JP5733830B2 - シートを形成する方法及び装置 - Google Patents

シートを形成する方法及び装置 Download PDF

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Publication number
JP5733830B2
JP5733830B2 JP2011523145A JP2011523145A JP5733830B2 JP 5733830 B2 JP5733830 B2 JP 5733830B2 JP 2011523145 A JP2011523145 A JP 2011523145A JP 2011523145 A JP2011523145 A JP 2011523145A JP 5733830 B2 JP5733830 B2 JP 5733830B2
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sheet
thickness
melt
reducing
silicon
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Japanese (ja)
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JP2012500172A5 (enExample
JP2012500172A (ja
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ケラーマン、ピーター、エル．
カールソン、フレデリック
シンクレーア、フランク
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バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/001—Continuous growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
    • C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/52—Alloys
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/64—Flat crystals, e.g. plates, strips or discs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2011523145A 2008-08-15 2009-08-12 シートを形成する方法及び装置 Expired - Fee Related JP5733830B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US8928908P 2008-08-15 2008-08-15
US61/089,289 2008-08-15
US12/539,125 US8475591B2 (en) 2008-08-15 2009-08-11 Method of controlling a thickness of a sheet formed from a melt
US12/539,125 2009-08-11
PCT/US2009/053588 WO2010019695A2 (en) 2008-08-15 2009-08-12 Sheet thickness control

Publications (3)

Publication Number Publication Date
JP2012500172A JP2012500172A (ja) 2012-01-05
JP2012500172A5 JP2012500172A5 (enExample) 2015-02-19
JP5733830B2 true JP5733830B2 (ja) 2015-06-10

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JP2011523145A Expired - Fee Related JP5733830B2 (ja) 2008-08-15 2009-08-12 シートを形成する方法及び装置

Country Status (7)

Country Link
US (1) US8475591B2 (enExample)
EP (1) EP2319089B1 (enExample)
JP (1) JP5733830B2 (enExample)
KR (1) KR101681658B1 (enExample)
CN (1) CN102150283B (enExample)
TW (1) TWI463043B (enExample)
WO (1) WO2010019695A2 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7955433B2 (en) * 2007-07-26 2011-06-07 Calisolar, Inc. Method and system for forming a silicon ingot using a low-grade silicon feedstock
US7855087B2 (en) * 2008-03-14 2010-12-21 Varian Semiconductor Equipment Associates, Inc. Floating sheet production apparatus and method
US9050652B2 (en) * 2008-11-14 2015-06-09 Carnegie Mellon University Methods for casting by a float process and associated apparatuses
US8685162B2 (en) * 2010-05-06 2014-04-01 Varian Semiconductor Equipment Associates, Inc. Removing a sheet from the surface of a melt using gas jets
US9970125B2 (en) * 2012-02-17 2018-05-15 Varian Semiconductor Equipment Associates, Inc. Method for achieving sustained anisotropic crystal growth on the surface of a silicon melt
US20130213296A1 (en) * 2012-02-17 2013-08-22 Varian Semiconductor Equipment Associates, Inc. Method for achieving sustained anisotropic crystal growth on the surface of a melt
CN106605103B (zh) 2014-09-09 2019-11-26 西门子公司 用于燃气涡轮发动机的燃烧器的声阻尼系统
US9556051B2 (en) 2014-09-22 2017-01-31 Corning Incorporated Methods for controlling the thickness wedge in a glass ribbon
US10030317B2 (en) * 2014-10-17 2018-07-24 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for controlling thickness of a crystalline sheet grown on a melt
TWI668442B (zh) * 2014-10-17 2019-08-11 美商瓦里安半導體設備公司 薄片形成設備、用於測量熔體表面的薄片的厚度的系統及用於在薄片形成設備中測定材料界面的位置的方法
US9574285B2 (en) 2014-12-10 2017-02-21 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for monitoring and controlling thickness of a crystalline layer
JP2022543358A (ja) * 2019-08-09 2022-10-12 リーディング エッジ イクウィップメント テクノロジーズ インコーポレイテッド 酸素濃度の低い領域を有するリボンまたはウェハの製造
MX2022010077A (es) 2020-02-19 2022-09-29 Leading Edge Equipment Tech Inc Control activo de borde de una lamina cristalina formada en la superficie de una masa fundida.

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3430680A (en) * 1966-06-16 1969-03-04 George R Leghorn Method of forming structural shapes from molten material by stream casting
US3681033A (en) * 1969-01-31 1972-08-01 Gen Motors Corp Horizontal growth of crystal ribbons
US3607115A (en) * 1969-10-29 1971-09-21 Gen Motors Corp Crystal pulling from molten melts including solute introduction means below the seed-melt interface
US3759671A (en) * 1971-10-15 1973-09-18 Gen Motors Corp Horizontal growth of crystal ribbons
DE2633961C2 (de) * 1975-07-28 1986-01-02 Mitsubishi Kinzoku K.K. Verfahren zum Ziehen eines dünnen Halbleiter-Einkristallbandes
JPS5261180A (en) * 1975-11-14 1977-05-20 Toyo Shirikon Kk Horizontal growth of crystal ribbons
US4121965A (en) * 1976-07-16 1978-10-24 The United States Of America As Represented By The Administrator Of The National Aeronautics & Space Administration Method of controlling defect orientation in silicon crystal ribbon growth
JPS5580798A (en) * 1978-12-09 1980-06-18 Agency Of Ind Science & Technol Ribbon crystal growing method by lateral pulling
JPS5580797A (en) * 1978-12-09 1980-06-18 Agency Of Ind Science & Technol Ribbon crystal growing method by lateral pulling accompanied by circulating melt convection
US4289571A (en) * 1979-06-25 1981-09-15 Energy Materials Corporation Method and apparatus for producing crystalline ribbons
US4661200A (en) * 1980-01-07 1987-04-28 Sachs Emanuel M String stabilized ribbon growth
US4417944A (en) * 1980-07-07 1983-11-29 Jewett David N Controlled heat sink for crystal ribbon growth
DE3049376A1 (de) * 1980-12-29 1982-07-29 Heliotronic Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH, 8263 Burghausen Verfahren zur herstellung vertikaler pn-uebergaenge beim ziehen von siliciumscheiben aus einer siliciumschmelze
US4594229A (en) * 1981-02-25 1986-06-10 Emanuel M. Sachs Apparatus for melt growth of crystalline semiconductor sheets
DE3132776A1 (de) * 1981-08-19 1983-03-03 Heliotronic Gmbh Verfahren zur herstellung grob- bis einkristalliner folien aus halbleitermaterial
DE3338335A1 (de) * 1983-10-21 1985-05-09 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von grossflaechigen siliziumkristallkoerpern fuer solarzellen
US4599244A (en) * 1984-07-11 1986-07-08 Siemens Aktiengesellschaft Method large-area silicon bodies
US4599132A (en) * 1985-01-18 1986-07-08 Energy Materials Corporation Guidance system for low angle silicon ribbon growth
US4873063A (en) * 1986-01-06 1989-10-10 Bleil Carl E Apparatus for zone regrowth of crystal ribbons
US5055157A (en) * 1990-02-05 1991-10-08 Bleil Carl E Method of crystal ribbon growth
US5069742A (en) * 1990-02-05 1991-12-03 Bleil Carl E Method and apparatus for crystal ribbon growth
US5229083A (en) * 1990-02-05 1993-07-20 Bleil Carl E Method and apparatus for crystal ribbon growth
JPH0688106B2 (ja) * 1990-02-19 1994-11-09 株式会社オー・シー・シー 帯状金属鋳塊の水平式連続鋳造法及びその装置
JPH04104989A (ja) * 1990-08-25 1992-04-07 Sumitomo Electric Ind Ltd 液相エピタキシャル成長方法および装置
US5394825A (en) * 1992-02-28 1995-03-07 Crystal Systems, Inc. Method and apparatus for growing shaped crystals
JP2642031B2 (ja) * 1992-05-19 1997-08-20 住友電気工業株式会社 化合物半導体の液相エピタキシャル成長方法及び化合物半導体単結晶基板
JPH06137814A (ja) * 1992-10-27 1994-05-20 Hitachi Ltd 微小変位測定方法およびその装置
JP2000182978A (ja) * 1998-12-14 2000-06-30 Sharp Corp 液相エピタキシャル成長方法及び装置
US6090199A (en) * 1999-05-03 2000-07-18 Evergreen Solar, Inc. Continuous melt replenishment for crystal growth
JP4121697B2 (ja) * 1999-12-27 2008-07-23 シャープ株式会社 結晶シートの製造方法およびその製造装置
US20060102078A1 (en) * 2004-11-18 2006-05-18 Intevac Inc. Wafer fab
KR20060071957A (ko) 2004-12-22 2006-06-27 주식회사 실트론 실리콘 기판의 제조 방법
US20060213589A1 (en) * 2005-03-23 2006-09-28 Fuji Photo Film Co., Ltd. Method of manufacturing a support for a lithographic printing plate
WO2007019494A2 (en) * 2005-08-05 2007-02-15 Reveo, Inc. Si ribbon, sio2 ribbon and ultra pure ribbons of other substances
WO2007084934A2 (en) * 2006-01-20 2007-07-26 Bp Corporation North America Inc. Methods and apparatuses for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics
CN101133194B (zh) 2006-02-16 2010-12-08 靳永钢 浮法硅晶片的制作工艺和设备
JP5433154B2 (ja) * 2007-02-23 2014-03-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8064071B2 (en) * 2008-03-14 2011-11-22 Varian Semiconductor Equipment Associates, Inc. Floating sheet measurement apparatus and method
US7855087B2 (en) * 2008-03-14 2010-12-21 Varian Semiconductor Equipment Associates, Inc. Floating sheet production apparatus and method

Also Published As

Publication number Publication date
EP2319089B1 (en) 2012-12-12
US20100038826A1 (en) 2010-02-18
EP2319089A4 (en) 2011-10-26
CN102150283A (zh) 2011-08-10
CN102150283B (zh) 2013-06-05
WO2010019695A3 (en) 2010-04-15
KR101681658B1 (ko) 2016-12-01
TW201012979A (en) 2010-04-01
KR20110044784A (ko) 2011-04-29
WO2010019695A2 (en) 2010-02-18
JP2012500172A (ja) 2012-01-05
TWI463043B (zh) 2014-12-01
US8475591B2 (en) 2013-07-02
EP2319089A2 (en) 2011-05-11

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