JP5695001B2 - Optical fiber rotator, optical system and method for sample imaging - Google Patents
Optical fiber rotator, optical system and method for sample imaging Download PDFInfo
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- JP5695001B2 JP5695001B2 JP2012182412A JP2012182412A JP5695001B2 JP 5695001 B2 JP5695001 B2 JP 5695001B2 JP 2012182412 A JP2012182412 A JP 2012182412A JP 2012182412 A JP2012182412 A JP 2012182412A JP 5695001 B2 JP5695001 B2 JP 5695001B2
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- optical fiber
- electromagnetic radiation
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- collimator lens
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- 239000013307 optical fiber Substances 0.000 title claims description 117
- 230000003287 optical effect Effects 0.000 title claims description 32
- 238000003384 imaging method Methods 0.000 title description 19
- 238000000034 method Methods 0.000 title description 12
- 230000005670 electromagnetic radiation Effects 0.000 claims description 38
- 239000000835 fiber Substances 0.000 claims description 28
- 238000013519 translation Methods 0.000 claims description 10
- 238000001514 detection method Methods 0.000 claims description 8
- 210000004351 coronary vessel Anatomy 0.000 claims description 7
- 230000005540 biological transmission Effects 0.000 claims description 6
- 230000001681 protective effect Effects 0.000 claims description 3
- 238000001228 spectrum Methods 0.000 claims description 3
- 230000005855 radiation Effects 0.000 claims description 2
- 238000000926 separation method Methods 0.000 claims description 2
- 230000001012 protector Effects 0.000 claims 1
- 230000010287 polarization Effects 0.000 description 9
- 239000000523 sample Substances 0.000 description 8
- 238000012014 optical coherence tomography Methods 0.000 description 6
- 238000012634 optical imaging Methods 0.000 description 6
- 238000001727 in vivo Methods 0.000 description 5
- 230000003595 spectral effect Effects 0.000 description 4
- 239000012472 biological sample Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 244000208734 Pisonia aculeata Species 0.000 description 1
- 230000017531 blood circulation Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 210000002249 digestive system Anatomy 0.000 description 1
- 230000002526 effect on cardiovascular system Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002496 gastric effect Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000000338 in vitro Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000002697 interventional radiology Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 210000000276 neural tube Anatomy 0.000 description 1
- 210000000056 organ Anatomy 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000002792 vascular Effects 0.000 description 1
- 210000001835 viscera Anatomy 0.000 description 1
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Description
関連出願の相互参照
本発明は、米国特許出願番号60/624,282(2004年11月2日出願)の優先権を主張するものであり、その全開示内容を本明細書の一部としてここに援用する。
CROSS REFERENCE TO RELATED APPLICATIONS This invention claims priority to US patent application Ser. No. 60 / 624,282 (filed Nov. 2, 2004), the entire disclosure of which is hereby incorporated herein by reference. Incorporated into.
本発明は、光学画像形成に関し、詳しくは、光学ロータリ接合装置と、生物学的試料の画像形成のために、このロータリ接合装置を利用する光学画像形成システム及び方法に関する。 The present invention relates to optical imaging, and more particularly, to an optical rotary bonding apparatus and an optical imaging system and method that uses the rotary bonding apparatus for imaging biological samples.
患者の内臓の生体内光学画像形成は通常、光ファイバカテーテルによって行われている。 In vivo optical imaging of a patient's internal organs is typically performed with a fiber optic catheter.
心臓病学、神経心臓病学、インターベンショナル・ラジオロジ(介入放射線医学)、消化器病学等の多くの臨床分野では、r−φ断面画像を生成するために回転する光学カテーテルを必要とする。また、回転するカテーテルを長手方向に沿って引き戻し、対象となる組織塊の三次元画像を得ることができる。 Many clinical fields, such as cardiology, neurocardiology, interventional radiology, gastroenterology, require rotating optical catheters to generate r-φ cross-sectional images . In addition, the rotating catheter can be pulled back along the longitudinal direction to obtain a three-dimensional image of the target tissue mass.
本発明によると、本装置は、好ましくはロータリ接合を含み、これはカテーテルに機械的な作動をもたらし、そしてカテーテルと光学画像形成エンジンとの間の光学的な接続性をもたらす。この光学画像形成エンジンは、光周波数領域画像形成(「OFDI」)、及び、光学コヒーレンス・トモグラフィを実行することが可能であり、それぞれ米国特許仮出願番号60/514,769(2003年10月27日出願)及び国際特許出願番号PCT/US03/02349(2003年1月24日出願)に記載されている。 In accordance with the present invention, the apparatus preferably includes a rotary joint, which provides mechanical actuation to the catheter and provides optical connectivity between the catheter and the optical imaging engine. The optical imaging engine is capable of performing optical frequency domain imaging (“OFDI”) and optical coherence tomography, respectively, US Provisional Patent Application No. 60 / 514,769 (October 2003). 27th application) and International Patent Application No. PCT / US03 / 02349 (filed January 24, 2003).
よって、生物学的試料の画像形成を行うために、光学ロータリ接合装置と、このロータリ接合装置を用いた光学画像形成システム及び方法についての例示的な実施形態が提供される。このロータリ接合を用いて、静止した光ファイバポートと回転する光ファイバポートの間で光を伝送することができる。静止したファイバポートが画像形成エンジンに接続され、回転する光ファイバが光学的及び機械的に光ファイバカテーテルに接続されることで、カテーテルの末端において回転するプローブビームを生成できる。更に、このロータリ接合は並進ステージを含み、生物学的試料の3次元画像を得ることができる。このロータリ接合を使用する、例示的な画像形成システムは、血管の画像形成、心臓血管の画像形成、神経管の画像生成、及び消化器系の画像形成を包含する。 Thus, exemplary embodiments of an optical rotary bonding apparatus and an optical imaging system and method using the rotary bonding apparatus are provided for imaging biological samples. Using this rotary joint, light can be transmitted between a stationary optical fiber port and a rotating optical fiber port. A stationary fiber port is connected to the imaging engine, and a rotating optical fiber is optically and mechanically connected to a fiber optic catheter to produce a rotating probe beam at the end of the catheter. In addition, the rotary joint includes a translation stage to obtain a three-dimensional image of the biological sample. Exemplary imaging systems that use this rotary joint include vascular imaging, cardiovascular imaging, neural tube imaging, and digestive system imaging.
従って、本発明の例示的な実施形態によると、少なくとも2つの分離したファイバ間に電磁放射を伝送するための(並びに試料の画像形成のための)装置、システム及び方法が提供される。例えば、第1の光ファイバと第2の光ファイバについては、第1の光ファイバ及び/又は第2の光ファイバが回転可能に設けられる。第1の光ファイバ及び/又は第2の光ファイバの少なくとも一方の端部と通信する、少なくとも1つの第1の光学装置部を含むことができる。更に、この光学装置部の位置を制御して、第1及び第2の光ファイバの長手方向の軸を少なくともそれらの端部で位置合わせするように構成された、少なくとも1つの第2の装置部を含むことができる。また、第1及び/又は第2の光ファイバを毎秒10回転よりも大きな速度で回転させる、1つ以上の第3の光学装置部を提供することができる。第1の光ファイバ及び/又は第2の光ファイバをカテーテル装置部に接続するための、少なくとも1つの更なる装置部を含むことも可能であり、この更なる装置部は、少なくともその1つの端部に設けられた保護具を含むことができ、この保護具は、第1及び/又は第2の光ファイバを、第4の装置部を介してカテーテル装置部に接続する際に自動的に取り外される。 Thus, according to an exemplary embodiment of the present invention, an apparatus, system and method are provided for transmitting electromagnetic radiation (and for imaging a sample) between at least two separate fibers. For example, about the 1st optical fiber and the 2nd optical fiber, the 1st optical fiber and / or the 2nd optical fiber are provided rotatably. At least one first optical device portion in communication with at least one end of the first optical fiber and / or the second optical fiber may be included. And at least one second device portion configured to control the position of the optical device portion to align the longitudinal axes of the first and second optical fibers at least at their ends. Can be included. In addition, one or more third optical device units that rotate the first and / or second optical fibers at a speed higher than 10 rotations per second can be provided. It is also possible to include at least one further device portion for connecting the first optical fiber and / or the second optical fiber to the catheter device portion, the further device portion comprising at least one end thereof. A protective device provided on the part, which is automatically removed when the first and / or second optical fiber is connected to the catheter device part via the fourth device part. It is.
これらの例示的な装置、システム及び方法では並進装置を含んでもよい。この並進装置は、第1の光ファイバ、第2の光ファイバ及び/又は少なくとも1つの第2の装置部を、これらの長手方向の軸のうち、少なくとも1つにほぼ沿って平行移動させるように構成される。その速度は毎秒1ミリメートルよりも大きくされる。第3の装置部は、第1の光ファイバ及び/又は第2の光ファイバをその内部に位置付けることができる。第3の装置部(例えば、直流モータ又はステッピングモータ)は、その速度を検出するように構成されたエンコーダを含むことができる。また、第3の装置部を回転させるように構成されたモータは、第3の装置部に接続することができる。このようなモータは、その速度を検出するように構成されたエンコーダを含んでもよい。 These exemplary devices, systems and methods may include translation devices. The translation device translates the first optical fiber, the second optical fiber, and / or at least one second device portion substantially along at least one of these longitudinal axes. Composed. Its speed is made greater than 1 millimeter per second. The third device unit can position the first optical fiber and / or the second optical fiber therein. The third device portion (eg, a DC motor or a stepping motor) can include an encoder configured to detect its speed. In addition, a motor configured to rotate the third device unit can be connected to the third device unit. Such a motor may include an encoder configured to detect its speed.
本発明の他の例示的な実施形態によると、第2の装置部は第1及び第2のコリメータレンズを含むことができる。更には、第1及び/又は第2のコリメータレンズの焦点距離と、これに対応する第1及び第2の光ファイバの少なくとも一方の開口数との数値積が、約100μm(マイクロメートル)と1000μmとの間とされる。第1の光ファイバと第2の光ファイバとの間の光学的な伝送効率は約80%よりも大きくされる。この伝送効率は、第2のファイバの一回転周期内で、1%よりも高い精度を保つことができる。また、この装置は、後方反射が−55dBよりも小さい。 According to another exemplary embodiment of the present invention, the second device portion can include first and second collimator lenses. Further, the numerical product of the focal length of the first and / or second collimator lens and the corresponding numerical aperture of at least one of the first and second optical fibers is about 100 μm (micrometer) and 1000 μm. Between. The optical transmission efficiency between the first optical fiber and the second optical fiber is made greater than about 80%. This transmission efficiency can maintain an accuracy higher than 1% within one rotation period of the second fiber. This device also has a back reflection of less than -55 dB.
更に本発明の他の例示的な実施形態においては、少なくとも1つの第4の装置部(例えば波長掃引レーザ)が、少なくとも1つの第1電磁放射を試料に与え、少なくとも1つの第2電磁放射を参照物に与える。この少なくとも1つの第4の装置部によって与えられる放射の周波数は時間に伴って変化してもよい。また、第1電磁放射に関連する少なくとも1つの第3電磁放射と、第2電磁放射に関連する少なくとも1つの第4電磁放射との間の干渉を検出するために、1つ以上の第6の装置部を設けることができる。第1電磁放射及び第3電磁放射は第1及び/又は第2の光ファイバを介して伝送することができる。第4の装置部の時間に伴う変化は、特有の反復速度を有し、第1及び/又は第2の光ファイバは、第3の装置部によって、第4の装置部の特有の反復速度を250と5000との間の整数で除した速度にほぼ等しい、実質的に均一な回転速度で回転する。 In yet another exemplary embodiment of the present invention, at least one fourth device portion (eg, a wavelength swept laser) provides at least one first electromagnetic radiation to the sample and provides at least one second electromagnetic radiation. Give to reference. The frequency of radiation provided by this at least one fourth device part may vary with time. Also, one or more sixth electromagnetic radiations are detected to detect interference between at least one third electromagnetic radiation associated with the first electromagnetic radiation and at least one fourth electromagnetic radiation associated with the second electromagnetic radiation. A device portion can be provided. The first electromagnetic radiation and the third electromagnetic radiation can be transmitted via the first and / or second optical fiber. The change with time of the fourth device part has a characteristic repetition rate, and the first and / or second optical fiber has a characteristic repetition rate of the fourth device part by the third device part. Rotates at a substantially uniform rotational speed approximately equal to the speed divided by an integer between 250 and 5000.
また、試料から少なくとも1つの第1電磁放射を受け、参照物から少なくとも1つの第2電磁放射を受けるために、第5の装置部を設けることができる。第1電磁放射及び/又は第2電磁放射のスペクトルを周波数成分に分離する、少なくとも1つのスペクトル分離装置を含んでもよい。更に、それぞれの検出器が1つ以上の周波数成分のうちの少なくとも一部を検出可能な複数の検出器を含む、1つ以上の第8の検出装置部を設けることができる。第1電磁放射は、第1の光ファイバ及び/又は第2の光ファイバを介して伝送できる。第5の装置部は特有の読み出し反復速度を有し、第1及び/又は第2の光ファイバは、第3の装置部によって、第5の装置部の特有の読み出し反復速度を250と5000との間の整数で除した速度とほぼ等しい、実質的に均一な回転速度で回転することができる。このカテーテル装置部は、冠状動脈の中に挿入するように構成できる。 A fifth device portion can also be provided for receiving at least one first electromagnetic radiation from the sample and at least one second electromagnetic radiation from the reference. It may include at least one spectral separation device that separates the spectrum of the first electromagnetic radiation and / or the second electromagnetic radiation into frequency components. Furthermore, it is possible to provide one or more eighth detection device units, each of which includes a plurality of detectors capable of detecting at least a part of one or more frequency components. The first electromagnetic radiation can be transmitted via the first optical fiber and / or the second optical fiber. The fifth device part has a characteristic readout repetition rate, and the first and / or second optical fiber has a characteristic readout repetition rate of the fifth device part of 250 and 5000 by the third device part. Can be rotated at a substantially uniform rotational speed approximately equal to the speed divided by an integer between. The catheter device portion can be configured to be inserted into a coronary artery.
本発明の上記の目的、特徴、及び利点は、付属する請求項と関連して、以下に詳細に説明した本発明の実施形態を読むことで明らかとなる。そして、本発明の更なる目的、特徴、及び利点は、本発明の例示的な実施形態を示す添付図面と併せて、以下に詳述する本発明の記載から明らかとなる。 The above objects, features and advantages of the present invention will become apparent upon reading the embodiments of the invention described in detail below in connection with the appended claims. Further objects, features and advantages of the present invention will become apparent from the following description of the invention, taken in conjunction with the accompanying drawings showing exemplary embodiments of the invention.
別段の説明がない限りは、これらの図面を通して同じ符号や文字が、例示した実施形態について同様の特徴、要素、部品又は部分を示すために用いられる。更に、図面を参照して本発明を詳細に説明するが、これは例示した実施形態と関連して行う。 Unless otherwise described, the same reference numerals and letters are used throughout the drawings to indicate similar features, elements, parts or portions for the illustrated embodiments. Further, the present invention will be described in detail with reference to the drawings, which are performed in connection with the illustrated embodiment.
光ファイバコリメータは従来からある部品であり、図1(a)乃至図1(c)に示すように、光ファイバ10の先端から出射された光を集光ビーム16へと変化させるため、又は集光ビームの光を光ファイバに入射させるために用いられる。通常、非球面レンズ11又は勾配屈折率(GRIN又はSELFOC)レンズ12を用いることができる(図1(a)及び図1(b)参照)。一対のコリメータを用いて、あるファイバ10から、他のファイバ20へと光学ビームを最小限の挿入損失及び後方反射で伝送することが可能である(図1(c)参照)。この従来の装置構成は、偏光子、フィルタ及びアイソレータのような、他の自由空間光学素子をファイバ化するために広く用いられてきた。
The optical fiber collimator is a conventional part, and is used to change the light emitted from the tip of the
図2は、一対のコリメータ12、28を用いた、本発明によるロータリ接合の一実施形態を例示した側面図である。一方のコリメータレンズ18は、管状構造体26に取り付けられている。ファイバ20の末端は、スリーブ34内に位置するコネクタ・フェルール28へと挿入される。コネクタ・ハウジングケース33とフェルール32を備えたマッチング・コネクタがスリーブ34に挿入される。この例示的な構成により、2つのファイバ20と30との間の光伝送を円滑に行える。管状構造体26は、ベアリング36を介してハウジング39に接続される。また、管状構造体26は、ベルト又はギア38を介して回転モータ37に接続される。モータ37は管状構造体26を回転させ、従って、コリメータ18を回転させる。ハウジング39は、引き戻し操作のために、固定レール41上に設置される並進ステージ40に取り付けられる。このロータリ接合によって、回転しないファイバ10と回転するファイバ30との間の光伝送がもたらされる一方で、代替のファイバ30をコネクタハウジング33において交換できるようになる。
FIG. 2 is a side view illustrating an embodiment of the rotary joint according to the present invention using a pair of
光ファイバ10、20、30はシングルモード光ファイバが好ましいが、マルチモードファイバ、偏光保持ファイバ、又はフォトニック結晶ファイバでもよい。ファイバ10、20はレンズ12、18に融着され、これにより、大幅に後方反射を減少させてスループットを高める可能性をもつ。これに代わって、コリメータレンズ12、18は、非球面屈折レンズでもよいし、又は軸方向の勾配屈折率レンズでもよい。レンズ12、18の光学面には、使用する光の波長範囲において反射防止コーティングを施してもよい。この波長範囲は、800±100nm(ナノメートル)、1000乃至1300nm、1600乃至1800nm、又は他の範囲である。レンズ12、18の焦点距離については、100μmから1000μmのビーム径を与えるように選択することができる。ファイバ10、20、30からの全スループットは70%より大きく、後方反射は−55dBより小さい。2つのコリメータが正確に同軸となるように位置合わせを行うことにより、スループットの均一性と、一回転周期に亘って約1%よりも良好な後方反射が得られる。管状構造体26は中空モータ軸でもよく、該モータ37は管状構造体26と同軸に位置され、この場合に、ベルト又はギア38は不要である。コネクタ28、32の研磨角度については通常、面の法線に対して4°と10°との間とし、後方反射を最小限に抑える。コネクタハウジング33は、好ましくは、SCタイプと同様のスナップ式接続を提供し、組み込み式の端部保護ゲートを備える。図3は、本発明によるロータリ接合部の例示的な実施形態を、より詳細に示している。
The
図4は、本発明による、生体外や生体内で生物医学的な画像形成を行うための、光ファイバカテーテルの例示的な実施形態を示す。例えば、光ファイバはシャフト45に挿入され、この末端には、スペーサ50、レンズ52、及びプリズム60等のビーム集光用光学部品が取り付けられ、焦点を結ぶビーム62が生成される。光ファイバは、好ましくはシングルモードファイバであり、コア42、クラッド43及びジャケット44から構成される。ビーム集光用光学部品50、52、60及びシャフト45は、互いに強固に結合されることで、プローブビーム62が均一な回転速度をもって回転できるようにする。保護シース48はロータリ接合部のハウジング39に接続されることで、試料70内部で相対的に静止して回転軸による損傷から試料を保護し、またその逆も同様である。シャフト45とシース48との間隙46は、屈折率を整合させる液体で満たすことができる。血管内又消化管の画像形成等の用途ではバルーンを用いるが、これは、カテーテルを管状の器官の中心に正確に位置決めし、及び/又は血流を一時的に阻止するためである。
FIG. 4 illustrates an exemplary embodiment of a fiber optic catheter for performing biomedical imaging in vitro or in vivo according to the present invention. For example, the optical fiber is inserted into the shaft 45, and optical components for beam condensing such as a spacer 50, a lens 52, and a prism 60 are attached to this end, and a focused beam 62 is generated. The optical fiber is preferably a single mode fiber, and includes a core 42, a clad 43 and a jacket 44. The beam condensing optical components 50, 52, 60 and the shaft 45 are firmly coupled to each other so that the probe beam 62 can be rotated at a uniform rotational speed. The protective sheath 48 is connected to the
図5は、光周波数領域画像形成(OFDI)システムの例示的な実施形態を示し、該システムは、本発明によるロータリ接合及びカテーテルを使用することができる。例えば、光源は波長掃引レーザ80とされる。ロータリ接合部39は干渉計の試料アームに接続することができ、この干渉計は、10/90カプラ82、減衰器84、偏光コントローラ86、サーキュレータ88、89、長さ整合ファイバ90、コリメータレンズ92、及び参照ミラー94を含む。検出回路は、50/50カプラ96、偏光コントローラ98、偏光ビームスプリッタ100、101、双平衡受光器103、104、電気フィルタ106、107、及びデータ取得基板110を含むことができる。このデータ取得基板110は、コンピュータ112に接続され、トリガー回路114、モータコントローラ94、及び並進ステージ41、42と通信することができる。OCTの動作原理は当分野では周知である。また、双平衡検出と偏光分岐検出(Polarization Diverse Detection)を同時に提供するために、偏光コントローラ98は、カプラからの2つのファイバ経路の複屈折を整合させることができるように構成される。参照アームの他の偏光コントローラ86を調整し、偏光ビームスプリッタ101、102のそれぞれにおいて参照光を等しい比率に分離することができる。スプリッタの後段における、対応する偏光状態(x又はyで示す)については、双平衡受光器103、104へと向けられる。
FIG. 5 illustrates an exemplary embodiment of an optical frequency domain imaging (OFDI) system that can use a rotary joint and catheter according to the present invention. For example, the light source is a wavelength swept
図5に示すシステムの例示的な実施形態を用いて、生体内でのヒトの冠状動脈の血管内OFDIを実施することができる。PCデータ取得基板(例えば、National Instruments社の6115)を用い、ローパスフィルタ処理後の受信信号が10MHzのサンプリング周波数でデジタル化される。レーザのチューニングレート36kHzにおいて、本システムの検出感度は、任意の偏光状態で105dB(デシベル)よりも大きく、距離分解能は(例えば空気中で)12μmとされる。ロータリ接合部39には、毎秒100回転より大きな動作範囲をもつ高速直流モータを用いることができる。カテーテル30には、その末端に勾配屈折率レンズ及び90度プリズムを用い、25μmの横分解能を得ることができる。ロータリ接合部は、モータが付設された直動並進ステージ41、42に取り付けられ、長手方向における3次元の引き戻し(pull−back)画像化を行うことが可能である。このような実験に用いられる取得基板での比較的遅いデジタル化レートでは、OFDIの掃引源の潜在能力を全て発揮させるには十分でない虞がある。最大10MHzのサンプリングレートでは、画像形成速度と軸方向の画像サイズがともに損なわれる虞がある。OFDIシステム及びカテーテルを用いる画像形成を実証するために、レーザは18kHzの減少したレートで動作可能であり、2.2mmの軸走査深さに対応するレーザのスペクトル掃引について512個のサンプルが得られた(例えば空気中)。カテーテルを毎秒36回転で回転させ、7.2mm/秒の速度で長手方向に引き戻す際に、3秒間の時間に亘って、固定されたヒト冠状動脈70の画像を毎秒36フレームで取得することができる。図6の断面Aは、図5のOFDIシステムを用いて得られる、256個の半径方向ピクセルをもつ500A−linesで構成される典型的な画像を示している。3秒間で得られた例示的な3次元画像を図6Bに示す。
The exemplary embodiment of the system shown in FIG. 5 can be used to perform intravascular OFDI of a human coronary artery in vivo. Using a PC data acquisition board (for example, 6115 of National Instruments), the received signal after low pass filter processing is digitized at a sampling frequency of 10 MHz. At a laser tuning rate of 36 kHz, the detection sensitivity of the system is greater than 105 dB (decibel) in any polarization state and the distance resolution is 12 μm (eg in air). For the rotary joint 39, a high-speed DC motor having an operating range larger than 100 revolutions per second can be used. The
図7は、本発明によるロータリ接合部及びカテーテルを用いた、スペクトル領域OCTシステム(SD−OCT)の例示的な実施形態を示す。例えば、光源120は、低コヒーレンス広帯域光源、パルス性広帯域光源、又はカメラ122の読み出し速度に同期して反復動作する可変波長光源を含むことができる。カメラ122は、電荷結合素子又はCMOS撮像素子に基づく検出器アレイ124を用いる。干渉信号は、コリメータ126、グレーティング(回折格子)128等の回折素子、及びフォーカシングレンズ130を用いて検出器アレイ124に導かれる。OCTの動作原理は当分野で周知である。
FIG. 7 shows an exemplary embodiment of a spectral domain OCT system (SD-OCT) using a rotary joint and catheter according to the present invention. For example, the
一例として、ヒト冠状動脈70の画像形成を、光ファイバカテーテルを用いて実施できる。図8は、例えばCW増幅自然放出光源(A及びB)、及び、同じ18.94kHzのAライン取得レートの掃引源(C及びD)を用いて得ることが可能な画像を示す。画像Aと画像Bとの相違、及び画像Cと画像Dとの相違は、カテーテルの回転速度であり、A及びCの場合は9.5rpsであり、1画像当たり2000A−linesに相当し、またB及びDの場合は37.9rpsであり、1画像当たり500A−linesに相当する。 As an example, human coronary artery 70 can be imaged using a fiber optic catheter. FIG. 8 shows images that can be obtained using, for example, a CW amplified spontaneous emission source (A and B) and the same 18.94 kHz A-line acquisition rate sweep source (C and D). The difference between images A and B and between images C and D is the rotational speed of the catheter, 9.5 rps for A and C, corresponding to 2000 A-lines per image, and In the case of B and D, it is 37.9 rps, which corresponds to 500 A-lines per image.
前述の説明は単に本発明の原理を例示したに過ぎない。本明細書の説明を考慮して、記載された実施形態に種々の変更や改変を加えることは、当業者にとって明白である。例えば、ここに説明した本発明は、米国特許仮出願番号60/514,769(2003年10月27日出願)及び国際特許出願番号PCT/US03/02349(2003年1月24日出願)に説明した例示的な方法、システム、及び装置に有用であり、これらの開示内容については、その全体をここに援用する。 The foregoing description is merely illustrative of the principles of the present invention. Various changes and modifications to the described embodiments will be apparent to those skilled in the art in view of the description herein. For example, the invention described herein is described in US Provisional Patent Application No. 60 / 514,769 (filed Oct. 27, 2003) and International Patent Application No. PCT / US03 / 02349 (filed Jan. 24, 2003). Which are useful in the exemplary methods, systems, and apparatus described above, the disclosures of which are incorporated herein in their entirety.
実際、本発明の例示的な実施形態による装置、システム及び方法は、任意のOCTシステム、OFDIシステム又は他の画像形成システムに用いることが可能である。従って、当業者にとっては、本明細書に明確に提示又は説明されていなくとも、本発明の原理を具現化する数多くのシステム、装置、及び方法に工夫を凝らすことが可能であり、これは本発明の趣旨と範囲内に含まれることが理解されるであろう。また、上記に引用した文献、特許及び特許出願については、本明細書の一部としてその全体をここに援用する。 Indeed, the apparatus, system and method according to exemplary embodiments of the present invention can be used in any OCT system, OFDI system or other imaging system. Thus, those skilled in the art will be able to devise numerous systems, devices and methods that embody the principles of the present invention, even if not explicitly presented or described herein. It will be understood that it is within the spirit and scope of the invention. In addition, the literature, patents and patent applications cited above are incorporated herein in their entirety as part of this specification.
Claims (23)
第1の光ファイバ及び第2の光ファイバのうち、少なくとも一方が回転可能とされる、第1の光ファイバ及び第2の光ファイバと、
前記第1の光ファイバ及び前記第2の光ファイバのうちの少なくとも一方の一端部と通信する、1つ以上の第1の光学装置部と、
前記1つ以上の第1の光学装置部の位置を制御して、前記第1の光ファイバ及び前記第2の光ファイバの長手方向の軸を、少なくともそれらの端部で位置合わせするように構成された1つ以上の第2の装置部と、
前記第1の光ファイバ及び前記第2の光ファイバのうちの少なくとも一方を毎秒100回転よりも大きな速度で回転させるように構成された1つ以上の第3の装置部と、
前記第1の光ファイバ、前記第2の光ファイバ、及び前記1つ以上の第2の装置部のうちの少なくとも1つを、これらの長手方向の軸のうちの少なくとも1つにほぼ沿って平行移動させるように構成された1つ以上の並進装置と、を備える、装置。 An apparatus for transmitting electromagnetic radiation between at least two separate fibers,
A first optical fiber and a second optical fiber in which at least one of the first optical fiber and the second optical fiber is rotatable; and
One or more first optical device sections communicating with one end of at least one of the first optical fiber and the second optical fiber;
The position of the one or more first optical device sections is controlled to align the longitudinal axes of the first optical fiber and the second optical fiber at least at their ends. One or more second device units,
One or more third device portions configured to rotate at least one of the first optical fiber and the second optical fiber at a speed greater than 100 revolutions per second;
Parallel at least one of the first optical fiber, the second optical fiber, and the one or more second device portions substantially along at least one of their longitudinal axes. One or more translation devices configured to move.
第1の光ファイバ及び第2の光ファイバのうち、少なくとも一方が回転可能とされる、第1の光ファイバ及び第2の光ファイバと、
前記第1の光ファイバ及び前記第2の光ファイバのうちの少なくとも一方の一端部と通信する、1つ以上の第1の光学装置部と、
前記1つ以上の第1の光学装置部の位置を制御して、前記第1の光ファイバ及び前記第2の光ファイバの長手方向の軸を、少なくともそれらの端部で位置合わせするように構成された1つ以上の第2の装置部と、
前記第1の光ファイバ及び前記第2の光ファイバのうちの少なくとも一方を回転させるように構成された1つ以上の第3の装置部と、
前記第1の光ファイバ、前記第2の光ファイバ、及び前記1つ以上の第2の装置部のうちの少なくとも1つを、これらの長手方向の軸のうちの少なくとも1つにほぼ沿って平行移動させるように構成された1つ以上の並進装置と、を備え、
前記少なくとも1つの第2の装置部は、第1のコリメータレンズ及び第2のコリメータレンズを含み、
前記第1のコリメータレンズ及び前記第2のコリメータレンズのうちの少なくとも一方の焦点距離と、これに対応する前記第1の光ファイバ及び前記第2の光ファイバのうちの少なくとも一方の開口数との数値積が、50μmと2000μmとの間である、装置。 An apparatus for transmitting electromagnetic radiation between at least two separate fibers,
A first optical fiber and a second optical fiber in which at least one of the first optical fiber and the second optical fiber is rotatable; and
One or more first optical device sections communicating with one end of at least one of the first optical fiber and the second optical fiber;
The position of the one or more first optical device sections is controlled to align the longitudinal axes of the first optical fiber and the second optical fiber at least at their ends. One or more second device units,
One or more third device portions configured to rotate at least one of the first optical fiber and the second optical fiber;
Parallel at least one of the first optical fiber, the second optical fiber, and the one or more second device portions substantially along at least one of their longitudinal axes. One or more translation devices configured to move, and
The at least one second device unit includes a first collimator lens and a second collimator lens;
The focal length of at least one of the first collimator lens and the second collimator lens and the numerical aperture of at least one of the first optical fiber and the second optical fiber corresponding to the focal length A device whose numerical product is between 50 μm and 2000 μm.
第1の光ファイバ及び第2の光ファイバのうち、少なくとも一方が回転可能とされる、第1の光ファイバ及び第2の光ファイバと、
前記第1の光ファイバ及び前記第2の光ファイバのうちの少なくとも一方の一端部と通信する、1つ以上の第1の光学装置部と、
前記1つ以上の第1の光学装置部の位置を制御して、前記第1の光ファイバ及び前記第2の光ファイバの長手方向の軸を、少なくともそれらの端部で位置合わせするように構成された1つ以上の第2の装置部と、
前記第1の光ファイバ及び前記第2の光ファイバのうちの少なくとも一方を回転させるように構成された1つ以上の第3の装置部と、
前記第1の光ファイバ、前記第2の光ファイバ、及び前記1つ以上の第2の装置部のうちの少なくとも1つを、これらの長手方向の軸のうちの少なくとも1つにほぼ沿って平行移動させるように構成された1つ以上の並進装置と、を備え、
前記第2の光ファイバは、前記第1の光ファイバに付随し、間隙によって前記第1の光ファイバから分離され、
前記第2の装置部は、前記電磁放射のモードフィールド領域を圧縮させるように適合された第1のレンズ部分と、前記第1のレンズ部分に付随し、前記電磁放射のモードフィールド領域を拡大させるように適合された第2のレンズ部分とを含む、装置。 An apparatus for transmitting electromagnetic radiation between at least two separate fibers,
A first optical fiber and a second optical fiber in which at least one of the first optical fiber and the second optical fiber is rotatable; and
One or more first optical device sections communicating with one end of at least one of the first optical fiber and the second optical fiber;
The position of the one or more first optical device sections is controlled to align the longitudinal axes of the first optical fiber and the second optical fiber at least at their ends. One or more second device units,
One or more third device portions configured to rotate at least one of the first optical fiber and the second optical fiber;
Parallel at least one of the first optical fiber, the second optical fiber, and the one or more second device portions substantially along at least one of their longitudinal axes. One or more translation devices configured to move, and
The second optical fiber is associated with the first optical fiber and separated from the first optical fiber by a gap;
The second device portion is associated with a first lens portion adapted to compress the mode field region of the electromagnetic radiation and the first lens portion, and expands the mode field region of the electromagnetic radiation. And a second lens portion adapted to.
第1の光ファイバ及び第2の光ファイバのうち、少なくとも一方が回転可能とされる、第1の光ファイバ及び第2の光ファイバと、
前記第1の光ファイバ及び前記第2の光ファイバのうちの少なくとも一方の一端部と通信する、1つ以上の第1の光学装置部と、
前記1つ以上の第1の光学装置部の位置を制御して、前記第1の光ファイバ及び前記第2の光ファイバの長手方向の軸を、少なくともそれらの端部で位置合わせするように構成された1つ以上の第2の装置部と、
前記第1の光ファイバ及び前記第2の光ファイバのうちの少なくとも一方を回転させるように構成された1つ以上の第3の装置部と、
前記第1の光ファイバ、前記第2の光ファイバ、及び前記1つ以上の第2の装置部のうちの少なくとも1つを、これらの長手方向の軸のうちの少なくとも1つにほぼ沿って平行移動させるように構成された1つ以上の並進装置と、
前記第1の光ファイバ及び前記第2の光ファイバのうちの少なくとも一方をカテーテル装置部に接続するように構成された、1つ以上の装置部と、を備え、
前記1つ以上の装置部は、少なくともその一端部に設けられた保護具を含み、
前記保護具は、前記第1の光ファイバ及び前記第2の光ファイバの少なくとも一方を、前記1つ以上の装置部を介して前記カテーテル装置部に接続する際に、自動的に取り外される、装置。 An apparatus for transmitting electromagnetic radiation between at least two separate fibers,
A first optical fiber and a second optical fiber in which at least one of the first optical fiber and the second optical fiber is rotatable; and
One or more first optical device sections communicating with one end of at least one of the first optical fiber and the second optical fiber;
The position of the one or more first optical device sections is controlled to align the longitudinal axes of the first optical fiber and the second optical fiber at least at their ends. One or more second device units,
One or more third device portions configured to rotate at least one of the first optical fiber and the second optical fiber;
Parallel at least one of the first optical fiber, the second optical fiber, and the one or more second device portions substantially along at least one of their longitudinal axes. One or more translation devices configured to move;
One or more device portions configured to connect at least one of the first optical fiber and the second optical fiber to a catheter device portion; and
The one or more device units include a protector provided at least at one end thereof,
The protective device is automatically removed when connecting at least one of the first optical fiber and the second optical fiber to the catheter device portion via the one or more device portions. .
前記少なくとも1つの第1電磁放射に関連する少なくとも1つの第3電磁放射と、前記少なくとも1つの第2電磁放射に関連する少なくとも1つの第4電磁放射との間の干渉を検出する、1つ以上の第5の装置部と、を更に備え、前記第1電磁放射及び前記第3電磁放射が、前記第1の光ファイバ及び前記第2の光ファイバのうちの少なくとも一方を介して伝送される、請求項10に記載の装置。 One or more fourth device portions that provide at least one first electromagnetic radiation to the sample and at least one second electromagnetic radiation to the reference, the frequency of the radiation provided by the device portion over time One or more fourth device portions adapted to change;
One or more for detecting interference between at least one third electromagnetic radiation associated with the at least one first electromagnetic radiation and at least one fourth electromagnetic radiation associated with the at least one second electromagnetic radiation; A fifth device portion, wherein the first electromagnetic radiation and the third electromagnetic radiation are transmitted via at least one of the first optical fiber and the second optical fiber. The apparatus according to claim 10.
前記第1電磁放射、前記第2電磁放射、及び前記第1電磁放射と前記第2電磁放射の組み合わせのうち、少なくとも1つのスペクトルを周波数成分に分離する、1つ以上のスペクトル分離装置と、
複数の検出器を含む1つ以上の第5の検出装置部であって、各検出器が1つ以上の前記周波数成分の少なくとも一部を検出可能な第5の検出装置部と、を更に備え、前記少なくとも1つの第1電磁放射が、前記第1の光ファイバ及び前記第2の光ファイバの少なくとも一方を介して伝送される、請求項10に記載の装置。 A fourth device portion for receiving at least one first electromagnetic radiation from the sample and receiving at least one second electromagnetic radiation from the reference;
One or more spectrum separation devices for separating at least one spectrum into frequency components of the first electromagnetic radiation, the second electromagnetic radiation, and the combination of the first electromagnetic radiation and the second electromagnetic radiation;
One or more fifth detection device units including a plurality of detectors, each detector further comprising a fifth detection device unit capable of detecting at least a part of the one or more frequency components. The apparatus of claim 10, wherein the at least one first electromagnetic radiation is transmitted through at least one of the first optical fiber and the second optical fiber.
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US6134003A (en) * | 1991-04-29 | 2000-10-17 | Massachusetts Institute Of Technology | Method and apparatus for performing optical measurements using a fiber optic imaging guidewire, catheter or endoscope |
US5872879A (en) * | 1996-11-25 | 1999-02-16 | Boston Scientific Corporation | Rotatable connecting optical fibers |
EP0971626A1 (en) * | 1997-03-06 | 2000-01-19 | Massachusetts Institute Of Technology | Instrument for optically scanning of living tissue |
US6615072B1 (en) * | 1999-02-04 | 2003-09-02 | Olympus Optical Co., Ltd. | Optical imaging device |
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US6749344B2 (en) * | 2001-10-24 | 2004-06-15 | Scimed Life Systems, Inc. | Connection apparatus for optical coherence tomography catheters |
US20040092829A1 (en) * | 2002-11-07 | 2004-05-13 | Simon Furnish | Spectroscope with modified field-of-view |
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