JP5724699B2 - Mask for selective film formation - Google Patents

Description

  The present invention relates to a selective film formation mask.

In the manufacture of semiconductor devices, semiconductor mounting substrates, flat panel display devices, etc., a mask having an opening pattern corresponding to the pattern of a film to be formed on a film formation substrate such as a wafer is used as a method for forming a pattern film such as an electrode. There is a selective film formation method that attaches and performs vapor phase film formation such as sputtering, vapor deposition, or ion plating.
In this method, since the film is formed with the mask mounted on the film formation substrate, the mask thermally expands due to the heat during film formation, and the mask is lifted or deformed. Accuracy may be reduced.

  Patent Document 1 discloses a vacuum vapor deposition mask in which a region (52) for relaxing distortion is provided between a region (51) for holding a mask and a film formation region (53). FIG. 5). Examples of the strain relaxation region include a shape in which an opening is provided between the holding region and the film forming region, and a shape in which a mesh structure is formed between the holding region and the film forming region (paragraph 0028).

  In Patent Document 2, a stress buffering hole (25, 65) having a slit shape or a mesh shape is provided between the pattern portion (22) of the selective vapor deposition mask (21) and the fixing portion of the mask fixing hole (23). , 85), and a selective vapor deposition mask provided with a stress relaxation opening (Claim 1, FIG. 1, FIG. 10, and FIG. 11).

JP 2005-310472 A JP 09-027454

A conventional selective film formation mask and a film formation method using the same will be described with reference to the drawings.
4A is a top view of the mask, and FIG. 4B is a cross-sectional view of the mask. 5A to 5C are film formation process diagrams, and each drawing is a cross-sectional view. 4 and FIGS. 5A to 5C are cross-sectional views taken along the line AB of FIG.
In the figure, reference numeral 101 denotes a film formation substrate, reference numeral 102 denotes a mask, and reference numeral 103 denotes a film.

  The selective film formation mask 102 has an opening pattern corresponding to the pattern of the film 103, and a stress relaxation opening made up of a slit-like through-hole for relaxing the stress applied to the selective film formation mask 102 during film formation. Part 130.

4A, a plurality of rectangular portions 110X arranged in a matrix form are chip pattern regions corresponding to the formation regions of the respective semiconductor chips, and the pattern of the film 103 formed by each chip pattern region 110X. It has an opening pattern according to. A non-opening region 110Y corresponding to the dicing region is formed between the chip pattern regions 110X adjacent to each other. On the film formation substrate 101, the entirety of the plurality of chip pattern regions 110X is a pattern portion 110.
In the figure, reference numeral 120 denotes an external area of the pattern unit 110.

  As shown in FIG. 5A, a mask 102 is attached on the deposition substrate 101. By performing film formation as shown in FIG. 5B and removing the mask 102, the film 103 having a predetermined pattern shown in FIG. 5C is obtained.

  In the film formation method, film formation is also performed on the opening region of the stress relaxation opening 130 on the film formation substrate 101, and an unnecessary pattern 103N remains even after the mask 102 is removed. Therefore, as in Patent Documents 1 and 2, it is necessary to provide the stress relaxation opening 130 in the external region 120 of the pattern part 110 in which the opening pattern corresponding to the pattern of the film 103 to be formed is formed. In such a configuration, it is difficult to sufficiently relieve the stress of the mask 102 for the pattern portion 110 in the region including the central portion of the mask 102, and the mask 102 is lifted or the mask 102 is deformed. May fall.

  It is conceivable to arrange the stress relaxation opening 130 in the dicing region 110 </ b> Y in the pattern portion 110. However, when a metal or the like is deposited on the dicing area 110Y, the load on the dicing blade increases and is easily consumed, and the blade is liable to be chipped or chipped. For this reason, the number of equipment stoppages increases and the frequency of blade replacement increases, resulting in high costs.

  The present invention has been made in view of the above circumstances. For selective film formation, an opening for stress relaxation can be provided in the pattern portion without increasing the load of dicing, and the pattern accuracy can be improved. The object is to provide a mask.

  In this specification, as shown in the upper diagram of FIG. 4A, when there are a plurality of pattern regions corresponding to a plurality of semiconductor chips or the like, unless otherwise specified, the “pattern part” is not an individual pattern region but a plurality of pattern regions. Is defined as a pattern part.

The mask for selective film formation of the present invention is
A selective film formation mask mounted on a film formation substrate for forming a film in a predetermined pattern on the film formation substrate;
An opening pattern corresponding to the pattern of the film, and an opening for stress relaxation for relieving stress applied to the selective film-formation mask at the time of film formation, opening at least on one surface;
The stress relaxation opening has a cross-sectional structure in which the surface of the film formation substrate is not directly visible through the stress relaxation opening when the selective film formation mask is mounted on the film formation substrate. Is.

As a preferable aspect of the selective film formation mask of the present invention,
The stress relaxation opening opens on both one side and the other side,
An embodiment in which the opening position on the one surface and the opening position on the other surface do not overlap with each other can be mentioned.

The stress relaxation opening may have, for example, a step-like cross-sectional structure or an oblique linear cross-sectional structure.
In this specification, the term “obliquely linear” means an obliquely linear shape with respect to the “mask surface”.

The stress relaxation opening can be formed in a non-opening region of the opening pattern in the pattern portion where the opening pattern is formed.
The stress relaxation opening can also be formed in an external region of the pattern portion where the opening pattern is formed.

  According to the present invention, it is possible to provide a selective film formation mask capable of providing a stress relaxation opening in a pattern portion without increasing the dicing load and improving the pattern accuracy.

The upper view is a top view of a selective film formation mask according to an embodiment of the present invention, and the lower view is a sectional view thereof. It is the elements on larger scale of the lower figure of FIG. 1A. FIG. 1B is a film forming process diagram using the selective film forming mask of FIG. 1A. FIG. 1B is a film forming process diagram using the selective film forming mask of FIG. 1A. FIG. 1B is a film forming process diagram using the selective film forming mask of FIG. 1A. It is sectional drawing which shows a design change. The upper figure is a top view of a conventional selective film formation mask, and the lower figure is a sectional view thereof. FIG. 5 is a film formation process diagram using the selective film formation mask of FIG. 4. FIG. 5 is a film formation process diagram using the selective film formation mask of FIG. 4. FIG. 5 is a film formation process diagram using the selective film formation mask of FIG. 4.

A selective film formation mask and a film formation method using the same according to an embodiment of the present invention will be described with reference to the drawings.
1A is a top view of the selective film formation mask of the present embodiment, FIG. 1A is a cross-sectional view of the selective film formation mask of the present embodiment, and FIG. 1B is a partially enlarged view of the lower view of FIG. 1A.
2A to 2C are film formation process diagrams, and each figure is a cross-sectional view.
1A, FIG. 1B, and FIGS. 2A to 2C are cross-sectional views taken along line AB of FIG. 1A.
FIG. 3 is a diagram showing a design change.
Each figure is a schematic diagram.
In the figure, reference numeral 1 denotes a film formation substrate, reference numeral 2 denotes a mask, and reference numeral 3 denotes a film.

As shown in FIGS. 1A and 2A to 2C, the selective film formation mask 2 of this embodiment is attached on a film formation substrate 1, and a film 3 is formed on the film formation substrate 1 in a predetermined pattern. Is for.
The selective film formation mask 2 has an opening pattern corresponding to the pattern of the film 3 and an opening on at least one surface, and a stress relaxation opening for relieving stress applied to the selective film formation mask 2 during film formation. Part 30.

In the present embodiment, the film formation substrate 1 is a wafer, or a single layer or multiple layer film such as a conductive film such as an electrode or wiring, a semiconductor film, or an insulating film formed on the wafer.
The film 3 may be a conductive film such as a metal electrode, a semiconductor film, or an insulating film, and the material is arbitrary.

In the upper diagram of FIG. 1A, each of the plurality of rectangular portions 10X arranged in a matrix is a chip pattern region corresponding to the formation region of each semiconductor chip, and the pattern of the film 3 formed by each chip pattern region 10X. It has an opening pattern according to. A non-opening region 10Y corresponding to the dicing region is formed between the chip pattern regions 10X adjacent to each other. A plurality of chip pattern areas 10 </ b> X as a whole is a pattern portion 10 on the film formation substrate 1.
In the figure, reference numeral 20 denotes an external area of the pattern unit 10.

  In the present embodiment, the stress relaxation opening 30 has a cross-sectional structure in which the surface of the film formation substrate 1 is not directly visible through the stress relaxation opening 30 when the selective film formation mask 2 is attached to the film formation substrate 1. have.

As shown in an enlarged view in FIG. 1B, in this embodiment, the stress relaxation opening 30 opens on both the one surface (upper surface in the drawing) 2A and the other surface (lower surface in the drawing) 2B. The planar position of the opening 30A on the surface 2A and the opening 30B on the other surface 2B do not overlap.
In the present embodiment, the stress relaxation opening 30 has a step-like cross-sectional structure.
In the present embodiment, the stress relaxation opening 30 includes a first hole 31 extending in the thickness direction from the opening 30A on the one surface 2A and a first hole 31 extending in the thickness direction from the opening 30B on the other surface 2B. 2 holes 32, and a connection hole 33 that connects the first hole 31 and the second hole 32.

  Examples of the method for manufacturing the selective film-forming mask 2 having the stepped cross-sectional structure include a first mask in which the first hole 31 is formed and a second mask in which the second hole 32 is formed. And the like, and a diffusion bonding method.

Next, a film formation method using the selective film formation mask 2 of the present embodiment will be described with reference to FIGS. 2A to 2C.
First, as shown in FIG. 2A, a mask 2 is attached on the film formation substrate 1. Film formation is performed as shown in FIG. 2B, and the mask 2 is removed to obtain a film 3 having a predetermined pattern shown in FIG. 2C.

  In the masks described in Patent Documents 1 and 2 mentioned in the section of “Background Art”, a through hole extending straight from one surface of the mask to the other surface is provided as a stress relief opening, such as a slit shape. Therefore, an unnecessary film is formed in the opening region of the stress relaxation opening on the film formation substrate. When the stress relaxation opening is provided in the dicing region, the load of dicing increases. Therefore, as in Patent Documents 1 and 2, it is necessary to provide the stress relaxation opening in the external region of the pattern portion where the opening pattern corresponding to the pattern of the film to be formed is formed.

In this embodiment, when the selective film formation mask 2 is attached on the film formation substrate 1, the surface of the film formation substrate 1 is not directly visible through the stress relaxation opening 30. The unnecessary film 3 is not formed in the opening region 30 </ b> A of the stress relaxation opening 30 on the film substrate 1.
As shown in the enlarged view in FIG. 2B, since the stress relaxation opening 30 has the stepped cross-sectional structure, the film forming material that has reached the opening region 30A of the stress relaxation opening 30 is stress It only deposits on the bottom of the first hole 31 in the relaxation opening 30 and does not reach the film formation substrate 1.
Therefore, in the selective film formation mask 2 of the present embodiment, the position where the stress relaxation opening 30 is provided is not limited as long as it is a non-opening region of an opening pattern corresponding to the pattern of the film 3 to be formed.

Similar to Patent Documents 1 and 2, in the selective film formation mask 2 of the present embodiment, the stress relaxation opening 30 can be formed in the external region 20 of the pattern unit 10.
In the selective film formation mask 2 of this embodiment, the stress relaxation opening 30 can be formed in the non-opening region (dicing region) 10Y of the opening pattern in the pattern unit 10.
In the example shown in the lower diagram of FIG. 1A, the stress relaxation opening 30 is provided in both the external region 20 of the pattern unit 10 and the non-opening region (dicing region) 10Y of the opening pattern in the pattern unit 10.

In the present embodiment, if the opening pattern is a non-opening region corresponding to the pattern of the film 3 to be formed, there is no restriction on the position where the stress relaxation opening 30 is provided. The stress relaxation opening 30 can also be provided in the internal region. Therefore, the stress can be sufficiently relieved over the entire surface of the mask 2, and the mask 2 can be prevented from being lifted or deformed during the film formation, thereby improving the pattern accuracy of the film 3 having a desired pattern. Can do.
In the present embodiment, even if the stress relaxation opening 30 is provided in the non-opening region (dicing region) 10 </ b> Y in the pattern unit 10, no film is formed in the opening region of the stress relaxation opening 30 on the film formation substrate 1. Therefore, the dicing load does not increase.

The stress relaxation opening 30 is not limited to the mode shown in FIG. 1B, and when the selective film formation mask 2 is attached on the film formation substrate 1, the surface of the film formation substrate 1 is directly passed through the stress relaxation opening 30. What is necessary is just to have a cross-sectional structure which is not visually recognized.
As shown in FIG. 3, the stress relaxation opening 30 may have an oblique linear cross-sectional structure.
Examples of a method for manufacturing a selective film-formation mask having an oblique straight cross-sectional structure include laser processing.

  The stress relaxation opening 30 may be a closed hole in which only one of the one surface 2A and the other surface 2B is opened.

  As described above, according to the present embodiment, the stress relaxation opening 30 can be provided in the pattern portion 10 without increasing the load of dicing, and the selective component capable of improving the pattern accuracy. A film mask 2 can be provided.

"Design changes"
The present invention is not limited to the above embodiment, and can be appropriately modified within a range not departing from the gist of the present invention.

  The selective film formation mask of the present invention is preferably applicable to the formation of pattern films such as electrodes in the manufacture of semiconductor devices, semiconductor mounting substrates, flat panel display devices, and the like.

DESCRIPTION OF SYMBOLS 1 Film-forming substrate 2 Selective film-forming mask 2A One side 2B The other side 3 Film 10 Pattern part 10X Chip pattern area 10Y Non-opening area (dicing area)
20 External part 30 of pattern part 30A, 30B for stress relaxation Opening location 31 1st hole 32 2nd hole 33 Connection hole

Claims (7)

A selective film formation mask that is attached to a wafer or a film formation substrate having a single-layer or multiple-layer base film formed on the wafer and forms a film with a predetermined pattern on the film formation substrate. Because
An opening pattern corresponding to the pattern of the film, and an opening for stress relaxation for relieving stress applied to the selective film-formation mask at the time of film formation, opening at least on one surface;
It said stress relaxing opening, when fitted with the selected film formation mask in the deposition on the substrate, the surface of the deposition substrate have a cross-sectional structure which is not directly visible through the stress relieving opening,
And,
The selective film formation mask is a selective film formation mask that is not divided by the stress relaxation opening in a plan view . 2. The selective film formation mask according to claim 1, wherein the stress relaxation opening is a closed hole in which only one of the one surface and the other surface is opened. The stress relaxation opening opens on both one side and the other side,
2. The selective film formation mask according to claim 1, wherein the opening position on the one surface and the opening position on the other surface do not overlap with each other. The selective film-forming mask according to claim 1 , wherein the stress relaxation opening has a stepped cross-sectional structure. The selective film-forming mask according to claim 1 , wherein the stress relaxation opening has an oblique linear cross-sectional structure. It said stress relaxation opening is selected deposition mask according to any one of the opening claims formed in a non-opening area of the pattern 1-5 of the opening pattern in the pattern portion formed. It said stress relaxation opening is selected deposition mask according to any one of the claims 1-6 in which an opening pattern is formed in the external region of the formed pattern portion.

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