JP5683125B2 - Electrode laying method and structure - Google Patents

Description

  The present invention relates to an electrode laying method and its structure, and more particularly to an electrode laying method and its structure provided on a substrate.

  Conventionally, in a capacitive touch panel manufacturing process, two different axial electrodes are formed on a substrate.

  An insulating layer is formed on one of the axial electrodes, and the other axial electrode is used for electrical connection through a metal wire provided on the insulating layer.

  However, the metal conductor provided on the conventional insulating layer cannot be connected because the metal conductor is damaged in a post-manufacturing process. Therefore, the non-defective rate of manufacturing the capacitive touch panel is reduced.

  Further, in the production of an optical mask in a general factory, since the width of the pattern line of the optical mask to be produced is the same as the width of the pattern line necessary for molding, the above-described problem cannot be improved.

  Furthermore, the situation that the photoresist remains after development, the development is incomplete, and the development is excessive occurs simultaneously.

  In addition, after etching, an appearance defect (a sawtooth or wavy shape is formed at the edge of the circuit) or an electrical defect (an abnormality is recognized in a precision test) easily occurs.

  The present invention relates to an electrode laying method and structure for destroying a conductor provided on a groove of a bridge in a manufacturing process, and providing and connecting a power conductor at a position lower than the bridge groove at the height of the bridge insulation unit. The issue is to provide.

Therefore, as a result of intensive studies in view of the drawbacks found in the prior art, the present inventor has obtained a substrate, a transparent conductive layer formed on the substrate, a polyimide layer formed on the substrate, Comprising a conductive layer formed on a substrate and a protective layer formed on the substrate;
The transparent conductive layer is provided with a plurality of adjacent patterns,
The polyimide layer is provided with an insulating unit having a plurality of grooves, and is used for connecting so as to straddle between patterns;
The conductive layer includes a plurality of conductive wires provided corresponding to the grooves, and the conductive wires of the conductive layer are formed with at least one or more overexposure or excessive development with an optical security type optical mask. And
Based on this knowledge, the protective layer increases the light transmittance, and can solve the problem by the substrate, the transparent conductive layer, the polyimide layer, and the electrode laying method and the structure for protecting the conductive layer. The present invention has been completed.

The present invention will be specifically described below.
The electrode laying method according to claim 1, comprising: a substrate; a transparent conductive layer formed on the substrate; a polyimide layer formed on the substrate; a conductive layer formed on the substrate; A protective layer formed on the substrate,
The transparent conductive layer is provided with a plurality of adjacent patterns,
The polyimide layer is provided with an insulating unit having a plurality of grooves, and is used for connecting so as to straddle between patterns;
The conductive layer includes a plurality of conductive wires provided corresponding to the grooves, and the conductive wires of the conductive layer are formed with at least one or more overexposure or excessive development with an optical security type optical mask. And
The protective layer increases the light transmittance and serves to protect the substrate, the transparent conductive layer, the polyimide layer, and the conductive layer.

The electrode laying method according to claim 2 comprises the following steps in forming the transparent conductive layer according to claim 1,
Forming a conductive film on the substrate,
Apply photoresist on the substrate,
Provide a photomask with the corresponding pattern, expose it on the photoresist through the photomask,
The pattern is developed, etched and stripped to form an adjacent pattern.

The electrode laying method according to claim 3, wherein the polyimide layer according to claim 2 applies a photoresist on a substrate,
Provide a light mask with a halftone pattern,
The light mask reflects on the photoresist using a halftone pattern, develops the halftone pattern on the photoresist, and serves to form grooves that connect across the blocks of the pattern;
It is formed from a step of baking a photoresist.

  According to a fourth aspect of the present invention, there is provided an electrode laying method in which the conductive layer in the third aspect is provided with a conductive material on a substrate, coated with a photoresist on the substrate, coated with an optical mask for optical compensation, The mask is overexposed on the photoresist corresponding to the line of the conductive line, and the conductive line pattern is developed to form a pattern block adjacent to each other, and the conductive line is generated by excessive development. Comprising the steps.

  In the electrode laying method according to claim 5, the protective layer according to claim 4 is formed by applying at least one photoresist and an organic substance on the substrate, and baking the photoresist or the organic substance to form a hard protective film. .

  The electrode laying method and the structure thereof according to claim 6, wherein the protective layer in claim 5 provides an optical mask having a protective area, and the protective area is exposed on a photoresist or an organic substance through the optical mask, Developed in a protective area on photoresist or organic matter.

  The electrode laying method and the structure thereof according to claim 7, wherein the halftone pattern of the optical mask according to claim 3 is such that the line width of the non-transparent area on the surface of the optical mask is the width of the line of the halftone pattern. It is formed more widely.

  According to an eighth aspect of the present invention, the halftone pattern of the optical mask according to the third aspect includes a step of forming a plurality of holes on the surface of the optical mask on average.

  The electrode laying method according to claim 9 is characterized in that the halftone pattern of the optical mask according to claim 3 is developed after the photoresist in the groove is developed by the interference and diffraction formed by the halftone pattern that is engaged during exposure. Is formed including a step of forming the insulating unit lower than the height of the insulating unit.

  The electrode laying method according to claim 10 and its structure are such that the conductive layer in claim 4 adjusts the light energy required for exposure, and there is an interaction between the light energy and the light mask by the optical mask for optical compensation. And generating and compensating for critical dimension loss of the conductive wire.

The structure of the electrode according to claim 11 comprises a substrate, a plurality of first electrode blocks, a plurality of second electrode blocks, and an insulating unit.
The first electrode block is provided on the substrate and electrically connected in series through the first conductor;
The second electrode block is provided on the substrate, and the second electrode block is provided on each side of the first conductor,
The insulation unit is provided vertically on the first conductor, and the insulation unit comprises a groove;
The second electrode block is electrically connected in series with an insulating unit having a second conductivity.

  According to a twelfth aspect of the present invention, the first electrode block, the second electrode block, the first conductive wire, and the second conductive wire according to the eleventh aspect are made of a transparent or non-transparent conductive material.

  In the structure of the electrode according to claim 13, the substrate according to claim 12 is a glass substrate.

  According to a fourteenth aspect of the present invention, the first conductive wire and the second conductive wire according to the eleventh aspect have a structure of molybdenum (MO) -aluminum (AL) -molybdenum (MO).

  The structure of the electrode according to claim 15 is the structure of the electrode according to claim 11, wherein at least one protective layer is provided on one side surface of the electrode.

  In the electrode structure according to claim 16, at least one protective layer according to claim 15 is provided on the other side surface of the electrode.

  According to a seventeenth aspect of the present invention, the protective layer according to the fifteenth or sixteenth aspect is formed of an organic substance or a photoresist.

  In the electrode structure according to claim 18, the photoresist according to claim 17 is made of silicon dioxide (SiO2).

The electrode structure according to claim 19 includes a substrate layer, a transparent conductive layer provided on at least one side of the substrate layer, and comprising a plurality of adjacent pattern blocks, the substrate layer, and the transparent conductive layer. A polyimide layer provided on one side surface and provided with a plurality of bridge-type grooves for laterally crossing the pattern block; and provided adjacent to one side surface of the polyimide layer; and A plurality of electrical conductors provided so as to correspond to the plurality of grooves are provided, and at least one of excessive exposure and excessive development is formed on the electrical conductors by an optically compensated optical mask. .

  The structure of the electrode according to claim 20 is such that the electrode according to claim 19 is provided with a protective layer on at least one side surface.

  In the structure of the electrode according to claim 21, the protective layer according to claim 20 is made of an organic material layer, a photoresist layer, an antireflection layer (AR), an antiglare layer (AG), or a combination of the above.

  The electrode laying method and structure thereof according to the present invention can electrically connect electrodes in two directions on the substrate at the same time, and have the effect of increasing the yield rate of the manufacturing process.

The present invention relates to an electrode laying method and structure for destroying a conductor provided on a groove of a bridge in a manufacturing process and providing a power conductor at a position lower than the bridge groove at the height of the insulation unit of the bridge. A substrate, a transparent conductive layer formed on the substrate, a polyimide layer formed on the substrate, a conductive layer formed on the substrate, and a protective layer formed on the substrate; Comprising
The transparent conductive layer is provided with a plurality of adjacent patterns,
The polyimide layer is provided with an insulating unit having a plurality of grooves, and is used for connecting so as to straddle between patterns;
The conductive layer includes a plurality of conductive wires provided corresponding to the grooves, and the conductive wires of the conductive layer are formed with at least one or more overexposure or excessive development with an optical security type optical mask. And
In order to increase the light transmission rate, the substrate, the transparent conductive layer, the polyimide layer, and a method for laying an electrode provided to protect the conductive layer, and the structure and features thereof will be described in detail. This will be described below with reference to the drawings.

  1 to 5 are explanatory views showing the steps of the electrode laying method according to the present invention.

  According to FIG. 1, the process of the electrode laying method provides a substrate in a first stage S1.

  In the second step S2, a transparent conductive layer is formed on the substrate, and the transparent conductive layer comprises a plurality of adjacent pattern blocks.

  In the third step S3, a polyimide layer is formed on the substrate, the polyimide layer is provided with an insulating unit in a plurality of grooves, and is used to cross-connect with the pattern block.

  In the fourth step S4, a conductive layer is formed on the substrate. The conductive layer includes a plurality of electrical conductors provided so as to correspond to the plurality of grooves.

  The electric conductor of the conductive layer is an optically compensated optical mask, and at least one of excessive exposure and excessive development is formed.

  In the fifth step S5, a protective layer is formed on the substrate and used to increase the transmittance, and the substrate, the transparent conductive layer, the polyimide layer, and the conductive layer are protected.

  FIG. 2 illustrates the second stage S2 described above.

  According to the drawing, the transparent conductive layer is formed by sputtering a transparent conductive film (Indium Tin Oxide, ITO) on the substrate in the second (one) step S2-1.

  In the second (second) step S2-2, a photoresist is applied on the substrate.

  In the second (three) step S2-3, an optical mask corresponding to the pattern block pattern is provided, and the pattern block is exposed through the optical mask to be formed on the photoresist.

  In the second (four) stage S2-4, the pattern blocks are developed, etched, and peeled to form adjacent pattern blocks.

  FIG. 3 illustrates the above-described third step S3.

  According to the drawing, the formation of the polyimide layer comprises the following steps.

  In the third (one) step S3-1, a photoresist is applied on the substrate.

  In the third (2) step S3-2, a halftone pattern light mask is provided, which is used to expose the halftone pattern on the photoresist.

  In the third (three) step S3-3, the halftone pattern is developed on the photoresist to form a groove extending horizontally between the pattern blocks.

  In the third (four) stage S3-4, a photoresist is baked.

  Also, in the process of forming the halftone pattern of the optical mask, is the line width of the non-transparent region formed on the surface of the optical mask wider than the line width of the halftone pattern (see FIG. 6a)? Alternatively, a plurality of holes (circular, rectangular, or an arbitrarily sized hole having an arbitrary shape, etc.) are formed and provided uniformly on the surface of the optical mask (see FIGS. 6b and 6c).

  At the time of exposure, the photoresist of the groove becomes lower than the height of the insulating unit after photolithography by the action of the light beam interfering and diffracting with respect to the halftone pattern (see FIG. 7d).

  FIG. 4 illustrates the fourth step S4 described above.

  According to the drawing, the process of forming the conductive layer includes the following.

  In the fourth (one) step S4-1, a conductive material is formed on the substrate.

  In the fourth (2) step S4-2, a photoresist is applied on the substrate.

  In the fourth (three) step S4-3, an optical compensation type optical mask is provided, and the conductive wire of the conductive line is excessively exposed on the substrate through the optical compensation type optical mask.

  In the fourth (fourth) step S4-4, the conductive wire pattern is developed to form an adjacent pattern block, and the conductive wire pattern is excessively exposed and excessively developed.

  Also, in the process of forming the conductive layer, the light energy used for exposure is adjusted, the optical compensation mask is combined, and the critical dimension loss of the conductive wire is caused by the interaction between the light energy and the optical compensation mask. It serves to compensate for (Critical Dimension Loss).

  For example, the pattern formed by the optical compensation type optical mask is a thick black conductive line pattern as disclosed in FIGS. 7a and 7b.

  FIG. 7a shows a state in which conductive wires having the same width are formed by the optical compensation type optical mask, and FIG. 7b shows a state in which the optical compensation type optical mask forms conductive wires having different widths. In particular, both ends of the conductive wire are formed relatively thick.

  FIG. 5 illustrates the fifth step S5.

  The formation of the protective layer includes the following steps. In the fifth (one) step S5-1, at least one of a photoresist and an organic material is applied on the substrate.

  In the fifth (2) step S5-2, a hard protective film is formed by baking a photoresist or an organic substance.

  In another embodiment of the present invention, when the protective layer is not provided on the entire area of the substrate, an optical mask having a protective area is provided after the fifth (one) step S5-1, and the protective area is provided through the optical mask. The pattern is exposed on the photoresist or organic matter, and is located in the pattern of the protective area on the photoresist or organic matter and developed.

  In the fifth (2) step S5-2, a hard protective film is formed by baking a photoresist or an organic substance.

  7c and 7d are explanatory views showing the structure of the electrode of the present invention.

  FIG. 7c is an electrode of a bridge used for a capacitive touch panel.

  The touch panel includes a substrate 10, a plurality of first electrode blocks 12, a plurality of second electrode blocks 14, and an insulating unit 16.

  The material of the substrate 10 is a glass material, that is, a glass substrate.

  The first electrode block 12 is provided on the substrate 10 and is electrically connected in series via the first conductor 18.

  The second electrode block 14 is provided on the substrate 10. Further, the second electrode blocks 14 are provided on both sides of the first conductor 18 respectively.

  The bridge insulation unit 16 is provided vertically on the first conductor 18 and comprises a groove 20 as disclosed in FIG. 7d.

  Among them, the second electrode block 14 is electrically connected in series through the insulating unit 16 by the second conducting wire 22.

  The first electrode block 12, the second electrode block 14, the first conductor 18 and the second conductor 22 are made of a transparent or non-transparent conductive material such as ITO (Indium tin oxide).

  The first conductor 18 and the second conductor 22 have a molybdenum (MO) -aluminum (AL) -molybdenum (MO) structure.

  Further, the electrode includes at least one protective layer and is not shown in the drawing, but is provided on the side surface of the bridge, the other side surface, or both sides.

  The protective layer is formed of an organic material or a photoresist. The material of the photoresist is silicon dioxide (SiO2).

  8a and 8b are explanatory views showing a state in which the electrodes of the bridge in the embodiment of the present invention are cut vertically.

  In the embodiment of the present invention, the electrode uses a capacitive touch panel, and includes a substrate layer SL, a transparent conductive layer ECL, a polyimide layer PI, and a conductive layer CL. The transparent conductive layer ECL is provided on at least one side surface of the substrate layer SL.

  The polyimide layer PI is provided on one side surface of the substrate layer SL and the transparent conductive layer ECL.

  The conductive layer CL is provided adjacent to one side surface of the polyimide layer PI, and the conductive layer CL has a structure of molybdenum (MO) -aluminum (AL) -molybdenum (MO).

  The bridge-type electrode is provided with a protective layer PL on at least one side, and the protective layer PL is an organic layer, a photoresist layer, an anti-reflection layer (AR), an anti-glare layer (AG). Or a combination of the above.

  The arrangement and manufacturing process of each layer can be changed according to demand.

  In the bridge-type electrode laying method and structure according to the present invention, the optical mask having the halftone pattern is formed in the groove of the insulating unit. Therefore, when the electrodes are connected, two directions are simultaneously formed on the substrate. In addition to being able to insulate and electrically connect the electrodes, the groove is lower than the height of the insulating unit, so the yield rate of the manufacturing process can be effectively increased. 2

  The above is a preferred embodiment of the present invention and does not limit the scope of the present invention. Therefore, any modifications or changes that can be made by those skilled in the art, which are made within the spirit of the present invention and have an equivalent effect on the present invention, belong to the scope of the patent registration claims of the present invention. And

It is the block diagram which showed the process of the laying method of an electrode. It is the block diagram which showed the process of the laying method of an electrode. It is the block diagram which showed the process of the laying method of an electrode. It is the block diagram which showed the process of the laying method of an electrode. It is the block diagram which showed the process of the laying method of an electrode. It is explanatory drawing which showed the pattern on an optical compensation type optical mask. It is explanatory drawing which showed the pattern on an optical compensation type optical mask. It is explanatory drawing which showed the pattern on an optical compensation type optical mask. It is a top view explaining the electrode structure of this invention. It is a top view explaining the electrode structure of this invention. It is a top view explaining the electrode structure of this invention. It is a top view explaining the electrode structure of this invention. It is sectional drawing which showed the state which cut | disconnected the electrode of this invention perpendicularly | vertically. It is sectional drawing which showed the state which cut | disconnected the electrode of this invention perpendicularly | vertically.

DESCRIPTION OF SYMBOLS 10 Board | substrate 12 1st electrode block 14 2nd electrode block 16 Insulation unit 18 1st conducting wire 20 Groove 22 2nd conducting wire PL protective layer ECL Transparent conductive layer SL Substrate layer PI Polyimide layer CL Conductive layer

Claims (13)

A substrate, a transparent conductive layer formed on the substrate, a polyimide layer formed on the substrate, a conductive layer formed on the substrate, and a protective layer formed on the substrate Become
The transparent conductive layer is provided with a plurality of adjacent patterns,
The polyimide layer is provided with an insulating unit having a plurality of grooves, and is used for connecting so as to straddle between patterns;
The conductive layer includes a plurality of conductive wires provided corresponding to the grooves, and the conductive wires of the conductive layer are at least one of overexposure and excessive development with an optically compensated optical mask. is formed by,
A method for laying an electrode, wherein the protective layer is provided for increasing the light transmittance and protecting the substrate, the transparent conductive layer, the polyimide layer, and the conductive layer. The formation of the transparent conductive layer comprises the following steps:
Forming a conductive film on the substrate,
Apply photoresist on the substrate,
Provide an optical mask with a pattern of the corresponding pattern block, expose it on the photoresist through the optical mask,
2. The electrode laying method according to claim 1, wherein the pattern is developed, etched, and peeled to form an adjacent pattern. The polyimide layer is coated with a photoresist on the substrate,
Provide a light mask with a halftone pattern,
The light mask reflects on the photoresist using a halftone pattern, develops the halftone pattern on the photoresist, and serves to form grooves that connect across the blocks of the pattern;
3. The electrode laying method according to claim 2, wherein the electrode is laid out by baking a photoresist.   The conductive layer is provided with a conductive material on the substrate, coated with a photoresist on the substrate, coated with an optical mask for optical compensation, and the optical mask is excessively formed on the photoresist corresponding to the conductive line. 4. The method according to claim 3, further comprising the steps of: exposing the conductive wire to develop a pattern of the conductive wire and forming a pattern block adjacent to each other, wherein the conductive wire is generated by excessive development. Laying method.   5. The electrode laying method according to claim 4, wherein the protective layer is formed by applying at least one photoresist or an organic substance on a substrate and baking the photoresist and the organic substance to form a hard protective film. .   The protective layer provides a photomask having a protective area, the protective area is exposed on a photoresist or an organic substance through the photomask, and is developed into a protective area on the photoresist or the organic substance. The electrode laying method according to claim 5.   4. The electrode according to claim 3, wherein the halftone pattern of the photomask is formed such that a line width of a non-transparent area on the surface of the photomask is wider than a line width of the halftone pattern. Laying method.   4. The electrode laying method according to claim 3, wherein the halftone pattern of the photomask is formed including a step of forming a plurality of holes on the surface of the photomask on average.   The halftone pattern of the optical mask includes a step in which the groove is formed lower than the height of the insulating unit after developing the photoresist of the groove by interference and diffraction formed by the halftone pattern that is engaged during exposure. The electrode laying method according to claim 3, wherein the electrode is laid.   The conductive layer adjusts light energy required for exposure, and an optical compensation optical mask generates an interaction between the light energy and the optical mask to compensate for critical dimension loss of the conductive wire. The electrode laying method according to claim 4, wherein the electrode laying method includes a process. A substrate layer;
A transparent conductive layer provided on at least one side of the substrate layer and comprising a plurality of adjacent pattern blocks;
A polyimide layer comprising an insulating unit provided on one side of the substrate layer and the transparent conductive layer and provided with a plurality of bridge-type grooves for laterally bridging between the pattern block;
A plurality of electrical conductors provided adjacent to one side surface of the polyimide layer and corresponding to the plurality of grooves are provided, and the electrical conductors are optically compensated optical masks. structure of the electrode, wherein the exposure, and that is formed by at least one of the excessive development. The electrode structure according to claim 11 , wherein the electrode is provided with a protective layer on at least one side surface. 13. The electrode structure according to claim 12 , wherein the protective layer is made of an organic material layer, a photoresist layer, an antireflection layer (AR), an antiglare layer (AG), or a combination of the above.