JP5704563B2 - Photoelectric conversion element and solar cell - Google Patents
Photoelectric conversion element and solar cell Download PDFInfo
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- JP5704563B2 JP5704563B2 JP2011075391A JP2011075391A JP5704563B2 JP 5704563 B2 JP5704563 B2 JP 5704563B2 JP 2011075391 A JP2011075391 A JP 2011075391A JP 2011075391 A JP2011075391 A JP 2011075391A JP 5704563 B2 JP5704563 B2 JP 5704563B2
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- photoelectric conversion
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- conversion element
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Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Photovoltaic Devices (AREA)
Description
本発明は、光電変換素子及び太陽電池に関し、詳しくはバルクへテロ型有機光電変換素子及びそれを含む有機薄膜太陽電池に関する。 The present invention relates to a photoelectric conversion element and a solar cell, and particularly relates to a bulk hetero organic photoelectric conversion element and an organic thin film solar cell including the same.
近年の化石エネルギーの高騰によって、自然エネルギーから直接電力を発電できるシステムが求められており、単結晶・多結晶・アモルファスのSiを用いた太陽電池、GaAsやCIGSなどの化合物系の太陽電池、あるいは色素増感型光電変換素子などが提案・実用化されている。 Due to the recent rise in fossil energy, a system that can generate electric power directly from natural energy has been demanded. Solar cells using monocrystalline, polycrystalline, or amorphous Si, compound-based solar cells such as GaAs and CIGS, or Dye-sensitized photoelectric conversion elements have been proposed and put into practical use.
これらの太陽電池は、高速のキャリア移動度を有しているが、発電するコストが化石燃料を用いて発電・送電される電気の価格よりも高いことが普及において難点とされてきた。 Although these solar cells have a high carrier mobility, it has been a difficult point in the spread that the cost of power generation is higher than the price of electricity generated and transmitted using fossil fuels.
化石燃料による発電コストよりも低コストな太陽電池として、透明電極と対電極との間に電子供与体層(π電子ドナー層)と電子受容体層(π電子アクセプター層)を設けた光電変換素子を含む太陽電池が提案されている(非特許文献1参照)。 Photovoltaic conversion element with an electron donor layer (π electron donor layer) and an electron acceptor layer (π electron acceptor layer) provided between a transparent electrode and a counter electrode as a solar cell that costs less than fossil fuel power generation costs Has been proposed (see Non-Patent Document 1).
しかしながら、この太陽電池は、内部量子効率が低く、より高い光電変換効率を有する太陽電池が求められている。 However, this solar cell has a low internal quantum efficiency, and a solar cell having higher photoelectric conversion efficiency is demanded.
本発明は、高いキャリア移動度を有する光電変換素子、該素子を用いた光電変換効率の優れた薄膜太陽電池を提供することを目的とする。 An object of this invention is to provide the photoelectric conversion element which has high carrier mobility, and the thin film solar cell excellent in the photoelectric conversion efficiency using this element.
本発明者らは、上記問題点に鑑み鋭意検討した結果、一般式(I)のフタロシアニン誘導体が高速キャリア移動度を有し、光電変換素子のπ電子ドナーとして優れていることを見出した。 As a result of intensive studies in view of the above problems, the present inventors have found that the phthalocyanine derivative of the general formula (I) has high-speed carrier mobility and is excellent as a π electron donor of a photoelectric conversion element.
すなわち本発明は、以下のバルクへテロ型有機光電変換素子及びそれを含む有機薄膜太陽電池を提供するものである。
項1. バルクへテロ型有機光電変換素子において活性層がポリチオフェン誘導体とC60誘導体の混合物である系に第3の成分を加えてなることを特徴とするバルクへテロ型有機光電変換素子。
項2. 第3の成分がフタロシアニン誘導体であることを特徴とする項1に記載のバルクへテロ型有機光電変換素子。
項3. 第3の成分が液晶性有機半導体であることを特徴とする項1に記載のバルクへテロ型有機光電変換素子。
項4. 第3の成分が液晶性フタロシアニン誘導体であることを特徴とする項1〜3のいずれかに記載のバルクへテロ型有機光電変換素子。
項5. 活性層がその溶液の塗布により形成されることを特徴とする項1〜4のいずれかに記載のバルクへテロ型有機光電変換素子。
項6. 活性層を構成する成分の一方がポリ(3-アルキルチオフェン)であることを特徴とする項1〜5のいずれかに記載のバルクへテロ型有機光電変換素子。
項7. 活性層を構成する成分の一方がC60に適当な置換基を有する構造であることを特徴とする項1〜6のいずれかに記載のバルクへテロ型有機光電変換素子。
項8. C60誘導体がPCBMであることを特徴とする項7に記載のバルクへテロ型有機光電変換素子。
項9. 活性層を構成する成分の一方がポリ(3-ヘキシルチオフェン)であることを特徴とする項6に記載のバルクへテロ型有機光電変換素子。
項10. 活性層を構成する第3の成分がフタロシアニン環の1,4,8,11,15,18,22,25位にアルキル基を持つことを特徴とする項2に記載のバルクへテロ型有機光電変換素子。
項11. アルキル基がヘキシル基であることを特徴とする項10に記載のバルクへテロ型有機光電変換素子。
項12. 項1〜11のいずれかに記載のバルクへテロ型有機光電変換素子を含む有機薄膜太陽電池。
That is, this invention provides the following bulk hetero type | mold organic photoelectric conversion elements and the organic thin-film solar cell containing the same.
Item 11. Item 11. The bulk hetero organic photoelectric conversion device according to
Item 12. Item 12. An organic thin-film solar cell comprising the bulk hetero-type organic photoelectric conversion device according to any one of
本発明のバルクへテロ型有機光電変換素子及びそれを含む有機薄膜太陽電池は、高い光電変換効率を実現できる。 The bulk hetero type organic photoelectric conversion element of the present invention and the organic thin film solar cell including the same can realize high photoelectric conversion efficiency.
本発明の光電変換素子の活性層は、ポリチオフェン誘導体とC60誘導体の混合物である系に第3の成分を加えてなる。 The active layer of the photoelectric conversion element of the present invention is obtained by adding a third component to a system that is a mixture of a polythiophene derivative and a C60 derivative.
ポリチオフェン誘導体としては、ポリ3−ヘキシルチオフェン(P3HT)等のポリチオフェン及びそのオリゴマー、またはTechnical Digest of the International PVSEC−17, Fukuoka, Japan, 2007, P1225に記載の重合性基を有するようなポリチオフェン、Nature Material,(2006)vol.5,p328に記載のポリチオフェン−チエノチオフェン共重合体、WO2008/000664号に記載のポリチオフェン−ジケトピロロピロール共重合体、Adv Mater,2007p4160に記載のポリチオフェン−チアゾロチアゾール共重合体,Nature Mat.vol.6(2007),p497に記載のPCPDTBT等のようなポリチオフェン共重合体などが挙げられる。好ましいポリチオフェン誘導体は、ポリ3−ヘキシルチオフェン(P3HT)である。 Examples of the polythiophene derivative include polythiophene such as poly-3-hexylthiophene (P3HT) and oligomers thereof, or polythiophene having a polymerizable group described in Technical Digest of the International PVSEC-17, Fukuoka, Japan, 2007, P1225, N Material, (2006) vol. 5, p328, polythiophene-thienothiophene copolymer, WO2008 / 000664, polythiophene-diketopyrrolopyrrole copolymer, Adv Mater, 2007 p4160, polythiophene-thiazolothiazole copolymer, Nature Mat. vol. 6 (2007), p497, and a polythiophene copolymer such as PCPDTBT. A preferred polythiophene derivative is poly-3-hexylthiophene (P3HT).
C60またはその誘導体としては、フラーレン60、[6,6]−フェニルC61−ブチリックアシッドメチルエステル(PCBM)、[6,6]−フェニルC61−ブチリックアシッド−nブチルエステル(PCBnB)、[6,6]−フェニルC61−ブチリックアシッド−イソブチルエステル(PCBiB)、[6,6]−フェニルC61−ブチリックアシッド−nヘキシルエステル(PCBH)、Adv.Mater.,vol.20(2008),p2116等に記載のbis−PCBM、特開2006−199674号公報等のアミノ化フラーレン、特開2008−130889号公報等のメタロセン化フラーレン、米国特許第7329709号明細書等の環状エーテル基を有するフラーレン等のような、置換基を有してより溶解性が向上したフラーレン誘導体が挙げられる。 C60 or its derivatives include fullerene 60, [6,6] -phenyl C61-butyric acid methyl ester (PCBM), [6,6] -phenyl C61-butyric acid-nbutyl ester (PCBnB), [6 , 6] -phenyl C61-butyric acid-isobutyl ester (PCBiB), [6,6] -phenyl C61-butyric acid-n-hexyl ester (PCBH), Adv. Mater. , Vol. 20 (2008), p2116, etc., aminated fullerenes such as JP-A 2006-199674, metallocene fullerenes such as JP-A 2008-130889, and cyclics such as US Pat. No. 7,329,709. Examples include fullerene derivatives having a substituent and having improved solubility, such as fullerene having an ether group.
第3の成分としては、π電子ドナー、π電子アクセプターの1種又は2種以上であってもよい。π電子ドナーとしては、例えば、アントラセン、テトラセン、ペンタセン、ヘキサセン、ヘプタセン、クリセン、ピセン、フルミネン、ピレン、ペロピレン、ペリレン、テリレン、クオテリレン、コロネン、オバレン、サーカムアントラセン、ビスアンテン、ゼスレン、ヘプタゼスレン、ピランスレン、ビオランテン、イソビオランテン、サーコビフェニル、アントラジチオフェン等の化合物、ポルフィリンや銅フタロシアニン、テトラチアフルバレン(TTF)−テトラシアノキノジメタン(TCNQ)錯体、ビスエチレンテトラチアフルバレン(BEDTTTF)−過塩素酸錯体、及びこれらの誘導体や前駆体などの縮合多環芳香族化合物又はその誘導体が挙げられる。該誘導体の例としては、国際公開第03/16599号パンフレット、国際公開第03/28125号パンフレット、米国特許第6,690,029号明細書、特開2004−107216号公報等に記載の置換基をもったペンタセン誘導体、米国特許出願公開第2003/136964号明細書等に記載のペンタセンプレカーサ、J.Amer.Chem.Soc.,vol127.No14.4986、J.Amer.Chem.Soc.,vol.123、p9482、J.Amer.Chem.Soc.,vol.130(2008)、No.9、2706等に記載のトリアルキルシリルエチニル基で置換されたアセン系化合物、ポリピロール及びそのオリゴマー、ポリアニリン、ポリフェニレン及びそのオリゴマー、ポリフェニレンビニレン及びそのオリゴマー、ポリチエニレンビニレン及びそのオリゴマー、ポリアセチレン、ポリジアセチレン、ポリシラン、ポリゲルマン等のσ共役系ポリマー、チオフェン6量体であるα−セクシチオフェンα,ω−ジヘキシル−α−セクシチオフェン、α,ω−ジヘキシル−α−キンケチオフェン、α,ω−ビス(3−ブトキシプロピル)−α−セクシチオフェンなどのオリゴマーが挙げられる。 The third component may be one or more of a π electron donor and a π electron acceptor. Examples of the π-electron donor include anthracene, tetracene, pentacene, hexacene, heptacene, chrysene, picene, fluorene, pyrene, peropyrene, perylene, terylene, quaterylene, coronene, obalene, circumcamanthracene, bisanthene, xethrene, heptazesulene, pyranthrene, violanthene. , Compounds such as isoviolanthene, cacobiphenyl, anthradithiophene, porphyrin, copper phthalocyanine, tetrathiafulvalene (TTF) -tetracyanoquinodimethane (TCNQ) complex, bisethylenetetrathiafulvalene (BEDTTTTF) -perchloric acid Examples include complexes, and condensed polycyclic aromatic compounds such as derivatives and precursors thereof or derivatives thereof. Examples of the derivative include substituents described in International Publication No. 03/16599, International Publication No. 03/28125, US Pat. No. 6,690,029, Japanese Patent Application Laid-Open No. 2004-107216, and the like. A pentacene derivative described in U.S. Patent Application Publication No. 2003/136964 and the like; Amer. Chem. Soc. , Vol127. No. 14.4986, J. MoI. Amer. Chem. Soc. , Vol. 123, p9482; Amer. Chem. Soc. , Vol. 130 (2008), no. 9, 2706 etc. substituted acene-based compounds substituted with a trialkylsilylethynyl group, polypyrrole and oligomers thereof, polyaniline, polyphenylene and oligomers thereof, polyphenylene vinylene and oligomers thereof, polythienylene vinylene and oligomers thereof, polyacetylene, polydiacetylene , Conjugated polymers such as polysilane and polygermane, α-sexual thiophene α, ω-dihexyl-α-sexual thiophene, α, ω-dihexyl-α-kinkethiophene, α, ω-bis ( And oligomers such as 3-butoxypropyl) -α-sexithiophene.
π電子アクセプターとしては、C60誘導体以外のフラーレン、オクタアザポルフィリン、π電子ドナーのパーフルオロ体(パーフルオロペンタセンやパーフルオロフタロシアニン等)、ナフタレンテトラカルボン酸無水物、ナフタレンテトラカルボン酸ジイミド、ペリレンテトラカルボン酸無水物、ペリレンテトラカルボン酸ジイミド等の芳香族カルボン酸無水物やそのイミド化物を骨格として含む高分子化合物、例えばフラーレンC70、フラーレンC76、フラーレンC78、フラーレンC84、フラーレンC240、フラーレンC540、ミックスドフラーレン、フラーレンナノチューブ、多層ナノチューブ、単層ナノチューブ、ナノホーン(円錐型)等、およびこれらの一部が水素原子、ハロゲン原子、置換または無置換のアルキル基、アルケニル基、アルキニル基、アリール基、ヘテロアリール基、シクロアルキル基、シリル基、エーテル基、チオエーテル基、アミノ基、シリル基等によって置換されたフラーレン誘導体を挙げることができる。 π electron acceptors include fullerenes other than C60 derivatives, octaazaporphyrin, π electron donor perfluoro products (perfluoropentacene, perfluorophthalocyanine, etc.), naphthalene tetracarboxylic anhydride, naphthalene tetracarboxylic diimide, perylene tetracarboxylic Polymers containing aromatic carboxylic acid anhydrides such as acid anhydrides and perylenetetracarboxylic acid diimides and imidized products thereof as skeletons, such as fullerene C70, fullerene C76, fullerene C78, fullerene C84, fullerene C240, fullerene C540, mixed Fullerenes, fullerene nanotubes, multi-walled nanotubes, single-walled nanotubes, nanohorns (conical), etc., and some of them are hydrogen atoms, halogen atoms, substituted or unsubstituted alkyl , An alkenyl group, an alkynyl group, an aryl group, a heteroaryl group, a cycloalkyl group, a silyl group, an ether group, a thioether group, an amino group, and a fullerene derivatives substituted by silyl group.
第3の成分としては、液晶性有機半導体が好ましい。 As the third component, a liquid crystalline organic semiconductor is preferable.
好ましい第3の成分はフタロシアニン又はその誘導体であり、液晶性フタロシアニン誘導体がより好ましい。 A preferred third component is phthalocyanine or a derivative thereof, and a liquid crystalline phthalocyanine derivative is more preferred.
好ましいフタロシアニン誘導体は、一般式(I)で表されるフタロシアニン誘導体である。 A preferred phthalocyanine derivative is a phthalocyanine derivative represented by the general formula (I).
(式中、Rは、互いに独立してC2〜C18の直鎖又は分岐を有するアルキル基、C2〜C18の直鎖又は分岐を有するアルケニル基、C2〜C18の直鎖又は分岐を有するアルキニル基、C2〜C18の直鎖又は分岐を有するアルコキシ基、C2〜C18の直鎖又は分岐を有するアルキルチオ基、である。) (In the formula, R is independently a C 2 -C 18 linear or branched alkyl group, a C 2 -C 18 linear or branched alkenyl group, a C 2 -C 18 linear or A branched alkynyl group, a C 2 to C 18 linear or branched alkoxy group, and a C 2 to C 18 linear or branched alkylthio group.)
C2〜C18のアルキルとしては、エチル、n-プロピル、イソプロピル、n-ブチル、イソブチル、sec-ブチル、tert-ブチル、n-ペンチル、n-ヘキシル、n-ヘプチル、オクチル、ノニル、デシル、ウンデシル、ドデシル、トリデシル、テトラデシル、ペンタデシル、ヘキサデシル、ヘプタデシル、オクタデシルなどの直鎖又は分岐を有するC2〜C18アルキル基、好ましくはC2〜C7アルキル基が挙げられ、好ましくはn-ペンチル、n-ヘキシルである。Rがn-ペンチルまたはn-ヘキシル、n-ヘプチルの場合には、一般式(I)の化合物は液晶性を示す。 C 2 -C 18 alkyl includes ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, tert-butyl, n-pentyl, n-hexyl, n-heptyl, octyl, nonyl, decyl, undecyl, dodecyl, tridecyl, tetradecyl, pentadecyl, hexadecyl, heptadecyl, straight-chain or C 2 -C 18 alkyl group having a branched such as octadecyl, preferably include C 2 -C 7 alkyl group, preferably n- pentyl, n-Hexyl. When R is n-pentyl, n-hexyl or n-heptyl, the compound of the general formula (I) exhibits liquid crystallinity.
C2〜C18のアルケニルとしては、ビニル、n-プロペニル、イソプロペニル、n-ブテニル、イソブテニル、sec-ブテニル、tert-ブテニル、n-ペンテニル、n-ヘキセニル、n-ヘプテニル、オクテニル、ノネニル、デセニル、ウンデセニル、ドデセニル、トリデセニル、テトラデセニル、ペンタデセニル、ヘキサデセニル、ヘプタデセニル、オクタデセニルなどの直鎖又は分岐を有するC2〜C18アルケニル基、好ましくはC2〜C7アルケニル基が挙げられる。 C 2 -C 18 alkenyl includes vinyl, n-propenyl, isopropenyl, n-butenyl, isobutenyl, sec-butenyl, tert-butenyl, n-pentenyl, n-hexenyl, n-heptenyl, octenyl, nonenyl, decenyl , undecenyl, dodecenyl, tridecenyl, tetradecenyl, pentadecenyl, hexadecenyl, heptadecenyl, straight-chain or C 2 -C 18 alkenyl group having a branched such as octadecenyl, and the like, preferably a C 2 -C 7 alkenyl group.
C2〜C18のアルキニルとしては、アセチニル、n-プロパルギル、n-ブチニル、sec-ブチニル、n-ペンチニル、n-ヘキシニル、n-ヘプチニル、オクチニル、ノニニル、デシニル、ウンデシニル、ドデシニル、トリデシニル、テトラデシニル、ペンタデシニル、ヘキサデシニル、ヘプタデシニル、オクタデシニルなどの直鎖又は分岐を有するC2〜C18アルキニル基、好ましくはC2〜C7アルキニル基が挙げられる。 The alkynyl of C 2 -C 18, Asechiniru, n- propargyl, n- butynyl, sec- butynyl, n- pentynyl, n- hexynyl, n- heptynyl, octynyl, nonynyl, decynyl, undecynyl, dodecynyl, tridecynyl, tetradecynyl, Examples thereof include linear or branched C 2 to C 18 alkynyl groups such as pentadecynyl, hexadecynyl, heptadecynyl and octadecynyl, preferably C 2 to C 7 alkynyl groups.
C2〜C18のアルコキシとしては、-O-(C2〜C18のアルキル)で表される基が挙げられ、好ましくはn-プロポキシ、イソプロポキシ、n-ブチルオキシ、イソブチルオキシ、sec-ブチルオキシ、tert-ブチルオキシ、n-ペンチルオキシ、n-ヘキシルオキシ、n-ヘプチルオキシ、オクチルオキシ、ノニルオキシ、デシルオキシ、ウンデシルオキシ、ドデシルオキシ、トリデシルオキシ、テトラデシルオキシ、ペンタデシルオキシ、ヘキサデシルオキシ、ヘプタデシルオキシ、オクタデシルオキシなどの直鎖又は分岐を有するC2〜C18アルコキシ基、好ましくはC2〜C7アルコキシ基が挙げられ、好ましくはn-ペンチルオキシ、n-ヘキシルオキシである。 Examples of C 2 -C 18 alkoxy include a group represented by —O— (C 2 -C 18 alkyl), preferably n-propoxy, isopropoxy, n-butyloxy, isobutyloxy, sec-butyloxy. Tert-butyloxy, n-pentyloxy, n-hexyloxy, n-heptyloxy, octyloxy, nonyloxy, decyloxy, undecyloxy, dodecyloxy, tridecyloxy, tetradecyloxy, pentadecyloxy, hexadecyloxy, A linear or branched C 2 -C 18 alkoxy group such as heptadecyloxy, octadecyloxy, etc., preferably a C 2 -C 7 alkoxy group is exemplified, and n-pentyloxy and n-hexyloxy are preferred.
C2〜C18のアルキルチオとしては、-S-(C2〜C18のアルキル)で表される基が挙げられ、好ましくはエチルチオ、n-プロピルチオ、イソプロピルチオ、n-ブチルチオ、イソブチルチオ、sec-ブチルチオ、tert-ブチルチオ、n-ペンチルチオ、n-ヘキシルチオ、n-ヘプチルチオ、オクチルチオ、ノニルチオ、デシルチオ、ウンデシルチオ、ドデシルチオ、トリデシルチオ、テトラデシルチオ、ペンタデシルチオ、ヘキサデシルチオ、ヘプタデシルチオ、オクタデシルチオなどの直鎖又は分岐を有するC2〜C18アルキルチオ基、好ましくはC2〜C7アルキルチオ基が挙げられ、好ましくはn-ペンチルチオ、n-ヘキシルチオである。 The alkylthio of the C 2 -C 18, -S- groups represented by include (C 2 -C 18 alkyl), preferably ethylthio, n- propylthio, isopropylthio, n- butylthio, isobutylthio, sec -Butylthio, tert-butylthio, n-pentylthio, n-hexylthio, n-heptylthio, octylthio, nonylthio, decylthio, undecylthio, dodecylthio, tridecylthio, tetradecylthio, pentadecylthio, hexadecylthio, heptadecylthio, octadecylthio, etc. A branched C 2 to C 18 alkylthio group, preferably a C 2 to C 7 alkylthio group, may be mentioned, and n-pentylthio and n-hexylthio are preferable.
一般式(I)において、8つのR基は全て同一でもよく、1つの化合物の中に2種以上の置換基が存在してもよい(例えば4つがヘキシル基であり、4つがペンチル基である化合物)。 In the general formula (I), all eight R groups may be the same, or two or more substituents may be present in one compound (for example, four are hexyl groups and four are pentyl groups). Compound).
好ましいフタロシアニン誘導体は、フタロシアニン環の1,4,8,11,15,18,22,25位にアルキル基を持つ化合物である。 Preferred phthalocyanine derivatives are compounds having an alkyl group at the 1,4,8,11,15,18,22,25 position of the phthalocyanine ring.
一般式(I)の化合物は、公知の化合物であり、公知の方法により合成でき、例えば以下のスキーム1に従い合成することができる。
The compound of general formula (I) is a well-known compound, can be synthesize | combined by a well-known method, for example, can be synthesize | combined according to the following
(Rは前記に定義されるとおりである) (R is as defined above)
上記ジシアノ化合物において2つのR基が異なるか(例えばペンチル基とヘキシル基)、或いは、Rが異なる2種以上のジシアノ化合物を原料として用いれば、一般式(I)においてRが2種以上である化合物を得ることができる。 In the above dicyano compound, if two R groups are different (for example, pentyl group and hexyl group), or if two or more kinds of dicyano compounds having different R are used as raw materials, R in the general formula (I) is two or more kinds. A compound can be obtained.
一般式(I)中、Rの炭素数が4〜5の化合物は結晶相を6以上の化合物は中間相を有する。このうち、中間相の発現及びその温度領域を広げるという観点から8個のRは異なる2種以上の直鎖或は分岐鎖の炭化水素基からなるのが好ましい。ここで、中間相とは、結晶相と非晶相の中間に位置する一定の分子配向秩序をもった相状態の総称であり、ネマチック液晶相、スメクチック液晶相、柔粘性結晶、ディスコティックカラムナー液晶相、コレステリック液晶相、光学的等方性液晶(キュービック相)相等の分子凝集状態を指す。かかる中間相形成性化合物は、その自発的配向性により得られる膜の大面積均一性とキャリヤ移動に好都合な分子配向様式という2つの長所をあわせ持つことから、デバイス作製上有利である。 In the general formula (I), a compound having 4 to 5 carbon atoms in R has a crystalline phase, and a compound having 6 or more has an intermediate phase. Of these, from the viewpoint of developing the intermediate phase and expanding its temperature range, the eight Rs are preferably composed of two or more different linear or branched hydrocarbon groups. Here, the intermediate phase is a general term for a phase state having a certain molecular orientation order located between the crystalline phase and the amorphous phase, and includes a nematic liquid crystal phase, a smectic liquid crystal phase, a plastic crystal, and a discotic columnar liquid crystal. This refers to a molecular aggregation state such as a phase, a cholesteric liquid crystal phase, or an optically isotropic liquid crystal (cubic phase) phase. Such a mesophase-forming compound is advantageous in terms of device fabrication because it has two advantages of a large area uniformity of the film obtained by its spontaneous orientation and a molecular orientation mode convenient for carrier movement.
一般式(I)で表されるフタロシアニン誘導体は、光電変換素子のπ電子ドナーとしてホール及び電子ともに高いキャリア移動度を有する。 The phthalocyanine derivative represented by the general formula (I) has high carrier mobility for both holes and electrons as a π-electron donor of the photoelectric conversion element.
一般式(I)で表されるフタロシアニン誘導体の一部は、高いキャリア移動度に加えて中間相を発現するが、このような化合物は、有機溶媒に可溶、かつ適切な配向処理を施すことによって自己組織化を促すことが可能となり光電変換素子に好ましく用いることができる。 Some of the phthalocyanine derivatives represented by the general formula (I) express an intermediate phase in addition to high carrier mobility. Such a compound is soluble in an organic solvent and should be subjected to appropriate alignment treatment. Thus, self-organization can be promoted and it can be preferably used for a photoelectric conversion element.
本発明の光電変換素子ないし薄膜太陽電池には、性能を低下させない範囲で、上記のフタロシアニン誘導体以外のπ電子ドナーを任意の配合で含んでいても良い。 The photoelectric conversion element or the thin film solar cell of the present invention may contain π electron donors other than the above phthalocyanine derivatives in any combination as long as the performance is not deteriorated.
図1は、薄膜太陽電池のための光電変換素子の一例を示す断面図である。 FIG. 1 is a cross-sectional view showing an example of a photoelectric conversion element for a thin film solar cell.
光電変換素子は、基板(図1では石英基板)の一方面上に、透明電極(図1ではITO透明電極)、正孔輸送層(図1ではPEDOT:PSS)、光電変換部(図1ではP3HT:C6PcH2:PCBM)、電子輸送層(図1ではLiF)及び負極(図1ではAl電極)が順次積層されている。 The photoelectric conversion element has a transparent electrode (ITO transparent electrode in FIG. 1), a hole transport layer (PEDOT: PSS in FIG. 1), a photoelectric conversion unit (in FIG. 1) on one side of a substrate (quartz substrate in FIG. 1). P3HT: C6PcH2: PCBM), an electron transport layer (LiF in FIG. 1), and a negative electrode (Al electrode in FIG. 1) are sequentially laminated.
基板は、順次積層された透明電極、光電変換部及び対極(負極)を保持する部材である。図1の本実施形態では、基板側から光電変換される光が入射するので、基板は、この光電変換される光を透過させることが可能な、すなわち、この光電変換すべき光の波長に対して透明な部材である。基板は、例えば、ガラス基板や樹脂基板等が用いられる。この基板は、必須ではなく、例えば、光電変換部の両面に透明電極及び対極を形成することでの有機光電変換素子が構成されてもよい。 A board | substrate is a member holding the transparent electrode, photoelectric conversion part, and counter electrode (negative electrode) which were laminated | stacked one by one. In this embodiment of FIG. 1, since the photoelectrically converted light is incident from the substrate side, the substrate can transmit the photoelectrically converted light, that is, with respect to the wavelength of the light to be photoelectrically converted. Transparent member. For example, a glass substrate or a resin substrate is used as the substrate. This substrate is not essential. For example, an organic photoelectric conversion element may be configured by forming a transparent electrode and a counter electrode on both surfaces of the photoelectric conversion unit.
光電変換部は、光エネルギーを電気エネルギーに変換する層であって、π電子ドナーとπ電子アクセプターとをゲルないし高分子中に一様に混合した組成物により好ましく構成される。この高分子ないしゲルは、重合性官能基を有しているのがよく、この重合性官能基を化合物(I)の液晶相において重合することで、光電変換部を構成してもよい。 The photoelectric conversion part is a layer that converts light energy into electric energy, and is preferably composed of a composition in which a π electron donor and a π electron acceptor are uniformly mixed in a gel or a polymer. The polymer or gel preferably has a polymerizable functional group, and the photoelectric conversion part may be constituted by polymerizing the polymerizable functional group in the liquid crystal phase of the compound (I).
π電子ドナーは、電子供与体(ドナー)として機能し、π電子アクセプターは、電子受容体として機能する。ここで、π電子ドナー及びπ電子アクセプターは、“光を吸収した際に、電子供与体から電子受容体に電子が移動し、正孔と電子のペア(電荷分離状態)を形成する電子供与体及び電子受容体”であり、電極のように単に電子を供与あるいは受容するものではなく、光反応によって、電子を供与あるいは受容するものである。 The π electron donor functions as an electron donor (donor), and the π electron acceptor functions as an electron acceptor. Here, the π-electron donor and the π-electron acceptor are “an electron donor that forms a hole-electron pair (charge-separated state) when electrons are transferred from the electron donor to the electron acceptor when light is absorbed. And an electron acceptor ”, which does not simply donate or accept electrons like an electrode, but donates or accepts electrons by a photoreaction.
図1において、基板を介して透明電極から入射された光は、光電変換部のπ電子アクセプターあるいはπ電子ドナーで吸収され、π電子ドナーからπ電子アクセプターに電子が移動し、正孔と電子のペア(電荷分離状態)が形成される。発生した電荷は、内部電界、例えば、透明電極と対極の仕事関数が異なる場合では透明電極と対極との電位差によって、電子は、π電子アクセプター間を通り、また正孔は、π電子ドナー間を通り、それぞれ異なる電極へ運ばれ、光電流が検出される。例えば、透明電極の仕事関数が対極の仕事関数よりも大きい場合では、電子は、透明電極へ、正孔は、対極へ輸送される。なお、仕事関数の大小が逆転すれば電子と正孔は、これとは逆方向に輸送される。また、透明電極と対極との間に電位をかけることにより、電子と正孔の輸送方向を制御することもできる。 In FIG. 1, light incident from the transparent electrode through the substrate is absorbed by the π electron acceptor or π electron donor of the photoelectric conversion unit, electrons move from the π electron donor to the π electron acceptor, and holes and electrons are A pair (charge separation state) is formed. Due to the internal electric field, for example, when the work function of the transparent electrode and the counter electrode is different, due to the potential difference between the transparent electrode and the counter electrode, electrons pass between the π electron acceptors, and holes pass between the π electron donors. Each is carried to a different electrode and the photocurrent is detected. For example, when the work function of the transparent electrode is larger than the work function of the counter electrode, electrons are transported to the transparent electrode and holes are transported to the counter electrode. If the magnitude of the work function is reversed, electrons and holes are transported in the opposite direction. Moreover, the transport direction of electrons and holes can be controlled by applying a potential between the transparent electrode and the counter electrode.
図1には記載していないが、正孔ブロック層、電子ブロック層、電子注入層、正孔注入層、あるいは平滑化層等の他の層を有していてもよい。 Although not shown in FIG. 1, other layers such as a hole blocking layer, an electron blocking layer, an electron injection layer, a hole injection layer, or a smoothing layer may be included.
さらに好ましい構成としては、前記光電変換部が、π電子ドナー単体からなる層、およびπ電子アクセプター単体からなる層で、π電子ドナーとπ電子アクセプターを含む組成物層を挟む三層構成としてもよい。このような三層構成とすることにより、正孔及び電子の整流性がより高くなり、電荷分離した正孔・電子の再結合等によるロスが低減され、一層高い光電変換効率を得ることができる。 As a more preferable configuration, the photoelectric conversion portion may be a three-layer configuration in which a composition layer including a π electron donor and a π electron acceptor is sandwiched between a layer composed of a π electron donor alone and a layer composed of a π electron acceptor alone. . By adopting such a three-layer structure, the rectifying property of holes and electrons is further increased, loss due to recombination of charge-separated holes and electrons is reduced, and higher photoelectric conversion efficiency can be obtained. .
さらに、太陽光利用率(光電変換効率)の向上を目的として、このような光電変換素子を積層した、タンデム型の構成としてもよい。タンデム型構成の場合、基板上に、順次透明電極、第1の光電変換部′を積層した後、電荷再結合層を積層した後、第2の光電変換部、次いで対極を積層することで、タンデム型の構成とすることができる。第2の光電変換部は、第1の光電変換部の吸収スペクトルと同じスペクトルを吸収する層でもよいし、異なるスペクトルを吸収する層でもよいが、好ましくは異なるスペクトルを吸収する層である。 Furthermore, it is good also as a tandem-type structure which laminated | stacked such a photoelectric conversion element for the purpose of the improvement of sunlight utilization factor (photoelectric conversion efficiency). In the case of the tandem type configuration, after laminating the transparent electrode and the first photoelectric conversion unit ′ sequentially on the substrate, laminating the charge recombination layer, laminating the second photoelectric conversion unit and then the counter electrode, A tandem configuration can be adopted. The second photoelectric conversion unit may be a layer that absorbs the same spectrum as the absorption spectrum of the first photoelectric conversion unit or may be a layer that absorbs a different spectrum, but is preferably a layer that absorbs a different spectrum.
一般式(1)において、Rは、炭素数2〜7,好ましくは4〜6の直鎖又は分岐を有するアルキル基である。 In the general formula (1), R is a linear or branched alkyl group having 2 to 7 carbon atoms, preferably 4 to 6 carbon atoms.
本発明の光電変換部と透明電極(陽極)との中間には正孔輸送層を配置することが、光電変換部で発生した電荷をより効率的に取り出すことが可能となるため好ましい。正孔輸送層を構成する材料としては、例えば、低分子化合物であればNTCDAに代表される芳香族環状酸無水物等が挙げられ、高分子化合物であればポリ(3,4−エチレンジオキシ)チオフェン;下記のポリスチレンスルホネート(PEDOT:PSS)、ポリアニリン;カンファースルホン酸(PANI:CSA)等に代表される公知の導電性高分子等が挙げられる。 It is preferable to dispose a hole transport layer between the photoelectric conversion part of the present invention and the transparent electrode (anode) because it is possible to more efficiently take out the charges generated in the photoelectric conversion part. Examples of the material constituting the hole transport layer include aromatic cyclic acid anhydrides represented by NTCDA for low molecular compounds, and poly (3,4-ethylenedioxy) for high molecular compounds. ) Thiophene; known conductive polymers represented by the following polystyrene sulfonate (PEDOT: PSS), polyaniline; camphorsulfonic acid (PANI: CSA), and the like.
また、励起子が電極まで拡散して失活してしまうのを防止する役割を持たせるために光電変換部の片側或いは両側にバッファー層を挿入してもよい。このように励起子阻止層として機能させることは、高効率化のために有効である。バッファー層に励起子阻止層としての役割を持たせる場合の好ましい材料としては、例えば有機エレクトロルミネッセンス(有機EL)用途で公知な正孔障壁層用材料又は電子障壁層用材料等が挙げられる。正孔障壁層として好ましく利用されている材料は、イオン化ポテンシャルが充分に大きい化合物であり、電子障壁層として好ましく利用されている材料は、電子親和力が充分に小さい化合物である。陰極側の正孔障壁層材料としては、具体的には、バソクプロイン(BCP)、バソフェナントロリン(BPhen)等が挙げられる。 Further, a buffer layer may be inserted on one side or both sides of the photoelectric conversion unit in order to prevent the excitons from diffusing to the electrode and deactivating. The functioning as the exciton blocking layer in this way is effective for increasing the efficiency. As a preferable material in the case where the buffer layer has a role as an exciton blocking layer, for example, a well-known material for a hole barrier layer or a material for an electron barrier layer for organic electroluminescence (organic EL) applications may be used. A material preferably used as the hole blocking layer is a compound having a sufficiently high ionization potential, and a material preferably used as the electron blocking layer is a compound having a sufficiently low electron affinity. Specific examples of the hole blocking layer material on the cathode side include bathocuproin (BCP) and bathophenanthroline (BPhen).
本発明の光電変換素子は、光電変換部と対極(陰極)との中間に電子輸送層を形成することで、光電変換部で発生した電荷をより効率的に取り出すことが可能となるため、好ましい。これらの層を形成する手段としては、真空蒸着法、溶液塗布法のいずれであってもよいが、好ましくは溶液塗布法である。 The photoelectric conversion element of the present invention is preferable because the charge generated in the photoelectric conversion unit can be taken out more efficiently by forming an electron transport layer between the photoelectric conversion unit and the counter electrode (cathode). . The means for forming these layers may be either a vacuum deposition method or a solution coating method, but is preferably a solution coating method.
エネルギー変換効率の向上や、素子寿命の向上を目的に、各種中間層を素子内に有する構成としてもよい。中間層の例としては、正孔ブロック層、電子ブロック層、正孔注入層、電子注入層、励起子ブロック層、UV吸収層、光反射層、波長変換層などを挙げることができる。 For the purpose of improving energy conversion efficiency and improving the lifetime of the element, a structure having various intermediate layers in the element may be employed. Examples of the intermediate layer include a hole block layer, an electron block layer, a hole injection layer, an electron injection layer, an exciton block layer, a UV absorption layer, a light reflection layer, and a wavelength conversion layer.
本発明の透明電極は、陰極、陽極は特に限定せず、素子構成により選択することができるが、通常陽極として用いることが一般的である。なお本発明において陽極とは、正孔を取り出す電極のことを意味する。例えば、陽極として用いる場合、好ましくは380〜800nmの光を透過する電極である。材料としては、例えば、インジウムチンオキシド(ITO)、SnO2、ZnO等の透明導電性金属酸化物、金、銀、白金等の金属薄膜、金属ナノワイヤー、カーボンナノチューブ用いることができる。またポリピロール、ポリアニリン、ポリチオフェン、ポリチエニレンビニレン、ポリアズレン、ポリイソチアナフテン、ポリカルバゾール、ポリアセチレン、ポリフェニレン、ポリフェニレンビニレン、ポリアセン、ポリフェニルアセチレン、ポリジアセチレン及びポリナフタレンの各誘導体からなる群より選ばれる導電性高分子等も用いることができる。また、これらの導電性化合物を複数組み合わせて透明電極とすることもできる。 In the transparent electrode of the present invention, the cathode and the anode are not particularly limited and can be selected depending on the element structure, but it is generally used as an anode. In the present invention, the anode means an electrode for extracting holes. For example, when used as an anode, it is preferably an electrode that transmits light of 380 to 800 nm. As the material, for example, transparent conductive metal oxides such as indium tin oxide (ITO), SnO 2 and ZnO, metal thin films such as gold, silver and platinum, metal nanowires and carbon nanotubes can be used. Also, a conductive material selected from the group consisting of polypyrrole, polyaniline, polythiophene, polythienylene vinylene, polyazulene, polyisothianaphthene, polycarbazole, polyacetylene, polyphenylene, polyphenylene vinylene, polyacene, polyphenylacetylene, polydiacetylene and polynaphthalene. A functional polymer can also be used. A plurality of these conductive compounds can be combined to form a transparent electrode.
本発明の対電極は、陰極、陽極は特に限定せず、素子構成により選択することができるが、通常陰極として用いることが一般的である。なお本発明において陰極とは、電子を取り出す電極のことを意味する。例えば、陰極として用いる場合、対電極は導電材単独層であっても良いが、導電性を有する材料に加えて、これらを保持する樹脂を併用しても良い。対電極は導電材単独層であっても良いが、導電性を有する材料に加えて、これらを保持する樹脂を併用しても良い。対電極の導電材としては、仕事関数の小さい(4eV以下)金属、合金、電気伝導性化合物及びこれらの混合物を電極物質とするものが用いられる。このような電極物質の具体例としては、ナトリウム、ナトリウム−カリウム合金、マグネシウム、リチウム、マグネシウム/銅混合物、マグネシウム/銀混合物、マグネシウム/アルミニウム混合物、マグネシウム/インジウム混合物、アルミニウム/酸化アルミニウム(Al2O3)混合物、インジウム、リチウム/アルミニウム混合物、希土類金属等が挙げられる。これらの中で、電子の取り出し性能及び酸化等に対する耐久性の点から、これら金属とこれより仕事関数の値が大きく安定な金属である第二金属との混合物、例えば、マグネシウム/銀混合物、マグネシウム/アルミニウム混合物、マグネシウム/インジウム混合物、アルミニウム/酸化アルミニウム(Al2O3)混合物、リチウム/アルミニウム混合物、アルミニウム等が好適である。対電極はこれらの電極物質を蒸着やスパッタリング等の方法により薄膜を形成させることにより、作製することができる。また、膜厚は通常10nm〜5μm、好ましくは50〜200nmの範囲で選ばれる。 The counter electrode of the present invention is not particularly limited to a cathode and an anode, and can be selected depending on the element structure, but is usually used as a cathode. In the present invention, the cathode means an electrode for taking out electrons. For example, when used as a cathode, the counter electrode may be a single layer of a conductive material, but in addition to a conductive material, a resin that holds these may be used in combination. The counter electrode may be a single layer of a conductive material, but in addition to a conductive material, a resin that holds these may be used in combination. As the conductive material of the counter electrode, a material having a small work function (4 eV or less) metal, alloy, electrically conductive compound and a mixture thereof is used. Specific examples of such electrode materials include sodium, sodium-potassium alloy, magnesium, lithium, magnesium / copper mixture, magnesium / silver mixture, magnesium / aluminum mixture, magnesium / indium mixture, aluminum / aluminum oxide (Al 2 O 3 ) Mixtures, indium, lithium / aluminum mixtures, rare earth metals and the like. Among these, from the viewpoint of electron extraction performance and durability against oxidation, etc., a mixture of these metals and a second metal which is a stable metal having a larger work function value than this, for example, a magnesium / silver mixture, magnesium / Aluminum mixtures, magnesium / indium mixtures, aluminum / aluminum oxide (Al 2 O 3 ) mixtures, lithium / aluminum mixtures, aluminum and the like are preferred. The counter electrode can be produced by forming a thin film of these electrode materials by a method such as vapor deposition or sputtering. The film thickness is usually selected in the range of 10 nm to 5 μm, preferably 50 to 200 nm.
対電極の導電材として金属材料を用いれば対電極側に来た光は反射されて第1電極側に反射され、この光が再利用可能となり、光電変換層で再度吸収され、より光電変換効率が向上し好ましい。また、対電極は、金属(例えば金、銀、銅、白金、ロジウム、ルテニウム、アルミニウム、マグネシウム、インジウム等)、炭素からなるナノ粒子、ナノワイヤー、ナノ構造体であってもよく、ナノワイヤーの分散物であれば、透明で導電性の高い対電極を塗布法により形成でき好ましい。 If a metal material is used as the conductive material of the counter electrode, the light coming to the counter electrode side is reflected and reflected to the first electrode side, and this light can be reused and is absorbed again by the photoelectric conversion layer, and more photoelectric conversion efficiency Is preferable. The counter electrode may be a metal (eg, gold, silver, copper, platinum, rhodium, ruthenium, aluminum, magnesium, indium, etc.), carbon nanoparticle, nanowire, or nanostructure. A dispersion is preferable because a transparent and highly conductive counter electrode can be formed by a coating method.
また、対電極側を光透過性とする場合は、例えば、アルミニウム及びアルミニウム合金、銀及び銀化合物等の対電極に適した導電性材料を薄く1〜20nm程度の膜厚で作製した後、上記透明電極の説明で挙げた導電性光透過性材料の膜を設けることで、光透過性対電極とすることができる。 Moreover, when making the counter electrode side light-transmitting, for example, after forming a conductive material suitable for the counter electrode such as aluminum and aluminum alloy, silver and silver compound in a thin film thickness of about 1 to 20 nm, By providing a film of the conductive light transmissive material mentioned in the description of the transparent electrode, a light transmissive counter electrode can be obtained.
また、光電変換素子をタンデム構成とする場合に必要となる中間電極の材料としては、透明性と導電性を併せ持つ化合物を用いた層であることが好ましく、前記透明電極で用いたような材料(ITO、AZO、FTO、酸化チタン等の透明金属酸化物、Ag、Al、Au等の非常に薄い金属層またはナノ粒子・ナノワイヤーを含有する層、PEDOT:PSS、ポリアニリン等の導電性高分子材料等)を用いることができる。 In addition, the intermediate electrode material required when the photoelectric conversion element has a tandem configuration is preferably a layer using a compound having both transparency and conductivity. Transparent metal oxides such as ITO, AZO, FTO and titanium oxide, very thin metal layers such as Ag, Al and Au, or layers containing nanoparticles / nanowires, conductive polymer materials such as PEDOT: PSS and polyaniline Etc.) can be used.
基板側から光電変換される光が入射する場合、基板はこの光電変換される光を透過させることが可能な、即ちこの光電変換すべき光の波長に対して透明な部材であることが好ましい。基板は、例えば、ガラス基板や樹脂基板等が好適に挙げられるが、軽量性と柔軟性の観点から透明樹脂フィルムを用いることが望ましい。本発明で透明基板として好ましく用いることができる透明樹脂フィルムには特に制限がなく、その材料、形状、構造、厚み等については公知のものの中から適宜選択することができる。例えば、ポリエチレンテレフタレート(PET)、ポリエチレンナフタレート(PEN)変性ポリエステル等のポリエステル系樹脂フィルム、ポリエチレン(PE)樹脂フィルム、ポリプロピレン(PP)樹脂フィルム、ポリスチレン樹脂フィルム、環状オレフィン系樹脂等のポリオレフィン類樹脂フィルム、ポリ塩化ビニル、ポリ塩化ビニリデン等のビニル系樹脂フィルム、ポリエーテルエーテルケトン(PEEK)樹脂フィルム、ポリサルホン(PSF)樹脂フィルム、ポリエーテルサルホン(PES)樹脂フィルム、ポリカーボネート(PC)樹脂フィルム、ポリアミド樹脂フィルム、ポリイミド樹脂フィルム、アクリル樹脂フィルム、トリアセチルセルロース(TAC)樹脂フィルム等を挙げることができるが、可視域の波長(380〜800nm)における透過率が80%以上である樹脂フィルムであれば、本発明に係る透明樹脂フィルムに好ましく適用することができる。中でも透明性、耐熱性、取り扱いやすさ、強度及びコストの点から、二軸延伸ポリエチレンテレフタレートフィルム、二軸延伸ポリエチレンナフタレートフィルム、ポリエーテルサルホンフィルム、ポリカーボネートフィルムであることが好ましく、二軸延伸ポリエチレンテレフタレートフィルム、二軸延伸ポリエチレンナフタレートフィルムであることがより好ましい。 When light that is photoelectrically converted enters from the substrate side, the substrate is preferably a member that can transmit the light that is photoelectrically converted, that is, a member that is transparent to the wavelength of the light to be photoelectrically converted. As the substrate, for example, a glass substrate, a resin substrate and the like are preferably mentioned, but it is desirable to use a transparent resin film from the viewpoint of light weight and flexibility. There is no restriction | limiting in particular in the transparent resin film which can be preferably used as a transparent substrate by this invention, The material, a shape, a structure, thickness, etc. can be suitably selected from well-known things. For example, polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN) modified polyester, polyethylene (PE) resin film, polypropylene (PP) resin film, polystyrene resin film, polyolefin resins such as cyclic olefin resin Film, vinyl resin film such as polyvinyl chloride, polyvinylidene chloride, polyether ether ketone (PEEK) resin film, polysulfone (PSF) resin film, polyether sulfone (PES) resin film, polycarbonate (PC) resin film, A polyamide resin film, a polyimide resin film, an acrylic resin film, a triacetyl cellulose (TAC) resin film, and the like can be given. If the resin film transmittance of 80% or more at ~800nm), can be preferably applied to a transparent resin film according to the present invention. Among these, from the viewpoint of transparency, heat resistance, ease of handling, strength and cost, it is preferably a biaxially stretched polyethylene terephthalate film, a biaxially stretched polyethylene naphthalate film, a polyethersulfone film, or a polycarbonate film, and biaxially stretched. More preferred are polyethylene terephthalate films and biaxially stretched polyethylene naphthalate films.
本発明に用いられる透明基板には、塗布液の濡れ性や接着性を確保するために、表面処理を施すことや易接着層を設けることができる。表面処理や易接着層については従来公知の技術を使用できる。例えば、表面処理としては、コロナ放電処理、火炎処理、紫外線処理、高周波処理、グロー放電処理、活性プラズマ処理、レーザー処理等の表面活性化処理を挙げることができる。また、易接着層としては、ポリエステル、ポリアミド、ポリウレタン、ビニル系共重合体、ブタジエン系共重合体、アクリル系共重合体、ビニリデン系共重合体、エポキシ系共重合体等を挙げることができる。 The transparent substrate used in the present invention can be subjected to a surface treatment or an easy adhesion layer in order to ensure the wettability and adhesiveness of the coating solution. A conventionally well-known technique can be used about a surface treatment or an easily bonding layer. For example, the surface treatment includes surface activation treatment such as corona discharge treatment, flame treatment, ultraviolet treatment, high frequency treatment, glow discharge treatment, active plasma treatment, and laser treatment. Examples of the easy adhesion layer include polyester, polyamide, polyurethane, vinyl copolymer, butadiene copolymer, acrylic copolymer, vinylidene copolymer, and epoxy copolymer.
また、酸素及び水蒸気の透過を抑制する目的で、透明基板にはバリアコート層が予め形成されていてもよい。 In order to suppress permeation of oxygen and water vapor, a barrier coat layer may be formed in advance on the transparent substrate.
本発明の光電変換素子は、太陽光のより効率的な受光を目的として、各種の光学機能層を有していて良い。光学機能層としては、たとえば、反射防止膜、マイクロレンズアレイ等の集光層、対極で反射した光を散乱させて再度発電層に入射させることができるような光拡散層などを設けても良い。 The photoelectric conversion element of the present invention may have various optical functional layers for the purpose of more efficient reception of sunlight. As the optical functional layer, for example, a light condensing layer such as an antireflection film or a microlens array, a light diffusion layer that can scatter the light reflected by the counter electrode, and enter the power generation layer again may be provided. .
反射防止層としては、各種公知の反射防止層を設けることができるが、例えば、透明樹脂フィルムが二軸延伸ポリエチレンテレフタレートフィルムである場合は、フィルムに隣接する易接着層の屈折率を1.57〜1.63とすることで、フィルム基板と易接着層との界面反射を低減して透過率を向上させることができるのでより好ましい。屈折率を調整する方法としては、酸化スズゾルや酸化セリウムゾル等の比較的屈折率の高い酸化物ゾルとバインダー樹脂との比率を適宜調整して塗設することで実施できる。易接着層は単層でもよいが、接着性を向上させるためには2層以上の構成にしてもよい。 Various known antireflection layers can be provided as the antireflection layer. For example, when the transparent resin film is a biaxially stretched polyethylene terephthalate film, the refractive index of the easy adhesion layer adjacent to the film is 1.57. It is more preferable to set it to ˜1.63 because the interface reflection between the film substrate and the easy adhesion layer can be reduced and the transmittance can be improved. The method for adjusting the refractive index can be carried out by appropriately adjusting the ratio of the oxide sol having a relatively high refractive index such as tin oxide sol or cerium oxide sol and the binder resin. The easy adhesion layer may be a single layer, but may be composed of two or more layers in order to improve adhesion.
集光層としては、例えば、支持基板の太陽光受光側にマイクロレンズアレイ上の構造を設けるように加工したり、あるいは所謂集光シートと組み合わせたりすることにより特定方向からの受光量を高めたり、逆に太陽光の入射角度依存性を低減することができる。 As the condensing layer, for example, it is processed to provide a structure on the microlens array on the sunlight receiving side of the support substrate, or the amount of light received from a specific direction is increased by combining with a so-called condensing sheet. Conversely, the incident angle dependency of sunlight can be reduced.
マイクロレンズアレイの例としては、基板の光取り出し側に一辺が30μmでその頂角が90度となるような四角錐を2次元に配列する。一辺は10〜100μmが好ましい。これより小さくなると回折の効果が発生して色付き、大きすぎると厚みが厚くなり好ましくない。 As an example of the microlens array, quadrangular pyramids having a side of 30 μm and an apex angle of 90 degrees are two-dimensionally arranged on the light extraction side of the substrate. One side is preferably 10 to 100 μm. If it is smaller than this, the effect of diffraction is generated and colored.
また光散乱層としては、各種のアンチグレア層、金属または各種無機酸化物などのナノ粒子・ナノワイヤー等を無色透明なポリマーに分散した層などを挙げることができる。 Examples of the light scattering layer include various antiglare layers, layers in which nanoparticles or nanowires such as metals or various inorganic oxides are dispersed in a colorless and transparent polymer, and the like.
π電子アクセプター(C60誘導体、第3の成分)とπ電子ドナー(ポリチオフェン誘導体、第3の成分)とが混合された光電変換部、および輸送層・電極の形成方法としては、蒸着法、塗布法(キャスト法、スピンコート法を含む)、印刷法等を例示することができる。この際に使用する塗布方法に制限は無いが、例えば、スピンコート法、溶液からのキャスト法、ディップコート法、ブレードコート法、ワイヤバーコート法、グラビアコート法、スプレーコート法等が挙げられる。インクジェット法、スクリーン印刷法、凸版印刷法、凹版印刷法、オフセット印刷法、フレキソ印刷法等の印刷法でパターニングすることもできる。π電子アクセプター(C60誘導体、第3の成分)とπ電子ドナー(ポリチオフェン誘導体、第3の成分)を溶解する溶媒としては、クロロホルム、塩化メチレン、四塩化炭素、1,2-ジクロロエタン等のハロゲン系溶媒、ベンゼン、トルエン、キシレンなどの芳香族炭化水素、ピリジン等のヘテロ芳香族化合物、メタノール、エタノール、プロパノール、ブタノールなどのアルコール、酢酸エチルなどのエステル、THF,ジエチルエーテル、ジイソプロピルエーテルなどのエーテル、アセトン、メチルエチルケトンなどのケトン、ジオキサン、DMF、DMSOなどが挙げられ、これらの溶媒を1種又は2種以上を組み合わせて使用することができる。 As a method for forming a photoelectric conversion part in which a π electron acceptor (C60 derivative, third component) and a π electron donor (polythiophene derivative, third component) are mixed, and a transport layer / electrode, a vapor deposition method or a coating method is used. Examples include a printing method (including a casting method and a spin coating method). Although there is no restriction | limiting in the coating method used in this case, For example, a spin coat method, the casting method from a solution, a dip coat method, a blade coat method, a wire bar coat method, a gravure coat method, a spray coat method etc. are mentioned. Patterning can also be performed by a printing method such as an inkjet method, a screen printing method, a relief printing method, an intaglio printing method, an offset printing method, or a flexographic printing method. Solvents that dissolve the π electron acceptor (C60 derivative, third component) and π electron donor (polythiophene derivative, third component) include halogens such as chloroform, methylene chloride, carbon tetrachloride, and 1,2-dichloroethane. Solvents, aromatic hydrocarbons such as benzene, toluene and xylene, heteroaromatic compounds such as pyridine, alcohols such as methanol, ethanol, propanol and butanol, esters such as ethyl acetate, ethers such as THF, diethyl ether and diisopropyl ether, Examples include acetone, ketones such as methyl ethyl ketone, dioxane, DMF, DMSO, and the like. These solvents can be used alone or in combination of two or more.
本発明の光電変換素子は、ポリチオフェン誘導体と第3成分が微細な結晶構造を有することが好ましい。印刷法、塗布法により活性層を形成する場合、溶媒への溶解度、溶媒の蒸発速度、配合する成分の相溶性などを調整することで、高い光電変換効率を有する光電変換素子を得ることができる。 In the photoelectric conversion element of the present invention, the polythiophene derivative and the third component preferably have a fine crystal structure. When an active layer is formed by a printing method or a coating method, a photoelectric conversion element having high photoelectric conversion efficiency can be obtained by adjusting the solubility in a solvent, the evaporation rate of the solvent, the compatibility of the components to be blended, and the like. .
蒸着、塗布ないし印刷後は残留溶媒及び水分、ガスの除去、及び半導体材料の結晶化による移動度向上・吸収長波化を引き起こすために加熱を行うことが好ましい。製造工程中において所定の温度でアニール処理されると、微視的に一部が凝集または結晶化が促進され、適切な相分離構造とすることができる。その結果、キャリア移動度が向上し、高い効率を得ることができるようになる。 After vapor deposition, coating or printing, it is preferable to perform heating in order to cause removal of residual solvent, moisture and gas, and improvement of mobility and absorption of long wave by crystallization of the semiconductor material. When annealing is performed at a predetermined temperature during the manufacturing process, a part of the material is microscopically promoted to agglomerate or crystallize, and an appropriate phase separation structure can be obtained. As a result, carrier mobility is improved and high efficiency can be obtained.
光電変換部は、π電子アクセプターとπ電子ドナーとが均一に混在された単一層で構成してもよいが、π電子アクセプターとπ電子ドナーとの混合比を変えた複数層で構成してもよい。この場合、前述したような塗布後に不溶化できるような材料を用いることで形成することが可能となる。 The photoelectric conversion unit may be composed of a single layer in which a π electron acceptor and a π electron donor are uniformly mixed, or may be composed of a plurality of layers in which the mixing ratio of the π electron acceptor and the π electron donor is changed. Good. In this case, it can be formed by using a material that can be insolubilized after coating as described above.
光電変換部は、ゲル又は高分子中にπ電子ドナー及びπ電子アクセプターを分散して形成することができる。重合性官能基としては、炭素-炭素二重結合を有する基(例えばビニル、アリル、アクリレート、メタクリレート)などが挙げられる。 The photoelectric conversion part can be formed by dispersing a π electron donor and a π electron acceptor in a gel or a polymer. Examples of the polymerizable functional group include a group having a carbon-carbon double bond (for example, vinyl, allyl, acrylate, methacrylate).
以下、実施例を挙げて本発明を更に詳しく説明するが、本発明はこれら実施例に限定されるものではない。 EXAMPLES Hereinafter, although an Example is given and this invention is demonstrated in more detail, this invention is not limited to these Examples.
実施例1
幅2 mmのITO透明電極がパターン化された石英基板上に高分子導電膜(PEDOT:PSS)をスピンコートして製膜(3000 rpm, 60 sec)し、10 mgのP3HT、3 mgのC6PcH2、10 mgのPCBMを1 mlのクロロホルムに超音波洗浄機で撹拌して調製したものをPEDOT:PSS層上にスピンコートにより製膜(500 rpm, 60 sec)を行った。その上に真空蒸着により2 mm幅のマスクパターンを通してLiFバッファ層、Al電極を形成させた。素子の有効面積は2×2 mm2であった。
Example 1
A polymer conductive film (PEDOT: PSS) was spin-coated on a quartz substrate patterned with a 2 mm wide ITO transparent electrode (3000 rpm, 60 sec), 10 mg P3HT, 3 mg C6PcH 2 , 10 mg of PCBM prepared by stirring in 1 ml of chloroform with an ultrasonic washer was spin-coated onto a PEDOT: PSS layer (500 rpm, 60 sec). A LiF buffer layer and an Al electrode were formed thereon by vacuum deposition through a 2 mm wide mask pattern. The effective area of the device was 2 × 2 mm 2 .
この手法で有機活性層にC6PcH2を混合し作製した素子を分光したキセノンランプ光で励起し、室温・真空中にて外部量子効率を測定したところ、C6PcH2を混合しない素子では光電流が得られなかった650 ~ 800 nmの波長領域において大幅な光電流の改善が得られた。C6PcH2の吸収ピークである730 nmでは45%の外部量子効率が得られた。更に、擬似太陽光(AM1.5, 100 mW/cm2)照射下において、ソーラーシュミレータを用いて室温・真空中にて変換効率を測定したところ、C6PcH2を混合することで光吸収波長領域が拡大され、短絡光電流が1.4倍となり、変換効率が2.3%から3.0%に向上した(図2,図3)。 The device produced by mixing C6PcH2 into the organic active layer by this method was excited with a spectral xenon lamp light, and the external quantum efficiency was measured at room temperature and in vacuum. No photocurrent was obtained with the device not mixed with C6PcH2. In addition, a significant improvement in photocurrent was obtained in the 650 to 800 nm wavelength region. An external quantum efficiency of 45% was obtained at 730 nm, the absorption peak of C6PcH2. Furthermore, under simulated sunlight (AM1.5, 100 mW / cm 2 ) irradiation, the conversion efficiency was measured at room temperature and in vacuum using a solar simulator, and the light absorption wavelength range was expanded by mixing C6PcH2. As a result, the short-circuit photocurrent was increased by 1.4 times and the conversion efficiency was improved from 2.3% to 3.0% (FIGS. 2 and 3).
実施例2
10 mgのP3HT、C6PcH2(1mg, 2mg, 3mg, 4mg, 5mg, 6mg)、10 mgのPCBMを1 mlのクロロホルムに超音波洗浄機で撹拌して調製したものをPEDOT:PSS層上にスピンコートにより製膜(500 rpm, 60 sec)し、X線回折のデータを測定した。結果を図4に示す。P3HT:C6PcH2=10:3の条件において、回折ピークのカウント数も高く、かつP3HTおよC6PcH2が共存する状態となっていることが明らかになった。
Example 2
Spin 10 mg of P3HT, C6PcH 2 (1 mg, 2 mg, 3 mg, 4 mg, 5 mg, 6 mg), 10 mg of PCBM in 1 ml of chloroform with an ultrasonic cleaner and spin on the PEDOT: PSS layer A film was formed by coating (500 rpm, 60 sec), and X-ray diffraction data were measured. The results are shown in FIG. It was revealed that the number of diffraction peaks was high and P3HT and C6PcH2 coexisted under the conditions of P3HT: C6PcH 2 = 10: 3.
Claims (3)
ポリチオフェン誘導体がポリ(3-ヘキシルチオフェン)であり、
C60誘導体がPCBMであり、
第3の成分が液晶性フタロシアニン誘導体であって、一般式(I)
で表されるフタロシアニン誘導体である、バルクへテロ型有機光電変換素子。 In the bulk hetero organic photoelectric conversion element, the active layer is a mixture of a polythiophene derivative and a C60 derivative and a third component is added to the system .
The polythiophene derivative is poly (3-hexylthiophene),
C60 derivative is PCBM,
The third component is a liquid crystalline phthalocyanine derivative having the general formula (I)
A bulk hetero-type organic photoelectric conversion element, which is a phthalocyanine derivative represented by:
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JP2005203659A (en) * | 2004-01-19 | 2005-07-28 | Sony Corp | Photoelectric converting material and its manufacturing method, photoelectric converting element and its manufacturing method, and electronic device and its manufacturing method |
JP2007180190A (en) * | 2005-12-27 | 2007-07-12 | Toyota Central Res & Dev Lab Inc | Organic solar cell |
JP4817428B2 (en) * | 2006-03-24 | 2011-11-16 | 国立大学法人九州大学 | Photoresponsive electrode and organic solar cell using the same |
JP2008243841A (en) * | 2007-03-23 | 2008-10-09 | Univ Of Yamanashi | Composition, optical conductor thin film, and optical conductor element |
JP2009252768A (en) * | 2008-04-01 | 2009-10-29 | Fuji Electric Holdings Co Ltd | Organic solar cell and method of manufacturing the same |
JP5258037B2 (en) * | 2008-09-08 | 2013-08-07 | 国立大学法人京都大学 | Photoelectric conversion element, manufacturing method thereof, and solar cell |
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