JP5692991B2 - Exposure apparatus and device manufacturing method using the same - Google Patents

Description

  The present invention relates to an exposure apparatus and a device manufacturing method using the same.

  In a lithography process, which is a manufacturing process for semiconductor devices, liquid crystal display devices, and the like, an exposure apparatus uses a pattern of an original (reticle or mask) as a photosensitive substrate (a resist layer is formed on the surface) via a projection optical system. A transfer device to a wafer, a glass plate, or the like). For example, in a projection exposure apparatus for manufacturing a semiconductor, as the resolution of a projection pattern is improved, higher accuracy is required even in an alignment process for relatively aligning a reticle and a wafer. Prior to this alignment, the exposure apparatus first performs pre-alignment processing for aligning the wafer, which has been transferred from the carrier by the transfer device, at a predetermined position. Here, if the mounting position of the sensor serving as a reference for pre-alignment is different between the manufacturing apparatuses, there is a variation in the alignment of the wafer with respect to the wafer chuck of the processing unit. As a result, when the reticle and the wafer on the wafer chuck are precisely aligned after pre-alignment, the position detection mark provided on the wafer surface may not enter the measurement region of the microscope. Therefore, for example, Patent Document 1 includes a first stage and a second stage, and after performing pre-alignment on the first stage with respect to the reference sample, the amount of deviation is detected on the second stage and the correction is performed. An alignment method for performing alignment based on values is disclosed.

Japanese Patent No. 3372633

  However, in the alignment method of Patent Document 1, the stage operation such as alignment search and feed amount correction increases, so the throughput of the exposure apparatus decreases. This stage feed amount correction method corrects the position detection mark that is first burned onto the wafer, and is considered for variations in the wafer position relative to the wafer chuck between manufacturing apparatuses. Not. Furthermore, in a conventional exposure apparatus for manufacturing a semiconductor, since the wafer itself is deformed as the exposure process proceeds, the wafer is flattened by vacuum suction using a wafer chuck. The position and shape may be greatly affected.

  The present invention has been made in view of such a situation, and even a wafer deformed through a plurality of exposure steps can be aligned with high accuracy, and high throughput can be easily obtained. It is an object of the present invention to provide an exposure apparatus.

An exposure apparatus according to an embodiment of the present invention includes an illumination system that introduces light from a light source and irradiates light on an alignment mark formed on an object to be measured, and an imaging system that forms an image of light from the alignment mark An exposure apparatus that performs at least one of rotation, shift, and magnification correction on a measurement object based on position information of an alignment mark detected by the position detection system, The imaging system includes an image detection element that detects an alignment mark signal from light, a measurement region of the image detection element in the measurement object is rectangular, and a first direction from the rotation center of the measurement object toward the alignment mark A mechanism is provided that rotates the image detection element so that the long side direction of the measurement region faces the second direction orthogonal to each other.

  According to the present invention, even if a rotation error occurs in the measurement object and a deviation amount occurs in the position of the alignment mark with respect to the reference position, the measurement region of the image detection element is in the direction in which the error occurs. On the other hand, since it is wide, the alignment mark can be detected with high accuracy.

It is the schematic which shows the structure of the exposure apparatus which concerns on embodiment of this invention. It is the schematic which shows an off-axis alignment detection system and its attached structure. It is the schematic which shows the structure of a CCD camera. It is the schematic which shows the structure of the exposure apparatus which implements baseline measurement. It is the schematic which shows the measurement area | region of the image detection element with respect to an alignment mark.

  Hereinafter, embodiments for carrying out the present invention will be described with reference to the drawings.

  First, the configuration of the exposure apparatus of the present invention will be described. FIG. 1 is a schematic view showing the arrangement of an exposure apparatus according to an embodiment of the present invention. The exposure apparatus in the present embodiment is an apparatus that performs an exposure process on a wafer that is a substrate to be used, which is used in a semiconductor device manufacturing process, and adopts a step-and-repeat method or a step-and-scan method. This is a scanning projection exposure apparatus. In the following drawings, the Z axis is taken in parallel to the optical axis of the projection optical system, the Y axis is taken in the scanning direction of the wafer during scanning exposure in a plane perpendicular to the Z axis, and is orthogonal to the Y axis. An explanation will be given taking the X axis in the non-scanning direction. The exposure apparatus 1 controls an illumination optical system 2, a reticle stage 4 that holds a reticle 3, a projection optical system 5, a wafer stage 7 that holds a wafer 6, and each component of the exposure apparatus 1 (not shown). And a control system.

  The illumination optical system 2 is a device that includes a light source 10 and illuminates a reticle 3 on which a transfer circuit pattern is formed. For example, a pulse light source (laser) is used as the light source 10. Usable lasers include an ArF excimer laser having a wavelength of about 193 nm, a KrF excimer laser having a wavelength of about 248 nm, and an F2 excimer laser having a wavelength of about 157 nm. The type of laser is not limited to the excimer laser, and for example, a YAG laser may be used, and the number of lasers is not limited. When a laser is used as the light source 10, it is preferable to use a light beam shaping optical system that shapes a parallel light beam from the laser light source into a desired beam shape and an incoherent optical system that makes a coherent laser incoherent. Further, the light source that can be used for the light source 10 is not limited to the pulse light source, and a continuous light source such as one or a plurality of mercury lamps or xenon lamps can also be used.

  Further, the illumination optical system 2 includes an illumination light shaping optical system 11, a fly-eye lens 12, a condenser lens 13, a fixed field stop 14, a variable field stop 15, and a relay lens 16. The illumination light shaping optical system 11 is an optical system that sets a light beam diameter of illumination light emitted from the light source 10 to a predetermined size, and is configured by stacking a fly-eye lens 12 and two sets of cylindrical lens array plates. Including integrators. The illumination light shaping optical system 11 may be replaced with an optical rod or a diffraction element. The fly-eye lens 12 is an optical element that forms a large number of secondary light sources. The condenser lens 13 is an optical element that condenses the secondary light source formed by the fly-eye lens 12. Each of the field stops 14 and 15 is an optical stop including a circular stop, an annular illumination stop for modified illumination, a quadrupole illumination stop, and the like. Further, the relay lens 16 is an optical element that conjugates the pattern forming surface of the reticle 3 and the variable field stop 15. In FIG. 1, the fixed field stop 14 is disposed closer to the condenser lens 13 than the variable field stop 15, but may be disposed closer to the relay lens 16. Here, on / off at the time of exposure processing is generally switched by controlling the power supplied from the power supply device for the pulse light source when a pulse light source is used, while illumination is used when a continuous light source is used. Switching is performed by a shutter in the light shaping optical system 11. However, as shown in FIG. 1, when the variable field stop 15 which is a movable blind is installed, the variable field stop 15 may be switched by opening and closing.

  The reticle 3 is, for example, a quartz glass original plate on which a circuit pattern to be transferred is formed. The reticle stage 4 is an original stage movable in the XY directions, and is an apparatus for holding and positioning the reticle 3. When performing scanning exposure, the reticle stage 4 is scan-driven in the Y-axis direction. The reticle stage 4 further includes a movable mirror 17 and a laser interferometer 18 that detects the position of the reticle stage 4 by projecting a laser beam onto the movable mirror 17 and receiving the reflected light.

  The projection optical system 5 projects and exposes the pattern on the reticle 3 illuminated with the exposure light from the illumination optical system 2 onto the wafer 6 at a predetermined magnification (for example, 1/4 or 1/5). As the projection optical system 5, an optical system composed of only a plurality of optical elements or an optical system (catadioptric optical system) composed of a plurality of optical elements and at least one concave mirror can be employed. Alternatively, as the projection optical system 5, an optical system composed of a plurality of optical elements and at least one diffractive optical element such as a kinoform, an all-mirror optical system, or the like can be employed.

  The wafer 6 is a substrate to be processed made of single crystal silicon and coated with a resist (photosensitive agent) on the surface, and is a measurement object in the present embodiment. The wafer stage 7 is a substrate stage that can move in the XYZ directions, and is an apparatus for holding and positioning the wafer 6. Here, when performing scanning exposure, the wafer stage 7 is scan-driven in the Y-axis direction, like the reticle stage 4. In the case of normal scanning exposure, the reticle stage 4 and the wafer stage 7 are scan-driven in opposite directions. On the other hand, in the case of static exposure, the reticle stage 4 and the wafer stage 7 are not driven during exposure. Further, the wafer stage 7 includes a movable mirror 19 and a laser interferometer 20 that detects the position and vibration of the wafer stage 7 by projecting a laser beam onto the movable mirror 19 and receiving the reflected light. In some cases, a laser interferometer that detects the position of the wafer stage 7 with respect to the Z-axis and vibrations may be provided above the wafer stage 7.

  The control system is a control unit that controls each component such as an optical system and a stage system in order to perform exposure processing and driving of the reticle 3 and the wafer 6 in the exposure processing. The control system implements the operation of the exposure apparatus 1 of the present embodiment in the form of a sequence or program, and is composed of a computer having a storage device composed of a magnetic storage device, a memory, etc., a sequencer, and the like. The The control system may be integrated with the exposure apparatus 1 main body, or may be installed at a location different from the installation location of the exposure apparatus 1 main body and controlled remotely.

  Further, the exposure apparatus 1 includes an off-axis position detection system (alignment detection system, hereinafter referred to as “OA detection system”) 21 so that the detection unit is positioned above the wafer 6. FIG. 2 is a schematic diagram showing the OA detection system 21 and its attached configuration. In FIG. 2, the same components as those in FIG. First, the OA detection system 21 includes a light source unit 30 for introducing an illumination light beam IL into the OA detection system 21 and a fiber 31 for guiding the illumination light beam IL from the light source unit 30 to an illumination system 32 described later. . Further, as a control system constituting the above-described exposure apparatus 1, a main control system 33 that controls the OA detection system 21 and the light source unit 30, a stage control system 34 that controls the driving of the wafer stage 7, and various drive operation commands. A computer 35 for storing and calculating is illustrated in FIG.

  The light source unit 30 includes, for example, a light source including a HeNe laser 36 and a halogen lamp 37, a light source switching mirror 38, and a condensing optical system 39 that condenses the light beam from the light source at the incident end of the fiber 31. In this case, the main control system 33 controls the driving of the light source switching mirror 38 based on an instruction from the computer 35 which light source of the HeNe laser 36 or the halogen lamp 37 is used. That is, when the HeNe laser 36 is selected as the light source, the light source switching mirror 38 is retracted from the optical path as shown by the broken line in FIG. 2 and irradiates the condensing optical system 39 with the light beam from the HeNe laser 36. On the other hand, when the halogen lamp 37 is selected as the light source, the light source switching mirror 38 reflects the light beam from the halogen lamp 37 and irradiates the condensing optical system 39. The light source unit 30 is generally used together with the light source 10 of the exposure apparatus 1, but may be installed alone for the OA detection system. In this case, since the light source is a heating element, it is desirable to dispose the light source away from the OA detection system 21 that requires temperature stability. Further, when two types of light sources are used as in the present embodiment, the arrangement of the HeNe laser 36 and the halogen lamp 37 is not particularly limited.

  Next, the configuration of the OA detection system 21 will be described. The OA detection system 21 has an illumination system 32 that sends an illumination light beam IL to the wafer W. The illumination system 32 includes a light receiving optical system 40, an illumination aperture stop disk 41, a plane parallel plate 42, an illumination condenser lens 43, an illumination field stop 44, and an illumination relay lens 45. The illumination aperture stop disk 41 has a plurality of types of aperture stops that define the thickness (NA) of the illumination light beam IL, and can be switched by a rotation method (turret method) by driving a motor 46. The plane parallel plate 42 is an optical path shifting transparent member that adjusts the inclination with respect to the illumination light beam IL by driving the motor 47. The illumination condenser lens 43 is an optical element that condenses the illumination light beam IL that has passed through the plane parallel plate 42. The illumination field stop 44 is a field stop that defines the size of the image of the illumination light beam IL condensed by the illumination condenser lens 43. Further, the illumination relay lens 45 is an optical element that receives the illumination light beam IL that has passed through the illumination field stop 44 and irradiates the polarization beam splitter 48 described later.

  Here, the OA detection system 21 automatically adjusts the position of the illumination aperture stop with respect to an objective aperture stop 49 described later. Specifically, the user first sets the illumination condition (hereinafter referred to as “illumination mode”) regarding the combination of the light source type (HeNe laser 36 or halogen lamp 37) and the illumination aperture stop to the computer 35. Set. Thereafter, the main control system 33 instructs the rotation amount from the rotation origin to the motor 46 based on the illumination mode. Next, the main control system 33 drives the motor 46 based on the instructed rotation amount, sets one of a plurality of types of illumination aperture stops, and the illumination light beam IL that has passed through the set illumination aperture stop is: It passes through the plane parallel plate 42. Next, the main control system 33 instructs the rotation amount from the rotation origin to the motor 47 based on the illumination mode. Next, the main control system 33 drives the motor 47 based on the instructed rotation amount, and tilts the plane parallel plate 42 with respect to the optical axis of the illumination light beam IL, so that the illumination light beam IL is directed to the wafer 6. Shift in parallel. The rotation origins of the motors 46 and 47 are defined in advance by rotating the motors 46 and 47 as origin detection driving.

Further, the OA detection system 21 emits the illumination light beam IL to the alignment mark 50 formed on the wafer 6 and is generated by reflection (including those related to diffraction and scattering) from the alignment mark 50. It has an imaging system 51 that receives the imaging light beam ML. The imaging system 51 includes a polarizing beam splitter 48, a reflecting prism 52, a λ / 4 plate 53, an imaging aperture stop 49, an objective lens 54, a relay lens 55, a detection optical system 56, and image detection. An element 57 is provided. The polarization beam splitter 48 is a splitter that transmits only the P-polarized component (component parallel to the Z axis) of the illumination light beam IL and reflects the imaging light beam ML to irradiate a relay lens 55 described later. The polarization beam splitter 48 is for detecting detection light with high efficiency, and a normal half mirror may be used as long as the amount of light is sufficient. The reflecting prism 52 is a reflecting unit that reflects the illumination light beam IL and the imaging light beam ML. The λ / 4 plate 53 is a polarization conversion unit that converts the illumination light beam IL into circularly polarized light and converts the imaging light beam ML from circularly polarized light into linearly polarized light (S-polarized light in the X-axis direction). The imaging aperture stop 49 is an aperture stop that defines the thickness of the imaging light beam ML. The objective lens 54 is an optical element that condenses the illumination light beam IL to irradiate the alignment mark, which is the focal plane, with light, and collects an image from the focal plane to create the imaging light beam ML. The relay lens 55 is an optical element that forms an image of the imaging light beam ML once and irradiates the detection optical system 56 through a diaphragm. The detection optical system 56 is an optical system that forms an image of the imaging light beam ML again on the light receiving surface of the image detection element 57. Further, the image detection element 57 is a detection element that detects an alignment mark signal from the received imaging light beam ML and transmits it to the computer 35 via the main control system 33.

  FIG. 3 is a schematic diagram showing the configuration of a CCD camera 58 that houses the image detection element 57, FIG. 3A is a side view of the CCD camera 58, and FIG. 3B is a diagram of FIG. 2 is a plan view seen from the direction of the light receiving portion of the CCD camera 58 corresponding to FIG. The image detection element 57 of this embodiment is a two-dimensional CCD sensor that is a photoelectric conversion element. The light receiving portion 57a of the image detection element 57 has a rectangular shape, and the pixel resolution varies depending on the long side direction and the short side direction. The image detection element 57 is not limited to a CCD sensor, and may be a photodiode, for example. The CCD camera 58 includes an actuator 59 in which the image detection element 57 is installed, and a mount 58a for fixing the actuator 59. The actuator 59 is a rotation driving mechanism (conversion mechanism) that rotates the image detection element 57 and can change the position of the light receiving unit 57a in the long side direction and the short side direction.

  Next, the operation of the exposure apparatus 1 that performs baseline measurement during the alignment process for the wafer 6 will be described. FIG. 4 is a schematic diagram schematically showing the configuration of the exposure apparatus 1 that performs baseline measurement, FIG. 4 (a) is a plan view of the reticle stage 4, and FIG. 4 (b) is a diagram of FIG. It is a side view of the exposure apparatus 1 corresponding to (a). In FIG. 4, the same components as those in FIG. Here, a plurality of reticle reference marks 60 for positioning the reticle 3 and two reticle reference plates 61 are formed on the reticle stage 4, and a plurality of bases are provided on one reticle reference plate 61. A line measurement mark 62 is formed. A plurality of stage reference marks 63 are formed on the wafer stage 7. First, prior to baseline measurement, the exposure apparatus 1 performs positioning of the reticle 3 with respect to the reticle stage 4 by detecting a reticle reference mark 60 using a reticle alignment microscope (not shown). Next, as a first step of baseline measurement, the exposure apparatus 1 detects the relative position between the baseline measurement mark 62 and the stage reference mark 63 through the projection optical system 5 using the alignment microscope 64. After the completion of the first step, as a second step, the exposure apparatus 1 moves the wafer stage 7 to align the stage reference mark 63 with the observation area of the OA detection system 21. Thereafter, the exposure apparatus 1 detects the relative position between the stage reference mark 63 and the reference mark of the OA detection system 21. Finally, the exposure apparatus 1 calculates the baseline amount based on the detection results of the first process and the second process. By this baseline measurement, the exposure apparatus 1 can obtain the detection position of the OA detection system 21 with respect to the exposure drawing center, that is, the alignment process for the wafer 6 can be performed.

  Next, the operation of the exposure apparatus 1 that performs alignment processing on the wafer 6 will be described. In the alignment process, first, when the selected alignment mark is moved under the measurement area of the OA detection system 21, the stage control system 34 drives the wafer stage 7 to a designated position by a command from the computer 35. Next, the OA detection system 21 detects the alignment mark, and the computer 35 calculates the rotation amount of the wafer 6 based on the alignment mark signal detected by the OA detection system 21 and the position of the wafer stage 7. Based on the position result of the wafer 6, the stage control system 34 drives the wafer stage 7 to rotate and shift the wafer 6, or the OA detection system 21 performs at least one of magnification correction. Thus, the wafer 6 is aligned. FIG. 5 is a schematic diagram showing a measurement region 70 of the image detection element 57 with respect to two alignment marks 50 a and 50 b arranged at arbitrary positions on the wafer 6. In FIG. 5, a measurement region 71 of a conventional image detection element is also shown for comparison. Here, it is assumed that an exposure process is performed on one wafer by two types of exposure apparatuses, that is, an exposure apparatus A and an exposure apparatus B. At this time, if the amount of misalignment occurs at the printing position of the alignment mark 50b in FIG. 5 due to the rotational movement of the wafer 6 slightly rotating in the θ direction, the OA detection system provided in the conventional exposure apparatus has The alignment mark 50 b cannot be accommodated in the measurement region 71. In this case, in the conventional exposure apparatus, a process of searching for the alignment marks 50a and 50b is added, and as a result, the alignment time is delayed and the wafer processing efficiency is deteriorated. Therefore, it is not preferable in calculating a production plan using the exposure apparatus. Therefore, in the exposure apparatus 1 of the present embodiment, the actuator 59 installed in the CCD camera 58 is driven to rotate appropriately, and the direction position of the light receiving portion 57a of the image detection element 57 so that the alignment mark 50b is accommodated in the measurement region. To change.

  For example, in the OA detection system 21, first, the direction of the light receiving portion 57a of the image detection element 57, that is, the long side direction of the measurement region is the first from the rotation center of the wafer 6 toward the alignment marks 50a and 50b as in the prior art. It sets so that it may become a direction (the same direction as the measurement area | region 71 in FIG. 5). Next, the OA detection system 21 sequentially detects the two alignment marks 50a and 50b. Here, when the OA detection system 21 succeeds in detecting the alignment marks 50a and 50b, the detected alignment mark signal is transmitted to the computer 35, and the wafer 6 is detected based on the alignment mark signal. Perform alignment. On the other hand, when the two alignment marks 50a and 50b rotate and move out of at least one alignment mark measurement region and the OA detection system 21 fails to detect, the OA detection system 21 sends the result to the computer. 35. Next, the computer 35 instructs the main control system 33 to rotate the actuator 59 by 90 degrees so that the long side direction of the measurement region is oriented in the second direction, which is a direction orthogonal to the first direction. Then, the direction of the light receiving portion 57a is changed. That is, in this case, as shown in the measurement region 70 of FIG. 5, the measurement region has a side parallel to the first direction as a short side and a side parallel to the second direction as a long side. Thereby, since the measurement area is substantially expanded, the OA detection system 21 can accommodate the two alignment marks 50a and 50b in the measurement area, and can sequentially detect them.

  As described above, according to the exposure apparatus of the present invention, the OA detection system 21 can appropriately set the measurement area of the image detection element 57 in the direction of widening based on the amount of deviation of the alignment marks 50a and 50b. It is. Therefore, even when a rotation error occurs with respect to the reference position of the alignment marks 50a and 50b, the OA detection system 21 expands the measurement area in the direction in which the error occurs and detects the alignment marks 50a and 50b with high accuracy. be able to. As a result, in the exposure apparatus 1, the alignment mark detection rate is improved and the throughput is improved.

(Device manufacturing method)
Next, a method for manufacturing a device (semiconductor device, liquid crystal display device, etc.) according to an embodiment of the present invention will be described. A semiconductor device is manufactured through a pre-process for producing an integrated circuit on a wafer and a post-process for completing an integrated circuit chip on the wafer produced in the pre-process as a product. The pre-process includes a step of exposing a wafer coated with a photosensitive agent using the above-described exposure apparatus, and a step of developing the wafer. The post-process includes an assembly process (dicing and bonding) and a packaging process (encapsulation). A liquid crystal display device is manufactured through a process of forming a transparent electrode. The step of forming the transparent electrode includes a step of applying a photosensitive agent to a glass substrate on which a transparent conductive film is deposited, a step of exposing the glass substrate on which the photosensitive agent is applied using the above-described exposure apparatus, and a glass substrate. The process of developing is included. According to the device manufacturing method of the present embodiment, it is possible to manufacture a higher quality device than before.

(Other embodiments)
As mentioned above, although preferable embodiment of this invention was described, this invention is not limited to these embodiment, A various deformation | transformation and change are possible within the range of the summary.

  In the above-described embodiment, in the OA detection system 21, the rotationally driven actuator 59 is installed as means for changing the direction position of the light receiving portion 57 a of the image detection element 57 so that the alignment mark is appropriately accommodated in the measurement region. did. However, the present invention is not limited to this, and as a mechanism for changing the direction position of the light receiving unit 57a, for example, a rotating mechanism that allows the CCD camera 58 to be manually rotated may be used. When this rotation mechanism is employed, when the OA detection system 21 fails to detect at least one of the two alignment marks 50a and 50b, the OA detection system 21 first sends the result to the computer. 35. Next, the computer 35 notifies the user, for example, by displaying the result on the display screen. Then, the user may set it while appropriately adjusting the rotation angle of the CCD camera 58 based on the result. In the present invention, when the image detecting element 57 having the rectangular light receiving portion 57a is adopted, the long side direction and the short side direction having different pixel resolutions are set to positions most suitable for detecting the alignment mark. It is. Therefore, for example, if the same exposure apparatus is used and the lots are for the same measurement object, the rotation error of the measurement object is determined by the first detection by the OA detection system 21, and the light receiving unit 57a The installation angle may be fixed at all times.

  In the above embodiment, the OA detection system 21 that performs alignment of the wafer 6 has been described. However, the present invention can also be applied to an OA detection system that performs alignment of the reticle 3 using the reticle 3 as a measurement object. is there. In this case as well, when two alignment marks formed on the reticle 3 are measured, the measurement area may be set so as to extend in the direction in which the rotation error of the reticle 3 occurs.

  The arrangement of the alignment mark 50 is set at an arbitrary position on the reticle 3 and the wafer 6 such as an arrangement rotated by 45 degrees or an arrangement rotated by 90 degrees. Therefore, in the present invention, the direction in which the measurement region of the image detection element 57 is expanded is not limited to the first direction toward the center position in the reticle 3 and the wafer 6 or the second direction that is orthogonal to the first direction. An arbitrary angle may be set. In this case, the computer 35 calculates the installation angle of the alignment mark 50 based on the position information of the alignment mark 50 detected by the OA detection system 21, and drives the actuator 59 to an arbitrary angle based on this angle information. Then, the measurement area may be set.

  In the above embodiment, the method of setting the measurement region by rotating the image detection element 57 by the actuator 59 has been described, but the present invention is not limited to this. For example, the OA detection system 21 itself or the optical system inside the OA detection system 21 (components of the illumination system 32 and the imaging system 51) may be rotated. In this case, for example, the measurement area, the number of photoelectric conversion elements, the element size, the setting of the magnification, the shape of the illumination field stop 44, and the like correspond to the arrangement of the alignment marks 50, and the detection rate with respect to the rotation direction error is increased. What is necessary is just to comprise so that it may improve.

  In the above embodiment, the OA detection system 21 employs the imaging system 51 fixed at a certain magnification, but the present invention is not limited to this. That is, the present invention can be applied to an OA detection system that employs an imaging system having two lines configured at two magnifications, low magnification observation and high magnification observation. In this case, two types of actuators that rotate the image detection element may be installed, one that drives the low-magnification image detection element and one that drives the high-magnification image detection element, or one of the images. An actuator may be installed only in the detection element. For example, when an actuator is installed only in the low magnification image detection element, first, alignment processing is performed with the low magnification image detection element. At this time, since the position correction and the rotation correction of the measurement object are not performed, the rotation error of the alignment mark 50 is in a large state. Therefore, in order to increase the detection rate of the alignment mark 50, the OA detection system performs measurement and correction by rotating only the low-magnification image detection element with an actuator in advance, and then the high-magnification image detection element. The alignment mark 50 may be measured as it is.

DESCRIPTION OF SYMBOLS 1 Exposure apparatus 3 Reticle 6 Wafer 21 OA detection system 30 Light source part 32 Illumination system 50 Alignment mark 51 Light reception system 57 Image detection element 59 Actuator 70 Measurement area IL Illumination light beam ML Imaging light beam

Claims (7)

A position detection system having an illumination system for introducing light from a light source and irradiating the alignment mark formed on the measurement object with light, and an imaging system for imaging light from the alignment mark, An exposure apparatus that performs at least one of rotation, shift, and magnification correction on the measurement object based on position information of the alignment mark detected by a position detection system,
The imaging system includes an image detection element that detects an alignment mark signal from the light,
The measurement area of the image detection element in the measurement object is a rectangle,
Exposure, characterized in that it comprises a mechanism for causing rotation of said image sensing element so as to face the long side direction of the measurement region in a second direction from the rotation center perpendicular to the first direction toward the alignment mark of the object to be measured apparatus. The exposure apparatus according to claim 1 , wherein the mechanism rotates the image detection element in response to the rotation of the alignment mark.   The exposure apparatus according to claim 1, wherein the image detection element is a photoelectric conversion element. Receiving portion of the image sensing element, said a rectangle corresponding to the long and short sides of the measurement region, according to claim 1 to 3, characterized in pixel resolution differs between the long side direction and a short side direction The exposure apparatus according to any one of the above. The object to be measured, the exposure apparatus according to any one of claims 1-4, characterized in that a substrate to be processed. The object to be measured, the exposure apparatus according to any one of claims 1-4, characterized in that the precursor circuit pattern to be transferred to the target substrate is formed. The process of exposing a board | substrate using the exposure apparatus of any one of Claims 1-6 ,
Developing the substrate;
A device manufacturing method characterized by comprising:

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