the laminated cooler of a 6th form. It is a cross-sectional view of the 3-in-1 double-sided cooling power card for the upper arm. It is a cross-sectional view of a 3-in-1 double-sided cooling power card for the lower arm. It is a cross-sectional view of the 3-in-1 single-sided cooling power card for the upper arm. It is a cross-sectional view of a 3-in-1 single-sided cooling power card for the lower arm. It is sectional drawing which shows the structure of the laminated cooler of a 7th form. It is sectional drawing which shows the structure of the lamination | stacking cooler of the reference form corresponding to a 7th form. It is sectional drawing which shows the structure of the laminated cooler of the 8th form. It is sectional drawing which shows the structure of the laminated cooler of a 9th form. It is a graph which shows distribution of the load of the cooling tube in the lamination | stacking cooler of FIGS. It is sectional drawing which shows the structure of the laminated cooler of a 10th form. It is a graph which shows distribution of the load of the cooling tube in the lamination | stacking cooler of FIG. It is sectional drawing which shows the structure of the 11th form multilayer cooler. It is sectional drawing which shows the structure of the lamination | stacking cooler of a 12th form. It is a circuit diagram which describes the step-up / step-down circuit used for the hybrid system of FIG. FIG. 36 is a cross-sectional view of a parallel 2-in-1 double-sided cooling power card used in the step-up / down circuit of FIG. It is sectional drawing which shows the structure of the lamination | stacking cooler of a 13th form. FIG. 37 is a cross-sectional view of a modification of the parallel 2-in-1 double-sided cooling power card of FIG. It is sectional drawing which shows the structure of the modification (the 1) about the part of the buck-boost circuit of the laminated cooler of FIG. FIG. 36 is a circuit diagram showing another configuration example of the power card in the step-up / step-down circuit of FIG. 35. It is sectional drawing which shows the structure (the 1) of the part of the buck-boost circuit in the laminated cooler of 14th form. It is sectional drawing which shows the structure (the 2) of the part of the buck-boost circuit in the laminated cooler of a 14th form. It is sectional drawing which shows the structure (the 3) of the part of the buck-boost circuit in the laminated cooler of 14th form.

  DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments embodying the present invention will be described below in detail with reference to the accompanying drawings. The present embodiment embodies the present invention as a semiconductor device for controlling the motor of a two-motor hybrid vehicle. The semiconductor device of this embodiment is the one in which the present invention is applied to a hybrid system whose circuit diagram is shown in FIG. The hybrid system shown in FIG. 1 controls current exchange between the battery 1 and the first motor 2 and the second motor 3 in a two-motor hybrid vehicle.

  The hybrid system of FIG. 1 includes a first motor drive circuit 4 that drives the first motor 2 and a second motor drive circuit 5 that drives the second motor 3. In FIG. 1, a portion 6 of the first motor drive circuit 4 and the second motor drive circuit 5 is an inverter circuit according to the semiconductor device of this embodiment. The first motor drive circuit 4 has six transistors 41 to 46. Each transistor is a power semiconductor element such as an IGBT (Insulated Gate Bipolar Transistor). Of the transistors 41 to 46, three pairs of transistors 41 and 42, transistors 43 and 44, and transistors 45 and 46 are arranged in series between the high-side line 11 and the low-side line 12 of the battery 1, respectively. . The intermediate terminals 4U, 4V, 4W of each pair are connected to the terminals 2U, 2V, 2W of the first motor 2, respectively.

  Similarly to the first motor drive circuit 4, the second motor drive circuit 5 includes six transistors 51 to 56. Therefore, the intermediate terminal 5U, 5V, 5W of the second motor drive circuit 5 is also connected to the terminals 3U, 3V, 3W of the second motor 3, respectively. The transistors 41 to 46 and 51 to 56 of the first motor driving circuit 4 and the second motor driving circuit 5 each have a control electrode P. Of the transistors 41 to 46 and 51 to 56, six on the high side line 11 (odd number) may be referred to as an upper arm, and six on the low side line 12 (even number) may be referred to as a lower arm. Further, a protective diode D is provided for each transistor. In the two-motor hybrid vehicle, the first motor 2 is mainly in charge of power generation by energy regeneration, and the second motor 3 is mainly in charge of generation of driving force for driving the vehicle.

[Prerequisite configuration]
First, a premise configuration of a semiconductor device to which the present invention is applied will be described. The inverter circuit 6 in FIG. 1 is actually in the form of a stacked cooler 7 as shown in FIGS. The laminated cooler 7 in FIG. 2 is obtained by laminating the cooling tube 71, the power card 72, and the insulating plate 73 shown in FIG. Among these, the power card 72 is one in which a set of a total of 12 transistors in FIG. 1 is mounted in a card shape using a sealing resin together with its protective diode D. Therefore, the entire stacked cooler 7 in FIG. 2 includes 12 power cards 72. What is referred to as “semiconductor element” in the claims of the present invention is a “power card” in the embodiment. The detailed configuration of the power card will be described later.

  The cooling tube 71 is a hollow member for passing a refrigerant (for example, water but not limited to) inside. The cooling tube 71 has a substantially rectangular parallelepiped case portion 711 and two cylindrical connecting portions 712. As shown in the cross-sectional view of FIG. 4, a plurality of cooling tubes 71 can be connected to each other by a connecting portion 712 so that the coolant can circulate throughout. The arrow F of each part in FIG. 4 shows the direction of the refrigerant | coolant flow. However, only the rightmost tube in FIG. 2 among the cooling tubes 71 constituting the laminated cooler 7 is closed without the connecting portion 712 on the right surface in the drawing. Further, the left connecting portion 712 of the leftmost cooling tube 71 in FIG. 2 is made long enough to protrude through the housing 8. This is the entrance IN and the exit OUT.

  Further, as shown in a longitudinal sectional view of FIG. 5 (position C in FIG. 4), a wave-like fin 713 is inserted inside the case portion 711. This is to increase the heat radiation area from the material of the case portion 711 to the refrigerant. The case portion 711, the connecting portion 712, and the corrugated fins 713 are all press-formed products of light metal thin plates such as aluminum. These are joined by a method such as brazing to form a cooling tube 71. In the laminated cooler 7 of FIG. 2, the refrigerant can be circulated through the cooling tubes 71 constituting the laminated cooler 7 by the inlet IN and the outlet OUT.

  The insulating plate 73 is a plate that is sandwiched between the cooling tube 71 and the power card 72 for insulation. The insulating plate 73 is formed of an insulating and high thermal conductivity material (aluminum nitride or the like).

  The laminated cooler 7 in FIG. 2 is configured by arranging 12 power cards 72 in pairs between 7 cooling tubes 71. An insulating plate 73 is always sandwiched between the power card 72 and the cooling tube 71. The laminated cooler 7 is such that such a laminated body is integrally held by a housing 8 and a leaf spring 9 while being pressurized in the laminating direction. The leaf spring 9 is for improving the efficiency of heat radiation from the power card 72 to the cooling tube 71 by strongly pressing the power card 72 and the cooling tube 71 together. In the stacked cooler 7 of FIG. 2, twelve power cards 72 are arranged in six rows of two. Among them, six pieces in the left three rows in FIG. 2 belong to the first motor drive circuit 4, and six pieces in the right three rows belong to the second motor drive circuit 5.

  The power card 72 will be described. The power card 72 has a structure shown in the longitudinal sectional view of FIG. 6 and the transverse sectional view of FIG. 7 is a cross-sectional view at position A in FIG. 6, and FIG. 6 is a cross-sectional view at position B in FIG. As shown in FIGS. 6 and 7, the power card 72 has a structure in which the collector electrode plate 13 and the emitter electrode plate 14 sandwich the semiconductor portion 15 and the block electrode 16. The semiconductor portion 15 is actually a pair of a transistor and its protective diode, but is simply shown in the drawing (the same applies to the other cross-sectional views below). The block electrode 16 is located between the semiconductor portion 15 and the emitter electrode plate 14. The block electrode 16 is a member for securing a space for arranging the signal line 17 between the semiconductor portion 15 and the emitter electrode plate 14 so that the signal line 17 does not contact the emitter electrode plate 14.

  The power card 72 shown in FIG. 6 further includes a control terminal 18 for controlling the semiconductor portion 15. The control terminal 18 protrudes downward in FIG. 6 at the power card 72. The semiconductor portion 15 and the control terminal 18 are connected by a signal line 17. The signal line 17 is connected to the control electrode P of the transistor in the semiconductor portion 15. The power card 72 having such a configuration is integrated by the sealing resin 19. The power card 72 is further provided with an input bus bar 20 and an output bus bar 21 protruding upward in FIG. The input bus bar 20 is connected to the collector electrode plate 13, and the output bus bar 21 is connected to the emitter electrode plate 14.

  An appearance of the power card 72 is shown in FIG. As shown in FIG. 8, most of one surface of the power card 72 is occupied by the collector electrode plate 13. Although not visible in FIG. 8, most of the back surface is occupied by the emitter electrode plate 14. Thus, in the power card 72, both the collector electrode plate 13 and the emitter electrode plate 14 serve as a heat radiating plate as will be described later. In FIG. 8, there are a plurality of control terminals 18 because each transistor in the circuit diagram of FIG. 1 is actually a group of input / output terminals such as a current monitoring signal line and a temperature sensor signal line for measuring the heat generation state. This is because there is. Note that the pair of transistors in FIG. 1 may actually be configured as a parallel combination of a plurality of transistors.

  The power card 72 shown in FIGS. 6 to 8 is of a type called a double-sided cooling type among power cards. This is because the heat dissipation plates (collector electrode plate 13 and emitter electrode plate 14) are provided on both sides. In addition, there is a type called a single-sided cooling type, which will be described later. The power card 72 is also of a type called a 1 in 1 type among power cards. This is because one set of transistors and its protection diode D in the circuit diagram of FIG. 1 are mounted in one power card 72. There are other types called 2in1 type or 3in1 type, which will be described later.

  Some power cards are further provided with an insulating sheet on the cooling surface. An example is shown in FIG. The power card 72X of FIG. 9 is obtained by covering both surfaces of the power card 72 shown in FIG. 6 with the insulating sheet 22 and the metal foil 23. Some types are covered only with the insulating sheet 22. There is a type in which only one surface is covered with the insulating sheet 22 or with the insulating sheet 22 and the metal foil 23. Thus, the power card 72X having the insulating sheet 22 can be used in place of the power card 72 shown in FIG. In that case, the insulating plate 73 in FIGS. 2 and 3 is not necessary for the surface on which the insulating sheet 22 is provided. Of course, the insulating sheet 22 is formed of an insulating and high thermal conductive material, like the insulating plate 73.

  In the portions of the first motor drive circuit 4 and the second motor drive circuit 5 in FIG. 2, two power cards 72 (H, L) are sandwiched between the two cooling tubes 71 as shown in FIG. It is. The two power cards 72 (H, L) incorporate two transistors (for example, 41 and 42) and a protection diode D which are connected in series in the circuit diagram of FIG. That is, the power card 72H corresponds to an odd-numbered transistor among the 12 transistors in FIG. 1 and a protective diode (upper arm) paired therewith, and the power card 72L is an even-numbered transistor and a protective diode paired therewith. Corresponds to (lower arm).

The input bus bar 20 (H, L) and the output bus bar 21 (H, L) of the two power cards 72 (H, L) in FIG. 3 are connected as follows in a state where the connection to the wiring is completed. The
・ Input bus bar 20H → High side line 11
・ Output bus bar 21H and input bus bar 20L → corresponding intermediate terminal ・ Output bus bar 21L → low side line 12
Here, the intermediate terminal is any of the intermediate terminals 4U, 4V, 4W, 5U, 5V, and 5W in FIG. In this manner, the stacked cooler 7 of FIG. 2 functions as the inverter circuit 6 of the first motor drive circuit 4 and the second motor drive circuit 5 in FIG. 1 as a whole. The above is the description of the presupposed configuration.

[First embodiment]
The first form is entered from here. The overall configuration of the first embodiment is substantially the same as the above-described premise configuration. However, in the first embodiment, as the transistors 41 to 46 in the first motor drive circuit 4, a single-sided cooling type power card is used instead of the double-sided cooling type power card 72 described above. As the transistors 41 to 46 in the second motor drive circuit 5, the double-sided cooling type power card 72 is used as described in the presupposed configuration.

  Therefore, a single-sided cooling type power card will be described. The single-sided cooling type power card 82 is configured as shown in the sectional view of FIG. FIG. 10 is a longitudinal sectional view corresponding to FIG. 6 for explaining the double-sided cooling type power card 72. The single-sided cooling type power card 82 in FIG. 10 is common to the double-sided cooling type power card 72 in that one side is almost occupied by the collector electrode plate 13, but the opposite side is entirely made of the sealing resin 19. Occupied.

  The single-sided cooling type power card 82 does not have the emitter electrode plate 14. In the single-sided cooling power card 82, the inner end portion of the output bus bar 21 is directly connected to the semiconductor portion 15 and functions as an emitter electrode. For this reason, a plate-like emitter electrode is unnecessary. However, unlike the emitter electrode plate 14 of the double-sided cooling power card 72, this does not function as a heat sink. This is because it is embedded in the sealing resin 19. Only the collector electrode plate 13 functions as a heat sink in the single-sided cooling power card 82.

  Further, the single-sided cooling type power card 82 does not have the block electrode 16. Since there is no plate-like emitter electrode plate 14, there is no risk of contact between the signal line 17 and the emitter electrode plate 14. For this reason, the block electrode 16 is not necessary. In other respects, the configuration of the single-sided cooling power card 82 is substantially the same as that of the double-sided cooling power card 72. That is, the single-sided cooling power card 82 in FIG. 10 is classified as a 1 in 1 type.

  In terms of appearance, the single-sided cooling type power card 82 and the double-sided cooling type power card 72 are not significantly different from each other when viewed at an angle as shown in FIG. In particular, in addition to the fact that one surface is almost occupied by the collector electrode plate 13, it is common that the input bus bar 20 and the output bus bar 21 protrude upward, and that the control terminal 18 protrudes downward. To do. However, when the back surface is seen, unlike the double-sided cooling type power card 72, the single-sided cooling type power card 82 seems to be mostly made of the sealing resin 19. Therefore, when the single-sided cooling type power card 82 is incorporated in the laminated cooler 7 as shown in FIG. 3, the insulating plate 73 is not necessary on the surface side of the sealing resin 19. Further, with respect to the single-sided cooling type power card, with respect to the surface of the collector electrode plate 13, the variation with the insulating sheet described in [0040] is possible.

  FIG. 11 shows a cross-sectional view of the entire stacked cooler 701 according to the first embodiment. As shown in FIG. 11, the laminated cooler 701 is a laminated body in which six single-sided cooling power cards 82 and six double-sided cooling power cards 72 are sandwiched between seven cooling tubes 71. In the stacked cooler 701 of FIG. 11, two six-sided cooling type power cards 82 are arranged in three rows on the left side in the drawing. These constitute the first motor drive circuit 4. In addition, six double-sided cooling type power cards 72 are arranged two by two in the right three rows in the figure. These constitute the second motor drive circuit 5.

  As shown in FIG. 11, in the laminated cooler 701, the double-sided cooling power card 72 is provided with insulating plates 73 on both sides, whereas the single-sided cooling type power card 82 has its collector. The insulating plate 73 is disposed only on the surface on the electrode plate 13 side. Accordingly, the total number of insulating plates 73 included in the stacked cooler 701 in FIG. 11 is 18 sheets.

  That is, in the laminated cooler 701, six double-sided cooling power cards 72 are used in the second motor drive circuit 5, and the heat radiation surfaces on both sides of each double-sided cooling power card 72 are both insulating plates 73. Is in close contact with the cooling tube 71. On the other hand, in the first motor drive circuit 4, six single-sided cooling type power cards 82 are used, and the heat-radiating surfaces of those one side are in close contact with the cooling tube 71 through the insulating plate 73. Although the other surface of the single-sided cooling power card 82 is also in close contact with the cooling tube 71, this does not contribute much to the heat dissipation. Therefore, when the heat dissipation of the first motor drive circuit 4 and the second motor drive circuit 5 is compared, the second motor drive circuit 5 is superior.

  In the stacked cooler 701 configured as described above, as described above, the second motor 3 driven by the second motor drive circuit 5 is mainly responsible for the generation of power of the vehicle, whereas the first motor. The first motor 2 driven by the drive circuit 4 is mainly responsible for power generation. For this reason, the current flowing through the first motor drive circuit 4 is at most about one third of the current flowing through the second motor drive circuit. Accordingly, there is a difference in the amount of heat generated accordingly, and the second motor drive circuit generates more heat than the first motor drive circuit 4. That is, the difference in heat dissipation between the first motor drive circuit 4 and the second motor drive circuit 5 is matched to the difference in heat generation. For this reason, in the actual driving state of the vehicle, the first motor drive circuit 4 does not overheat just because the cooling capacity of the first motor drive circuit 4 is low.

  If the first motor drive circuit 4 is also constituted by the double-sided cooling power card 72, the total number of insulating plates 73 is 24 as shown in FIG. This is six more than in the case of FIG. The double-sided cooling power card 72 itself is naturally more complicated in structure than the single-sided cooling type power card 82. As described above, in the configuration example of FIG. 12, the number of parts is large and the structure is complex, but the cooling performance is rather excessive and has no merit. On the other hand, in the laminated cooler 701 of the first embodiment shown in FIG. 11, a simple structure single-sided cooling type power card 82 is employed in the portion of the first motor drive circuit 4 that generates little heat. This reduces the number of parts and simplifies the structure while ensuring the minimum required cooling performance. The above is the description of the first embodiment.

[Second form]
Next, the second embodiment will be described. FIG. 13 shows a cross-sectional view of the entire laminated cooler 702 according to the second embodiment. The stacked cooler 702 of FIG. 13 differs from the above-described stacked cooler 701 (FIG. 11) of the first embodiment in the following two points, and the other points are common.
(A) In the first motor drive circuit 4, the single-sided cooling type power card 82 is opposite to that shown in FIG.
(B) The number of cooling tubes 71 is one less.

  That is, in the stacked cooler 701 of FIG. 11, there are only two cooling tubes 71 that receive heat radiation from both sides, on both sides of the V phase of the second motor drive circuit 5. In addition to this, in the stacked cooler 702 of FIG. 13, the cooling tube 71 between the U phase of the second motor drive circuit 5 and the W phase of the first motor drive circuit 4 also receives heat from both sides. . This is achieved by reversing the direction of the single-sided cooling power card 82 from side to side. That is, in the stacked cooler 701 of FIG. 11, the single-sided cooling type power card 82 is arranged so that the non-heat dissipating surface (sealing resin surface) faces the region of the second motor drive circuit 5. On the other hand, in the laminated cooler 702 of FIG. 13, the single-sided cooling type power card 82 is arranged so that the heat radiation surface (the surface on the collector electrode plate 13 side) is directed toward the region of the second motor drive circuit 5. It is.

  Accordingly, the cooling tube 71 between the U phase of the first motor drive circuit 4 and the housing 8 is unnecessary. This is because the U-phase two single-sided cooling power cards 82 of the first motor drive circuit 4 have the non-heat dissipating surface (sealing resin surface) facing the housing 8. Therefore, in the laminated cooler 702 of FIG. 13, the single-sided cooling type power card 82 located at the end of the single-sided cooling type power card 82 and the double-sided cooling type power card 72 has its non-heat dissipating surface (sealing resin surface). , Not the cooling tube 71 but the housing 8. This is the U-phase two single-sided cooling power card 82 of the first motor drive circuit 4. As described above, the second embodiment has an advantage that the number of the cooling tubes 71 can be reduced by one as compared with the first embodiment. The single-sided cooling type power card 82 other than the U phase has a non-heat dissipating surface in close contact with the cooling tube 71.

  In order to obtain this advantage, not all the single-sided cooling type power cards 82 of the first motor drive circuit 4 have to be arranged in the above-mentioned direction. Even if only the row closest to the housing 8, in other words, the row farthest from the area of the second motor drive circuit 5 (the U-phase in FIG. 13) has the above orientation, Good. That is, the orientation of the other side of the single-sided cooling type power card 82 (V-phase and W-phase in FIG. 13) may be either direction. However, it is better that the single-sided cooling type power card 82 other than the U phase is oriented in the same direction as that of the U phase. This is to make the burden on the cooling tube 71 uniform in the region of the first motor drive circuit 4. The above is the description of the second embodiment.

[Third embodiment]
Next, a third embodiment will be described. FIG. 14 shows a cross-sectional view of the entire laminated cooler 703 according to the third embodiment. The stacked cooler 703 of FIG. 14 differs from the above-described stacked cooler 702 (FIG. 13) of the second embodiment in the following points, and the other points are common.
(C) Rows of single-sided cooling power cards 82 belonging to the first motor driving circuit 4 and rows of double-sided cooling power cards 72 belonging to the second motor driving circuit 5 are alternately arranged.

  That is, in the stacked cooler 701 in FIG. 11 or the stacked cooler 702 in FIG. 13, the row of the single-sided cooling type power card 82 and the row of the double-sided cooling type power card 72 are arranged in a concentrated manner. As a result, regarding the arrangement of the cooling tubes 71, those that receive heat radiation from both sides (two in FIG. 11 and three in FIG. 13) are arranged in a concentrated manner.

  Therefore, by alternately arranging the arrangement of the two types of power cards, the cooling tube 71 is also arranged in such a manner that the one that receives heat from both sides and the one that receives heat from only one side are arranged alternately. It is the laminated cooler 703 of the form. Thereby, the heat generation distribution as a whole of the stacked cooler 703 is leveled. For this reason, the load distribution between the cooling tubes 71 is also leveled compared to that in FIG. 13, and there is room for cooling performance.

In order to obtain the advantage of the third embodiment, it is necessary to satisfy the following conditions in addition to the two rows of power cards being alternately arranged.
A power card in a row sandwiched between the cooling tube 71 and the housing 8, in other words, a row in which only one side faces the cooling tube 71 (the U phase of “4” in FIG. 14) is a single-side cooling type power card 82. There must be.
The single-sided cooling power card 82 in the row must have its heat radiation surface (the surface of the collector electrode plate 13) directed toward the cooling tube 71, not the housing 8.

  Regarding the second of these conditions, in other words, even in the case of the single-side cooling type power card 82, the one sandwiched between the cooling tubes 71 ("4" V phase and W phase in FIG. 14). For, the direction can be either direction. However, preferably, these single-sided cooling type power cards 82 should also be oriented in the same direction as the single-sided cooling type power card 82 that faces the cooling tube 71 only on one side. This is because the cooling performance as a whole of the stacked cooler 703 is further leveled. The above is the description of the third embodiment.

  Here, the load distribution state of the cooling tube 71 was measured for the first to third embodiments described above and the premise thereof, and the result will be described with reference to the graph of FIG. The graph of FIG. 15 shows the stacked coolers of FIG. 12 (reference form as a premise), FIG. 11 (first form), FIG. 13 (second form), and FIG. 14 (third form) from the top. FIG. 6 is a bar graph showing a comparison of the temperature rise width of the refrigerant in each cooling tube 71 among them.

  This measurement is performed at the inlet and outlet of each cooling tube 71 (not “IN” or “OUT” in FIG. 11 or the like, but the connection portions 712 at the lower and upper ends in the drawing of each cooling tube 71 (see FIG. 3 or the like)). This was performed in a state where a temperature sensor was provided at the mounting location. In this state, the circuit was operated, and the temperature rise in each cooling tube 71 was measured. Water was used as the refrigerant. At that time, the flow rate of the cooling water was adjusted so that the maximum temperature rise in each cooling tube 71 did not exceed the upper limit (70 ° C.).

  The numbers 1 to 7 on the horizontal axis in the graph of FIG. 15 are numbers for identifying individual cooling tubes 71 in each stacked cooler. The leftmost cooling tube 71 (in contact with the housing 8) in the stacked cooler of FIG. 12 is numbered 1, and is numbered in order toward the right, and the rightmost cooling tube 71 (in contact with the leaf spring 9). No. 7). The same numbering was applied to the stacked cooler of FIG. The laminated coolers of FIGS. 13 and 14 are also numbered similarly except that number 1 is a missing number.

Looking at the uppermost part of the graph of FIG. 15 (reference form of FIG. 12), the temperature rise generally increases in the following order.
No. 5 and No. 6: Cooling tubes 71 arranged to be sandwiched from both sides by a double-sided cooling power card 72 belonging to the second motor drive circuit 5 (in charge of driving). Therefore, a considerable amount of exhaust heat is received from both sides, so the temperature rise is large.
# 4: Double-sided cooling power that receives heat from the double-sided cooling power card 72 belonging to the second motor drive circuit 5 on one side, and belongs to the first motor drive circuit 4 (in charge of power generation) on the other side The cooling tube 71 receives heat radiation from the card 72.
No. 7: a cooling tube 71 that receives heat from the double-sided cooling type power card 72 belonging to the second motor drive circuit 5 on one side, but does not receive heat on the other side.
First to third: The cooling tubes 71 receive heat radiation only from the double-sided cooling type power card 72 belonging to the first motor drive circuit 4.

  In the reference form of FIG. 12, the cooling capacity itself is ensured equally as a whole of the stacked cooler as described above. In contrast to this, the result of FIG. 15 shows that the cooling capacity is excessive in the portion (the first to third cooling tubes 71) for cooling the double-sided cooling power card 72 belonging to the first motor drive circuit 4 (in charge of power generation). It shows that.

  Also in the second stage from the top in the graph of FIG. 15 (stacked cooler 701 of the first embodiment of FIG. 11), the temperature rise of each cooling tube 71 is generally the same as in the reference embodiment of FIG. In FIG. 11, as described above, the portion belonging to the first motor drive circuit 4 is configured by the single-side cooling power card 82, thereby eliminating the excessive cooling capacity.

  The third stage from the top in the graph of FIG. 15 (stacked cooler 702 of the second form in FIG. 13) also shows a tendency similar to the top and second stages except that No. 1 does not exist. ing.

  In the lowermost stage in the graph of FIG. 15 (stacked cooler 703 of the third embodiment in FIG. 14), the temperature rises almost uniformly from No. 2 to No. 7. The cooling tube 71 (even number in FIG. 15) that receives heat from both sides and the cooling tube 71 (odd number in FIG. 15) that receives heat from only one side are arranged alternately. This is because the burden of the above is leveled in the entire laminated cooler 703. The above is the description of FIG.

[Fourth to sixth forms]
What has the function equivalent to the laminated cooler demonstrated as the 1st-3rd form can be comprised using a 2 in 1 type power card instead of a 1 in 1 type power card. This is the fourth to sixth forms. In the circuit diagram of FIG. 1, the 2-in-1 type power card is composed of two pairs of transistors (for example, 41 and 42) in combination with one row of upper and lower arms and a protective diode D paired with them as one power card. Implemented. First, a 2-in-1 type power card will be described. The 2-in-1 type power card also has a double-sided cooling type and a single-sided cooling type. The double-sided cooling type is further divided into what is called a U-shape and what is called an N-shape. This will be described in order below.

  FIG. 16 is a cross-sectional view (cross-sectional view corresponding to FIG. 7) of the U-shaped 2 in 1 double-sided cooling power card 74. A U-shaped 2-in-1 double-sided cooling power card 74 in FIG. 16 includes a high side electrode plate 24, a middle side electrode plate 25, and a low side electrode plate 26. In the U-shaped 2-in-1 double-sided cooling type power card 74, most of one surface is occupied by the high-side electrode plate 24 and the low-side electrode plate 26, and most of the other surface is occupied by the middle-side electrode plate 25. It has been. All of these three electrode plates have a function as a heat sink. In other words, both sides are heat dissipation surfaces. The high side electrode plate 24 is a collector electrode of an odd-numbered transistor. The middle side electrode plate 25 is formed by integrating the emitter electrode of the odd-numbered transistor and the collector electrode of the even-numbered transistor. The low side electrode plate 26 is an emitter electrode of an even-numbered transistor.

  The semiconductor portion 15 and the block electrode 16 are sandwiched between the high side electrode plate 24 and the middle side electrode plate 25 and between the middle side electrode plate 25 and the low side electrode plate 26, respectively. The semiconductor portion 15 on the high-side electrode plate 24 side is an odd-numbered transistor or the like in FIG. 1, and the semiconductor portion 15 on the low-side electrode plate 26 side is an odd-numbered transistor or the like. The reason for the presence of the block electrode 16 is the same as in the case of the 1 in 1 type double-sided cooling power card 72. In the U-shaped 2-in-1 double-sided cooling type power card 74, when FIG. 16 is laid down to the right, the current path from the high-side electrode plate 24 through the middle-side electrode plate 25 to the low-side electrode plate 26 is generally alphabetical. A “U” shape is shown. This is the reason why it is called U-shaped.

  In the U-shaped 2-in-1 double-sided cooling type power card 74, the high side electrode plate 24, the middle side electrode plate 25, and the low side electrode plate 26 are respectively provided with “20” and “21” in FIG. 6 and FIG. Such a bus bar is provided. The high side electrode plate 24 is connected to the high side line 11, the middle side electrode plate 25 is connected to the corresponding intermediate terminal (see [0042]), and the low side electrode plate 26 is connected to the low side line 12. Further, control terminals as indicated by “18” in FIGS. 6 and 8 are provided on the semiconductor portion 15 on the high side electrode plate 24 side and the semiconductor portion 15 on the low side electrode plate 26 side, respectively.

  FIG. 17 shows a cross-sectional view of an N-shaped 2-in-1 double-sided cooling power card 75. The N-shaped 2-in-1 double-sided cooling power card 75 in FIG. 17 includes a high side electrode plate 24, a middle side electrode plate 27, and a low side electrode plate 26. Unlike the flat middle-side electrode plate 25 in FIG. 16, the middle-side electrode plate 27 has a step shape of an emitter portion 28 and a collector portion 29. In the N-shaped 2-in-1 double-sided cooling power card 75, most of one surface is occupied by the high-side electrode plate 24 and the collector portion 29 of the middle-side electrode plate 27. And most of the other surface is occupied by the emitter portion 28 of the middle side electrode plate 27 and the low side electrode plate 26.

  That is, in the N-shaped 2-in-1 double-sided cooling type power card 75, the high-side electrode plate 24 and the low-side electrode plate 26 are arranged on separate surfaces, and the middle-side electrode plate 27 is arranged diagonally in FIG. Yes. Of course, in the N-shaped 2-in-1 double-sided cooling type power card 75, all of the three electrode plates have a function as a heat radiating plate, and both surfaces are heat radiating surfaces.

  In the N-shaped 2-in-1 double-sided cooling power card 75, the high-side electrode plate 24 is the collector electrode of the odd-numbered transistor, and the low-side electrode plate 26 is the emitter electrode of the even-numbered transistor. It is the same as the case of the letter shape. In the N-shaped 2-in-1 double-sided cooling power card 75, the emitter portion 28 of the middle side electrode plate 27 is the emitter electrode of the odd-numbered transistor, and the collector portion 29 is the collector electrode of the even-numbered transistor. The semiconductor portion 15 and the block electrode 16 are sandwiched between the high side electrode plate 24 and the emitter portion 28 of the middle side electrode plate 27 and between the collector portion 29 of the middle side electrode plate 27 and the low side electrode plate 26, respectively. It is.

  In the N-shaped 2-in-1 double-sided cooling type power card 75, when FIG. 17 is laid down, the current path from the high-side electrode plate 24 through the middle-side electrode plate 27 to the low-side electrode plate 26 is generally “N” "Indicates a letter shape. This is the reason why it is called N-shaped. Also in the N-shaped 2-in-1 double-sided cooling power card 75, bus bars are provided on the three electrode plates of the high-side electrode plate 24, the middle-side electrode plate 27, and the low-side electrode plate 26, respectively. Of course, the high side electrode plate 24 is connected to the high side line 11, the middle side electrode plate 27 is connected to the corresponding intermediate terminal, and the low side electrode plate 26 is connected to the low side line 12. The two semiconductor portions 15 are each provided with a control terminal.

  FIG. 18 shows a cross-sectional view of the 2-in-1 single-sided cooling power card 76. 18 includes a high-side electrode plate 24, a middle-side electrode member 30, a middle-side electrode plate 31, and a low-side electrode member 32. Unlike the middle side electrode plate 25 in FIG. 16 and the middle side electrode plate 27 in FIG. 17, the middle side electrode plate 31 has substantially the same size and shape as the high side electrode plate 24. On the other hand, the middle side electrode member 30 and the low side electrode member 32 are basically embedded in the sealing resin 19.

  In the 2-in-1 single-sided cooling power card 76, most of one surface is occupied by the high-side electrode plate 24 and the middle-side electrode plate 31. The other surface is all occupied by the sealing resin 19. In the 2-in-1 single-sided cooling power card 76, only the high-side electrode plate 24 and the middle-side electrode plate 31 have a function as a heat radiating plate, and only this surface is a heat radiating surface. The 2-in-1 single-sided cooling power card 76 is basically a modification of the N-shaped 2-in-1 double-sided cooling power card 75 of FIG. 17 into a single-sided type.

  In the 2-in-1 single-sided cooling type power card 76, the high-side electrode plate 24 is the collector electrode of an odd-numbered transistor in common with the double-sided cooling type in FIGS. In the 2-in-1 single-sided cooling power card 76, the middle side electrode member 30 is the emitter electrode of the odd numbered transistor, the middle side electrode plate 31 is the collector electrode of the even numbered transistor, and the low side electrode member 32 is the even numbered transistor. This is the emitter electrode of the transistor. The middle side electrode member 30 and the middle side electrode plate 31 are connected.

  The semiconductor portions 15 are sandwiched between the high-side electrode plate 24 and the middle-side electrode member 30 and between the middle-side electrode plate 31 and the low-side electrode member 32, respectively. As in the case of the 1 in 1 single-sided cooling type power card 82 (FIG. 10), the block electrode 16 is not provided. In the 2-in-1 single-sided cooling power card 76, bus bars are provided on the three electrode members of the high-side electrode plate 24, the middle-side electrode plate 31, and the low-side electrode member 32, respectively. Of course, the high side electrode plate 24 is connected to the high side line 11, the middle side electrode plate 31 is connected to the corresponding intermediate terminal, and the low side electrode member 32 is connected to the low side line 12. The two semiconductor portions 15 are each provided with a control terminal.

  Of course, the variations described in [0040] are also possible with the 2-in-1 type power cards 74 to 76.

In the fourth embodiment, the 2in1 type power card is applied to the first embodiment. An example is shown in FIG. The stacked cooler 704 in FIG. 19 is obtained by making the following changes based on the stacked cooler 701 in FIG.
(1) The upper and lower arms of two 1 in 1 single-sided cooling power cards 82 in three rows in the first motor drive circuit 4 are replaced with one 2 in 1 single-sided cooling power card 76 (see FIG. 18).
(2) The upper and lower arms of two 1 in 1 double-sided cooling type power cards 72 in three rows in the second motor drive circuit 5 are respectively placed on one U-shaped 2 in 1 double-sided cooling type power card 74 (see FIG. 16). Change.

In the fifth embodiment, a 2-in-1 type power card is applied to the second embodiment described above. An example is shown in FIG. A stacked cooler 705 in FIG. 20 is the same as the above (1) and the following change based on the stacked cooler 702 in FIG.
(3) The upper and lower arms of two 1 in 1 double-sided cooling type power cards 72 in three rows in the second motor drive circuit 5 are respectively placed with one N-shaped 2 in 1 double-sided cooling type power card 75 (see FIG. 17). Change.

  In the sixth embodiment, a 2 in 1 type power card is applied to the third embodiment described above. An example is shown in FIG. The stacked cooler 706 in FIG. 21 is the same as the above (1) and (2), based on the stacked cooler 703 in FIG.

  The stacked cooler 704 in FIG. 19, the stacked cooler 705 in FIG. 20, and the stacked cooler 706 in FIG. 21 are respectively the stacked cooler 701 in FIG. 11, the stacked cooler 702 in FIG. 13, and the stacked cooler 703 in FIG. Has the same functions and benefits. The stacked coolers 704 to 706 can be further modified as follows.

The above replacement may be performed for only one of the first motor drive circuit 4 and the second motor drive circuit 5 (stacked coolers 704 to 706).
In the second motor drive circuit 5, an N-shaped 2 in 1 double-sided cooling power card 75 may be used instead of the U-shaped 2 in 1 double-sided cooling power card 74 (stacked coolers 704 and 706).
In the second motor drive circuit 5, a U-shaped 2 in 1 double-sided cooling power card 74 may be used instead of the N-shaped 2 in 1 double-sided cooling power card 75 (stacked cooler 705).
The above replacement may be performed on only a part of the upper and lower arms of the three rows of the first motor drive circuit 4 (stacked coolers 704 to 706).
The above replacement may be performed on only a part of the upper and lower arms of the three rows of the second motor drive circuit 5 (stacked coolers 704 to 706).
In the second motor drive circuit 5, the U-shaped 2in1 double-sided cooling power card 74 and the N-shaped 2in1 double-sided cooling power card 75 may be mixed (stacked coolers 704 to 706).
The above is the description of the fourth to sixth embodiments.

[Seventh to ninth forms]
What has the function equivalent to the laminated cooler demonstrated as the 1st-6th form can be comprised using a 3in1 type power card instead of a 1in1 type or a 2in1 type power card. This is the seventh to ninth forms. The 3-in-1 type power card is obtained by mounting three sets of transistors in the circuit diagram of FIG. 1 and protective diodes corresponding to each of them as a single power card. The three sets of transistors are three sets of upper arms or three sets of lower arms in the first motor drive circuit 4 or the second motor drive circuit 5. Specifically, the numbers in FIG. 1 are any of 41 and 43 and 45, 42 and 44 and 46, 51 and 53 and 55, and 52 and 54 and 56. The 3-in-1 type power card also has a double-sided cooling type and a single-sided cooling type. This will be described in order below.

  First, the double-sided cooling type will be described. There are no types of U-shaped and N-shaped 3-in-1 double-sided cooling power cards, as in the 2-in-1 type, but there are two types for the upper arm and the lower arm. FIG. 22 shows a cross-sectional view (a cross-sectional view corresponding to FIG. 7) of the 3-in-1 double-sided cooling power card 77 for the upper arm. 22 has a common high-side electrode plate 33 and three middle-side electrode plates 34.

  In the upper arm 3-in-1 double-sided cooling power card 77, most of one surface is occupied by the common high-side electrode plate 33, and most of the other surface is occupied by the three middle-side electrode plates. ing. Any of these four electrode plates has a function as a heat sink. In other words, both sides are heat dissipation surfaces. The common high-side electrode plate 33 is a collector electrode of the odd-numbered three transistors in FIG. Each middle side electrode plate 34 is an emitter electrode of three odd-numbered transistors.

  The semiconductor portion 15 and the block electrode 16 are sandwiched between the common high side electrode plate 33 and the three middle side electrode plates 34, respectively. These three semiconductor portions 15 are odd-numbered transistors or the like. The reason for the presence of the block electrode 16 is the same as in the case of a 1 in 1 type or 2 in 1 type double-sided cooling power card. In the upper arm 3-in-1 double-sided cooling power card 77, the common high-side electrode plate 33 and the three middle-side electrode plates 34 are each provided with a total of four bus bars. The common high-side electrode plate 33 is connected to the high-side line 11, and the three middle-side electrode plates 34 are each connected to an intermediate terminal (see [0042]). In addition, a control terminal 18 is provided in each of the three semiconductor portions 15.

  FIG. 23 is a cross-sectional view of the lower arm 3-in-1 double-sided cooling power card 78. The lower arm 3-in-1 double-sided cooling power card 78 in FIG. 23 has three middle-side electrode plates 35 and a common low-side electrode plate 36. In the lower arm 3 in 1 double-sided cooling type power card 78, most of one surface is occupied by three middle side electrode plates 35, and most of the other surface is occupied by a common low side electrode plate 36. Yes. Any of these four electrode plates has a function as a heat sink. In other words, both sides are heat dissipation surfaces. Each middle side electrode plate 35 is each collector electrode of three even-numbered transistors. The common low-side electrode plate 36 is an emitter electrode of even-numbered three transistors.

  The semiconductor portion 15 and the block electrode 16 are sandwiched between the three middle-side electrode plates 35 and the common low-side electrode plate 36, respectively. These three semiconductor portions 15 are even-numbered transistors or the like. The reason for the presence of the block electrode 16 is the same as in the case of the double-sided cooling type power card that has appeared so far. In the lower arm 3-in-1 double-sided cooling power card 78, the three middle side electrode plates 35 and the common low side electrode plate 36 are each provided with four bus bars. The three middle side electrode plates 35 are connected to corresponding ones of the corresponding intermediate terminals and the middle side electrode plates 34 of the 3-in-1 double-sided cooling power card 77 for the upper arm. The common low side electrode plate 36 is connected to the low side line 12. In addition, a control terminal 18 is provided in each of the three semiconductor portions 15.

  Next, the single side cooling type will be described. There are two types of 3-in-1 single-sided cooling power cards, one for the upper arm and one for the lower arm. FIG. 24 shows a cross-sectional view of the 3-in-1 single-sided cooling power card 79 for the upper arm. The upper arm 3-in-1 single-sided cooling power card 79 shown in FIG. 24 has a common high-side electrode plate 33 and three middle-side electrode members 37. Unlike the middle side electrode plate 34 in FIG. 22, the middle side electrode member 37 is basically embedded in the sealing resin 19.

  In the upper arm 3 in 1 single-sided cooling power card 79, most of one side is occupied by the common high-side electrode plate 33. The other surface is all occupied by the sealing resin 19. In the 3-in-1 single-sided cooling power card 79 for the upper arm, only the common high-side electrode plate 33 has a function as a heat radiating plate, and only this surface is a heat radiating surface. The upper arm 3-in-1 single-sided cooling power card 79 is basically a modification of the upper-arm 3-in-1 double-sided cooling power card 77 shown in FIG.

  In the 3-in-1 single-sided cooling power card 79 for the upper arm, the common high-side electrode plate 33 is the collector electrode of the odd-numbered three transistors in common with the double-sided cooling type in FIG. The three middle side electrode members 37 are the emitter electrodes of the odd-numbered three transistors. The semiconductor portions 15 are sandwiched between the common high-side electrode plate 33 and the three middle-side electrode members 37, respectively. As in the case of a 1 in 1 type or 2 in 1 type single-sided cooling power card, there is no block electrode 16. In the 3-in-1 single-sided cooling power card 79 for the upper arm, each of the common high-side electrode plate 33 and the three middle-side electrode members 37 is provided with a total of four bus bars. The common high-side electrode plate 33 is connected to the high-side line 11 and the three middle-side electrode members 37 are connected to the intermediate terminals. In addition, a control terminal 18 is provided in each of the three semiconductor portions 15.

  FIG. 25 shows a cross-sectional view of the lower arm 3-in-1 single-sided cooling power card 80. The lower arm 3 in 1 single-sided cooling power card 80 in FIG. 25 has three middle side electrode plates 35 and a common low side electrode member 38. Unlike the common low-side electrode plate 36 in FIG. 23, the common low-side electrode member 38 is basically embedded in the sealing resin 19.

  In the lower arm 3 in 1 single-sided cooling type power card 80, most of one side is occupied by three middle side electrode plates 35. The other surface is all occupied by the sealing resin 19. In the 3 in 1 single-sided cooling power card 80 for the lower arm, only the three middle side electrode plates 35 have a function as a heat radiating plate, and only this surface is a heat radiating surface. The lower arm 3-in-1 single-sided cooling power card 80 is basically a modification of the lower-arm 3-in-1 double-sided cooling power card 78 shown in FIG.

  In the lower arm 3-in-1 single-sided cooling power card 80, the three middle-side electrode plates 35 are the collector electrodes of the even-numbered three transistors in common with the double-sided cooling type in FIG. The common low-side electrode member 38 is the emitter electrode of each of the even-numbered three transistors. The semiconductor portions 15 are sandwiched between the three middle side electrode plates 35 and the common low side electrode member 38, respectively. As in the case of the 3-in-1 single-sided cooling power card 79 for the upper arm, there is no block electrode 16.

  In the lower arm 3-in-1 single-sided cooling power card 80, the three middle-side electrode plates 35 and the common low-side electrode member 38 are each provided with a total of four bus bars. The three middle side electrode plates 35 are respectively connected to corresponding intermediate terminals. That is, each of the three middle side electrode members 37 of the upper arm 3 in 1 single-sided cooling power card 79 is also connected. The common low side electrode member 38 is connected to the low side line 12. In addition, a control terminal 18 is provided in each of the three semiconductor portions 15.

  Of course, the variations described in [0040] are also possible for the 3-in-1 power cards 77-80.

  In the seventh embodiment, the above-described four types of 3 in 1 type power cards are applied to the first embodiment described above. An example is shown in FIG. The laminated cooler 707 of FIG. 26 is configured by arranging 3 in 1 type power cards 77 to 80 between five cooling tubes 81. Here, the upper arm 3-in-1 double-sided cooling power card 77 and the upper-arm 3-in-1 single-sided cooling power card 79 are both in charge of the operation of the conduction state between the high-side line 11 and the load side terminal. Yes. The lower arm 3-in-1 double-sided cooling power card 78 and the lower-arm 3-in-1 single-sided cooling power card 80 are both in charge of the operation of the conduction state between the load-side terminal and the low-side wire 12.

  By using a 3-in-1 power card, the number of cooling tubes 81 is reduced by two compared to the stacked cooler 701 (FIG. 11) of the first embodiment. However, the cooling tube 81 in FIG. 26 is slightly longer in the vertical direction in FIG. 26 than the cooling tube 71 used in FIG. In other respects, the stacked cooler 707 is basically configured in the same manner as the stacked cooler 701.

  That is, in the laminated cooler 707, the upper arm 3-in-1 single-sided cooling power card 79 and the lower-arm 3-in-1 single-sided cooling power card 80 are arranged between the three cooling tubes 81 near the housing 8 on the left in the drawing. ing. These constitute the first motor drive circuit 4. Also, an upper arm 3 in 1 double-sided cooling power card 77 and a lower arm 3 in 1 double-sided cooling power card 78 are arranged between the three cooling tubes 81 near the leaf spring 9 on the right side in the drawing. These constitute the second motor drive circuit 5. Even in such a configuration, the portion of the first motor driving circuit 4 having a low cooling load is configured by a single-side cooling type power card. Therefore, generation of extra costs is prevented.

  FIG. 27 is a cross-sectional view of a laminated cooler of a reference form corresponding to the laminated cooler 707 of FIG. In the stacked cooler of FIG. 27, the first motor drive circuit 4 is also composed of a double-sided cooling type 3 in 1 type power card, not a single-sided cooling type. That is, it can be said that the reference form shown in FIG. 12 is configured by a 3 in 1 type power card. Of course, in the configuration of FIG. 27, the two 3-in-1 double-sided cooling power cards 77 for the upper arm are all in charge of the operation of the conduction state between the high-side line 11 and the load-side terminal. Each of the two 3-in-1 double-sided cooling power cards 78 for the lower arm is in charge of the operation of the conduction state between the load-side terminal and the low-side wire 12.

  In the eighth embodiment, a 3 in 1 type power card is applied to the second embodiment (FIG. 13). In other words, it can be said that the number of the cooling tubes 81 is reduced by one by reversing the direction of the single-sided cooling type power card in the seventh embodiment. FIG. 28 shows a cross-sectional view of a laminated cooler 708 as an example.

  In the ninth embodiment, a 3 in 1 type power card is applied to the third embodiment (FIG. 14). In other words, the cooling load of the cooling tube 81 is leveled by alternately arranging the double-sided cooling type power card and the single-sided cooling type power card in the eighth embodiment. It can be said. FIG. 29 shows a cross-sectional view of a laminated cooler 709 as an example.

  Here, the load distribution state of the cooling tube 81 was measured for the seventh to ninth embodiments (FIGS. 26, 28, and 29) and the reference embodiments (FIG. 27) described so far. A result is demonstrated with the graph of FIG. This measurement was performed by the same method as described in the description of the graph of FIG. 15 ([0062] to [0064]). However, a refrigerant adjusted to have a boiling point of 100 ° C. or higher by adding ethylene glycol to pure water was used. The number of the cooling tube 81 is up to 5. Furthermore, the upper limit value of the temperature rise width in each cooling tube 81 was set to 105 ° C. From the graph of FIG. 30, it is possible to read substantially the same results as described in [0065] to [0069] for the graph of FIG. The above is the description of the seventh to ninth embodiments.

[Tenth embodiment]
Next, the tenth embodiment will be described. A cross-sectional view of the laminated cooler 710 according to the tenth embodiment is shown in FIG. The stacked cooler 710 of FIG. 31 is obtained by modifying the following two points based on the stacked cooler 707 (FIG. 26) of the seventh embodiment.
-The direction of the 3-in-1 single-sided cooling power card 80 for the lower arm is reversed in the horizontal direction in the figure.
Remove the cooling tube 81 between the upper arm 3-in-1 single-sided cooling power card 79 and the lower-arm 3-in-1 single-sided cooling power card 80, that is, the second cooling tube 81 from the left in FIG.

  In the stacked cooler 710 of FIG. 31, the upper arm 3 in 1 single-sided cooling power card 79 and the lower arm 3 in 1 single-sided cooling power card 80 are in close contact with each other with their non-heat dissipating surfaces facing each other. There is no cooling tube 81 in the meantime. This is because the non-heat dissipating surfaces do not require cooling here. Therefore, in the laminated cooler 710, the cooling tube 81 is reduced by one as compared with the laminated cooler 707 of FIG. FIG. 32 shows a measurement result similar to FIG. 30 regarding the load distribution state of each cooling tube 81 in the stacked cooler 710 of FIG. In FIG. 32, the number 2 of the cooling tube 81 is a missing number. In the graph of FIG. 32, almost the same result as the third level from the top of the graph of FIG. 30 (result of the form of FIG. 28) is obtained.

  When the stacked cooler 710 is compared with the stacked cooler 708 of FIG. 28, the number of cooling tubes 81 is the same. However, the multilayer cooler 710 has an advantage that the inductance of the wiring of the first motor drive circuit 4 is smaller than that of the multilayer cooler 708. For this reason, it is difficult for surges to occur.

  The reason why the stacked cooler 710 (FIG. 31) has such an advantage is that the distance between the common high-side electrode plate 33 and the common low-side electrode member 38 is smaller than that in the case of FIG. This is due to the stacking order of the portions of the first motor drive circuit 4. In the laminated cooler 708 of FIG. 28, a cooling tube 81 is disposed between the 3-in-1 single-sided cooling power card 79 for the upper arm and the 3-in-1 single-sided cooling power card 80 for the lower arm, whereas the laminated cooling of FIG. This is because the cooling tube 81 is not in that position in the vessel 710.

  In the stacked cooler 710 shown in FIG. 31, the entire upper arm 3 in 1 single-sided cooling power card 79 and lower arm 3 in 1 single-sided cooling power card 80 in the first motor drive circuit 4 are horizontally reversed in the figure. May be. The above is the description of the tenth embodiment.

[Eleventh and twelfth forms]
The inductance reduction in the portion of the first motor drive circuit 4 as in the tenth embodiment can be achieved even if the first motor drive circuit 4 is constituted by a double-sided cooling type power card. The eleventh form is a specific example of this. A cross section of the laminated cooler 714 is shown in FIG. The laminated cooler 714 in FIG. 33 is obtained by removing the second cooling tube 81 from the left in the figure and the insulating plates 73 on both sides thereof based on the laminated cooler in FIG. In the first motor drive circuit 4 in FIG. 33, the distance between the common high-side electrode plate 33 and the common low-side electrode plate 36 is the same as that in FIG. 27 because the cooling tube 81 and the insulating plate 73 are removed. Smaller than point. For this reason, it has an inductance reduction effect as in the case of the tenth embodiment.

  In the first motor drive circuit 4 in the stacked cooler 714 of FIG. 33, three middle-side electrode plates 34 of the 3-in-1 double-sided cooling type power card 77 for the upper arm and three pieces of 3-in-1 double-sided cooling type power card 78 for the lower arm. The middle side electrode plate 35 is in direct contact with nothing in between. As a result, electrical connection is established between the 3-in-1 double-sided cooling power card 77 for the upper arm and the 3-in-1 double-sided cooling power card 78 for the lower arm. For this reason, it is not necessary to have a bus bar for one of the middle side electrode plate 34 and the middle side electrode plate 35. In [0091] and [0093], it has been described that a bus bar is provided in either case. However, in this embodiment, it is sufficient if a bus bar is provided in either one for connection to a corresponding intermediate terminal.

  Note that the contact surface between the middle side electrode plate 34 and the middle side electrode plate 35 in this embodiment cannot be provided with the insulating sheet described in [0040]. However, as long as both the middle side electrode plate 34 and the middle side electrode plate 35 are provided with bus bars, an insulating sheet may be provided.

  In the laminated cooler 714 of this embodiment shown in FIG. 33, both the first motor drive circuit 4 and the second motor drive circuit 5 are constituted by a double-sided cooling type power card. However, the portion of the second motor drive circuit 5 is cooled by the three cooling tubes 81, whereas the first motor drive circuit 4 is only cooled by the two cooling tubes 81. That is, in this embodiment, the power card constituting the first motor drive circuit 4 is a double-sided cooling type as a structure of itself, but is substantially a single-sided cooling type in terms of arrangement in the stacked cooler 714. It can be said that it is handled.

  Therefore, the cooling capacity of the first motor drive circuit 4 is lower than the cooling capacity of the second motor drive circuit 5. Therefore, the stacked cooler 714 does not have an excessive cooling capacity in the first motor drive circuit 4. This is sufficient because the heat generation amount of the first motor drive circuit 4 is lower than the heat generation amount of the second motor drive circuit 5. Even in this case, since the cooling tube 81 and the insulating plate 73 are removed, the number of parts is reduced as compared with that of FIG.

  The twelfth embodiment further promotes the inductance reduction of the eleventh embodiment. A laminated cooler 715 according to the twelfth embodiment is shown in FIG. The difference between the stacked cooler 715 of FIG. 34 and FIG. 33 is that the upper arm 3-in-1 double-sided cooling power card 77 and the lower-arm 3-in-1 double-sided cooling power card 78 in the first motor drive circuit 4 are replaced. It is that you are. The insulating plate 73 is sandwiched between them. As a result, the distance between the common high-side electrode plate 33 and the common low-side electrode plate 36 is only the thickness of the insulating plate 73 and is very small. For this reason, the inductance of the first motor drive circuit 4 is further reduced compared to the eleventh embodiment.

  However, in the laminated cooler 715 of FIG. 34, bus bars are necessary for both the middle side electrode plate 34 and the middle side electrode plate 35. Further, the number of parts is increased as compared with FIG. In addition, by providing the insulating sheet 22 described in [0040] on at least one of the surface of the middle side electrode plate 34 and the surface of the middle side electrode plate 35, the insulating plate 73 between these surfaces is omitted. it can.

  In the stacked cooler 714 in FIG. 33 and the stacked cooler 715 in FIG. 34, modifications similar to those described in [0113] are possible. That is, in the first motor drive circuit 4, the entire upper arm 3 in 1 double-sided cooling power card 77 and lower arm 3 in 1 double-sided cooling power card 78 may be horizontally reversed in the drawing. The above is the description of the eleventh and twelfth aspects.

  In the forms using the 3in1 type power card described above (seventh to twelfth forms), the 3in1 type power card can be replaced with three 1in1 type power cards. That is, the upper arm 3-in-1 double-sided cooling power card 77 (FIG. 22) and the lower-arm 3-in-1 double-sided cooling power card 78 (FIG. 23) are placed by three 1-in-1 double-sided cooling power cards 72 (FIG. 7, etc.). Be replaced. The 3-in-1 single-sided cooling power card 79 for the upper arm and the 3-in-1 single-sided cooling power card 80 for the lower arm are shown in three 1-in-1 single-sided cooling power cards 82 (FIG. 10, a cross-sectional view is shown in FIG. 11 and the like). ). In this case, the three 1 in 1 single-sided cooling power cards 82 are arranged side by side in the same direction.

[13th form]
In a hybrid system of a hybrid vehicle, there are cases where a step-up / down circuit is inserted between the battery and the inverter circuit. There are two purposes. One is to reduce the motor current by boosting and supplying the battery voltage when driving the vehicle. The other is to step down the generated voltage of the motor during braking regeneration and use it to charge the battery. In that case, the part of the battery 1 in FIG. 1 is replaced with a battery 10 with a step-up / down circuit 39 added thereto as shown in FIG. In the thirteenth embodiment, the present invention is applied to the hybrid system having the step-up / step-down circuit 39.

  First, the step-up / step-down circuit 39 will be described. The step-up / step-down circuit 39 in FIG. 35 basically has a low voltage side portion (battery 10 in FIG. 35) between the middle side line 59 and the low side line 12 and a high voltage between the high side line 11 and the low side line 12. This is a circuit that performs voltage conversion between the side portions (that is, the first motor drive circuit 4 and the second motor drive circuit 5 in FIG. 1). The step-up / down circuit 39 includes a reactor 60 and transistors 61, 62, 63 and 64.

  Specifically, a transistor 61 and a transistor 63 are arranged in parallel between the high side line 11 and the middle side line 59. In the buck-boost circuit 39, these two transistors are referred to as upper arm transistors. Further, a transistor 62 and a transistor 64 are arranged in parallel between the middle side line 59 and the low side line 12. These two transistors are called lower arm transistors. The reactor 60 is disposed at a position between the transistor groups 61 to 64 and the battery 10. The position of the reactor 60 is on the middle side line 59 in FIG. 35, but may be a position between the transistor groups 62 and 64 and the battery 10 on the low side line 12. Incidentally, the control electrode P and the protection diode D mentioned in the description of the circuit in FIG. 1 are also provided in the transistors 61, 62, 63, 64 in FIG.

  In FIG. 35, both the upper arm and the lower arm are described as two transistors in parallel. However, this is not a requirement. When the current load of the circuit is small, each of the upper and lower arms may be composed of one transistor. Conversely, when the load is large, it may be configured as a parallel arrangement of three or more transistors. In the following description, it is assumed that the upper and lower arms are in parallel with two transistors unless otherwise specified.

  The operation of the step-up / down circuit 39 differs between when the vehicle is driven and when braking is regenerated. When the vehicle is driven, the lower arm transistors 62 and 64 are repeatedly turned on and off, whereas the upper arm transistors 61 and 63 are fixed off. On the other hand, during braking regeneration, the upper arm transistors 61 and 63 are repeatedly turned on and off, whereas the lower arm transistors 62 and 64 are fixed off. That is, the upper arm and the lower arm are not turned on at the same time.

  The step-up / step-down circuit 39 is also incorporated in the stacked cooler together with the first motor drive circuit 4 and the second motor drive circuit 5 of FIG. Therefore, the transistors 61 to 64 in FIG. 35 are also made into power cards like the transistors in FIG. The power card used in the thirteenth embodiment is a parallel 2-in-1 double-sided cooling power card 83 as shown in the cross-sectional view of FIG. 36 includes a collector electrode plate 84 and an emitter electrode plate 85. The parallel 2-in-1 double-sided cooling power card 83 shown in FIG. In the parallel 2-in-1 double-sided cooling power card 83, most of one surface is occupied by the collector electrode plate 84, and most of the other surface is occupied by the emitter electrode plate 85. Both of these two electrode plates have a function as a heat sink. In other words, both sides are heat dissipation surfaces. The collector electrode plate 84 is a common collector electrode for the two transistors (61 and 63 or 62 and 64) arranged side by side in FIG. The emitter electrode plate 85 is a common emitter electrode for two transistors arranged side by side.

  The semiconductor portion 15 and the block electrode 16 are sandwiched between two portions between the collector electrode plate 84 and the emitter electrode plate 85. These two semiconductor portions 15 are the two transistors described above. The reason for the presence of the block electrode 16 is the same as in the case of the various double-sided cooling power cards described so far. In the parallel 2-in-1 double-sided cooling type power card 83, bus bars are provided on the collector electrode plate 84 and the emitter electrode plate 85, respectively. In addition, a control terminal is provided for each of the two semiconductor portions 15.

  To construct the step-up / step-down circuit 39 of FIG. 35, two parallel 2-in-1 double-sided cooling power cards 83 are required. FIG. 37 shows a cross-sectional view of a stacked cooler 716 incorporating a step-up / step-down circuit 39 composed of two parallel 2-in-1 double-sided cooling type power cards 83. This is the thirteenth form. 37 includes eight cooling tubes 71, six N-shaped 2-in-1 double-sided cooling power cards 75 (see FIG. 17), and two parallel 2-in-1 double-sided cooling power cards 83 (see FIG. 36). For example).

  The step-up / step-down circuit 39 in the stacked cooler 716 of FIG. 37 is located between two of the eight cooling tubes 71 at the right end in the figure. There, two parallel 2-in-1 double-sided cooling type power cards 83 are sandwiched between two cooling tubes 71. In the drawing, the left power card 83 is the upper arm (transistors 61 and 63), and the right power card 83 is the lower arm (transistors 62 and 64). Of course, the left arm power card 83 for the upper arm is in charge of the operation of the conduction state between the high side line 11 and the middle side line 59. The power card 83 on the right side for the lower arm is in charge of the operation of the conduction state between the middle side line 59 and the low side line 12. In this step-up / down circuit 39, the emitter electrode plate 85 of the upper arm and the collector electrode plate 84 of the lower arm are in direct contact with nothing in between. As a result, conduction between the power cards 83 of the upper and lower arms is taken.

  Therefore, either one of the upper arm emitter electrode plate 85 and the lower arm collector electrode plate 84 need not have a bus bar. In [0129], it has been described that a bus bar is provided in either case. However, in the configuration of FIG. 37, it is sufficient that a bus bar is provided on either side for connection to the middle side line 59 in FIG. . Of course, the insulating sheet described in [0040] cannot be provided on the contact surface between the emitter electrode plate 85 of the upper arm and the collector electrode plate 84 of the lower arm. However, if both the upper arm emitter electrode plate 85 and the lower arm collector electrode plate 84 are provided with bus bars, an insulating sheet may be provided.

  In the step-up / step-down circuit 39 in the stacked cooler 716 of FIG. 37, the cooling tube 71 is not provided between the upper arm power card 83 and the lower arm power card 83. Accordingly, the cooling capacity of the step-up / down circuit 39 is weaker than that of the first motor drive circuit 4 and the second motor drive circuit 5. This is because in the first motor driving circuit 4 and the second motor driving circuit 5, only one power card is sandwiched between the two cooling tubes 71. However, the cooling capacity of the step-up / down circuit 39 is still sufficient for the reason described in [0127]. This is because when one transistor of the upper arm or the lower arm generates heat due to repeated ON / OFF, the other does not generate heat due to fixed OFF, but also absorbs the heat generated on the ON / OFF side and dissipates it. . That is, the power card 83 in FIG. 37 functions as a double-sided heat dissipation type in a pseudo manner. For this reason, the merit is great in that the number of parts is reduced without having excessive cooling capacity.

  Moreover, you may comprise the part of the 1st motor drive circuit 4 in FIG. 37 using the 2in1 single-sided cooling power card 76 (refer FIG. 18) like the lamination | stacking cooler 705 shown in FIG. This is because the cooling capacity required for the first motor drive circuit 4 is lower than the cooling capacity required for the second motor drive circuit 5 as described above. By doing so, the structure can be further simplified. As described in [0126], when the buck-boost circuit 39 is composed of one transistor for each of the upper and lower arms, a 1 in 1 type power card (“72” in FIG. 7) is used. When the step-up / step-down circuit 39 is composed of three transistors for each of the upper and lower arms, a 3 in 1 type power card (“83” in FIG. 36 is a three-element parallel type) can be used.

In the stacked cooler 716 of FIG. 37, the following modifications are possible.
The portion of the second motor drive circuit 5 may be configured using a U-shaped 2-in-1 double-sided cooling power card 74 (see FIG. 16) like the stacked cooler 704 shown in FIG. The first motor drive circuit 4 in this case may be configured by either a U-shaped 2 in 1 double-sided cooling power card 74 or a 2 in 1 single-sided cooling power card 76. However, for the same reason as described above, it is more advantageous to use the 2-in-1 single-sided cooling power card 76.
The first motor driving circuit 4 and the second motor driving circuit 5 may be interchanged in terms of arrangement.
As in the stacked cooler 706 shown in FIG. 21, the power card constituting the first motor drive circuit 4 and the power card constituting the second motor drive circuit 5 may be alternately arranged. Of course, the power card type in that case may be any of the variations described above.

  In addition, as described above, as shown in FIGS. 26 to 29, 31, 33, and 34, a 3 in 1 type power card may be used. The step-up / step-down circuit 39 in that case may be the same as the configuration shown in FIG. 37 or may be configured using a parallel 2-in-1 double-sided cooling power card 86 shown in FIG. The parallel 2-in-1 double-sided cooling power card 86 in FIG. 38 is the same as the parallel 2-in-1 double-sided cooling power card 83 in FIG. 36, but only the size is matched to the 3-in-1 type power card.

  In the stacked cooler 716 of this embodiment, the step-up / down circuit 39 can be modified. A modification is shown in the cross-sectional view of FIG. In this modification, the two parallel 2-in-1 double-sided cooling type power cards 83 in FIG. 37 are horizontally reversed in the figure, and an insulating plate 73 is sandwiched between them. The example of FIG. 39 has an advantage that the inductance of the step-up / down circuit 39 is small, although one more insulating plate 73 is required as compared with the configuration of FIG. This is because the collector electrode plate 84 of the upper arm and the emitter electrode plate 85 of the lower arm are arranged with only one insulating plate 73 interposed therebetween. In the example of FIG. 39, it is necessary to connect both the emitter electrode plate 85 of the upper arm and the collector electrode plate 84 of the lower arm to the middle side line 59 in FIG. The above is the description of the thirteenth embodiment.

[14th form]
The fourteenth form is a modification of the stacked cooler 716 of the thirteenth form. Specifically, the configuration of the power card for the transistors 61, 62, 63, and 64 in the step-up / down circuit 39 is changed. In this embodiment, as shown in FIG. 40, the transistors 61 and 62 constitute one power card, and the transistors 63 and 64 constitute one power card. That is, in the thirteenth embodiment, each of the upper and lower arms is used as one power card, whereas in this embodiment, two transistors in one row across the upper and lower arms are used as one power card.

  As the power card for this purpose, the U-shaped 2-in-1 double-sided cooling power card 74 (FIG. 16) or the N-shaped 2-in-1 double-sided cooling power card 75 (FIG. 17) can be used. In this embodiment, each of these power cards is operated in the conduction state between the high side line 11 and the middle side line 59 and in the conduction state between the middle side line 59 and the low side line 12. In charge.

  FIG. 41 shows an example in which the step-up / step-down circuit 39 is configured by using a U-shaped 2-in-1 double-sided cooling power card 74. In the example of FIG. 41, two U-shaped 2-in-1 double-sided cooling type power cards 74 are sandwiched between two cooling tubes 71. In the step-up / step-down circuit 39, the middle side electrode plates 25 of the two left and right power cards 74 are in direct contact with nothing in between. Therefore, it is not necessary to have a bus bar on the middle side electrode plate 25 for any one of the left and right power cards 74. In [0073], it has been described that the middle side electrode plate 25 is provided with a bus bar. However, in the configuration of FIG. 41, if a bus bar is provided on either side for connection to the middle side line 59 in FIG. It is enough.

  Of course, also here, the contact surface between the middle side electrode plates 25 cannot be provided with the insulating sheet described in [0040]. However, if the middle side electrode plate 25 of both power cards 74 is provided with a bus bar, an insulating sheet may be provided. In the step-up / step-down circuit 39 of the configuration example of FIG. 41, the same effect as described in [0133] can be obtained with respect to the cooling performance and the number of parts.

  FIG. 42 shows a configuration example in which the left and right U-shaped 2-in-1 double-sided cooling power cards 74 in the configuration example of FIG. 41 are replaced and an insulating plate 73 is sandwiched between them. In the configuration example of FIG. 42, the same can be said with respect to the number of parts and the inductance as described in [0137]. This is because the high-side electrode plate 24 and the low-side electrode plate 26 are arranged with only one insulating plate 73 interposed therebetween. Moreover, there are two such places. In the configuration example of FIG. 42, it is necessary to connect the middle side electrode plates 25 of the left and right power cards 74 to the middle side line 59 in FIG.

  FIG. 43 is an example in which the step-up / step-down circuit 39 is configured using an N-shaped 2 in 1 double-sided cooling power card 75. This configuration example is obtained by replacing the two U-shaped 2-in-1 double-sided cooling power cards 74 in the configuration example of FIG. Even in the configuration example of FIG. 43, there is one place where the high-side electrode plate 24 and the low-side electrode plate 26 are disposed facing each other with only one insulating plate 73 interposed therebetween. Therefore, although it is more limited than the configuration example of FIG. 42, there is a certain degree of inductance reduction effect.

  Note that only one of the two power cards 75 shown in FIG. 43 can be reversed in the left-right direction in the drawing, but in that case, an inductance reduction effect is not obtained so much. It should be noted that the N-shaped 2-in-1 double-sided cooling power card 75 and the U-shaped 2-in-1 double-sided cooling power card 74 may be used as shown in FIG. 42 or 43.

  41 to 43, the first motor drive circuit 4 and the second motor drive circuit 5 in FIG. 37 are not shown. Of course, this part of the present embodiment may have the configuration shown in FIG. 37 or the configuration described in [0135] or [0136].

  In each of the step-up / step-down circuits 39 in the configuration examples of FIGS. 41 to 43, the upper arm transistor and the lower arm transistor are arranged side by side in the drawing. In other words, the transistors in the upper arm or the transistors in the lower arm are not arranged side by side in the drawing. This is because, as described in [0127], in the operation of the step-up / down circuit 39, the transistors that are simultaneously turned on are not arranged close to each other. This is not essential, but it is advantageous in that the heat generation points can be dispersed.

  Furthermore, in any of the step-up / step-down circuits 39 in the configuration examples of FIGS. 41 to 43, during operation of the step-up / down circuit 39, a transistor group that radiates heat to the cooling tube 71 on the right side in the figure and heat radiation to the cooling tube 71 on the left side in the figure. Each of the transistor groups that generate heat generates heat. This can be said in any of the operation modes during vehicle driving and braking regeneration. This is more advantageous than the configuration example of the thirteenth embodiment shown in FIG. 37 in terms of dispersion of the cooling tubes 71 as the heat radiation destination. The above is the description of the fourteenth embodiment.

  As described above in detail, in each stacked cooler (semiconductor device) according to the present embodiment, the amount of heat generated by the circuit differs depending on the portion, and therefore the cooling load of the cooling tube also differs. In view of this, in a part where the cooling load is low, a configuration in which the cooling capacity is lowered is adopted as long as the necessary cooling capacity can be maintained. That is, instead of the double-sided cooling type power card, a single-sided cooling type power card is adopted or the cooling tube is thinned out. As a result, while ensuring the necessary cooling capacity, the structure is simplified and the number of parts and costs are reduced.

  Note that this embodiment is merely an example, and does not limit the present invention. Therefore, the present invention can naturally be improved and modified in various ways without departing from the gist thereof. For example, the arrangement of the first motor drive circuit 4 and the second motor drive circuit 5 may be reversed in the stacked cooler configuration of FIG. Further, the step-up / down circuit 39 may be configured such that the battery side has a high voltage and the motor side has a low voltage. In the configuration example of FIG. 37, the arrangement of the first motor drive circuit 4, the second motor drive circuit 5, and the step-up / step-down circuit 39 may be changed as appropriate. In addition, regarding the distinction between the 1 in 1 type, the 2 in 1 type, and the 3 in 1 type among the types of power cards, in the above embodiment, the same type is basically used, but a mixed type can also be used.

DESCRIPTION OF SYMBOLS 1,10 Battery 2, 3 Motor 2U, 2V, 2W, 3U, 3V, 3W Motor side terminal 4 1st motor drive circuit 5 2nd motor drive circuit 11 High side line 12 Low side line 22 Insulation sheet 24 High side electrode plate 25 Middle side electrode plate 26 Low side electrode plate 33 Common high side electrode plate 34, 35 Middle side electrode plate 36 Common low side electrode plate 39 Buck-boost circuit 59 Middle side wires 71, 81 Coolers 72, 74-80, 82, 83, 86 Power card (semiconductor element)
73 Insulating plate 84 Collector electrode plate 85 Emitter electrode plate

Claims (8)

In a semiconductor device formed by laminating a cooler that passes a refrigerant inside and a semiconductor element,
As the semiconductor element,
A double-sided heat-dissipating semiconductor element that constitutes a circuit that generates a large amount of heat during operation, and that both surfaces are heat-radiating surfaces and both heat-radiating surfaces are in contact with the cooler;
As well as the circuit heating value is small at the time of operation, have a plurality of one-side radiating semiconductor element one surface is arranged such that the heat radiating surface is a heat radiating surface is in contact with the cooler,
Both the single-sided heat dissipating semiconductor devices, the heat radiation surface opposite to the non-radiating surface is also a semiconductor device which is characterized that you have been placed in contact with the cooler. In a semiconductor device formed by laminating a cooler that passes a refrigerant inside and a semiconductor element ,
As the semiconductor element,
A double-sided heat-dissipating semiconductor element that constitutes a circuit that generates a large amount of heat during operation, and that both surfaces are heat-radiating surfaces and both heat-radiating surfaces are in contact with the cooler;
As well as the circuit heating value is small at the time of operation, and a one side radiating surface and to the plurality of fragment surface radiating a semiconductor device which is placed in contact with the heat radiating surface is cooler,
Some of the single-sided heat dissipation semiconductor elements are:
Located at the end of the single-sided heat dissipation semiconductor element and the double-sided heat dissipation semiconductor element,
The heat dissipating surface is directed to the other single-side heat dissipating semiconductor element and the double-side heat dissipating semiconductor element and is in contact with a cooler;
The other side is arranged so as not to come into contact with other coolers,
The remaining one-side heat dissipation semiconductor elements are:
Both surfaces are in contact with the cooler,
The semiconductor device is characterized in that the heat dissipating surface is arranged in the same direction as the heat dissipating surface of the single-sided heat dissipating semiconductor element located at the end. The semiconductor device according to claim 2, comprising a plurality of the double-sided heat dissipation semiconductor elements,
The semiconductor device, wherein the single-sided heat dissipation semiconductor elements and the double-sided heat dissipation semiconductor elements are alternately arranged. In a semiconductor device formed by laminating a cooler that passes a refrigerant inside and a semiconductor element ,
As the semiconductor element,
A double-sided heat-dissipating semiconductor element that constitutes a circuit that generates a large amount of heat during operation, and that both surfaces are heat-radiating surfaces and both heat-radiating surfaces are in contact with the cooler;
As well as the circuit heating value is small at the time of operation, and a one side radiating surface and to the plurality of fragment surface radiating a semiconductor device which is placed in contact with the heat radiating surface is cooler,
The plurality of single-sided heat dissipation semiconductor elements are:
Each of the heat dissipation surfaces is in contact with the cooler,
A semiconductor device, wherein the other surfaces are arranged so as to contact each other. In a semiconductor device formed by laminating a cooler that passes a refrigerant inside and a semiconductor element,
As the semiconductor element,
A double-sided heat-dissipating semiconductor element that constitutes a circuit that generates a large amount of heat during operation and that both surfaces are in contact with the cooler;
As well as the circuit heating value is small at the time of operation, have a plurality of one-side radiating semiconductor element only one surface is placed in contact with the cooler,
Wherein the plurality of one-side radiating semiconductor device, a semiconductor device which is characterized that you have sandwiched overlapping between the cooler and the cooler. In a semiconductor device formed by laminating a cooler that passes a refrigerant inside and a semiconductor element ,
As the semiconductor element,
A double-sided heat-dissipating semiconductor element that constitutes a circuit that generates a large amount of heat during operation and that both surfaces are in contact with the cooler;
As well as the circuit heating value is small at the time of operation, only one surface and a plurality of pieces surface radiating a semiconductor device which is placed in contact with the cooler,
The plurality of single-sided heat dissipation semiconductor elements are:
Each said one surface is in contact with the cooler,
A semiconductor device, wherein the other surfaces are arranged so as to contact each other. In the semiconductor device according to any one of claims 1 to 6,
The double-sided heat dissipating semiconductor element constitutes a power motor drive circuit that controls the supply current from the power source in the vehicle to the motor in charge of power generation,
The semiconductor device according to claim 1, wherein the one-side heat dissipation semiconductor element constitutes a generator motor drive circuit that controls a regeneration current from a motor in charge of regenerative power generation to a power source in a vehicle. In the semiconductor device according to claim 5 or 6,
The double-sided heat dissipation semiconductor element constitutes a load driving circuit that controls a current between a power source and a load,
The semiconductor device according to claim 1, wherein the single-sided heat dissipation semiconductor element constitutes a step-up / step-down circuit that raises and lowers a voltage between a power source and a load.