JP5708734B2 - Multilayer solid-state imaging device and electronic apparatus - Google Patents

Description

  The present invention relates to a solid-state imaging device, a driving method for the solid-state imaging device, and an electronic apparatus.

  The pixel portion of the solid-state imaging device is configured in an array form (matrix form). Since the pixel portion is configured in an array, the pixel driving and signal readout circuits are arranged in the vertical direction (row arrangement direction) and the horizontal direction (column arrangement) corresponding to the arrangement of the pixel in the array form. In many cases, the circuit is composed of a repeated arrangement pattern with respect to (direction).

  In the circuit of this repeated arrangement pattern, the activation / inactivation timing of the signal depends on the position in the vertical direction or the horizontal direction due to the difference in parasitic resistance and capacitance due to the wiring length and the difference in IR drop amount due to the distance from the power source. There is a delay. Here, IR drop is a voltage drop of an IR product (product of current I and resistance R) generated on the power supply wiring.

  If the delay of the activation / deactivation timing of the signal due to the position in the vertical direction and the horizontal direction occurs, it causes the shading in the vertical direction and the horizontal direction and the lack of simultaneity. In order to avoid the occurrence of shading, it is desirable to be able to correct the tuning of signal activation / deactivation timing in units of rows and columns.

  Furthermore, the parasitic resistance and parasitic capacitance of the wiring and the threshold values of the transistors constituting the circuit of the repeated arrangement pattern vary from chip to chip. For this reason, the difference in the activation / deactivation timing of the signal varies from chip to chip, and the correction amount for shading and simultaneity also varies from chip to chip.

  Therefore, if the tuning correction for the chip variation is not performed, a specification in consideration of the distribution tail is necessary, and there is a concern that the yield may be lowered. Therefore, it is desirable that tuning correction of signal activation / deactivation timing can be performed for each chip.

  Conventionally, as a method for tuning and correcting the characteristic value of a solid-state imaging device, a method is known in which a nonvolatile memory is provided on the same chip or in the same package and recommended characteristic information written in the memory is used. (For example, refer to Patent Document 1).

  In this conventional method, recommended characteristic information regarding the drive voltage range, power supply fluctuation, and the like is written in the nonvolatile memory. Then, the set maker reads the characteristic information written in the nonvolatile memory through the external terminal, and individually adjusts the power supply voltage based on the characteristic information.

JP 2007-208926 A

  The prior art described in Patent Document 1 is based on the premise of handling a limited amount of information such as defect information and characteristic information of a solid-state imaging device, and the number of terminals (pins) for inputting / outputting information to / from a nonvolatile memory is extremely large. Few. For this reason, it is not possible to cope with tuning corrections in a large number of rows and columns corresponding to the number of rows, the number of columns of the pixel array portion, or the like.

  If the SOC structure in which the solid-state imaging device and the adjustment circuit including the non-volatile memory are mixedly mounted on the same substrate is adopted, the solid-state imaging device and the non-volatile memory are not external terminals with a limited number of terminals. Since it is possible to connect, it seems that tuning correction of the above-mentioned many places is possible.

  However, in general, in the case of a nonvolatile memory, a high voltage of about 10 to 20 V is required for writing information. On the other hand, in the case of a solid-state imaging device, the drive is a low voltage of about 3 to 5V. Therefore, when a low-voltage solid-state imaging device and an adjustment circuit including a nonvolatile memory that requires a high voltage are mixedly mounted on the same substrate, the circuit of the solid-state imaging device is affected in terms of pressure resistance. Therefore, the mixed loading itself becomes difficult in terms of process.

  Therefore, the present invention is capable of tuning correction of a large number of rows and columns corresponding to the number of rows, the number of columns, or the like, and is a solid without process difficulties such as withstand voltage generated in the SOC structure. An object is to provide an imaging device, a driving method of a solid-state imaging device, and an electronic apparatus.

In order to achieve the above object, the present invention provides:
A repetitive array pattern circuit is formed in which unit circuits are regularly and repeatedly arranged in at least one of the direction in which the pixel rows of the pixel array unit in which pixels including the photoelectric conversion unit are arranged in a matrix and the direction in which the pixel columns are arranged. The first chip made,
An adjustment circuit including a plurality of unit circuits and storage elements corresponding to each unit circuit of the repetitive array pattern circuit is formed, and includes a second chip stacked on the first chip,
In the solid-state imaging device formed by electrically connecting each unit circuit of the repetitive array pattern circuit on the first chip and each unit circuit of the adjustment circuit on the second chip with a corresponding relationship,
A configuration is employed in which the timing of signals related to individual unit circuits of the repetitive array pattern circuit is individually adjusted by the corresponding unit circuit of the adjustment circuit.

  The electrical connection between the first and second chips is a three-dimensional connection by stacking both chips. In the repetitive array pattern circuit on the first chip, due to differences in parasitic resistance and parasitic capacitance due to wiring length and differences in IR drop amount due to distance from the power supply, the direction of pixel rows and the direction of pixel columns are different. Depending on the position, the activation / deactivation timing of the signal is delayed. The signal in which the activation / deactivation timing is delayed is input via a three-dimensional connection to the corresponding unit circuit of the adjustment circuit on the second chip.

  The adjustment circuit individually adjusts (tuning correction) the timing of the signal in which the activation / deactivation timing is delayed based on the storage data of the storage element in each unit circuit. By this timing adjustment, for example, the activation / deactivation timing can be synchronized. As a result, the final signal relating to each unit circuit of the repetitive array pattern circuit is a signal having no delay in activation / deactivation timing.

According to the present invention, first, that the electrical connection between the second chip mutual Ru place at a three-dimensional connection, because the connection terminal number of constraints is eliminated, the number of rows of the pixel array section, the column Tuning correction can be performed at multiple points in a plurality of rows and columns corresponding to several minutes or the like. Moreover, since the low-voltage-driven repetitive array pattern circuit and the adjustment circuit including the memory element that requires a high voltage are formed on different chips, there is no process difficulty such as withstand voltage generated in the SOC structure. .

1 is a system configuration diagram showing an outline of a system configuration of a CMOS image sensor to which the present invention is applied. It is a circuit diagram which shows an example of the circuit structure of a unit pixel. It is a block diagram which shows an example of the circuit structure of the driver part of a row scanning part. It is a wave form diagram which shows a mode that a difference arises in the active / inactive timing of a pixel drive signal (vb1-vbm) by generation | occurrence | production of the delay time difference and the difference of IR drop amount. 1 is a system configuration diagram illustrating an outline of a system configuration of a solid-state imaging apparatus according to an embodiment of the present invention. 1 is a system configuration diagram illustrating an outline of a system configuration of a solid-state imaging apparatus according to Embodiment 1 of the present invention. It is a system block diagram which shows the outline of the system configuration | structure of the solid-state imaging device which concerns on Example 2 of this invention. It is a flowchart which shows an example of the tuning process of the monitor feedback at the time of a manufacturing test. It is a flowchart which shows an example of the tuning correction | amendment at the time of product use. It is a system configuration | structure figure which shows the outline of the system configuration | structure of the solid-state imaging device which concerns on Example 3 of this invention. It is a system block diagram which shows the outline of the system configuration | structure of the solid-state imaging device which concerns on Example 4 of this invention. It is a system configuration figure showing the outline of the system configuration of the solid-state imaging device concerning the modification of the present invention. It is a block diagram which shows an example of a structure of the imaging device which is one of the electronic devices which concern on this invention, for example.

Hereinafter, modes for carrying out the invention (hereinafter referred to as “embodiments”) will be described in detail with reference to the drawings. The description will be given in the following order.
1. Solid-state imaging device to which the present invention is applied (example of a CMOS image sensor)
2. 2. Characteristic part of this embodiment 2-1. Example 1 (an example in which the repeated array pattern circuit is a row scanning unit)
2-2. Example 2 (example with monitor feedback function)
2-3. Example 3 (example of BIST configuration)
2-4. Example 4 (an example in which the pixel array unit and the row scanning unit are separate chips)
2-5. Modified example 2. Other application examples Electronic equipment (example of imaging device)

<1. Solid-state imaging device to which the present invention is applied>
(System configuration)
FIG. 1 is a system configuration diagram showing an outline of a system configuration of a solid-state imaging device to which the present invention is applied, for example, a CMOS image sensor which is a kind of XY address type solid-state imaging device. Here, the CMOS image sensor is an image sensor created by applying or partially using a CMOS process.

  The CMOS image sensor 10 according to this application example is integrated on a pixel array unit 12 formed on a semiconductor substrate (hereinafter also referred to as “chip”) 11 and on the same chip 11 as the pixel array unit 12. And a peripheral circuit portion. In this example, the peripheral circuit unit includes, for example, a row scanning unit (vertical driving unit) 13, a column processing unit 14, a column scanning unit (horizontal driving unit) 15, and the like.

  In the pixel array unit 12, unit pixels (hereinafter sometimes simply referred to as “pixels”) having a photoelectric conversion unit that generates and accumulates photoelectric charges having a charge amount corresponding to the amount of incident light are arranged in a matrix. Two-dimensional arrangement. A specific configuration of the unit pixel will be described later.

  Further, pixel drive lines 17 are wired along the horizontal direction (the direction in which the pixel columns are arranged) for each pixel row in the pixel array unit 12 for each pixel row, and the vertical signal lines 18 are vertical for each pixel column. Wiring is performed along the direction (direction in which the pixel rows are arranged). The pixel drive line 17 transmits a drive signal for driving to read a signal from the pixel. In FIG. 1, the pixel drive line 17 is shown as one wiring, but the number is not limited to one. One end of the pixel drive line 17 is connected to an output end corresponding to each row of the row scanning unit 13.

  The row scanning unit 13 includes a shift register, a decoder, and the like, and is a pixel driving unit that drives each pixel of the pixel array unit 12 at the same time or in units of rows. In this example, the row scanning unit 13 includes a decoder unit 131 that can arbitrarily designate an address, and a driver unit 132 that drives the pixel drive line 17 corresponding to the address designation by the decoder unit 131.

In the row scanning unit 13, the decoder unit 131 designates rows (va1 to vam) to be driven in synchronization with the activation signal ENva. In response to this row designation, the driver unit 132 activates the pixel drive signals (vb1 to vbm), and gives them to the respective pixels in the row designated by the decoder unit 131 through the pixel drive line 17, thereby shutter and exposure. , Transfer, reading, etc. are controlled. In FIG. 1, ENvb is a pixel drive signal of the driver unit 132.

  Although the illustration of the specific configuration of the row scanning unit 13 is omitted, in general, the row scanning unit 13 has a configuration having two scanning systems of a reading scanning system and a sweeping scanning system. The readout scanning system selectively scans the unit pixels of the pixel array unit 12 sequentially in units of rows in order to read out signals from the unit pixels. The signal read from the unit pixel is an analog signal. The sweep-out scanning system performs sweep-out scanning with respect to the readout row on which readout scanning is performed by the readout scanning system, preceding the readout scanning by a time corresponding to the shutter speed.

  By the sweep scanning by the sweep scanning system, unnecessary charges are swept out from the photoelectric conversion element of the unit pixel in the readout row, thereby resetting the photoelectric conversion element. A so-called electronic shutter operation is performed by sweeping (reset) unnecessary charges by the sweep scanning system. Here, the electronic shutter operation refers to an operation in which the photoelectric charge of the photoelectric conversion element is discarded and a new exposure is started (photocharge accumulation is started).

  The signal read by the reading operation by the reading scanning system corresponds to the amount of light incident after the immediately preceding reading operation or electronic shutter operation. The period from the read timing by the immediately preceding read operation or the sweep timing by the electronic shutter operation to the read timing by the current read operation is the photocharge accumulation period (exposure period) in the unit pixel.

  A signal output from each unit pixel in the pixel row selectively scanned by the row scanning unit 13 is supplied to the column processing unit 14 through each vertical signal line 18. For each pixel column of the pixel array unit 12, the column processing unit 14 performs predetermined signal processing on a signal output from each pixel of the selected row through the vertical signal line 18, and temporarily outputs the pixel signal after the signal processing. Hold on.

  Specifically, the column processing unit 14 receives a signal of a unit pixel and removes noise from the signal by, for example, CDS (Correlated Double Sampling), signal amplification, or AD (analog-digital). ) Perform signal processing such as conversion. By the noise removal processing, fixed pattern noise unique to the pixel such as reset noise and variation in threshold value of the amplification transistor is removed.

  In this example, the column processing unit 14 includes a comparator unit 141 and a counter unit 142 in order to realize AD conversion. In this column processing unit 14, the comparator unit 141 receives the activation signal ENha and converts the analog pixel signals (sl 1 to sln) read through the vertical signal line 18 into a linearly varying slope waveform having a certain slope. Compare with reference voltage.

  The counter unit 142 receives the activation signal ENhb and starts a count operation in synchronization with a clock having a fixed period. When the analog pixel signals (sl1 to sln) and the reference voltage intersect and the output of the comparator unit 141 is inverted, the counter unit 142 stops the counting operation in response to the inverted output (ha1 to han). The final count value of the counter unit 142 becomes a digital signal corresponding to the magnitude of the analog pixel signal.

  The column scanning unit 15 includes a shift register, a decoder, and the like, and sequentially selects unit circuits corresponding to the pixel columns of the column processing unit 14. By the selective scanning by the column scanning unit 15, the pixel signals processed by the column processing unit 14 are sequentially output to the horizontal bus 19 and transmitted to the outside of the chip 11 through the horizontal bus 19.

(Circuit configuration of unit pixel)
FIG. 2 is a circuit diagram illustrating an example of a circuit configuration of the unit pixel 20. As shown in FIG. 2, the unit pixel 20 according to this circuit example includes, for example, four transistors such as a transfer transistor 22, a reset transistor 23, an amplification transistor 24, and a selection transistor 25 in addition to a photodiode 21 that is a photoelectric conversion unit. This is a pixel circuit having

  Here, as these transistors 22 to 25, for example, N-channel MOS transistors are used. However, the conductivity type combinations of the transfer transistor 22, the reset transistor 23, the amplification transistor 24, and the selection transistor 25 illustrated here are merely examples, and are not limited to these combinations.

  For the unit pixel 20, as the pixel drive line 17, for example, three drive wirings of a transfer line 171, a reset line 172, and a selection line 173 are provided in common for each pixel in the same pixel row. One end of each of the transfer line 171, the reset line 172, and the selection line 173 is connected to an output end corresponding to each pixel row of the row scanning unit 13 in units of pixel rows.

  The photodiode 21 has an anode electrode connected to a negative power source (for example, ground), and photoelectrically converts received light into photocharge (here, photoelectrons) having a charge amount corresponding to the light amount. The cathode electrode of the photodiode 21 is electrically connected to the gate electrode of the amplification transistor 24 through the transfer transistor 22. A node 26 electrically connected to the gate electrode of the amplification transistor 24 is referred to as an FD (floating diffusion) portion.

  The transfer transistor 22 is connected between the cathode electrode of the photodiode 21 and the FD portion 26. A transfer pulse φTRF in which the high level (for example, Vdd level) is active (hereinafter referred to as “High active”) is applied to the gate electrode of the transfer transistor 22 via the transfer line 171. When the transfer pulse φTRF is applied, the transfer transistor 22 is turned on and the photoelectric charge photoelectrically converted by the photodiode 21 is transferred to the FD unit 26.

  The reset transistor 23 has a drain electrode connected to the pixel power source Vdd and a source electrode connected to the FD unit 26. A high active reset pulse φRST is applied to the gate electrode of the reset transistor 23 via the reset line 172 prior to the transfer of the signal charge from the photodiode 21 to the FD unit 26. When the reset pulse φRST is given, the reset transistor 23 is turned on, and the FD unit 26 is reset by discarding the charge of the FD unit 26 to the pixel power supply Vdd.

  The amplification transistor 24 has a gate electrode connected to the FD unit 26 and a drain electrode connected to the pixel power source Vdd. Then, the amplification transistor 24 outputs the potential of the FD unit 26 after being reset by the reset transistor 23 as a reset signal (reset level). The amplification transistor 24 further outputs the potential of the FD unit 26 after the transfer of the signal charge by the transfer transistor 22 as a light accumulation signal (signal level).

  For example, the selection transistor 25 has a drain electrode connected to the source electrode of the amplification transistor 24 and a source electrode connected to the vertical signal line 18. A high active selection pulse φSEL is applied to the gate electrode of the selection transistor 25 via a selection line 173. When the selection pulse φSEL is given, the selection transistor 25 is turned on, the unit pixel 20 is selected, and the signal output from the amplification transistor 24 is relayed to the vertical signal line 18.

  Here, the transfer pulse φTRF, the reset pulse φRST, and the selection pulse φSEL correspond to the pixel drive signals (vb1 to vbm) output from the driver unit 132 through the pixel drive line 17 described above. Note that the selection transistor 25 may have a circuit configuration connected between the pixel power supply Vdd and the drain of the amplification transistor 24.

  In addition, the unit pixel 20 is not limited to the pixel configuration including the four transistors having the above configuration. For example, a pixel configuration including three transistors that serve as both the amplification transistor 24 and the selection transistor 25 may be used, and the configuration of the pixel circuit is not limited.

(Repeated array pattern circuit)
In the CMOS image sensor 10 having the above-described configuration, the row scanning unit 13 serves as a vertical repeating pattern circuit. The decoder unit 131 and the driver unit 132 form a unit circuit that is regularly and repeatedly arranged in the vertical direction. Further, the column processing unit 14, the column scanning unit 15, and the like serve as a horizontal repeating pattern circuit. The unit circuit for each pixel column of the comparator unit 141 and the counter unit 142 and the column scanning unit 15 is a unit circuit that is regularly and repeatedly arranged in the horizontal direction. Examples of the horizontal repeating pattern circuit include a constant current source connected to one end of the vertical signal line 18 for each pixel column.

  Here, the driver unit 132 of the row scanning unit 13 will be described with reference to FIG. 3 as an example of a specific repetitive arrangement pattern. FIG. 3 is a block diagram illustrating an example of a circuit configuration of the driver unit 132 of the row scanning unit 13.

  As shown in FIG. 3, the driver unit 132 includes m OR gates 1321-1 to 1321-m and buffers 1322-1 to 1322-m corresponding to the number m of rows of the pixel array unit 12. . Each of the OR gates 1321-1 to 1321-m has two inputs, the row designation signals (va1 to vam) given individually from the decoder unit 131 and the all pixel drive signal ENvb given in common through the transmission line 1323. The buffers 1322-1 to 1322-m are supplied with the power supply voltage via the power supply pad 1324 and the power supply line 1325, and receive the outputs of the OR gates 1321-1 to 1321-m to generate pixel drive signals (vb1 to vbm). Is output.

  As described above, in the driver unit 132 which is an example of the repeated arrangement pattern circuit, the OR gates 1321-1 to 1321-m and the buffers 1322-1 to 1322-m are repeatedly arranged in the vertical direction (direction in which the pixel rows are arranged). It becomes the composition.

(Problem of signal activation / deactivation timing delay)
In the driver unit 132, a delay time difference occurs due to the difference in parasitic resistance and parasitic capacitance due to the wiring length of the transmission line 1323 that transmits the all-pixel drive signal ENvb, and the difference in IR drop size varies depending on the distance from the power supply pad 1324. It occurs. Then, due to the occurrence of the delay time difference and IR drop amount difference, as shown in FIG. 4, the activation / inactivation timing of the pixel drive signals (vb1 to vbm) varies depending on the vertical position (row position). Arise.

  Here, the activation / inactivation timing refers to rising / falling timing, that is, transition timing when the pixel drive signals (vb1 to vbm) are signals of positive logic (High active). This difference between the active / inactive timings causes a difference in time for driving the pixels 20, and thus causes shading in the vertical direction and lack of simultaneity.

<2. Characteristic part of this embodiment>
The present invention relates to a plurality of rows corresponding to the number of rows, the number of columns of the pixel array unit 12, or the like, which is not possible with SIP (system in package), with respect to the difference between the activation / inactivation timings of signals related to the repetitive array pattern circuit. This makes it possible to perform tuning correction at multiple points in a plurality of rows. An object of the present invention is to realize tuning correction at a large number of points without difficulty in process such as withstand voltage generated in the SOC structure.

  FIG. 5 shows an outline of a system configuration of a solid-state imaging device according to an embodiment of the present invention, which has been made to achieve the above object.

  As shown in FIG. 5, in this embodiment, the repeated array pattern circuit 31 is formed on the first chip 32. Here, the repetitive arrangement pattern circuit 31 is a unit circuit in which unit circuits are regularly and repeatedly arranged in at least one of the direction in which the pixel rows of the pixel array unit 12 are arranged (vertical direction) and the direction in which the pixel columns are arranged (horizontal direction). Say the circuit.

  For example, in the CMOS image sensor 10 shown in FIG. 1, the row scanning unit 13 is an example of the repeated arrangement pattern circuit 31 in which unit circuits are regularly and repeatedly arranged in the vertical direction. As the repeated arrangement pattern circuit 31 in which unit circuits are regularly and repeatedly arranged in the horizontal direction, the column processing unit 14, the column scanning unit 15, and a constant current connected to one end of the vertical signal line 18 for each pixel column. Source.

  Here, as the repeated array pattern circuit 31, for example, in the case of the row scanning unit 13 shown in FIG. 3, for example, an OR gate 1321 (1321-1 to 1321-m) and a buffer 1322 (1322-1 to 1322-). The circuit portion consisting of m) is a unit circuit. The unit circuit composed of the OR gate 1321 and the buffer 1322 is regularly arranged in units of pixel rows and arranged by the number of rows.

  When the repeated array pattern circuit 31 is the row scanning unit 13, the pixel drive signals (vb1 to vbm) are signals SIG1 to SIGm related to the repeated array pattern circuit 31. Incidentally, when the repeated array pattern circuit 31 is the column processing unit 14, the activation signals ENha and ENhb given to the comparator unit 141 and the counter unit 142 for each pixel column become signals SIG 1 to SIGm related to the repeated array pattern circuit 31.

  On the other hand, an adjustment circuit 33 for tuning correction is formed in the second chip 34. This adjustment circuit 33 tunes and corrects the difference in the activation / deactivation timing of the signals SIG1 to SIGm caused by the difference in parasitic resistance and parasitic capacitance due to the wiring length and the difference in IR drop amount due to the distance from the power source. For example, the timings of these signals are synchronized.

  The adjustment circuit 33 includes variable delay circuits 331-1 to 331 -m that are a plurality of unit circuits corresponding to individual unit circuits of the repetitive arrangement pattern circuit 31 and a nonvolatile memory 332 that is a storage element.

  The variable delay circuits 331-1 to 331 -m have a configuration in which the delay amount is variable by means such as resistance, capacitance, transistor stage number, current control, etc. x-bit adjustment is possible. Here, x is the number of adjustments of the variable delay circuits 331-1 to 331-m.

  The nonvolatile memory 332 includes (m × x) codes CODE1 [x: 1] to CODEm [x: for setting individual delay amounts for the m variable delay circuits 331-1 to 331-m. 1] is stored.

  Codes CODE1 [x: 1] to CODEm [x: 1] are predicted values predicted by simulation or the like, that is, different delay amounts depending on the positions in the vertical direction and the horizontal direction. The delay amount is stored in advance in the nonvolatile memory 332 as information for adjusting (correcting) the activation / inactivation timing of the signals SIG1 to SIGm related to the repetitive array pattern circuit 31.

  The second chip 34 on which the adjustment circuit 33 is formed is stacked on the first chip 32 on which the repeated arrangement pattern circuit 31 is formed. In this stacking, the vertical relationship of the position of the second chip 34 with respect to the first chip 32 is such that, when the pixel array unit 12 is generated on the first chip 32, the incident light incident structure (irradiation structure) on the pixel 20 It depends on.

  Specifically, when the side on which the wiring layer is arranged with respect to the photoelectric conversion unit (photodiode 21) is the front side, the surface incident type (surface irradiation type) pixel structure that takes in incident light from the front side. In this case, the second chip 34 is laminated on the first chip 32 so as to be on the back surface side. Further, in the case of a back-illuminated (back-illuminated) pixel structure that captures incident light from the side opposite to the side where the wiring layer is disposed, that is, from the back side, the first chip 34 is on the front side. The chip 32 is stacked.

  Each unit circuit of the repetitive array pattern circuit 31 on the first chip 32 and each unit circuit of the adjustment circuit 33 on the second chip 34, that is, the variable delay circuits 331-1 to 331 -m, are connected to each other. Are electrically connected in correspondence. The connection unit 35 has two paths: a path for transmitting a signal from the first chip 32 to the second chip 34 and a path for transmitting a signal from the second chip 34 to the first chip 32. Yes.

  The connection unit 35 uses each of the unit circuits of the repetitive array pattern circuit 31 and the variable delay circuits 331-1 to 331 by using a known three-dimensional connection technique such as TSV (through silicon via). -M is electrically connected. As the three-dimensional connection technique, in addition to TSV, for example, a connection technique using a micro bump can be used. The three-dimensionally connected locations by the connection unit 35 are locations in units of a plurality of rows and a plurality of columns corresponding to the number of rows, the number of columns corresponding to each unit circuit of the repetitive array pattern circuit 31, or the same.

(Tuning correction)
In the solid-state imaging device 30 according to the present embodiment having the above-described configuration, in the repetitive array pattern circuit 31 on the first chip 32, the difference in parasitic resistance and parasitic capacitance due to the wiring length in the pattern circuit 31, and the distance from the power source The difference in the amount of IR drop due to is inevitable. Due to these differences, activation / inactivation timing delays of the signals SIG1 to SIGm related to the repeated arrangement pattern circuit 31 occur depending on the positions in the vertical direction and the horizontal direction.

  Signals SIG1 to SIGm output from the individual unit circuits of the repetitive array pattern circuit 31 are temporarily supplied to the corresponding variable delay circuits 331-1 to 331 -m on the second chip 34 via the connection unit 35. The The variable delay circuits 331-1 to 331 -m individually correspond to the signals SIG 1 to SIGm with a delay amount based on the codes CODE 1 [x: 1] to CODEm [x: 1] stored in the nonvolatile memory 332. Adjust the timing. By this timing adjustment, for example, the activation / deactivation timings of the signals SIG1 to SIGm can be aligned (synchronized).

  The signals SIGD1 to SIGDm whose timings are adjusted by the variable delay circuits 331-1 to 331 -m are returned to the first chip 32 via the connection unit 35, and in this example, each pixel of the pixel array unit 12. Pixel drive signals vb1 to vbm (see FIG. 1) for driving 20 in units of rows. As a result, the final signals SIGD1 to SIGDm relating to the individual unit circuits of the repetitive array pattern circuit 31, that is, the pixel drive signals vbD1 to vbDm are signals having no delay in activation / inactivation timing.

  As described above, the repeated arrangement pattern circuit 31 is formed on the first chip 32, the adjustment circuit 33 is formed on the second chip 34, and the electrical connection between the first and second chips 32, 34 is performed. Is a three-dimensional connection by the connection unit 35. Accordingly, since there is no restriction on the number of terminals (pins) as in the case where the repetitive arrangement pattern circuit 31 and the adjustment circuit 33 are connected by an external terminal, the number corresponding to the number of rows, the number of columns of the pixel array unit 12 or the like. Tuning correction can be performed at a large number of locations in a plurality of rows and columns.

  Moreover, as an example, in order to form the repetitive array pattern circuit 31 driven at a low voltage of about 3 to 5 V and the adjustment circuit 33 including the nonvolatile memory 332 that requires a high voltage of about 10 to 20 V on different chips. In addition, there is no difficulty in process such as withstand voltage generated in the SOC structure.

  Hereinafter, specific examples of the solid-state imaging device (for example, a CMOS image sensor) according to this embodiment based on the above configuration will be described.

[2-1. Example 1]
FIG. 6 is a system configuration diagram illustrating an outline of a system configuration of the solid-state imaging device according to the first embodiment of the present invention. In FIG. 6, the same parts (corresponding parts) as those in FIGS. 1 and 5 are denoted by the same reference numerals, and redundant description is omitted.

  The solid-state imaging device 30 </ b> A according to the first embodiment has a configuration using the row scanning unit 13 as the repeated array pattern circuit 31. The row scanning unit 13 is formed on the same substrate as the pixel array unit 12, that is, the first chip 34, as in the case of the CMOS image sensor 10 shown in FIG. The first chip 34 corresponds to the semiconductor substrate 11 of FIG.

  The row scanning unit 13 has, for example, a circuit configuration illustrated in FIG. 3 and outputs pixel drive signals vb1 to vbm for driving each pixel 20 of the pixel array unit 12. These pixel drive signals vb1 to vbm are supplied to the variable delay circuit 331-1 of the adjustment circuit 33 via a three-dimensional connection portion 35 that electrically connects the first chip 32 and the second chip 34. ˜331-m.

  Here, it is assumed that the solid-state imaging device 30A has a global shutter (all-pixel simultaneous shutter) function that simultaneously performs shutter operation for all pixels, that is, starts exposure for all pixels simultaneously and ends exposure. This global shutter function is realized by the electronic shutter operation described above by the row scanning unit 13. In the case of a solid-state imaging device having a global shutter function, since the synchronism of timings such as shutter, exposure, and transfer is regarded as important, the timing difference between the pixel drive signals vb1 to vbm is reduced. Simultaneous operation is strongly required.

  Therefore, delay information for synchronizing the timings of the pixel drive signals vb1 to vbm supplied from the row scanning unit 13 via the connection unit 35 in advance to the nonvolatile memory 332, that is, code CODE1 [x: 1]. ] To CODEm [x: 1] are stored. This delay information is a predicted value predicted by simulation or the like. Specifically, in the row scanning unit 13, activation / inactivation of the pixel drive signals vb <b> 1 to vbm generated due to differences in parasitic resistance and parasitic capacitance due to wiring length and differences in IR drop amounts due to distance from the power source. It is set according to the amount of timing delay.

  The variable delay circuits 331-1 to 331 -m are the delay amounts based on the codes CODE1 [x: 1] to CODEm [x: 1] stored in the nonvolatile memory 332 with respect to the pixel drive signals vb1 to vbm. Adjust the timing (tuning correction) with. By this timing adjustment, synchronized pixel drive signals vbD1 to vbDm are output from the variable delay circuits 331-1 to 331-m. The pixel drive signals vbD1 to vbDm are input to the pixel array unit 12 via the connection unit 35.

  Here, the tuning correction is performed for each row. However, the tuning correction may be performed in units of a plurality of rows. As described above, the adjustment / correction timing of the pixel drive signals vbD1 to vbDm input to the pixel array unit 12 is aligned by performing tuning correction for each row using the adjustment circuit 33 or in units of multiple rows. (Synchronized).

  Thereby, since the shading in the vertical direction caused by the delay of the activation / deactivation timing due to the position in the vertical direction can be suppressed, the image quality can be improved. In particular, in a solid-state imaging device having a global shutter function that requires simultaneous operation of all pixels, the simultaneous operation of all pixels can be surely realized, thereby eliminating the occurrence of pixel unevenness due to non-simultaneity. be able to.

  In the first embodiment, it is assumed that the present invention is applied to a solid-state imaging device having a global shutter function. However, application to a solid-state imaging device having a global shutter function is merely an example. That is, the present invention is also applicable to a solid-state imaging device having a rolling shutter (focal plane shutter) function for setting the start and end of exposure by sequentially scanning each pixel 20 of the pixel array unit 12 for each pixel row.

  A solid-state imaging device having a rolling shutter function does not require simultaneous operation (simultaneity) of all pixels like a solid-state imaging device having a global shutter function, but needs to operate at a timing determined for each pixel row. Therefore, in the variable delay circuits 331-1 to 331-m, the pixel drive signals vbD1 to vbDm having predetermined timings with respect to the pixel drive signals vb1 to vbm output from the row scanning unit 13 including the delay described above. The timing may be adjusted so that

[2-2. Example 2]
In the case of the first embodiment, it is necessary to store in advance the predicted value predicted by simulation or the like, that is, the code CODE1 [x: 1] to CODEm [x: 1] of the delay amount in the vertical direction in the nonvolatile memory 332 in advance. is there. As described above, when the delay amount is stored in advance in the nonvolatile memory 332, a desired correction result may not be obtained if the actually measured value is greatly deviated from the expected value due to variations among chips.

  Therefore, the second embodiment described below employs a configuration with a monitor feedback function added. That is, in the second embodiment, a monitor circuit is added to the configuration of FIG. 5 to enable monitoring of signal transition timing at the manufacturing stage, and an adjustment code can be written to the nonvolatile memory 332 according to the monitored actual value. It has become a structure. Since correction is based on actual values rather than expected values, tuning correction (timing correction) in the vertical and horizontal directions can be performed with higher accuracy than when the monitor feedback function is not provided. Further, it can cope with correction of variation for each chip.

  FIG. 7 is a system configuration diagram illustrating an outline of a system configuration of the solid-state imaging device according to the second embodiment of the present invention. 7, parts that are the same as those in FIG. 5 are given the same reference numerals, and redundant descriptions are omitted.

  The solid-state imaging device 30B according to the second embodiment has a configuration including switches 36 to 38 and selectors 39 and 40 in addition to the components shown in FIG. The switch 36 is connected between one of the variable delay circuits 331-1 to 331-m, for example, the output node N1 of the delay circuit 331-1 and the monitor pad (terminal) 41. The signal SIGD1 is supplied to the monitor pad 41 via the switch 41 as a reference signal for monitoring the reference timing.

  The selector 39 has two input terminals connected to the output nodes N2 and N3 of the variable delay circuits 331-2 and 331-3, respectively, and responds to a select signal SELa supplied from the measurement system (for example, tester) 60 through the select pad. To select one of the two inputs. The switch 37 is connected between the output terminal of the selector 39 and the monitor pad 43.

  The selector 40 has two input terminals connected to the output nodes N4 and N5 of the variable delay circuits 331-m-1 and 331-m, respectively, and two inputs according to the select signal SELb supplied from the measurement system 60 through the select pad 44. Select one of the following. The switch 38 is connected between the output terminal of the selector 40 and the monitor pad 45.

  The switches 36 to 38 are controlled to be turned on (closed) / off (opened) by an enable signal EN supplied from the measurement system 60 through the enable pad 46. Then, the signals SIGD2 and SIGD3 are applied to the monitor pad 43 via the selector 39 and the switch 37 for monitoring (observation) the timing shift in the vertical direction or the horizontal direction with respect to the reference value (reference signal). Similarly, signals SIGDm−1 and SIGDm are applied to the monitor pad 45 via the selector 40 and the switch 38.

  The nonvolatile memory 332 is provided with code data DIN corresponding to the delay amount to be stored and held for each pixel row or pixel column from the measurement system 60 through the data input pad 47. Further, a control signal CNT, an address signal ADD, and a test signal TEST are appropriately supplied from the measurement system 60 to the nonvolatile memory 332 through the pads 48, 49, and 50.

  Here, wiring is performed so that the distance between the output nodes N1 to 36, the distance between the output nodes N2 and 37, and the distance between the output nodes N3 and 37 are equal. In addition, wiring is performed so that the distance between the switch 36 and the monitor pad 41 is equal to the distance between the switch 37 and the monitor pad 43. It is desirable that the timing delay after the output nodes N1 to N3 is made the same between the signals SIGD1 to SIGD3 by such wiring.

  Moreover, it is desirable that each of the wirings be as short as possible from the viewpoint of reducing the load capacity of the signals SIGD1 to SIGD3. Further, it is desirable to insert a circuit having the same number of stages as the selector 39 between the switch 36 and the variable delay circuit 331-1 in order to adjust the number of stages. In this example, it is assumed that the timing shift after the monitor pads 41 and 43 does not occur due to the calibration of the measurement system 60.

  In the above description, only the signals SIGD1 to SIGD3 have been described as representatives. However, the monitor feedback function is not limited to the signals SIGD1 to SIGD3, and is described by replacing any signal of the signals SIGD1 to SIGDm. is there.

  Further, the number of inputs of the selectors 39 and 40 is not limited to 2 inputs, and can be increased to 3 inputs or more as long as the above principle of equal length wiring is observed. In this case, since the number of signals to be monitored increases, more accurate adjustment is possible.

  Further, the number of monitor pads 43 and 45 can be further increased within the allowable range of the number of pads (terminals / pins). In this case, since the number of simultaneous observations (monitors) increases, the test time can be shortened compared with the case where the number of monitor pads is two. Further, an increase in the number of monitor pads has an advantage that equal-length wiring within the adjustment circuit 33 is facilitated.

(Monitor feedback function)
Next, the monitor feedback function of the solid-state imaging device 30B according to the second embodiment having the above-described configuration will be described. This monitor feedback function is realized by activating the signals SIGD1 to SIGDm at the time of the manufacturing test and monitoring the transition timing of the signals output from the monitor pads 43 and 45 by the measurement system 60.

  Specifically, the delay amount of the variable delay circuits 331-2 to 331 -m is changed, and the measurement system 60 obtains a code in which the transition timings of the signals SIGD 2 to SIGDm are aligned with the transition timing of the signal SIGD 1. The code obtained in this way is written from the measurement system 60 to the nonvolatile memory 332 via the data input pad 47. Thereby, the correction | amendment by the feedback from the measurement system 60 is attained.

(Monitor feedback tuning process)
Hereinafter, an example of the tuning process of the monitor feedback during the manufacturing test will be specifically described with reference to the flowchart of FIG. This series of processing is executed under the control of the control unit of the measurement system 60, for example, a microcomputer.

  First, the test signal TEST given via the pad 50 is turned ON (active) (step S11), the enable signal EN given via the pad 46 is turned ON (step S12), and then initial values are set to i and j ( i = 1, j = 1) (step S13). Then, the signal SIGDj corresponding to the j-th row is selected by the selector (39, 40) (step S14).

  Next, CODE [i], which is a code of the variable delay circuits 331-2 to 331-m, is directly input from the pad 47 (step S15). Then, the solid-state imaging device 30B is operated (step S16). As the solid-state imaging device 30B operates, the signals SIG1 to SIGm are collectively activated. In this state, the time difference between the activation timings of the signals SIGD1 and SIGDj output from the monitor pads 41 and 43 (45) is measured (step S17).

  Next, it is determined whether i = x (x is the number of bits of the code / the number of delay adjustments), that is, whether CODE [i] has been input for all codes (step S18). At this time, if i ≠ x, the process of i = i + 1 is executed (step S19). Then, the process returns to step S15 to input CODE [i + 1] for other codes.

  If i = x in step S18, the code (i value) when the time difference between the activation timings of the signals SIGD1 and SIGDj is minimized is written in the nonvolatile memory 332 (step S20). At this time, the location of the nonvolatile memory 332 to which the code is written is designated by the address signal ADD and the control signal CNT.

  Next, it is determined whether or not j = m (n), that is, whether or not tuning processing has been performed for all rows (all columns) (step S21). If j ≠ m (n), j = j + 1 The process is executed (step S22). Then, the process returns to step S14 and the tuning process is performed for other rows (columns). If j = m (n), the test signal TEST is turned off (step S23), and the series of tuning processes is terminated.

  The series of tuning processes described above is an example, and the present invention is not limited to this example. That is, in the above example, both the code and the row (column) proceed from the smaller side to the larger side. However, as long as all the codes and all the rows (all columns) are checked, any progress may be used. Shall.

  Incidentally, when the product is used, a code written in the nonvolatile memory 332 is loaded as CODE [i] into the variable delay circuits 331-1 to 331 -m when the product is turned on. The delay amounts of the variable delay circuits 331-1 to 331-m are set by the loaded CODE [i].

  Specifically, as shown in the flowchart of FIG. 9, in response to turning on the power (step S31), the code is loaded from the nonvolatile memory 332 as CODE [i] (step S32). Thus, the delay amounts of the variable delay circuits 331-1 to 331-m are set by CODE [i]. As a result, the timing adjustment can be individually performed on the signals SIG1 to SIGm output from the repetitive array pattern circuit 31.

  As described above, according to the solid-state imaging device 30B according to the second embodiment, the signal transition timing in the manufacturing stage is monitored, and the adjustment code is written in the nonvolatile memory 332 according to the actual measurement value. Tuning correction by actual measurement value can be realized. The tuning correction based on the actually measured values enables the vertical and horizontal timing corrections to be performed with higher accuracy than when the monitor feedback function is not provided, and can also cope with the correction of variations from chip to chip.

[2-3. Example 3]
In the second embodiment, the adjustment circuit 33 is connected to the measurement system (tester) 60 via many pins (pads / terminals), so that the number of pins is limited. When the number of pins is limited to a number smaller than the number of rows or columns, it is difficult to connect the number of rows and the number of columns to the pins for external monitoring with equal-length wiring. For this reason, even if partial monitor feedback in the row direction and column direction is possible, monitor feedback for the number of rows and the number of columns becomes difficult.

  On the other hand, in the third embodiment, a measurement circuit 60 is not provided outside, but a BIST (built-in self test) in which a test circuit (measurement circuit) is incorporated in the adjustment circuit 33 instead of the measurement system 60. Built-in self-test) configuration.

  FIG. 10 is a system configuration diagram illustrating an outline of a system configuration of the solid-state imaging device according to the third embodiment of the present invention. 10, parts that are the same as those in FIG. 5 are given the same reference numerals, and redundant descriptions are omitted.

  In the solid-state imaging device 30C according to the third embodiment, the adjustment circuit 33 includes switches 71-1 to 71-m and test circuits (BIST) 72 corresponding to the number of rows (number of columns) in addition to the components illustrated in FIG. It has become. The switches 71-1 to 71-m are connected between the output nodes N11-1 to N11-m of the variable delay circuits 331-1 to 331-m and the test terminals of the test circuit 72. On / off control is performed by the output enable signal EN.

  The test circuit 72, which is a BIST, basically has the same function as the measurement system 60 of the second embodiment. That is, by incorporating the test circuit 72 in the adjustment circuit 33, the monitor feedback tuning process can be performed in the adjustment circuit 33. By adopting the BIST configuration, it is possible to eliminate the restriction on the number of pins, and therefore monitor feedback for the number of rows and the number of columns becomes possible.

  Even in the BIST configuration in which the test circuit 72 is incorporated in the adjustment circuit 33, it is sufficient to reduce the number of monitors and reduce the circuit scale by interposing a selector as in the case of the second embodiment. It is possible.

[2-4. Example 4]
In the first embodiment described above, the row scanning unit 13 is formed on the same first chip 32 as the pixel array unit 12. On the other hand, the fourth embodiment employs a configuration in which the row scanning unit 13 is formed on a substrate (chip) different from the pixel array unit 12.

  FIG. 11 is a system configuration diagram illustrating an outline of a system configuration of a solid-state imaging apparatus according to Embodiment 4 of the present invention. In FIG. 11, the same parts as those in FIG.

  The solid-state imaging device 30D according to the fourth embodiment has a configuration in which three chips (substrates) 32A, 34, and 32B are sequentially stacked, and the chips 32A, 34, and 32B are electrically connected to each other through a three-dimensional connection. ing.

Specifically, the pixel array unit 12 is formed on the chip 32A. The adjustment circuit 33 includes, for example, a number of adjustment units 33-1 to 33-n corresponding to the pixel rows 12-1 to 12-n of the pixel array unit 12, and is formed on a chip 34 different from the chip 32A. Here, the chip 34 is stacked on the side opposite to the side that captures incident light with respect to the chip 32A.

In stacking the chip 32A and the chip 34, it is preferable to stack so that each of the adjustment units 33-1 to 33-n is located immediately below each of the pixel rows 12-1 to 12-n. Each of the pixel rows 12-1 to 12-n on the chip 32A and each of the adjustment units 33-1 to 33-n on the chip 34 are three-dimensionally connected by the connection unit 35A with a 1: 1 correspondence. Connected.

For example, the number of scanning units 13 corresponding to the adjustment units 33-1 to 33-n of the adjustment circuit 33, that is, the number of scanning units 13-1 corresponding to the pixel rows 12-1 to 12-n of the pixel array unit 12 is provided. Are formed in a chip 32B different from the chip 32A and the chip 34.

  In stacking the chip 34 and the chip 32B, it is preferable to stack the scanning units 13-1 to 13-n so that each of the scanning units 13-1 to 13-n is positioned directly below each of the adjusting units 33-1 to 33-n. Each of the adjustment units 33-1 to 33-n on the chip 34 and each of the scanning units 13-1 to 13-n on the chip 32B are three-dimensionally connected by the connection unit 35B with a 1: 1 correspondence. Is done.

  Each of the adjustment units 33-1 to 33-n basically has the same configuration as the adjustment circuit 33 in FIG. However, the non-volatile memory 332 may be configured to be provided in common for the entire adjustment units 33-1 to 33-n or for each of the plurality.

Here, the reason why the row scanning unit 13 is configured by the number of scanning units 13-1 to 13-n corresponding to the pixel rows 12-1 to 12-n is as follows.

Here, the scanning unit 13-1 to 13-n pixel rows 12-1 to 12-n and 1: 1 was the provided with the correspondence between the pixel rows 12-1 to 12-n by a plurality of rows It is also possible to employ a configuration in which one scanning unit 13-i is provided for each set.

  Similarly, the adjustment units 33-1 to 33-n of the adjustment circuit 33 do not necessarily have a 1: 1 correspondence with the scanning unit 13-i, and a plurality of scanning units 13-i are grouped. It is also possible to employ a configuration in which one adjustment unit 33-j is provided for each group.

  As described above, according to the solid-state imaging device 30D according to the fourth embodiment, the three chips 32A, 34, and 32B are sequentially stacked, and the chips 32A, 34, and 32B are electrically connected to each other through a three-dimensional connection. By adopting such a configuration, the following operational effects can be obtained.

  That is, the activation of the pixel drive signals vb1 to vbm output from each of the scanning units 13-1 to 13-n of the row scanning unit 13 by the above-described tuning correction by the adjusting units 33-1 to 33-n of the adjustment circuit 33. / Deactivation timing can be adjusted. By this timing adjustment, the activation / deactivation timings of the pixel drive signals vbD1 to vbDm input to the pixel array unit 12 can be synchronized, for example.

Further, the chips 32A, 34, and 32B are stacked such that each of the scanning units 13-1 to 13-n is positioned directly below each of the pixel rows 12-1 to 12-n via the chip 34. In addition, the distance between each pixel 20 in the pixel rows 12-1 to 12-n and the scanning units 13-1 to 13-n that drive the pixels 20 is shortened. Specifically, as shown in FIG. 1, the distance is extremely shorter than the distance by the pixel drive line 17 that transmits the pixel drive signals vb <b> 1 to vbm from, for example, one side of the pixel array unit 12.

  Accordingly, since the pixel drive signals vb1 to vbm are transmitted by the pixel drive line 17, it is possible to suppress propagation delay and waveform dullness caused by parasitic capacitance or the like attached to the pixel drive line 17, so that the pixel drive The signals vb1 to vbm are transmitted to the pixel 20 without delay.

Also, because they provide a scanning unit 13-1 to 13-n, for example, in each pixel row 12-1 to 12-n, a pixel driving capability of the scanning unit 13-1 to 13-n, pixel rows 12-1 ˜12-n can be reduced as compared with the case where one scanning unit is provided. Thereby, the breakdown voltage of the transistors constituting the scanning units 13-1 to 13-n can be improved.

In addition, the scanning units 13-1 to 13-n that generate a large amount of heat during pixel driving are formed on a chip 32B that is different from the chip 32A and are separated from the pixel rows 12-1 to 12-n. Therefore, it is possible to suppress the influence of the heat generated in the scanning units 13-1 to 13-n on the pixel 20. As a result, deterioration in image quality due to heat generation can be suppressed as much as possible, and thus a high-quality captured image can be obtained.

  In the fourth embodiment, the case where the row scanning unit 13 is used as the repetitive array pattern circuit 31 is described as an example, but the present invention is not limited to the row scanning unit 13. That is, even when the column processing unit 14 (comparator unit 141 and counter unit 142), the column scanning unit 15, and a constant current source connected to one end of the vertical signal line 18 for each pixel column are used. In addition, it is possible to obtain the same effect as when the row scanning unit 13 is used.

[2-5. Modified example]
In the first to fourth embodiments, the variable delay circuits 331-1 to 331 -m and the non-volatile memory 332 are formed on the same chip 34. It is also possible to adopt a configuration in which these are electrically connected by a three-dimensional connection.

  Here, CODE1 to CODEm, which are outputs from the nonvolatile memory 332, are signals of m (number of rows / number of columns when n) × x (number of delay adjustments). Therefore, it is effective in reducing the wiring area that the portions transmitting CODE1 to CODEm are also set as three-dimensional connection portions and the variable delay circuits 331-1 to 331 -m and the nonvolatile memory 332 are separated into different chips. .

  FIG. 12 shows an outline of the system configuration of the solid-state imaging device according to this modification. As shown in FIG. 12, variable delay circuits 331-1 to 331 -m are formed on the first chip 32 side, and the variable delay circuits 331-1 to 331 -m and the non-volatile memory on the second chip 34 side are formed. 332 is electrically connected through the connection portion 35 of a three-dimensional connection. According to this configuration, although the number of connection points by the connection unit 35 is the number of rows × the number of CODEs, the wiring length of the node to be adjusted can be reduced as much as possible.

  In the second and third embodiments, the monitor switches 36 to 38 and 71-1 to 71-m are present in the adjustment circuit 33. The monitor switches are also configured to be three-dimensionally connected. It is also possible to take. Thus, separating the variable delay circuits 331-1 to 331 -m, the nonvolatile memory 332, and the monitor switch portion is effective in reducing the load capacity caused by the monitor switch.

<3. Other application examples>
In the embodiment described above, the case where the present invention is applied to a CMOS image sensor (CMOS type solid-state imaging device) has been described as an example, but the present invention is not limited to application to a CMOS image sensor. That is, the present invention is applicable to all solid-state imaging devices in which unit pixels that detect electric charges according to the amount of incident incident light as physical quantities and output them as electric signals are arranged in a matrix.

  Furthermore, the present invention is not limited to application to a solid-state imaging device that detects the distribution of the amount of incident light of visible light and captures it as an image, but is a solid that captures the distribution of the incident amount of infrared rays, X-rays, or particles as an image. The present invention can also be applied to an imaging device. In a broad sense, the present invention can be applied to all solid-state imaging devices (physical quantity distribution detection devices) such as a fingerprint detection sensor that senses other physical quantity distributions such as pressure and capacitance and captures images as images.

  In addition, the present invention is not limited to application to a solid-state imaging device that sequentially scans each unit pixel of the pixel array unit in units of rows and reads a pixel signal from each unit pixel. That is, the present invention is also applied to an XY address type solid-state imaging device that arbitrarily selects each unit pixel of the pixel array unit in units of pixels and reads out pixel signals from the selected unit pixels in units of pixels. Is possible.

  Note that the solid-state imaging device may have a form formed as a single chip, or a module-like form having an imaging function in which a pixel array unit and a signal processing unit or an optical system are packaged together. Also good.

<4. Electronic equipment>
The solid-state imaging device according to the present invention can be mounted and used in all electronic devices that use a solid-state imaging device for an image capturing unit (photoelectric conversion unit). Examples of the electronic device include an imaging device (camera system) such as a digital still camera and a video camera, a portable terminal device having an imaging function such as a mobile phone, and a copying machine using a solid-state imaging device for an image reading unit. Note that a camera module mounted on an electronic device may be an imaging device.

(Imaging device)
FIG. 13 is a block diagram illustrating an example of a configuration of, for example, an imaging apparatus that is one of electronic apparatuses according to the present invention. As shown in FIG. 13, an imaging apparatus 100 according to the present invention includes an optical system including a lens group 101 and the like, an imaging element 102, a DSP circuit 103 as a camera signal processing unit, a frame memory 104, a display apparatus 105, and a recording apparatus 106. The operation system 107 and the power supply system 108 are included. The DSP circuit 103, the frame memory 104, the display device 105, the recording device 106, the operation system 107, and the power supply system 108 are connected to each other via a bus line 109.

  The lens group 101 captures incident light (image light) from a subject and forms an image on the imaging surface of the imaging element 102. The imaging element 102 converts the amount of incident light imaged on the imaging surface by the lens group 101 into an electrical signal in units of pixels and outputs the electrical signal. As the imaging element 102, the solid-state imaging device according to the above-described embodiment can be used.

  The display device 105 includes a panel type display device such as a liquid crystal display device or an organic EL (electroluminescence) display device, and displays a moving image or a still image captured by the image sensor 102. The recording device 106 records a moving image or a still image captured by the image sensor 102 on a recording medium such as a video tape or a DVD (Digital Versatile Disc).

  The operation system 107 issues operation commands for various functions of the imaging apparatus under operation by the user. The power supply system 108 appropriately supplies various power supplies serving as operation power supplies for the DSP circuit 103, the frame memory 104, the display device 105, the recording device 106, and the operation system 107 to these supply targets.

  Such an imaging apparatus 100 is applied to a camera module for a mobile device such as a video camera, a digital still camera, or a mobile phone. By using the solid-state imaging device according to the above-described embodiment as the imaging element 102 in the imaging device 100, the following operational effects can be obtained.

  That is, according to the solid-state imaging device according to the above-described embodiment, it is possible to perform tuning correction of multiple rows and multiple columns corresponding to the number of rows, the number of columns, or the like, so that the vertical direction and the horizontal direction The occurrence of shading can be suppressed. Therefore, by using the solid-state imaging device as the imaging element 102, it is possible to provide a captured image with good image quality without occurrence of shading.

  DESCRIPTION OF SYMBOLS 10 ... CMOS image sensor, 11 ... Semiconductor substrate (chip), 12 ... Pixel array part, 13 ... Row scanning part, 14 ... Column processing part, 15 ... Column scanning part, 17 ... Pixel drive line, 18 ... Vertical signal line, 20 ... Unit pixel, 21 ... Photodiode, 22 ... Transfer transistor, 23 ... Reset transistor, 24 ... Amplification transistor, 25 ... Selection transistor, 26 ... Floating diffusion part (FD part), 30, 30A, 30B, 30C, 30D ... Solid-state imaging device 31... Repeated array pattern circuit 32, 32A, 32B... First chip 33... Adjustment circuit 34 34. Second chip 35, 35A, 35B. ... Variable delay circuit, 332 ... Nonvolatile memory

Claims (12)

A first chip in which a pixel array unit in which pixels including photoelectric conversion units are arranged in a matrix is formed;
A second chip electrically connected to the first chip;
With
A row scanning unit that scans each pixel of the pixel array unit is formed on the first chip or the second chip,
At least a part of the adjustment circuit that individually adjusts the timing of the signal of each unit circuit of the row scanning unit is formed on a chip different from the chip on which the row scanning unit is formed,
The row scanning unit is connected to the pixel array unit via an adjustment circuit;
Stacked solid-state imaging device. The row scanning unit is composed of a decoder unit and a driver unit,
The driver portion is formed on the first chip.
The stacked solid-state imaging device according to claim 1. The unit circuit of the row scanning unit is provided with a 1: 1 correspondence with the pixel row of the pixel array unit.
Stack type solid-state imaging device according to claim 1 or 2. The unit circuit of the row scanning unit is provided for each set of a plurality of pixel rows of the pixel array unit.
The stacked solid-state imaging device according to claim 1. The first chip and the second chip are electrically connected by a connection portion having a three-dimensional connection configuration.
The stacked solid-state imaging device according to any one of claims 1 to 4. A non-volatile memory is provided and has a third chip stacked on the first chip and the second chip.
The stacked solid-state imaging device according to any one of claims 1 to 5. Each of the first chip and the second chip and the third chip are electrically connected by a connection portion having a three-dimensional connection configuration.
The stacked solid-state imaging device according to claim 6. The adjustment circuit includes a nonvolatile memory and is provided in the third chip.
The stacked solid-state imaging device according to claim 6 or 7. The adjustment circuit synchronizes by adjusting the timing of the pixel drive signal output from each unit circuit of the row scanning unit,
The stacked solid-state imaging device according to claim 8. The adjustment circuit has a plurality of variable delay circuits with variable delay amounts.
The stacked solid-state imaging device according to claim 9. The adjustment circuit adjusts the timing of signals related to individual unit circuits of the row scanning unit by adjusting the delay amount of the plurality of variable delay circuits based on the delay information stored in the nonvolatile memory.
The stacked solid-state imaging device according to claim 10. A first chip in which a pixel array unit in which pixels including photoelectric conversion units are arranged in a matrix is formed;
A second chip electrically connected to the first chip;
With
A row scanning unit that scans each pixel of the pixel array unit is formed on the first chip or the second chip,
At least a part of the adjustment circuit that individually adjusts the timing of the signal of each unit circuit of the row scanning unit is formed on a chip different from the chip on which the row scanning unit is formed,
The row scanning unit is connected to the pixel array unit via an adjustment circuit;
An electronic apparatus having a stacked solid-state imaging device.

Images