JP5735611B2 - SiC semiconductor device - Google Patents

Description

  The present invention relates to a SiC semiconductor device.

SiC (silicon carbide: silicon carbide) semiconductors that can achieve higher breakdown voltage, higher current, lower on-resistance, and the like than Si semiconductors have attracted attention.
Various power devices (diodes, MISFETs, etc.) employing SiC are mainly used in systems in various power electronics fields such as motor control systems and power conversion systems.

However, even a high breakdown voltage SiC power device may break down during use. Therefore, in recent years, various countermeasures against breakdown voltage of SiC power devices have been proposed.
For example, in a SiC Schottky barrier diode having an n-type SiC semiconductor layer and a Schottky electrode bonded to the SiC semiconductor layer, the p-type is formed on the SiC semiconductor layer so as to be in contact with the terminal portion of the Schottky electrode. A structure in which a guard ring is formed has been proposed (see, for example, Patent Document 1). Thereby, a depletion layer due to the pn junction spreads in the vicinity of the termination part of the Schottky electrode, and the electric field concentration on the termination part of the Schottky electrode is alleviated.

JP 2008-53418 A

However, even if the withstand voltage countermeasure by the structure disclosed in Patent Document 1 is taken, there is a problem that when the avalanche breakdown of the device occurs, current concentration occurs in the terminal portion of the Schottky electrode and the device is destroyed.
An object of the present invention is to provide a SiC semiconductor device that can alleviate current concentration at the time of avalanche breakdown and improve both breakdown voltage and avalanche resistance.

The invention of claim 1, wherein in order to achieve the above object, the SiC semiconductor layer of a first conductivity type, an active region formed in said central portion of the surface of the SiC semiconductor layer, wherein the surface of the SiC semiconductor layer A field insulating film formed to surround an active region and having an opening exposing the surface of the SiC semiconductor layer; an electrode bonded to the SiC semiconductor layer through the opening of the field insulating film; and the SiC A second-conductivity-type guard ring formed on a surface layer portion of the semiconductor layer and in contact with a terminal portion of a junction portion of the electrode with the SiC semiconductor layer; and in a direction along the surface of the SiC semiconductor layer in the guard ring. A first conductivity type region and a second conductivity type region formed adjacent to each other, wherein the first conductivity type region is located before a joint portion of the electrode with the guard ring. The guard ring has a depth of 2000 mm or more, and the second portion of the guard ring from the surface of the SiC semiconductor layer to a depth position of 1000 mm is disposed. The SiC semiconductor device has a conductivity type impurity concentration lower than a first conductivity type impurity concentration of the SiC semiconductor layer .

According to the configuration of this, through the opening of the field insulating film, electrodes are joined into SiC semiconductor layer. The surface layer portion of the first conductivity type SiC semiconductor layer is covered with the SiC semiconductor layer in the electrode. On the surface layer portion of the first conductivity type SiC semiconductor layer, a second conductivity type guard ring is formed so as to be in contact with a terminal end portion (outer edge portion of the electrode in the opening) of the electrode and the SiC semiconductor layer. ing. In the guard ring, a first conductivity type region and a second conductivity type region are formed adjacent to each other in a direction along the surface of the SiC semiconductor layer. The first conductivity type region is disposed closer to the active region than the junction of the electrode with the guard ring. The guard ring has a depth of 2000 mm or more. The second conductivity type impurity concentration in the portion from the surface of the SiC semiconductor layer to the depth of 1000 mm in the guard ring is smaller than the first conductivity type impurity concentration of the SiC semiconductor layer. That is, the portion of the guard ring from the surface of the SiC semiconductor layer to a depth of 1000 mm has a second conductivity type impurity concentration <the first conductivity type impurity concentration of the SiC semiconductor layer, and the surface layer portion is It shows the nature of the first conductivity type rather than the nature of the second conductivity type.

  As a result, when a current flows in the SiC semiconductor layer, the current density in the SiC semiconductor layer can be dispersed, or a portion with a relatively high current density can be dispersed from the terminal portion of the electrode along with the dispersion of the current density. Can also be shifted to the inner position. As a result, even if avalanche breakdown occurs, the current density toward the terminal end of the electrode can be reduced. Therefore, device destruction due to avalanche breakdown can be prevented.

In addition, since the depletion layer spreads near the terminal end of the electrode due to the pn junction between the SiC semiconductor layer and the guard ring, electric field concentration on the terminal end of the electrode can be suppressed by the depletion layer. Therefore, the breakdown voltage of the device can be improved.
The impurity concentration of the second conductivity type region in the guard ring may be higher than the second conductivity type impurity concentration of the guard ring.

Also, the electrode, as claimed in claim 3, may be formed so as to cover the periphery of said opening in said field insulating film.

According to a fourth aspect of the present invention, there is provided a first conductivity type SiC semiconductor layer, an active region formed in a central portion of the surface of the SiC semiconductor layer, the active region, and the first conductivity type. A source region; a body region of a second conductivity type in contact with the source region; a drift region of the first conductivity type in contact with the body region; and the body region through a gate insulating film; A MIS transistor structure having a gate electrode for forming a channel in the body region for flowing a current between the source region and a surface layer portion of the SiC semiconductor layer and surrounding the MIS transistor structure. A two-conductivity type guard ring and a hole formed on the surface of the SiC semiconductor layer and having an opening exposing the source region and the guard ring. A field insulating film, through the opening of said field insulating film, a source electrode joined to each of the source region and the guard ring, the guard in the ring, adjacent to each other in a direction along the surface of the SiC semiconductor layer and includes a first conductive type region and a second conductivity type region formed in said first conductivity type region is disposed in the active region side than the connecting portion between the guard ring in said source electrode The guard ring has a depth of 2000 mm or more, and the impurity concentration of the second conductivity type in a portion of the guard ring from the surface of the SiC semiconductor layer to a depth position of 1000 mm is the SiC. The SiC semiconductor device is smaller than the first conductivity type impurity concentration of the semiconductor layer .

According to the configuration of this, the SiC semiconductor layer of a first conductivity type, MIS consisting of SiC (Metal Insulator Semiconductor) transistor structure is formed, the second conductivity type guard ring so as to surround the MIS transistor structure Is formed.
Since the guard ring is formed around the MIS transistor structure (transistor element), a depletion layer spreads around the transistor element due to the pn junction between the SiC semiconductor layer and the guard ring. Thereby, the electric field strength on the element surface can be relaxed. Therefore, the breakdown voltage of the device can be improved.

  Further, a source electrode for operating the MIS transistor structure is joined not only to the source region but also to a guard ring surrounding the MIS transistor structure. Thus, when an avalanche breakdown occurs in the MIS transistor, the breakdown current can be bypassed so as to flow in the direction of the guard ring around the transistor. In that case, current concentration may occur in the terminal portion of the junction portion of the source electrode with the guard ring (the outer edge portion of the source electrode in the opening of the field insulating film), and the device may be destroyed.

However, in the present invention, the guard ring has a depth of 2000 mm or more, and the impurity concentration of the second conductivity type in the portion from the surface of the SiC semiconductor layer to the depth position of 1000 mm in the guard ring is the SiC semiconductor. smaller than the first conductivity type not pure concentration layer. That is, the portion of the guard ring from the surface of the SiC semiconductor layer to a depth of 1000 mm has a second conductivity type impurity concentration <the first conductivity type impurity concentration of the SiC semiconductor layer, and the surface layer portion is It shows the nature of the first conductivity type rather than the nature of the second conductivity type.
Thereby, at the time of avalanche breakdown, the current density in the vicinity of the guard ring can be dispersed, or along with the dispersion of the current density, the portion where the current density is relatively higher than the outer edge portion of the source electrode in the opening of the field insulating film. It can be shifted to the inner position. As a result, even if an avalanche breakdown occurs, the current density toward the outer edge of the junction with the guard ring in the source electrode can be reduced. Therefore, device destruction due to avalanche breakdown can be prevented.
The impurity concentration of the second conductivity type region in the guard ring may be higher than the second conductivity type impurity concentration of the guard ring.
According to a sixth aspect of the present invention, the guard ring is preferably formed by the same impurity implantation step as the step of forming the body region.
The body region includes a body contact region in contact with the source electrode, and the first conductivity type region is formed by the same impurity implantation step as the step of forming the source region. The second conductivity type region is preferably formed by the same impurity implantation step as the step of forming the body contact region.

1A and 1B are schematic views of a Schottky barrier diode according to a reference example of the present invention, in which FIG. 1A is a plan view and FIG. 1B is a cross-sectional view. FIG. 2 is a diagram showing profiles of n-type and p-type impurity concentrations in the guard ring of the reference example of the present invention (first example). FIG. 3 is a diagram showing profiles of n-type and p-type impurity concentrations in the guard ring of the reference example of the present invention (second example). FIG. 4 is a diagram showing profiles of n-type and p-type impurity concentrations in the guard ring ( third example). 5A and 5B are schematic views of a field effect transistor according to an embodiment of the present invention, in which FIG. 5A shows a plan view and FIG. 5B shows an internal enlarged view. FIG. 6 is a schematic cross-sectional view of a field effect transistor according to an embodiment of the present invention, and shows a cut surface taken along a cutting line VI-VI in FIG. 7A and 7B are schematic views of a heterojunction diode according to another reference example of the present invention, in which FIG. 7A is a plan view and FIG. 7B is a cross-sectional view. FIG. 8 is a distribution diagram of current density in the Schottky barrier diode of Example 1. FIG. 9 is a distribution diagram of current density in the Schottky barrier diode according to the second embodiment. 10 is a distribution diagram of current density in the Schottky barrier diode of Example 3. FIG. FIG. 11 is a distribution diagram of current density in the Schottky barrier diode of Comparative Example 1.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
1A and 1B are schematic views of a Schottky barrier diode according to a reference example of the present invention, in which FIG. 1A is a plan view and FIG. 1B is a cross-sectional view.
The Schottky barrier diode 1 is a Schottky barrier diode 1 employing SiC, and has, for example, a square chip shape in plan view as shown in FIG. The chip-like Schottky barrier diode 1 has a length of about several millimeters in the vertical and horizontal directions on the paper surface of FIG.

The Schottky barrier diode 1 includes an n ⁺ type SiC substrate 2 (for example, the concentration is 1 × 10 ¹⁸ to 1 × 10 ²¹ cm ⁻³ ). A cathode electrode 3 is formed on the back surface of the SiC substrate 2 so as to cover the entire area. The cathode electrode 3 is made of a metal (for example, Ni silicide, Co silicide, etc.) that is in ohmic contact with n-type SiC.
On the surface of SiC substrate 2, SiC epitaxial layer 4 (SiC semiconductor layer) having an n ⁻ type (for example, a concentration of 1 × 10 ¹⁵ to 1 × 10 ¹⁷ cm ⁻³ ) having a lower concentration than SiC substrate 2 is laminated. ing. The thickness of the SiC epitaxial layer 4 is, for example, 1 μm to 100 μm.

A field insulating film 5 made of silicon oxide (SiO ₂ ) is laminated on the surface of the SiC epitaxial layer 4. The thickness of the field insulating film 5 is, for example, 1000 mm or more, and preferably 3000 mm to 30000 mm. The field insulating film 5 may be made of another insulator such as silicon nitride (SiN).
The field insulating film 5 is formed with an opening 6 exposing the central portion of the SiC epitaxial layer 4. An anode electrode 7 is formed on the field insulating film 5.

  The anode electrode 7 fills the opening 6 of the field insulating film 5 and protrudes outward in a flange shape so as to cover the peripheral edge 8 of the opening 6 in the field insulating film 5 from above. That is, the peripheral edge 8 of the field insulating film 5 is sandwiched by the SiC epitaxial layer 4 and the anode electrode 7 from the upper and lower sides over the entire circumference. The protruding amount X of the anode electrode 7 covering the peripheral edge 8 of the field insulating film 5 from the end of the opening 6 of the field insulating film 5 is, for example, 10 μm or more, preferably 10 μm to 100 μm.

The anode electrode 7 includes, for example, a Schottky metal 9 as a barrier forming electrode joined to the SiC epitaxial layer 4 in the opening 6 of the field insulating film 5 and a contact metal 10 laminated on the Schottky metal 9. It has a layer structure.
Schottky metal 9 is made of a metal (for example, Ni, Au, etc.) that forms a Schottky junction by bonding with n-type SiC. Schottky metal 9 joined to SiC forms a Schottky barrier (potential barrier) having a height of 0.7 eV to 1.7 eV, for example, with the SiC semiconductor. Moreover, the thickness of the Schottky metal 9 is, for example, 0.01 μm to 5 μm in this reference example .

The contact metal 10 is a portion of the anode electrode 7 that is exposed on the outermost surface of the Schottky barrier diode 1 and to which a bonding wire or the like is bonded. The contact metal 10 is made of Al, for example. In this reference example , the thickness of the contact metal 10 is larger than that of the Schottky metal 9 and is, for example , 0.5 μm to 10 μm.
A surface protective film 11 is formed on the outermost surface of the Schottky barrier diode 1. An opening 12 for exposing the contact metal 10 is formed at the center of the surface protective film 11. A bonding wire or the like is bonded to the contact metal 10 through the opening 12.

  A p-type guard ring 13 is formed on the surface layer portion of the SiC epitaxial layer 4 so as to be in contact with the Schottky metal 9 of the anode electrode 7. The guard ring 13 is formed along the outline of the opening 6 so as to straddle the inside and outside of the opening 6 of the field insulating film 5 in plan view. Therefore, the guard ring 13 protrudes inward of the opening 6, protrudes outward of the opening 6, and the inner portion 15 in contact with the outer edge portion 14 as the terminal portion of the Schottky metal 9 in the opening 6. The outer peripheral portion 16 is opposed to the anode electrode 7 (Schottky metal 9). The width w1 of the inner portion 15 of the guard ring 13 is 1 μm to 50 μm, and the width w2 of the outer portion 16 of the guard ring 13 is 1 μm to 500 μm. The overall width W of the guard ring 13, which is the sum of w1 and w2, is, for example, 5 μm to 550 μm. The depth D of the guard ring 13 from the surface of the SiC epitaxial layer 4 is, for example, 1000 mm or more, and preferably 2000 mm to 7000 mm.

In most of the p-type guard ring 13, the p-type impurity concentration is higher than the n-type impurity concentration inherent in the n ⁻ -type SiC epitaxial layer 4. The p-type impurity concentration is smaller than the concentration. Hereinafter, an example will be described with reference to FIGS.
FIG. 2 is a diagram showing profiles of n-type and p-type impurity concentrations in the guard ring 13 of the reference example of the present invention (first example). FIG. 3 is a diagram showing profiles of n-type and p-type impurity concentrations in the guard ring 13 of the reference example of the present invention (second example). FIG. 4 is a diagram showing profiles of n-type and p-type impurity concentrations in the guard ring 13 ( third example).

Referring to FIG. 2, n ⁻ -type SiC epitaxial layer 4 contains n-type impurities (N (nitrogen), P (phosphorus), As (arsenic), etc.) at 1.0 × 10 ¹⁶ cm throughout the layer. It is contained almost uniformly at a concentration of ^-3 (epi concentration).
On the other hand, the p-type guard ring 13 contains p-type impurities (B (boron), Al (aluminum), etc.) in addition to the n-type impurities. The p-type impurity is not contained uniformly over the entire guard ring 13 but is contained so that the concentration increases as the depth from the surface of the SiC epitaxial layer 4 increases. Specifically, the p-type impurity is hardly contained in the guard ring 13 in the vicinity of the surface of the SiC epitaxial layer 4 (depth of about 0 to about 200 mm), and becomes a base at a depth position of about 200 to 1000 mm. It increases in a concentration range (1.0 × 10 ¹⁴ cm ^{−3 to} 1.0 × 10 ¹⁶ cm ⁻³ ) smaller than the concentration of the SiC epitaxial layer 4. Then, at a depth position of about 1000 mm, it substantially matches the concentration (1.0 × 10 ¹⁶ cm ⁻³ ) of the SiC epitaxial layer 4, and at a depth position of about 1000 mm to the deepest 4600 mm, the SiC epitaxial layer 4 It increases in a concentration range larger than the concentration (1.0 × 10 ¹⁶ cm ^{−3 to} 1.0 × 10 ²⁰ cm ⁻³ ). That is, in the example of FIG. 2, the depth of the guard ring 13 from the surface of the SiC epitaxial layer 4 to a depth d of 1000 mm or less (for example, 0 to 30% depth when the depth D of the guard ring 13 is 100). In the surface layer portion 17 at the position), the p-type impurity concentration is lower than the n-type impurity concentration.

Such a concentration profile is obtained, for example, with respect to the SiC epitaxial layer 4 containing n-type impurities at a substantially uniform concentration over the entire layer, from the surface (depth 0) to the depth position of 1000 mm. P-type impurities are implanted so that density <donor density (for example, the dose is 1.0 × 10 ¹² cm ^{−2 to} 1.0 × 10 ¹⁵ cm ⁻² and the acceleration energy is 30 keV to 100 keV), and annealing is performed. This can be realized by activating p-type impurities by treatment.

  On the other hand, in the example of FIG. 3, unlike the example of FIG. 2, the p-type impurity increases in a concentration range larger than the concentration of the base SiC epitaxial layer 4 even at a depth of about 200 to 1000 mm. Yes. However, in the example of FIG. 3, in addition to the n-type impurities inherent to the SiC epitaxial layer 4 (n-type impurities contained when the SiC epitaxial layer 4 is formed) at a depth of about 200 to 600 mm, As indicated by a one-dot chain line, an n-type impurity is introduced. Thereby, in the depth position of about 200 to 600 mm, the n-type impurity of SiC epitaxial layer 4 is supplemented, and as a result, the p-type impurity concentration is lower than the n-type impurity concentration.

Such a concentration profile is obtained by, for example, implanting p-type impurities so that the acceptor density> the donor density is satisfied with respect to the SiC epitaxial layer 4 containing the n-type impurities at a substantially uniform concentration throughout the entire layer ( For example, the dose is 1.0 × 10 ¹⁴ cm ^{−2 to} 1.0 × 10 ¹⁶ cm ⁻² , the acceleration energy is 80 keV to 400 keV), and an n-type impurity is implanted into the region into which the p-type impurity is implanted ( For example, the dose amount is 1.0 × 10 ¹² cm ^{−2 to} 1.0 × 10 ¹⁴ cm ⁻² , the acceleration energy is 30 keV to 100 keV), and then the n-type and p-type impurities are activated by annealing. Can be realized.

  As in the example of FIG. 4, in the case of a typical guard ring 13, as in FIG. 3, p-type impurities are also present in the base SiC epitaxial layer 4 even at a depth of about 200 to 1000 mm. It increases in a concentration range larger than the concentration. Moreover, in the example of FIG. 4, unlike the example of FIG. 3, there is no additional implantation of n-type impurities. Therefore, in the example of FIG. 4, the p-type impurity concentration is higher than the n-type impurity concentration in almost the entire region of the guard ring 13 at a depth of about 200 to 4600 cm.

As described above, according to the Schottky barrier diode 1, the guard ring 13 is formed so as to straddle the inside and outside of the opening 6 of the field insulating film 5, and the inner portion 15 of the guard ring 13 corresponds to the opening 6. It is in contact with the outer edge portion 14 of the inner Schottky metal 9.
Then, in the guard ring 13, as shown in the examples shown in FIGS. 2 and 3, from the surface of the SiC epitaxial layer 4 to a depth d of 1000 mm or less (when the depth D of the guard ring 13 is 100, In the surface layer portion 17 at a depth position of 30%, the p-type impurity concentration is lower than the n-type impurity concentration. That is, in the surface layer portion 17 of the guard ring 13, the p-type impurity concentration is smaller than the n-type impurity concentration, and the surface layer portion 17 exhibits n-type properties rather than p-type properties.

  Thereby, when a current flows in the SiC epitaxial layer 4 of the Schottky barrier diode 1, the current density in the SiC epitaxial layer 4 can be dispersed, or the current density is relatively high along with the dispersion of the current density. The portion can be shifted to the central portion of the anode electrode 7. As a result, for example, even when a large reverse voltage is applied between the anode electrode 7 and the cathode electrode 3 and avalanche breakdown occurs, the current density toward the outer edge portion 14 of the anode electrode 7 (Schottky metal 9) is reduced. Can do. Therefore, device destruction due to avalanche breakdown can be prevented.

In addition, since a depletion layer spreads in the vicinity of the outer edge portion 14 of the anode electrode 7 due to the pn junction between the SiC epitaxial layer 4 and the guard ring 13, electric field concentration on the outer edge portion 14 of the anode electrode 7 is suppressed by the depletion layer. Can do. Therefore, the breakdown voltage of the device can be improved.
5A and 5B are schematic views of a field effect transistor according to an embodiment of the present invention, in which FIG. 5A shows a plan view and FIG. 5B shows an internal enlarged view. FIG. 6 is a schematic cross-sectional view of a field effect transistor according to an embodiment of the present invention, and shows a cut surface taken along a cutting line VI-VI in FIG.

The field effect transistor 21 is a DMISFET (Double diffused Metal Insulator Semiconductor Field Effect Transistor) employing SiC, and has a square chip shape in plan view as shown in FIG. 5A, for example. The chip-like field effect transistor 21 has a length of about several millimeters in the vertical and horizontal directions on the paper surface of FIG.
A source pad 22 is formed on the surface of the field effect transistor 21. The source pad 22 has a substantially square shape in plan view with four corners curved outward, and is formed so as to cover almost the entire surface of the field effect transistor 21. The source pad 22 has a removal region 23 near the center of one side. The removal region 23 is a region where the source pad 22 is not formed.

A gate pad 24 is disposed in the removal region 23. A gap is provided between the gate pad 24 and the source pad 22, and these are insulated from each other.
Next, the internal structure of the field effect transistor 21 will be described.
The field effect transistor 21 includes an n ⁺ type SiC substrate 25 (for example, a concentration of 1 × 10 ¹⁸ to 1 × 10 ²¹ cm ⁻³ ).

A SiC epitaxial layer 26 (SiC semiconductor layer) having an n ⁻ type (for example, a concentration of 1 × 10 ¹⁵ to 1 × 10 ¹⁷ cm ⁻³ ) having a concentration lower than that of the SiC substrate 25 is laminated on the surface of the SiC substrate 25. ing. The thickness of the SiC epitaxial layer 26 is, for example, 1 μm to 100 μm.
As shown in FIG. 5A, the field effect transistor 21 is formed with an active region 27 that is disposed in the center of the SiC epitaxial layer 26 in plan view and functions as the field effect transistor 21.

In the active region 27, a large number of p-type body regions 28 are formed in a matrix (matrix shape) at a constant pitch in the row direction and the column direction in the surface layer portion of the SiC epitaxial layer 26. Each body region 28 has a square shape in plan view. For example, the length in the vertical and horizontal directions on the paper surface of FIG. 5B is about 7.2 μm. Moreover, the impurity concentration of the body region 28 is, for example, 1.0 × 10 ¹⁶ cm ^{−3 to} 1.0 × 10 ¹⁹ cm ⁻³ . On the other hand, the region on the SiC substrate 25 side of the body region 28 in the SiC epitaxial layer 26 is an n ⁻ type drift region 29 in which the state after the epitaxial growth is maintained.

Each body region 28 has a p ⁺ -type body contact region 30 (for example, an impurity concentration of 1.0 × 10 ¹⁸ cm ^{−3 to} 2.0 × 10 ²¹ cm ⁻³ ) formed at the center thereof. An n ⁺ type source region 31 (for example, an impurity concentration of 1.0 × 10 ¹⁸ cm ^{−3 to} 1.0 × 10 ²¹ cm ⁻³ ) is formed so as to surround the body contact region 30. The body contact region 30 has a square shape in plan view, and for example, the length in the vertical and horizontal directions on the paper surface of FIG. 5B is about 1.6 μm.

The source region 31 has a square ring shape in plan view, and has, for example, lengths of about 5.7 μm in the vertical and horizontal directions on the paper surface of FIG.
In the active region 27, the region between the body regions 28 arranged in a matrix at a constant pitch (the inter-body region 32 sandwiched between the side surfaces of the adjacent body regions 28) is constant (for example, 2.8 μm). ) A grid having a width.

On the inter-body region 32, a lattice-like gate insulating film 33 is formed along the inter-body region 32. The gate insulating film 33 straddles between adjacent body regions 28 and covers a portion (a peripheral portion of the body region 28) surrounding the source region 31 in the body region 28 and an outer peripheral edge of the source region 31. The gate insulating film 33 is made of silicon oxide (SiO ₂ ) and has a thickness of about 400 mm and is almost uniform.

  A gate electrode 34 is formed on the gate insulating film 33. The gate electrode 34 is formed in a lattice shape along the lattice-shaped gate insulating film 33, and faces the peripheral portion of each body region 28 with the gate insulating film 33 interposed therebetween. The gate electrode 34 is made of polysilicon and, for example, p-type impurities are introduced at a high concentration. The thickness of the gate electrode 34 is, for example, about 6000 mm.

  In the field effect transistor 21, a boundary between unit cells is set in the center in the width direction of the inter-body region 32. Each unit cell has, for example, a length of about 10 μm in the vertical and horizontal directions on the paper surface of FIG. In each unit cell, the depth direction of the body region 28 is the gate length direction, and the circumferential direction of the body region 28 perpendicular to the gate length direction is the gate width direction. In each unit cell, by controlling the voltage applied to the gate electrode 34, an annular channel is formed in the peripheral portion of the body region 28 of each unit cell. A drain current flowing along the side surface toward the surface side of the SiC epitaxial layer 26 can be passed through the source region 31. That is, a MIS transistor structure is configured for each unit cell.

  In the surface layer portion of the SiC epitaxial layer 26, a plurality of p-type guard rings 35 are spaced apart from the active region 27 so as to surround the unit cells (active region 27) arranged in a matrix (this implementation). In the form, five are formed. These guard rings 35 can be formed by the same ion implantation step as the step of forming the p-type body region 28.

Each guard ring 35 is formed in a square shape in plan view along the outer periphery of the field effect transistor 21 in plan view. The depth D of the guard ring 35 from the surface of the SiC epitaxial layer 26 is substantially the same as that of the body region 28, and is, for example, 2000 mm or more, preferably 3000 mm to 10,000 mm.
Among the plurality of guard rings 35, an n ⁺ type region 38 and a p ⁺ type region 39 are formed adjacent to each other in the innermost guard ring 36 (overall width w3). These n ⁺ -type region 38 and p ⁺ -type region 39 are formed in a square ring shape in plan view over the entire circumference of the guard ring 36. The n ⁺ type region 38 is the same ion implantation step as the step of forming the n ⁺ type source region 31, and the p ⁺ type region 39 is the same ion implantation step as the step of forming the p ⁺ type body contact region 30. Can be formed respectively. The overall width w4 of the guard rings 37 other than the innermost guard ring 36 is, for example, 1 μm to 3 μm.

Also in the implementation form of this, p-type guard ring 35 is at its most, n ^- is large p-type impurity concentration than the n-type impurity concentration of the SiC epitaxial layer 26 has the inherent type, above As shown in FIGS. 2 to 4 of the reference example , in the surface layer portion 40, the p-type impurity concentration is lower than the n-type impurity concentration. In particular, since the p ⁺ -type region is formed in the surface layer portion 40 of the innermost guard ring 36, the n-type impurity is additionally implanted as shown in the example of FIG. It is preferable to supplement the n-type impurity.

An interlayer insulating film 41 as a field insulating film made of silicon oxide (SiO ₂ ) is laminated on the SiC epitaxial layer 26 so as to cover the gate electrode 34. In the interlayer insulating film 41, a contact hole 42 exposing the source region 31 and the body contact region 30 and a contact hole 43 exposing the innermost guard ring 36 are formed.

A source electrode 44 is formed on the interlayer insulating film 41. The source electrode 44 is collectively in contact with the body contact region 30 and the source region 31 of all the unit cells and the p ⁺ type region 39 of the innermost guard ring 36 through the contact holes 42 and 43. . That is, the source electrode 44 is a wiring common to all unit cells. An interlayer insulating film (not shown) is formed on the source electrode 44, and the source electrode 44 is connected to the source pad 22 (see FIG. 5A) via the interlayer insulating film (not shown). ) Is electrically connected. On the other hand, the gate pad 24 (see FIG. 5A) is electrically connected to the gate electrode 34 through a gate wiring (not shown) routed on the interlayer insulating film (not shown). ing.

The source electrode 44 has a structure in which a Ti / TiN layer 45 and an Al layer 46 are laminated in order from the contact side with the SiC epitaxial layer 26.
A drain electrode 47 is formed on the back surface of the SiC substrate 25 so as to cover the entire area. The drain electrode 47 is a common electrode for all unit cells. As the drain electrode 47, for example, a laminated structure (Ti / Ni / Au / Ag) in which Ti, Ni, Au, and Ag are laminated in this order from the SiC substrate 25 side can be applied.

  As described above, in this field effect transistor 21, since the guard ring 35 is formed around the matrix unit cell, the active region 27 is surrounded by the pn junction between the SiC epitaxial layer 26 and the guard ring 35. The depletion layer spreads. Thereby, the electric field strength on the element surface of each unit cell can be relaxed. Therefore, the breakdown voltage of the device can be improved.

  A source electrode 44 for operating each unit cell is joined not only to the source region 31 and the body contact region 30 but also to the innermost guard ring 36 surrounding the active region 27. As a result, when an avalanche breakdown occurs in the field effect transistor 21, the breakdown current can be bypassed so as to flow toward the innermost guard ring 36 around the active region 27. In that case, current concentration may occur in the outer edge portion of the source electrode 44 in the contact hole 43 of the interlayer insulating film 41, and the device may be destroyed.

  However, in this embodiment, the guard ring 35 has a depth d of 1000 mm or less from the surface of the SiC epitaxial layer 26 (0 to 5% depth position when the depth D of the guard ring 35 is 100). In the surface layer portion 40, the p-type impurity concentration is lower than the n-type impurity concentration. That is, in the surface layer portion 40 of the guard ring 35, the p-type impurity concentration is smaller than the n-type impurity concentration, and the surface layer portion 40 exhibits an n-type property rather than a p-type property.

  As a result, when a current flows in the SiC epitaxial layer 26 of the field effect transistor 21, the current density in the vicinity of the wide guard ring 36 can be dispersed, or the current density is dispersed and the current density is relatively high. Can be shifted to the center of the source electrode 44 in the contact hole 43. As a result, for example, even if a large reverse voltage is applied between the source and the drain and an avalanche breakdown occurs, the density of the current toward the outer edge of the source electrode 44 can be reduced. Therefore, device destruction due to avalanche breakdown can be prevented.

As mentioned above, although embodiment and the reference example of this invention were described, this invention can also be implemented with another form.
For example, in the Schottky barrier diode 1 of the reference example, the polysilicon 52 is replaced with the SiC epitaxial layer 4 by replacing the Schottky metal 9 with the polysilicon 52 as shown in FIGS. Thus, the heterojunction diode 51 heterojunctioned can be formed. The polysilicon 52 bonded to the SiC forms a potential barrier with a height of 0.5 eV to 1.8 eV, for example, with the SiC semiconductor.

  Further, a configuration in which the conductivity type of each semiconductor portion of the Schottky barrier diode 1, the field effect transistor 21, and the heterojunction diode 51 is inverted may be employed. That is, in the Schottky barrier diode 1, the field effect transistor 21, and the heterojunction diode 51, the p-type portion may be n-type and the n-type portion may be p-type.

The SiC semiconductor device of the present invention is mainly used in systems in various power electronics fields such as motor control systems and power conversion systems. Specifically, it is used by being incorporated into an inverter circuit for an automobile, an IPM (Intelligent Power Module) or the like.
In addition, various design changes can be made within the scope of the matters described in the claims.

Next, although this invention is demonstrated based on an Example and a comparative example, this invention is not limited by the following Example.
The following Examples 1 to 3 and Comparative Example 1 were carried out to prove the current density dispersion effect according to the present invention.
<Example 1>
(1) Production of Schottky Barrier Diode A Schottky barrier diode having a structure substantially equivalent to the Schottky barrier diode described with reference to FIGS.

Specifically, first, an epitaxial layer made of n ⁻ -type SiC was grown on an n ⁺ -type SiC substrate (n-type impurity concentration: 1 × 10 ¹⁶ cm ⁻³ ). P was used as the n-type impurity.
Next, a p-type impurity (B) was implanted into the epitaxial layer at a dose of 1.5 × 10 ¹¹ cm ⁻² and an acceleration energy of 30 keV. Subsequently, an n-type impurity (P) was implanted at a dose of 3.0 × 10 ¹⁵ cm ⁻² and an acceleration energy of 180 keV. Next, annealing was performed at 1150 ° C. to activate n-type and p-type impurities. As a result, a guard ring having a depth of 4500 mm was selectively formed.

Thereafter, a field insulating film made of SiO ₂ was formed on the epitaxial layer. An opening was formed in the field insulating film so that a part of the guard ring was exposed. Next, Schottky metal (Mo) was bonded to the epitaxial layer so as to be in contact with the guard ring through the opening of the field insulating film.
<Example 2>
A Schottky barrier diode was fabricated in the same manner as in Example 1 except that the dose amount and acceleration energy of the n-type impurity were set to 3.0 × 10 ¹¹ cm ⁻² and 30 keV, respectively.
<Example 3>
A Schottky barrier diode was fabricated in the same manner as in Example 1 except that the dose amount and acceleration energy of the n-type impurity were 1.5 × 10 ¹² cm ⁻² and 30 keV, respectively.
<Comparative Example 1>
A Schottky barrier diode was fabricated in the same manner as in Example 1 except that n-type impurities were not implanted when forming the guard ring.
<Current density simulation>
The current density distribution in the epitaxial layer was simulated when a reverse voltage (760 V) was applied between the anode and the cathode of the Schottky barrier diode obtained in Examples 1 to 3 and Comparative Example 1. The results are shown in FIGS. 8 to 11, corresponding parts of the respective parts shown in FIGS. 1A and 1B are denoted by the same reference numerals.

As shown in FIG. 11, in the Schottky barrier diode of Comparative Example 1, it was confirmed that a large current concentratedly flows on the outer edge of the Schottky metal.
On the other hand, as shown in FIG. 8, in the Schottky barrier diode of Example 1, it was confirmed that a large current was concentrated on the outer edge portion of the Schottky metal as compared with other portions. The magnitude of the current is not enough to cause device destruction. That is, it was confirmed that the current density toward the outer edge of the Schottky metal was relaxed.

  As shown in FIGS. 9 and 10, in the Schottky barrier diodes of Examples 2 and 3, the current density toward the outer edge of the Schottky metal is further relaxed and the current density is relatively low. It was confirmed that the high part shifted to the center part of the Schottky metal.

DESCRIPTION OF SYMBOLS 1 Schottky barrier diode 4 SiC epitaxial layer 9 Schottky metal 14 Outer edge part (of Schottky metal) 17 Surface layer part (of guard ring) 21 Field effect transistor 26 SiC epitaxial layer 28 Body region 29 Drift region 31 Source region 33 Gate insulation Film 34 Gate electrode 35 Guard ring 40 Surface layer part (of guard ring) 41 Interlayer insulating film 42 Contact hole 43 Contact hole 44 Source electrode 51 Heterojunction diode 52 Polysilicon

Claims (7)

A first conductivity type SiC semiconductor layer;
An active region formed at the center of the surface of the SiC semiconductor layer;
A field insulating film formed on the surface of the SiC semiconductor layer so as to surround the active region, and having an opening exposing the surface of the SiC semiconductor layer;
An electrode bonded to the SiC semiconductor layer through the opening of the field insulating film;
A second conductivity type guard ring formed on a surface layer portion of the SiC semiconductor layer and in contact with a terminal portion of a junction portion of the electrode with the SiC semiconductor layer;
The guard ring includes a first conductivity type region and a second conductivity type region formed adjacent to each other in a direction along the surface of the SiC semiconductor layer ,
The first conductivity type region is disposed closer to the active region than a joint portion of the electrode with the guard ring ,
The guard ring has a depth of 2000 mm or more,
The SiC semiconductor device, wherein an impurity concentration of the second conductivity type in a portion from the surface of the SiC semiconductor layer to a depth of 1000 mm in the guard ring is smaller than the first conductivity type impurity concentration of the SiC semiconductor layer . 2. The SiC semiconductor device according to claim 1 , wherein an impurity concentration of the second conductivity type region in the guard ring is higher than a second conductivity type impurity concentration of the guard ring . The electrodes, the field is formed so as to cover the peripheral edge of the opening in the insulating film, SiC semiconductor device according to any one of claims 1 or 2. A first conductivity type SiC semiconductor layer;
An active region formed at the center of the surface of the SiC semiconductor layer;
A source region of the first conductivity type; a body region of a second conductivity type in contact with the source region; a drift region of the first conductivity type in contact with the body region; and a gate insulating film formed in the active region. A MIS transistor structure having a gate electrode for forming a channel in the body region in order to flow a current between the drift region and the source region.
A guard ring of a second conductivity type formed in a surface layer portion of the SiC semiconductor layer and surrounding the MIS transistor structure;
A field insulating film formed on the surface of the SiC semiconductor layer and having an opening exposing the source region and the guard ring;
A source electrode joined to each of the source region and the guard ring via the opening of the field insulating film;
The guard ring includes a first conductivity type region and a second conductivity type region formed adjacent to each other in a direction along the surface of the SiC semiconductor layer,
The first conductivity type region is disposed closer to the active region than a joint portion of the source electrode with the guard ring,
The guard ring has a depth of 2000 mm or more,
The SiC semiconductor device, wherein an impurity concentration of the second conductivity type in a portion from the surface of the SiC semiconductor layer to a depth of 1000 mm in the guard ring is smaller than the first conductivity type impurity concentration of the SiC semiconductor layer . 5. The SiC semiconductor device according to claim 4 , wherein an impurity concentration of the second conductivity type region in the guard ring is higher than a second conductivity type impurity concentration of the guard ring . The SiC semiconductor device according to claim 4, wherein the guard ring is formed by the same impurity implantation step as the step of forming the body region . The body region includes a body contact region in contact with the source electrode, the first conductivity type region is formed by the same impurity implantation step as the step of forming the source region, and the second conductivity type region is The SiC semiconductor device according to claim 6 , wherein the SiC semiconductor device is formed by the same impurity implantation step as the step of forming the body contact region .

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