JP5772236B2 - Electro-optical device manufacturing method and electro-optical device substrate - Google Patents

Description

  The present invention relates to a method for manufacturing an electro-optical device substrate in which a plurality of light-transmitting films having different refractive indexes are stacked on a reflective layer, and an electro-optical device substrate.

  In an electro-optical device such as a reflective liquid crystal device or a top emission type organic electroluminescence device, a reflective layer is provided on one side of the substrate. For example, in the case of a reflective liquid crystal device, the pixel electrode is often configured as a reflective layer.

  On the other hand, a plurality of light-transmitting films with different refractive indexes are laminated on the reflective pixel electrode (reflective layer) to form an increased reflective film made of a dielectric multilayer film and formed on the upper layer side of the dielectric multilayer film A structure in which the surface of the light-transmitting film is polished and flattened has been proposed (see Patent Document 1).

JP 2010-139920 A

  In an electro-optical device, when a light-transmitting film is polished or etched, the film thickness of the light-transmitting film is measured by a beam profile reflectometry (BPR: Beam Profile Reflectometry) or the like. It is preferable to set the polishing amount and the etching amount in advance based on the measurement result.

  However, in the beam profile reflectance measurement method, etc., after forming a light-transmitting film, light is irradiated to the reflective layer or the reflective pattern for monitoring provided separately from the reflective layer, and the film thickness is determined based on the detection result of the reflected light. Therefore, when the increased reflection film is formed as in the configuration described in Patent Document 1, the film thickness cannot be accurately measured due to the influence of the increased reflection film. For this reason, conventionally, there is a problem that it is difficult to appropriately set the polishing amount and the etching amount based on the measurement result of the film thickness.

  In view of the above problems, the problem of the present invention is that even when a plurality of light-transmitting films having different refractive indexes are laminated on the upper layer of the reflective layer, the polishing amount, etching amount, etc. It is an object of the present invention to provide an electro-optical device substrate manufacturing method and an electro-optical device substrate in which the removal amount can be set appropriately.

  In order to solve the above problems, in the method for manufacturing a substrate for an electro-optical device according to the present invention, a reflective layer is formed in an image display region on one surface side of the substrate, and an end portion of the substrate and the image display region are formed. A reflective pattern for monitoring is formed on the same layer as the reflective layer or on the lower layer side of the reflective layer, and a first refractive index is formed on the reflective layer and on the upper layer side of the reflective pattern for monitor. A first light-transmitting film forming step for forming the first light-transmitting film; and a second light-transmitting film for forming a second light-transmitting film having a second refractive index different from the first refractive index on the first light-transmitting film. Forming a second light-transmitting film removing step of removing a portion of the second light-transmitting film overlapping the reflection pattern for monitoring; and setting the first refractive index on the upper side of the reflection layer and the reflection pattern for monitoring. A third light transmissive film forming step of forming a third light transmissive film having Measured in a film thickness measuring step for measuring the film thickness of the light-transmitting film overlapping the upper layer side of the monitor reflective pattern based on the reflected light when the monitor reflective pattern is irradiated with light, and in the film thickness measuring step A film removal step of removing the film from the surface side of the third light-transmitting film based on the removal amount set from the film thickness measurement result.

  In the present invention, the first light transmissive film having the first refractive index, the second light transmissive film having the second refractive index, and the third light transmissive having the first refractive index are formed on the reflective layer and the reflective pattern for monitoring. A film is formed, and the second light-transmitting film is removed from the upper layer of the monitor reflection pattern. Therefore, after forming the third light-transmitting film, when irradiating the reflective pattern for monitoring with light and measuring the film thickness based on the detection result of the reflected light, the upper layer of the reflective pattern for monitoring has a refractive index. The same 1st light transmission film and 3rd light transmission film have overlapped, and the 2nd light transmission film from which refractive index differs does not exist. Therefore, the film thickness measurement result is not affected by the second light-transmitting film, that is, the dielectric multilayer film. Therefore, since the film thickness of the translucent film or the like can be accurately measured, the polishing amount and the etching amount can be appropriately set based on the measurement result of the film thickness.

  In the present invention, the first light-transmitting film, the second light-transmitting film, and the third light-transmitting film may employ a configuration that constitutes an increased reflection film. Particularly in such a configuration, it is necessary to accurately control the film thickness of the third light-transmitting film after polishing, and according to the present invention, the film thickness of the third light-transmitting film or the like can be accurately measured. Therefore, the polishing amount can be set appropriately, and the thickness of the third light-transmitting film after polishing can be accurately controlled.

  In the present invention, it is preferable that at least a part of the first light transmissive film is also removed in the second light transmissive film removing step. According to this configuration, when measuring the film thickness of the third light-transmitting film, it is possible to reliably eliminate the influence of the second light-transmitting film.

  In the present invention, the reflective layer is a reflective pixel electrode, a conductive layer is formed on one side of the substrate before the first light-transmitting film forming step, and the film removing step includes A polishing step of polishing the third light-transmitting film to flatten the surface of the third light-transmitting film, and a contact hole reaching the conductive layer from the surface side of the third light-transmitting film after the polishing step It is possible to employ a configuration in which a terminal electrode that conducts to the conductive layer through the contact hole is formed on the third light-transmitting film after the etching step. According to this configuration, it is possible to appropriately set the polishing amount for the third light-transmitting film and the etching amount from the third light-transmitting film to the conductive layer.

  In the present invention, the reflective layer is a reflective pixel electrode, and in the film removal step, a polishing step is performed in which the third light transmissive film is polished to flatten the surface of the third light transmissive film. Can be adopted.

  In this case, it is preferable that the reflection pattern for monitoring is formed in the same layer as the pixel electrode. According to this configuration, the film thickness of the third light transmissive film can be accurately measured.

  The monitor reflection pattern may be formed on a lower layer side than the pixel electrode, and an interlayer insulating film having the first refractive index may be provided between the monitor reflection pattern and the pixel electrode. Good. According to such a configuration, since only the interlayer insulating film having the first refractive index exists in the upper layer of the monitor reflection pattern, the film thickness of the third light-transmitting film can be accurately measured.

  In the present invention, a conductive layer is formed on one side of the substrate before the first light transmissive film forming step, and in the film removal step, the conductive layer is formed from the surface side of the third light transmissive film. It is possible to adopt a configuration in which etching for forming a reaching contact hole is performed, and a terminal electrode conducting to the conductive layer through the contact hole is formed on the third light-transmitting film after the film removing step. .

  In this case, it is preferable that the reflective pattern for monitoring is formed in the same layer as the conductive layer. According to this configuration, the film thickness of the third light transmissive film can be accurately measured.

  Further, the monitor reflective pattern may be formed on a lower layer side than the conductive layer, and an interlayer insulating film having the first refractive index may be provided between the monitor reflective pattern and the conductive layer. Good. According to such a configuration, since only the interlayer insulating film having the first refractive index exists in the upper layer of the monitor reflection pattern, the film thickness of the third light-transmitting film can be accurately measured.

  The present invention can also be defined as follows as a substrate for an electro-optical device. That is, the substrate for an electro-optical device according to the present invention includes a reflective layer formed in an image display region on one side of the substrate, and an end of the substrate and the image display on one side of the substrate. The monitor reflection pattern provided on the substrate side from the reflection layer, or the same layer as the reflection layer, and the reflective layer and the monitor reflection pattern are provided so as to overlap the region on the opposite side of the substrate. A first light-transmitting film having a first refractive index, and the first light-transmitting film on the opposite side of the first light-transmitting film from the substrate, overlapping the reflective layer and not overlapping the monitor reflective pattern, A second light transmissive film having a second refractive index different from the first refractive index, and the reflective layer and the reflective pattern for monitoring on the opposite side of the second light transmissive film from the substrate. Third transparency with 1 refractive index And having a film.

  According to such an electro-optical device substrate, after forming each film, it is possible to measure the film thickness of the light-transmitting film that overlaps the monitor reflection pattern on the side opposite to the substrate.

1 is a block diagram showing an electrical configuration of an electro-optical device according to Embodiment 1 of the present invention. FIG. FIG. 3 is an explanatory diagram of a liquid crystal panel of the electro-optical device according to the first embodiment of the invention. FIG. 3 is an explanatory diagram of a pixel of the electro-optical device according to the first embodiment of the invention. FIG. 3 is an explanatory diagram schematically illustrating a configuration of terminal electrodes and the like of the electro-optical device according to the first embodiment of the present invention compared to the configuration of a pixel. FIG. 6 is an explanatory diagram of a large substrate used for manufacturing an element substrate of the electro-optical device according to the first embodiment of the invention. 5 is a process cross-sectional view illustrating a method for manufacturing an element substrate in the process for manufacturing the electro-optical device according to the first embodiment of the invention. 5 is a process cross-sectional view illustrating a method for manufacturing an element substrate in the process for manufacturing the electro-optical device according to the first embodiment of the invention. FIG. 6 is an explanatory diagram schematically showing a configuration of terminal electrodes and the like of an electro-optical device according to a second embodiment of the present invention compared to the configuration of a pixel. 1 is a schematic configuration diagram of a projection display device using an electro-optical device to which the present invention is applied.

  As an embodiment of the present invention, an example in which the present invention is applied to an element substrate (electro-optical device substrate) of an active matrix liquid crystal device and a manufacturing method thereof among various electro-optical devices will be described. In the drawings to be referred to in the following description, the scales are different for each layer and each member so that each layer and each member have a size that can be recognized on the drawing. In addition, when the direction of the current flowing through the field effect transistor is reversed, the source and the drain are switched. In the following description, for convenience, the side to which the pixel electrode is connected is used as the drain and the data line is connected. The side will be described as a source. Further, when describing the layers formed on the element substrate, the upper layer side or the surface side means the side opposite to the side where the substrate body of the element substrate is located (the side on which the counter substrate is located), and the lower layer side means It means the side where the substrate body of the element substrate is located. In describing the layers formed on the counter substrate, the upper layer side or the surface side means the side opposite to the side where the substrate body of the counter substrate is located (the side where the element substrate is located), and the lower layer side is It means the side where the substrate body of the counter substrate is located.

[Embodiment 1]
(overall structure)
FIG. 1 is a block diagram showing an electrical configuration of an electro-optical device according to Embodiment 1 of the present invention. In FIG. 1, an electro-optical device 100 according to this embodiment is a liquid crystal device having a liquid crystal panel 100p in a TN (Twisted Nematic) mode or a VA (Vertical Alignment) mode, and the liquid crystal panel 100p includes a plurality of pixels in the central region. 100a includes an image display area 10a (pixel arrangement area / effective pixel area) arranged in a matrix. In the liquid crystal panel 100p, in an element substrate 10 (see FIG. 2 and the like) to be described later, a plurality of data lines 6a and a plurality of scanning lines 3a extend vertically and horizontally inside the image display region 10a. A pixel 100a is configured at a position corresponding to. In each of the plurality of pixels 100a, a pixel transistor 30 including a field effect transistor (switching element) and a pixel electrode 9a described later are formed. The data line 6 a is electrically connected to the source of the pixel transistor 30, the scanning line 3 a is electrically connected to the gate of the pixel transistor 30, and the pixel electrode 9 a is electrically connected to the drain of the pixel transistor 30. Has been. Thus, in the electro-optical device 100, the plurality of pixel electrodes 9a and the plurality of pixel transistors 30 are formed corresponding to each of the plurality of pixels 100a.

  In the element substrate 10, a scanning line driving circuit 104 and a data line driving circuit 101 are provided on the outer peripheral side of the image display region 10 a. The data line driving circuit 101 is electrically connected to each data line 6a, and sequentially supplies the image signal supplied from the image processing circuit to each data line 6a. The scanning line driving circuit 104 is electrically connected to each scanning line 3a, and sequentially supplies a scanning signal to each scanning line 3a.

  In each pixel 100a, the pixel electrode 9a is opposed to a common electrode formed on a counter substrate 20 (see FIG. 2 and the like), which will be described later, via a liquid crystal layer, thereby forming a liquid crystal capacitor 50a. Further, a storage capacitor 55 is added to each pixel 100a in parallel with the liquid crystal capacitor 50a in order to prevent fluctuation of the image signal held in the liquid crystal capacitor 50a. In this embodiment, in order to form the storage capacitor 55, the element substrate 10 is formed with the capacitor line 5b extending across the plurality of pixels 100a, and the common potential Vcom is applied to the capacitor line 5b. It is electrically connected to the constant potential wiring 7r.

(Configuration of liquid crystal panel 100p and element substrate 10)
FIG. 2 is an explanatory diagram of the liquid crystal panel 100p of the electro-optical device 100 according to the first embodiment of the present invention. FIGS. 2A and 2B each show the liquid crystal panel 100p together with each component of the counter substrate. It is the top view seen from the side, and its HH 'sectional drawing.

  As shown in FIG. 2, in the liquid crystal panel 100p, the element substrate 10 (electro-optical device substrate) and the counter substrate 20 are bonded to each other with a sealant 107 through a predetermined gap. It is provided in the shape of a frame along the outer edge. The sealing material 107 is an adhesive made of a photo-curing resin, a thermosetting resin, or the like, and is mixed with a gap material 107a such as glass fiber or glass beads for setting the distance between both substrates to a predetermined value. In the liquid crystal panel 100p, a liquid crystal layer 50 (electro-optical material layer) made of various liquid crystal materials (electro-optical materials) is formed in a region surrounded by the sealing material 107 between the element substrate 10 and the counter substrate 20. Is provided. In this embodiment, the sealing material 107 is formed with a discontinuous portion used as the liquid crystal injection port 107c, and the liquid crystal injection port 107c is sealed with the sealing material 108 after the liquid crystal material is injected.

  In the liquid crystal panel 100p having such a configuration, the element substrate 10 and the counter substrate 20 are both square, and the image display area 10a described with reference to FIG. 1 is provided as a square area in the approximate center of the liquid crystal panel 100p. ing. Corresponding to this shape, the sealing material 107 is also provided in a substantially square shape, and the outer side of the image display area 10a is a rectangular frame-shaped outer peripheral area 10c.

  In the element substrate 10, the data line driving circuit 101 and the plurality of terminal electrodes 102 are formed along one side of the element substrate 10 in the outer peripheral region 10 c, and the scanning line driving circuit is formed along another side adjacent to the one side. 104 is formed. The terminal electrode 102 is connected to a flexible wiring board (not shown), and various potentials and various signals are input to the element substrate 10 through the flexible wiring board.

  As will be described later in detail with reference to FIG. 3 and the like, FIG. 1 is shown in the image display region 10a on the side of the one surface 10s facing the counter substrate 20 out of the one surface 10s and the other surface 10t of the element substrate 10. The pixel transistor 30 described with reference and the pixel electrode 9a electrically connected to the pixel transistor 30 are formed in a matrix, and the alignment film 16 is formed on the upper side of the pixel electrode 9a.

  Further, on the one surface 10 s side of the element substrate 10, in the outer peripheral region 10 c outside the image display region 10 a, the rectangular frame-shaped peripheral region 10 b sandwiched between the image display region 10 a and the sealing material 107 includes pixels. A dummy pixel electrode 9b formed simultaneously with the electrode 9a is formed. In the dummy pixel electrode 9b, adjacent dummy pixel electrodes 9b are connected to each other by a narrow connecting portion (not shown). The dummy pixel electrode 9b is applied with the common potential Vcom, and prevents the disorder of the alignment of liquid crystal molecules at the outer peripheral side end of the image display region 10a. Further, the dummy pixel electrode 9b compresses the difference in height between the image display region 10a and the peripheral region 10b when the surface on which the alignment film 16 is formed in the element substrate 10 is flattened by polishing. This contributes to making the surface on which the film is formed flat. In some cases, no potential is applied to the dummy pixel electrode 9b, and the dummy pixel electrode 9b is potentialally floated. Even in this case, the dummy pixel electrode 9b has a height difference between the image display region 10a and the peripheral region 10b. This contributes to compressing the difference in position and making the surface on which the alignment film 16 is formed flat.

  A common electrode 21 is formed on the side of the one surface 20 s facing the element substrate 10 out of the one surface 20 s and the other surface 20 t of the counter substrate 20. The common electrode 21 is formed across the plurality of pixels 100a as substantially the entire surface of the counter substrate 20 or a plurality of strip electrodes. In this embodiment, the common electrode 21 is formed on substantially the entire surface of the counter substrate 20.

  A light shielding layer 29 is formed on the lower side of the common electrode 21 on the one surface 20 s side of the counter substrate 20, and an alignment film 26 is laminated on the surface of the common electrode 21. In this embodiment, the light shielding layer 29 is formed as a frame portion 29 a extending along the outer periphery of the image display region 10 a, and the image display region 10 a is defined by the inner periphery of the light shielding layer 29. In the present embodiment, the light shielding layer 29 is also formed as a black matrix portion 29b that overlaps the inter-pixel region 10f sandwiched between the adjacent pixel electrodes 9a. Here, the frame portion 29 a is formed at a position overlapping the dummy pixel electrode 9 b, and the outer peripheral edge of the frame portion 29 a is at a position with a gap between it and the inner peripheral edge of the sealing material 107. Therefore, the frame portion 29a and the sealing material 107 do not overlap.

  In the liquid crystal panel 100p, inter-substrate conduction electrodes 25 are formed on the four corners on the one surface 20s side of the counter substrate 20 outside the sealing material 107, and on the one surface 10s side of the element substrate 10. The inter-substrate conduction electrodes 19 are formed at positions facing the four corners of the counter substrate 20 (inter-substrate conduction electrodes 25). In this embodiment, the inter-substrate conduction electrode 25 is composed of a part of the common electrode 21. The inter-substrate conduction electrode 19 is electrically connected to the constant potential wiring 7r to which the common potential Vcom is applied, and the constant potential wiring 7r is electrically connected to the terminal electrode 102a for common potential application among the terminal electrodes 102. . An inter-substrate conducting material 109 containing conductive particles is disposed between the inter-substrate conducting electrode 19 and the inter-substrate conducting electrode 25, and the common electrode 21 of the counter substrate 20 is connected to the inter-substrate conducting electrode 19. The element substrate 10 is electrically connected via the inter-substrate conductive material 109 and the inter-substrate conductive electrode 25. Therefore, the common potential Vcom is applied to the common electrode 21 from the element substrate 10 side. The sealing material 107 is provided along the outer peripheral edge of the counter substrate 20 with substantially the same width dimension. For this reason, the sealing material 107 is substantially rectangular. However, the sealing material 107 is provided so as to pass inside avoiding the inter-substrate conducting electrodes 19 and 25 in a region overlapping the corner portion of the counter substrate 20, and the corner portion of the sealing material 107 has a substantially arc shape. .

  In this embodiment, the electro-optical device 100 is a reflective liquid crystal device, and the common electrode 21 is formed of a light-transmitting conductive film such as an ITO (Indium Tin Oxide) film or an IZO (Indium Zinc Oxide) film. 9a is formed of a reflective conductive film such as an aluminum film. In such a reflective liquid crystal device (electro-optical device 100), light incident from the counter substrate 20 side of the element substrate 10 and the counter substrate 20 is modulated while being reflected by the element substrate 10 and emitted. Is displayed.

  The electro-optical device 100 can be used as a color display device of an electronic apparatus such as a mobile computer or a mobile phone. In this case, a color filter (not shown) is formed on the counter substrate 20 or the element substrate 10. The electro-optical device 100 can be used as electronic paper. Further, in the electro-optical device 100, a polarizing film, a retardation film, a polarizing plate, and the like are predetermined with respect to the liquid crystal panel 100p according to the type of the liquid crystal layer 50 to be used and the normally white mode / normally black mode. Arranged in the direction. Furthermore, the electro-optical device 100 can be used as a light valve for RGB in a projection display device (liquid crystal projector) described later. In this case, each of the RGB electro-optical devices 100 receives light of each color separated through RGB color separation dichroic mirrors as projection light, so that no color filter is formed. .

  In the present embodiment, the case where the electro-optical device 100 is a reflective liquid crystal device used as a light valve for RGB in a projection display device to be described later will be mainly described. In the present embodiment, the electro-optical device 100 will be described focusing on the case where the liquid crystal layer 50 includes a VA mode liquid crystal panel 100p using a nematic liquid crystal compound having a negative dielectric anisotropy.

(Specific configuration of pixel 100p)
3A and 3B are explanatory diagrams of the pixel 100a of the electro-optical device 100 according to the first embodiment of the invention. FIGS. 3A and 3B are plan views of a plurality of adjacent pixels on the element substrate 10, respectively. FIG. 6 is a cross-sectional view of the electro-optical device 100 taken along the line FF ′. In FIG. 3A, each layer is represented by the following lines: light shielding layer 8a on the lower layer side = thin and long broken line semiconductor layer 1a = thin and short dotted line scanning line 3a = thick solid line drain electrode 4a = thin solid line Data line 6a and relay Electrode 6b = thin alternate long and short dash line Capacitance line 5b = thick alternate long and short dash line The upper light shielding layer 7a and relay electrode 7b = thin alternate long and two short dashes line Pixel electrode 9a = shown by a thick broken line. In FIG. 3A, the positions of the end portions of the layers where the end portions overlap each other are shifted so that the shape of the layers can be easily understood.

  As shown in FIG. 3A, a pixel electrode 9a is formed on each of the plurality of pixels 100a on one surface 10s of the element substrate 10 facing the counter substrate 20, and is sandwiched between adjacent pixel electrodes 9a. A data line 6a and a scanning line 3a are formed along the inter-pixel region 10f. In this embodiment, the inter-pixel region 10f extends vertically and horizontally, and the scanning line 3a is linear along the first inter-pixel region 10g extending in the X direction (first direction) in the inter-pixel region 10f. The data line 6a extends linearly along the second inter-pixel region 10h extending in the Y direction (second direction). Further, a pixel transistor 30 is formed corresponding to the intersection of the data line 6a and the scanning line 3a. In this embodiment, the pixel transistor 30 uses the intersection region of the data line 6a and the scanning line 3a and its vicinity. Is formed. A capacitance line 5b is formed on the element substrate 10, and a common potential Vcom is applied to the capacitance line 5b. In this embodiment, the capacitor line 5b is formed in a lattice shape extending so as to overlap the scanning line 3a and the data line 6a. A light shielding layer 7a is formed on the upper layer side of the pixel transistor 30, and the light shielding layer 7a extends so as to overlap the data line 6a. A light shielding layer 8a is formed on the lower layer side of the pixel transistor 30, and the light shielding layer 8a is an intersection between the main line portion linearly extending so as to overlap the scanning line 3a and the data line 6a and the scanning line 3a. And a sub-line portion extending so as to overlap the data line 6a.

  As shown in FIG. 3B, the element substrate 10 is formed on the substrate surface (on the one surface 10s facing the counter substrate 20) on the liquid crystal layer 50 side of the translucent substrate body 10w such as a quartz substrate or a glass substrate. The pixel electrode 9a, the pixel transistor 30 for pixel switching, and the alignment film 16 are mainly formed. The counter substrate 20 includes a translucent substrate body 20w such as a quartz substrate or a glass substrate, a light shielding layer 29 formed on a surface of the liquid crystal layer 50 side (one surface 20s facing the element substrate 10), a common electrode 21, And the alignment film 26 as a main component.

  In the element substrate 10, a lower light shielding layer 8 a made of a conductive film such as a conductive polysilicon film, a metal silicide film, a metal film, or a metal compound film is formed on the one surface 10 s side of the substrate body 10 w. . In this embodiment, the light shielding layer 8a is made of a light shielding film such as tungsten silicide (WSi), and when the light after passing through the electro-optical device 100 is reflected by another member, the reflected light is incident on the semiconductor layer 1a. This prevents the pixel transistor 30 from malfunctioning due to photocurrent. The light shielding layer 8a may be configured as a scanning line. In this case, the gate electrode 3c described later and the light shielding layer 8a are electrically connected.

A translucent insulating film 12 is formed on the upper surface side of the light shielding layer 8a on the one surface 10s side of the substrate body 10w, and the pixel transistor 30 including the semiconductor layer 1a on the surface side of the insulating film 12 is provided. Is formed. In this embodiment, the insulating film 12 is a silicon oxide film (including silicate glass) such as NSG (non-silicate glass), PSG (phosphorus silicate glass), BSG (boron silicate glass), or BPSG (boron phosphorus silicate glass). And made of a silicon nitride film. The insulating film 12 is formed of silane gas (SiH ₄ ), silane dichloride (SiCl ₂ H ₂ ), TEOS (tetraethoxysilane / tetraethylorthosilicate / Si (OC ₂ H ₅ ) ₄ ), TEB (tetra · It is formed by an atmospheric pressure CVD method, a low pressure CVD method, a plasma CVD method, or the like using ethyl boatrate), TMOP (tetramethyloxyphosphate), or the like.

  The pixel transistor 30 includes a semiconductor layer 1a having a long side direction in the extending direction of the data line 6a, and a central portion in the length direction of the semiconductor layer 1a extending in a direction orthogonal to the length direction of the semiconductor layer 1a. In this embodiment, the gate electrode 3c is formed of a part of the scanning line 3a. The pixel transistor 30 has a translucent gate insulating layer 2 between the semiconductor layer 1a and the gate electrode 3c. The semiconductor layer 1a includes a channel region 1g opposed to the gate electrode 3c via the gate insulating layer 2, and includes a source region 1b and a drain region 1c on both sides of the channel region 1g. In this embodiment, the pixel transistor 30 has an LDD structure. Therefore, each of the source region 1b and the drain region 1c includes a low concentration region on both sides of the channel region 1g, and includes a high concentration region in a region adjacent to the low concentration region on the opposite side to the channel region 1g.

  The semiconductor layer 1a is composed of a polysilicon film (polycrystalline silicon film) or the like. The gate insulating layer 2 includes a first gate insulating layer 2a made of a silicon oxide film obtained by thermally oxidizing the semiconductor layer 1a and a silicon oxide film made of a low pressure CVD method under a high temperature condition of 700 to 900 ° C. It has a two-layer structure with a two-gate insulating layer 2b. The gate electrode 3c and the scanning line 3a are made of a conductive film such as a conductive polysilicon film, a metal silicide film, a metal film, or a metal compound film. In this embodiment, the gate electrode 3c has a two-layer structure of a conductive polysilicon film and a tungsten silicide film.

  A translucent interlayer insulating film 41 made of a silicon oxide film such as NSG, PSG, BSG, or BPSG is formed on the upper layer side of the gate electrode 3c, and a drain electrode 4a is formed on the upper layer of the interlayer insulating film 41. Has been. In this embodiment, the interlayer insulating film 41 is made of a silicon oxide film. The drain electrode 4a is made of a conductive film such as a conductive polysilicon film, a metal silicide film, a metal film, or a metal compound film. In this embodiment, the drain electrode 4a is made of a titanium nitride film. The drain electrode 4 a is formed so as to partially overlap the drain region 1 c (pixel electrode side source / drain region) of the semiconductor layer 1 a, and through a contact hole 41 a penetrating the interlayer insulating film 41 and the gate insulating layer 2. It is electrically connected to the drain region 1c.

  A translucent etching stopper layer 49 made of a silicon oxide film or the like and a translucent dielectric layer 40 are formed on the upper layer side of the drain electrode 4a, and a capacitance is formed on the upper layer side of the dielectric layer 40. A line 5b is formed. As the dielectric layer 40, a silicon compound such as a silicon oxide film or a silicon nitride film can be used, and an aluminum oxide film, a titanium oxide film, a tantalum oxide film, a niobium oxide film, a hafnium oxide film, a lanthanum oxide film, zirconium A dielectric layer having a high dielectric constant such as an oxide film can be used. The capacitor line 5b is made of a conductive film such as a conductive polysilicon film, a metal silicide film, a metal film, or a metal compound film. In this embodiment, the capacitor line 5b has a three-layer structure of a titanium nitride film, an aluminum film, and a titanium nitride film. Here, the capacitor line 5 b overlaps with the drain electrode 4 a through the dielectric layer 40, and constitutes a storage capacitor 55.

  An interlayer insulating film 42 is formed on the upper layer side of the capacitor line 5b. On the upper layer side of the interlayer insulating film 42, the data line 6a and the relay electrode 6b are formed of the same conductive film. The interlayer insulating film 42 is made of a silicon oxide film. The data line 6a and the relay electrode 6b are made of a conductive film such as a conductive polysilicon film, a metal silicide film, a metal film, or a metal compound film. In this embodiment, the data line 6a and the relay electrode 6b are made of an aluminum alloy film or a laminated film of two to four layers of a titanium nitride film and an aluminum film. The data line 6a is electrically connected to the source region 1b (data line side source / drain region) through a contact hole 42a penetrating the interlayer insulating film 42, the etching stopper layer 49, the interlayer insulating film 41 and the gate insulating layer 2. The relay electrode 6 b is electrically connected to the drain electrode 4 a through a contact hole 42 b that penetrates the interlayer insulating film 42 and the etching stopper layer 49.

  A light-transmitting interlayer insulating film 44 made of a silicon oxide film or the like is formed on the upper side of the data line 6a and the relay electrode 6b. On the upper layer side of the interlayer insulating film 44, the light shielding layer 7a and the relay electrode 7b are formed. Are formed of the same conductive film. The interlayer insulating film 44 is made of, for example, a silicon oxide film formed by a plasma CVD method using tetraethoxysilane and oxygen gas or a plasma CVD method using silane gas and nitrous oxide gas, and the surface thereof is flat. It has become. The light shielding layer 7a and the relay electrode 7b are made of a conductive film such as a conductive polysilicon film, a metal silicide film, a metal film, or a metal compound film. In this embodiment, the light shielding layer 7a and the relay electrode 7b are made of an aluminum alloy film or a laminated film of two to four layers of a titanium nitride film and an aluminum film. The relay electrode 7 b is electrically connected to the relay electrode 6 b through a contact hole 44 a that penetrates the interlayer insulating film 44. The light shielding layer 7a extends so as to overlap the data line 6a, and functions as a light shielding layer. The light shielding layer 7a may be electrically connected to the capacitor line 5b and used as a shield layer.

  A light transmissive interlayer insulating film 45 made of a silicon oxide film or the like is formed on the upper side of the light shielding layer 7a and the relay electrode 7b. An aluminum film or an aluminum alloy film is formed on the upper side of the interlayer insulating film 45. A pixel electrode 9a (reflective layer) provided with a reflective metal film is formed. In this embodiment, the pixel electrode 9a has a two-layer structure of a lower layer titanium nitride film and an upper layer aluminum film. The interlayer insulating film 45 is formed with a contact hole 45a that reaches the relay electrode 7b through the interlayer insulating film 45. The pixel electrode 9a is electrically connected to the relay electrode 7b through the contact hole 45a. ing. As a result, the pixel electrode 9a is electrically connected to the drain region 1c through the relay electrode 7b, the relay electrode 6b, and the drain electrode 4a. The interlayer insulating film 45 is made of, for example, a silicon oxide film formed by a plasma CVD method using tetraethoxysilane and oxygen gas, a plasma CVD method using silane gas and nitrous oxide gas, or the like. In addition, the interlayer insulating film 45 may have a structure of a first insulating film on the lower layer side made of NSG (non-silicate glass) and a second insulating film on the upper layer side made of BSG (boron silicate glass). is there. In either case, the surface of the interlayer insulating film 45 is planarized.

  On the surface side of the pixel electrode 9a, a first light transmissive film 181 having a first refractive index, a second light transmissive film 182 having a second refractive index, and a third light transmissive film 17 having a first refractive index, Is formed. Here, the first light transmissive film 181 and the third light transmissive film 17 are silicon oxide films, and the refractive index (first refractive index) is about 1.5. The thickness of the first light-transmitting film 181 and the third light-transmitting film 17 that overlaps the pixel electrode 9a is about 75 nm. The second light transmitting film 182 is a silicon nitride film having a thickness of about 65 nm, and the refractive index (second refractive index) is about 1.9. Accordingly, the first light-transmitting film 181, the second light-transmitting film 182 and the third light-transmitting film 17 constitute a dielectric multilayer film in which dielectric films having different refractive indexes are alternately stacked. The first light-transmitting film 181, the second light-transmitting film 182 and the third light-transmitting film 17 (dielectric multilayer film) constitute a reflection increasing film 18 that increases the reflectance on the surface of the pixel electrode 9a.

  Here, the first light-transmitting film 181 is formed with a substantially constant thickness. On the other hand, the third light transmissive film 17 is formed as a planarization film obtained by planarizing the surface of a silicon oxide film formed with a film thickness of 350 nm by polishing, for example. For this reason, the third light-transmitting film 17 fills the concave portion generated between the adjacent pixel electrodes 9a, and the surface of the third light-transmitting film 17 has a region overlapping the pixel electrode 9a and the pixel electrode 9a. A continuous flat surface (plane) is formed in a region overlapping with each other.

An alignment film 16 made of polyimide or an inorganic alignment film is formed on the upper surface of the third light transmissive film 17. In this embodiment, the alignment film 16 is an obliquely deposited film of SiO _x (x <2), SiO ₂ , TiO ₂ , MgO, Al ₂ O ₃ , In ₂ O ₃ , Sb ₂ O ₃ , Ta ₂ O ₅ or the like. (Inclined vertical alignment film / inorganic alignment film).

(Configuration of counter substrate 20)
In the counter substrate 20, a light shielding layer 29, a transparent substrate body 20 w (translucent substrate) such as a quartz substrate or a glass substrate, on the liquid crystal layer 50 side surface (one surface 20 s facing the element substrate 10), An insulating film 28 made of a silicon oxide film or the like and a common electrode 21 made of a light-transmitting conductive film such as an ITO film are formed. An alignment film 26 made of polyimide or an inorganic alignment film is formed so as to cover the common electrode 21. Is formed. In this embodiment, the common electrode 21 is made of an ITO film. In this embodiment, the alignment film 26 is SiO _x (x <2), SiO ₂ , TiO ₂ , MgO, Al ₂ O ₃ , In ₂ O ₃ , Sb ₂ O ₃ , Ta ₂ O ₅ , as with the alignment film 16. It is an oblique vapor deposition film (gradient vertical alignment film / inorganic alignment film). The alignment films 16 and 26 tilt and vertically align the nematic liquid crystal compound having negative dielectric anisotropy used for the liquid crystal layer 50, and the liquid crystal panel 100p operates as a normally black VA mode. In this embodiment, as the alignment films 16 and 26, an oblique vapor deposition film of a silicon oxide film (SiO _x ) is used among various inorganic alignment films.

  Note that the data line driving circuit 101 and the scanning line driving circuit 104 described with reference to FIGS. 1 and 2 are complementary transistor circuits each including an n-channel driving transistor and a p-channel driving transistor. Etc. are configured. Here, the driving transistor is formed by utilizing a part of the manufacturing process of the pixel transistor 30. Therefore, the region where the data line driving circuit 101 and the scanning line driving circuit 104 are formed in the element substrate 10 also has a cross-sectional configuration substantially similar to the cross-sectional configuration shown in FIG.

(Specific configuration of terminal electrode 102)
FIG. 4 is an explanatory diagram schematically showing the configuration of the terminal electrode 102 and the like of the electro-optical device 100 according to Embodiment 1 of the present invention compared to the configuration of the pixel 100a. 4, (a1) and (a2) in FIG. 4 are an explanatory diagram schematically showing a planar configuration of the pixel 100a and an explanatory diagram schematically showing a sectional configuration of the pixel 100a. (B2) is a plan view of the terminal electrode 102 and a cross-sectional view when the element substrate 10 is cut at a position corresponding to the line PP ′. 4C1 and 4C2 are a plan view of the reflection pattern for monitoring and a cross-sectional view when the element substrate 10 is cut at a position corresponding to the line MM ′. In FIG. 4, the pixel 100a, the terminal electrode 102 formation region, and the monitor reflection pattern formation region are shown as the same height, but the terminal electrode 102 formation region and the monitor reflection pattern formation region are shown. May be formed lower than the pixel 100a.

  As shown in FIG. 4, in the electro-optical device 100 of the present embodiment, the terminal electrode 102 is formed so as to overlap the wiring 7s (conductive layer) made of the same conductive film as the light shielding layer 7a and the relay electrode 7b, for example. Yes. The region where the terminal electrode 102 is formed has a cross-sectional configuration substantially similar to that of the pixel 100a. More specifically, in the region where the terminal electrode 102 is formed, the insulating film 12, the second gate insulating layer 2 b of the gate insulating layer 2, the interlayer insulating film 41, the etching stopper layer 49, and the interlayer insulation are formed on one side of the substrate body 10 w. A film 42, an interlayer insulating film 44, and an interlayer insulating film 45 are formed in this order. Further, in the region where the terminal electrode 102 is formed, for the purpose of adjusting the height dimension with respect to the pixel 100a, etc., the conductive material constituting each of the light shielding layer 8a, the scanning line 3a, the capacitor line 5b, and the data line 6a of the pixel 100a. The same conductive films 8s, 3s, 5s, and 6s as the film are formed in this order. Further, between the interlayer insulating film 44 and the interlayer insulating film 45, a wiring 7s made of the same conductive film as the conductive film constituting the relay electrode 7b is formed.

  In this embodiment, when the terminal electrode 102 that is conductive to the wiring 7s is formed, the interlayer insulating film 45, the first light transmitting film 181, the second light transmitting film 182, and the third light transmitting film 17 are penetrated to reach the wiring 7s. The contact hole 17s is formed, and the terminal electrode 102 is electrically connected to the wiring 7s through the contact hole 17s. In this embodiment, the terminal electrode 102 is made of an ITO film or the like. Note that the inter-substrate conduction electrode 19 (terminal electrode) shown in FIG.

(Specific configuration of reflection pattern for monitor)
As shown in FIGS. 4C1 and 4C2, in this embodiment, the outside of the image display area 10a of the element substrate 10 (electro-optical device substrate) (between the image display area 10a and the end of the element substrate 10). The monitor reflection patterns 7z and 9z described below are formed. The reflection patterns 7z and 9z for monitoring are outside the area where the element substrate 10 is cut out (the edge of the image display area 10a and the element substrate 10) in the large substrate 10x (electro-optical device substrate) used for manufacturing the element substrate 10. It may be formed between the part). In either case, the formation region of the monitor reflection patterns 7z and 9z has a structure shown in FIGS. 4C1 and 4C2 at the stage where the components of the element substrate 10 have been manufactured.

  More specifically, first, the formation areas of the monitor reflection patterns 7z and 9z have substantially the same cross-sectional configuration as the formation areas of the pixels 100a and the terminal electrodes 102, and an insulating film is formed on one surface side of the substrate body 10w. 12, the second gate insulating layer 2b of the gate insulating layer 2, the interlayer insulating film 41, the etching stopper layer 49, the interlayer insulating film 42, the interlayer insulating film 44, and the interlayer insulating film 45 are formed in this order. Further, in the formation region of the inter-substrate conduction electrode 19, each of the light shielding layer 8a, the scanning line 3a, the capacitor line 5b, and the data line 6a of the pixel 100a is provided for the purpose of adjusting the height dimension with respect to the pixel 100a. The same conductive films 8t, 3t, 5t, and 6t as the conductive films to be formed are formed in this order. Further, the same conductive film 7t as the conductive film constituting the relay electrode 7b is formed between the interlayer insulating film 44 and the interlayer insulating film 45.

  Here, between the interlayer insulating film 44 and the interlayer insulating film 45, a monitor reflection pattern 7z is formed of the same conductive film as the conductive film constituting the wiring 7s and the relay electrode 7b. No wiring or electrodes are formed on the upper layer of the pattern 7z. On the interlayer insulating film 45, a monitor reflection pattern 9z is formed of the same conductive film as that of the pixel electrode 9a.

  Here, the first light-transmitting film 181 and the third light-transmitting film 17 are formed on the upper layer side of the monitor reflection patterns 7z and 9z, but the second light-transmitting film 182 is not formed. For this reason, the interlayer reflection film 45, the first light transmission film 181 and the third light transmission film 17 are overlapped with the monitor reflection pattern 7z on the upper layer side, and these insulation films are all made of a silicon oxide film. In addition, the first light-transmitting film 181 and the third light-transmitting film 17 are overlapped on the monitor reflection pattern 9z on the upper layer side, and these insulating films are both made of a silicon oxide film.

(Method of manufacturing electro-optical device 100)
FIG. 5 is an explanatory diagram of a large substrate 10x used for manufacturing the element substrate 10 of the electro-optical device 100 according to Embodiment 1 of the present invention. 6 and 7 are process cross sections showing a method for manufacturing the element substrate 10 among the processes for manufacturing the electro-optical device 100 according to Embodiment 1 of the present invention. 6 and 7, only the upper layer side than the relay electrode 6b is shown except for FIG. 6A.

  When manufacturing the element substrate 10 of the electro-optical device 100 according to the present embodiment, as shown in FIG. 5, the intermediate substrate 10x in which a large number of element substrates 10 can be taken is performed up to an intermediate step, and then cut into individual sizes. To do. In the form shown in FIG. 5A among the large substrates 10x shown in FIG. 5, the outside of the region 10y cut out as the single-sized element substrate 10 in the large substrate 10x (the material removal region 10z / the image display region 10a and the large substrate). Reflecting patterns 7z and 9z for monitoring are formed between the end of 10x). On the other hand, in the embodiment shown in FIG. 5B, for the monitor, between the image display region 10 a and the end portion of the element substrate 10 in the region 10 y cut out as the single-size element substrate 10 in the large substrate 10 x. Reflective patterns 7z and 9z are formed.

  In forming the element substrate 10 using such a large substrate 10x, as shown in FIG. 6A, the layers up to the interlayer insulating film 44 are formed by a known method. Next, after forming a reflective metal film on the interlayer insulating film 44, patterning is performed, and the relay electrode 7b, the conductive film 7t, and the reflective pattern 7z for monitoring are formed on the interlayer insulating film 44.

  Next, as shown in FIG. 6B, after the interlayer insulating film 45 is formed, the surface is flattened by a method such as chemical mechanical polishing described later, and then the interlayer insulating film 45 is used by photolithography. A contact hole 45a is formed.

  Next, a pixel electrode metal film is formed on the interlayer insulating film 45 and then patterned, and as shown in FIG. 6C, the pixel electrode 9a (reflection layer) and the monitor reflection are formed on the interlayer insulating film 45. A pattern 9z is formed. In this embodiment, a metal film having a two-layer structure of a lower layer titanium nitride film and an upper layer aluminum film is formed as the pixel electrode metal film.

  Next, in the first light-transmitting film forming step shown in FIG. 6D, the thickness is adjusted to be in contact with the pixel electrode 9a on the upper layer side of the pixel electrode 9a and the monitor reflection patterns 7z and 9z by CVD or the like. A first light transmissive film 181 made of a silicon oxide film of about 75 nm is formed.

  Next, in the second light transmissive film forming step shown in FIG. 6E, a second light transmissive film 182 made of a silicon nitride film having a thickness of about 65 nm is formed on the first light transmissive film 181 by a CVD method or the like. Form.

  Next, in the second light transmissive film removing step shown in FIG. 7A, a resist mask is formed in the image display region 10a and the like, and etching is performed, so that the monitor reflective patterns 7z and 9z of the second light transmissive film 182 are formed. Remove the overlapping part. At this time, a part or the whole of the surface of the first light transmissive film 181 may be removed.

  Next, in the third light transmissive film forming step shown in FIG. 7B, a silicon oxide film having a thickness of about 350 nm is formed on the upper side of the pixel electrode 9a and the monitor reflective patterns 7z and 9z by a CVD method or the like. A third light-transmitting film 17 is formed.

  Next, in the film thickness measurement step shown in FIG. 7C, the film thickness of the translucent film overlapping the monitor reflection pattern 9z on the upper layer side is measured by a beam profile reflectance measurement method. More specifically, as shown by an arrow L1, based on the reflected light when the monitor reflection pattern 9z is irradiated with light, the transparent film (first transparent film) overlapping the monitor reflection pattern 9z on the upper layer side. The film thicknesses of the light film 181 and the third light-transmitting film 17) are measured. In such a beam profile reflectance measurement method, linearly polarized laser light is used, the reflectance profiles of the p-polarized component and the s-polarized component are obtained, and the film thickness is obtained. In addition, since the film thickness of the 1st light transmission film 181 is thin, even if it considers the setting film thickness at the time of film-forming as the 1st light transmission film 181 as it is, an error is small. Therefore, the film thickness of the third light transmissive film 17 can be measured from the result of measurement by the beam profile reflectance measurement method.

  Next, in the film removal step shown in FIG. 7D, the third light-transmitting film 17 is polished based on the removal amount (polishing amount) set from the film thickness measurement result measured in the film thickness measurement step. The third light-transmitting film 17 is thinned, and the surface of the third light-transmitting film 17 is a continuous flat surface (planar) (polishing step). As a result, the thickness of the portion of the third light transmissive film 17 that overlaps with the pixel electrode 9 a is about 75 nm, like the first light transmissive film 181. Chemical mechanical polishing can be employed for such polishing. In chemical mechanical polishing, a smooth polished surface can be obtained at high speed by the action of chemical components contained in the polishing liquid and the relative movement of the abrasive and the large substrate 10x. More specifically, in a polishing apparatus, polishing is performed while relatively rotating a surface plate on which a polishing cloth (pad) made of nonwoven fabric, polyurethane foam, porous fluororesin, or the like is attached and a holder for holding a large substrate 10x. To do. At that time, for example, an abrasive containing cerium oxide particles having an average particle diameter of 0.01 to 20 μm, an acrylate derivative as a dispersant, and water is supplied between the polishing cloth and the large substrate 10x.

  Next, in the film thickness measurement step shown in FIG. 7E, the film thickness of the light-transmitting film overlapping the monitor reflection pattern 7z on the upper layer side is measured by a beam profile reflectance measurement method. More specifically, as indicated by an arrow L2, a light-transmitting film (interlayer insulating film) that overlaps the monitor reflective pattern 7z on the upper layer side based on the reflected light when the monitor reflective pattern 7z is irradiated with light. 45, the thickness of the first light-transmitting film 181 and the third light-transmitting film 17) is measured.

  Next, in the film removal step shown in FIG. 7F, based on the removal amount (etching amount) set from the film thickness measurement result measured in the film thickness measurement step, the interlayer insulating film 45 and the first light transmission film 181 are obtained. Then, the second light-transmitting film 182 and the third light-transmitting film 17 are etched to form a contact hole 17s reaching the wiring 7s (etching process).

  Next, an ITO film is formed on the third light transmissive film 17 by sputtering or the like and then patterned to form a terminal electrode 102 on the third light transmissive film 17 as shown in FIG.

  Thereafter, the alignment film 16 is formed only in the image display region 10a using mask vapor deposition or the like. As a result, the large substrate 10x is completed. Thereafter, as described with reference to FIG. 2 and the like, after the large substrate 10x and the counter substrate 20 are bonded together with the sealing material 107, liquid crystal is injected from the liquid crystal injection port 107c of the sealing material 107 in a reduced pressure atmosphere. Thereafter, the liquid crystal injection port 107 c of the sealing material 107 is sealed with the sealing material 108. When the large substrate 10x is cut into the single-size element substrate 10, the single-size liquid crystal panel 100p described with reference to FIG. 2 and the like can be obtained.

(Main effects of this form)
As described above, in the method of manufacturing the electro-optical device 100 and the element substrate 10 (large substrate 10x) of this embodiment, the same layer as the pixel electrode 9a or the lower layer side of the pixel electrode 9a is formed on one surface of the large substrate 10x. The monitor reflective patterns 7z and 9z are formed, and the first light transmissive film 181 and the second light transmissive film 182 are formed on the pixel electrode 9a and the monitor reflective patterns 7z and 9z. Further, the third light-transmitting film 17 is formed after removing the portions of the second light-transmitting film 182 that overlap the monitor reflection patterns 7z and 9z. For this reason, when the reflective pattern 9z for monitoring is irradiated with light and the film thickness is measured based on the detection result of the reflected light, the first light-transmitting film 181 having the same refractive index and the upper layer of the reflective pattern 9z for monitoring are provided. The third light transmissive film 17 overlaps, and there is no second light transmissive film 182 having a different refractive index. In addition, when the reflective pattern for monitoring 7z is irradiated with light and the film thickness is measured based on the detection result of the reflected light, the interlayer insulating film 45 having the same refractive index and the first transparent film are formed on the reflective pattern for monitoring 7z. The optical film 181 and the third transparent film 17 are overlapped, and the second transparent film 182 having a different refractive index does not exist. For this reason, the measurement result of the film thickness is not affected by the dielectric multilayer film (the reflective reflection film 18). Therefore, since the film thickness of the third light-transmitting film 17 and the like can be measured accurately, the polishing amount and the etching amount can be appropriately set based on the film thickness measurement result.

  In particular, in the present embodiment, since the first light-transmitting film 181, the second light-transmitting film 182 and the third light-transmitting film 17 constitute the enhanced reflection film 18, the thickness of the third light-transmitting film 17 is accurately set. Therefore, it is necessary to accurately control the thickness of the third light-transmitting film 17 after polishing. Here, the sum of the film thickness of the first light transmissive film 181 and the film thickness of the third light transmissive film 17 can be measured accurately, and the film thickness of the first light transmissive film 181 is thin. Accordingly, since the film thickness of the third light transmissive film 17 can be accurately grasped, the polishing amount for the third light transmissive film 17 can be set appropriately. Therefore, the film thickness of the third light-transmitting film 17 after polishing can be accurately controlled.

  The reflective pattern for monitoring 9z used when measuring the film thickness for obtaining the polishing amount (removal amount) on the upper layer side of the pixel electrode 9a is the same layer as the pixel electrode 9a, and the third light-transmitting pattern is used. Except for the film 17, only the first light-transmitting film 181 overlaps the monitor reflection pattern 9z on the upper layer side. For this reason, since the film thickness of the 3rd translucent film | membrane 17 can be grasped | ascertained correctly, the grinding | polishing amount (removal amount) in the upper layer side of the pixel electrode 9a can be set correctly.

  The monitor reflection pattern 7z used when measuring the film thickness for obtaining the etching amount (removal amount) on the upper layer side of the wiring 7s is the same layer as the wiring 7s, and the second light transmitting film 182 is used. Other than the above, only the light-transmitting films (interlayer insulating film 45, first light-transmitting film 181 and third light-transmitting film 17) to be etched overlap with the monitor reflection pattern 7z on the upper layer side. For this reason, since the film thickness of the translucent film | membrane used as an etching object can be grasped | ascertained correctly, the etching amount (removal amount) in the upper layer side of wiring 7s can be set correctly.

  In the second light transmissive film removing step, it is preferable that at least part of the first light transmissive film 181 is also removed. According to such a configuration, the second light transmissive film can be reliably removed. Therefore, when measuring the film thickness of the third light-transmitting film 17 and the like, the influence of the second light-transmitting film 182 can be surely eliminated.

[Embodiment 2]
FIG. 8 is an explanatory diagram illustrating the configuration of the terminal electrode 102 and the like of the electro-optical device 100 according to the second embodiment of the present invention in comparison with the configuration of the pixel 100a. 8, (a1) and (a2) are an explanatory diagram schematically showing a planar configuration of the pixel 100a and an explanatory diagram schematically showing a cross-sectional configuration of the pixel 100a. (B2) is a plan view of the terminal electrode 102 and a cross-sectional view when the element substrate 10 is cut at a position corresponding to the line PP ′. 8C1 and 8C2 are a plan view of the reflection pattern for monitoring and a cross-sectional view when the element substrate 10 is cut at a position corresponding to the line MM ′. Since the basic configuration of this embodiment is the same as that of Embodiment 1, common portions are denoted by the same reference numerals and description thereof is omitted.

  In the first embodiment, the monitor reflection pattern 9z is formed in the same layer as the pixel electrode 9a (reflection layer), and the monitor reflection pattern 7z is formed in the same layer as the wiring 7s. As described above, the monitor reflection pattern 9z may be formed on the lower layer side of the pixel electrode 9a (reflection layer), and the monitor reflection pattern 7z may be formed on the lower layer side of the wiring 7s. For example, in the configuration example shown in FIG. 8, the monitor reflection patterns 7z and 9z are formed in the same layer as the relay electrode 6b. Even in such a configuration, it is the silicon oxide film that is interposed between the monitor reflective patterns 7z and 9z and the pixel electrode 9a (reflective layer), like the first light-transmitting film 181 and the third light-transmitting film 17. Interlayer insulating films 44 and 45 to be formed. For this reason, the translucent film overlapping the monitor reflection patterns 7z and 9z on the upper layer side is entirely made of a silicon oxide film. Therefore, it is possible to accurately measure the film thickness of the translucent film overlapping the monitor reflection patterns 7z and 9z on the upper layer side by the beam profile reflectance measurement method.

[Other embodiments]
In the above-described embodiment, when the reflective reflection film 18 is formed, a silicon oxide film is used as the low refractive index layer, and a silicon nitride film is used as the high refractive index layer. However, if a refractive index of less than 1.7 is defined as a low refractive index layer and a refractive index of 1.7 or more is defined as a high refractive index layer, the low refractive index layer and the high refractive index layer are as follows: Material Low Refractive Index Layer Magnesium Fluoride (MgF ₂ ) / Refractive Index = 1.38
Aluminum oxide (Al ₂ O ₃ ) / refractive index = 1.62
High refractive index layer Titanium oxide film (TiO ₂ ) / refractive index = 2.10
Tantalum oxide film (Ta ₂ O ₅ ) / refractive index = 2.10
May be used.

  In the above embodiment, the liquid crystal device has been mainly described as the electro-optical device 100. However, in the electro-optical device such as an organic electroluminescence device, a plasma display device, and an electrophoretic display device, the upper layer side of the reflective layer such as the pixel electrode 9a. The present invention may be applied when forming a dielectric multilayer film.

[Example of mounting on electronic devices]
(Configuration example of projection display device and optical unit)
FIG. 9 is a schematic configuration diagram of a projection display device and an optical unit to which the present invention is applied. A projection type display apparatus 1000 shown in FIG. 9 separates a light source unit 1021 that generates light source light and the light source light emitted from the light source unit 1021 into three color lights of red light R, green light G, and blue light B. A color separation light guide optical system 1023, and a light modulation unit 1025 illuminated by the light source light of each color emitted from the color separation light guide optical system 1023. Further, the projection display apparatus 1000 uses a cross dichroic prism 1027 (combining optical system) that synthesizes the image light of each color emitted from the light modulation unit 1025 and the image light that has passed through the cross dichroic prism 1027 on a screen (not shown). A projection optical system 1029 for projecting.

  In the projection display apparatus 1000, the light source unit 1021 includes a light source 1021a, a pair of fly-eye optical systems 1021d and 1021e, a polarization conversion member 1021g, and a superimposing lens 1021i. In the present embodiment, the light source unit 1021 includes a reflector 1021f having a paraboloid and emits parallel light. The fly-eye optical systems 1021d and 1021e are composed of a plurality of element lenses arranged in a matrix in a plane orthogonal to the system optical axis, and the light source light is divided and condensed and diverged individually by these element lenses. The polarization conversion member 1021g converts the light source light emitted from the fly-eye optical system 1021e into, for example, only a p-polarized component parallel to the drawing, and supplies it to the optical path downstream optical system. The superimposing lens 1021i allows the plurality of electro-optical devices 100 provided in the light modulation unit 1025 to be uniformly superimposed and illuminated by appropriately converging the light source light that has passed through the polarization conversion member 1021g as a whole.

  The color separation light guide optical system 1023 includes a cross dichroic mirror 1023a, a dichroic mirror 1023b, and reflection mirrors 1023j and 1023k. In the color separation light guide optical system 1023, the substantially white light source light from the light source unit 1021 enters the cross dichroic mirror 1023a. The red light R reflected by one of the first dichroic mirrors 1031a constituting the cross dichroic mirror 1023a is reflected by the reflecting mirror 1023j, passes through the dichroic mirror 1023b, and transmits the incident side polarizing plate 1037r and p-polarized light. The light enters the electro-optical device 100 (red liquid crystal panel 100R) as p-polarized light through the wire grid polarizer 1032r that reflects s-polarized light and the optical compensation plate 1039r.

  Further, the green light G reflected by the first dichroic mirror 1031a is reflected by the reflecting mirror 1023j and then also reflected by the dichroic mirror 1023b to transmit the incident side polarizing plate 1037g and p-polarized light while reflecting s-polarized light. The light is incident on the electro-optical device 100 (green liquid crystal panel 100G) as p-polarized light via the wire grid polarizing plate 1032g and the optical compensation plate 1039g.

  On the other hand, the blue light B reflected by the other second dichroic mirror 1031b constituting the cross dichroic mirror 1023a is reflected by the reflection mirror 1023k and transmits the incident-side polarizing plate 1037b, p-polarized light, while s The light enters the electro-optical device 100 (blue liquid crystal panel 100B) as p-polarized light through the wire grid polarizing plate 1032b that reflects the polarized light and the optical compensation plate 1039b. The optical compensation plates 1039r, 1039g, and 1039b optically compensate for the characteristics of the liquid crystal layer by adjusting the polarization state of the incident light and the emitted light to the electro-optical device 100.

  In the projection display apparatus 1000 configured as described above, the three colors of light incident through the optical compensation plates 1039r, 1039g, and 1039b are modulated by the electro-optical devices 100, respectively. At this time, of the modulated light emitted from the electro-optical device 100, the s-polarized component light is reflected by the wire grid polarizers 1032r, 1032g, and 1032b, and cross-dichroic via the exit-side polarizers 1038r, 1038g, and 1038b. Incident on the prism 1027. The cross dichroic prism 1027 is formed with a first dielectric multilayer film 1027a and a second dielectric multilayer film 1027b that intersect in an X shape, and the first dielectric multilayer film 1027a reflects the red light R. The other second dielectric multilayer film 1027b reflects the blue light B. Therefore, the three colors of light are combined by the cross dichroic prism 1027 and emitted to the projection optical system 1029. The projection optical system 1029 projects the color image light combined by the cross dichroic prism 1027 onto a screen (not shown) at a desired magnification.

(Other projection display devices)
In addition, about a projection type display apparatus, you may comprise the LED light source etc. which radiate | emit the light of each color as a light source part, and supply each color light radiate | emitted from this LED light source to another liquid crystal device. .

(Other electronic devices)
As for the electro-optical device 100 to which the present invention is applied, in addition to the electronic devices described above, mobile phones, personal digital assistants (PDAs), digital cameras, liquid crystal televisions, car navigation devices, video phones, POS terminals In addition, it may be used as a direct-view display device in an electronic device such as a device provided with a touch panel.

7s .. Wiring (conductive layer), 7z, 9z .. Reflection pattern for monitor, 9a .. Pixel electrode (reflection layer), 10. .. Element substrate (substrate for electro-optical device), 10a .. Image display area, 10x ..Large-sized substrate (electro-optical device substrate), 16 .... Orientation film, 17..Third transparent film, 18..Increase reflection film, 20..Counter substrate, 21..Common electrode, 45s..Contact Hole, 50 ... liquid crystal layer, 100 ... electro-optical device, 102 ... terminal electrode, 181 ... first translucent film, 182 ... second translucent film

Claims (7)

A reflective layer is formed in the image display area on one side of the substrate, and the same layer as the reflective layer is provided between the edge of the substrate and the image display area, or a monitor layer below the reflective layer. Create a reflection pattern,
A first light transmissive film forming step of forming a first light transmissive film having a first refractive index on an upper layer side of the reflective layer and the monitor reflective pattern;
A second light transmissive film forming step of forming a second light transmissive film having a second refractive index different from the first refractive index on the first light transmissive film;
A second light transmissive film removing step of removing a portion of the second light transmissive film overlapping the reflection pattern for monitoring;
A third light transmissive film forming step of forming a third light transmissive film having the first refractive index on an upper layer side of the reflective layer and the monitor reflective pattern;
Based on the reflected light when irradiating the monitor reflection pattern with light, a film thickness measurement step for measuring the film thickness of the light-transmitting film overlapping the upper layer side of the monitor reflection pattern;
A film removal step of removing the film from the surface side of the third light-transmitting film based on the removal amount set from the film thickness measurement result measured in the film thickness measurement step;
Have
The method for manufacturing a substrate for an electro-optical device, wherein the first light-transmitting film, the second light-transmitting film, and the third light-transmitting film constitute an increased reflection film.   2. The method of manufacturing a substrate for an electro-optical device according to claim 1, wherein at least a part of the first light-transmitting film is removed in the second light-transmitting film removing step. The reflective layer is a reflective pixel electrode,
3. The electro-optical device substrate according to claim 1, wherein in the film removal step, a polishing step is performed in which the third light-transmitting film is polished to flatten the surface of the third light-transmitting film. Manufacturing method. 4. The method of manufacturing a substrate for an electro-optical device according to claim 3 , wherein the reflection pattern for monitoring is formed in the same layer as the pixel electrode. Forming the reflective pattern for monitoring on the lower layer side from the pixel electrode;
4. The method of manufacturing a substrate for an electro-optical device according to claim 3 , wherein an interlayer insulating film having the first refractive index is provided between the reflection pattern for monitoring and the pixel electrode. Forming a conductive layer on one side of the substrate before the first light-transmitting film forming step;
In the film removal step, an etching step is performed to form a contact hole reaching the conductive layer from the surface side of the third light-transmitting film,
3. The electro-optical device substrate according to claim 1, wherein after the etching step, a terminal electrode that is electrically connected to the conductive layer through the contact hole is formed on the third light-transmitting film. Production method. Of one side of the substrate, a reflective layer formed in the image display area;
Of the one surface side of the substrate, between the edge of the substrate and the image display region, the reflective layer for the monitor provided on the substrate side from the same layer as the reflective layer or the reflective layer;
A first light-transmitting film provided on the opposite side of the substrate to the reflective layer and the reflective pattern for monitoring, and having a first refractive index;
A second light-transmitting layer that is provided on the opposite side of the first light-transmitting film from the substrate and overlaps the reflective layer and does not overlap the monitor reflection pattern and has a second refractive index different from the first refractive index. A membrane,
A third light-transmitting film provided on the side opposite to the substrate of the second light-transmitting film so as to overlap the reflective layer and the reflective pattern for monitoring, and having the first refractive index;
Have
The substrate for an electro-optical device, wherein the first light-transmitting film, the second light-transmitting film, and the third light-transmitting film constitute an increased reflection film.