JP5688231B2 - Gas processing equipment - Google Patents

Description

  The present invention relates to a gas processing apparatus that purifies harmful gas contained in a gas to be processed.

  2. Description of the Related Art Conventionally, a technique for purifying harmful gas contained in exhaust gas by creating a plasma state by performing high voltage discharge in the exhaust gas is known. In recent years, this technology is being applied to a purification device for purifying factory exhaust and an air purifier for purifying indoor air for the purpose of deodorization.

  Plasma that is in a thermally non-equilibrium state, that is, in which the electron temperature is much higher than the temperature of the gas or ion (non-equilibrium plasma (hereinafter simply referred to as plasma)) is the ion or radical produced by electron collision. Promotes a chemical reaction that does not occur at room temperature, and is considered useful in hazardous gas treatment as a medium that can efficiently remove or decompose harmful gases. The key to practical use is to improve the energy efficiency during processing and to convert it into a completely safe product after processing with plasma.

In general, plasma at atmospheric pressure is generated by gas discharge or electron beam. There are nitrogen oxides (NOx), sulfur oxides (SOx), chlorofluorocarbons, CO ₂ , volatile organic solvents (VOC), etc. that are currently being considered for application. Above all, NOx is contained in the exhaust gas of a car, so that it needs to be put into practical use immediately.

The phenomenon in discharge plasma (plasma generated by gas discharge) in NOx removal is that ions and radicals generated primarily by electron collision cause an initial reaction, and N ₂ , H ₂ O, It is thought that it is converted into each particle such as NH ₄ NO ₃ .

Further, when the harmful gas is, for example, acetaldehyde or formaldehyde, the harmful gas is converted into CO ₂ and H ₂ O by passing plasma. In this case, ozone (O ₃ ) is generated as a by-product.

  FIG. 5 illustrates a main part of a conventional gas processing apparatus using discharge plasma (see, for example, Patent Document 1). In the figure, reference numeral 1 denotes a duct (ventilation path) through which a processing target gas (air containing toxic gas) GS flows. Inside the duct 1, a discharge electrode 2 and a ground electrode 3 are arranged along the direction in which the processing target gas GS passes. Are disposed alternately, and a honeycomb structure 4 having a large number of through-holes 4a called cells is disposed between the electrodes 2 and 3. Reference numeral 5 denotes a high voltage power source. The honeycomb structure 4 is formed of an insulator such as ceramics, and Patent Document 2 also has an example of its use.

  The discharge electrode 2 is formed of a metal mesh, a fine wire, a needle-like body, or the like. Each discharge electrode 2 is connected to the + pole of the high voltage power supply 5 by a conducting wire 6. The ground electrode 3 is formed of a metallic mesh or the like. Each ground electrode 3 is connected to the negative pole of the high voltage power supply 5 by a conducting wire 7.

  In this gas processing apparatus, the gas GS to be processed is caused to flow through the duct 1, and a high voltage (several kV to several tens kV) from the high voltage power supply 5 is applied between the discharge electrode 2 and the ground electrode 3. Thereby, plasma is generated in the through-holes 4a of the honeycomb structures 4, and harmful gases contained in the processing target gas GS are decomposed into harmless substances by ions and radicals generated in the plasma.

However, the gas processing apparatus having such a configuration has the following problems.
(1) Although a large number of honeycomb structures 4 are provided, a technique for generating uniform plasma without variations has not been established, and variations in the performance of the honeycomb structures 4 occur. For example, impedance values may be different even in the same honeycomb structure 4, and impedance values may be different in one honeycomb structure 4, for example, at the top and bottom thereof, so that uniform plasma can be generated as a whole. Therefore, the gas processing capacity becomes unstable. Further, since plasma is generated only through the through holes 4a, the amount of plasma generated is small and the gas processing capacity is low.

  (2) The honeycomb structure 4 has a characteristic of low impedance when moisture is absorbed and high impedance when dried. When the honeycomb structure 4 becomes low impedance, the flowing current increases and the discharge electrode 2 and the ground electrode 3 When the high voltage value applied between them decreases and the honeycomb structure 4 becomes high impedance, the flowing current decreases and the high voltage value applied between the discharge electrode 2 and the ground electrode 3 increases. The high voltage power supply 5 that can obtain a high voltage value that can secure a desired plasma generation amount with respect to such a change in the high voltage value is very expensive including the man-hours required for its design.

(3) Since the discharge electrode 2 and the ground electrode 3 are provided for each of the honeycomb structures 4, the number of parts is large, the structure is complicated, and the cost is high.
(4) Since the honeycomb structure 4 is disposed in the duct 1 along the passing direction of the gas GS to be treated (direction from the inlet to the outlet of the duct 1), the direction orthogonal to the gas flow of the honeycomb structure 4 The dimension of is longer and the dimension parallel to the gas flow is shorter. For this reason, when the flow rate of the gas flow is high, the time during which the gas GS to be processed is exposed to the plasma inside the honeycomb structure 4 is short, and the gas processing capacity is reduced.

  Therefore, the present applicant has proposed a gas processing apparatus having a structure as shown in FIG. 6 as a solution to the problems of the conventional gas processing apparatus described above (see Patent Document 3). In this gas processing apparatus, intervals G (G1 to G3) are provided along a direction orthogonal to the passing direction of the processing target gas GS from the inlet to the outlet of the duct 1, and a large number of through holes (round holes) 4a are formed. A plurality of honeycomb structures 4 (4-1 to 4-4) are arranged.

  Reference numeral 8 denotes a first electrode disposed outside the honeycomb structure 4-1 located at one end in a direction orthogonal to the passing direction of the processing target gas GS among the honeycomb structures 4-1 to 4-4. Reference numeral 9 denotes a second electrode disposed outside the honeycomb structure 4-4 located at the other end of the honeycomb structures 4-1 to 4-4 in the direction orthogonal to the passing direction of the processing target gas GS. The metal mesh is used so that the processing target gas GS passes through.

  By applying a high voltage from a high voltage power source (high voltage source) 5 between the first electrode 8 and the second electrode 9, a gap between the through holes 4a of the honeycomb structure 4 and the honeycomb structure 4 is obtained. Plasma is generated in the space 10 (10-1 to 10-3), and harmful gases contained in the processing target gas GS are decomposed into harmless substances by ions and radicals generated in the plasma.

JP 2000-140562 A JP 2001-276561 A JP 2008-194669 A

  However, the gas processing apparatus having the structure shown in FIG. 6 is excellent in that it can solve the problems of the conventional gas processing apparatus described above, but has the following new problems. .

  In this gas processing apparatus, the processing target gas GS is generated in the through holes 4a of the honeycomb structure 4 and the spaces 10 between the honeycomb structures 4 in the process of flowing in the direction of passage from the inlet to the outlet of the duct 1. However, since the moisture contained in the processing target gas GS is consumed every time the processing is performed, the humidity of the processing target gas GS decreases from the upstream side to the downstream side. Further, the plasma generation state inside the honeycomb structure 4 is more active as the moisture in the gas GS to be processed increases, and has a characteristic of being suppressed as the moisture decreases.

On the other hand, the gap G between the honeycomb structures 4 forming the space 10 is made equal from the upstream side to the downstream side in the passage direction of the processing target gas GS. That is, the electrode impedance of the space 10 between the honeycomb structures 4 is made equal from the upstream side to the downstream side in the passage direction of the processing target gas GS. Further, as described above, since the honeycomb structure 4 has a characteristic of low impedance when moisture is absorbed and high impedance when dried, the electrode impedance of the honeycomb structure 4 is small on the upstream side with much moisture, and the moisture content is small. On the downstream side, the electrode impedance of the honeycomb structure 4 increases. For this reason, if the interval G is determined with an appropriate plasma generation state on the upstream side, the discharge current on the upstream side is appropriate, but the discharge current on the downstream side becomes small, and the plasma on the downstream side becomes small. There arises a problem that the occurrence state of becomes weak. Conversely, if the interval G is determined with an appropriate state of plasma generation on the downstream side, the discharge current on the downstream side is appropriate, but the discharge current on the upstream side becomes large, and the plasma on the upstream side becomes large. There arises a problem that the occurrence state of becomes strong.

  The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a gas processing apparatus capable of balancing the generation state of the plasma on the upstream side and the downstream side with a simple configuration. Is to provide.

  In order to achieve such an object, the present invention provides a large number of penetrations through which the processing target gas passes and is arranged along a direction orthogonal to the passing direction of the processing target gas from the inlet to the outlet of the ventilation path. A plurality of honeycomb structures having holes, a first electrode disposed on the outer side of the honeycomb structure disposed at one end of the plurality of honeycomb structures in a direction orthogonal to the passing direction of the gas to be treated; A second electrode disposed outside the honeycomb structure disposed at the other end of the honeycomb structure in a direction orthogonal to the passage direction of the gas to be processed, and the first electrode and the second electrode Each honeycomb structure forming a space between honeycomb structures in a gas processing apparatus having a high voltage source for generating a plasma in a through hole of the honeycomb structure and a space between the honeycomb structures by applying a high voltage therebetween Among Septum is obtained as narrowed toward the downstream side from the upstream side of the passage direction of the untreated gas.

  Further, a plurality of honeycomb structures having a plurality of through-holes arranged at intervals along a direction orthogonal to the direction of passage of the processing target gas from the inlet to the outlet of the ventilation passage and having a plurality of through holes through which the processing target gas passes, A plurality of adjacent honeycomb structures among the honeycomb structures are defined as one group of honeycomb structures, and the first and second honeycomb structures are arranged outside the honeycomb structures positioned at both ends of each honeycomb structure group. High voltage source for generating plasma in the through holes of the honeycomb structure and the space between the honeycomb structures by individually applying a high voltage between the electrode and the first electrode and the second electrode of each honeycomb structure group In the gas processing apparatus having the above, the interval between the honeycomb structures forming the space between the honeycomb structures is narrowed from the upstream side to the downstream side in the passage direction of the gas to be processed.

In the present invention, the interval between the honeycomb structures forming the space between the honeycomb structures is narrowed from the upstream side to the downstream side in the direction in which the gas to be processed passes, but the honeycomb structures are arranged obliquely, The distance between the structures is reduced by increasing the thickness of the structure from the upstream side to the downstream side in the direction of passage of the gas to be processed. Thereby, in this invention, the electrode impedance of the space between honeycomb structures becomes small toward the downstream from the upstream of the passage direction of process object gas.

According to the present invention, the interval between the honeycomb structures forming the space between the honeycomb structures is narrowed from the upstream side to the downstream side in the direction in which the gas to be processed passes . The interval is wide on the upstream side where the plasma generation conditions are good, that is, on the upstream side where there is a lot of moisture and the electrode impedance of the honeycomb structure becomes small (the electrode impedance in the space between the honeycomb structures becomes large), and the plasma generation conditions are poor On the downstream side, that is, on the downstream side where the electrode impedance of the honeycomb structure increases with less moisture (the electrode impedance in the space between the honeycomb structures decreases), the impedance between the electrodes becomes uniform (the discharge current becomes uniform). It is possible to balance the generation state of the plasma on the upstream side and the downstream side with a simple configuration.

It is a figure which shows the principal part of one Embodiment (Embodiment 1) of the gas processing apparatus which concerns on this invention. An example in which the shape in the thickness direction of a part of the honeycomb structures is changed in Embodiment 1 so that the interval between the honeycomb structures is gradually narrowed from the upstream side to the downstream side in the passage direction of the processing target gas. FIG. In the first embodiment, an example is shown in which the shape in the thickness direction of all the honeycomb structures is changed so that the interval between the honeycomb structures is gradually narrowed from the upstream side to the downstream side in the passage direction of the gas to be processed. FIG. It is a figure which shows the principal part of other embodiment (Embodiment 2) of the gas processing apparatus which concerns on this invention. It is a figure which illustrates the principal part of the conventional gas processing apparatus using discharge plasma. It is a figure which shows the principal part of the gas processing apparatus shown by patent document 3. FIG.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

[Embodiment 1]
FIG. 1 is a diagram showing a main part of an embodiment (Embodiment 1) of a gas processing apparatus according to the present invention. In FIG. 6, the same reference numerals as those in FIG. 6 denote the same or equivalent components as those described with reference to FIG.

  Also in this embodiment, a plurality of honeycomb structures are formed along the direction orthogonal to the passing direction of the gas to be processed GS (the direction from the inlet to the outlet of the duct 1) as in the gas processing apparatus shown in FIG. The body 4 is arranged in the duct 1 with a gap.

  In this example, a gap G1 is provided between the honeycomb structures 4-1 and 4-2, and a gap G2 is provided between the honeycomb structures 4-3 and 4-4. ˜4-4 are arranged in the duct 1.

  In addition, adjacent honeycomb structures 4-1 and 4-2 among the plurality of honeycomb structures 4 in the duct 1 serve as a first honeycomb structure group, and honeycombs positioned at both ends of the first honeycomb structure group. Outside the structures 4-1 and 4-2, an electrode 8 is arranged as a first electrode, and an electrode 9 is arranged as a second electrode.

  Similarly, adjacent honeycomb structures 4-3 and 4-4 among the plurality of honeycomb structures 4 in the duct 1 are set as the second honeycomb structure group, and are positioned at both ends of the second honeycomb structure group. Outside the honeycomb structures 4-3 and 4-4, the electrode 9 as the first electrode and the electrode 11 as the second electrode are arranged.

  In the present embodiment, the electrode 9 is a common electrode that serves as both the second electrode of the first honeycomb structure group and the first electrode of the second honeycomb structure group. The second electrode of the honeycomb structure group and the first electrode of the second honeycomb structure group may be independent electrodes.

  The electrodes 8, 9 and 11 are made of metal mesh so that the processing target gas GS passes through. However, the electrodes 8 and 11 have constant cross-sections and rectangular electrodes, and the electrode 9 has a thickness increased from the upstream side to the downstream side in the direction of passage of the processing target gas GS. The cross section is a wedge-shaped electrode.

  In the present embodiment, the high voltage power source (high voltage source) 5 is provided between the electrodes 8 and 9 of the first honeycomb structure group and between the electrodes 9 and 11 of the second honeycomb structure group. The electrodes 8 and 11 are connected to the negative pole of the high voltage power supply 5 by the conductive wire 12, and the electrode 9 is connected to the positive pole of the high voltage power supply 5 by the conductive wire 13. ing.

  The honeycomb structure 4 is formed of an insulator such as ceramics, and has a large number of through holes (cells) 4a through which the processing target gas GS passes. The number of through holes 4a per unit area of each honeycomb structure 4 is made equal. Further, all the honeycomb structures 4 have a constant length (thickness) in a direction orthogonal to the passing direction of the processing target gas GS in the entire region along the passing direction of the processing target gas GS. That is, in the present embodiment, the same kind of honeycomb structures 4-1 to 4-4 are used in which the number of through holes 4a per unit area is equal and the thickness is constant and equal.

  In this embodiment, the gap G1 between the honeycomb structures 4-1 and 4-2 is set so that the honeycomb structure 4-1 is parallel to the passage direction of the processing target gas GS and the honeycomb structure 4 -2 is inclined so as to follow the inclination of the upper surface of the electrode 9, and is gradually narrowed from the upstream side to the downstream side in the passing direction of the processing target gas GS.

  In this embodiment, the gap G2 between the honeycomb structures 4-3 and 4-4 is set so that the honeycomb structure 4-4 is parallel to the passage direction of the processing target gas GS and the honeycomb structure 4 -3 is arranged so as to follow the inclination of the lower surface of the electrode 9, and is gradually narrowed from the upstream side to the downstream side in the passing direction of the processing target gas GS.

  In this gas processing apparatus, the gas GS to be processed is caused to flow into the duct 1, and a high voltage from the high voltage power supply 5 is applied between the electrodes 8 and 9 and between the electrodes 9 and 11. As a result, plasma is generated in the through holes 4a of the honeycomb structure 4 and the space 10 (10-1, 10-2) between the honeycomb structures 4, and the gas to be processed is generated by the ions and radicals generated in the plasma. The harmful gas contained in GS is decomposed into harmless substances.

  In the present embodiment, plasma is generated not only in the through holes 4 a of the honeycomb structure 4 but also in the space 10 between the honeycomb structures 4. For this reason, in addition to the molecular decomposition effect of the harmful gas in the through hole 4a, the molecular decomposition effect of the harmful gas in the space 10 between the honeycomb structures 4 is added, and further, the molecular decomposition effect in the through hole 4a and the honeycomb Due to the synergistic effect with the molecular decomposition effect in the space 10 between the structures 4, decomposition of harmful gases into harmless substances is promoted, and gas processing capacity is increased. Further, in the space 10 between the honeycomb structures 4, an electric field spreads from the edge surface of the opposing through-hole 4a, and a large amount of uniform plasma is generated.

  In this embodiment, since the honeycomb structures 4 are arranged at intervals along the direction orthogonal to the passing direction of the processing target gas GS, they are arranged along the passing direction of the processing target gas GS. Compared to the case, the time during which the processing target gas GS is exposed to plasma in the through holes 4a of the honeycomb structures 4 and the spaces 10 between the honeycomb structures 4 becomes longer. As a result, the opportunity for gas decomposition is increased, the gas processing capacity is improved, and it is possible to prevent the gas processing capacity from being lowered in a high-speed flow.

  In this embodiment, a high voltage from the high-voltage power source 5 is individually applied between the electrodes 8 and 9 of the first honeycomb structure group and between the electrodes 9 and 11 of the second honeycomb structure group. Therefore, the potentials in the spaces 10-1 and 10-2 can be stably maintained in a high electric field state, and plasma can be stably generated.

Furthermore, in this embodiment, the interval G (G1, G2) between the honeycomb structures 4 forming the space 10 (10-1, 10-2) is from the upstream side to the downstream side in the passage direction of the processing target gas GS. It is gradually narrowed towards. That is, the electrode impedance of the space 10 between the honeycomb structures 4 decreases from the upstream side to the downstream side in the passing direction of the processing target gas GS. As a result, the gap G between the honeycomb structures 4 becomes wider on the upstream side where the plasma generation conditions are good, that is, on the upstream side where there is a lot of moisture and the electrode impedance of the honeycomb structure 4 is small (in the space 10 between the honeycomb structures 4). The electrode impedance increases, and the downstream side where the plasma generation conditions are poor, that is, the downstream side where the electrode impedance of the honeycomb structure 4 increases and the electrode impedance of the honeycomb structure 4 increases becomes narrower (the electrode impedance of the space 10 between the honeycomb structures 4 decreases). The impedance between the electrodes is made uniform (the discharge current is made uniform), the plasma generation state on the upstream side and the downstream side is balanced, and the gas processing capacity is stabilized.

  In this example, the honeycomb structures 4-1 to 4-4 are the same type and the same type of honeycomb structures, but as shown in FIG. 2, the honeycomb structures 4-2 and 4- 3, the gap G (G1, G2) between the honeycomb structures 4 may be gradually narrowed from the upstream side to the downstream side in the passing direction of the processing target gas GS.

  In the example shown in FIG. 2, the electrode 9 is an electrode having a rectangular cross section with a constant thickness, and the thickness of the honeycomb structures 4-2 and 4-3 is set upstream in the passage direction of the processing target gas GS. The inclined surface of the honeycomb structure 4-3 is made thicker from the side toward the downstream side, and the inclined surface 4-2s of the honeycomb structure 4-2 formed thereby is directed toward the honeycomb structure 4-1 side. The honeycomb structures 4-2 and 4-3 are arranged on the upper and lower surfaces of the electrode 9 with 4-3s facing the honeycomb structure 4-4.

  In this way, the bottom surfaces (non-inclined surfaces) of the honeycomb structures 4-2 and 4-3 and the passage direction of the processing target gas GS are parallel to each other, so that the honeycomb structures 4-2 and 4-3 are positioned. It can be done easily. Further, a simple rectangular parallelepiped shape can be used as the electrode 9.

  As shown in FIG. 3, the honeycomb structures 4-1 and 4-4 may also have shapes having inclined surfaces 4-1s and 4-4s. In this way, all of the honeycomb structures 4-1 to 4-4 can be made the same type of honeycomb structure having the inclined surface 4s, and the generation of two types of honeycomb structures can be avoided.

[Embodiment 2]
In Embodiment 1, the adjacent honeycomb structures 4-1 and 4-2 among the plurality of honeycomb structures 4 arranged at intervals along the direction orthogonal to the passing direction of the processing target gas GS One honeycomb structure group, and the adjacent honeycomb structures 4-3 and 4-4 as second honeycomb structure groups, so that a high voltage is individually applied to the first and second honeycomb structure groups. However, as shown in FIG. 4, only one group of honeycomb structures may be arranged in the duct 1.

In the example shown in FIG. 4, the honeycomb structures 4-1, 4-2, 4-3 are arranged at intervals along a direction orthogonal to the passage direction of the processing target gas GS, and the honeycomb structure 4- By providing the inclined surfaces 4-2s ₁ and 4-2s ₂ on the upper surface and the lower surface of ₂ , the gap G (G1, G2) between the honeycomb structures 4 is changed from the upstream side to the downstream side in the passing direction of the processing target gas GS. I try to narrow it gradually. Further, the electrode 8 is disposed outside the honeycomb structure 4-1, the electrode 11 is disposed outside the honeycomb structure 4-3, and a high voltage from the high voltage power source 5 is applied between the electrodes 8 and 11. It is trying to apply.

  As described above, in any of the first and second embodiments, it is possible to balance the plasma generation state on the upstream side and the downstream side with a simple configuration without separately adding a circuit or a member.

  In the first and second embodiments described above, the honeycomb structure 4 may have a catalyst function for decomposing ozone, and a catalyst for decomposing ozone may be provided at a downstream position in the passing direction of the processing target gas GS. It may be.

  In Embodiment 1 described above, the number of honeycomb structures 4 in one honeycomb structure group is two, but the number may be further increased. Further, the number of honeycomb structure groups is not limited to two, and the number may be further increased. The same applies to the second embodiment, and the number of honeycomb structures may be two or may be increased.

  In Embodiment 1 described above, a high voltage from a single high-voltage power supply 5 is individually applied to the first honeycomb structure group and the second honeycomb structure group. You may make it apply the high voltage from a voltage power supply separately. For example, by changing the value of the applied high voltage, changing the type of applied high voltage (AC, DC, etc.), or changing the frequency of the applied high voltage, the first honeycomb structure group and the first It is possible to change the kind of decomposable harmful gas by changing the amount of plasma generated in the two honeycomb structure groups.

  Further, in the first and second embodiments described above, a large amount of ozone may be generated as a by-product and used as an ozone generator.

The gas processing apparatus of the present invention can also be applied to so-called reforming for generating a hydrogen-containing gas from hydrocarbons or the like for the purpose of efficiently generating hydrogen used in a fuel cell or the like. For example, in the case of octane (substance relatively close to the average molecular weight of gasoline) C ₈ H ₁₈ , when supplied to this gas treatment device, the chemical reaction represented by the following formula (1) is promoted, and as a result, hydrogen gas is efficiently generated. can do.
C ₈ H ₁₈ + 8H ₂ O + 4 (O ₂ + 4N ₂ ) → 8CO ₂ + 17H ₂ + 16N ₂ ... (1)

1 ... duct (air passage), 4 (4-1 to 4-4) ... honeycomb structure, 4a ... through holes _{(cells), 4s (4-1s~4-4s, 4-2s 1} , 4-2s 2 ) ... inclined surface, 5 ... high voltage power supply, 8, 9, 11 ... electrode, 10 (10-1, 10-2) ... space, 12, 13 ... conducting wire, G (G1, G2) ... interval, GS ... treatment Target gas.

Claims (4)

A plurality of honeycomb structures having a large number of through holes arranged at intervals along a direction orthogonal to the passage direction of the processing target gas from the inlet to the outlet of the ventilation path, and through which the processing target gas passes;
A first electrode disposed on the outer side of the honeycomb structure disposed at one end of the plurality of honeycomb structures in a direction perpendicular to the direction of passage of the gas to be treated;
A second electrode disposed on the outside of the honeycomb structure disposed at the other end of the plurality of honeycomb structures in a direction perpendicular to the direction of passage of the gas to be treated;
A gas processing apparatus comprising: a high voltage source that applies a high voltage between the first electrode and the second electrode to generate plasma in a through hole of the honeycomb structure and a space between the honeycomb structures In
A gas processing apparatus, wherein an interval between each honeycomb structure forming a space between the honeycomb structures is narrowed from the upstream side to the downstream side in the passage direction of the gas to be processed. A plurality of honeycomb structures having a large number of through holes arranged at intervals along a direction orthogonal to the passage direction of the processing target gas from the inlet to the outlet of the ventilation path, and through which the processing target gas passes;
A plurality of adjacent honeycomb structures among the plurality of honeycomb structures are regarded as a group of honeycomb structures, and each of the honeycomb structures is disposed outside the honeycomb structures positioned at both ends thereof. Two electrodes;
A high voltage source for generating a plasma in a through hole of the honeycomb structure and a space between the honeycomb structures by individually applying a high voltage between the first electrode and the second electrode of each honeycomb structure group In a gas processing apparatus comprising:
A gas processing apparatus, wherein an interval between each honeycomb structure forming a space between the honeycomb structures is narrowed from the upstream side to the downstream side in the passage direction of the gas to be processed. In the gas treatment device according to claim 1 or 2,
In all the honeycomb structures, when the direction orthogonal to the passage direction of the processing target gas is the thickness direction of the honeycomb structure, the thickness is constant in the entire region along the passage direction of the processing target gas. A gas treatment device characterized by that. In the gas treatment device according to claim 1 or 2,
At least a part of the honeycomb structure has a thickness that is downstream from the upstream side in the passage direction of the processing target gas when the direction orthogonal to the passage direction of the processing target gas is the thickness direction of the honeycomb structure. A gas processing apparatus characterized by being thickened toward the side.

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